Switch integration module of energy storage converter and energy storage converter

Abstract

The invention discloses a switch integration module of an energy storage converter and the energy storage converter, the switch integration module comprises switch circuits of a plurality of function units and a plurality of substrates, the switch circuits of the plurality of function units comprise a power generation switch circuit, a charging switch circuit and a grid-connected switch circuit, the power generation switch circuit is used for connecting power generation equipment and a direct current bus, and the charging switch circuit is used for connecting the power generation equipment and the direct current bus. The charging switch circuit is used for connecting a direct current bus and energy storage equipment, the grid-connected switch circuit is used for connecting the direct current bus and an external power grid, and the switch circuits of the plurality of functional units are fixed on the plurality of substrates. The switching circuits of the plurality of functional units are fixed on the at least two substrates, the size of a single substrate is reduced, and the structural strength of the single substrate is enhanced, so that the risk of breakage during processing can be reduced, and the yield of the substrates is improved.

Description

Technical Field

[0001] The present disclosure relates to the technical field of new energy energy storage applications, and particularly to a switching integrated module and an energy storage converter for an energy storage converter. Background Art

[0002] A photovoltaic energy storage charging integrated system is an energy system integrating multiple functions such as photovoltaic power generation, energy storage, and inverter grid connection. Since the power consumption modes of each function are different, it often needs to perform current conversion through a PCS (Power Conversion System, energy storage converter). Specifically, a large number of electronic components such as IGBTs (Insulated Gate Bipolar Transistors) and diodes are often provided in the PCS, and the following functional units are formed by a large number of electronic components: a power generation unit for connecting to a DC bus and a photovoltaic power generation device, a charging unit for connecting to the DC bus and an energy storage device, and a grid connection unit for connecting to the DC bus and an external power grid to achieve current conversion between various devices. These electronic components are often dispersed inside the PCS, occupying a large amount of space, resulting in a large volume of the PCS.

[0003] In the related art, a switching integrated module is proposed. This switching integrated module integrates the switching circuits composed of IGBTs and diodes in the above-mentioned multiple functional units onto a single substrate to reduce the wiring required for IGBTs and diodes, thereby saving the space inside the PCS.

[0004] However, in the above structure, the size of a single substrate is large, and there is a risk of breakage during processing, and its yield is difficult to guarantee. Summary of the Invention

[0005] Embodiments of the present disclosure provide a switching integrated module and an energy storage converter for an energy storage converter, which can solve the above-mentioned technical problems existing in the related art. The technical solutions are as follows:

[0006] In a first aspect, a switching integrated module for an energy storage converter is provided. The switching integrated module includes switching circuits of multiple functional units and multiple substrates;

[0007] The switching circuits of the multiple functional units include a power generation switching circuit, a charging switching circuit, and a grid connection switching circuit. The power generation switching circuit is used to connect a power generation device and a DC bus, the charging switching circuit is used to connect the DC bus and an energy storage device, and the grid connection switching circuit is used to connect the DC bus and an external power grid. The switching circuits of the multiple functional units are fixed on the multiple substrates.

[0008] In a possible implementation, the power generation switch circuit is located on the first substrate among the multiple substrates, and includes two bridge arms. Both of the two bridge arms include a boost circuit and a bypass circuit connected in parallel with each other. The boost circuit includes a first IGBT, a first diode, and a second diode. The first IGBT is anti-parallel connected with the first diode, and the second diode and the first IGBT are connected in series with the first diode after being anti-parallel connected. The bypass circuit includes a third diode. Among them,

[0009] The third diodes and the second diodes in the two bridge arms are both fixed on the first conductive sheet of the first substrate. The first IGBT and the first diode of one of the two bridge arms are fixed on the second conductive sheet of the first substrate, and the first IGBT and the first diode of the other are fixed on the third conductive sheet of the first substrate.

[0010] In a possible implementation, the power generation switch circuit includes a first DC+ terminal and a first DC- terminal. The first DC+ terminal is fixed on the first conductive sheet and is used to be connected to the DC bus. The first DC- terminal is fixed on the sixth conductive sheet of the first substrate and is used to connect the DC bus and the two bridge arms.

[0011] In a possible implementation, the power generation switch circuit includes a first input terminal, a second input terminal, a third input terminal, and a fourth input terminal. The first input terminal is fixed on the second conductive sheet, the second input terminal is fixed on the third conductive sheet, the third input terminal is fixed on the fourth conductive sheet of the first substrate and is used to be connected to the gate of the first IGBT on one of the two bridge arms, and the fourth input terminal is fixed on the fifth conductive sheet of the first substrate and is used to be connected to the gate of the first IGBT on the other of the two bridge arms. Among them,

[0012] The second conductive sheet, the fourth conductive sheet, the third conductive sheet, and the fifth conductive sheet are arranged at intervals along the first direction, and are all located between the first conductive sheet and the sixth conductive sheet in the second direction. The first direction is the length direction of the multiple substrates, and the second direction is the width direction of the multiple substrates.

[0013] In a possible implementation, the charging switch circuit is located on the first substrate among the multiple substrates, and includes two bridge arms connected in parallel with each other, a second DC+ terminal, and a second DC- terminal;

[0014] Both of the two bridge arms include an upper half-bridge and a lower half-bridge. The upper half-bridges of the two bridge arms are both fixed to the seventh conductive sheet of the first substrate, and the lower half-bridge of one of them is fixed to the eighth conductive sheet of the first substrate, and the lower half-bridge of the other one is fixed to the ninth conductive sheet of the first substrate;

[0015] The second DC+ terminal is fixed to the seventh conductive sheet, and the second DC- terminal is fixed to the tenth conductive sheet of the first substrate and is used to connect the DC bus to the lower half-bridges of the two bridge arms.

