Method and apparatus for substrate temperature control

Abstract

A method and apparatus for controlling a substrate temperature includes: measuring a substrate subjected to a deposition process; analyzing the measurements of the substrate to detect a defect of the substrate; and transmitting a feedback signal to modify a temperature control parameter of a temperature controller for controlling a temperature of the substrate in the deposition process based on the analysis if a defect is detected, and not transmitting the feedback signal to modify the temperature control parameter if a defect is not detected.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to methods, systems, and devices for substrate temperature control. Background Art

[0002] AC bias is sometimes used during the deposition of an aluminum (Al) film (e.g., PVD deposition) on a substrate. The AC bias is used to improve the Al coverage on the substrate. However, the inventors have observed that the AC bias undesirably increases the temperature on the substrate due to the bombardment of certain portions of the substrate by argon radicals. The increased temperature can degrade the morphology of the film by increasing the roughness of the film surface, which can be measured by a decrease in reflectivity (RI). The increase in film roughness during Al deposition can be exacerbated during downstream processes involving heat treatment (e.g., annealing).

[0003] In addition, during Al deposition, the outer edge of the electrostatic chuck can be contaminated. This contamination can interfere with the contact between the outer portion of the substrate and the surface of the electrostatic chuck, resulting in a decrease in heat transfer efficiency and a higher temperature around the outer portion of the substrate.

[0004] The inventors have proposed novel methods and devices for substrate temperature control that can improve film morphology and mitigate the effects of reduced heat transfer efficiency of the electrostatic chuck. Summary of the Invention

[0005] Methods and devices for controlling the temperature of a substrate are provided herein. In some embodiments, a method for controlling the temperature of a substrate includes: measuring a substrate undergoing a deposition process; analyzing the measurement of the substrate to detect a defect in the substrate; and based on the analysis if a defect is detected, sending a feedback signal to modify a temperature control parameter of a temperature controller used to control the temperature of the substrate in the deposition process, and if no defect is detected, not sending a feedback signal to modify the temperature control parameter.

[0006] In some embodiments, a system for controlling the temperature of a substrate includes: a measurement chamber configured to receive a substrate undergoing a deposition process; a measurement device coupled to the measurement chamber and configured to measure at least a portion of the substrate when disposed in the measurement chamber; an analysis device configured to analyze the measurement of the substrate and detect a defect in the substrate; and a controller configured to, based on the analysis if a defect is detected, send a feedback signal to modify a temperature control parameter of a temperature controller used to control the temperature of the substrate in the deposition process, and if no defect is detected, not sending a feedback signal to modify the temperature control parameter.

[0007] In some embodiments, a non-transitory computer-readable storage medium has instructions stored thereon that, when executed, perform a method for controlling the temperature of a substrate. The method includes: measuring a substrate undergoing a deposition process; analyzing the measurement of the substrate to detect a defect in the substrate; and based on the analysis if a defect is detected, sending a feedback signal to modify a temperature control parameter of a temperature controller used to control the temperature of the substrate during the deposition process, and if no defect is detected, not sending a feedback signal to modify the temperature control parameter.

[0008] Other and further embodiments of the present disclosure are described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The embodiments of the present disclosure outlined above and discussed in more detail below can be understood by reference to the illustrative embodiments of the present disclosure depicted in the accompanying drawings. However, the drawings only illustrate typical embodiments of the present disclosure and should not be considered as limiting the scope, as the present disclosure may admit other equivalent embodiments.

[0010] Figure 1 is a schematic diagram of a system according to an embodiment of the present disclosure.

[0011] Figure 2 is a flowchart of a method according to an embodiment of the present disclosure.

[0012] For ease of understanding, the same reference numerals are used as much as possible to denote the same elements common to the drawings. The drawings are not drawn to scale and may be simplified for clarity. The elements and features of one embodiment may be advantageously incorporated into other embodiments without further recitation. DETAILED DESCRIPTION

[0013] The embodiments of the present disclosure outlined above and discussed in more detail below can be understood by reference to the illustrative embodiments of the present disclosure depicted in the accompanying drawings. However, the drawings only illustrate typical embodiments of the present disclosure and should not be considered as limiting the scope, as the present disclosure may admit other equivalent embodiments.

