Shower head assembly and substrate processing apparatus

Abstract

According to the invention, a showerhead assembly and a substrate processing apparatus are provided. The showerhead assembly includes: a showerhead configured to eject a process gas to a substrate processing space of the process chamber; and a cut-off gas flow forming unit that forms a cut-off gas flow passing through the inside of the showerhead in a direction orthogonal to the ejection direction of the process gas in the showerhead, thereby cutting off the ejection of the process gas. According to the showerhead assembly, the amount of the process gas supplied to the substrate processing space can be precisely adjusted.

Description

Technical Field

[0001] Embodiments of the present invention relate to a showerhead assembly having a showerhead for injecting a process gas required for a substrate processing process and a substrate processing apparatus including the same. Background Art

[0002] To fabricate semiconductors, various substrate processing processes should be performed. Etching, thin film deposition, ion implantation, cleaning, etc. in the substrate processing processes for semiconductor fabrication are performed by a substrate processing apparatus using a process gas.

[0003] Generally, a substrate processing apparatus using a process gas includes a process chamber, a substrate support unit, and a showerhead. The process chamber provides a substrate processing space, the substrate support unit supports a substrate in the substrate processing space, and the showerhead injects a process gas from a process gas supply unit toward the substrate supported by the substrate support unit.

[0004] When performing a substrate processing process through such a substrate processing apparatus, it is necessary to adjust the amount of the process gas to be supplied to the substrate processing space by supplying and interrupting the process gas. In this case, the process gas supply unit is controlled to supply the process gas or interrupt the supply of the process gas. Such control has a problem that even when the supply of the process gas is interrupted, the process gas remaining in the pipelines and the inside of the showerhead is additionally supplied, and there is a problem that when the supply of the process gas is turned on, the supply of the process gas is delayed by a time period required to transfer the process gas, and it is difficult to precisely control the amount of the process gas.

[0005] On the other hand, in order to uniformly process a substrate, it is necessary to adjust the amount of the process gas injected from the showerhead according to each region of the showerhead, and the fact is that an improvement scheme for simply implementing this is required.

[0006] (Patent Document 1) Korean Patent Publication No. 10-0400044 (September 29, 2003)

[0007] (Patent Document 2) Korean Patent Publication No. 10-2217160 (February 19, 2021) Summary of the Invention

[0008] An object of embodiments of the present invention is to provide a showerhead assembly capable of more precisely controlling the supply amount of a process gas and a substrate processing apparatus including the same.

[0009] An object of embodiments of the present invention is to provide a showerhead assembly capable of more uniformly processing a substrate and a substrate processing apparatus including the same.

[0010] The problems to be solved are not limited thereto, and other problems not mentioned can be clearly understood by those of ordinary skill in the art from the following description.

[0011] According to an embodiment of the present invention, a showerhead assembly can be provided. The showerhead assembly includes: a showerhead for ejecting a process gas into a substrate processing space; and a cut-off air flow forming unit for forming a cut-off air flow flowing in a direction intersecting with the ejection direction of the process gas inside the showerhead to cut off the ejection of the process gas.

[0012] It can be that the showerhead is configured such that the cut-off air flow passes through the inside of the showerhead. It can be that the showerhead forms a gas supply port for supplying the gas of the cut-off air flow and a gas discharge port for discharging the gas of the cut-off air flow at a facing position. It can be that the cut-off air flow forming unit includes: a gas supply module for supplying the gas to the gas supply port; and a gas discharge module for adjusting the discharge amount of the gas discharged through the gas discharge port.

[0013] It can be that the showerhead includes a shower plate. A plurality of process gas ejection holes penetrate through the shower plate, and a cavity communicating with the plurality of process gas ejection holes is formed inside the shower plate. The cut-off air flow forming unit forms the cut-off air flow in the cavity.

[0014] It can be that the shower plate includes at least one partition wall that divides the cavity into a plurality of cut-off spaces communicating with the plurality of process gas ejection holes according to the area of the shower plate. The cut-off air flow forming unit separately forms the cut-off air flow in the plurality of cut-off spaces.

[0015] It can be that the partition wall is provided to divide the cavity in the circumferential direction.

[0016] It can be that the shower plate is formed to have a gas supply port and a gas discharge port respectively communicating with the plurality of cut-off spaces. The cut-off air flow forming unit includes: a gas supply module for supplying the gas of the cut-off air flow to the gas supply port; and a gas discharge module for adjusting the discharge amount of the gas discharged through the gas discharge port. It can be that the gas discharge module operates in such a way that if the discharge of the gas through the gas discharge port is kept cut off and the gas is supplied to a selected one of the plurality of cut-off spaces by the gas supply module, the gas is allowed to be discharged from the selected cut-off space at intervals.

[0017] It can be that the showerhead assembly according to an embodiment of the present invention forms the cut-off air flow in a selected one of the plurality of cut-off spaces to adjust the distribution of the process gas in the substrate processing space.

[0018] The showerhead may include a shower plate having a plurality of process gas injection holes, and may be configured to have a buffer space into which the process gas is introduced and provided to communicate with the plurality of process gas injection holes, and the cut-off gas flow forming unit forms the cut-off gas flow in the buffer space. The showerhead may be configured such that the cut-off gas flow passes through the buffer space.

[0019] The shower plates may be provided in plurality, and the plurality of shower plates may be stacked such that the plurality of process gas injection holes overlap with each other, and each may include at least one partition wall that divides the cavity into a plurality of cut-off spaces defined in the circumferential direction, the cut-off spaces being disposed in different regions, and the cut-off gas flow forming unit separately forms the cut-off gas flow in the cut-off spaces of the plurality of shower plates.

