Resonator, filter, multiplexer, radio frequency front-end module and electronic equipment

Abstract

The invention relates to a resonator, a filter, a multiplexer, a radio frequency front-end module and electronic equipment, the resonator comprises a substrate, a piezoelectric substrate and an interdigital transducer, the piezoelectric substrate and the interdigital transducer are sequentially arranged on the substrate, and the substrate is made of a silicon carbide material; wherein the first angle phi of the Euler angle of the silicon carbide material meets the following conditions: 0-degree < = phi < = 20 degrees, 70-degree < = phi < = 110 degrees, 160-degree < = phi < = 200 degrees, 250-degree < = phi < = 290 degrees, and 340-degree < = phi lt; one of 360 degrees; the third angle psi of the Euler angle of the silicon carbide material satisfies the following conditions: 0 degree < = psi < = 20 degrees, 70 degree < = psi < = 110 degrees, 160 degree < = psi < = 200 degrees, 250 degree < = psi < = 290 degrees, and 340 degree < = psi < lt; and 360 degrees. According to the resonator, the Euler angle of the substrate material is limited, so that the suppression effect of the substrate on a high-frequency miscellaneous mode is improved, and the Q value and the performance of the resonator are improved.

Description

Technical Field

[0001] This application relates to the field of radio frequency, and in particular, to a resonator, a filter including the resonator, a multiplexer including the filter, a radio frequency front-end module including the multiplexer, and an electronic device including the radio frequency front-end module. Background Art

[0002] In the field of radio frequency, a resonator usually consists of a piezoelectric substrate and multiple interdigital transducers. Through the cooperation of each interdigital transducer and the piezoelectric substrate, the mutual conversion between electrical signals and acoustic wave signals is achieved.

[0003] In the prior art, in order to achieve the mutual conversion between electrical signals and acoustic wave signals, a piezoelectric substrate is usually prepared using a piezoelectric material. However, due to the piezoelectric characteristics of the piezoelectric material itself, the resonator will generate high-frequency parasitic modes at high frequencies, resulting in relatively poor quality factor (Q value) of the resonator and relatively poor performance of the resonator. Therefore, how to suppress high-frequency parasitic modes to improve the quality factor and performance of the resonator is an urgent problem to be solved currently. Summary of the Invention

[0004] In view of the above deficiencies of the prior art, the purpose of this application is to provide a solution for improving the Q value and performance, specifically including the following technical solutions:

[0005] In a first aspect, an embodiment of this application provides a resonator, including a substrate, a piezoelectric substrate, and interdigital transducers sequentially arranged on the substrate. The substrate is prepared using silicon carbide material, wherein: the first angle φ of the Euler angle of the silicon carbide material satisfies one of 0° ≤ φ ≤ 20°, 70° ≤ φ ≤ 110°, 160° ≤ φ ≤ 200°, 250° ≤ φ ≤ 290°, 340° ≤ φ < 360°; the third angle ψ of the Euler angle of the silicon carbide material satisfies one of 0° ≤ ψ ≤ 20°, 70° ≤ ψ ≤ 110°, 160° ≤ ψ ≤ 200°, 250° ≤ ψ ≤ 290°, 340° ≤ ψ < 360°.

[0006] The resonator of this application realizes the function of suppressing high-frequency parasitic modes of the resonator of this application by setting the material of the substrate as silicon carbide material to utilize the strong restraint effect of the silicon carbide material on high-frequency parasitic modes. The resonator of this application also restricts the range of the Euler angle of the silicon carbide material to improve the suppression effect of the silicon carbide material on high-frequency parasitic modes, thereby improving the suppression effect of the resonator of this application on high-frequency parasitic modes and improving the Q value and performance of the resonator of this application.

[0007] Second aspect, an embodiment of the present application provides a resonator, including a substrate, and a high-frequency spurious mode suppression layer, a piezoelectric substrate, and an interdigital transducer sequentially disposed on the substrate; the substrate is made of silicon carbide material, and the piezoelectric substrate is made of lithium niobate material; wherein, the material of the high-frequency spurious mode suppression layer includes lithium niobate and silicon carbide; or, the material used for the high-frequency spurious mode suppression layer includes at least one of silicon oxide and polysilicon; or, the material of the high-frequency spurious mode suppression layer is silicon carbide material doped with polysilicon.

[0008] The resonator of the present application sets a high-frequency spurious mode suppression layer between the piezoelectric substrate and the substrate, so that the high-frequency spurious mode suppression layer can, based on its own material characteristics, isolate, attenuate, or change the propagation path of the spurious mode to avoid the deterioration of high-frequency performance caused by high-frequency electron spillage. That is, the high-frequency spurious mode suppression layer is used to suppress high-frequency spurious modes to improve the Q value and performance of the resonator of the present application.

[0009] Third aspect, an embodiment of the present application provides a resonator, including a substrate, and a piezoelectric substrate and an interdigital transducer sequentially disposed on the substrate, wherein the substrate is made of silicon carbide material, the piezoelectric substrate is made of lithium niobate material, and the crystal cutting angle of lithium niobate in the YX plane is greater than or equal to 5° and less than or equal to 20°.

[0010] The resonator of the present application restricts the crystal cutting angle of the piezoelectric substrate in the YX plane to improve the electromechanical coupling coefficient of the piezoelectric substrate, thereby improving the acoustic-electric conversion efficiency of the piezoelectric substrate, enhancing the sensitivity and response speed of the resonator of the present application. Furthermore, the Q value and performance of the resonator of the present application are improved.

[0011] Fourth aspect, an embodiment of the present application provides a filter, including a resonator.

[0012] Fifth aspect, an embodiment of the present application provides a multiplexer, including an antenna, and a transmitting filter and a receiving filter respectively communicatively connected to the antenna, and at least one of the transmitting filter and the receiving filter includes a filter.

[0013] Sixth aspect, an embodiment of the present application provides a radio frequency front-end module, including a filter.

[0014] Seventh aspect, an embodiment of the present application provides an electronic device, including a radio frequency front-end module.

[0015] It can be understood that the electronic device, radio frequency front-end module, multiplexer, and filter provided in the seventh aspect to the fourth aspect of the present application all have better Q values and performance because they adopt the resonators provided in the first aspect to the third aspect of the present application. Description of the Drawings

[0016] Figure 1Schematic diagram of the structure of an electronic device provided in an embodiment of the present application;

[0017] Figure 2 Schematic diagram of the structure of a radio frequency front-end module provided in an embodiment of the present application;

[0018] Figure 3 Schematic diagram of the structure of a multiplexer provided in an embodiment of the present application;

[0019] Figure 4 Schematic diagram of the structure of a filter provided in an embodiment of the present application;

[0020] Figure 5 Schematic diagram of the structure of a resonator provided in an embodiment of the present application;

[0021] Figure 6 Schematic diagram of the external shape structure of a resonator provided in an embodiment of the present application;

[0022] Figure 7 Comparison diagram of admittance curves of Embodiments 1-3, Comparative Examples 1-6 provided in an embodiment of the present application;

[0023] Figure 8 Comparison diagram of admittance curves of Embodiments 4-6, Comparative Examples 7-12 provided in an embodiment of the present application;

[0024] Figure 9 Comparison diagram of admittance curves of Embodiments 7-9, Comparative Examples 13-18 provided in an embodiment of the present application;

[0025] Figure 10 Comparison diagram of admittance curves of Embodiments 10-12, Comparative Examples 19-24 provided in an embodiment of the present application;

[0026] Figure 11 Comparison diagram of admittance curves of Embodiments 13-16, Comparative Examples 25-29 provided in an embodiment of the present application;

[0027] Figure 12 Comparison diagram of admittance curves of Embodiments 17-21, Comparative Examples 30-33 provided in an embodiment of the present application;

[0028] Figure 13 Comparison diagram of admittance curves of Embodiments 22-25, Comparative Examples 34-38 provided in an embodiment of the present application;

[0029] Figure 14Admittance curve comparison diagrams of Embodiment 26 - Embodiment 30 and Comparative Example 39 - Comparative Example 42 provided in an embodiment of the present application;

[0030] Figure 15 Admittance curve comparison diagrams of Embodiment 31 - Embodiment 33 and Comparative Example 43 - Comparative Example 48 provided in an embodiment of the present application;

[0031] Figure 16 Admittance curve comparison diagrams of Embodiment 34 - Embodiment 36 and Comparative Example 49 - Comparative Example 54 provided in an embodiment of the present application;

[0032] Figure 17 Admittance curve comparison diagrams of Embodiment 37 - Embodiment 39 and Comparative Example 55 - Comparative Example 60 provided in an embodiment of the present application;

[0033] Figure 18 Admittance curve comparison diagrams of Embodiment 40 - Embodiment 42 and Comparative Example 61 - Comparative Example 66 provided in an embodiment of the present application;

[0034] Figure 19 Admittance curve comparison diagrams of Embodiment 43 - Embodiment 51 provided in an embodiment of the present application;

[0035] Figure 20 Admittance curve comparison diagrams of Embodiment 52 - Embodiment 60 provided in an embodiment of the present application;

[0036] Figure 21 Admittance curve comparison diagrams of Embodiment 61 - Embodiment 69 provided in an embodiment of the present application;

[0037] Figure 22 Admittance curve comparison diagrams of Embodiment 70 - Embodiment 78 provided in an embodiment of the present application;

[0038] Figure 23 Admittance curve comparison diagrams of Embodiment 79 - Embodiment 83, Comparative Example 67 and Comparative Example 68 provided in an embodiment of the present application;

[0039] Figure 24 Another structural schematic diagram of the resonator provided in an embodiment of the present application;

[0040] Figure 25 Another structural schematic diagram of the resonator provided in an embodiment of the present application;

[0041] Figure 26 Another structural schematic diagram of the resonator provided in an embodiment of the present application;

[0042] Figure 27The admittance curve diagram of Embodiment 84 provided in an embodiment of the present application;

[0043] Figure 28 The admittance curve diagram of Embodiment 85 provided in an embodiment of the present application;

[0044] Figure 29 The admittance curve diagram of Embodiment 86 provided in an embodiment of the present application;

[0045] Figure 30 The admittance curve diagram of Comparative Example 69 in the prior art;

[0046] Figure 31 The comparative diagram of the admittance curves of Embodiments 87 - 91 provided in an embodiment of the present application;

[0047] Figure 32 The partial comparative diagram of the admittance curves of Embodiments 87 - 91 provided in an embodiment of the present application;

[0048] Figure 33 Another partial comparative diagram of the admittance curves of Embodiments 87 - 91 provided in an embodiment of the present application;

[0049] Figure 34 The comparative diagram of the admittance curves of Embodiments 92 - 96 provided in an embodiment of the present application;

[0050] Figure 35 The partial comparative diagram of the admittance curves of Embodiments 92 - 96 provided in an embodiment of the present application;

[0051] Figure 36 Another partial comparative diagram of the admittance curves of Embodiments 92 - 96 provided in an embodiment of the present application;

[0052] Figure 37 The comparative diagram of the admittance curves of Embodiments 97 - 100 provided in an embodiment of the present application;

[0053] Figure 38 The comparative diagram of the admittance curves of Embodiments 101 - 104 provided in an embodiment of the present application;

[0054] Figure 39 The schematic cross - sectional structure diagram of the resonator provided in an embodiment of the present application;

[0055] Figure 40 Another schematic cross - sectional structure diagram of the resonator provided in an embodiment of the present application;

[0056] Figure 41Another cross-sectional structure diagram of the resonator provided in an embodiment of the present application. Detailed implementation manners

[0057] To facilitate the understanding of the present application, the present application will be described more comprehensively below with reference to the relevant drawings. The preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0058] The descriptions of the following embodiments refer to the attached drawings for illustrating specific embodiments in which the present application can be implemented. The serial numbers assigned to the components herein, such as "first", "second", etc., are only used to distinguish the described objects and do not have any sequential or technical meanings. The terms "connection" and "coupling" in the present application, unless otherwise specified, include both direct and indirect connections (couplings). The directional terms mentioned in the present application, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outer", "side", etc., are only with reference to the directions in the attached drawings. Therefore, the directional terms are used to better and more clearly illustrate and understand the present application, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation of the present application.

[0059] In the description of the present application, it should be noted that, unless otherwise clearly defined and limited, the terms "installation", "connection", and "coupling" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations. It should be noted that the terms "first", "second", etc. in the specification, claims, and drawings of the present application are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "include", "may include", "comprise", or "may comprise" used in the present application indicate the existence of the corresponding functions, operations, elements, etc. disclosed, and do not limit the existence of one or more other functions, operations, elements, etc. In addition, the term "include" or "comprise" means the existence of the corresponding features, numbers, steps, operations, elements, components, or combinations thereof disclosed in the specification, and does not exclude the existence or addition of one or more other features, numbers, steps, operations, elements, components, or combinations thereof, and is intended to cover non-exclusive inclusion.

[0060] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0061] Please refer to Figure 1 the schematic structural diagram of the electronic device 500 provided in an embodiment of this application as shown.

[0062] As Figure 1 shown, the electronic device 500 of this application includes a circuit board 501 and a radio frequency front-end module 400. The radio frequency front-end module 400 is mounted on the circuit board 501 and is electrically connected to the circuits on the circuit board 501.

[0063] The electronic device 500 of this application realizes signal reception and / or transmission through the radio frequency front-end module 400. Exemplarily, the electronic device 500 includes at least one of a computer, a mobile phone, a tablet computer, a smart watch, a navigator, etc., and this application does not make special limitations thereto.

[0064] Please refer to Figure 2 the schematic structural diagram of the radio frequency front-end module 400 provided in an embodiment of this application as shown.

[0065] As Figure 2 shown, the radio frequency front-end module 400 includes a signal terminal 401, a switch 402, an amplifier 403, and a filter 200. Among them, the signal terminal 401 is used to receive external radio frequency signals or send radio frequency signals externally. The switch 402 is connected between the signal terminal 401 and the filter 200 to control the signal transmission between the signal terminal 401 and the filter 200. The filter 200 is used to filter the signals transmitted to the filter 200 and output signals with a preset frequency. The amplifier 403 is electrically connected to the filter 200 to amplify the radio frequency signals received by the signal terminal 401 and processed by the filter 200; or, the amplifier 403 amplifies the radio frequency signals from the previous-stage circuit and outputs them to the filter 200 for filtering processing, so as to be transmitted through the signal terminal 401. Among them, the signal terminal 401 can be set as an antenna port for connecting an antenna.

