Indium phosphide single crystal growth temperature control method based on sensor network

Abstract

The invention relates to the technical field of crystal growth control, in particular to an indium phosphide single crystal growth temperature control method based on a sensor network, which comprises the following steps of: importing temperature control data and atmosphere control data into a temperature-gas interaction state analysis model; analyzing the interaction state of the growth temperature and the growth atmosphere in the indium phosphide single crystal growth process; the diffraction structure data are imported into an indium phosphide single crystal structure state analysis model, and the structure state of the indium phosphide single crystal is analyzed; and according to the interaction state analysis result of the growth temperature and the growth atmosphere and the structure state analysis result of the indium phosphide single crystal, constructing an indium phosphide single crystal quality prediction model, and predicting the quality of the indium phosphide single crystal. According to the quality prediction result of the indium phosphide single crystal, the growth temperature of the indium phosphide single crystal is optimized, deviation and fluctuation in the growth process can be effectively reduced, uniform distribution of temperature and atmosphere pressure is ensured, and then the uniformity and integrity of the indium phosphide single crystal are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal growth control, and particularly to a method for controlling the growth temperature of indium phosphide single crystals based on a sensor network. Background Art

[0002] As an important III-V semiconductor material, indium phosphide single crystals are widely used in the fields of optoelectronics and microelectronics, such as high-speed communication, optoelectronic devices, infrared detectors, and high-performance integrated circuits. The control of temperature and atmosphere during the growth process has a decisive impact on the quality and performance of the final single crystal. The temperature and atmosphere uniformity during single crystal growth directly affect the defect density, doping concentration distribution, and lattice integrity of the crystal, and these factors further affect the performance and reliability of the device. Traditional methods for growing indium phosphide single crystals are difficult to comprehensively and accurately reflect the temperature and atmosphere pressure distribution in the growth zone. The non-uniformity of temperature and atmosphere not only leads to defects in single crystal growth, such as dislocations and microcracks, but also causes doping non-uniformity and lattice distortion, seriously affecting the optical and electrical properties of the crystal.

[0003] Existing methods for controlling the growth temperature of indium phosphide single crystals often only consider how to control a single temperature, while ignoring the influence of atmosphere pressure on the indium phosphide single crystal growth process and growth temperature control. During the actual growth process, changes in atmosphere pressure not only affect the growth rate, but also interact with temperature, thus having an important impact on the quality of indium phosphide single crystals. For example, the non-uniformity of atmosphere pressure leads to fluctuations in the growth rate of indium phosphide single crystals, which in turn causes crystal defects and doping non-uniformity. The change in temperature also produces different effects due to different atmosphere pressures. For example, under a high-pressure atmosphere, temperature fluctuations may be more likely to cause the accumulation of thermal stress in the crystal, resulting in dislocations and cracks. Therefore, solely relying on temperature control cannot comprehensively ensure the quality and performance of single crystals.

[0004] To solve these problems, the present application designs a method for controlling the growth temperature of indium phosphide single crystals based on a sensor network. Summary of the Invention

[0005] In order to overcome the defects and deficiencies existing in the prior art, the present invention provides a method for controlling the growth temperature of indium phosphide single crystals based on a sensor network. By analyzing the interaction state of the growth temperature and growth atmosphere during the indium phosphide single crystal growth process and the structural state of the indium phosphide single crystal, a quality prediction model for indium phosphide single crystals is constructed to predict the quality of indium phosphide single crystals, and then the growth temperature of indium phosphide single crystals is optimized. It can effectively reduce the deviation and fluctuation during the growth process, ensure the uniform distribution of temperature and atmosphere pressure, and thus improve the uniformity and integrity of indium phosphide single crystals.

[0006] To achieve the above object, the present invention adopts the following technical solutions: In a first aspect, an embodiment of the present invention provides a method for controlling the growth temperature of indium phosphide single crystals based on a sensor network, including the following steps: S1. Obtain temperature control data and atmosphere control data during the growth of indium phosphide single crystals through a sensor network, and at the same time obtain diffraction structure data of indium phosphide single crystals through an X-ray diffractometer; S2. Import the temperature control data and atmosphere control data into a temperature-gas interaction state analysis model to analyze the interaction state between the growth temperature and the growth atmosphere during the growth of indium phosphide single crystals; S3. Import the diffraction structure data into an indium phosphide single crystal structure state analysis model to analyze the structure state of indium phosphide single crystals; S4. According to the analysis results of the interaction state between the growth temperature and the growth atmosphere and the analysis results of the structure state of indium phosphide single crystals, construct a quality prediction model for indium phosphide single crystals to predict the quality of indium phosphide single crystals; S5. Optimize the growth temperature of indium phosphide single crystals according to the quality prediction results of indium phosphide single crystals.

