Gas injection apparatus, substrate processing apparatus, and thin film deposition method

Abstract

The present invention relates to a gas injection apparatus, a substrate processing apparatus, and a thin film deposition method, and more particularly, to a gas injection apparatus, a substrate processing apparatus, and a thin film deposition method for depositing a thin film by injecting a gas onto a substrate. A gas injection apparatus according to an embodiment of the present invention comprises: a first electrode in which a first gas supply path and a second gas supply path are independently provided, and which has a first gas supply hole and a second gas supply hole connected to the first gas supply path and the second gas supply path, respectively; and a second electrode electrically insulated from the first electrode, spaced apart from the first electrode, and having a plurality of openings arranged so as not to overlap the first supply hole and the second supply hole.

Description

Technical Field

[0001] The present disclosure relates to an apparatus for ejecting gas, an apparatus for processing a substrate, and a method for depositing a thin film. More specifically, the present disclosure relates to an apparatus for ejecting gas, an apparatus for processing a substrate, and a method for depositing a thin film by ejecting gas onto a substrate. Background Art

[0002] Generally, semiconductor elements or display devices are manufactured by depositing various materials in the form of thin films on a substrate and patterning the deposited thin films. To this end, various processes are performed, such as a deposition process, an etching process, a cleaning process, and a drying process.

[0003] Here, the deposition process forms a thin film having properties required for semiconductor elements or display devices on the substrate. The above deposition process is generally performed by a substrate processing apparatus that ejects a processing gas through a gas ejection apparatus having a plurality of ejection holes to form a thin film on the substrate through a chemical reaction.

[0004] When forming a thin film on a substrate by using a gas ejection apparatus having a plurality of ejection holes, it is extremely important to ensure deposition uniformity. Therefore, there is an increasing demand for a gas ejection apparatus having an improved opening structure to deposit a uniform thin film.

[0005] Related Technical Documents

[0006] Korean Patent Laid-Open No. 10-2004-0104197 Summary of the Invention

[0007] Technical Problem

[0008] The present disclosure provides an apparatus for ejecting gas, an apparatus for processing a substrate, and a method for depositing a thin film that can deposit a uniform thin film.

[0009] Technical Solution

[0010] According to an exemplary embodiment, an apparatus for ejecting gas includes: a first electrode in which a first gas supply path and a second gas supply path are independently defined, and the first electrode has a first gas supply hole and a second gas supply hole respectively connected to the first gas supply path and the second gas supply path; and a second electrode that is electrically insulated from and spaced apart from the first electrode, and has a plurality of openings that are alternately arranged with the first supply hole and the second supply hole.

[0011] The second electrode may be spaced apart from the first electrode by a distance greater than 3 mm and equal to or less than 25 mm.

[0012] The opening may include: a first opening defined on the first electrode side; and a second opening connected to the first opening and having a diameter larger than that of the first opening.

[0013] The first opening may have a diameter of 1 mm to 3 mm.

[0014] The second opening may have a diameter of 10 mm to 14 mm.

[0015] The opening may further include a third opening defined between the first opening and the second opening to connect the first opening and the second opening.

[0016] The third opening may have a cross-section that gradually increases in the direction toward the second opening.

[0017] The second opening may have a diameter of 25 mm to 75 mm.

[0018] The second electrode may have a thickness of 35 mm to 100 mm.

[0019] The openings may be arranged at a distance of 12 mm to 20 mm.

[0020] The first opening and the second opening may have different lengths from each other.

[0021] The first opening may have a length larger than that of the second opening.

[0022] The second opening may have a length larger than that of the first opening.

[0023] According to another exemplary embodiment, an apparatus for processing a substrate includes: a chamber; a substrate support device disposed in the chamber to support a substrate loaded into the chamber; a gas injection device disposed in the chamber to inject gas toward the substrate support device; and a power supply device connected to the gas injection device to supply power to the gas injection device.

[0024] The power supply device may be connected to the second electrode to supply power to the second electrode.