[0066] It can be understood that in another embodiment, the filter 200 can be one or multiple. Multiple filters 200 can form a multiplexer 300. The multiplexer 300 can be a duplexer or a triplexer, etc., and this application does not make special limitations thereto.

[0067] Please refer to Figure 3 the schematic structural diagram of the multiplexer 300 provided in an embodiment of this application as shown.

[0068] Exemplarily, as Figure 3 shown, the multiplexer 300 includes a common terminal 301, a transmit filter 200a, and a receive filter 200b. Among them, both the transmit filter 200a and the receive filter 200b include a first port 302 and a second port 303, and the first ports 302 of the transmit filter 200a and the receive filter 200b are both communicatively connected to the common terminal 301.

[0069] For the transmit filter 200a, the first port 302 is used to output a signal, and the second port 303 is used to receive a signal. For the receive filter 200b, the first port 302 is used to receive a signal, and the second port 303 is used to output a signal.

[0070] Exemplarily, the common terminal 301 can be used to connect to the switch 402 in the RF front-end module 400, so as to connect to the antenna port through the switch 402. When the RF signal received by the antenna port is transmitted from the common terminal 301 to the first port 302, the receive filter 200b is used to receive the RF signal and perform filtering processing on the RF signal, and then the RF signal within a specific frequency range after the filtering processing is transmitted outward via the second port 303. When the RF signal is transmitted to the second port 303 of the transmit filter 200a, the transmit filter 200a is used to perform filtering processing on the RF signal, and then the RF signal within a specific frequency range after the filtering processing is sequentially transmitted to the subsequent switch 402 and the antenna port via the first port 302 and the common terminal 301, so that the filtered RF signal can be transmitted through the antenna connected to the antenna port.

[0071] Please refer to Figure 4 the structural schematic diagram of the filter 200 provided in an embodiment of the present application shown.

[0072] As Figure 4 shown, the filter 200 of the present application includes a signal input terminal 201, a signal output terminal 202, a ground port 203, and a plurality of resonators 100. Among them, a part of the resonators 100 are connected in series between the signal input terminal 201 and the signal output terminal 202, and one end of another part of the resonators 100 is connected to the ground port 203, and the other end is connected to the series path between the signal input terminal 201 and the signal output terminal 202. It can be understood that the mutual series and parallel connection of the plurality of resonators 100 form a multi-stage resonance circuit, which can realize the filtering function of the filter 200 of the present application for signals of a preset frequency.

[0073] It should be noted that the present application Figure 4For illustrative purposes only, during the actual use of the filter 200 in this application, the filter 200 in this application can be applied to phase-offset interdigital filters (POI filters), asymmetric surface acoustic wave filters (NSAW filters), temperature-compensated surface acoustic wave filters (TCSAW filters), and filter devices formed by interconnecting them in a certain topology, etc., including devices with interdigital transducers. This application does not limit this.

[0074] Please refer to Figure 5 and Figure 6 where Figure 5 is a schematic structural diagram of the resonator 100 provided in an embodiment of this application, Figure 6 is a schematic external structure diagram of the resonator 100 provided in an embodiment of this application.

[0075] As Figure 5 and Figure 6 shown, the resonator 100 in this application includes a substrate 10, and a piezoelectric substrate 20 and an interdigital transducer 30 stacked in sequence on the surface of the substrate 10. Among them, the number of interdigital transducers 30 can be one or more. Each interdigital transducer 30 includes two bus bars 31 arranged at intervals and a plurality of electrode fingers 32 arranged at intervals between the two bus bars 31. Among them, some of the plurality of electrode fingers 32 are connected to one bus bar 31, and the other part of the plurality of electrode fingers 32 are connected to the other bus bar 31. The two bus bars 31 can be parallel to each other, and the plurality of electrode fingers 32 can also be parallel to each other.

[0076] For ease of description, the two bus bars 31 are defined as the first bus bar 31a and the second bus bar 31b. The electrode fingers 32 connected to the first bus bar 31a are defined as the first electrode fingers 32a, and the electrode fingers 32 connected to the second bus bar 31b are defined as the second electrode fingers 32b.

[0077] Specifically, the first electrode fingers 32a and the second electrode fingers 32b are alternately arranged along the first direction 001. The first electrode fingers 32a and the second electrode fingers 32b both extend along the second direction 002. Specifically, as Figure 6 shown, along the first direction 001, there is one second electrode finger 32b between any two adjacent first electrode fingers 32a, and there is one first electrode finger 32a between any two adjacent second electrode fingers 32b. Among them, the overlapping dimension of the projection of an adjacent pair of electrode fingers (the first electrode finger 32a and the second electrode finger 32b) on a straight line parallel to the second direction 002 is the aperture size of the interdigital transducer.

[0078] Among them, the first direction 001 is the extending direction of the bus bar 31, that is, both the first bus bar 31a and the second bus bar 31b extend along the first direction 001. The second direction 002 intersects with the first direction 001. Exemplarily, the second direction 002 and the first direction 001 may be perpendicular to each other, so that each electrode finger 32 has a 90° angle with the bus bar connected thereto. Exemplarily, the second direction 002 and the first direction 001 may also not be perpendicular, so that each electrode finger 32 has an angle greater than or less than 90° with the bus bar connected thereto.

[0079] In the embodiment of the present application, when an external excitation signal is applied to the interdigital transducer 30, the interdigital transducer 30 converts the electrical signal into a surface acoustic wave. The surface acoustic wave propagates along the surface of the piezoelectric substrate 20 and is reflected by the reflection grating, and then is converted into an electrical signal by the interdigital transducer 30 for output.

[0080] Among them, the surface acoustic wave is used to realize the frequency selection function and signal processing function of the resonator 100 of the present application. During the propagation of the surface acoustic wave, the main propagation direction of the surface acoustic wave is the first direction 001. However, in the actual process, due to effects such as edge effect and acoustic wave diffraction, the propagation direction of the surface acoustic wave formed on the surface of the piezoelectric substrate 20 may also be other directions. In one embodiment, the surface acoustic waves propagating in other directions are absorbed by an acoustic absorption material (not shown in the figure).

[0081] It can be understood that the present application can be applied to high-Q piezoelectric thin film on insulator type surface acoustic wave resonators (POI SAW resonators), conventional surface acoustic wave resonators (NSAW resonators), temperature compensated surface acoustic wave resonators (TCSAW resonators), and resonator devices formed by certain topological interconnections thereof, etc., including devices with interdigital transducers. The present application does not limit this.

[0082] In the embodiment of the present application, the material of the substrate 10 is prepared from silicon carbide material. Compared with the prior art solution of setting the substrate material as silicon, the silicon carbide material has a stronger energy confinement ability. It can be understood that by setting the material of the substrate 10 as silicon carbide in the resonator 100 of the present application and reasonably setting the Euler angles of the silicon carbide material, the high-frequency hybrid modes generated during the operation of the resonator 100 of the present application can be suppressed by the substrate 10. That is, while the substrate 10 realizes the supporting effect on the piezoelectric substrate 20 and the interdigital transducer 30, it can also suppress the generation of high-frequency hybrid modes. Thereby reducing the loss of signals caused by high-frequency hybrid modes, ensuring the Q value of the resonator 100 of the present application, and improving the performance of the resonator 100 of the present application. Among them, the high-frequency hybrid mode refers to a hybrid mode with a frequency higher than the resonance frequency of the resonator.

[0083] On the other hand, compared with the solution of setting the substrate material as silicon in the prior art, the silicon carbide material also has better heat dissipation ability and smaller resistance. Among them, the better heat dissipation ability improves the heat dissipation efficiency of the resonator 100 of the present application, thereby reducing the influence of temperature on the working performance of the resonator 100 of the present application. The smaller resistance enables the substrate to generate less heat during operation, thereby reducing the energy loss of the resonator 100 of the present application. Thereby, the Q value and performance of the resonator 100 of the present application are improved.

[0084] The first angle φ of the Euler angles of the silicon carbide material satisfies one of: 0° ≤ φ ≤ 20°, 70° ≤ φ ≤ 110°, 160° ≤ φ ≤ 200°, 250° ≤ φ ≤ 290°, 340° ≤ φ < 360°; the third angle ψ of the Euler angles of the silicon carbide material satisfies one of: 0° ≤ ψ ≤ 20°, 70° ≤ ψ ≤ 110°, 160° ≤ ψ ≤ 200°, 250° ≤ ψ ≤ 290°, 340° ≤ ψ < 360°.

[0085] Among them, through the limitation of the first angle and the third angle of the above Euler angles of the resonator 100 of the present application, the energy confinement ability of the silicon carbide material is ensured, thereby improving the ability of the substrate 10 to suppress high-frequency spurious modes, reducing the loss of signals caused by high-frequency spurious modes, and improving the Q value and performance of the resonator 100 of the present application.

[0086] In one embodiment, on the premise that the first angle φ and the third angle ψ of the Euler angles of the silicon carbide material satisfy the above conditions, the second angle θ of the Euler angles of the silicon carbide material satisfies one of: 0° ≤ θ ≤ 10°, 70° ≤ θ ≤ 120°, 170° ≤ θ ≤ 190°, 250° ≤ θ ≤ 300°, 350° ≤ θ < 360°.

[0087] The limitation of the second angle of the above Euler angles is used to cooperate with the limitation of the first angle and the third angle of the Euler angles of the silicon carbide material to further ensure the energy confinement ability of the silicon carbide material, thereby further improving the ability of the substrate 10 to suppress high-frequency spurious modes, and thus further improving the Q value and performance of the resonator 100 of the present application.

[0088] In one embodiment, the first angle φ of the Euler angles of the silicon carbide material satisfies one of: 80° ≤ φ ≤ 100°, 260° ≤ φ ≤ 280°; the second angle θ of the Euler angles of the silicon carbide material satisfies: 0° ≤ θ < 360°; the third angle ψ of the Euler angles of the silicon carbide material satisfies one of: 80° ≤ ψ ≤ 100°, 260° ≤ ψ ≤ 280°.

[0089] The above limitation of the Euler angles further ensures the energy confinement ability of the silicon carbide material, thereby further enhancing the ability of the substrate 10 to suppress high-frequency spurious modes, and further improving the Q value and performance of the resonator 100 of the present application.

[0090] In one embodiment, the first angle φ satisfies one of: 0° ≤ φ ≤ 10°, 80° ≤ φ ≤ 100°, 170° ≤ φ ≤ 190°, 260° ≤ φ ≤ 280°, 350° ≤ φ < 360°. Among them, limiting the first angle of the Euler angles of the silicon carbide material to the above range can further enhance the ability of the substrate 10 to suppress high-frequency spurious modes, further reduce the loss of signals caused by high-frequency spurious modes, and further improve the Q value and performance of the resonator 100 of the present application.

[0091] In one embodiment, the third angle ψ satisfies one of: 0° ≤ ψ ≤ 10°, 80° ≤ ψ ≤ 100°, 170° ≤ ψ ≤ 190°, 260° ≤ ψ ≤ 280°, 350° ≤ ψ < 360°. By limiting the third angle of the Euler angles of the silicon carbide material of the resonator 100 of the present application to the above range, the ability of the substrate 10 to suppress high-frequency spurious modes can be further enhanced, thereby enabling the resonator 100 of the present application to have good Q value and performance.

[0092] In one embodiment, the first angle φ is one of 0°, 90°, 180°, 270°. Among them, setting the first angle of the Euler angles of the silicon carbide material to the above angles can further enhance the ability of the substrate 10 to suppress high-frequency spurious modes, further reduce the loss of signals caused by high-frequency spurious modes, and further improve the Q value and performance of the resonator 100 of the present application.

[0093] In one embodiment, the second angle θ is one of: 0°, 80°, 90°, 100°, 110°, 180°, 260°, 270°, 280°, 290°. By setting the second angle of the Euler angles of the silicon carbide material of the resonator 100 of the present application to the above angles, the ability of the substrate 10 to suppress high-frequency spurious modes can be further enhanced, thereby enabling the resonator 100 of the present application to have good Q value and performance.

[0094] In one embodiment, the third angle ψ is one of 0°, 90°, 180°, 270°. Among them, setting the third angle of the Euler angles of the silicon carbide material to the above angles can further enhance the ability of the substrate 10 to suppress high-frequency spurious modes, further reduce the loss of signals caused by high-frequency spurious modes, and further improve the Q value and performance of the resonator 100 of the present application.

[0095] Based on the limitations of the above embodiments, the resonator 100 of the present application further limits the ranges of the first angle, the second angle, and the third angle of the silicon carbide material to further improve the energy confinement ability of the silicon carbide material, thereby further improving the suppression effect of the substrate 10 on high-frequency spurious modes, and further improving the Q value and performance of the resonator 100 of the present application.

[0096] Exemplarily, based on the range limitations of the first angle, the second angle, and the third angle in the above embodiments, the resonator 100 of the present application selects silicon carbide materials with different angles as the substrates of the resonator 100 for simulation to obtain a comparison graph of the admittance curves of the resonators corresponding to different silicon carbide angles.

[0097] In one embodiment, when both the second angle θ and the third angle ψ are 0° or 360°, the first angle φ satisfies: one of 0° ≤ φ ≤ 10°, 80° ≤ φ ≤ 100°, 170° ≤ φ ≤ 190°, 260° ≤ φ ≤ 280°, 350° ≤ φ < 360°.

[0098] Specifically, please refer to Figures 7 - 10 , Figures 7 - 10 is the comparison graph of the admittance curves of different resonators corresponding to the case where other parameters are the same and only the first angle φ of the Euler angles of the silicon carbide substrate is different. Among them, Figures 7 - 10 the abscissa of

[0099] For Figures 7 - 10 each of the embodiments and each of the comparative examples shown, the resonator includes a substrate, and a high-frequency spurious mode suppression layer, a piezoelectric substrate, and an interdigital transducer stacked in sequence on the surface of the substrate. Among them, the finger pitch of the electrode fingers of the interdigital transducer is 0.58 μm, the duty cycle is 0.45, the thickness of the electrode fingers is 100 nm, the aperture size is equal to 17.4 μm, the material of the piezoelectric substrate is lithium niobate, the crystal cutting angle of lithium niobate on the YX plane is 15°, the thickness of the piezoelectric substrate is 250 nm, the material of the high-frequency spurious mode suppression layer is polysilicon, the thickness of the high-frequency spurious mode suppression layer is 580 nm, the material of the substrate is silicon carbide, and the thickness of the substrate is 4.5 μm.

