Wafer marking method and device and wafer marking machine

Abstract

The invention discloses a wafer marking method and device and a wafer marking machine, and belongs to the technical field of semiconductors. The method comprises the steps that a detection light beam is emitted to a to-be-marked wafer, a reflection light beam reflected by the to-be-marked wafer is received, the to-be-marked wafer comprises a reserved marking area and a device area, and the area of an irradiation area of the detection light beam is smaller than that of the reserved marking area; on the basis of the parameter information of the reflected light beam, under the condition that the irradiation area of the detection light beam is located in the reserved marking area, a marking content area is determined from the irradiation area of the detection light beam, and marking operation is conducted on the marking content area. The area of the marking content area is smaller than the area of the irradiation area of the detection light beam. According to the method, the detection light beam is emitted to irradiate the to-be-marked wafer before the marking operation, the marking operation area is accurately judged according to the parameter information of the reflected light beam, and the wafer is prevented from being damaged.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, and particularly relates to a wafer marking method, device, and wafer marker. Background Art

[0002] Wafer marking is to irradiate a certain part of the wafer with a laser beam of high energy density, causing the surface material to vaporize or undergo a chemical reaction with a color change, thereby leaving a permanent mark. Various characters, symbols, patterns, etc. can be marked. The character size can range from millimeters to micrometers. Marking is of great significance for product anti-counterfeiting. In the front-end process, marking the front side of the wafer can also prevent the confusion of wafer information and achieve abnormal traceability.

[0003] Currently, wafer marking is mainly achieved by grasping the wafer to a calibrator. The calibrator rotates at a preset angle, and then the laser marks the characters in the specified area. For wafer manufacturing plants with a process R & D direction, any change in various conditions during R & D or reduction of process steps may change the reserved marking position. There may be errors in the preset rotation angle of the calibrator, which is likely to cause the risk of laser marking operation on effective devices, potentially resulting in waste of wafer devices and problems in subsequent code reading and identification. Summary of the Invention

[0004] This application aims to solve at least one of the technical problems existing in the prior art. For this purpose, this application provides a wafer marking method, device, and wafer marker, which can accurately determine the marking operation area, ensure that wafer marking is at the reserved marking position, and effectively avoid waste of wafer devices and problems in subsequent code reading and identification.

[0005] In a first aspect, this application provides a wafer marking method, which includes:

[0006] Emitting a detection beam to a wafer to be marked and receiving the reflected beam reflected by the wafer to be marked. The wafer to be marked includes a reserved marking area and a device area, and the area of the irradiation area of the detection beam is smaller than the area of the reserved marking area;

[0007] When it is determined based on the parameter information of the reflected beam that the irradiation area of the detection beam is located within the reserved marking area, determining a marking content area from within the irradiation area of the detection beam and performing a marking operation on the marking content area. The area of the marking content area is smaller than the area of the irradiation area of the detection beam.

[0008] According to the wafer marking method of the present application, before the marking operation, a detection beam is emitted to irradiate the wafer to be marked. Based on the parameter information of the reflected beam reflected from the irradiation area of the detection beam, it is determined whether there is a device area in the current irradiation area of the detection beam, so as to accurately determine the marking operation area, ensure that the wafer marking is at the reserved marking position, and effectively avoid waste of wafer devices and problems in subsequent code reading and recognition.

[0009] According to an embodiment of the present application, after receiving the reflected beam reflected by the wafer to be marked and before determining the marking content area within the irradiation area of the detection beam, the method further includes:

[0010] When it is determined based on the parameter information of the reflected beam that the irradiation area of the detection beam includes the reserved marking area and the device area, based on the parameter information of the reflected beam, control the wafer to be marked to move in the direction of the device area within the irradiation area of the detection beam;

[0011] Emit the detection beam to the wafer to be marked again, and receive the reflected beam reflected by the wafer to be marked.

[0012] According to an embodiment of the present application, after emitting the detection beam to the wafer to be marked again and receiving the reflected beam reflected by the wafer to be marked, the method further includes:

[0013] When it is determined that the number of times the wafer to be marked moves exceeds the target number threshold and, based on the parameter information of the reflected beam, it is determined that the irradiation area of the detection beam includes the reserved marking area and the device area, output an abnormal warning message.

[0014] According to an embodiment of the present application, the emission parameters of the detection beam are that the detection beam is a polarized light, the light intensity of the detection beam is greater than 40000 counts, the incident angle is 65° - 70°, and the observation wavelength point is 630 nm - 640 nm.

[0015] According to an embodiment of the present application, determining that the irradiation area of the detection beam is located within the reserved marking area based on the parameter information of the reflected beam includes:

[0016] Based on the parameter information of the reflected beam, determine the refractive index of the irradiation area of the detection beam;

[0017] When the refractive index is within the target refractive index range, determine that the irradiation area of the detection beam is located within the reserved marking area.

[0018] According to an embodiment of the present application, the material of the reserved marking area is a thin film material.

[0019] According to an embodiment of the present application, the distance between the boundary of the marking content area and the boundary of the irradiation area of the detection beam is 0.15 mm - 1 mm.

[0020] According to an embodiment of the present application, the ratio of the area of the irradiation area of the detection beam to the area of the reserved marking area is 0.4 - 0.5.

[0021] In a second aspect, the present application provides a wafer marking device, which includes:

[0022] A first processing module, configured to emit a detection beam to a wafer to be marked and receive a reflected beam reflected by the wafer to be marked. The wafer to be marked includes a reserved marking area and a device area, and the area of the irradiation area of the detection beam is smaller than the area of the reserved marking area;

[0023] A second processing module, configured to determine a marking content area from within the irradiation area of the detection beam and perform a marking operation on the marking content area when it is determined based on the parameter information of the reflected beam that the irradiation area of the detection beam is located within the reserved marking area. The area of the marking content area is smaller than the area of the irradiation area of the detection beam.