[0020] The gas of the cut-off gas flow may be an inert gas. The flow rate of the cut-off gas flow may be faster than the flow rate of the process gas.

[0021] According to an embodiment of the present invention, a substrate processing apparatus may be provided, the substrate processing apparatus including: a process chamber that provides a substrate processing space; a substrate support unit that supports a substrate in the substrate processing space; a showerhead that ejects a process gas from a process gas supply unit into the substrate processing space; a plasma source that generates plasma from the process gas supplied into the substrate processing space; and a cut-off gas flow forming unit that forms a cut-off gas flow flowing in a direction intersecting with the ejection direction of the process gas inside the showerhead to cut off the ejection of the process gas.

[0022] In the substrate processing apparatus according to an embodiment of the present invention, the showerhead may include a shower plate having a plurality of process gas injection holes, and may have a buffer space into which the process gas is introduced and provided to communicate with the plurality of process gas injection holes, and may be configured such that the cut-off gas flow passes through the inside of the showerhead.

[0023] In addition, in the substrate processing apparatus according to an embodiment of the present invention, the shower plate may form a cavity inside that communicates with the plurality of process gas injection holes, and may include at least one partition wall that divides the cavity into a plurality of cut-off spaces that communicate with the plurality of process gas injection holes according to the region of the shower plate, and the cut-off gas flow forming unit separately forms the cut-off gas flow in the plurality of cut-off spaces. The partition wall may be provided to define the cavity in the circumferential direction.

[0024] According to an embodiment of the present invention, a substrate processing apparatus can be provided. The substrate processing apparatus includes: a process chamber providing a substrate processing space; a substrate support unit supporting a substrate in a lower region of the substrate processing space; a showerhead spraying process gas from an upper region of the substrate processing space to the substrate supported by the substrate support unit from a process gas supply unit; a plasma source generating plasma from the process gas supplied into the substrate processing space; and a cut-off air flow forming unit forming a cut-off air flow flowing at a faster flow rate than the process gas in a direction orthogonal to the spraying direction of the process gas inside the showerhead to cut off the spraying of the process gas. The showerhead includes a shower plate having a plurality of process gas spray holes and is configured to have a buffer space into which the process gas is introduced and provided to communicate with the plurality of process gas spray holes. The shower plate forms cavities communicating with the plurality of process gas spray holes inside, and includes at least one partition wall dividing the cavities into a plurality of cut-off spaces defined in a circumferential direction, and is formed to have a gas supply port and a gas discharge port respectively communicating with the plurality of cut-off spaces. The cut-off air flow forming unit is configured to separately supply the gas of the cut-off air flow to the gas supply port and separately adjust the discharge amount of the gas discharged through the gas discharge port. The gas of the cut-off air flow is an inert gas.

[0025] The means for solving the problem will be made clearer and more distinct by the embodiments, drawings, etc. described below. In addition, various means other than those mentioned below may be additionally suggested.

[0026] According to an embodiment of the present invention, it is possible to precisely and accurately control the amount of process gas supplied to the substrate processing space during the execution of the substrate processing process. In addition, according to an embodiment of the present invention, it is possible to adjust the distribution of the process gas in the substrate processing space during the execution of the substrate processing process. Therefore, it is possible to ensure further improved precision, uniformity, efficiency, etc. of the substrate processing.

[0027] The effects of the invention are not limited to this, and those of ordinary skill in the art can clearly understand other effects not mentioned from this specification and the accompanying drawings. Description of the Drawings

[0028] Figure 1 It is a structural diagram showing a substrate processing apparatus according to an embodiment of the present invention.

[0029] Figure 2 It shows Figure 1 The structural diagram of the substrate support assembly shown.

[0030] Figure 3 It shows Figure 1 The structural diagram of the showerhead assembly shown.

[0031] Figure 4 shows Figure 3 a cross-sectional perspective view of the shower plate shown.

[0032] Figures 5 to 8 shows Figure 3 the structure and operation of the showerhead assembly shown.

[0033] Figure 9 is a Figure 3 cross-sectional view mainly showing a modified example of the showerhead assembly shown.

[0034] (Description of reference numerals)

[0035] 5: Substrate

[0036] 10: Substrate support assembly

[0037] 100: Process chamber

[0038] 500: Cut-off air flow forming unit

[0039] 510: Gas supply module

[0040] 520: Gas discharge module

[0041] 600: Showerhead

[0042] 610: Shower plate

[0043] 611: Process gas injection hole

[0044] 612: Cavity

[0045] 613: Partition

[0046] 620: Support member

[0047] 630: Buffer space

[0048] 650: Process gas supply unit Detailed implementation manners

[0049] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings so that those with ordinary knowledge in the technical field to which the present invention pertains can easily implement it. However, the present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0050] When describing the embodiments of the present invention, when it is determined that the specific description of relevant well-known functions or structures unnecessarily confuses the gist of the present invention, the specific description thereof is omitted, and parts having similar functions and roles are denoted by the same reference numerals in all the drawings.

[0051] At least a part of the terms used in the specification is defined in consideration of the functions in the present invention, and thus may vary depending on the user, operator's intention, convention, etc. Therefore, the terms should be interpreted based on the content of the entire specification. In addition, in the specification, when it is said to include a certain component, unless there is a specifically contrary description, it means that other components may also be included rather than excluding other components. Moreover, when it is said that a certain part is connected (or coupled) to another part, it includes not only the case of direct connection (or coupling) but also the case of indirect connection (or coupling) with other parts interposed therebetween.

[0052] On the other hand, in the drawings, for ease of understanding, the size or shape of the components, the thickness of the lines, etc. may be presented somewhat enlarged.