[0016] In a possible implementation manner, the charging switch circuit includes two bridge arms connected in parallel;

[0017] The upper half-bridge of one of the two bridge arms includes at least two first switch components connected in parallel, and the lower half-bridge includes at least two second switch components connected in parallel. The first switch component includes a second IGBT and a fourth diode connected in anti-parallel, and the second switch component includes a third IGBT and a fifth diode connected in anti-parallel;

[0018] The upper half-bridge of the other bridge arm of the two bridge arms includes at least two third switch components connected in parallel, and the lower half-bridge includes at least two fourth switch components connected in parallel. The third switch component includes a fourth IGBT and a sixth diode connected in anti-parallel, and the fourth switch component includes a fifth IGBT and a seventh diode connected in anti-parallel.

[0019] In a possible implementation manner, the eighth conductive sheet has a first part and a second part connected to each other. The first part and the second part are arranged along the second direction and form an avoidance notch. The seventh conductive sheet is located on one side of the first part away from the second part. The ninth conductive sheet and the tenth conductive sheet are located in the avoidance notch. The ninth conductive sheet, the tenth conductive sheet and the second part are arranged at intervals along the first direction. The first direction is the length direction of the multiple substrates, and the second direction is the width direction of the multiple substrates.

[0020] In a possible implementation manner, the grid-connected switch circuit is located on the second substrate among the multiple substrates and includes an inverter switch circuit and an active filter switch circuit connected in parallel. The inverter switch circuit includes two bridge arms. Both of the two bridge arms include an upper half-bridge and a lower half-bridge. The upper half-bridges of the two bridge arms are both fixed to the eleventh conductive sheet on the second substrate, and the lower half-bridge of one of them is fixed to the twelfth conductive sheet on the second substrate, and the lower half-bridge of the other one is fixed to the thirteenth conductive sheet on the second substrate.

[0021] In a possible implementation manner, the grid-connected switch circuit includes a third DC+ terminal and a third DC- terminal. The third DC+ terminal is fixed to the eleventh conductive sheet and is used to connect to the DC bus. The third DC- terminal is fixed to the fourteenth conductive sheet and is used to connect to the lower half-bridges of the two bridge arms of the inverter switch circuit.

[0022] In a possible implementation manner, the active filter switch circuit includes an upper half-bridge and a lower half-bridge. The upper half-bridge is fixed to the eleventh conductive sheet, and the lower half-bridge is fixed to the fifteenth conductive sheet on the second substrate.

[0023] In a possible implementation manner, the eleventh conductive sheet has a connected third part and a fourth part. The third part and the fourth part are arranged along the second direction. The upper half-bridges of the two bridge arms are both located in the third part, and the upper half-bridge is located in the fourth part. The fourth part and the fifteenth conductive sheet are arranged at intervals along the first direction. The eleventh conductive sheet, the twelfth conductive sheet, the thirteenth conductive sheet, and the fourteenth conductive sheet are arranged at intervals along the second direction. The first direction is the length direction of the multiple substrates, and the second direction is the width direction of the multiple substrates.

[0024] In a second aspect, a energy storage inverter is provided, and the energy storage inverter includes the switch integration module described in the first aspect.

[0025] The beneficial effects brought by the technical solution provided by the present disclosure at least include:

[0026] Compared with the related art, the switch circuits of multiple functional units are fixed on at least two substrates, reducing the size of a single substrate and strengthening the structural strength of a single substrate. Therefore, the risk of breakage during processing can be reduced, and the yield rate of the substrate can be improved.

[0027] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0029] Figure 1 is a schematic structural diagram of a switch integration module provided by an embodiment of the present disclosure;

[0030] Figure 2 It is a schematic structural diagram of a first substrate and related electronic components in a switch integration module provided by an embodiment of the present disclosure;

[0031] Figure 3 It is a circuit topology diagram of electronic components on a first substrate in a switch integration module provided by an embodiment of the present disclosure;

[0032] Figure 4 It is a schematic structural diagram of a second substrate and related electronic components in a switch integration module provided by an embodiment of the present disclosure;

[0033] Figure 5 It is a circuit topology diagram of electronic components on a second substrate in a switch integration module provided by an embodiment of the present disclosure.

[0034] Reference numerals:

[0035] 1. Switch circuit;

[0036] 11. Power generation switch circuit; 11a. First IGBT; 11b. First diode; 11c. Second diode; 11d. Third diode; 11e. First input terminal; 11f. Second input terminal; 11g. Third input terminal; 11h. Fourth input terminal; 11i. First DC+ terminal; 11j. First DC- terminal; 11k. Thermistor; 11l. Bypass terminal;

[0037] 12. Charging switch circuit; 12a. Second DC+ terminal; 12b. Second DC- terminal; 12c. Second IGBT; 12d. Fourth diode; 12e. Third IGBT; 12f. Fifth diode; 12g. Fourth IGBT; 12h. Sixth diode; 12i. Fifth IGBT; 12j. Seventh diode;

[0038] 13. Grid connection switch circuit; 13a. Third DC+ terminal; 13b. Third DC- terminal; 13c. Fourth DC- terminal;

[0039] 131. Inverter switch circuit; 131a. Sixth IGBT; 131b. Eighth diode; 131c. Seventh IGBT; 131d. Ninth diode; 131e. Eighth IGBT; 131f. Tenth diode; 131g. Ninth IGBT; 131h. Eleventh diode; 131i. Twelfth IGBT; 131j. Fourteenth diode; 131k. Thirteenth IGBT; 131l. Fifteenth diode; 131m. Intermediate output terminal;

[0040] 132. Active filter switch circuit; 132a. Tenth IGBT; 132b. Twelfth diode; 132c. Eleventh IGBT; 132d. Thirteenth diode;

[0041] 2. Substrate; 2a. First substrate; 2b. Second substrate;

[0042] 21. Insulating layer;