[0024] In a third aspect, the present application provides a wafer marking machine, including:

[0025] A beam emission and reception component and a marking component;

[0026] A wafer moving device, on which a wafer to be marked is placed. The wafer moving device is configured to move the wafer to be marked to the beam emission and reception component. The beam emission and reception component is configured to emit a detection beam to the wafer to be marked and receive a reflected beam reflected by the wafer to be marked. The wafer to be marked includes a reserved marking area and a device area, and the area of the irradiation area of the detection beam is smaller than the area of the reserved marking area;

[0027] A control device, electrically connected to the beam emission and reception component, the marking component, and the wafer moving device. The control device is configured to determine a marking content area from within the irradiation area of the detection beam when it is determined based on the parameter information of the reflected beam that the irradiation area of the detection beam is located within the reserved marking area, and control the marking component to perform a marking operation on the marking content area. The area of the marking content area is smaller than the area of the irradiation area of the detection beam.

[0028] According to the wafer marking machine of the present application, before the marking operation, a detection beam is emitted to irradiate the wafer to be marked. According to the parameter information of the reflected beam reflected from the irradiated area of the detection beam, it is judged whether there is a device area in the current irradiated area of the detection beam, so as to accurately determine the marking operation area, ensure that the wafer marking is at the reserved marking position, and effectively avoid the waste of wafer devices and problems in subsequent code reading and recognition.

[0029] According to an embodiment of the present application, the detection beam is a polarized light, the light intensity of the detection beam is greater than 40000 counts, the incident angle is 65° - 70°, and the observation wavelength point is 630nm - 640nm.

[0030] According to an embodiment of the present application, the distance between the boundary of the marking content area and the boundary of the irradiated area of the detection beam is 0.15mm - 1mm.

[0031] According to an embodiment of the present application, the ratio of the area of the irradiated area of the detection beam to the area of the reserved marking area is 0.4 - 0.5.

[0032] According to an embodiment of the present application, it further includes:

[0033] A code reader, the code reader is electrically connected to the control device, the wafer moving device is used to move the marked wafer to the position of the code reader, and the code reader is used to read the marking content of the marked wafer.

[0034] In a fourth aspect, the present application provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the computer program, it implements the wafer marking method as described in the first aspect above.

[0035] In a fifth aspect, the present application provides a non-transitory computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, it implements the wafer marking method as described in the first aspect above.

[0036] In a sixth aspect, the present application provides a computer program product, including a computer program. When the computer program is executed by a processor, it implements the wafer marking method as described in the first aspect above.

[0037] The additional aspects and advantages of the present application will be partially given in the following description, partially become obvious from the following description, or be understood through the practice of the present application. Description of the Drawings

[0038] The above and / or additional aspects and advantages of the present application will become obvious and easy to understand from the description of the embodiments in conjunction with the following drawings, where:

[0039] Figure 1 is one of the schematic flowcharts of the wafer marking method provided by the embodiments of the present application;

[0040] Figure 2 is one of the schematic diagrams of the regions of the wafer provided by the embodiments of the present application;

[0041] Figure 3 is the second of the schematic diagrams of the regions of the wafer provided by the embodiments of the present application;

[0042] Figure 4 is the third of the schematic diagrams of the regions of the wafer provided by the embodiments of the present application;

[0043] Figure 5 is the schematic structural diagram of the wafer marking device provided by the embodiments of the present application;

[0044] Figure 6 is the schematic structural diagram of the wafer marking machine provided by the embodiments of the present application;

[0045] Figure 7 is the second of the schematic flowcharts of the wafer marking method provided by the embodiments of the present application;

[0046] Figure 8 is the schematic structural diagram of the electronic device provided by the embodiments of the present application.

[0047] Reference numerals:

[0048] Reserved marking area 210, irradiation area 220 of the detection beam, marking content area 230;

[0049] Beam emission and reception component 610, control device 620, wafer moving device 630, marking component 640. Detailed implementation manners

[0050] Next, the technical solutions in the embodiments of the present application will be clearly described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present application.

[0051] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0052] The wafer marking method, wafer marking device, electronic device and readable storage medium provided in the embodiments of the present application are described in detail below in combination with the accompanying drawings through specific embodiments and their application scenarios.

[0053] Among them, the wafer marking method can be applied to a terminal, and can be specifically executed by hardware or software in the terminal.

[0054] The terminal includes, but is not limited to, a portable communication device such as a mobile phone or tablet computer with a touch-sensitive surface (e.g., a touch screen display and / or a touch pad). It should also be understood that in some embodiments, the terminal may not be a portable communication device, but a desktop computer with a touch-sensitive surface (e.g., a touch screen display and / or a touch pad).

[0055] In the following various embodiments, a terminal including a display and a touch-sensitive surface is described. However, it should be understood that the terminal may include one or more other physical user interface devices such as a physical keyboard, a mouse and a joystick.

[0056] The wafer marking method provided in the embodiment of the present application may be executed by an electronic device or a functional module or functional entity in the electronic device that can implement the wafer marking method. The electronic devices mentioned in the embodiment of the present application include but are not limited to mobile phones, tablet computers, computers, cameras, and wearable devices. The wafer marking method provided in the embodiment of the present application is described below using the electronic device as an example of the execution subject.

[0057] like Figure 1 As shown, the wafer marking method includes: step 110 and step 120.

[0058] Step 110: emitting a detection beam to the wafer to be marked, and receiving a reflected beam reflected by the wafer to be marked.

[0059] The wafer to be marked includes a reserved marking area 210 and a device area. The reserved marking area 210 is an area for marking. If the marking operation is performed in the device area, the wafer to be marked will be damaged.

[0060] In this step, a detection beam is emitted towards the wafer to be marked, and the reflected beam reflected by the irradiated area 220 of the detection beam on the wafer to be marked is received.

[0061] It should be noted that the area of the irradiated area 220 of the detection beam is smaller than the area of the reserved marking area 210, that is, the area of the reserved marking area 210 is larger than the irradiated area 220 of the detection beam, which can ensure that the irradiated area 220 of the detection beam is entirely located within the reserved marking area 210, effectively avoiding the loss of the device area of the wafer to be marked in subsequent marking operations.

