Monitoring model and method, wafer processing device and wafer
By replacing the wafer with a monitoring model with the same shape, size, but low hardness as the wafer during semiconductor processing, detecting its defects at the clamping contact point, the problem of lag in the clamping contact point abnormal monitoring in the prior art is solved, and more timely and accurate abnormality detection and processing is achieved.
Patent Information
- Application Number
- CN202510358558.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-25
- Publication Date
- 2025-07-01
AI Technical Summary
During semiconductor processing, abnormalities in the clamping contact point cannot be effectively monitored, resulting in wafer defects. The prior art relies on robotic parameters and particle counter output, and the monitoring effect is lagging.
A monitoring model is provided, which has the same shape and size as the wafer but has a lower hardness than the wafer. By replacing the wafer, it enters the processing process, detects its defects at the clamping contact point, and then determines the abnormal type of the clamping device.
By monitoring the defect detection results of the monitoring model, abnormal phenomena in the wafer processing process can be reflected more realistically and timely, and production capacity can be improved, so as to avoid wafer defects caused by lag monitoring.
Smart Images
Figure CN120233045A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor processing technology, and in particular, to a monitoring model, a method, a wafer processing apparatus, and a wafer. Background Art
[0002] In the field of semiconductor processing, in the wafer production process, many clamping devices such as a robot or an aligner clamp the edge portion of the wafer by a clamping method. Therefore, there are clamping contact points on the edge of the wafer, which may cause defects in the wafer.
[0003] Currently, in the process of wafer processing, there is no practical and effective verification for whether the clamping contact points will cause defects in the wafer and the determination of the defects. It mainly depends on the matching of the parameters of the robot itself and the wafer surface defect image (LLS map) output by a particle counter.
[0004] However, for the problem of whether the hardware of the actual clamping contact points of the clamping device is abnormal, it cannot be intuitively and truly reflected, and it is necessary to perform surface defect detection on the wafer after processing, and the monitoring effect is relatively lagging. Summary of the Invention
[0005] In order to solve at least one of the above-mentioned technical problems in the prior art, the embodiments of the present disclosure provide a monitoring model, a method, a wafer processing apparatus, and a wafer.
[0006] The technical solutions provided by the embodiments of the present disclosure are as follows:
[0007] In a first aspect, the embodiments of the present disclosure provide a monitoring model for replacing a wafer to enter a predetermined wafer processing process for wafer processing monitoring; the monitoring model includes a sheet-shaped body, the sheet-shaped body has the same shape and size as the wafer, and the hardness of the sheet-shaped body is less than the hardness of the wafer.
[0008] Exemplarily, the material of the sheet-shaped body is a non-metallic material.
[0009] In a second aspect, the embodiments of the present disclosure provide a method for monitoring wafer processing, including:
[0010] Providing the monitoring model as described above;
[0011] Before or during the wafer is processed according to the normal wafer processing process, replacing the wafer with the monitoring model and processing it through a predetermined wafer processing process;
[0012] Taking the processed monitoring model as a limit sample for defect detection;
[0013] Based on the defect detection results of the limit samples, determine whether there are any abnormalities and the types of abnormalities in the normal wafer processing process.
[0014] Exemplarily, the substituting the monitoring model for the wafer and entering a predetermined wafer processing process specifically includes:
[0015] When there are multiple wafer clamping devices in the normal wafer processing process, substitute the monitoring model for the wafer and perform multiple processes through the predetermined wafer processing process, where only one target wafer clamping device is included in each predetermined wafer processing process.
[0016] Exemplarily, the determining whether there are any abnormalities and the types of abnormalities in the normal wafer processing process based on the defect detection results of the limit samples specifically includes:
[0017] Obtain the morphological features of the limit samples in the area where the wafer clamping contact points are located;
[0018] Based on the morphological features, determine whether the target wafer clamping device is abnormal and the type of abnormality.
[0019] Exemplarily, the determining whether the target wafer clamping device is abnormal and the type of abnormality based on the morphological features includes:
[0020] When there are abnormal points, lines, or surface scratch defects on the surface of the limit samples in the surrounding area of the wafer clamping contact points, determine that the target wafer clamping device is abnormal, and the type of abnormality includes the presence of foreign objects at the clamping contact points of the target wafer clamping device;
[0021] When the deformation amount of the limit samples at the wafer clamping contact points is greater than the threshold value, determine that the target wafer clamping device is abnormal, and the type of abnormality includes the absence or damage of hardware at the clamping contact points of the target wafer clamping device.
