Substrate processing apparatus and method

Abstract

A substrate processing apparatus and method are provided in which by-products can be suppressed from being deposited on a region between a focus ring and a dielectric layer included in an electrostatic chuck during a processing process of a substrate or a cleaning process of a process chamber. The substrate processing apparatus includes: an electrostatic chuck supporting a substrate; a focus ring surrounding an outer edge region of a dielectric layer included in the electrostatic chuck; and a by-product removal unit that prevents a by-product generated in a process of processing the substrate from being adsorbed or remaining in a region between the dielectric layer and the focus ring.

Description

Cross - Reference to Related Applications

[0001] This application claims priority to Korean Patent Application No. 10 - 2023 - 0195002, filed with the Korean Intellectual Property Office on December 28, 2023, and all the rights arising therefrom under 35 U.S.C. 119, the entire content of which is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to a substrate processing apparatus and method. Background Art

[0003] When processing a substrate using plasma, a fluorine - based gas, a carbon - based gas, etc. can be used as a process gas. During the plasma process, the process gas in the process chamber can combine with the thin - film material of the substrate or the coating of the component, thereby generating by - products.

[0004] After the plasma process is completed, an in - situ dry cleaning (ISD) process can be performed to remove the residual gas and by - products in the process chamber. However, even through the ISD process, it is difficult to completely remove the by - products. The incompletely removed by - products may become a source of particles or defects, thereby shortening the preventive maintenance cycle and reducing the yield of semiconductor products.

[0005] Meanwhile, since the by - products are deposited in the region between the electrostatic chuck (ESC) that supports the substrate and the focus ring around the outer edge region of the electrostatic chuck, an arc may be generated around the substrate during the ISD process, resulting in low cleaning efficiency of the process chamber. Summary of the Invention

[0006] An object of the present disclosure is to provide a substrate processing apparatus and method in which deposition of by - products in the region between the focus ring and the dielectric layer included in the electrostatic chuck can be suppressed during the substrate processing or the cleaning process of the process chamber.

[0007] The object of the present disclosure is not limited to the above - mentioned content, and those skilled in the art will clearly understand additional objects of the present disclosure not mentioned herein from the following description of the present disclosure.

[0008] A substrate processing apparatus designed to achieve the above object according to an aspect of the present disclosure includes: an electrostatic chuck for supporting a substrate; a focus ring surrounding the outer edge region of the dielectric layer included in the electrostatic chuck; and a by - product removing unit that prevents by - products generated during the process of processing the substrate from being adsorbed or remaining in the region between the dielectric layer and the focus ring.

[0009] A substrate processing apparatus designed to achieve the above object according to another aspect of the present disclosure includes: a chamber housing that provides a space for processing a substrate; a substrate support unit disposed within the chamber housing that supports the substrate by including a bottom plate, a dielectric layer, and a focus ring, wherein the dielectric layer adsorbs and supports the substrate located above in a state of being disposed on the bottom plate, and the focus ring surrounds the outer edge region of the dielectric layer; a showerhead unit disposed within the chamber housing that provides a process gas; a plasma generation unit that generates plasma for processing the substrate within the chamber housing by using the process gas; and a by-product removal unit that prevents by-products in the form of polymers or particles generated during the processing of the substrate from being adsorbed or remaining in the region between the dielectric layer and the focus ring, wherein the by-product removal unit includes an inert gas supply module and a discharge module, the inert gas supply module is configured to inject an inert gas into the region between the dielectric layer and the focus ring, the discharge module is configured to remove by-products from the region between the dielectric layer and the focus ring, the inert gas supply module injects the inert gas upward in the region between the dielectric layer and the focus ring, provides the inert gas when processing the substrate or when cleaning the electrostatic chuck and the focus ring after the substrate processing is completed, injects the inert gas at a pressure higher than the pressure for supplying a refrigerant to a cooling member installed in the electrostatic chuck or the pressure for supplying a cleaning gas to the electrostatic chuck, controls the pressure of the injected inert gas independently of the control of the pressure for supplying a refrigerant to a cooling member installed in the electrostatic chuck or the control of the pressure for supplying a cleaning gas to the electrostatic chuck, and the inert gas supply module includes an inert gas supply source and an inert gas transfer line, the inert gas supply source stores and provides the inert gas, the inert gas transfer line is formed to pass through the bottom plate and the dielectric layer and is connected to the inert gas supply source to provide a movement path for the inert gas, the inert gas transfer line is provided in a plurality of numbers, each inert gas transfer line independently provides a movement path for the inert gas, and the plurality of inert gas transfer lines are arranged to be spaced apart from each other at a predetermined interval in the region between the dielectric layer and the focus ring, the discharge module removes by-products downward from the region between the dielectric layer and the focus ring, and removes by-products when processing the substrate or when cleaning the electrostatic chuck and the focus ring after the substrate processing is completed, and the discharge module includes a by-product transfer line and a discharge pump, the by-product transfer line is formed to pass through the bottom plate and the dielectric layer and provides a movement path for the by-products, the discharge pump is connected to the by-product transfer line, and the by-product transfer line is provided in a plurality of numbers, each by-product transfer line independently provides a movement path for the by-products, and the plurality of by-product transfer lines are arranged to be spaced apart from each other at a predetermined interval in the region between the dielectric layer and the focus ring, and the plurality of by-product transfer lines are respectively arranged in the regions where the plurality of inert gas transfer lines are spaced apart from each other.

[0010] A substrate processing method designed to achieve the above object according to one aspect of the present disclosure includes: processing a substrate using a substrate processing apparatus; cleaning the interior of the substrate processing apparatus after the substrate has been completely processed; and removing by-products generated during the processing of the substrate when injecting an inert gas into a region between a focus ring and a dielectric layer included in a substrate support unit of the substrate processing apparatus, wherein the injection of the inert gas and the removal of the by-products are performed during the processing of the substrate or during the cleaning of the interior of the substrate processing apparatus.

