Substrate processing apparatus

Abstract

A substrate processing apparatus according to an embodiment of the present invention is characterized by comprising: a chamber having a processing space therein for substrate processing; a substrate support unit disposed inside the chamber; a microwave unit for supplying microwaves to the processing space; and a polarizer which is provided on the side wall of the chamber and which reflects the first polarized microwaves and transmits the second polarized microwaves. According to the substrate processing device, the problem that the temperature on the surface of the substrate is not uniform due to standing waves of microwaves generated in the processing space can be solved.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that supplies microwaves to the inside of a chamber in which a substrate is disposed and performs a predetermined process on the substrate. Background Art

[0002] A process for processing a substrate such as a semiconductor wafer is generally performed in a state where the temperature of the substrate is adjusted to a predetermined temperature. To raise the temperature of the substrate to the predetermined temperature, a heating module is used. As the heating module, there are a resistance heater built in a substrate support device, a lamp heater that irradiates light to the substrate, and the like.

[0003] In addition to the resistance heating method and the lamp heating method, a technique of heating a substrate using microwaves has been proposed. Heat treatment by microwaves is excellent in usability due to faster heating and cooling capabilities than the resistance heating method or the lamp heating method.

[0004] On the other hand, microwaves introduced into the inside of a chamber in which a substrate is disposed easily form a standing wave in the chamber, and due to this, a distribution may occur in the intensity of an electromagnetic field depending on the position of the processing space inside the chamber. This causes hot spots and cold spots to be formed on the substrate surface, and thus there is a problem of non-uniform temperature on the substrate surface.

[0005] There is a known technique (Patent Document 1) of spraying cooling gas controlled according to the region of a substrate in a substrate heating apparatus using microwaves in order to improve the temperature uniformity of the substrate, but there are problems that not only the device structure and the control method are complicated but also it is difficult to achieve high substrate temperature uniformity.

[0006] (Patent Document 1) KR10-1747498B1 Summary of the Invention

[0007] An object of the present invention is to provide a substrate processing apparatus that can improve the temperature uniformity on the substrate surface in a substrate processing apparatus that processes a substrate by microwaves.

[0008] A substrate processing apparatus according to an embodiment of the present invention is characterized by including: a chamber that provides a processing space for substrate processing inside; a substrate support unit disposed inside the chamber; a microwave unit that supplies microwaves to the processing space; and a polarizer provided on a side wall of the chamber that reflects microwaves of a first polarization and transmits microwaves of a second polarization.

[0009] In an embodiment of the present invention, it may be that the polarizer includes: a transmission layer disposed on the sidewall of the chamber such that the first surface contacts the sidewall of the chamber and the second surface opposite to the first surface is exposed to the processing space; and a plurality of grating patterns disposed on the second surface of the transmission layer exposed to the processing space.

[0010] It may be that the transmission layer is provided by a material that transmits microwaves supplied from the microwave unit.

[0011] It may be that the thickness (t) of the transmission layer is determined by the wavelength (λ) of the microwaves supplied from the microwave unit, the refractive index (n) of the transmission layer, and the following relational expression.

[0012]

[0013] In an embodiment of the present invention, it may be that the plurality of grating patterns are arranged in a line shape extending in a first direction and spaced apart from each other by a predetermined interval, and the predetermined interval is less than the wavelength of the microwaves supplied from the microwave unit. Among them, it may be that the first direction is a vertical direction identical to the height direction of the chamber or a horizontal direction identical to the circumferential direction of the chamber.

[0014] In addition, it may be that the vibration direction of the first-polarized microwaves is perpendicular to the first direction, and the vibration direction of the second-polarized microwaves is horizontal to the first direction.

[0015] In an embodiment of the present invention, it may be that among the microwaves supplied from the microwave unit to the processing space, the first-polarized microwaves are reflected by the polarizer, the second-polarized microwaves are transmitted through the polarizer, reflected by the sidewall of the chamber, and then transmitted through the polarizer again and supplied to the processing space, and a standing wave synthesized by the first-polarized microwaves reflected by the polarizer and the second-polarized microwaves reflected by the sidewall of the chamber is formed in the processing space. At this time, it may be that there is a phase difference between the first-polarized microwaves reflected by the polarizer and the second-polarized microwaves reflected by the sidewall of the chamber, and it may be that the phase difference is 1 / 4 or 3 / 4 of the wavelength (λ) of the microwaves.

