Electronic load and test system

Abstract

The invention provides an electronic load and a test system, and the electronic load comprises at least two load modules which are connected in series and are connected with a to-be-tested power supply; wherein each load module comprises at least two load branches which are arranged in parallel, each load branch comprises a transistor and a load resistor, and the load resistor is connected with a source electrode of the transistor; and the control module is connected with the grid electrodes of the at least two transistors in each load module and is used for controlling the on-off state of the transistors.

Description

Technical Field

[0001] The present disclosure relates to the technical field of power supply detection, and particularly to an electronic load and a test system. Background Art

[0002] In the tests of power electronics products such as power supplies, batteries, and chargers, it is usually necessary to use an electronic load to simulate the load in a real environment to test the performance of power electronics products.

[0003] With the development of electronic technology, the index performance of various electronic products has been gradually improved. The maximum transient current change amount of the electronic load in the related technology is 20 A / us, which is difficult to meet the test requirements of some special scenarios. Summary of the Invention

[0004] To overcome the problems existing in the related technology, the present disclosure provides an electronic load and a test system.

[0005] According to the first aspect of the embodiments of the present disclosure, an electronic load is provided, including:

[0006] At least two load modules, which are connected in series, and at least two load modules are connected to the power supply to be tested;

[0007] Wherein, each load module includes: at least two load branches connected in parallel, each load branch includes a transistor and a load resistor, and the load resistor is connected to the source electrode of the transistor;

[0008] A control module, which is connected to the gates of at least two transistors in each load module, and is used to control the on-off state of the transistors.

[0009] Optionally, the control module is used to output control signals to the gates of the transistors in at least two load modules; wherein, the control signals output by the control module to the transistors in at least two load modules are independent control signals;

[0010] The control signals output by the control module to at least two transistors in the same load module are used to turn on at least one transistor in the load module.

[0011] Optionally, the voltage of the power supply to be tested is less than or equal to a first voltage threshold, and the transistor is a gallium nitride (GaN) transistor; or, the voltage of the power supply to be tested is greater than or equal to a second voltage threshold, and the transistor is a silicon carbide (SiC) transistor; wherein, the first voltage threshold is less than the second voltage threshold.

[0012] Optionally, the electronic load further includes:

[0013] The first sampling module, the input end of the first sampling module is connected to the load module, and the output end of the first sampling module is connected to the control module, which is used to collect the current signal of the load module and output the current signal to the control module;

[0014] The second sampling module, the input end of the second sampling module is connected to at least two load modules, and the output end of the second sampling module is connected to the control module, which is used to collect the voltage signals of at least two load modules and input the voltage signals to the control module;

[0015] The control module is used to adjust the on-off state of the transistor in real time according to the current signal and / or voltage signal.

[0016] Optionally, the at least two load modules include:

[0017] The first load module and at least one second load module; wherein, the first load module is connected to the grounding end; at least one second load module is connected in series between the power supply under test and the first load module;

[0018] Each second load module includes: at least two first conversion modules; one end of a first conversion module is connected to the control module, and the other end of the first conversion module is connected to the gate of a transistor in the second load module;

[0019] The first conversion module is used to adjust the voltage domain of the control signal output by the control module to the transistor in the second load module.

[0020] Optionally, the at least two load modules include: the first load module and N second load modules; wherein, one end of the i-th second load module is connected to the (i - 1)-th second load module or the first load module, and the other end of the i-th second load module is connected to the (i + 1)-th second load module; wherein, N is a positive integer greater than or equal to 2, and i is a positive integer greater than or equal to 1 and less than N;

[0021] The voltage domain of the control signal output by the first conversion module in the i-th second load module to the transistor in the i-th second load module is lower than the voltage domain of the control signal output by the first conversion module in the (i + 1)-th second load module to the transistor in the (i + 1)-th second load module.

[0022] Optionally, the control module includes:

[0023] The control unit;

[0024] A plurality of second conversion modules, one end of a second conversion module is connected to the control unit, and the other end of the second conversion module is connected to a load module;

[0025] Each second conversion module includes: at least two extended input / output I / O ports, and at least two of the extended I / O ports are respectively connected to the gates of at least two transistors in the corresponding load module.

[0026] Optionally, the control unit includes one of the following: a field programmable gate array (FPGA); a micro control unit (MCU), a central processing unit (CPU).

[0027] Optionally, the electronic load further includes:

[0028] A power distribution module, one end of the power distribution module is connected to the output end of the power supply under test, and the other end of the power distribution module is connected to at least two load modules.