[0053] The shower head assembly for a substrate processing apparatus according to the present invention can be used to perform etching, ashing, evaporation, etc. as a substrate processing process. Embodiments of the present invention are centered on the case where the substrate is a circular wafer and the substrate processing apparatus having a shower head is a dry etcher that performs an etching process using plasma.

[0054] The overall structure of the substrate processing apparatus according to an embodiment of the present invention is shown in Figure 1 . The substrate processing apparatus according to an embodiment of the present invention is configured to perform an etching process using plasma as a process for the substrate. Referring to Figure 1 , specifically, the substrate processing apparatus according to an embodiment of the present invention includes a process chamber 100, a substrate support assembly 10, a shower head 600, a process gas supply unit 650, an electromagnetic field forming unit (plasma source), and a baffle unit 700. To perform the substrate processing process, the substrate support assembly 10 supports the substrate 5. Moreover, the process gas supply unit 650 supplies the process gas into the interior (substrate processing space) of the process chamber 100 using the shower head 600. Moreover, the electromagnetic field forming unit forms an electromagnetic field inside the process chamber 100 to excite the process gas supplied into the interior of the process chamber 100 into a plasma state.

[0055] The process chamber 100 is configured to have a substrate processing space 111 that can be cut off from the outside. The substrate 5 can be processed by plasma in the substrate processing space 111 when performing a substrate processing process. The process chamber 100 includes a chamber body 110. The substrate processing space 111 is formed inside the chamber body 110. The chamber body 110 can be provided by metal and can be grounded. For example, the material of the chamber body 110 can be aluminum (Al).

[0056] The chamber body 110 has a substrate inlet / outlet 112 that communicates with the substrate processing space 111. As an example, the substrate inlet / outlet 112 can be provided on the wall of the chamber body 110. The substrate 5 to be processed is carried into the substrate processing space 111 inside the chamber body 110 from the outside of the chamber body 110 through the substrate inlet / outlet 112. The processed substrate 5 is carried out from the substrate processing space 111 to the outside of the chamber body 110. Such a substrate inlet / outlet 112 is opened and closed by an inlet / outlet opening / closing unit 120.

[0057] The chamber body 110 has an exhaust port 113 that communicates with the substrate processing space 111. The exhaust port 113 is provided on the bottom surface of the chamber body 110. An exhaust unit 130 that performs an exhaust function is connected to the exhaust port 113. By the exhaust function of the exhaust unit 130, the substrate processing space 111 can be depressurized and a substrate processing process can be performed in a vacuum atmosphere. Moreover, by-products generated during the execution of the substrate processing process, gases remaining in the substrate processing space 111, etc. can be discharged to the outside. For example, the exhaust unit 130 can include an exhaust line connected to the exhaust port 113 and a vacuum pump connected to the exhaust line.

[0058] The process chamber 100 further includes a liner 140 provided on the inner surface of the chamber body 110. The liner 140 can protect the inner surface of the chamber body 110 that defines the substrate processing space 111 to make it safe. That is, by the liner 140, it is possible to prevent the inner surface of the chamber body 110 from being damaged by by-products generated during the execution of the substrate processing process, gases remaining in the substrate processing space 111, etc. For example, the liner 140 can be provided along the inner wall of the chamber body 110, and an opening that communicates with the substrate inlet / outlet 112 and allows the carrying in and out of the substrate 5 can be provided in a portion corresponding to the substrate inlet / outlet 112.

[0059] The substrate support assembly 10 is shown in Figure 2 . The substrate support assembly 10 is provided inside the chamber body 110. More specifically, the substrate support assembly 10 supports the substrate 5 in the substrate processing space 111 and is thus disposed in the lower region of the substrate processing space 111. Refer to Figure 1 and Figure 2, such a substrate support assembly 10 includes a substrate chuck 11, a focus ring 12, a lower cover 13, and an insulating member 14. The substrate chuck 11 constitutes a substrate support unit.

[0060] The substrate chuck 11 is an electrostatic chuck (ESC). The electrostatic chuck 11 includes a chuck body 200 for clamping the substrate 5 with electrostatic force, a chuck base 300 supporting the chuck body 200 on the lower side, and a heat transfer layer 400 between the upper chuck body 200 and the lower chuck base 300.

[0061] The chuck body 200 is provided with a support upper surface for placing the substrate 5 and is mounted on the chuck base 300. The chuck base 300 includes a cooling element (refer to reference numeral 305) for adjusting the temperature of the substrate 5 on the chuck body 200 by adjusting the temperature of the chuck body 200 during the execution of the substrate processing process. The heat transfer layer 400 is a silicone-based bonding layer containing silicone, which can bond the chuck body 200 and the chuck base 300 to each other and perform heat transfer between the chuck body 200 and the chuck base 300.

[0062] The chuck body 200 can be provided by a non-conductive material. For example, the chuck body 200 can be provided as a disk-shaped body having a support upper surface and a predetermined thickness through a dielectric substance. The chuck body 200 includes a chuck electrode 210 and a heating element (refer to reference numeral 220).

[0063] The chuck electrode 210 is provided inside the chuck body 200. That is, the chuck electrode 210 is buried in the chuck body 200. The chuck power supply 251 is electrically connected to the chuck electrode 210 through a chuck power line 252. The chuck power supply 251 includes a DC power supply. A chuck power switch 253 is applied between the chuck electrode 210 and the chuck power supply 251. The chuck power switch 253 can be provided on the chuck power line 252. Moreover, the chuck electrode 210 and the chuck power supply 251 can form or release an electrical connection between each other through the on and off operations of the chuck power switch 253. When the chuck power switch 253 is turned on, an electrostatic force is generated between the substrate 5 and the chuck electrode 210. During the execution of the substrate processing process, the substrate 5 can be clamped to the chuck body 200 due to the electrostatic force thus generated.

