Method and device for uniform magnetron sputtering coating of curved surface sample

Abstract

The invention provides a method and a device for uniform magnetron sputtering coating of a curved surface sample, the method and the device are used for magnetron sputtering coating of a substrate sample of a rotational symmetry body taking a first direction as a rotation axis, the method comprises the following steps: the substrate sample is uniformly divided into N continuous coating sections along the first direction, and N is a positive integer greater than or equal to 2; based on the numerical value of N, the size of the substrate sample and the shape of the substrate sample, the position of the sputtering target corresponding to each coating section is set, and the vertical sputtering distance H between the sputtering target and each coating section is kept equal; and rotating the substrate sample around the first direction, and carrying out magnetron sputtering on the plurality of coating sections through the sputtering target. According to the method for uniform magnetron sputtering coating of the curved surface sample, the substrate sample is subjected to refined management and control, the distance and angle difference caused by the large curvature of the substrate sample is compensated, it is ensured that uniform coating is achieved at the extreme curvature, the thickness uniformity of a coating film layer is improved, and the production efficiency and the target material utilization rate are improved.

Description

Technical Field

[0001] The present application relates to the technical field of coating, and in particular, to a method and device for uniformly magnetron sputtering coating on a curved surface sample. Background Art

[0002] In order to improve the optoelectronic performance, mechanical strength, corrosion resistance and other characteristics of products, it is necessary to coat the surface of samples of substrate materials such as glass. The coating technology for the surfaces of curved and spherical samples has gradually become a key technology in industrial production in some fields. For example, in the manufacturing fields of automotive windshields, aircraft cockpit canopies and portholes, and ship portholes, etc., coating is required to achieve various functions such as electromagnetic shielding, antireflection, and protection. Among them, the thickness uniformity of the coating film layer is crucial, which determines the consistency and reliability of the overall performance of the product, ensures the service life of the final product, and at the same time improves the use safety and appearance quality of the product. Among them, the magnetron sputtering coating technology has a fast deposition rate, high efficiency, and good film density, and is suitable for coating most planar samples and curved surface samples. However, for samples with a curved substrate, due to its certain curvature, traditional planar coating technologies are prone to cause uneven film layer thickness in different regions, greatly reducing the performance stability and making it difficult to meet product requirements.

[0003] The existing coating method for samples with a curved substrate adopts the magnetron sputtering coating method. The moving mechanism is used to sequentially move different regions of the curved substrate sample to the predetermined coating position, and the emission rate of the sputtering material is adjusted through the correction mechanism to match the coating rate required for each region, compensating for the geometric differences between each part of the curved substrate sample and the sputtering source, so as to ensure that the film layer thickness on the entire substrate sample surface is uniform. This method is only applicable to coating the surface of samples with a small curvature.

[0004] However, for substrate samples with a larger curvature such as a rotationally symmetric body, such as a hemispherical cover, a frustum-shaped cover, etc., due to the large differences in the distances and angles of each point on its surface to the target, the existing correction mechanisms are difficult to accurately compensate for such a large range of distance changes. Especially at the extreme curvature, the distance change may cause some regions of the target material not to be fully sputtered onto the sample surface, resulting in too low film layer thickness in this part of the region, affecting the uniformity of the film layer on the sample surface; and, the correction mechanism causes a large amount of coating material to be blocked or deviated from the target area, resulting in waste of the target material. Summary of the Invention

[0005] The purpose of the embodiments of the present application is to provide a method and device for uniformly magnetron sputtering coating on a curved surface sample, so as to ensure the coating uniformity of a substrate sample with a large curvature such as a rotationally symmetric body, and at the same time reduce the consumption of the target material.

[0006] To solve the above technical problems, a first aspect of the present application provides a method for uniformly magnetron sputtering coating on a curved surface sample, which is used for magnetron sputtering coating on a substrate sample of a rotationally symmetric body with the first direction as the rotation axis, including:

[0007] The substrate sample is uniformly divided into N consecutive coating sections along the first direction, where N is a positive integer greater than or equal to 2; for example, N can be 2, 3, 4, 5, 6, 7, 8 or even more, etc.

[0008] Based on the value of N, the size of the substrate sample, and the shape of the substrate sample, the position of the sputtering target corresponding to each coating section is set, and the perpendicular sputtering distance H between the sputtering target and each coating section is kept equal;

[0009] The substrate sample is rotated around the first direction, and during the rotation process, magnetron sputtering is performed on the multiple coating sections through the sputtering target.

[0010] In some embodiments, the calculation formula for N is:

[0011]

[0012] where N is the total number of the coating sections, unit: piece;

[0013] L is the side length of the section of the substrate sample along the first direction, unit: mm;

[0014] D is the diameter of the sputtering area set by the sputtering target, unit: mm;

[0015] The D is equal to the width of each coating section.

[0016] In some embodiments, the method for setting the position of the sputtering target corresponding to each coating section based on the value of N, the size of the substrate sample, and the shape of the substrate sample includes:

[0017] When the side of the substrate sample is a straight line parallel to the first direction, the sputtering targets corresponding to adjacent coating sections have a spacing distance ΔZ along the first direction 矩 ; where ΔZ 矩 = D.

[0018] In some embodiments, the method for setting the position of the sputtering target corresponding to each coating section based on the value of N, the size of the substrate sample, and the shape of the substrate sample includes:

[0019] When the side of the substrate sample is a straight line with an acute angle α with the first direction, the sputtering targets corresponding to adjacent coating sections have a spacing distance ΔZ along the first direction 斜 , ΔZ 斜 The calculation formula of is:

[0020]

[0021] where, ΔZ 斜 The unit of is mm;

[0022] The sputtering targets corresponding to adjacent coating sections have a spacing distance ΔX along the second direction 斜 , the second direction is perpendicular to the first direction, ΔX 斜 The calculation formula of is:

[0023]

[0024] where, ΔX 斜 The unit of is mm.

[0025] In some embodiments, the method of setting the positions of the sputtering targets corresponding to each coating section based on the value of N, the size of the substrate sample, and the shape of the substrate sample includes:

[0026] When the side of the substrate sample is arc-shaped, the sputtering targets corresponding to adjacent coating sections have an angular difference Δθ, and the calculation formula of Δθ is:

[0027]

[0028] where, β is the central angle corresponding to the side, unit: degree;

[0029] The sputtering targets corresponding to adjacent coating sections have a spacing distance ΔZ along the first direction 弧 , then:

[0030] ΔZ 弧，m =|(R + H)cos(m - 1)Δθ - (R + H)cos(m - 2)Δθ|

[0031] where, ΔZ 弧，m is the spacing distance along the first direction between the mth coating section and the (m - 1)th coating section, unit: mm; m is a positive integer greater than or equal to 2;

[0032] R is the radius of the circle where the side is located, mm;

[0033] The sputtering targets corresponding to adjacent coating sections have a spacing distance ΔX along the second direction弧 , where the second direction is perpendicular to the first direction, then:

[0034] ΔX 弧，m = |(R + H)sin(m - 1)Δθ - (R + H)sin(m - 2)Δθ|

[0035] where ΔX 弧，m is the spacing distance between the m-th coating section and the (m - 1)-th coating section along the second direction, unit: mm.

[0036] In some embodiments, the method of magnetron sputtering multiple coating sections through the sputtering target includes:

[0037] Magnetron sputter multiple coating sections one by one through the sputtering target, and adjust the position of the sputtering target before sputtering each coating section.

[0038] In some embodiments, before magnetron sputtering multiple coating sections through the sputtering target, it further includes:

[0039] Based on the value of N, the size and shape of the substrate sample, set the position of the ion source corresponding to each coating section, and keep the perpendicular working distance between the ion source and each coating section equal;

[0040] Rotate the substrate sample around the first direction, and during the rotation, clean multiple coating sections through the ion source.

[0041] In some embodiments, the number of substrate samples is multiple, and it further includes:

[0042] In a vacuum environment, sequentially move multiple substrate samples to the sputtering position, and each substrate sample stays at the sputtering position for a preset time; wherein, the sputtering position is the effective sputtering area of the sputtering target.