[0025] The power supply device may supply power to the first electrode and the second electrode.

[0026] According to still another exemplary embodiment, a method of depositing a thin film by using the above-described apparatus for processing a substrate deposits a thin film on the substrate by supplying a first gas via a first gas supply path and a second gas via a second gas supply path.

[0027] A thin film may be deposited on the substrate by generating plasma between the first electrode and the second electrode and generating plasma in the second electrode.

[0028] A thin film can be deposited on a substrate by generating a plasma between a second electrode and a substrate support device.

[0029] A thin film can be deposited on a substrate by supplying at least one of a first gas and a second gas and using a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.

[0030] The thin film can include at least one of an indium (In)-doped zinc oxide (ZnO) IZO thin film, a gallium (Ga)-doped zinc oxide (ZnO) GZO thin film, an indium (In) and gallium (Ga)-doped zinc oxide (ZnO) IGZO thin film, a thin film having a high dielectric constant (high-K), a silicon dioxide (SiO2) thin film, and a silicon nitride (SiN) thin film.

[0031] Advantageous Effects

[0032] According to an exemplary embodiment, deposition uniformity can be improved by minimizing the distance between openings through which a processing gas is ejected.

[0033] In addition, a high-density plasma can be formed, and thus a high-quality thin film can be formed. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 is a schematic diagram showing a device for processing a substrate according to an exemplary embodiment.

[0035] Figure 2 is a view showing an arrangement structure of openings in a device for ejecting a gas according to an exemplary embodiment.

[0036] Figure 3 is a view showing a state in which supply holes and openings are defined in a device for ejecting a gas according to an exemplary embodiment. DETAILED DESCRIPTION

[0037] Hereinafter, specific embodiments will be described in detail with reference to the drawings. However, the present invention may be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0038] It will also be understood that when a layer, film, region, or plate is referred to as being “on” another, it can be directly on the other or there can also be one or more intervening layers, films, regions, or plates.

[0039] In addition, this document may use spatial relative terms such as "above" or "upper part" and "below" or "lower part" to easily describe the relationship between one element or feature and another or more elements or another or more features as shown in the drawings. It will be understood that the spatial relative terms are intended to cover different orientations of the device during use or operation in addition to the orientations depicted in the drawings. In the drawings, the thickness of layers and regions is exaggerated for clarity. In the drawings, the same reference numerals always denote the same elements.

[0040] Figure 1 FIG. is a schematic view showing a device for processing a substrate (hereinafter referred to as a substrate processing device) according to an exemplary embodiment. In addition, Figure 2 FIG. is a view showing an arrangement structure of openings in a device for ejecting gas (hereinafter referred to as a gas ejection device) according to an exemplary embodiment. Figure 3 FIG. is a view showing a state in which a supply hole and an opening are formed in a gas ejection device according to an exemplary embodiment.

[0041] Referring to Figures 1 to 3 , a substrate processing device according to an exemplary embodiment includes: a chamber 10; a substrate support device 20 installed in the chamber 10 to support a substrate S disposed in the chamber 10; a gas ejection device 300 installed in the chamber 10 to eject gas toward the substrate support device 20; and a power supply device 400 connected to the gas ejection device 300 to supply power for generating plasma in the chamber 10 to the gas ejection device 300. In addition, the substrate processing device may further include a control device (not shown) for controlling the power supply device 400.

[0042] The chamber 10 has a predetermined reaction space and seals the space. The chamber 10 may include: a main body 14 having a predetermined reaction space by including a flat portion that is approximately circular or rectangular and a side wall portion extending upward from the flat portion; and a cover 12 disposed on the main body 14 that is approximately circular or rectangular to seal the reaction space. However, the exemplary embodiment is not limited to the shape of the chamber 10. For example, the chamber 10 may be manufactured in various shapes corresponding to the shape of the substrate S.

