Biasing circuit applied to power amplifier, integrated passive device and power amplifier

Abstract

The invention discloses a biasing circuit applied to a power amplifier, an integrated passive device and the power amplifier. The power amplifier comprises a power amplification module, and is characterized in that the bias circuit comprises a matching module, the output end of the matching module is used for being electrically connected with the input end of the power amplification module in the power amplifier, and the matching module comprises a first resistor and a first inductor which are connected in series, the first end of the first resistor is electrically connected with the first end of the first inductor, and the second end of the first inductor serves as the output end of the matching module; the bias circuit further comprises a voltage bias module, the voltage bias module is electrically connected with the second end of the first resistor, and the voltage bias module is used for outputting bias voltage corresponding to the input end of the power amplification module. According to the invention, the biasing circuit has a good low-frequency bandwidth characteristic under the condition that the area is not changed.

Description

Technical Field

[0001] The present invention relates to the technical field of power amplifier circuits, and particularly to a bias circuit, an integrated passive device, and a power amplifier applied to a power amplifier. Background Art

[0002] Power amplifiers have important applications in the field of modern electronic technology, and accordingly, the research on power amplifiers is becoming more and more extensive.

[0003] A bias circuit needs to be provided in a power amplifier to provide functions such as voltage bias and input impedance matching for the power amplifier module in the power amplifier. However, the existing bias circuit has poor low-frequency bandwidth characteristics under a certain area. And if it is necessary to improve the bandwidth characteristics at low frequencies, a large area needs to be occupied. Summary of the Invention

[0004] The present invention provides a bias circuit, an integrated passive device, and a power amplifier applied to a power amplifier, so that the bias circuit has good low-frequency bandwidth characteristics without changing the area.

[0005] According to one aspect of the present invention, there is provided a bias circuit applied to a power amplifier. The power amplifier includes a power amplification module. The bias circuit includes a matching module. The output end of the matching module is used to be electrically connected to the input end of the power amplification module in the power amplifier. The matching module includes a first resistor and a first inductor connected in series. Wherein, the first end of the first resistor is electrically connected to the first end of the first inductor, and the second end of the first inductor serves as the output end of the matching module;

[0006] The bias circuit further includes a voltage bias module. The voltage bias module is electrically connected to the second end of the first resistor, and the voltage bias module is used to output a bias voltage corresponding to the input end of the power amplification module.

[0007] Optionally, the matching module further includes: a second inductor and a first capacitor; the first end of the second inductor is electrically connected to the second end of the first inductor, and the first end of the second inductor and the first end of the first capacitor are electrically connected to serve as the input end of the matching module; the second end of the first capacitor is electrically connected to the first end of the first inductor.

[0008] Optionally, the voltage bias module includes a voltage source. The first end of the voltage source is electrically connected to the second end of the first resistor, and the second end of the voltage source is grounded.

[0009] Optionally, the voltage bias module further includes at least one decoupling capacitor, and the decoupling capacitor is connected in parallel with the voltage source.

[0010] According to another aspect of the present invention, an integrated passive device is provided, and the integrated passive device includes a bias circuit of the power amplifier as described above.

[0011] According to another aspect of the present invention, a power amplifier is provided, and the power amplifier includes a power amplification module and a bias circuit of the power amplifier as described above; an output end of the matching module is electrically connected to an input end of the power amplification module.

[0012] Optionally, the matching module further includes: a second inductor and a first capacitor; a first end of the second inductor is electrically connected to a second end of the first inductor, and a first end of the second inductor and a first end of the first capacitor are electrically connected after being connected as an input end of the matching module; a second end of the first capacitor is electrically connected to a first end of the first inductor.

[0013] Optionally, the power amplifier further includes a DC blocking circuit; an input end of the bias circuit is electrically connected to an input end of the power amplifier through the DC blocking circuit.

[0014] Optionally, the bias circuit is integrated in an integrated passive device, the DC blocking circuit is independent of the integrated passive device, and the DC blocking circuit is disposed outside a package of the power amplification module.