[0043] 22. Conductive sheet; 22a. First conductive sheet; 22b. Second conductive sheet; 22c. Third conductive sheet; 22d. Fourth conductive sheet; 22e. Fifth conductive sheet; 22f. Sixth conductive sheet; 22g. Seventh conductive sheet; 22h. Eighth conductive sheet; 22i. Ninth conductive sheet; 22j. Tenth conductive sheet; 22k. Eleventh conductive sheet; 22l. Twelfth conductive sheet; 22m. Thirteenth conductive sheet; 22n. Fourteenth conductive sheet; 22o. Fifteenth conductive sheet; 22p. Sixteenth conductive sheet; 22q. Seventeenth conductive sheet; 22r. Eighteenth conductive sheet; 22s. Nineteenth conductive sheet; 22t. Twentieth conductive sheet; 22u. Twenty - first conductive sheet; 22v. Twenty - second conductive sheet; 22w. Twenty - third conductive sheet; 22x. Twenty - fourth conductive sheet; 22y. Twenty - fifth conductive sheet; 22z. Twenty - sixth conductive sheet; 220a. Twenty - seventh conductive sheet; 220b. Twenty - eighth conductive sheet; 220c. Twenty - ninth conductive sheet;

[0044] 23. First region; 24. Second region; 25. Third region; 26. Fourth region. Detailed implementation mode

[0045] To make the purpose, technical solution and advantages of the present disclosure clearer, the following will further describe the embodiments of the present application in detail with reference to the accompanying drawings.

[0046] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The following will describe the present application in detail with reference to the drawings and in combination with the embodiments.

[0047] The embodiment of the present disclosure provides a switch integration module of an energy storage converter. Referring to Figure 1 , the switch integration module includes a switch circuit 1 of multiple functional units and multiple substrates 2. The switch circuit 1 of multiple functional units includes a power generation switch circuit 11, a charging switch circuit 12 and 13. The power generation switch circuit 11 is used to connect a power generation device and a DC bus. The charging switch circuit 12 is used to connect the DC bus and an energy storage device. The grid - connection switch circuit 13 is used to connect the DC bus and an external power grid. The switch circuit 1 of multiple functional units is fixed on multiple substrates 2.

[0048] In this way, the switching circuits 1 of multiple functional units are fixed on at least two substrates 2, reducing the size of a single substrate 2 and strengthening the structural strength of the single substrate 2. As a result, the risk of breakage during processing can be reduced, and the yield rate of the substrate 2 can be improved. Moreover, by fixing the switching circuits 1 of multiple functional units on at least two substrates 2, the electronic components on the switching integration module can be dispersed while ensuring the integration density, so as to reduce the heat dissipation pressure of the switching integration module. In addition, fixing the switching circuits 1 of multiple functional units on at least two substrates 2 also facilitates the connection of the substrate 2 to other structures, improving the convenience of connection.

[0049] The substrate 2 includes an insulating layer 21 and a plurality of conductive sheets 22 connected to each other. The plurality of conductive sheets 22 are fixedly spaced on the insulating layer 21, and there are welding layers on the plurality of conductive sheets 22. Each electronic component on the switching circuits 1 of the multiple functional units is welded to the conductive sheet 22, and one interface of the electronic component welded to the conductive sheet 22 is in communication with the conductive sheet 22. At this time, the conductive sheet 22 can act as a wire, and the other interface of the electronic component on one of the conductive sheets 22 can be electrically connected to other conductive sheets 22 or electronic components through leads.

[0050] Optionally, the substrate 2 can be a DBC (Direct Bond Copper) ceramic substrate 2, that is, the insulating layer 21 can be a ceramic sheet and the conductive sheet 22 can be a copper foil to improve the heat dissipation ability of the substrate 2.

[0051] In some embodiments, the power generation switching circuit 11 and the charging switching circuit 12 can be integrated onto the same substrate 2. The power generation unit and the charging unit often work simultaneously, and in some cases, only power generation and charging may be required. Setting the switching circuits of the two on the same substrate 2 can also be used as a separate module.

[0052] In one implementation manner of the embodiments of the present disclosure, please refer to Figure 2 and Figure 3, the power generation switch circuit 11 is located on the first substrate 2a among the plurality of substrates 2, and includes two bridge arms. Both bridge arms include a boost circuit and a bypass circuit connected in parallel. The boost circuit includes a first IGBT 11a, a first diode 11b, and a second diode 11c. The first IGBT 11a is anti-parallel connected with the first diode 11b. After the second diode 11c and the first IGBT 11a are anti-parallel connected, they are connected in series with the first diode 11b. The bypass circuit includes a third diode 11d. Among them, the third diode 11d and the second diode 11c in both bridge arms are fixed on the first conductive sheet 22a of the first substrate 2a. The first IGBT 11a and the first diode 11b of one of the two bridge arms are fixed on the second conductive sheet 22b of the first substrate 2a, and the first IGBT 11a and the first diode 11b of the other are fixed on the third conductive sheet 22c of the first substrate 2a.

[0053] Specifically, the power generation switch circuit 11 includes a first bridge arm and a second bridge arm. Both the first bridge arm and the second bridge arm include a boost circuit and a bypass circuit. The third diode 11d and the second diode 11c in the first bridge arm and the second bridge arm are both arranged on the first conductive sheet 22a. The first IGBT 11a and the first diode 11b in the first bridge arm are arranged on the second conductive sheet 22b. The first IGBT 11a and the first diode 11b in the second bridge arm are arranged on the third conductive sheet 22c. The IGBT on the first IGBT 11a in the first bridge arm is connected to the first conductive sheet 22a through a wire to realize the connection of the circuit. In addition, by anti-parallel connecting the first IGBT 11a and the first diode 11b, it can prevent the first IGBT 11a from being damaged due to sudden changes in current when it is switched on and off.