[0043] A discharge hole (not shown) may be formed in a predetermined area of the bottom surface of the chamber 10, and a discharge pipe (not shown) connected to the discharge hole may be provided outside the chamber 10. In addition, the discharge pipe may be connected to a discharge device (not shown). A vacuum pump such as a turbo-molecular pump may be used as the discharge device. Therefore, the inside of the chamber 10 can be vacuum-sucked to a predetermined reduced-pressure atmosphere, such as a predetermined pressure below 0.1 mTorr, by the discharge device. The discharge pipe can be installed not only on the bottom surface of the chamber 10 but also on the side surface of the chamber 10, below the substrate support device 20 which will be described later. In addition, a plurality of discharge pipes and a plurality of discharge devices connected thereto may be installed to reduce the discharge time.

[0044] In addition, a substrate S loaded into the chamber 10 for a substrate processing process (e.g., a thin film deposition process) can be placed on the substrate support device 20. For example, the substrate support device 20 may include an electrostatic chuck to adsorb the substrate S by electrostatic force so that the substrate S is placed and supported on the substrate S, or support the substrate S by vacuum adsorption or mechanical force.

[0045] The substrate support device 20 may have a shape corresponding to the shape of the substrate S, such as a circular shape or a rectangular shape. The substrate support device 20 may include a substrate support 22 on which the substrate S is placed and a lifter 24 provided below the substrate support 22 to vertically move the substrate support 22. Here, the substrate support 22 may be manufactured to be larger than the substrate S, and the lifter 24 may support at least one area (e.g., the central part) of the substrate support 22 when the substrate S is placed on the substrate support 22 and move the substrate support 22 toward the gas injection device 300. In addition, a heater (not shown) may be installed in the substrate support 22. The heater generates heat at a predetermined temperature to heat the substrate support 22 and the substrate S placed on the substrate support 22 to uniformly deposit a thin film on the substrate S.

[0046] The gas supply device may be installed on the cover 12 of the chamber 10. The gas supply device may penetrate through the cover 12 of the chamber 10 and include a first gas supply unit 110 and a second gas supply unit 120 to supply each of a first gas and a second gas to the gas injection device 300. Here, the first gas may include a source gas, and the second gas may include a reaction gas. However, the exemplary embodiments are not limited thereto. For example, the first gas may include a reaction gas, the second gas may include a source gas, or at least one of the first gas and the second gas may include a mixed gas in which a source gas and a reaction gas are mixed. Alternatively, at least one of the first gas and the second gas may be a purge gas. That is, each of the first gas supply unit 110 and the second gas supply unit 120 does not necessarily supply only one kind of gas. Each of the first gas supply unit 110 and the second gas supply unit 120 may supply a plurality of gases simultaneously or supply a gas selected from a plurality of gases.

[0047] The gas injection device 300 is installed inside the chamber 10 (e.g., the bottom surface of the cover 12), and a first gas supply path for injecting and supplying the first gas onto the substrate and a second gas supply path for injecting and supplying the second gas onto the substrate are formed in the gas injection device 300. Since the first gas supply path and the second gas supply path are independent and separated from each other, the first gas and the second gas may be independently supplied onto the substrate without being mixed in the gas injection device 300.

[0048] More specifically, the gas injection device 300 in which the first gas supply path and the second gas supply path are separated from each other includes: a first electrode having a first gas supply hole 312 and a second gas supply hole 314 respectively connected to the first gas supply path and the second gas supply path; and a second electrode 330 spaced apart from the first electrode and having a plurality of openings 332 arranged alternately with the first gas supply hole 312 and the second gas supply hole 314.