[0029] According to a second aspect of the embodiments of the present disclosure, a test system is provided, including:

[0030] A power supply under test;

[0031] An electronic load as in the first aspect of the embodiments of the present disclosure, and the electronic load is connected to the power supply under test.

[0032] The technical solutions provided by the embodiments of the present disclosure may include the following beneficial effects:

[0033] In the embodiments of the present disclosure, the electronic load may include at least two load modules and a control module. Each of the at least two load modules may include at least two load branches arranged in parallel. Each load branch includes a transistor and a load resistor. By connecting the gates of each transistor in at least two load modules to the control module, the control module is used to control the on / off states of each transistor in at least two load modules, so as to dynamically adjust the resistance value of the equivalent resistance of the entire electronic load, simulate a large current fluctuation, and improve the transient current capacity of the electronic load to meet the test requirements of special scenarios.

[0034] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The accompanying drawings here are incorporated into the specification and form a part of the specification, showing embodiments consistent with the present disclosure, and are used together with the specification to explain the principles of the present disclosure.

[0036] Figure 1 is a schematic circuit structure diagram of an electronic load shown according to an exemplary embodiment Figure 1 ;

[0037] Figure 2 is a schematic circuit structure diagram of an electronic load shown according to an exemplary embodiment Figure 2 ;

[0038] Figure 3 is a schematic circuit structure diagram of an electronic load shown according to an exemplary embodiment Figure 3 ;

[0039] Figure 4 is a schematic circuit structure diagram of a load network part of an electronic load shown according to an exemplary embodiment;

[0040] Figure 5 is a schematic circuit structure diagram of a control circuit part of an electronic load shown according to an exemplary embodiment. Detailed implementation manners

[0041] Here, the exemplary embodiments will be described in detail, and the examples are shown in the accompanying drawings. When the following description refers to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all implementation manners consistent with the present disclosure. On the contrary, they are merely examples of devices consistent with some aspects of the present disclosure as detailed in the appended claims.

[0042] In some embodiments, the maximum transient current change rate of the current electronic load is 20 A / us. However, in some special test scenarios, such as in the power supply design process of high-computing-power chips, it is often necessary to simulate a current fluctuation of 3000 A / us or even larger. The current electronic load can no longer meet the test requirements of some special scenarios.

[0043] Based on this, the embodiments of the present disclosure provide an electronic load, as Figure 1 shown Figure 1 is a schematic circuit structure diagram of an electronic load shown according to an exemplary embodiment Figure 1 . The electronic load 100 includes:

[0044] At least two load modules 101, the at least two load modules 101 are connected in series, and the at least two load modules 101 are connected to the power supply under test; wherein, each load module 101 includes: at least two load branches connected in parallel, each load branch includes a transistor and a load resistor, and the load resistor is connected to the source electrode of the transistor;

[0045] A control module 102, connected to the gates of at least two transistors in each load module 101, for controlling the on / off states of the transistors.

[0046] In the embodiments of the present disclosure, the electronic load may include at least two load modules and a control module. Among them, at least two load modules are connected in series between the power supply under test and the ground terminal.

[0047] The control module is connected to at least two load modules, and the control module can be used to adjust the resistance value of the equivalent resistance of at least two load modules.

[0048] It should be noted that the electronic load uses at least two load modules arranged in series to achieve series voltage division, so that the electronic load can test the high-voltage power supply under test.

[0049] Each load module may include: at least two load branches arranged in parallel, and each load branch includes a transistor and a load resistor.

[0050] In some embodiments, the number of load branches included in different load modules may be the same or different.

[0051] In some embodiments, the transistor may be a field effect transistor, and further may be a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

[0052] In some embodiments, the transistor may be an N-type transistor.

[0053] The source electrode of the transistor in each load branch is connected to the load resistor, the drain electrode of the transistor is connected to another load module, and the gate electrode of the transistor is connected to the control module. In this way, the control module can control the on / off state of the transistor.

[0054] It should be noted that in the embodiments of the present disclosure, the transistor functions as a switch. When the transistor is in the on state, the load branch where the transistor is located is a conducting path. When the transistor is in the off state, the load branch where the transistor is located is an open circuit.

