Preparation method of high-temperature-friction-resistant C / SiC sealing strip added with multiple nickel wires

Abstract

The invention discloses a preparation method of a high-temperature-friction-resistant C / SiC sealing strip added with a plurality of nickel wires, and relates to a preparation method of a high-temperature-friction-resistant C / SiC sealing strip. The problem that an existing C / SiC sealing strip is insufficient in performance in an extremely high-temperature friction environment is solved. The method comprises the following steps: 1, low-temperature plasma treatment; 2, a CVD deposition process; 3, nickel wire adding and compounding; and 4, post-processing. The method is used for preparing the high-temperature-friction-resistant C / SiC sealing strip added with the multiple nickel wires.

Description

Technical Field

[0001] The present invention relates to a preparation method of a C / SiC sealing strip with high temperature resistance to friction. Background Art

[0002] In modern industry, sealing strips are widely used in various scenarios that require sealing, such as the sealing of aircraft engine compartments in the aerospace field, the sealing of automobile engines, and the sealing of high-temperature industrial equipment. Due to its good high-temperature resistance, friction resistance, and chemical stability, C / SiC composite material has become one of the ideal materials for preparing high-temperature sealing strips. The traditional preparation method of C / SiC sealing strips is usually to process carbon fiber-based materials and then compound them with silicon carbide. However, under some extreme high-temperature and frictional working conditions, the bonding between carbon fibers and SiC inside the traditional C / SiC sealing strip is easily damaged, resulting in a decrease in the overall structural stability of the material, and then an increase in wear and failure of the sealing performance, seriously affecting the normal operation and service life of the equipment. Therefore, it is of great practical significance to develop a method that can effectively improve the high-temperature friction resistance of C / SiC sealing strips and at the same time has a simple process and controllable cost. Summary of the Invention

[0003] The present invention aims to solve the problem of insufficient performance of existing C / SiC sealing strips in an extreme high-temperature friction environment, and further provides a preparation method of a C / SiC sealing strip with high temperature resistance to friction by adding multiple nickel wires.

[0004] A preparation method of a C / SiC sealing strip with high temperature resistance to friction by adding multiple nickel wires is carried out according to the following steps:

[0005] I. Low-temperature plasma treatment:

[0006] Using argon as the working gas, under the conditions that the argon flow rate is 50 sccm to 500 sccm and the radio frequency power is 20 W to 150 W, the carbon fiber sealing strip is subjected to low-temperature plasma treatment for 5 min to 100 min to obtain a plasma-treated carbon fiber sealing strip;

[0007] II. CVD deposition process:

[0008] Place the carbon fiber sealing strip after plasma treatment in the reaction chamber of the CVD reaction equipment and evacuate it. Then introduce the mixed reaction gas, and at the same time turn on the heating system. Heat the reaction chamber to 1050°C - 1550°C at a heating rate of 10°C / min - 15°C / min. Then, under the conditions of a sample rotation speed of 5 r / min - 100 r / min, a reaction chamber pressure of 1 Pa - 40 Pa, and a temperature of 1050°C - 1550°C, carry out the deposition reaction for 1 h - 10 h. After the deposition is completed, stop introducing the mixed reaction gas, maintain the vacuum state, let the reaction chamber cool naturally to room temperature, and finally take it out to obtain the carbon fiber sealing strip after CVD deposition;

[0009] The described mixed reaction gas is composed of a silicon source gas, a carbon source gas, and a dilution gas;

[0010] III. Nickel wire addition and compounding:

[0011] Evenly insert nickel wires inside the carbon fiber sealing strip after CVD deposition. After the insertion is completed, conduct preliminary compaction to obtain the C / SiC sealing strip with added nickel wires;

[0012] The volume percentage of nickel wires in the C / SiC sealing strip with added nickel wires is 1% - 20%;

[0013] IV. Post-treatment:

[0014] Conduct hot pressing treatment on the C / SiC sealing strip with added nickel wires, then conduct grinding and polishing treatments in sequence, and finally conduct tempering treatment in an argon atmosphere, thus completing the preparation method of the C / SiC sealing strip with multiple added nickel wires for high-temperature friction resistance.

