Electronic device

Abstract

The invention provides an electronic device. The electronic device comprises a substrate, a driving circuit layer, a color filter layer and a first transparent organic layer. The driving circuit layer is arranged on the substrate. The color filter layer is arranged on the driving circuit layer and is provided with a first through hole. The first transparent organic layer is disposed on the color filter layer. At least part of the first transparent organic layer is arranged in the first through hole. The first transparent organic layer covers at least part of the upper surface of the color filter layer. According to the electronic device, the problems of light leakage and electrode overexposure can be solved, or the quality of a display picture can be improved.

Description

Technical Field

[0001] The present disclosure relates to an electronic device, and more particularly to an electronic device capable of improving the display screen quality. Background Art

[0002] Electronic devices or tiled electronic devices have been widely used in different fields such as communication, display, automotive, or aviation. With the booming development of electronic devices, electronic devices are being developed towards being thinner and lighter, so the requirements for the reliability or quality of electronic devices are higher. Summary of the Invention

[0003] The present disclosure provides an electronic device that can improve the problems of light leakage and electrode overexposure or can improve the display screen quality.

[0004] According to an embodiment of the present disclosure, the electronic device includes a substrate, a driving circuit layer, a color filter layer, and a first transparent organic layer. The driving circuit layer is disposed on the substrate. The color filter layer is disposed on the driving circuit layer and has a first through hole. The first transparent organic layer is disposed on the color filter layer. At least a part of the first transparent organic layer is disposed in the first through hole. The first transparent organic layer covers at least a part of the upper surface of the color filter layer. Brief Description of the Drawings

[0005] The drawings are included to provide a further understanding of the present disclosure, and the drawings are incorporated into and constitute a part of this specification. The drawings illustrate embodiments of the present disclosure and, together with the description, are used to explain the principles of the present disclosure.

[0006] Figure 1 A top view schematic diagram of the electronic device according to the first embodiment of the present disclosure;

[0007] Figure 2 is Figure 1 A cross-sectional schematic diagram of the electronic device along the section line I-I';

[0008] Figure 3 A top view schematic diagram of the electronic device according to the second embodiment of the present disclosure;

[0009] Figure 4 is Figure 3 A cross-sectional schematic diagram of the electronic device along the section line II-II';

[0010] Figure 5 A cross-sectional schematic diagram of the electronic device according to the third embodiment of the present disclosure;

[0011] Figure 6 A cross-sectional schematic diagram of the electronic device according to the fourth embodiment of the present disclosure;

[0012] Figure 7 A cross-sectional schematic diagram of the electronic device according to the fifth embodiment of the present disclosure;

[0013] Figure 8 A cross-sectional schematic diagram of the electronic device according to the sixth embodiment of the present disclosure;

[0014] Figure 9 A cross-sectional schematic diagram of the electronic device according to the seventh embodiment of the present disclosure;

[0015] Figure 10 A cross-sectional schematic diagram of the electronic device according to the eighth embodiment of the present disclosure.

[0016] Explanation of the reference numerals in the drawings

[0017] 100, 100a, 100b, 100c, 100d, 100e, 100f, 100g: Electronic devices; 110: Substrate;

[0018] 120, 120a: Driving circuit layer;

[0019] 130, 130a: Color filter layer;

[0020] 131, 132: Filter layer;

[0021] 133: Light-shielding layer;

[0022] 138: Upper surface;

[0023] 140, 140d, 140e, 140g: First transparent organic layer;

[0024] 150: Transfer pad;

[0025] 160, 160d, 160f, 160g: Second transparent organic layer;

[0026] 170, 170d, 175: Connection electrode;

[0027] 180, 180d: Pixel electrode;

[0028] 190, 190e: Third transparent organic layer;

[0029] CR: Channel region;

[0030] DL: Data line;

[0031] DR: Drain region;

[0032] GE, GE1: Gate;

[0033] GI, GIa: Gate insulating layer;

[0034] 121, IL1, IL2, IL3: Insulating layer;

[0035] LS: Masking layer;

[0036] NOR: Non-opening region;

[0037] O1: First through hole;

[0038] O2: Second through hole;

[0039] O3: Third through hole;

[0040] OR: Opening region;

[0041] P1, P2: Bottom plane;

[0042] SD1: Source electrode;

[0043] SD2: Drain electrode;

[0044] S1, S3: Sidewall;

[0045] SE, SE1: Semiconductor layer;

[0046] SL: Scanning line;

[0047] SR: Source region;

[0048] TFT, TFT1: Thin film transistor;

[0049] V1, V2, V3: Opening;

[0050] T1, T2, T3: Thickness;

[0051] W1, W2: Width;

[0052] X, Y, Z: Direction. Detailed implementation

[0053] This disclosure can be understood by referring to the following detailed description and simultaneously combining the accompanying drawings. It should be noted that for the convenience of the reader's understanding and for the simplicity of the drawings, only a part of the electronic device is shown in the multiple drawings of this disclosure, and the specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the drawings are only for illustration and are not used to limit the scope of this disclosure.

