Thin film deposition apparatus, thin film deposition method, and base layer

Abstract

The invention provides a thin film deposition device, a thin film deposition method and a base layer. The thin film deposition device comprises a shell, a gasification assembly, a reaction chamber and an oxygen supply assembly. The shell comprises a bottom plate, a top plate and side plates which define a containing space. The gasification assembly and the reaction chamber are both arranged in the containing space, a cavity is defined by the reaction chamber and part of the top plate, a base plate is arranged in the cavity, and the oxygen supply assembly supplies oxygen to the cavity. The reaction chamber is provided with a gate plate, the gate plate is opened to enable the cavity to be communicated with the containing space, the raw material gas in the containing space enters the cavity and is sealed in the cavity, and the oxygen supply assembly provides oxygen for the cavity. The thin film deposition device is provided with the reaction chamber, the reaction chamber is closed when the transition layer is oxidized to form the oxide layer, so that oxygen cannot leak into the containing space, the situation that raw materials in the gasification assembly are polluted due to the fact that raw material gas forms an oxide film on the inner wall of the shell is avoided, and the quality of the formed oxide layer is improved.

Description

Technical Field

[0001] The present application relates to the technical field of thin film deposition, and particularly relates to a thin film deposition device, a thin film deposition method and a substrate layer. Background Art

[0002] A piezoelectric thin film is a material with piezoelectric properties, enabling the piezoelectric thin film to convert mechanical energy into electrical energy and vice versa. The piezoelectric thin film includes a substrate layer and a piezoelectric layer. The substrate layer includes a substrate and an oxide layer, and the piezoelectric layer is formed on the oxide layer. Research has shown that single-crystallizing the piezoelectric layer can improve the piezoelectric properties of the piezoelectric thin film. To obtain a single-crystalline piezoelectric layer, it is necessary to single-crystallize the oxide layer.

[0003] Currently, an oxide layer can be deposited on a substrate through a thin film deposition device. During the deposition of the oxide layer, the raw material is heated and vaporized, and the raw material gas is oxidized before reaching the substrate. The oxidized raw material gas is deposited on the substrate to form a single-crystalline oxide layer. However, during the deposition process, the oxidized raw material gas is also likely to form an oxide film on the inner wall of the thin film deposition device. The peeling of the oxide film onto the raw material causes the raw material to be contaminated, and the re-evaporation of the contaminated raw material will affect the quality of the oxide layer deposited on the substrate.

[0004] Therefore, how to avoid the contamination of the raw material caused by the oxide film on the inner wall of the thin film deposition device in the prior art is an urgent problem to be solved by those skilled in the art. Summary of the Invention

[0005] The present application provides a thin film deposition device, a thin film deposition method and a substrate layer, aiming to solve the problem of contamination of the raw material caused by the oxide film on the inner wall of the thin film deposition device in the prior art.

[0006] In a first aspect, an embodiment of the present application provides a thin film deposition device for forming an oxide layer on a substrate of a piezoelectric thin film. The thin film deposition device includes:

[0007] A housing, the housing includes a bottom plate, a top plate and side plates. The bottom plate and the top plate are opposite and spaced apart, and the side plates are connected between the bottom plate and the top plate. The bottom plate, the top plate and the side plates enclose an accommodation space;

[0008] A vaporization assembly, the vaporization assembly is disposed in the accommodation space and located on the surface of the bottom plate facing the top plate;

[0009] A plurality of reaction chambers, the plurality of reaction chambers are disposed in the accommodation space and located on the top plate. Each reaction chamber and a part of the top plate enclose a cavity for disposing the substrate;

[0010] A plurality of oxygen supply components, each of which is connected to one of the cavities, and is used to provide oxygen to the cavity;

[0011] Each reaction chamber has a gate, and when the gate is opened, the cavity is connected to the accommodating space, the raw material gas in the accommodating space enters the cavity, and the raw material gas is sealed in the cavity, and the oxygen supply component provides oxygen for the cavity.

[0012] The thin film deposition device of the present application is provided with a reaction chamber. When the transition layer is oxidized to form an oxide layer, the reaction chamber is closed so that oxygen will not leak into the accommodating space, and the raw material gas will not be oxidized in the accommodating space, and the raw material gas will not form an oxide film on the inner wall of the shell, and the oxide film will not separate from the gasification component to cause the raw materials in the gasification component to be contaminated, which is beneficial to improve the quality of the formed oxide layer. In addition, the deposition rate of the current existing solution is slow. One reason is that it is a single-chip operation, and the other reason is that oxidation is carried out while deposition, and the deposition rate is very slow. The present invention has multiple independent reaction chambers, and multiple pieces can be deposited independently and simultaneously; and there is no need to introduce oxygen during deposition, so the film deposition quality and rate are faster, thereby improving production efficiency and quality.

[0013] In this implementation, the chamber includes a first sub-chamber, and each of the reaction chambers further includes a plurality of supports, which are connected to the chamber wall of the first sub-chamber and are located in the first sub-chamber. The chamber wall of the first sub-chamber is provided with an opening so that the first sub-chamber is connected to the accommodating space, and the supports are used to carry the substrate. The substrate is placed on the plurality of supports arranged at intervals, so that part of the periphery of the substrate contacts the plurality of supports, and part of the periphery of the substrate that is not in contact with the plurality of supports maintains a distance from the third side wall, so as to facilitate picking up and placing the substrate.

[0014] In this implementation, each of the reaction chambers further includes an inner gate valve, a mounting hole is provided on the cavity wall of the first sub-cavity, the inner gate valve is disposed in the mounting hole, the inner gate valve is opened to allow the first sub-cavity to communicate with the accommodating space, and the inner gate valve is closed to isolate the first sub-cavity from the accommodating space. The inner gate valve is opened to allow a substrate to enter the first sub-cavity through the inner gate valve or to allow a substrate with an oxide layer formed thereon to leave the first sub-cavity through the inner gate valve, and the inner gate valve is closed to isolate the first sub-cavity from the accommodating space, thereby preventing oxygen in the first sub-cavity from leaking into the accommodating space, thereby preventing the raw material gas in the accommodating space from being contaminated.

[0015] In this implementation, the cavity further includes a second sub-cavity, which is connected to and can communicate with the first sub-cavity, and each of the reaction chambers further includes a movable plate, which is closed to isolate the second sub-cavity from the accommodating space, or opened to communicate the second sub-cavity with the accommodating space. The movable plate is the gate of the reaction chamber, and the movable plate is opened to allow the raw material gas to enter the second sub-cavity from the accommodating space, and the movable plate is closed to prevent the oxygen in the second sub-cavity from leaking into the accommodating space, causing the raw material gas in the accommodating space to be contaminated.

[0016] In this implementation, each reaction chamber includes a first side wall, a second side wall, a third side wall and a fourth side wall, the first side wall is arranged on the surface of the top plate facing the accommodating space and is fixedly connected to the top plate, the second side wall is arranged on the side of the first side wall facing away from the top plate and is detachably connected to the first side wall, the third side wall is arranged on the side of the second side wall facing away from the first side wall and is fixedly connected to the second side wall, the fourth side wall is arranged on the side of the third side wall facing away from the second side wall and is detachably connected to the third side wall, the first side wall, the second side wall and the third side wall enclose the first sub-cavity, the third side wall, the fourth side wall and the movable plate enclose the second sub-cavity. Each reaction chamber also includes a first sealing element, a first accommodating groove is provided at one end of the first side wall facing away from the top plate, the first sealing element is embedded in the first accommodating groove, and the first sealing element is sealed at the connection between the first side wall and the second side wall. Each of the reaction chambers further includes a second sealing element, a second containing groove is provided on the side of the third side wall facing away from the first sub-cavity, the second sealing element is embedded in the second containing groove, and the second sealing element is sealed at the connection between the third side wall and the fourth side wall. The first sealing element seals the connection between the first side wall and the second side wall to prevent the oxygen in the first sub-cavity from leaking into the containing space and causing the raw material gas in the containing space to be contaminated. The second sealing element seals the connection between the third side wall and the fourth side wall to prevent the oxygen in the second sub-cavity from leaking into the containing space and causing the raw material gas in the containing space to be contaminated.

[0017] In this implementation, each of the oxygen supply components includes a gas ionization mechanism and a transmission pipeline, wherein the gas ionization mechanism is disposed outside the housing, and the transmission pipeline connects the gas ionization mechanism and the second sub-chamber. The ionized oxygen can accelerate the oxidation rate of the transition layer to reduce the time of forming the oxidation layer.