[0055] Since at least two load branches in each load module are arranged in parallel, the resistance value of the equivalent resistance of the load module is determined by the resistance value of the equivalent resistance corresponding to at least one conducting load branch in the load module. It can be understood that when there is one load branch in at least two load branches of the load module that is in a conducting state, the resistance value of the equivalent resistance corresponding to the load module is determined by the resistance value of the load resistor on the conducting load branch. When there are multiple load branches in at least two load branches of the load module that are in a conducting state, the resistance value of the equivalent resistance corresponding to the load module is jointly determined by the resistance values of the load resistors on the multiple conducting load branches.

[0056] Therefore, in the embodiments of the present disclosure, the control module is connected to the gate electrodes of multiple transistors in at least two load modules, and can be used to control the on / off state of each transistor in at least two load modules, so as to control the resistance value of the equivalent resistance of the entire electronic load.

[0057] In the embodiments of the present disclosure, an electronic load may include at least two load modules and a control module. Each of the at least two load modules may include at least two load branches connected in parallel. Each load branch includes a transistor and a load resistor. The control module in the electronic load is connected to the gates of each of the transistors in the at least two load modules, so as to use the control module to control the on-off states of each of the transistors in the at least two load modules, thereby dynamically adjusting the resistance value of the equivalent resistance of the entire electronic load, simulating a large current fluctuation, so as to improve the transient current capability of the electronic load and meet the test requirements of special scenarios.

[0058] In some embodiments, the control module is configured to output control signals to the gates of the transistors in the at least two load modules; wherein, the control signals output by the control module to the transistors in the at least two load modules are independent control signals;

[0059] The control signals output by the control module to at least two transistors in the same load module are used to turn on at least one transistor in the load module.

[0060] In the embodiments of the present disclosure, the control module may output control signals to the gates of each of the transistors in the at least two load modules, and the control signals may control the on-off states of the corresponding transistors.

[0061] It should be noted that the control signals output by the control module to each of the transistors in the at least two load modules are independent control signals. That is, the control module can independently control each of the transistors in the at least two load modules. In this way, the dynamic adjustment range of the equivalent resistance of the electronic load can be effectively expanded, so as to simulate a larger current fluctuation by using the electronic load and improve the transient current capability of the electronic load.

[0062] In the embodiments of the present disclosure, the at least two load modules of the electronic load are connected in series. In order to ensure that the electronic load can perform normal tests on the power supply under test, the at least two load modules of the electronic load should form a path between the power supply under test and the ground terminal. That is, during the process of the electronic load testing the power supply under test, at least one load branch in each of the at least two load modules is in a conducting state.

[0063] Therefore, during the process of the electronic load testing the power supply under test, the control signals output by the control module to the transistors of at least two load branches in the same load module can be used to turn on at least one transistor in the load module.

[0064] It should be noted that since at least two load branches in a load module are connected in parallel, the control module can form a path between the power supply under test and the ground terminal by controlling the conduction of the transistor in any one of the load branches in each load module.

[0065] In some embodiments, the control module can control parameters such as the conduction timing and on-off duration of each transistor in at least two load modules to dynamically adjust the equivalent resistance of the electronic load at high speed, so as to achieve high-speed adjustment of the current of the electronic load and improve the transient current capacity of the electronic load.

[0066] In the embodiments of the present disclosure, the control module independently controls each transistor in at least two load modules. In this way, the dynamic adjustment range of the equivalent resistance of the electronic load can be effectively expanded, so as to simulate a larger current fluctuation with the electronic load and improve the transient current capacity of the electronic load.

[0067] In some embodiments, the voltage of the power supply under test is less than or equal to the first voltage threshold, and the transistor is a gallium nitride (GaN) transistor; or, the voltage of the power supply under test is greater than or equal to the second voltage threshold, and the transistor is a silicon carbide (SiC) transistor; wherein, the first voltage threshold is less than the second voltage threshold.

[0068] In the embodiments of the present disclosure, the transistors in the electronic load can be GaN transistors or SiC transistors.

[0069] It should be noted that a GaN transistor is a high electron mobility semiconductor device. GaN transistors have the advantages of low on-resistance, low conduction loss, low switching loss, high-frequency switching, and high efficiency.

[0070] An SiC transistor is a metal oxide semiconductor field effect transistor. Compared with traditional silicon transistors, such as silicon IGBTs, SiC transistors have a faster switching rate, which can effectively reduce the switching loss and improve the dynamic performance.

[0071] Since the switching rates of GaN transistors and SiC transistors are very high, using GaN transistors or SiC transistors as the transistors in the electronic load can enable the resistance value of the equivalent resistance of the electronic load to change rapidly under the control of the control module, so that the transient current change rate of the electronic load can be greater than or equal to 3000 A / us, meeting the test requirements in some special scenarios.