[0100] In Figures 7 - 10 the example of Figure 7 there are 12 embodiments, which are Embodiment 1 - Embodiment 12, and 24 comparative examples, which are Comparative Example 1 - Comparative Example 24. Among them, Figure 8 is the comparison graph of the admittance curves corresponding to Embodiment 1 - Embodiment 3 and Comparative Example 1 - Comparative Example 6, Figure 9Comparison diagrams of admittance curves corresponding to Examples 7 - 9 and Comparative Examples 13 - 18 Figure 10 Comparison diagrams of admittance curves corresponding to Examples 10 - 12 and Comparative Examples 19 - 24

[0101] It is worth noting that, in order to facilitate the demonstration of the differences between the admittance curves corresponding to each comparative example and each example at different Euler angles, Figures 7 - 10 the ordinate of the admittance curve was adjusted by equal - ratio magnification.

[0102] In Figures 7 - 10 , the first angle φ of the Euler angle of silicon carbide in each example and each comparative example is different, and the second angle θ and the third angle ψ of the Euler angle of silicon carbide in each example and each comparative example are both 0° or 360°. Specifically, for the silicon carbide material in Example 1, the first angle φ of the Euler angle satisfies: φ = 0°. For the silicon carbide material in Example 2, the first angle φ of the Euler angle satisfies: φ = 10°. For the silicon carbide material in Example 3, the first angle φ of the Euler angle satisfies: φ = 80°. For the silicon carbide material in Example 4, the first angle φ of the Euler angle satisfies: φ = 90°. For the silicon carbide material in Example 5, the first angle φ of the Euler angle satisfies: φ = 100°. For the silicon carbide material in Example 6, the first angle φ of the Euler angle satisfies: φ = 170°. For the silicon carbide material in Example 7, the first angle φ of the Euler angle satisfies: φ = 180°. For the silicon carbide material in Example 8, the first angle φ of the Euler angle satisfies: φ = 190°. For the silicon carbide material in Example 9, the first angle φ of the Euler angle satisfies: φ = 260°. For the silicon carbide material in Example 10, the first angle φ of the Euler angle satisfies: φ = 270°. For the silicon carbide material in Example 11, the first angle φ of the Euler angle satisfies: φ = 280°. For the silicon carbide material in Example 12, the first angle φ of the Euler angle satisfies: φ = 350°.

[0103] For the silicon carbide material of Comparative Example 1, the first angle φ of the Euler angles satisfies: φ = 20°. For the silicon carbide material of Comparative Example 2, the first angle φ of the Euler angles satisfies: φ = 30°. For the silicon carbide material of Comparative Example 3, the first angle φ of the Euler angles satisfies: φ = 40°. For the silicon carbide material of Comparative Example 4, the first angle φ of the Euler angles satisfies: φ = 50°. For the silicon carbide material of Comparative Example 5, the first angle φ of the Euler angles satisfies: φ = 60°. For the silicon carbide material of Comparative Example 6, the first angle φ of the Euler angles satisfies: φ = 70°. For the silicon carbide material of Comparative Example 7, the first angle φ of the Euler angles satisfies: φ = 110°. For the silicon carbide material of Comparative Example 8, the first angle φ of the Euler angles satisfies: φ = 120°. For the silicon carbide material of Comparative Example 9, the first angle φ of the Euler angles satisfies: φ = 130°. For the silicon carbide material of Comparative Example 10, the first angle φ of the Euler angles satisfies: φ = 140°. For the silicon carbide material of Comparative Example 11, the first angle φ of the Euler angles satisfies: φ = 150°. For the silicon carbide material of Comparative Example 12, the first angle φ of the Euler angles satisfies: φ = 160°. For the silicon carbide material of Comparative Example 13, the first angle φ of the Euler angles satisfies: φ = 200°. For the silicon carbide material of Comparative Example 14, the first angle φ of the Euler angles satisfies: φ = 210°. For the silicon carbide material of Comparative Example 15, the first angle φ of the Euler angles satisfies: φ = 220°. For the silicon carbide material of Comparative Example 16, the first angle φ of the Euler angles satisfies: φ = 230°. For the silicon carbide material of Comparative Example 17, the first angle φ of the Euler angles satisfies: φ = 240°. For the silicon carbide material of Comparative Example 18, the first angle φ of the Euler angles satisfies: φ = 250°. For the silicon carbide material of Comparative Example 19, the first angle φ of the Euler angles satisfies: φ = 290°. For the silicon carbide material of Comparative Example 20, the first angle φ of the Euler angles satisfies: φ = 300°. For the silicon carbide material of Comparative Example 21, the first angle φ of the Euler angles satisfies: φ = 310°. For the silicon carbide material of Comparative Example 22, the first angle φ of the Euler angles satisfies: φ = 320°. For the silicon carbide material of Comparative Example 23, the first angle φ of the Euler angles satisfies: φ = 330°. For the silicon carbide material of Comparative Example 24, the first angle φ of the Euler angles satisfies: φ = 340°.

[0104] In the comparison diagrams of the admittance curves respectively simulated for the above 12 embodiments and 24 comparative examples, the area circled by the dashed box is the fluctuation area of the admittance curve.

[0105] For the admittance curve, the fluctuations in the admittance curve can characterize the influence of spurious modes on the signal response. Specifically, when the resonator has a weaker suppression effect on spurious modes, the fluctuations in the admittance curve are greater.

[0106] In Figures 7 - 10In each of the legends, within the frequency range between the resonance frequency and the anti-resonance frequency, the admittance curves corresponding to Embodiments 1-12 of the present application have no fluctuations, while the admittance curves corresponding to Comparative Examples 1-24 have fluctuations. That is, Embodiments 1-12 of the present application eliminate the spurious modes within this frequency range. It can be seen that on the premise that other parameters are the same, setting the first angle of the Euler angle of the silicon carbide substrate to satisfy one of 0°≤φ≤10°, 80°≤φ≤100°, 170°≤φ≤190°, 260°≤φ≤280°, 350°≤φ<360° has a good inhibitory effect on the spurious modes within the frequency range between the resonance frequency and the anti-resonance frequency.

[0107] In another embodiment, when both the first angle φ and the third angle ψ are 0° or 360°, the second angle θ satisfies one of 0°≤θ≤10°, 70°≤θ≤120°, 170°≤θ≤190°, 250°≤θ≤300°, 350°≤θ<360°.

[0108] Specifically, please refer to Figures 11 - 14 , Figures 11 - 14 is a comparison diagram of the admittance curves of different resonators corresponding to the cases where other parameters are the same and only the second angle θ of the Euler angle of the silicon carbide substrate is different. Among them, Figures 11 - 14 the abscissa is frequency, the unit is GHz, and the ordinate is the input admittance of the first port, that is, Y(1,1), and its unit is dB.

[0109] For Figures 11 - 14 each of the embodiments and comparative examples shown, the resonator includes a substrate, and a high-frequency spurious mode suppression layer, a piezoelectric substrate, and an interdigital transducer stacked in sequence on the surface of the substrate. Among them, the finger pitch of the electrode fingers of the interdigital transducer is 0.58 μm, the duty cycle is 0.45, the thickness of the electrode fingers is 100 nm, the aperture size is equal to 17.4 μm, the material of the piezoelectric substrate is lithium niobate, the crystal cutting angle of lithium niobate on the YX plane is 15°, the thickness of the piezoelectric substrate is 250 nm, the material of the high-frequency spurious mode suppression layer is polysilicon, the thickness of the high-frequency spurious mode suppression layer is 580 nm, the material of the substrate is silicon carbide, and the thickness of the substrate is 4.5 μm.

[0110] In Figures 11 - 14 the example, the number of embodiments is 18, which are Embodiments 13-30 respectively, and the number of comparative examples is 18, which are Comparative Examples 25-42 respectively. Among them, Figure 11 is a comparison diagram of the admittance curves corresponding to Embodiments 13-16 and Comparative Examples 25-29, Figure 12 is a comparison diagram of the admittance curves corresponding to Embodiments 17-21 and Comparative Examples 30-33,Figure 13 It is a comparison chart of admittance curves corresponding to Examples 22 - 25 and Comparative Examples 34 - 38. Figure 14 It is a comparison chart of admittance curves corresponding to Examples 26 - 30 and Comparative Examples 39 - 42.

[0111] It is worth noting that, in order to facilitate the demonstration of the differences between the admittance curves corresponding to each comparative example and each example at different Euler angles, Figures 11 - 14 the ordinate of the admittance curve has been adjusted by equal - ratio magnification.

[0112] In Figures 11 - 14 the example, the second angle θ of the Euler angle of silicon carbide in each example and each comparative example is different, and the first angle φ and the third angle ψ of the Euler angle of silicon carbide in each example and each comparative example are both 0° or 360°. Specifically, for the silicon carbide material in Example 13, the second angle θ of the Euler angle satisfies: θ = 0° (or 360°). For the silicon carbide material in Example 14, the second angle θ of the Euler angle satisfies: θ = 10°. For the silicon carbide material in Example 15, the second angle θ of the Euler angle satisfies: θ = 70°. For the silicon carbide material in Example 16, the second angle θ of the Euler angle satisfies: θ = 80°. For the silicon carbide material in Example 17, the second angle θ of the Euler angle satisfies: θ = 90°. For the silicon carbide material in Example 18, the second angle θ of the Euler angle satisfies: θ = 100°. For the silicon carbide material in Example 19, the second angle θ of the Euler angle satisfies: θ = 110°. For the silicon carbide material in Example 20, the second angle θ of the Euler angle satisfies: θ = 120°. For the silicon carbide material in Example 21, the second angle θ of the Euler angle satisfies: θ = 170°. For the silicon carbide material in Example 22, the second angle θ of the Euler angle satisfies: θ = 180°. For the silicon carbide material in Example 23, the second angle θ of the Euler angle satisfies: θ = 190°. For the silicon carbide material in Example 24, the second angle θ of the Euler angle satisfies: θ = 250°. For the silicon carbide material in Example 25, the second angle θ of the Euler angle satisfies: θ = 260°. For the silicon carbide material in Example 26, the second angle θ of the Euler angle satisfies: θ = 270°. For the silicon carbide material in Example 27, the second angle θ of the Euler angle satisfies: θ = 280°. For the silicon carbide material in Example 28, the second angle θ of the Euler angle satisfies: θ = 290°. For the silicon carbide material in Example 29, the second angle θ of the Euler angle satisfies: θ = 300°. For the silicon carbide material in Example 30, the second angle θ of the Euler angle satisfies: θ = 350°.

[0113] The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 25 satisfies: θ = 20°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 26 satisfies: θ = 30°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 27 satisfies: θ = 40°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 28 satisfies: θ = 50°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 29 satisfies: θ = 60°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 30 satisfies: θ = 130°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 31 satisfies: θ = 140°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 32 satisfies: θ = 150°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 33 satisfies: θ = 160°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 34 satisfies: θ = 200°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 35 satisfies: θ = 210°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 36 satisfies: θ = 220°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 37 satisfies: θ = 230°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 38 satisfies: θ = 240°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 39 satisfies: θ = 310°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 40 satisfies: θ = 320°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 41 satisfies: θ = 330°. The second angle θ of the Euler angles of the silicon carbide material of Comparative Example 42 satisfies: θ = 340°.

[0114] In the comparison diagrams of the admittance curves respectively simulated from the above 18 examples and 18 comparative examples, the area circled by the dashed box is the fluctuation area of the admittance curve.

[0115] For the admittance curve, the fluctuations in the admittance curve can characterize the influence of the spurious modes on the signal response. Specifically, when the resonator has a weaker suppression effect on the spurious modes, the fluctuations in the admittance curve are greater.

[0116] According to Figures 11 - 14As can be seen from each of the legends, in the frequency range greater than the anti-resonant frequency, there are obvious fluctuations in the admittance curves corresponding to Comparative Examples 25 to 42, while there are no fluctuations or the degree of fluctuations is much smaller than that of Comparative Examples 25 to 42 in the admittance curves corresponding to Embodiments 13 to 30 of the present application. That is, Embodiments 13 to 30 of the present application have a significant inhibitory effect on the spurious modes in this frequency range, and among them, in Embodiments 13, 16 to 20, 22, and 25, the spurious modes in this frequency range are even eliminated. It can be seen that on the premise that other parameters are the same, setting the second angle of the Euler angle of the silicon carbide substrate to satisfy one of 0°≤θ≤10°, 70°≤θ≤120°, 170°≤θ≤190°, 250°≤θ≤300°, and 350°≤θ<360° has a good inhibitory effect on the spurious modes in the frequency range between the resonant frequency and the anti-resonant frequency. Further, on the premise that other parameters are the same, setting the second angle of the Euler angle of the silicon carbide substrate to satisfy one of 0°≤θ≤10°, 80°≤θ≤110°, θ = 180°, 260°≤θ≤290°, and θ = 360° can eliminate the spurious modes in the frequency range greater than the anti-resonant frequency.

[0117] In another embodiment, when both the first angle φ and the second angle θ are 0° or 360°, the third angle ψ satisfies one of 0°≤ψ≤10°, 80°≤ψ≤100°, 170°≤ψ≤190°, 260°≤ψ≤280°, and 350°≤ψ<360°.

[0118] Specifically, Figures 15 - 18 FIG. is a comparison diagram of the admittance curves of different resonators corresponding to the cases where other parameters are the same and only the third angle ψ of the Euler angle of the silicon carbide substrate is different. Among them, Figures 15 - 18 the abscissa is frequency, with the unit of GHz, and the ordinate is the input admittance of the first port, that is, Y(1,1), and its unit is dB.

[0119] For Figures 15 - 18 each of the embodiments and each of the comparative examples in, the resonator includes a substrate, and a high-frequency spurious mode suppression layer, a piezoelectric substrate, and an interdigital transducer sequentially stacked on the surface of the substrate. Among them, the finger pitch of the electrode fingers of the interdigital transducer is 0.58 μm, the duty cycle is 0.45, the thickness of the electrode fingers is 100 nm, the aperture size is equal to 17.4 μm, the material of the piezoelectric substrate is lithium niobate, the crystal cutting angle of lithium niobate on the YX plane is 15°, the thickness of the piezoelectric substrate is 250 nm, the material of the high-frequency spurious mode suppression layer is polysilicon, the thickness of the high-frequency spurious mode suppression layer is 580 nm, the material of the substrate is silicon carbide, and the thickness of the substrate is 4.5 μm.