[0062] For example, as Figure 2 shown, the area occupied by the irradiated area 220 of the detection beam is smaller than the area occupied by the reserved marking area 210, and the irradiated area 220 of the detection beam is entirely located within the reserved marking area 210.

[0063] Step 120: When it is determined based on the parameter information of the reflected beam that the irradiated area 220 of the detection beam is located within the reserved marking area 210, a marking content area 230 is determined from within the irradiated area 220 of the detection beam, and a marking operation is performed on the marking content area 230.

[0064] Among them, the parameter information of the reflected beam can be parameters such as light intensity and refractive index.

[0065] It should be noted that for the reserved marking area 210 and the device area on the wafer to be marked, the parameter information of the reflected beam reflected after receiving the detection beam is different, and the reserved marking area 210 and the device area can be distinguished based on the parameter information of the reflected beam.

[0066] In actual execution, based on the parameter information of the reflected beam, it can be determined whether the irradiated area 220 of the detection beam is entirely located within the reserved marking area 210, or whether a part of the irradiated area 220 of the detection beam is located within the device area, or whether the irradiated area 220 of the detection beam is entirely located within the device area.

[0067] In this step, when it is determined based on the parameter information of the reflected beam that the irradiated area 220 of the detection beam is entirely located within the reserved marking area 210, a marking content area 230 is determined from the current irradiated area 220 of the detection beam, and a marking operation is performed on the marking content area 230.

[0068] In actual execution, a high-energy density laser can be used to irradiate the marking content area 230 to print marking content such as text, symbols, or patterns on the marking content area 230.

[0069] It can be understood that the detection beam and the laser used for the marking operation are beams with different energy levels. The energy of the laser used for the marking operation is greater than that of the detection beam. When the detection beam irradiates the wafer to be marked, no mark will be left on the wafer to be marked.

[0070] It should be noted that the area of the marking content area 230 is smaller than the area of the irradiation area 220 of the detection beam. After determining that the entire irradiation area 220 of the detection beam is located within the reserved marking area 210, a smaller area of the marking content area 230 is selected from within the irradiation area 220 of the detection beam, which can ensure that the marking content area 230 is entirely located within the reserved marking area 210, thereby ensuring that subsequent marking operations will not exceed the reserved marking area 210 and damage the wafer.

[0071] For example, as Figure 2 shown, the area occupied by the irradiation area 220 of the detection beam is smaller than the area occupied by the reserved marking area 210, and the entire irradiation area 220 of the detection beam is located within the reserved marking area 210; the area of the marking content area 230 is smaller than the area of the irradiation area 220 of the detection beam, and the marking content area 230 is entirely located within the irradiation area 220 of the detection beam. Performing the marking operation in the marking content area 230 can prevent the marking laser from exceeding the reserved marking area 210 and ensure that the device area will not be damaged by the laser used for marking.

[0072] In this embodiment, before performing the wafer marking operation, a detection beam is emitted to irradiate the wafer to be marked, and the reflected beam reflected from the irradiation area 220 of the detection beam is received. According to the parameter information of the reflected beam, it is determined whether there is a device area in the current irradiation area of the detection beam. If the entire irradiation area 220 of the current detection beam is located within the reserved marking area 210, a marking content area 230 is determined within the irradiation area 220 of the detection beam for the marking operation, which can solve the problem of damaging the effective devices of the wafer due to the offset of the marking position or insufficient reserved marking position during the wafer marking operation.

[0073] According to the wafer marking method provided by the embodiments of the present application, by emitting a detection beam to irradiate the wafer to be marked before the marking operation and judging whether there is a device area in the current irradiation area of the detection beam according to the parameter information of the reflected beam reflected from the irradiation area 220 of the detection beam, the marking operation area can be accurately determined, ensuring that the wafer is marked at the reserved marking position, effectively avoiding the waste of wafer devices and problems in subsequent code reading and recognition.

[0074] In some embodiments, after receiving the reflected beam reflected by the wafer to be marked and before determining the marking content area 230 from within the irradiation area 220 of the detection beam, the wafer marking method may further include:

[0075] When it is determined based on the parameter information of the reflected beam that the irradiation area 220 of the detection beam includes the reserved marking area 210 and the device area, the wafer to be marked is controlled to move in the direction of the device area within the irradiation area 220 of the detection beam based on the parameter information of the reflected beam;

[0076] The detection beam is emitted to the wafer to be marked again, and the reflected beam reflected by the wafer to be marked is received.

[0077] In this embodiment, when it is determined according to the parameter information of the reflected beam that the irradiation area 220 of the current detection beam includes both the reserved marking area 210 and the device area, the marking operation is not performed. According to the parameter information of the reflected beam, the wafer to be marked is controlled to move in the direction of the device area within the irradiation area 220 of the detection beam, the position of the irradiation area 220 of the detection beam on the wafer to be marked is adjusted, the detection beam is emitted to the wafer to be marked again, the reflected beam reflected by the irradiation area 220 of the new detection beam is received, and it is determined whether the irradiation area 220 of the detection beam after the position adjustment is entirely within the reserved marking area 210.

[0078] It should be noted that when the wafer to be marked is controlled to move in the direction of the device area within the irradiation area 220 of the detection beam, the corresponding irradiation area 220 of the detection beam moves towards the reserved marking area 210 of the wafer to be marked.

[0079] For example, as Figure 3 shown, at the first moment, the irradiation area 220 of the detection beam includes the reserved marking area 210 and the device area. According to the position of the device area within the irradiation area 220 of the detection beam at the first moment, the wafer to be marked is controlled to move in the direction of the device area within the irradiation area 220 of the detection beam. The device area within the irradiation area 220 of the detection beam is located above, and the wafer to be marked is controlled to move upward.

[0080] After the wafer to be marked is controlled to move upward, as Figure 4 shown, at the second moment, the irradiation area 220 of the detection beam after the movement still includes the reserved marking area 210 and the device area. The device area within the irradiation area 220 of the detection beam is located below, and the wafer to be marked is controlled to move downward until the irradiation area 220 of the detection beam only includes the reserved marking area 210.

