Substrate support device and arc prevention method

Abstract

The present invention provides a substrate supporting apparatus and an arc prevention method, and provides a technique for preventing arc generation by forming a flow of an arc adjustment gas on the substrate supporting apparatus and controlling a discharge voltage by adjusting the pressure of the arc adjustment gas. The substrate supporting apparatus includes: an electrostatic chuck plate on which a substrate is placed and which adsorbs the substrate by electrostatic force; an electrode plate disposed below the electrostatic chuck plate; a first arc adjustment gas flow path formed between the electrostatic chuck plate and the electrode plate; an arc adjustment gas supply unit for supplying an arc adjustment gas to the first arc adjustment gas flow path; and a control unit that adjusts the pressure of the arc adjustment gas flowing through the first arc adjustment gas flow path to prevent the occurrence of an arc.

Description

Technical Field

[0001] The present invention relates to a substrate support device and an arc prevention method, and more particularly to a technique for preventing arc generation by controlling the discharge voltage by forming the flow of an arc adjustment gas on the substrate support device and adjusting the pressure of the arc adjustment gas. Background Art

[0002] Generally, semiconductor elements are formed through a plurality of processes including a process of vapor-depositing a predetermined substance on a wafer and a process of etching the same. Each of these processes is performed in a chamber which is a closed-type container having an inherent working environment. A substrate support device which is a means generally used for fixing a wafer is provided inside the chamber so as to support the wafer loaded inside the chamber.

[0003] The substrate is placed on such a substrate support device and a vapor deposition or etching process is performed using plasma. When a conductive substance remains in the edge portion of the substrate during the execution of the plasma process, arcing occurs due to the rapid transmission of accumulated charges through the conductive substance as a medium.

[0004] In particular, on a substrate support device for substrate cooling, expansion and contraction due to temperature changes caused by the flow of a refrigerant used for cooling are generated, and as a result, changes in the distance and pressure between electrodes are induced. Due to this, arc action is induced below the electrostatic chuck plate.

[0005] Due to such arc action, not only is the substrate damaged, but there is also a problem that, if care is not taken, damage can occur to the entire process line. Summary of the Invention

[0006] The present invention is proposed to solve the problems of the prior art as described above, and a technique for preventing arc generation by controlling the discharge voltage by forming the flow of an arc adjustment gas on the substrate support device and adjusting the pressure of the arc adjustment gas will be proposed.

[0007] In particular, the problem of inducing changes in the distance and pressure between electrodes due to expansion and contraction caused by temperature changes due to the flow of a refrigerant on a substrate support device for substrate cooling and, as a result, inducing arc action below the electrostatic chuck plate will be solved.

[0008] Furthermore, a solution for preventing arc action regardless of the use of high voltage (High Power) and low frequency (Low Frequency) will be proposed.

[0009] The object of the present invention is not limited to the foregoing, and other objects and advantages of the present invention not mentioned can be understood from the following description.

[0010] It may be that the substrate support device of the present invention for solving the above problems includes: an electrostatic chuck plate on which a substrate is placed and which adsorbs the substrate by electrostatic force; an electrode plate disposed below the electrostatic chuck plate; a first arc adjustment gas flow path formed between the electrostatic chuck plate and the electrode plate; an arc adjustment gas supply unit that supplies arc adjustment gas to the first arc adjustment gas flow path; and a control unit that adjusts the pressure of the arc adjustment gas flowing in the first arc adjustment gas flow path to prevent arc generation.

[0011] Furthermore, it may be that a heat transfer medium flow path for supplying a heat transfer medium to the lower surface of the substrate and a cooling flow path for allowing a refrigerant for cooling the substrate and the electrostatic chuck plate to flow are formed in the electrostatic chuck plate.

[0012] Preferably, it may be that the arc adjustment gas supply unit supplies CDA (Clean Dry Air) as the arc adjustment gas.

[0013] Furthermore, it may be that the substrate support device further includes: an insulator plate disposed below the electrode plate; and a second arc adjustment gas flow path formed between the electrode plate and the insulator plate. The arc adjustment gas supply unit supplies arc adjustment gas to the second arc adjustment gas flow path, and the control unit adjusts the pressure of the arc adjustment gas flowing in the second arc adjustment gas flow path to prevent arc generation.

[0014] As an example, it may be that the substrate support device further includes: an arc adjustment gas line connected to the first arc adjustment gas flow path and supplying arc adjustment gas from the arc adjustment gas supply unit; and a pressure regulating valve disposed on the arc adjustment gas line to adjust the pressure of the arc adjustment gas.

[0015] Here, it may be that the pressure regulating valve includes a pressure relief valve.

[0016] Furthermore, it may be that the substrate support device further includes: a heater disposed on the arc adjustment gas line to adjust the temperature of the arc adjustment gas.

[0017] As an example, it may be that the control unit controls the pressure regulating valve and the heater based on an arc generation model to adjust the temperature of the arc adjustment gas and supply it to the first arc adjustment gas flow path, and adjusts the arc adjustment gas flowing in the first arc adjustment gas flow path to a positive pressure.

[0018] As an example, it may be that the first arc adjustment gas flow path includes a peripheral arc adjustment gas flow path formed corresponding to the peripheral region of the electrode plate, an intermediate arc adjustment gas flow path formed corresponding to the intermediate region of the electrode plate, and a central arc adjustment gas flow path formed corresponding to the central region of the electrode plate.

[0019] As an example, it may be that the substrate support device further includes: a peripheral arc adjustment gas line connected to the peripheral arc adjustment gas flow path to supply arc adjustment gas; a peripheral line pressure regulating valve disposed in the peripheral arc adjustment gas line to regulate the pressure of the arc adjustment gas; an intermediate arc adjustment gas line connected to the intermediate arc adjustment gas flow path to supply arc adjustment gas; an intermediate line pressure regulating valve disposed in the intermediate arc adjustment gas line to regulate the pressure of the arc adjustment gas; a central arc adjustment gas line connected to the central arc adjustment gas flow path to supply arc adjustment gas; and a central line pressure regulating valve disposed in the central arc adjustment gas line to regulate the pressure of the arc adjustment gas.

