Wafer bonder

Abstract

The application relates to the technical field of wafer bonding, and a wafer bonding machine, which comprises an upper cavity and a lower cavity, the upper cavity is arranged above the lower cavity, the upper cavity and the lower cavity form a sealed vacuum cavity, the upper cavity comprises a pressure applying cavity, an upper pressure head and a pressure applying assembly, the lower cavity comprises a lower cavity frame and a lower pressure head, the pressure applying assembly is arranged inside the pressure applying cavity, the upper pressure head is arranged inside the pressure applying assembly, the pressure applying cavity is filled with or discharged from gas to drive the pressure applying assembly and the upper pressure head to approach or move away from the lower pressure head, and the lower pressure head is arranged inside the lower cavity frame. After wafer pieces are bonded to each other, the pressure uniformity is good, local pressure is prevented from being too high or too low, and bonding defect circles caused by uneven pressure are reduced.

Description

Technical Field

[0001] This invention relates to the field of wafer bonding technology, and more particularly to a wafer bonding machine. Background Technology

[0002] During wafer fabrication, wafers often warp, resulting in a certain degree of warping. This warping refers to the warping deformation of the outermost edge of the wafer at its center. In existing wafer bonding machines, most of the bonding processes use direct pressure. However, after the wafers are bonded together, the pressure uniformity is poor, with some areas experiencing excessively high or low pressure, leading to bonding defects due to uneven pressure. Summary of the Invention

[0003] This invention provides a wafer bonding machine to solve the problem of bonding defects caused by uneven pressure due to poor pressure uniformity, excessively high or low local pressure in the prior art.

[0004] This invention provides a wafer bonding machine, including an upper cavity and a lower cavity. The upper cavity is disposed above the lower cavity, and the upper cavity and the lower cavity form a sealed vacuum cavity. The upper cavity includes a pressure chamber, an upper pressure head, and a pressure assembly. The lower cavity includes a lower cavity frame and a lower pressure head. The pressure assembly is disposed inside the pressure chamber, and the upper pressure head is disposed inside the pressure assembly. Gas is filled into or discharged from the pressure chamber to drive the pressure assembly and the upper pressure head to approach or move away from the lower pressure head. The lower pressure head is disposed inside the lower cavity frame.

[0005] According to the wafer bonding machine of the present invention, the pressure application assembly includes a first cavity frame, a first sealing groove and a second sealing groove; the first sealing groove and the second sealing groove are disposed around the outer periphery of the first cavity frame.

[0006] According to the wafer bonding machine of the present invention, the first sealing groove is a horizontal sealing groove, the second sealing groove is a vertical sealing groove, and the first sealing groove is disposed above or below the second sealing groove.

[0007] The wafer bonding machine according to the present invention further includes a first cooling pipe, which is disposed on the upper part of the first cavity frame.

[0008] The wafer bonding machine according to the present invention further includes an upper heating plate, a plurality of upper heating tubes, a lower heating plate, and a plurality of lower heating tubes; the upper heating plate is disposed inside the pressure application assembly, the upper heating plate is disposed above the upper pressure head, the upper heating tubes are embedded and stacked on the upper heating plate, the lower heating plate is disposed inside the lower cavity, the lower heating plate is disposed below the lower pressure head, and the lower heating tubes are embedded and stacked on the lower heating plate.

[0009] According to the wafer bonding machine of the present invention, the pressure chamber includes a second chamber frame, a filling and venting port, a first sealing mechanism and a second sealing mechanism; the first sealing mechanism and the second sealing mechanism are arranged on the upper part of the second chamber frame, and the first sealing mechanism and the second sealing mechanism are arranged inside the first sealing mechanism and the second sealing mechanism, and the filling and venting port is arranged in the middle of the second chamber frame.

[0010] The wafer bonding machine according to the present invention further includes multiple raised strips and multiple lower cavity cooling holes; multiple independent raised strips are provided at the bottom of the lower cavity; the lower cavity cooling holes are provided inside the raised strips, and the lower cavity cooling holes are filled with cooling material and controlled independently.

[0011] The wafer bonding machine according to the present invention further includes a vacuum pumping mechanism and a gas filling pipe; the vacuum pumping mechanism is disposed below the lower cavity, and the gas filling pipe is disposed at the lower part of the lower cavity.

[0012] The wafer bonding machine according to the present invention further includes a plurality of locking mechanisms, which are arranged around the outer periphery of the vacuum cavity. Beneficial effects

[0013] The combination of transverse and longitudinal sealing grooves effectively prevents gas leakage from different angles, and redundant sealing increases the reliability of the seal. It also enhances resistance to deformation, reducing the possibility of seal failure due to deformation.

[0014] Good pressure uniformity avoids excessively high or low local pressure, reduces bonding defects caused by uneven pressure, and improves bonding quality and consistency.

[0015] Precise pressure control enables precise control of bonding pressure by adjusting the pressure, meeting the pressure requirements of different wafer materials, sizes, and bonding processes, thus facilitating high-precision bonding.