[0016] In an embodiment of the present invention, it may be that the polarizer is disposed across the entire inner circumferential surface of the sidewall of the chamber, or is only disposed in a first region of the inner circumferential surface of the sidewall of the chamber and not in a second region. It may be that when the polarizer is only disposed in the first region of the inner circumferential surface of the sidewall of the chamber, the areas of the first region where the polarizer is disposed and the second region where the polarizer is not disposed are the same.

[0017] A substrate processing apparatus according to another embodiment of the present invention is characterized in that it includes: a chamber that provides a processing space for substrate processing inside; a substrate support unit disposed inside the chamber; a microwave unit for supplying microwaves to the processing space; a showerhead disposed between the processing space and the microwave unit; a high-frequency power supply connected to the showerhead or the substrate support unit to supply high-frequency power for generating plasma in the processing space; a polarizer disposed on the side wall of the chamber, which reflects microwaves with a first polarization and transmits microwaves with a second polarization; and a control unit.

[0018] It may be that the showerhead is made of a microwave-transmissive material that allows the microwaves supplied from the microwave unit to pass through, and includes an upper electrode that is a transparent electrode.

[0019] It may be that the control unit controls the substrate processing apparatus to perform a substrate processing process, and the substrate processing process includes: a plasma processing process of controlling the high-frequency power supply to generate plasma in the processing space and performing plasma processing on the substrate; and a heat treatment process of controlling the microwave unit to heat-treat the substrate through the microwaves supplied to the processing space. Among them, it may be that the substrate processing process is an atomic layer etching (ALE; Atomic Layer Etching) process.

[0020] In addition, it may be that the control unit pulse-controls the high-frequency power supply in the plasma processing process.

[0021] According to the present invention, by means of a polarizer disposed on the inner wall of the chamber, a composite wave of microwaves with a first polarization and microwaves with a second polarization having a phase difference from each other is generated inside the chamber, thereby having the effect of improving the temperature uniformity on the substrate surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

[0023] Figure 2 is a diagram for explaining the structure of a polarizer according to an embodiment of the present invention, Figure 2 where (a) is a plan view of the polarizer observed from the processing space direction, Figure 2 and (b) is Figure 1 a cross-sectional view taken along line A-A of

[0024] Figure 3 is a schematic diagram for explaining the temperature distribution in the case where no polarizer is provided.

[0025] Figure 4 is a schematic diagram for explaining the effect of a polarizer according to an embodiment of the present invention.

[0026] Figure 5 and Figure 6 is a schematic cross-sectional view of a chamber observed from above for explaining a configuration example of a plurality of grating patterns.

[0027] Figure 7 is a plan view of a polarizer observed from the processing space direction according to another embodiment.

[0028] Figure 8 is a cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

[0029] (Description of reference numerals)

[0030] 10: Substrate processing apparatus

[0031] 100: Chamber

[0032] 200: Substrate support unit

[0033] 300: Gas supply unit

[0034] 400: Microwave unit

[0035] 500: Polarizer

[0036] 510: Transmission layer

[0037] 520: Grating pattern

[0038] 600: Control unit Detailed description of the embodiments

[0039] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings so that those of ordinary skill in the technical field to which the present invention pertains can easily implement it. However, the present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0040] In order to clearly illustrate the present invention, parts irrelevant to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

[0041] In addition, in multiple embodiments, for components having the same structure, the same reference numerals are used to describe only the representative embodiments, and only the structures different from the representative embodiments are described in the remaining other embodiments.

[0042] Throughout the specification, when it is stated that a certain part "includes" a certain component, unless there is a particularly contrary description, it means that other components may also be included rather than excluding other components.

[0043] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Terms such as those defined in commonly used dictionaries shall be interpreted as having a meaning consistent with the meaning in the context of the relevant art, and shall not be construed in an idealized or overly formal sense unless explicitly defined in this application.

[0044] Figure 1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

[0045] Referring to Figure 1 , a substrate processing apparatus 10 according to an embodiment of the present invention may include a chamber 100, a substrate support unit 200, a gas supply unit 300, a microwave unit 400, a polarizer 500, and a control unit 600.

