Wafer electroplating device

Abstract

The embodiment of the invention provides a wafer electroplating device which comprises an electroplating bath used for containing electroplating liquid, and a positive electrode is arranged in the electroplating bath; the flow field plate is arranged between the positive electrode and the wafer, the flow field plate is provided with a plurality of through holes for electroplating liquid to pass through to form a flow field, the flow field plate comprises at least one flow field transition area, and each flow field transition area comprises at least two flow field areas with different resistivity; wherein the maximum resistivity in each flow field transition region is the minimum resistivity in the flow field on one side where the maximum resistivity in the flow fields on the two adjacent sides in the radial direction is located, or the minimum resistivity in the flow field transition region is the maximum resistivity in the flow field on one side where the minimum resistivity in the flow fields on the two adjacent sides in the radial direction is located; and the flow field region with the maximum resistivity or the flow field region with the minimum resistivity in the flow field transition region extends to the boundary of one side of the flow field with the same resistivity as the flow field region. According to the wafer electroplating device, wafer coating can be uniform.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and more particularly, to a wafer electroplating device. Background Art

[0002] In the process of integrated circuit manufacturing, it is usually necessary to coat a film on a device. The film coating methods include electrolytic electroplating, evaporation coating, printing, etc. Electrolytic electroplating has been widely used due to its relatively stable performance.

[0003] Taking the example of copper film coating on a wafer, in the prior art, a seed layer is usually formed on the wafer first, and then copper is electroplated on the seed layer. In order to obtain the largest possible copper coating area, the electrode only makes electrical contact with the seed layer at the edge of the wafer, and the current flows from the edge of the wafer to the center of the wafer, so that the entire wafer is coated.

[0004] However, the seed layer itself has resistance. When the current flows from the edge of the wafer to the center of the wafer through the seed layer, the current will gradually decrease as the flow distance increases. Therefore, positions at the same distance from the edge of the wafer have the same current and thus the same film thickness, while positions at different distances from the edge of the wafer have different film thicknesses, resulting in an obvious thickness difference between different circumferences of the wafer, which affects the uniformity of wafer coating. Summary of the Invention

[0005] An embodiment of the present application provides a wafer electroplating device, which can make the wafer coating more uniform.

[0006] The present application provides a wafer electroplating device, including: an electroplating tank for containing an electroplating solution, and a positive electrode is provided in the electroplating tank; a flow field plate is arranged between the positive electrode and the wafer, and the flow field plate is provided with a plurality of through holes for the electroplating solution to pass through to form a flow field. The flow field plate includes at least one flow field transition region, and each flow field transition region includes at least two flow field regions with different resistivities; wherein, the maximum resistivity in each flow field transition region is the minimum resistivity in the flow field on the side where the maximum resistivity is located in the adjacent two flow fields in the radial direction, or the minimum resistivity in the flow field transition region is the maximum resistivity in the flow field on the side where the minimum resistivity is located in the adjacent two flow fields in the radial direction, and the flow field region with the largest resistivity or the smallest resistivity in the flow field transition region extends to the boundary of the flow field on the side having the same resistivity as it.

[0007] Specifically, the maximum resistivity in the flow field transition region is the minimum resistivity in the flow field on the side where the maximum resistivity is located in the adjacent two flow fields, and the minimum resistivity in the flow field transition region is the maximum resistivity in the flow field on the side where the minimum resistivity is located in the adjacent two flow fields.

[0008] Specifically, the flow field plate includes a central region, and the flow field transition region is arranged around the central region.

[0009] Specifically, the resistivity is the same everywhere within the central region.

[0010] Specifically, each flow field transition region includes a plurality of flow field regions and fills the entire flow field transition region.

[0011] Specifically, the resistivity of any two adjacent flow field regions in each flow field transition region is different.

[0012] Specifically, there are multiple flow field regions with each resistivity value in each flow field transition region, and the flow field regions with the same resistivity are evenly distributed in the flow field transition region.

[0013] Specifically, each flow field transition region is annular.

[0014] Specifically, it includes a plurality of flow field transition regions, and the plurality of flow field transition regions are arranged adjacent to each other.

[0015] Specifically, the distance between the outer ring line of the outermost flow field transition region on the flow field plate and the center of the flow field plate is less than or equal to the radius of the wafer.