[0043] The second aspect of the present application provides a device for uniformly magnetron sputtering coating on a curved surface sample, including:

[0044] A vacuum container having a working chamber;

[0045] The first adjustment mechanism, located in the working chamber, includes a first driving member, a second driving member, a third driving member, and a sputtering target; the first driving member is respectively connected to the vacuum container and the second driving member, the third driving member is respectively connected to the second driving member and the sputtering target, the first driving member is used to drive the second driving member to move along a second direction, the second driving member is used to drive the third driving member to move along a first direction, and the third driving member is used to drive the sputtering target to rotate around a third direction, and the first direction, the second direction, and the third direction are perpendicular to each other in pairs;

[0046] The workbench, located in the working chamber, is rotatably connected to the vacuum container around the first direction, and the workbench is used to connect the substrate sample;

[0047] The fourth driving member is respectively connected to the workbench and the vacuum container, and is used to drive the workbench to rotate around the first direction.

[0048] In some embodiments, it further includes:

[0049] The second adjustment mechanism, located in the working chamber and arranged at an interval from the first adjustment mechanism, includes a first actuator, a second actuator, a third actuator, and an ion source;

[0050] The first actuator is respectively connected to the vacuum container and the second actuator, the third actuator is respectively connected to the second actuator and the ion source, the first actuator is used to drive the second actuator to move along the second direction, the second actuator is used to drive the third actuator to move along the first direction, and the third actuator is used to drive the ion source to rotate around the third direction.

[0051] In some embodiments, the number of the workbenches is multiple, and it further includes:

[0052] The rotating platform, located in the working chamber, is rotatably connected to the vacuum container around the first direction; the multiple workbenches are arranged at equal intervals along a circumferential trajectory;

[0053] The fifth driving member is respectively connected to the vacuum container and the rotating platform, and the fifth driving member is used to drive the rotating platform to rotate around the first direction so that the multiple workbenches sequentially rotate to the sputtering position, and the sputtering position is the effective sputtering area of the sputtering target.

[0054] In some embodiments, it further includes:

[0055] The limiting component, movably connected to the workbench, is used to limit the movement of the substrate sample along the plane where the second direction and the third direction are located.

[0056] Compared with the prior art, the method for uniformly magnetron sputtering coating on a curved surface sample provided by the present application divides the substrate sample evenly into N consecutive coating sections along the first direction, enabling each coating section to independently undergo a precisely controlled magnetron sputtering process, thereby achieving fine management and control of the surface of the substrate sample. By keeping the vertical sputtering distance H between the sputtering target and each coating section equal, the distance and angle differences caused by the large curvature of the substrate sample are effectively compensated, ensuring that the coating material can be evenly sputtered onto the surface of the substrate sample even at extreme curvature points, and improving the overall uniformity of the coating thickness. During the rotation of the substrate sample, magnetron sputtering is carried out, which can make the coating material evenly cover each coating section, and is more suitable for a rotationally symmetric substrate sample with a large range of curvature changes, thereby reducing the problem of uneven coating caused by distance changes, improving the coating uniformity of the rotationally symmetric substrate sample with a large curvature, solving the problem of uncontrollable coating thickness for the large curvature substrate sample, and having important practical significance and technical market. Moreover, since the sputtering target always accurately faces the target area throughout the coating process, the material waste caused by the traditional correction mechanism is avoided, the consumption of the target material is reduced, and the utilization efficiency of the target material is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] By referring to the following detailed description with reference to the accompanying drawings, the above and other objects, features, and advantages of the exemplary embodiments of the present application will become readily understandable. In the drawings, several embodiments of the present application are shown in an exemplary rather than restrictive manner, and the same or corresponding reference numerals represent the same or corresponding parts, where:

[0058] Figure 1 Schematically shows a structural diagram of the apparatus for uniformly magnetron sputtering coating on a curved surface sample of the present application;

[0059] Figure 2 Schematically shows a structural diagram of the sputtering target and the substrate sample of the apparatus for uniformly magnetron sputtering coating on a curved surface sample of the present application;

[0060] Figure 3 Schematically shows a front view of the sputtering target corresponding to the first coating section in the method for uniformly magnetron sputtering coating on a curved surface sample of the present application;

[0061] Figure 4 Schematically shows a top view of the sputtering target corresponding to the first coating section in the method for uniformly magnetron sputtering coating on a curved surface sample of the present application;

[0062] Figure 5 Schematically shows a front view of the sputtering target corresponding to the second coating section in the method for uniformly magnetron sputtering coating on a curved surface sample of the present application;

[0063] Figure 6Schematically shows a top view of the sputtering target corresponding to the second coating section in the method for uniformly magnetron sputtering coating a curved sample of the present application;

[0064] Figure 7 Schematically shows a front view of the sputtering target corresponding to the third coating section in the method for uniformly magnetron sputtering coating a curved sample of the present application;

[0065] Figure 8 Schematically shows a top view of the sputtering target corresponding to the third coating section in the method for uniformly magnetron sputtering coating a curved sample of the present application;

[0066] Figure 9 Schematically shows a front view of the sputtering target corresponding to the m-th coating section in the method for uniformly magnetron sputtering coating a curved sample of the present application;

[0067] Figure 10 Schematically shows a top view of the sputtering target corresponding to the m-th coating section in the method for uniformly magnetron sputtering coating a curved sample of the present application.

[0068] Explanation of reference numerals in the drawings:

[0069] 1. First adjustment mechanism; 11. First driving member; 12. Second driving member; 13. Third driving member; 14. Sputtering target; 2. Workbench; 3. Second adjustment mechanism; 31. First actuator; 32. Second actuator; 33. Third actuator; 34. Ion source; 4. Rotating platform; 5. Limiting assembly; 6. Substrate sample; 61. Coating section; A. First direction; B. Second direction; C. Third direction. Detailed implementation manners

[0070] Hereinafter, the exemplary embodiments of the present disclosure will be described in more detail with reference to the drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure can be more thoroughly understood and the scope of the present disclosure can be completely conveyed to those skilled in the art.

[0071] It should be noted that unless otherwise specified, the technical terms or scientific terms used in the present application should have the ordinary meanings understood by those skilled in the art to which the present application belongs.

[0072] Referring to the attached Figure 1 and Figure 2 , a first aspect of the present application provides a method for uniformly magnetron sputtering coating a curved sample, which is used for magnetron sputtering coating a curved substrate sample 6 and for magnetron sputtering coating a substrate sample 6 that is a rotationally symmetric body with the first direction A as the rotation axis. It includes:

[0073] The base sample 6 is uniformly divided into N consecutive coating segments 61 along the first direction A, where N is a positive integer greater than or equal to 2;

[0074] Specifically, for the target of the magnetron sputtering method of the present application, according to the functional requirements of the coating, a metal target (such as an aluminum target, a gold target, a titanium target, etc.), an alloy target (such as a titanium-aluminum target, a nickel-chromium target, a zirconium-aluminum target, etc.), or a composite oxide target (such as indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, or gallium-doped zinc oxide, etc.) can be selected. The base sample 6 of the present application can include a cover formed in at least one of the following shapes: the shape of the base sample 6 can be cylindrical, frustum-shaped, conical, spherical, or a symmetric convex or concave surface that is not a standard geometric body, such as a part of a sphere. The part of the sphere can be a spherical cap, and the spherical cap is a circular top region formed after being cut by a plane; the part of the sphere can be a spherical segment, and the spherical segment is the middle part formed after cutting the sphere by two parallel planes. The material of the base sample 6 of the present application can be selected from glass, polycarbonate, polymethyl methacrylate, etc.

[0075] The value of N can be determined according to the curvature change of the base sample 6. When the curvature change of the base sample 6 is large, a larger value of N can be adopted to provide finer zoning control, compensate for the geometric differences between different regions, and ensure the consistency and uniformity of the coating thickness; when the curvature change of the base sample 6 is small, a smaller value of N can be adopted to simplify the process flow and improve efficiency while ensuring the coating uniformity. Taking the hemispherical base sample 6 as an example, when the diameter of the hemispherical base sample 6 is small, the curvature of its surface is relatively large, and the curvature change per unit area is significant. In this case, a larger value of N can be set to more precisely adapt to the rapidly changing curvature and ensure the coating uniformity; when the diameter of the hemispherical base sample 6 is large, the local curvature change of its surface is relatively small, that is, the corresponding curvature change per unit area is relatively gentle. In this case, a smaller value of N can be set to simplify the process and improve efficiency.