[0120] In Figures 15 - 18In the example, the number of embodiments is 12, namely Embodiment 31 - Embodiment 42, and the number of comparative examples is 24, namely Comparative Example 43 - Comparative Example 66. Among them, Figure 15 is the comparison chart of admittance curves corresponding to Embodiment 31 - Embodiment 33 and Comparative Example 43 - Comparative Example 48, Figure 16 is the comparison chart of admittance curves corresponding to Embodiment 34 - Embodiment 36 and Comparative Example 49 - Comparative Example 54, Figure 17 is the comparison chart of admittance curves corresponding to Embodiment 37 - Embodiment 39 and Comparative Example 55 - Comparative Example 60, Figure 18 is the comparison chart of admittance curves corresponding to Embodiment 40 - Embodiment 42 and Comparative Example 61 - Comparative Example 66.

[0121] It is worth noting that in order to facilitate the demonstration of the differences between the admittance curves corresponding to each comparative example and each embodiment at different Euler angles, Figures 15 - 18 the ordinate of the admittance curve is adjusted by equal proportion amplification.

[0122] In Figures 15 - 18 the example, the third angle ψ of the Euler angle of silicon carbide in each embodiment and each comparative example is different, and the first angle φ and the second angle θ of the Euler angle of silicon carbide in each embodiment and each comparative example are both 0° or 360°. Specifically, the third angle ψ of the Euler angle of the silicon carbide material in Embodiment 31 satisfies: ψ = 0°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 32 satisfies: ψ = 10°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 33 satisfies: ψ = 80°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 34 satisfies: ψ = 90°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 35 satisfies: ψ = 100°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 36 satisfies: ψ = 170°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 37 satisfies: ψ = 180°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 38 satisfies: ψ = 190°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 39 satisfies: ψ = 260°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 40 satisfies: ψ = 270°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 41 satisfies: ψ = 280°. The third angle ψ of the Euler angle of the silicon carbide material in Embodiment 42 satisfies: ψ = 350°.

[0123] The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 43 satisfies: ψ = 20°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 44 satisfies: ψ = 30°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 45 satisfies: ψ = 40°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 46 satisfies: ψ = 50°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 47 satisfies: ψ = 60°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 48 satisfies: ψ = 70°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 49 satisfies: ψ = 110°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 50 satisfies: ψ = 120°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 51 satisfies: ψ = 130°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 52 satisfies: ψ = 140°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 53 satisfies: ψ = 150°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 54 satisfies: ψ = 160°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 55 satisfies: ψ = 200°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 56 satisfies: ψ = 210°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 57 satisfies: ψ = 220°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 58 satisfies: ψ = 230°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 59 satisfies: ψ = 240°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 60 satisfies: ψ = 250°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 61 satisfies: ψ = 290°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 62 satisfies: ψ = 300°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 63 satisfies: ψ = 310°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 64 satisfies: ψ = 320°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 65 satisfies: ψ = 330°. The third angle ψ of the Euler angles of the silicon carbide material of Comparative Example 66 satisfies: ψ = 340°.

[0124] In the comparison diagrams of the admittance curves respectively simulated in the above 12 embodiments and 24 comparative examples, the area circled by the dashed box is the fluctuation area of the admittance curve.

[0125] For the admittance curve, the fluctuations in the admittance curve can characterize the influence of the spurious modes on the signal response. Specifically, when the resonator has a weaker suppression effect on the spurious modes, the fluctuations in the admittance curve are greater.

[0126] In Figures 15 - 18In each of the illustrated examples, within the frequency range between the resonant frequency and the anti-resonant frequency, there are obvious fluctuations in the admittance curves corresponding to Comparative Examples 43 to 66, while there are no fluctuations in the admittance curves corresponding to Examples 31 to 37, Example 39, Example 40, and Example 42 of the present application. The degree of fluctuation in the admittance curves corresponding to Example 38 and Example 41 is much smaller than that of Comparative Examples 43 to 66. That is, Examples 31 to 42 have a significant inhibitory effect on the spurious modes within this frequency range, and among them, Examples 31 to 37, Example 39, Example 40, and Example 42 eliminate the spurious modes within this frequency range. It can be seen that on the premise that other parameters are the same, setting the third angle of the Euler angle of the silicon carbide substrate to satisfy one of 0°≤ψ≤10°, 80°≤ψ≤100°, 170°≤ψ≤190°, 260°≤ψ≤280°, and 350°≤ψ<360° has a good inhibitory effect on the spurious modes within the frequency range between the resonant frequency and the anti-resonant frequency. Further, on the premise that other parameters are the same, setting the third angle of the Euler angle of the silicon carbide substrate to satisfy one of 0°≤ψ≤10°, 80°≤ψ≤100°, 170°≤ψ≤180°, 260°≤ψ≤270°, and 350°≤ψ<360° can eliminate the spurious modes within the frequency range between the resonant frequency and the anti-resonant frequency.

[0127] In another embodiment, when both the first angle φ and the third angle ψ are 90° or 270°, the second angle θ satisfies 0°≤θ<360°.

[0128] Specifically, Figures 19 - 22 is a comparison diagram of the admittance curves of different resonators under the condition that other parameters are the same and only the second angle θ of the Euler angle of the silicon carbide substrate is different. Among them, Figures 19 - 22 the abscissa is frequency, with the unit of GHz, and the ordinate is the input admittance of the first port, that is, Y(1,1), and its unit is dB.

[0129] For Figures 19 - 22 each of the illustrated examples and each of the comparative examples, the resonator includes a substrate, and a high-frequency spurious mode suppression layer, a piezoelectric substrate, and interdigital transducers sequentially stacked on the surface of the substrate. Among them, the finger pitch of the electrode fingers of the interdigital transducers is 0.58 μm, the duty cycle is 0.45, the thickness of the electrode fingers is 100 nm, the aperture size is equal to 17.4 μm, the material of the piezoelectric substrate is lithium niobate, the crystal cutting angle of lithium niobate on the YX plane is 15°, the thickness of the piezoelectric substrate is 250 nm, the material of the high-frequency spurious mode suppression layer is polysilicon, the thickness of the high-frequency spurious mode suppression layer is 580 nm, the material of the substrate is silicon carbide, and the thickness of the substrate is 4.5 μm.

[0130] InFigures 19 - 22 In the example of Figure 19 Figure 361 is a comparative graph of admittance curves corresponding to Examples 43 - 51. Figure 20 Figure 362 is a comparative graph of admittance curves corresponding to Examples 52 - 60. Figure 21 Figure 363 is a comparative graph of admittance curves corresponding to Examples 61 - 69. Figure 22 Figure 364 is a comparative graph of admittance curves corresponding to Examples 70 - 78.

[0131] It is worth noting that, in order to facilitate showing the differences between the admittance curves corresponding to each comparative example and each example at different Euler angles, Figures 19 - 22 the ordinate of the admittance curve is adjusted by equal - ratio magnification.

[0132] In Figures 19 - 22 the example of

[0133] For the admittance curve, the fluctuations in the admittance curve can characterize the influence of spurious modes on the signal response. Specifically, when the resonator has a weaker suppression effect on spurious modes, the fluctuations in the admittance curve are greater.

[0134] And in Figures 19 - 22 each legend of

[0135] In summary, Examples 1 - 78 have a good effect on suppressing the spurious modes between the resonant frequency and the anti - resonant frequency. This is because the Euler angles of the silicon carbide materials selected in Examples 1 - 78 satisfy the selection rules of the embodiments of the present application. Correspondingly, the effect of the silicon carbide material on suppressing high - frequency spurious modes is also improved, thereby enhancing the Q - value and performance of the resonator 100 of the present application.

[0136] Specifically, based on the above Figures 7 - 10 shown legend, it can be seen that Examples 1, 4, 7, and 10 have the best effect on suppressing the spurious modes between the resonant frequency and the anti - resonant frequency. Correspondingly, the first angle of the Euler angle of the silicon carbide material of the substrate 10 of the resonator 100 of the present application is selected as one of 0°, 90°, 180°, and 270°, which can significantly improve the effect of the resonator 100 of the present application on suppressing the spurious modes in the frequency range between the resonant frequency and the anti - resonant frequency, and even eliminate the spurious modes in this frequency range.

[0137] Based on the above Figures 11 - 14 shown legend, it can be seen that Examples 13, 16, 17, 18, 19, 22, 25, 26, 27, and 28 have the best effect on suppressing the spurious modes above the anti - resonant frequency. Correspondingly, the second angle of the Euler angle of the silicon carbide material of the substrate 10 of the resonator 100 of the present application is selected as one of 0°, 80°, 90°, 100°, 110°, 180°, 260°, 270°, 280°, and 290°, which can improve the effect of the resonator 100 of the present application on suppressing the spurious modes in the frequency range above the anti - resonant frequency, and even eliminate the spurious modes in this frequency range.

[0138] Based on the above Figures 15 - 18 shown legend, it can be seen that Examples 31, 34, 37, and 40 have the best effect on suppressing the spurious modes between the resonant frequency and the anti - resonant frequency. Correspondingly, the third angle of the Euler angle of the silicon carbide material of the substrate 10 of the resonator 100 of the present application is selected as one of 0°, 90°, 180°, and 270°, which can improve the effect of the resonator 100 of the present application on suppressing the spurious modes between the resonant frequency and the anti - resonant frequency. Thereby, the Q - value and performance of the resonator 100 of the present application are improved.

[0139] It can be understood that since in the measurement of angles, a full angle is 360°, and 360° coincides with 0°, therefore, in each embodiment of the present application, the angle 0° is also equivalent to the angle 360°. In addition, from Figures 7 - 22It can be seen that, on the premise that other parameters of the resonator 100 remain the same, for the three angles in the Euler angles of silicon carbide, when any two angles remain unchanged and only one angle is adjusted, the influence of the adjustment of this angle on the admittance curve of the resonator 100 is approximately periodic with a period of 180°. Therefore, after determining any one of the Euler angles of silicon carbide according to the above embodiments, this angle can also be ±180° on the determined value.

[0140] In one embodiment, when the second angle θ is 0° or 360°, the first angle φ satisfies: 86° ≤ φ ≤ 94°; the third angle ψ satisfies: 86° ≤ ψ ≤ 94°.

[0141] Specifically, please refer to Figure 23 , Figure 23 is a comparison diagram of the admittance curves of corresponding different resonators in the case where other parameters are the same and only the Euler angles of silicon carbide are different. Among them, Figure 23 the abscissa is the frequency, the unit is GHz, and the ordinate is the input admittance of the first port, that is, Y(1,1), and its unit is dB.

[0142] For Figure 23 each of the embodiments and each of the comparative examples shown, the resonator includes a substrate, and a high-frequency spurious mode suppression layer, a piezoelectric substrate, and interdigital transducers sequentially stacked on the surface of the substrate. Among them, the finger pitch of the electrode fingers of the interdigital transducers is 0.58 μm, the duty cycle is 0.45, the thickness of the electrode fingers is 100 nm, the aperture size is equal to 17.4 μm, the material of the piezoelectric substrate is lithium niobate, the crystal cutting angle of lithium niobate on the YX plane is 15°, the thickness of the piezoelectric substrate is 250 nm, the material of the high-frequency spurious mode suppression layer is polysilicon, the thickness of the high-frequency spurious mode suppression layer is 580 nm, the material of the substrate is silicon carbide, and the thickness of the substrate is 4.5 μm.

[0143] In Figure 23 the legend shown, the number of embodiments is 5, which are Embodiment 79 - Embodiment 83 respectively, and the number of comparative examples is 2, which are Comparative Example 67 and Comparative Example 68 respectively. Among them, Figure 23 is a comparison diagram of the admittance curves corresponding to Embodiment 79 - Embodiment 83, Comparative Example 67 and Comparative Example 68.

[0144] It is worth noting that, in order to facilitate showing the differences between the admittance curve diagrams corresponding to each comparative example and each embodiment under different Euler angles, Figure 23 the ordinate of the admittance curve is adjusted by equal proportion amplification.

[0145] In Figure 23In the illustrated legend, the first angle φ and the third angle ψ of the Euler angles of silicon carbide in each embodiment and each comparative example are different, and the second angle θ of the Euler angles of silicon carbide in each embodiment and each comparative example is 0° or 360°. Specifically, for the silicon carbide material of Example 79, the first angle φ and the third angle ψ of the Euler angles respectively satisfy: φ = 86°, ψ = 86°. For the silicon carbide material of Example 80, the first angle φ and the third angle ψ of the Euler angles respectively satisfy: φ = 88°, ψ = 88°. For the silicon carbide material of Example 81, the first angle φ and the third angle ψ of the Euler angles respectively satisfy: φ = 90°, ψ = 90°. For the silicon carbide material of Example 82, the first angle φ and the third angle ψ of the Euler angles respectively satisfy: φ = 92°, ψ = 92°. For the silicon carbide material of Example 83, the first angle φ and the third angle ψ of the Euler angles respectively satisfy: φ = 94°, ψ = 94°.

[0146] For the silicon carbide material of Comparative Example 67, the first angle φ and the third angle ψ of the Euler angles respectively satisfy: φ = 84°, ψ = 84°. For the silicon carbide material of Comparative Example 68, the first angle φ and the third angle ψ of the Euler angles respectively satisfy: φ = 96°, ψ = 96°.

[0147] In the comparison diagrams of the admittance curves respectively simulated for the above 5 embodiments and 2 comparative examples, the area circled by the dashed box is the fluctuation area of the admittance curve.

[0148] For the admittance curve, the fluctuations in the admittance curve can characterize the influence of spurious modes on the signal response. Specifically, when the resonator has a weaker suppression effect on spurious modes, the fluctuations in the admittance curve are greater.