[0064] The heating element is the heater 220. The heater 220 is provided inside the chuck body 200. The heater 220 can be disposed below the chuck electrode 210. The heater power supply 261 is electrically connected to the heater 220 through the heater power line 262. The heater 220 can be configured to impede the current from the heater power supply 261 to generate high-temperature heat. For example, the heater 220 can include a coil formed in a spiral shape. The heater power switch 263 is applied between the heater 220 and the heater power supply 261. The heater power switch 263 can be provided on the heater power line 262. The heater 220 and the heater power supply 261 can form or release an electrical connection with each other through the on / off operation of the heater power switch 263. When performing a substrate processing process, if the heater power switch 263 is in the on state, heat is generated from the heater 220. The generated heat is transferred to the substrate 5 through the chuck body 200, and the substrate 5 can be maintained at the temperature required for the substrate processing process by the transferred heat.

[0065] The chuck base 300 includes a conductive material having excellent heat and electrical transfer properties. As an example, the material of the chuck base 300 is metal, and specifically, it can be aluminum. The high-frequency power supply 351 is electrically connected to the chuck base 300 through the high-frequency power line 352. As an example, the high-frequency power supply 351 can be an RF power supply. The high-frequency power switch 353 is applied between the chuck base 300 and the high-frequency power supply 351. The high-frequency power switch 353 can be provided on the high-frequency power line 352, and the chuck base 300 and the high-frequency power supply 351 can be electrically connected or disconnected from each other through the on / off operation of the high-frequency power switch 353. If the operating state of the high-frequency power switch 353 is on, high-frequency power from the high-frequency power supply 351 is supplied to the chuck base 300. Thus, the chuck base 300 can function as a lower electrode constituting an electromagnetic field forming unit.

[0066] The cooling element is applied inside the chuck base 300 and provided with a cooling flow path 305 for circulating a cooling fluid. The electrostatic chuck 11 including the chuck base 300 can be provided with a circular structure corresponding to the substrate (wafer), and the cooling flow path 305 can be formed in an arc shape. The cooling fluid can be a liquid. As an example, the cooling fluid can be cooling water. The cooling fluid is supplied into the cooling flow path 305 at a set pressure by the cooling fluid supply unit. The cooling fluid supply unit includes a cooler (not shown), a cooling fluid supply source 361, a cooling fluid supply line 362, and an on-off valve 363.

[0067] The cooler cools the cooling fluid to a set temperature. As an example, the set temperature can be a temperature lower than room temperature. The cooler can be provided at the cooling fluid supply source 361 to cool the cooling fluid in the cooling fluid supply source 361 or provided on the cooling fluid supply line 362 to cool the cooling fluid flowing along the cooling fluid supply line 362. The cooling fluid supply source 361 is connected to the cooling flow path 305 through the cooling fluid supply line 362. Such a cooling fluid supply source 361 can be configured to provide a storage space for storing the cooling fluid therein and supply the stored cooling fluid to the cooling flow path 305 at a set pressure through the cooling fluid supply line 362. An on-off valve 363 is provided on the cooling fluid supply line 362, which can open and close the cooling fluid supply line 362 and control the flow rate of the cooling fluid flowing along the cooling fluid supply line 362. Although not shown, the cooling fluid supply unit further includes a cooling fluid recovery line for recovering the cooling fluid from the cooling flow path 305 into the cooling fluid supply source 361.

[0068] When performing a substrate processing process, the cooling fluid is cooled to a set temperature by the cooler, supplied to the cooling flow path 305 at a set pressure through the cooling fluid supply source 361, and cools the chuck base 300 by flowing along the cooling flow path 305 at a predetermined flow rate and conducting heat with the chuck base 300. Moreover, the cooled chuck base 300 cools the chuck body 200 and the substrate 5 placed on the support surface of the chuck body 200. Thus, the substrate processing apparatus according to an embodiment of the present invention can use the cooling fluid to maintain the substrate 5 at the temperature required for the substrate processing process. During this process, the chuck body 200 and the chuck base 300 can conduct heat through the heat transfer layer 400.

[0069] The chuck body 200 is configured to have a plurality of upper supply paths 201 for supplying a heat-conducting fluid to the lower surface of the substrate 5 placed on the support surface. These upper supply paths 201 are arranged to be spaced apart from each other and are formed in a shape that penetrates the chuck body 200 in the vertical direction. The chuck base 300 is configured to have a plurality of lower supply paths 301 connected to the upper supply paths 201 and a distribution flow path 302 connecting these lower supply paths 301. The lower supply paths 301 can be provided in a shape extending from the inside of the chuck base 300 to the upper surface of the chuck base 300 respectively, and are provided with the same number as the upper supply paths 201 and at positions corresponding to the upper supply paths 201 to be respectively connected to the upper supply paths 201. The lower ends of the lower supply paths 301 can be connected to each other through the distribution flow path 302. For example, the lower supply paths 301 and the distribution flow path 302 can be arranged above the cooling flow path 305 inside the chuck base 300. Although not shown, a sealing member for providing airtightness can be interposed between each of the upper supply paths 201 and the lower supply paths 301. As an example, the sealing members can be respectively provided at the upper ends of the lower supply paths 301.

