Flow uniformizing plate capable of adjusting airflow direction and wafer etching device

By setting up an air control unit in the flow guide channel of the uniform plate and independently controlling the direction of the air holes, the problem that the uniform plate cannot flexibly adjust the air flow direction is solved, and the wafer etching effect is improved.

CN120261355APending Publication Date: 2025-07-04SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD
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Patent Information

Application Number
CN202510621993.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-05-14
Publication Date
2025-07-04

AI Technical Summary

Technical Problem

The existing uniform plates cannot flexibly adjust the airflow direction, resulting in unsatisfactory wafer etching effect.

Method used

A uniform flow plate that can adjust the direction of the air flow is designed. By setting up an air control unit in the flow channel, the orientation of each air hole is independently controlled to achieve flexible adjustment of the flow direction of the process gas.

Benefits of technology

The effect of wafer etching is improved, and the airflow direction can be flexibly adjusted according to the wafer surface etching situation, thereby improving etching uniformity and efficiency.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides a flow uniformizing plate capable of adjusting the airflow direction and a wafer etching device, and the flow uniformizing plate capable of adjusting the airflow direction comprises a plate main body which is provided with a plurality of flow guide channels which are used for guiding process gas; and the multiple air control units are movably arranged in the corresponding flow guide channels, each air control unit is provided with an air hole used for conveying process gas, the air holes are communicated with the flow guide channels, and when the air control units move, the directions of the air holes can be changed. According to the flow uniformizing plate capable of adjusting the airflow direction, the multiple air control units are movably arranged in the corresponding flow guide channels, each air control unit is independently controlled, and therefore the orientation of each air hole can be independently adjusted, and flexible adjustment of the flow direction of process gas is achieved. Therefore, when the flow uniformizing plate is used in the wafer etching device, the etching effect of the wafer is greatly improved.
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Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and particularly to a flow equalizing plate with adjustable gas flow direction and a wafer etching device. Background Art

[0002] In the semiconductor etching process, process gas enters the interior of the cavity from the top of the cavity through a flow equalizing plate for etching. The function of the flow equalizing plate is to evenly distribute the process gas. If the process gas is not evenly distributed, it will have a greater impact on the etching rates of different regions on the wafer, thereby affecting the effect after wafer etching.

[0003] Traditional flow equalizing plates are discs with many circular through holes. Although they can ensure relatively uniform gas flow into the cavity, they lack the ability to flexibly adjust the gas flow direction. For example, when there are differences in the etching results at different positions on the wafer during the process, the gas flow during etching cannot be adjusted at any time, resulting in an unsatisfactory wafer etching effect. Currently, in the research on adjusting the gas flow direction inside the etching cavity, some people have adopted the design of vane-type flow deflectors, which can adjust the gas flow direction to a certain extent, but the adjustment range is relatively fixed, and the gas flow on different regions of the wafer cannot be flexibly controlled. Summary of the Invention

[0004] The purpose of the present invention is to provide a flow equalizing plate with adjustable gas flow direction and a wafer etching device, which can flexibly adjust the flow direction of the process gas and improve the etching effect of the wafer.

[0005] To achieve the above purpose, in the first aspect, the present invention provides a flow equalizing plate with adjustable gas flow direction, including: A plate body main part, provided with a plurality of flow guiding channels for guiding the process gas; A plurality of gas control units, movably arranged in the corresponding flow guiding channels. The gas control units have air holes for conveying the process gas, and the air holes are communicated with the flow guiding channels. When the gas control units move, the orientation of the air holes can be changed.

[0006] The beneficial effect of the flow equalizing plate provided by the present invention is that: by movably arranging a plurality of gas control units in the corresponding flow guiding channels and independently controlling each gas control unit, the orientation of each air hole can be adjusted separately, realizing flexible adjustment of the flow direction of the process gas. Therefore, when this flow equalizing plate is used in a wafer etching device, the etching effect of the wafer is greatly improved.

