Wafer thickness detection equipment

Abstract

The invention provides wafer thickness detection equipment, and belongs to the technical field of semiconductor production. Comprising a body; the shell (1) is arranged on the body, a containing space is formed in the shell (1), an opening is formed in the shell (1), the containing space is communicated with the exterior of the shell (1) through the opening, a limiting assembly (101) is arranged on the inner wall of the shell (1), and the limiting assembly (101) is used for fixing a wafer to be tested; the door body (2) is connected with the shell (1), and the door body (2) is used for closing or exposing the opening; the temperature adjusting mechanism (3) is connected with the shell (1), and the temperature adjusting mechanism (3) is used for adjusting the temperature in the containing space; and the measuring mechanism (4) is used for measuring the thickness of the wafer to be measured. According to the technical scheme, the thickness of the wafer can be accurately detected.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor production, and particularly relates to a wafer thickness detection device. Background Art

[0002] In the technical field of semiconductor production, the thickness of a wafer is a key parameter for evaluating the quality of the wafer.

[0003] However, current measurement techniques for wafer thickness still have limitations. It is difficult to obtain accurate wafer thickness data, the measurement error is relatively large, and it is difficult to meet the detection requirements. Summary of the Invention

[0004] The present invention provides a wafer thickness detection device that can accurately detect the thickness of a wafer.

[0005] To achieve the above object, the technical solution adopted in the embodiments of the present invention is:

[0006] A wafer thickness detection device includes:

[0007] A main body;

[0008] A housing disposed on the main body. An accommodation space is provided inside the housing. An opening is provided on the housing, and the opening communicates the accommodation space with the outside of the housing. A limiting component is provided on the inner wall of the housing, and the limiting component is used to fix the wafer to be measured;

[0009] A door body connected to the housing, and the door body is used to close or expose the opening;

[0010] A temperature adjustment mechanism connected to the housing, and the temperature adjustment mechanism is used to adjust the temperature inside the accommodation space;

[0011] A measurement mechanism for measuring the thickness of the wafer to be measured.

[0012] In some embodiments, the measurement mechanism includes:

[0013] Two capacitance sensors parallel to each other, disposed on the inner wall of the housing. Among them, the wafer to be measured is located between the two capacitance sensors;

[0014] A first controller connected to the capacitance sensors, and the first controller is used to: obtain a first signal output by the capacitance sensors, and calculate the thickness of the wafer to be measured according to the first signal.

[0015] In some embodiments, a first air inlet and a first air outlet are respectively provided on the housing, and the first air outlet communicates the accommodation space with the outside of the housing;

[0016] A second air outlet is provided on the temperature adjustment mechanism;

[0017] Wherein, a pipeline is connected between the first air inlet and the second air outlet, the pipeline communicates the accommodation space and the temperature adjustment mechanism, and the temperature adjustment mechanism is used to convey gas with a preset temperature into the accommodation space.

[0018] In some embodiments, a filter screen is arranged in the temperature adjustment mechanism, and the filter screen is used to filter moisture in the gas.

[0019] In some embodiments, it further includes:

[0020] A second controller, connected to the temperature adjustment mechanism;

[0021] Wherein, a temperature sensor is arranged in the housing, the temperature sensor is connected to the second controller, and the temperature sensor is used to detect the temperature inside the housing;

[0022] The second controller is used to: obtain a second signal output by the temperature sensor, and according to the second signal, control the speed at which the temperature adjustment mechanism conveys the gas into the accommodation space, and / or according to the second signal, control the temperature of the gas.

[0023] In some embodiments, the number of the temperature sensors is greater than or equal to.

[0024] In some embodiments, it further includes:

[0025] Two mutually parallel guide rails are arranged on the housing and are respectively located on both sides of the opening;

[0026] Wherein, a slider is arranged on each of the guide rails, and the slider is connected to the door body.

[0027] In some embodiments, it further includes:

[0028] A driving mechanism, connected to the door body, and the driving mechanism is used to drive the door body to move along the guide rail to close or expose the opening.