[0007] In an alternative embodiment, step S2 includes the following specific steps: S21. Extract the temperature control data and atmosphere control data during the growth of indium phosphide single crystals; S22. Substitute the temperature control data and atmosphere control data into the temperature-gas interaction state coefficient calculation formula to calculate the temperature-gas interaction state coefficient between the growth temperature and the growth atmosphere during the growth of indium phosphide single crystals; the temperature-gas interaction state coefficient calculation formula is: ; In the formula, Ktg represents the temperature-gas interaction state coefficient between the growth temperature and the growth atmosphere during the growth of indium phosphide single crystals, V is the volume of the indium phosphide single crystal growth region, xmin and xmax respectively represent the minimum coordinate and the maximum coordinate of the growth region in the x direction, ymin and ymax respectively represent the minimum coordinate and the maximum coordinate of the growth region in the y direction, zmin and zmax respectively represent the minimum coordinate and the maximum coordinate of the growth region in the z direction, To represents the average temperature in the growth region in the temperature control data, Po represents the average atmosphere pressure in the growth region in the atmosphere control data, represents the difference between the highest temperature and the lowest temperature in the growth region in the temperature control data, represents the difference between the highest atmosphere pressure and the lowest atmosphere pressure in the growth region in the atmosphere control data, T(x, y, z) represents the temperature distribution function in the indium phosphide single crystal growth region in the temperature control data, P(x, y, z) represents the atmosphere pressure distribution function in the indium phosphide single crystal growth region in the atmosphere control data, and r is the correlation coefficient between the temperature and the atmosphere pressure.

[0008] In an alternative embodiment, the process of obtaining the temperature distribution function in the indium phosphide single crystal growth region in the temperature control data is as follows: Temperature sensors are installed at m sensor installation positions in the indium phosphide single crystal growth region to measure the temperatures at the m sensor installation positions. The temperatures at the m sensor installation positions are fitted into a continuous three-dimensional function through interpolation to obtain the final temperature distribution function T(x, y, z) in the indium phosphide single crystal growth region; the process of obtaining the atmosphere pressure distribution function in the indium phosphide single crystal growth region in the atmosphere control data is as follows: Pressure sensors are installed at m sensor installation positions in the indium phosphide single crystal growth region to measure the atmosphere pressures at the m sensor installation positions. The atmosphere pressures at the m sensor installation positions are fitted into a continuous three-dimensional function through interpolation to obtain the final atmosphere pressure distribution function P(x, y, z) in the indium phosphide single crystal growth region; The calculation formula for the correlation coefficient of the temperature and the atmosphere pressure is: ; In the formula, Tj represents the temperature at the j-th sensor installation position in the indium phosphide single crystal growth region, Pj represents the atmosphere pressure at the j-th sensor installation position in the indium phosphide single crystal growth region, m is the number of sensor installation positions, and j is any one of 1 to m.

[0009] In an alternative embodiment, step S3 includes the following specific contents: S31. Extract the diffraction structure data of the indium phosphide single crystal; S32. Substitute the diffraction structure data into the structure state coefficient calculation formula to calculate the structure state coefficient of the indium phosphide single crystal; the structure state coefficient calculation formula is: ; In the formula, JG represents the structure state coefficient of the indium phosphide single crystal, N is the number of diffraction peaks in the X-ray diffraction pattern of the indium phosphide single crystal in the diffraction structure data, Ii represents the diffraction intensity of the i-th diffraction peak in the X-ray diffraction pattern of the indium phosphide single crystal in the diffraction structure data, Imax and Imin respectively represent the maximum diffraction intensity and the minimum diffraction intensity in the X-ray diffraction pattern of the indium phosphide single crystal, represents the average value of all diffraction intensities in the X-ray diffraction pattern of the indium phosphide single crystal, and i is any one of 1 to N; S33. Take the reciprocal of the calculated structure state coefficient of the indium phosphide single crystal as the quality coefficient of the indium phosphide single crystal.

[0010] In an alternative embodiment, the construction of the indium phosphide single crystal quality prediction model in step S4 includes the following specific contents: Obtain indium phosphide single crystal analysis sample data for training an indium phosphide single crystal quality prediction model. The indium phosphide single crystal analysis sample data includes the calculated temperature-gas interaction state coefficients of the growth temperature and growth atmosphere during the growth of multiple historical indium phosphide single crystals and the corresponding quality coefficients of multiple historical indium phosphide single crystals. Divide the indium phosphide single crystal analysis sample data for training the indium phosphide single crystal quality prediction model into an indium phosphide single crystal analysis sample training set and an indium phosphide single crystal analysis sample test set. Construct a regression network model. Use the temperature-gas interaction state coefficients of the growth temperature and growth atmosphere during the growth of multiple historical indium phosphide single crystals in the indium phosphide single crystal analysis sample training set as the input of the regression network model, and use the quality coefficients of multiple historical indium phosphide single crystals in the indium phosphide single crystal analysis sample training set as the output of the regression network model. Train the regression network model to obtain an initial regression network model. Use the mean squared error algorithm to evaluate the model effect of the initial regression network model, and select the corresponding initial regression network model greater than or equal to the preset evaluation value as the indium phosphide single crystal quality prediction model.