[0007] In some embodiments, the flow guiding channels have circular receiving grooves; The pneumatic control unit includes a driver and a baffle. The baffle is in an arc shape and is concentrically arranged with the receiving groove. The baffle is rotatably located in the receiving groove. The air hole is provided on the baffle, and the driver is used to control the rotation of the baffle. The beneficial effects are as follows: By providing a circular receiving groove in the diversion channel, setting the baffle to be in an arc shape, and concentrically arranging the baffle with the receiving groove, it is avoided that the baffle interferes in the diversion channel during rotation, ensuring the reliability of the baffle during rotation, and thus ensuring the reliability of adjusting the flow direction of the process gas. Moreover, by setting the receiving groove to be circular, when the process gas enters the receiving groove, it can play a certain buffering role for the process gas, slowing down the flow rate of the process gas, so that the process gas is more fully mixed in the receiving groove, improving the uniformity of the process gas mixing.

[0008] In some embodiments, an annular installation groove is formed on the inner side wall of the receiving groove; The driver includes a driving motor oppositely arranged in the installation groove. The rotating shaft of the driving motor is fixedly connected to the baffle and is used to drive the baffle to rotate along the axial direction of the rotating shaft. The beneficial effects are as follows: By providing an annular installation groove on the inner side wall of the receiving groove for installing the driving motor, and the rotating shaft of the driving motor is fixedly connected to the baffle, the position of the air hole on the baffle can be rotationally adjusted.

[0009] In some embodiments, the driver further includes a slide rail and a slider. The slide rail is located in the installation groove and is arranged along the extending direction of the installation groove, and the slider is slidably arranged on the slide rail; The driving motor is arranged on the slider; When the slider moves on the slide rail, it will drive the driving motor and the baffle to rotate in the plane where the slide rail is located. The beneficial effects are as follows: By providing an annular slide rail in the installation groove and arranging the driving motor on the slider, when the slider moves, it can drive the baffle to rotate in the plane where the slide rail is located, further improving the flexibility of adjusting the orientation of the air hole.

[0010] In some embodiments, the bottom of the diversion channel has a diversion hole, and the diameter of the diversion hole gradually increases in the direction away from the receiving groove; The edge of the air hole has an annular limiting convex part; When the driver drives the baffle to rotate, the limiting convex part can contact the inner side wall of the diversion hole. The beneficial effects are as follows: By gradually increasing the diameter of the diversion hole in the direction away from the receiving groove, it is avoided that the inner wall of the diversion hole interferes with the process gas. And by providing an annular limiting convex part at the edge of the air hole, it is used to limit the rotation angle of the baffle, so as to improve the accuracy of controlling the flow direction and the spraying area of the process gas.

[0011] In some embodiments, in the initial state, the included angle between the limiting convex portion and the diversion hole ranges from 20° to 30°. The beneficial effect is that by controlling the rotation angle of the limiting baffle within the range of 20° to 30°, the accuracy of controlling the flow direction of the process gas and the area of the injection region can be improved.

[0012] In some embodiments, the connection between the limiting convex portion and the edge of the air hole is subjected to passivation treatment; and / or, both ends of the receiving groove are subjected to passivation treatment. The beneficial effect is that by passivating the connection between the limiting convex portion and the edge of the air hole; and / or, passivating both ends of the receiving groove, the process gas can flow more smoothly in the receiving groove and the baffle, avoiding the occurrence of a vortex area, resulting in uneven speed and even causing turbulence.

[0013] In some embodiments, the flow equalizing plate further includes a flow control member; The flow control member is disposed on the plate body and is used to control the flow rate of the process gas. The beneficial effect is that by providing a flow control member to control the flow rate of the process gas, the wafer can be etched better.

[0014] In some embodiments, the flow control member includes a flow control plate and a rotation motor; The flow control plate is of a hemispherical structure, and the diameter of the flow control plate is smaller than the diameter of the baffle. A flow control hole is formed at the bottom of the flow control plate; The rotation motors are oppositely disposed on the inner side wall of the baffle, and the rotation shafts of the rotation motors all face the center of the receiving groove and are connected to the flow control plate. The beneficial effect is that by providing a rotation motor and a flow control plate, the flow rate of the process gas can be flexibly adjusted.

[0015] In some embodiments, the plate body includes a top plate and a bottom plate, and the top plate and the bottom plate are detachably connected; A plurality of the air control units are disposed between the top plate and the bottom plate. The beneficial effect is that by forming the plate body by detachably connecting the top plate and the bottom plate, the installation and replacement of the air control units are facilitated.