[0029] In some embodiments, the driving mechanism includes:

[0030] A cylinder barrel, arranged on the body;

[0031] A piston, arranged in the cylinder barrel;

[0032] A piston rod, the first end of the piston rod is connected to the piston, and the second end of the piston rod is connected to the door body;

[0033] When the piston moves in the cylinder barrel, it drives the piston rod to make a telescopic motion relative to the cylinder barrel, so as to drive the door body to close or expose the opening.

[0034] In some embodiments, the limiting component includes:

[0035] A first limiting portion and a second limiting portion, the first limiting portion is arranged on the first side wall of the housing, and the second limiting portion is arranged on the second side wall of the housing, wherein the first side wall and the second side wall are two opposite side walls.

[0036] The beneficial effects of the present invention are:

[0037] In this embodiment, the temperature of the housing 1 can be controlled by the temperature adjustment mechanism, ensuring that the temperature during the thickness measurement process is controllable, avoiding the problem of inaccurate wafer thickness measurement caused by temperature changes, and effectively improving the accuracy of wafer thickness measurement. Description of the Drawings

[0038] Figure 1 Schematic diagram of the overall structure of the wafer thickness detection device according to the embodiment of the present invention;

[0039] Figure 2 Schematic diagram of the state when the door body of the wafer thickness detection device according to the embodiment of the present invention is opened;

[0040] Figure 3 Schematic diagram of the state when a wafer is placed in the wafer thickness detection device according to the embodiment of the present invention;

[0041] Figure 4 Schematic diagram of the state when the door body of the wafer thickness detection device according to the embodiment of the present invention is closed. Detailed Embodiments

[0042] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the described embodiments of the present invention fall within the scope of protection of the present invention.

[0043] To solve the above technical problems, an embodiment of the present invention provides a wafer thickness detection device that can accurately detect the thickness of a wafer.

[0044] As Figure 1 shown, an embodiment of the present invention provides a wafer thickness detection device, including:

[0045] The main body, the housing 1, the door body 2, the temperature adjustment mechanism 3 and the measurement mechanism 4.

[0046] Among them, the housing 1 is arranged on the main body. An accommodation space is provided inside the housing 1. An opening is provided on the housing 1, and the opening communicates the accommodation space with the outside of the housing 1. A limiting component 101 is arranged on the inner wall of the housing 1, and the limiting component 101 is used to fix the wafer to be measured.

[0047] It should be noted that the temperature in the accommodation space will affect the measurement accuracy of the thickness of the wafer to be measured. For example, since the silicon material will thermally expand or contract when the temperature changes, the temperature in the accommodation space may cause a deviation in the measured thickness. For another example, the performance of the measurement mechanism 4 may also be affected by the temperature, resulting in inaccurate measurement results.

[0048] In the embodiment of the present invention, the housing 1 may specifically include an outer wall and an inner wall. Heat-insulating materials may be filled between the outer wall and the inner wall to reduce the temperature change in the accommodation space and avoid the problem of inaccurate measurement of the wafer thickness caused by temperature change.

[0049] The door body 2 is connected to the housing 1, and the door body 2 is used to close or expose the opening.

[0050] It should be noted that by setting the door body 2, the opening can be closed when the measurement mechanism 4 measures the thickness of the wafer to be measured. In this way, it can be ensured that the accommodation space is in a closed state during the thickness measurement process, thereby reducing the temperature change in the accommodation space.

[0051] The temperature adjustment mechanism 3 is connected to the housing 1, and the temperature adjustment mechanism 3 is used to adjust the temperature in the accommodation space.

[0052] It should be noted that in the embodiment of the present invention, the temperature in the accommodation space can be adjusted by setting the temperature adjustment mechanism 3 to ensure the ambient temperature during thickness measurement, thereby ensuring the accuracy of wafer thickness measurement.

[0053] The measurement mechanism 4 is used to measure the thickness of the wafer to be measured.

[0054] In this embodiment, the temperature in the housing 1 can be controlled by the temperature adjustment mechanism, ensuring that the temperature during the thickness measurement process is controllable, avoiding the problem of inaccurate measurement of the wafer thickness caused by temperature change, and effectively improving the measurement accuracy of the wafer thickness.

[0055] In some embodiments, the measurement mechanism 4 includes: a first controller and two capacitance sensors.