[0054] In the following specification and claims, words such as "comprising" and "including" are open-ended terms, and thus should be interpreted as meaning "including but not limited to...".

[0055] It should be understood that when an element or film layer is referred to as being "on" or "connected to" another element or film layer, it can be directly on or directly connected to this other element or layer, or there are intervening elements or film layers between the two (non-direct case). Conversely, when an element is referred to as being "directly" "on" or "directly connected to" another element or film layer, there are no intervening elements or film layers between the two.

[0056] Although the terms "first", "second", "third", etc. may be used to describe various components, the components are not limited to these terms. These terms are only used to distinguish a single component in the specification from other components. The same terms may not be used in the claims, and the first, second, third, etc. are replaced according to the order of component declarations in the claims. Therefore, in the following specification, the first component may be the second component in the claims.

[0057] In the text, the terms "about", "approximately", "substantially", "substantially" generally mean within 10%, or 5%, or 3%, or 2%, or 1%, or 0.5% of a given value or range. The given quantity is an approximate quantity, that is, the meaning of "about", "approximately", "substantially", "substantially" can still be implied without specifically stating "about", "approximately", "substantially", "substantially".

[0058] In some embodiments of the present disclosure, terms related to joining and connection, such as "connect", "interconnect", etc., unless specifically defined, may mean that two structures are in direct contact, or may also mean that two structures are not in direct contact, and there are other structures disposed between the two. And these terms related to joining and connection may also include the cases where both structures can move, or both structures are fixed. In addition, the term "coupled" includes any direct and indirect electrical connection means.

[0059] In some embodiments of the present disclosure, an optical microscope (OM), a scanning electron microscope (SEM), an α-step, an ellipsometer, or other suitable means can be used to measure the area, width, thickness, or height of each element, or the distance or spacing between elements. Specifically, according to some embodiments, a scanning electron microscope can be used to obtain a cross-sectional structure image of the element to be measured, and the area, width, thickness, or height of each element, or the distance or spacing between elements can be measured.

[0060] The electronic device disclosed herein may include, but is not limited to, a display device, a light-emitting device, a backlight device, a virtual reality device, an augmented reality device, an antenna device, a communication device, a sensing device, or a splicing device. The electronic device may be a bendable or flexible electronic device. The electronic device may include, for example, liquid crystal, light-emitting diode, fluorescence, phosphor, other suitable display media, or a combination of the foregoing, but is not limited thereto. The display device may be a non-self-luminous display device or a self-luminous display device. The antenna device may be an antenna device in a liquid crystal form or an antenna device in a non-liquid crystal form. The sensing device may be a sensing device for sensing capacitance, light, heat, or ultrasonic waves, but is not limited thereto. The electronic device may include, for example, electronic components such as passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may include a light-emitting diode or a photodiode. The light-emitting diode may include, for example, an organic light-emitting diode (OLED), a mini light-emitting diode (mini LED), a micro light-emitting diode (micro LED), or a quantum dot light-emitting diode (quantum dot, QD, which may be, for example, QLED, QDLED), or other suitable materials, and the materials may be arranged and combined arbitrarily, but are not limited thereto. The antenna device may be, for example, a phased array antenna, but is not limited thereto. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any permutation and combination of the foregoing, but is not limited thereto. In addition, the shape of the electronic device may be rectangular, circular, polygonal, a shape with curved edges, or other suitable shapes. The electronic device may have peripheral systems such as a driving system, a control system, and a light source system to support the display device, the antenna device, the wearable device (such as including augmented reality or virtual reality), the vehicle-mounted device (such as including an automobile windshield), or the splicing device. The following will illustrate the disclosure with an electronic device, but the disclosure is not limited thereto.

[0061] It should be noted that, without departing from the spirit of the disclosure, the features in several different embodiments may be replaced, reorganized, and mixed to complete other embodiments in the following exemplary embodiments. As long as the features between the embodiments do not violate the inventive spirit or conflict with each other, they can be arbitrarily mixed and used.

[0062] Now, reference will be made in detail to the exemplary embodiments of the disclosure. Examples of the exemplary embodiments are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to denote the same or similar parts.

[0063] Figure 1 The top view schematic diagram of the electronic device according to the first embodiment of the disclosure.Figure 2 is Figure 1 A schematic cross-sectional view of the electronic device along the section line I-I'. For the clarity of the drawings and for convenience of description, Figure 1 several elements in the electronic device are omitted.

[0064] Please refer to Figure 1 and Figure 2 , the electronic device 100 of this embodiment may include a substrate 110, a driving circuit layer 120, a color filter layer 130, and a first transparent organic layer 140. In addition, in this embodiment, the electronic device 100 may further include scan lines SL, data lines DL, a shielding layer LS, a connection pad 150, a second transparent organic layer 160, a connection electrode 170, a pixel electrode 180, an opening region OR, and a non-opening region NOR.