[0046] The chamber 100 provides a processing space s for performing a substrate processing process. The chamber 100 may include a chamber body 110 and a chamber cover 120. The chamber body 110 may include a chamber sidewall 111 and a chamber bottom surface 112, and is formed of a metal such as aluminum. The substrate processing process may be a heat treatment process for heating the substrate W to a predetermined temperature. The substrate processing process may be performed in a reduced-pressure environment. To this end, an exhaust port 102 may be formed in the chamber 100. The exhaust port 102 may be formed in the chamber bottom surface 112. The exhaust port 102 is connected to a vacuum pump P through an exhaust line 104 and an exhaust valve 103. The processing space s inside the chamber 100 can be adjusted to a predetermined pressure by operating the vacuum pump P and adjusting the exhaust valve 103. The substrate processing process may also be performed at atmospheric pressure. In this case, the vacuum pump P may be omitted.

[0047] An opening 106 may be formed in the chamber sidewall 111. The opening 106 functions as a passage for the substrate W to enter and exit the interior. A door 108 is provided at the opening 106. The door 108 has a function of opening and closing the opening 106 of the chamber 100, so that the processing space s of the chamber 100 can be hermetically sealed in a closed state, and the substrate W can be transported from the transfer space outside the chamber 100 to the processing space s or from the processing space s to the transfer space outside the chamber 100 in an open state. The door 108 may be a gate valve.

[0048] A substrate support unit 200 for supporting the substrate W is provided inside the chamber 100. The substrate support unit 200 may include an electrostatic chuck 220 for adsorbing and fixing the substrate W and a base plate 210 for supporting the electrostatic chuck 220. The electrostatic chuck 220 and the base plate 210 may be adhered through a bonding layer 230, and the bonding layer may be formed of silicone or the like.

[0049] The electrostatic chuck 220 can be formed of a dielectric disk such as alumina, and a chuck electrode 222 for generating an electrostatic force can be provided inside. When a voltage is applied to the chuck electrode 222 through a power supply (not shown), an electrostatic force is generated and the substrate W is adsorbed and fixed to the electrostatic chuck 220. Optionally, a heater 224 for adjusting the temperature of the substrate W can be provided in the electrostatic chuck 220.

[0050] The base plate 210 can be located below the electrostatic chuck 220 and is formed of a metal material such as aluminum. The base plate 210 can form a refrigerant flow path 212 inside for the cooling fluid to flow through, and functions as a cooling member for cooling the substrate W. The refrigerant flow path 212 can be provided as a circulation path for the cooling fluid to circulate.

[0051] In addition, a heat conductive gas flow path 214 can be formed in the substrate support unit 200 to supply a heat conductive gas to the back surface of the substrate W from a heat conductive gas supply source 216. The heat conductive gas can facilitate heat conduction between the substrate W and the base plate 210 and promote cooling of the substrate W. Helium (He) can be used as the heat conductive gas.

[0052] Optionally, the substrate support unit 200 can include a ring member 240 surrounding the electrostatic chuck 220. A step can be formed on the upper part of the ring member 240 to support the outer peripheral surface of the substrate W.

[0053] When the substrate processing apparatus 10 is an apparatus for performing a process of heat-treating the substrate W, the electrostatic chuck 220 may not be included in the substrate support unit 200. That is, in the present invention, the substrate support unit 200 is a structure configured in the processing space s to support the substrate W and should be understood broadly.

[0054] The gas supply unit 300 supplies gases required for processing the substrate W and the like to the chamber 100. The gas supply unit 300 can include a gas supply source 310, a gas supply line 312, and a gas nozzle 318. The gas supply line 312 can connect the gas supply source 310 and the gas nozzle 318. A gas supply valve 314 for opening and closing its passage or adjusting the flow rate of the fluid flowing through its passage can be provided in the gas supply line 312.

[0055] In Figure 1 only one gas supply source 310, one gas supply line 312, and one gas supply valve 314 are shown respectively, but the gas supply source 310 of the present invention can include a plurality of gas supply sources and a plurality of gas supply valves capable of independently controlling the supply of each gas so as to supply a plurality of gases to the chamber 100. The plurality of gases can include processing gases for substrate processing processes, for example, heat treatment gases for constructing a heat treatment atmosphere, and can include inert gases for purification, etc.