[0015] The beneficial effects of the present invention are:

[0016] A C / SiC sealing strip with multiple added nickel wires for high-temperature friction resistance provided by the present invention is an improvement based on the existing preparation method of CVD silicon carbide coating. Using this method can significantly enhance the overall structural stability, improve the high-temperature friction resistance performance of the sealing strip, and at the same time ensure the relative simplicity of the preparation process and cost controllability. This sealing strip can be used in the field of high-temperature sealing. Description of the Drawings

[0017] Figure 1 It is a comparison chart of the wear rates of the C / SiC sealing strips prepared in Examples 1 - 2 and Comparative Example 1 under the high-temperature friction condition of 800°C;

[0018] Figure 2 It is a comparison chart of the friction coefficients of the C / SiC sealing strips prepared in Examples 1 - 2 and Comparative Example 1 under the high-temperature friction condition of 800°C. Detailed Embodiments

[0019] Embodiment 1: A preparation method of a C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance is carried out according to the following steps:

[0020] I. Low-temperature plasma treatment:

[0021] Using argon as the working gas, under the conditions of an argon flow rate of 50 sccm to 500 sccm and a radio frequency power of 20 W to 150 W, the carbon fiber sealing strip is subjected to low-temperature plasma treatment for 5 min to 100 min to obtain the plasma-treated carbon fiber sealing strip;

[0022] II. CVD deposition process:

[0023] The plasma-treated carbon fiber sealing strip is placed in the reaction chamber of the CVD reaction equipment and evacuated, and then a mixed reaction gas is introduced. At the same time, the heating system is turned on, and the reaction chamber is heated to 1050 °C to 1550 °C at a heating rate of 10 °C / min to 15 °C / min. Then, under the conditions of a sample rotation speed of 5 r / min to 100 r / min, a reaction chamber pressure of 1 Pa to 40 Pa, and a temperature of 1050 °C to 1550 °C, the deposition reaction is carried out for 1 h to 10 h. After the deposition is completed, the introduction of the mixed reaction gas is stopped, and the vacuum state is maintained to allow the reaction chamber to cool naturally to room temperature. Finally, it is taken out to obtain the CVD-deposited carbon fiber sealing strip;

[0024] The mixed reaction gas is composed of a silicon source gas, a carbon source gas, and a dilution gas;

[0025] III. Nickel wire addition and compounding:

[0026] The nickel wires are evenly inserted into the interior of the CVD-deposited carbon fiber sealing strip. After the insertion is completed, preliminary compaction is carried out to obtain the C / SiC sealing strip with nickel wires added;

[0027] The volume percentage of nickel wires in the C / SiC sealing strip with nickel wires added is 1% to 20%;

[0028] IV. Post-treatment:

[0029] The C / SiC sealing strip with nickel wires added is subjected to hot pressing treatment, and then grinding and polishing treatments are carried out in sequence. Finally, tempering treatment is carried out in an argon atmosphere, and thus the preparation method of the C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance is completed.

[0030] In step I of this specific embodiment, the surface of the sealing strip is activated by low-temperature plasma treatment, the surface roughness and active sites are increased, and the adhesion of the subsequent CVD deposition is improved.

[0031] In step two of this specific embodiment, during the heating process, as the reaction gas decomposes under high temperature and the action of the catalyst, SiC particles gradually deposit on the surface of the uniformly rotating carbon fiber sealing strip.

[0032] In step two of this specific embodiment, continuously adjust the gas flow rate and the reaction chamber pressure to stably maintain the reaction chamber pressure at 1 Pa to 40 Pa to ensure uniform deposition of SiC particles.

[0033] In step three of this specific embodiment, preliminarily compact the sealing strip to ensure close contact between the nickel wire and the C / SiC matrix.

[0034] In step four of this specific embodiment, the hot pressing treatment further enhances the bonding force between the nickel wire and the C / SiC matrix. After the hot pressing treatment, grind and polish the sealing strip to make its dimensional accuracy and surface flatness meet the usage requirements. Finally, perform tempering treatment to eliminate internal residual stress and improve the performance stability of the material.

[0035] The beneficial effect of this embodiment is:

[0036] A C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance provided by this embodiment is an improvement based on the existing preparation method of CVD silicon carbide coating. Using this method can significantly enhance the overall structural stability, improve the high-temperature friction resistance performance of the sealing strip, and at the same time ensure the relative simplicity of the preparation process and cost controllability. This sealing strip can be used in the field of high-temperature sealing.