[0149] In Figure 23 each of the legends, in the frequency range from the resonant frequency to the anti-resonant frequency, the admittance curves corresponding to Examples 80 - 82 of the present application have no fluctuations, while the admittance curves corresponding to Example 79, Example 83, Comparative Example 67, and Comparative Example 68 all have fluctuations, but the fluctuation amplitudes of Example 79 and Example 83 are significantly smaller than those of Comparative Example 67 and Comparative Example 68. That is, Examples 79 - 83 of the present application can reduce spurious modes in this frequency range. It can be seen that on the premise that other parameters are the same and the second angle θ of the Euler angles of the silicon carbide substrate is 0° or 360°, setting the first angle and the third angle of the Euler angles of the silicon carbide substrate to satisfy: 86° ≤ φ ≤ 94° and 86° ≤ ψ ≤ 94° has a good suppression effect on spurious modes in the frequency range between the resonant frequency and the anti-resonant frequency.

[0150] On the other hand, from Figure 23It can be seen that although the spurious mode levels of Comparative Example 67 and Comparative Example 68 are higher than those of Examples 80 - 82, the fluctuation amplitude of their admittance curves is significantly smaller than that of the comparative examples in other previous figures. It can be seen that when determining the optimal values of the first angle, the second angle, and the third angle of the Euler angles of the silicon carbide substrate, the first angle, the second angle, and the third angle can be within the range of the optimal value ±6°, and at this time, the resonator still has a good spurious mode suppression effect.

[0151] Furthermore, the first angle, the second angle, and the third angle can be within the range of the optimal value ±4°, and at this time, the resonator has a significant spurious mode suppression effect. Among them, the optimal values of the first angle, the second angle, and the third angle refer to the values of the first angle, the second angle, and the third angle in the Euler angles of silicon carbide when the resonator can completely eliminate spurious modes within a specific frequency range. For example, the optimal value of the first angle can be one of 0°, 90°, 180°, 270°; the optimal value of the second angle can be one of 0°, 80°, 90°, 100°, 110°, 180°, 260°, 270°, 280°, 290°; the optimal value of the third angle can be one of 0°, 90°, 180°, 270°.

[0152] Please refer to Figure 24 Another schematic structural diagram of the resonator 100 provided in an embodiment of the present application shown in

[0153] As Figure 24 shown, the resonator 100 of the present application further includes a high-frequency spurious mode suppression layer 40. Along the thickness direction of the substrate 10, the high-frequency spurious mode suppression layer 40 is located between the piezoelectric substrate 20 and the substrate 10. In the embodiment of the present application, the high-frequency spurious mode suppression layer 40 can isolate, attenuate, or change the propagation path of spurious modes to avoid the deterioration of high-frequency performance caused by high-frequency electron spillover. That is, the high-frequency spurious mode suppression layer 40 is used to further suppress high-frequency spurious modes to further improve the Q value and performance of the resonator 100 of the present application.

[0154] In one embodiment, the material of the piezoelectric substrate 20 is lithium niobate, and the material of the high-frequency spurious mode suppression layer 40 includes lithium niobate and silicon carbide.

[0155] In one embodiment, as Figure 24 shown, the surface roughness of the substrate 10 facing the piezoelectric substrate 20 is greater than the surface roughness of the piezoelectric substrate 20 facing away from the substrate 10, and the high-frequency spurious mode suppression layer 40 is the interface layer between the substrate 10 and the piezoelectric substrate 20. That is, the surface of the substrate 10 facing the piezoelectric substrate 20 is uneven.

[0156] It can be understood that during the preparation of the resonator 100 of the present application, it is necessary to grow a lithium niobate material on the surface of the substrate 10 to cooperate in forming the piezoelectric substrate 20. Among them, after the resonator 100 of the present embodiment is prepared, due to the uneven interface between the substrate 10 and the piezoelectric substrate 20, there are partial regions in the thickness direction of the substrate 10 that include both lithium niobate material and silicon carbide material. At this time, the region with both lithium niobate and silicon carbide is formed into the high-frequency spurious mode suppression layer of the resonator 100 of the present application.

[0157] In one embodiment, the high-frequency spurious mode suppression layer 40 is prepared from a non-piezoelectric material. In the resonator 100 of the present embodiment, the material of the high-frequency spurious mode suppression layer 40 is set as a non-piezoelectric material, which can avoid the acousto-electric coupling phenomenon generated by the cooperation of the electrical signal generated when the interdigital transducer 30 works and the high-frequency spurious mode suppression layer 40. Thus, while ensuring the suppression of high-frequency spurious modes by the high-frequency spurious mode suppression layer 40, the signal quality and stability of the resonator 100 of the present application are ensured, and the Q value and performance of the resonator 100 of the present application are ensured.

[0158] In one embodiment, the material used for the high-frequency spurious mode suppression layer 40 includes at least one of silicon oxide and polysilicon.

[0159] Please refer to Figure 25 Another structural schematic diagram of the resonator 100 provided in one embodiment of the present application shown in the figure.

[0160] As Figure 25 shown, along the thickness direction of the substrate 10, the high-frequency spurious mode suppression layer 40 is located between the piezoelectric substrate 20 and the substrate 10. During the preparation process of the resonator 100 of the present application, it is necessary to grow a silicon oxide or polysilicon material on the surface of the substrate 10 to form the high-frequency spurious mode suppression layer 40, and then grow a lithium niobate material on the surface of the high-frequency spurious mode suppression layer 40 to form the piezoelectric substrate 20. At this time, the material of the high-frequency spurious mode suppression layer 40 is silicon oxide or polysilicon, thereby forming a silicon oxide layer or a polysilicon layer.

[0161] Please refer to Figure 26 Another structural schematic diagram of the resonator 100 provided in one embodiment of the present application shown in the figure.

[0162] As Figure 26 shown, the high-frequency spurious mode suppression layer 40 includes a plurality of stacked sub-layers 41, and the materials of any two adjacent sub-layers 41 are different. In Figure 26 the schematic diagram shown, the number of sub-layers 41 is two. By providing a plurality of sub-layers 41 and making the materials of two adjacent sub-layers 41 different, the high-frequency spurious mode suppression layer 40 can improve the suppression effect on high-frequency spurious modes based on the characteristics of different materials, thereby further improving the Q value and performance of the resonator 100 of the present application.

[0163] In one embodiment, the material of one sub-layer 41 out of any two adjacent sub-layers 41 is silicon oxide, and the material of the other sub-layer 41 is polysilicon. Specifically, as Figure 26 shown, the high-frequency spurious mode suppression layer 40 includes a first sub-layer 411 and a second sub-layer 412. Along the thickness direction of the substrate 10, the first sub-layer 411 is located between the second sub-layer 412 and the substrate 10.

[0164] Among them, as an example, the first sub-layer 411 is prepared with silicon oxide material, and the second sub-layer 412 is prepared with polysilicon material. During the preparation process of the resonator 100 in this application, first, a silicon oxide material is grown on the surface of the substrate 10 to form the first sub-layer 411, then a polysilicon material is grown on the surface of the first sub-layer 411 to form the second sub-layer 412, and finally, a lithium niobate material is grown on the surface of the second sub-layer 412 to form the piezoelectric substrate 20.

[0165] It can be understood that in other examples, the materials of the first sub-layer 411 and the second sub-layer 412 can also be interchanged, that is, the first sub-layer 411 is prepared with polysilicon material, and the second sub-layer 412 is prepared with silicon oxide material.

[0166] It can be understood that in other embodiments, the number of sub-layers 41 and the materials of each sub-layer 41 can be matched and set according to actual usage requirements, and this application does not make special restrictions on this.

[0167] In one embodiment, the material of the high-frequency spurious mode suppression layer 40 is silicon carbide doped with polysilicon. That is, during the preparation process of the resonator 100 in this application, polysilicon material is doped on the surface of the silicon carbide substrate 10 by ion implantation to form the high-frequency spurious mode suppression layer 40.

[0168] In one embodiment, along the thickness direction of the substrate 10, the maximum thickness dimension of the high-frequency spurious mode suppression layer 40 is greater than or equal to 1 nm, so as to reduce the manufacturing difficulty of the high-frequency spurious mode suppression layer 40 in the resonator 100 of this application and facilitate the preparation of the resonator 100 of this application. It is worth noting that when the high-frequency spurious mode suppression layer 40 of this application adopts Figure 24 the preparation method shown in the legend, the maximum thickness dimension of the high-frequency spurious mode suppression layer 40 refers to the distance between the highest point and the lowest point in the uneven surface of the substrate 10 facing the piezoelectric substrate 20. That is, the maximum thickness dimension of the high-frequency spurious mode suppression layer 40 refers to Figure 24 the thickness dimension of the area described by the dotted line in

[0169] In one embodiment, the material of the piezoelectric substrate 20 is lithium niobate, and the crystal cutting angle of the lithium niobate on the YX plane is greater than or equal to 5° and less than or equal to 48°. The resonator 100 of the present application improves the electromechanical coupling coefficient of the piezoelectric substrate 20 by restricting the crystal cutting angle of the piezoelectric substrate 20 on the YX plane, thereby improving the acousto-electric conversion efficiency of the piezoelectric substrate 20 and enhancing the sensitivity and response speed of the resonator 100 of the present application.

[0170] In one embodiment, the crystal cutting angle is greater than or equal to 5° and less than or equal to 20°. This embodiment further defines the crystal cutting angle of the piezoelectric substrate 20 on the YX plane, thereby further improving the electromechanical coupling coefficient of the piezoelectric substrate 20 and further enhancing the sensitivity and response speed of the resonator 100 of the present application.

[0171] In one embodiment, the thickness of the piezoelectric substrate 20 is greater than or equal to 200 nm and less than or equal to 300 nm. Among them, when the thickness of the piezoelectric substrate 20 is too thick, the stress distribution in the piezoelectric substrate 20 is uneven, which may cause ineffective transmission of the electric field and surface acoustic waves, affecting the electromechanical coupling effect of the piezoelectric substrate 20. When the thickness of the piezoelectric substrate 20 is too thin, the piezoelectric substrate 20 cannot effectively transmit the surface acoustic wave, resulting in a decrease in the energy conversion efficiency and a decrease in the electromechanical coupling coefficient. Correspondingly, when the piezoelectric substrate 20 is too thick or too thin, the electromechanical coupling coefficient will decrease. Setting the thickness of the piezoelectric substrate 20 between 200 nm and 300 nm is beneficial to ensuring the electromechanical coupling coefficient of the piezoelectric substrate 20, thereby enhancing the sensitivity and response speed of the resonator 100 of the present application.

[0172] On the other hand, the thickness of the piezoelectric substrate 20 also affects the generation of spurious modes. The resonator 100 of the present application restricts the thickness range of the piezoelectric substrate 20 to avoid exciting spurious modes due to the thickness of the piezoelectric substrate 20 being too thick or too thin. Thereby reducing the intensity of the spurious modes generated when the resonator 100 of the present application operates, which is beneficial to enhancing the Q value and performance of the resonator 100 of the present application.

[0173] In one embodiment, the thickness of the piezoelectric substrate 20 is greater than or equal to 240 nm and less than or equal to 260 nm. This embodiment further defines the thickness range of the piezoelectric substrate 20 to further improve the electromechanical coupling coefficient of the piezoelectric substrate 20 and enhance the sensitivity of the resonator 100 of the present application. On the other hand, the Q value and performance of the resonator 100 of the present application are also improved.

[0174] Based on the limitations of the above embodiments, please refer to Figures 27 - 30 , Figures 27 - 30 is the admittance curve diagram obtained by simulating resonators with piezoelectric substrates of different thicknesses. Among them, Figures 27 - 30The abscissa is the frequency, with the unit of GHz, and the ordinate is the input admittance of the first port, that is, Y(1,1), with the unit of dB.

[0175] For Figures 27 - 30 In each of the embodiments and comparative examples, the resonator includes a substrate, and a high-frequency spurious mode suppression layer, a piezoelectric substrate, and an interdigital transducer that are sequentially stacked on the surface of the substrate. Among them, the finger pitch of the electrode fingers of the interdigital transducer is 0.58 μm, the duty cycle is 0.45, the thickness of the electrode fingers is 100 nm, the aperture size is equal to 17.4 μm, the material of the piezoelectric substrate is lithium niobate, the crystal cutting angle of lithium niobate in the YX plane is 15°, the material of the high-frequency spurious mode suppression layer is polysilicon, the thickness of the high-frequency spurious mode suppression layer is 580 nm, the material of the substrate is silicon carbide, the thickness of the substrate is 4.5 μm, and the Euler angles of each substrate are the same.

[0176] In Figures 27 - 30 In the legend, the number of embodiments is three, namely Embodiment 84 - Embodiment 86, and the number of comparative examples is one, which is Comparative Example 69. Among them, Figure 27 is the admittance curve diagram corresponding to Embodiment 84, Figure 28 is the admittance curve diagram corresponding to Embodiment 85, Figure 29 is the admittance curve diagram corresponding to Embodiment 86, Figure 30 is the admittance curve diagram corresponding to Comparative Example 69. The thicknesses of the piezoelectric substrates of each embodiment and comparative example are different. Specifically, the thickness of the piezoelectric substrate 20 of Embodiment 84 is 200 nm. The thickness of the piezoelectric substrate 20 of Embodiment 85 is 250 nm. The thickness of the piezoelectric substrate 20 of Embodiment 86 is 300 nm. The thickness of the piezoelectric substrate of Comparative Example 69 is 350 nm.

[0177] In the admittance curve diagrams respectively simulated from the above three embodiments and one comparative example, the area circled by the dashed box is the fluctuation area of the admittance curve.

[0178] For the admittance curve, the fluctuation in the admittance curve can characterize the influence of spurious modes on the signal response. Specifically, when the suppression effect of the resonator on spurious modes is weaker, the fluctuation in the admittance curve is larger.