[0056] A microwave unit 400 is disposed above the chamber 100. The microwave unit 400 may include a magnetron 410 that generates microwaves, a waveguide 420 that transmits the microwaves generated by the magnetron 410, a coaxial converter 430 that converts the mode of the microwaves, and a wire component 440 that introduces the microwaves into the processing space s inside the chamber 100.

[0057] The magnetron 410 can be one that is capable of generating microwaves of various frequencies. The microwaves generated by the magnetron 410 can be selected for the best frequency according to the processing of the substrate W. For example, for heat-treating the substrate W, microwaves having a frequency of 2.45 GHz to 5.8 GHz can be provided.

[0058] The waveguide 420 can have a tubular cross-section provided as a polygon or a circle. The inner surface of the waveguide 420 is provided by a conductor. As an example, the inner surface of the waveguide can be provided by gold (Au) or silver (Ag). The waveguide 420 provides a path for transmitting the microwaves generated by the magnetron 410.

[0059] The coaxial converter 430 is located inside the waveguide 420. The upper end of the coaxial converter 430 is fixed to the inner surface of the waveguide 420. The coaxial converter 430 can be provided in a conical shape with a smaller cross-sectional area at the lower end than at the upper end. The microwaves transmitted through the internal space of the waveguide 420 are converted in mode in the coaxial converter 430 and then propagate in the downward direction. As an example, the microwaves can be converted from the transverse electric mode (TE mode) to the transverse electromagnetic mode (TEM mode).

[0060] The wire component 440 transmits the microwaves whose mode has been converted in the coaxial converter 430 to the processing space s inside the chamber 100. The wire component 440 may include an outer conductor 442, an inner conductor 444, and a wire 446. The outer conductor 442 is disposed between the waveguide 420 and the chamber cover 120.

[0061] The inner conductor 444 is provided inside the outer conductor 442. The inner conductor 444 is provided as a columnar rod, and the outer peripheral surface of the inner conductor 444 is spaced from the inner surface of the outer conductor 442.

[0062] The upper end of the inner conductor 444 is connected to the lower end portion of the coaxial converter 430. The lower end of the inner conductor 444 may penetrate the chamber cover 120 and be connected to the center of the wire 446. The inner conductor 444 is vertically disposed above the wire 446.

[0063] The wire 446 is provided in a disk shape. The wire 446 can be provided as a thin conductive disk. For example, the wire 446 can be a metal disk with a thickness of several mm. A plurality of slots 448 for microwave radiation are formed in the wire 446. The configuration of the slots 448 is not particularly limited, and for example, they can be configured in a concentric circle shape, a vortex shape, or a radial shape, or they can be evenly distributed on the front of the wire 446. The wire 446 can be a wire of a RLSA (Radial Line Slot Antenna) structure.

[0064] A transmission window 450 is disposed below the electric wire 446. That is, the electric wire 446 can be disposed between the chamber cover 120 and the transmission window 450 and supported by the transmission window 450. The transmission window 450 can be formed of a material that can transmit microwaves, for example, can be formed of a quartz material. The transmission window 450 can be disposed between the processing space s inside the chamber 100 and the electric wire 446 in a manner supported by a support platform 112 formed to protrude from the chamber sidewall 111 toward the processing space s.

[0065] A polarizer 500 is disposed on the inner wall of the chamber 100. The polarizer 500 is disposed on at least a portion of the inner wall of the chamber 100. The polarizer 500 can be disposed on the chamber sidewall 111 or on the area below the transmission window 450. The polarizer 500 can be disposed as follows: Figure 1 As shown, it is only provided at the lower part of the support platform 112, but it is not limited to this.

[0066] The control unit 600 may control the overall operation of the substrate processing apparatus 10. For example, the control unit 600 may control the operation of the gas supply unit 300 and the microwave unit 400.

[0067] Figure 2 FIG. 5 is a diagram for explaining the structure of a polarizing plate 500 according to an embodiment of the present invention. Figure 2 (a) is a plan view of the polarizing plate 500 observed from the processing space s direction inside the chamber 100, Figure 2 (b) is observed from above Figure 1 The chamber body 110 may be a cylindrical shape having a circular cross section when viewed from above, but Figure 2 For the sake of illustration, the curvature of the chamber sidewall 111 is not shown.