[0072] It should be noted that, since the turn-on voltage of GaN transistors is very low, when the transistors in the electronic load are GaN transistors, the voltage difference of each load module can be as low as about 0.3V. Moreover, in the case of low voltage, the on-resistance of GaN transistors is very small. Compared with MOSFETs, the power density of GaN transistors is increased by more than 10 times, making them more suitable for the ultra-low voltage situation with high-density power consumption.

[0073] Based on this, when the voltage of the power supply under test is less than or equal to the first voltage threshold, the transistors in the electronic load can be GaN transistors.

[0074] Since SiC transistors have characteristics such as high temperature resistance, high voltage resistance, and high current resistance, SiC transistors are more suitable for high-voltage situations. Therefore, when the voltage of the power supply under test is greater than or equal to the second voltage threshold, the transistors in the electronic load can be SiC transistors.

[0075] Here, the first voltage threshold is less than the second voltage threshold. It can be understood that for a power supply under test with low voltage and large current, the transistors in the electronic load can be GaN transistors. For a power supply under test with high voltage, the transistors in the electronic load can be SiC transistors.

[0076] By using GaN transistors or SiC transistors in the electronic load in the embodiments of the present disclosure, the characteristics such as the high switching rate of GaN transistors or SiC transistors are utilized, so that the resistance value of the equivalent resistance of the electronic load can change rapidly, thereby greatly improving the transient current change rate of the electronic load and meeting the test requirements in some special scenarios.

[0077] In some embodiments, as Figure 2 shown, Figure 2 FIG. is a schematic circuit structure diagram of an electronic load shown according to an exemplary embodiment. Figure 2 The electronic load 100 further includes:

[0078] A first sampling module 103, the input end of the first sampling module 103 is connected to the load module 101, and the output end of the first sampling module 103 is connected to the control module 102, which is configured to collect the current signal of the load module 101 and output the current signal to the control module 102;

[0079] A second sampling module 104, the input end of the second sampling module 104 is connected to at least two load modules 101, and the output end of the second sampling module 104 is connected to the control module 102, which is configured to collect the voltage signals of at least two load modules 101 and input the voltage signals to the control module 102;

[0080] The control module 102 is configured to adjust the on / off state of the transistor in real time according to the current signal and / or voltage signal.

[0081] In an embodiment of the present disclosure, the electronic load may further include: a first sampling module and a second sampling module.

[0082] The first sampling module may be a current sampling module. The input end of the first sampling module is connected to the load module, and the output end of the first sampling module is connected to the control module. The first sampling module is configured to collect the current signal of the load module and output the current signal to the control module.

[0083] Here, since at least two load modules are connected in series, the magnitude of the current flowing through each load module is the same. Therefore, the input end of the first acquisition module may be connected to any one of the at least two load modules to collect the current signal.

[0084] The second sampling module may be a voltage sampling module. The input end of the second sampling module is connected to at least two load modules, and the output end of the second sampling module is connected to the control module. The second sampling module is configured to collect the voltage signal of each load module among at least two load modules and output the voltage signal to the control module.

[0085] The control module may adjust the on / off state of each transistor in at least two load modules in real time according to the current signal input by the first sampling module and / or the multiple voltage signals input by the second sampling module, so as to adjust the equivalent resistance of the electronic load in real time and improve the transient current capacity of the electronic load.

[0086] In the embodiment of the present disclosure, by providing the first sampling module and the second sampling module in the electronic load, the first sampling module and the second sampling module are used to sample the current and voltage of at least two load modules, and the sampled current signal and / or voltage signal are input into the control module, so that the control module can adjust the on / off state of the transistors in at least two load modules based on the current signal and / or voltage signal of at least two load modules, realizing the closed-loop control of at least two load modules.

[0087] In some embodiments, as Figure 3 shown, Figure 3 is a schematic circuit structure diagram of an electronic load shown according to an exemplary embodiment Figure 3 . At least two load modules include:

[0088] a first load module 1011 and at least one second load module 1012; wherein, the first load module 1011 is connected to the ground terminal; at least one second load module 1012 is connected in series between the power supply to be measured and the first load module 1011;

[0089] Each second load module 1012 includes: at least two first conversion modules 105; one end of a first conversion module 105 is connected to the control module 102, and the other end of the first conversion module 105 is connected to the gate of a transistor in the second load module 1012;

[0090] The first conversion module 105 is used to adjust the voltage domain of the control signal output by the control module 102 to the transistor in the second load module 1012.