[0076] The value of N can be determined according to the requirement of the base sample 6 for the coating uniformity. When the base sample 6 has a high requirement for the coating uniformity, a larger value of N can be selected to achieve finer control; when the base sample 6 has a low requirement for the coating uniformity, a smaller value of N can be selected to simplify the process flow and improve efficiency while ensuring the coating uniformity.

[0077] The value of N can be determined according to the side length of the section of the base sample 6 along the first direction A. In some embodiments, the calculation formula for N is:

[0078]

[0079] Wherein, N is the total number of the coating sections 61, unit: piece;

[0080] L is the side length of the section of the substrate sample 6 along the first direction A, unit: mm;

[0081] D is the diameter of the sputtering area set by the sputtering target 14, unit: mm;

[0082] The D is equal to the width of each coating section 61.

[0083] Specifically, when the substrate sample 6 is cylindrical, L is the height of the substrate sample 6; when the substrate sample 6 is frustum-shaped, L is the generatrix length of the substrate sample 6; when the substrate sample 6 is conical, L is the generatrix length of the substrate sample 6; when the substrate sample 6 is a part of a sphere, L is 1 / 2 of the total arc length of the section of the substrate sample 6 along the first direction A. Taking the substrate sample 6 as a hemisphere as an example, the calculation formula of L is:

[0084]

[0085] Wherein, R is the radius of the hemispherical substrate sample 6, mm.

[0086] The value of L can be directly measured by measuring tools such as calipers or tape measures; or, it can be obtained by calculation according to known parameters, etc.

[0087] The diameter D of the sputtering area of the sputtering target 14 can be determined by system settings, that is, according to relevant parameters input by the user (such as the vertical sputtering distance H, coating material characteristics, etc.), the system automatically generates the optimal value D of the diameter of the sputtering area 优 , substitute D 优 into the following calculation formula:

[0088]

[0089] Wherein, D 优 is the optimal value of the diameter of the sputtering area of the sputtering target 14 automatically generated by the system, unit: mm;

[0090] N 计 is the total number of the coating sections 61 when the diameter of the sputtering area is the optimal value, unit: piece.

[0091] When N 计 is a positive integer greater than or equal to 2, at this time D 优 = D, N 计 = N.

[0092] When N 计When N is a non-positive integer greater than or equal to 2, the closest positive integer N can be obtained by rounding. For example, when N 计 = 5.3, then N = 5; when N 计 = 5.7, then N = 6. Then, the actual value D of the diameter of the sputtering area is calculated according to the following formula 实 :

[0093]

[0094] where D 实 is the actual value of the diameter of the sputtering area of the sputtering target 14, unit: mm;

[0095] According to the calculated D 实 fine-tune the relevant input parameters to ensure the consistency and high quality of the coating process.

[0096] Based on the value of N, the size and the shape of the substrate sample 6, set the position of the sputtering target 14 corresponding to each coating section 61, and keep the perpendicular sputtering distance H between the sputtering target 14 and each coating section 61 equal.

[0097] The position of the sputtering target 14 corresponding to the first coating section 61 can be specifically designed according to the shape and size of the substrate sample 6.

[0098] In some embodiments, the method of setting the position of the sputtering target 14 corresponding to each coating section 61 based on the value of N, the size and the shape of the substrate sample 6 includes:

[0099] When the side of the substrate sample 6 is a straight line parallel to the first direction A, the sputtering targets 14 corresponding to adjacent coating sections 61 have a spacing distance ΔZ along the first direction A 矩 ; where ΔZ 矩 = D.

[0100] Specifically, the side of the substrate sample 6 is a straight line parallel to the first direction A, that is, the substrate sample 6 is cylindrical. The multiple coating sections 61 are all cylindrical and are uniformly and continuously arranged along the height direction of the substrate sample 6, and the length of each coating section 61 along the height direction of the substrate sample 6 is equal to D. Among them, the sputtering target 14 corresponding to the first coating section 61 can be directly opposite to the middle of the first coating section 61 along its height direction. This arrangement ensures that each coating section 61 can receive uniform material deposition, thereby realizing the coating uniformity on the entire surface of the substrate sample 6.

[0101] In some embodiments, the method for setting the position of the sputtering target 14 corresponding to each coating section 61 based on the value of N, the size of the substrate sample 6, and the shape of the substrate sample 6 includes:

[0102] When the side of the substrate sample 6 is a straight line having an acute angle α with the first direction A, the sputtering targets 14 corresponding to adjacent coating sections 61 have a spacing distance ΔZ along the first direction A 斜 , ΔZ 斜 The calculation formula of is:

[0103]

[0104] wherein, ΔZ 斜 The unit of is mm;

[0105] The sputtering targets 14 corresponding to adjacent coating sections 61 have a spacing distance ΔX along the second direction B 斜 , the second direction B is perpendicular to the first direction A, ΔX 斜 The calculation formula of is:

[0106]

[0107] wherein, ΔX 斜 The unit of is mm.

[0108] Specifically, the side of the substrate sample 6 is a straight line having an acute angle α with the first direction A, that is, the substrate sample 6 is conical or frustum-shaped. When the substrate sample 6 is conical, the first coating section 61 can be conical, and the remaining coating sections 61 can all be frustum-shaped; when the substrate sample 6 is frustum-shaped, multiple coating sections 61 can all be frustum-shaped. Multiple coating sections are arranged uniformly and continuously along the generatrix of the substrate sample 6, and the length of each coating section 61 along the generatrix direction of the substrate sample 6 is equal to D. Among them, the sputtering target 14 corresponding to the first coating section 61 can be directly opposite to the middle of the first coating section 61 along its generatrix direction. This arrangement ensures that each coating section 61 can receive uniform material deposition, thereby achieving coating uniformity on the entire surface of the substrate sample 6.

[0109] In some embodiments, the method for setting the position of the sputtering target 14 corresponding to each coating section 61 based on the value of N, the size of the substrate sample 6, and the shape of the substrate sample 6 includes:

[0110] When the side of the substrate sample 6 is arc-shaped, the sputtering targets 14 corresponding to adjacent coating sections 61 have an angular difference Δθ, and the calculation formula of Δθ is:

[0111]

[0112] Wherein, β is the central angle corresponding to the side, unit: degree;

[0113] The sputtering targets 14 corresponding to the adjacent coating sections 61 have a spacing distance ΔZ along the first direction A 弧 , then:

[0114] ΔZ 弧，m = |(R + H)cos(m - 1)Δθ - (R + H)cos(m - 2)Δθ|

[0115] Wherein, ΔZ 弧，m is the spacing distance along the first direction A between the m-th coating section 61 and the (m - 1)-th coating section 61, unit: mm; m is a positive integer greater than or equal to 2.

[0116] R is the radius of the circle where the side is located, mm;

[0117] The sputtering targets 14 corresponding to the adjacent coating sections 61 have a spacing distance ΔX along the second direction B 弧 , and the second direction B is perpendicular to the first direction A, then:

[0118] ΔX 弧，m = |(R + H)sin(m - 1)Δθ - (R + H)sin(m - 2)Δθ|

[0119] Wherein, ΔX 弧 is the spacing distance along the second direction B between the m-th coating section 61 and the (m - 1)-th coating section 61, unit: mm.

[0120] Specifically, the side of the substrate sample 6 is arc-shaped, that is, the substrate sample 6 is a part of a sphere (spherical crown or spherical segment). When the substrate sample 6 is a spherical crown, the first coating section 61 can be a spherical crown, and the remaining coating sections 61 can all be spherical segments; when the substrate sample 6 is a spherical segment, the multiple coating sections 61 can all be spherical segments. The multiple coating sections 61 are uniformly and continuously arranged along the arc of the substrate sample 6, and the arc length of each coating section 61 along the one-sided arc direction of the substrate sample 6 is equal to D. Among them, the sputtering target 14 corresponding to the first coating section 61 can be directly opposite to the middle of the first coating section 61 along its arc length. This arrangement ensures that each coating section 61 can receive uniform material deposition, thereby realizing the coating uniformity on the entire surface of the substrate sample 6.

