Transfer device for transferring substrates and related

Abstract

The present disclosure relates to a transport apparatus for transporting a substrate related to a substrate processing operation for semiconductor manufacturing, and related components and methods. In one embodiment, a transfer apparatus for moving a substrate related to semiconductor manufacturing includes: a main body; and a plurality of substrate supports at least partially inserted into the body. Each of the plurality of substrate supports includes: an inner segment; and one or more fins extending outwardly relative to the inner section. Each of the inner segment and the one or more fins includes silicon carbide (SiC).

Description

Technical Field

[0001] The present disclosure relates to a transfer device for transferring substrates related to substrate processing operations in semiconductor manufacturing, as well as related components and methods. Background Art

[0002] The processing of semiconductor substrates has a wide range of applications, including the manufacture of integrated devices and micro-devices. A temperature difference between the substrate and the transfer component may impede operation. For example, the temperature difference may cause a reduction in heating power and / or a reduction in processing temperature, which may lead to an extended processing time and a reduced yield. As another example, the temperature difference may cause thermal shock (which may bend the substrate), thereby impeding device performance and reducing the yield. As another example, the temperature difference may affect the deposition uniformity on the substrate, thereby impeding device performance and reducing the yield.

[0003] Relatively more complex deposition operations, such as high-temperature deposition operations, may exacerbate these problems.

[0004] Therefore, there is a need to improve transfer devices and related components and methods to facilitate reducing thermal shock and increasing the yield. Summary of the Invention

[0005] The present disclosure relates to a transfer device for transferring substrates related to substrate processing operations in semiconductor manufacturing, as well as related components and methods.

[0006] In one embodiment, a transfer device for moving a substrate related to semiconductor manufacturing includes: a body; and a plurality of substrate supports at least partially inserted into the body. Each of the plurality of substrate supports includes: an inner segment; and one or more fins extending outward relative to the inner segment. Each of the inner segment and the one or more fins includes silicon carbide (SiC).

[0007] In one embodiment, a transfer device for moving a substrate related to semiconductor manufacturing includes a body. The body includes: a wrist; and a plurality of arms defining a support surface. Each of the plurality of arms has an arm thickness, and each of the plurality of arms is formed of an arm material. The transfer device includes: a plurality of substrate supports at least partially inserted into the support surface of the body. Each of the plurality of substrate supports is formed of a support material different from the arm material. Each of the plurality of substrate supports includes: an inner segment; and one or more fins extending outward relative to the inner segment. The fin thickness of each of the one or more fins is a thickness ratio of the arm thickness, and the thickness ratio is 0.7 or less.

[0008] In one embodiment, a method of processing a substrate for semiconductor manufacturing includes heating a substrate positioned within a processing volume of a processing chamber. The method includes flowing one or more process gases over the substrate to form one or more layers on the substrate; and moving a transfer device into the processing volume. The transfer device includes a body; and a plurality of substrate supports at least partially inserted into the body. Each of the plurality of substrate supports includes silicon carbide (SiC). The method includes engaging the substrate with the plurality of substrate supports; and moving the substrate out of the processing volume while the substrate is supported on the plurality of substrate supports. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] To enable a more detailed understanding of the above features of the present disclosure, a more detailed description of the present disclosure briefly summarized above may be obtained by reference to the embodiments, some of which are illustrated in the drawings. It should be noted, however, that the drawings illustrate only exemplary embodiments and are not to be construed as limiting the scope of such embodiments, and other equally effective embodiments are acceptable.

[0010] Figure 1 is a schematic side cross-sectional view of a processing chamber according to one embodiment.

[0011] Figure 2 is a schematic top view of a transfer device for moving a substrate related to semiconductor manufacturing according to one embodiment.

[0012] Figure 3 is according to one embodiment, a schematic side cross-sectional view of the transfer device along Figure 2 section 3-3 shown.

[0013] Figure 4 is a schematic side cross-sectional view of a transfer device according to one embodiment.

[0014] Figure 5 is according to one embodiment, Figure 4 a schematic partial top view of the transfer device shown.

[0015] Figure 6 is according to one embodiment, Figure 4 a schematic partial top view of the transfer device shown.

[0016] Figure 7 is a schematic side cross-sectional view of a transfer device according to one embodiment.

[0017] Figure 8 is according to one embodiment, Figure 7 a schematic partial top view of the transfer device shown.

[0018] Figure 9 According to one embodiment, Figure 7 A schematic partial top view of the shown transfer device.