[0065] The opening region OR may be a region through which light can pass; the non-opening region NOR may be a region through which light cannot pass, and the non-opening region NOR may include any film layer that can be used for light shielding (such as opaque regions such as wiring regions and transistor regions). The substrate 110 may include a rigid substrate, a flexible substrate, or a combination of the foregoing. For example, the material of the substrate 110 may include glass, quartz, sapphire, ceramics, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), other suitable substrate materials, or a combination of the foregoing, but is not limited thereto.

[0066] The shielding layer LS is disposed between the driving circuit layer 120 and the substrate 110. In this embodiment, the material of the shielding layer LS may be, for example, a metal material or a light shielding material. In some embodiments, the electronic device may also not be provided with a shielding layer as needed (as Figure 4 shown).

[0067] The driving circuit layer 120 is disposed on the substrate 110. The driving circuit layer 120 includes an insulating layer 121, a thin film transistor TFT, a gate insulating layer GI, an insulating layer IL1, and an insulating layer IL2. The thin film transistor TFT is at least partially disposed in the non-opening region NOR, and the thin film transistor TFT has a semiconductor layer SE, a gate GE, a source SD1, and a drain SD2.

[0068] Specifically, an insulating layer 121 is disposed on a substrate 110. A semiconductor layer SE is disposed on the insulating layer 121. The semiconductor layer SE may include a source region SR, a channel region CR, and a drain region DR. The material of the semiconductor layer SE may be low-temperature polycrystalline silicon (LTPS), amorphous silicon, poly-silicon, an oxide semiconductor layer, other suitable materials, or a combination of the above materials, but is not limited thereto. The shape of the semiconductor layer SE may be U-shaped (as shown in Figure 1 ), but is not limited thereto. A gate insulating layer GI is disposed on the semiconductor layer SE. A gate GE is disposed on the gate insulating layer GI. The region where the semiconductor layer SE overlaps with the gate GE in the direction Z (i.e., the normal direction of the substrate 110) can be regarded as the channel region CR. An insulating layer IL1 is disposed on the gate GE, and the insulating layer IL1 is disposed between the insulating layer IL2 and the gate insulating layer GI. The insulating layer IL1 may cover the gate insulating layer GI and the gate GE. A source electrode SD1 and a drain electrode SD2 are respectively disposed on the insulating layer IL1. The source electrode SD1 can be electrically connected to the source region SR of the semiconductor layer SE through an opening V1 penetrating the insulating layer IL1 and the gate insulating layer GI, and the drain electrode SD2 can be electrically connected to the drain region DR of the semiconductor layer SE through an opening V2 penetrating the insulating layer IL1 and the gate insulating layer GI. An insulating layer IL2 is disposed on the source electrode SD1 and the drain electrode SD2, and the insulating layer IL2 may cover the insulating layer IL1, the source electrode SD1, and the drain electrode SD2. In this embodiment, the insulating layer 121, the gate insulating layer GI, the insulating layer IL1, and the insulating layer IL2 may be a single-layer structure or a multi-layer structure, and may include, for example, an organic material, an inorganic material, or a combination of the foregoing, but is not limited thereto.

[0069] Although the thin film transistor TFT in this embodiment is a top gate thin film transistor, it is not limited thereto; in some embodiments, the thin film transistor may also be a bottom gate thin film transistor and / or a dual gate or double gate thin film transistor.

[0070] In this embodiment, the direction X, the direction Y, and the direction Z are respectively different directions. For example, the direction X is, for example, the extending direction of the scan line SL, the direction Y is, for example, the extending direction of the data line DL, and the direction Z may be, for example, the normal direction of the substrate 110. Among them, the direction X is substantially perpendicular to the direction Y, and the direction X and the direction Y are respectively substantially perpendicular to the direction Z, but is not limited thereto.

[0071] The scan line SL and the data line DL are disposed on the substrate 110. The scan line SL extends along the direction X, and the data line DL extends along the direction Y. The scan line SL can be electrically connected to the gate electrode GE of the thin film transistor TFT, and the data line DL can be electrically connected to the source electrode SD1 of the thin film transistor TFT.

[0072] The transfer pad 150 is disposed on the insulating layer IL2 of the driving circuit layer 120, and the transfer pad 150 is disposed between the pixel electrode 180 and the drain electrode SD2. The transfer pad 150 can overlap the drain electrode SD2 in the direction Z. The transfer pad 150 can be electrically connected to the pixel electrode 180 and the drain electrode SD2. In this embodiment, the transfer pad 150 and the drain electrode SD2 can be single-layer or multi-layer conductive materials respectively, and the materials can include metals, other suitable transparent or opaque conductive materials, or combinations of the foregoing, but are not limited thereto. In some embodiments, the setting of the transfer pad 150 and / or the insulating layer IL2 can be omitted, and the drain electrode SD2 can be directly electrically connected to the connection electrode 170.

