Composition, preparation method of film, photoelectric device and electronic equipment

Abstract

The invention provides a composition, a preparation method of a film, a photoelectric device and electronic equipment thereof. The composition comprises a polar solvent, a non-polar solvent and nanoparticles. The polar solvent and the non-polar solvent are added into the nano-particles, so that the effect of dispersing the nano-particles can be achieved, collision among the nano-particles caused by intermolecular interaction is reduced, the phenomena of agglomeration and the like among the nano-particles are unlikely to occur, and the nano-particles are convenient to use.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and particularly to a composition, a preparation method of a thin film, an optoelectronic device and an electronic device thereof. Background Art

[0002] Nanoparticles, also known as nano dust or nano powder, refer to microscopic particles on the nanometer scale. It is defined as particles with at least one dimension less than 100 nanometers.

[0003] Nanoparticles below 100 nm often aggregate into secondary particles due to their large specific surface area, thereby reducing the total surface energy or interfacial energy of the system. Since the aggregated secondary particles need to be redispersed during use, it brings inconvenience to the use process and needs to be improved. Summary of the Invention

[0004] Embodiments of the present application provide a composition, a preparation method of a thin film, an optoelectronic device and an electronic device thereof, which can solve the technical problem of aggregation of nanoparticles below 100 nm.

[0005] In a first aspect, embodiments of the present application provide a composition, including a polar solvent, a non-polar solvent and nanoparticles.

[0006] In a second aspect, embodiments of the present application provide a preparation method of a thin film, including the steps of:

[0007] Applying a cleaning agent to the heat-treated functional material pre-film layer to obtain a thin film;

[0008] wherein the material of the functional material pre-film layer includes one or more of a hole injection material, a hole transport material, a P-type semiconductor material, quantum dots, an electron transport material and an electron injection material, an N-type semiconductor material;

[0009] The cleaning agent includes a polar solvent and a non-polar solvent.

[0010] In a second aspect, embodiments of the present application provide an optoelectronic device, including:

[0011] A first electrode and a second electrode disposed opposite to each other; and

[0012] A functional layer disposed between the first electrode and the second electrode;

[0013] wherein the functional layer includes a plurality of stacked functional sub-layers, and at least one of the functional sub-layers is prepared by the preparation method of the thin film as described above.

[0014] In a third aspect, embodiments of the present application provide an optoelectronic device, including:

[0015] A first electrode and a second electrode which are oppositely arranged; and

[0016] A functional layer disposed between the first electrode and the second electrode;

[0017] Wherein, the functional layer includes a plurality of functionally sub - layers stacked, and at least one of the functionally sub - layers is prepared by the preparation method of the thin film as described above.

[0018] In a fourth aspect, an embodiment of the present application provides an electronic device, including the thin film prepared by the preparation method of the thin film as described above, or the optoelectronic device as described above.

[0019] Advantageous effects of the embodiments of the present application:

[0020] In the embodiments of the present application, by adding a polar solvent and a non - polar solvent to the nanoparticles, the function of dispersing the nanoparticles can be achieved, reducing the collisions between the nanoparticles caused by intermolecular interactions, and further making it difficult for the nanoparticles to agglomerate and other phenomena, which is convenient for use. Description of the Drawings

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0022] Figure 1 It is a schematic structural diagram of an embodiment of the optoelectronic device in the present application. Description of the Drawings:

[0024] 1. Anode; 2. Hole transport layer; 3. Excitation layer; 4. Electron transport layer; 5. Cathode. Detailed Embodiments

[0025] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described here are only used to illustrate and explain the present application, and are not used to limit the present application.

[0026] In this application, unless otherwise specified, the orientation terms such as "upper" and "lower" generally refer to the upper and lower directions in the actual use or working state of the device, specifically the drawing directions in the attached drawings; while "inner" and "outer" refer to the outline of the device. Additionally, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels without imposing numerical requirements or establishing an order.

[0027] In this application, "and / or" describes the association relationship of associated objects and indicates that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Here, A and B can be singular or plural.

[0028] In this application, "at least one" means one or more, and "a plurality" means two or more. "At least one kind", "at least one of the following items (pieces)" or similar expressions refer to any combination of these items, including any combination of single items (pieces) or plural items (pieces). For example, "at least one of a, b, or c", or "at least one of a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0029] In this application, when forming another layer "on" a certain layer, the so-called "on" is a broad concept, which can mean that the formed another layer is adjacent to a certain layer, or there can be other spacer structure layers between the other layer and a certain layer. For example, when forming a second electrode "on" the first carrier functional layer, the so-called "on" can mean that the formed second electrode is adjacent to the first carrier functional layer, or there can be other spacer structure layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0030] The various embodiments of this application can exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the description of the range has specifically disclosed all possible sub-ranges and the individual values within that range. For example, it should be considered that the description of the range from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and the individual numbers within that range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0031] Term definition:

[0032] P-type semiconductor materials are also known as hole-type semiconductors, referring to P-type semiconductors that conduct electricity mainly through holes. N-type semiconductor materials are also known as electron-type semiconductors, referring to N-type semiconductors that conduct electricity mainly through electrons.

[0033] The technical solution of this application is as follows:

[0034] In a first aspect, an embodiment of this application provides a composition, including a polar solvent, a non-polar solvent, and nanoparticles. Nanoparticles refer to particles with at least one dimension less than 100 nanometers.

[0035] By mixing the nanoparticles with the polar solvent and the non-polar solvent, the degree of dispersion between the nanoparticles is improved, the distance between the nanoparticles is increased, and the collisions between the nanoparticles caused by intermolecular forces are reduced, making it difficult for the nanoparticles to agglomerate and facilitating use.