[0049] The first electrode may include an upper frame 310 and a lower frame 320. Here, the upper frame 310 may be detachably coupled to the bottom surface of the cover 12, and at the same time, a part of the top surface of the upper frame 310 (e.g., the central portion of the top surface) is spaced apart from the bottom surface of the cover 12 by a predetermined distance. Accordingly, the first gas supplied from the first gas supply unit 110 may diffuse into the space between the top surface of the upper frame 310 and the bottom surface of the cover 12. In addition, the lower frame 320 is spaced apart from the bottom surface of the upper frame 310 by a predetermined distance. Accordingly, the second gas supplied from the second gas supply unit 120 may diffuse into the space between the top surface of the lower frame 320 and the bottom surface of the upper frame 310. The upper frame 310 and the lower frame 320 may be connected along their outer peripheral surfaces and integrated with each other to define an internal spaced-apart space, and the outer peripheral surface may be sealed by a first sealing member 350. Here, the first sealing member 350 may be made of an insulating material to electrically insulate the upper frame 310 and the lower frame 320 from each other, or conversely, the first sealing member 350 may be made of a conductive material to electrically connect the upper frame 310 and the lower frame 320 to each other.

[0050] The first gas supply path may be formed such that the first gas supplied from the first gas supply unit 110 diffuses into the space between the bottom surface of the cover 12 and the upper frame 310, and is supplied into the chamber 10 through the upper frame 310 and the lower frame 320. Here, the first gas supply hole 312 may be connected to the first gas supply path and pass through the upper frame 310 and the lower frame 320 to be isolated from the space between the top surface of the lower frame 320 and the bottom surface of the upper frame 310 at the lower part of the space between the top surface of the upper frame 310 and the bottom surface of the cover 12.

[0051] In addition, the second gas supply path may be formed such that the second gas supplied from the second gas supply unit 120 diffuses into the space between the bottom surface of the upper frame 310 and the top surface of the lower frame 320, and is supplied into the chamber 10 through the lower frame 320. Here, the second gas supply hole 322 may be connected to the second gas supply path and pass through the lower frame 320 at the lower part of the space between the bottom surface of the upper frame 310 and the top surface of the lower frame 320.

[0052] Accordingly, the first gas supply path and the second gas supply path may not communicate with each other, and the first gas and the second gas may be separately supplied downward from the gas supply device through the first electrode.

[0053] The second electrode 330 may be insulated from the first electrode and spaced downward from the first electrode. That is, the second electrode 330 may be insulated from the lower frame 320 and spaced downward from the lower frame 320. The second electrode 330 may be spaced apart from the bottom surface of the lower frame 320 by a predetermined distance D1. Accordingly, the first gas and the second gas supplied downward through the first electrode may diffuse into the space between the top surface of the second electrode 330 and the bottom surface of the lower frame 320. The lower frame 320 and the second electrode 330 may have a structure in which their outer peripheral surfaces are sealed by a second sealing member 360. Here, the second sealing member 360 may be made of an insulating material to electrically insulate the lower frame 320.

[0054] Here, the second electrode 330 may be spaced downward from the first electrode by a distance at which a plasma sheath region formed on the surface of the first electrode (i.e., the bottom surface of the lower frame 320) does not overlap with a plasma sheath region formed on the surface of the second electrode (i.e., the top surface of the second electrode 330). Here, the plasma sheath region refers to a dark field region in which, although energy is exchanged as positive (+) ions are concentrated between the plasma and the surface of the structure, almost no plasma is formed.

[0055] When the plasma sheath region formed on the bottom surface of the lower frame 320 overlaps with the plasma sheath region formed on the top surface of the second electrode 330, no plasma is formed between the bottom surface of the lower frame 320 and the top surface of the second electrode 330. However, according to an exemplary embodiment, since the lower frame 320 and the second electrode 330 are spaced apart from each other by a distance at which the plasma sheath region formed on the bottom surface of the lower frame 320 does not overlap with the plasma sheath region formed on the top surface of the second electrode 330, plasma can be generated between the bottom surface of the lower frame 320 and the top surface of the second electrode 330.