[0091] In the embodiments of the present disclosure, at least two load modules may include: a first load module and at least one second load module.

[0092] One end of the first load module is connected to the ground terminal, and the other end of the first load module is connected to the second load module.

[0093] At least one second load module is connected in series between the power supply under test and the first load module. It can be understood that the first load module may be the load module arranged closer to the ground terminal among at least two load modules, and the second load module may be the load module other than the first load module among at least two load modules.

[0094] Each second load module may further include: at least two first conversion modules, one end (i.e., the input end) of the first conversion module is connected to the control module, and the other end (i.e., the output end) of the first conversion module is connected to the gate of a transistor in a load branch in the second load module.

[0095] It can be understood that the number of first conversion modules in each second load module is determined by the number of load branches in the second load module.

[0096] The first conversion module can be used to adjust the voltage domain of the control signal output by the control module to the transistor in the second load module. In one embodiment, the first conversion module may be a level shifter (LS) module.

[0097] It should be noted that the transistor in the electronic load is an N-type transistor. When the voltage difference between the gate voltage and the source voltage of the N-type transistor is higher than the threshold voltage, the drain and the source of the N-type transistor are turned on; when the voltage difference between the gate voltage and the source voltage of the N-type transistor is less than the threshold voltage, the drain and the source of the N-type transistor are turned off.

[0098] Inside an electronic load, the load resistors of each load branch in the first load module are connected to the ground terminal, while the load resistors of each load branch in the second load module are not directly connected to the ground terminal. As a result, the source voltage of the transistors in each load branch of the second load module will be higher than that of the transistors in each load branch of the first load module. Correspondingly, the gate voltage required for the transistors in the second load module to conduct will also be higher than that required for the transistors in the first load module to conduct. However, the gates of the transistors in the first load module and the gates of the transistors in the second load module are connected to the same control module, and the voltage domain of the control signal output by the control module is the same.

[0099] On this basis, when the control module inputs a control signal to the transistors in the second load module and the transistors in the first load module to control the conduction of the transistors in the second load module and the transistors in the first load module, it is possible that the voltage difference between the gate voltage and the source voltage of the transistors in the first load module is greater than the threshold voltage, while the voltage difference between the gate voltage and the source voltage of the transistors in the second load module is less than the threshold voltage, resulting in the transistors in the second load module being unable to conduct.

[0100] To reduce the occurrence of the above situation, in an embodiment of the present disclosure, a first conversion module is provided in the second load module, and the first conversion module is connected between the control module and the gates of the transistors in the second load module. The first conversion module is used to adjust the voltage domain of the control signal output by the control module to the transistors in the second load module, so that the control module can accurately control the on / off states of the transistors in the first load module and at least one second load module under the condition of the control signal with the same voltage domain output by the control module.

[0101] In an embodiment of the present disclosure, by providing a first conversion module in at least two second load modules of the electronic load, the first conversion module is used to adjust the voltage domain of the control signal output by the control module to the transistors in at least two second load modules, so as to output a control signal with a suitable voltage domain to the transistors in at least two second load modules, so that the transistors in the first load module and at least two second load modules in the electronic load can all operate in an optimal state.

[0102] In some embodiments, at least two load modules include: a first load module and N second load modules; wherein, one end of the i-th second load module is connected to the (i - 1)-th second load module or the first load module, and the other end of the i-th second load module is connected to the (i + 1)-th second load module; wherein, N is a positive integer greater than or equal to 2, and i is a positive integer greater than or equal to 1 and less than N;

[0103] The voltage domain of the control signal output by the first conversion module in the i-th second load module to the transistor in the i-th second load module is lower than the voltage domain of the control signal output by the first conversion module in the (i + 1)-th second load module to the transistor in the (i + 1)-th second load module.

[0104] In the embodiments of the present disclosure, at least two load modules include a first load module and N second load modules. Among them, the N second load modules are connected in series between the first load module and the power supply under test.

[0105] One end of the i-th second load module among the N second load modules is connected to the (i - 1)-th second load module or the first load module, and the other end of the i-th second load module is connected to the (i + 1)-th second load module. Here, N can be a positive integer greater than or equal to 2, and i is a positive integer greater than or equal to 1 and less than N.

[0106] In one embodiment, when i = 1, one end of the first second load module is connected to the first load module, and the other end of the first second load module is connected to the second second load module. When i is greater than 1, one end of the i-th second load module is connected to the (i - 1)-th second load module, and the other end of the i-th second load module is connected to the (i + 1)-th second load module.