[0018] In this implementation manner, the thin film deposition device further includes a plurality of heating elements. Each heating element is disposed in the first sub-chamber, and the heating element is configured to emit infrared rays into the first sub-chamber. The heating element emits infrared rays to heat the substrate by means of thermal radiation, so that the heating element does not contact the substrate, thereby avoiding damage to the substrate caused by direct contact between the heating element and the substrate.

[0019] In this implementation manner, the thin film deposition device further includes a first driving assembly. The first driving assembly includes a first driving motor, a first transmission shaft, and a first connecting member. The first driving motor is disposed outside the housing. The first transmission shaft is located in the accommodating space, and the first transmission shaft is in transmission connection with the first driving motor. The first connecting member is disposed at an end of the first transmission shaft facing away from the first driving motor and is fixedly connected to the first driving motor. A plurality of reaction chambers are disposed on the circumferential side of the first connecting member and are fixedly connected to the first connecting member. The first driving motor drives a part of the side walls of the plurality of reaction chambers to open or close simultaneously through the first transmission shaft and the first connecting member. Raw material gas will also form a film layer on the inner wall of the reaction chamber. The first driving motor drives the plurality of third side walls to open simultaneously through the first transmission shaft and the first connecting member, facilitating the cleaning of the film layer on the inner wall of the first side wall, the film layer on the inner wall of the second side wall, and the film layer on the carrying surface, and also facilitating the maintenance of the heating elements and the plurality of support members located in the first sub-chamber.

[0020] In this implementation manner, the thin film deposition device further includes a second driving assembly. The second driving assembly includes a second driving motor, a second transmission shaft, and a second connecting member. The second driving motor is disposed outside the housing. The second transmission shaft is disposed in the accommodating space and is located in a direction facing away from the first transmission shaft of a reaction chamber. The second transmission shaft is in transmission connection with the second driving motor. The second connecting member is disposed in a direction facing the reaction chamber, and opposite ends of the second connecting member are respectively fixedly connected to the movable plate and an end of the second transmission shaft facing away from the second driving motor. The second driving motor drives the movable plate to open or close through the second transmission shaft and the second connecting member. Raw material gas will also form a film layer on the inner wall of the reaction chamber. Opening the movable plate can also facilitate the cleaning of the film layer on the inner wall of the third side wall, the film layer on the inner wall of the fourth side wall, and the film layer on the movable plate.

[0021] In this implementation manner, the gasification component includes a crucible and an electron gun. Both the crucible and the electron gun are disposed in the accommodation space. The crucible is used to contain the raw materials of the oxide layer, and the electron gun is used to emit an electron beam to the raw materials to form the raw material gas. Forming the raw material gas by means of an electron beam can form the raw material gas faster and better control the concentration of the raw material gas in the accommodation space.

[0022] In this implementation manner, the thin film deposition device further includes a first air extraction component. The first air extraction component includes a first vacuum pump and a first air extraction pipeline. The first vacuum pump is disposed outside the housing, and part of the first air extraction pipeline extends into the accommodation space. One end of the first air extraction pipeline is communicated with the first vacuum pump. The first vacuum pump extracts the gas in the accommodation space through the first air extraction pipeline, so that the pressure in the accommodation space maintains a preset pressure value.

[0023] In this implementation manner, the thin film deposition device further includes a second air extraction component. The second air extraction component includes a second vacuum pump and a second air extraction pipeline. The second vacuum pump is disposed outside the housing, and part of the second air extraction pipeline extends into the cavity. One end of the second air extraction pipeline is communicated with the second vacuum pump. The other end of the second air extraction pipeline is communicated with the cavity. The second vacuum pump is used to extract the gas in the cavity through the second air extraction pipeline, so that the pressure in the cavity maintains a predetermined pressure value.

[0024] In a second aspect, an embodiment of the present application further provides a thin film deposition method. The thin film deposition method uses the above-mentioned thin film deposition device. The thin film deposition method includes: placing a substrate in the cavity, adjusting the pressure in the accommodation space to a preset pressure value, adjusting the pressure of the cavity to a predetermined pressure value, heating the temperature of the substrate to a preset temperature; opening the gate of the reaction chamber to form a raw material gas. The raw material gas passes through the accommodation space to the cavity, and the raw material gas is deposited on the surface of the substrate facing the gate to form a transition layer; closing the gate of the reaction chamber, introducing ionized oxygen into the cavity, and the ionized oxygen oxidizes part of the transition layer to form a buffer layer and an oxide layer, wherein the substrate, the buffer layer and the oxide layer are sequentially stacked.

[0025] The technical solution of the present application oxidizes the transition layer in the cavity to form an oxide layer. The raw material gas will not be oxidized in the accommodation space, and the raw material gas will not form an oxide film on the inner wall of the housing. Furthermore, the situation where the oxide film detaches to the crucible and contaminates the raw materials in the crucible will not occur, which is beneficial to improving the quality of the formed oxide layer.

[0026] In this implementation manner, the thin film deposition method further includes: opening the shutter of the reaction chamber to form the raw material gas, the raw material gas passing through the accommodation space to the cavity, and the raw material gas depositing on the surface of the oxide layer facing away from the buffer layer to form a transition layer; closing the shutter of the reaction chamber, and introducing ionized oxygen into the cavity, and the ionized oxygen oxidizes all the transition layers to form an oxide layer. By forming the transition layer multiple times and oxidizing the transition layer into the oxide layer, the thickness of the formed oxide layer meets the actual required thickness.

[0027] In a third aspect, an embodiment of the present application further provides a substrate, which includes a substrate, a buffer layer, and at least one oxide layer stacked, and the buffer layer and at least one of the oxide layers are both formed by the above-mentioned thin film deposition device or both formed by the above-mentioned thin film deposition method. Description of the Drawings

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background art, the following will describe the drawings required to be used in the embodiments of the present application or the background art.

[0029] Figure 1 It is a schematic cross-sectional structure diagram of the thin film deposition device provided by the embodiment of the present application;

[0030] Figure 2 It is a schematic diagram of the process of forming the buffer layer and the oxide layer of the piezoelectric thin film by the thin film deposition device provided by the embodiment of the present application;

[0031] Figure 3 It is a schematic diagram of the process of forming the oxide layer of the piezoelectric thin film by the thin film deposition device provided by the embodiment of the present application;

[0032] Figure 4 For Figure 1 It is an enlarged schematic diagram of the structure VI in the thin film deposition device shown;

[0033] Figure 5 For Figure 1 It is a schematic cross-sectional structure diagram of the thin film deposition device shown along the V-V section;

[0034] Figure 6 For Figure 1 It is a schematic diagram of the structure in which the reaction chamber and the accommodation space of the thin film deposition device shown are separated;

[0035] Figure 7 For Figure 1 It is a schematic diagram of the structure in which the reaction chamber and the accommodation space of the thin film deposition device shown are connected;

[0036] Figure 8 It is a schematic flow chart of the piezoelectric thin film deposition method provided by the embodiment of the present application;

[0037] Figure 9 It is a schematic structural diagram corresponding to step S20 of the thin film deposition method according to an embodiment of the present application;

[0038] Figure 10 It is a schematic structural diagram corresponding to step S30 of the thin film deposition method according to an embodiment of the present application;

[0039] Figure 11 It is a schematic structural diagram corresponding to step S40 of the thin film deposition method according to an embodiment of the present application;

[0040] Figure 12 It is a schematic structural diagram corresponding to step S50 of the thin film deposition method according to an embodiment of the present application;

[0041] Figure 13 It is a schematic diagram of the first layer structure of the base layer according to an embodiment of the present application;

[0042] Figure 14 It is a schematic diagram of the second layer structure of the base layer according to an embodiment of the present application. Detailed implementation manners

[0043] A piezoelectric thin film is a material with piezoelectric properties, enabling the piezoelectric thin film to convert mechanical energy into electrical energy and vice versa. The materials of the piezoelectric thin film include inorganic piezoelectric materials and organic piezoelectric materials. Among them, the inorganic piezoelectric materials include piezoelectric crystals and piezoelectric ceramics. Piezoelectric thin films have a wide range of applications in household appliances, smartphones, industrial equipment, automobiles, the Internet of Things, and medical devices. For example, clocks, radio frequency filters, microphones, speakers, ultrasonic instruments, tactile devices, actuators, sensors, etc. For another example, the piezoelectric thin film in a radio frequency filter converts an electrical signal into a mechanical vibration signal and vice versa to achieve the filtering function of the radio frequency filter; an ultrasonic instrument converts a high-frequency electrical signal into a high-frequency vibration, thereby forming ultrasonic waves.