[0054] Specifically, as Figure 2 shown, one interface of the second diode 11c of the first bridge arm is connected to the second conductive sheet 22b through a wire, and the other interface of the second diode 11c of the first bridge arm is connected to the first conductive sheet 22a, thereby realizing the conduction of current between the second conductive sheet 22b and the first conductive sheet 22a.

[0055] In this way, the third diode 11d and the second diode 11c in both bridge arms are both arranged on the first conductive sheet 22a, which can reduce the number of conductive sheets 22 they need to occupy, thereby reducing the area of the substrate 2 they occupy, and further reducing the size of the switch integrated module.

[0056] In an implementation manner of the embodiment of the present disclosure, please refer to Figure 2 and Figure 3, the power generation switch circuit 11 includes a first DC+ terminal 11i and a first DC- terminal 11j. The first DC+ terminal 11i is fixed to the first conductive sheet 22a and is used to connect to the DC bus. The first DC- terminal 11j is fixed to the sixth conductive sheet 22f of the first substrate 2a and is used to connect the DC bus and the two bridge arms.

[0057] In this way, since the first bridge arm and the second bridge arm are in parallel, and both the first bridge arm and the second bridge arm are connected to the power generation device and the DC bus, the first DC+ terminal 11i and the first DC- terminal 11j are shared by the two, which can reduce the number of terminals required when the first bridge arm and the second bridge arm are connected to the DC bus. Thus, the number of conductive sheets 22 occupied by the first DC+ terminal 11i and the first DC- terminal 11j can be reduced, and the size of the switch integration module can be reduced. Moreover, by arranging the first DC+ terminal 11i on the first conductive sheet 22a, the area of the first conductive sheet 22a can be maximally utilized, thereby further reducing the size of the switch integration module.

[0058] In an implementation manner of the embodiment of the present disclosure, please refer to Figure 2 and Figure 3 , the power generation switch circuit 11 includes a first input terminal 11e, a second input terminal 11f, a third input terminal 11g, and a fourth input terminal 11h. The first input terminal 11e is fixed to the second conductive sheet 22b, the second input terminal 11f is fixed to the third conductive sheet 22c, the third input terminal 11g is fixed to the fourth conductive sheet 22d of the first substrate 2a and is used to connect to the gate of the first IGBT 11a on one of the two bridge arms, and the fourth input terminal 11h is fixed to the fifth conductive sheet 22e of the first substrate 2a and is used to connect to the gate of the first IGBT 11a on the other of the two bridge arms. The second conductive sheet 22b, the fourth conductive sheet 22d, the third conductive sheet 22c, and the fifth conductive sheet 22e are arranged at intervals along the first direction, and in the second direction, they are all located between the first conductive sheet 22a and the sixth conductive sheet 22f. The first direction is the length direction of the plurality of substrates 2, and the second direction is the width direction of the plurality of substrates 2.

[0059] In this way, the first input terminal 11e, the first IGBT 11a, and the first diode 11b of the first bridge arm are fixed on the same conductive sheet 22, and the second input terminal 11f, the first IGBT 11a, and the first diode 11b of the second bridge arm are fixed on the same conductive sheet 22, thereby improving the integration degree of the switch integration module. Moreover, the second conductive sheet 22b, the fourth conductive sheet 22d, the third conductive sheet 22c, and the fifth conductive sheet 22e are arranged at intervals along the first direction and are all located between the first conductive sheet 22a and the sixth conductive sheet 22f in the second direction, which is convenient for wiring.

[0060] In some embodiments, a thermistor 11k is further provided on the first substrate 2a. One end of the thermistor 11k is fixed on the sixteenth conductive sheet 22p, and the other end is fixed on the seventeenth conductive sheet 22q. The sixteenth conductive sheet 22p and the seventeenth conductive sheet 22q are located on the sides of the third conductive sheet 22c and the first conductive sheet 22a, and the temperature at this position is relatively high during use. By detecting this position through the thermistor 11k, the temperature information of this position can be obtained in a timely manner to prevent overheating at this position.

[0061] In some embodiments, the bypass circuit further includes a bypass terminal 11l. The bypass terminal 11l of the first bridge arm is located on the eighteenth conductive sheet 22r, and the bypass terminal 11l of the second bridge arm is located on the nineteenth conductive sheet 22s. The first conductive sheet 22a has a protruding portion and a body portion. The protruding portion is located on the side of the body portion away from the second conductive sheet 22b in the width direction of the substrate 2. At least one first DC+ terminal 11i is located on the protruding portion. The eighteenth conductive sheet 22r and the nineteenth conductive sheet 22s are located on both sides of the protruding portion, and the bypass terminals 11l of the first bridge arm and the second bridge arm are on the same straight line as at least one first DC+ terminal 11i.

[0062] In one implementation manner of the embodiments of the present disclosure, please refer to Figure 2 and Figure 3 , the charging switch circuit 12 is located on the first substrate 2a among the plurality of substrates 2, and includes two bridge arms connected in parallel with each other, a second DC+ terminal 12a, and a second DC- terminal 12b. Both bridge arms include an upper half bridge and a lower half bridge. The upper half bridges of both bridge arms are fixed on the seventh conductive sheet 22g of the first substrate 2a. The lower half bridge of one of them is fixed on the eighth conductive sheet 22h of the first substrate 2a, and the lower half bridge of the other is fixed on the ninth conductive sheet 22i of the first substrate 2a. The second DC+ terminal 12a is fixed on the seventh conductive sheet 22g, and the second DC- terminal 12b is fixed on the tenth conductive sheet 22j of the first substrate 2a and is used to connect the DC bus to the lower half bridges of the two bridge arms.