[0014] Embodiments of methods, systems, and devices for controlling the temperature of a substrate are provided herein. The methods, systems, and devices can provide substrate temperature control based on defects detected in the substrate being processed. By considering defects in the substrate, both the effects of surface degradation caused by AC bias and electrostatic chuck contamination can be reduced, while also avoiding manual heater adjustments, preventive maintenance, and downtime.

[0015] Figure 1FIG. 0 is a schematic diagram of a system 100 according to an embodiment of the present disclosure. In some embodiments, the system 100 may include a processing chamber 102 and a substrate support 104 disposed in the processing chamber 102. The processing chamber 102 may be configured to perform substrate processing on a substrate 108. In some embodiments, the processing chamber 102 may be a PVD chamber configured to perform a PVD deposition process on the substrate 108. In some embodiments, and as Figure 1 shown in, the substrate support 104 may have a support surface 106 to support the substrate 108 during substrate processing in the processing chamber 102. In some embodiments, as Figure 1 shown in, the substrate support 104 may have a plurality of zones 109 ( Figure 1 a first zone 110 near the center of the substrate support 104 and a second zone 112 near the edge of the substrate support 104 are shown in). In some embodiments, the substrate support 104 is circular and the plurality of zones includes at least one of a circular zone or an annular zone. The system 100 may also include a sputtering target 114 disposed in the processing chamber 102 opposite the support surface 106 and the substrate 108. In some embodiments, the sputtering target 114 may include aluminum. The system 100 may also include a plurality of temperature sensors 115 ( Figure 1 a first temperature sensor 116, a second temperature sensor 118, and a third temperature sensor 120 are shown in), each configured to sense the temperature in a corresponding zone of the plurality of zones 109. For example, in Figure 1 shown in, the first temperature sensor 116 is configured to sense the temperature in the first zone 110, and the second temperature sensor 118 and the third temperature sensor 120 are configured to sense the temperature in the second zone 112. In some embodiments, the temperature in each zone of the plurality of zones 109 may be monitored by a corresponding temperature sensor located in each zone.

[0016] The system 100 may also include a multi-zone temperature control system 111 for controlling the temperature of the plurality of zones 109 and thus the temperature of the substrate 108 during the deposition process in the processing chamber 102. In some embodiments, the temperature control system 111 may be configured to independently control the temperature in each zone of the plurality of zones 109. In some embodiments, and as Figure 1 shown in, the temperature control system 111 may include a plurality of temperature elements 121, each corresponding to one of the plurality of zones 109 (for example, Figure 1 a first temperature element 122 and a second temperature element 124 are shown in). For example, in the embodiment shown in Figure 1 shown in, the first temperature element 122 corresponds to the first zone 110 and the second temperature element 124 corresponds to the second zone 112.

[0017] The temperature element 121 may include at least one of a heating element or a coolant circuit. In some embodiments, the heating element may include a resistive heating element, and in some embodiments, the coolant circuit may include fluid channels configured to direct a heat transfer fluid (such as water). In some embodiments, and as Figure 1 shown in, a plurality of zones 109 may be arranged as a circular or annular region of the substrate support 104, and a plurality of temperature elements 121 may be arranged to extend concentrically within one or more of the plurality of zones 109.

[0018] In some embodiments, and as Figure 1 shown in, the temperature control system 111 may include a temperature controller 126 configured to independently control each temperature element of the plurality of temperature elements 121 based on measurements of the substrate 108, as discussed more fully below. In some embodiments where there are heating elements, the temperature controller 126 may include at least one driver 128 configured as a heater driver, the driver 128 being connected to the plurality of heating elements and to a supply 130 configured as a power supply, and the driver 128 may be configured to control the power output to each heating element. In some embodiments where there is a coolant circuit, the temperature controller 126 may include at least one driver 128 configured as a flow driver, the driver 128 being connected to the plurality of individual fluid channels and to a supply 130 configured as a fluid supply, and the driver 128 may be configured to control the fluid flow through each fluid channel.

[0019] In some embodiments, the temperature controller 126 may include a processor 132 (programmable) operable with a memory 134 and a mass storage device, an input control unit, and a display unit (not shown), such as a power supply, a frequency, a cache, input / output (I / O) circuitry, a driver 128, and support circuitry 136 coupled to the processing system for facilitating control of substrate processing. The support circuitry 136 may be coupled to the processor 132 to support the processor 132 in a conventional manner.