[0015] Optionally, the power amplification module includes a power transistor, and a control end of the power transistor serves as a control end of the power amplification module.

[0016] The technical solution of the embodiment of the present invention adopts a bias circuit including a matching module and a voltage bias module; an output end of the matching module is used to be electrically connected to an input end of a power amplification module in a power amplifier, and the matching module includes a first resistor and a first inductor connected in series, wherein a first end of the first resistor is electrically connected to a first end of the first inductor, and a second end of the first inductor serves as an output end of the matching module; the voltage bias module is electrically connected to a second end of the first resistor, and the voltage bias module is used to output a bias voltage corresponding to an input end of the power amplification module. The first inductor and the first resistor are reused, that is, they are both applied in the matching module and can also provide a choke inductor and a resistor for the voltage bias module, so that the voltage bias module does not need to be provided with an inductor and a resistor, that is, the bias circuit can reduce an inductor and a resistor. Therefore, the area of the first inductor can be increased on the premise of unchanged area, so as to have a larger low-frequency bandwidth; or the volume of the entire bias circuit can be reduced on the premise of unchanged inductor area, reducing the cost of chip manufacturing; or the volume of the entire bias circuit can be reduced and the area of the first inductor can be increased, that is, the bias circuit has a larger low-frequency bandwidth.

[0017] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0019] Figure 1 Schematic diagram of the circuit structure of a bias circuit provided by an embodiment of the present invention;

[0020] Figure 2 Schematic diagram of the circuit structure of a power amplifier provided by an embodiment of the present invention;

[0021] Figure 3 Schematic diagram of the circuit structure of another bias circuit provided by an embodiment of the present invention;

[0022] Figure 4 Schematic diagram of the structure of an integrated passive device provided by an embodiment of the present invention;

[0023] Figure 5 Schematic diagram of the circuit structure of another power amplifier provided by an embodiment of the present invention;

[0024] Figure 6 Gain simulation diagram of a traditional power amplifier from DC to 1 GHz;

[0025] Figure 7 Gain simulation diagram of a traditional power amplifier from DC to 100 MHz;

[0026] Figure 8 Gain simulation diagram of the power amplifier provided by an embodiment of the present invention from DC to 1 GHz;

[0027] Figure 9 Gain simulation diagram of the power amplifier provided by an embodiment of the present invention from DC to 100 MHz. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0028] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0029] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described here can be implemented in an order different from those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0030] As mentioned in the background art, there is a problem of poor low-frequency bandwidth characteristics in the bias circuit in the related art. After careful research, the inventor found that the reason for this technical problem is that the bias circuit in the power amplifier usually includes a gate bias circuit and an input impedance matching circuit. The gate bias circuit and the input impedance matching circuit are respectively independently electrically connected to the input end of the power amplification module. In low-frequency applications, a choke inductor and a resistor need to be provided in the gate bias circuit, and the area occupied by the choke inductor and the resistor is relatively large. Moreover, as the frequency decreases, its choking effect will be greatly reduced. Therefore, if a good choking effect is required, the area of the inductor needs to be increased. In addition, in the related art, in the architecture using T-type bridge matching, the bias circuit also needs to integrate a blocking capacitor. At low frequencies, the direct-through effect of the blocking capacitor on low-frequency alternating current is reduced, so the area of the blocking capacitor also needs to be increased. Considering the above two factors, when the area of the bias circuit is fixed, its low-frequency bandwidth characteristics are poor, that is, it is difficult to be applied to lower frequencies.

[0031] Based on the above technical problems, the present invention proposes the following solutions:

[0032] Figure 1 It is a schematic circuit diagram of a bias circuit provided by an embodiment of the present invention. Figure 2 It is a schematic circuit diagram of a power amplifier provided by an embodiment of the present invention. Refer to Figure 1 and Figure 2。The bias circuit of this embodiment is applied to a power amplifier. The power amplifier includes a power amplification module 2. The bias circuit 1 includes a matching module 11 and a voltage bias module 12. The output end of the matching module 11 is used to be electrically connected to the input end of the power amplification module 2 in the power amplifier. The matching module 11 includes a first resistor R1 and a first inductor L1 connected in series. Among them, the first end of the first resistor R1 is electrically connected to the first end of the first inductor L1, and the second end of the first inductor L1 serves as the output end OUT1 of the matching module 11. The voltage bias module 12 is electrically connected to the second end of the first resistor R1, and the voltage bias module 12 is used to output the bias voltage corresponding to the input end of the power amplification module 2.