[0011] In an alternative embodiment, step S4 further includes the following specific content: S41. Obtain the temperature control data and atmosphere control data during the growth of the current indium phosphide single crystal; S42. Substitute the temperature control data and atmosphere control data during the growth of the current indium phosphide single crystal into the temperature-gas interaction state coefficient calculation formula to calculate the temperature-gas interaction state coefficient of the growth temperature and growth atmosphere during the growth of the current indium phosphide single crystal; S43. Import the calculated temperature-gas interaction state coefficient of the growth temperature and growth atmosphere during the growth of the current indium phosphide single crystal into the indium phosphide single crystal quality prediction model, and output the predicted quality coefficient of the current indium phosphide single crystal.

[0012] In an alternative embodiment, step S5 includes the following specific content: Preset an indium phosphide single crystal quality threshold. When the predicted quality coefficient of the current indium phosphide single crystal is greater than or equal to the indium phosphide single crystal quality threshold, continue the production of the current indium phosphide single crystal; when the predicted quality coefficient of the current indium phosphide single crystal is less than the indium phosphide single crystal quality threshold, issue an early warning for optimizing the production temperature of the current indium phosphide single crystal to the operator.

[0013] In a second aspect, an electronic device provided by an embodiment of the present invention includes: a processor and a memory. Among them, a computer program that can be called by the processor is stored in the memory, and the processor executes the indium phosphide single crystal growth temperature control method based on a sensor network by calling the computer program stored in the memory.

[0014] In a third aspect, a computer-readable storage medium provided by an embodiment of the present invention stores instructions that, when run on a computer, cause the computer to execute a method for controlling the growth temperature of indium phosphide single crystals based on a sensor network.

[0015] Compared with the prior art, the present invention has the following advantages and beneficial effects: The present invention imports temperature control data and atmosphere control data into a temperature-atmosphere interaction state analysis model to analyze the interaction state between the growth temperature and the growth atmosphere during the growth process of indium phosphide single crystals; imports diffraction structure data into an indium phosphide single crystal structure state analysis model to analyze the structure state of indium phosphide single crystals; constructs an indium phosphide single crystal quality prediction model based on the analysis results of the interaction state between the growth temperature and the growth atmosphere and the analysis results of the structure state of indium phosphide single crystals to predict the quality of indium phosphide single crystals; and optimizes the growth temperature of indium phosphide single crystals according to the quality prediction results of indium phosphide single crystals. It can effectively reduce the deviation and fluctuation during the growth process, ensure the uniform distribution of temperature and atmosphere pressure, and thus improve the uniformity and integrity of indium phosphide single crystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Other features, objects, and advantages of the present invention will become more apparent by reading the following detailed description of non-limiting embodiments with reference to the accompanying drawings: Figure 1 It is a schematic overall flow chart of the method for controlling the growth temperature of indium phosphide single crystals based on a sensor network according to the present invention; Figure 2 It is a schematic construction flow chart of the indium phosphide single crystal quality prediction model in the method for controlling the growth temperature of indium phosphide single crystals based on a sensor network according to the present invention; Figure 3 It is a schematic structural diagram of an electronic device in the method for controlling the growth temperature of indium phosphide single crystals based on a sensor network according to the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0017] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific features in the embodiments of the present invention are detailed descriptions of the technical solution of the present invention, rather than limitations on the technical solution of the present invention. Without conflict, the technical features in the embodiments of the present invention and the embodiments can be combined with each other.

[0018] Embodiment 1 As Figure 1 shown, this embodiment provides a method for controlling the growth temperature of indium phosphide single crystals based on a sensor network, which specifically includes the following steps: S1. Obtain the temperature control data and atmosphere control data during the growth process of indium phosphide single crystal through the sensor network, and at the same time obtain the diffraction structure data of the indium phosphide single crystal through the X-ray diffractometer; S2. Import the temperature control data and atmosphere control data into the temperature-gas interaction state analysis model to analyze the interaction state of the growth temperature and growth atmosphere during the growth process of indium phosphide single crystal; S3. Import the diffraction structure data into the indium phosphide single crystal structure state analysis model to analyze the structure state of the indium phosphide single crystal; S4. According to the analysis results of the interaction state of the growth temperature and growth atmosphere and the analysis results of the structure state of the indium phosphide single crystal, construct an indium phosphide single crystal quality prediction model to predict the quality of the indium phosphide single crystal; S5. Optimize the growth temperature of the indium phosphide single crystal according to the quality prediction result of the indium phosphide single crystal.