[0022] Exemplarily, the obtaining the morphological features of the limit samples in the area where the wafer clamping contact points are located includes:
[0023] Detect the morphological features of the limit samples in the area where the wafer clamping contact points are located through a microscope.
[0024] In a third aspect, an embodiment of the present disclosure also provides a wafer processing device, including: a processor and a memory; the processor is configured to execute instructions stored in the memory to implement the wafer processing monitoring method as described above.
[0025] In a fourth aspect, an embodiment of the present disclosure also provides a wafer processing method, the method including:
[0026] Before or during the processing of the wafer according to the normal wafer processing procedure, the wafer processing monitoring method described above is used to monitor whether there are any abnormalities and the types of abnormalities in the normal wafer processing procedure;
[0027] Based on the monitoring results, after performing abnormal repair on the normal wafer processing procedure, the wafer is processed according to the normal wafer processing procedure.
[0028] In a fifth aspect, an embodiment of the present disclosure also provides a wafer processed by using the wafer processing method described above. Among the defect detection data at the wafer clamping contact points, there is no defect detection data that conforms to the control rules for controlling contact defects.
[0029] The beneficial effects brought by the embodiments of the present disclosure are as follows:
[0030] In the above solution, a monitoring model is provided. Before or during the normal wafer processing procedure, the monitoring model replaces the wafer and enters the predetermined wafer processing procedure for processing. After that, it is used as a limit sample for defect detection, and based on the defect detection results of the limit sample, it is determined whether there are any abnormalities and the types of abnormalities in the normal wafer processing procedure. Since the shape and size of the monitoring model are the same as those of the wafer, and the hardness of the monitoring model is less than that of the wafer, when contacting the wafer processing equipment, for example, when being clamped by the wafer clamping device, during the picking and placing operation, the monitoring model will deform more significantly compared to the wafer, reflecting a more obvious defect morphology. Therefore, based on the defect detection results of the limit sample after processing the monitoring model, the abnormal phenomena in the normal wafer processing procedure can be analyzed and monitored, which can more truly reflect the abnormalities in the normal wafer processing procedure. In this way, compared with the prior art where defect testing is performed after the wafer has completed all processing procedures, the monitoring results are more real and reliable, and the monitoring effect is more timely, which can improve production capacity. BRIEF DESCRIPTION OF THE DRAWINGS
[0031] Figure 1 It represents a flowchart of the wafer processing monitoring method in an embodiment of the present disclosure. DETAILED DESCRIPTION
[0032] To make the objectives, technical solutions, and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments obtained by those of ordinary skill in the art based on the described embodiments of the present disclosure without creative efforts shall fall within the scope of protection of the present disclosure.
[0033] Unless otherwise defined, technical terms or scientific terms used in this disclosure shall have the ordinary meanings as understood by those of ordinary skill in the art to which this disclosure pertains. The terms "first", "second" and similar terms used in this disclosure do not denote any order, quantity or importance, but are only used to distinguish different components. Similarly, terms such as "a", "an" or "the" do not denote a quantity limitation, but mean that there is at least one. The terms such as "comprising" or "including" mean that the elements or items appearing before this term cover the elements or items listed after this term and their equivalents, without excluding other elements or items. The terms such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms such as "upper", "lower", "left" and "right" are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.
[0034] The features such as "parallel", "perpendicular" and "identical" used in the embodiments of this disclosure include the strict meanings of "parallel", "perpendicular", "identical", etc., as well as the cases with certain tolerances such as "substantially parallel", "substantially perpendicular" and "substantially identical". Considering the measurement and tolerances related to the measurement of specific quantities (for example, the limitations of the measurement system), it means within the acceptable deviation range for a specific value determined by those of ordinary skill in the art. For example, "substantially" can mean within one or more standard deviations, or within 3% or 5% of the value.
[0035] In addition, in this text, unless otherwise defined, the terms "substantially", "essentially", "about" and "approximately" are used to describe and explain small changes. When used with an event or situation, these terms can cover the exact occurrence of the event or situation, or can also cover the approximate occurrence of the event or situation. For example, when used with a numerical value, these terms can include a variation range of less than or equal to 10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, less than or equal to ±0.05%. The term "substantially coplanar" can mean that two surfaces are arranged along the same plane within a micron range, for example, arranged along the same plane within 40μm, 30μm, 20μm, 10μm or 1μm.
