A chamber structure for semiconductor wafer processing

Abstract

The application relates to the technical field of semiconductor wafer processing, in particular to a chamber structure for semiconductor wafer processing, which comprises a shell, two upper and lower partition layers are arranged in the shell, and the internal space of the shell forms an upper chamber, a middle chamber and a lower chamber under the action of the two partition layers; one side of the shell is open; a heat insulation door is hinged to the open side of the shell; one end of the partition layer away from the heat insulation door penetrates the shell; a slot is arranged on the side of the partition layer away from the heat insulation door; a through hole for moving a carrier for holding a semiconductor wafer is arranged on the upper surface of the partition layer; a partition plate is arranged in the slot; and a cold and hot adjusting piece for adjusting the temperature difference of the partition plate is arranged at one end of the partition plate outside the slot. The application has the following beneficial effects: the upper surface and the lower surface of the partition plate do not have a large temperature difference, the stress caused by the large temperature difference is prevented, the deformation and damage of the partition plate are prevented, and the partition plate is protected.

Description

TECHNICAL FIELD

[0001] The application is a kind of chamber structure for semiconductor wafer processing, belonging to the technical field of semiconductor wafer processing. BACKGROUND

[0002] In the semiconductor manufacturing process, the temperature control of the reaction chamber is extremely strict for processes such as oxidation, thin film deposition and annealing. Especially for larger diameter wafers, temperature changes can cause significant warping problems. For example, the thermal expansion coefficient of silicon is higher than that of silicon dioxide, so during the heating process, silicon will expand faster than silicon dioxide, causing the wafer surface to present a concave shape. Rapid heating and cooling can exacerbate this warping. In order to reduce the impact of wafer warping, multiple dedicated chambers are set up to achieve different temperature conditions for the process, for example, one chamber is used for high temperature reaction, another chamber is used for preheating, and another chamber is used for cooling. According to the specific process requirements, the use of these chambers is flexibly selected and combined, which not only can effectively save equipment costs, but also can greatly simplify the process flow of semiconductor processing. This multi-chamber design allows each step to be performed under optimal conditions, thereby improving overall production efficiency and product quality.

[0003] Two partition layers are installed between the above three chambers, and then a partition plate is inserted into the slot of the partition layer. By pushing and pulling the partition plate, the carrier of the semiconductor wafer can be easily transferred between the three chambers. Because there is a large temperature difference between the three chambers, there is a large temperature difference between the upper surface of the partition plate and the lower surface of the partition plate during the partitioning of the space between the two adjacent chambers. The partition plate is easily deformed and damaged due to stress, affecting the service life of the partition plate. SUMMARY

[0004] In view of the deficiencies of the prior art, the purpose of the present application is to provide a kind of chamber structure for semiconductor wafer processing to solve the problems raised in the above background.

[0005] In order to achieve the above object, the application is realized by the following technical scheme: a cavity structure for semiconductor wafer processing, comprising a shell, two spaced layers arranged vertically are installed in the shell, the internal space of the shell forms an upper cavity, a middle cavity and a lower cavity under the action of the two spaced layers, a first heating element for providing heat source for high temperature reaction of the semiconductor wafer is installed in the upper cavity, a second heating element for providing heat source for preheating of the semiconductor wafer is installed in the middle cavity, a cooling element for providing cold source for cooling of the semiconductor wafer is installed in the lower cavity, one side of the shell is open, a heat insulation door is hinged to the open side of the shell, one end of the spaced layer away from the heat insulation door penetrates the shell, a slot is formed on the side of the spaced layer away from the heat insulation door, a through hole is formed on the upper surface of the spaced layer for moving the carrier holding the semiconductor wafer, a partition plate is inserted into the slot, the partition plate is a hollow structure, a cold and hot adjusting element for adjusting the temperature difference of the partition plate is installed at one end of the partition plate outside the slot.