[0020] As an example, it may be that the control unit controls the peripheral line pressure regulating valve, the intermediate line pressure regulating valve, and the central line pressure regulating valve to regulate the pressures of the arc adjustment gases in the peripheral arc adjustment gas flow path, the intermediate arc adjustment gas flow path, and the central arc adjustment gas flow path differently.

[0021] As an example, it may be that the substrate support device further includes: a peripheral line heater disposed in the peripheral arc adjustment gas line to regulate the temperature of the arc adjustment gas; an intermediate line heater disposed in the intermediate arc adjustment gas line to regulate the temperature of the arc adjustment gas; and a central line heater disposed in the central arc adjustment gas line to regulate the temperature of the arc adjustment gas.

[0022] As an example, it may be that the control unit controls the peripheral line heater, the intermediate line heater, and the central line heater to regulate the temperatures of the arc adjustment gases in the peripheral arc adjustment gas flow path, the intermediate arc adjustment gas flow path, and the central arc adjustment gas flow path differently.

[0023] As an example, it may be that the arc adjustment gas supply unit supplies a gas containing any one selected from H2, Xe, and Kr as the arc adjustment gas.

[0024] Alternatively, it may be that an embodiment of the arc prevention method according to the present invention includes: a substrate process execution step in which, since a process is performed on a substrate placed on a substrate support device, the electrostatic chuck plate and the electrode plate of the substrate support device are repeatedly heated and cooled; an arc adjustment gas supply step in which an arc adjustment gas is supplied to a first arc adjustment gas flow path provided between the electrostatic chuck plate and the electrode plate; and an arc adjustment gas pressure adjustment step in which a control unit controls a pressure regulating valve to adjust the arc adjustment gas flowing in the first arc adjustment gas flow path to a set pressure, and an arc is prevented from occurring on the lower portion of the electrostatic chuck plate by adjusting the pressure of the arc adjustment gas.

[0025] As an example, it may be that the arc adjustment gas supply step divides regions corresponding to the peripheral region, the intermediate region, and the central region of the electrode plate and supplies the arc adjustment gas to the arc adjustment gas flow path according to each region, and the arc adjustment gas pressure adjustment step individually adjusts the pressure of each arc adjustment gas supplied to the first arc adjustment gas flow path according to each region.

[0026] As an example, it may be that the arc adjustment gas supply step adjusts the temperature of the arc adjustment gas and supplies it to the first arc adjustment gas flow path.

[0027] As an example, it may be that the arc adjustment gas supply step controls a heater by the control unit based on an arc generation model to adjust the temperature of the arc adjustment gas, and the arc adjustment gas pressure adjustment step adjusts the arc adjustment gas in the first arc adjustment gas flow path to a positive pressure by the control unit based on the arc generation model.

[0028] As an example, it may be that the arc adjustment gas supply step further includes: a step of supplying an arc adjustment gas to a second arc adjustment gas flow path formed by a gap between the electrode plate and an insulator plate, and the arc adjustment gas pressure adjustment step further includes: a step in which the control unit controls a pressure regulating valve to adjust the arc adjustment gas flowing in the second arc adjustment gas flow path to a set pressure.

[0029] According to a preferred embodiment of the substrate support device of the present invention, it may include: an electrostatic chuck plate on which a substrate is placed and which adsorbs the substrate by electrostatic force; an electrode plate disposed below the electrostatic chuck plate; a first arc adjustment gas flow path formed between the electrostatic chuck plate and the electrode plate and including a peripheral arc adjustment gas flow path corresponding to the peripheral region of the electrode plate, a middle arc adjustment gas flow path corresponding to the middle region of the electrode plate, and a central arc adjustment gas flow path corresponding to the central region of the electrode plate; an insulator plate disposed below the electrode plate; a second arc adjustment gas flow path formed by the gap between the electrode plate and the insulator plate; a plurality of arc adjustment gas lines connected to each of the first arc adjustment gas flow paths and the second arc adjustment gas flow path to separately supply arc adjustment gas to each of the first arc adjustment gas flow paths and the second arc adjustment gas flow path; and a plurality of pressure regulating valves disposed on each of the arc adjustment gas lines to regulate the pressure of the arc adjustment gas; a plurality of heaters disposed on each of the arc adjustment gas lines to regulate the temperature of the arc adjustment gas; an arc adjustment gas supply unit that supplies arc adjustment gas to the plurality of arc adjustment lines; and a control unit that controls each of the pressure regulating valves based on an arc generation model to adjust each of the arc adjustment gases flowing in each of the first arc adjustment gas flow paths and the second arc adjustment gas flow paths to a positive pressure to prevent arc generation.

[0030] According to such a present invention, arc generation can be prevented by controlling the discharge voltage while forming the flow of the arc adjustment gas on the substrate support device and adjusting the pressure of the arc adjustment gas.

[0031] In particular, arc generation with respect to the electrode plate and various fittings disposed below the electrostatic chuck plate can be prevented, and condensation on the internal flow path of the substrate support device can be prevented.

[0032] The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those with ordinary knowledge in the technical field to which the present invention belongs from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 And Figure 2 Illustrates the concept of preventing arc generation according to the present invention.

[0034] Figure 3 Illustrates an embodiment of a substrate processing device to which the present invention is applied.

[0035] Figure 4 Illustrates an embodiment of the substrate support device according to the present invention.

[0036] Figure 5 Shows an embodiment of an arc adjustment gas flow path in a substrate support device according to the present invention.

[0037] Figure 6 Shows an embodiment of a pressure regulating valve applicable to a substrate support device according to the present invention.

[0038] Figure 7 Shows another embodiment of a substrate support device according to the present invention.

[0039] Figure 8 Shows a graph of Paschen's law for arc adjustment gas applicable in the present invention.