[0121] Taking the substrate sample 6 as a hemispherical spherical crown and sputtering the substrate sample one by one with a single sputtering target as an example:

[0122] Such as Figure 3 andFigure 4 As shown, the sputtering target 14 corresponding to the first plating ring zone is in the initial position. The angle between the sputtering target 14 at the initial position and the first direction A is set to 0°. The initial position of the sputtering target 14 along the second direction B is 0, and the initial position of the sputtering target 14 along the first direction A is R + H;

[0123] As Figure 5 and Figure 6 shown, the rotation angle of the sputtering target 14 corresponding to the second coating section 61 is Δθ (at this time, the angle between it and the rotation axis is Δθ); the distance moved along the first direction is: ΔZ 弧，2 = |(R + H)cosΔθ - (R + H)|; the distance moved along the second direction is: ΔX 弧，2 = |(R + H)sinΔθ|;

[0124] As Figure 7 and Figure 8 shown, the rotation angle of the sputtering target 14 corresponding to the third coating section 61 is Δθ (at this time, the angle between it and the rotation axis is 2Δθ); the distance moved along the first direction is: ΔZ 弧，3 = |(R + H)cos2Δθ - (R + H)cosΔθ|; ΔX 弧，3 = |(R + H)sin2Δθ - (R + H)sinΔθ|;

[0125] And so on... As Figure 9 and Figure 10 shown, the rotation angle of the sputtering target 14 corresponding to the m-th coating section 61 is Δθ (at this time, the angle between it and the rotation axis is (m - 1)Δθ), and the distance moved along the first direction is: ΔZ 弧，m = |(R + H)cos(m - 1)Δθ - (R + H)cos(m - 2)Δθ|; the distance moved along the second direction is: ΔX 弧，m = |(R + H)sin(m - 1)Δθ - (R + H)sin(m - 2)Δθ|.

[0126] When the substrate sample is sputtered by multiple sputtering targets, with each sputtering target corresponding to the substrate sample one by one, the setting of the position of each sputtering target can refer to the above.

[0127] In the case where the substrate sample 6 is a combination of multiple shapes (for example, a hemispherical shape and a frustum shape, or a hemispherical shape and a cylindrical shape, etc.), the individual basic shapes that make up the combination can be identified and classified first. Taking the substrate sample 6 of the combination of a hemispherical shape and a frustum shape as an example, the N value of the hemispherical shape and the N value of the frustum shape can be calculated respectively, and then based on the N value of the hemispherical shape and the size of the hemispherical substrate sample 6, the position of the sputtering target 14 corresponding to each coating section 61 is set, and the vertical sputtering distance H between the sputtering target 14 and each coating section 61 is kept equal; then based on the numerical value of N of the frustum shape and the size of the frustum-shaped substrate sample 6, the position of the sputtering target 14 corresponding to each coating section 61 is set, and the vertical sputtering distance H between the sputtering target 14 and each coating section 61 is kept equal. And / or,

[0128] In the case where the substrate sample 6 is a combination of the same shape but different sizes (for example, two frustums with different sizes, or two spherical segments with different sizes, etc.). The individual basic parts that make up the combination can be identified and classified first, the N value of each part is calculated, and then based on the shape of each part, the size of each part, and the N value of each part, the position of the sputtering target 14 corresponding to each coating section 61 of each part is set.

[0129] Rotate the substrate sample 6 around the first direction A, and during the rotation process, magnetron sputtering is performed on the plurality of coating sections 61 through the sputtering target 14.

[0130] Specifically, the linear velocity v of the rotation of the substrate sample 6 and the number of sputtering layers Q of the coating section 61 corresponding to the sputtering target 14 affect the coating time t of the coating section 61 corresponding to the sputtering target 14 镀 ,t 镀 The calculation formula of is:

[0131]

[0132] wherein, v is the linear velocity of the rotation of the substrate sample 6, unit: mm / min;

[0133] C is the circumference of the coating section 61 corresponding to the sputtering target 14, unit: mm;

[0134] Q is the number of sputtering layers of the coating section 61 corresponding to the sputtering target 14, unit: layer;

[0135] t 镀 is the time of the coating section 61 corresponding to the sputtering target 14, unit: min.

[0136] The number of sputtered layers Q is the number of rotations of the substrate sample 6 when the sputtering target 14 is sputtered with the same target material. That is, when the sputtering target 14 is sputtered with the same target material, the number of rotations of the substrate sample 6 directly affects the value of Q. The v of the substrate sample 6 affects the thickness of the final coating. When v is small, each coating section 61 of the substrate sample 6 stays under the sputtering source for a longer time, more material is deposited, and the coating thickness is larger; when v is large, each coating section 61 of the substrate sample 6 stays under the sputtering source for a shorter time, less material is deposited, and the coating thickness is smaller. Q affects the thickness of the final coating. When Q is small, less material is deposited and the coating thickness is smaller; when Q is large, more material is deposited and the coating thickness is larger. The value of Q can be achieved by the number of rotations of the substrate sample 6. For example, when coating a certain coating section 61, when the substrate sample 6 rotates 5 circles, it means coating 5 layers on this coating section 61; when the substrate sample 6 rotates 6 circles, it means coating 6 layers on this coating section 61, and so on.

[0137] When sputtering a certain substrate sample 6, in order to ensure the sputtering uniformity, the linear velocity v of the substrate sample 6 remains unchanged during the entire coating process, and the number of sputtered layers Q of multiple coating sections of the substrate sample 6 is kept consistent. When coating multiple substrate samples 6, the v and Q can be appropriately adjusted according to the actual required coating thickness of each substrate sample 6.

[0138] In some embodiments, the method of magnetron sputtering multiple coating sections 61 through the sputtering target 14 includes:

[0139] Magnetron sputtering multiple coating sections 61 one by one through the sputtering target 14, and adjusting the position of the sputtering target 14 before sputtering each coating section 61;

[0140] First, determine the position of the sputtering target 14 corresponding to the first coating section 61 according to the shape and size of the substrate sample 6; then, start the sputtering equipment and perform magnetron sputtering on the first coating section 61. After the sputtering of the first coating section 61 is completed, calculate the position of the sputtering target 14 corresponding to the second coating section 61, and adjust the sputtering target 14 to the position corresponding to the second coating section 61 according to the calculation result; finally, repeat the above steps until all coating sections 61 are sputtered. If the substrate sample 6 is a combination, for its transition region (such as from one frustum to another frustum, or from a hemisphere to a frustum, etc.), the position of the sputtering target 14 in the transition region needs to be adjusted according to the basic shape and size of the combination to ensure the coating continuity and uniformity on the entire surface of the combination. By using one sputtering target 14 to perform magnetron sputtering on multiple coating sections 61, the equipment configuration and operation steps are simplified.

[0141] Before magnetron sputtering the substrate sample 6, the substrate sample 6 can be cleaned by the ion source 34. During the cleaning process, the ion source 34 can be set at a fixed position, and the substrate sample 6 can be rotated around the first direction A to ensure the cleaning effect. Alternatively, in order to enhance the cleaning effect on the substrate sample 6, in some embodiments, before magnetron sputtering the multiple coating sections 61 by the sputtering target 14, it further includes:

[0142] Based on the value of N, the size and the shape of the substrate sample 6, set the position of the ion source 34 corresponding to each coating section 61, and keep the perpendicular working distance between the ion source 34 and each coating section 61 equal;

[0143] Rotate the substrate sample 6 around the first direction A, and during the rotation process, clean the multiple coating sections 61 by the ion source 34.

[0144] Specifically, for the method of adjusting the position of the ion source 34, reference can be made to the method of adjusting the position of the sputtering target 14, which will not be elaborated here. By the way of cleaning one by one by the ion source 34, the uniformity and consistency of the cleaning of the surface of the substrate sample 6 can be significantly improved, thereby enhancing the quality and adhesion of the subsequent coating and laying a foundation for the uniformity of the coating. The number of times the ion source 34 cleans each coating section 61 can be once or multiple times. When each coating section 61 is cleaned multiple times, it is achieved by rotating the substrate sample 6 multiple circles.