[0081] In actual implementation, controlling the wafer to be marked to move in the direction of the device area within the irradiation area 220 of the detection beam can be directly controlling the movement of the robotic arm holding the wafer to be marked, or controlling the movement of the beam emitting component that emits the detection beam.

[0082] In some embodiments, based on the parameter information of the reflected beam, controlling the movement of the wafer to be marked in the direction of the device area within the irradiation area 220 of the detection beam may include:

[0083] Based on the parameter information of the reflected beam, determining the area ratio of the device area within the irradiation area 220 of the detection beam at the current moment;

[0084] Based on the area ratio, determining the target movement distance;

[0085] Controlling the movement of the wafer to be marked in the direction of the device area within the irradiation area 220 of the detection beam according to the target movement distance.

[0086] In this embodiment, according to the area ratio of the device area within the irradiation area 220 of the detection beam at the current moment, determining the distance that the wafer to be marked needs to move, and controlling the wafer to be marked to move the target movement distance, so that only the reserved marking area 210 can be included within the subsequent irradiation area 220 of the detection beam.

[0087] For example, as Figure 3 shown, according to the area ratio of the device area within the irradiation area 220 of the detection beam at the current moment, determining that the target movement distance that the wafer to be marked needs to move is 2 mm, and the device area within the irradiation area is located above, controlling the wafer to be marked to move upward by 2 mm.

[0088] In some embodiments, after emitting the detection beam to the wafer to be marked again and receiving the reflected beam reflected by the wafer to be marked, the wafer marking method further includes:

[0089] When it is determined that the number of times the wafer to be marked moves exceeds the target number threshold, and based on the parameter information of the reflected beam, it is determined that the irradiation area 220 of the detection beam includes the reserved marking area 210 and the device area, an abnormal warning message is output.

[0090] In this embodiment, if the number of times of adjusting the position exceeds the target number threshold and still does not meet the marking requirement that the irradiation area 220 of the detection beam only includes the reserved marking area 210, the position is no longer adjusted at this time, and the wafer to be marked is directly sent back, and the corresponding abnormal warning message is output to indicate that there is an abnormality in the current marking process, and the equipment used for marking or the wafer to be marked needs to be checked by the staff.

[0091] For example, the target number threshold is 2 times. When the number of times of adjusting the position exceeds 2 times and still does not meet the marking requirement that the irradiation area 220 of the detection beam only includes the reserved marking area 210, an abnormal warning message is directly output, and the marking operation is not performed.

[0092] When the number of times the wafer to be marked moves exceeds the target number threshold, and the irradiation area 220 of the detection beam still includes the reserved marking area 210 and the device area, no marking operation is performed, and the position is no longer adjusted. Instead, an abnormal warning message is directly output, and manual inspection or other processes are introduced in a timely manner to avoid repeatedly adjusting the position many times, effectively improving the efficiency of wafer marking.

[0093] The following introduces a specific embodiment.

[0094] As Figure 7 shown, before the product enters the machine for marking operation, the machine emits a detection beam to irradiate the wafer to be marked, receives the parameter information of the reflected beam reflected back, and determines whether there are effective devices according to the different refractive indexes of the irradiation area, that is, whether the irradiation area 220 of the detection beam includes the device area.

[0095] If the measured refractive index has the refractive index of an effective device, according to the detected and calculated position of the effective device, move a corresponding distance in the opposite direction, that is, calculate the target movement distance, control the wafer to be marked to move in the direction of the device area within the irradiation area 220 of the detection beam, and then perform scanning. And if the position adjustment exceeds 3 times and still does not meet the marking requirements, the product is sent back and an abnormal warning message is output.

[0096] If the measured refractive index does not have the refractive index of an effective device, that is, the irradiation area 220 of the detection beam is located within the reserved marking area 210, the marking content area 230 is determined within the reserved marking area 210 for normal marking.

[0097] In this embodiment, after marking is completed, the wafer is rotated to the code reading position for code reading to determine whether the marking content is correct.

[0098] In some embodiments, the detection beam is a polarized light, the light intensity of the detection beam is greater than 40000 counts, the incident angle is 65° - 70°, and the observation wavelength point is 630 nm - 640 nm.

[0099] In actual implementation, the detection beam can be the light emitted by a xenon lamp entering a polarizing prism to generate polarized light, which is reflected on the irradiation area 220 and then passes through an analyzer prism and enters a detector to detect the parameter information of the reflected beam.

[0100] In this embodiment, by emitting a detection beam, the reserved marking area 210 and the device area on the wafer to be marked are detected. The light intensity of the detection beam is not less than 40000 counts, the incident angle is between 65° - 70°, and the observation wavelength point for receiving analysis is between 630 nm - 640 nm.

[0101] For example, the emission parameters of the detection beam are that the light intensity is greater than 40000 counts, the incident angle is equal to 67°, and the observed wavelength point is 633 nm.

[0102] Among them, 40000 counts means that in the spectral analysis of the detection beam, the number of photons measured between 630 nm and 640 nm exceeds 40000, and the spectral signal intensity is relatively high, which is convenient for analyzing the characteristics of light absorption, reflection, etc. of substances.

[0103] In actual implementation, the material of the reserved marking area 210 is silicon oxide, and there are various materials in the device area, including copper, silicon, silicon nitride, silicon oxide, etc.

[0104] When irradiating with a detection beam with a light intensity greater than 40000 counts, an incident angle of 67°, and an observed wavelength point of 633 nm, after reflection on the irradiation area 220, it passes through an analyzer prism and then enters the detector. When the refractive index calculated by the detector based on the parameter information of the detected reflected beam is 1.48 N / cm, the irradiation area 220 is the reserved marking area 210; when the calculated refractive index is 1.5 N / cm - 3.5 N / cm, the irradiation area 220 is the device area.

[0105] According to the parameter information of the reflected beam, it can be determined whether the irradiation area 220 of the current detection beam is completely located within the reserved marking area 210, that is, whether the irradiation area 220 of the current detection beam irradiates the device area.