[0107] In this case, the source voltage of the transistor in each load branch in the i-th second load module will be higher than the source voltage of the transistor in each load branch in the (i - 1)-th second load module or the first load module, and the source voltage of the transistor in each load branch in the i-th second load module will be lower than the source voltage of each load branch in the (i + 1)-th second load module.

[0108] In order to enable the control module in the electronic load to accurately control the on-off state of the transistors in the N second load modules, the first conversion module connected to each transistor in the N second load modules can be used to perform voltage domain conversion on the control signal output by the control module to the transistor.

[0109] In the embodiments of the present disclosure, the first conversion module in the i-th second load module can be used to convert the voltage domain of the control signal output by the control module to each transistor in the i-th second load module, and the voltage domain of the control signal output by the first conversion module in the i-th second load module to the transistor in the i-th second load module is higher than the voltage domain of the control signal received by the transistor in the first load module.

[0110] Among the N second load modules, the voltage domain of the control signal output by the first conversion module in the i-th second load module to the transistor in the i-th second load module is lower than the voltage domain of the control signal output by the first conversion module in the (i + 1)-th second load module to the transistor in the (i + 1)-th second load module.

[0111] The voltage domain of the control signal output by the first conversion module in the i-th second load module to the transistor in the i-th second load module is higher than the voltage domain of the control signal output by the first conversion module in the (i - 1)-th second load module to the transistor in the (i - 1)-th second load module.

[0112] In one embodiment, when i is greater than 1, the voltage domain of the control signal output by the first conversion module in the i-th second load module to the transistor in the i-th second load module is higher than the voltage domain of the control signal output by the first conversion module in the (i - 1)-th second load module to the transistor in the (i - 1)-th second load module.

[0113] The embodiments of the present disclosure utilize the first conversion module to adjust the voltage domain of the control signal output by the control module to the transistors in the N second load modules, so that the voltage domain of the control signal received by the transistors in the i-th second load module among the N second load modules is lower than the voltage domain of the control signal received by the transistors in the (i + 1)-th second load module, thereby enabling the transistors in the N second load modules within the electronic load to all operate in an optimal state.

[0114] In some embodiments, the control module includes:

[0115] A control unit;

[0116] A plurality of second conversion modules, one end of a second conversion module is connected to the control unit, and the other end of the second conversion module is connected to a load module;

[0117] Each second conversion module includes: at least two extended input / output I / O ports, and at least two extended I / O ports are respectively connected to the gates of at least two transistors in the corresponding load module.

[0118] In the embodiments of the present disclosure, the control module may include a control unit and a plurality of second conversion modules. Among them, the number of second conversion modules in the control module is determined by the number of load modules.

[0119] In one embodiment, the number of second conversion modules in the control module is the same as the number of load modules.

[0120] One end of the second conversion module is connected to the control unit, and the other end of the second conversion module is connected to a load module. Here, the second conversion module can be connected to the gates of the transistors of at least two load branches in the load module.

[0121] In the embodiment of the present disclosure, the second conversion module can be used to expand the IO ports of the control unit. It should be noted that in the electronic load, the control unit needs to individually control each transistor in each load module. However, the number of IO ports of the control unit is limited. In this case, the electronic load can be provided with multiple second conversion modules between the control unit and at least two load modules to expand more IO ports.

[0122] The second conversion module can include at least two extended IO ports, and each of the at least two extended IO ports is connected to the gate of a transistor in the corresponding load module.

[0123] In some embodiments, when the other end of the second conversion module is connected to the first load module, at least two extended ports of the second conversion module can be respectively connected to the gates of the transistors of at least two load branches in the first load module.

[0124] In some embodiments, when the other end of the second conversion module is connected to the second load module, at least two extended IO ports of the second conversion module can be connected to the inputs of at least two first conversion modules in the second load module. In this case, at least two extended IOs of the second conversion module are respectively connected to the gates of the transistors through at least two first conversion modules in the corresponding second load module.

[0125] In the embodiment of the present disclosure, the control module can include a control unit and multiple second conversion modules. One end of each conversion module in the multiple second conversion modules is connected to the control unit, and the other end is connected to a load module. The second conversion module can include at least two extended IO ports, so as to use at least two extended IO ports of the multiple second conversion modules to realize the connection between the control unit and the transistors of at least two load branches in each load module, thus avoiding the situation of insufficient number of IO ports of the control unit, and at the same time, it can also ensure that the topologies of at least two load modules are the same, and ensure that the control of each transistor in at least two load modules by the control unit is synchronized in timing.