[0006] Specifically, the cold and hot adjusting element comprises a cold vertical pipe, the side of the shell away from the heat insulation door is provided with the cold vertical pipe, two first ball valves are installed on the outer surface of the cold vertical pipe, a first hose is installed at one end of the first ball valve away from the cold vertical pipe, the end of the first hose away from the first ball valve is connected and communicated with the partition plate, a third ball valve and a second ball valve are installed on the upper end and the lower end of the cold vertical pipe respectively, the outlet end of a cold medium circulating pump is connected with the third ball valve through a pipeline, the inlet end of the cold medium circulating pump is connected and communicated with a cold medium tank through a cold medium pipe, a hot vertical pipe is arranged on one side of the cold vertical pipe, two fifth ball valves are installed on the outer surface of the hot vertical pipe, a second hose is installed at one end of the fifth ball valve away from the hot vertical pipe, the end of the second hose away from the fifth ball valve is connected and communicated with the partition plate, a fourth ball valve and a sixth ball valve are installed on the upper end and the lower end of the hot vertical pipe respectively, the outlet end of a hot medium circulating pump is connected with the fourth ball valve through a pipeline, the inlet end of the hot medium circulating pump is connected and communicated with a hot medium tank through a hot medium pipe, the second ball valve is connected and communicated with the hot medium tank through a first return pipe, and the sixth ball valve is connected and communicated with the cold medium tank through a second return pipe.

[0007] Specifically, the upper end of the cold medium tank is open, a detachable first tank cover is installed on the upper end of the cold medium tank, the upper end of the hot medium tank is open, a detachable second tank cover is installed on the upper end of the hot medium tank, and a third heating element for providing heat source for the medium in the hot medium tank is installed on the lower surface of the second tank cover.

[0008] Specifically, a handle is installed at the middle position of the side of the partition plate away from the heat insulation door, and the handle is a U-shaped structure.

[0009] Specifically, the outer surface of the cold vertical pipe and the outer surface of the hot vertical pipe are both provided with two first pipe joints, the first pipe joint on the cold vertical pipe is connected with the first ball valve, the first pipe joint on the hot vertical pipe is connected with the fifth ball valve, the side of the partition plate away from the heat insulation door is provided with two second pipe joints, the second pipe joints are communicated with the inner space of the partition plate, and the two second pipe joints on the partition plate are respectively connected with the first hose and the second hose.

[0010] Specifically, the inner wall of the upper chamber, the inner wall of the middle chamber and the inner wall of the lower chamber are all provided with a first heat insulation layer, and the side of the heat insulation door facing the shell is provided with a second heat insulation layer.

[0011] Specifically, the bottom of the shell is provided with a lower through hole for mounting a driving member for driving the movement of the semiconductor wafer carrier, the bottom of the first heat insulation layer in the lower chamber is provided with an upper through hole, and the lower through hole and the upper through hole are concentrically arranged and have the same inner diameter.

[0012] Specifically, the first connecting lug is connected and fixed to the middle position of one side of the heat insulation door, the second connecting lug is mounted on one side of the shell and matched with the first connecting lug, and the through hole for inserting the lock is arranged on one side of the first connecting lug and one side of the second connecting lug.

[0013] Specifically, the side of the shell away from the heat insulation door is provided with two strip-shaped openings arranged in an up-down manner, and the partition layer is mounted in the strip-shaped openings.

[0014] The beneficial effects of the present application are as follows:

[0015] 1. The first hose is mounted between the cold vertical pipe and the partition plate, and the second hose is mounted between the hot vertical pipe and the partition plate, so that the partition plate is pulled out of the slot when the positions of the cold vertical pipe and the hot vertical pipe are limited.