[0044] The piezoelectric thin film includes a base layer and a piezoelectric layer arranged in a stacked manner. The base layer includes a substrate and an oxide layer arranged in a stacked manner, and the piezoelectric layer is formed on the oxide layer. To improve the piezoelectric properties of the piezoelectric thin film, it is necessary to single-crystallize the piezoelectric layer. The single-crystallized oxide layer is beneficial for the formed piezoelectric layer to also be single-crystallized. In the prior art, during the process of forming a single-crystallized oxide layer, the raw materials will be contaminated, making the gasification of the raw materials unstable, affecting the quality of the formed oxide layer, and the thin film deposition device will generate additional impurities. Therefore, the present application provides a thin film deposition device that can avoid contaminating the raw materials and improve the quality of the formed oxide layer.

[0045] Please refer to Figure 1 , Figure 1Schematic cross-sectional structure diagram of the thin film deposition apparatus provided by the embodiments of the present application. The thin film deposition apparatus 1 is used to form an oxide layer on a substrate 210. The thin film deposition apparatus 1 includes a housing 10, a vaporization assembly 20, a first pumping assembly 30, a plurality of reaction chambers 40, a plurality of second pumping assemblies 50, a plurality of oxygen supply assemblies 70, a plurality of heating elements 80, a first driving assembly 110, and a plurality of second driving assemblies 120. The vaporization assembly 20, the first pumping assembly 30, the plurality of reaction chambers 40, the plurality of second pumping assemblies 50, the plurality of oxygen supply assemblies 70, the plurality of heating elements 80, the first driving assembly 110, and the plurality of second driving assemblies 120 are all connected to the housing 10. The vaporization assembly 20 is used to form a raw material gas from the raw materials of the oxide layer. The first pumping assembly 30 is used to pump out the gas in the housing 10 so that the pressure in the housing 10 remains at a preset pressure value. The process of forming the oxide layer on the substrate is carried out in the reaction chamber 40. The second pumping assembly 50 is used to pump out the gas in the reaction chamber 40 so that the pressure in the reaction chamber 40 remains at a predetermined pressure value. The oxygen supply assembly 70 is used to supply ionized oxygen into the reaction chamber 40. The heating element 80 is used to heat the temperature in the reaction chamber 40 to a preset temperature. The first driving assembly 110 is used to open the plurality of reaction chambers 40 simultaneously. The second driving assembly 120 is used to open the reaction chamber 40.

[0046] The housing 10 includes a bottom plate 11, a top plate 12, and side plates 13. The bottom plate 11 and the top plate 12 are opposite and spaced apart. The side plates 13 are disposed between the bottom plate 11 and the top plate 12 and are respectively connected to the peripheries of the bottom plate 11 and the top plate 12. The bottom plate 11, the top plate 12, and the side plates 13 enclose an accommodation space a. The bottom plate 11 is an overall plate-like structure, the top plate 12 is an overall plate-like structure, and the side plates 13 are an overall cylindrical structure. The thin film deposition apparatus 1 further includes a partition cavity 2a, and the partition cavity 2a communicates with the accommodation space a.

[0047] Specifically, a partition portion 2 is provided on a part of the peripheral side of the side plate 13. The partition portion 2 is connected to the side plate 13 so that the partition portion 2 and a part of the side plate 13 enclose the partition cavity 2a. The partition portion 2 is an overall cylindrical structure. The partition portion 2 is used to separate the thin film deposition apparatus 1 from the apparatus providing the substrate 210. The side plate 13 is provided with an inlet hole penetrating through the side plate 13. The position 3 of the inlet hole corresponds to the position of the partition cavity 2a, and the inlet hole communicates with the accommodation space a and the partition cavity 2a respectively. The housing 10 further includes an outer gate valve 15. The outer gate valve 15 is disposed in the inlet hole. The outer gate valve 15 is used to open or close. When the outer gate valve 15 is opened, the accommodation space a communicates with the partition cavity 2a, and the substrate 210 can enter the accommodation space a through the outer gate valve 15. When the outer gate valve 15 is closed, the accommodation space a is separated from the partition cavity 2a.

[0048] The gasification assembly 20 is disposed within the accommodation space a and is located on the surface of the bottom plate 11 facing the top plate 12. The gasification assembly 20 is used to form a raw material gas from the raw materials of the oxide layer. The gasification assembly 20 includes a crucible 21 and an electron gun 22, and both the crucible 21 and the electron gun 22 are disposed on the surface of the bottom plate 11 facing the top plate 12. The crucible 21 is used to hold the raw materials of the oxide layer, and the electron gun 22 is used to emit an electron beam to the raw materials, so that the temperature of the raw materials rises, and the raw materials evaporate at high temperature to form a gasified raw material. The gasified raw material can be understood as a raw material gas, and the gasified raw material is accommodated within the accommodation space a. In other embodiments, the gasification assembly 20 also causes the raw materials to evaporate into a raw material gas by means of thermal evaporation or sputtering evaporation. The present application does not specifically limit the formation method of the raw material gas.

[0049] The first air extraction assembly 30, the first air extraction assembly 30 includes a first vacuum pump 31 and a first air extraction pipeline 32. The first vacuum pump 31 is disposed outside the housing 10 and is located on the side of the bottom plate 11 facing away from the accommodation space a. The bottom plate 11 is provided with a first installation hole (not labeled in the figure) penetrating through the bottom plate 11. One end of the first air extraction pipeline 32 is communicated with the first vacuum pump 31, and the other end of the first air extraction pipeline 32 extends into the accommodation space a through the first installation hole, that is, the first air extraction pipeline 32 penetrates through the bottom plate 11, so that the other end of the first air extraction pipeline 32 is communicated with the accommodation space a. The first vacuum pump 31 is used to extract the gas within the accommodation space a through the first air extraction pipeline 32, so that the pressure within the accommodation space a remains at a preset pressure value. Herein, "communicated" means: connected and in communication. The first vacuum pump 31 may be a cryogenic vacuum pump.

[0050] In the embodiments of the present application, please refer to Figure 1, the first driving component 110 includes a first driving motor 111, a first transmission shaft 112 and a first connecting member 113. The first driving motor 111 is disposed outside the housing 10 and on the side of the top plate 12 facing away from the accommodating space a. The top plate 12 is provided with a first through hole (not labeled in the figure) penetrating through the top plate 12. The first driving motor 111 covers the first through hole, and the housing of the first driving motor 111 seals the first through hole. The first transmission shaft 112 is disposed in the first through hole and in the accommodating space a, that is, one end of the first transmission shaft 112 passes through the top plate 12, and the two reaction chambers 40 are disposed on opposite sides of the first transmission shaft 112. One end of the first transmission shaft 112 extending into the first through hole is in transmission connection with the first driving motor 111. One end of the first transmission shaft 112 extending into the first through hole is in transmission connection with the first driving motor 111. The first connecting member 113 is disposed at the end of the first transmission shaft 112 facing away from the first driving motor 111 and is fixedly connected to the end of the first transmission shaft 112 facing away from the first driving motor 111. The circumferential side of the first connecting member 113 is fixedly connected to a plurality of reaction chambers 40. The first driving motor 111 is used to drive a plurality of reaction chambers 40 to open simultaneously through the first transmission shaft 112 and the first connecting member 113. Among them, the transmission connection can be a belt transmission connection, a gear transmission connection, a worm and worm gear transmission connection, a shaft transmission connection, a chain transmission connection or a screw transmission connection, etc. The present application does not specifically limit the transmission connection.

[0051] In the embodiment of the present application, please refer to Figure 1 , taking two second driving components 120 as an example for illustration. The second driving component 120 includes a second driving motor 121, a second transmission shaft 122 and a second connecting member 123. The second driving motor 121 is disposed outside the housing 10 and on the side of the top plate 12 facing away from the accommodating space a. The top plate 12 is provided with a plurality of second through holes (not labeled in the figure) penetrating through the top plate 12. One second driving motor 121 covers one second through hole, and the housing of the second driving motor 121 seals the second through hole. One second transmission shaft 122 is disposed in the second through hole and in the accommodating space a, that is, the second transmission shaft 122 passes through the top plate 12. One second transmission shaft 122 is in the direction of the reaction chamber 40 facing away from the first transmission shaft 112. One end of the second transmission shaft 122 extending into the second through hole is in transmission connection with the second driving motor 121. The second connecting member 123 is disposed in the direction of the second transmission shaft 122 facing the reaction chamber 40, and opposite ends of the second connecting member 123 are respectively fixedly connected to the reaction chamber 40 and the end of the second transmission shaft 122 facing away from the second driving motor 121. The second driving motor 121 is used to drive the reaction chamber 40 to open through the second transmission shaft 122 and the second connecting member 123.