[0068] Reference Figure 2 The polarizer 500 according to an embodiment of the present invention includes a transmission layer 510 and a plurality of grid patterns 520. The transmission layer 510 is made of a material that transmits microwaves. For example, the transmission layer 510 may be made of quartz.

[0069] The transmissive layer 510 can be disposed on the sidewall 111 of the chamber. For example, the first surface 511 of the transmissive layer 510 can be set to contact the sidewall 111 of the chamber, and the second surface 512 is exposed to the processing space s inside the chamber 100. The thickness of the transmissive layer 510 can be determined within an appropriate range according to the wavelength (λ) of the microwave used for substrate processing and the refractive index (n) of the transmissive layer 510. For example, the thickness of the transmissive layer 510 can be determined as the thickness of the following formula (1).

[0070]

[0071] A plurality of grating patterns 520 can be arranged on the second surface 512 of the transmissive layer 510 in the direction of the processing space s at a predetermined interval d. The grating patterns 520 are made of a material that reflects microwaves. For example, the grating patterns 520 can be formed of a metal such as aluminum (Al). The grating patterns 520 can be formed of the same material as the chamber body 110. The grating patterns 520 can be formed on the second surface 512 of the transmissive layer 510 in a line shape extending in the vertical direction (the height direction of the chamber 100).

[0072] The interval d between the plurality of grating patterns 520 is set to be smaller than the wavelength (λ) of the microwave supplied from the microwave unit 400. The interval d between the grating patterns 520 is set to be smaller than the wavelength (λ) of the microwave, so that the microwave of the first polarization having a vibration direction perpendicular to the extending direction of the grating patterns 520 in the microwaves supplied to the processing space s can be reflected by the grating patterns 520.

[0073] Figure 3 And Figure 4 is a schematic diagram for explaining the effect of the polarizer 500 according to an embodiment of the present invention. Figure 3 is the case where the polarizer 500 is not provided, Figure 4 is the case where the polarizer 500 is provided. Figure 4 The polarizer 500 of Figure 2 is the polarizer 500 configured to include the transmissive layer 510 and a plurality of grating patterns 520 as shown.

[0074] First, refer to Figure 3, the microwaves incident on the sidewall 111 of the incident chamber are reflected from the sidewall 111 of the chamber regardless of polarization. That is, microwaves of the first polarization and microwaves of the second polarization having vibration directions perpendicular to each other are reflected from the sidewall 111 of the chamber in the same manner, and there is no phase difference between the microwaves of the first polarization and the microwaves of the second polarization. Therefore, if a standing wave is formed in the processing space s, the intensity of the electromagnetic field varies according to the position. As a result, hot spots with the maximum intensity and cold spots with the minimum intensity are formed on the surface of the substrate W processed by microwaves in the processing space s, and thus a problem of temperature uniformity occurs on the surface of the substrate W.

[0075] In contrast, as Figure 4 shown, when a polarizer 500 is provided on the sidewall 111 of the chamber, microwaves of the first polarization MWa among the incident microwaves are reflected from the surface of the polarizer 500, and microwaves of the second polarization MWb pass through the polarizer 500 and are reflected from the sidewall 111 of the chamber. Therefore, a standing wave is formed in the processing space s in the chamber by synthesizing the microwaves of the first polarization MWa and the microwaves of the second polarization MWb. At this time, the microwaves of the second polarization MWb are reflected after moving approximately the thickness of the transmission layer 510 more than the microwaves of the first polarization MWa, so a path difference corresponding to twice the thickness of the transmission layer 510 is generated between the microwaves of the first polarization MWa and the microwaves of the second polarization MWb. Due to such a path difference, a phase difference is generated between the microwaves of the first polarization MWa and the microwaves of the second polarization MWb. Due to such a phase difference, the difference in the intensity of the electromagnetic field according to the position of the processing space s is smaller than Figure 3 mitigated.

[0076] The phase difference between the microwaves of the first polarization MWa and the microwaves of the second polarization MWb depends on the thickness of the transmission layer 510 of the polarizer 500. Therefore, by appropriately adjusting the thickness of the transmission layer 510, the intensity of the electromagnetic field according to the position of the processing space s can be appropriately formed. In an embodiment of the present invention, the phase difference between the microwaves of the first polarization MWa and the microwaves of the second polarization MWb can be adjusted to 1 / 4 or 3 / 4 of the wavelength (λ) of the microwaves.