[0016] Specifically, in the radial direction of each flow field transition region, the flow field region with the maximum resistivity and / or the flow field region with the minimum resistivity occupy the largest proportion on the annular edge line on the side of the flow field transition region having the same resistivity as them.

[0017] Specifically, the flow field region with the maximum resistivity and / or the flow field region with the minimum resistivity occupy 100% on the annular edge line on the side of the flow field transition region having the same resistivity as them.

[0018] Specifically, on the 1 / 2 ring width line of each of the flow field transition regions, the proportion of the flow field regions with each resistivity value is equal.

[0019] Specifically, in the radial direction of each flow field transition region, the proportion of the flow field region with the maximum and / or minimum resistivity changes smoothly.

[0020] Specifically, in the radial direction of each flow field transition region, the proportion of the flow field region with the maximum and / or minimum resistivity changes in a stepped manner.

[0021] Specifically, for the flow field regions with the same resistivity in two adjacent flow field transition regions, the proportion in the radial direction increases first and then decreases.

[0022] Specifically, the at least two flow field regions are formed by equally dividing each flow field transition region along the circumferential direction.

[0023] Specifically, the through holes in at least some of the flow field regions in the flow field plate with the same resistivity are the same.

[0024] Specifically, the sizes of the through holes in at least some of the flow field regions in the flow field plate with different resistivities are different.

[0025] Specifically, the through-hole distribution density of at least some of the flow field regions with different resistivity in the flow field plate is different.

[0026] Specifically, the through-hole depth of at least some of the flow field regions with different resistivity in the flow field plate is different.

[0027] In the wafer electroplating device of the present application, there is at least one flow field transition region on the flow field plate. The resistivity in the flow field transition region is between the resistivities of the adjacent flow fields on both sides. The resistivity of the flow field transition region can provide a transition for the resistivities of the adjacent flow fields on both sides, so as to make the wafer coating more uniform.

[0028] Other features and advantages of the present application will become apparent from the following detailed description, or will be learned in part from the practice of the present application.

[0029] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The drawings herein are incorporated into the specification and form a part of the specification, showing embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts. In the drawings:

[0031] Figure 1 Shows a schematic structural diagram of a wafer electroplating device according to an embodiment of the present application;

[0032] Figure 2 Shows a schematic structural diagram of a flow field plate according to an embodiment of the present application;

[0033] Figure 3 Shows a schematic diagram of a flow field transition region according to an embodiment of the present application;

[0034] Figure 4 Shows a schematic structural diagram of a flow field plate according to an embodiment of the present application;

[0035] Figure 5 Shows a schematic structural diagram of a flow field plate according to an embodiment of the present application;

[0036] Figure 6 Shows a schematic structural diagram of a flow field plate according to an embodiment of the present application;

[0037] Figure 7 Shows a schematic diagram of a flow field transition region according to an embodiment of the present application;

[0038] Figure 8Shows a schematic diagram of the flow field transition region of an embodiment of the present application;

[0039] Figure 9 Shows a schematic diagram of the flow field transition region of an embodiment of the present application;

[0040] Figure 10 Shows a schematic diagram of the flow field plate structure of an embodiment of the present application.

[0041] Wherein, 1. wafer, 2. electroplating tank, 3. chuck, 4. flow field plate, 5. electroplating solution, 6. anode electrode, 7. cathode electrode, 41. central region, 42. flow field transition region, 421. flow field region Detailed implementation manners

[0042] Now, example embodiments will be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art.

[0043] In addition, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of the embodiments of the present application. However, those skilled in the art will realize that the technical solutions of the present application can be practiced without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, well-known methods, devices, implementations, or operations are not shown or described in detail to avoid obscuring aspects of the present application.

[0044] Please refer to Figures 1 to 10 , this embodiment provides a wafer electroplating device, which can improve the uniformity of the coating of the wafer 1.