[0019] In this embodiment, step S2 can comprehensively evaluate the uniformity and stability of the temperature and atmosphere pressure during the growth process of indium phosphide single crystal by using the temperature-gas interaction state coefficient calculation formula. Calculating the temperature-gas interaction state coefficient of the growth temperature and growth atmosphere during the growth process of indium phosphide single crystal can not only comprehensively consider the temperature and atmosphere pressure data at multiple positions in the growth zone, but also fit these discrete measurement values into a continuous distribution function by the interpolation method, so as to more accurately reflect the overall state in the growth zone. During the calculation process, the deviations of temperature and pressure are normalized to their respective ranges, eliminating the influence of absolute values, making the state coefficients under different growth conditions comparable. When the calculated temperature-gas interaction state coefficient is smaller, it indicates that the temperature and atmosphere pressure distribution in the growth zone is more uniform and the interaction is more stable, so the quality of the grown single crystal is higher; this normalization process can better reflect the relative changes and fluctuations of temperature and atmosphere pressure, provide clear physical meanings, and help researchers deeply understand the temperature and atmosphere interaction during the growth process. In addition, by integrating the temperature and atmosphere pressure fluctuation conditions of the entire growth region into one, the stability and uniformity of the growth process can be more comprehensively evaluated, providing a scientific basis for optimizing the growth conditions. It includes the following specific steps: S21. Extract the temperature control data and atmosphere control data during the growth process of indium phosphide single crystal; S22. Substitute the temperature control data and atmosphere control data into the temperature-gas interaction state coefficient calculation formula to calculate the temperature-gas interaction state coefficient of the growth temperature and growth atmosphere during the growth process of indium phosphide single crystal; the temperature-gas interaction state coefficient calculation formula is: ; In the formula, Ktg represents the temperature-gas interaction state coefficient of the growth temperature and growth atmosphere during the growth of indium phosphide single crystal, V is the volume of the indium phosphide single crystal growth region, xmin and xmax respectively represent the minimum coordinate and maximum coordinate of the growth region in the x direction, ymin and ymax respectively represent the minimum coordinate and maximum coordinate of the growth region in the y direction, zmin and zmax respectively represent the minimum coordinate and maximum coordinate of the growth region in the z direction, To represents the average temperature in the growth region in the temperature control data, and Po represents the average atmosphere pressure in the growth region in the atmosphere control data. represents the difference between the highest temperature and the lowest temperature in the growth region in the temperature control data. represents the difference between the highest atmosphere pressure and the lowest atmosphere pressure in the growth region in the atmosphere control data. T(x, y, z) represents the temperature distribution function in the indium phosphide single crystal growth region in the temperature control data, P(x, y, z) represents the atmosphere pressure distribution function in the indium phosphide single crystal growth region in the atmosphere control data, and r is the correlation coefficient between temperature and atmosphere pressure.

[0020] In this embodiment, the process of obtaining the temperature distribution function in the indium phosphide single crystal growth region in the temperature control data is as follows: Temperature sensors are installed at m sensor installation positions in the indium phosphide single crystal growth region to measure the temperatures at the m sensor installation positions, and the temperatures at the m sensor installation positions are fitted into a continuous three-dimensional function through interpolation method to obtain the final temperature distribution function T(x, y, z) in the indium phosphide single crystal growth region; the process of obtaining the atmosphere pressure distribution function in the indium phosphide single crystal growth region in the atmosphere control data is as follows: Pressure sensors are installed at m sensor installation positions in the indium phosphide single crystal growth region to measure the atmosphere pressures at the m sensor installation positions, and the atmosphere pressures at the m sensor installation positions are fitted into a continuous three-dimensional function through interpolation method to obtain the final atmosphere pressure distribution function P(x, y, z) in the indium phosphide single crystal growth region. The calculation formula for the correlation coefficient between temperature and atmosphere pressure is: ; In the formula, Tj represents the temperature at the jth sensor installation position in the indium phosphide single crystal growth region, Pj represents the atmosphere pressure at the jth sensor installation position in the indium phosphide single crystal growth region, m is the number of sensor installation positions, and j is any one of 1 to m.