[0016] Gas bonding is gentler, reducing mechanical damage and stress to the wafer, making it suitable for thin wafers or brittle materials and reducing the risk of breakage or deformation.

[0017] Stacked heating elements increase heat output, shorten heating time, improve work efficiency, and meet the needs of scenarios requiring rapid temperature rise. More uniform temperature distribution, with heat radiating from different positions or angles, makes the heating plate's temperature distribution more even, reducing temperature differences.

[0018] The internal cooling pipes of the raised strips allow for more precise temperature control of different areas of the lower heating plate, reducing temperature gradients and achieving more uniform cooling and heating. By controlling parameters such as the flow rate of the cooling pipes within different raised strips, precise local temperature control can be achieved to meet the varying temperature requirements of different parts in complex processes. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of the three-dimensional structure of a wafer bonding machine;

[0021] Figure 2 This is a cross-sectional view of a wafer bonding machine;

[0022] Figure 3 This is a schematic diagram of the three-dimensional structure of the lower cavity;

[0023] Figure 4 Schematic diagram of the upper cavity assembly Figure 1 ;

[0024] Figure 5 This is a cross-sectional view of the upper cavity and a schematic diagram of its structure.

[0025] Figure 6 Schematic diagram of the upper cavity assembly Figure 2 ;

[0026] Reference numerals: 1. Lower cavity; 2. Upper cavity; 3. Locking mechanism; 4. Handle; 11. Lower cavity frame; 12. Lower heating plate; 13. Lower heating tube; 14. Lower pressure head; 15. Shielding cover; 16. Inflation tube; 17. Vacuuming mechanism; 111. Raised strip; 112. Lower cavity cooling hole; 21. Pressure application assembly; 22. Upper heating plate; 23. Upper heating tube; 24. Upper pressure head; 25. Pressure application cavity; 211. First cavity frame; 212. First sealing groove; 213. Second sealing groove; 214. First cooling pipe; 251. Second cavity frame; 252. Second cooling pipe; 253. First sealing mechanism; 254. Second sealing mechanism; 255. Sensor sealing mechanism; 256. Inflation / depression hole. Detailed Implementation

[0027] The embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and should not be construed as limiting the scope of the invention.

[0028] In the description of the embodiments of the present invention, it should be noted that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0029] In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of the present invention based on the specific circumstances.

[0030] In embodiments of the present invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0031] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0032] The following is combined with Figure 1-6A wafer bonding machine according to an embodiment of the present invention includes an upper cavity 2 and a lower cavity 1. The upper cavity 2 is disposed above the lower cavity 1, forming a sealed vacuum cavity. The upper cavity 2 includes a pressure chamber 25, an upper pressure head 24, and a pressure assembly 21. The lower cavity 1 includes a lower cavity frame 11 and a lower pressure head 14. The pressure assembly 21 is disposed inside the pressure chamber 25, and the upper pressure head 24 is disposed inside the pressure assembly 21. Gas is filled or discharged inside the pressure chamber 25 to drive the pressure assembly 21 and the upper pressure head 24 to approach or move away from the lower pressure head 14. The lower pressure head 14 is disposed inside the lower cavity frame 11. The wafer workpiece is placed on the lower pressure head. Gas filling drives the upper pressure head 24 and the lower pressure head 14 to bond, resulting in good pressure uniformity, avoiding excessively high or low local pressure, reducing bonding defects caused by uneven pressure, and improving bonding quality and consistency. Precise pressure control allows for precise adjustment of bonding pressure to meet the pressure requirements of different wafer materials, sizes, and bonding processes, facilitating high-precision bonding. Gas-filled bonding is gentler, reducing mechanical damage and stress to the wafer, making it suitable for thin wafers or brittle materials and minimizing the risk of breakage or deformation. A handle 4 is provided in the upper cavity 2 for opening it. A shielding cover 15 is installed inside the lower cavity 2 and is positioned around the lower heating plate 12.

[0033] In some embodiments, the pressure application component 21 includes a first cavity frame 211, a first sealing groove 212, and a second sealing groove 213; the first sealing groove 212 and the second sealing groove 213 are provided around the outer periphery of the first cavity frame 211.

[0034] In some embodiments, the first sealing groove 212 is a transverse sealing groove, and the second sealing groove 213 is a longitudinal sealing groove, with the first sealing groove 212 positioned above or below the second sealing groove 213. The combination of the transverse and longitudinal sealing grooves effectively prevents gas leakage from different angles, and the redundant sealing increases the reliability of the seal. It also enhances resistance to deformation, reducing the possibility of seal failure due to deformation.

[0035] In some embodiments, a first cooling pipe 214 is also included, and the first cooling pipe 214 is disposed on the upper part of the first cavity frame 211.