[0063] In this way, the upper half bridges of the two bridge arms have similar functions and are directly connected in parallel in the circuit topology. By arranging them on the seventh conductive sheet 22g, the space on the first substrate 2a can be further optimized to reduce the area of the first substrate 2a and the size of the first substrate 2a. In addition, the second DC+ terminal 12a is also arranged on the seventh conductive sheet 22g, and the lower half bridges of the two bridge arms share the second DC- terminal 12b, so that the size of the first substrate 2a can also be further reduced.

[0064] Specifically, the charging switch circuit 12 includes a third arm and a fourth arm. The third arm and the fourth arm are connected to the DC bus through the second DC+ terminal 12a and the second DC- terminal 12b to charge the energy storage device through the DC bus. In this way, the power generation device is connected to the DC bus, so that the electric energy generated by the power generation device can be transmitted to the energy storage device through the DC bus. In addition, the external power grid is connected to the DC bus, so that the electric energy of the external power grid can also be transmitted to the energy storage device through the DC bus.

[0065] In an implementation manner of the embodiment of the present disclosure, the charging switch circuit 12 includes two arms connected in parallel. The upper half-bridge of one of the two arms includes at least two first switch components connected in parallel, and the lower half-bridge includes at least two second switch components connected in parallel. The first switch component includes a second IGBT 12c and a fourth diode 12d connected in anti-parallel. The second switch component includes a third IGBT 12e and a fifth diode 12f connected in anti-parallel. The upper half-bridge of the other of the two arms includes at least two third switch components connected in parallel, and the lower half-bridge includes at least two fourth switch components connected in parallel. The third switch component includes a fourth IGBT 12g and a sixth diode 12h connected in anti-parallel. The fourth switch component includes a fifth IGBT 12i and a seventh diode 12j connected in anti-parallel.

[0066] In this way, compared with the solution in the related art where only a set of switch components is used for the upper half-bridge and the lower half-bridge of a single arm, multiple switch components are provided on both the upper half-bridge and the lower half-bridge of these two arms. The multiple switch components can share the current in the upper half-bridge and the lower half-bridge of a single arm, so as to prevent the current in a single switch component from being too large, and thus prevent the second IGBT 12c, the third IGBT 12e, the fourth IGBT 12g or the fifth IGBT 12i from overheating or overloading.

[0067] Specifically, the upper half-bridge of the third bridge arm includes at least two first switch components connected in parallel. The first switch component includes a second IGBT 12c and a fourth diode 12d connected in antiparallel. The lower half-bridge of the third bridge arm includes at least two second switch components connected in parallel. The second switch component includes a third IGBT 12e and a fifth diode 12f connected in antiparallel. The upper half-bridge of the fourth bridge arm includes at least two third switch components connected in parallel. The third switch component includes a fourth IGBT 12g and a sixth diode 12h connected in antiparallel. The lower half-bridge of the fourth bridge arm includes at least two third switch components connected in parallel. The third switch component includes a fifth IGBT 12i and a seventh diode 12j connected in antiparallel. The second IGBT 12c, the fourth diode 12d, the fourth IGBT 12g, the sixth diode 12h, and the second DC+ terminal 12a are disposed on the seventh conductive sheet 22g. The third IGBT 12e and the fifth diode 12f are disposed on the eighth conductive sheet 22h. The fifth IGBT 12i and the seventh diode 12j are disposed on the ninth conductive sheet 22i. The second DC− terminal 12b is disposed on the tenth conductive sheet 22j.

[0068] In an implementation manner of the embodiment of the present disclosure, please refer to Figure 2 and Figure 3 , the eighth conductive sheet 22h has a first part and a second part connected to each other. The first part and the second part are arranged along the second direction and form an avoidance notch. The seventh conductive sheet 22g is located on a side of the first part away from the second part. The ninth conductive sheet 22i and the tenth conductive sheet 22j are located in the avoidance notch. The ninth conductive sheet 22i, the tenth conductive sheet 22j, and the second part are arranged at intervals along the first direction. The first direction is the length direction of the plurality of substrates 2, and the second direction is the width direction of the plurality of substrates 2.

[0069] In this way, it is possible to facilitate the arrangement of the respective conductive sheets 22 on the first substrate 2a, optimize the layout on the first substrate 2a, reduce the area of the first substrate 2a, and reduce the size of the switch integration module.

[0070] In some embodiments, the third IGBT 12e and the fifth diode 12f are located in the second part. A wiring terminal is fixed to the first part, and the wiring terminal is located at a position close to the edge of the first substrate 2a. The tenth conductive sheet 22j has a fifth part and a sixth part. The fifth part and the sixth part are arranged along the second direction. The seventh diode and the fifth IGBT 12i are located in the sixth part. A wiring terminal is fixed to the fifth part, and the wiring terminal is located at a position close to the edge of the first substrate 2a.

[0071] In some embodiments, a twenty - first conductive sheet 22u, a twenty - second conductive sheet 22v, a twenty - third conductive sheet 22w, and a twenty - fourth conductive sheet 22x are further fixed on the first substrate 2a. Wiring terminals are provided on all of these four conductive sheets. The twenty - first conductive sheet 22u, the twenty - second conductive sheet 22v, the twenty - third conductive sheet 22w, and the twenty - fourth conductive sheet 22x are all located on the side of the seventh conductive sheet 22g away from the eighth conductive sheet 22h. Moreover, the twenty - second conductive sheet 22v and the twenty - fourth conductive sheet 22x are located near the edge of the first substrate 2a. The twenty - first conductive sheet 22u and the twenty - third conductive sheet 22w are arranged at intervals along the first direction, and the straight lines where the wiring terminals on the twenty - first conductive sheet 22u and the twenty - third conductive sheet 22w are located extend along the first direction. The twenty - second conductive sheet 22v and the twenty - fourth conductive sheet 22x are arranged at intervals along the first direction, and the straight lines where the wiring terminals on the twenty - second conductive sheet 22v and the twenty - fourth conductive sheet 22x are located extend along the first direction. The twenty - first conductive sheet 22u and the twenty - second conductive sheet 22v are arranged at intervals along the second direction, and the straight lines where the wiring terminals on the twenty - first conductive sheet 22u and the twenty - second conductive sheet 22v are located extend along the second direction. The twenty - third conductive sheet 22w and the twenty - fourth conductive sheet 22x are arranged at intervals along the second direction, and the straight lines where the wiring terminals on the twenty - third conductive sheet 22w and the twenty - fourth conductive sheet 22x are located extend along the second direction.