[0056] When the space between the bottom surface of the lower frame 320 and the top surface of the second electrode 330 becomes very wide, the gas may stagnate between the bottom surface of the lower frame 320 and the top surface of the second electrode 330, and the overall size of the gas injection device may increase. Accordingly, the second electrode 330 may be spaced apart from the first electrode by a distance greater than 3 millimeters (mm) and equal to or less than 25 mm. When the second electrode 330 is spaced apart from the first electrode by a distance of 3 mm or less, plasma may not be generated in the space between the bottom surface of the lower frame 320 and the top surface of the second electrode 330, and when the distance is greater than 25 mm, it may not be possible to deposit a high-quality thin film.

[0057] In addition, the second electrode 330 has a plurality of openings 332 that are alternately arranged with the above-described first gas supply holes 312 and second gas supply holes 322. That is, as Figure 2 shown, when the first electrode and the second electrode 330 are viewed from above or below, the plurality of openings 332 do not overlap with one of the first gas supply holes 312 and the second gas supply holes 322. When the first electrode and the second electrode 330 are viewed from above or below, each of the plurality of openings 332 can be arranged between the first gas supply holes 312 along at least one direction. In addition, each of the plurality of openings 332 can be defined at a central position between the first gas supply holes 312 and the second gas supply holes 322 along at least one direction.

[0058] When the openings 332 are arranged to overlap with the first gas supply holes 312 and the second gas supply holes 314, most of the gas supplied from the first gas supply holes 312 and the second gas supply holes 314 can be ejected through the openings 332 that overlap with the first gas supply holes 312 and the second gas supply holes 314. However, not all of the gas may be ejected downward through the openings 332. Some of the gas may flow and stagnate in the space between the bottom surface of the lower frame 320 and the top surface of the second electrode 330 instead of being directly ejected through the openings 332. Since the above-described stagnant gas blocks the smooth flow of the gas and causes the formation of particles, according to an exemplary embodiment, a plurality of openings 332 can be defined in the second electrode 330 to be alternately arranged with each of the first gas supply holes 312 and the second gas supply holes 322.

[0059] As Figure 3As shown, the above-mentioned opening 332 may include a first opening 333 formed on the first electrode side and a second opening 335 connected to the first opening 333 and having a diameter larger than that of the first opening 333. That is, each opening 332 may include a first opening 333 having a predetermined length H1 starting from the top surface of the second electrode 330 and a second opening 335 having a predetermined length H2 starting from the bottom surface of the second electrode 330. Here, the first opening 333 is a gas inlet, and the gas diffused into the space between the bottom surface of the lower frame 320 and the top surface of the second electrode 330 is introduced into the opening 332 through the first opening 333. On the other hand, the second opening 335 is a gas outlet, and the gas introduced into the opening 332 is ejected downward from the second electrode 330 through the second opening 335. The first opening 333 may be alternately arranged with the first gas supply hole 312 and the second gas supply hole 322, and the second opening 335 may extend downward from the first opening 333 and have a diameter larger than that of the first opening 333. In addition, each opening 332 may further include a third opening 334 that connects the first opening 333 and the second opening 335 between the first opening 333 and the second opening 335.

[0060] The first opening 333 may guide the gas diffused into the space between the bottom surface of the lower frame 320 and the top surface of the second electrode 330 to the second opening 335 provided below it. The above-mentioned first opening 333 may have a diameter D2, and the diameter D2 is selected to uniformly guide the gas diffused into the space between the bottom surface of the lower frame 320 and the top surface of the second electrode 330 to each second opening 335. Here, the first opening 333 may have a diameter D2 to form a plasma sheath region therein. That is, the first opening 333 may form a plasma sheath region where almost no plasma is formed because the plasma sheath regions formed on the inner surface of the second electrode 330 where the first opening 333 is formed overlap each other. For this reason, the first opening 333 may have a diameter D2 of 1 mm to 3 mm. When the first opening 333 has a diameter D2 less than 1 mm, the gas may not flow smoothly through the first opening 333, and when the first opening 333 has a diameter D2 greater than 3 mm, plasma may be generated in the first opening 333, resulting in clogging caused by particles. Therefore, the first opening 333 may be formed to have a length H1 of 10 mm to 25 mm starting from the top surface of the second electrode 330.