[0045] As Figure 1As shown, the wafer electroplating apparatus includes an electroplating bath 2, a chuck 3 for holding and rotating the wafer 1, and a flow field plate 4 provided with a plurality of through holes. The electroplating solution 5 in the electroplating bath 2 contains coating cations, and an anode 6 is also provided in the electroplating bath 2. The electroplating solution 5 usually submerges the anode 6. The chuck 3 is provided with a cathode 7, and the chuck 3 is used to drive the wafer 1 into or out of the electroplating bath 2. The flow field plate 4 is disposed between the anode 6 and the wafer 1, and the electroplating solution 5 flows through the through holes on the flow field plate 4 to form a flow field on the flow field plate 4. The resistance of the flow field affects the number of cations passing through. If the resistance of the flow field is large, the number of cations passing through is small; if the resistance of the flow field is small, the number of cations passing through is large. When the anode 6 and the cathode 7 are energized, the coating cations in the electroplating solution 5 are deposited, and the deposited cations flow through the flow field to the cathode 7, and the cations adhere to the wafer 1 to form a coating. The flow field plate 4 is adapted to the shape of the electroplating bath 2 and can be square or circular. The range of the distribution of the through holes on the flow field plate 4 can be less than or equal to the area of the wafer 1. In other embodiments of the embodiments of the present application, the range of the distribution of the through holes on the flow field plate 4 can be greater than the area of the wafer 1, and it can be set as needed.

[0046] As Figure 2As shown, the flow field plate 4 includes a central region 41 and a flow field transition region 42 disposed around the central region 41. The resistivity of the flow field is the same everywhere within the central region 41, and there are multiple resistivities of the flow field in the flow field transition region 42. Part of the flow field in the flow field transition region 42 is taken as a flow field area, and the resistivity of the flow field is the same everywhere within the same flow field area. The flow field transition region 42 includes multiple flow field areas with different resistivities. For example, the flow field transition region 42 may include a flow field area 421 with a resistivity of R1 and a flow field area 422 with a resistivity of R2, and R1 < R2. In the radial direction of the flow field plate 4, the maximum resistivity in the flow field transition region 42 may be the minimum resistivity in the flow field on the side where the maximum resistivity in the adjacent two side flow fields 43 is located. For example, if the resistivities of one side flow field in the adjacent two side flow fields 43 include R0 and R1, and the resistivities of the other side flow field include R2 and R3, and R0 < R1 < R2 < R3, then the maximum resistivity in the adjacent two side flow fields 43 is R3, and the side flow field where the maximum resistivity in the adjacent two side flow fields 43 is located is the side flow field where the flow field area with a resistivity of R3 is located. Then the maximum resistivity in the flow field transition region 42 is the minimum resistivity R2 in the side flow field where the flow field area with a resistivity of R3 is located, so that the flow field transition region 42 has the same resistivity as the adjacent side flow field in the radial direction. The flow field area with the maximum resistivity in the flow field transition region 42 extends to the boundary of the side flow field with the same resistivity as it, so that the boundary has the same resistivity as the adjacent side flow field. For example, the flow field area 422 with a resistivity of R2 in the flow field transition region 42 extends to the boundary of the side flow field with a resistivity of R2, so that during the electroplating process, when electroplating the rotating wafer 1, the film layer formed by the cations passing through the flow field transition region 42 and the film layer formed by the cations passing through the side flow field where the maximum resistivity is located are smoothly transitioned at the boundary, so that the film layer thickness of the wafer 1 changes smoothly in the radial direction, reducing the thickness difference between different circumferences on the wafer 1 and improving the uniformity of the coating. In an implementation manner of the embodiment of the present application, if the resistivity of the side flow field where the maximum resistivity in the adjacent two side flow fields 43 is located is one kind, then the maximum resistivity in the flow field transition region 42 is the resistivity of the side flow field where the maximum resistivity is located, and the maximum resistivity in the flow field transition region 42 extends to the boundary of the side flow field where the maximum resistivity in the adjacent two side flow fields 43 is located. For example, if the resistivities of the adjacent two side flow fields 43 are R1 and R2 respectively, and R1 < R2, then the maximum resistivity in the flow field transition region 42 is the resistivity R2 of the side flow field where the maximum resistivity in the adjacent two side flow fields 43 is located, and the flow field area 422 with a resistivity of R2 in the flow field transition region 42 extends to the boundary of the side flow field where the maximum resistivity R2 in the adjacent two side flow fields 43 is located.