[0036] In some embodiments, the polar solvent is an organic solvent with a dielectric constant greater than or equal to 4; and / or

[0037] The non-polar solvent is an organic solvent with a dielectric constant less than or equal to 3; and / or

[0038] The nanoparticles include one or more metal oxides of Group IVA and Group IVB, and non-metal oxides of Group IVA and Group IVB.

[0039] In some embodiments, the polar solvent is selected from one or more of methanol, ethanol, isopropanol, ethyl acetate, acetic acid, chloroform, and ether; and / or

[0040] The non-polar solvent is selected from one or more of cyclohexane, hexane, petroleum ether, pentane, carbon tetrachloride, isooctane, toluene, and benzene; and / or

[0041] The nanoparticles are selected from oxides of Group IVA metals and Group IVB metals with an average particle size of 1-10 nm or non-metal oxides with an average particle size of 1-10 nm; optionally, the oxides of Group IVA and Group IVB metals are selected from one or more of tin dioxide and titanium dioxide, and the non-metal oxide is selected from silicon dioxide.

[0042] In some embodiments, the volume ratio of the polar solvent to the non-polar solvent is 1:(4-19); and / or

[0043] The concentration of the nanoparticles in the composition is 1-3 mg / mL.

[0044] In a second aspect, an embodiment of this application provides a method for preparing a thin film, including the steps of:

[0045] Applying a cleaning agent to a prefabricated film layer to obtain a thin film;

[0046] Among them, the material of the prefabricated film layer includes one or more of P-type semiconductor materials, quantum dots, and N-type semiconductor materials;

[0047] The cleaning agent includes a polar solvent and a non-polar solvent.

[0048] By applying the cleaning agent to the prefabricated film layer, when the material of the prefabricated film layer is a P-type semiconductor material, the cleaning agent can remove the uncrosslinked organic molecules on the surface of the prefabricated film layer; when the material of the prefabricated film layer is a quantum dot or an N-type semiconductor material, the cleaning agent can remove the dangling bonds on the surface of the prefabricated film layer; thereby reducing the density of surface defects of the prefabricated film layer and playing a role in suppressing exciton quenching on the film surface. The advantage of using both a polar solvent and a non-polar solvent in the cleaning agent is that: according to the principle of similar solubility, since the interaction between the non-polar solvent and the material of the prefabricated film layer is small, when using the non-polar solvent alone for cleaning, it cannot effectively remove the organic molecules and dangling bonds on the surface of the material of the heat-treated prefabricated film layer, and cannot achieve an ideal cleaning effect. Therefore, the polar solvent and the non-polar solvent are mixed, and the removal effect is improved by the polar solvent, which is beneficial to reducing the density of surface defects of the film. In addition, it can also avoid the loss caused by using the polar solvent alone to the material of the heat-treated prefabricated film layer.

[0049] In some embodiments, the volume ratio of the polar solvent to the non-polar solvent is 1:(4 - 19); and / or

[0050] The polar solvent is an organic solvent with a dielectric constant greater than or equal to 4; and / or

[0051] The non-polar solvent is an organic solvent with a dielectric constant less than or equal to 3.

[0052] The polar solvent is mixed with the non-polar solvent in a relatively small proportion to ensure that the surface of the heat-treated functional material is not damaged, and at the same time, the concentration of the polar solvent is adjusted by controlling the addition amount of the non-polar solvent, so as to achieve an ideal cleaning effect.

[0053] In some embodiments, the polar solvent is selected from one or more of methanol, ethanol, isopropanol, ethyl acetate, acetic acid, chloroform, and ether; and / or

[0054] The non-polar solvent is selected from one or more of cyclohexane, hexane, petroleum ether, pentane, carbon tetrachloride, isooctane, toluene, and benzene.

[0055] In some embodiments, the cleaning agent further includes cleaning particles, and the cleaning particles include one or more of metal oxides of Group IVA and Group IVB and non-metal oxides of Group IVA and Group IVB.

[0056] In some embodiments, the cleaning particles are selected from the oxides of Group IVA metals and Group IVB metals with an average particle size of 1-10 nm or the non-metal oxides with an average particle size of 1-10 nm; optionally, the oxides of Group IVA and Group IVB metals are selected from one or more of tin dioxide and titanium dioxide, and the non-metal oxide is selected from silicon dioxide.

[0057] By selecting compounds with a certain particle size and special type, the ability of the cleaning agent to remove surface dangling bonds and uncrosslinked organic molecules is further improved. At the same time, substances such as silicon dioxide, tin dioxide, and titanium dioxide with an average particle size of 1-10 nm can be industrially produced at a relatively low cost.

[0058] In some embodiments, the step of applying the cleaning agent to the prefabricated film layer is specifically: applying the cleaning agent to the prefabricated film layer by solution processing to obtain a thin film;

[0059] Among them, the solution processing method includes spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating. The rotation speed of the spin coating method is 6000-8000 rpm / min. Preferably, the cleaning agent is applied to the prefabricated film layer by spin coating at a rotation speed of 6000-8000 rpm / min.

[0060] By spin coating the cleaning agent including cleaning particles at a relatively high rotation speed, a better centrifugal force can be provided for the cleaning agent to sweep away surface dangling bonds and uncrosslinked organic molecules and improve the cleaning effect. If the rotation speed is too high, the centrifugal force of the cleaning agent will be too large, thus damaging the surface of the prefabricated film layer.

[0061] In some other embodiments, the concentration of the cleaning particles in the cleaning agent is 1-3 mg / mL.

[0062] Setting the concentration of the cleaning particles to 1-3 mg / mL is not likely to result in the situation where, due to the low concentration of the cleaning particles, the interaction with the surface dangling bonds and uncrosslinked organic molecules is affected, and thus the cleaning effect cannot be improved. Nor is it likely to result in a large amount of residue on the surface of the heat-treated functional material due to the high concentration of the cleaning particles.

[0063] In some embodiments, after applying the cleaning agent to the heat-treated functional material and before obtaining the thin film, the following steps are further included:

[0064] Heat-treat the prefabricated film layer to which the cleaning agent is applied.