[0040] Figure 9 And Figure 10 Shows a flowchart of an embodiment of an arc prevention method according to the present invention.

[0041] (Description of reference numerals)

[0042] 1: Substrate processing device

[0043] 10: Chamber

[0044] 100: Substrate support device

[0045] 120: Electrostatic chuck plate

[0046] 130: Electrode plate

[0047] 150: Insulator plate

[0048] 160: Base plate

[0049] 310: First arc adjustment gas flow path

[0050] 350: Arc adjustment gas supply unit

[0051] 360: Second arc adjustment gas flow path

[0052] 400: Control unit Detailed description of the preferred embodiment

[0053] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or restricted by the embodiments.

[0054] To illustrate the present invention and the working advantages of the present invention and the objectives achieved by the implementation of the present invention, preferred embodiments of the present invention are exemplified below and observed with reference thereto.

[0055] First, the terms used in this application are only for the purpose of describing specific embodiments and are not intended to limit the intent of the present invention. Unless clearly indicated otherwise in the context, singular expressions may include plural expressions. Additionally, in this application, terms such as "including" or "having" should be understood to be specifying the presence of the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and do not preclude the existence or additional possibility of one or more other features, numbers, steps, operations, components, parts, or combinations thereof in advance.

[0056] When explaining the present invention, if the specific description of a related well-known structure or function is judged to obscure the gist of the present invention, its detailed description is omitted.

[0057] The present invention relates to a technique for preventing arc generation by controlling the discharge voltage by regulating the pressure of arc regulating gas while forming the flow of arc regulating gas on a substrate support device.

[0058] Figure 1 And Figure 2 Shows the concept of preventing arc generation according to the present invention.

[0059] A substrate processing apparatus using plasma places a substrate on a substrate support device that adsorbs and supports the substrate by electrostatic force and performs a process. The substrate support device may include an electrostatic chuck plate that adsorbs and supports the substrate by electrostatic force and an electrode plate disposed below the electrostatic chuck plate. The electrode plate has a refrigerant flow path for cooling the substrate and the electrostatic chuck plate, and a refrigerant can be injected into the refrigerant flow path to adjust the temperature.

[0060] As the process is executed, the substrate support device induces a sharp temperature change due to heating and cooling, and the distance and pressure between the electrodes change due to its expansion and contraction.

[0061] In particular, the temperature of the portion of the substrate support device connected to the refrigerant injected for cooling drops sharply, so the movement of electrons is restricted, which causes arc generation.

[0062] In addition, due to the diversification of the structure of the substrate processing apparatus using refrigerant, and the use of high voltage and low frequency, the possibility of arc generation is further increased.

[0063] The Figure 2 is an arc discharge curve according to Paschen's law. The Y-axis represents the discharge starting voltage, and the X-axis represents the value obtained by multiplying the pressure of the gas and the distance between the electrodes.

[0064] According to Paschen's law, if the pressure increases, the mean free path becomes shorter and the collision energy is low, so ionization is not achieved, and thus no discharge occurs.

[0065] In the present invention, a technique is proposed based on such a principle, in which an arc adjustment gas is injected below an electrostatic chuck plate in a substrate support device, and an arc is prevented from occurring below the electrostatic chuck plate by adjusting the pressure according to the gas flow.

[0066] Figure 3 An embodiment of a substrate processing apparatus to which the substrate support device according to the present invention is applied is shown.

[0067] The substrate support device 100 according to the present invention can be applied to various substrate processing apparatuses used when processing substrates such as wafers and glass for the manufacture of semiconductors, displays, and the like.

[0068] The substrate processing apparatus 1 to which the substrate support device 100 according to the present invention is applied can perform various semiconductor manufacturing processes such as etching, ashing, evaporation coating, and cleaning as substrate processing processes. However, in this embodiment, a dry etcher that performs an etching process in a substrate processing apparatus in the form of using plasma will be mainly observed.

[0069] In this embodiment, the substrate processing apparatus 1 is configured to perform an etching process as a processing process for the substrate S by using plasma. For this purpose, it may include a process chamber 10, a substrate support device 100, a process gas supply unit 30, a shower head 40, a plasma generation unit 50, and the like.

[0070] The process chamber 10 may provide a substrate processing space 13 that can be blocked from the outside, and the substrate S is processed by plasma in the substrate processing space 13. The process chamber 10 may include a chamber body 11. The chamber body 11 may be formed to have a substrate processing space 13 inside. The chamber body 11 may be made of metal. For example, the material of the chamber body 11 may be aluminum (Al). Such a chamber body 11 may be grounded.

[0071] At least one exhaust port communicating with the substrate processing space 13 may be provided at the bottom of the chamber body 11, and an exhaust unit 15 for performing an exhaust function may be connected to the exhaust port. The exhaust unit 15 may include an exhaust line connected to the exhaust port and a vacuum pump connected to the exhaust line. According to the exhaust function of the exhaust unit 15, the substrate processing space 13 can be decompressed and the substrate processing process can be performed in a vacuum atmosphere, and by-products generated during the substrate processing process or gases remaining in the substrate processing space 13 can be discharged to the outside.

[0072] The process gas supply unit 30 supplies a process gas to be provided inside the process chamber 10, and the plasma generation unit 50 forms an electromagnetic field inside the process chamber 10 to excite the process gas provided inside the process chamber 10 into a plasma state.

[0073] The shower head 40 can be disposed above the substrate processing space 13 to diffuse the process gas supplied from the process gas supply unit 30 and supply it to the substrate processing space 13.

[0074] The plasma generation unit 50 can excite the process gas in the substrate processing space 13 into a plasma state. As an example, the plasma generation unit 50 can include an antenna 51 provided above the chamber body 11, a power supply unit 55, and the like.

[0075] The antenna 51 can be disposed parallel to the electrode plate 130 of the electrostatic chuck 110 with the substrate processing space 13 therebetween. That is, an electromagnetic field is formed in the space between the two electrodes, and the process gas supplied to this space is excited into a plasma state.