[0052] In the embodiment of the present application, please refer to Figure 1, the number of reaction chambers 40 is two. The two reaction chambers 40 are arranged in the accommodation space a and located on the surface of the top plate 12 facing the accommodation space a. The gasification components of the two reaction chambers 40 are spaced along the width direction (X-axis direction) of the housing 10. Each reaction chamber 40 and a part of the top plate 12 enclose a cavity b. Each reaction chamber 40 has a shutter, the shutter is arranged facing the bottom plate 11, and the shutter can be opened or closed. When the shutter of the reaction chamber 40 is opened, the cavity b is communicated with the accommodation space a so that the raw material gas enters the cavity b. When the shutter of the reaction chamber 40 is closed, the cavity b is partitioned from the accommodation space a.

[0053] In the embodiment of the present application, there are two second air extraction components 50. The two second air extraction components 50 are arranged at intervals along the width direction, that is, the two second air extraction components 50 are arranged at intervals along the X-axis direction and located on the opposite sides of the first driving component 110. Each second air extraction component 50 includes a second vacuum pump 51 and a second air extraction pipeline 52. The second vacuum pump 51 is arranged outside the housing 10 and on the side of the top plate 12 facing away from the cavity b. The top plate 12 is provided with a plurality of second installation holes (not labeled in the figure) penetrating through the bottom plate 11, and one second installation hole is communicated with one cavity b. One end of the second air extraction pipeline 52 is communicated with the second vacuum pump 51, and the other end of the second air extraction pipeline 52 extends into the cavity b through the second installation hole, that is, the second air extraction pipeline 52 passes through the top plate 12 so that the other end of the second air extraction pipeline 52 is communicated with the cavity b. The second vacuum pump 51 is used to extract the gas in the cavity b through the second air extraction pipeline 52 so that the pressure in the cavity b is maintained at a predetermined pressure value. The second vacuum pump 51 can be a cryogenic vacuum pump.

[0054] In the embodiment of the present application, there are two oxygen supply components 70. The two oxygen supply components 70 are arranged at intervals along the X-axis direction and are respectively located on one side of the two second driving components 120 facing away from the first driving component 110. Each oxygen supply component 70 includes a gas ionization mechanism 71 and a transmission pipeline 72. The gas ionization mechanism 71 is arranged outside the housing 10 and is located on the surface of the top plate 12 facing away from the accommodation space a. A plurality of through holes (not labeled in the figure) penetrating the top plate 12 are formed on the top plate 12. The housing of the gas ionization mechanism 71 covers the through holes and seals the through holes. One transmission pipeline 72 is arranged in one through hole and in the accommodation space a, so that one end of the transmission pipeline 72 passes through the top plate 12. One end of one transmission pipeline 72 is communicated with one gas ionization mechanism 71, and the other end of one transmission pipeline 72 passes through the chamber wall of the reaction chamber 40 and is located in the cavity b, so that the other end of the transmission pipeline 72 is communicated with the cavity b. The gas ionization mechanism 71 stores oxygen, is used to generate plasma to ionize oxygen, and outputs the ionized oxygen to the cavity b through the transmission pipeline 72. Among them, the gas ionization mechanism 71 can be an Electron Cyclotron Resonance (ECR) plasma device, or a thermionic ionization device, a laser ionization device, a radiation ionization device, a collision ionization device, etc. The present application does not make specific limitations on this.

[0055] In other embodiments, the number of the oxygen supply components 70 can be one. The oxygen supply component 70 includes one gas ionization mechanism 71 and a plurality of transmission pipelines 72. One gas ionization mechanism 71 is respectively communicated with each cavity b through a plurality of transmission pipelines 72, that is, one gas ionization mechanism 71 can independently output ionized oxygen to any number of cavities b.

[0056] In the embodiment of the present application, the number of the heating elements 80 is the same as the number of the cavities b. At least one heating element 80 is arranged in each cavity b. The heating element 80 is located in the cavity b and is connected to the surface of the top plate 12. The heating element 80 is a halogen lamp heater, and is used to emit infrared rays to the substrate 210 located in the cavity b to heat the substrate 210 to a preset temperature. The preset temperature can be understood as: the temperature required to form an oxide layer on the substrate 210.

[0057] In the embodiment of the present application, please refer to Figure 1 、 Figure 2 and Figure 3 , Figure 2 is a schematic diagram of the process of forming a buffer layer and an oxide layer of a piezoelectric thin film by the thin film deposition device provided in the embodiment of the present application, Figure 3Schematic diagram of the process of forming an oxide layer of a piezoelectric thin film by the thin film deposition apparatus provided in the embodiments of the present application. The substrate 210 of the piezoelectric base layer is placed in the cavity b, and the heating element 80 emits infrared rays to the substrate 210 to heat the substrate 210 to a preset temperature. The shutter of the reaction chamber 40 is opened, so that the cavity b is communicated with the accommodation space a, and the raw material gas formed by the vaporization assembly 20 passes through the accommodation space a into the cavity b, and the raw material gas is deposited on the side of the substrate 210 facing the bottom plate 11 to form a transition layer 220. The shutter of the reaction chamber 40 is closed, so that the cavity b is separated from the accommodation space a, and the oxygen supply assembly 70 introduces ionized oxygen into the cavity b. The ionized oxygen is used to oxidize part of the transition layer 220 to form a buffer layer 230 and an oxide layer 240 or to oxidize all of the transition layer 220 to form an oxide layer 240, that is, the ionized oxygen can oxidize part of the transition layer 220 or all of the transition layer 220. The buffer layer 230 is used to avoid lattice mismatch between the substrate 210 and the oxide layer 240.

[0058] It should be noted that depositing on the side of the substrate 210 facing the bottom plate 11 to form the transition layer 220 means: forming the transition layer 220 in the direction of the side of the substrate 210 facing the bottom plate 11. The transition layer 220 can be in direct contact and connection with the substrate 210; the transition layer 220 can also be spaced from the substrate 210, and the layer structure between the transition layer 220 and the substrate 210 connects the transition layer 220 and the substrate 210. For example, Figure 2 In, the transition layer 220 is directly formed on the substrate 210, and the ionized oxygen oxidizes part of the transition layer 220 to form a buffer layer 230 and an oxide layer 240. The molecular structure in the transition layer 220 is consistent with the molecular structure in the buffer layer 230, that is, the difference between the transition layer 220 and the buffer layer 230 is only that: the thickness of the transition layer 220 is greater than the thickness of the buffer layer 230. Another example, Figure 3 The transition layer 220 is directly formed on Figure 2 In the oxide layer 240 in, the ionized oxygen oxidizes all of the transition layer 220 to the oxide layer 240. The oxide layer 240 has a tetragonal structure, and the main crystal directions of the tetragonal system are the 200 direction and the 002 direction. The ratio of the number of tetragonal systems in other crystal directions (excluding the 200 direction and the 002 direction) to the number of tetragonal systems in the 200 direction is less than 5%, or the ratio of the number of tetragonal systems in other crystal directions (excluding the 200 direction and the 002 direction) to the number of tetragonal systems in the 002 direction is less than 5%.

[0059] It can be understood that in the technical solution of the present application, the oxidation transition layer 220 is oxidized in the cavity b to form the oxide layer 240. The raw material gas will not be oxidized in the accommodation space a, and the raw material gas will not form an oxide film on the inner wall of the housing 10. Furthermore, the situation where the oxide film detaches to the crucible 21 and contaminates the raw materials in the crucible 21 will not occur, which is beneficial to improving the quality of the formed oxide layer 240. Moreover, in the prior art, in order to obtain a single-crystalline oxide layer, the deposition rate needs to be sacrificed to obtain a stable and better-quality oxide layer, resulting in a longer time spent on forming the oxide layer. The technical solution of the present application is to first form the transition layer 220, and then oxidize and crystallize the transition layer 220 into the oxide layer 240. Compared with the prior art where the raw material gas is oxidized and then deposited, the technical solution of the present application deposits first and then oxidizes, making the formed oxide layer 240 faster and of better quality. At the same time, in the prior art, when forming oxide films on multiple substrates simultaneously, it is difficult to uniformly oxidize the transition layer on each substrate, resulting in crystallization deviation of the oxide layer. The technical solution of the present application can independently control the connection or disconnection between each reaction chamber 40 and the accommodation space a, that is, it can independently control the oxidation of the transition layer 220 in each reaction chamber 40, which is beneficial to improving the quality of the oxide layer 240 and also beneficial to making the quality of multiple oxide layers 240 more consistent. In summary, the oxide layer 240 formed by the thin film deposition device provided by the present application has better quality, faster formation speed, higher production efficiency, and no deviation in the quality of the oxide layer 240.