[0033] Specifically, the power amplifier can amplify the power signal input at its input end IN2 and output it from its output end OUT2. The power amplification module 2 is mainly used for power amplification in the power amplifier. The bias circuit 1 is used for impedance matching of the power amplification module 2 and providing a bias voltage, so that the power amplification module 2 can work normally and efficiently. The matching module 11 in the bias circuit 1 serves as the input impedance matching network of the power amplifier, and it includes a first inductor L1 and a first resistor R1 connected in series inside. In the traditional design, the second end of the first resistor R1 is grounded, and the voltage bias module 12 also includes a structure in which an inductor and a resistor are connected in series. This structure is connected to the input end of the power amplification module to provide a bias voltage for it.

[0034] In this embodiment, the series-connected first inductor L1 and first resistor R1 are not only used in the impedance matching network, but also used in the voltage bias network to provide a choke inductor and a resistor for the voltage bias module 12. In other words, the first inductor L1 not only participates in impedance matching, but also participates in the choke effect of voltage bias; the first resistor R1 not only participates in impedance matching, but also provides functions such as current limiting for voltage bias. Through the reuse of the first inductor L1 and the first resistor R1, the bias circuit 1 can reduce one inductor and one resistor, thereby reducing the area of the bias circuit and saving the chip manufacturing cost; or, when the area of the bias circuit is fixed, the inductor can be made larger, thereby broadening the low-frequency bandwidth; or it can also be to reduce the area of the bias circuit and simultaneously broaden the low-frequency bandwidth.

[0035] The technical solution of this embodiment adopts a bias circuit including a matching module and a voltage bias module; the output end of the matching module is used to be electrically connected to the input end of the power amplification module in the power amplifier. The matching module includes a first resistor and a first inductor connected in series. Among them, the first end of the first resistor is electrically connected to the first end of the first inductor, and the second end of the first inductor serves as the output end of the matching module; the voltage bias module is electrically connected to the second end of the first resistor, and the voltage bias module is used to output the bias voltage corresponding to the input end of the power amplification module. The first inductor and the first resistor are reused, that is, they are both applied in the matching module and can also provide a choke inductor and a resistor for the voltage bias module, so that the voltage bias module does not need to be provided with an inductor and a resistor, that is, the bias circuit can reduce an inductor and a resistor. Therefore, on the premise of unchanged area, the area of the first inductor can be increased to have a larger low-frequency bandwidth; or on the premise of unchanged inductor area, the volume of the entire bias circuit can be reduced to reduce the chip cost; or the volume of the entire bias circuit can be reduced and the area of the first inductor can be increased, that is, the bias circuit has a larger low-frequency bandwidth.

[0036] Optionally, Figure 3 is a schematic circuit diagram of another bias circuit provided by an embodiment of the present invention. Refer to Figure 3 . The matching module 11 further includes: a second inductor L2 and a first capacitor C1; the first end of the second inductor L2 is electrically connected to the second end of the first inductor L1, and the first end of the second inductor L2 and the first end of the first capacitor C1 are electrically connected to serve as the input end IN1 of the matching module 11; the second end of the first capacitor C1 is electrically connected to the first end of the first inductor L1.

[0037] Specifically, in this embodiment, the first inductor L1, the second inductor L2, the first capacitor C1, and the first resistor R1 form a matching network of a T-type bridge topology. The matching network of the T-type bridge topology can provide a bandwidth greater than an octave with a flat gain. For example, the matching network can be set to match a 50Ω characteristic impedance. The matching network of the T-type bridge topology has the characteristic of a very low Q value. The parameters of each component in the matching module 11, that is, the matching network of the T-type bridge topology, can be designed according to the required characteristic impedance to be matched. The specific calculation method is well known to those skilled in the art and will not be elaborated here.