[0076] The substrate support device 100 can be provided inside the chamber body 11. The substrate support device 100 can be disposed in the lower region of the substrate processing space 13 to support the substrate S. The substrate support device 100 can be located at a height spaced upward from the bottom of the chamber body 11.

[0077] The substrate support device 100 can include an electrostatic chuck 110, a base plate 160, and the like.

[0078] The electrostatic chuck 110 can include an electrostatic chuck plate 120, an electrode plate 130, and the like.

[0079] The electrostatic chuck plate 120 can support the substrate S by electrostatic clamping. The electrostatic chuck plate 120 can be surrounded by a focusing ring 140 around its edge.

[0080] The electrostatic chuck plate 120 can be located at the upper end of the electrode plate 130. The electrostatic chuck plate 120 can be provided as a disk-shaped dielectric substance. The substrate S can be placed on the upper surface of the electrostatic chuck plate 120. As an example, a wafer can be placed as the substrate.

[0081] The upper surface of the electrostatic chuck plate 120 can have a radius smaller than that of the substrate S. Therefore, the edge region of the substrate S can be located outside the electrostatic chuck plate 120. The edge of the substrate S can be placed on the upper surface of the focusing ring 140.

[0082] The focus ring 140 may be disposed in the edge region of the electrostatic chuck plate 120. The focus ring 140 may have an annular shape and is disposed along the edge of the electrostatic chuck plate 120. The outer portion of the focus ring 140 may be provided to surround the edge region of the substrate S. The focus ring 140 may control the electromagnetic field so that the density of the plasma is uniformly distributed in the entire region of the substrate S. Through this, the plasma can be uniformly formed across the entire region of the substrate S and each region of the substrate S can be etched uniformly.

[0083] The electrostatic chuck plate 120 may include an electrostatic electrode 121, a heater 125, and a supply flow path 133 inside. The supply flow path 133 may be formed to penetrate from the bottom surface to the top surface of the electrostatic chuck plate 120. A plurality of supply flow paths 133 may be formed at intervals from each other and provided as a path for supplying a heat transfer medium to the bottom surface of the substrate S.

[0084] The electrostatic electrode 121 may be electrically connected to the first power supply unit 123. The first power supply unit 123 may selectively supply a DC power supply to the electrostatic electrode 121. That is, an electrostatic force may act between the electrostatic electrode 121 and the substrate S through the power supply applied to the electrostatic electrode 121, and the substrate S may be adsorbed to the electrostatic chuck plate 120 by the electrostatic force.

[0085] The heater 125 may be located below the electrostatic electrode 121. The heater 125 may be electrically connected to the second power supply unit 127. The heater 125 may generate heat by resisting the current applied from the second power supply unit 127. The generated heat may be transferred to the substrate S through the electrostatic chuck plate 120. The substrate S may be maintained at a predetermined temperature by the heat generated from the heater 125. The heater 125 may include a coil in a spiral shape.

[0086] The electrode plate 130 may be located below the electrostatic chuck plate 120. The bottom surface of the electrostatic chuck plate 120 and the top surface of the electrode plate 130 may be bonded by an adhesive. The electrode plate 130 may be provided with an aluminum material. The electrode plate 130 may have an area corresponding to the electrostatic chuck plate 120 and be bonded to the bottom surface of the electrostatic chuck plate 120. The electrode plate 130 may form a first flow path 131 and a second flow path 135 inside.

[0087] The first flow path 131 may be provided as a path for circulating the heat transfer medium. The first flow path 131 may receive the supply of the heat transfer medium from the temperature control fluid supply unit 170 through the fluid supply block 200. As an example, the heat transfer medium may include helium (He) gas or the like.

[0088] The heat transfer medium such as helium (He) may be transferred to the supply flow path 133 through the first flow path 131 and supplied to the lower surface of the substrate S. The heat transfer medium such as helium gas may act as a medium for transferring the heat transferred from the plasma to the substrate S to the electrostatic chuck plate 120.

[0089] The second flow path 135 can be provided as a path for refrigerant circulation. The second flow path 135 can be formed below the first flow path 131. The second flow path 135 can receive the supply of the coolant from the refrigerant supply unit 190 through the fluid supply block 200.

[0090] The coolant supplied to the second flow path 135 can circulate along the second flow path 135 and cool the electrode plate 130. While being cooled, the electrode plate 130 can cool the electrostatic chuck plate 120 and the substrate S together to keep the substrate S at a predetermined temperature.

[0091] As an example, an extremely low temperature refrigerant can also be applied as the coolant, and various refrigerants can also be applied in addition.

[0092] The insulator plate 150 can be located at the lower end of the electrostatic chuck 110 to increase the electrical distance between the electrode plate 130 and the base plate 160.

[0093] The base plate 160 can be located below the insulator plate 150 to support the electrostatic chuck 110 and the insulator plate 150.

[0094] The base plate 160 can be provided with a fluid supply block 200 for supplying the temperature regulating fluid and the coolant to the electrostatic chuck 110. In the present embodiment, it is shown and described that the fluid supply block 200 is mounted on the base plate 160, but depending on the situation, the fluid supply block 200 can also be configured to contact the lower surface of the base plate 160.

[0095] A first arc adjustment gas flow path 310 can be provided between the electrostatic chuck plate 120 and the electrode plate 130. In the above Figure 3 embodiment, the first arc adjustment gas flow path 310 is only provided below the electrostatic chuck plate 120, but the first arc adjustment gas flow path 310 can extend below the focusing ring 140.

[0096] The arc adjustment gas supply unit 350 can supply the arc adjustment gas to the first arc adjustment gas flow path 310.

[0097] The control unit 400 can adjust the pressure of the arc adjustment gas flowing in the first arc adjustment gas flow path 310 to prevent the occurrence of an arc.

[0098] As an example, the arc generation conditions according to the process execution can be obtained by simulating the process execution of the substrate support device 100 or by measurement according to the actual process execution, and an arc generation model can be generated based on the obtained arc generation conditions.