[0016] In a second aspect, the present invention provides a wafer etching device, including a process chamber and the flow equalizing plate as described above. The process chamber is used to hold a wafer, and the flow equalizing plate is used to control the flow direction of the process gas towards the wafer.

[0017] The beneficial effects of the wafer etching device provided by the present invention are as follows: By movably arranging a plurality of gas control units in corresponding diversion channels and independently controlling each gas control unit, the orientation of each air hole can be adjusted separately, realizing flexible adjustment of the flow direction of process gas. Therefore, when etching the wafer in the process chamber, the flow equalizing plate can adjust the flow direction of the process gas according to the actual etching situation, thus greatly improving the etching effect of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 FIG. is a schematic structural diagram of the flow equalizing plate according to the embodiment provided by the present invention; Figure 2 FIG. is a cross-sectional view of the flow equalizing plate according to the embodiment provided by the present invention along its axial direction; Figure 3 FIG. is a cross-sectional view of a single diversion channel with a gas control unit installed along its axial direction according to the embodiment provided by the present invention; Figure 4 FIG. is a cross-sectional view of a single diversion channel with a gas control unit installed along its radial direction according to the embodiment provided by the present invention; Figure 5 is in Figure 4 FIG. is a schematic diagram after rotating the gas control unit 90° along the plane where the slide rail is located on the basis of the schematic diagram; Figure 6 is in Figure 3 FIG. is a schematic diagram after rotating the gas control unit 90° along the plane where the slide rail is located on the basis of the schematic diagram; Figure 7 FIG. is a schematic structural diagram of the flow control member according to the embodiment provided by the present invention; Figure 8 FIG. is a schematic structural diagram of another flow control member according to the embodiment provided by the present invention; Figure 9 FIG. is a schematic structural diagram of the embodiment provided by the present invention after installing the flow control member on the flow equalizing member.

[0019] Reference Signs: Plate body 1, Diversion channel 11, Accommodation groove 111, Diversion hole 112, Installation groove 12, Gas control unit 2, Driver 21, Driving motor 211, Slide rail 212, Slide block 213, Baffle 22, Air hole 221, Limit protrusion 222, Flow control member 3, Flow control plate 31, Flow control hole 311, Airflow cover 32, Embedding part 321, Flow control channel 322, Rotating motor 33. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely below. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art to which the present invention pertains. The words such as "including" used herein mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items.

[0021] In addition, it should be understood that the orientation or positional relationships indicated by "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. in this article are based on the orientation or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation to the present invention. The "first" and "second" in this article are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise stated, the meaning of "a plurality" is two or more.

[0022] Currently, in the wafer etching process, the angle range for adjusting the air flow direction inside the etching chamber is limited, and the flow direction of the process gas cannot be flexibly adjusted according to the actual situation of the wafer surface etching, resulting in an unsatisfactory wafer etching effect.

[0023] To solve the problems existing in the prior art, the embodiments of the present invention provide a flow equalizing plate with adjustable air flow direction, referring to Figure 1 and Figure 2As shown in the figure, the flow equalizing plate includes a plate body 1 and a number of air control units 2. Among them, the plate body 1 is of a disc-shaped structure, and a number of flow guiding channels 11 are formed on the surface of the plate body 1. The number of the flow guiding channels 11 is equal to that of the air control units 2. A number of the air control units 2 are movably arranged in the corresponding flow guiding channels 11. The air control unit 2 has air holes 221 for transporting process gas. The air holes 221 are communicated with the flow guiding channels 11. When the air control unit 2 moves, the orientation of the air holes 221 can be changed, so as to change the flow direction of the process gas.

[0024] In this embodiment, the air control unit 2 is a micro electric control unit. By movably arranging a number of the air control units 2 in the corresponding flow guiding channels 11 and independently controlling each air control unit 2, the orientation of each air hole 221 can be adjusted separately, so as to flexibly adjust the flow direction of the process gas. Therefore, when the flow equalizing plate is used in a wafer etching device, the etching effect of the wafer is greatly improved.

[0025] For example, during the wafer etching process, when it is detected that there are differences in the structures etched in different regions on the wafer surface, it is necessary to separately control the orientation of each air hole 221 to adjust the gas flow of the process gas during etching. Specifically, when it is detected that the structure etched in one region on the wafer surface is deeper and the structure etched in another region is shallower, the controller can control a small part of the air holes 221 to face the region with a deeper structure on the wafer surface and control most of the air holes 221 to face the region with a shallower structure on the wafer surface, so as to improve the final etching effect of the wafer.