[0020] To facilitate control of the above-described system 100, the processor 132 can be any form of general-purpose computer processor that can be used in an industrial environment, such as a programmable logic controller (PLC), for controlling various chambers and sub-processors. The memory 134 coupled to the processor 132 and the memory 134 can be non-transitory computer-readable storage media and can be one or more of readily available memories, such as random access memory (RAM), read-only memory (ROM), floppy disk drives, hard disks, or any other form of local or remote digital storage. Generation, heating, deposition, and other processing of charged materials are generally stored in the memory 134, typically as software routines. Software routines can also be stored and / or executed by a second processor (not shown) located remotely from the system 100 controlled by the processor 132.

[0021] The memory 134 can be in the form of a computer-readable storage medium containing instructions that, when executed by the processor 132, facilitate the operation of the system 100. The instructions in the memory 134 can be in the form of a program product, such as a program implementing a method according to an embodiment of the present disclosure. The program code can conform to any one of a variety of different programming languages. In one example, the present disclosure can be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program of the program product defines the functions of the embodiment (including the methods described herein). Illustrative non-transitory computer-readable storage media include, but are not limited to: (i) non-writable storage media on which information is permanently stored (e.g., read-only memory devices within a computer, such as a CD-ROM disc readable by a CD-ROM disk drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory); and (ii) writable storage media on which changeable information is stored (e.g., a floppy disk or hard disk drive within a disk drive or any type of solid-state random access semiconductor memory). When carrying computer-readable instructions to direct the functions of the methods described herein, these non-transitory computer-readable storage media are embodiments of the present disclosure.

[0022] Figure 1Also shown is a substrate measurement system 160 that communicates with the system 100 in accordance with embodiments of the present disclosure. In some embodiments, the substrate measurement system 160 may be configured to measure a substrate 108 and send a feedback signal to the temperature controller 126 to adjust the temperature control parameters (e.g., temperature set point) of the temperature controller 126. In some embodiments, the substrate measurement system 160 may be configured to measure at least one of the following: the reflectivity (RI) of the sputter deposition surface of the substrate 108, the sheet resistance of the substrate 108, the film thickness of the sputter deposited film, or the resistivity of a portion of the substrate 108. These measurements can be used to indicate defects on the sputter deposition surface of the substrate 108. The detected defects are defects caused at least in part by the substrate temperature during the deposition process in the processing chamber 102.

[0023] In some embodiments, the substrate measurement system 160 may include a measurement chamber 162, at least one measurement device 164 configured to measure properties of the substrate 108, and an analysis device 166 configured to determine whether the substrate 108 includes a defect or a defect resulting from the deposition process. In some embodiments, as Figure 1 shown, the measurement chamber 162 may be separate from the processing chamber 102. For example, in some embodiments, the measurement chamber 162 and the processing chamber 102 may be part of a common cluster tool 180 for processing substrates, such as a PVD Cluster tool available from Applied Materials, Inc. of Santa Clara, California, where the substrate 108 can be transferred between the processing chamber 102 and the measurement chamber 162. In some embodiments, and as Figure 1 shown, the substrate 108 may be supported in the measurement chamber 162 by a substrate support 168 such that the substrate 108 is positioned opposite the measurement device 164.

[0024] Additionally, in some embodiments, the measurement device 164 and the analysis device 166 may be remote from each other. Additionally, in some embodiments, the measurement device 164 and the analysis device 166 may be combined together in a single device. In some embodiments, the measurement device 164 may include a non-contact measurement device.

[0025] The non-contact measurement device may include an image acquisition device (e.g., a camera or a microscope) for acquiring an image of at least a portion of the substrate 108 and an image processor for processing the acquired image of the substrate 108. In some embodiments, the acquired image may be processed and / or stored locally on the measurement device 164 and / or remotely from the measurement device 164 (e.g., on a server or in the cloud).

[0026] In some embodiments, the measurement device 164 may be configured to measure at least one of the following: the reflectivity of the deposition surface of the substrate 108, the deposition film thickness, or the resistivity of at least a portion of the substrate 108.