[0145] In some embodiments, the number of the substrate samples 6 is multiple, and it further includes:

[0146] In a vacuum environment, move the multiple substrate samples 6 to the sputtering position in sequence, and each substrate sample 6 stays at the sputtering position for a preset time; wherein, the sputtering position is the effective sputtering area of the sputtering target 14.

[0147] Specifically, the multiple substrate samples 6 can be moved to the sputtering position in sequence through a transmission system. The multiple substrate samples 6 can be arranged at equal intervals along a circular trajectory on a rotating platform 4 rotating around the first direction A, and the multiple substrate samples 6 are rotated to the sputtering position in sequence by the rotating rotating platform 4; or, the multiple substrate samples 6 can be arranged at equal intervals along a straight line on a linear transmission device, and the multiple substrate samples 6 are moved to the sputtering position in sequence through the linear transmission device. The preset time for each substrate sample 6 to stay at the sputtering position can be designed according to specific magnetron sputtering process parameters (such as coating thickness, material deposition rate, etc.) to ensure that each substrate sample 6 can complete a complete coating within the preset time. The multiple substrate samples 6 are moved to the sputtering position in sequence, and then multiple substrate samples 6 can be coated after one vacuum pumping, constant temperature and other preparatory work, realizing batch coating and greatly shortening the coating time.

[0148] The sputtering positions can be one or more. When there are multiple sputtering positions, the sputtering materials of the sputtering targets 14 at the multiple sputtering positions can be different to meet different coating requirements. The arrangement mode of the multiple sputtering positions can refer to the arrangement mode of the multiple substrate samples 6.

[0149] In some embodiments, when the number of the substrate samples 6 is multiple, and the target materials to be sputtered on the multiple substrate samples 6 are the same, and only one layer of target material needs to be sputtered on the surface of each substrate sample 6, multiple sputtering targets 14 can be set. Each sputtering target is located at one sputtering position. The number of the sputtering targets 14 can be the same as the number of the substrate samples 6. The sputtering targets 14 and the substrate samples 6 are in one-to-one correspondence to realize simultaneous sputtering of the multiple sputtering targets 14 on the multiple substrate samples 6 and improve the coating efficiency. For example, when the number of the substrate samples 6 is 3, and each substrate sample 6 needs to be sputtered with a single layer of silicon oxide. In this case, 3 sputtering targets 14 can be used, and each sputtering target 14 is used to sputter a single layer of silicon oxide on one substrate sample 6 to realize simultaneous sputtering coating of 3 samples.

[0150] In some embodiments, multiple layers of target materials can be sputtered on the surface of the substrate sample 6 to form a multi-layer film system structure. In this case, there can be one sputtering target 14. After the sputtering target 14 finishes sputtering the first layer of material on all the substrate samples 6, the target material of the sputtering target 14 can be replaced, and then the second layer of material can be sputtered on all the substrate samples 6, and so on until the sputtering of multiple layers of materials is completed to form the required multi-layer film system structure. Or,

[0151] The number of sputtering targets 14 is at least two, and the target materials of at least two sputtering targets 14 are different. The number of sputtering targets 14 can be designed according to the types of target materials to be sputtered. The first sputtering target 14 can be in the first sputtering position, the second sputtering target 14 can be in the second sputtering position, and so on. When the number of substrate samples 6 is one, the substrate sample 6 can be sputtered first by the first sputtering target 14. After the magnetron sputtering coating of all coating sections 61 of the substrate sample 6 is completed, the substrate sample 6 is moved to the second sputtering position, and then the substrate sample 6 is sputtered by the second sputtering target 14. Repeat the coating process in this way until all coatings are completed. When the number of substrate samples 6 is multiple, the first substrate sample 6 can be sputtered first by the first sputtering target 14. After the magnetron sputtering coating of all coating sections 61 of the first substrate sample 6 is completed, the second substrate sample 6 is moved to the first sputtering position, and the second substrate sample 6 is sputtered by the first sputtering target 14. At this time, the first substrate sample 6 can be sputtered synchronously by the second sputtering target 14 to improve the sputtering efficiency; or, after the first sputtering target 14 sputters all the substrate samples 6 one by one in the above manner, the second sputtering target 14 can be used to sputter all the substrate samples 6 one by one in the above manner to ensure the coating effect. Repeat the coating process in this way until all coatings are completed.

[0152] Taking the target material of the first sputtering target 14 as material E, the target material of the second sputtering target 14 as material F, and the target material of the third sputtering target 14 as material G as an example. When the film system structure is (substrate - EFEFE), the first sputtering target 14 can be used to coat all the substrate samples 6 first to complete the first film layer E, and then the second sputtering target 14 can be used to coat all the substrate samples 6 to complete the second film layer F; then the first sputtering target 14 is used to coat all the substrate samples 6 to complete the third film layer E; then the second sputtering target 14 is used to coat all the substrate samples 6 to complete the fourth film layer F; finally, the first sputtering target 14 is used to coat all the substrate samples 6 to complete the fifth film layer E.

[0153] When the film system structure is (substrate - EFGEF), the first sputtering target 14 can be used to coat all the substrate samples 6 first to complete the first film layer E, and then the second sputtering target 14 can be used to coat all the substrate samples 6 to complete the second film layer F; then the third sputtering target 14 is used to coat all the substrate samples 6 to complete the third film layer G; then the first sputtering target 14 is used to coat all the substrate samples 6 to complete the fourth film layer E; finally, the second sputtering target 14 is used to coat all the substrate samples 6 to complete the fifth film layer F.

[0154] Compared with the prior art, the method for uniformly magnetron sputtering coating on a curved surface sample provided in the first aspect of the present application divides the substrate sample 6 into N continuous coating sections 61 uniformly along the first direction A, so that each coating section 61 can independently receive a precisely controlled magnetron sputtering process, realizing fine management and control of the surface of the substrate sample 6; by keeping the perpendicular sputtering distance H between the sputtering target 14 and each coating section 61 equal, effectively compensating for the distance and angle differences caused by the large curvature of the substrate sample 6, ensuring that the coating material can be uniformly magnetron sputtered onto the surface of the substrate sample 6 even at extreme curvatures, and improving the overall uniformity of the coating thickness; magnetron sputtering during the rotation of the substrate sample 6 can make the coating material uniformly cover each coating section 61, and is more adaptable to the rotationally symmetric body substrate sample 6 with a large range of curvature changes, thereby reducing the problem of uneven coating caused by distance changes, improving the coating uniformity of the large curvature substrate sample 6 of the rotationally symmetric body, solving the problem of uncontrollable coating thickness of the large curvature substrate sample 6, and having important practical significance and technology market. Moreover, since the sputtering target 14 always accurately faces the target area throughout the coating process, it avoids the material waste caused by traditional correction mechanisms, reduces the consumption of the target material, and improves the utilization efficiency of the target material.

[0155] Example 1

[0156] Take three substrate samples 6 with the same shape, material, and size. The three substrate samples 6 are all hemispherical, and the radius of each of the three substrate samples 6 is 100 mm; the material of the three substrate samples 6 is all glass;

[0157] Each substrate sample 6 is uniformly divided into 3 continuous coating sections 61 along the first direction A;

[0158] Rotate the substrate sample 6 around the first direction A, and clean each of the multiple coating sections 61 of each substrate sample 6 one by one through the ion source 34. Before cleaning each coating section 61, adjust the position of the ion source 34 to keep the perpendicular working distance between the ion source 34 and each coating section 61 at 60 mm; among them, each coating section 61 is cleaned once;

[0159] After all the coating sections 61 are cleaned, magnetron sputtering coating is carried out on each of the multiple coating sections 61 of each substrate sample 6 one by one through the sputtering target 14. Before sputtering each coating section 61, adjust the position of the sputtering target 14 to keep the perpendicular working distance between the sputtering target 14 and each coating section 61 at 70 mm; among them, the number of sputtering layers for each coating section 61 is 6 (that is, the substrate sample 6 rotates 6 circles), and the target material sputtered by the sputtering target 14 is indium tin oxide;

[0160] After finishing coating a substrate sample 6, move the next substrate sample 6 to the sputtering position until all three substrate samples 6 are completely coated. Name the three coated substrate samples 6 as parallel sample 1, parallel sample 2, and parallel sample 3 respectively;

[0161] Record the total time t for coating the three parallel samples;

[0162] Record the total amount of target material M required for coating the three parallel samples;

[0163] Uniformly select 9 measurement points on the surface of each parallel sample, measure the surface resistance value of this point using a non-contact surface resistance meter, and calculate the range R of the resistance values of the 9 measurement points of each parallel sample P ;

[0164] Uniformly select 9 measurement points on the surface of each parallel sample, measure its transmittance using a spectrophotometer, and calculate the range R of the transmittances of the 9 measurement points of each parallel sample T 。

[0165] Example 2

[0166] The difference between Example 2 and Example 1 is that: the number of sputtered layers in each coating section 61 is 8.