[0021] In this embodiment, taking the temperature distribution function as an example, the specific steps of fitting the temperatures at m sensor installation positions into a continuous three-dimensional function through interpolation method to obtain the final temperature distribution function T(x, y, z) in the indium phosphide single crystal growth region are as follows: A1. Record the position coordinates (xj, yj, zj) of each sensor and the measured temperature Tj; A2. Construct the radial basis function matrix , construct the temperature vector ; A3. Set up the linear equation A*W=T, and perform step-by-step elimination and solution through Gaussian elimination to obtain the weight coefficient matrix ; A4. Define a set of position coordinates within the indium phosphide single crystal growth area to be interpolated as interpolation points; for each interpolation point (x, y, z), calculate its temperature value using the interpolation formula , and calculate the Euclidean distance dj between each interpolation point (x, y, z) and the position coordinates (xj, yj, zj) of each sensor; A5. According to step A5, initialize the interpolation temperature T(x, y, z)=0; traverse the coordinates and temperatures at the positions of each sensor, calculate the Euclidean distance dj between each interpolation point and the position coordinates (xj, yj, zj) of each sensor, and calculate the radial basis function value corresponding to each Euclidean distance using the radial basis function; A6. Multiply the temperature at the position of each sensor by the corresponding radial basis function value and the corresponding weight coefficient, and accumulate it into ; A7. Repeat steps A5 - A6 until all interpolation points are traversed, and finally obtain the temperature distribution function of the entire indium phosphide single crystal growth area.

[0022] In this embodiment, the atmosphere pressure distribution function P(x, y, z) in the indium phosphide single crystal growth area can be obtained in the same way as the above method, so it will not be elaborated here.

[0023] In this embodiment, the temperature and atmosphere pressure jointly determine the growth rate and quality of the indium phosphide single crystal during the growth process. The accuracy of temperature control directly affects the growth rate and growth direction of the crystal. The change in atmosphere pressure will affect the transport rate and partial pressure of the reactants, and thus change the chemical reaction kinetics at the growth interface.

[0024] Specifically: High temperature can accelerate the diffusion of reactants and the chemical reaction rate, but low pressure may lead to insufficient partial pressure of reactants, thereby reducing the growth rate and increasing the risk of incomplete reaction.

[0025] High temperature and high pressure conditions can increase the partial pressure of reactants and accelerate the growth rate, but excessive pressure may lead to the accumulation of internal stress in the crystal, forming dislocations and cracks.

[0026] Under low temperature and low pressure conditions, the growth rate is slow, and it is easy to control the growth direction of the crystal, but it may lead to incomplete reaction and increase the defect density.

[0027] Low-temperature and high-pressure conditions can ensure the partial pressure of reactants, but too low a temperature will reduce the reaction rate and prolong the growth time.

[0028] The inhomogeneity of temperature and atmosphere pressure is one of the important reasons for crystal defects. The temperature gradient will affect the thermal stress distribution inside the crystal, and the inhomogeneity of atmosphere pressure will affect the transport and distribution of reactants, thus affecting the growth quality of the crystal. Too large a temperature gradient in the indium phosphide single crystal growth area is likely to cause the concentration of thermal stress, forming dislocations and microcracks; the inhomogeneity of atmosphere pressure will lead to uneven distribution of reactants at the growth interface, thus causing crystal defects. Therefore, in order to achieve the growth of high-quality indium phosphide single crystals, it is necessary to optimize the temperature and atmosphere pressure synergistically.

[0029] In this embodiment, step S3 can better reflect the relative consistency of the diffraction peak intensity by normalizing the deviation of each diffraction peak intensity to the intensity range, without being affected by the absolute intensity value; at the same time, the structural state coefficient comprehensively considers the intensity deviations of all diffraction peaks, not just the maximum and minimum values, so it can more comprehensively evaluate the structural state of the crystal, thereby evaluating the structural consistency and integrity of the indium phosphide single crystal.

[0030] It includes the following specific contents: S31. Extract the diffraction structure data of the indium phosphide single crystal; S32. Substitute the diffraction structure data into the calculation formula of the structural state coefficient to calculate the structural state coefficient of the indium phosphide single crystal; the calculation formula of the structural state coefficient is: ; In the formula, JG represents the structural state coefficient of the indium phosphide single crystal, N is the number of diffraction peaks in the X-ray diffraction pattern of the indium phosphide single crystal in the diffraction structure data, Ii represents the diffraction intensity of the i-th diffraction peak in the X-ray diffraction pattern of the indium phosphide single crystal in the diffraction structure data, Imax and Imin respectively represent the maximum diffraction intensity and the minimum diffraction intensity in the X-ray diffraction pattern of the indium phosphide single crystal, represents the average value of all diffraction intensities in the X-ray diffraction pattern of the indium phosphide single crystal, and i is any one of 1 to N; S33. Take the reciprocal of the calculated structural state coefficient of the indium phosphide single crystal as the quality coefficient of the indium phosphide single crystal.