[0027] The analysis device 166 may analyze the acquired and / or processed images to measure and detect defects on the substrate 108. In some embodiments, the analysis device 166 is configured to inspect the acquired and / or processed images for the presence of defects. For example, the analysis device 166 may be configured to compare the measurements with predetermined measurements to determine the presence of defects. In some embodiments, the analysis device 166 may be configured to inspect the acquired images for the presence and clarity of alignment marks on the substrate 108. For example, in some embodiments, the substrate measurement system 160 may be configured to optically identify features (e.g., alignment marks) on one or more portions of the substrate 108 to detect the presence of defects and send feedback to the temperature controller 126 based on the detection of the defects.

[0028] For example, one or more alignment marks may be present along the outer edge of the substrate 108. A blurred image of an alignment mark that can be optically detected by the substrate measurement system 160 may indicate that the temperature of the substrate 108 at or near the alignment mark is too high during the deposition process in the processing chamber 102.

[0029] Additionally, in some embodiments, the non-contact measurement device may be configured to measure the resistivity of at least a portion of the substrate 108. The analysis device 166 may compare the resistivity measurement with a predetermined range of acceptable resistivity. A measurement that exceeds the predetermined range of acceptable resistivity may indicate a defect due to too low a substrate temperature during the deposition process, while a resistivity measurement that is less than the predetermined range may indicate a defect due to too high a substrate temperature during the deposition process.

[0030] In some embodiments, the analysis device 166 may be configured to determine, for each detected defect, one or more regions of the plurality of regions 109 corresponding to the location of the defect on the substrate 108. For example, in some embodiments, as described above, the analysis device 166 may determine that the temperature in one or more of the plurality of regions 109 is at least partially responsible for the detected defect.

[0031] In some embodiments, to reduce or prevent detected defects from occurring in subsequent substrates to be processed in processing chamber 102, the analysis device may send a feedback signal to temperature controller 126 to modify the temperature control parameters of temperature controller 126. In some embodiments, the temperature control parameters may include temperature set points for one or more of the plurality of zones 109 that are determined to be at least partially causative of the detected defects. For example, in the case where the analysis device 166 determines that the defect is caused by too high a temperature, the feedback signal may include a temperature set point lower than the temperature set point used during substrate processing of substrate 108. Similarly, in the case where the analysis device 166 determines that the defect is caused by too low a temperature, the feedback signal may include a temperature set point higher than the temperature set point used during substrate processing of substrate 108.

[0032] In some embodiments, the temperature control parameters may include tuning parameters for a driver 128 (e.g., a heater driver) that tunes temperature controller 126 to control the driver output to one or more of the plurality of temperature elements 121. For example, in the case where temperature element 121 includes a heating element, the feedback signal may include a signal for adjusting the power output to one or more heater elements corresponding to the determined location of the detected substrate defect. The power output of the heating element can be adjusted to change the control characteristics and responsiveness of the heater (e.g., control ramp rate, duty cycle, damping, and overshoot).

[0033] In some embodiments, analysis device 166 may include a processor 170 (programmable), an input control unit, and a display unit (not shown) that can operate with memory 172 and a mass storage device, such as a power supply, frequency, cache, input / output (I / O) circuitry 176, and support circuitry 174 that couples to various components of the processing system to facilitate control of substrate processing. Support circuitry 174 may couple to processor 170 to support processor 170 in a conventional manner.

[0034] To facilitate control of the above-described analysis device 166, processor 170 may be one of any form of general computer processor that can be used in an industrial environment, such as a programmable logic controller (PLC). Memory 172 and memory 172 that couples to processor 170 may be non-transitory computer-readable storage media and may be one or more of readily accessible memories, such as random access memory (RAM), read-only memory (ROM), floppy disk drive, hard disk, or any other form of local or remote digital storage. Substrate measurement and inspection processes are generally stored in memory 172, typically as software routines. Software routines may also be stored and / or executed by a second processor (not shown) remote from the analysis device controlled by processor 170.

[0035] The memory 172 can be in the form of a computer-readable storage medium containing instructions that, when executed by the processor 170, facilitate the operation of the analysis device 166. The instructions in the memory 172 can be in the form of a program product, such as a program implementing a method according to an embodiment of the present disclosure. The program code can conform to any of a variety of different programming languages. In one example, the present disclosure can be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program of the program product defines the functions of the embodiment (including the methods described herein). Illustrative non-transitory computer-readable storage media include, but are not limited to: (i) non-writable storage media that permanently store information (e.g., read-only memory devices within a computer, such as a CD-ROM disc readable by a CD-ROM disk drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory); and (ii) writable storage media that store changeable information (e.g., a floppy disk or hard disk drive within a disk drive or any type of solid-state random access semiconductor memory). When carrying computer-readable instructions to direct the functions of the methods described herein, such non-transitory computer-readable storage media are embodiments of the present disclosure.