[0167] Example 3

[0168] The difference between Example 3 and Example 2 is that: each substrate sample 6 is uniformly divided into 4 continuous coating sections 61 along the first direction A;

[0169] Example 4

[0170] Take three substrate samples 6 with the same shape, material, and size. The three substrate samples 6 are all hemispherical, and the radius of the three substrate samples 6 is 200 mm; the material of the three substrate samples 6 is polycarbonate;

[0171] Each substrate sample 6 is uniformly divided into 5 continuous coating sections 61 along the first direction A;

[0172] Rotate the substrate sample 6 around the first direction A, and clean each coating section 61 of each substrate sample 6 one by one through the ion source 34. Before cleaning each coating section 61, adjust the position of the ion source 34 to keep the vertical working distance between the ion source 34 and each coating section 61 at 60 mm; among them, each coating section 61 is cleaned once;

[0173] After the cleaning of all the coating sections 61 is completed, magnetron sputtering coating is carried out on the multiple coating sections 61 of each substrate sample 6 one by one through the sputtering target 14. Before sputtering for each coating section 61, the position of the sputtering target 14 is adjusted to keep the vertical working distance between the sputtering target 14 and each coating section 61 at 70 mm; among them, the number of sputtering layers for each coating section 61 is 10, and the target material sputtered by the sputtering target 14 is gold;

[0174] After the coating of one substrate sample 6 is completed, the next substrate sample 6 is moved to the sputtering position until the coating of all three substrate samples 6 is completed. The three coated substrate samples 6 are respectively named parallel sample 1, parallel sample 2, and parallel sample 3;

[0175] Record the coating time t of the three parallel samples;

[0176] Record the total amount of target material M required for the coating of the three parallel samples;

[0177] Uniformly select 9 measurement points on the surface of each parallel sample, measure the surface resistance value of this point using a non-contact surface resistance meter, and calculate the range R of the resistance values of the 9 measurement points of each parallel sample P ;

[0178] Uniformly select 9 measurement points on the surface of each parallel sample, measure its transmittance using a spectrophotometer, and calculate the range R of the transmittance of the 9 measurement points of each parallel sample T ;

[0179] Example 5

[0180] The difference between Example 5 and Example 4 is that: the number of sputtering layers for each coating section 61 is 12.

[0181] The difference between Example 6 and Example 5 is that: each substrate sample is uniformly divided into 6 consecutive coating sections along the first direction.

[0182] Comparative Example 1

[0183] The difference between Comparative Example 1 and Example 1 is that: the coating is carried out by using the traditional method of adjusting the emission rate of the sputtering material through a correction mechanism.

[0184] Comparative Example 2

[0185] The difference between Comparative Example 2 and Example 4 is that: the coating is carried out by using the traditional method of adjusting the emission rate of the sputtering material through a correction mechanism.

[0186] Table 1 Recorded and calculated data of the three parallel samples in Examples 1 - 6 and Comparative Examples 1 - 2

[0187]

[0188]

[0189] It can be concluded from Examples 1-6 and Comparative Examples 1-2 that in Examples 1-6, the magnetron detection method of the present application is used for coating, and the range R of the resistance values of the 9 measurement points measured for each parallel sample P ≤3, which is much smaller than the minimum value of 7.9 of the ranges of Comparative Examples 1 and 2; the range R of the resistance values of the 9 measurement points measured for each parallel sample T ≤5, which is much smaller than the minimum value of 9.7 of the ranges of Comparative Examples 1 and 2, indicating that the coating uniformity of the magnetron coating method of the present application is relatively high. Moreover, the coating time of Examples 1-6 is much less than that of Comparative Examples 1 and 2, indicating that the present application can greatly improve the coating efficiency. The total amount of target materials consumed in Examples 1-6 is much less than that of Comparative Examples 1-2, indicating that the present application can significantly reduce the consumption of target materials and improve the utilization rate of target materials.

[0190] It can be seen from Examples 1 and 2, and Examples 4 and 5 that when other conditions remain unchanged, when the number of sputtering layers in each coating section increases, the coating uniformity will be improved to some extent, the total coating time t increases, and the total amount of target materials required increases.

[0191] It can be seen from Examples 2 and 3, and Examples 5 and 6 that when other conditions remain unchanged, when the number of coating sections evenly divided along the first direction of the substrate sample increases (i.e., the N value increases), the coating uniformity will be improved to a large extent.

[0192] As Figures 1 to 10 shown, the second aspect of the present application provides a device for uniformly magnetron sputtering coating on a curved surface sample, including:

[0193] A vacuum container having a working chamber;

[0194] A first adjustment mechanism 1 located in the working chamber, including a first driving member 11, a second driving member 12, a third driving member 13 and a sputtering target 14; the first driving member 11 is respectively connected to the vacuum container and the second driving member 12, the third driving member 13 is respectively connected to the second driving member 12 and the sputtering target 14, the first driving member 11 is used to drive the second driving member 12 to move along the second direction B, the second driving member 12 is used to drive the third driving member 13 to move along the first direction A, the third driving member 13 is used to drive the sputtering target 14 to rotate around the third direction C, and the first direction A, the second direction B and the third direction C are perpendicular to each other in pairs;

[0195] A workbench 2 located in the working chamber and rotatably connected to the vacuum container around the first direction A, and the workbench 2 is used to connect the substrate sample 6;

[0196] A fourth driving member, which is respectively connected to the workbench 2 and the vacuum container, and is configured to drive the workbench 2 to rotate about the first direction A.

[0197] Specifically, the device for uniformly magnetron sputtering coating on a curved surface sample according to the second aspect of the present application can be used for magnetron sputtering coating on a curved substrate sample 6, and can be used for magnetron sputtering coating on a substrate sample 6 of a rotationally symmetric body with the first direction A as the rotation axis; alternatively, magnetron sputtering can be performed on a polyhedron composed of multiple planes (such as a triangular prism, a quadrangular prism, etc.) by adjusting the position of the sputtering target 14.

[0198] The vacuum container is configured to ensure a highly vacuum state inside the working chamber, reduce the interference of air molecules and other impurities on the coating process, and improve the coating quality. The specific structure of the vacuum container is known to those skilled in the art and will not be elaborated herein.

[0199] The first adjusting mechanism 1 is configured to adjust the position and angle of the sputtering target 14 to achieve coating on different positions of the substrate sample 6 and ensure the uniformity of the coating. The entire first adjusting mechanism 1 is located inside the working chamber. The first driving member 11 can be connected to the vacuum container by means of a flange or bolts. The vacuum container can be configured with a first sliding groove extending along the second direction B, and the second driving member 12 can be slidably connected to the vacuum container along the second direction B through the first sliding groove to ensure the stability of the sliding. The first driving member 11 can be a linear motor or a lead screw nut mechanism. The driving end of the first driving member 11 can be connected to the second driving member 12 by means of bolts or welding to ensure the stability of the connection. The second driving member 12 can be a linear motor or a lifting gearbox. The driving end of the second driving member 12 can be connected to the third driving member 13 by means of bolts or welding to ensure the stability of the connection. The third driving member 13 can be a stepping motor, a servo motor or a worm and gear transmission mechanism.