[0106] In some embodiments, based on the parameter information of the reflected beam, determining that the irradiation area of the detection beam is located within the reserved marking area includes:

[0107] Based on the parameter information of the reflected beam, determining the refractive index of the irradiation area of the detection beam;

[0108] In the case where the refractive index is within the target refractive index range, determining that the irradiation area of the detection beam is located within the reserved marking area.

[0109] In this embodiment, the detection beam can be emitted with preset emission parameters, the reflected beam is received, the parameter information of the reflected beam is obtained, the refractive index corresponding to the irradiation area of the detection beam is calculated, and the material of the current irradiation area of the detection beam is judged according to this refractive index to judge whether the irradiation area of the detection beam is located within the reserved marking area.

[0110] In actual implementation, the detection beam can be the light emitted by a xenon lamp entering a polarizer to generate polarized light. After reflection on the irradiation area 220, it passes through an analyzer prism and then enters the detector to detect the parameter information of the reflected beam.

[0111] Among them, the target refractive index range is the refractive index corresponding to the reflected light beam after the reserved marking area receives the detection light beam. The corresponding values for the reserved marking areas of different materials are different and can be obtained through experimental measurement.

[0112] In some embodiments, the material of the reserved marking area 210 is a thin film material.

[0113] It can be understood that the material of the reserved marking area 210 is a thin film material. For example, thin film materials such as silicon oxide film and resin. There are various materials in the device area, including copper, silicon, silicon nitride, silicon oxide, etc. The beam parameter information reflected by the reserved marking area 210 is different from the beam parameter information reflected by the device area.

[0114] In some embodiments, the distance between the boundary of the marking content area 230 and the boundary of the irradiation area 220 of the detection light beam is 0.15 mm - 1 mm.

[0115] In this embodiment, the marking content area 230 is determined from within the irradiation area 220 of the detection light beam. The marking content area 230 can be located at the middle position of the irradiation area 220 of the detection light beam. The distance between the boundary of the marking content area 230 and the boundary of the irradiation area 220 of the detection light beam is 0.15 mm - 1 mm. The marking operation will not exceed the irradiation area 220 of the detection light beam, thereby avoiding the marking laser from exceeding the reserved marking area 210 and ensuring that the device area will not be damaged by the laser used for marking.

[0116] For example, when the irradiation area 220 of the detection light beam is located within the reserved marking area 210, the marking content area 230 is determined from within the irradiation area 220 of the detection light beam. The distance between the boundary of the marking content area 230 and the boundary of the irradiation area 220 of the detection light beam is 0.5 mm, and the marking operation is performed in the marking content area 230.

[0117] In some embodiments, the ratio of the area of the irradiation area 220 of the detection light beam to the area of the reserved marking area 210 is 0.4 - 0.5.

[0118] In this embodiment, the ratio of the area of the irradiation area 220 of the detection light beam to the area of the reserved marking area 210 is 0.4 - 0.5. The irradiation area 220 of the detection light beam can be completely located within the reserved marking area 210, and there can be a sufficient distance between the boundary of the irradiation area 220 of the detection light beam and the reserved marking area 210, which is convenient for subsequently determining the marking content area 230 within the irradiation area 220 of the detection light beam for marking.

[0119] The following introduces a specific embodiment.

[0120] Provide a wafer to be marked. The reserved marking area 210 of the wafer to be marked is coated with silicon oxide. As Figure 2 shown, a reserved marking area 210 with a length of 24 mm and a width of 4 mm is reserved on the wafer to be marked, and the other peripheral areas are device areas.

[0121] The irradiation area 220 of the detection beam is 17 mm long and 2.5 mm wide. The ratio of the area of the irradiation area 220 of the detection beam to the area of the reserved marking area 210 is 0.44.

[0122] According to the parameter information of the reflected beam, it is judged that the current irradiation area 220 of the detection beam is completely located within the reserved marking area 210. A marking content area 230 with a length of 16 mm and a width of 1.5 mm is determined from the irradiation area 220 of the detection beam for marking.

[0123] In this embodiment, if the reflected beam of the effective device is measured, according to the detected and calculated position of the effective device, move a corresponding distance in the opposite direction. If the position adjustment exceeds 3 times and still does not meet the marking requirements, return the product and output an abnormal warning message.

[0124] By emitting a detection beam to irradiate the wafer to be marked, according to the parameter information of the reflected beam, it is judged whether there is a device area in the current irradiation area of the detection beam, accurately determine the marking operation area (i.e., the marking content area 230), ensure that the wafer is marked at the reserved marking position, and effectively avoid waste of wafer devices and problems in subsequent code reading and recognition.

[0125] In the embodiment of the present application, the execution subject of the wafer marking method provided may be a wafer marking device. In the embodiment of the present application, taking the wafer marking device executing the wafer marking method as an example, the wafer marking device provided by the embodiment of the present application is described.

[0126] The embodiment of the present application also provides a wafer marking device.

[0127] As Figure 5 shown, the wafer marking device includes:

[0128] A first processing module 510, configured to emit a detection beam to the wafer to be marked and receive the reflected beam reflected by the wafer to be marked. The wafer to be marked includes a reserved marking area 210 and a device area, and the area of the irradiation area 220 of the detection beam is smaller than the area of the reserved marking area 210;

[0129] A second processing module 520, configured to determine a marking content area 230 from within the illumination area 220 of the detection beam and perform a marking operation on the marking content area 230 when it is determined based on the parameter information of the reflected beam that the illumination area 220 of the detection beam is located within the reserved marking area 210, wherein the area of the marking content area 230 is smaller than the area of the illumination area 220 of the detection beam.

[0130] According to the wafer marking device provided by the embodiments of the present application, before the marking operation, a detection beam is emitted to irradiate the wafer to be marked, and based on the parameter information of the reflected beam reflected from the illumination area 220 of the detection beam, it can be determined whether there is a device area in the current illumination area of the detection beam, so as to accurately determine the marking operation area, ensure that the wafer marking is at the reserved marking position, and effectively avoid waste of wafer devices and problems in subsequent code reading and recognition.