[0011] Details of other embodiments are included in the following detailed description and the drawings.

[0012] In a substrate processing apparatus and method according to some embodiments of the present disclosure, during the processing of a substrate and the cleaning process of a process chamber, deposition of by-products on a region between a focus ring and a dielectric layer included in an electrostatic chuck can be suppressed by a by-product removal unit, which includes an inert gas supply module and an exhaust module.

[0013] The effects according to embodiments of the present disclosure are not limited to the effects mentioned above, and more various effects are included in the following description of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] By referring to the drawings to describe in detail exemplary embodiments of the present disclosure, the above and other aspects and features of the present disclosure will become clearer. In the drawings:

[0015] Figures 1 - 3 is a schematic cross-sectional view showing the internal structure of a substrate processing apparatus according to some embodiments of the present disclosure;

[0016] Figure 4 is a schematic cross-sectional view showing a substrate support unit (electrostatic chuck) of a substrate processing apparatus according to some embodiments of the present disclosure;

[0017] Figure 5 and Figure 6 is a schematic cross-sectional view showing a portion where a focus ring is provided in a substrate processing apparatus according to some embodiments of the present disclosure;

[0018] Figure 7 and Figure 8 is a schematic cross-sectional view showing a portion where a by-product removal unit of a substrate processing apparatus is located according to some embodiments of the present disclosure;

[0019] Figure 9 is a flowchart showing a substrate processing method according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0020] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. According to the embodiments to be described in more detail below with reference to the accompanying drawings, the advantages and features of the present disclosure and the methods of achieving the advantages and features will become apparent. However, it should be noted that the present disclosure is not limited to the following embodiments and can be implemented in various forms. These embodiments are provided only for disclosing the present disclosure and enabling those skilled in the art to understand the scope of the present disclosure. In the drawings, the embodiments of the present disclosure are defined by the scope of the claims. Throughout the specification, the same reference numerals denote the same units.

[0021] The terms used herein are for the purpose of the embodiments and are not intended to limit the present disclosure. In the present disclosure, unless otherwise specified, the singular forms are intended to include the plural forms. When the terms "comprising" and / or "including" are used herein, they specify the presence of the stated units, steps, operations, and / or objects, but do not preclude the presence or addition of one or more other units, steps, operations, and / or objects.

[0022] Figure 1 is a schematic cross-sectional view showing the internal structure of a substrate processing apparatus according to some embodiments of the present disclosure.

[0023] Referring Figure 1 , a substrate processing apparatus 100 according to some embodiments of the present disclosure may include: a chamber housing CH, a substrate support unit 110, a process gas supply unit 130, a showerhead unit 140, a plasma generation unit 150, a liner unit 160, a baffle unit 170, a window module WM, and an antenna unit 180.

[0024] In this example, the first direction D1 and the second direction D2 may form a plane in the horizontal direction. The first direction D1 may be the front-back direction, and the second direction D2 may be the left-right direction. Alternatively, the first direction D1 may be the left-right direction, and the second direction D2 may be the front-back direction. The third direction D3 is the height direction and is a direction orthogonal to the plane formed by the first direction D1 and the second direction D2. The third direction D3 may be the vertical direction.

[0025] A substrate processing apparatus 100 according to some embodiments of the present disclosure may process a substrate W by using plasma. The substrate processing apparatus 100 may process the substrate W in a dry method.

[0026] For example, the substrate processing apparatus 100 may process the substrate W in a vacuum environment. The substrate processing apparatus 100 may process the substrate W by using an etching process, but is not limited thereto. The substrate processing apparatus 100 may also process the substrate W by using a deposition process or a cleaning process.

[0027] The chamber outer shell CH provides a space for performing a process of processing a substrate W using plasma (i.e., a plasma process). The surface of the chamber outer shell CH may be made of corrosion-resistant aluminum on which an anodic oxidation film is formed, and its interior may be configured to be airtight. The chamber outer shell CH may be cylindrical in shape, but is not limited thereto, and may have other shapes. There may be an exhaust hole 101 below the chamber outer shell CH.

[0028] The exhaust hole 101 may be connected to an exhaust pipe 103 on which a pump 102 is installed. The exhaust hole 101 can discharge reaction by-products generated during the plasma process and the gas remaining inside the chamber outer shell CH to the outside of the chamber outer shell CH through the exhaust pipe 103. In this case, the internal space of the chamber outer shell CH may be decompressed.

[0029] An opening 104 may be formed through the side wall of the chamber outer shell CH. The opening 104 may be provided as a passage for the substrate W to enter and exit the chamber outer shell CH.

[0030] For example, the opening 104 may be configured to be automatically opened and closed by a door assembly 105.

[0031] The door assembly 105 may include an outer door 106 and a door driver 107.

[0032] The outer door 106 can open and close the opening 104 on the outer wall of the chamber outer shell CH. The outer door 106 can move along the height direction D3 of the substrate processing apparatus 100 under the control of the door driver 107.

[0033] The door driver 107 can be operated using at least one element selected from the following: a motor, a hydraulic cylinder, or a pneumatic cylinder.

[0034] The substrate support unit 110 is installed in the lower region inside the chamber outer shell CH. The substrate support unit 110 can adsorb and support the substrate W by using electrostatic force.

[0035] For example, the substrate support unit 110 may be provided as an electrostatic chuck (ESC), but is not limited thereto, and the substrate support unit 110 can also support the substrate W by using various other methods such as vacuum and mechanical clamping.

[0036] When provided as an electrostatic chuck (ESC), the substrate support unit 110 may include a bottom plate 111 and a dielectric layer 112.

[0037] The dielectric layer 112 is disposed on the bottom plate 111 and can adsorb and support the substrate W mounted thereon. For example, the dielectric layer 112 can be formed of a ceramic material, for example.