[0060] In the embodiment of the present application, the number of reaction chambers 40 can be 2 to 20. For example, 2, 5, 7, 10, 15, 18, 20, or other numbers. The present application does not specifically limit the number of reaction chambers 40. By increasing the number of reaction chambers 40, the production efficiency of the oxide layer 240 can be improved, which is beneficial to cost reduction.

[0061] It can be understood that the solution of the prior art is to oxidize the raw material gas, and while oxidizing the raw material gas, the oxidized raw material gas is deposited on the substrate, resulting in a slower rate of oxidizing the raw material gas and a slower rate of forming the oxide layer 240. The present application provides multiple reaction chambers 40, and the transition layer 220 is simultaneously formed in at least some of the multiple reaction chambers 40. It can also be understood that the vacuum degree condition during deposition is better (because no oxygen is introduced). Then, each reaction chamber 40 is independently controlled, and oxygen is independently introduced into each reaction chamber 40 to oxidize the transition layer 220, so that the rate of depositing the formed transition layer 220 and the rate of oxidizing the transition layer 220 are both faster.

[0062] In the embodiment of the present application, please refer to Figure 1 And Figure 4 , Figure 4 For Figure 1An enlarged schematic view of Structure VI in the thin film deposition apparatus shown. Each reaction chamber 40 includes a first side wall 41, a second side wall 42, and a third side wall 43. The third side wall 43, the second side wall 42, and the first side wall 41 are sequentially arranged along the Y-axis direction, where the Y-axis direction is perpendicular to the X-axis direction. The first side wall 41 is disposed on the surface of the top plate 12 facing the accommodation space a and is fixedly connected to the top plate 12. The second side wall 42 is disposed on the side of the first side wall 41 facing away from the top plate 12 and is detachably connected to the first side wall 41. The third side wall 43 is disposed on the side of the second side wall 42 facing away from the first side wall 41 and is fixedly connected to the second side wall 42. The third side wall 43 extends towards its inner side direction, such that a part of the third side wall 43 protrudes from the inner surface of the second side wall 42 to form a mounting surface 43a, that is, the positive projection of the inner surface of the third side wall 43 on the top plate 12 is located inside the positive projection of the inner surface of the second side wall 42 on the top plate 12. The mounting surface 43a is the surface of the part of the third side wall 43 protruding from the inner surface of the second side wall 42 facing the top plate 12. The hollow part of the first side wall 41 communicates with the hollow part of the second side wall 42, and the hollow part of the second side wall 42 communicates with the hollow part of the third side wall 43. A part of the top plate 12, the first side wall 41, the second side wall 42, and the third side wall 43 enclose a first sub-chamber b1. The first side wall 41 as a whole can be a cylindrical structure, the second side wall 42 as a whole can be a cylindrical structure, and the third side wall 43 as a whole can be an annular structure. Among them, the difference between the cylindrical structure and the annular structure is that: the length of the cylindrical structure is longer, and the length of the annular structure is shorter. A heating element 80 is located in a first sub-chamber b1.

[0063] In the embodiment of the present application, the first side wall 41 is provided with a mounting hole 41a penetrating through the first side wall 41. Each reaction chamber 40 further includes an inner gate valve 45. The inner gate valve 45 is disposed in the mounting hole 41a. The inner gate valve 45 is used to open or close. When the inner gate valve 45 is opened, the first sub-chamber b1 communicates with the accommodation space a, and further, the substrate 210 can enter the first sub-chamber b1 through the inner gate valve 45 or the substrate 210 formed with an oxide layer 240 can leave the first sub-chamber b1 through the inner gate valve 45. When the inner gate valve 45 is closed, the first sub-chamber b1 is separated from the accommodation space a. An opening 5 is formed on the chamber wall of the first sub-chamber b1, such that the first sub-chamber b1 communicates with the accommodation space a.

[0064] Each reaction chamber 40 further includes a plurality of support members 44 located in the first sub-chamber b1. Specifically, five support members 44 are spaced apart on the mounting surface 43a and all extend towards the inner side direction of the third side wall 43, such that a part of each support member 44 corresponds to the hollow part of the third side wall 43, that is, the positive projection of a part of each support member 44 on the top plate 12 is located inside the positive projection of the hollow part of the third side wall 43 on the top plate 12. The substrate 210 is located in the first sub-chamber b1 and is placed on the surface of the five support members 44 facing away from the mounting surface 43a.

[0065] In the embodiments of the present application, please refer to Figure 1 and Figure 4 , each reaction chamber 40 further includes a fourth sidewall 46 and a movable plate 47. The fourth sidewall 46 is disposed on a side of the third sidewall 43 facing away from the first sub-chamber b1, and the position of the fourth sidewall 46 corresponds to the position of the mounting surface 43a, that is, the orthographic projection of the fourth sidewall 46 on the top plate 12 is located within the orthographic projection of the mounting surface 43a on the top plate 12, and the fourth sidewall 46 is detachably connected to the third sidewall 43. The movable plate 47 is a shutter of the reaction chamber 40, and the movable plate 47 is disposed on a side of the fourth sidewall 46 facing away from the third sidewall 43. The hollow part of the third sidewall 43 communicates with the hollow part of the fourth sidewall 46. The third sidewall 43, the fourth sidewall 46 and the movable plate 47 enclose a second sub-chamber b2, that is, the chamber b includes a first sub-chamber b1 and a second sub-chamber b2, and the second sub-chamber b2 communicates with the first sub-chamber b1. The fourth sidewall 46 as a whole can be a cylindrical structure, and the movable plate 47 as a whole can be a plate-like structure. The movable plate 47 can be opened or closed. When the movable plate 47 is opened, the second sub-chamber b2 communicates with the accommodation space a. When the movable plate 47 is closed, the second sub-chamber b2 is partitioned from the accommodation space a. The fourth sidewall 46 is provided with an accommodation hole penetrating through the fourth sidewall 46, and the transfer pipeline 72 passes through the accommodation hole so that a part of the transfer pipeline 72 is located in the second sub-chamber b2, that is, the transfer pipeline 72 passes through the fourth sidewall 46, and the transfer pipeline 72 is respectively communicated with the second sub-chamber b2 and the gas ionization mechanism 71. The gas ionization mechanism 71 outputs ionized oxygen to the second sub-chamber b2 through the transfer pipeline 72.

[0066] In the embodiments of the present application, please refer to Figures 1 to 4 , when the movable plate 47 is opened, the second sub-chamber b2 communicates with the accommodation space a, and the raw material gas formed by the vaporization assembly 20 passes through the accommodation space a into the second sub-chamber b2, and the raw material gas is deposited on a side of the substrate 210 facing the second sub-chamber b2 to form a transition layer 220. When the movable plate 47 is closed, the second sub-chamber b2 is partitioned from the accommodation space a, and the oxygen supply assembly 70 introduces ionized oxygen into the second sub-chamber b2, and the ionized oxygen oxidizes part of the transition layer 220 to form a buffer layer 230 and an oxidation layer 240 or oxidizes all of the transition layer 220 to form an oxidation layer 240.