[0056] Among them, two mutually parallel capacitance sensors are arranged on the inner wall of the housing 1, and the wafer to be measured is located between the two capacitance sensors.

[0057] A first controller, connected to the capacitance sensor, is configured to: obtain a first signal output by the capacitance sensor, and calculate the thickness of the wafer to be measured based on the first signal.

[0058] It should be noted that the capacitance sensor may specifically be a parallel plate capacitance sensor for single-point detection of the wafer to be measured. Here, the first signal may specifically be the voltage change value or capacitance change value of the capacitor formed by two capacitance sensors, and the first controller can calculate the thickness of the wafer to be measured based on this.

[0059] In some embodiments, a first air inlet and a first air outlet are respectively formed on the housing 1, and the first air outlet communicates the accommodation space with the outside of the housing 1; a second air outlet is formed on the temperature adjustment mechanism 3; wherein, a pipeline 5 is connected between the first air inlet and the second air outlet, and the pipeline 5 communicates the accommodation space and the temperature adjustment mechanism 3, and the temperature adjustment mechanism 3 is configured to deliver gas with a preset temperature into the accommodation space.

[0060] In addition, a pipeline 9 may also be connected to the first air outlet on the housing 1 so as to discharge the gas to other spaces (such as outdoors) through the pipeline 9. It should be noted that the pipeline 5 and the pipeline 9 may specifically adopt transparent hoses.

[0061] In some embodiments, a filter screen 301 is provided inside the temperature adjustment mechanism 3, and the filter screen 301 is configured to filter moisture in the gas.

[0062] It should be noted that by filtering moisture in the gas through the filter screen 301, the dryness of the gas blown into the accommodation space can be ensured, thereby ensuring the temperature adjustment effect in the accommodation space.

[0063] In some embodiments, it further includes: a second controller, connected to the temperature adjustment mechanism 3; wherein, a temperature sensor 6 is provided inside the housing 1, and the temperature sensor 6 is connected to the second controller, and the temperature sensor 6 is configured to detect the temperature inside the housing 1; the second controller is configured to: obtain a second signal output by the temperature sensor 6, and control the speed at which the temperature adjustment mechanism 3 delivers the gas into the accommodation space according to the second signal, and / or control the temperature of the gas according to the second signal.

[0064] That is to say, the second controller can adjust the air outlet temperature and air outlet speed of the temperature adjustment mechanism 3 in real time according to the temperature values measured by multiple temperature sensors 6.

[0065] In some embodiments, the number of the temperature sensors 6 is greater than or equal to 2.

[0066] It should be noted that, as Figure 1 shown, to ensure the accuracy of temperature detection in the accommodation space, temperature sensors 6 can be respectively placed at multiple key positions (such as near the first air inlet and the first air outlet, and near the wafer to be measured). In this way, according to the temperature values detected by the temperature sensors 6, it can be judged whether the temperature in the accommodation space meets the requirements for wafer thickness measurement. For example, if the temperature values of each temperature sensor 6 are stable and the temperature difference between each temperature value is less than 0.1 °C, it is considered that the temperature in the accommodation space of the housing 1 is uniform and consistent, and the requirements for wafer thickness measurement are met, and the thickness measurement of the wafer to be measured can be started.

[0067] In some embodiments, it further includes: two guide rails 7 that are parallel to each other, are arranged on the housing 1, and are respectively located on both sides of the opening; wherein, a slider is arranged on each of the guide rails 7, and the slider is connected to the door body 2.

[0068] In some embodiments, it further includes: a driving mechanism 8, which is connected to the door body 2, and the driving mechanism 8 is used to drive the door body 2 to move along the guide rail 7 to close or expose the opening.

[0069] In some embodiments, the driving mechanism 8 includes: a cylinder barrel, a piston, and a piston rod. Among them, the cylinder barrel is arranged on the body; the piston is arranged in the cylinder barrel; the piston rod, the first end of the piston rod is connected to the piston, and the second end of the piston rod is connected to the door body; wherein, when the piston moves in the cylinder barrel, it drives the piston rod to do telescopic movement relative to the cylinder barrel, so as to drive the door body 2 to close or expose the opening.