[0038] The bottom plate 111 can be made of a material with excellent corrosion resistance and heat resistance. For example, the bottom plate 111 can be provided as an aluminum body.

[0039] Although not shown in Figure 1 the substrate support unit 110 may further include a bonding layer.

[0040] The bonding layer 113 can bond the bottom plate 111 to the dielectric layer 112. For example, the bonding layer can be formed to include a polymer.

[0041] A ring structure 113 is provided to surround the outer edge region of the dielectric layer 112. The ring structure 113 can be used to concentrate ions on the substrate W during a plasma process inside the chamber housing CH. The ring structure 113 can be formed of a silicon material. For example, the ring structure 113 can be provided as a focusing ring.

[0042] Although not shown in Figure 1 the ring structure 113 may further include an edge ring. The edge ring can be provided below or outside the focusing ring.

[0043] The edge ring can be used to prevent the side edges of the dielectric layer 112 from being damaged by plasma. The edge ring can be formed of an insulating material (such as ceramic or quartz).

[0044] A heating member 114 and a cooling member 115 are provided to keep the substrate W at a process temperature during a substrate processing operation inside the chamber housing CH.

[0045] The heating member 114 can be installed inside the dielectric layer 112 and can be provided as a heating wire.

[0046] The cooling member 115 can be installed inside the bottom plate 111 and can be provided as a cooling tube through which a refrigerant flows.

[0047] A cooling device (chiller) 116 can supply the refrigerant to the cooling member 115. The cooling device 116 can use cooling water as the refrigerant, but is not limited thereto, and helium (He) can also be used. Alternatively, the cooling device 116 can use both cooling water and helium as the refrigerant.

[0048] Meanwhile, the heating member 114 may not be provided in the substrate support unit 110.

[0049] A process gas supply unit 130 supplies a process gas to the internal space of the chamber housing CH. The process gas supply unit 130 can supply the process gas to the internal space of the chamber housing CH through a hole (i.e., a window module WM) formed through the upper cover of the chamber housing CH, but is not limited thereto. The process gas supply unit 130 can also supply the process gas to the internal space of the chamber housing CH through a hole formed through the side wall of the chamber housing CH.

[0050] The process gas supply unit 130 may include a process gas supply source 131 and a process gas supply pipe 132.

[0051] The process gas supply source 131 may supply a gas for processing the substrate W as a process gas. In the substrate processing apparatus 100, the process gas supply source 131 may be provided in a single quantity, but is not limited thereto, and may also be provided in a plural quantity. When a plurality of process gas supply sources 131 are provided in the substrate processing apparatus 100, these plurality of process gas supply sources 131 may supply the same type of process gas, but is not limited thereto, and may also supply different types of process gases.

[0052] The showerhead unit 140 injects the process gas supplied from the process gas supply source 131 over the entire area of the substrate W disposed in the inner space of the chamber housing CH. The showerhead unit 140 may be connected to the process gas supply source 131 through the process gas supply pipe 132.

[0053] The showerhead unit 140 is disposed in the inner space of the chamber housing CH and may include a plurality of gas injection holes 142.

[0054] A plurality of gas injection holes 142 may be formed to penetrate the surface of the main body 141 in the vertical direction D3. A plurality of gas injection holes 142 may be formed on the main body 141 such that they are spaced apart from each other at a predetermined interval.

[0055] The showerhead unit 140 may uniformly inject the process gas over the entire area of the substrate W through the plurality of gas injection holes 142.

[0056] The showerhead unit 140 may be installed inside the chamber housing CH to face the substrate support unit 110 in the vertical direction D3. The showerhead unit 140 may be provided to have a diameter larger than that of the dielectric layer 112, but is not limited thereto. The showerhead unit 140 may be provided to have the same diameter as that of the dielectric layer 112. The showerhead unit 140 may be formed of a silicon material, but is not limited thereto. The showerhead unit 140 may also be formed of a metal material.

[0057] Although not shown in Figure 1 , the showerhead unit 140 may be divided into a plurality of units.

[0058] For example, the showerhead unit 140 may be divided into three modules, such as a first head module, a second head module, and a third head module.

[0059] The first head module may be disposed at a position corresponding to the central region of the substrate W.

[0060] The second head module can be arranged to surround the outer edge of the first head module. The second head module can be arranged at a position corresponding to the middle region of the substrate W.

[0061] The third head module can be arranged to surround the outer edge of the second head module. The third head module can be arranged at a position corresponding to the edge region of the substrate W.

[0062] The plasma generation unit 150 generates plasma from the gas remaining in the discharge space.

[0063] In this case, the discharge space is the internal space of the chamber housing CH, which can be the space formed between the showerhead unit 140 and the window module WM. Alternatively, the discharge space can be the space formed between the substrate support unit 110 and the showerhead unit 140.

[0064] When the discharge space is the space formed between the substrate support unit 110 and the showerhead unit 140, the discharge space can be divided into a plasma region and a process region.

[0065] The height of the plasma region can be higher than the height of the process region.

[0066] The plasma generation unit 150 can generate plasma in the discharge space by using an inductively coupled plasma (ICP) source, i.e., an inductively coupled plasma source.

[0067] For example, the plasma generation unit 150 can generate plasma in the discharge space by using the substrate support unit 110 and the antenna unit 180 as the first electrode (lower electrode) and the second electrode (upper electrode) respectively, but this embodiment is not limited thereto.

[0068] The plasma generation unit 150 can generate plasma in the discharge space by using a capacitively coupled plasma (CCP) source, i.e., a capacitively coupled plasma source.

[0069] For example, the plasma generation unit 150 can generate plasma in the discharge space by using the substrate support unit 110 and the showerhead unit 140 as the first electrode (lower electrode) and the second electrode (upper electrode) respectively.

[0070] In this example, the case where the plasma generation unit 150 is provided as an ICP source will be described, and the case where the plasma generation unit 150 is provided as a CCP source will be described later.