[0036] The embodiments of this disclosure provide a monitoring model for replacing a wafer to enter a predetermined wafer processing process for wafer processing monitoring; the monitoring model includes a sheet-shaped body, the sheet-shaped body has the same shape and size as the wafer, and the hardness of the sheet-shaped body is less than the hardness of the wafer.
[0037] The material of the wafer is generally silicon, silicon carbide, etc. In some exemplary embodiments, the material of the sheet-like body may be selected as a non-metallic material with a hardness lower than that of silicon or silicon carbide.
[0038] In addition, as Figure 1 shown, the embodiments of the present disclosure provide a method for monitoring wafer processing, including the following steps:
[0039] Step S01: Provide the monitoring model in the embodiments of the present disclosure;
[0040] Step S02: Before or during the normal wafer processing procedure of the wafer, replace the wafer with the monitoring model and enter the predetermined wafer processing procedure;
[0041] Step S03: Take the processed monitoring model as a limit sample and perform defect detection;
[0042] Step S04: Based on the defect detection result of the limit sample, determine whether there is an abnormality and the type of abnormality in the normal wafer processing procedure.
[0043] In the above solution, a monitoring model is provided. Before or during the normal wafer processing procedure, the monitoring model is used to replace the wafer. After entering the predetermined wafer processing procedure for processing, it is used as a limit sample for defect detection. Based on the defect detection result of the limit sample, it is determined whether there is an abnormality and the type of abnormality in the normal wafer processing procedure.
[0044] Since the shape and size of the monitoring model are the same as those of the wafer, and the hardness of the monitoring model is less than that of the wafer, when contacting the wafer processing equipment, for example, when being clamped by the wafer clamping device, during the picking and placing operation, the monitoring model will deform more significantly compared with the wafer, reflecting a more obvious defect morphology. Therefore, based on the defect detection result of the limit sample after processing the monitoring model, the abnormal phenomena in the normal wafer processing procedure can be analyzed and monitored, which can more truly reflect the abnormality in the normal wafer processing procedure. In this way, compared with the prior art in which defect testing is performed after the wafer has completed all processing procedures, the monitoring result is more real and reliable, and the monitoring effect is more timely, which can improve the production capacity.
[0045] It should be noted that in the above step S02, before or during the normal wafer processing procedure of the wafer, the monitoring model replaces the wafer and enters the predetermined wafer processing procedure for processing; specifically, it may refer to using the monitoring model to replace the wafer in the regular PM (Preventive Maintenance) or BM (Predictive Maintenance) of the wafer processing equipment to enter the predetermined wafer processing procedure for monitoring processing anomalies.
[0046] In some exemplary embodiments, the above step S02 specifically includes:
[0047] When there are multiple wafer clamping devices in the normal wafer processing procedure, the monitoring model replaces the wafer and undergoes multiple processes through the predetermined wafer processing procedure, where each time the predetermined wafer processing procedure only includes one target wafer clamping device.
[0048] With the above solution, it is possible to alternatively monitor whether there is equipment abnormality in one wafer clamping device in the wafer processing procedure.
[0049] The target wafer clamping device refers to one wafer clamping device to be analyzed for abnormalities.
[0050] Taking the final sorter of the wafer as an example, the wafer clamping devices in the final sorter include a robot and an aligner. When it is necessary to monitor whether there are abnormalities at the clamping contact points of the robot, after the operator confirms that there are no abnormalities in the equipment hardware of the final sorter, the setting parameters (setting Recipe) of the wafer processing equipment can be adjusted, that is, set to the preset wafer processing procedure, skip the aligner, and make the monitoring model only pass through the robot. Use the monitoring model to go through the preset wafer processing procedure multiple times to obtain the limit sample.
[0051] Similarly, when it is necessary to monitor whether there are abnormalities at the clamping contact points of the aligner, after the operator confirms that there are no abnormalities in the equipment hardware of the final sorter, the setting parameters (setting Recipe) of the wafer processing equipment can be adjusted, that is, set to the preset wafer processing procedure, skip the robot, and make the monitoring model only pass through the aligner. Use the monitoring model to go through the preset wafer processing procedure multiple times to obtain the limit sample.
[0052] In some exemplary embodiments, the above step S04 specifically includes:
[0053] Step S041: Obtain the morphological features of the limit sample in the area where the wafer clamping contact point is located;
[0054] Step S042: Based on the morphological features, determine whether the target wafer clamping device is abnormal and the type of abnormality.