[0019] Figure 10 According to one embodiment, Figure 7 A schematic partial top view of the shown transfer device.

[0020] Figure 11 According to one embodiment, Figure 7 A schematic partial top view of the shown transfer device.

[0021] Figure 12 According to one embodiment, Figure 7-11 A schematic side cross-sectional view of the shown transfer device.

[0022] Figure 13 According to one embodiment, a schematic side cross-sectional view of the transfer device.

[0023] Figure 14 According to one embodiment, Figure 13 A schematic partial top view of the shown transfer device.

[0024] Figure 15 According to one embodiment, Figure 13 A schematic partial top view of the shown transfer device.

[0025] Figure 16 According to one embodiment, Figure 13 A schematic partial top view of the shown transfer device.

[0026] Figure 17 According to one embodiment, Figure 13 A schematic partial top view of the shown transfer device.

[0027] Figure 18 According to one embodiment, a schematic side cross-sectional view of the transfer device.

[0028] Figure 19 According to one embodiment, a schematic side cross-sectional view of the transfer device.

[0029] Figure 20 A schematic block diagram of a method for processing a substrate for semiconductor manufacturing according to one embodiment.

[0030] Figure 21 A schematic curve view of a graph according to one embodiment, the graph showing the relationship between the substrate temperature (in degrees Celsius) and time (in seconds) for a plurality of cooling curves of a substrate.

[0031] For ease of understanding, wherever possible, the same reference numerals have been used to designate identical elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. Detailed Description

[0032] The present disclosure relates to a transfer apparatus for transferring substrates related to substrate processing operations in semiconductor manufacturing, as well as related components and methods.

[0033] Figure 1 FIG. 9 is a schematic side cross-sectional view of a processing chamber 100 according to one embodiment. The processing chamber 100 is a deposition chamber. In one embodiment that can be combined with other embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 creates a cross-flow of precursors across the entire top surface 150 of the substrate 102.

[0034] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed within the chamber body are a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. As shown, a controller 120 communicates with the processing chamber 100 and is used to control processes and methods, such as the operation of the methods described herein. The controller 120 and the processing chamber 100 may be part of a substrate processing system.

[0035] In Figure 1 the illustrated embodiment, the heat sources 141, 143 are lamps. Other heat sources are also contemplated, such as resistive heaters, light-emitting diodes (LEDs), and / or lasers.

[0036] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 includes a support surface 123 for supporting the substrate 102. The plurality of upper heat sources 141 are disposed between the upper window 108 and the lid 154. The plurality of upper heat sources 141 form part of the upper heating module 155. The lid 154 may include a plurality of sensors (such as pyrometers) disposed therein or thereon for measuring the temperature within the processing chamber 100. The plurality of lower heat sources 143 are disposed between the lower window 110 and the chamber bottom plate 152. The plurality of lower heat sources 143 form part of the lower heating module 145. The upper window 108 is an upper dome and is at least partially formed of an energy transmissive material, such as quartz. The lower window 110 is a lower dome and is at least partially formed of an energy transmissive material, such as quartz.

[0037] The process volume 136 and the purge volume 138 are positioned between the upper window 108 and the lower window 110. The process volume 136 and the purge volume 138 are part of an internal volume that is at least partially defined by the upper window 108, the lower window 110, and the one or more gaskets 163. The upper window 108 at least partially defines the process volume 136.

[0038] The window 108 includes a first face 111 that is concave or flat (in the Figure 1 illustrated embodiment, the first face 111 is flat). The upper window 108 includes a second face 113 that is convex. The second face 113 faces the substrate support 106. Other shapes of the upper window 108 are contemplated by the present disclosure. The upper window 108 includes an inner section 122 and an outer section 124. The first face 111 and the second face 113 are at least part of the inner section 122. The inner section 122 is transparent and the outer section 124 is opaque. The outer section 124 is at least partially received within one or more sidewalls of the processing chamber 100 (such as in the flow module 112).

[0039] The substrate support 106 is disposed within the internal volume. The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is attached to the shaft 118. The shaft 118 is connected to the motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment for the shaft 118 and / or the substrate support 106 within the processing volume 136.

[0040] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 may be sized to accommodate lift pins 132 for lifting the substrate 102 from the substrate support 106 before or after a deposition process is performed. When the substrate support 106 is lowered from the process position to the transfer position, the lift pins 132 may rest on lift pin stoppers 134. The lift pin stoppers 134 may be coupled to the second shaft 104.