[0026] In some embodiments, the flow guiding channel 11 has a circular receiving groove 111, and the receiving groove 111 is located in the middle of the flow guiding channel 11. The air control unit 2 includes a driver 21 and a baffle 22. The baffle 22 is of an arc-shaped structure, and the baffle 22 is concentrically arranged with the receiving groove 111 and is rotatably located in the receiving groove 111. The air holes 221 are arranged at the bottom of the baffle 22, and the driver 21 is arranged on the plate body 1 for controlling the rotation of the baffle 22.

[0027] In this embodiment, the baffle 22 is specifically a hemispherical structure. By providing the circular receiving groove 111 in the diversion channel 11 and concentrically arranging the baffle 22 with the receiving groove 111, interference of the baffle 22 in the diversion channel 11 during rotation is avoided, ensuring the reliability of the baffle 22 during rotation, and thus ensuring the reliability of adjusting the flow direction of the process gas. Moreover, by setting the receiving groove 111 to be circular, the internal space is increased. When the process gas enters the receiving groove 111, it can play a certain buffering role on the process gas, slowing down the flow rate of the process gas, enabling the process gas to mix more fully in the receiving groove 111, improving the uniformity of the process gas mixing, and thus ensuring the effect during wafer etching.

[0028] It should be noted that the gap between the outer sidewall of the baffle 22 and the receiving groove 111 should be set as small as possible to ensure that the process gas is transported out through the baffle 22.

[0029] Reference Figures 1 to 3 As shown, in some embodiments, an annular installation groove 12 is formed in the inner sidewall of the receiving groove 111, and the center of the installation groove 12 is the same as the center of the receiving groove 111. The driver 21 includes two driving motors 211 oppositely arranged in the installation groove 12. The rotating shafts of the two driving motors 211 both face the center of the receiving groove 111, and the rotating shaft of the driving motor 211 is fixedly connected to the baffle 22 for driving the baffle 22 to rotate along the axial direction of the rotating shaft.

[0030] In this embodiment, the driving motor 211 can be a servo motor. By providing the annular installation groove 12 on the inner sidewall of the receiving groove 111 for installing the driving motor 211, the internal space of the plate body 1 is reasonably utilized. The rotating shaft of the driving motor 211 is fixedly connected to the baffle 22. When the driving motor 211 drives the baffle 22 to rotate, the position of the air holes 221 on the baffle 22 is rotationally adjusted.

[0031] Furthermore, the driver 21 further includes a slide rail 212 and a slider 213. The slide rail 212 is a circular sliding track, and the slide rail 212 is fixedly arranged in the installation groove 12 and has the same center as the installation groove 12. The slider 213 is slidably disposed on the slide rail 212, and the driving motor 211 is disposed on the slider 213. When the slider 213 moves on the slide rail 212, it will drive the driving motor 211 and the baffle 22 to rotate in the plane where the slide rail 212 is located.

[0032] In this embodiment, the slider 213 can be an electrically controlled slider 213. By arranging the annular slide rail 212 in the installation groove 12 and setting the drive motor 211 on the slider 213, when controlling the slider 213 to move along the extension direction of the slide rail 212, the baffle 22 can be driven to rotate on the plane where the slide rail 212 is located, so as to further improve the flexibility of adjusting the orientation of the air hole 221 and realize the adjustment of the air hole 221 in various directions within a certain range.

[0033] Combined with Figure 4 、 Figure 5 and Figure 6 As shown, for example, in this embodiment, according to actual needs, the slider 213 is controlled to rotate 90° along the slide rail 212, so as to drive the drive motor 211 and the baffle 22 to rotate 90° on the plane where the slide rail 212 is located. Then, the drive motor 211 drives the baffle 22 to rotate to realize the adjustment of the orientation of the air hole 221.