[0126] In some embodiments, the control unit includes one of the following: Field Programmable Gate Array (FPGA); Microcontroller Unit (MCU), Central Processing Unit (CPU).

[0127] In the embodiments of the present disclosure, the control unit may be an FPGA, an MCU or a CPU, and the control unit may be used to control the gate voltage of the transistor.

[0128] In some embodiments, the control unit may dynamically adjust the current of the electronic load at high speed by controlling parameters such as the conduction timing and on-off duration of each transistor in at least two load modules.

[0129] In some embodiments, the electronic load further includes: a power distribution module, one end of the power distribution module is connected to the output end of the power supply under test, and the other end of the power distribution module is connected to at least two load modules.

[0130] In the embodiments of the present disclosure, the electronic load may further include a power distribution module, and the power distribution module is connected between the output end of the power supply under test and at least two load modules.

[0131] The power distribution module may be used to transfer electric power between the power supply under test and at least two load modules.

[0132] In the embodiments of the present disclosure, by providing a power distribution module in the electronic load, the power distribution module can provide a stable and clean power signal for at least two load modules, while minimizing the voltage drop, noise and transient response time.

[0133] The embodiments of the present disclosure further provide a test system, which includes:

[0134] A power supply under test;

[0135] The electronic load as shown in one or more of the above solutions, and the electronic load is connected to the power supply under test.

[0136] In the embodiments of the present disclosure, the test system may include: a power supply under test and an electronic load, and the electronic load may be connected to the power supply under test.

[0137] The electronic load may include at least two load modules and a control module, wherein at least two load modules are connected in series between the power supply under test and the ground terminal.

[0138] Each load module includes: at least two load branches connected in parallel, each load branch includes a transistor and a load resistor, and the load resistor is connected to the source electrode of the transistor;

[0139] The control module is connected to the gates of at least two transistors in each load module, and the control module can control the on-off state of each transistor in at least two load modules, so as to control the resistance value of the equivalent resistance of the entire electronic load.

[0140] In the embodiments of the present disclosure, the control module in the electronic load is connected to the gates of each transistor in at least two load modules. During the process of testing the power supply under test using the electronic load, the control module controls the on / off states of each transistor in at least two load modules, thereby dynamically adjusting the resistance value of the equivalent resistance of the entire electronic load, simulating a large current fluctuation, so as to improve the transient current capacity of the electronic load and meet the test requirements of special scenarios.

[0141] To better understand the embodiments of the present disclosure, the present disclosure will be further described below through some exemplary embodiments.

[0142] In one example, the circuit structure of the electronic load may include a load network part and a control circuit part. Among them, as Figure 4 shown, Figure 4 FIG. is a schematic circuit diagram of a load network part of an electronic load shown according to an exemplary embodiment. The load network of the electronic load may include n series-connected power domains, that is, power domains V0 to Vn, where n is greater than or equal to 1. Each power domain includes a plurality of GaN transistors or SiC transistors, and a load resistor.

[0143] If the voltage of the power supply to be tested by the electronic load is very low and the current is very large, the electronic load can select GaN transistors. If the voltage of the power supply to be tested by the electronic load is very high, the electronic load can select SiC transistors.

[0144] Multiple transistors in the electronic load, that is, transistors CTRL00 to CTRLnn, are respectively connected to the control circuit of the electronic load.

[0145] The transistors in power domains V1 to Vn, that is, the gates of transistors CTRL10 to CTRLnn, need to be connected to the LS conversion module. The LS conversion module is used to perform level conversion on the drive signal of the transistor and output a suitable drive level to ensure that the transistors in the load network work in the best state, so that the transistors in power domains V0 to V0 can be under the same level control, realizing more flexible control.

[0146] The current and voltage of each power domain can be sampled to form a voltage feedback signal and a current feedback signal, and the voltage feedback signal and current feedback signal of each power domain are connected to the control circuit.

[0147] As Figure 5 shown, Figure 5 FIG. is a schematic circuit diagram of a control circuit part of an electronic load shown according to an exemplary embodiment. To more clearly show the connection relationship between the control circuit and the load network, Figure 5 the circuit structure shown in also includes the LS conversion module of the load network part.

[0148] The control circuit may include: a main controller and multiple high-speed IO conversion chips. The main controller is used to output control signals and adjust the control signals in real time according to the voltage feedback signal and current feedback signal of each power domain, so as to achieve closed-loop control of the load network.