[0179] In Figures 27 - 30 In each legend, Figure 27 , Figure 29 and Figure 30 there are two fluctuations, Figure 28 there is one fluctuation. Among them, Figure 27 , Figure 29 and Figure 30 The frequency range corresponding to the first fluctuation of Figure 28 and the frequency range of the fluctuation generated by are both between the resonance frequency and the anti-resonance frequency of the resonator;Figure 28 The fluctuation frequency range of Figure 27 and Figure 29 and Figure 30 the frequency range corresponding to the second fluctuation of Figures 27 - 30 are all within the range greater than the anti-resonant frequency. Based on

[0180] Figure 27 and Figure 29 and Figure 30 the frequency ranges corresponding to the second fluctuation of Figures 27 - 30 are the same, and are all within the range greater than the anti-resonant frequency. Based on

[0181] For Figure 28 the illustrated example shown, within the frequency range greater than the anti-resonant frequency, Embodiment 85 of the present application eliminates the spurious modes within this frequency range. That is, on the premise that other parameters are the same, setting the thickness of the piezoelectric substrate 20 to 250 nm has a significant inhibitory effect on the spurious modes within the frequency range greater than the anti-resonant frequency. In summary, the thickness of the piezoelectric substrate needs to be reasonably matched to ensure that the resonator has a good inhibitory effect on spurious modes in different frequency ranges. Specifically, Embodiments 84 - 86 have relatively good inhibitory effects on spurious modes in each frequency range because the thickness range of the piezoelectric substrate 20 selected in Embodiments 84 - 86 meets the selection rules of the embodiments of the present application. Correspondingly, the inhibitory effect of the resonator 100 of the present application on spurious modes is improved, and the Q value and performance of the resonator 100 of the present application are improved.

[0182] Specifically, by comparing Figures 27 - 30 it can be seen that within the frequency range between the resonant frequency and the anti-resonant frequency, the inhibitory effects of Embodiment 85 and Embodiment 86 on the spurious modes within this frequency range are significantly better than those of Embodiment 84. And within the frequency range greater than the anti-resonant frequency, the inhibitory effect of Embodiment 85 on the spurious modes within this frequency range is significantly better than those of Embodiment 84 and Embodiment 86, while the difference in the inhibitory effects of Embodiment 84 and Embodiment 86 on the spurious modes within this frequency range is small.

[0183] Therefore, the thickness of the piezoelectric substrate 20 of the resonator 100 of the present application is selected to be 250 nm - 300 nm to ensure the suppression effect of the resonator 100 of the present application on spurious modes in various frequency ranges. Further, when the thickness of the piezoelectric substrate 20 of the resonator 100 of the present application is selected to be 250 nm, it is possible to ensure that the spurious mode intensity in the frequency range between the resonance frequency and the anti-resonance frequency is small while eliminating the spurious modes in the frequency range where the frequency is greater than the anti-resonance frequency. Thereby further improving the Q value and performance of the resonator 100 of the present application.

[0184] In one embodiment, the duty cycle of the electrode fingers 32 of the interdigital transducer 30 is greater than or equal to 0.15 and less than or equal to 0.65. Herein, the duty cycle refers to the ratio of the distance between two adjacent electrode fingers 32 to the finger width of a single electrode finger 32. When the duty cycle is too large, the input signal time of the interdigital transducer 30 increases, which may lead to non-linear effects and harmonic generation, thereby increasing the spurious mode intensity. When the duty cycle is too small, the manufacturing difficulty of the resonator 100 of the present application increases.

[0185] That is, the resonator 100 of the present application sets the duty cycle of the interdigital transducer 30 to be between 0.15 and 0.65, so as to reduce the manufacturing difficulty of the resonator 100 of the present application while reducing the spurious mode intensity of the resonator 100 of the present application, which is beneficial to improving the Q value and performance of the resonator 100 of the present application.

[0186] In one embodiment, the duty cycle of the electrode fingers 32 of the interdigital transducer 30 is greater than or equal to 0.35 and less than or equal to 0.55. By further limiting the duty cycle range, the spurious mode intensity of the resonator 100 of the present application can be further reduced, and the Q value and performance of the resonator 100 of the present application can be improved.

[0187] Exemplarily, please refer to Figures 31 - 33 , Figures 31 - 33 which is a comparison diagram of admittance curves obtained by simulating resonators with different duty cycles. Among them, Figures 31 - 33 the abscissa of is frequency, the unit is GHz, and the ordinate is the input admittance of the first port, that is, Y(1,1), and its unit is dB.

[0188] For Figures 31 - 33 each embodiment in, the finger pitch of the electrode fingers 32 of the interdigital transducer 30 is 0.58 μm, the thickness of the electrode fingers 32 is 100 nm, the aperture size is equal to 17.4 μm, the material of the piezoelectric substrate 20 is lithium niobate, the crystal cutting angle of lithium niobate on the YX plane is 15°, and the thickness of the piezoelectric substrate 20 is 250 nm. The material of the high-frequency spurious mode suppression layer 40 is polysilicon, the thickness of the high-frequency spurious mode suppression layer 40 is 580 nm, the material of the substrate 10 is silicon carbide, the thickness of the substrate 10 is 4.5 μm, and the Euler angles of each substrate 10 are the same.

[0189] In Figures 31 - 33 the legend, the number of embodiments is five, namely Embodiment 87 - Embodiment 91. Among them, the thickness of the duty cycle of each embodiment is different. Specifically, the duty cycle DF of Embodiment 87 is 0.35. The duty cycle DF of Embodiment 88 is 0.4. The duty cycle DF of Embodiment 89 is 0.45. The duty cycle DF of Embodiment 90 is 0.5. The duty cycle DF of Embodiment 91 is 0.55.

[0190] Based on the admittance curve comparison diagrams respectively simulated from the above five embodiments. For the admittance curve, the fluctuations in the admittance curve can characterize the influence of the spurious modes on the signal response. Specifically, when the resonator has a weaker suppression effect on the spurious modes, the fluctuations in the admittance curve are greater. It is worth noting that Figure 32 and Figure 33 respectively correspond to Figure 31 the enlarged schematic diagrams of the regions outlined by different dashed lines as shown.

[0191] It can be clearly seen from Figure 32 that in the frequency range between the resonance frequency and the anti - resonance frequency, the fluctuation intensities of Embodiment 87 - Embodiment 91 are relatively consistent. That is, the change in the duty cycle has an insignificant suppression effect on the spurious modes between the resonance frequency and the anti - resonance frequency. It can be clearly seen from Figure 33 that in the frequency interval greater than the anti - resonance frequency, as the duty cycle increases, the intensity of the spurious modes becomes weaker and weaker. That is, the increase in the duty cycle has a promoting effect on the suppression effect of the spurious modes in the frequency range greater than the anti - resonance frequency.

[0192] In summary, on the premise of meeting the manufacturing process, the larger the duty cycle, the better the suppression effect of the resonator 100 of the present application on the spurious modes in the frequency interval greater than the anti - resonance frequency. Correspondingly, the Q - value and performance of the resonator 100 of the present application are better. Specifically, Embodiment 89 - Embodiment 91 have the best suppression effect on the spurious modes with frequencies greater than the anti - resonance frequency. Correspondingly, when other parameters are the same, the resonator 100 of the present application sets the duty cycle of the electrode fingers 32 of the interdigital transducer 30 to be between 0.45 - 0.55, which can significantly improve the suppression effect of the resonator 100 of the present application on the spurious modes in the frequency interval greater than the anti - resonance frequency. Thereby improving the Q - value and performance of the resonator 100 of the present application.

[0193] In one embodiment, the thickness of the electrode fingers 32 of the interdigital transducer 30 is greater than or equal to 80 nm and less than or equal to 120 nm. Wherein, when the thickness of the electrode fingers 32 is too thick, it may increase the natural vibration frequency of the resonator 100 of the present application, which may cause the operating frequency of the resonator 100 of the present application not to match the target operating frequency. When the thickness of the electrode fingers 32 is too thin, the mass load of the electrode fingers 32 is reduced, which may cause the electroacoustic coupling efficiency to decrease and affect the operating stability of the resonator 100 of the present application.

[0194] The resonator 100 of the present application sets the thickness of the electrode fingers 32 to be between 80 nm and 120 nm, which can ensure the performance of the resonator 100 of the present application on the premise of ensuring the electroacoustic coupling efficiency between the electrode fingers 32 and the piezoelectric substrate 20.

[0195] In one embodiment, the thickness of the electrode fingers 32 of the interdigital transducer 30 is greater than or equal to 100 nm and less than or equal to 120 nm. By further limiting the thickness range of the electrode fingers 32, the Q value and performance of the resonator 100 of the present application can be further improved.

[0196] Exemplarily, please refer to Figures 34 - 36 , Figures 34 - 36 is a comparison diagram of admittance curves obtained by simulating resonators with electrode fingers 22 of different thicknesses. Among them, Figures 34 - 36 the abscissa is the frequency, the unit is GHz, and the ordinate is the input admittance of the first port, that is, Y(1,1), and its unit is dB.

[0197] For Figures 34 - 36 in each of the embodiments, the pitch of the electrode fingers 32 of the interdigital transducer 30 is 0.58 μm, the aperture size is equal to 17.4 μm, the material of the piezoelectric substrate 20 is lithium niobate, the crystal cutting angle of lithium niobate on the YX plane is 15°, and the thickness of the piezoelectric substrate 20 is 250 nm. The material of the high-frequency spurious mode suppression layer 40 is polysilicon, the thickness of the high-frequency spurious mode suppression layer 40 is 580 nm, the material of the substrate 10 is silicon carbide, the thickness of the substrate 10 is 4.5 μm, and the Euler angles of each substrate 10 are the same.

[0198] In Figures 34 - 36 the shown embodiment, the number of embodiments is five, which are Embodiment 92 - Embodiment 96 respectively. Among them, the thicknesses of the electrode fingers 32 of each embodiment are different. Specifically, the thickness H of the electrode fingers 32 in Embodiment 92 is 80 nm. The thickness H of the electrode fingers 32 in Embodiment 93 is 90 nm. The thickness H of the electrode fingers 32 in Embodiment 94 is 100 nm. The thickness H of the electrode fingers 32 in Embodiment 95 is 110 nm.

[0199] The thickness H of the electrode fingers 32 in Embodiment 96 is 120 nm.

[0200] Comparison diagrams of admittance curves respectively simulated based on the above five embodiments. For the admittance curve, the fluctuations in the admittance curve can characterize the influence of spurious modes on the signal response. Specifically, when the resonator has a weaker suppression effect on spurious modes, the fluctuations in the admittance curve are greater. It is worth noting that Figure 35 and Figure 36 respectively correspond to Figure 34 the enlarged schematic diagrams of the areas outlined by different dashed lines shown in the figure.

[0201] From Figure 35 and Figure 36 it can be clearly seen that whether in the frequency range between the resonance frequency and the anti-resonance frequency or in the frequency range greater than the anti-resonance frequency, the fluctuation intensity of the admittance curves of Embodiment 92 - Embodiment 96 gradually weakens as the thickness of the electrode fingers 32 increases.

[0202] That is to say, within the thickness range corresponding to Embodiment 92 - Embodiment 96, the greater the thickness of the electrode fingers 32, the better the suppression effect of the resonator 100 on spurious modes. Correspondingly, the Q value and performance of the resonator 100 of the present application are better.

[0203] Among them, Embodiment 94 - Embodiment 96 have a relatively significant suppression effect on spurious modes in each frequency range. Correspondingly, when other parameters are the same, the present application sets the thickness of the electrode fingers 32 of the interdigital transducer 30 to be between 100 nm and 120 nm, which can significantly improve the suppression effect of the resonator 100 of the present application on spurious modes in the frequency range greater than the anti-resonance frequency. Thereby improving the Q value and performance of the resonator 100 of the present application.

[0204] As an implementation method, during the preparation process of the resonator 100 of the present application, first based on the Figures 34 - 36 formed by simulation, select a suitable thickness H of the electrode fingers 32, and then based on the process requirements, cooperate with the Figures 31 - 33 formed by simulation, select a suitable duty cycle DF. Then based on the Figures 27 - 30 formed by simulation, select a suitable thickness of the piezoelectric substrate 20 so that the resonator 100 has the best suppression effect on spurious modes in the frequency range greater than the anti-resonance frequency. Finally, based on the Figures 7 - 23 formed by simulation, select a suitable Euler angle of the substrate 10 so that the resonator 100 has the best suppression effect on spurious modes within the resonance frequency and anti-resonance frequency ranges.

[0205] At this time, the prepared resonator 100 of the present application has the best suppression effect on spurious modes in each frequency band, thereby improving the Q value and performance of the resonator 100 of the present application.

[0206] Further, during the preparation of the resonator 100 in this application, after selecting the above data, the finger pitch of the interdigital transducer 30 can be further selected. Specifically, please refer to Figure 37 , Figure 37 which is a comparison chart of the admittance curves of different resonators corresponding to interdigital transducers with different finger pitches. Among them, Figure 37 the abscissa is the frequency, with the unit of GHz, and the ordinate is the input admittance of the first port, that is, Y(1,1), and its unit is dB.

[0207] In the embodiments of this application, the number of embodiments is four, namely Embodiment 97 - Embodiment 100. For Embodiment 97 - Embodiment 100, the thickness of the electrode fingers 32 of the interdigital transducer 30 is 100 nm, the aperture size is equal to 17.4 μm, the material of the piezoelectric substrate 20 is lithium niobate, the crystal cutting angle of lithium niobate on the YX plane is 15°, and the thickness of the piezoelectric substrate 20 is 250 nm. The material of the high-frequency spurious mode suppression layer 40 is polysilicon, the thickness of the high-frequency spurious mode suppression layer 40 is 580 nm, the material of the substrate 10 is silicon carbide, and the thickness of the substrate 10 is 4.5 μm. The first angle φ of the Euler angles of the silicon carbide material of each substrate 10 satisfies: φ = 0° or φ = 180°. The second angle θ of the Euler angles of the silicon carbide material satisfies: θ = 0°. The third angle ψ of the Euler angles of the silicon carbide material satisfies: ψ = 0°.

[0208] In the embodiments of this application, the finger pitches of the electrode fingers 32 in Embodiment 97 - Embodiment 100 are different. Specifically, the finger pitch of the electrode fingers 32 in Embodiment 97 is pitch = 0.58 μm. The finger pitch of the electrode fingers 32 in Embodiment 98 is pitch = 0.68 μm. The finger pitch of the electrode fingers 32 in Embodiment 99 is pitch = 0.78 μm. The finger pitch of the electrode fingers 32 in Embodiment 100 is pitch = 0.88 μm.

[0209] Based on the comparison charts of the admittance curves respectively simulated from the above four embodiments. It can be clearly seen that for each fluctuation within the same range, the fluctuation intensity of Embodiment 97 - Embodiment 100 gradually weakens as the finger pitch of the electrode fingers 32 decreases. That is, the smaller the finger pitch of the electrode fingers 32, the better the suppression effect of the resonator 100 on spurious modes. When the finger pitch of the electrode fingers 32 is 0.58 μm, spurious modes can be eliminated.