[0016] 2. When the partition plate needs to be heated, the first ball valve, the second ball valve, the fourth ball valve and the fifth ball valve are opened, the third ball valve and the sixth ball valve are closed, and then the hot medium circulating pump is operated, so that the high-temperature medium in the hot medium tank is delivered into the inner space of the partition plate, so that the partition plate is heated, when the partition plate needs to be cooled, the first ball valve, the third ball valve, the fifth ball valve and the sixth ball valve are opened, the second ball valve and the fourth ball valve are closed, and then the cold medium circulating pump is operated, so that the low-temperature medium in the cold medium tank is delivered into the inner space of the partition plate, so that the partition plate is cooled, so that there is no large temperature difference between the upper surface and the lower surface of the partition plate, and the stress and deformation of the partition plate caused by the large temperature difference are prevented, so that the partition plate is protected.

[0017] 3. By controlling the on-off of the first ball valve, the second ball valve, the third ball valve, the fourth ball valve, the fifth ball valve and the sixth ball valve, and cooperating with the pipeline such as the hot vertical pipe and the cold vertical pipe, the hot medium flow passage and the cold medium passage can be switched, which is beneficial to reduce the use of the pipeline. BRIEF DESCRIPTION OF DRAWINGS

[0018] Other features, objects, and advantages of the application will become more apparent from the following detailed description of non-limiting embodiments, when read in conjunction with the accompanying drawings:

[0019] Figure 1 It is a structural schematic diagram of a chamber structure for semiconductor wafer processing according to the present application;

[0020] Figure 2 It is an assembly schematic diagram of the partition, the partition layer and the shell in the chamber structure for semiconductor wafer processing according to the present application;

[0021] Figure 3 It is a cross-sectional assembly schematic diagram of the partition, the partition layer and the shell in the chamber structure for semiconductor wafer processing according to the present application;

[0022] Figure 4 It is an assembly schematic diagram of the heat insulation door and the shell in the chamber structure for semiconductor wafer processing according to the present application;

[0023] Figure 5 It is a perspective view of the partition layer in the chamber structure for semiconductor wafer processing according to the present application;

[0024] In the figure: 1, shell, 2, heat insulation door, 3, first connecting lug, 4, second connecting lug, 5, partition plate, 6, first hose, 7, first ball valve, 8, second ball valve, 9, first return pipe, 10, second return pipe, 11, cold vertical pipe, 12, third ball valve, 13, cold medium circulating pump, 14, cold medium tank, 15, first tank cover, 16, cold medium pipe, 17, second tank cover, 18, hot medium tank, 19, hot medium pipe, 20, hot medium circulating pump, 21, fourth ball valve, 22, fifth ball valve, 23, second hose, 24, hot vertical pipe, 25, sixth ball valve, 26, partition layer, 27, handle, 28, second heat insulation layer, 29, first heat insulation layer, 30, strip-shaped port, 31, lower through port, 32, insertion slot, 33, through port. DETAILED DESCRIPTION

[0025] In order to make the technical means, creative features, purposes and effects achieved by the present application easy to understand, the present application will be further described below in conjunction with specific embodiments.

[0026] Please refer to Figures 1-4The application provides a technical scheme: a chamber structure for semiconductor wafer processing, which comprises a shell 1, two upper and lower partition layers 26 are arranged in the shell 1, and the internal space of the shell 1 forms an upper chamber, a middle chamber and a lower chamber under the action of the two partition layers 26; a first heating piece for providing a heat source for high-temperature reaction of the semiconductor wafer is arranged in the upper chamber; a second heating piece for providing a heat source for preheating of the semiconductor wafer is arranged in the middle chamber; a cooling piece for providing a cold source for cooling of the semiconductor wafer is arranged in the lower chamber; one side of the shell 1 is open; a heat insulation door 2 is hingedly connected to the open side of the shell 1; a first heat insulation layer 29 is arranged on the inner wall of the upper chamber, the inner wall of the middle chamber and the inner wall of the lower chamber; a second heat insulation layer 28 is arranged on the side of the heat insulation door 2 facing the shell 1; a lower through hole 31 for arranging a driving piece for driving the movement of a semiconductor wafer carrier is arranged at the bottom of the shell 1; the driving piece can be a pneumatic cylinder, a hydraulic cylinder or the like; the first heat insulation layer 29 in the lower chamber is provided with an upper through hole; the lower through hole 31 and the upper through hole are concentrically arranged and have the same inner diameter; a first connecting lug 3 is fixedly connected to the middle position of one side of the heat insulation door 2; a second connecting lug 4 is arranged on one side of the shell 1 and matched with the first connecting lug 3; a through hole for inserting a lock is arranged on one side of the first connecting lug 3 and one side of the second connecting lug 4; the first connecting lug 3 and the second connecting lug 4 are connected by the lock, so that the relative position of the heat insulation door 2 and the shell 1 is kept unchanged.