[0072] Among them, the gate of the fourth IGBT is connected to the twenty - first conductive sheet 22u through a wire, and the gate of the second IGBT is connected to the twenty - third conductive sheet 22w through a wire to control the fourth IGBT and the second IGBT. The conductive end of the fourth IGBT is connected to the twenty - second conductive sheet 22v through a wire, and the conductive end of the second IGBT is connected to the twenty - fourth conductive sheet 22x through a wire to be connected to other electronic components through the wiring terminals of the twenty - first conductive sheet 22u and the twenty - fourth conductive sheet 22x. Since the twenty - second conductive sheet 22v and the twenty - fourth conductive sheet 22x are located near the edge of the first substrate 2a, it is convenient to connect the twenty - first conductive sheet 22u to other electronic components.

[0073] In some embodiments, a twenty-fifth conductive sheet 22y, a twenty-sixth conductive sheet 22z, a twenty-seventh conductive sheet 220a, and a twenty-eighth conductive sheet 220b are also fixed on the first substrate 2a. Wiring terminals are provided on all four of these conductive sheets. The twenty-fifth conductive sheet 22y and the twenty-sixth conductive sheet 22z are located on the side of the sixth part of the ninth conductive sheet 22i away from the tenth conductive sheet 22j, and the twenty-fifth conductive sheet 22y and the twenty-sixth conductive sheet 22z are arranged at intervals along the first direction. The twenty-seventh conductive sheet 220a and the twenty-eighth conductive sheet 220b are located on the side of the second part away from the tenth conductive sheet 22j, and the twenty-seventh conductive sheet 220a and the twenty-eighth conductive sheet 220b are arranged at intervals along the first direction. The wiring terminals on the twenty-fifth conductive sheet 22y, the twenty-sixth conductive sheet 22z, the twenty-seventh conductive sheet 220a, and the twenty-eighth conductive sheet 220b are on the same straight line, and this straight line extends along the first direction.

[0074] Among them, the gate of the fifth IGBT 12i is connected to the twenty-fifth conductive sheet 22y through a wire, and the gate of the third IGBT 12e is connected to the twenty-seventh conductive sheet 220a through a wire to control the fifth IGBT 12i and the third IGBT 12e. The conductive end of the fifth IGBT 12i is connected to the twenty-sixth conductive sheet 22z through a wire, and the conductive end of the third IGBT 12e is connected to the twenty-eighth conductive sheet 220b through a wire to be connected to other electronic components through the wiring terminals on the twenty-sixth conductive sheet 22z and the twenty-eighth conductive sheet 220b.

[0075] In some embodiments, the second DC+ terminal 12a and the second DC- terminal 12b are on the same straight line. On the one hand, it is convenient to connect electronic components such as bus capacitors between the two terminals. On the other hand, it can make the main power circuits of the third bridge arm and the fourth bridge arm symmetric with each other, thereby reducing the difference between the two.

[0076] The charging switch circuit 12 includes two output terminals, and these two output terminals are used to connect to a device. Optionally, one of the output terminals is arranged on the eighth conductive sheet 22h, and the other output terminal is arranged on the ninth conductive sheet 22i, so as to further reduce the number of conductive sheets 22 occupied by the output terminals and reduce the difficulty of manufacturing the substrate 2. Optionally, both of these output terminals are arranged at positions close to the edge of the first substrate 2a, so as to facilitate wiring with other electronic components.

[0077] In some embodiments, as Figure 1 shown, the first substrate 2a includes a first region 23 and a second region 24. The first region 23 and the second region 24 are arranged along the length direction of the first substrate 2a, and the two are electrically isolated. The power generation switch circuit 11 is located in the first region 23, and the charging switch circuit 12 is located in the second region 24.

[0078] In one implementation of the embodiments of the present disclosure, please refer to Figure 4 and Figure 5 , the grid-connected switch circuit 13 is located on the second substrate 2b among the plurality of substrates 2, and includes an inverter switch circuit 131 and an active filter switch circuit 132 connected in parallel with each other. The inverter switch circuit 131 includes two bridge arms, and both bridge arms include an upper half-bridge and a lower half-bridge. The upper half-bridges of the two bridge arms are both fixed on the eleventh conductive sheet 22k on the second substrate 2b, and the lower half-bridge of one of them is fixed on the twelfth conductive sheet 22l on the second substrate 2b, and the lower half-bridge of the other is fixed on the thirteenth conductive sheet 22m on the second substrate 2b.

[0079] In this way, the upper half-bridges of the two bridge arms of the inverter switch circuit 131 have similar functions and are directly connected in parallel in the circuit topology. Setting them on the eleventh conductive sheet 22k can further optimize the space on the second substrate 2b, so as to reduce the area of the second substrate 2b and reduce the size of the switch integration module.