[0065] Through heat treatment, the cleaning agent remaining in the cleaning process is removed from the prefabricated film layer after heat treatment, and the damage to the prefabricated film layer caused by the polar solvent in the remaining cleaning agent is minimized as much as possible. The heat treatment temperature and time are preferably such that the polar solvent in the cleaning agent can be quickly evaporated.

[0066] When the polar solvent is selected from one or more of methanol, ethanol, isopropanol, ethyl acetate, acetic acid, chloroform, and ether; and the non-polar solvent is selected from one or more of cyclohexane, hexane, petroleum ether, pentane, carbon tetrachloride, isooctane, toluene, and benzene, the heat treatment temperature is 80 - 150 °C, and the heat treatment time is 30 s - 120 s.

[0067] In some embodiments, the method for preparing the prefabricated film layer includes the steps of: depositing the material of the prefabricated film layer, and drying the deposited material of the prefabricated film layer to obtain the prefabricated film layer.

[0068] In a third aspect, the embodiments of the present application further provide an optoelectronic device, including:

[0069] A first electrode and a second electrode disposed opposite to each other; and

[0070] A functional layer disposed between the first electrode and the second electrode;

[0071] Wherein, the functional layer includes a plurality of stacked functional sub-layers, and at least one functional sub-layer is prepared by the method for preparing the thin film as described above.

[0072] In some embodiments, the functional layer includes an electronic functional layer, the electronic functional layer is prepared by the method for preparing the thin film as described above, the functional material is selected from one or more of inorganic electronic functional materials and organic electronic functional materials, the inorganic electronic functional materials are selected from one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials, and the organic electronic functional materials are selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives (PCBM); and / or

[0073] The functional layer includes a hole functional layer, which is prepared by the method for preparing the thin film as described above. The functional material is selected from 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro-NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives (PEDOT:PSS:s-MoO3), 4,4',One or more of 4'-tris(N-(m-tolyl)-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), doped graphene, undoped graphene, C60, copper phthalocyanine, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, and metal nitrides; and / or,

[0074] The functional layer includes an excitation layer, which is prepared by the method for preparing the thin film as described above. The functional materials include one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite semiconductor materials include doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs + ions, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of the following, X is a halogen anion, including Cl - 、Br - 、I - one or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of the following, X is a halogen anion, including Cl - 、Br - 、I - one or more of the following; and / or

[0075] The first electrode and the second electrode each independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode, or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, or BaF2 / Ca / Al. The material of the metal elemental electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrode includes an Au:Mg alloy electrode or an Ag:Mg alloy electrode.

[0076] In some embodiments, the hole functional layer includes a hole functional sub-layer, which can be a hole transport layer or a hole injection layer, and the hole functional sub-layer is prepared by the above-mentioned thin film preparation method; or the hole functional layer includes two stacked hole functional sub-layers, and the two hole functional sub-layers are a hole transport layer and a hole injection layer respectively.

[0077] In some embodiments, the electron functional layer includes an electron functional sub-layer, which can be an electron transport layer or an electron injection layer, and the electron functional sub-layer is prepared by the above-mentioned thin film preparation method; or the electron functional layer includes two stacked electron functional sub-layers, and the two electron functional sub-layers are an electron transport layer and an electron injection layer respectively.

[0078] In some embodiments, the functional layer includes a hole functional layer, an excitation layer, and an electron functional layer stacked in sequence. The optoelectronic device can be a normal optoelectronic device or an inverted optoelectronic device.

[0079] Fourthly, the embodiment of the present application also provides a preparation method of an optoelectronic device, for preparing the above-mentioned optoelectronic device, including the following steps:

[0080] Deposit the hole injection layer material on the anode, heat-treat the deposited hole injection layer material, apply a cleaning agent to the heat-treated hole injection layer material, and then heat-treat it to obtain the hole injection layer;

[0081] Deposit the hole transport layer material on the hole injection layer, heat-treat the deposited hole transport layer material, apply a cleaning agent to the heat-treated hole transport layer material, and then heat-treat it to obtain the hole transport layer;

[0082] Deposit the material of the excitation layer on the hole transport layer, perform heat treatment on the deposited excitation layer material, apply a cleaning agent to the heat-treated excitation material, and then perform heat treatment to obtain the light-emitting layer;

[0083] Deposit the electron transport layer material on the excitation layer, perform heat treatment on the deposited electron transport layer material, apply a cleaning agent to the heat-treated electron transport layer material, and then perform heat treatment to obtain the electron transport layer;

[0084] Deposit the electron injection layer material on the electron transport layer, perform heat treatment on the deposited electron injection layer material, apply a cleaning agent to the heat-treated electron injection layer material, and then perform heat treatment to obtain the electron injection layer;

[0085] Evaporate the material of the cathode onto the electron injection layer to obtain the cathode.

[0086] Encapsulate.

[0087] In some embodiments, the preparation method of the optoelectronic device may also be:

[0088] Deposit the electron injection layer material on the upper cathode, perform heat treatment on the deposited electron injection layer material, apply a cleaning agent to the heat-treated electron injection layer material, and then perform heat treatment to obtain the electron injection layer;

[0089] Deposit the electron transport layer material on the electron injection layer, perform heat treatment on the deposited electron transport layer material, apply a cleaning agent to the heat-treated electron transport layer material, and then perform heat treatment to obtain the electron transport layer;

[0090] Deposit the material of the excitation layer on the electron transport layer, perform heat treatment on the deposited excitation layer material, apply a cleaning agent to the heat-treated excitation layer material, and then perform heat treatment to obtain the light-emitting layer;

[0091] Deposit the hole transport layer material on the excitation layer, perform heat treatment on the deposited hole transport layer material, apply a cleaning agent to the heat-treated hole transport layer material, and then perform heat treatment. The film is the hole transport layer;

[0092] Deposit the hole injection layer material on the hole transport layer, perform heat treatment on the deposited hole injection layer material, apply a cleaning agent to the heat-treated hole injection layer material, and then perform heat treatment to obtain the hole injection layer;

[0093] Evaporate the material of the anode onto the hole injection layer to obtain the anode.