[0047] Specifically, the radial direction of the flow field plate 4 is the direction from the center of the flow field plate to the edge of the flow field plate, or the direction from the edge of the flow field plate to the center of the flow field plate. Hereinafter, the radial direction refers to the radial direction of the flow field plate 4. The adjacent two flow fields 43 of the flow field transition region 42 in the radial direction refer to the flow fields adjacent to the boundary of the flow field transition region 42 and located in the radial direction of the flow field transition region 42. The adjacent one-side flow field refers to the flow field adjacent to the inner boundary of the flow field transition region 42 or the flow field adjacent to the outer boundary of the flow field transition region 42. The inner boundary of the flow field transition region 42 refers to the boundary of the flow field transition region 42 that is closer to the center of the flow field plate, and the outer boundary of the flow field transition region 42 refers to the boundary of the flow field transition region 42 that is closer to the edge of the flow field plate. The center of the flow field plate refers to the position on the flow field plate 4 for passing the electroplating solution 5 for electroplating the center of the wafer 1. When the flow field plate 4 is circular, the center of the flow field plate can be the center of the circle of the flow field plate 4. The resistivity refers to the resistance value per unit area in the flow field plate 4. In other embodiments of the embodiments of the present application, the number of the flow field transition regions 42 can be multiple.

[0048] In the radial direction of the flow field plate 4, the minimum resistivity in the flow field transition region 42 can be the maximum resistivity in the flow field on the side where the minimum resistivity in the adjacent two-side flow fields 43 is located. The flow field region with the minimum resistivity in the flow field transition region 42 extends to the boundary of the flow field on the side having the same resistivity as it. For example, if the resistivities of one side flow field in the adjacent two-side flow fields 43 include R0 and R1, the resistivities of the other side flow field include R2 and R3, and R0 < R1 < R2 < R3, then the minimum resistivity in the adjacent two-side flow fields 43 is R0, the side flow field where the minimum resistivity in the adjacent two-side flow fields 43 is located is the side flow field where the flow field region with resistivity R0 is located, then the minimum resistivity in the flow field transition region 42 is the maximum resistivity R1 in the side flow field where the flow field region with resistivity R0 is located, and the flow field region 421 with resistivity R1 extends to the side flow field with resistivity R0, so that there is the same resistivity between the flow field transition region 42 and the side flow field where the minimum resistivity is located, and there is the same resistivity between the boundary and the side flow field where the minimum resistivity is located, thereby enabling the film layer formed by the cations passing through the flow field transition region 42 and the film layer formed by the cations passing through the side flow field where the minimum resistivity is located to smoothly transition at the boundary, improving the uniformity of the coating. The resistivity gradually increases from the side flow field where the minimum resistivity is located, through the flow field transition region 42, to the side flow field where the maximum resistivity is located. Compared with the case where the adjacent two-side flow fields 43 of the flow field transition region 42 are directly adjacent without the flow field transition region 42, it can make the change of the resistivity in the flow field plate 4 smoother, which is further beneficial to uniform coating. In an implementation manner of the embodiment of the present application, if the resistivity of the side flow field where the minimum resistivity in the adjacent two-side flow fields 43 is located is one kind, then the minimum resistivity in the flow field transition region 42 is the resistivity of the side flow field where the minimum resistivity is located, and the flow field region with the minimum resistivity in the flow field transition region 42 extends to the boundary of the side flow field where the minimum resistivity in the adjacent two-side flow fields 43 is located. For example, if the resistivities of the adjacent two-side flow fields 43 are R1 and R2 respectively, and R1 < R2, then the minimum resistivity in the flow field transition region 42 is the resistivity R1 of the side flow field where the minimum resistivity in the adjacent two-side flow fields 43 is located, and the flow field region with the minimum resistivity in the flow field transition region 42 extends to the boundary of the side flow field where the minimum resistivity R1 in the adjacent two-side flow fields 43 is located.

[0049] In the flow fields 43 on the adjacent two sides of the flow field transition region 42, the resistivity of each side flow field can be one or more. The resistivity in the flow field on the side where the maximum resistivity is located is greater than the resistivity in the flow field on the side where the minimum resistivity is located. For example, it can be that the resistivity of the inner flow field of the flow field transition region 42 is greater than that of the outer flow field, or it can be that the resistivity of the outer flow field of the flow field transition region 42 is greater than that of the inner flow field, where the inner flow field is the flow field closer to the center of the flow field plate than the flow field transition region 42, and the outer flow field is the flow field closer to the edge of the flow field plate than the flow field transition region 42. For example, if the resistivity at each location in the adjacent inner flow field is R1 and the resistivity at each location in the adjacent outer flow field is R2, and R1 < R2, then the flow field transition region 42 can include two flow field regions with resistivities of R1 and R2.