[0073] The color filter layer 130 is disposed on the driving circuit layer 120. The color filter layer 130 is disposed between the pixel electrode 180 and the driving circuit layer 120, and the color filter layer 130 is disposed between the connection electrode 170 and the drain electrode SD2. The color filter layer 130 includes a filter layer 131 and a filter layer 132. The light-shielding layer 133 is disposed between the filter layer 131 and the filter layer 132. In the direction Z, the overlapping portion of the filter layer 131 and the filter layer 132 can be regarded as a light-shielding structure and has a light-shielding effect, and the overlapping portion of the filter layer 131 and the filter layer 132 can overlap the light-shielding layer 133. In this embodiment, the light-shielding layer 133 can be, for example, a black matrix layer (BM) or a film layer of a material with low transmittance, but is not limited thereto. In addition, in this embodiment, the color filter layer 130 has a first through hole O1. The first through hole O1 is disposed in the non-opening area NOR. The first through hole O1 has a side wall S1, and the first through hole O1 can expose a part of the transfer pad 150.

[0074] The second transparent organic layer 160 is disposed between the color filter layer 130 and the first transparent organic layer 140. The second transparent organic layer 160 includes a third through hole O3. The third through hole O3 is disposed in the non-opening area NOR. The third through hole O3 can overlap the first through hole O1 in the direction Z. The third through hole O3 can connect the first through hole O1 and expose a part of the transfer pad 150 or the drain electrode SD2. The third through hole O3 has a side wall S3, and the side wall S3 of the third through hole O3 can be aligned and connected to the side wall S1 of the first through hole O1. In addition, the second transparent organic layer 160 has a thickness T2 (for example, the maximum thickness), and the thickness T2 is, for example, the thickness measured along the direction Z of the second transparent organic layer 160.

[0075] The connection electrode 170 is disposed on the second transparent organic layer 160, and the connection electrode 170 is disposed between the first transparent organic layer 140 and the second transparent organic layer 160. The connection electrode 170 can also be disposed in the third through hole O3 and the first through hole O1, so that the connection electrode 170 can be electrically connected to the transfer pad 150 or the drain SD2 through the third through hole O3 and the first through hole O1. The connection electrode 170 can include any suitable transparent conductive material, such as indium tin oxide (ITO), but is not limited thereto.

[0076] The first transparent organic layer 140 is disposed on the color filter layer 130. The first transparent organic layer 140 is disposed on the second transparent organic layer 160 and the connection electrode 170. At least a part of the first transparent organic layer 140 can be disposed in the first through hole O1 and the third through hole O3. The first transparent organic layer 140 can cover at least a part of the upper surface 138 of the color filter layer 130 (i.e., the surface of the color filter layer 130 facing away from the driving circuit layer 120). In this embodiment, "cover" means that the two at least partially overlap, the two can be in direct contact, or there are other elements between the two. The "upper surface 138" means the surface of the color filter layer 130 that is substantially parallel to the substrate 110. Therefore, if the color filter layer 130 is not parallel to the substrate 110, it is a side surface.

[0077] In this embodiment, due to problems such as poor liquid crystal alignment and light leakage and overexposure of the transparent electrode (such as the connection electrode 170) at the through hole corresponding to, for example, the third through hole O3 connecting the first through hole O1, therefore, the electronic device 100 of this embodiment is to dispose at least a part of the first transparent organic layer 140 in the first through hole O1 and the third through hole O3 to improve the problems of light leakage and electrode overexposure, thereby improving the display image quality, process feasibility or product yield.

[0078] The first transparent organic layer 140 includes a second through hole O2. The second through hole O2 is disposed in the non-opening region NOR. The second through hole O2 does not overlap with the third through hole O3 and the first through hole O1 in the Z direction. The second through hole O2 may expose a part of the connection electrode 170. In some other embodiments, the second through hole O2 may be disposed in the opening region OR, and the present disclosure is not limited thereto. In addition, the first transparent organic layer 140 has a thickness T1, and the thickness T1 is, for example, the thickness measured along the Z direction of the first transparent organic layer 140. In this embodiment, the thickness T1 of the first transparent organic layer 140 may be, for example, less than 0.5 micrometers (μm), so that the liquid crystal and the pixel electrode 180 corresponding to the second through hole O2 are not likely to have problems of poor liquid crystal alignment and light leakage and electrode overexposure, but it is not limited thereto. In some embodiments, when the thickness of the first transparent organic layer is greater than 0.5 micrometers, the filling effect of the third through hole O3 and the first through hole O1 can be improved.

[0079] In this embodiment, the sum of the thickness T1 of the first transparent organic layer 140 and the thickness T2 of the second transparent organic layer 160 may be, for example, less than 6 micrometers to reduce the problem of color shift or transmittance decrease in the opening region OR, but it is not limited thereto. In some embodiments, when the thickness T2 of the second transparent organic layer 160 is less than 0.5 micrometers, the depth of the third through hole O3 can be reduced to improve the filling effect of the first transparent organic layer 140 for filling the third through hole O3 and the first through hole O1.