[0094] Encapsulate.

[0095] In some embodiments, the deposition method can be achieved by using well-known technical means in the art, specifically:

[0096] The excitation layer can be formed by chemical vapor deposition, successive ionic layer adsorption and reaction, anodic oxidation, coprecipitation, and solution processing. Among them, chemical methods include, for example, chemical vapor deposition, successive ionic layer adsorption and reaction, anodic oxidation, electrolytic deposition, and coprecipitation.

[0097] The hole transport layer can be formed by physical coating methods. Physical coating methods include, for example, thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition; solution processing methods include, for example, spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating.

[0098] The electron transport layer can be formed by chemical vapor deposition, successive ionic layer adsorption and reaction, anodic oxidation, coprecipitation, and solution processing.

[0099] When the hole injection layer and the electron injection layer are organic molecular compounds, all of the above-listed methods can be used; when they are inorganic molecular compounds, solution processing methods can be used.

[0100] Specific processing methods and conditions can refer to common methods in the art and will not be elaborated here.

[0101] In a fifth aspect, an embodiment of the present application further provides an electronic device, including the thin film prepared by the method for preparing a thin film as described above, or the optoelectronic device as described above. The electronic device can be any electronic product with a display function. The electronic product includes, but is not limited to, a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0102] Thin Film Embodiment 1

[0103] An embodiment of the present application provides a thin film and a method for preparing the same. The method for preparing the thin film in this embodiment includes the following steps:

[0104] S1. Spin-coat a quantum dot solution of CdZnSe on a glass substrate, dry it to obtain a prefabricated film layer. Mix absolute ethanol and cyclohexane in a volume ratio of 1:9, and then dissolve silicon dioxide with a particle size of 5 nm in the mixed solution to obtain a cleaning agent with a silicon dioxide concentration of 2 mg / mL.

[0105] S2. Spin-coat the cleaning agent on the prefabricated film layer at a rotation speed of 7000 rpm, and then heat it at 100 °C for 1 minute to obtain a thin film.

[0106] Thin Film Example 2

[0107] An embodiment of the present application provides a thin film and a preparation method thereof. The preparation method of the thin film in this embodiment includes the following steps:

[0108] S1. On a glass substrate, spin-coat a PEDOT:PSS solution and dry it to obtain a prefabricated film layer. Mix absolute ethanol and cyclohexane in a volume ratio of 1:4, and then dissolve silicon dioxide with a particle size of 5 nm in the mixed solution to obtain a cleaning agent with a silicon dioxide concentration of 2 mg / mL;

[0109] S2. Spin-coat the cleaning agent on the prefabricated film layer at a rotation speed of 7000 rpm, and then heat it at 100 °C for 90 s to obtain a thin film.

[0110] Thin Film Example 3

[0111] An embodiment of the present application provides a thin film and a preparation method thereof. The preparation method of the thin film in this embodiment includes the following steps:

[0112] S1. On a glass substrate, spin-coat TFB and dry it to obtain a prefabricated film layer. Mix ethyl acetate and pentane in a volume ratio of 1:15, and then dissolve titanium dioxide with a particle size of 5 nm in the mixed solution to obtain a cleaning agent with a silicon dioxide concentration of 2 mg / mL;

[0113] S2. Spin-coat the cleaning agent on the prefabricated film layer at a rotation speed of 7000 rpm, and then heat it at 80 °C for 120 s to obtain a thin film.

[0114] Thin Film Example 4

[0115] An embodiment of the present application provides a thin film and a preparation method thereof. The preparation method of the thin film in this embodiment includes the following steps:

[0116] S1. On a glass substrate, spin-coat a ZnO-ethanol solution and dry it to obtain a prefabricated film layer. Mix toluene and cyclohexane in a volume ratio of 1:9, and then dissolve tin dioxide with a particle size of 5 nm in the mixed solution to obtain a cleaning agent with a silicon dioxide concentration of 2 mg / mL;

[0117] S2. Spin-coat the cleaning agent on the prefabricated film layer at a rotation speed of 7000 rpm, and then heat it at 110 °C for 80 s to obtain a thin film.

[0118] Thin Film Example 5

[0119] An embodiment of the present application provides a thin film and a preparation method thereof. The preparation method of the thin film in this embodiment includes the following steps:

[0120] S1. On a glass substrate, spin-coat a solution of LiF and dry it to obtain a prefabricated film layer. Mix ethanol and cyclohexane in a volume ratio of 1:9, and then dissolve silicon dioxide with a particle size of 5 nm in the mixed solution to obtain a cleaning agent with a silicon dioxide concentration of 2 mg / mL.

[0121] S2. Spin-coat the cleaning agent on the prefabricated film layer at a rotational speed of 7000 rpm, and then heat it at 100 °C for 1 minute to obtain a film.

[0122] Film Example 6

[0123] This application example provides a film and a preparation method thereof. The difference between the film preparation method in this example and that in Film Example 1 is as follows:

[0124] Replace step S1 with: On a glass substrate, spin-coat a quantum dot solution of CdZnSe and dry it to obtain a prefabricated film layer. Mix ethanol and cyclohexane in a volume ratio of 1:9 to obtain a cleaning agent.

[0125] Replace step S2 with: Spin-coat the cleaning agent on the prefabricated film layer at a rotational speed of 7000 rpm to obtain a film.