[0031] In this embodiment, the construction of the indium phosphide single crystal quality prediction model in step S4 includes the following specific contents: Such as Figure 2As shown, obtain the indium phosphide single crystal analysis sample data for training the indium phosphide single crystal quality prediction model. The indium phosphide single crystal analysis sample data includes the calculated temperature-gas interaction state coefficients of the growth temperature and growth atmosphere during the growth of multiple historical indium phosphide single crystals and the corresponding quality coefficients of multiple historical indium phosphide single crystals. Divide the indium phosphide single crystal analysis sample data for training the indium phosphide single crystal quality prediction model into an indium phosphide single crystal analysis sample training set and an indium phosphide single crystal analysis sample test set. Construct a regression network model. Use the temperature-gas interaction state coefficients of the growth temperature and growth atmosphere during the growth of multiple historical indium phosphide single crystals in the indium phosphide single crystal analysis sample training set as the input of the regression network model, and use the quality coefficients of multiple historical indium phosphide single crystals in the indium phosphide single crystal analysis sample training set as the output of the regression network model. Train the regression network model to obtain an initial regression network model. Use the mean square error algorithm to evaluate the model effect of the initial regression network model, and select the corresponding initial regression network model greater than or equal to the preset evaluation value as the indium phosphide single crystal quality prediction model.

[0032] In this embodiment, step S4 further includes the following specific contents: S41. Obtain the temperature control data and atmosphere control data during the growth of the current indium phosphide single crystal; S42. Substitute the temperature control data and atmosphere control data during the growth of the current indium phosphide single crystal into the temperature-gas interaction state coefficient calculation formula to calculate the temperature-gas interaction state coefficient of the growth temperature and growth atmosphere during the growth of the current indium phosphide single crystal; S43. Import the calculated temperature-gas interaction state coefficient of the growth temperature and growth atmosphere during the growth of the current indium phosphide single crystal into the indium phosphide single crystal quality prediction model, and output the predicted quality coefficient of the current indium phosphide single crystal.

[0033] In this embodiment, step S5 includes the following specific contents: Preset the quality threshold of indium phosphide single crystal. When the predicted quality coefficient of the current indium phosphide single crystal is greater than or equal to the quality threshold of indium phosphide single crystal, continue the production of the current indium phosphide single crystal; when the predicted quality coefficient of the current indium phosphide single crystal is less than the quality threshold of indium phosphide single crystal, issue an early warning for the optimization of the production temperature of the current indium phosphide single crystal to the operator. It should be noted that the value-taking method of the quality threshold of indium phosphide single crystal is as follows: Obtain 1000 groups of temperature control data and atmosphere control data during the growth of indium phosphide single crystal, import the 1000 groups of temperature control data and atmosphere control data during the growth of indium phosphide single crystal into the calculation formula of the temperature-gas interaction state coefficient to calculate the temperature-gas interaction state coefficients of the growth temperature and growth atmosphere during the growth of 1000 groups of indium phosphide single crystal, and input the temperature-gas interaction state coefficients of the growth temperature and growth atmosphere during the growth of 1000 groups of indium phosphide single crystal into the quality prediction model of indium phosphide single crystal to predict the quality coefficients of 1000 groups of indium phosphide single crystal; Obtain 1000 groups of quality judgment results of indium phosphide single crystal, import the quality coefficients of indium phosphide single crystal and the quality judgment results of indium phosphide single crystal into the fitting software, and output the value of the quality threshold of indium phosphide single crystal that meets the highest accuracy rate of quality judgment of indium phosphide single crystal.

[0034] Embodiment 2 As Figure 3 shown, an electronic device according to an embodiment of the present invention includes: a processor and a memory. Among them, a computer program that can be called by the processor is stored in the memory, and the processor executes the temperature control method for growing indium phosphide single crystal based on a sensor network by calling the computer program stored in the memory. It should be noted that: All computer programs of the temperature control method for growing indium phosphide single crystal based on a sensor network are implemented using the C language.

[0035] Embodiment 3 This embodiment proposes a computer-readable storage medium, on which a rewritable computer program is stored; When the computer program runs on a computer device, it causes the computer device to execute the above-mentioned temperature control method for growing indium phosphide single crystal based on a sensor network.

[0036] Each embodiment in the present invention is described in a progressive manner. The same or similar parts among the embodiments can be referred to each other, and the key points of each embodiment are the differences from other embodiments. In particular, for the embodiments of the Internet of Things device and the medium, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiments.