[0077] For example, the thickness of the transmission layer 510 of the polarizer 500 can be appropriately selected so that the phase difference between the microwaves of the first polarization MWa and the microwaves of the second polarization MWb becomes about 1 / 4 of the wavelength (λ) of the microwaves. In this case, a uniform electromagnetic field intensity can be formed regardless of the position in the processing space s, and the temperature uniformity on the surface of the substrate W can be significantly improved.

[0078] The first polarized microwave MWa reflected from the surface of the polarizer 500 may be a polarized microwave vibrating in a direction perpendicular to the extending direction of the grating pattern 520. For example, when the grating pattern 520 is formed extending in the vertical direction (the height direction of the chamber 100), the first polarized microwave MWa may be vibrating in the horizontal direction. That is, the vibrating direction of the first polarized microwave MWa may be perpendicular to the extending direction of the grating pattern 520. The first polarized microwave MWa may be an s-wave.

[0079] In order to reflect the first polarized microwave MWa from the surface of the polarizer 500, the interval d between the plurality of grating patterns 520 may be set to be smaller than the wavelength (λ) of the microwave.

[0080] The second polarized microwave MWb transmitted through the transmission layer 510 of the polarizer 500 may be a polarized microwave vibrating in a direction horizontal to the extending direction of the grating pattern 520. For example, when the grating pattern 520 is formed extending in the vertical direction (the height direction of the chamber 100), the vibrating direction of the second polarized microwave MWb may be the same vertical direction as the extending direction of the grating pattern 520. The second polarized microwave MWb may be a p-wave.

[0081] Figure 5 And Figure 6 is a schematic cross-sectional view of the chamber viewed from above, showing different examples of the configuration of the plurality of grating patterns 520. The plurality of grating patterns 520 may be configured across the entire inner circumferential surface of the chamber side wall 111 as Figure 5 shown, or may be configured only in a partial area of the inner circumferential surface of the chamber side wall 111 as Figure 6 shown. That is, the plurality of grating patterns 520 may be formed only in the first area of the chamber side wall 111 and not formed in the second area. The areas of the first area and the second area may be the same.

[0082] In Figure 6 it is illustrated that the transmission layer 510 is also formed in the second area where the plurality of grating patterns 520 are not formed, but the transmission layer 510 may not be formed in the second area.

[0083] According to the area where the grating pattern 520 is formed, the thickness of the transmission layer 510 may be adjusted to generate an appropriate phase difference between the first polarized microwave MWa and the second polarized microwave MWb. That is, in the Figure 5 configuration structure of the grating pattern 520 and the Figure 6 configuration structure of the grating pattern 520, the thickness of the respective transmission layers 510 may be adjusted to be different.

[0084] In Figure 2It is described in [the patent text] that the grating pattern 520 is formed by extending in the vertical direction (the height direction of the chamber 100) on the second surface 512 of the transmissive layer 510, but the present invention is not limited thereto. For example, the grating pattern 520 may also be formed by extending in the horizontal direction (the circumferential direction of the chamber 100) as Figure 7 shown.

[0085] In this case, the polarized microwave vibrating in the direction perpendicular to the extending direction of the grating pattern 520 is reflected by the polarizer 500, and the polarized microwave vibrating in the direction horizontal to the extending direction of the grating pattern 520 transmits through the transmissive layer 510 of the polarizer 500 and is reflected by the chamber sidewall 111. Only different from the Figure 2 embodiment, the polarized microwave vibrating in the vertical direction (the height direction of the chamber 100) can be reflected by the polarizer 500, and the polarized microwave vibrating in the horizontal direction (the circumferential direction of the chamber 100) transmits through the transmissive layer 510 and is reflected by the chamber sidewall 111.

[0086] Figure 8 Fig. [X] shows a substrate processing apparatus according to another embodiment of the present invention. Compared with the Figure 1 embodiment, it is the same except for adding the nozzle 320 and the high-frequency power supplies 330 and 340 for plasma generation. For the structures same as those in the Figure 1 embodiment, the same reference numerals are marked and the description is omitted.