[0071] The plasma generation unit 150 can include a first high-frequency power supply 151, a first transmission line 152, a second high-frequency power supply 153, and a second transmission line 154.

[0072] The first high-frequency power supply 151 applies radio frequency (RF) power to the first electrode. The first high-frequency power supply 151 can be used as a plasma source for generating plasma in the chamber housing CH, but is not limited thereto. The first high-frequency power supply 151 can also control the characteristics of the plasma in the chamber housing CH together with the second high-frequency power supply 153.

[0073] In the substrate processing apparatus 100, the first high-frequency power supply 151 can be provided in a plural number. In this case, the plasma generation unit 150 can include a first matching network electrically connected to each of the first high-frequency power supplies.

[0074] The first matching network can be used to match the frequency power when inputting frequency power of different amplitudes from a plurality of first high-frequency power supplies and apply it to the first electrode.

[0075] The first transmission line 152 can connect the first electrode to the ground (GND).

[0076] The first high-frequency power supply 151 can be installed on the first transmission line 152, but is not limited thereto. The first transmission line 152 can connect the first electrode to the first high-frequency power supply 151. For example, the first transmission line 152 can be provided as a radio frequency (RF) rod.

[0077] The second high-frequency power supply 153 applies radio frequency (RF) power to the second electrode. The second high-frequency power supply 153 can be used to control the characteristics of the plasma in the chamber housing CH. For example, the second high-frequency power supply 153 can be used to control the ion bombardment energy in the chamber housing CH.

[0078] In the substrate processing apparatus 100, the second high-frequency power supply 153 can be provided in a plural number. In this case, the plasma generation unit 150 can include a second matching network electrically connected to each of the second high-frequency power supplies.

[0079] The second matching network can be used to match the frequency power when inputting frequency power of different amplitudes from a plurality of second high-frequency power supplies and apply it to the second electrode.

[0080] The second transmission line 154 connects the second electrode to the ground (GND).

[0081] The second high-frequency power supply 153 can be installed on the second transmission line 154.

[0082] The liner unit 160 can be defined as a wall liner that protects the interior of the chamber housing CH from arc discharge generated during the process of exciting the process gas or impurities generated during the substrate processing. The liner unit 160 can be formed to cover the inner wall of the chamber housing CH.

[0083] The gasket unit 160 may include a support ring 162 on the upper portion of the main body 161.

[0084] The support ring 162 may protrude from the upper portion of the main body 161 in the outward direction D1 and may be used to fix the main body 161 to the chamber outer shell CH.

[0085] The baffle unit 170 is used to discharge process by-products or unreacted plasma gas inside the chamber outer shell CH to the outside. The baffle unit 170 may be installed in the space between the substrate support unit 110 and the inner wall of the chamber outer shell CH (or the gasket unit 160) and may be installed near the exhaust hole 101. The baffle unit 170 may be provided as an annular structure between the substrate support unit 110 and the inner wall of the chamber outer shell CH.

[0086] The baffle unit 170 may include a plurality of slots passing through the main body in the vertical direction D3 to control the flow of process gas in the chamber outer shell CH. The baffle unit 170 may be formed of a material having corrosion resistance to minimize damage or deformation caused by free radicals, etc. in the inner space of the chamber outer shell CH where plasma is generated. For example, the baffle unit 170 may be formed to include quartz.

[0087] The window module WM serves as an upper cover of the chamber outer shell CH, which seals the inner space of the chamber outer shell CH. The window module WM may be provided separately from the chamber outer shell CH, but is not limited thereto, and the window module WM may also be provided integrally with the chamber outer shell CH. The window module WM may be formed of an insulating material as a dielectric window.

[0088] For example, the window module WM may be formed of alumina. When a plasma process is performed in the inner space of the chamber outer shell CH, the window module WM may include a coating film on its surface to suppress particle generation.

[0089] The antenna unit 180 excites process gas to form plasma by generating a magnetic field and an electric field inside the chamber outer shell CH. The antenna unit 180 may be operated using radio frequency power supplied from the second high-frequency power supply 153. The antenna unit 180 may be provided on the upper portion of the chamber outer shell CH.

[0090] For example, the antenna unit 180 may be provided on the window module WM, but is not limited thereto, and the antenna unit 180 may also be provided on the side wall of the chamber outer shell CH.

[0091] The antenna unit 180 may include an antenna 182 located inside or on the surface of the main body 181.

[0092] The antenna 182 may be provided as a closed loop formed by using a coil. The antenna 182 may be formed in a spiral shape or various other shapes along the width direction D1 of the chamber outer shell CH.

[0093] The antenna unit 180 may be formed to have a planar structure, but is not limited thereto, and the antenna unit 180 may also be formed to have a cylindrical shape. When the antenna unit 180 is formed to have a planar structure, it may be disposed on the upper part of the chamber outer shell CH. When the antenna unit 180 is formed to have a cylindrical structure, it may be disposed to surround the outer wall of the chamber outer shell CH.

[0094] As described above, the case where the plasma generation unit 150 is provided as an ICP source has been described with reference to Figure 1 The case where the plasma generation unit 150 is provided as a CCP source will be described below with reference to Figure 2 and Figure 3 The redundant description compared with the case of Figure 1 will be omitted, and the parts different from the case of Figure 1 will be described.

[0095] Figure 2 and Figure 3 are schematic cross-sectional views showing the internal structure of a substrate processing apparatus according to some embodiments of the present disclosure.

[0096] Referring to Figure 2 and Figure 3 , a substrate processing apparatus 100 according to some embodiments of the present disclosure may include a chamber outer shell CH, a substrate support unit 110, a process gas supply unit 130, a showerhead unit 140, a plasma generation unit 150, a gasket unit 160, a baffle unit 170, and a window module WM.