[0041] The flow module 112 includes a plurality of gas inlets 114, a plurality of purge gas inlets 164, and one or more exhaust outlets 116. The plurality of gas inlets 114 and the plurality of purge gas inlets 164 are disposed on a side of the flow module 112 opposite the one or more exhaust outlets 116. One or more deflectors 117 are disposed below the plurality of gas inlets 114 and the one or more exhaust outlets 116. For example, the one or more deflectors may include one or more preheating rings. The one or more deflectors 117 are disposed above the purge gas inlets 164. One or more gaskets 163 are disposed on an inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition operations and / or cleaning operations. The gas inlets 114 and the purge gas inlets 164 are each positioned to cause the gas to flow parallel to a top surface 150 of the substrate 102 disposed within the process volume 136. The gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlets 164 are fluidly connected to one or more purge gas sources 162 and / or the one or more cleaning gas sources 153. The one or more exhaust outlets 116 are fluidly connected to an exhaust pump 157. One or more process gases supplied using the one or more process gas sources 151 may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purge gases supplied using the one or more purge gas sources 162 may include one or more inert gases (e.g., one or more of argon (Ar), helium (He), hydrogen (H2), and / or nitrogen (N2)). One or more cleaning gases supplied using the one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one embodiment, which may be combined with other embodiments, the one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and the one or more cleaning gases include hydrochloric acid (HCl).

[0042] The one or more exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 is fluidly connected to the one or more exhaust outlets 116 and an exhaust pump 157. The exhaust system 178 may assist in the controlled deposition of a layer on the substrate 102. The exhaust system 178 is disposed on an opposite side of the processing chamber 100 relative to the flow module 112.

[0043] The controller 120 includes a central processing unit (CPU), a memory containing instructions, and support circuitry for the CPU. The controller 120 directly controls various items, or controls through other computers and / or controllers. In one or more embodiments, the controller 120 is communicatively coupled to a dedicated controller and the controller 120 functions as a central controller.

[0044] The controller 120 is any form of a general-purpose computer processor that is used in an industrial environment to control various substrate processing chambers and equipment, as well as sub-processors thereon or therein. The memory, or non-transitory computer-readable medium, is one or more off-the-shelf memories such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (such as DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, and the like)), read-only memory (ROM), floppy disks, hard disks, flash drives, or any other form of local or remote digital storage. The support circuitry of the controller 120 is coupled to the CPU to support the CPU (processor). The support circuitry includes cache, power supply, frequency circuitry, input / output circuitry systems, and subsystems, etc. Operating parameters (pressure of process gas, flow rate of process gas, and / or rotational position of the process kit) and operations are stored in the memory as software routines that are executed or invoked to turn the controller 120 into a specific-purpose controller to control the operations of the various chambers / modules described herein. The controller 120 is configured to perform any of the operations described herein. The instructions stored in the memory, when executed, cause one or more operations of the method 2000 (described below) to be performed.

[0045] The various operations described herein (e.g., the operations of the method 2000) may be automatically performed using the controller 120, or may be performed automatically or manually in cases where some operations are performed by a user.

[0046] The controller 120 is configured to control the rotational position, heating, and gas flow through the processing chamber 100 by providing outputs to the controls for the heat sources 141, 143, gas flow, and motion assembly 121. The controls include controls for the upper heat source 141, lower heat source 143, process gas source 151, purge gas source 162, motion assembly 121, and exhaust pump 157.

[0047] The controller 120 is configured to adjust the outputs to the controls based on sensor readings, system models, and stored readings and calculations. The controller 120 includes embedded software and compensation algorithms to calibrate the measurements. The controller 120 may include one or more machine learning algorithms and / or artificial intelligence algorithms for estimating optimized parameters for deposition operations, purge operations, and / or cleaning operations. The one or more machine learning algorithms and / or artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to estimate the optimized parameters. The algorithms may be unsupervised or supervised.

[0048] A substrate (such as substrate 102) is transferred into and out of the interior volume of the processing chamber 100 through a transfer gate 137 (such as a slit valve). When the transfer gate 137 is open, a transfer device (on which the substrate is supported) can extend through the transfer gate 137 into the interior volume such that the lift pins 132 can lift the substrate from the transfer device and place the substrate on the substrate support 106 for processing. After processing, the lift pins 132 can lift the substrate from the substrate support 106 and place the substrate on the transfer device, and the transfer device can retract through the open transfer gate 137 to remove the substrate from the processing chamber 100.