[0037] The system, medium, and method provided by the embodiments of the present invention correspond one by one. Therefore, the system and the medium also have beneficial technical effects similar to those of their corresponding methods. Since the beneficial technical effects of the method have been described in detail above, the beneficial technical effects of the system and the medium will not be elaborated here.

[0038] Those skilled in the art should understand that the embodiments of the present invention can be provided as a method, a system, or a computer program product. Therefore, the present invention can take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present invention can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0039] The present invention is described with reference to the flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to the embodiments of the present invention. It should be understood that each flow and / or block in the flowchart and / or block diagram, and the combination of flows and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, such that the instructions executed by the processor of the computer or other programmable data processing devices generate means for implementing the functions specified in Figure 1 one or more of the flows Figure 1 or blocks or the combination of blocks.

[0040] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, such that the instructions stored in the computer-readable memory generate a manufactured article including instruction means that implement the functions specified in Figure 1 one or more of the flows Figure 1 or blocks or the combination of blocks.

[0041] In a typical configuration, a computing device includes one or more processors (CPUs), an input / output interface, a network interface, and memory.

[0042] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM), and / or non-volatile memory such as read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0043] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0044] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0045] The above are only embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims

1. A method for controlling the growth temperature of an indium phosphide single crystal based on a sensor network, characterized in that: The steps include: S1. Acquire temperature control data and atmosphere control data during the growth of indium phosphide single crystals through a sensor network, and acquire diffraction structure data of the indium phosphide single crystals through an X-ray diffractometer; S2. Importing the temperature control data and the atmosphere control data into the temperature-gas interaction state analysis model to analyze the interaction state between the growth temperature and the growth atmosphere during the growth of the indium phosphide single crystal; S3, importing the diffraction structure data into the indium phosphide single crystal structure state analysis model to analyze the structure state of the indium phosphide single crystal; S4. According to the analysis results of the interaction state of the growth temperature and the growth atmosphere and the structural state analysis results of the indium phosphide single crystal, a quality prediction model of the indium phosphide single crystal is constructed to predict the quality of the indium phosphide single crystal; S5. Optimize the growth temperature of the InP single crystal according to the quality prediction result of the InP single crystal.

2. The sensor network-based indium phosphide single crystal growth temperature control method according to claim 1, characterized in that: The step S2 comprises the following specific steps: S21, extracting temperature control data and atmosphere control data during the growth of indium phosphide single crystal; S22, substituting the temperature control data and the atmosphere control data into the temperature-gas interaction state coefficient calculation formula to calculate the growth temperature and the temperature-gas interaction state coefficient of the growth atmosphere during the growth of the indium phosphide single crystal; the temperature-gas interaction state coefficient calculation formula is: ； Wherein, Ktg represents the temperature-gas interaction state coefficient of the growth temperature and the growth atmosphere during the growth of the InP single crystal, V is the volume of the growth zone of the InP single crystal, xmin and xmax represent the minimum coordinate and maximum coordinate of the growth zone in the x direction, ymin and ymax represent the minimum coordinate and maximum coordinate of the growth zone in the y direction, zmin and zmax represent the minimum coordinate and maximum coordinate of the growth zone in the z direction, To represents the average temperature in the growth zone in the temperature control data, Po represents the average atmosphere pressure in the growth zone in the atmosphere control data, It represents the difference between the highest temperature and the lowest temperature in the growth zone in the temperature control data. It represents the difference between the highest atmosphere pressure and the lowest atmosphere pressure in the growth zone in the atmosphere control data, T(x, y, z) represents the temperature distribution function in the growth zone of the InP single crystal in the temperature control data, P(x, y, z) represents the atmosphere pressure distribution function in the growth zone of the InP single crystal in the atmosphere control data, and r is the correlation coefficient between temperature and atmosphere pressure.

3. The sensor network-based indium phosphide single crystal growth temperature control method according to claim 2, characterized in that: The process of acquiring the temperature distribution function in the indium phosphide single crystal growth zone in the temperature control data is as follows: installing temperature sensors at m sensor installation positions in the indium phosphide single crystal growth zone to measure the temperatures of the m sensor installation positions, fitting the temperatures of the m sensor installation positions into a continuous three-dimensional function by interpolation, and obtaining the final temperature distribution function T(x, y, z) in the indium phosphide single crystal growth zone; the process of acquiring the atmosphere pressure distribution function in the indium phosphide single crystal growth zone in the atmosphere control data is as follows: installing pressure sensors at m sensor installation positions in the indium phosphide single crystal growth zone to measure the atmosphere pressures of the m sensor installation positions, fitting the atmosphere pressures of the m sensor installation positions into a continuous three-dimensional function by interpolation, and obtaining the final atmosphere pressure distribution function P(x, y, z) in the indium phosphide single crystal growth zone; The calculation formula of the correlation coefficient between the temperature and the atmosphere pressure is: ； Wherein, Tj represents the temperature of the j-th sensor installation position in the indium phosphide single crystal growth region, Pj represents the atmosphere pressure of the j-th sensor installation position in the indium phosphide single crystal growth region, m is the number of sensor installation positions, and j is any one of 1 to m.