[0099] The control unit 400 can prevent the occurrence of an arc by maintaining an arc generation model, determining the arc generation conditions according to the process of the substrate support device 100, and correspondingly adjusting the pressure of the arc adjustment gas flowing in the first arc adjustment gas flow path 310.

[0100] Regarding the supply and adjustment of the arc adjustment gas, Figure 4 Fig. shows an embodiment of a substrate support device according to the present invention.

[0101] The first arc adjustment gas flow path 310 can be formed by the gap between the electrostatic chuck plate 120 and the electrode plate 130.

[0102] The first arc adjustment gas flow path 310 may include a peripheral arc adjustment gas flow path 310a formed corresponding to the peripheral area of the electrode plate 130, an intermediate arc adjustment gas flow path 310b formed corresponding to the intermediate area of the electrode plate 130, and a central arc adjustment gas flow path 310c formed corresponding to the central area of the electrode plate 130.

[0103] Regarding the first arc adjustment gas flow path 310, Fig. shows an embodiment of the arc adjustment gas flow path in the substrate support device according to the present invention.

[0104] The Figure 5 is a view of the shape of the first arc adjustment gas flow path 310 from above, and the peripheral area A1, intermediate area A2, and central area A3 of the electrostatic chuck plate 120 can be divided and the peripheral arc adjustment gas flow path 310a, intermediate arc adjustment gas flow path 310b, and central arc adjustment gas flow path 310c are provided corresponding to each area.

[0105] In the peripheral arc adjustment gas flow path 310a, intermediate arc adjustment gas flow path 310b, and central arc adjustment gas flow path 310c, the arc adjustment gas can also be supplied so that the flow alternates in opposite directions. If necessary, in the peripheral arc adjustment gas flow path 310a, intermediate arc adjustment gas flow path 310b, and central arc adjustment gas flow path 310c, the arc adjustment gas can also be supplied to flow in the same direction.

[0106] The diameters of the peripheral arc adjustment gas flow path 310a, intermediate arc adjustment gas flow path 310b, and central arc adjustment gas flow path 310c are all shown to be the same, but if necessary, they can also be formed in different sizes. For example, the peripheral arc adjustment gas flow path 310a, intermediate arc adjustment gas flow path 310b, and central arc adjustment gas flow path 310c can also be formed to gradually increase the pipe diameter size in sequence.

[0107] In addition, the outer arc adjustment gas flow path 310a, the middle arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c are configured in a concentric circle form, but the number and form of the flow paths formed in each region can be variously deformed.

[0108] Furthermore, in this embodiment, the outer region, the middle region, and the central region are divided into three regions, but according to requirements, they can be divided into two regions to four or more regions, whereby the number and form of the arc adjustment gas flow paths can be changed.

[0109] Returning again to the Figure 4 , the description of this embodiment will continue.

[0110] The outer arc adjustment gas flow path 310a can be connected to the outer arc adjustment gas lines 351a and 355a, and receive the supply of arc adjustment gas through the outer arc adjustment gas lines 351a and 355a and discharge it. The outer arc adjustment gas lines 351a and 355a can include an inlet line 351a and an outlet line 355a.

[0111] A pressure regulating valve (not shown), a pump (not shown), etc. can be arranged in the inlet line 351a of the outer arc adjustment gas line to regulate the pressure of the supplied arc adjustment gas. In addition, a heater 330a can be arranged to heat the supplied arc adjustment gas.

[0112] A pressure regulating valve 320a can be arranged in the outlet line 355a of the outer arc adjustment gas line to regulate the pressure of the gas flowing through the outer arc adjustment gas flow path 310a.

[0113] The middle arc adjustment gas flow path 310b can be connected to the middle arc adjustment gas lines 351b and 355b, and receive the supply of arc adjustment gas through the middle arc adjustment gas lines 351b and 355b and discharge it.

[0114] The middle arc adjustment gas lines 351b and 355b can include an inlet line 351b and an outlet line 355b. A pressure regulating valve (not shown), a pump (not shown), etc. can be arranged in the inlet line 351b of the middle arc adjustment gas line to regulate the pressure of the supplied arc adjustment gas, and a heater 330b can be arranged to heat the supplied arc adjustment gas.

[0115] In addition, a pressure regulating valve 320b can be arranged in the outlet line 355b of the middle arc adjustment gas line to regulate the pressure of the gas flowing through the middle arc adjustment gas flow path 310b.

[0116] The central arc adjustment gas flow path 310c can be connected to the central arc adjustment gas lines 351c and 355c to receive the supply of the arc adjustment gas through the central arc adjustment gas lines 351c and 355c and discharge it. The central arc adjustment gas lines 351c and 355c may also include an inlet line 351c and an outlet line 355c. A pressure regulating valve (not shown), a pump (not shown), etc. may be arranged in the inlet line 351c to regulate the pressure of the supplied arc adjustment gas, and a heater 330c may be arranged to heat the supplied arc adjustment gas. In the outlet line 355c, a pressure regulating valve 320c can regulate the pressure of the gas flowing through the central arc adjustment gas flow path 310c.

[0117] In the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c, arc adjustment gas supply parts 350a, 350b, and 350c for supplying the arc adjustment gas may be provided.

[0118] Each of the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c may also separately constitute the arc adjustment gas supply parts 350a, 350b, and 350c, or may be combined to form one arc adjustment gas supply part.

[0119] The control unit 400 can separately adjust the pressure of the arc adjustment gas flowing in each of the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c.

[0120] As an example, the control unit 400 can control the arc adjustment gas supply parts 350a, 350b, and 350c to adjust the supply amount of the arc adjustment gas supplied to each of the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c.

[0121] As an example, the control unit 400 can control the pressure regulating valves 320a, 320b, and 320c corresponding to each of the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c to separately adjust the pressure of the arc adjustment gas flowing in the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c.