[0049] Figure 2 is a schematic top view of a transfer device 200 for moving a substrate 102 related to semiconductor manufacturing, according to one embodiment.

[0050] Figure 3 is a schematic side cross-sectional view of the transfer device 200 along the Figure 2 section 3-3 shown, according to one embodiment.

[0051] The transfer device 200 includes: a body 202; and a plurality of substrate supports 210 that are at least partially inserted into the body 202. In one or more embodiments, the body 202 is a blade, such as a robotic blade, that is attached to a transfer robot in a transfer chamber. Each of the plurality of substrate supports 210 includes: an inner section 212; and one or more fins 214 that extend outwardly relative to the inner section 212. In Figure 2 the embodiment shown, the transfer device 200 includes four substrate supports 210. Other numbers of substrate supports 210 are also contemplated.

[0052] The body 202 includes: a wrist portion 203; and a plurality of arms 204 that define a support surface 205. Each of the plurality of arms 204 is formed of an arm material. The substrate support 210 is at least inserted into the support surface 205 of the body 202. The wrist portion 203 includes a wrist lug 206, each of the plurality of arms 204 includes an arm lug 207, and each of the plurality of substrate supports 210 is positioned inside the wrist lug 206 and each arm lug 207.

[0053] Each of the inner section 212 and the one or more fins 214 includes silicon carbide (SiC). In one or more embodiments, each of the inner section 212 and the one or more fins 214 is formed of SiC. In one or more examples, in the composition of each of the inner section 212 and the one or more fins 214, the atomic percentages of silicon and carbon are at least 95%. In one or more embodiments, each of the inner section 212 and the one or more fins 214 is formed of graphite coated with SiC. In one or more embodiments, each of the plurality of substrate supports 210 is formed of a support material different from the arm material. In one or more embodiments, the arm material includes quartz (SiO2). In one or more embodiments, the arm material can transmit at least 95% of the light with wavelengths in the infrared (IR) range. In one or more embodiments, the absorption rate of the support material absorbs at least 95% of the light with wavelengths in the infrared (IR) range. In one or more embodiments, the thermal conductivity of the support material is at least 100 W / m*°K. In one or more embodiments, the resistivity of the support material is 1.0 megohm or higher, such as 2.0 megohm or higher.

[0054] The substrate support 210 can be formed by machining a solid SiC block. The substrate support 210 can be formed by injection molding graphite and coating the molded graphite with SiC. Other methods of forming the substrate support 210 are also contemplated.

[0055] In Figure 3 the illustrated embodiment, the shape of the inner section 212 is semi-ball (such as semi-spherical or semi-ovoid) and cylindrical, and the shape of each of the one or more fins 214 is cylindrical or rectangular. In Figure 2 the illustrated embodiment, the shape of each of the one or more fins 214 is cylindrical.

[0056] Each of the plurality of arms 204 has an arm thickness AT1, and each of the one or more fins 214 has a fin thickness FT1, which is a thickness ratio of the arm thickness. In one or more embodiments, the thickness ratio is 0.7 or less. Each of the inner segments 212 includes a support portion 215 on a first side of the one or more fins 214. The support portion 215 extends across the support surface 205 by a gap G1. The gap G1 is a gap ratio of the arm thickness AT1. In one or more embodiments, the gap ratio is 0.3 or higher. The inner segment 212 of each substrate support 210 has a segmented major dimension SD1, and each of the one or more fins 214 has a fin major dimension FD1. The fin major dimension FD1 is greater than the segmented major dimension SD1. The fin major dimension FD1 is a dimension ratio of the arm thickness AT1. In one or more embodiments, the dimension ratio is 2.0 or higher. In one or more embodiments, the dimension ratio is 4.0 or higher. In one or more embodiments, the arm thickness AT1 is in the range of 2.5 millimeters to 3.5 millimeters (such as 3.0 millimeters), and the fin thickness FT1 is 2.0 millimeters or less (such as in the range of 1.0 millimeter to 2.0 millimeters). Other values of the arm thickness AT1 and the fin thickness FT1 are also contemplated.