[0210] Among them, in Figure 37In the illustrated legend, in Embodiments 98 - 100, there are small spurious modes in the frequency range greater than the anti-resonant frequency. During the design process of the resonator 100, it is necessary to determine the finger pitch of the resonator 100 according to other requirements (such as the operating frequency, etc.) in addition to the spurious mode suppression effect. When it is only possible to determine that the finger pitch pitch of the electrode fingers 32 is in the range of 0.58 μm - 0.88 μm, and it is impossible to ensure that the electrode fingers 32 can take the optimal value of 0.58 μm, the thickness of the electrode fingers 32, the duty cycle of the electrode fingers 32, the thickness of the piezoelectric substrate 20, and the Euler angles of the substrate 10 can be reselected to ensure that in the range of the finger pitch pitch of the electrode fingers 32 being 0.58 μm - 0.88 μm, the resonator 100 can have a better spurious mode suppression effect than Embodiments 97 - 100, and even eliminate the spurious modes.

[0211] Exemplarily, by reselecting the Euler angles of the substrate 10, it is possible to form Figure 38 the comparison diagram of the resonator admittance curves corresponding to the interdigital transducers with different finger pitches as shown. Among them, Figure 38 the abscissa is the frequency, with the unit of GHz, and the ordinate is the input admittance of the first port, that is, Y(1,1), and its unit is dB.

[0212] In Figure 38 the illustrated legend, the number of embodiments is four, namely Embodiments 101 - 104. For Embodiments 101 - 104, the thickness of the electrode fingers 32 of the interdigital transducer 30 is 100 nm, the aperture size is equal to 17.4 μm, the material of the piezoelectric substrate 20 is lithium niobate, the crystal cutting angle of lithium niobate on the YX plane is 15°, and the thickness of the piezoelectric substrate 20 is 250 nm. The material of the high-frequency spurious mode suppression layer 40 is polysilicon, the thickness of the high-frequency spurious mode suppression layer 40 is 580 nm, the material of the substrate 10 is silicon carbide, and the thickness of the substrate 10 is 4.5 μm. The first angle φ of the Euler angles of the silicon carbide material of each substrate 10 satisfies: φ = -90° or φ = 90°. The second angle θ of the Euler angles of the silicon carbide material satisfies: θ = 0°. The third angle ψ of the Euler angles of the silicon carbide material satisfies: ψ = 0°.

[0213] The finger pitch pitch of the electrode fingers 32 in Embodiments 101 - 104 is different. Specifically, for Embodiment 101, the finger pitch pitch of the electrode fingers 32 = 0.58 μm. For Embodiment 102, the finger pitch pitch of the electrode fingers 32 = 0.68 μm. For Embodiment 103, the finger pitch pitch of the electrode fingers 32 = 0.78 μm. For Embodiment 104, the finger pitch pitch of the electrode fingers 32 = 0.88 μm.

[0214] Comparison diagram of admittance curves obtained by simulation based on the above four embodiments. It can be clearly seen that for the admittance curves corresponding to different finger spacings, there are no fluctuations, that is, when the other parameters of the resonator except the finger spacing are selected as Figure 38 the values in the four embodiments shown, no matter what value the finger spacing pitch is selected in the range of 0.58μm - 0.88μm, the spurious modes in the frequency range between the resonance frequency and the anti-resonance frequency, as well as the spurious modes in the frequency range above the anti-resonance frequency, can be eliminated.

[0215] Please refer to Figure 39 the schematic cross-sectional structure diagram of the resonator 100 provided by an embodiment of the present application shown.

[0216] As Figure 39 shown, the resonator 100 further includes a passivation layer 50. The passivation layer 50 is disposed on the side of the interdigital transducer 30 away from the piezoelectric substrate 20 and at least covers each electrode finger 32 of the interdigital transducer 30; wherein, the material of the passivation layer 50 includes at least one of silicon oxide and silicon nitride.

[0217] In the embodiment of the present application, the passivation layer 50 covers the electrode finger 32 to prevent external water and oxygen from reacting with the electrode finger 32 and corroding the electrode finger 32, thereby realizing the protection function of the electrode finger 32. On the other hand, the setting of the passivation layer 50 increases the mass load of the electrode finger 32 on the piezoelectric substrate 20, and the frequency of the interdigital transducer 30 can be adjusted.

[0218] In one embodiment, the material of the passivation layer is silicon oxide or silicon nitride.

[0219] Please refer to Figure 40 the schematic cross-sectional structure diagram of another resonator 100 provided by an embodiment of the present application shown.

[0220] As Figure 40 shown, the number of the passivation layers 50 is two. The two passivation layers 50 are stacked on top of each other. One of the passivation layers 50 is prepared with a temperature compensation material and at least covers each electrode finger 32 of the interdigital transducer 30, and the other passivation layer 50 is prepared with a frequency modulation material and covers the interdigital transducer 30.

[0221] Specifically, in the Figure 40 schematic diagram shown, the two passivation layers 50 are respectively a first passivation layer 51 and a second passivation layer 52. The first passivation layer 51 is prepared with a frequency modulation material and covers the interdigital transducer 30, and the second passivation layer 52 is prepared with a temperature compensation material and covers each electrode finger 32.

[0222] Among them, the first passivation layer 51 is used to increase the mass load of the interdigital transducer 30 on the piezoelectric substrate 20, so as to realize the frequency adjustment of the interdigital transducer 30. The second passivation layer 52 compensates for the deformation generated by the piezoelectric substrate 20 when the piezoelectric substrate 20 deforms due to temperature based on the inconsistency between its own thermal expansion effect and the thermal expansion effect of the piezoelectric substrate 20, thereby ensuring the temperature stability of the resonator 100 of the present application.

[0223] In one embodiment, the temperature compensation material includes at least one of silicon oxide, silicon nitride, silicon oxynitride, tellurium dioxide, and silicon oxyfluoride.

[0224] In one embodiment, the frequency modulation material includes at least one of silicon oxide, silicon nitride, aluminum nitride, and aluminum oxide.

[0225] In one embodiment, the operating frequency of the resonator 100 is greater than or equal to 0.4 GHz and less than or equal to 7 GHz. When the operating frequency of the resonator 100 is too high, the mass and mechanical damping of the resonator 100 may cause greater energy loss, thereby reducing the efficiency of the resonator 100 of the present application and reducing the response performance of the resonator 100. When the operating frequency of the resonator 100 is too low, the response speed of the resonator 100 is slow, resulting in a decrease in the sensitivity of the resonator 100.

[0226] Therefore, the limitation of the operating frequency range of the resonator 100 can reduce the operating loss of the resonator 100 and improve the operating efficiency of the resonator 100 of the present application on the premise of ensuring the sensitivity of the resonator 100.

[0227] In one embodiment, the operating frequency of the resonator 100 is greater than or equal to 2.5 GHz and less than or equal to 4.5 GHz. This embodiment can further reduce the operating loss of the resonator 100 and further improve the operating efficiency of the resonator 100 of the present application on the premise of ensuring the sensitivity of the resonator 100.

[0228] In one embodiment, the operating frequency of the resonator 100 is greater than or equal to 0.4 GHz and less than or equal to 7 GHz. The duty cycle of the electrode fingers 32 of the interdigital transducer 30 is greater than or equal to 0.15 and less than or equal to 0.65. The finger pitch is greater than or equal to 0.58 μm and less than or equal to 0.88 μm. The thickness of the electrode fingers 32 is greater than or equal to 80 nm and less than or equal to 120 nm. The material of the piezoelectric substrate 20 is lithium niobate. The crystal cutting angle of lithium niobate in the YX plane is greater than or equal to 5° and less than or equal to 20°. The thickness of the piezoelectric substrate 20 is greater than or equal to 200 nm and less than or equal to 300 nm. The first angle φ of the Euler angles of the silicon carbide material satisfies one of: 0° ≤ φ ≤ 10°, 80° ≤ φ ≤ 100°, 170° ≤ φ ≤ 190°, 260° ≤ φ ≤ 280°, 350° ≤ φ < 360°; the second angle θ of the Euler angles of the silicon carbide material satisfies one of: 0° ≤ θ ≤ 10°, 70° ≤ θ ≤ 120°, 170° ≤ θ ≤ 190°, 250° ≤ θ ≤ 300°, 350° ≤ θ < 360°; the third angle ψ of the Euler angles of the silicon carbide material satisfies one of: 0° ≤ ψ ≤ 10°, 80° ≤ ψ ≤ 100°, 170° ≤ ψ ≤ 190°, 260° ≤ ψ ≤ 280°, 350° ≤ ψ < 360°.

[0229] In one embodiment, the operating frequency of the resonator 100 is greater than or equal to 2.5 GHz and less than or equal to 4.5 GHz. The duty cycle of the electrode fingers 32 of the interdigital transducer 30 is greater than or equal to 0.35 and less than or equal to 0.55. The finger pitch is greater than or equal to 0.58 μm and less than or equal to 0.88 μm. The thickness of the electrode fingers 32 is greater than or equal to 100 nm and less than or equal to 120 nm. The material of the piezoelectric substrate 20 is lithium niobate. The crystal cutting angle of lithium niobate in the YX plane is equal to 15°. And the thickness of the piezoelectric substrate 20 is greater than or equal to 240 nm and less than or equal to 260 nm. The first angle φ of the Euler angles of the silicon carbide material satisfies one of: 80° ≤ φ ≤ 100°, 260° ≤ φ ≤ 280°; the second angle θ of the Euler angles of the silicon carbide material satisfies: 0° ≤ θ < 360°; the third angle ψ of the Euler angles of the silicon carbide material satisfies one of: 80° ≤ ψ ≤ 100°, 260° ≤ ψ ≤ 280°.

[0230] In one embodiment, the operating frequency of the resonator is greater than or equal to 2.5 GHz and less than or equal to 4.5 GHz, the duty cycle of the electrode fingers of the interdigital transducer is greater than or equal to 0.35 and less than or equal to 0.55, the finger pitch is greater than or equal to 0.58 μm and less than or equal to 0.88 μm, the thickness of the electrode fingers is greater than or equal to 100 nm and less than or equal to 120 nm; the material of the piezoelectric substrate is lithium niobate, and the crystal cutting angle of lithium niobate on the YX plane is equal to 15°; the thickness of the piezoelectric substrate is greater than or equal to 240 nm and less than or equal to 260 nm; the first angle φ is one of 0°, 90°, 180°, 270°; and / or, the second angle θ is one of 0°, 80°, 90°, 100°, 110°, 180°, 260°, 270°, 280°, 290°; and / or, the third angle ψ is one of 0°, 90°, 180°, 270°.

[0231] Please refer to Figure 41 Another cross-sectional structural schematic diagram of the resonator 100 provided by an embodiment of the present application as shown.

[0232] As Figure 41 As shown, the resonator 100 of the present application includes a substrate 10, a piezoelectric substrate 20, an interdigital transducer 30, and a high-frequency spurious mode suppression layer 40. Along the thickness direction of the substrate 10, the high-frequency spurious mode suppression layer 40, the piezoelectric substrate 20, and the interdigital transducer 30 are sequentially stacked.

[0233] In the embodiment of the present application, the interdigital transducer 30 is used to cooperate with the piezoelectric substrate 20 to realize the acoustic-electric conversion function of the resonator 100 of the present application. The high-frequency spurious mode suppression layer 40, based on its own material properties, isolates, attenuates, or changes the propagation path of the spurious mode to avoid the deterioration of high-frequency performance caused by high-frequency electron spillage. That is, the high-frequency spurious mode suppression layer 40 is used to suppress high-frequency spurious modes to improve the Q value and performance of the resonator 100 of the present application.

[0234] In one embodiment, the surface roughness of the substrate 10 facing the piezoelectric substrate 20 is greater than the surface roughness of the piezoelectric substrate 20 facing away from the substrate 10. That is, the surface of the substrate 10 facing the piezoelectric substrate 20 is uneven. It can be understood that during the preparation of the resonator 100 of the present application, it is necessary to grow a lithium niobate material on the surface of the substrate 10 to cooperate with the formation of the piezoelectric substrate 20.

[0235] In one embodiment, the material of the piezoelectric substrate 20 is lithium niobate, and the material of the high-frequency spurious mode suppression layer 40 includes lithium niobate and silicon carbide. Among them, after the resonator 100 of the present application is prepared, due to the uneven interface between the substrate 10 and the piezoelectric substrate 20, there are some regions in the thickness direction of the substrate 10 that simultaneously include lithium niobate material and silicon carbide material. At this time, the region with both lithium niobate and silicon carbide is formed into the high-frequency spurious mode suppression layer of the resonator 100 of the present application.

[0236] In one embodiment, the high-frequency spurious mode suppression layer 40 is prepared from a non-piezoelectric material. Based on the acousto-electric conversion function of the piezoelectric material, the resonator 100 of the present application sets the material of the high-frequency spurious mode suppression layer 40 as a non-piezoelectric material, which can avoid the acousto-electric coupling phenomenon generated by the electric signal generated when the interdigital transducer 30 works in cooperation with the high-frequency spurious mode suppression layer 40. Thus, while ensuring the suppression of high-frequency spurious modes by the high-frequency spurious mode suppression layer 40, the signal quality and stability of the resonator 100 of the present application are ensured, and the Q value and performance of the resonator 100 of the present application are ensured.

[0237] In one embodiment, the non-piezoelectric material used for the high-frequency spurious mode suppression layer 40 includes at least one of silicon oxide and polysilicon. Along the thickness direction of the substrate 10, the high-frequency spurious mode suppression layer 40 is located between the piezoelectric substrate 20 and the substrate 10. During the preparation process of the resonator 100 of the present application, it is necessary to grow silicon oxide or polysilicon material on the surface of the substrate 10 to form the high-frequency spurious mode suppression layer 40, and then grow lithium niobate material on the surface of the high-frequency spurious mode suppression layer 40 to form the piezoelectric substrate 20. At this time, the material of the high-frequency spurious mode suppression layer 40 is silicon oxide or polysilicon.

[0238] In one embodiment, the material of the high-frequency spurious mode suppression layer 40 is silicon carbide material doped with polysilicon. That is, during the preparation process of the resonator 100 of the present application, polysilicon material is doped on the surface of the substrate 10 by ion implantation to form the high-frequency spurious mode suppression layer 40.