[0027] Referring to Figures 2-4 One end of the partition layer 26 away from the heat insulation door 2 penetrates the shell 1, wherein one side of the shell 1 away from the heat insulation door 2 is provided with two upper and lower strip-shaped openings 30, one end of the partition layer 26 is arranged in the strip-shaped opening 30, one side of the partition layer 26 away from the heat insulation door 2 is provided with a slot 32, the upper surface of the partition layer 26 is provided with a through hole 33 for moving the carrier for holding the semiconductor wafer, and a partition plate 5 is arranged in the slot 32; the partition plate 5 is a hollow structure, a handle 27 is arranged in the middle position of one side of the partition plate 5 away from the heat insulation door 2, and the handle 27 is a U-shaped structure and provides a grip for pushing and pulling the partition plate 5.

[0028] Referring to Figure 1 and Figure 2, the side of the shell 1 away from the heat insulation door 2 is provided with a cold vertical pipe 11, the outer surface of the cold vertical pipe 11 is provided with two first ball valves 7, the end of the first ball valve 7 away from the cold vertical pipe 11 is provided with a first hose 6, the end of the first hose 6 away from the first ball valve 7 is connected with the partition plate 5 in communication, one side of the cold vertical pipe 11 is provided with a hot vertical pipe 24, the outer surface of the hot vertical pipe 24 is provided with two fifth ball valves 22, the end of the fifth ball valve 22 away from the hot vertical pipe 24 is provided with a second hose 23, the end of the second hose 23 away from the fifth ball valve 22 is connected with the partition plate 5 in communication, the outer surface of the cold vertical pipe 11 and the outer surface of the hot vertical pipe 24 are both provided with two first pipe joints, the first pipe joint on the cold vertical pipe 11 is connected with the first ball valve 7 in communication, the first pipe joint on the hot vertical pipe 24 is connected with the fifth ball valve 22 in communication, the partition plate 5 is provided with two second pipe joints on the side away from the heat insulation door 2, the second pipe joint is connected with the internal space of the partition plate 5 in communication, the two second pipe joints on one partition plate 5 are connected with the first hose 6 and the second hose 23 in communication respectively, the design of the first pipe joint and the second pipe joint facilitates the installation of the first hose 6, the second hose 23, the first ball valve 7 and the fifth ball valve 22.