[0050] The number of flow field regions in the flow field transition region 42 can exceed two, the types of resistivity can exceed two, and the number of flow field regions with each resistivity can be one or more. Multiple flow field regions fill the flow field transition region 42 so that the coating thickness can be adjusted at each location in the flow field transition region 42. As Figure 3 shown, the number of types of resistivity can be 3, which are R1, R2, and R3 respectively, where R1 < R2 < R3. As Figure 4 shown, the number of types of resistivity can be 4, which are R1, R2, R3, and R4 respectively, where R1 < R2 < R3 < R4. In other embodiments of the embodiments of the present application, in the flow field transition region 42, there can be a gap between the flow field regions, that is, only a part of the positions in the flow field transition region 42 are transitioned, and when electroplating the rotating wafer 1, the uniformity of the film layer can also be improved.

[0051] Among the multiple flow field regions in the flow field transition region 42, the resistivity of any two adjacent flow field regions is different, so that the flow field regions with the same resistivity in the flow field transition region 42 are dispersedly arranged, enabling the plating ions with different concentrations passing through the flow field transition region 42 to be mutually doped, which is beneficial to uniform coating. Further, the flow field regions with the same resistivity are evenly distributed in each flow field transition region, further improving the coating uniformity. Wherein, each flow field region includes one row or multiple rows of through holes, and the through holes in the same flow field region are the same and evenly distributed. In each flow field transition region, the through holes in the flow field regions with the same resistivity are the same, which is convenient for drilling. In each flow field transition region, the flow field regions with different resistivities have one or more of different through hole sizes, different through hole distribution densities, and different through hole depths. Specifically, when the through hole distribution density is the same and the through hole depth is the same, the larger the aperture, the lower the resistivity, and the smaller the aperture, the higher the resistivity. When the through hole depth is the same and the aperture is the same, the denser the through hole distribution, the lower the resistivity, and the sparser the through hole distribution, the higher the resistivity. When the through hole distribution density is the same and the aperture is the same, and the smaller the through hole depth, the lower the resistivity, and the larger the through hole depth, the higher the resistivity. In other embodiments of the embodiments of the present application, the through holes in the flow field regions with the same resistivity may be different. For example, the resistivity of the flow field region with deeper and denser through holes may be equal to the resistivity of the flow field region with shallower and sparser through holes.

[0052] Referring again to Figure 4 , the flow field transition region 42 may be an annular shape surrounding the central region 41 (the boundary of the flow field transition region is shown as a dotted line in the figure), so that the circumferences of the wafer 1 corresponding to the flow field transition region 42 are evenly coated, further reducing the thickness difference between different circumferences on the wafer 1. The center of the annular flow field transition region 42 may coincide with the center of the flow field plate, so that the circumferences of the wafer 1 corresponding to the annular flow field transition region 42 are evenly coated.

[0053] The number of annular flow field transition regions 42 is multiple, and may be Figure 4 3 of them. The two radial sides of the 3 flow field transition regions are the inner and outer flow fields 43 respectively. The multiple annular flow field transition regions 42 are adjacent to each other, which can make the resistivity gradually change among the multiple annular flow field transition regions 42. In the multiple adjacent annular flow field transition regions 42, the resistivity may gradually transition along the radial direction of the flow field plate 4, so that the resistivity gradually transitions from the resistivity of the inner flow field 43 of the innermost annular flow field transition region 42 to the resistivity of the outer flow field 43 of the outermost annular flow field transition region 42. In other embodiments of the embodiments of the present application, there may be only one annular flow field transition region 42.

[0054] If from the center of the flow field plate to the edge of the flow field plate, the resistivity of the flow field continuously changes and the change trend remains the same, that is, always increasing from small to large or decreasing from large to small, then all the annular flow field transition regions 42 on the flow field plate 4 can be adjacent to each other.

[0055] If, from the center of the flow field plate to the edge of the flow field plate, the changing trend of the flow field resistivity changes, that is, the changing trend includes at least two of the three changing trends: the resistivity increases from small to large, the resistivity decreases from large to small, and the resistivity remains unchanged, then in the flow field of the flow field plate 4, in a part of the flow field where the resistivity continuously increases from small to large or continuously decreases from large to small, a plurality of annular flow field transition regions 42 are arranged adjacent to each other, and in a part of the flow field where the resistivity remains unchanged, the annular flow field transition regions 42 are not arranged.