[0057] Each of the inner segments 212 includes an insertion portion 216 on a second side of the one or more fins 214. The insertion portion 216 extends into a retention opening 209 formed in one of the plurality of arms 204. In Figure 2 and Figure 3 the illustrated embodiment, the shape of the insertion portion 216 is cylindrical, the support portion 215 includes a first section and a second section (the second section contacts and supports the substrate 102), the shape of the first section is cylindrical, and the shape of the second section is hemispherical (such as hemispherical or semi-ovoid). In Figure 2 and Figure 3 the illustrated embodiment, the one or more fins 214 rest on the support surface 205 of the body 202.

[0058] Figure 4 is a schematic side cross-sectional view of a transmission device 400 according to one embodiment.

[0059] Figure 5 is according to one embodiment, Figure 4 a schematic partial top view of the illustrated transmission device 400.

[0060] Figure 6 is according to one embodiment, Figure 4 a schematic partial top view of the illustrated transmission device 400.

[0061] The transfer device 400 includes a plurality of substrate supports 410 ( Figure 4 one of which is shown). Each substrate support 410 may be similar to the substrate support 210 described above and may include one or more of its features, aspects, components, operations, and / or properties.

[0062] Each substrate support 410 includes an inner section 412 and one or more fins 414. Each inner section 412 includes a support portion 415 on a first side of the one or more fins 414. Each inner section 412 includes an insertion portion 416 on a second side of the one or more fins 414. The insertion portion 416 extends into a retention opening 409 formed in a recessed surface 420 of one of the plurality of arms 204.

[0063] In Figure 4 the illustrated embodiment, the inner section 412 is spherical (such as spherical or oval-shaped), and each of the one or more fins 414 is cylindrical or rectangular in shape. The support portion 415 is hemispherical (such as hemispherical or semi-oval-shaped), and the insertion portion 416 is hemispherical (such as hemispherical or semi-oval-shaped). In Figure 4 the illustrated embodiment, the one or more fins 414 rest on the recessed surface 420.

[0064] In Figure 5 the illustrated embodiment, each of the one or more fins 414 is cylindrical in shape.

[0065] In Figure 6 the illustrated embodiment, each of the one or more fins 414 is rectangular in shape.

[0066] Figure 7 is a schematic side cross-sectional view of a transfer device 700 according to an embodiment.

[0067] Figure 8 is according to an embodiment, Figure 7 a schematic partial top view of the transfer device 700 shown.

[0068] Figure 9 is according to an embodiment, Figure 7 a schematic partial top view of the transfer device 700 shown.

[0069] Figure 10 is according to an embodiment, Figure 7 a schematic partial top view of the transfer device 700 shown.

[0070] Figure 11 is according to an embodiment, Figure 7 a schematic partial top view of the transfer device 700 shown.

[0071] The transfer device 700 includes a plurality of substrate supports 710 ( Figure 7 one of which is shown). Each substrate support 710 may be similar to the substrate support 210 described above and may include one or more of its features, aspects, components, operations, and / or properties.

[0072] Each substrate support 710 includes an inner segment 712 and one or more fins 714. Each inner segment 712 includes a support portion 715 on a first side of the one or more fins 714. Each inner segment 712 includes an insertion portion 716 on a second side of the one or more fins 714. The insertion portion 716 extends into a retention opening 709 formed in a recessed surface 420 of one of the plurality of arms 204.

[0073] In Figure 7 the illustrated embodiment, the inner segment 712 is rectangular or cylindrical in shape, and each of the one or more fins 714 is cylindrical or rectangular in shape. The support portion 715 is cylindrical or rectangular in shape, and the insertion portion 716 is cylindrical or rectangular in shape.

[0074] In Figure 8 the illustrated embodiment, the inner segment 712 is cylindrical in shape, and each of the one or more fins 714 is cylindrical in shape.

[0075] In Figure 9 the illustrated embodiment, the inner segment 712 is cylindrical in shape, and each of the one or more fins 714 is rectangular in shape. For example, each of the one or more fins 714 may be a rectangular block, such as a cube.

[0076] In Figure 10 the illustrated embodiment, the inner segment 712 is rectangular in shape, and each of the one or more fins 714 is cylindrical in shape.

[0077] In Figure 11 the illustrated embodiment, the inner segment 712 is rectangular in shape, and each of the one or more fins 714 is rectangular in shape.

[0078] Figure 12 is according to one embodiment, Figure 7-11 a schematic side cross-sectional view of the transfer device 700 shown. In Figure 12 the illustrated embodiment, the sectional main dimension SD2 of the inner segment 712 is less than the height H1 of the inner segment 712. In Figure 7 the illustrated embodiment, the sectional main dimension SD2 is greater than the height H1. In one or more embodiments, each of the main dimensions SD1, SD2, FD1 is a diameter or a width.