[0061] The third opening 334 is provided below the first opening 333 to smoothly transfer the gas supplied through the first opening 333 to the second opening 335. The third opening 334 may have a shape in which the cross-section increases from the lower end of the first opening 333 to the upper end of the second opening 335, and this shape may guide the gas supplied through the first opening 333 to pass through the third opening 334 and be smoothly transferred to the second opening 335 without stagnation. However, the third opening 334 is not an essential component. When the third opening 334 is omitted, the second opening 335 may be directly connected to the lower side of the first opening 333.

[0062] The second opening 335 is connected to the lower side of the first opening 333 or the lower side of the third opening 334. The second opening 335 generates plasma in the cylindrical electrode. That is, the second opening 335 provides a wide surface area to generate plasma ionization of the gas introduced into the second opening 335, thereby generating high-density plasma.

[0063] The above-mentioned second opening 335 may have a diameter D3 of 10 mm to 14 mm. When the second opening 335 has a diameter D3 less than 10 mm, high-density plasma may not be formed. Or, when the second opening 335 has a diameter D3 greater than 14 mm, due to the increased distance between the second openings 335, the film may not be deposited uniformly. When the distance between the second openings 335 increases, the gas ejected from each second opening 335 will concentrate at a predetermined position on the substrate S, resulting in non-uniform deposition. However, when the distance between the second openings 335 decreases, the gas ejected from each second opening 335 can overlap on the substrate S to deposit the film more uniformly. The second openings 335 may be arranged at a distance of 12 mm to 20 mm to deposit a uniform film on the substrate S, and when the second opening 335 has a diameter D3 of 14 mm or less, the second openings 335 may be arranged at a distance of 12 mm to 20 mm to improve the deposition uniformity.

[0064] In addition, the second opening 335 may have a length H2 of 25 mm to 75 mm. That is, the second opening 335 may have a length H2 of 25 mm to 75 mm upward from the bottom surface of the second electrode 330. When the second opening 335 has a length H2 less than 25 mm, the generated plasma may have insufficient density. On the other hand, when the second opening 335 has a length H2 greater than 75 mm, the ions generated in the second opening 335 will collide with the inner surface of the second electrode 330 forming the second opening 335, resulting in hole damage due to sputtering. Therefore, the second opening 335 may have a length H2 of 25 mm to 75 mm.

[0065] As described above, the first opening 333 may have a length H1 of 10 mm to 25 mm. Additionally, the second opening 335 may have a length H2 of 25 mm to 75 mm. Thus, the second electrode 330 may have a thickness of 35 mm to 100 mm. When the second electrode 330 has a thickness less than 35 mm, the second electrode 330 may skew due to its own weight, and when the second electrode 330 has a thickness greater than 75 mm, the second electrode 330 may occupy a large amount of space in the chamber 10, thus having poor structural efficiency. Therefore, the second electrode 330 may have a thickness of 35 mm to 100 mm.

[0066] On the other hand, within the range where the second electrode 330 has a set thickness, the length H1 of the first opening 333 and the length H2 of the second opening 335 can be adjusted. That is, different or the same adjustments can be made to the length H1 of the first opening 333 and the length H2 of the second opening 335.

[0067] For example, within the range where the second electrode 330 has a set thickness, the length H1 of the first opening 333 may be greater than the length H2 of the second opening 335. When the thickness of the second electrode 330 is set to 35 mm to 100 mm and the length H2 of the second opening 335 is set to 25 mm, the first opening 333 can be set to have a length H1 of 25 mm to increase the plasma density.

[0068] In addition, the length H1 of the first opening 333 may be less than the length H2 of the second opening 335, that is, the length H2 of the second opening 335 may be greater than the length H1 of the first opening 333, to reduce the plasma density within the range where the second electrode 330 has a set thickness. When the thickness of the second electrode 330 is set to 35 mm to 100 mm and the length H2 of the second opening 335 is set to 25 mm, the length H1 of the first opening 333 can be set to be more than 10 mm and less than 25 mm to reduce the plasma density.