[0055] In the above solution, since the monitoring model is softer than the wafer and is more prone to deformation, it is possible to perform abnormal analysis on the wafer clamping device by obtaining the morphological features of the area where the wafer clamping contact point is located.
[0056] In some exemplary embodiments, the above step S041 includes:
[0057] Detect the morphological features of the limit sample in the area where the wafer clamping contact point is located through a microscope.
[0058] Detecting the morphological features of the limit sample in the area where the clamping contact point is located through a microscope has the advantages of low cost, easy operation, direct observation, high resolution, multiple imaging methods, and quantitative analysis. However, it is not limited to this.
[0059] In some exemplary embodiments, the above step S042 includes:
[0060] When there are abnormal points, lines, or surface scratch defects on the surface of the limit sample in the peripheral area of the wafer clamping contact point, it is determined that the target wafer clamping device is abnormal, and the type of abnormality includes the presence of foreign objects at the clamping contact point of the target wafer clamping device;
[0061] When the deformation amount of the limit sample at the wafer clamping contact point is greater than the threshold, it is determined that the target wafer clamping device is abnormal, and the type of abnormality includes the presence of hardware missing or hardware damage at the clamping contact point of the target wafer clamping device.
[0062] After verification and analysis: If there are foreign objects at the clamping contact point of the target wafer clamping device, due to the presence of the foreign objects, scratches will be caused on the surface of the peripheral area of the wafer clamping contact point of the limit sample, and the types of scratches include but are not limited to abnormal points, lines, or surface scratches.
[0063] If there is hardware missing or hardware damage at the clamping contact point of the target wafer clamping device, corresponding deformation will occur at the wafer clamping contact point of the limit sample, and the specific deformation morphology can be specific abnormal situations.
[0064] It should be understood that the above are only examples, and the analysis of the type of abnormality is not limited to this. For example, based on the analysis of the morphological features of the wafer clamping contact point of the limit sample, the determined types of abnormality can also include excessive or too small clamping force, clamping position deviation, etc.
[0065] In addition, when the determined abnormal types can also include situations such as excessive or insufficient clamping force, and offset of the clamping position, etc., quantitative analysis can also be performed according to the morphological characteristics at the wafer clamping contact points of the limit samples, so as to calculate the correction parameters of the clamping force and the clamping position of the target wafer clamping device.
[0066] It should be noted that the calculation of the specific correction parameters is related to the monitoring model and the hardness difference of the wafer. In practical applications, the calculation can be performed according to the monitoring model, the hardness difference of the wafer, and the own parameters of the device hardware, such as the hardness of the clamping part of the hardware.
[0067] In addition, an embodiment of the present disclosure also provides a wafer processing device, including: a processor and a memory; the processor is configured to execute the instructions stored in the memory to implement the wafer processing monitoring method of the embodiment of the present disclosure.
[0068] Since the principle of the wafer processing device for solving problems is similar to the principle of the above-mentioned wafer processing monitoring method for solving problems, therefore, for the embodiments of the wafer processing device provided in the embodiments of the present disclosure, reference can be made to the embodiments of the above-mentioned wafer processing monitoring method provided in the embodiments of the present disclosure, which will not be elaborated here.
[0069] In addition, an embodiment of the present disclosure also provides a wafer processing method, the method includes:
[0070] Before or during the wafer is processed according to the normal wafer processing procedure, monitor whether there are any abnormalities and the types of abnormalities in the normal wafer processing procedure through the above-mentioned wafer processing monitoring method;
[0071] Based on the monitoring results, after performing abnormal repair on the normal wafer processing procedure, process the wafer according to the normal wafer processing procedure.
[0072] Since the principle of the wafer processing method for solving problems is similar to the principle of the above-mentioned wafer processing monitoring method for solving problems, therefore, for the embodiments of the wafer processing method provided in the embodiments of the present disclosure, reference can be made to the embodiments of the above-mentioned wafer processing monitoring method provided in the embodiments of the present disclosure, which will not be elaborated here.
[0073] In one embodiment, the present disclosure also provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps in the above-mentioned method embodiments are implemented.
[0074] For the above-mentioned computer-readable storage medium, since the computer program stored in its memory is executed by a processor to implement the steps in the above-mentioned method embodiments.
[0075] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, storage, database, or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memories. Non-volatile memories can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, or optical memory, etc. Volatile memories can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc.