[0070] That is to say, the driving mechanism 8 can specifically be a cylinder, and its working principle can refer to that of a cylinder, which will not be elaborated here. It should be noted that the structure of the driving mechanism 8 in this embodiment is only an optional example, and only the main components of the driving mechanism 8 are described. It can be understood that the specific composition of the driving mechanism 8 is not limited to this example.

[0071] In a specific example, the limiting component 101 includes: a first limiting portion and a second limiting portion, the first limiting portion is arranged on the first side wall of the housing 1, and the second limiting portion is arranged on the second side wall of the housing 1, wherein, the first side wall and the second side wall are two opposite side walls.

[0072] Here, the specific working process of the wafer thickness detection device of the embodiment of the present invention when measuring the wafer thickness is described as follows:

[0073] First, the driving mechanism 8 works to drive the door body 2 to move to expose the opening on the housing 1. After the door body 2 is opened, the state of the wafer thickness detection device is asFigure 2 shown.

[0074] Then, the wafer (i.e. the wafer to be tested) can be placed on the limiting component 101 through the above opening by a robot. Figure 3 As shown, after the wafer is placed, the wafer is located between the two capacitive sensors.

[0075] Afterwards, the driving mechanism 8 works to drive the door body 2 to move to close the opening on the housing 1. After the door body 2 is closed, the state of the wafer thickness detection device is as follows: Figure 4 As shown. After the door body 2 is closed, the second controller can obtain the temperature inside the shell 1 (i.e., inside the accommodating space) detected by each temperature sensor 6, and can also judge whether the temperature inside the accommodating space meets the wafer thickness measurement requirements based on the temperature value detected by the temperature sensor 6. For example, if the temperature values ​​of each temperature sensor 6 are stable, and the temperature difference between each temperature value is less than 0.1°C, it is considered that the temperature in the accommodating space of the shell 1 is uniform and consistent, and the wafer thickness measurement requirements have been met, and the thickness of the wafer to be measured can be measured; if the wafer thickness measurement requirements are not met, the second controller can adjust the air outlet temperature and air outlet speed of the temperature regulating mechanism 3 in real time according to the temperature values ​​measured by the multiple temperature sensors 6, until the temperature values ​​of each temperature sensor 6 are stable, and the temperature difference between each temperature value is less than 0.1°C, the measuring mechanism 4 starts to detect the thickness of the wafer to be measured. Specifically, the first controller of the measuring mechanism 4 can obtain the first signal output by the capacitive sensor, and calculate the thickness of the wafer to be measured based on the first signal.

[0076] Finally, after the wafer thickness detection is completed, the driving mechanism 8 drives the door body 2 to move, exposing the opening of the shell 1 again; the wafer to be tested can be taken out by the Robot; then, the driving mechanism 8 drives to close the door body 2.

[0077] Here, it should be noted that in order to avoid a large temperature difference in the environment where the measuring mechanism 4 is located before and after wafer thickness measurement, it is necessary to ensure that the door body 2 is in a closed state before and after the measuring mechanism 4 works, and the temperature adjustment mechanism 3 can remain in a normally open state.

[0078] In this embodiment, the temperature inside the housing 1 can be controlled by a temperature regulating mechanism to ensure that the temperature during the thickness measurement process is controllable, thereby avoiding the problem of inaccurate wafer thickness measurement due to temperature changes, and effectively improving the accuracy of wafer thickness measurement.

[0079] It should be noted that the embodiments in this specification are all described in a progressive manner. For the same or similar parts among the embodiments, reference can be made to each other, and the key point of each embodiment is to illustrate the differences from other embodiments. In particular, for the [specific embodiment] (the specific content here is not clear from the original text, assuming it's a certain type of embodiment), since it is basically similar to the product embodiment, the description is relatively simple, and for the relevant parts, reference can be made to the corresponding description in the product embodiment.

[0080] Unless otherwise defined, the technical terms or scientific terms used in this disclosure should have the ordinary meanings understood by those of ordinary skill in the art to which this disclosure belongs. The terms "first", "second" and similar words used in this disclosure do not denote any order, quantity or importance, but are only used to distinguish different components. Words such as "comprising" or "including" mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects. Words such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Upper", "lower", "left", "right", etc. are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0081] It can be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element can be "directly" on or under the other element, or there may be intermediate elements.