[0079] Figure 13 According to one embodiment, it is a schematic side cross-sectional view of the transmission device 1300.

[0080] Figure 14 According to one embodiment, Figure 13 it is a schematic partial top view of the transmission device 1300 shown.

[0081] Figure 15 According to one embodiment, Figure 13 it is a schematic partial top view of the transmission device 1300 shown.

[0082] Figure 16 According to one embodiment, Figure 13 it is a schematic partial top view of the transmission device 1300 shown.

[0083] Figure 17 According to one embodiment, Figure 13 it is a schematic partial top view of the transmission device 1300 shown.

[0084] The transmission device 1300 includes a plurality of substrate supports 1310 ( Figure 13 one is shown in). Each substrate support 1310 may be similar to the substrate support 210 described above and may include one or more of its features, aspects, components, operations, and / or properties.

[0085] Each substrate support 1310 includes an inner segment 1312 and one or more fins 1314. Each inner segment 1312 includes a support portion 1315 on a first side of the one or more fins 1314. Each inner segment 1312 includes an insertion portion 1316 on a second side of the one or more fins 1314. The insertion portion 1316 extends into a retention opening 1309 formed in a recessed surface 420 of one of the plurality of arms 204.

[0086] In Figure 13 the embodiment shown, the shape of the inner segment 1312 is hemispherical (such as hemispherical or semi-ovoid) and rectangular or cylindrical. The shape of each of the one or more fins 1314 is cylindrical or rectangular. The shape of the support portion 1315 is hemispherical (such as hemispherical or semi-ovoid), and the shape of the insertion portion 1316 is cylindrical or rectangular.

[0087] In Figure 14 the embodiment shown, the shape of the inner segment 1312 is cylindrical, and the shape of each of the one or more fins 1314 is cylindrical.

[0088] In Figure 15In the illustrated embodiment, the inner segment 1312 is cylindrical in shape, and each of the one or more fins 1314 is rectangular in shape.

[0089] In Figure 16 In the illustrated embodiment, the inner segment 1312 is rectangular in shape, and each of the one or more fins 1314 is cylindrical in shape.

[0090] In Figure 17 In the illustrated embodiment, the inner segment 1312 is rectangular in shape, and each of the one or more fins 1314 is rectangular in shape.

[0091] Figure 18 FIG. is a schematic side cross-sectional view of a transfer device 1800 according to one embodiment. The transfer device 1800 may be similar to the transfer device 700 described above and may include one or more of its features, aspects, components, operations, and / or properties.

[0092] The transfer device 1800 includes one or more heat conduction elements 1830 that are embedded in an inner segment 412 of at least one (e.g., each) of the plurality of substrate supports 410. Each heat conduction element 1830 is configured to heat and / or cool the corresponding substrate support 410, the substrate 102 supported thereon, and / or the body 202 (such as the arm 204) using a source 1831 external to the corresponding substrate support 410. The source 1831 is fluidly and / or electrically connected to the heat conduction element 1830. The heat conduction element 1830 may include, for example, cooling channels (through which a fluid such as cooling water, air, or refrigerant flows) and / or electrical wires (through which electricity is conducted) such that the substrate support 410 becomes a resistive heater. The heat conduction element 1830 may include an electrical coil or grid. The cross-section of the heat conduction element 1830 may be circular (as shown in Figure 18 FIG. ) or rectangular. In one or more embodiments, the heat conduction element 1830 is positioned inside the one or more fins 414 and is at least partially positioned between the support portion 415 and the insertion portion 416. In one or more embodiments, the source 1831 is a battery mounted on the body 202 (such as the arm 204). The present disclosure contemplates that the source 1831 may be external to the body 202. For example, the source 1831 may be the power source of a transfer robot. In one or more embodiments, the source 1831 is wirelessly charged and / or the one or more heat conduction elements 1830 are wirelessly powered.

[0093] The heat conduction element 1830 can be used to preheat the substrate support 410 and the body 202 before the substrate support 410 and the body 202 contact the substrate 102, and / or to cool the substrate 102 when the substrate 102 is supported on the substrate support 410.