[0038] Of course, it should be noted that the matching module 11 can also be other types of matching networks. As long as it includes a series resistor and inductor inside and one end of the resistor is grounded, the method of this embodiment can be applied to reuse the series resistor and inductor to the bias voltage generation module, so as to achieve the effect of reducing the area and / or improving the low-frequency bandwidth characteristic.

[0039] Optionally, refer to Figure 3, the voltage bias module 12 includes a voltage source V1. The first end of the voltage source V1 is electrically connected to the second end of the first resistor R1, and the second end of the voltage source V1 is grounded.

[0040] Specifically, in this embodiment, the voltage source V1 can provide a bias voltage. This bias voltage is conducted to the input end of the power amplification module 2 after passing through the first resistor R1 and the first inductor L1, so that the power amplification module 2 can work properly. In this embodiment, the voltage bias module 12 does not include an inductor and a resistor, but reuses the first inductor L1 and the first resistor R1 in the matching module 11, which can reduce the number of components in the entire bias circuit 1.

[0041] Optionally, continue to refer to Figure 3 , the voltage bias module 11 further includes at least one decoupling capacitor, and the decoupling capacitor is connected in parallel with the voltage source V1. Exemplarily, in this embodiment, the voltage bias module 11 includes three decoupling capacitors, namely the first decoupling capacitor C2, the second decoupling capacitor C3, and the third decoupling capacitor C4. The decoupling capacitor can filter the bias voltage output by the voltage source V1 and perform AC grounding, so that the bias voltage is more stable and ensure the stable operation of the power amplification module 2.

[0042] The embodiment of the present invention also provides an integrated passive device, as Figure 4 shown, Figure 4 is a schematic structural diagram of an integrated passive device provided by the embodiment of the present invention. The integrated passive device (Integrated Passive Devices, IPD) includes the bias circuit provided by any embodiment of the present invention. Specifically, the integrated passive device includes a substrate 81 and a device layer 82, and components such as resistors, capacitors, and inductors in the bias circuit are arranged on the device layer 82. Of course, it should be noted that the device layer 82 may include multiple metal layers, and an insulating layer may also be included between the device layer 82 and the substrate 81. The substrate 81 is, for example, a silicon substrate, a sapphire substrate, a GaAs substrate, an InP substrate, a GaN substrate, a SiC substrate, or a Ga2O3 substrate, etc. Since the integrated passive device provided by the embodiment of the present invention includes the bias circuit provided by any embodiment of the present invention, it can have a smaller area and / or have better low-frequency bandwidth characteristics.

[0043] The embodiment of the present invention also provides a power amplifier. As Figure 2 shown, the power amplifier includes a power amplification module 2 and the bias circuit 1 provided by any embodiment of the present invention; the output end of the matching module 11 in the bias circuit 1 is electrically connected to the input end of the power amplification module 2. The power amplifier can amplify the power signal input at its input end IN2 and output it from its output end OUT2. Because it includes the bias circuit applied to the power amplifier provided by any embodiment of the present invention, it also has the same beneficial effects and will not be elaborated here.

[0044] Optionally, Figure 5 is a schematic diagram of the circuit structure of another power amplifier provided by an embodiment of the present invention. Refer to Figure 5 . The power amplification module 2 includes a power transistor M1, and the control end of the power transistor M1 serves as the control end of the power amplification module 2. Exemplarily, the power transistor M1 can be a GaN transistor, which has good radio frequency characteristics.

[0045] Optionally, the matching module 11 further includes a second inductor L2 and a first capacitor C1; the first end of the second inductor L2 is electrically connected to the second end of the first inductor L1, and the first end of the second inductor L2 and the first end of the first capacitor C1 are electrically connected and then used as the input end IN1 of the matching module 11; the second end of the first capacitor C1 is electrically connected to the first end of the first inductor L1.