[0097] That is, Figure 2 and Figure 3 The substrate processing apparatus 100 in Figure 1 compared with the substrate processing apparatus 100 in

[0098] As Figure 2 shown, the plasma generation unit 150 may include a first high-frequency power supply 151, a first transmission line 152, a second high-frequency power supply 153, and a second transmission line 154, but is not limited thereto. The plasma generation unit 150 may include a first high-frequency power supply 151, a first transmission line 152, and a second transmission line 154, as Figure 3 shown.

[0099] That is, Figure 3 The plasma generation unit 150 in Figure 2 compared with the plasma generation unit 150 in

[0100] In accordance with Figure 1In the case of the example, the second transmission line 154 may be connected to the antenna 182 of the antenna unit 180.

[0101] The second high-frequency power supply 153 may apply radio-frequency power to the antenna 182 of the antenna unit 180.

[0102] In accordance with Figure 2 the example, the second transmission line 154 may be connected to the main body 141 of the showerhead unit 140.

[0103] The second high-frequency power supply 153 may apply radio-frequency power to the main body 141 of the showerhead unit 140.

[0104] In accordance with Figure 2 the example, the second high-frequency power supply 153 may be mounted on the second transmission line 154.

[0105] In accordance with Figure 3 the example, the second high-frequency power supply 153 may not be mountable on the second transmission line 154.

[0106] When the second high-frequency power supply 153 is mounted on the second transmission line 154, the plasma generation unit 150 may apply multiple frequencies to the substrate processing apparatus 100.

[0107] Although not shown in Figures 1 to 3 the substrate processing apparatus 100 according to some embodiments of the present disclosure may further include a control device.

[0108] The control device is configured to control the overall operation of each unit constituting the substrate processing apparatus 100. The control device may control the entire substrate processing process of the substrate processing apparatus 100.

[0109] The control device may include: a processor that controls each component of the substrate processing apparatus 100; a network that performs wired or wireless communication with each component; one or more instructions that are related to controlling the function or operation of each component; and a storage device for storing a process recipe that includes instructions, various data, etc. The control device may further include a user interface that includes: an input device for allowing an operator to perform command input operations, etc. to manage the substrate processing apparatus 100; and an output device for visualizing and displaying the activation state of the substrate processing apparatus 100. The control device may be provided as a computing device for data processing and analysis and command transmission.

[0110] The instructions may be provided in the form of a computer program or application. The computer program may include one or more instructions and may be stored on a computer-readable recording medium. The instructions may include code generated by a compiler, code executed by an interpreter, etc.

[0111] The storage device may be provided as one or more storage media selected from the following: flash memory, HDD, SSD, cartridge memory, RAM, SRAM, ROM, EEPROM, PROM, magnetic memory, magnetic disk, and optical disk.

[0112] Meanwhile, the process gas supply unit 130 may supply a process gas into the chamber housing CH so that plasma for processing the substrate W can be generated.

[0113] For example, the process gas supply unit 130 may supply a fluorine-based gas, a carbon-based gas, etc. as the process gas.

[0114] The fluorine-based process gas and the carbon-based process gas may combine with the thin film material of the substrate W during the substrate processing to generate by-products. The fluorine-based process gas and the carbon-based process gas may combine with the coating formed on the components inside the chamber housing CH during the substrate processing to generate by-products.

[0115] The by-products may be adsorbed to the components. For example, the components may be the chamber housing CH, the ring structure (focusing ring) 113, the baffle unit 170, etc. For example, the by-products may be in the form of polymers or particles.

[0116] The by-products may be removed by an in-situ dry cleaning (ISD) process after the substrate processing. However, only a part of the carbon-based polymer or the silicon-based polymer can be removed, and in the case of the YF-based polymer formed by combining with the Y2O3 coating, it is very difficult to remove such a polymer by the ISD process.

[0117] The by-products that cannot be removed even by the ISD process remain in the components.

[0118] As the number of processes increases, the by-products remaining in the components may become a source of particles or defects. The by-products remaining in the components may shorten the preventive maintenance cycle of the substrate processing apparatus 100 and may reduce the yield of semiconductor products produced by the substrate processing apparatus 100.

[0119] Figure 4 is a schematic cross-sectional view of a substrate support unit (electrostatic chuck) of a substrate processing apparatus according to some embodiments of the present disclosure. Figure 5 and Figure 6 is a schematic cross-sectional view of a part where a focusing ring is provided in a substrate processing apparatus according to some embodiments of the present disclosure. Figure 7 and Figure 8 is a schematic cross-sectional view of a part where a by-product removal unit of a substrate processing apparatus according to some embodiments of the present disclosure is located.

[0120] Reference Figures 4 to 6, according to some embodiments of the present disclosure, the substrate processing apparatus 100 may include a by-product removal unit 200. The by-product removal unit 200 is configured to prevent by-products generated during the process of processing the substrate W from being adsorbed to or remaining in the region between the dielectric layer 112 included in the electrostatic chuck (substrate support unit 110) that supports the substrate and the focus ring (ring structure 113) surrounding the outer edge region of the dielectric layer 112.

[0121] The by-product removal unit 200 may include an inert gas supply module 210 and an exhaust module 220.

[0122] The inert gas supply module 210 is configured to supply an inert gas and allow the inert gas to be injected into the region between the dielectric layer 112 and the focus ring 113. In this example, the inert gas may include gases such as helium (He), neon (Ne), argon (Ar), nitrogen, and clean air.

[0123] The inert gas supply module 210 injects the inert gas upward in the height direction D3 in the region between the dielectric layer 112 and the focus ring 113. By injecting the inert gas through the inert gas supply module 210, by-products can be prevented from depositing in the region between the dielectric layer 112 and the focus ring 113.

[0124] The inert gas supply module 210 can supply the inert gas when processing the substrate W. During the process of processing the substrate W, by injecting the inert gas through the inert gas supply module 210, by-products can be prevented from depositing in the region between the dielectric layer 112 and the focus ring 113.