[0076] In addition, an embodiment of the present disclosure also provides a wafer processed by the wafer processing method described above. In the defect detection data at the wafer clamping contact points, there is no defect detection data that conforms to the control rules for controlling contact defects. Among them, the defect detection data that conforms to the control rules for controlling contact defects can be data obtained by defect detection using multiple wafers with typical anomalies (for example, there are abnormal points, line or surface scratch defects in the surrounding area of the wafer clamping contact points, etc.) as samples during the production process. In addition, the defect detection data at the wafer clamping contact points can be data obtained by defect detection using a particle counter.
[0077] The following points need to be explained:
[0078] (1) The drawings in the embodiments of the present disclosure only relate to the structures involved in the embodiments of the present disclosure. Other structures can refer to the general design.
[0079] (2) For clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is enlarged or reduced, that is, these drawings are not drawn to actual scale. It can be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, the element can be "directly" on or under the other element or there can be intermediate elements.
[0080] (3) Without conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other to obtain new embodiments.
[0081] The above is only the specific implementation manner of the present disclosure, but the protection scope of the present disclosure is not limited thereto. The protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims
1. A monitoring model, characterized in that: It is used to replace the wafer to enter the predetermined wafer processing procedure to monitor the wafer processing; the monitoring model includes a sheet body, the sheet body has the same shape and size as the wafer, and the hardness of the sheet body is less than the hardness of the wafer.
2. The monitoring model according to claim 1, characterized in that: The sheet body is made of non-metallic material.
3. A wafer processing monitoring method, characterized in that: include: Providing a monitoring model as claimed in any one of claims 1 or 2; Before or during the wafer is processed according to a normal wafer processing procedure, the monitoring model replaces the wafer and enters a predetermined wafer processing procedure; The processed monitoring model is used as a limit sample to perform defect detection; Based on the defect detection result of the limit sample, it is determined whether there is an abnormality in the normal wafer processing process and the type of the abnormality.
4. The wafer processing monitoring method according to claim 3, characterized in that: The step of replacing the wafer with the monitoring model and entering a predetermined wafer processing procedure specifically includes: When the normal wafer processing procedure includes multiple wafer clamping devices, the monitoring model is used to replace the wafer, and the wafer is processed multiple times through the predetermined wafer processing procedure, wherein each predetermined wafer processing procedure includes only one target wafer clamping device.
5. The wafer processing monitoring method according to claim 4, characterized in that: The step of determining whether there is an abnormality in the normal processing of the wafer and the type of abnormality based on the defect detection result of the limit sample specifically includes: Acquiring the morphological characteristics of the limit sample in the area where the wafer clamping contact point is located; Based on the morphological features, it is determined whether the target wafer clamping device is abnormal and the type of abnormality.
6. The wafer processing monitoring method according to claim 5, characterized in that: The determining whether the target wafer clamping device is abnormal and the type of abnormality based on the morphological features includes: When the limit sample has abnormal point, line or surface scratch defects on the surface of the peripheral area of the wafer clamping contact point, it is determined that the target wafer clamping device has an abnormality, and the abnormality type includes the presence of foreign matter at the clamping contact point of the target wafer clamping device; When the deformation amount of the limit sample at the wafer clamping contact point is greater than a threshold value, it is determined that the target wafer clamping device has an abnormality, and the abnormality type includes hardware missing or hardware damage at the clamping contact point of the target wafer clamping device.
7. The wafer processing monitoring method according to claim 5, characterized in that: The step of obtaining the morphological features of the limit sample in the area where the wafer clamping contact point is located includes: The morphological features of the limit sample in the area where the wafer clamping contact point is located are detected by a microscope.
8. A wafer processing equipment, characterized in that: include: Processor and memory; The processor is used to execute instructions stored in the memory to implement the wafer processing monitoring method as described in any one of claims 3 to 7.
9. A wafer processing method, characterized in that: The method comprises: Before or during the wafer processing according to the normal wafer processing procedure, monitoring whether there is an abnormality in the normal wafer processing procedure and the type of abnormality by the wafer processing monitoring method according to any one of claims 3 to 7; Based on the monitoring result, after performing abnormal maintenance on the normal wafer processing procedure, the wafer is processed according to the normal wafer processing procedure.
10. A wafer processed by the wafer processing method according to claim 9, characterized in that: Among the defect detection data at the wafer clamping contact point, there is no defect detection data that complies with the card control rule for card control of contact defects.