[0126] Film Example 7

[0127] This application example provides a film and a preparation method thereof. The difference between the film preparation method in this example and that in Film Example 1 is as follows:

[0128] Replace step S2 with: Spin-coat the cleaning agent on the prefabricated film layer at a rotational speed of 7000 rpm to obtain a film.

[0129] Film Comparative Example 1 - Film Comparative Example 5

[0130] The above comparative examples all provide a film, which are respectively the prefabricated film layers in Film Example 1 - Film Example 5.

[0131] Performance Test

[0132] Test the root mean square roughness of the films in Film Examples 1 - 7 and Film Comparative Examples 1 - 5 by atomic force microscope (AFM). The root mean square roughness refers to the roughness of the film surface, and the larger the value, the rougher the surface. The results are shown in Table 1:

[0133] Table 1:

[0134]

[0135]

[0136] As can be seen from Table 1:

[0137] By comparing Film Examples 1-5 with Film Comparative Examples 1-5, it can be known that the root mean square roughness of the film obtained after cleaning with the cleaning agent is smaller, and it has good cleaning effects for different semiconductor materials. This is mainly because the cleaning agent removes the dangling bonds and uncrosslinked organic molecules on the surface of the prefabricated film layer, thereby reducing the undulation degree of the film surface topography. As a result, the film can play a role in inhibiting exciton quenching.

[0138] By comparing Film Examples 1, 6, and 7 with Film Comparative Example 1, it can be known that adding silica and further heat-treating the cleaning agent can gradually promote the reduction of the film surface defect density. The reason is that: silica exists as a solute in the cleaning agent and can collide with the dangling bonds and uncrosslinked organic molecules on the surface of the film layer and then be removed, improving the cleaning effect; at the same time, heat treatment can minimize the damage of the polar solvent in the residual cleaning agent on the prefabricated film layer to the film layer.

[0139] Optoelectronic Device Example 1

[0140] An embodiment of the present application provides an optoelectronic device and a preparation method thereof. Refer to Figure 1 , the optoelectronic device includes an anode 1, a hole transport layer 2, an excitation layer 3, an electron transport layer 4, and a cathode 5 which are sequentially stacked.

[0141] The preparation method of the film includes the following steps:

[0142] S1. Provide a substrate of an ITO anode with a thickness of 80 nm, ultrasonically clean the substrate plated with ITO with acetone and ethanol for 15 min, then clean it again with deionized water, then dry it on a hot plate at 150 °C for 10 min, and finally perform ultraviolet light irradiation for 20 min to improve the ITO work function and surface energy;

[0143] S2. Mix absolute ethanol and cyclohexane in a volume ratio of 1:9 to obtain a cleaning agent;

[0144] S3. Spin-coat 8 mg / mL TFB at a rotation speed of 3000 rpm for 30 seconds, and then heat it at 120 °C for 10 minutes to obtain a hole transport layer, and spin-coat the cleaning agent on the hole transport layer at a rotation speed of 7000 rpm;

[0145] S4. Spin-coat 20 mg / mL CdZnSe quantum dot solution at a rotation speed of 2000 rpm for 30 seconds, and then heat it at 100 °C for 5 minutes to obtain a quantum dot light-emitting layer, and spin-coat the cleaning agent on the quantum dot light-emitting layer at a rotation speed of 7000 rpm;

[0146] S5. Spin-coat a 30 mg / mL ZnO-ethanol solution at a speed of 3000 rpm for 30 seconds, and then heat it at 100 °C for 15 minutes to obtain an electron transport layer. Spin-coat a cleaning agent on the electron transport layer at a speed of 7000 rpm to prepare a film.

[0147] S6. Through thermal evaporation, with the vacuum degree less than or equal to 3×10 -4 Pa, deposit Ag at a rate of 1 Å / second for 200 seconds to obtain a cathode with a thickness of 20 nm.

[0148] Optoelectronic device Example 2

[0149] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Example 1, the difference in the preparation method of the optoelectronic device in this embodiment is that:

[0150] Replace step S2 with: Mix anhydrous ethanol and cyclohexane in a volume ratio of 1:9, and then dissolve silicon dioxide with a particle size of 5 nm in the mixed solution to obtain a cleaning agent with a silicon dioxide concentration of 2 mg / mL.

[0151] Optoelectronic device Example 3

[0152] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Example 2, the difference in the preparation method of the optoelectronic device in this embodiment is that:

[0153] Replace step S3 with: Spin-coat 8 mg / mL TFB at a speed of 3000 rpm for 30 seconds, and then heat it at 120 °C for 10 minutes to obtain a hole transport layer. Spin-coat a cleaning agent on the hole transport layer at a speed of 7000 rpm, and then heat it at 100 °C for 1 minute;

[0154] Replace step S4 with: Spin-coat a 20 mg / mL CdZnSe quantum dot solution at a speed of 2000 rpm for 30 seconds, and then heat it at 100 °C for 5 minutes to obtain a quantum dot light-emitting layer. Spin-coat a cleaning agent on the quantum dot light-emitting layer at a speed of 7000 rpm, and then heat it at 100 °C for 1 minute;

[0155] Replace step S5 with: Spin-coat a 30 mg / mL ZnO-ethanol solution at a speed of 3000 rpm for 30 seconds, and then heat it at 100 °C for 15 minutes to obtain an electron transport layer. Spin-coat a cleaning agent on the electron transport layer at a speed of 7000 rpm, and then heat it at 100 °C for 1 minute to prepare a film.

[0156] Optoelectronic device Example 4

[0157] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Embodiment 3, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: mixing absolute ethanol and cyclohexane in a volume ratio of 1:4 to obtain a cleaning agent.

[0158] Optoelectronic device Embodiment 5

[0159] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Embodiment 3, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: mixing absolute ethanol and cyclohexane in a volume ratio of 1:15 to obtain a cleaning agent.

[0160] Optoelectronic device Embodiment 6

[0161] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Embodiment 3, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: mixing ethyl acetate and cyclohexane in a volume ratio of 1:9 to obtain a cleaning agent.