[0070] The heat-conductive fluid supply unit supplies heat-conductive fluid to the distribution flow path 302. The heat-conductive fluid may include an inert gas. For example, the inert gas may include helium (He). The heat-conductive fluid supply unit includes a heat-conductive fluid supply source 371, a heat-conductive fluid supply line 372, and an opening / closing valve 373. The heat-conductive fluid supply source 371 is connected to the distribution flow path 302 through the heat-conductive fluid supply line 372. When performing a substrate processing process, if the substrate 5 is clamped by the chuck body 200, the heat-conductive fluid supply source 371 operates to supply heat-conductive fluid and supply the heat-conductive fluid to the distribution flow path 302 through the heat-conductive fluid supply line 372. The heat-conductive fluid is sequentially supplied to the lower surface of the substrate 5 via the lower supply path 301 and the upper supply path 201. The heat-conductive fluid supplied to the lower surface of the substrate 5 can conduct heat between the substrate 5 and the chuck body 200. The opening / closing valve 373 of the heat-conductive fluid supply unit is provided on the heat-conductive fluid supply line 372, can open and close the heat-conductive fluid supply line 372, and can control the flow rate of the heat-conductive fluid supplied to the distribution flow path 302.

[0071] The chuck body 200 is formed to have a size of the supporting upper surface for supporting the substrate 5 smaller than the size (diameter) of the substrate 5, and the substrate 5 supported by the chuck body 200 can have its edge region protruding outward from the chuck body 200. The focusing ring 12 is disposed around the chuck body 200. The focusing ring 12 is provided to have an inner upper surface portion and an outer upper surface portion. The outer upper surface portion is higher than the inner upper surface portion, and the inner upper surface portion has the same height as the supporting upper surface of the chuck body 200. In the focusing ring 12, the inner upper surface portion can support the edge region of the substrate 5 on the chuck body 200 that is separated from the supporting upper surface of the chuck body 200, and the outer upper surface portion can surround the substrate 5 on the chuck body 200. Through such a focusing ring 12, the electromagnetic field is controlled so that the density of the plasma is uniformly distributed in all regions of the substrate 5, so that the plasma can be uniformly formed in all regions of the substrate 5 and the substrate 5 can be etched more uniformly.

[0072] The lower cover 13 constitutes the lower end portion of the substrate support assembly 10 and is provided in a state of being spaced upward from the bottom surface of the chamber body 110. The lower cover 13 can form an upwardly open space inside, and the bottom surface is provided with a metal material.

[0073] The insulating member 14 is provided to cover the open upper portion of the lower cover 13 between the electrostatic chuck 11 and the lower cover 13 and insulate the chuck base 300 and the lower cover 13. The insulating member 14 may include an insulator for electrical insulation.

[0074] The showerhead 600 is disposed on the ceiling side of the chamber body 110, configured to face the electrostatic chuck 11, and ejects the process gas from the process gas supply unit 650 at a predetermined pressure to supply the process gas to the substrate processing space 111. The showerhead 600 includes a disk-shaped shower plate 610 and a cylindrical support member 620.

[0075] The shower plate 610 can be located at a height spaced downward from the ceiling of the chamber body 110. The shower plate 610 has a plurality of process gas ejection holes 611 for ejecting the process gas downward. These process gas ejection holes 611 are formed to penetrate the shower plate 610 in the vertical direction (up and down direction) across the entire surface of the shower plate 610, and are provided in a quantity and pattern capable of uniformly supplying and distributing the process gas to the substrate processing space 111. The shower plate 610 can be provided by metal, and is electrically connected to a high-frequency power supply or grounded to function as an upper electrode constituting the electromagnetic field forming unit.

[0076] The support member 620 can be provided by a non-metallic material. The support member 620 can support the edge portion of the shower plate 610 in a state of being mounted on the ceiling of the chamber body 110. The support member 620 is provided to cut off the periphery between the ceiling of the chamber body 110 and the upper surface of the shower plate 610.

[0077] The space inside the showerhead 600 defined by the shower plate 610 and the support member 620 in the showerhead 600 is a buffer space 630 into which the process gas from the process gas supply unit 650 is introduced and which is in communication with the process gas ejection holes 611.

[0078] The process gas supply unit 650 supplies the process gas required for the substrate processing process to the showerhead 600 when performing the substrate processing process. The process gas supply unit 650 can include a process gas supply source 660, a process gas supply nozzle 670, a process gas supply line 680, and a flow control valve 690. The process gas supply source 660 can be connected to the process gas supply nozzle 670 through the process gas supply line 680, and supplies the process gas to the process gas supply nozzle 670 at a predetermined pressure. The process gas supply nozzle 670 can be disposed on the ceiling of the chamber body 110 and is connected to the showerhead 600 to supply the process gas to the buffer space 630 inside the showerhead 600. The flow control valve 690 is provided on the process gas supply line 680. The flow rate of the process gas sequentially supplied to the showerhead 600 through the process gas supply line 680 and the process gas supply nozzle 670 can be controlled by the flow control valve 690.

[0079] The electromagnetic field forming unit, together with the showerhead 600 and the process gas supply unit 650, constitutes a plasma generator. The electromagnetic field forming unit includes an upper electrode and a lower electrode disposed vertically within the substrate processing space 111, and is configured to generate plasma by the CCP (capacitive coupled plasma) method. As mentioned above, the upper electrode can be provided as the shower plate 610, and the lower electrode can be provided as the chuck base 300. Alternatively, the electromagnetic field forming unit can be configured to generate plasma by the ICP (inductively coupled plasma) method, and for this purpose, an antenna can be included.