[0082] In the description of the above embodiments, the specific features, structures, materials or characteristics can be combined in a suitable manner in any one or more embodiments or examples.

[0083] The above is only the specific implementation manner of this disclosure, but the protection scope of this disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by this disclosure can easily think of changes or substitutions, which should all be covered within the protection scope of this disclosure. Therefore, the protection scope of this disclosure should be subject to the protection scope of the claims.

Claims

1. A wafer thickness detection device, characterized in that: include: ontology; A shell (1) is arranged on the body, a housing space is arranged inside the shell (1), an opening is arranged on the shell (1), the opening is connected with the housing space and the outside of the shell (1), and a limit assembly (101) is arranged on the inner wall of the shell (1), and the limit assembly (101) is used to fix the wafer to be tested; A door body (2) connected to the housing (1), the door body (2) being used to close or expose the opening; A temperature regulating mechanism (3) connected to the housing (1), the temperature regulating mechanism (3) being used to regulate the temperature in the accommodating space; The measuring mechanism (4) is used to measure the thickness of the wafer to be measured.

2. The wafer thickness detection device according to claim 1, characterized in that: The measuring mechanism (4) comprises: Two mutually parallel capacitance sensors are arranged on the inner wall of the housing (1), wherein the wafer to be tested is located between the two capacitance sensors; The first controller is connected to the capacitive sensor, and is used to obtain a first signal output by the capacitive sensor, and calculate the thickness of the wafer to be measured according to the first signal.

3. The wafer thickness detection device according to claim 1, characterized in that: The shell (1) is provided with a first air inlet and a first air outlet, respectively, and the first air outlet communicates with the accommodating space and the outside of the shell (1); The temperature regulating mechanism (3) is provided with a second air outlet; A pipe (5) is connected between the first air inlet and the second air outlet, the pipe (5) communicates with the accommodating space and the temperature regulating mechanism (3), and the temperature regulating mechanism (3) is used to transport gas with a preset temperature into the accommodating space.

4. The wafer thickness detection device according to claim 3, characterized in that: A filter screen (301) is provided inside the temperature regulating mechanism (3), and the filter screen (301) is used to filter moisture in the gas.

5. The wafer thickness detection device according to claim 3, characterized in that: Also includes: a second controller connected to the temperature regulating mechanism (3); Wherein, a temperature sensor (6) is arranged in the housing (1), the temperature sensor (6) is connected to the second controller, and the temperature sensor (6) is used to detect the temperature in the housing (1); The second controller is used to obtain a second signal output by the temperature sensor (6), and control the speed at which the temperature regulating mechanism (3) delivers the gas into the accommodating space according to the second signal, and / or control the temperature of the gas according to the second signal.

6. The wafer thickness detection device according to claim 5, characterized in that: The number of the temperature sensors (6) is greater than or equal to 2.

7. The wafer thickness detection device according to claim 1, characterized in that: Also includes: Two mutually parallel guide rails (7) are arranged on the housing (1) and are respectively located on two sides of the opening; Wherein, each guide rail (7) is provided with a sliding block, and the sliding block is connected to the door body (2).

8. The wafer thickness detection device according to claim 7, characterized in that: Also includes: A driving mechanism (8) is connected to the door body (2), and the driving mechanism (8) is used to drive the door body (2) to move along the guide rail (7) to close or expose the opening.

9. The wafer thickness detection device according to claim 8, characterized in that: The driving mechanism (8) comprises: A cylinder barrel, arranged on the body; A piston, disposed in the cylinder barrel; A piston rod, a first end of the piston rod is connected to the piston, and a second end of the piston rod is connected to the door body; When the piston moves in the cylinder barrel, it drives the piston rod to perform telescopic movement relative to the cylinder barrel, thereby driving the door body (2) to close or expose the opening.

10. The wafer thickness detection device according to claim 1, characterized in that: The limiting component (101) comprises: A first limiting portion and a second limiting portion, wherein the first limiting portion is arranged on a first side wall of the shell (1), and the second limiting portion is arranged on a second side wall of the shell (1), wherein the first side wall and the second side wall are two side walls arranged opposite to each other.

Images