[0080] Specifically, the inverter switch circuit 131 includes a fifth bridge arm and a sixth bridge arm. The upper half-bridge of the fifth bridge arm includes an anti-parallel sixth IGBT 131a and an eighth diode 131b. The lower half-bridge of the fifth bridge arm includes an anti-parallel seventh IGBT 131c and a ninth diode 131d. The upper half-bridge of the sixth bridge arm includes an anti-parallel eighth IGBT 131e and a tenth diode 131f. The lower half-bridge of the sixth bridge arm includes an anti-parallel ninth IGBT 131g and an eleventh diode 131h. The sixth IGBT 131a, the eighth diode 131b, the eighth IGBT 131e, and the tenth diode 131f are arranged on the eleventh conductive sheet 22k. The seventh IGBT 131c and the ninth diode 131d are arranged on the twelfth conductive sheet 22l. The ninth IGBT 131g and the eleventh diode 131h are arranged on the thirteenth conductive sheet 22m.

[0081] In one implementation of the embodiments of the present disclosure, the grid-connected switch circuit 13 includes a third DC+ terminal 13a and a third DC- terminal 13b. The third DC+ terminal 13a is fixed on the eleventh conductive sheet 22k and is used to be connected to the DC bus. The third DC- terminal 13b is fixed on the fourteenth conductive sheet 22n and is used to be connected to the lower half-bridges of the two bridge arms of the inverter switch circuit 131.

[0082] In this way, setting the third DC+ terminal 13a on the eleventh conductive sheet 22k can reduce the number of conductive sheets 22 occupied by the third DC+ terminal 13a, thereby reducing the size of the second substrate 2b. Moreover, the two bridge arms of the inverter switch circuit 131 share the third DC- terminal 13b, which can further reduce the size of the second substrate 2b, and thus can reduce the size of the switch integration module.

[0083] Specifically, the fifth bridge arm and the sixth bridge arm are connected to the DC bus through the third DC+ terminal 13a and the third DC- terminal 13b. In this way, the electric energy generated by the power generation equipment can be transmitted to the external power grid, and the electric energy of the external power grid can be transmitted to the energy storage equipment through the DC bus.

[0084] In an implementation manner of the embodiment of the present disclosure, the active filter switching circuit 132 includes an upper half-bridge and a lower half-bridge. An upper half-bridge is fixed to the eleventh conductive sheet 22k, and a lower half-bridge is fixed to the fifteenth conductive sheet 22o on the second substrate 2b.

[0085] The active filter switching circuit 132 includes a seventh bridge arm. The upper half-bridge of the seventh bridge arm, the upper half-bridges of the fifth bridge arm and the sixth bridge arm in the inverter switching circuit 131, and the third DC+ terminal 13a are all arranged on the eleventh conductive sheet 22k. In this way, the structure on the second substrate 2b can be made more compact, further optimizing the space on the second substrate 2b to reduce the size of the second substrate 2b. Moreover, the active filter switching circuit 132 is next to the inverter switching circuit 131, and it is easier to absorb the double-frequency ripple in the inverter switching circuit 131, improving the filtering effect.

[0086] Specifically, the upper half-bridge of the seventh bridge arm includes an anti-parallel tenth IGBT 132a and a twelfth diode 132b, and the lower half-bridge of the seventh bridge arm includes an anti-parallel eleventh IGBT 132c and a thirteenth diode 132d.

[0087] In an implementation manner of the embodiment of the present disclosure, the eleventh conductive sheet 22k has a connected third part and a fourth part. The third part and the fourth part are arranged along the second direction. The upper half-bridges of the fifth bridge arm and the sixth bridge arm are both located in the third part, and the upper half-bridge of the seventh bridge arm is located in the fourth part. The fourth part and the fifteenth conductive sheet 22o are spaced apart along the first direction. The eleventh conductive sheet 22k, the twelfth conductive sheet 22l, the thirteenth conductive sheet 22m, and the fourteenth conductive sheet 22n are spaced apart along the second direction. The first direction is the length direction of the plurality of substrates 2, and the second direction is the width direction of the plurality of substrates 2.

[0088] In this way, the layout between the respective conductive sheets 22 on the second substrate 2b is optimized to facilitate the wiring on the second substrate 2b.

[0089] In some embodiments, the grid-connected switching circuit 13 further includes a fourth DC- terminal 13c. The fourth DC- terminal 13c is located on the twenty-ninth conductive sheet 220c and is respectively connected to the lower half-bridge of the seventh bridge arm and the DC bus. Among them, the twenty-ninth conductive sheet 220c is located on the side of the fifteenth conductive sheet 22o away from the fourth part, and the fourth DC- terminal 13c is located at a position close to the edge of the second substrate 2b.

[0090] In some embodiments, the inverter switch circuit 131 further includes a ninth bridge arm and a tenth bridge arm. The ninth bridge arm includes an anti-parallel twelfth IGBT 131i and fourteenth diode 131j, and the tenth bridge arm includes an anti-parallel thirteenth IGBT 131k and fifteenth diode 131l. The twelfth IGBT 131i and fourteenth diode 131j are fixed on a twelfth conductive sheet 22l, and the thirteenth IGBT 131k and fifteenth diode 131l are fixed on a thirteenth conductive sheet 22m. The inverter switch circuit 131 further includes an intermediate output terminal 131m, which is located on a twentieth conductive sheet 22t, and at least a part of the twentieth conductive sheet 22t is located between a part of the twelfth conductive sheet 22l and a part of the thirteenth conductive sheet 22m. In this way, the layout of the inverter switch circuit 131 can be optimized to reduce the parasitic inductance in the inverter switch circuit and improve the switching performance of the module.

[0091] In some embodiments, as Figure 1 shown, the second substrate 2b includes a third region 25 and a fourth region 26, which are arranged along the width direction of the second substrate 2b. The inverter switch circuit 131 is located in the third region 25, and the active filter switch circuit 132 is located in the fourth region 26.

[0092] Based on the same concept, an embodiment of the present disclosure further provides an energy storage converter, which includes the above-mentioned switch integration module. This energy storage converter can be used in an integrated photovoltaic energy storage charging system.