[0125] The inert gas supply module 210 can supply the inert gas when cleaning the dielectric layer 112 and the focus ring 113 after the processing of the substrate W is completed. That is, during the in-situ dry cleaning (ISD) process of cleaning the interior of the process chamber after the processing of the substrate W has been completed, by injecting the inert gas through the inert gas supply module 210, by-products can be prevented from depositing in the region between the dielectric layer 112 and the focus ring 113.

[0126] The inert gas supply module 210 can inject the inert gas at a high pressure. The inert gas supply module 210 can inject the inert gas at a pressure higher than the pressure at which the refrigerant is supplied to the cooling member 115 installed in the electrostatic chuck 110.

[0127] The inert gas supply module 210 can control the pressure of injecting the inert gas independently of the control of the pressure of supplying the refrigerant to the cooling member 115 installed in the electrostatic chuck 110. This can be achieved under the control of the control device.

[0128] The inert gas supply module 210 may include an inert gas supply source 211 and an inert gas transfer pipeline 212.

[0129] The inert gas supply source 211 may include a storage tank for storing an inert gas. The inert gas supply source 211 may operate under the control of a control device. The inert gas supply source 211 may discharge the inert gas stored in the storage tank into the inert gas transfer pipeline 212.

[0130] The inert gas supply source 211 may be connected to the inert gas transfer pipeline 212.

[0131] A valve that can be opened and closed may be provided between the inert gas supply source 211 and the inert gas transfer pipeline 212. Additionally, a valve that can be opened and closed may be provided on the inert gas transfer pipeline 212. When the valve is opened, the inert gas supply source 211 may discharge the inert gas into the inert gas transfer pipeline 212.

[0132] The inert gas transfer pipeline 212 may be provided to pass through the bottom plate 111 and the dielectric layer 112, both of which are included in the electrostatic chuck 110. One side of the inert gas transfer pipeline 212 may be connected to the inert gas supply source 211. The other side of the inert gas transfer pipeline 212 may be exposed to the inside of the chamber housing CH through the upper surface of the dielectric layer 112. The inert gas transfer pipeline 212 provides a moving path for the inert gas supplied from the inert gas supply source 211.

[0133] The inert gas jetted and discharged from one side to the other side of the inert gas transfer pipeline 212 may inhibit the adsorption of by-products in the region between the focusing ring 113 and the dielectric layer 112 of the electrostatic chuck 111.

[0134] Reference Figure 7 and Figure 8 and, the inert gas transfer pipelines 212 may be provided in a plural number, and each inert gas transfer pipeline 212 may independently provide a moving path for the inert gas. In this instance, both the inert gas supply source 211 and the inert gas transfer pipelines 212 may be provided in a plural number. Alternatively, only the inert gas transfer pipelines 212 may be provided in a plural number, and the plural number of inert gas transfer pipelines 212 branch out from one inert gas supply source 211.

[0135] When both the inert gas supply source 211 and the inert gas transfer pipelines 212 are provided in a plural number, the number of the inert gas supply source 211 and the inert gas transfer pipelines 212 may be the same. The inert gas supply source 211 and the inert gas transfer pipelines 212 constituting each group may operate independently.

[0136] A plurality of inert gas transfer lines 212 may be provided to be spaced apart from each other at a predetermined interval within the region between the dielectric layer 112 and the focus ring 113. For example, when the region between the dielectric layer 112 and the focus ring 113 is circular, the plurality of inert gas transfer lines 212 may be provided to be spaced apart from each other along the perimeter of the region between the dielectric layer 112 and the focus ring 113.

[0137] Reference Figures 4 to 6 , the discharge module 220 is configured to remove by-products and allow the by-products to be sucked in and discharged from the region between the dielectric layer 112 and the focus ring 113, thereby removing the by-products.

[0138] The discharge module 220 can remove by-products downward in the height direction D3 from the region between the dielectric layer 112 and the focus ring 113, thereby suppressing the deposition of by-products.

[0139] The discharge module 220 can remove by-products during the processing of the substrate W. The by-products remaining in the region between the dielectric layer 112 and the focus ring 113 can be sucked away and discharged by the discharge module 220 for removal.

[0140] After the processing of the substrate W is completed, the discharge module 220 can remove by-products when cleaning the dielectric layer 112 and the focus ring 113. That is, during the in-situ dry cleaning (ISD) process of cleaning the interior of the process chamber after the processing of the substrate W has been completed, by-products are removed by the inert gas ejected by the inert gas supply module 210 to prevent the by-products from depositing in the region between the dielectric layer 112 and the focus ring 113. In this case, the discharge module 220 can remove by-products by allowing the by-products to be sucked away and discharged while preventing the by-products from being suspended or scattered into the chamber housing CH by the inert gas ejected and discharged from the inert gas transfer line 212.

[0141] The discharge module 220 can remove by-products under high pressure. The discharge module 220 can allow the by-products to be sucked away and discharged downward in the height direction D3 under high pressure. This can be achieved under the control of the control device.

[0142] The discharge module 220 may include a by-product transfer line 221 and a discharge pump 222.

[0143] The by-product transfer line 221 may be provided to pass through the bottom plate 111 and the dielectric layer 112, both of which are included in the electrostatic chuck 110. One side of the by-product transfer line 221 may be connected to the discharge pump 222. The other side of the by-product transfer line 221 may pass through the upper surface of the dielectric layer 112 and be exposed to the interior of the chamber housing CH. The by-product transfer line 221 provides a discharge (transfer) path for sucking away by-products from the region between the dielectric layer 112 and the focus ring 113.

[0144] The discharge pump 222 can operate under the control of the control device. The discharge pump 222 can suck and discharge by-products at high pressure through the control device. For example, the discharge pump 220 can have the shape of a turbomolecular pump (TMP).