[0122] At this time, the arc adjustment gas flowing in each of the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c can be adjusted to a positive pressure, and the pressures of the arc adjustment gas flowing in the respective flow paths 310a, 310b, and 310c can be adjusted differently.

[0123] As an example, the control unit 400 can adjust the temperature of the arc adjustment gas supplied to the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c, and the temperatures of the arc adjustment gas supplied to the respective flow paths 310a, 310b, and 310c can be adjusted differently.

[0124] As the pressure regulating valves 320a, 320b, and 320c for adjusting the pressure of the arc adjustment gas flowing in the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c, various valves can be applied. Figure 6 An embodiment of the pressure regulating valve applicable to the substrate support device according to the present invention is shown.

[0125] The Figure 6 embodiment is a case where the pressure relief valve 370 is applied as the pressure control valve.

[0126] If the arc adjustment gas flowing in the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c is pressurized above the set value, the pressure relief valve 370 can operate to relieve the overpressure.

[0127] That is, it can be that the arc adjustment gas flowing in the outer arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c is adjusted to a positive pressure, and in the case of applying a very large pressure, it has an adverse effect on the stability of the substrate support device 100, and the pressure relief valve 370 can be configured so that the pressure does not rise above the set value.

[0128] If the gas flowing in the pipeline 375 is pressurized above the set value, the pressure relief valve 370 can pressurize the spring 372 while the pressure is applied to the valve seat 373, and while the pressure relief valve 370 is opened, the gas is discharged through the discharge path 377 to reduce the pressure. As an embodiment, various types of pressure relief valves can be applied.

[0129] In the present invention, the arc adjustment gas flowing through the peripheral arc adjustment gas flow path 310a, the intermediate arc adjustment gas flow path 310b, and the central arc adjustment gas flow path 310c is adjusted to a positive pressure, and the pressure can be increased to above a certain level. When an overpressure above the set value is generated by the pressure regulating valves 320a, 320b, and 320c, the pressure can be reduced.

[0130] Furthermore, in addition to the first arc adjustment gas flow path observed above, a second arc adjustment gas flow path may be additionally provided. By adjusting the pressure of the arc adjustment gas flowing through the first arc adjustment gas flow path and the second arc adjustment gas flow path, arc generation can be more effectively prevented. In this regard Figure 7 Fig. shows another embodiment of the substrate support device according to the present invention.

[0131] When describing the Figure 7 embodiment, for the parts that are repeated with the previously described embodiment, the description thereof will be omitted or briefly described.

[0132] As described above, a first arc adjustment gas flow path 310 may be provided between the electrostatic chuck plate 120 and the electrode plate 130.

[0133] In addition, a second arc adjustment gas flow path 360 may be provided between the electrode plate 130 and the insulator plate 150.

[0134] The second arc adjustment gas flow path 360 may be formed by the gap between the electrode plate 130 and the insulator plate 150.

[0135] The second arc adjustment gas flow path 360 may form a continuous flow path between the electrode plate 130 and the insulator plate 150.

[0136] In addition, similar to the structure in which the previous first arc adjustment gas flow path 310 corresponds to the peripheral region, the intermediate region, and the central region of the electrostatic chuck plate 120 and is provided according to each region, the second arc adjustment gas flow path 360 may also be divided according to the peripheral region, the intermediate region, and the central region of the electrode plate 130 and provided according to each region. Further, different from the division by region of the first arc adjustment gas flow path 310, the number and form of the second arc adjustment gas flow path 360 may also be changed.

[0137] The arc adjustment gas supply unit 350 may supply the arc adjustment gas to the first arc adjustment gas flow path 310 and the second arc adjustment gas flow path 360.

[0138] The arc adjustment gas supply section for the first arc adjustment gas flow path 310 and the arc adjustment gas supply section for the second arc adjustment gas flow path 360 may also be configured separately from each other.

[0139] The arc adjustment gas may be supplied from the arc adjustment gas supply section 350 through the arc adjustment gas line connected to the second arc adjustment gas flow path 360, and the arc adjustment gas line may be composed of an inlet line and an outlet line.

[0140] In addition, a pressure regulating valve, a pump, a heater, etc. may be arranged in the arc adjustment gas line to adjust the temperature, supply amount, pressure, etc. of the arc adjustment gas supplied to the second arc adjustment gas flow path 360.

[0141] The control section 400 may adjust the supply amount, temperature, supply pressure, pressure of the arc adjustment gas flowing inside, etc. of the arc adjustment gas in the first arc adjustment gas flow path 310 and the second arc adjustment gas flow path 360.

[0142] The control section 400 may adjust the pressure of the arc adjustment gas in the first arc adjustment gas flow path 310 and the second arc adjustment gas flow path 360 to a positive pressure based on the arc generation model generated based on the arc generation conditions, and preferably, the pressure of the arc adjustment gas in the first arc adjustment gas flow path 310 and the second arc adjustment gas flow path 360 may be adjusted differently.

[0143] The separation by region, pressure adjustment, temperature adjustment, etc. of the second arc adjustment gas flow path 360 is similar to the first arc adjustment gas flow path 310 described above, so the detailed description thereof will be omitted.

[0144] Figure 8 A graph showing Paschen's law for the arc adjustment gas applicable in the present invention is shown.

[0145] In the present invention, CDA (Clean Dry Air) may be applied as the arc adjustment gas.

[0146] As observed in the above Figure 8 Air can be the most suitable arc adjustment gas.

[0147] In addition to air, a gas containing any one of various gases selected from H2, Xe, Kr, etc. may also be used as the arc adjustment gas.

[0148] In addition, a method for preventing arc generation by the substrate support device described above is proposed in the present invention, and the arc prevention method according to the present invention will be observed through examples below.

[0149] The arc prevention method according to the present invention is implemented by the substrate support device according to the present invention described above, and thus embodiments of the substrate support device will be referred to together.

[0150] Figure 9 And Figure 10 The flowchart which shows one Embodiment about the arc prevention method based on this invention.