[0046] Specifically, in this embodiment, the first inductor L1, the second inductor L2, the first capacitor C1, and the first resistor R1 form a matching network of a T-shaped bridge topology. The matching network of the T-shaped bridge topology can provide a bandwidth greater than an octave with a flat gain. For example, the matching network can be set to match a 50Ω characteristic impedance. The matching network of the T-shaped bridge topology has the characteristic of a very low Q value.

[0047] Optionally, refer to Figure 5 , the voltage bias module 12 includes a voltage source V1. The first end of the voltage source V1 is electrically connected to the second end of the first resistor R1, and the second end of the voltage source V1 is grounded. The voltage bias module 11 further includes at least one decoupling capacitor, and the decoupling capacitor is connected in parallel with the voltage source V1. For the specific working principle of the voltage bias module 12, reference can be made to the description of the bias circuit part of the present invention, which will not be elaborated here.

[0048] Optionally, continue to refer to Figure 5 , the power amplifier further includes a DC blocking circuit 3; the input end of the bias circuit 1 is electrically connected to the input end IN2 of the power amplifier through the DC blocking circuit 3. Among them, the first end of the DC blocking circuit 3 is electrically connected to the input end IN2 of the power amplifier, and the output end of the DC blocking circuit 3 is electrically connected to the input end of the bias circuit 1.

[0049] Specifically, the DC blocking circuit 3 can prevent the bias voltage output by the voltage bias module 12 from affecting the external circuit. The input end IN2 of the power amplifier generally needs to input an AC signal. If the DC blocking circuit 3 is not provided, the DC bias voltage will affect the circuit that generates the above AC signal, thereby affecting its operation. By setting the DC blocking circuit 3, the influence of the voltage bias module 12 on the external circuit can be greatly reduced.

[0050] Exemplarily, the DC blocking circuit 3 may include a DC blocking capacitor Cg. The first end of the DC blocking capacitor Cg serves as the first end of the DC blocking circuit 3, and the second end of the DC blocking capacitor Cg serves as the second end of the DC blocking circuit 3. A capacitor has the function of passing alternating current and blocking direct current. Using the DC blocking capacitor Cg as the DC blocking circuit, the structure of the DC blocking circuit is relatively simple and the cost is relatively low.

[0051] Optionally, the bias circuit 1 is integrated in an integrated passive device. The DC blocking circuit 3 is independent of the integrated passive device, and the DC blocking circuit 3 is disposed outside the package of the power amplification module.

[0052] Specifically, the bias circuit 1 and the power amplification module 2 may be packaged in the same chip. In the design of the traditional bias circuit 1, since the voltage bias module and the matching module are each independently electrically connected to the power amplification module, and the resistor in the voltage bias module is grounded, in order to block direct current and prevent the bias voltage from passing through the voltage bias module to ground, the DC blocking circuit needs to be disposed between the output end of the bias circuit and the input end of the power amplification module. Also, because the bias circuit 1 and the power amplification module 2 usually need to be packaged in one chip, the DC blocking circuit 3 has to be packaged in this circuit. In the related art, this DC blocking circuit is integrated with the bias circuit in an integrated passive device. At low frequencies, the size of the DC blocking circuit 3 needs to be set larger to better block direct current and pass alternating current. Therefore, the sizes of the integrated passive device and the chip are also larger in the traditional design. In this embodiment, since the DC blocking circuit 3 is disposed between the input end of the bias circuit 1 and the input end of the power amplifier, the DC blocking circuit 3 can be independent of the bias circuit 1 and the power amplification module 2. Thus, on the one hand, the size of the integrated passive device and the chip can be reduced, and on the other hand, a DC blocking capacitor with a larger size can be selected for the DC blocking circuit 3, so as to achieve a better DC blocking effect at low frequencies.