[0080] The baffle unit 700 includes a baffle. The baffle can be provided along the periphery of the substrate support assembly 10 and disposed between the inner wall of the chamber body 110 and the circumference of the electrostatic chuck 11. The baffle is formed with holes through which the process gas passes. The process gas supplied to the substrate processing space 111 can pass through the holes of the baffle for the process gas and be discharged to the exhaust port 113. The flow of the process gas in the substrate processing space 111 can be controlled according to the shape of the baffle and the holes for the process gas.

[0081] Figures 3 to 8 The structure, operation, etc. of the showerhead assembly including the showerhead 600 are shown. Refer to Figure 3 , the substrate processing apparatus according to an embodiment of the present invention further includes a cut-off gas flow forming unit 500 that forms a cut-off gas flow flowing at a speed faster than the process gas in a horizontal direction orthogonal to the ejection direction of the process gas inside the showerhead 600 to cut off the ejection of the process gas. The cut-off gas flow forming unit 500 and the showerhead 600 constitute the showerhead assembly.

[0082] The cut-off gas flow forming unit 500 forms a cut-off gas flow with a predetermined thickness using an inert gas (e.g., nitrogen (N2)), and the showerhead 600 is configured such that the cut-off gas flow passes through the inside of the showerhead 600 in the horizontal direction. Specifically, the showerhead 600 is configured such that the cut-off gas flow passes through the inside of the shower plate 610 in the horizontal direction.

[0083] The cross-sectional form of the shower plate 610 observed from the front is shown in Figure 4 in a perspective view as an example. Refer to Figure 4 , the shower plate 610 forms cavities 612 extending in the horizontal direction and communicating with the process gas ejection holes 611 inside, and the cut-off gas flow forming unit 500 forms a cut-off gas flow in the cavities 612 of the shower plate 610.

[0084] The spray plate 610 includes at least one partition wall 613 that defines a cavity 612 therebetween. The partition wall 613 is provided to divide the cavity 612 into a plurality of cut-off spaces 612a, 612b that communicate with the process gas injection holes 611 according to the regions of the spray plate 610. The cut-off air flow forming unit 500 is configured to separately form a cut-off air flow in the cut-off spaces 612a, 612b of the cavity 612.

[0085] The partition wall 613 is formed with a circular structure, and the spray plate 610 is divided into a plurality of regions along the circumferential direction to provide concentric cut-off spaces 612a, 612b that communicate with the process gas injection holes 611 according to the regions of the spray plate 610.

[0086] The cross-sectional form of the spray plate 610 observed from the front is shown in Figure 6 and Figure 8 as an example. As an example, one partition wall 613 may be provided. Referring to Figure 6 and Figure 8 , one partition wall 613 may be configured to divide the spray plate 610 into a central region including the process gas injection holes in the central portion and a peripheral region including the process gas injection holes in the peripheral portion, and define the cavity 612 as a central cut-off space 612a that communicates with the process gas injection holes in the central region of the spray plate 610 and a peripheral cut-off space 612b that communicates with the process gas injection holes in the peripheral region of the spray plate 610. As another example, two partition walls 613 may be provided. The two partition walls may be configured to divide the cavity 612 into a central cut-off space, a peripheral cut-off space, and an intermediate cut-off space between the central cut-off space and the peripheral cut-off space.

[0087] Referring to Figure 6 and Figure 8 , the spray plate 610 is provided with gas supply ports 614i, 615i for supplying the gas of the cut-off air flow and gas discharge ports 614o, 615o for discharging the gas of the cut-off air flow.

[0088] The gas of the cut-off air flow is supplied to the cut-off spaces 612a, 612b through the gas supply ports 614i, 615i and discharged from the cut-off spaces 612a, 612b through the gas discharge ports 614o, 615o. Of course, for this purpose, the gas supply ports 614i, 615i and the gas discharge ports 614o, 615o are provided to communicate with the cut-off spaces 612a, 612b respectively.

[0089] The gas supply ports 615i and the gas discharge ports 615o that communicate with the outermost cutting spaces 612a and 612b in the concentric circle structure are formed to penetrate the spray plate 610 horizontally on the sides respectively, and are arranged facing each other in order to naturally guide and maintain a constant the horizontal flow of the gas in the cut-off air flow. The gas supply ports 614i and the gas discharge ports 614o that communicate with the inner cutting spaces in the concentric circle structure of the cutting spaces 612a and 612b are formed to penetrate the partition wall 613 horizontally on the sides respectively, and are arranged facing each other in order to naturally guide and maintain a constant the horizontal flow of the gas in the cut-off air flow.

[0090] Refer to Figure 3 , Figure 5 and Figure 7 , the cut-off air flow forming unit 500 includes a gas supply module 510 that supplies the gas of the cut-off air flow to the gas supply ports 614i and 615i, and a gas discharge module 520 that adjusts the discharge amount of the gas discharged through the gas discharge ports 614o and 615o.

[0091] The gas supply module 510 may include a gas supply source 511, a plurality of gas supply lines 512, a plurality of on-off valves 513, and a pressure controller 514.

[0092] The gas supply source 511 is connected to the gas supply ports 614i and 615i through the gas supply lines 512. The gas supply source 511 may provide a space for storing gas. The gas supply source 511 may supply the gas at a predetermined pressure to form a cut-off air flow flowing at a set flow rate (a flow rate faster than the flow rate of the process gas) in the cutting spaces 612a and 612b. The gas supply lines 512 are respectively connected to the gas supply ports 614i and 615i. The gas supply line among the gas supply lines 512 that is connected to the gas supply port 614i located within the spray plate 610 may penetrate the spray plate 610 in a form that takes into account the smooth flow of the process gas, the smooth formation of the air flow, etc. The on-off valves 513 of the gas supply module 510 are respectively formed in the gas supply lines 512, can open and close the gas supply lines 512, and can control the flow rate of the gas supplied along the gas supply lines 512. The pressure controller 514 can receive the gas from the gas supply source 511 to control the pressure of the gas, and can supply the gas with the adjusted pressure to the gas supply lines 512.