[0162] Optoelectronic device Embodiment 7

[0163] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Embodiment 3, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: mixing toluene and pentane in a volume ratio of 1:9 to obtain a cleaning agent.

[0164] Optoelectronic device Embodiment 8

[0165] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Embodiment 3, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: mixing absolute ethanol and cyclohexane in a volume ratio of 1:9, and then dissolving titanium dioxide with a particle size of 10 nm in the mixed solution to obtain a cleaning agent with a titanium dioxide concentration of 2 mg / mL.

[0166] Optoelectronic device Embodiment 9

[0167] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Embodiment 3, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: mixing absolute ethanol and cyclohexane in a volume ratio of 1:4, and then dissolving 5-nm silica in the mixed solution to obtain a cleaning agent;

[0168] Replace step S3 with: Spin-coat 8 mg / mL TFB at 3000 rpm for 30 seconds, then heat at 120 °C for 10 minutes to obtain a hole transport layer. Spin-coat a cleaning agent on the hole transport layer at 7000 rpm, and then heat at 90 °C for 1 minute;

[0169] Replace step S4 with: Spin-coat 20 mg / mL CdZnSe quantum dot solution at 2000 rpm for 30 seconds, then heat at 100 °C for 5 minutes to obtain a quantum dot light-emitting layer. Spin-coat a cleaning agent on the quantum dot light-emitting layer at 7000 rpm, and then heat at 90 °C for 1 minute;

[0170] Replace step S5 with: Spin-coat 30 mg / mL ZnO-ethanol solution at 3000 rpm for 30 seconds, then heat at 100 °C for 15 minutes to obtain an electron transport layer. Spin-coat a cleaning agent on the electron transport layer at 7000 rpm, and then heat at 90 °C for 1 minute to prepare a thin film.

[0171] Optoelectronic device Example 10

[0172] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Example 6, the difference in the preparation method of the optoelectronic device in this embodiment is that:

[0173] Replace step S3 with: Spin-coat 8 mg / mL TFB at 3000 rpm for 30 seconds, then heat at 120 °C for 10 minutes to obtain a hole transport layer. Spin-coat a cleaning agent on the hole transport layer at 7000 rpm, and then heat at 100 °C for 90 seconds;

[0174] Replace step S4 with: Spin-coat 20 mg / mL CdZnSe quantum dot solution at 2000 rpm for 30 seconds, then heat at 100 °C for 5 minutes to obtain a quantum dot light-emitting layer. Spin-coat a cleaning agent on the quantum dot light-emitting layer at 7000 rpm, and then heat at 100 °C for 90 seconds;

[0175] Replace step S5 with: Spin-coat 30 mg / mL ZnO-ethanol solution at 3000 rpm for 30 seconds, then heat at 100 °C for 15 minutes to obtain an electron transport layer. Spin-coat a cleaning agent on the electron transport layer at 7000 rpm, and then heat at 100 °C for 90 seconds to prepare a thin film.

[0176] Optoelectronic device Example 11

[0177] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Embodiment 3, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: dissolving silicon dioxide with a particle size of 5 nm in ethanol to obtain a cleaning agent with a silicon dioxide concentration of 2 mg / mL.

[0178] Optoelectronic device Example 12

[0179] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Embodiment 3, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: using cyclohexane as a cleaning agent.

[0180] Optoelectronic device Example 13

[0181] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Embodiment 3, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: using absolute ethanol as a cleaning agent.

[0182] Optoelectronic device Example 14

[0183] An optoelectronic device and a preparation method thereof provided by an embodiment of the present application. Compared with the preparation method of the optoelectronic device in Embodiment 1, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: using absolute ethanol as a cleaning agent.

[0184] Optoelectronic device Comparative Example 1

[0185] An optoelectronic device and a preparation method thereof provided by this comparative example. Compared with the preparation method of the optoelectronic device in Embodiment 2, the difference in the preparation method of the optoelectronic device in this embodiment is that step S2 is replaced with: spin-coating 8 mg / mL TFB at a rotation speed of 3000 rpm for 30 seconds, and then heating at 120 °C for 10 minutes to obtain a hole transport layer, spin-coating a cleaning agent on the hole transport layer at a rotation speed of 7000 rpm, and then heating at 100 °C for 1 minute;

[0186] Optoelectronic device Comparative Example 2

[0187] An optoelectronic device and a preparation method thereof provided by this comparative example. Compared with the preparation method of the optoelectronic device in Embodiment 2, the difference in the preparation method of the optoelectronic device in this embodiment is that step S4 is replaced with: spin-coating 20 mg / mL CdZnSe quantum dot solution at a rotation speed of 2000 rpm for 30 seconds, and then heating at 100 °C for 5 minutes to obtain a quantum dot light-emitting layer, spin-coating a cleaning agent on the quantum dot light-emitting layer at a rotation speed of 7000 rpm, and then heating at 100 °C for 1 minute.

[0188] Optoelectronic device Comparative Example 3

[0189] A photoelectric device and its preparation method provided in this comparative example. Compared with the preparation method of the photoelectric device in Example 2, the difference in the preparation method of the photoelectric device in this example is that step S5 is replaced with: spin-coating a 30 mg / mL ZnO-ethanol solution at a rotation speed of 3000 rpm for 30 seconds, and then heating at 100 °C for 15 minutes to obtain an electron transport layer. Spin-coat a cleaning agent on the electron transport layer at a rotation speed of 7000 rpm, and then heat at 100 °C for 1 minute to obtain a thin film.