[0131] In some embodiments, after receiving the reflected beam reflected by the wafer to be marked and before determining the marking content area 230 from within the illumination area 220 of the detection beam, the second processing module 520 is configured to control the wafer to be marked to move in the direction of the device area within the illumination area 220 of the detection beam based on the parameter information of the reflected beam when it is determined based on the parameter information of the reflected beam that the illumination area 220 of the detection beam includes the reserved marking area 210 and the device area;

[0132] Emit a detection beam to the wafer to be marked again and receive the reflected beam reflected by the wafer to be marked.

[0133] In some embodiments, after emitting a detection beam to the wafer to be marked again and receiving the reflected beam reflected by the wafer to be marked, the second processing module 520 is further configured to output an abnormal warning message when it is determined that the number of times the wafer to be marked moves exceeds the target number threshold and it is determined based on the parameter information of the reflected beam that the illumination area 220 of the detection beam includes the reserved marking area 210 and the device area.

[0134] In some embodiments, the detection beam is a polarized light, the light intensity of the detection beam is greater than 40000 counts, the incident angle is 65° - 70°, and the observation wavelength point is 630 nm - 640 nm.

[0135] In some embodiments, the second processing module 520 is configured to determine the refractive index of the illumination area of the detection beam based on the parameter information of the reflected beam;

[0136] When the refractive index is within the target refractive index range, it is determined that the illumination area of the detection beam is located within the reserved marking area.

[0137] In some embodiments, the material of the reserved marking area 210 is a thin film material.

[0138] In some embodiments, the distance between the boundary of the marking content area 230 and the boundary of the irradiation area 220 of the detection beam is 0.15 mm - 1 mm.

[0139] In some embodiments, the ratio of the area of the irradiation area 220 of the detection beam to the area of the reserved marking area 210 is 0.4 - 0.5.

[0140] The wafer marking device in the embodiments of the present application may be an electronic device or a component in an electronic device, such as an integrated circuit or a chip. The electronic device may be a terminal or other devices other than the terminal. Exemplarily, the electronic device may be a mobile phone, a tablet computer, a laptop computer, a handheld computer, a vehicle-mounted electronic device, a Mobile Internet Device (MID), an augmented reality (AR) / virtual reality (VR) device, a robot, a wearable device, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA), etc., and may also be a server, a Network Attached Storage (NAS), a personal computer (PC), a television (TV), a teller machine, or a self-service machine, etc. The embodiments of the present application do not make specific limitations.

[0141] The wafer marking device in the embodiments of the present application may be a device with an operating system. The operating system may be an Android operating system, an IOS operating system, or other possible operating systems. The embodiments of the present application do not make specific limitations.

[0142] The wafer marking device provided by the embodiments of the present application can implement Figure 1 、 Figure 7 the various processes implemented by the method embodiments. To avoid repetition, they will not be elaborated here.

[0143] The embodiments of the present application further provide a wafer marking machine, which can perform the above-mentioned wafer marking method for marking operations.

[0144] As Figure 6 shown, the wafer marking machine includes: a beam emission and reception component 610, a marking component 640, a wafer moving device 630, and a control device 620.

[0145] Among them, the beam emitting and receiving component 610 is used to emit a detection beam to the wafer to be marked and receive the reflected beam reflected by the wafer to be marked; the marking component 640 is used to perform the marking operation.

[0146] In actual implementation, the beam emitting and receiving component 610 includes a beam emitting component and a beam receiving component. The beam emitting component is used to emit a detection beam, and the beam receiving component is used to receive the reflected beam reflected by the wafer to be marked. The energy of the detection beam emitted by the beam emitting component is less than the energy of the laser used by the marking component 640. When the detection beam irradiates the wafer to be marked, no mark will be left on the wafer to be marked.

[0147] In this embodiment, the wafer to be marked is placed on the wafer moving device 630, and the wafer moving device 630 is used to move the wafer to be marked to the position of the beam emitting and receiving component 610.

[0148] The wafer moving device 630 may include a manipulator and a calibrator. The manipulator is used to grasp and transfer the wafer, and the calibrator is used to adjust and rotate the position of the wafer, supporting rotational, lateral, and longitudinal position movements.

[0149] The wafer to be marked includes a reserved marking area 210 and a device area, and the area of the irradiation area 220 of the detection beam is smaller than the area of the reserved marking area 210.

[0150] For example, as Figure 2 shown, the area occupied by the irradiation area 220 of the detection beam is smaller than the area occupied by the reserved marking area 210, and the irradiation area 220 of the detection beam is entirely located within the reserved marking area 210; the area of the marking content area 230 is smaller than the area of the irradiation area 220 of the detection beam, and the marking content area 230 is entirely located within the irradiation area 220 of the detection beam. Performing the marking operation in the marking content area 230 can prevent the marking laser from exceeding the reserved marking area 210 and ensure that the device area will not be damaged by the laser used for marking.

[0151] The control device 620 is electrically connected to the beam emitting and receiving component 610, the marking component 640, and the wafer moving device 630. When it is determined based on the parameter information of the reflected beam that the irradiation area 220 of the detection beam is located within the reserved marking area 210, the control device 620 is used to determine the marking content area 230 from within the irradiation area 220 of the detection beam, and control the marking component 640 to perform the marking operation on the marking content area 230. The area of the marking content area 230 is smaller than the area of the irradiation area 220 of the detection beam.

[0152] In this embodiment, before the wafer marking operation, a detection beam is emitted to irradiate the wafer to be marked, and the reflected beam reflected from the irradiated area 220 of the detection beam is received. According to the parameter information of the reflected beam, it is judged whether there is a device area in the current irradiated area of the detection beam. If the entire irradiated area 220 of the current detection beam is located within the reserved marking area 210, a marking content area 230 is determined within the irradiated area 220 of the detection beam for the marking operation, which can solve the problems of marking position deviation or insufficient reserved marking position during the wafer marking operation and damaging the effective devices of the wafer.