[0053] Optionally, as Figure 5 shown, the power amplifier further includes: a third inductor L3, a fifth capacitor C5, a sixth capacitor C6, and a seventh capacitor C7. The first end of the power transistor M1 is grounded; the second end of the power transistor M1 is electrically connected to the first end of the voltage source V1. The first end of the fifth capacitor C5 is electrically connected to the first end of the voltage source V1, and the second end of the fifth capacitor C5 is grounded. The first end of the third inductor L3 is electrically connected to the second end of the power transistor M1, the second end of the third inductor L3 is electrically connected to the first end of the sixth capacitor C6, and the second end of the sixth capacitor C6 is electrically connected to the output end OUT2 of the power amplifier; the first end of the seventh capacitor C7 is electrically connected to the second end of the third inductor L3, and the second end of the seventh capacitor C7 is grounded. The above circuit is used to provide a source bias voltage, a drain ground, and output impedance matching for the power transistor M1, and its specific working principle is well known to those skilled in the art and will not be elaborated here.

[0054] Exemplarily,Figure 6 It is the gain simulation diagram of a traditional power amplifier from DC to 1 GHz. Figure 7 It is the gain simulation diagram of a traditional power amplifier from DC to 100 MHz. Figure 8 It is the gain simulation diagram of the power amplifier provided by the embodiment of the present invention from DC to 1 GHz. Figure 9 It is the gain simulation diagram of the power amplifier provided by the embodiment of the present invention from DC to 100 MHz. It can be seen that Figures 6 to 9 the power amplifier of the present invention greatly improves the bandwidth range of the low-frequency band and can save the area of integrated passive devices, thereby saving the chip manufacturing cost.

[0055] It should be understood that the various forms of the processes shown above can be used, steps can be reordered, added or deleted. For example, the steps described in the present invention can be executed in parallel, sequentially or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is made herein.

[0056] The above specific embodiments do not constitute a limitation to the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A bias circuit applied to a power amplifier, the power amplifier comprising a power amplification module, characterized in that, The bias circuit includes a matching module, and the output end of the matching module is used for electrically connecting to the input end of the power amplification module in the power amplifier. The matching module includes a first resistor and a first inductor connected in series. Wherein, the first end of the first resistor is electrically connected to the first end of the first inductor, and the second end of the first inductor serves as the output end of the matching module; The bias circuit further includes a voltage bias module, the voltage bias module is electrically connected to the second end of the first resistor, and the voltage bias module is used to output a bias voltage corresponding to the input end of the power amplification module.

2. The bias circuit of the power amplifier according to claim 1, wherein The matching module further includes: a second inductor and a first capacitor; the first end of the second inductor is electrically connected to the second end of the first inductor, and the first end of the second inductor and the first end of the first capacitor are electrically connected and then serve as the input end of the matching module; the second end of the first capacitor is electrically connected to the first end of the first inductor.

3. The bias circuit of the power amplifier according to claim 1, characterized in that, The voltage bias module includes a voltage source, the first end of the voltage source is electrically connected to the second end of the first resistor, and the second end of the voltage source is grounded.

4. The bias circuit of the power amplifier according to claim 3, wherein, The voltage bias module further includes at least one decoupling capacitor, and the decoupling capacitor is connected in parallel with the voltage source.

5. An integrated passive device, characterized in that, The integrated passive device includes the bias circuit of the power amplifier according to any one of claims 1-4.

6. A power amplifier, characterized in that, The power amplifier includes a power amplification module and the bias circuit of the power amplifier according to any one of claims 1-4; the output end of the matching module is electrically connected to the input end of the power amplification module.

7. The power amplifier according to claim 6, characterized in that, The matching module further includes: a second inductor and a first capacitor; the first end of the second inductor is electrically connected to the second end of the first inductor, and the first end of the second inductor and the first end of the first capacitor are electrically connected and then serve as the input end of the matching module; the second end of the first capacitor is electrically connected to the first end of the first inductor.

8. The power amplifier according to claim 7, characterized in that, The power amplifier further includes a DC blocking circuit; the input end of the bias circuit is electrically connected to the input end of the power amplifier through the DC blocking circuit.

9. The power amplifier according to claim 8, wherein, The bias circuit is integrated in the integrated passive device, the DC blocking circuit is independent of the integrated passive device, and the DC blocking circuit is arranged outside the package of the power amplification module.

10. The power amplifier according to claim 7, characterized in that, The power amplification module includes a power transistor, and the control end of the power transistor serves as the control end of the power amplification module.

Images