[0029] Referring to Figures 1-5The upper end and the lower end of the cold vertical pipe 11 are respectively provided with a third ball valve 12 and a second ball valve 8, the third ball valve 12 is connected with the outlet end of a cold medium circulating pump 13 through a pipeline, the inlet end of the cold medium circulating pump 13 is connected with a cold medium tank 14 through a cold medium pipe 16, the upper end of the cold medium tank 14 is open, the upper end of the cold medium tank 14 is provided with a detachable first tank cover 15, the lower surface of the first tank cover 15 is provided with a refrigeration device for providing a cold source for the cold medium, the upper end and the lower end of the hot vertical pipe 24 are respectively provided with a fourth ball valve 21 and a sixth ball valve 25, the fourth ball valve 21 is connected with the outlet end of a hot medium circulating pump 20 through a pipeline, the inlet end of the hot medium circulating pump 20 is connected with a hot medium tank 18 through a hot medium pipe 19, the upper end of the hot medium tank 18 is open, the upper end of the hot medium tank 18 is provided with a detachable second tank cover 17, the lower surface of the second tank cover 17 is provided with a third heating device for providing a heat source for the medium in the hot medium tank 18, the second ball valve 8 is connected with the hot medium tank 18 through a first return pipe 9, the sixth ball valve 25 is connected with the cold medium tank 14 through a second return pipe 10, a first hose 6 is arranged between the cold vertical pipe 11 and the partition plate 5, and a second hose 23 is arranged between the hot vertical pipe 24 and the partition plate 5, so that the partition plate 5 is pulled out of the slot 32 in the case that the positions of the cold vertical pipe 11 and the hot vertical pipe 24 are limited, when it is needed to heat the partition plate 5, the first ball valve 7, the second ball valve 8, the fourth ball valve 21 and the fifth ball valve 22 are opened, the third ball valve 12 and the sixth ball valve 25 are closed, and then the hot medium circulating pump 20 is operated, and then the hot medium circulating pump 20 delivers the high-temperature medium in the hot medium tank 18 to the internal space of the partition plate 5, so that the partition plate 5 is heated, when it is needed to cool the partition plate 5, the first ball valve 7, the third ball valve 12, the fifth ball valve 22 and the sixth ball valve 25 are opened, the second ball valve 8 and the fourth ball valve 21 are closed, and then the cold medium circulating pump 13 is operated, and then the cold medium circulating pump 13 delivers the low-temperature medium in the cold medium tank 14 to the internal space of the partition plate 5, so that the partition plate 5 is cooled, so that there is no large temperature difference between the upper surface and the lower surface of the partition plate 5, the stress and deformation of the partition plate 5 due to the large temperature difference are prevented, and the partition plate 5 is protected, the on-off of the first ball valve 7, the second ball valve 8, the third ball valve 12, the fourth ball valve 21, the fifth ball valve 22 and the sixth ball valve 25 is controlled, and the hot vertical pipe 24 and the cold vertical pipe 11 and other pipelines are matched, so that the hot medium flow channel and the cold medium channel can be switched, which is beneficial to reduce the use of pipelines.

[0030] Although the present specification is described in terms of embodiments, not every embodiment contains only one independent technical solution, and the description of the specification is only for the sake of clarity, and those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can be appropriately combined to form other embodiments that those skilled in the art can understand.

Claims

1. A chamber structure for semiconductor wafer processing, comprising a housing (1), characterized in that: Two upper and lower partition layers (26) are installed in the shell (1). The internal space of the shell (1) forms an upper chamber, a middle chamber and a lower chamber under the action of the two partition layers (26). A first heating element is installed in the upper chamber to provide a heat source for high-temperature reaction of the semiconductor wafer, a second heating element is installed in the middle chamber to provide a heat source for preheating the semiconductor wafer, and a cooling element is installed in the lower chamber to provide a cold source for cooling the semiconductor wafer. One side of the shell (1) is open. The open side of the shell (1) The insulating door (2) is hingedly connected to the surface, the end of the partition layer (26) away from the insulating door (2) passes through the shell (1), the side of the partition layer (26) away from the insulating door (2) is provided with a slot (32), the upper surface of the partition layer (26) is provided with a through opening (33) for moving a carrier for supporting semiconductor wafers, a partition (5) is inserted in the slot (32), the partition (5) is a hollow structure, and the end of the partition (5) outside the slot (32) is installed with a hot and cold regulating member for adjusting the temperature difference of the partition (5).