[0056] For example, referring to Figure 5 , if, from the center of the flow field plate to the edge of the flow field plate, the resistivity first increases from small to large and then decreases from large to small, in the flow field where the resistivity continuously increases from small to large, the adjacent first inner annular flow field transition region 42a, the first middle annular flow field transition region 42b, and the first outer annular flow field transition region 42c are arranged in sequence. The minimum resistivity R2 in the first middle annular flow field transition region 42b is the maximum resistivity R2 in the first inner annular flow field transition region 42a. The flow field region with the minimum resistivity (being R2) in the first middle annular flow field transition region 42b extends to the inner ring edge line of the first middle annular flow field transition region 42b. The maximum resistivity R3 in the first middle annular flow field transition region 42b is the minimum resistivity R3 in the first outer annular flow field transition region 42c. The flow field region with the maximum resistivity (being R3) in the first middle annular flow field transition region 42b extends to the outer ring edge line of the first middle annular flow field transition region 42b. In the flow field where the resistivity continuously decreases from large to small, the adjacent second inner annular flow field transition region 42d, the second middle annular flow field transition region 42e, and the second outer annular flow field transition region 42f are arranged in sequence. The minimum resistivity R2 in the second middle annular flow field transition region 42e is the maximum resistivity R2 in the second outer annular flow field transition region 42f. The flow field region with the minimum resistivity (being R2) in the second middle annular flow field transition region 42e extends to the outer ring edge line of the second middle annular flow field transition region 42e. The maximum resistivity R3 in the second middle annular flow field transition region 42e is the minimum resistivity R3 in the second inner annular flow field transition region 42d. The flow field region with the maximum resistivity (being R3) in the second middle annular flow field transition region 42e extends to the inner ring edge line of the second middle annular flow field transition region 42e.

[0057] There may be other flow fields between the inner ring line of the innermost annular flow field transition zone 42 and the boundary of the central zone 41 in the flow field plate 4, and there may be other flow fields between the outer ring line of the outermost annular flow field transition zone 42 in the flow field plate 4 and the edge of the flow field plate. The distance between the outer ring line of the outermost flow field transition zone 42 on the flow field plate 4 and the center of the flow field plate may be less than or greater than the radius of the wafer 1. Since a certain distance is left between the flow field plate 4 and the wafer 1, when the cations move from the flow field plate 4 to the wafer 1, they will diffuse or gather according to the shape of the electroplating tank 2, so that the cations reach the wafer 1. In other implementations of the embodiments of the present application, such as Figure 6 As shown, the flow field plate 4 includes three flow field transition zones, namely 42g, 42f and 42h. The inner ring line of the innermost annular flow field transition zone 42g in the flow field plate 4 can be the boundary of the central area 41, and the distance between the outer ring line of the outermost flow field transition zone 42h on the flow field plate 4 and the center of the flow field plate can be equal to the radius of the wafer 1.

[0058] Continue to refer to Figure 6 , among the adjacent multiple annular flow field transition zones 42g, 42f and 42h, the maximum resistivity flow field area of ​​any flow field transition zone 42g, 42f and 42h has the largest proportion on the annular edge line of the adjacent flow field transition zone with the same resistivity, preferably 100%. For example, if Figure 5 In the flow field transition regions 42g, 42f and 42h, the resistivity R0 <R1<R2<R3<R4,则在流场过渡区42f中,电阻率为R2的流场区在同样具有电阻率R2流场区42h一侧的环线边上占比最大,也即电阻率为R2的流场区在流场过渡区42f的外环线上占比最大,以使该侧环边线上的电阻率为该流场过渡区42f中的最大电阻率,而与其具有相同电阻率的相邻流场过渡区42h中的电阻率均大于或等于该最大电阻率R2,该侧环边线可以为该流场过渡区42h和相邻流场过渡区42f提供过渡,使镀膜更加均匀。