4. The sensor network-based indium phosphide single crystal growth temperature control method according to claim 3, characterized in that: The step S3 includes the following specific contents: S31, extracting diffraction structure data of an indium phosphide single crystal; S32, substituting the diffraction structure data into a structural state coefficient calculation formula to calculate the structural state coefficient of the indium phosphide single crystal; the structural state coefficient calculation formula is: ； Wherein, JG represents the structural state coefficient of the InP single crystal, N is the number of diffraction peaks in the X-ray diffraction spectrum of the InP single crystal in the diffraction structure data, Ii represents the diffraction intensity of the i-th diffraction peak in the X-ray diffraction spectrum of the InP single crystal in the diffraction structure data, Imax and Imin represent the maximum diffraction intensity and the minimum diffraction intensity in the X-ray diffraction spectrum of the InP single crystal, respectively. represents the average value of all diffraction intensities in the X-ray diffraction spectrum of an InP single crystal, where i is any one of 1 to N; S33. Taking the calculated inverse of the structural state coefficient of the indium phosphide single crystal as the quality coefficient of the indium phosphide single crystal.

5. The sensor network-based indium phosphide single crystal growth temperature control method according to claim 4, characterized in that: The step S4 of constructing the indium phosphide single crystal quality prediction model includes the following specific contents: Indium phosphide single crystal analysis sample data for training an Indium phosphide single crystal quality prediction model is obtained, wherein the Indium phosphide single crystal analysis sample data includes a calculated temperature-gas interaction state coefficient of a growth temperature and a growth atmosphere during a plurality of historical Indium phosphide single crystal growth processes and a corresponding quality coefficient of a plurality of historical Indium phosphide single crystals, the Indium phosphide single crystal analysis sample data for training an Indium phosphide single crystal quality prediction model is divided into an Indium phosphide single crystal analysis sample training set and an Indium phosphide single crystal analysis sample test set, a regression network model is constructed, the temperature-gas interaction state coefficient of a growth temperature and a growth atmosphere during a plurality of historical Indium phosphide single crystal growth processes in the Indium phosphide single crystal analysis sample training set is used as an input of the regression network model, the quality coefficient of a plurality of historical Indium phosphide single crystals in the Indium phosphide single crystal analysis sample training set is used as an output of the regression network model, the regression network model is trained to obtain an initial regression network model, and an average error algorithm is used to evaluate the model effect of the initial regression network model, and a corresponding initial regression network model having a value greater than or equal to a preset evaluation value is selected as the Indium phosphide single crystal quality prediction model.

6. The sensor network-based indium phosphide single crystal growth temperature control method according to claim 5, characterized in that: The step S4 also includes the following specific contents: S41, obtaining temperature control data and atmosphere control data during the current indium phosphide single crystal growth process; S42, substituting the temperature control data and atmosphere control data of the current indium phosphide single crystal growth process into the temperature-gas interaction state coefficient calculation formula to calculate the growth temperature and the temperature-gas interaction state coefficient of the growth atmosphere during the current indium phosphide single crystal growth process; S43, importing the calculated temperature-gas interaction state coefficient of the current indium phosphide single crystal growth process and the growth atmosphere into the indium phosphide single crystal quality prediction model, and outputting the predicted quality coefficient of the current indium phosphide single crystal.

7. The sensor network-based indium phosphide single crystal growth temperature control method according to claim 6, characterized in that: The step S5 includes the following specific contents: A quality threshold of the InP single crystal is preset. When the predicted quality coefficient of the current InP single crystal is greater than or equal to the quality threshold of the InP single crystal, the production of the current InP single crystal continues. When the predicted quality coefficient of the current InP single crystal is less than the quality threshold of the InP single crystal, an early warning for optimizing the production temperature of the current InP single crystal is issued to the operator.

8. An electronic device comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor; characterized in that the processor executes the indium phosphide single crystal growth temperature control method based on a sensor network as described in any one of claims 1 to 7 by calling the computer program stored in the memory.

9. A computer-readable storage medium, characterized in that: Instructions are stored, and when the instructions are executed on a computer, the computer is caused to execute the indium phosphide single crystal growth temperature control method based on a sensor network as described in any one of claims 1 to 7.

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