[0037] Specific embodiment two: The difference between this embodiment and specific embodiment one is that: the carbon fiber sealing strip described in step one is a pretreated carbon fiber sealing strip, and the pretreatment is specifically carried out according to the following steps: under the condition of an ultrasonic power of 300 W to 500 W, sequentially place it in acetone and absolute ethanol for ultrasonic cleaning for 15 min to 120 min respectively, and then dry it for 1 h to 10 h under the condition of a temperature of 60 °C to 180 °C. Others are the same as specific embodiment one.

[0038] This specific embodiment removes oil stains, impurities, mold release agents, etc. on the surface through cleaning.

[0039] Specific embodiment three: The difference between this embodiment and one of specific embodiments one or two is that: the carbon fiber sealing strip described in step one is woven from T300 carbon fiber bundles. Others are the same as specific embodiments one or two.

[0040] Specific embodiment four: The difference between this embodiment and one of specific embodiments one to three is that: the silicon source gas described in step two is SiH4; the carbon source gas described in step two is CH4; the dilution gas described in step two is hydrogen. Others are the same as specific embodiment three.

[0041] Specific Embodiment 5: The difference between this embodiment and any one of Embodiments 1 to 4 is that the purity of the silicon source gas, carbon source gas, and dilution gas described in Step 2 is ≥4N. Others are the same as those in Embodiments 1 to 4.

[0042] Specific Embodiment 6: The difference between this embodiment and any one of Embodiments 1 to 5 is that the volume ratio of the silicon source gas to the carbon source gas in Step 2 is 1:(1 - 5); the volume ratio of the silicon source gas to the dilution gas in Step 2 is 1:(1 - 20). Others are the same as those in Embodiments 1 to 5.

[0043] Specific Embodiment 7: The difference between this embodiment and any one of Embodiments 1 to 6 is that in Step 2, the vacuum is pumped to 10 -4 Pa to 10 -2 Pa. Others are the same as those in Embodiments 1 to 6.

[0044] Specific Embodiment 8: The difference between this embodiment and any one of Embodiments 1 to 7 is that the nickel wire described in Step 3 is a pretreated nickel wire, and the pretreatment is specifically carried out according to the following steps: Place the nickel wire in a hydrochloric acid solution with a mass percentage of 1% - 10%, soak it at a temperature of 40°C - 50°C for 10 min - 150 min, then rinse it clean with deionized water, and finally dry it at a temperature of 100°C - 180°C for 1 h - 10 h; the diameter of the nickel wire described in Step 3 is 0.05 mm - 0.2 mm, and the purity is not less than 99.5%. Others are the same as those in Embodiments 1 to 7.

[0045] In this specific embodiment, the nickel wire is pretreated to remove the surface oxide layer; the nickel wire in this specific embodiment has good high-temperature resistance and certain flexibility.

[0046] Specific Embodiment 9: The difference between this embodiment and any one of Embodiments 1 to 8 is that in Step 3, the nickel wires are evenly inserted into the interior of the carbon fiber sealing strip after CVD deposition at an adjacent nickel wire spacing of 1 mm - 5 mm. After the insertion is completed, under the conditions of a vacuum degree of 10 -4 Pa to 10 -2 Pa and a pressure of 1 MPa - 5 MPa, it is preliminarily compacted for 5 h - 24 h. Others are the same as those in Embodiments 1 to 8.

[0047] Embodiment 10: The difference between this embodiment and any one of Embodiments 1 to 9 is as follows: In Step 4, the hot pressing treatment is specifically carried out under the conditions of vacuum, a temperature of 800°C to 1500°C, and a pressure of 10 MPa to 20 MPa for 1 h to 2 h; in Step 4, the tempering treatment is specifically carried out under the conditions of an argon atmosphere and a temperature of 600°C to 800°C for 2 h to 3 h. Others are the same as those in Embodiments 1 to 9.