[0059] Furthermore, in the radial direction of each flow field transition zone 42, the proportion of the flow field zone with the maximum resistivity changes smoothly, wherein the proportion of the flow field zone refers to the proportion of the flow field in the flow field zone to the length of the loop where the flow field is located. Specifically, the proportion of each flow field zone with the maximum resistivity changes smoothly. For example, if the size and depth of the through holes in the flow field zones with different resistivities are the same, but the number of through holes is different, along the radial direction, the proportion of the number of through holes in the flow field zone to the number of through holes in the loop where the through holes are located changes smoothly, and the arrangement of the through holes at the edge of the flow field zone 421 can be a smooth straight line or a smooth curve, such as Figure 7 As shown, it is further beneficial to uniform coating. In other embodiments of the present application, as Figure 8As shown, the proportion of the flow field region with the maximum resistivity can also change gradually in a stepped manner, that is, the proportion of the flow field region changes after the flow field region extends a certain distance along the radial direction of the flow field plate 4. The through holes located at the edge of the flow field region are arranged in a stepped manner. In other embodiments of the present application, the proportion of the flow field region with the maximum resistivity can also change gradually in a zigzag shape or other shapes.

[0060] Similarly, in multiple adjacent annular flow field transition regions 42, the proportion of the flow field region with the minimum resistivity in any one flow field transition region 42 is the largest on the annular side line on the side of the flow field transition region 42 with the same resistivity, preferably 100%, which can also make the coating more uniform. For example, if the minimum resistivity of a certain flow field transition region 42 is the same as the maximum resistivity in its adjacent outer flow field transition region 42, then the proportion of the flow field region with the minimum resistivity on the outer side line of this flow field transition region 42 is 100%. If the minimum resistivity of this flow field transition region 42 is the same as the maximum resistivity in its adjacent inner flow field transition region 42, then the proportion of the flow field region with the minimum resistivity on the inner side line of this flow field transition region 42 is 100%. Further, in the radial direction of each flow field transition region 42, the proportion of the flow field region with the minimum resistivity changes smoothly, in a stepped manner, or in other shapes gradually. In other embodiments of the present application, as Figure 8 shown, the annular side line of the flow field transition region 42 can include various resistivities.

[0061] Referring again to Figure 7 , on the 1 / 2 ring width line of each annular flow field transition region 42, the proportion of the flow field region with each resistivity is equal, so that the resistance value on the 1 / 2 ring width line of each annular flow field transition region 42 is between the resistance values of the two side lines, and the resistivity within each annular flow field transition region 42 changes gradually, which is further beneficial to uniform coating. For example, if the annular flow field transition region 42 includes two flow field regions with resistivities R1 and R2 respectively, and R1 < R2, then the proportions of the two flow field regions with resistivities R1 and R2 on the 1 / 2 ring width line of the annular flow field transition region 42 are each 50%.

[0062] Referring again to Figure 4 , in the adjacent two flow field transition regions 42, the proportion of the flow field region with the same resistivity in the radial direction first becomes smaller, then larger, and then smaller, so as to Figure 4Taking the flow field regions 423 and 424 with the middle resistivity of R3 as examples, since on two adjacent flow field transition regions 42, for the flow field regions with the same resistivity, the flow field region with the same resistivity is both the flow field region with the maximum resistivity in the flow field transition region 42 with a smaller resistivity and the flow field region with the minimum resistivity in the flow field transition region 42 with a larger resistivity. The proportion of the flow field region with the same resistivity in the radial direction increases first and then decreases, which can make the flow field regions with the same resistivity in two adjacent flow field transition regions 42 adjacent to each other, facilitating hole punching. Secondly, the resistivity of the flow field region with the same resistivity is the same on the circumferential edge line between two adjacent flow field transition regions 42 and on both sides of the circumferential edge line, which can reduce the resistivity jump on the circumferential edge line between two adjacent flow field transition regions 42 and is more conducive to uniform film coating.

[0063] In other embodiments of the embodiments of the present application, as Figure 10 shown, the flow field region 421 is equally divided by the flow field transition region 42.

[0064] After considering the specification and practicing the disclosed embodiments herein, those skilled in the art will readily conceive of other embodiments of the present application. The present application is intended to cover any variations, uses, or adaptations of the present application, which follow the general principles of the present application and include the common general knowledge or conventional technical means in the technical field not disclosed in the present application.

[0065] It should be understood that the present application is not limited to the exact structures described above and shown in the drawings, and various modifications and changes can be made without departing from its scope. The scope of the present application is only limited by the appended claims.