[0080] In this embodiment, when manufacturing the first transparent organic layer 140 and / or the second transparent organic layer 160, the first transparent organic layer 140 and / or the second transparent organic layer 160 with a predetermined thickness may be directly formed, but it is not limited thereto; in some embodiments, in order to improve the filling effect, a film layer thicker than the predetermined thickness may be first formed, and then the first transparent organic layer 140 and / or the second transparent organic layer 160 with the predetermined thickness may be thinned by etching or a second yellow light process.

[0081] In this embodiment, the "transparent organic layer" (including the first transparent organic layer 140 and the second transparent organic layer 160) refers to a colorless organic layer, or the transmittance of the "transparent organic layer" may be greater than the transmittance of the color filter layer.

[0082] The pixel electrode 180 is disposed on the first transparent organic layer 140 and in the second through hole O2 so that the pixel electrode 180 can be electrically connected to the connection electrode 170 through the second through hole O2. In addition, the pixel electrode 180 can be electrically connected to the drain SD2 through the connection electrode 170 and the transfer pad 150.

[0083] Other embodiments will be listed below for illustration. It must be noted here that the following embodiments follow the component numbers and some content of the foregoing embodiments, where the same numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference can be made to the foregoing embodiments, and the following embodiments will not be repeated.

[0084] Figure 3 The upper view schematic diagram of the electronic device according to the second embodiment of the present disclosure. Figure 4 is Figure 3 The cross-sectional schematic diagram of the electronic device along the section line II-II'. Please refer to Figures 3 to 4 and Figures 1 to 2 at the same time. The electronic device 100a of this embodiment is similar to the electronic device 100 in Figures 1 to 2 , but the difference between the two is that in the electronic device 100a of this embodiment, the material of the semiconductor layer SE1 can be a metal oxide, such as indium gallium zinc oxide (IGZO), but not limited thereto. In addition, the electronic device 100a of this embodiment further includes a scan line SL1.

[0085] Specifically, please refer to Figures 3 to 4 . In this embodiment, the driving circuit layer 120a includes an insulating layer 121, a thin film transistor TFT1, a gate insulating layer GI, an insulating layer IL1, an insulating layer IL2, a gate insulating layer GIa, and an insulating layer IL3. The thin film transistor TFT1 is at least partially disposed in the non-opening region NOR, and the thin film transistor TFT1 has a semiconductor layer SE1, a gate GE, a source SD1, a drain SD2, and a gate GE1. In this embodiment, the thin film transistor TFT1 can be a double-gate thin film transistor, but not limited thereto.

[0086] The insulating layer 121 is disposed on the substrate 110. The gate insulating layer GI is disposed on the insulating layer 121. The gate GE is disposed on the gate insulating layer GI. The insulating layer IL1 is disposed on the gate GE, and the insulating layer IL1 can cover the gate insulating layer GI and the gate GE. The semiconductor layer SE1 is disposed on the insulating layer IL1, and the semiconductor layer SE1 is disposed between the gate GE1 and the gate GE. The semiconductor layer SE1 can include a source region SR, a channel region CR, and a drain region DR. The shape of the semiconductor layer SE1 can be a C shape (as shown in Figure 3as shown), but not limited thereto. The gate insulating layer GIa is disposed on the semiconductor layer SE1, and the gate insulating layer GIa may cover the insulating layer IL1 and the semiconductor layer SE1. The gate GE1 is disposed on the gate insulating layer GIa. The region where the semiconductor layer SE and the gate GE1 overlap in the Z direction can be regarded as the channel region CR, and the gate GE can overlap the channel region CR in the Z direction. The insulating layer IL2 is disposed on the gate GE1, and the insulating layer IL2 may cover the gate insulating layer GIa and the gate GE1. The source SD1 is disposed on the insulating layer IL2, and the source SD1 can be electrically connected to the source region SR of the semiconductor layer SE1 through the opening V1 penetrating the insulating layer IL2 and the gate insulating layer GIa. The insulating layer IL3 is disposed on the source SD1, and the insulating layer IL3 may cover the insulating layer IL2 and the source SD1. The drain SD2 is disposed on the insulating layer IL3, and the drain SD2 can be electrically connected to the drain region DR of the semiconductor layer SE1 through the opening V3 penetrating the insulating layer IL2, the insulating layer IL3 and the gate insulating layer GIa. In this embodiment, the insulating layer 121, the gate insulating layer GI, the gate insulating layer GIa, the insulating layer IL1, the insulating layer IL2 and the insulating layer IL3 may be a single-layer structure or a multi-layer structure, and may include, for example, organic materials, inorganic materials or a combination of the foregoing, but not limited thereto. The drain SD2 may be a single-layer or multi-layer conductive material, and the material may include metals, other suitable transparent or opaque conductive materials, or a combination of the foregoing, but not limited thereto.