[0153] According to the wafer marking machine provided by the embodiment of the present application, before the marking operation, a detection beam is emitted to irradiate the wafer to be marked. According to the parameter information of the reflected beam reflected from the irradiated area 220 of the detection beam, it is judged whether there is a device area in the current irradiated area of the detection beam, so that the marking operation area can be accurately determined, ensuring that the wafer is marked at the reserved marking position, effectively avoiding the waste of wafer devices and problems in subsequent code reading and identification.

[0154] In some embodiments, the detection beam is a polarized light, the light intensity of the detection beam is greater than 40000 counts, the incident angle is 65° - 70°, and the observation wavelength point is 630nm - 640nm.

[0155] In some embodiments, the distance between the boundary of the marking content area 230 and the boundary of the irradiated area 220 of the detection beam is 0.15mm - 1mm.

[0156] In some embodiments, the ratio of the area of the irradiated area 220 of the detection beam to the area of the reserved marking area 210 is 0.4 - 0.5.

[0157] In some embodiments, the wafer marking machine may further include:

[0158] A code reader, which is electrically connected to the control device 620. The wafer moving device 630 is used to move the marked wafer to the code reader, and the code reader is used to read the marking content of the marked wafer.

[0159] In this embodiment, after the marking is completed, the wafer moving device 630 rotates the wafer to the code reading position for code reading to judge whether the marking content is correct.

[0160] In some embodiments, after receiving the reflected light beam reflected by the wafer to be marked, before determining the marking content area 230 within the irradiation area 220 of the detection light beam, when the control device 620 determines that the irradiation area 220 of the detection light beam includes the reserved marking area 210 and the device area based on the parameter information of the reflected light beam, the control device 620 controls the wafer moving device 630 to move the wafer to be marked in the direction of the device area within the irradiation area 220 of the detection light beam based on the parameter information of the reflected light beam;

[0161] The control beam transmitting and receiving component 610 is controlled to emit a detection light beam to the wafer to be marked again and receive the reflected light beam reflected by the wafer to be marked.

[0162] In this embodiment, when it is determined according to the parameter information of the reflected light beam that the current irradiation area 220 of the detection light beam includes both the reserved marking area 210 and the device area, the marking operation is not performed. According to the parameter information of the reflected light beam, the wafer to be marked is controlled to move in the direction of the device area within the irradiation area 220 of the detection light beam, the position of the irradiation area 220 of the detection light beam on the wafer to be marked is adjusted, the detection light beam is emitted to the wafer to be marked again, the reflected light beam reflected by the new irradiation area 220 of the detection light beam is received, and it is determined whether the adjusted irradiation area 220 of the detection light beam is entirely located within the reserved marking area 210.

[0163] In some embodiments, the control device 620 is configured to determine the area ratio of the device area within the irradiation area 220 of the detection light beam at the current moment based on the parameter information of the reflected light beam;

[0164] Based on the area ratio, determine the target moving distance;

[0165] According to the target moving distance, the control device 620 controls the wafer moving device 630 to move the wafer to be marked in the direction of the device area within the irradiation area 220 of the detection light beam.

[0166] In some embodiments, the control device 620 is further configured to output an abnormal warning message when it is determined that the number of times the wafer to be marked moves exceeds the target number threshold and it is determined based on the parameter information of the reflected light beam that the irradiation area 220 of the detection light beam includes the reserved marking area 210 and the device area.

[0167] In this embodiment, if the number of times of adjusting the position exceeds the target number threshold and the marking requirement that the irradiation area 220 of the detection light beam only includes the reserved marking area 210 is still not satisfied, the position is no longer adjusted at this time, and the wafer to be marked is directly sent back, and the corresponding abnormal warning message is output to indicate to the staff that there is an abnormality in the current marking process and the equipment used for marking or the wafer to be marked needs to be inspected.

[0168] In some embodiments, such asFigure 8 As shown in Figure 8 , an embodiment of the present application further provides an electronic device 800, which includes a processor 801, a memory 802, and a computer program stored on the memory 802 and executable on the processor 801. When the program is executed by the processor 801, it implements each process of the above-mentioned embodiment of the wafer marking method and can achieve the same technical effect. To avoid repetition, it will not be elaborated here.

[0169] It should be noted that the electronic device in the embodiment of the present application includes the above-mentioned mobile electronic device and non-mobile electronic device.

[0170] An embodiment of the present application further provides a non-transitory computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, it implements each process of the above-mentioned embodiment of the wafer marking method and can achieve the same technical effect. To avoid repetition, it will not be elaborated here.

[0171] Among them, the processor is the processor in the electronic device described in the above embodiment. The readable storage medium includes computer-readable storage media such as computer read-only memory ROM, random access memory RAM, magnetic disk or optical disc, etc.

[0172] An embodiment of the present application further provides a computer program product, including a computer program, which implements the above-mentioned wafer marking method when executed by a processor.

[0173] Among them, the processor is the processor in the electronic device described in the above embodiment. The readable storage medium includes computer-readable storage media such as computer read-only memory ROM, random access memory RAM, magnetic disk or optical disc, etc.

[0174] Another embodiment of the present application provides a chip, which includes a processor and a communication interface. The communication interface is coupled to the processor. The processor is used to run programs or instructions to implement each process of the above-mentioned embodiment of the wafer marking method and can achieve the same technical effect. To avoid repetition, it will not be elaborated here.

[0175] It should be understood that the chip mentioned in the embodiment of the present application can also be referred to as a system-on-chip, system chip, chip system, or system-on-chip, etc.

[0176] It should be noted that in this article, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, such that a process, method, article or device comprising a series of elements not only includes those elements but also other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the phrase "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or device comprising that element. In addition, it should be noted that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in the reverse order according to the functions involved. For example, the described methods may be performed in an order different from that described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0177] Through the description of the above embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus a necessary general hardware platform. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation. Based on this understanding, the technical solution of the present application, in essence or the part that contributes to the prior art, can be embodied in the form of a computer software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to enable a terminal (which can be a mobile phone, computer, server, or network device, etc.) to execute the methods described in various embodiments of the present application.