Claims

1. A wafer electroplating device, characterized in that, Comprising: An electroplating tank for containing an electroplating solution, and an anode is provided in the electroplating tank; A flow field plate is disposed between the anode and the wafer. The flow field plate is provided with a plurality of through holes for the electroplating solution to pass through to form a flow field. The flow field plate includes at least one flow field transition region, and each flow field transition region includes at least two flow field regions with different resistivities; Wherein, the maximum resistivity in each flow field transition region is the minimum resistivity in the flow field on the side where the maximum resistivity is located in the adjacent two flow fields in the radial direction, or the minimum resistivity in the flow field transition region is the maximum resistivity in the flow field on the side where the minimum resistivity is located in the adjacent two flow fields in the radial direction. The flow field region with the maximum resistivity or the minimum resistivity in the flow field transition region extends to the boundary of the flow field on the side with the same resistivity.

2. The wafer electroplating apparatus according to claim 1, wherein, The maximum resistivity in the flow field transition region is the minimum resistivity in the flow field on the side where the maximum resistivity is located in the adjacent two flow fields, and the minimum resistivity in the flow field transition region is the maximum resistivity in the flow field on the side where the minimum resistivity is located in the adjacent two flow fields.

3. The wafer electroplating apparatus according to claim 2, wherein The flow field plate includes a central region, and the flow field transition regions are arranged around the central region.

4. The wafer electroplating apparatus according to claim 3, wherein The resistivity is the same everywhere in the central region.

5. The wafer electroplating apparatus according to claim 2, wherein, Each flow field transition region includes a plurality of flow field regions and fills the entire flow field transition region.

6. The wafer electroplating apparatus according to claim 5, wherein, The resistivities of any two adjacent flow field regions in each flow field transition region are different.

7. The wafer electroplating apparatus according to claim 6, wherein There are multiple flow field regions with each resistivity in each flow field transition region, and the flow field regions with the same resistivity are evenly distributed in the flow field transition region.

8. The wafer electroplating apparatus according to claim 7, wherein, Each flow field transition region is annular.

9. The wafer electroplating apparatus according to claim 8, wherein, Including a plurality of flow field transition regions, and the plurality of flow field transition regions are arranged adjacent to each other.

10. The wafer electroplating apparatus according to claim 9, wherein, The distance between the outer ring line of the outermost flow field transition region on the flow field plate and the center of the flow field plate is less than or equal to the radius of the wafer.

11. The wafer electroplating apparatus according to claim 10, wherein, In the radial direction of each flow field transition region, the flow field region with the maximum resistivity and / or the minimum resistivity occupies the largest proportion on the circumferential edge line on the side of the flow field transition region with the same resistivity.

12. The wafer electroplating apparatus according to claim 11, wherein, The flow field region with the maximum resistivity and / or the minimum resistivity occupies 100% of the circumferential edge line on the side of the flow field transition region with the same resistivity.

13. The wafer electroplating apparatus according to claim 12, wherein On the 1 / 2 ring width line of each flow field transition region, the proportion of the flow field regions with each resistivity is equal.

14. The wafer electroplating apparatus according to claim 13, wherein, In the radial direction of each flow field transition region, the proportion of the flow field region with the maximum and / or minimum resistivity changes smoothly.

15. The wafer electroplating apparatus according to claim 13, wherein, In the radial direction of each flow field transition region, the proportion of the flow field region with the maximum and / or minimum resistivity changes in a stepped manner.

16. The wafer electroplating apparatus according to claim 13, wherein, The proportion of the flow field regions with the same resistivity in the adjacent two flow field transition regions changes from small to large and then to small in the radial direction.

17. The wafer electroplating apparatus according to claim 1, wherein, The at least two flow field regions are equally divided along the circumferential direction by each flow field transition region.

18. The wafer electroplating apparatus according to claim 1, wherein, The through holes in at least some of the flow field regions with the same resistivity in the flow field plate are the same.

19. The wafer electroplating apparatus according to claim 1, wherein, The sizes of the through holes in at least some of the flow field regions with different resistivities in the flow field plate are different.

20. The wafer electroplating apparatus according to claim 1, wherein, The distribution densities of the through holes in at least some of the flow field regions with different resistivities in the flow field plate are different.

21. The wafer electroplating apparatus according to claim 1, wherein The depths of the through holes in at least some of the flow field regions with different resistivities in the flow field plate are different.

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