[0087] The scanning line SL can be electrically connected to the gate GE of the thin film transistor TFT1, and the scanning line SL1 can be electrically connected to the gate GE1 of the thin film transistor TFT1.

[0088] The color filter layer 130a is disposed on the drain SD2, and the color filter layer 130a may cover the insulating layer IL3 and the drain SD2. The first through hole O1 of the color filter layer 130a may expose a part of the drain SD2.

[0089] The third through hole O3 of the second transparent organic layer 160 can be connected to the first through hole O1 to expose a part of the drain SD2 and the upper surface 138 of a part of the color filter layer 130a. The third through hole O3 has a side wall S3, a bottom plane P1 and a bottom plane P2. The side wall S3 of the third through hole O3 is not flush with the side wall S1 of the first through hole O1, and the side wall S3 of the third through hole O3 can be connected to the side wall S1 of the first through hole O1 through the bottom plane P1 or the bottom plane P2.

[0090] The connection electrode 170 can be electrically connected to the drain SD2 through the third through hole O3 and the first through hole O1.

[0091] The second via hole O2 of the first transparent organic layer 140 is disposed in the opening region OR. The second via hole O2 does not overlap the third via hole O3 and the first via hole O1 in the Z direction. In some other embodiments, the second via hole O2 may also be disposed in the non-opening region NOR, and the present disclosure is not limited thereto.

[0092] Figure 5 It is a cross-sectional schematic diagram of an electronic device according to the third embodiment of the present disclosure. Please refer to Figure 5 and Figure 4 , the electronic device 100b of this embodiment is similar to the electronic device 100a in Figure 4 , but the difference between the two is that in the electronic device 100b of this embodiment, the width W1 of the bottom plane P1 of the third via hole O3 is different from the width W2 of the bottom plane P2.

[0093] Specifically, please refer to Figure 5 , in this embodiment, the width W1 of the bottom plane P1 may be, for example, less than the width W2 of the bottom plane P2, but not limited thereto. Among them, the width W1 is, for example, the width measured along the X direction of the bottom plane P1, and the width W2 is, for example, the width measured along the X direction of the bottom plane P2.

[0094] Figure 6 It is a cross-sectional schematic diagram of an electronic device according to the fourth embodiment of the present disclosure. Please refer to Figure 6 and Figure 4 , the electronic device 100c of this embodiment is similar to the electronic device 100a in Figure 4 , but the difference between the two is that in the electronic device 100c of this embodiment, the second via hole O2 may be disposed in the non-opening region NOR, and the second via hole O2 may partially overlap the third via hole O3 in the Z direction. In addition, the electronic device 100c of this embodiment may further include a third transparent organic layer 190.

[0095] Specifically, please refer to Figure 6 , in this embodiment, the second via hole O2 may at least partially overlap the side wall S3 of the third via hole O3 in the Z direction, and the second via hole O2 may expose the connection electrode 170 located on the side wall S3, but not limited thereto. In some embodiments, the second via hole may also overlap the bottom plane P2 of the third via hole in the Z direction, and the second via hole may expose the connection electrode located on the bottom plane P2.

[0096] The third transparent organic layer 190 is disposed on the pixel electrode 180. In addition, at least a part of the third transparent organic layer 190 may also be disposed in the second via hole O2, so that the liquid crystal corresponding to the second via hole O2 and the pixel electrode 180 are not likely to have problems of poor liquid crystal alignment and light leakage and electrode overexposure, respectively.

[0097] Figure 7 A cross-sectional schematic diagram of the electronic device according to the fifth embodiment of the present disclosure. Please refer to Figure 7 and Figure 4 simultaneously. The electronic device 100d in this embodiment is similar to the electronic device 100a in Figure 4 , except that in the electronic device 100d of this embodiment, the second transparent organic layer 160d is disposed on the first transparent organic layer 140d. In addition, the electronic device 100d of this embodiment may further include a connection electrode 175.

[0098] Specifically, please refer to Figure 7 . In this embodiment, the connection electrode 170d is disposed on the color filter layer 130a, and the connection electrode 170d is disposed between the first transparent organic layer 140d and the color filter layer 130a. The connection electrode 170d may also be disposed in the first through hole O1, so that the connection electrode 170d can be electrically connected to the drain SD2 through the first through hole O1.

[0099] The first transparent organic layer 140d is disposed on the connection electrode 170d, and the first transparent organic layer 140d is disposed between the second transparent organic layer 160d and the color filter layer 130a. The first transparent organic layer 140d may cover at least a part of the upper surface 138 of the color filter layer 130a. At least a part of the first transparent organic layer 140 may also be disposed in the first through hole O1. The second through hole O2 of the first transparent organic layer 140 may be disposed in the opening region OR. The second through hole O2 does not overlap the third through hole O3 and the first through hole O1 in the Z direction. The second through hole O2 may expose a part of the connection electrode 170d.