[0048] The following examples are used to verify the beneficial effects of the present invention:

[0049] Example 1:

[0050] A preparation method of a C / SiC sealing strip with high-temperature resistance and friction added with multiple nickel wires is carried out according to the following steps:

[0051] I. Low-temperature plasma treatment:

[0052] Using argon as the working gas, under the conditions of an argon flow rate of 60 sccm and a radio frequency power of 120 W, the carbon fiber sealing strip is subjected to low-temperature plasma treatment for 8 min to obtain a carbon fiber sealing strip after plasma treatment;

[0053] II. CVD deposition process:

[0054] The carbon fiber sealing strip after plasma treatment is placed in the reaction chamber of the CVD reaction equipment, evacuated to 5×10 -3 Pa, then the mixed reaction gas is introduced, and at the same time, the heating system is turned on. The reaction chamber is heated to 1100°C at a heating rate of 12°C / min, and then under the conditions of a sample rotation speed of 50 r / min, a reaction chamber pressure of 30 Pa, and a temperature of 1100°C, the deposition reaction is carried out for 4 h. After the deposition is completed, the introduction of the mixed reaction gas is stopped, and the vacuum state is maintained to allow the reaction chamber to cool naturally to room temperature. Finally, it is taken out to obtain a carbon fiber sealing strip after CVD deposition;

[0055] The mixed reaction gas is composed of a silicon source gas, a carbon source gas, and a dilution gas;

[0056] The silicon source gas is SiH4; the carbon source gas is CH4; the dilution gas is hydrogen;

[0057] The purities of the silicon source gas, the carbon source gas, and the dilution gas are all ≥4N;

[0058] The volume ratio of the silicon source gas to the carbon source gas is 1:2.5; the volume ratio of the silicon source gas to the dilution gas is 1:18;

[0059] III. Nickel wire addition and compounding:

[0060] Insert the nickel wires evenly into the interior of the carbon fiber sealing strip after CVD deposition at an adjacent nickel wire spacing of 3 mm. After the insertion is completed, under the conditions of a vacuum of 10 -3 Pa and a pressure of 3 MPa, preliminarily compact for 12 h to obtain a C / SiC sealing strip with nickel wires added;

[0061] The volume percentage of nickel wires in the C / SiC sealing strip with nickel wires added is 8%;

[0062] IV. Post-treatment:

[0063] Under the conditions of vacuum, a temperature of 900 °C and a pressure of 15 MPa, perform hot pressing treatment on the C / SiC sealing strip with nickel wires added for 1.5 h, then perform grinding and polishing treatments in sequence. Finally, under the conditions of an argon atmosphere and a temperature of 800 °C, perform tempering treatment for 2.5 h to obtain a C / SiC sealing strip with multiple nickel wires added and high-temperature friction resistance.

[0064] The carbon fiber sealing strip described in Step I is a pretreated carbon fiber sealing strip, and the pretreatment is specifically carried out according to the following steps: Under the condition of an ultrasonic power of 400 W, place it in acetone and absolute ethanol in sequence and ultrasonically clean for 18 min respectively, then dry for 10 h under the condition of a temperature of 80 °C.

[0065] The carbon fiber sealing strip described in Step I is woven from T300 carbon fiber bundles.

[0066] The nickel wires described in Step III are pretreated nickel wires, and the pretreatment is specifically carried out according to the following steps: Place the nickel wires in a hydrochloric acid solution with a mass percentage of 5%, soak for 60 min under the condition of a temperature of 50 °C, then rinse with deionized water until clean, and finally dry for 8 h under the condition of a temperature of 120 °C; the diameter of the nickel wires described in Step III is 0.1 mm, and the purity is not less than 99.5%.

[0067] Example 2:

[0068] A preparation method of a C / SiC sealing strip with multiple nickel wires added and high-temperature friction resistance, which is carried out according to the following steps:

[0069] I. Low-temperature plasma treatment:

[0070] Using argon as the working gas, under the conditions of an argon flow rate of 50 sccm and a radio frequency power of 100 W, perform low-temperature plasma treatment on the carbon fiber sealing strip for 10 min to obtain a plasma-treated carbon fiber sealing strip;

[0071] II. CVD deposition process:

[0072] Place the plasma-treated carbon fiber sealing strip in the reaction chamber of the CVD reaction equipment, evacuate to 10 - 2 Pa, then introduce the mixed reaction gas. At the same time, turn on the heating system and heat the reaction chamber to 1050°C at a heating rate of 10°C / min. Then, under the conditions of a sample rotation speed of 40 r / min, a reaction chamber pressure of 20 Pa, and a temperature of 1050°C, carry out the deposition reaction for 5 h. After the deposition is completed, stop introducing the mixed reaction gas, maintain the vacuum state, allow the reaction chamber to cool naturally to room temperature, and finally take it out to obtain the carbon fiber sealing strip after CVD deposition;