2. The semiconductor wafer processing chamber structure according to claim 1, wherein: The cold and hot regulating member comprises a cold vertical pipe (11), a cold vertical pipe (11) is provided on a side of the shell (1) away from the heat insulation door (2), two first ball valves (7) are installed on the outer surface of the cold vertical pipe (11), a first hose (6) is installed on one end of the first ball valve (7) away from the cold vertical pipe (11), and the end of the first hose (6) away from the first ball valve (7) is connected to the partition (5), and a third ball valve (12) and a second ball valve (8) are installed on the upper and lower ends of the cold vertical pipe (11), respectively. The third ball valve (12) is connected to the liquid outlet end of the cold medium circulation pump (13) through a pipeline, and the liquid inlet end of the cold medium circulation pump (13) is connected to the cold medium box (14) through a cold medium pipe (16). A hot vertical pipe (24) is provided on one side of the cold vertical pipe (11), and the hot vertical pipe (24) is connected to the liquid outlet end of the cold medium circulation pump (13). Two fifth ball valves (22) are installed on the outer surface of the pipe (24), and a second hose (23) is installed at one end of the fifth ball valve (22) away from the heat riser (24). The end of the second hose (23) away from the fifth ball valve (22) is connected to the partition (5). A fourth ball valve (21) and a sixth ball valve (25) are installed at the upper and lower ends of the heat riser (24), respectively. The fourth ball valve (21) is connected to the liquid outlet of the heat medium circulation pump (20) through a pipeline, and the liquid inlet of the heat medium circulation pump (20) is connected to the heat medium box (18) through the heat medium pipe (19). The second ball valve (8) is connected to the heat medium box (18) through the first return pipe (9), and the sixth ball valve (25) is connected to the cold medium box (14) through the second return pipe (10).

3. The semiconductor wafer processing chamber structure according to claim 2, wherein: The upper end of the cold medium box (14) is open, and a detachable first box cover (15) is installed on the upper end of the cold medium box (14). The upper end of the hot medium box (18) is open, and a detachable second box cover (17) is installed on the upper end of the hot medium box (18). A third heating element for providing a heat source for the medium in the hot medium box (18) is installed on the lower surface of the second box cover (17).

4. The semiconductor wafer processing chamber structure according to claim 2, wherein: A handle (27) is installed at the middle of one side of the partition (5) facing away from the insulation door (2), and the handle (27) is a U-shaped structure.

5. The semiconductor wafer processing chamber structure according to claim 2, wherein: Two first pipe joints are installed on the outer surface of the cold vertical pipe (11) and the outer surface of the hot vertical pipe (24). The first pipe joint on the cold vertical pipe (11) is connected to and communicated with the first ball valve (7), and the first pipe joint on the hot vertical pipe (24) is connected to and communicated with the fifth ball valve (22). Two second pipe joints are installed on the side of the partition (5) facing away from the heat insulation door (2). The second pipe joints are communicated with the internal space of the partition (5). The two second pipe joints on one of the partitions (5) are connected to and communicated with the first hose (6) and the second hose (23) respectively.

6. The semiconductor wafer processing chamber structure according to claim 1, wherein: A first heat insulation layer (29) is installed on the inner wall of the upper chamber, the inner wall of the middle chamber, and the inner wall of the lower chamber, and a second heat insulation layer (28) is installed on the side of the heat insulation door (2) facing the shell (1).

7. The semiconductor wafer processing chamber structure according to claim 6, wherein: The bottom of the shell (1) is provided with a lower opening (31) for installing a driving member for driving the semiconductor wafer carrier to move, and the bottom of the first heat insulation layer (29) in the lower chamber is provided with an upper opening, the lower opening (31) and the upper opening are arranged concentrically, and the lower opening (31) and the upper opening have the same inner diameter.

8. The semiconductor wafer processing chamber structure according to claim 1, wherein: A first connecting ear (3) is fixedly connected to the middle of one side of the heat-insulating door (2), a second connecting ear (4) matching the first connecting ear (3) is installed on one side of the shell (1), and a through hole for inserting a lock is provided on one side of the first connecting ear (3) and one side of the second connecting ear (4).

9. The semiconductor wafer processing chamber structure according to claim 1, wherein: Two strip-shaped openings (30) arranged vertically are provided on a side of the shell (1) facing away from the heat-insulating door (2), and one end of the partition layer (26) is installed in the strip-shaped opening (30).

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