[0100] The connection electrode 175 is disposed on the first transparent organic layer 140d, and the connection electrode 175 is disposed between the second transparent organic layer 160d and the first transparent organic layer 140d. The connection electrode 175 may also be disposed in the second through hole O2, so that the connection electrode 175 can be electrically connected to the connection electrode 170d through the second through hole O2. The materials of the connection electrode 170d and the connection electrode 175 may be the same as or similar to the material of the foregoing connection electrode 170, which will not be elaborated herein.

[0101] The second transparent organic layer 160d is disposed on the connection electrode 175, and the second transparent organic layer 160d is disposed between the pixel electrode 180d and the first transparent organic layer 140d. The third through hole O3 of the second transparent organic layer 160d is disposed in the non-opening region NOR. The third through hole O3 may expose a part of the connection electrode 175. The third through hole O3 may overlap the first through hole O1 in the Z direction, and the third through hole O3 does not overlap the second through hole O2 in the Z direction. The third through hole O3 is not directly connected to the first through hole O1.

[0102] In this embodiment, the thickness T2 of the second transparent organic layer 160d may be, for example, less than the thickness T1 of the first transparent organic layer 140d, and the thickness T2 of the second transparent organic layer 160d may be, for example, less than 0.5 micrometers, thereby making it less likely that the liquid crystal corresponding to the third through hole O3 and the pixel electrode 180d have problems such as poor liquid crystal alignment and light leakage and electrode overexposure, but not limited thereto.

[0103] In this embodiment, the sum of the thickness T1 of the first transparent organic layer 140d and the thickness T2 of the second transparent organic layer 160d may be, for example, less than 6 micrometers to reduce the problem of color shift or transmittance decrease in the opening region OR, but not limited thereto.

[0104] In this embodiment, when manufacturing the first transparent organic layer 140d and / or the second transparent organic layer 160d, the first transparent organic layer 140d and / or the second transparent organic layer 160d with a predetermined thickness may be directly formed, but not limited thereto; in some embodiments, in order to improve the filling effect, a film layer thicker than the predetermined thickness may be first formed, and then the first transparent organic layer 140d and / or the second transparent organic layer 160d with the predetermined thickness may be thinned by a second yellow light or etching process.

[0105] In this embodiment, since the second through hole O2 is not directly connected to the first through hole O1 (in other words, the second through hole O2 does not overlap with the first through hole O1), the filling effect of the first transparent organic layer 140d filling the first through hole O1 and the filling effect of the second transparent organic layer 160d filling the second through hole O2 can be improved, thereby making it less likely that the liquid crystal corresponding to the first through hole O1 (or the second through hole O2) and the connection electrode 170d (or the connection electrode 175) have problems such as poor liquid crystal alignment and light leakage and electrode overexposure.

[0106] The pixel electrode 180d is disposed on the second transparent organic layer 160d and within the third through hole O3 so that the pixel electrode 180d can be electrically connected to the connection electrode 175 through the third through hole O3. In addition, the pixel electrode 180d can be electrically connected to the drain SD2 through the connection electrode 175 and the connection electrode 170d.

[0107] Figure 8 It is a cross-sectional schematic diagram of an electronic device according to the sixth embodiment of the present disclosure. Please refer to Figure 8 and Figure 7 simultaneously. The electronic device 100e of this embodiment and Figure 7is similar to the electronic device 100d, but the difference between the two is that: in the electronic device 100e of this embodiment, the thickness T1 of the first transparent organic layer 140e can be, for example, less than 0.5 micrometers. Thus, the filling effect of the second through hole O2 in the second transparent organic layer 160d filling the first transparent organic layer 140e can be improved, and the transmittance of the opening region OR and the non-opening region NOR is less affected, enhancing the overall display quality.

[0108] In this embodiment, the color filter layer 130a has a thickness T3, and the thickness T3 of the color filter layer 130a can be, for example, greater than the thickness T1 of the first transparent organic layer 140e or the thickness T2 of the second transparent organic layer 160d, but is not limited thereto. Among them, the thickness T3 is, for example, the thickness measured along the direction Z of the color filter layer 130a.

[0109] Figure 9 is a cross-sectional schematic diagram of the electronic device according to the seventh embodiment of the present disclosure. Please refer to Figure 9 and Figure 7 , the electronic device 100f of this embodiment is similar to the electronic device 100d in Figure 7 , but the difference between the two is that: in the electronic device 100f of this embodiment, the thickness of the second transparent organic layer 160f can be, for example, greater than 0.5 micrometers. In addition, the electronic device 100f of this embodiment may further include a third transparent organic layer 190e.

[0110] Specifically, please refer to Figure 9 , in this embodiment, at least a part of the third transparent organic layer 190e is disposed in the third through hole O3 of the second transparent organic layer 160f, so that the liquid crystal corresponding to the third through hole O3 is not likely to have problems such as poor liquid crystal alignment and light leakage.