[0087] Referring to Figure 8 , the substrate processing apparatus 10 according to another embodiment of the present invention further includes a nozzle 320 for injecting gas into the processing space s. The nozzle 320 can be disposed inside the chamber 100 so as to be vertically opposite to the substrate support unit 200. The gas supplied through the gas nozzle 318 is injected into the processing space s through a plurality of gas injection holes 322 formed in the nozzle 320. The nozzle 320 can be provided with a diameter larger than that of the substrate W to be processed and the electrostatic chuck 220.

[0088] The nozzle 320 can be made of a microwave transmissive material so that the microwave supplied from the microwave unit 400 can transmit through and reach the substrate W.

[0089] The nozzle 320 can function as an upper electrode for plasma generation. For this purpose, the nozzle 320 can include an upper power supply 330 or an electrode connected to the ground. The upper power supply 330 can be a high-frequency power supply providing high-frequency power in the range of several hundred kHz to several hundred MHz. The electrode can be a transparent electrode coated on the surface of the nozzle 320 or built into the main body of the nozzle 320. For example, the electrode can be an ITO (Indium Tin Oxide) electrode.

[0090] The substrate support unit 200 can function as a lower electrode. For this purpose, the lower power supply 340 or ground can be connected to the base plate 210. The lower power supply 340 can be a high-frequency power supply in the range of several hundred kHz to several hundred MHz.

[0091] In order to generate plasma in the processing space s, the upper electrode can be grounded, and high-frequency power can be applied from the lower power supply 340 to the lower electrode. Optionally, high-frequency power can be applied from the upper power supply 330 to the upper electrode, and the lower electrode can be grounded. Additionally, optionally, high-frequency power can be applied to both the upper electrode and the lower electrode. The high-frequency power supplies 330, 340 can apply power to the upper electrode or the lower electrode continuously or in a pulse mode.

[0092] The control unit 600 can control the overall operation of the substrate processing apparatus 10. As an example, the control unit 600 can control the operation of the gas supply unit 300, the microwave unit 400, and the high-frequency power supplies 330, 340.

[0093] Figure 8 The substrate processing apparatus 10 can be used to heat-treat the substrate W using plasma processing and / or microwaves. For example, it can be used to plasma-process the substrate W or heat-treat the substrate W, or it can be used to perform a heat-treatment process that uses microwaves after performing a plasma processing process for plasma-processing the substrate W.

[0094] The control unit 600 can control the gas supply unit 300 to supply a predetermined precursor gas to the processing space s, and control the high-frequency power supplies 330, 340 to generate plasma in the processing space s, thereby performing a plasma processing process for forming a reaction layer with the precursor on the surface of the substrate W. Then, the control unit 600 can control the microwave unit 400 to supply microwaves to the processing space s to heat the substrate W, thereby performing a heat-treatment process for removing the reaction layer generated in the plasma processing process. The substrate processing process can be an atomic layer etching (ALE) process.

[0095] This embodiment and the accompanying drawings in this specification only clearly show a part of the technical concept included in the present invention. It is obvious that variations and specific embodiments that can be easily derived by those skilled in the art within the scope of the technical concept included in the specification and drawings of the present invention are all included in the scope of the rights of the present invention.

[0096] Therefore, the concept of the present invention should not be limited to the illustrated embodiments. Not only the appended claims, but all concepts equivalent or equivalently deformed to the claims belong to the scope of the concept of the present invention.

Claims

1. A substrate processing device, comprising: a chamber providing a processing space therein for substrate processing; A substrate supporting unit is disposed inside the chamber; a microwave unit for supplying microwaves to the processing space; as well as The polarizer is disposed on the side wall of the chamber and reflects microwaves with a first polarization and transmits microwaves with a second polarization.

2. The substrate processing apparatus according to claim 1, wherein: The polarizer comprises: a transmissive layer, disposed on the side wall of the chamber such that a first surface contacts the side wall of the chamber and a second surface opposite to the first surface is exposed to the processing space; and A plurality of grid patterns are disposed on the second surface of the transmission layer exposed to the processing space.

3. The substrate processing apparatus according to claim 2, wherein: The transmission layer is provided by a material that transmits microwaves supplied from the microwave unit.

4. The substrate processing apparatus according to claim 3, wherein: The thickness t of the transmission layer is determined by the following relationship: Here, λ is the wavelength of microwaves supplied from the microwave unit, and n is the refractive index of the transmission layer.