[0069] Moreover, the length H1 of the first opening 333 and the length H2 of the second opening 335 can be equal to each other. As described above, since the same or different adjustments are made to the length H1 of the first opening 333 and the length H2 of the second opening 335, the plasma can be adjusted to have the desired density.

[0070] The power supply device 400 can be connected to the gas injection device 300 to supply power for generating plasma in the chamber 10 to the gas injection device. That is, the power supply device 400 can supply radio frequency power (RF power) for generating plasma in the chamber 10.

[0071] Here, the power supply device 400 can be connected to the second electrode 330 to supply only RF power to the second electrode 330, and the first electrode can be grounded. Here, the first electrode and the second electrode 330 can be insulated by a second sealing member 360 made of an insulating material. As described above, when the power supply device 400 supplies RF power to the second electrode 330 and the first electrode is grounded, each of the first electrode and the second electrode 330 forms an electrode for generating capacitively coupled plasma (CCP). Additionally, since the substrate support 22 is also grounded, CCP can be generated between the second electrode 330 and the support 22. Alternatively, the power supply device 400 can also supply power to the first electrode and the second electrode 330. In this case, the power supply device 400 can supply RF power to each of the first electrode and the second electrode 330.

[0072] The substrate processing apparatus according to the exemplary embodiment described above can be used to deposit a thin film on the substrate S by using a Chemical Vapored Position (CVD) method or an Atomic Layer Deposition (ALD) method. Here, the thin film deposited by the CVD or ALD method can include at least one of an indium (In)-doped zinc oxide (ZnO) (IZO) thin film, a gallium (Ga)-doped zinc oxide (ZnO) (GZO) thin film, an indium (In) and gallium (Ga)-doped zinc oxide (ZnO) (IGZO) thin film, a thin film with a high dielectric constant (high-K), a silicon dioxide (SiO2) thin film, and a silicon nitride (SiN) thin film.

[0073] First, when depositing a thin film on the substrate S by using the CVD method, a source gas and a reaction gas can be supplied to the substrate S simultaneously. Here, the first gas can include the source gas, and the second gas can include the reaction gas. However, the exemplary embodiment is not limited thereto. For example, the first gas can include the reaction gas, the second gas can include the source gas, or at least one of the first gas and the second gas can include a mixed gas containing the source gas and the reaction gas. Alternatively, at least one of the first gas and the second gas can be a purge gas. Here, by supplying RF power to the gas injection device 300 via the power supply device 400, plasma can be formed in the chamber 10 to improve the deposition efficiency.

[0074] In addition, when depositing a thin film on the substrate S by the ALD method, the source gas and the reaction gas can be alternately supplied to the substrate S. Here, the first gas can include the source gas, and the second gas can include the reaction gas. Alternatively, the first gas can include the reaction gas, and the second gas can include the source gas. Alternatively, at least one of the first gas and the second gas can be a purge gas. Here, the processes of supplying the source gas, supplying the purge gas, supplying the reaction gas, and supplying the purge gas can form one process cycle, and the process cycle can be repeated multiple times to deposit a thin film on the substrate S. Here, by supplying RF power to the gas injection device 300 via the power supply device 400, a plasma can be formed in the chamber 10, which can be performed in the process of supplying the reaction gas to improve the deposition efficiency.

[0075] As described above, when depositing a thin film on the substrate S by the CVD or ALD method, by supplying RF power to the gas injection device 300 via the power supply device 400, a plasma can be formed between the first electrode and the second electrode 330, and a plasma can be generated in the second electrode 330. In addition, a high-density CCP can be generated between the second electrode 330 and the substrate support 22.

[0076] As described above, according to the exemplary embodiment, the deposition uniformity can be improved by minimizing the distance between the openings through which the processing gas is ejected. In addition, a high-density plasma can be formed, so that a high-quality thin film can be formed.