[0034] Refer to Figure 3 As shown, in some embodiments, the bottom of the diversion channel 11 has a diversion hole 112, the diversion hole 112 communicates with the accommodation groove 111, and the diameter of the diversion hole 112 gradually increases in the direction away from the accommodation groove 111, forming a frustum-shaped hole structure. The edge of the air hole 221 has an annular limit protrusion 222, the diameter of the limit protrusion 222 gradually increases in the direction away from the accommodation groove 111, and the inclination angle of the limit protrusion 222 is the same as the inclination angle of the diversion hole 112. When the driver 21 drives the baffle 22 to rotate, the limit protrusion 222 can contact the inner side wall of the diversion hole 112.

[0035] In this embodiment, by setting the diameter of the diversion hole 112 to gradually increase in the direction away from the accommodation groove 111, the inner wall of the diversion hole 112 is prevented from interfering with the process gas and affecting the transportation of the process gas. And by arranging the annular limit protrusion 222 at the edge of the air hole 221, the rotation angle of the baffle 22 is limited to improve the accuracy of controlling the flow direction and the spraying area of the process gas.

[0036] Furthermore, refer to Figure 6 As shown, in the initial state, the included angle range between the limit protrusion 222 and the diversion hole 112 is between 20° and 30°.

[0037] In this embodiment, the initial state refers to the state when the air hole 221 faces vertically downward. At this time, the included angle a between the limiting convex portion 222 and the inner wall of the diversion hole 112 ranges from 20° to 30°. By limiting the rotation angle, the dispersion during air flow transportation is avoided, ensuring the accuracy of controlling the area of the spraying region.

[0038] In some embodiments, the connection between the limiting convex portion 222 and the edge of the air hole 221 is subjected to a passivation treatment, and / or both ends of the receiving groove 111 are subjected to a passivation treatment.

[0039] In this embodiment, a fillet is formed at the connection between the limiting convex portion 222 and the edge of the air hole 221, and fillets are also formed at the upper and lower ends of the receiving groove 111.

[0040] It can be understood that by setting a passivation treatment at the turning points of the structure, the situation where the air flow is prone to flow separation or form a vortex region when flowing through a sharp structure is avoided, resulting in uneven velocity and even causing turbulence. Therefore, in this embodiment, when the process gas flows out from the diversion channel 11 and the air hole 221, the air flow is smoother and the flow velocity is more uniform.

[0041] Reference Figure 3 、 Figure 7 and Figure 8 In some embodiments, the flow equalizing plate further includes a flow control member 3. The flow control member 3 is disposed on the top surface of the plate body 1 and is used to control the flow rate of the process gas.

[0042] In this embodiment, the flow control member 3 is a flow control plate 31, as Figure 7 shown. Flow control holes 311 are formed in the flow control plate 31. There are several flow control plates 31, and the sizes of the flow control holes 311 on each flow control plate 31 are different. When it is necessary to adjust the flow rate of the process gas, the corresponding flow control plate 31 is selected and installed on the top surface of the plate body 1, thereby realizing the adjustment of the flow rate of the process gas.

[0043] In some embodiments, the flow control member 3 is an air flow cover 32, as Figure 8As shown. The air flow cover 32 has an embedding part 321 which is adapted to the top area of the diversion channel 11 so that the embedding part 321 can be inserted into the top of the diversion channel 11. The air flow cover 32 is provided with a flow control channel 322 which penetrates through the embedding part 321. Wherein, the number of the air flow covers 32 is several, and the diameters of the flow control channels 322 on each air flow cover 32 are different, resulting in different thicknesses of the embedding part 321. When it is necessary to adjust the flow rate of the process gas, by selecting the corresponding air flow cover 32 and installing the air flow cover 32 on the top surface of the plate body 1, the adjustment of the flow rate of the process gas is realized.

[0044] Further, the bottom of the embedding part 321 can be set to an arc structure, and the curvature of the arc structure is the same as that of the receiving groove 111 to ensure the smoothness of the process gas transportation.

[0045] Reference Figure 9 As shown in the reference, in some other embodiments, the flow control member 3 includes a flow control plate 31 and a rotating motor 33. At this time, the flow control plate 31 is a hemispherical structure, and the diameter of the flow control plate 31 is smaller than the diameter of the baffle 22. The bottom of the flow control plate 31 is provided with a flow control hole 311, and the diameter of the flow control hole 311 is larger than the diameter of the air hole 221. The two rotating motors 33 are relatively arranged on the inner side wall of the baffle 22 and both face the center of the receiving groove 111. The flow control plate 31 is connected to the rotating shaft of the rotating motor 33. When the rotating motor 33 drives the flow control plate 31 to rotate, the size of the air hole 221 can be adjusted, thereby realizing the adjustment of the flow rate of the process gas.