5. The substrate processing apparatus according to claim 3, wherein: The plurality of grid patterns are arranged in a line shape extending in a first direction and spaced apart from each other by a predetermined interval, The predetermined interval is smaller than a wavelength of microwaves supplied from the microwave unit.

6. The substrate processing apparatus according to claim 5, wherein: The first direction is a vertical direction which is the same as a height direction of the chamber or a horizontal direction which is the same as a circumferential direction of the chamber.

7. The substrate processing apparatus according to claim 6, wherein: The vibration direction of the first polarized microwave is perpendicular to the first direction, The vibration direction of the second polarized microwave is parallel to the first direction.

8. The substrate processing apparatus according to claim 1, wherein: The microwaves of the first polarization among the microwaves supplied from the microwave unit to the processing space are reflected by the polarizer, and the microwaves of the second polarization are transmitted through the polarizer and reflected by the side wall of the chamber, and then transmitted through the polarizer and supplied to the processing space. A standing wave composed of the microwaves of the first polarization reflected by the polarizer and the microwaves of the second polarization reflected by the side wall of the chamber is formed in the processing space.

9. The substrate processing apparatus according to claim 8, wherein: There is a phase difference between the microwaves of the first polarization reflected by the polarizer and the microwaves of the second polarization reflected by the sidewall of the chamber.

10. The substrate processing apparatus according to claim 9, wherein: The phase difference is 1 / 4 or 3 / 4 of the wavelength of the microwave.

11. The substrate processing apparatus according to claim 1, wherein: The polarizing plate is disposed across the entire inner circumference of the side wall of the chamber.

12. The substrate processing apparatus according to claim 1, wherein: The polarizing plate is disposed only in the first region of the inner peripheral surface of the side wall of the chamber and is not disposed in the second region.

13. The substrate processing apparatus according to claim 12, wherein: The first region and the second region have the same area.

14. A substrate processing device, comprising: a chamber providing a processing space therein for substrate processing; A substrate supporting unit is disposed inside the chamber; a microwave unit for supplying microwaves to the processing space; a showerhead, arranged between the processing space and the microwave unit; A high-frequency power supply connected to the shower head or the substrate support unit to supply high-frequency power for generating plasma in the processing space; a polarizer, disposed on a side wall of the chamber and reflecting microwaves of a first polarization and transmitting microwaves of a second polarization; as well as Control department.

15. The substrate processing apparatus according to claim 14, wherein: The shower head is formed of a microwave-transmissive material that transmits microwaves supplied from the microwave unit.

16. The substrate processing apparatus according to claim 15, wherein: The showerhead includes an upper electrode, and the upper electrode is a transparent electrode.

17. The substrate processing apparatus according to claim 14, wherein: The control unit controls to execute a substrate processing process, The substrate processing process comprises: A plasma processing process, controlling the high frequency power supply to generate plasma in the processing space and plasma-processing the substrate; and In a heat treatment process, the microwave unit is controlled to heat-treat the substrate by supplying microwaves to the treatment space.

18. The substrate processing apparatus according to claim 17, wherein: The substrate processing process is an atomic layer etching process.

19. The substrate processing apparatus according to claim 17, wherein: The control unit performs pulse control on the high-frequency power source.

20. A substrate processing device, comprising: a chamber providing a processing space therein for substrate processing; a substrate support unit disposed inside the chamber and including a refrigerant flow path for a cooling fluid to flow inside the substrate support unit; a gas supply unit for supplying a processing gas to the processing space; a microwave unit for supplying microwaves to the processing space; as well as a polarizer disposed on at least a portion of the side wall of the chamber and reflecting microwaves of the first polarization and transmitting microwaves of the second polarization, The polarizer comprises: a transmission layer provided on the side wall of the chamber with a first surface in contact with the side wall of the chamber and a second surface opposite to the first surface exposed to the processing space and transmitting the microwaves supplied from the microwave unit; and a plurality of grid patterns, which are disposed on the second surface of the transmission layer exposed to the processing space and are extended in the first direction in a manner spaced apart from each other by intervals smaller than the wavelength of the microwaves supplied from the microwave unit; The thickness t of the transmission layer is determined by the following relationship: Here, λ is the wavelength of microwaves supplied from the microwave unit, and n is the refractive index of the transmission layer.

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