[0239] The resonator 100 of the present application includes a substrate 10, and a piezoelectric substrate 20 and an interdigital transducer 30 sequentially stacked on the surface of the substrate 10. Among them, the interdigital transducer 30 is used to cooperate with the piezoelectric substrate 20 to realize the acousto-electric conversion function of the resonator 100 of the present application.

[0240] In the embodiment of the present application, the substrate 10 is prepared from a silicon carbide material. Compared with the prior art solution of setting the substrate material as silicon, the silicon carbide material has a stronger energy confinement ability. It can be understood that by setting the material of the substrate 10 of the resonator 100 of the present application as silicon carbide, the high-frequency hybrid modes generated during the operation of the resonator 100 of the present application can be suppressed by the substrate 10. That is to say, while the substrate 10 realizes the supporting function for the piezoelectric substrate 20 and the interdigital transducer 30, it can also suppress the generation of high-frequency hybrid modes. Thereby reducing the signal loss caused by high-frequency hybrid modes, ensuring the Q value of the resonator 100 of the present application, and improving the performance of the resonator 100 of the present application.

[0241] On the other hand, compared with the prior art solution of setting the substrate material as silicon, the silicon carbide material also has better heat dissipation ability and smaller resistance. Among them, the better heat dissipation ability improves the heat dissipation efficiency of the resonator 100 of the present application, thereby reducing the influence of temperature on the working performance of the resonator 100 of the present application. The smaller resistance enables the substrate to generate less heat during operation, thereby reducing the energy loss of the resonator 100 of the present application. Thereby improving the Q value and performance of the resonator 100 of the present application.

[0242] In one embodiment, the resonator 100 of the present application includes a substrate 10, a piezoelectric substrate 20, and an interdigital transducer 30. Along the thickness direction of the substrate 10, the piezoelectric substrate 20 and the interdigital transducer 30 are sequentially stacked on the substrate 10. Among them, the piezoelectric substrate 20 is prepared from a lithium niobate material, and the crystal cutting angle of the lithium niobate on the YX plane is greater than or equal to 5° and less than or equal to 20°.

[0243] It can be understood that the resonator 100 of the present application restricts the crystal cutting angle of the piezoelectric substrate 20 on the YX plane to improve the electromechanical coupling coefficient of the piezoelectric substrate 20, thereby improving the acoustic-electric conversion efficiency of the piezoelectric substrate 20 and enhancing the sensitivity and response speed of the resonator 100 of the present application.

[0244] It should be understood that the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first", "second" may explicitly or implicitly include one or more features. In the description of the embodiments of the present application, the meaning of "a plurality" is two or more unless otherwise specifically defined.

[0245] In the description of this specification, the descriptions with reference to the terms "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiments or examples are included in at least one embodiment or example of this application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiments or examples. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0246] It should be understood that the application of this application is not limited to the above examples. For those of ordinary skill in the art, improvements or transformations can be made according to the above description. All such improvements and transformations should fall within the protection scope of the appended claims of this application. Those of ordinary skill in the art can understand all or part of the processes of implementing the above embodiments, and the equivalent changes made according to the claims of the present invention still fall within the scope covered by the present invention.

Claims

1. A resonator, characterized in that: It comprises a substrate, a piezoelectric substrate and an interdigital transducer arranged in sequence on the substrate, wherein the substrate is made of silicon carbide material, wherein: A first angle of the Euler angle of the silicon carbide material satisfy: One of the following; the third angle ψ of the Euler angle of the silicon carbide material satisfies: one of 0°≤ψ≤20°, 70°≤ψ≤110°, 160°≤ψ≤200°, 250°≤ψ≤290°, and 340°≤ψ<360°.

2. The resonator according to claim 1, characterized in that The second angle θ of the Euler angle of the silicon carbide material satisfies one of: 0°≤θ≤10°, 70°≤θ≤120°, 170°≤θ≤190°, 250°≤θ≤300°, and 350°≤θ<360°.

3. The resonator according to claim 1, characterized in that A first angle of the Euler angle of the silicon carbide material satisfy: One of the following: the second angle θ of the Euler angle of the silicon carbide material satisfies: 0°≤θ<360°; the third angle ψ of the Euler angle of the silicon carbide material satisfies: one of 80°≤ψ≤100°, 260°≤ψ≤280°.

4. The resonator according to claim 1, characterized in that The first angle satisfy: one of; and / or, The third angle ψ satisfies one of: 0°≤ψ≤10°, 80°≤ψ≤100°, 170°≤ψ≤190°, 260°≤ψ≤280°, 350°≤ψ<360°.

5. The resonator according to claim 1, characterized in that The first angle is one of 0°, 90°, 180°, 270°; and / or, The second angle θ of the Euler angle of the silicon carbide material is one of 0°, 80°, 90°, 100°, 110°, 180°, 260°, 270°, 280°, and 290°; and / or, The third angle ψ is one of 0°, 90°, 180°, and 270°.

6. The resonator according to claim 1, characterized in that When the second angle θ and the third angle ψ of the Euler angle of the silicon carbide material are both 0° or 360°, the first angle satisfy: one of; When the first angle When the second angle θ of the Euler angle of the silicon carbide material is 0° or 360°, the second angle θ of the Euler angle of the silicon carbide material satisfies one of: 0°≤θ≤10°, 70°≤θ≤120°, 170°≤θ≤190°, 250°≤θ≤300°, and 350°≤θ<360°; When the first angle When the second angle θ of the Euler angle of the silicon carbide material is 0° or 360°, the third angle ψ satisfies one of: 0°≤ψ≤10°, 80°≤ψ≤100°, 170°≤ψ≤190°, 260°≤ψ≤280°, 350°≤ψ<360°; When the first angle When the second angle θ and the third angle ψ are both 90° or 270°, the second angle θ of the Euler angle of the silicon carbide material satisfies: 0°≤θ<360°.

7. The resonator according to claim 1, characterized in that When the second angle θ of the Euler angle of the silicon carbide material is 0° or 360°, the first angle satisfy: The third angle ψ satisfies: 86°≤ψ≤94°.

8. The resonator according to any one of claims 1 to 7, characterized in that: The resonator further includes a high-frequency stray mode suppression layer, and along the thickness direction of the substrate, the high-frequency stray mode suppression layer is located between the piezoelectric substrate and the substrate.

9. The resonator according to claim 8, characterized in that The material of the piezoelectric substrate is lithium niobate, and the material of the high-frequency mixed mode suppression layer includes lithium niobate and silicon carbide.

10. The resonator according to claim 9, characterized in that The roughness of the surface of the substrate facing the piezoelectric substrate is greater than the roughness of the surface of the piezoelectric substrate facing away from the substrate, and the high-frequency heterogeneous mode suppression layer is an interface layer between the substrate and the piezoelectric substrate.

11. The resonator according to claim 8, characterized in that The material used for the high-frequency heterogeneous mode suppression layer includes at least one of silicon oxide and polysilicon.

12. The resonator according to claim 8, characterized in that The high-frequency heterogeneous mode suppression layer is a silicon oxide layer or a polysilicon layer; or, The high-frequency heterogeneous mode suppression layer includes a plurality of stacked sub-layers, and any two adjacent sub-layers are made of different materials.

13. The resonator according to claim 12, characterized in that When the high-frequency heterogeneous mode suppression layer includes a plurality of stacked sub-layers, the material of one of any two adjacent sub-layers is silicon oxide, and the material of the other sub-layer is polysilicon.

14. The resonator according to claim 8, characterized in that The material of the high-frequency mixed mode suppression layer is silicon carbide material doped with polysilicon.

15. The resonator according to claim 9, characterized in that Along the thickness direction of the substrate, the maximum thickness dimension of the high-frequency heterogeneous mode suppression layer is greater than or equal to 1 nm.

16. The resonator according to any one of claims 1 to 7, characterized in that: The material of the piezoelectric substrate is lithium niobate, and the crystal cutting angle of the lithium niobate on the YX plane is greater than or equal to 5° and less than or equal to 48°.

17. The resonator according to claim 16, characterized in that The crystal cutting angle is greater than or equal to 5° and less than or equal to 20°.

18. The resonator according to any one of claims 1 to 7, characterized in that: The thickness of the piezoelectric substrate is greater than or equal to 200 nm and less than or equal to 300 nm; and / or, The duty cycle of the electrode fingers of the IDT is greater than or equal to 0.15 and less than or equal to 0.65; and / or, The thickness of the electrode fingers of the IDT is greater than or equal to 80 nm and less than or equal to 120 nm; and / or, The operating frequency of the resonator is greater than or equal to 0.4 GHz and less than or equal to 7 GHz.

19. The resonator according to claim 18, characterized in that The thickness of the piezoelectric substrate is greater than or equal to 240 nm and less than or equal to 260 nm; and / or, The duty cycle of the electrode fingers of the IDT is greater than or equal to 0.35 and less than or equal to 0.55; and / or, The thickness of the electrode fingers of the IDT is greater than or equal to 100 nm and less than or equal to 120 nm; and / or, The finger spacing between any two adjacent electrode fingers in the interdigital transducer is greater than or equal to 0.58 μm and less than or equal to 0.88 μm; and / or, The operating frequency of the resonator is greater than or equal to 2.5 GHz and less than or equal to 4.5 GHz.

20. The resonator according to any one of claims 1 to 7, characterized in that: The resonator further comprises a passivation layer, which is arranged on a side of the IDT away from the piezoelectric substrate and at least covers each electrode finger of the IDT; wherein the material of the passivation layer comprises at least one of silicon oxide and silicon nitride.

21. The resonator according to any one of claims 1 to 7, characterized in that: The operating frequency of the resonator is greater than or equal to 0.4 GHz and less than or equal to 7 GHz, the duty cycle of the electrode fingers of the interdigital transducer is greater than or equal to 0.15 and less than or equal to 0.65, the finger spacing between any two adjacent electrode fingers in the interdigital transducer is greater than or equal to 0.58 μm and less than or equal to 0.88 μm, and the thickness of the electrode fingers is greater than or equal to 80 nm and less than or equal to 120 nm; The material of the piezoelectric substrate is lithium niobate, and the crystal cutting angle of the lithium niobate on the YX plane is greater than or equal to 5° and less than or equal to 20°; the thickness of the piezoelectric substrate is greater than or equal to 200nm and less than or equal to 300nm; A first angle of the Euler angle of the silicon carbide material satisfy: The second angle θ of the Euler angle of the silicon carbide material satisfies one of: 0°≤θ≤10°, 70°≤θ≤120°, 170°≤θ≤190°, 250°≤θ≤300°, and 350°≤θ<360°; the third angle ψ of the Euler angle of the silicon carbide material satisfies one of: 0°≤ψ≤10°, 80°≤ψ≤100°, 170°≤ψ≤190°, 260°≤ψ≤280°, and 350°≤ψ<360°.

22. The resonator according to any one of claims 1 to 7, characterized in that: The operating frequency of the resonator is greater than or equal to 2.5 GHz and less than or equal to 4.5 GHz, the duty cycle of the electrode fingers of the interdigital transducer is greater than or equal to 0.35 and less than or equal to 0.55, the finger spacing between any two adjacent electrode fingers in the interdigital transducer is greater than or equal to 0.58 μm and less than or equal to 0.88 μm, and the thickness of the electrode fingers is greater than or equal to 100 nm and less than or equal to 120 nm; The material of the piezoelectric substrate is lithium niobate, and the crystal cutting angle of the lithium niobate on the YX plane is greater than or equal to 10° and less than or equal to 20°; the thickness of the piezoelectric substrate is greater than or equal to 240nm and less than or equal to 260nm; A first angle of the Euler angle of the silicon carbide material satisfy: One of the following: the second angle θ of the Euler angle of the silicon carbide material satisfies: 0°≤θ<360°; the third angle ψ of the Euler angle of the silicon carbide material satisfies: one of 80°≤ψ≤100°, 260°≤ψ≤280°.

23. The resonator according to any one of claims 1 to 7, characterized in that: The operating frequency of the resonator is greater than or equal to 2.5 GHz and less than or equal to 4.5 GHz, the duty cycle of the electrode fingers of the interdigital transducer is greater than or equal to 0.35 and less than or equal to 0.55, the finger spacing between any two adjacent electrode fingers in the interdigital transducer is greater than or equal to 0.58 μm and less than or equal to 0.88 μm, and the thickness of the electrode fingers is greater than or equal to 100 nm and less than or equal to 120 nm; The material of the piezoelectric substrate is lithium niobate, and the crystal cutting angle of the lithium niobate on the YX plane is equal to 15°; the thickness of the piezoelectric substrate is greater than or equal to 240nm and less than or equal to 260nm; The first angle is one of 0°, 90°, 180°, 270°; and / or the second angle θ is one of 0°, 80°, 90°, 100°, 110°, 180°, 260°, 270°, 280°, 290°; and / or the third angle ψ is one of 0°, 90°, 180°, 270°.

24. A resonator, characterized in that: It comprises a substrate and a high-frequency mixed mode suppression layer, a piezoelectric substrate and an interdigital transducer which are sequentially arranged on the substrate; the substrate is made of silicon carbide material, and the piezoelectric substrate is made of lithium niobate material; Among them, the material of the high-frequency stray mode suppression layer includes lithium niobate and silicon carbide; or, the material used by the high-frequency stray mode suppression layer includes at least one of silicon oxide and polysilicon; or, the material of the high-frequency stray mode suppression layer is silicon carbide material doped with polysilicon.

25. A resonator, characterized in that: It comprises a substrate, a piezoelectric substrate and an interdigital transducer arranged in sequence on the substrate, wherein the substrate is made of silicon carbide material, the piezoelectric substrate is made of lithium niobate material, and the crystal cutting angle of the lithium niobate on the YX plane is greater than or equal to 5° and less than or equal to 20°.

26. A filter, characterized in that: Comprising a resonator as claimed in any one of claims 1-25.

27. A multiplexer, characterized in that: The invention comprises an antenna and a transmitting filter and a receiving filter respectively connected to the antenna for communication, wherein at least one of the transmitting filter and the receiving filter comprises the filter according to claim 26.

28. A radio frequency front-end module, characterized in that: Comprising the multiplexer as claimed in claim 27.

29. An electronic device, characterized in that: Comprising the radio frequency front-end module as described in claim 28.

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