[0190] Photoelectric device Comparative Example 4

[0191] A photoelectric device and its preparation method provided in this comparative example. The preparation method of the photoelectric device in this example includes the following steps:

[0192] S1. After the ITO is treated with UVO for 15 minutes, spin-coat PEDOT:PSS (2 wt%) on the ITO substrate at a rotation speed of 5000 for 30 seconds, and then heat at 150 °C for 15 minutes;

[0193] S2. Spin-coat 8 mg / mL TFB at a rotation speed of 3000 rpm / min for 30 seconds, and then heat at 120 °C for 10 minutes;

[0194] S3. Spin-coat a 20 mg / mL CdZnSe quantum dot solution at a rotation speed of 2000 rpm / min for 30 seconds, and then heat at 100 °C for 5 minutes;

[0195] S4. Spin-coat a 30 mg / mL ZnO-ethanol solution at a rotation speed of 3000 rpm / min for 30 seconds, and then heat at 100 °C for 15 minutes;

[0196] S5. Through thermal evaporation, the vacuum degree is less than or equal to 3×10 -4 Pa, evaporate Ag at a speed of 1 Å / second for 200 seconds, with a thickness of 20 nm.

[0197] Performance test

[0198] After placing the photoelectric devices of Examples 1-14 and Comparative Examples 1-4 for 1 hour and 1000 hours, perform maximum brightness, lifetime T95, lifetime T95@1000 nit, and current efficiency tests. The test results are shown in Table 1.

[0199] Among them, the method for testing the maximum brightness is: using a Fosda FPD optical property measurement device, and measuring the maximum brightness through an efficiency test system built by controlling a QE PRO spectrometer, a Keithley 2400, and a Keithley 6485 with LabView.

[0200] The test methods for the lifespan T95 and the lifespan T95@1000nit are as follows: in CDA gas, under the drive of a constant current or voltage, the time taken for the brightness of the device to decay to a certain proportion of the maximum brightness is measured. The time when the brightness decays to 95% of the maximum brightness is defined as T95, and this lifespan is the measured lifespan. To shorten the lifespan test cycle, the device lifespan test is usually carried out by accelerating the device aging at high brightness, and the lifespan at low brightness is obtained by fitting through the decay fitting formula. For example, the lifespan at 1000 nits is denoted as T95@1000nits, and the calculation formula is:

[0201]

[0202] Among them, T95 L is the lifespan at low brightness, generally taking the lifespan at 1000 nits. T95 H is the lifespan at high brightness, that is, the measured lifespan. L H is the maximum brightness to which the device is accelerated. L L is generally 1000 nits, A is the acceleration factor, taking 1.7. Among them, the constant current is 1 mA.

[0203] The test method for current efficiency is as follows: scan from 0 V to 7 V with a wavelength of 0.2 V, and use a Keithley source meter and an integrating sphere to monitor the current (A) and brightness (nit / m 2 ), respectively, to obtain the current efficiency test value.

[0204] Table 1:

[0205]

[0206]

[0207] It can be seen from Table 1 that:

[0208] Compared with the devices of Comparative Examples 1-4, the optoelectronic devices of Examples 1-10 have a significant improvement in the maximum brightness, lifespan T95, lifespan T95@1000nit, and current efficiency after being placed for 1 hour and 1000 hours; especially after being placed for 1000 hours, the optoelectronic devices of Examples 1-10 only show a small decline in all aspects, and the decline is significantly smaller than that of Comparative Examples 1-4. It can be seen that each film layer of the optoelectronic devices in the examples can significantly improve the long-term storage stability of the devices.

[0209] Comparing Examples 1-3, it is not difficult to find that with the addition of nano-particle silica, the devices in Example 2 have significant improvements in various indicators. The reason is that nano-particles are beneficial to removing dangling bonds and uncrosslinked organic molecules on the surface of the film layer, reducing the density of surface defects of the film layer, improving the interface quality between film layers, enhancing the carrier injection balance and suppressing exciton quenching, ultimately improving the performance of the device. At the same time, removing the cleaning agent by heat treatment can effectively reduce the cleaning agent residue on the surface of the film layer and reduce the damage to the film layer caused by the polar solvent in the cleaning agent.

[0210] Comparing Examples 11-14 with Example 3, the performance of Examples 11-14 is significantly worse than that of Example 3. Especially for the lifetime T95@1000nit, the decline rates after 1 hour and 1000 hours of placement are significantly higher than those of Example 3. The reason is that using a polar solvent alone as a cleaning agent will damage the surface of the film layer, resulting in a decline in various performances.

[0211] Comparing Comparative Examples 1-3 with Examples 1-3 and Comparative Example 4, in Comparative Examples 1-3, only a single film layer in the device was cleaned, and the performance of the devices is significantly worse than that of Examples 1-3. That is to say, the cleaning agent with the same composition has a good cleaning effect on different film layers. The cleaning agent can be well applied to the cleaning of different film layers, and there is no need to use cleaning agents with different compositions for different film layers, which is convenient for use. Comparative Example 4 is a device in the related art, and the performance of Comparative Examples 1-3 is significantly better than that of Comparative Example 4. That is to say, cleaning a single film layer is beneficial to improving the performance of the device.

[0212] The above has introduced the embodiments of the present application in detail. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application. At the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A composition, characterized in that, It includes a polar solvent, a non-polar solvent, and nanoparticles.

2. The composition according to claim 1, characterized in that, The polar solvent is an organic solvent with a dielectric constant greater than or equal to 4; and / or The non-polar solvent is an organic solvent with a dielectric constant less than or equal to 3; and / or The nanoparticles include one or more of metal oxides of Group IVA and Group IVB, and non-metal oxides of Group IVA and Group IVB.

3. The composition according to claim 2, wherein The polar solvent is selected from one or more of methanol, ethanol, isopropanol, ethyl acetate, acetic acid, chloroform, and ether; and / or The non-polar solvent is selected from one or more of cyclohexane, hexane, petroleum ether, pentane, carbon tetrachloride, isooctane, toluene, and benzene; and / or The nanoparticles are selected from oxides of Group IVA metals and Group IVB metals with an average particle size of 1 - 10 nm or non-metal oxides with an average particle size of 1 - 10 nm; optionally, the oxides of Group IVA and Group IVB metals are selected from one or more of tin dioxide and titanium dioxide, and the non-metal oxide is selected from silicon dioxide.