[0067] In the embodiments of the present application, please refer to Figure 4, each reaction chamber 40 further includes a first sealing element 48, and the first sealing element 48 may be integrally in a ring structure. One end of the first side wall 41 facing away from the top plate 12 is provided with a first accommodation groove 41b. The first sealing element 48 is embedded in the first accommodation groove 41b and fixedly connected to the inner wall of the first accommodation groove 41b. The end face of the first side wall 41 facing away from the top plate 12 is flush with the end face of the first sealing element 48 facing away from the top plate 12. One end of the second side wall 42 facing the first side wall 41 is connected to the first sealing element 48. The first sealing element 48 is used to seal the connection between the first side wall 41 and the second side wall 42. Each reaction chamber 40 further includes a second sealing element 49, and the second sealing element 49 may be integrally in a ring structure. One side of the third side wall 43 facing away from the first sub-chamber b1 is provided with a second accommodation groove 43b. The second sealing element 49 is embedded in the second accommodation groove 43b and fixedly connected to the inner wall of the second accommodation groove 43b. The end face of the third side wall 43 facing away from the second side wall 42 is flush with the surface of the second sealing element 49 facing away from the first sub-chamber b1. One end of the fourth side wall 46 facing the third side wall 43 is fixedly connected to the second sealing element 49. The second sealing element 49 is used to seal the connection between the third side wall 43 and the fourth side wall 46.

[0068] In other embodiments, the first sealing element 48 may extend out of the end face of the first side wall 41 facing away from the top plate 12, that is, a part of the top plate 12, the first side wall 41, a part of the first sealing element 48, the second side wall 42 and the third side wall 43 enclose the first sub-chamber b1. The second sealing element 49 may extend out of the end face of the third side wall 43 facing away from the first sub-chamber b1, that is, the third side wall 43, a part of the second sealing element 49, the fourth side wall 46 and the movable plate 47 enclose the second sub-chamber b2.

[0069] In the embodiments of the present application, please refer to Figure 1 and Figure 5 , Figure 5 is Figure 1 a schematic structural diagram of the thin film deposition apparatus shown along the V-V section. Figure 5 only 4 reaction chambers 40 are shown in Figure 5 , and the number of reaction chambers 40 is not limited to

[0070] In the embodiments of the present application, please refer to Figure 1, the first drive motor 111 is configured to drive a part of the side walls of a plurality of reaction chambers to open or close simultaneously through the first transmission shaft 112 and the first connecting member 113. While driving the first transmission shaft 112 to rotate, the first drive motor 111 drives the first transmission shaft 112 to move along its own axis direction, and the axis direction of the first transmission shaft 112 corresponds to the rotation center line of the first transmission shaft 112. Among them, the axis direction of the first transmission shaft 112 is Figure 1 the up-and-down direction in

[0071] . The first transmission shaft 112 is configured to drive a plurality of second side walls 42 and a plurality of third side walls 43 to rotate together through the first connecting member 113 and drive the plurality of second side walls 42 and the plurality of third side walls 43 to move in the axis direction of the first transmission shaft 112, so that the second side walls 42 are connected to or spaced from the first sealing element 48. Among them, the second side walls 42 are connected to the first sealing element 48 and the third side walls 43 are closed; the second side walls 42 are spaced from the first sealing element 48 and the third side walls 43 are opened. For example, while the first transmission shaft 112 rotates clockwise and moves downward, the first transmission shaft 112 drives a plurality of second side walls 42 and a plurality of third side walls 43 to rotate clockwise around the first transmission shaft 112 and move downward through the first connecting member 113, so that the second side walls 42 are separated from the first sealing element 48, that is, the second side walls 42 are spaced from the first sealing element 48; while the first transmission shaft 112 rotates counterclockwise and moves upward, the first transmission shaft 112 drives a plurality of second side walls 42 and a plurality of third side walls 43 to rotate counterclockwise around the first transmission shaft 112 and move upward through the first connecting member 113, so that the second side walls 42 move to the first sealing element 48, that is, the second side walls 42 are connected to the first side walls 41.

[0072] The second transmission shaft 122 extends to the height where the movable plate 47 is located in the direction away from the second drive motor 121. The second connecting member 123 is disposed in the direction of the second transmission shaft 122 facing the movable plate 47, and the opposite ends of the second connecting member 123 are respectively fixedly connected to the movable plate 47 and the end of the second transmission shaft 122 away from the second drive motor 121.

[0073] In the embodiment of the present application, please refer to Figure 1 and Figure 4, the second drive motor 121 is used to drive the movable plate 47 to open or close through the second transmission shaft 122 and the second connecting member 123. While the second drive motor 121 drives the second transmission shaft 122 to rotate, it also drives the second transmission shaft 122 to move along its own axis direction, and the axis direction of the second transmission shaft 122 corresponds to the rotation center line of the second transmission shaft 122. Among them, the axis direction of the second transmission shaft 122 is Figure 1 the up and down direction in Figure 6 and Figure 7 . Figure 6 For Figure 1 the structural schematic diagram of the reaction chamber and the accommodation space of the thin film deposition device shown in Figure 7 , that is, the movable plate 47 is closed, Figure 1 and for Figure 4 the structural schematic diagram of the reaction chamber and the accommodation space of the thin film deposition device shown in Figure 6 , that is, the movable plate 47 is open. The second transmission shaft 122 is used to drive the movable plate 47 to rotate through the second connecting member 123 and at the same time drive the movable plate 47 to move in the axis direction of the second transmission shaft 122, so that the movable plate 47 is connected to or spaced from the fourth side wall 46. For example, please refer to Figure 4 and Figure 7 together. When the second transmission shaft 122 rotates counterclockwise and moves upward at the same time, the second transmission shaft 122 drives the movable plate 47 to rotate counterclockwise around the second transmission shaft 122 and move upward through the second connecting member 123, so that the movable plate 47 moves to the second sealing element 49, that is, the movable plate 47 is connected to the second sealing element 49. Please refer to Figure 4 and Figure 7 together. When the second transmission shaft 122 rotates clockwise and moves downward at the same time, the second transmission shaft 122 drives the movable plate 47 to rotate clockwise around the second transmission shaft 122 and move downward through the second connecting member 123, so that the movable plate 47 disengages from the second sealing element 49, that is, the movable plate 47 is spaced from the second sealing element 49.

[0074] It can be understood that the raw material gas will also form a film layer on the inner wall of the reaction chamber 40. The second drive motor 121 drives the movable plate 47 to disengage from the fourth side wall 46 through the second transmission shaft 122 and the second connecting member 123, which is convenient for cleaning the film layer on the inner wall of the third side wall 43, the film layer on the inner wall of the fourth side wall 46 and the film layer on the movable plate 47.

[0075] It should be noted that the above terms related to directions such as "clockwise", "counterclockwise", "up", and "down" are only for reference in the attached Figure 1The directions shown. Therefore, the directional terms used are for better and clearer illustration and understanding of this application, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus should not be construed as a limitation to this application.

[0076] In an embodiment of this application, please refer to Figures 5 to 7 , the thin film deposition device 1 further includes a plurality of connecting plates 140. Specifically, four connecting plates 140 are disposed in the accommodating space a and are arranged around the circumference of the first connecting member 113, and the four connecting plates 140 are spaced apart from each other. One connecting plate 140 is disposed between two adjacent third side walls 43 and is fixedly connected to each of the connecting plates 140.

[0077] In an embodiment of this application, the plurality of second side walls 42, the plurality of third side walls 43, and the first connecting member 113 are all integrally formed with the connecting plate 140, and the movable plate 47 is integrally formed with the connected second connecting member 123.

[0078] In an embodiment of this application, the materials of the first side wall 41, the first transmission shaft 112, and the second transmission shaft 122 all include stainless steel, the materials of the second side walls 42, the first connecting member 113, and the movable plate 47 all include molybdenum metal, the material of the support member 44 includes quartz, and the materials of the first sealing element 48 and the second sealing element both include Inconel alloy.

[0079] Based on the same inventive concept, an embodiment of this application also provides a thin film deposition method. The thin film deposition method is applied to the above-mentioned thin film deposition device. For the description of the same parts between the thin film deposition method and the thin film deposition device, please refer to the description of the thin film deposition device in the above embodiment, which will not be repeated here. Please refer to Figure 8 , Figure 8 is a schematic flow chart of the piezoelectric thin film deposition method of an embodiment of this application. The thin film deposition method may include the following steps.

[0080] S10: Place the substrate 210 in the cavity b, adjust the pressure in the accommodating space a to a preset pressure value, adjust the pressure of the cavity b to a predetermined pressure value, and heat the temperature of the substrate 210 to a preset temperature.