[0036] Figure 2 A method 200 for controlling the substrate temperature according to an embodiment of the present disclosure is shown. In some embodiments, at 202, when a substrate (e.g., 108) that has undergone a deposition process in the processing chamber 102 is received in the measurement chamber 162 and placed on the substrate support 168 to prepare for measurement of the substrate 108, this method begins. For example, in some embodiments, the substrate 108 can be processed in the processing chamber 102 and then transferred to the measurement chamber 162 within the cluster tool 180 for measurement. Thus, in some embodiments, the substrate 108 received in the measurement chamber 162 can have a sputter deposition surface deposited in the processing chamber 102.

[0037] At 204, the substrate 108 can be measured by the measurement device 164. In some embodiments where the measurement device 164 includes an image acquisition device (such as a camera or microscope), the image acquisition device can acquire an image of one or more portions (e.g., the sputter deposition surface) of the substrate 108. As described herein, in some embodiments, the acquired image can be processed and stored locally on or remotely from the measurement device 164. Measurements of portions of the substrate can be obtained from the processed image.

[0038] At 206, the processed image can be analyzed by the analysis device 166 to detect one or more defects of the substrate 108. For example, the analysis device 166 can examine the processed image for the presence of one or more defects of the substrate. In some embodiments, the processed image can be examined for the presence and clarity of alignment marks on the substrate. As described above, in some embodiments, measurements can be compared with a predetermined threshold to determine whether one or more defects are present. For example, if the alignment marks are not visibly present or are measurably unclear, a defect can be determined to be present. Additionally, in some embodiments, the analysis device 166 can use any type of image analysis technique, including using optical recognition and / or artificial intelligence to identify features and defects on the substrate 108. Additionally, for each detected defect, one or more regions of the plurality of regions 109 corresponding to the location of the defect can be determined.

[0039] At 208, if the analysis device 166 determines that a defect is present on the substrate 108 (e.g., the alignment marks at the edge of the substrate become blurred), a feedback signal can be sent at 210 to the temperature controller 126 of the temperature control system 111 to modify the temperature control parameters of the temperature controller for controlling the substrate temperature during the deposition process. For example, the temperature control parameters can include the temperature set points for one or more regions of the plurality of regions 109 determined to correspond to the detected defect. Additionally, as described above, the temperature control parameters can include the tuning parameters for the driver 128 of the temperature controller 126. Additionally, at 210, after measuring the substrate 108 in the measurement chamber 162, the substrate 108 can be transferred out of the measurement chamber 162 (e.g., to another chamber of the cluster tool 180) to make room in the measurement chamber 162 to measure another substrate that has been processed in the processing chamber 102.

[0040] At 212, the temperature controller 126 can respond to the feedback signal by adjusting the temperature control system 111, such as by adjusting the temperature set points for one or more regions 109 or tuning the output of the driver 128. Then, method 200 can be repeated for a plurality of different substrates processed in the processing chamber 102 from 202 to 212 until no defects are found at 208.

[0041] At 208, if the analysis device 166 determines that no defect is present on the substrate 108, method 200 can end at 214, and any substrate 108 in the measurement chamber 162 can subsequently be transferred out of the measurement chamber 162 (e.g., to another chamber of the cluster tool 180).

[0042] Method 200 can be executed multiple times, such as periodically or as needed (to maintain the process control of the deposition process in the processing chamber 102).

[0043] Embodiments of the methods, systems, and devices described herein can provide substrate temperature control based on defects detected in a substrate being processed. By sending a feedback signal to the temperature controller 126, temperature control of the substrate being processed in the processing chamber 102 can compensate for the effects of surface degradation and electrostatic chuck contamination caused by AC bias, thereby reducing defects and improving yield.

[0044] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure can be devised without departing from its basic scope.