[0151] If the substrate is adsorbed and placed on the substrate support device 100 of the substrate processing device 1 and the substrate processing process (S110) is executed, the electrostatic chuck plate 120 and the electrode plate 130 of the substrate support device 100 are repeatedly heated and cooled.

[0152] As the process is executed, the substrate support device 100 can induce a sharp temperature change, and an arc can occur due to the expansion and contraction thereof and the change in the distance and pressure between the electrodes.

[0153] The control unit 400 can determine the state of the substrate support device 100 according to the process execution based on the arc generation model, and selectively supply the arc adjustment gas to the first arc adjustment gas flow path 310 and the second arc adjustment gas flow path 360 in order to prevent arc generation (S130).

[0154] Before supplying the arc adjustment gas to the first arc adjustment gas flow path 310, the second arc adjustment gas flow path 360, or all of them, the control unit 400 can adjust the temperature by heating the arc adjustment gas (S120).

[0155] While supplying the arc adjustment gas to the first arc adjustment gas flow path 310, the second arc adjustment gas flow path 360, or all of them, the pressure of the arc adjustment gas flowing in the first arc adjustment gas flow path 310 or the second arc adjustment gas flow path 360 can increase.

[0156] The control unit 400 can adjust the pressure of the arc adjustment gas flowing in the first arc adjustment gas flow path 310, the second arc adjustment gas flow path 360, or all of them to a positive pressure (S140).

[0157] Furthermore, when the pressure in the first arc adjustment gas flow path 310, the second arc adjustment gas flow path 360, or all of them increases above a certain level, the control unit 400 can adjust the pressure of the arc adjustment gas flowing in the first arc adjustment gas flow path 310, the second arc adjustment gas flow path 360, or all of them to within a set value range through a pressure regulating valve.

[0158] Arc generation can be prevented below the electrostatic chuck of the substrate support device 100 by adjusting the arc adjustment gas flowing in the first arc adjustment gas flow path 310, the second arc adjustment gas flow path 360, or all of the flowing arc adjustment gases to a positive pressure (S150).

[0159] Furthermore, the arc adjustment gas can be supplied by region and the pressure can be controlled. For related matters, refer to the Figure 10 for observation. The Figure 10 is the detailed process of the Figure 9 Therefore, the description of the parts that repeat the embodiments of the Figure 9 is omitted.

[0160] The first arc adjustment gas flow path 310, the second arc adjustment gas flow path 360, or all of them can be provided in each region divided by regions such as the peripheral region, the intermediate region, and the central region. The control unit 400 can individually adjust the temperature of the arc adjustment gas supplied to each region of the first arc adjustment gas flow path 310, the second arc adjustment gas flow path 360, or all of them (S121).

[0161] In addition, the control unit 400 can supply the arc adjustment gas according to each region of the first arc adjustment gas flow path 310, the second arc adjustment gas flow path 360, or all of them (S131).

[0162] The control unit 400 can adjust the pressure of the arc adjustment gas flowing in each region of the first arc adjustment gas flow path 310, the second arc adjustment gas flow path 360, or all of them to a positive pressure (S141). For a specific flow path whose pressure rises above a certain level, the pressure regulating valve can be controlled to adjust the pressure of the arc adjustment gas within the set value range.

[0163] Through the present invention like this, arc generation can be prevented by controlling the discharge voltage while forming the flow of the arc adjustment gas on the substrate support device and adjusting the pressure of the arc adjustment gas.

[0164] In particular, arc generation of the electrode plate and various fittings arranged below the electrostatic chuck plate can be prevented, and dew condensation in the internal flow path of the substrate support device can be prevented.

[0165] The above description only exemplarily illustrates the technical concept of the present invention. For those with ordinary knowledge in the technical field to which the present invention pertains, various modifications and changes are possible without departing from the essential features of the present invention. Therefore, the embodiments described in the present invention are not used to limit the technical concept of the present invention, but to illustrate the technical concept of the present invention. The technical concept of the present invention is not limited by such embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical concepts within the equivalent scope should be interpreted as being included in the scope of the claims of the present invention.

Claims

1. A substrate support device, characterized in that: include: An electrostatic chuck plate, on which the substrate is placed, and which adsorbs the substrate by electrostatic force; An electrode plate, disposed below the electrostatic chuck plate; a first arc regulating gas flow path formed between the electrostatic chuck plate and the electrode plate; an arc regulating gas supply unit for supplying arc regulating gas to the first arc regulating gas flow path; as well as The control unit adjusts the pressure of the arc adjusting gas flowing in the first arc adjusting gas flow path to prevent the occurrence of an arc.

2. The substrate support device according to claim 1, characterized in that: The electrostatic chuck plate is formed with: a heat transfer medium flow path for supplying a heat transfer medium to the bottom of the substrate; and The cooling flow path allows a refrigerant for cooling the substrate and the electrostatic chuck plate to flow.

3. The substrate support device according to claim 1, characterized in that: The arc regulating gas supply part supplies clean dry air as arc regulating gas.

4. The substrate support device according to claim 1, wherein: The substrate support device further comprises: an insulator plate, disposed below the electrode plate; and A second arc regulating gas flow path is formed between the electrode plate and the insulator plate, The arc regulating gas supply unit supplies arc regulating gas to the second arc regulating gas flow path, The control unit adjusts the pressure of the arc adjusting gas flowing in the second arc adjusting gas flow path to prevent the occurrence of an arc.

5. The substrate support device according to claim 1, wherein: The substrate support device further comprises: an arc regulating gas line connected to the first arc regulating gas flow path and supplying arc regulating gas from the arc regulating gas supply unit; and The pressure regulating valve is disposed on the arc regulating gas line to regulate the pressure of the arc regulating gas.

6. The substrate support device according to claim 5, characterized in that: The pressure regulating valve includes a pressure relief valve.

7. The substrate support device according to claim 5, characterized in that: The substrate supporting device further comprises: The heater is disposed in the arc regulating gas line to regulate the temperature of the arc regulating gas.