[0081] Specifically, open the outer gate valve 15 and the inner gate valve 45. The manipulator transports the substrate 210 and places the substrate 210 on the five support members 44 in the first sub-chamber b1 through the outer gate valve 15 and the inner gate valve 45. Close the outer gate valve 15 and the inner gate valve 45. The first air extraction assembly 30 extracts the gas in the accommodation space a and adjusts the pressure in the accommodation space a to a preset pressure value. The second air extraction assembly 50 extracts the gas in the first sub-chamber b1 and the gas in the second sub-chamber b2 and adjusts the pressure in the first sub-chamber b1 and the pressure in the second sub-chamber b2 to a predetermined pressure value. The heating element 80 heats the substrate 210 to a preset temperature. Wherein, the preset pressure value and the predetermined pressure value are both less than 10E-3 Pa, and the unit of pressure is Pascal, and the symbol is Pa.

[0082] S20. Open the shutter of the reaction chamber 40 to form a raw material gas. The raw material gas passes through the accommodation space a to the chamber b, and the raw material gas is deposited on the surface of the substrate 210 facing the shutter to form a transition layer 220.

[0083] Specifically, the second driving motor 121 opens the shutter (the movable plate 47) of the reaction chamber 40 through the second transmission shaft 122 and the second connecting member 123. The gasification assembly 20 forms a raw material gas from the raw materials. The raw material gas passes through the accommodation space a to the second sub-chamber b2. Please refer to Figure 9 , Figure 9 which is a schematic structural diagram corresponding to step S20 of the thin film deposition method of the embodiment of the present application. The raw material gas is deposited on the surface of the substrate 210 facing the shutter. After the first preset time, a transition layer 220 is formed on the surface of the substrate 210 facing the shutter.

[0084] S30. Close the shutter of the reaction chamber 40 and introduce ionized oxygen into the chamber b. The ionized oxygen oxidizes part of the transition layer 220 to form a buffer layer 230 and an oxide layer 240. Wherein, the substrate 210, the buffer layer 230 and the oxide layer 240 are sequentially stacked.

[0085] Specifically, the second driving motor 121 closes the shutter (the movable plate 47) of the reaction chamber 40 through the second transmission shaft 122 and the second connecting member 123. Please refer to Figure 10 , Figure 10 which is a schematic structural diagram corresponding to step S30 of the thin film deposition method of the embodiment of the present application. The oxygen supply assembly 70 introduces ionized oxygen into the second sub-chamber b. After the second preset time, the ionized oxygen oxidizes part of the transition layer 220 to form a buffer layer 230 and an oxide layer 240. Wherein, the buffer layer 230 is located on one surface of the substrate 210, and the oxide layer 240 is located on the surface of the buffer layer 230 facing away from the substrate 210.

[0086] In step S30, the pressures in the first sub-chamber b1 and the second sub-chamber b2 are from 10E-1 Pa to 10E+2 Pa, and the pressure in the accommodation space a is less than 10E-3 Pa. After step S30 ends, since ionized oxygen is introduced into the chamber b, the pressure in the chamber b increases. The gas in the first sub-chamber b1 and the gas in the second sub-chamber b2 are extracted by the second air extraction component 50, and the pressures in the first sub-chamber b1 and the second sub-chamber b2 are readjusted to the predetermined pressure values again.

[0087] S40: Open the shutter of the reaction chamber 40 to form a raw material gas. The raw material gas passes through the accommodation space a to the chamber b, and the raw material gas is deposited on the surface of the oxide layer 240 facing away from the buffer layer 230 to form a transition layer 220.

[0088] Specifically, the pressures in the first sub-chamber b1 and the second sub-chamber b2 are adjusted to 10E-3 Pa. The second driving motor 121 opens the shutter (the movable plate 47) of the reaction chamber 40 through the second transmission shaft 122 and the second connecting member 123. The gasification component 20 forms a raw material gas from the raw materials. The raw material gas passes through the accommodation space a to the second sub-chamber b2. Please refer to Figure 11 , Figure 11 which is a schematic structural diagram corresponding to step S40 of the thin film deposition method according to the embodiment of the present application. The raw material gas is deposited on the surface of the oxide layer 240 facing away from the buffer layer 230. After a third preset time, a transition layer 220 is formed on the surface of the oxide layer 240 facing away from the buffer layer 230.

[0089] S50: Close the shutter of the reaction chamber 40, and introduce ionized oxygen into the chamber b. The ionized oxygen oxidizes all the transition layers 220 to form the oxide layer 240.

[0090] Specifically, the second driving motor 121 closes the shutter (the movable plate 47) of the reaction chamber 40 through the second transmission shaft 122 and the second connecting member 123. Please refer to Figure 12 , Figure 12It is a schematic structural diagram corresponding to step S50 of the thin film deposition method according to an embodiment of the present application. The oxygen supply component 70 introduces ionized oxygen into the second sub-chamber b. After a fourth preset time, the ionized oxygen oxidizes the entire transition layer 220 to form an oxide layer 240. Among them, the oxide layer 240 formed in step S50 is located on the surface of the oxide layer 240 formed in step S30 facing away from the buffer layer 230. After step S50 ends, the gas in the first sub-chamber b1 and the gas in the second sub-chamber b2 are pumped out by the second pumping component 50, and the pressures in the first sub-chamber b1 and the second sub-chamber b2 are readjusted to a predetermined pressure value again. The outer gate valve 15 and the inner gate valve 45 are opened, and the manipulator transports the substrate 210 formed with the oxide layer 240 and transports the substrate 210 formed with the oxide layer 240 out of the thin film deposition apparatus 1 through the outer gate valve 15 and the inner gate valve 45.

[0091] It should be noted that steps S40 and S50 may not be performed, that is, there is a buffer layer 230 and an oxide layer 240 stacked on the substrate 210. Steps S40 and S50 are performed once, that is, there is a buffer layer 230 and two oxide layers 240 stacked on the substrate 210. Steps S40 and S50 are performed multiple times, that is, there is a buffer layer 230 and more than two oxide layers 240 stacked on the substrate 210. It can be understood that since the ionized oxygen can only penetrate into the transition layer 220 to a predetermined thickness, the thickness of the oxide layer 240 formed by oxidation is also a predetermined thickness. However, the actually required thickness of the oxide layer is greater than the predetermined thickness. Therefore, steps S40 and S50 can be performed once or multiple times to form at least one oxide layer 240, so that the sum of the thicknesses of the oxide layer 240 formed in step S50 and the oxide layer 240 formed in step S30 meets the actually required thickness.

[0092] It can be understood that the thin film deposition method provided by the present application oxidizes the transition layer 220 in the chamber b, and the raw material gas will not be oxidized in the accommodation space a. The raw material gas will not form an oxide film on the inner wall of the housing 10, and further, the situation where the oxide film detaches to the crucible 21 and contaminates the raw materials in the crucible 21 will not occur, which is beneficial to improving the quality of the formed oxide layer 240. The thin film deposition method provided by the present application can separately control the connection or disconnection between each reaction chamber 40 and the accommodation space a, that is, the oxidation condition of the transition layer 220 in each reaction chamber 40 can be separately controlled, which is beneficial to improving the quality of the oxide layer 240 and also beneficial to making the quality of multiple oxide layers 240 more consistent.

[0093] The flowcharts described in this application are merely one example. Without departing from the spirit of this application, various modifications and changes can be made to these diagrams or the steps in this application. For example, these steps can be executed in a different order, or certain steps can be added, deleted, or modified. Those of ordinary skill in the art can understand all or part of the processes of implementing the above embodiments, and the equivalent changes made according to the claims of this application still fall within the scope covered by this application.

[0094] Based on the same inventive concept, an embodiment of this application also provides a base layer 300. Please refer to Figure 13 With Figure 14 , Figure 13 which is the first layer structure schematic diagram of the base layer of the embodiment of this application, Figure 14 and which is the second layer structure schematic diagram of the base layer of the embodiment of this application. The base layer 300 includes a substrate 210, a buffer layer 230, and at least one oxide layer 240 that are sequentially stacked. That is, the buffer layer 230 is disposed on the surface of the substrate 210, and one oxide layer 240 is disposed on the surface of the buffer layer 230 facing away from the substrate 210. A plurality of oxide layers 240 are sequentially stacked in the direction facing away from the buffer layer 230. Figure 13 The shown base layer 300 includes one oxide layer 240, Figure 14 and the described base layer 300 includes two oxide layers 240. Both the buffer layer 230 and at least one oxide layer 240 are formed by the above thin film deposition device or by the above thin film deposition method. The buffer layer 230 is used to avoid lattice mismatch between the oxide layer 240 and the substrate 210, which is beneficial to improving the quality of the formed oxide layer 240.