[0094] Figure 19 According to one embodiment, FIG. 1900 is a schematic side cross-sectional view of a transfer device 1900. The transfer device 1900 may be similar to the transfer device 700 described above and may include one or more of its features, aspects, components, operations, and / or properties. The transfer device 1900 includes one or more heat conduction elements 1930 that are embedded in an inner section 412 of at least one (e.g., each) of the plurality of substrate supports 410. Each heat conduction element 1930 may be similar to the heat conduction element 1830 described above and may include one or more of its features, aspects, components, operations, and / or properties.

[0095] In Figure 19 the illustrated embodiment, the heat conduction element 1930 has a rectangular cross-section.

[0096] Figure 20 According to one embodiment, FIG. 2000 is a schematic block diagram of a method 2000 for processing a substrate for semiconductor manufacturing.

[0097] Operation 2002 of method 2000 includes: heating a substrate positioned in a processing volume of a processing chamber.

[0098] Operation 2004 includes: flowing one or more process gases over the substrate to form one or more layers on the substrate.

[0099] Operation 2006 includes: moving a transfer device into the processing volume. The transfer device is the transfer device discussed herein (such as the transfer device 200 described above).

[0100] Operation 2008 includes: engaging the substrate with a plurality of substrate supports (such as substrate support 210) of the transfer device.

[0101] Operation 2010 includes: moving the substrate out of the processing volume while the substrate is supported on the plurality of substrate supports.

[0102] Optional operation 2012 includes: heating or cooling the plurality of substrate supports using one or more heat conduction elements embedded in the plurality of substrate supports.

[0103] Optional operation 2014 of method 2000 includes: moving a second substrate into the processing volume of the processing chamber while the second substrate is supported on the plurality of substrate supports of the transfer device.

[0104] Optional operation 2016 includes: disengaging the second substrate from the plurality of substrate supports.

[0105] Optional operations 2018 include: moving the transfer device out of the processing volume.

[0106] Figure 21 According to one embodiment, it is a schematic curve view of a graph 2100, which shows the relationship between the substrate temperature (in degrees Celsius) and time (in seconds) of a plurality of cooling curves 2101 - 2105 of a substrate. The cooling curves 2101 - 2105 correspond to different heating powers used to process and heat the substrate, such that from the first curve 2101 to the fifth curve 2105, the heating power increases. For example, the first curve 2101 has the lowest heating power, the fifth curve 2105 has the highest heating power, the heating power of the second curve 2102 is lower than that of the third curve 2103, and the heating power of the fourth curve 2104 is higher than that of the third curve 2103.

[0107] As shown in graph 2100, the higher the processing temperature (such as the temperature to which the substrate is heated), the longer the time required for the substrate to cool to the target temperature after processing. As shown in graph 2100, the higher the heating power used for processing, the longer the time required for the substrate to cool to the target temperature after processing. A longer time means that the operation must wait longer to cool the substrate (which may lead to extended downtime and reduced throughput), or there will be a greater temperature difference between the substrate and the transfer device when the substrate is placed on the transfer device for removal from the chamber. When the substrate contacts the transfer device, a larger temperature difference between the substrate and the transfer device may increase the chance of the substrate being thermally shocked, which may cause defects in the substrate (such as bending and / or breaking).

[0108] The objectives described herein help to reduce or eliminate the chance of thermal shock (and associated defect opportunities), while facilitating substrate processing using higher processing temperatures and / or higher heating powers (which helps to improve deposition uniformity and equipment performance, reduce processing time, reduce downtime, and increase throughput). For example, a heating temperature of 600 degrees Celsius or higher can be used, such as 1,000 degrees Celsius or higher. As an example, the substrate support described herein (such as the thickness ratio and / or size ratio) is conducive to reducing the contact surface area between the substrate and the substrate support, while facilitating the expansion of the substrate support area that absorbs heat (such as absorbing heat from chamber components such as substrate support 106) before contacting the substrate, to reduce the temperature difference.

[0109] Benefits of the present disclosure include reducing or eliminating the chance of thermal shock (and associated defect opportunities such as warping and / or breaking); reducing the temperature difference between the substrate and the transfer device; accelerating the heating and / or cooling of the transfer device (e.g., reducing the cooling time); reducing or eliminating the chance of substrate defects (such as scratching and / or particle buildup); increasing the processing temperature; increasing the heating power; improving deposition uniformity and equipment performance; reducing processing time, latency, and downtime; and increasing throughput.

[0110] It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations, and / or properties of the various embodiments of processing chamber 100, controller 120, transfer device 200, transfer device 400, transfer device 700, transfer device 1300, transfer device 1800, transfer device 1900, method 2000, and / or graph 2100 may be combined together. Additionally, it is contemplated that one or more aspects disclosed herein may include some or all of the above benefits.