[0093] The gas discharge module 520 may include a suction force generating source 521, a plurality of gas discharge lines 522, and a plurality of on-off valves 523.

[0094] The suction force generating source 521 is connected to the gas discharge ports 614o and 615o through the gas discharge line 522. The suction force generating source 521 may include a suction fan or a suction pump that generates a predetermined suction force. The suction force generating source 521 can promote the discharge speed of the gas from the cut-off spaces 612a and 612b by using the suction force, thereby suppressing the phenomenon that the flow rate of the cut-off air flow decreases in the cut-off spaces 612a and 612b. The gas discharge line 522 is connected to the gas discharge ports 614o and 615o respectively. The gas discharge line connected to the gas discharge port 614o located in the spray plate 610 in the gas discharge line 522 may penetrate the spray plate 610 in a form that takes into account the smooth flow of the process gas, the smooth formation of the air flow, etc. The on-off valves 523 of the gas discharge module 520 are respectively provided in the gas discharge line 522, can open and close the gas discharge line 522, and can control the flow rate of the gas discharged along the gas discharge line 522 as needed. According to implementation conditions, etc., the gas discharge module 520 can be configured by removing the suction force generating source 521.

[0095] Through the nozzle assembly as observed above, when performing the substrate processing process, gas is supplied to all the cut-off spaces 612a and 612b of the spray plate 610, and a cut-off air flow is formed to cut off the discharge of the process gas through the process gas spray holes 611 of the spray plate 610, so that the supply of the process gas from the substrate processing space can be immediately interrupted.

[0096] In addition, while maintaining the state where the process gas supply unit 650 supplies the process gas, gas is supplied to all the cut-off spaces 612a and 612b to form a cut-off air flow, and then the supply of the gas from the cut-off spaces 612a and 612b is interrupted, and the cut-off air flow is removed from the cut-off spaces 612a and 612b, so that the supply of the process gas from the substrate processing space can be immediately started. Moreover, when performing the substrate processing process, the supply and interruption of the gas to all the cut-off spaces 612a and 612b are repeated in this way (that is, the supply and interruption of the process gas are repeated), so that the processing speed (reaction speed) of the substrate can be controlled in a pulse form. In such a control process, in order to form the cut-off air flow with a stable thickness from the aspect of cutting off the process gas, the gas discharge module 520 operates in such a way that if gas is supplied to the cut-off spaces 612a and 612b, the gas is allowed to be discharged from the cut-off spaces 612a and 612b at an interval time from the gas supply time point.

[0097] When performing the substrate processing process, the nozzle assembly as observed above forms a cut-off air flow in the selected cut-off space in the cut-off spaces 612a and 612b, so that the distribution of the process gas in the substrate processing space 111 can be adjusted, and thus the substrate can be processed more uniformly.

[0098] Regarding this,Figure 5 and Figure 6 An example shows a state in which process gas is ejected through process gas ejection holes 611 disposed on opposite edge sides in the shower plate 610. Figure 7 and Figure 8 An example shows a state in which process gas is ejected through process gas ejection holes 611 disposed on opposite central sides in the shower plate 610.

[0099] Figure 9 A modified example of the nozzle assembly is shown. Refer to Figure 9 , different from what was observed previously, the nozzle of the nozzle assembly can be configured to have a plurality of shower plates 610A, 610B.

[0100] The plurality of shower plates 610A, 610B can be stacked so that the process gas ejection holes 611 overlap each other. In addition, the plurality of shower plates 610A, 610B can be configured such that the regions occupied by the defined cut-off spaces 612a, 612b are different from each other or the sizes of the occupied regions are different from each other. Of course, the cut-off air flow forming unit can separately form a cut-off air flow in the cut-off spaces 612a, 612b of such a plurality of shower plates 610A, 610B.

[0101] Through such a modified example, it is possible to more diversely adjust the amount of process gas ejected from the nozzle according to the region of the nozzle, and thereby it is possible to process the substrate more uniformly.

[0102] The present invention has been described above, but the present invention is not limited to the disclosed embodiments and the attached drawings, and those of ordinary skill in the art can make various modifications without departing from the technical concept of the present invention. In addition, the technical concepts described in the embodiments of the present invention can be implemented independently of each other or two or more of them can be combined with each other.

[0103] For example, it is described that the cut-off air flow passes through the shower plate 610 in the horizontal direction inside the nozzle 600, but the nozzle 600 can also be configured such that the cut-off air flow passes through the buffer space 630 instead of passing through the shower plate 610 in the horizontal direction inside the nozzle 600. Alternatively, it can also be that the nozzle 600 is configured such that the cut-off air flow can pass through both the shower plate 610 and the buffer space 630 in the horizontal direction inside the nozzle 600, and the cut-off air flow forming unit 500 is configured to selectively form a cut-off air flow in the shower plate 610 and the buffer space 630.

Claims

1. A nozzle assembly, comprising: A nozzle for spraying process gas into the substrate processing space; as well as The shutoff gas flow forming unit forms a shutoff gas flow in a direction intersecting with a discharge direction of the process gas inside the shower head to shut off discharge of the process gas.

2. The nozzle assembly according to claim 1, characterized in that: The nozzle is configured so that the shutoff airflow passes through an interior of the nozzle.