8. The substrate support device according to claim 7, characterized in that: The control unit controls the pressure regulating valve and the heater based on the arc generation model to regulate the temperature of the arc regulating gas and supply the arc regulating gas to the first arc regulating gas flow path, and regulates the arc regulating gas flowing in the first arc regulating gas flow path to a positive pressure.

9. The substrate support device according to claim 1, characterized in that: The first arc regulating gas flow path includes a peripheral arc regulating gas flow path formed corresponding to the peripheral area of ​​the electrode plate, an intermediate arc regulating gas flow path formed corresponding to the middle area of ​​the electrode plate, and a central arc regulating gas flow path formed corresponding to the central area of ​​the electrode plate.

10. The substrate support device according to claim 9, characterized in that: The substrate support device further comprises: a peripheral arc regulating gas line connected to the peripheral arc regulating gas flow path to supply arc regulating gas; A peripheral line pressure regulating valve, disposed on the peripheral arc regulating gas line to regulate the pressure of the arc regulating gas; an intermediate arc regulating gas line connected to the intermediate arc regulating gas flow path to supply arc regulating gas; An intermediate line pressure regulating valve, disposed in the intermediate arc regulating gas line to regulate the pressure of the arc regulating gas; a central arc regulating gas line connected to the central arc regulating gas flow path to supply arc regulating gas; and The central line pressure regulating valve is disposed in the central arc regulating gas line to regulate the pressure of the arc regulating gas.

11. The substrate support device according to claim 10, characterized in that: The control unit controls the outer line pressure regulating valve, the intermediate line pressure regulating valve, and the central line pressure regulating valve to differently regulate the pressures of the arc regulating gas in the outer arc regulating gas flow path, the intermediate arc regulating gas flow path, and the central arc regulating gas flow path.

12. The substrate support device according to claim 10, characterized in that: The substrate support device further comprises: A peripheral line heater is arranged on the peripheral arc regulating gas line to regulate the temperature of the arc regulating gas; an intermediate line heater disposed in the intermediate arc regulating gas line to regulate the temperature of the arc regulating gas; and The central line heater is disposed in the central arc regulating gas line to regulate the temperature of the arc regulating gas.

13. The substrate support device according to claim 12, characterized in that: The control unit controls the outer line heater, the middle line heater, and the central line heater to adjust temperatures of the arc regulating gas in the outer arc regulating gas flow path, the middle arc regulating gas flow path, and the central arc regulating gas flow path differently.

14. The substrate support device according to claim 1, wherein: The arc regulating gas supply unit supplies a gas containing any one selected from H 2 , Xe, and Kr as the arc regulating gas.

15. An arc prevention method, characterized in that: include: a substrate process execution step, in which an electrostatic chuck plate and an electrode plate of the substrate support device are repeatedly heated and cooled due to the process being executed on the substrate placed on the substrate support device; an arc regulating gas supplying step of supplying arc regulating gas to a first arc regulating gas flow path provided between the electrostatic chuck plate and the electrode plate; as well as In the arc regulating gas pressure regulating step, the control unit controls the pressure regulating valve to regulate the arc regulating gas flowing in the first arc regulating gas flow path to a set pressure. Arcing is prevented from occurring on the lower portion of the electrostatic chuck plate by pressure regulation of an arc regulating gas.

16. The arc prevention method according to claim 15, characterized in that: The arc regulating gas supplying step divides the regions corresponding to the peripheral region, the middle region and the central region of the electrode plate and supplies the arc regulating gas to the arc regulating gas flow path according to each region. The arc regulating gas pressure regulating step individually regulates the pressure of each arc regulating gas supplied to the first arc regulating gas flow path for each area.

17. The arc prevention method according to claim 15, characterized in that: The arc regulating gas supplying step regulates the temperature of the arc regulating gas and supplies the arc regulating gas to the first arc regulating gas flow path.

18. The arc prevention method according to claim 15, characterized in that: In the arc regulating gas supplying step, the control unit controls the heater to regulate the temperature of the arc regulating gas based on the arc generation model. In the arc regulating gas pressure regulating step, the control unit regulates the arc regulating gas in the first arc regulating gas flow path to a positive pressure based on the arc generation model.

19. The arc prevention method according to claim 15, characterized in that: The arc regulating gas supply step further comprises: supplying arc regulating gas to a second arc regulating gas flow path formed by a gap between the electrode plate and the insulator plate, The arc regulating gas pressure regulating step further comprises: The control unit controls the pressure regulating valve to regulate the arc regulating gas flowing through the second arc regulating gas flow path to a set pressure.

20. A substrate support device, characterized in that: include: An electrostatic chuck plate, on which the substrate is placed, and which adsorbs the substrate by electrostatic force; An electrode plate, disposed below the electrostatic chuck plate; a first arc regulating gas flow path formed between the electrostatic chuck plate and the electrode plate and comprising a peripheral arc regulating gas flow path formed corresponding to a peripheral region of the electrode plate, a middle arc regulating gas flow path formed corresponding to a middle region of the electrode plate, and a central arc regulating gas flow path formed corresponding to a central region of the electrode plate; An insulator plate, disposed below the electrode plate; a second arc regulating gas flow path formed by a space between the electrode plate and the insulator plate; a plurality of arc regulating gas lines connected to the first arc regulating gas flow paths and the second arc regulating gas flow paths to individually supply arc regulating gas to the first arc regulating gas flow paths and the second arc regulating gas flow paths; as well as A plurality of pressure regulating valves are arranged on each of the arc regulating gas lines to regulate the pressure of the arc regulating gas; A plurality of heaters are arranged in each of the arc regulating gas lines to regulate the temperature of the arc regulating gas; an arc regulating gas supply unit for supplying arc regulating gas to the plurality of arc regulating wires; as well as The control unit controls each of the pressure regulating valves based on the arc occurrence model to adjust each of the arc regulating gases flowing through each of the first arc regulating gas flow path and the second arc regulating gas flow path to a positive pressure to prevent arc occurrence.

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