[0111] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from its basic scope, which is determined by the claims that follow.

Claims

1. A transfer device for moving a substrate related to semiconductor manufacturing, the transfer device comprising: A main body; And A plurality of substrate supports, at least part of the plurality of substrate supports being inserted into the main body, each of the plurality of substrate supports comprising: An inner section; And One or more fins, the one or more fins extending outward relative to the inner section, Each of the inner section and the one or more fins comprises silicon carbide (SiC).

2. The transfer device according to claim 1, wherein the main body is a blade, and each of the inner section and the one or more fins is formed of the SiC.

3. The transfer device according to claim 1, wherein each of the inner section and the one or more fins is formed of graphite coated with the SiC.

4. The transfer device according to claim 1, wherein the inner section is spherical, and the shape of each of the one or more fins is cylindrical or rectangular.

5. The transfer device according to claim 1, wherein the shape of the inner section is rectangular, and the shape of each of the one or more fins is cylindrical or rectangular.

6. The transfer device according to claim 1, wherein the shape of the inner section is cylindrical, and the shape of each of the one or more fins is cylindrical or rectangular.

7. The transfer device according to claim 1, wherein the shape of the inner section is hemispherical and cylindrical, and the shape of each of the one or more fins is cylindrical or rectangular.

8. The transfer device according to claim 1, the transfer device further comprising one or more heat conduction elements embedded in the inner section of at least one of the plurality of substrate supports.

9. A transfer device for moving a substrate related to semiconductor manufacturing, the transfer device comprising: A main body, the main body comprising: A wrist, and A plurality of arms, the plurality of arms defining a support surface, each of the plurality of arms having an arm thickness, and each of the plurality of arms being formed of an arm material; and A plurality of substrate supports, at least part of the plurality of substrate supports being inserted into the support surface of the main body, each of the plurality of substrate supports being formed of a support material different from the arm material, and each of the plurality of substrate supports comprising: An inner section; and One or more fins, the one or more fins extending outward relative to the inner section, each of the one or more fins having a fin thickness, the fin thickness being a thickness ratio of the arm thickness, the thickness ratio being 0.7 or less.

10. The transfer device according to claim 9, wherein the support material comprises silicon carbide (SiC), and the arm material comprises quartz (SiO2).

11. The transfer device according to claim 9, wherein the wrist comprises a wrist lug, each of the plurality of arms comprises an arm lug, and each of the plurality of substrate supports is positioned inside the wrist lug and each arm lug.

12. The transfer device according to claim 9, wherein the inner section comprises: A support portion, the support portion being located on a first side of the one or more fins, the support portion extending across the support surface; and An insertion portion, the insertion portion being located on a second side of the one or more fins, the insertion portion extending into a retention opening formed in one of the plurality of arms.

13. The transfer device according to claim 12, wherein the support portion extends across the support surface by a gap, the gap being a gap ratio of the arm thickness, the gap ratio being 0.3 or higher.

14. The transfer device according to claim 9, wherein the inner section has a segmented major dimension, and each of the one or more fins has a fin major dimension, wherein the fin major dimension is greater than the segmented major dimension.

15. The transfer device according to claim 14, wherein the fin major dimension is a dimension ratio of the arm thickness, the dimension ratio being 2.0 or higher.

16. The transfer device according to claim 15, wherein the dimension ratio is 4.0 or higher.

17. The transfer device according to claim 9, wherein the thermal conductivity of the support material is at least 100 W / m*°K.

18. The transfer device according to claim 17, wherein the absorptivity of the support material absorbs at least 95% of light having a wavelength in the infrared (IR) range.

19. A method of processing a substrate for semiconductor manufacturing, the method comprising: Heating a substrate positioned in a processing volume of a processing chamber; Flowing one or more process gases over the substrate to form one or more layers on the substrate; Moving a transfer device into the processing volume, the transfer device comprising: A body, and A plurality of substrate supports, the plurality of substrate supports being at least partially inserted into the body, each of the plurality of substrate supports comprising silicon carbide (SiC); Engaging the substrate with the plurality of substrate supports; and Removing the substrate from the processing volume while the substrate is supported on the plurality of substrate supports.

20. The method according to claim 19, the method further comprising: Heating or cooling the plurality of substrate supports using one or more heat transfer elements embedded in the plurality of substrate supports.

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