[0073] The mixed reaction gas is composed of a silicon source gas, a carbon source gas, and a dilution gas;

[0074] The silicon source gas is SiH4; the carbon source gas is CH4; the dilution gas is hydrogen;

[0075] The purities of the silicon source gas, the carbon source gas, and the dilution gas are all ≥4N;

[0076] The volume ratio of the silicon source gas to the carbon source gas is 1:2; the volume ratio of the silicon source gas to the dilution gas is 1:15;

[0077] III. Nickel wire addition and composite:

[0078] According to the adjacent nickel wire spacing of 3 mm, evenly insert the nickel wires inside the carbon fiber sealing strip after CVD deposition. After the insertion is completed, under the conditions of a vacuum of 10 -4 Pa and a pressure of 3 MPa, initially compact for 24 h to obtain the C / SiC sealing strip with added nickel wires;

[0079] The volume percentage of nickel wires in the C / SiC sealing strip with added nickel wires is 6%;

[0080] IV. Post-treatment:

[0081] Under the conditions of vacuum, a temperature of 800°C, and a pressure of 10 MPa, carry out hot pressing treatment on the C / SiC sealing strip with added nickel wires for 2 h, then successively carry out grinding and polishing treatments, and finally carry out tempering treatment for 3 h under an argon atmosphere and a temperature of 600°C to obtain the C / SiC sealing strip with multiple added nickel wires and high-temperature friction resistance.

[0082] The carbon fiber sealing strip described in step I is a pre-treated carbon fiber sealing strip, and the pretreatment is specifically carried out according to the following steps: Under the condition of an ultrasonic power of 300 W, successively place it in acetone and absolute ethanol and ultrasonically clean for 20 min respectively, and then dry for 4 h under the condition of a temperature of 100°C.

[0083] The carbon fiber sealing strip described in Step 1 is woven from T300 carbon fiber bundles.

[0084] The nickel wire described in Step 3 is pre-treated nickel wire, and the specific pre-treatment is carried out according to the following steps: The nickel wire is placed in a hydrochloric acid solution with a mass percentage of 6%, soaked at a temperature of 40 °C for 80 min, then rinsed clean with deionized water, and finally dried at a temperature of 150 °C for 6 h; The diameter of the nickel wire described in Step 3 is 0.12 mm, and the purity is not less than 99.5%.

[0085] Comparative Example 1: The difference between this example and Example 1 is that Step 3 is cancelled. Others are the same as Example 1.

[0086] Use a special grinding head with a size of 20 mm × 20 mm, apply a load of 1000 g on the grinding head, and reciprocally rub the specimen under the condition of a friction speed of 50 r / min. The test results are as Figure 1 and 2 shown.

[0087] Figure 1 It is a comparison chart of the wear rates of the C / SiC sealing strips prepared in Examples 1-2 and Comparative Example 1 under the high-temperature friction condition of 800 °C; It can be seen from the figure that under the high-temperature friction condition of 800 °C, the wear rates of Examples 1-2 with nickel wire added are only 0.05 mg / N·m and 0.06 mg / N·m, which are lower than the wear rate of 0.11 mg / N·m of Comparative Example 1, indicating that adding nickel wire is beneficial to reducing the wear loss of the sealing strip.

[0088] Figure 2 It is a comparison chart of the friction coefficients of the C / SiC sealing strips prepared in Examples 1-2 and Comparative Example 1 under the high-temperature friction condition of 800 °C; It can be found that the friction coefficients of Example 1 and Example 2 at 800 °C are 0.35 and 0.37, which are significantly lower than 0.48 of Comparative Example 1 without nickel wire added, fully indicating that adding multiple nickel wires to the C / SiC sealing strip in the examples can effectively improve the high-temperature friction performance of the sealing strip.