[0145] The discharge pump 222 can be connected to the by-product transfer pipeline 221.

[0146] A valve that can be opened and closed can be provided between the discharge pump 222 and the by-product transfer pipeline 221. Alternatively, a valve that can be opened and closed can be provided on the by-product transfer pipeline 221. When the valve is opened, the discharge pump 222 can allow the by-products to be sucked in through the by-product transfer pipeline 221 and discharged from the area between the dielectric layer 112 and the focusing ring 113, thereby removing the by-products.

[0147] Reference Figure 7 and Figure 8 , the by-product transfer pipelines 221 can be provided in a plural number, and each of the plurality of by-product transfer pipelines 221 can independently provide a transfer (discharge) path for the by-products. In this example, both the by-product transfer pipelines 221 and the discharge pump 222 can be provided in a plural number. Alternatively, only the inert gas transfer pipelines 212 can be provided in a plural number, and the plural number of inert gas transfer pipelines 212 branch out from one discharge pump 222.

[0148] When both the by-product transfer pipelines 221 and the discharge pump 222 are provided in a plural number, the number of the by-product transfer pipelines 221 and the discharge pump 222 can be the same. The by-product transfer pipelines 221 and the discharge pump 222 constituting each group can operate independently.

[0149] The plurality of by-product transfer pipelines 221 can be arranged to be spaced apart from each other at a predetermined interval within the area between the dielectric layer 112 and the focusing ring 113. For example, when the area between the dielectric layer 112 and the focusing ring 113 is circular, the plurality of by-product transfer pipelines 221 can be arranged to be spaced apart along the perimeter of the area between the dielectric layer 112 and the focusing ring 113.

[0150] Each of the plurality of by-product transfer pipelines 221 can be arranged in an area where the plurality of inert gas transfer pipelines 212 are spaced apart from each other. That is, in the area between the dielectric layer 112 and the focusing ring 113 of the substrate processing apparatus 100 according to some embodiments of the present disclosure, the plurality of inert gas transfer pipelines 212 and the plurality of by-product transfer pipelines 221 can be provided in an array of inert gas transfer pipelines 212, by-product transfer pipelines 221, inert gas transfer pipelines 212, and by-product transfer pipelines 221.

[0151] Figure 9It is a flowchart showing a substrate processing method according to some embodiments of the present disclosure.

[0152] Referring Figure 9 , when the substrate W is introduced into the substrate processing apparatus 100 according to some embodiments of the present disclosure, the substrate processing apparatus 100 performs a substrate processing process (S310). The substrate processing process may be a process of processing the substrate W using plasma.

[0153] When performing the substrate processing process, the inert gas supply module 210 of the by-product removal unit 200 injects an inert gas upward along the height direction D3 toward the region between the dielectric layer 112 and the focus ring 113. At the same time, the discharge module 220 of the by-product removal unit 200 inhales and discharges downward along the height direction D3 the by-products remaining in the region between the dielectric layer 112 and the focus ring 113, thereby removing the by-products (S320).

[0154] The inert gas can prevent the generation of by-products. Alternatively, the inert gas can prevent the by-products from being adsorbed to the region between the dielectric layer 112 and the focus ring 113. The discharge module 220 can inhale and discharge the by-products in the region between the dielectric layer 112 and the focus ring 113, thereby preventing the by-products from being adsorbed or remaining.

[0155] When the substrate processing process is completed, the substrate processing apparatus 100 performs a cleaning process (S330). For example, the cleaning process may be an in-situ dry cleaning (ISD) process.

[0156] When performing the cleaning process, the inert gas supply module 210 of the by-product removal unit 200 injects an inert gas upward along the height direction D3 toward the region between the dielectric layer 112 and the focus ring 113. At the same time, the discharge module 220 of the by-product removal unit 200 inhales and discharges downward along the height direction D3 the by-products remaining in the region between the dielectric layer 112 and the focus ring 113, thereby removing the by-products (S340).

[0157] The by-product removal unit 200 may inject an inert gas during the substrate processing process and the cleaning process, while sucking and discharging the by-products, but is not limited thereto. The by-product removal unit 200 may inject an inert gas during any one of the substrate processing process and the cleaning process, while sucking and discharging the by-products.

[0158] As described above, in the substrate processing apparatus and method according to some embodiments of the present disclosure, during the substrate processing process or the cleaning process of the process chamber, the deposition of by-products on the region between the focus ring 113 and the dielectric layer 112 included in the electrostatic chuck 110 can be suppressed by the by-product removal unit 200, and the by-product removal unit 200 includes an inert gas supply module 210 and a discharge module 220.

[0159] Although embodiments of the present disclosure have been described with reference to the accompanying drawings, it is apparent to those skilled in the art that the present disclosure can be embodied in other specific forms without departing from the technical spirit and essential features of the present disclosure. Therefore, the above embodiments should be considered illustrative rather than restrictive in all respects.

Claims

1. A substrate processing device, comprising: An electrostatic chuck, supporting the substrate; a focusing ring surrounding an outer edge region of a dielectric layer included in the electrostatic chuck; as well as The byproduct removal unit prevents byproducts generated during the processing of the substrate from being adsorbed or remaining in the area between the dielectric layer and the focus ring.

2. The substrate processing apparatus according to claim 1, wherein the byproduct removal unit comprises: an inert gas supply module, allowing an inert gas to be sprayed into a region between the dielectric layer and the focus ring; as well as The exhaust module removes the by-products by sucking or exhausting the by-products remaining in the area between the dielectric layer and the focus ring or the by-products suspended due to the injection of the inert gas.