[0200] The workbench 2 is used to connect and fix the substrate sample 6 to ensure the stability of the substrate sample 6 during the entire coating process. The cross-section of the workbench 2 can be circular, rectangular, or other shapes, etc. A clamping portion can be configured on the first surface of the workbench 2 along the first direction A. The first surface of the workbench 2 can be spaced and opposite to the first driving member 11 along the first direction A. The shape of the clamping portion can be adapted to the shape of the inner side of the substrate sample 6, and the inner side of the substrate sample 6 can be clamped with the clamping portion. The clamping portion not only provides physical fixation but also ensures the precise position of the substrate sample 6 relative to the workbench 2, enhancing the uniformity of the coating. The vacuum container can be configured with a circular second chute. At least three first pulleys can be configured on the second surface of the workbench 2 opposite to the first surface along the first direction A. At least three first pulleys can be arranged at equal intervals along a circumferential trajectory. At least three first pulleys are slidably connected to the second chute to ensure the stability of the rotation of the workbench 2. The first pulley can be connected to the workbench 2 by bolts or welding, etc., to ensure its stability and reliability during long-term use.

[0201] The fourth driving member is responsible for driving the workbench 2 to rotate around the first direction A, so that different positions of the substrate sample 6 sequentially pass through the effective sputtering area of the sputtering target 14, thereby realizing uniform material deposition. The fourth driving member can be located between at least three first pulleys. The fourth driving member can be connected to the vacuum container by means of a flange or bolts, etc. The second surface of the workbench 2 can be recessed inward along the first direction A to form a mounting hole, and the mounting hole is located at the rotation axis of the workbench 2. The driving end of the fourth driving member can be connected to the mounting hole by interference fit or riveting, etc., to drive the workbench 2 to rotate around the first direction A. The fourth driving member can be selected from a stepper motor, a servo motor, or a worm and worm gear transmission mechanism, etc.

[0202] Compared with the prior art, the device for uniformly magnetron sputtering coating of curved surface samples provided in the second aspect of the present application reduces the interference of air molecules and other impurities on the coating process through the working chamber of the vacuum container, improving the coating quality; precisely controls and adjusts the position and angle of the sputtering target 14 through the three driving members of the first adjustment mechanism 1. This multi-degree-of-freedom adjustment ability ensures that the sputtering target 14 can be accurately positioned at any required position, ensuring the consistency and uniformity of the coating, and at the same time avoiding waste of the target material; uses the fourth driving member to drive the workbench 2 to rotate around the first direction A, so that different positions of the substrate sample 6 sequentially pass through the effective sputtering area of the sputtering target 14, enabling each area to fully receive the sputtering material, thereby realizing uniform coating on the entire surface of the substrate sample 6. The sputtering coating device of the present application realizes multi-degree-of-freedom adjustment ability through the first adjustment mechanism 1, combined with the rotation function of the workbench 2, not only improves the uniformity of the coating, but also optimizes the use of the sputtering target 14 and improves the utilization rate of the target material.

[0203] As Figure 1As shown, in some embodiments, it further includes:

[0204] A second adjusting mechanism 3, located in the working chamber and arranged at intervals with the first adjusting mechanism 1. The second adjusting mechanism 3 includes a first actuator 31, a second actuator 32, a third actuator 33, and an ion source 34;

[0205] The first actuator 31 is respectively connected to the vacuum container and the second actuator 32. The third actuator 33 is respectively connected to the second actuator 32 and the ion source 34. The first actuator 31 is used to drive the second actuator 32 to move along the second direction B. The second actuator 32 is used to drive the third actuator 33 to move along the first direction A. The third actuator 33 is used to drive the ion source 34 to rotate around the third direction C.

[0206] Specifically, the second adjusting mechanism 3 can precisely control the position and angle of the ion source 34 to achieve the cleaning treatment of different positions of the substrate sample 6, ensuring the uniformity and consistency of cleaning, and laying a foundation for subsequent uniform coating. The second adjusting mechanism 3 has a spacing from the first adjusting mechanism 1 to avoid mutual interference and ensure the independent operation of the two.

[0207] The first actuator 31 can be selected from a linear motor or a lead screw nut mechanism, etc. The first actuator 31 can be the same as the first driving part 11, or the first actuator 31 can be different from the first driving part 11. The second actuator 32 can be selected from a linear motor or a lifting gearbox, etc. The second actuator 32 can be the same as the second driving part 12, or the second actuator 32 can be different from the second driving part 12. The third actuator 33 can be selected from a stepping motor, a servo motor or a worm and worm gear transmission mechanism, etc. The third actuator 33 can be the same as the third driving part 13, or the third actuator 33 can be different from the third driving part 13.

[0208] As Figure 1 、 Figures 2 to 10 shown, in some embodiments, the number of the worktables 2 is multiple, and it further includes:

[0209] A rotating platform 4, located in the working chamber and rotatably connected to the vacuum container around the first direction A; the multiple worktables 2 are arranged at equal intervals along a circumferential trajectory;

[0210] A fifth driving member, respectively connected to the vacuum container and the rotating platform 4. The fifth driving member is used to drive the rotating platform 4 to rotate around the first direction A, so that the multiple worktables 2 are sequentially rotated to the sputtering position, and the sputtering position is the effective sputtering area of the sputtering target 14.

[0211] Specifically, the rotating platform 4 is used to achieve continuous and efficient coating of multiple substrate samples 6, realizing the coating of batch substrate samples 6 and improving the coating efficiency. The number of worktables 2 can be specifically designed according to requirements. For example, it can be two, three, four, five or even more, etc. The cross-sectional area of the rotating platform 4 can be circular or rectangular, etc. Among them, the cross-sectional area of the rotating platform 4 is preferably circular to reduce the space occupied by the rotating platform 4 and make the overall structure more compact.

[0212] The first end face of the rotating platform 4 along the first direction A can be spaced and opposite to the first driving member 11 along the first direction A. The fourth driving member can be connected to the first end face of the rotating platform 4, and the first end face can be configured with a second sliding groove. The vacuum container can be configured with a circular third sliding groove. The second end face of the rotating platform 4 opposite to the first end face along the first direction A can be configured with at least three second pulleys. The at least three second pulleys can be arranged at equal intervals along a circular track. The at least three second pulleys are slidably connected to the third sliding groove to ensure the stability of the rotation of the rotating platform 4. The second pulleys can be connected to the rotating platform 4 by bolts or welding, etc., to ensure its stability and reliability during long-term use.

[0213] The fifth driving member is responsible for driving the rotating platform 4 to rotate around the first direction A, so that the multiple worktables 2 sequentially pass through the effective sputtering area of the sputtering target 14, thereby realizing the coating of batch substrate samples 6. The fifth driving member can be located between at least three second pulleys. The fifth driving member can be connected to the vacuum container by means of a flange or bolts, etc. The second end face of the rotating platform 4 can be recessed inward along the first direction A to form a connection hole, and the connection hole is located at the rotation axis of the rotating platform 4. The driving end of the fifth driving member can be connected to the connection hole by interference fit or riveting, etc., to drive the worktable 2 to rotate around the first direction A. The fifth driving member can be selected from a stepper motor, a servo motor or a worm and gear transmission mechanism, etc.

[0214] As Figure 1 shown, in some embodiments, it further includes:

[0215] The limiting component 5 is movably connected to the worktable 2, and the limiting component 5 is used to limit the movement of the substrate sample 6 along the plane where the second direction B and the third direction C are located.