Claims

1. A preparation method of a C / SiC sealing strip with high temperature resistance and friction resistance by adding multiple nickel wires, characterized in that It is carried out according to the following steps: I. Low-temperature plasma treatment: Using argon as the working gas, under the conditions that the argon flow rate is 50 sccm to 500 sccm and the radio frequency power is 20 W to 150 W, the carbon fiber sealing strip is subjected to low-temperature plasma treatment for 5 min to 100 min to obtain the carbon fiber sealing strip after plasma treatment; II. CVD deposition process: The carbon fiber sealing strip after plasma treatment is placed in the reaction chamber of the CVD reaction equipment and evacuated, then the mixed reaction gas is introduced. At the same time, the heating system is turned on, and the reaction chamber is heated to 1050 °C to 1550 °C at a heating rate of 10 °C / min to 15 °C / min. Then, under the conditions that the sample rotation speed is 5 r / min to 100 r / min, the reaction chamber pressure is 1 Pa to 40 Pa, and the temperature is 1050 °C to 1550 °C, the deposition reaction is carried out for 1 h to 10 h. After the deposition is completed, the introduction of the mixed reaction gas is stopped, and the vacuum state is maintained to allow the reaction chamber to cool naturally to room temperature. Finally, it is taken out to obtain the carbon fiber sealing strip after CVD deposition; The mixed reaction gas described above is composed of a silicon source gas, a carbon source gas, and a dilution gas; III. Nickel wire addition and compounding: The nickel wire is evenly inserted into the carbon fiber sealing strip after CVD deposition. After the insertion is completed, it is preliminarily compacted to obtain the C / SiC sealing strip with nickel wire added; The volume percentage of nickel wire in the C / SiC sealing strip with nickel wire added described above is 1% to 20%; IV. Post-treatment: The C / SiC sealing strip with nickel wire added is subjected to hot pressing treatment, then polished and buffed in sequence, and finally tempered in an argon atmosphere, thus completing the preparation method of the C / SiC sealing strip with multiple nickel wires added for high-temperature wear resistance.

2. The preparation method of a C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance according to claim 1, characterized in that The carbon fiber sealing strip described in step I is a pre-treated carbon fiber sealing strip, and the pretreatment is specifically carried out according to the following steps: under the condition that the ultrasonic power is 300 W to 500 W, it is successively placed in acetone and absolute ethanol for ultrasonic cleaning for 15 min to 120 min, and then dried for 1 h to 10 h under the condition that the temperature is 60 °C to 180 °C.

3. The preparation method of a C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance according to claim 1, characterized in that The carbon fiber sealing strip described in step I is woven from T300 carbon fiber bundles.

4. The preparation method of a C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance according to claim 1, characterized in that The silicon source gas described in step II is SiH4; the carbon source gas described in step II is CH4; the dilution gas described in step II is hydrogen.

5. The preparation method of a C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance according to claim 1, characterized in that The purity of the silicon source gas, carbon source gas, and dilution gas described in step II is ≥4N.

6. The preparation method of a C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance according to claim 1, characterized in that The volume ratio of the silicon source gas to the carbon source gas described in step II is 1:(1 - 5); the volume ratio of the silicon source gas to the dilution gas described in step II is 1:(1 - 20).

7. The preparation method of a C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance according to claim 1, characterized in that In step two, evacuate to 10 -4 Pa to 10 -2 Pa.

8. The preparation method of a C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance according to claim 1, characterized in that The nickel wire described in step three is a pretreated nickel wire, and the pretreatment is specifically carried out according to the following steps: Place the nickel wire in a hydrochloric acid solution with a mass percentage of 1% to 10%, soak it for 10 min to 150 min under the condition of a temperature of 40°C to 50°C, then rinse it clean with deionized water, and finally dry it for 1 h to 10 h under the condition of a temperature of 100°C to 180°C; The diameter of the nickel wire described in step three is 0.05 mm to 0.2 mm, and the purity is not less than 99.5%.

9. The preparation method of a C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance according to claim 1, characterized in that In Step 3, the nickel wires are evenly inserted into the carbon fiber sealing strip after CVD deposition at an adjacent nickel wire spacing of 1 mm to 5 mm. After the insertion is completed, under the conditions of a vacuum of 10 -4 Pa to 10 -2 Pa and a pressure of 1 MPa to 5 MPa, it is preliminarily compacted for 5 h to 24 h.

10. The preparation method of a C / SiC sealing strip with multiple nickel wires added for high-temperature friction resistance according to claim 1, characterized in that The hot pressing treatment described in step four is specifically carried out under the conditions of vacuum, a temperature of 800°C to 1500°C, and a pressure of 10 MPa to 20 MPa for 1 h to 2 h; The tempering treatment described in step four is specifically carried out under the conditions of an argon atmosphere and a temperature of 600°C to 800°C for 2 h to 3 h.

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