[0036] In some embodiments, the system further includes an upper heating plate 22, a plurality of upper heating tubes 23, a lower heating plate 12, and a plurality of lower heating tubes 13. The upper heating plate 22 is disposed inside the pressure application assembly 21, above the upper pressure head 24, and the upper heating tubes 23 are embedded and stacked within the upper heating plate 22. The lower heating plate 12 is disposed inside the lower cavity 1, below the lower pressure head 14, and the lower heating tubes 13 are embedded and stacked within the lower heating plate 12. The stacking of heating tubes, i.e., the stacking of the upper heating tubes 23 and the stacking of the lower heating tubes 13, increases heat output, shortens heating time, improves working efficiency, and meets the requirements of scenarios requiring rapid temperature rise. The temperature distribution is more uniform, radiating heat from different positions or angles, making the temperature distribution of the heating plate more uniform and reducing temperature differences.

[0037] In some embodiments, the pressure chamber 25 includes a second chamber frame 251, an inflation / deflation port 256, a first sealing mechanism 253, and a second sealing mechanism 254; the first sealing mechanism 253 and the second sealing mechanism 254 are provided on the upper part of the second chamber frame 251, and guide rods and cooling pipes for the pressure application components are provided inside the first sealing mechanism 253 and the second sealing mechanism 254, and the inflation / deflation port 256 is provided in the middle of the second chamber frame 251.

[0038] In some embodiments, the system further includes multiple raised strips 111 and multiple lower cavity cooling holes 112. Multiple independent raised strips 111 are provided at the bottom of the lower cavity 1. Lower cavity cooling holes 112 are provided inside the raised strips 111, and are filled with cooling material and controlled independently. The independent raised strips 111 with cooling pipes (i.e., lower cavity cooling holes 112) allow for more precise temperature adjustment of different areas of the lower heating plate 12, reducing temperature gradients and achieving more uniform cooling and heating effects. By controlling parameters such as the flow rate of the cooling pipes within different raised strips 111, precise local temperature control can be achieved, meeting the different temperature requirements of different parts in complex processes.

[0039] In some embodiments, a vacuuming mechanism 17 and an inflation tube 16 are also included; the vacuuming mechanism 17 is provided below the lower cavity 1, and the inflation tube 16 is provided at the lower part of the lower cavity 1.

[0040] In some embodiments, a plurality of locking mechanisms 3 are also included, with locking mechanisms 3 provided around the outer periphery of the vacuum cavity.

[0041] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wafer bonding machine, comprising an upper cavity and a lower cavity, the upper cavity being disposed above the lower cavity, the upper cavity and the lower cavity forming a sealed vacuum cavity, characterized in that, The upper cavity includes a pressure chamber, an upper pressure head, and a pressure assembly. The lower cavity includes a lower cavity frame and a lower pressure head. The pressure assembly is disposed inside the pressure chamber. The upper pressure head is disposed inside the pressure assembly. Gas is filled into or discharged from the pressure chamber to drive the pressure assembly and the upper pressure head to approach or move away from the lower pressure head. The lower pressure head is disposed inside the lower cavity frame. The pressure-applying assembly includes a first cavity frame, a first sealing groove, and a second sealing groove; the first sealing groove and the second sealing groove are provided around the outer perimeter of the first cavity frame; The first sealing groove is a horizontal sealing groove, the second sealing groove is a vertical sealing groove, and the first sealing groove is disposed above or below the second sealing groove; It also includes multiple raised strips and multiple lower cavity cooling holes; multiple independent raised strips are provided at the bottom of the lower cavity; the lower cavity cooling holes are provided inside the raised strips, and the lower cavity cooling holes are filled with cooling material and controlled independently.

2. The wafer bonding machine according to claim 1, characterized in that, It also includes a first cooling pipe, which is disposed on the upper part of the first cavity frame.

3. The wafer bonding machine according to claim 1, characterized in that, It also includes an upper heating plate, multiple upper heating tubes, a lower heating plate, and multiple lower heating tubes; the upper heating plate is disposed inside the pressure application assembly, the upper heating plate is disposed above the upper pressure head, the upper heating tubes are embedded and stacked on the upper heating plate, the lower heating plate is disposed inside the lower cavity, the lower heating plate is disposed below the lower pressure head, the lower heating plate is embedded and stacked on the lower heating tubes.

4. The wafer bonding machine according to claim 1, characterized in that, The pressurizing chamber includes a second chamber frame, an inflation / deflation port, a first sealing mechanism, and a second sealing mechanism; the first sealing mechanism and the second sealing mechanism are arranged on the upper part of the second chamber frame, and the first sealing mechanism and the second sealing mechanism are provided with guide rods and cooling pipes for the pressurizing components inside the first sealing mechanism and the second sealing mechanism, and the inflation / deflation port is arranged in the middle of the second chamber frame.

5. The wafer bonding machine according to claim 1, characterized in that, It also includes a vacuuming mechanism and an inflation tube; the vacuuming mechanism is located below the lower cavity, and the inflation tube is located at the lower part of the lower cavity.

6. The wafer bonding machine according to claim 1, characterized in that, It also includes multiple locking mechanisms, which are arranged around the outer perimeter of the vacuum cavity.

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