[0149] The high-speed IO conversion chip is used to convert the control signal output by the main controller into a signal that the LS conversion module can recognize. It should be noted that adding a high-speed IO conversion chip in the electronic load is mainly to expand more IO ports to avoid the situation that the IO ports of the main controller are insufficient. In addition, it is also to ensure that the topologies of all power domains are the same and to ensure synchronization in timing.

[0150] Those skilled in the art will readily conceive of other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. The present disclosure is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include known common knowledge or conventional technical means in the technical field not disclosed in the present disclosure. The specification and embodiments are only regarded as exemplary, and the true scope and spirit of the present disclosure are pointed out by the following claims.

[0151] It should be understood that the present disclosure is not limited to the exact structures described above and shown in the drawings, and various modifications and changes can be made without departing from its scope. The scope of the present disclosure is only limited by the appended claims.

Claims

1. An electronic load, characterized in that: The electronic load comprises: At least two load modules, the at least two load modules are arranged in series, and the at least two load modules are connected to a power supply to be tested; Wherein, each load module comprises: at least two load branches arranged in parallel, each load branch comprises a transistor and a load resistor, and the load resistor is connected to the source of the transistor; The control module is connected to the gates of at least two transistors in each load module and is used to control the on and off states of the transistors.

2. The electronic load according to claim 1, characterized in that: The control module is used to output control signals to the gates of the transistors in the at least two load modules; wherein the control signals output by the control module to the transistors in the at least two load modules are independent control signals; The control signal output by the control module to at least two transistors in the same load module is used to turn on at least one transistor in the load module.

3. The electronic load according to claim 1 or 2, characterized in that: The voltage of the power supply to be tested is less than or equal to a first voltage threshold, and the transistor is a gallium nitride (GaN) transistor; or The voltage of the power supply to be tested is greater than or equal to a second voltage threshold, and the transistor is a silicon carbide SiC transistor; wherein the first voltage threshold is less than the second voltage threshold.

4. The electronic load according to claim 1 or 2, characterized in that: The electronic load further includes: A first sampling module, wherein an input end of the first sampling module is connected to the load module, and an output end of the first sampling module is connected to the control module, for collecting a current signal of the load module and outputting the current signal to the control module; A second sampling module, wherein an input end of the second sampling module is connected to the at least two load modules, and an output end of the second sampling module is connected to the control module, for collecting voltage signals of the at least two load modules and inputting the voltage signals to the control module; The control module is used to adjust the on-off state of the transistor in real time according to the current signal and / or the voltage signal.

5. The electronic load according to claim 1 or 2, characterized in that: The at least two load modules include: A first load module and at least one second load module; wherein the first load module is connected to a ground terminal; and the at least one second load module is connected in series between the power supply to be tested and the first load module; Each of the second load modules includes: at least two first conversion modules; one end of one of the first conversion modules is connected to the control module, and the other end of the first conversion module is connected to the gate of a transistor in the second load module; The first conversion module is used to adjust the voltage domain of the control signal output by the control module to the transistor in the second load module.

6. The electronic load according to claim 5, characterized in that: The at least two load modules include: the first load module and N second load modules; wherein one end of the i-th second load module is connected to the i-1-th second load module or the first load module, and the other end of the i-th second load module is connected to the i+1-th second load module; wherein N is a positive integer greater than or equal to 2, and i is a positive integer greater than or equal to 1 and less than N; The voltage domain of the control signal output by the first conversion module in the i-th second load module to the transistor in the i-th second load module is lower than the voltage domain of the control signal output by the first conversion module in the i+1-th second load module to the transistor in the i+1-th second load module.

7. The electronic load according to claim 1, characterized in that: The control module comprises: Control unit; A plurality of second conversion modules, one end of a second conversion module is connected to the control unit, and the other end of the second conversion module is connected to a load module; Each of the second conversion modules includes: at least two extended input and output IO ports, and the at least two extended IO ports are respectively connected to the gates of at least two transistors in the corresponding load module.

8. The electronic load according to claim 7, characterized in that: The control unit includes one of the following: a field programmable gate array FPGA; a micro control unit MCU, and a central processing unit CPU.

9. The electronic load according to claim 1, characterized in that: The electronic load further includes: A power distribution module, one end of which is connected to the output end of the power supply to be tested, and the other end of which is connected to the at least two load modules.

10. A testing system, characterized in that: include: The power supply to be tested; The electronic load according to any one of claims 1 to 9, wherein the electronic load is connected to the power supply to be tested.

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