[0046] In this embodiment, the rotating motor 33 can be a servo motor.

[0047] In some embodiments, the plate body 1 includes a top plate and a bottom plate, and the top plate and the bottom plate are detachably connected, and several air control units 2 are arranged between the top plate and the bottom plate.

[0048] In this embodiment, by forming the plate body 1 by detachably connecting the top plate and the bottom plate, it is convenient for the installation and replacement of the air control unit 2.

[0049] In another embodiment provided by the present invention, a wafer etching device is provided, which includes a process chamber and the flow equalizing plate. A carrier is provided in the process chamber for placing a wafer, and the flow equalizing plate is used to control the flow direction of the process gas towards the wafer.

[0050] In this embodiment, when etching the wafer in the process chamber, the flow equalizing plate can adjust the flow direction of the process gas according to the actual etching situation, thereby greatly improving the etching effect of the wafer.

[0051] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present invention as described. Moreover, the present invention described herein can have other embodiments and can be implemented or realized in various ways.

Claims

1. An air distribution plate with adjustable air flow direction, characterized in that, Comprising: A plate body, provided with a plurality of flow guiding channels for guiding process gas; A plurality of gas control units movably disposed in corresponding flow guiding channels, the gas control units having air holes for conveying process gas, the air holes communicating with the flow guiding channels, and when the gas control units move, the air holes can change their orientations.

2. The flow equalizing plate according to claim 1, characterized in that, The flow guiding channel has a circular receiving groove; The gas control unit includes a driver and a baffle, the baffle is an arc-shaped structure, the baffle is concentrically arranged with the receiving groove, and the baffle is rotatably located in the receiving groove, the air hole is provided on the baffle, and the driver is used to control the rotation of the baffle.

3. The flow equalizing plate according to claim 2, characterized in that, An annular installation groove is provided on the inner side wall of the receiving groove; The driver includes drive motors oppositely arranged in the installation groove, the rotating shafts of the drive motors are fixedly connected to the baffle, and are used to drive the baffle to rotate along the axial direction of the rotating shaft.

4. The flow equalizing plate according to claim 3, wherein, The driver further includes a slide rail and a slider, the slide rail is located in the installation groove and is arranged along the extending direction of the installation groove, and the slider is slidably disposed on the slide rail; The drive motor is disposed on the slider; When the slider moves on the slide rail, it will drive the drive motor and the baffle to rotate in the plane where the slide rail is located.

5. The flow equalizing plate according to claim 2, characterized in that, The bottom of the flow guiding channel has a flow guiding hole, and the diameter of the flow guiding hole gradually increases in the direction away from the receiving groove; The edge of the air hole has an annular limiting convex portion; When the driver drives the baffle to rotate, the limiting convex portion can contact the inner side wall of the flow guiding hole.

6. The flow equalizing plate according to claim 5, characterized in that, In the initial state, the included angle between the limiting convex portion and the flow guiding hole ranges from 20° to 30°.

7. The flow equalizing plate according to claim 5, characterized in that, The connection between the limiting convex portion and the edge of the air hole is subjected to a blunt treatment; and / or, both ends of the receiving groove are subjected to a blunt treatment.

8. The flow equalizing plate according to any one of claims 2 to 7, characterized in that It further includes a flow control member; The flow control member is disposed on the plate body and is used to control the flow rate of the process gas.

9. The flow equalizing plate according to claim 8, characterized in that, The flow control member includes a flow control plate and a rotating motor; The flow control plate is a hemispherical structure, and the diameter of the flow control plate is smaller than the diameter of the baffle, and a flow control hole is provided at the bottom of the flow control plate; The rotating motors are oppositely arranged on the inner side wall of the baffle, and the rotating shafts of the rotating motors all face the center of the receiving groove and are connected to the flow control plate.

10. A wafer etching device, characterized in that, It includes a process cavity and the flow equalizing plate according to any one of claims 1 to 9, the process cavity is used to hold a wafer, and the flow equalizing plate is used to control the flow direction of the process gas towards the wafer.

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