[0216] Specifically, the limiting component 5 can be detachably connected to the workbench 2. The limiting component 5 is used to contact the inner side of the substrate sample 6 to achieve limiting. The limiting component 5 can include at least three first limiting members. A plurality of first assembly holes arranged at intervals can be configured on the workbench 2. The number of the first assembly holes can be greater than the number of the first limiting members. Each first limiting member can be in interference fit or screwed connection with a first assembly hole. By means of the plurality of first assembly holes, the arrangement shape and / or size of at least three first limiting members can be changed to achieve the limiting of substrate samples 6 of different sizes and shapes, so as to improve the adaptability. A flexible layer can be configured on the outside of the first limiting member. The flexible layer can be made of rubber or silica gel to ensure the integrity of the inner side of the substrate sample 6. Or,

[0217] The limiting component 5 can include a fixture and a plurality of second limiting members. Each second limiting member can be clamped or adhered to the workbench 2. The shape and size of the fixture are adapted to the substrate sample 6. The fixture can be detachably connected to the plurality of second limiting members in a detachable manner such as screwing or clamping. The outer surface of the fixture can be completely attached to the inner surface of the substrate sample 6 to achieve the limiting of the substrate sample 6. There can be a plurality of fixtures, and the shapes or sizes of the plurality of fixtures are different from each other. The specific number of the fixtures can be specifically designed according to the shape and size of the substrate sample 6 so that each fixture is adapted to a type of substrate sample 6, thereby improving the adaptability. Or,

[0218] The limiting component 5 can include at least three locking members and at least three third limiting members. Each third limiting member can be slidably connected to the workbench 2. The locking members and the third limiting members can be in one-to-one correspondence. The locking members are used to limit the sliding of the third limiting members. The locking members can be selected from abutting bolts, spring pins, etc.

[0219] As described above, the above is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed in the present application can easily think of changes or substitutions, which should all be covered by the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A method for uniformly magnetron sputtering coating on a curved surface sample, for magnetron sputtering coating on a substrate sample of a rotationally symmetrical body with a first direction as a rotation axis, characterized in that: include: Uniformly dividing the substrate sample into N continuous coating sections along the first direction, where N is a positive integer greater than or equal to 2; Based on the value of N, the size of the substrate sample and the shape of the substrate sample, the position of the sputtering target corresponding to each of the coating sections is set to keep the vertical sputtering distance H between the sputtering target and each of the coating sections equal; The substrate sample is rotated around the first direction, and during the rotation process, magnetron sputtering is performed on the plurality of coating sections through the sputtering target.

2. The method for uniform magnetron sputtering coating of curved surface samples according to claim 1, characterized in that: The calculation formula of N is: Wherein, N is the total number of the coating sections, unit: piece; L is the side length of the cut surface of the substrate sample along the first direction, unit: mm; D is the diameter of the sputtering area set by the sputtering target, unit: mm; The D is equal to the width of each of the coating sections.

3. The method for uniform magnetron sputtering coating of curved surface samples according to claim 2, characterized in that: The method for setting the position of the sputtering target corresponding to each coating section based on the value of N, the size of the substrate sample and the shape of the substrate sample includes: In the case where the side of the substrate sample is a straight line parallel to the first direction, the sputtering targets corresponding to the adjacent coating sections have a spacing distance ΔZ along the first direction. 矩 ; where ΔZ 矩 =D.

4. The method for uniform magnetron sputtering coating of curved surface samples according to claim 2, characterized in that: The method for setting the position of the sputtering target corresponding to each coating section based on the value of N, the size of the substrate sample and the shape of the substrate sample includes: In the case where the side of the substrate sample is a straight line having an acute angle α with the first direction, the sputtering targets corresponding to the adjacent coating sections have a spacing distance ΔZ along the first direction. 斜 , ΔZ 斜 The calculation formula is: Among them, ΔZ 斜 The unit is mm; The sputtering targets corresponding to the adjacent coating sections are spaced apart by a distance ΔX along the second direction. 斜 , the second direction is perpendicular to the first direction, ΔX 斜 The calculation formula is: Where ΔX 斜 The unit is mm.

5. The method for uniform magnetron sputtering coating of curved surface samples according to claim 2, characterized in that: The method for setting the position of the sputtering target corresponding to each coating section based on the value of N, the size of the substrate sample and the shape of the substrate sample includes: When the side of the substrate sample is arc-shaped, the sputtering targets corresponding to adjacent coating sections have an angle difference Δθ, and the calculation formula of Δθ is: Wherein, β is the central angle corresponding to the side, unit: degree; The sputtering targets corresponding to the adjacent coating sections are spaced apart by a distance ΔZ along the first direction. 弧 ,but: ΔZ 弧，m =|(R+H)cos(m-1)Δθ-(R+H)cos(m-2)Δθ| Among them, ΔZ 弧，m is the spacing distance between the m-th coating section and the m-1-th coating section along the first direction, unit: mm, m is a positive integer greater than or equal to 2; R is the radius of the circle corresponding to the side, mm; The sputtering targets corresponding to the adjacent coating sections are spaced apart by a distance ΔX along the second direction. 弧 , the second direction is perpendicular to the first direction, then: ΔX 弧，m =|(R+H)sin(m-1)Δθ-(R+H)sin(m-2)Δθ| Where ΔX 弧，m It is the spacing distance between the m-th coating section and the m-1-th coating section along the second direction, unit: mm.

6. The method for uniformly coating a curved surface sample with magnetron sputtering according to any one of claims 1 to 5, characterized in that: The method of performing magnetron sputtering on the plurality of coating sections by using the sputtering target comprises: The magnetron sputtering is performed on the plurality of coating sections one by one by using the sputtering target, and before the sputtering of each coating section, the position of the sputtering target is adjusted.

7. The method for uniformly coating a curved surface sample with magnetron sputtering according to any one of claims 1 to 5, characterized in that: Before magnetron sputtering the plurality of coating sections by the sputtering target, the method further comprises: Based on the value of N, the size of the substrate sample and the shape of the substrate sample, the position of the ion source corresponding to each of the coating sections is set to keep the vertical working distance between the ion source and each of the coating sections equal; The substrate sample is rotated around the first direction, and during the rotation process, the plurality of coating sections are cleaned by the ion source.

8. The method for uniformly coating a curved surface sample with magnetron sputtering according to any one of claims 1 to 5, characterized in that: The number of the substrate samples is multiple, and further includes: Under a vacuum environment, a plurality of substrate samples are sequentially moved to a sputtering position, and each substrate sample stays at the sputtering position for a preset time; wherein the sputtering position is an effective sputtering area of ​​the sputtering target.

9. A device for uniform magnetron sputtering coating of curved surface samples, characterized in that: include: A vacuum container having a working chamber; A first adjustment mechanism, located in the working chamber, comprises a first driving member, a second driving member, a third driving member and a sputtering target; The first driving member is connected to the vacuum container and the second driving member respectively, the third driving member is connected to the second driving member and the sputtering target respectively, the first driving member is used to drive the second driving member to move along the second direction, the second driving member is used to drive the third driving member to move along the first direction, and the third driving member is used to drive the sputtering target to rotate around a third direction, and the first direction, the second direction and the third direction are perpendicular to each other; A workbench, located in the working chamber and connected to the vacuum container in a rotational manner around the first direction, and the workbench is used to connect a substrate sample; A fourth driving member is connected to the workbench and the vacuum container respectively, and is used to drive the workbench to rotate around the first direction.

10. The device for uniform magnetron sputtering coating of curved surface samples according to claim 9, characterized in that: Also includes: A second regulating mechanism is located in the working chamber and is spaced apart from the first regulating mechanism, wherein the second regulating mechanism comprises a first actuator, a second actuator, a third actuator and an ion source; The first actuator is connected to the vacuum container and the second actuator respectively, the third actuator is connected to the second actuator and the ion source respectively, the first actuator is used to drive the second actuator to move along the second direction, the second actuator is used to drive the third actuator to move along the first direction, and the third actuator is used to drive the ion source to rotate around the third direction.

11. The device for uniform magnetron sputtering coating of curved surface samples according to claim 9, characterized in that: The number of the workbenches is multiple, and also includes: A rotating platform is located in the working chamber and is connected to the vacuum container for rotation around the first direction; a plurality of the working tables are arranged at equal intervals along a circular track; A fifth driving member is connected to the vacuum container and the rotating platform respectively, and is used to drive the rotating platform to rotate around the first direction so that the multiple workbenches rotate to the sputtering position in sequence, and the sputtering position is the effective sputtering area of ​​the sputtering target.

12. The device for uniform magnetron sputtering coating of curved surface samples according to claim 11, characterized in that: Also includes: A limiting component is movably connected to the workbench, and the limiting component is used to limit the movement of the substrate sample along the plane where the second direction and the third direction are located.

Images