4. The composition according to any one of claims 1 to 3, characterized in that, The volume ratio of the polar solvent to the non-polar solvent is 1:(4 - 19); and / or The concentration of the nanoparticles in the composition is 1 - 3 mg / mL.

5. A method for preparing a thin film, characterized in that, It includes the steps of: Providing a prefabricated film layer; Applying a cleaning agent to the prefabricated film layer to obtain a thin film; Wherein, the material of the prefabricated film layer includes one or more of P-type semiconductor materials, quantum dots, and N-type semiconductor materials; The cleaning agent includes a polar solvent and a non-polar solvent.

6. The method for preparing the thin film according to claim 5, wherein The volume ratio of the polar solvent to the non-polar solvent is 1:(4 - 19); and / or The polar solvent is an organic solvent with a dielectric constant greater than or equal to 4; and / or The non-polar solvent is an organic solvent with a dielectric constant less than or equal to 3.

7. The method for preparing the thin film according to claim 6, characterized in that, The polar solvent is selected from one or more of methanol, ethanol, isopropanol, ethyl acetate, acetic acid, chloroform, and ether; and / or The non-polar solvent is selected from one or more of cyclohexane, hexane, petroleum ether, pentane, carbon tetrachloride, isooctane, toluene, and benzene.

8. The method for preparing a thin film according to claim 7, wherein The cleaning agent further includes cleaning particles, and the cleaning particles include one or more of metal oxides of Group IVA and Group IVB, and non-metal oxides of Group IVA and Group IVB.

9. The method for preparing a thin film according to claim 8, characterized in that, The cleaning particles are selected from oxides of Group IVA metals and Group IVB metals with an average particle size of 1 - 10 nm or non-metal oxides with an average particle size of 1 - 10 nm; optionally, the oxides of Group IVA and Group IVB metals are selected from one or more of tin dioxide and titanium dioxide, and the non-metal oxide is selected from silicon dioxide.

10. The method for preparing the thin film according to claim 8, wherein, The step of applying the cleaning agent to the prefabricated film layer is specifically: applying the cleaning agent to the prefabricated film layer by using one of the solution processing methods to obtain a thin film; Wherein, the solution processing methods include spin coating, printing, inkjet printing, doctor blading, printing, dip coating, soaking, spraying, roll coating, casting, slot die coating, and bar coating, and the rotation speed of the spin coating method is 6000 - 8000 rpm / min.

11. The method for preparing a thin film according to claim 8, wherein, The concentration of the cleaning particles in the cleaning agent is 1 - 3 mg / mL.

12. The method for preparing the thin film according to claim 5, wherein After applying the cleaning agent to the heat-treated functional material, before obtaining the thin film, the following steps are further included: Heat-treat the preformed film layer to which the cleaning agent is applied.

13. The method for preparing a thin film according to claim 11, wherein The heat treatment temperature is 80 - 150 °C, and the heat treatment time is 30 s - 120 s.

14. The method for preparing a thin film according to claim 5, characterized in that, The preparation method of the preformed film layer includes the steps of: depositing the material of the preformed film layer, and drying the deposited material of the preformed film layer to obtain the preformed film layer.

15. An optoelectronic device, characterized in that, It includes: A first electrode and a second electrode arranged oppositely; And A functional layer disposed between the first electrode and the second electrode; Wherein, the functional layer includes a plurality of stacked functional sub-layers, and at least one of the functional sub-layers is prepared by the preparation method of the thin film according to any one of claims 5 - 14.

16. The optoelectronic device according to claim 15, wherein The functional layer includes an electronic functional layer, the electronic functional layer is prepared by the preparation method of the thin film according to any one of claims 5 - 14, the functional material is selected from one or more of inorganic electronic functional materials and organic electronic functional materials, the inorganic electronic functional materials are selected from one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB - VIA group semiconductor materials, IIIA - VA group semiconductor materials and IB - IIIA - VIA group semiconductor materials, and the organic electronic functional materials are selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, fullerene derivatives (PCBM); and / or The functional layer includes a hole functional layer, and the hole functional layer is prepared by the preparation method of the thin film according to any one of claims 5-14. The functional material is selected from 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro-NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives (PEDOT:PSS:s-MoO3), 4,4',One or more of 4'-tris(N-(m-tolyl)-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), doped graphene, undoped graphene, C60, copper phthalocyanine, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, and metal nitrides; and / or, The functional layer includes an excitation layer, which is prepared by the preparation method of the thin film according to any one of claims 5-14. The functional material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX3, where A is a Cs + ion, and M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of Sn, Cu, Ni, Cd, Cr, Mn, Co, Fe, Ge, Yb, Eu, X is a halogen anion, including one or more of Cl - 、Br - 、I - ; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including one or more of Pb, Sn, Cu, Ni, Cd, Cr, Mn, Co, Fe, Ge, Yb, Eu, X is a halogen anion, including one or more of Cl 2+ 、Sn 2+ 、Cu 2+ 、Ni 2 + 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ ; and / or - 、Br - 、I - one or more of Br, I; and / or The first electrode and the second electrode each independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode or an alloy electrode. The materials of the doped metal oxide electrodes include one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, cadmium-doped zinc oxide. The composite electrodes include AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al. The materials of the metal elemental electrodes include one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba. The alloy electrodes include Au:Mg alloy electrodes or Ag:Mg alloy electrodes.

17. An electronic device, characterized in that, It includes the thin film prepared by the preparation method of the thin film according to any one of claims 5 - 14, or the optoelectronic device according to claim 15 or 16.

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