[0095] In the embodiment of this application, the material of the buffer layer 230 includes zirconium metal, yttrium metal, hafnium metal, or other metal materials, etc. This application does not make specific limitations on this. The material of the oxide layer 240 includes zirconium oxide (ZrO2), yttrium oxide (Y2O3), hafnium oxide (HfO2), or other metal oxide materials. This application does not make specific limitations on this.

[0096] It should be understood that the application of this application is not limited to the above examples. For those of ordinary skill in the art, improvements or transformations can be made according to the above description. All such improvements and transformations should fall within the protection scope of the claims attached to this application. Those of ordinary skill in the art can understand all or part of the processes of implementing the above embodiments, and the equivalent changes made according to the claims of this application still fall within the scope covered by this application.

Claims

1. A thin film deposition apparatus for forming an oxide layer on a substrate of a piezoelectric thin film, characterized in that, The thin film deposition device comprises: A housing, the housing comprising a bottom plate, a top plate and a side plate, the bottom plate and the top plate are opposite to each other and spaced apart, the side plate is connected between the bottom plate and the top plate, and the bottom plate, the top plate and the side plate enclose a containing space; A gasification component, the gasification component is disposed in the accommodating space and is located on a surface of the bottom plate facing the top plate; A plurality of reaction chambers, wherein the plurality of reaction chambers are arranged in the accommodating space and located on the top plate, each of the reaction chambers and a portion of the top plate form a cavity, and the cavity is used to arrange the substrate; A plurality of oxygen supply components, each of which is connected to one of the cavities, and is used to provide oxygen to the cavity; Each reaction chamber has a gate, and when the gate is opened, the cavity is connected to the accommodating space, the raw material gas in the accommodating space enters the cavity, and the raw material gas is sealed in the cavity, and the oxygen supply component provides oxygen for the cavity.

2. The thin film deposition apparatus according to claim 1, wherein The cavity includes a first sub-cavity, and each of the reaction chambers also includes a plurality of support members, which are connected to the cavity wall of the first sub-cavity and are located in the first sub-cavity. The cavity wall of the first sub-cavity is provided with an opening so that the first sub-cavity is connected to the accommodating space, and the support members are used to support the substrate.

3. The thin film deposition apparatus according to claim 2, wherein Each of the reaction chambers further includes an inner gate valve. A mounting hole is provided on the cavity wall of the first sub-cavity. The inner gate valve is arranged in the mounting hole. When the inner gate valve is opened, the first sub-cavity is connected to the accommodating space. When the inner gate valve is closed, the first sub-cavity is separated from the accommodating space.

4. The thin film deposition apparatus according to claim 2, wherein, The cavity also includes a second sub-cavity, which is connected to and can communicate with the first sub-cavity. Each of the reaction chambers also includes a movable plate, which is closed to separate the second sub-cavity from the accommodating space, or the movable plate is opened to communicate with the second sub-cavity and the accommodating space.

5. The thin film deposition apparatus according to claim 4, wherein, Each reaction chamber comprises a first side wall, a second side wall, a third side wall and a fourth side wall, wherein the first side wall is arranged on the surface of the top plate facing the accommodating space and is fixedly connected to the top plate, the second side wall is arranged on the side of the first side wall facing away from the top plate and is detachably connected to the first side wall, the third side wall is arranged on the side of the second side wall facing away from the first side wall and is fixedly connected to the second side wall, the fourth side wall is arranged on the side of the third side wall facing away from the second side wall and is detachably connected to the third side wall, the first side wall, the second side wall and the third side wall enclose the first sub-cavity, and the third side wall, the fourth side wall and the movable plate enclose the second sub-cavity; Each of the reaction chambers further comprises a first sealing element, a first containing groove is formed at one end of the first side wall facing away from the top plate, the first sealing element is embedded in the first containing groove, and the first sealing element is sealed at the connection between the first side wall and the second side wall; Each of the reaction chambers further includes a second sealing element. A second accommodation groove is formed on a side of the third sidewall facing away from the first sub-chamber. The second sealing element is embedded in the second accommodation groove, and the second sealing element seals the connection between the third sidewall and the fourth sidewall.

6. The thin film deposition apparatus according to claim 4, wherein Each of the oxygen supply assemblies includes a gas ionization mechanism and a transmission pipeline. The gas ionization mechanism is disposed outside the housing, and the transmission pipeline communicates the gas ionization mechanism with the second sub-chamber.

7. The thin film deposition apparatus according to any one of claims 2-6, characterized in that, The thin film deposition apparatus further includes a plurality of heating elements. Each of the heating elements is disposed in the first sub-chamber, and the heating element is configured to emit infrared rays into the first sub-chamber.

8. The thin film deposition apparatus according to any one of claims 2-6, characterized in that, The thin film deposition apparatus further includes a first driving assembly. The first driving assembly includes a first driving motor, a first transmission shaft, and a first connecting member. The first driving motor is disposed outside the housing. The first transmission shaft is located in the accommodation space, and the first transmission shaft is in transmission connection with the first driving motor. The first connecting member is disposed at an end of the first transmission shaft facing away from the first driving motor and is fixedly connected to the first driving motor. A plurality of the reaction chambers are disposed on the periphery of the first connecting member and are fixedly connected to the first connecting member. The first driving motor drives a part of the sidewalls of the plurality of reaction chambers to be opened or closed simultaneously through the first transmission shaft and the first connecting member.

9. The thin film deposition apparatus according to any one of claims 4-6, characterized in that, The thin film deposition apparatus further includes a second driving assembly. The second driving assembly includes a second driving motor, a second transmission shaft, and a second connecting member. The second driving motor is disposed outside the housing. The second transmission shaft is disposed in the accommodation space. The second transmission shaft is in transmission connection with the second driving motor. The second connecting member is disposed in a direction facing the reaction chamber, and opposite ends of the second connecting member are respectively fixedly connected to the movable plate and an end of the second transmission shaft facing away from the second driving motor. The second driving motor drives the movable plate to be opened or closed through the second transmission shaft and the second connecting member.

10. The thin film deposition apparatus according to any one of claims 1-6, characterized in that, The vaporization assembly includes a crucible and an electron gun. Both the crucible and the electron gun are disposed in the accommodation space. The crucible is configured to contain raw materials for the oxide layer, and the electron gun is configured to emit an electron beam to the raw materials to form the raw material gas.

11. The thin film deposition apparatus according to any one of claims 1-6, characterized in that, The thin film deposition apparatus further includes a first air extraction assembly. The first air extraction assembly includes a first vacuum pump and a first air extraction pipeline. The first vacuum pump is disposed outside the housing, and a part of the first air extraction pipeline extends into the accommodation space. One end of the first air extraction pipeline is in communication with the first vacuum pump.

12. The thin film deposition apparatus according to any one of claims 1-6, characterized in that, The thin film deposition apparatus further includes a second air extraction assembly. The second air extraction assembly includes a second vacuum pump and a second air extraction pipeline. The second vacuum pump is disposed outside the housing, and a part of the second air extraction pipeline extends into the chamber. One end of the second air extraction pipeline is in communication with the second vacuum pump.

13. A thin film deposition method, characterized in that, Applied to the thin film deposition apparatus according to any one of claims 1-12, the thin film deposition method includes: Place the substrate in the cavity, adjust the pressure in the accommodation space to a preset pressure value, adjust the pressure of the cavity to a predetermined pressure value, and heat the temperature of the substrate to a preset temperature; Open the shutter of the reaction chamber to form a raw material gas. The raw material gas passes through the accommodation space to the cavity, and the raw material gas is deposited on the surface of the substrate facing the shutter to form a transition layer; Close the shutter of the reaction chamber, introduce ionized oxygen into the cavity, and the ionized oxygen oxidizes part of the transition layer to form a buffer layer and an oxide layer, wherein the substrate, the buffer layer, and the oxide layer are stacked in sequence.

14. The thin film deposition method according to claim 13, wherein The thin film deposition method further includes: Open the shutter of the reaction chamber to form the raw material gas. The raw material gas passes through the accommodation space to the cavity, and the raw material gas is deposited on the surface of the oxide layer facing away from the buffer layer to form a transition layer; Close the shutter of the reaction chamber and introduce ionized oxygen into the cavity. The ionized oxygen oxidizes all of the transition layer to form an oxide layer.

15. A base layer, characterized in that, Comprising a substrate, a buffer layer, and at least one oxide layer stacked, wherein the buffer layer and at least one of the oxide layers are both formed by the thin film deposition apparatus according to any one of claims 1-12 or are both formed by the thin film deposition method according to any one of claims 13-14.

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