3. The substrate processing device according to claim 2, wherein in the area between the dielectric layer and the focusing ring, the inert gas supply module sprays the inert gas from the lower side in the height direction of the base plate included in the electrostatic chuck through the base plate and the dielectric layer to the upper side in the height direction of the dielectric layer. 4 . The substrate processing apparatus according to claim 2 , wherein the inert gas supply module supplies an inert gas when processing a substrate. 5 . The substrate processing apparatus according to claim 2 , wherein the inert gas supply module provides the inert gas when cleaning the dielectric layer and the focus ring after the substrate has been completely processed. 6 . The substrate processing apparatus according to claim 2 , wherein the inert gas supply module sprays the inert gas at a high pressure. 7 . The substrate processing apparatus of claim 6 , wherein the inert gas supply module sprays the inert gas at a pressure higher than a pressure at which a refrigerant is supplied to a cooling member installed in the electrostatic chuck. 8 . The substrate processing apparatus according to claim 2 , wherein the inert gas supply module controls a pressure of the sprayed inert gas independently of a pressure of a refrigerant supplied to a cooling member installed in the electrostatic chuck.

9. The substrate processing apparatus according to claim 2, wherein the electrostatic chuck comprises a base plate and the dielectric layer, and the dielectric layer adsorbs and supports the substrate located on the upper portion when the dielectric layer is placed on the base plate, The inert gas supply module comprises: Inert gas supply source, storing and providing inert gas; as well as An inert gas moving line is formed to pass through the base plate and the dielectric layer and is connected to the inert gas supply source to provide a moving path for the inert gas. 10 . The substrate processing apparatus according to claim 9 , wherein the inert gas moving line is provided in a plurality of numbers, and each of the inert gas moving lines independently provides a moving path of the inert gas. 11 . The substrate processing apparatus according to claim 10 , wherein a plurality of inert gas moving lines are disposed to be spaced apart from each other at predetermined intervals in a region between the dielectric layer and the focus ring. 12 . The substrate processing apparatus of claim 2 , wherein the exhaust module removes byproducts downward from an area between the dielectric layer and the focus ring.

13. The substrate processing apparatus of claim 2, wherein the exhaust module removes byproducts while processing the substrate.

14. The substrate processing apparatus of claim 2, wherein the exhaust module removes byproducts when cleaning the dielectric layer and the focus ring after the substrate has been completely processed.

15. The substrate processing apparatus according to claim 9, wherein the exhaust module comprises: a byproduct moving pipeline formed to pass through the bottom plate and the dielectric layer to provide a moving path for the byproduct; as well as A discharge pump is connected to the byproduct moving line. 16 . The substrate processing apparatus according to claim 15 , wherein the by-product moving lines are provided in a plural number, and each by-product moving line independently provides a moving path for the by-product.

17. The substrate processing apparatus according to claim 16, wherein a plurality of byproduct moving lines are disposed to be spaced apart from each other at predetermined intervals in a region between the dielectric layer and the focus ring, and are respectively disposed in regions where a plurality of inert gas moving lines are spaced apart from each other.

18. The substrate processing apparatus according to claim 15, wherein the exhaust pump sucks and discharges the by-products at a high pressure through the by-product moving line.

19. A substrate processing device, comprising: A chamber housing, providing a space for processing a substrate; a substrate supporting unit, disposed in the chamber housing, supporting the substrate by comprising a bottom plate, a dielectric layer and a focus ring, wherein the dielectric layer absorbs and supports the substrate located on the top when being disposed on the bottom plate, and the focus ring surrounds the outer edge region of the dielectric layer; A showerhead unit is disposed in the chamber housing and provides a process gas; a plasma generating unit generating plasma for processing a substrate inside the chamber housing by using a process gas; as well as a byproduct removal unit to prevent byproducts generated during the processing of the substrate from being adsorbed or remaining in the area between the dielectric layer and the focus ring, The byproduct removal unit includes: an inert gas supply module for spraying inert gas into the area between the dielectric layer and the focus ring; and an exhaust module for removing byproducts from the area between the dielectric layer and the focus ring. The inert gas supply module: spraying an inert gas upward in a region between the dielectric layer and the focus ring, When processing a substrate, or when cleaning the dielectric layer and the focus ring after processing the substrate, an inert gas is provided. injecting an inert gas at a pressure higher than a pressure of a refrigerant supplied to a cooling member installed in the electrostatic chuck, controlling the pressure of the injected inert gas independently of controlling the pressure of the refrigerant supplied to the cooling member installed in the electrostatic chuck, and The inert gas supply source includes an inert gas supply source for storing and providing an inert gas; and an inert gas moving pipeline formed to pass through the base plate and the dielectric layer and connected to the inert gas supply source to provide a moving path for the inert gas. The inert gas moving pipeline is provided in a plurality, each of the inert gas moving pipelines independently provides a moving path of the inert gas, and the plurality of inert gas moving pipelines are arranged to be spaced apart from each other at predetermined intervals in a region between the dielectric layer and the focus ring, The emission module: removing byproducts from the area between the dielectric layer and the focus ring downwardly and removing byproducts when processing a substrate or when cleaning the dielectric layer and the focus ring after processing of the substrate, and The invention comprises: a byproduct moving pipeline formed to pass through the bottom plate and the dielectric layer to provide a moving path for the byproduct; and a discharge pump connected to the byproduct moving pipeline, and The by-product moving pipelines are provided in a plurality, each by-product moving pipeline independently provides a moving path for the by-product, and the plurality of by-product moving pipelines are arranged to be separated from each other at predetermined intervals in the area between the dielectric layer and the focusing ring, and the plurality of by-product moving pipelines are respectively arranged in areas where the plurality of inert gas moving pipelines are separated from each other.

20. A substrate processing method, comprising: processing a substrate using a substrate processing device; cleaning the interior of the substrate processing apparatus after the substrate has been completely processed; as well as removing byproducts generated in the process of processing the substrate while spraying an inert gas into a region between a focus ring and a dielectric layer included in a substrate supporting unit of the substrate processing apparatus, The injection of the inert gas and the removal of the by-products are performed when processing the substrate or when cleaning the interior of the substrate processing apparatus.

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