3. The nozzle assembly according to claim 2, characterized in that: The shower head forms a gas supply port for supplying the gas for shutting off the gas flow and a gas exhaust port for exhausting the gas for shutting off the gas flow at locations facing each other.

4. The nozzle assembly according to claim 3, characterized in that: The cut-off airflow forming unit comprises: a gas supply module, supplying the gas to the gas supply port; and The gas exhaust module adjusts the exhaust amount of the gas exhausted through the gas exhaust port.

5. The nozzle assembly according to claim 1, characterized in that: The spray head comprises a spray plate, The shower plate has a plurality of process gas spray holes extending therethrough, and a cavity communicating with the plurality of process gas spray holes is formed inside the shower plate. The shutoff airflow forming unit forms the shutoff airflow in the cavity.

6. The nozzle assembly according to claim 5, characterized in that: The shower plate includes at least one partition wall that divides the cavity into a plurality of cut-off spaces that communicate with the plurality of process gas injection holes according to the area of ​​the shower plate. The shut-off airflow forming unit forms the shut-off airflows individually in the plurality of shut-off spaces.

7. The nozzle assembly according to claim 6, characterized in that: The partition walls are provided to define the cavity in a circumferential direction.

8. The nozzle assembly according to claim 6, characterized in that: The shower plate is formed to have a gas supply port and a gas exhaust port respectively connected to the plurality of cut-off spaces. The cut-off airflow forming unit comprises: A gas supply module supplies the gas that cuts off the gas flow to the gas supply port; and The gas exhaust module adjusts the exhaust amount of the gas exhausted through the gas exhaust port.

9. The nozzle assembly according to claim 8, characterized in that: The gas exhaust module operates in such a manner that if the state of cutting off the exhaust of the gas through the gas exhaust port is maintained, the gas is supplied to the selected cutting space among the multiple cutting spaces through the gas supply module, and an interval time allows the gas to be exhausted from the selected cutting space.

10. The spray head assembly according to claim 6, characterized in that: The selected cut-off space among the plurality of cut-off spaces forms the cut-off gas flow to adjust the distribution of the process gas in the substrate processing space.

11. The nozzle assembly according to claim 1, characterized in that: The shower head includes a shower plate having a plurality of process gas spray holes, and is configured to have a buffer space into which the process gas is introduced and provided to communicate with the plurality of process gas spray holes. The cut-off airflow forming unit forms the cut-off airflow in the buffer space.

12. The spray head assembly according to claim 11, characterized in that: The nozzle is configured so that the cut-off airflow passes through the buffer space.

13. The spray head assembly according to claim 5, characterized in that: The spray plates are provided in plurality. The plurality of shower plates are stacked so that the plurality of process gas nozzles overlap each other, and each of the shower plates includes at least one partition wall for dividing the cavity into a plurality of cut-off spaces defined in a circumferential direction, wherein the cut-off spaces are arranged in different regions from each other. The shutoff airflow forming unit forms the shutoff airflow individually in the shutoff spaces of the plurality of shower plates.

14. The spray head assembly according to claim 1, characterized in that: The gas for shutting off the gas flow is an inert gas.

15. The spray head assembly according to claim 1, characterized in that: The flow rate of the shut-off gas flow is faster than the flow rate of the process gas.

16. A substrate processing device, comprising: A process chamber provides a substrate processing space; a substrate supporting unit, supporting a substrate in the substrate processing space; a showerhead, spraying a process gas from a process gas supply unit into the substrate processing space; a plasma source for generating plasma from the process gas supplied into the substrate processing space; as well as The shutoff gas flow forming unit forms a shutoff gas flow in a direction intersecting with a discharge direction of the process gas inside the shower head to shut off discharge of the process gas.

17. The substrate processing apparatus according to claim 16, wherein: The shower head includes a shower plate having a plurality of process gas injection holes, and has a buffer space into which the process gas is introduced and provided to communicate with the plurality of process gas injection holes, and is configured so that the shutoff gas flow passes through the interior of the shower head.

18. The substrate processing apparatus according to claim 17, wherein: The shower plate has a cavity formed therein which is connected to the plurality of process gas injection holes, and includes at least one partition wall which divides the cavity into a plurality of cut-off spaces connected to the plurality of process gas injection holes according to the area of ​​the shower plate. The shut-off airflow forming unit forms the shut-off airflows individually in the plurality of shut-off spaces.

19. The substrate processing apparatus according to claim 17, wherein: The partition walls are provided to define the cavity in a circumferential direction.

20. A substrate processing device, comprising: A process chamber provides a substrate processing space; a substrate supporting unit that supports a substrate in a lower region of the substrate processing space; a shower head for spraying a process gas from a process gas supply unit toward the substrate supported by the substrate support unit from an upper region of the substrate processing space; a plasma source for generating plasma from the process gas supplied into the substrate processing space; and a cut-off gas flow forming unit for forming a cut-off gas flow in a direction orthogonal to the ejection direction of the process gas at a faster flow rate than the process gas inside the nozzle to cut off the ejection of the process gas, The shower head includes a shower plate having a plurality of process gas spray holes, and is configured to have a buffer space into which the process gas is introduced and provided to communicate with the plurality of process gas spray holes. The shower plate has a cavity formed therein which is connected to the plurality of process gas nozzles, and includes at least one partition wall which divides the cavity into a plurality of cut-off spaces defined in a circumferential direction, and is formed to have a gas supply port and a gas exhaust port which are respectively connected to the plurality of cut-off spaces. The shutoff gas flow forming unit is configured to supply the shutoff gas flow to the gas supply port individually and to adjust the discharge amount of the gas discharged through the gas discharge port individually. The gas that shuts off the gas flow is an inert gas.

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