[0111] The third transparent organic layer 190e has a recess 191, and the recess 191 can correspond to and overlap the third through hole O3 in the direction Z. The transparent organic layer 190 of the foregoing embodiment may also include a recess, but the present disclosure is not limited thereto. In the present disclosure, the positions of the transparent organic layer (including the first transparent organic layer, the second transparent organic layer, and the third transparent organic layer) corresponding to the through holes (including the first through hole, the second through hole, and the third through hole) can all have recesses, and the present disclosure is not limited thereto.

[0112] In this embodiment, since the thickness T2 of the second transparent organic layer 160f can be, for example, greater than 0.5 micrometers, the filling effect of the second through hole O2 in the second transparent organic layer 160f filling the first transparent organic layer 140d can be improved.

[0113] Figure 10 is a cross-sectional schematic diagram of the electronic device according to the eighth embodiment of the present disclosure. Please refer to Figure 10With Figure 7 ,the electronic device 100g of this embodiment is similar to Figure 7 the electronic device 100d in, but the difference between the two is that: in the electronic device 100g of this embodiment, the first transparent organic layer 140g does not cover the upper surface 138 of the color filter layer 130a in the opening region OR, thereby improving the transmittance of the opening region OR.

[0114] Specifically, please refer to Figure 10 , in this embodiment, the first transparent organic layer 140g is disposed on the connection electrode 170d, and the first transparent organic layer 140g is disposed in the first through hole O1. The first transparent organic layer 140g does not contact the color filter layer 130a. Or the first transparent organic layer 140g may cover a part of the color filter layer 130a, and at least a part of the color filter layer 130a is not covered by the first transparent organic layer 140g.

[0115] The second transparent organic layer 160g is disposed on the first transparent organic layer 140g, and the second transparent organic layer 160g may cover the color filter layer 130a, the connection electrode 170d, and the first transparent organic layer 140g. The third through hole O3 of the second transparent organic layer 160g may be disposed in the opening region OR.

[0116] In summary, in the electronic device of the present disclosure embodiment, by disposing at least a part of the first transparent organic layer in the first through hole and the third through hole, the problem of light leakage and electrode overexposure is improved by filling the deeper through holes, thereby improving the display image quality, the process feasibility or the product yield. The thickness of the first transparent organic layer may be, for example, less than 0.5 micrometers, so that the liquid crystal and the pixel electrode corresponding to the second through hole are not likely to have problems of poor liquid crystal alignment and light leakage and electrode overexposure respectively. At least a part of the third transparent organic layer may also be disposed in the second through hole, so that the liquid crystal and the pixel electrode corresponding to the second through hole are not likely to have problems of poor liquid crystal alignment and light leakage and electrode overexposure respectively. In addition, in some embodiments, since the second through hole is not connected to the first through hole, the filling effect of the first transparent organic layer filling the first through hole and the filling effect of the second transparent organic layer filling the second through hole can be improved, so that the liquid crystal and the connection electrode corresponding to the first through hole (or the second through hole) are not likely to have problems of poor liquid crystal alignment and light leakage and electrode overexposure respectively.

[0117] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. An electronic device, characterized in that, Comprising: A substrate; A driving circuit layer disposed on the substrate; A color filter layer disposed on the driving circuit layer and having a first through hole; And A first transparent organic layer disposed on the color filter layer, wherein at least a part of the first transparent organic layer is disposed in the first through hole, wherein the first transparent organic layer covers at least a part of the upper surface of the color filter layer.

2. The electronic device according to claim 1, wherein Further comprising: A second transparent organic layer disposed between the color filter layer and the first transparent organic layer.

3. The electronic device according to claim 2, wherein, The first transparent organic layer includes a second through hole, the second transparent organic layer includes a third through hole, and the electronic device further includes: An opening area; and A non-opening area, wherein the first through hole, the second through hole and the third through hole are disposed in the non-opening area.

4. The electronic device according to claim 2, wherein The first transparent organic layer includes a second through hole, and the electronic device further includes: A third transparent organic layer, wherein at least a part of the third transparent organic layer is disposed in the second through hole.

5. The electronic device according to claim 1, characterized in that, Further comprising: A second transparent organic layer disposed on the first transparent organic layer.

6. The electronic device according to claim 5, wherein The first transparent organic layer includes a second through hole, the second transparent organic layer includes a third through hole, and the electronic device further includes: An opening area; and A non-opening area, wherein the second through hole is disposed in the opening area, and the third through hole is disposed in the non-opening area.

7. The electronic device according to claim 6, wherein Further comprising: A third transparent organic layer, wherein at least a part of the third transparent organic layer is disposed in the third through hole.

8. The electronic device according to claim 7, characterized in that, The third transparent organic layer has a recess, and the recess corresponds to the third through hole.

9. The electronic device according to claim 5, wherein, The thickness of the second transparent organic layer is less than the thickness of the first transparent organic layer.

10. The electronic device according to claim 1, characterized in that, The driving circuit layer includes a thin film transistor having a drain, and the electronic device further includes: A connection electrode; and A pixel electrode electrically connected to the drain through the connection electrode, wherein the color filter layer is disposed between the connection electrode and the drain.

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