[0077] Although specific embodiments are described and illustrated by using specific terms, these terms are only examples for clearly explaining the embodiments. Therefore, it is obvious to those skilled in the art that the embodiments and technical terms can be implemented in other specific forms and can be changed without changing the technical idea or essential features. Therefore, it should be understood that simple modifications according to the embodiments of the present invention can belong to the technical spirit of the present invention.

Claims

1. An apparatus for ejecting gas, comprising: A first electrode, in which a first gas supply path and a second gas supply path are independently defined, and the first electrode has a first gas supply hole and a second gas supply hole respectively connected to the first gas supply path and the second gas supply path; And A second electrode, which is electrically insulated from and spaced apart from the first electrode, and has a plurality of openings arranged alternately with the first gas supply hole and the second gas supply hole.

2. The apparatus for injecting gas according to claim 1, wherein The second electrode is spaced apart from the first electrode at a distance greater than 3 mm and equal to or less than 25 mm.

3. The apparatus for ejecting gas according to claim 1, wherein The openings include: A first opening defined on the first electrode side; and A second opening connected to the first opening and having a diameter larger than that of the first opening.

4. The apparatus for injecting gas according to claim 3, wherein The first opening has a diameter of 1 mm to 3 mm.

5. The apparatus for injecting gas according to claim 3, wherein, The second opening has a diameter of 10 mm to 14 mm.

6. The apparatus for ejecting gas according to claim 3, wherein The openings further include a third opening defined between the first opening and the second opening to connect the first opening and the second opening.

7. The apparatus for injecting gas according to claim 6, wherein The third opening has a cross-section that gradually increases in the direction toward the second opening.

8. The apparatus for injecting gas according to claim 3, wherein The second opening has a diameter of 25 mm to 75 mm.

9. The apparatus for ejecting gas according to claim 1, wherein, The second electrode has a thickness of 35 mm to 100 mm.

10. The apparatus for injecting gas according to claim 1, wherein, The openings are arranged at a distance of 12 mm to 20 mm.

11. The device for injecting gas according to claim 3, wherein, The first opening and the second opening have different lengths from each other.

12. The apparatus for ejecting gas according to claim 11, wherein, The first opening has a length larger than that of the second opening.

13. The apparatus for injecting gas according to claim 11, wherein, The second opening has a length larger than that of the first opening.

14. An apparatus for processing a substrate, comprising: A chamber; A substrate support device disposed in the chamber to support a substrate loaded into the chamber; The apparatus for ejecting gas according to any one of claims 1 to 13, the apparatus for ejecting gas being disposed in the chamber to eject gas toward the substrate support device; And A power supply device connected to the apparatus for ejecting gas to supply power to the apparatus for ejecting gas.

15. The apparatus for processing a substrate according to claim 14, wherein, The power supply device is connected to the second electrode to supply power to the second electrode.

16. The apparatus for processing a substrate according to claim 14, wherein, The power supply device supplies power to the first electrode and the second electrode.

17. A method for depositing a thin film by using the apparatus for processing a substrate according to claim 14, wherein, By supplying a first gas via the first gas supply path and a second gas via the second gas supply path, a thin film is deposited on the substrate.

18. The method according to claim 17, wherein, By generating plasma between the first electrode and the second electrode and generating plasma in the second electrode, the thin film is deposited on the substrate.

19. The method according to claim 17, wherein, By generating plasma between the second electrode and the substrate support device, the thin film is deposited on the substrate.

20. The method according to claim 17, wherein, By supplying at least one of the first gas and the second gas and using a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method, the thin film is deposited on the substrate.

21. The method according to claim 17, wherein, The thin film includes at least one of an IZO thin film in which indium (In) is doped into zinc oxide (ZnO), a GZO thin film in which gallium (Ga) is doped into zinc oxide (ZnO), an IGZO thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO), a thin film having a high dielectric constant (high-K), a silicon dioxide (SiO2) thin film, and a silicon nitride (SiN) thin film.

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