[0178] The embodiments of the present application have been described above in conjunction with the accompanying drawings. However, the present application is not limited to the above specific embodiments. The above specific embodiments are merely illustrative and not restrictive. Under the inspiration of the present application, those of ordinary skill in the art can also make many forms without departing from the purpose of the present application and the scope protected by the claims, and all of them belong to the protection scope of the present application.

[0179] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0180] Although embodiments of the present application have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present application. The scope of the present application is defined by the claims and their equivalents.

Claims

1. A wafer marking method, characterized in that, Including: Emitting a detection beam to a wafer to be marked and receiving a reflected beam reflected by the wafer to be marked. The wafer to be marked includes a reserved marking area and a device area, and the area of the irradiation area of the detection beam is smaller than the area of the reserved marking area; When it is determined that the irradiation area of the detection beam is located within the reserved marking area based on the parameter information of the reflected beam, determining a marking content area from within the irradiation area of the detection beam and performing a marking operation on the marking content area. The area of the marking content area is smaller than the area of the irradiation area of the detection beam.

2. The wafer marking method according to claim 1, characterized in that, After receiving the reflected beam reflected by the wafer to be marked and before determining the marking content area from within the irradiation area of the detection beam, the method further includes: When it is determined that the irradiation area of the detection beam includes the reserved marking area and the device area based on the parameter information of the reflected beam, controlling the wafer to be marked to move in the direction of the device area within the irradiation area of the detection beam based on the parameter information of the reflected beam; Emitting the detection beam to the wafer to be marked again and receiving the reflected beam reflected by the wafer to be marked.

3. The wafer marking method according to claim 2, wherein After emitting the detection beam to the wafer to be marked again and receiving the reflected beam reflected by the wafer to be marked, the method further includes: When it is determined that the number of times the wafer to be marked moves exceeds a target number threshold and it is determined that the irradiation area of the detection beam includes the reserved marking area and the device area based on the parameter information of the reflected beam, outputting an abnormal warning message.

4. The wafer marking method according to claim 1, wherein The detection beam is a polarized light, the light intensity of the detection beam is greater than 40000 counts, the incident angle is 65° - 70°, and the observation wavelength point is 630 nm - 640 nm.

5. The wafer marking method according to claim 1, characterized in that, Determining that the irradiation area of the detection beam is located within the reserved marking area based on the parameter information of the reflected beam includes: Determining the refractive index of the irradiation area of the detection beam based on the parameter information of the reflected beam; When the refractive index is within a target refractive index range, determining that the irradiation area of the detection beam is located within the reserved marking area.

6. The wafer marking method according to any one of claims 1-5, characterized in that, The material of the reserved marking area is a thin film material.

7. The wafer marking method according to any one of claims 1-5, characterized in that, The distance between the boundary of the marking content area and the boundary of the irradiation area of the detection beam is 0.15 mm - 1 mm.

8. The wafer marking method according to any one of claims 1-5, characterized in that, The ratio of the area of the irradiation area of the detection beam to the area of the reserved marking area is 0.4 - 0.

5.

9. A wafer marking device, characterized in that, Including: A first processing module for emitting a detection beam to a wafer to be marked and receiving a reflected beam reflected by the wafer to be marked. The wafer to be marked includes a reserved marking area and a device area, and the area of the irradiation area of the detection beam is smaller than the area of the reserved marking area; A second processing module, configured to, when determining that the irradiation area of the detection beam is located within the reserved marking area based on the parameter information of the reflected beam, determine a marking content area from within the irradiation area of the detection beam, and perform a marking operation on the marking content area, where the area of the marking content area is smaller than the area of the irradiation area of the detection beam.

10. A wafer marking machine, characterized in that, Comprising: a beam transmitting and receiving component and a marking component; a wafer moving device, on which a wafer to be marked is placed, the wafer moving device being configured to move the wafer to be marked to the beam transmitting and receiving component, the beam transmitting and receiving component being configured to emit a detection beam to the wafer to be marked and receive a reflected beam reflected by the wafer to be marked, the wafer to be marked including a reserved marking area and a device area, and the area of the irradiation area of the detection beam being smaller than the area of the reserved marking area; a control device, the control device being electrically connected to the beam transmitting and receiving component, the marking component, and the wafer moving device, the control device being configured to, when determining that the irradiation area of the detection beam is located within the reserved marking area based on the parameter information of the reflected beam, determine a marking content area from within the irradiation area of the detection beam, and control the marking component to perform a marking operation on the marking content area, where the area of the marking content area is smaller than the area of the irradiation area of the detection beam.

11. The wafer marking machine according to claim 10, characterized in that, The detection beam is a polarized light, the light intensity of the detection beam is greater than 40000 counts, the incident angle is 65° - 70°, and the observation wavelength point is 630 nm - 640 nm.

12. The wafer marking machine according to claim 10, wherein, The distance between the boundary of the marking content area and the boundary of the irradiation area of the detection beam is 0.15 mm - 1 mm.

13. The wafer marking machine according to claim 10, characterized in that, The ratio of the area of the irradiation area of the detection beam to the area of the reserved marking area is 0.4 - 0.

5.

14. The wafer marking machine according to any one of claims 10-13, characterized in that, Further comprising: a barcode reader, the barcode reader being electrically connected to the control device, the wafer moving device being configured to move the marked wafer to the barcode reader, and the barcode reader being configured to read the marking content of the marked wafer.

15. An electronic device, comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, When the processor executes the program, it implements the wafer marking method according to any one of claims 1 - 8.

16. A non-transitory computer-readable storage medium storing a computer program thereon, characterized in that, When the computer program is executed by the processor, it implements the wafer marking method according to any one of claims 1 - 8.

17. A computer program product comprising a computer program, characterized in that, When the computer program is executed by the processor, it implements the wafer marking method according to any one of claims 1 - 8.

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