Claims

1. A method for controlling the temperature of a substrate, the method comprising: Measuring a substrate undergoing a deposition process; Analyzing the measurement of the substrate to detect a defect in the substrate; And Based on the analysis if a defect is detected, sending a feedback signal to modify temperature control parameters of a temperature controller used to control the temperature of the substrate during the deposition process, and if no defect is detected, not sending a feedback signal to modify the temperature control parameters.

2. The method according to claim 1, wherein measuring the substrate comprises: Obtaining an image of at least a portion of the substrate, and the analysis includes: checking the obtained image for the presence of the defect.

3. The method according to claim 2, wherein the analysis comprises: Checking the obtained image for the presence and clarity of alignment marks on the substrate.

4. The method according to claim 1 or 2, wherein the measurement comprises: Measuring at least one of: the reflectivity of the deposition surface of the substrate, the deposition film thickness, or the resistivity of at least a portion of the substrate.

5. The method according to claim 1 or 2, wherein During the deposition process, the substrate is supported on a substrate support, the substrate support including a plurality of zones independently temperature controlled by the temperature controller, and wherein the analysis includes: for each detected defect, determining one or more of the plurality of zones corresponding to the location of the defect on the substrate.

6. The method according to claim 5, wherein the temperature control parameters include temperature set points of the determined one or more of the plurality of zones.

7. The method according to claim 1 or 2, wherein the temperature control parameters include at least one temperature set point.

8. A system for controlling the temperature of a substrate, the system comprising: A measurement chamber configured to receive a substrate undergoing a deposition process; A measurement device coupled to the measurement chamber, the measurement device configured to measure at least a portion of the substrate when disposed in the measurement chamber; An analysis device configured to analyze the measurement of the substrate and detect a defect in the substrate; And A controller configured to, based on the analysis if a defect is detected, send a feedback signal to modify temperature control parameters of a temperature controller used to control the temperature of the substrate during the deposition process, and if no defect is detected, not send a feedback signal to modify the temperature control parameters.

9. The system according to claim 8, wherein the measurement device is configured to obtain an image of at least a portion of the substrate, and the analysis device is configured to check the obtained image for the presence of the defect.

10. The system according to claim 9, wherein the analysis device is configured to check the obtained image for the presence and clarity of alignment marks on the substrate.

11. The system according to claim 8 or 9, wherein the measurement device is configured to measure at least one of: the reflectivity of the deposition surface of the substrate, the deposition film thickness, or the resistivity of at least a portion of the substrate.

12. The system according to claim 8 or 9, wherein the measurement device includes an image acquisition device.

13. The system according to claim 8 or 9, the system further comprising: A processing chamber; A substrate support in the processing chamber, the substrate support having a plurality of zones; And A temperature control system configured to independently control the temperature in each of the plurality of zones based on the feedback signal.

14. A non-transitory computer-readable storage medium having instructions stored thereon that, when executed, perform a method for controlling a substrate temperature, the method comprising: Measuring a substrate undergoing a deposition process; Analyzing the measurement of the substrate to detect a defect in the substrate; And Based on the analysis if a defect is detected, sending a feedback signal to modify temperature control parameters of a temperature controller used to control the temperature of the substrate during the deposition process, and if no defect is detected, not sending a feedback signal to modify the temperature control parameters.

15. The non-transitory computer-readable storage medium according to claim 14, wherein measuring the substrate comprises: Obtaining an image of at least a portion of the substrate, and the analysis includes: examining the obtained image for the presence of the defect.

16. The non-transitory computer-readable storage medium according to claim 15, wherein the analysis comprises: Examining the obtained image for the presence and clarity of alignment marks on the substrate.

17. The non-transitory computer-readable storage medium according to claim 14 or 15, wherein the measurement comprises: Measuring at least one of: reflectivity of a deposition surface of the substrate, deposition film thickness, or resistivity of at least a portion of the substrate.

18. The non-transitory computer-readable storage medium according to claim 14 or 15, wherein, During the deposition process, the substrate is supported on a substrate support including a plurality of zones independently temperature-controlled by the temperature controller, and wherein the analysis includes: for each detected defect, determining one or more of the plurality of zones corresponding to the location of the defect on the substrate.

19. The non-transitory computer-readable storage medium of claim 18, wherein the temperature control parameters include temperature set points for the determined one or more of the plurality of zones.

20. The non-transitory computer-readable storage medium of claim 14 or 15, wherein the temperature control parameters include at least one temperature set point.

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