[0093] In this way, the energy storage converter includes the above-mentioned switch integration module, which can greatly improve the convenience of installing internal electronic components of the energy storage converter, and can also reduce the size of the energy storage converter, thereby reducing the space it needs to occupy. In addition, in the above-mentioned switch integration module, the switch circuits 1 of multiple functional units are fixed on at least two substrates 2, reducing the size of a single substrate 2 and strengthening the structural strength of a single substrate 2, so as to reduce the risk of fracture during processing, improve the yield rate of the substrate 2, and thus reduce the cost of producing the switch integration module, and further reduce the cost of the substrate 2.

[0094] Furthermore, the energy storage converter further includes some other electronic components such as capacitors. These electronic components can be connected to the respective terminals on the switch integration module through wires or other means to control the on / off of each electronic component through the switch integration module, so as to facilitate the control of the working mode of the energy storage converter.

[0095] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular forms are also intended to include the plural forms. In addition, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they specify the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0096] Unless otherwise specifically stated, the relative arrangements of components and steps, numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for the sake of convenience of description, the dimensions of the various parts shown in the drawings are not drawn in actual proportional relationships. Technologies, methods, and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such technologies, methods, and devices should be regarded as part of the specification. In all the examples shown and discussed herein, any specific value should be construed as merely exemplary and not as a limitation. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that like reference numerals and letters denote like items in the following drawings, and thus, once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0097] In the description of the present application, it should be understood that the orientation or positional relationships indicated by orientation words such as "front, rear, upper, lower, left, right", "lateral, vertical, perpendicular, horizontal", and "top, bottom" are generally based on the orientation or positional relationships shown in the drawings. These are only for the convenience of describing the present application and simplifying the description. Without contrary description, these orientation words do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the protection scope of the present application; the orientation words "inside, outside" refer to the inside and outside relative to the contour of each component itself.

[0098] For ease of description, spatial relative terms such as "above", "over", "on the upper surface", "upper" etc. may be used herein to describe the spatial positional relationship of one device or feature to other devices or features as shown in the figures. It should be understood that the spatial relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is inverted, a device described as "above" or "over" other devices or structures will then be positioned "below" or "under" the other devices or structures. Thus, the exemplary term "above" can include both the orientations of "above" and "below". The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the corresponding explanations for the spatial relative descriptions used herein will be made accordingly.

[0099] In addition, it should be noted that the use of terms such as "first", "second" etc. to define components is only for the convenience of differentiating the corresponding components. Without additional statements, the above terms have no special meanings, and thus should not be construed as limiting the scope of protection of this application.

[0100] The above are only the preferred embodiments of this application and are not used to limit this application. For those skilled in the art, this application can have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of this application shall be included within the scope of protection of this application.

Claims

1. A switching integration module of an energy storage converter, characterized in that, The switch integration module includes a switching circuit (1) of multiple functional units and multiple substrates (2); The switching circuit (1) of the multiple functional units includes a power generation switching circuit (11), a charging switching circuit (12), and a grid connection switching circuit (13). The power generation switching circuit (11) is used to connect a power generation device and a DC bus. The charging switching circuit (12) is used to connect the DC bus and an energy storage device. The grid connection switching circuit (13) is used to connect the DC bus and an external power grid. The switching circuit (1) of the multiple functional units is fixed on the multiple substrates (2).

2. The switch integration module according to claim 1, wherein The power generation switching circuit (11) is located on a first substrate (2a) among the multiple substrates (2), and includes two bridge arms. Both of the two bridge arms include a boost circuit and a bypass circuit connected in parallel. The boost circuit includes a first IGBT (11a), a first diode (11b), and a second diode (11c). The first IGBT (11a) is anti-parallel with the first diode (11b). The second diode (11c) and the first IGBT (11a) are connected in series with the first diode (11b) after being anti-parallel. The bypass circuit includes a third diode (11d); wherein The third diode (11d) and the second diode (11c) in the two bridge arms are both fixed on a first conductive sheet (22a) of the first substrate (2a). The first IGBT (11a) and the first diode (11b) of one of the two bridge arms are fixed on a second conductive sheet (22b) of the first substrate (2a), and the first IGBT (11a) and the first diode (11b) of the other are fixed on a third conductive sheet (22c) of the first substrate (2a).

3. The switch integration module according to claim 2, wherein The power generation switching circuit (11) includes a first DC+ terminal (11i) and a first DC- terminal (11j). The first DC+ terminal (11i) is fixed on the first conductive sheet (22a) and is used to connect to the DC bus. The first DC- terminal (11j) is fixed on a sixth conductive sheet (22f) of the first substrate (2a) and is used to connect the DC bus and the two bridge arms.

4. The switch integration module according to claim 3, wherein The power generation switch circuit (11) includes a first input terminal (11e), a second input terminal (11f), a third input terminal (11g), and a fourth input terminal (11h). The first input terminal (11e) is fixed to the second conductive sheet (22b), the second input terminal (11f) is fixed to the third conductive sheet (22c), the third input terminal (11g) is fixed to the fourth conductive sheet (22d) of the first substrate (2a) and is used to connect to the gate of the first IGBT (11a) on one of the two bridge arms, and the fourth input terminal (11h) is fixed to the fifth conductive sheet (22e) of the first substrate (2a) and is used to connect to the gate of the first IGBT (11a) on the other of the two bridge arms; wherein, The second conductive sheet (22b), the fourth conductive sheet (22d), the third conductive sheet (22c), and the fifth conductive sheet (22e) are arranged at intervals along the first direction and are all located between the first conductive sheet (22a) and the sixth conductive sheet (22f) in the second direction. The first direction is the length direction of the plurality of substrates (2), and the second direction is the width direction of the plurality of substrates (2).

5. The switch integration module according to claim 1, wherein The charging switch circuit (12) is located on the first substrate (2a) of the plurality of substrates (2) and includes two bridge arms connected in parallel, a second DC+ terminal (12a), and a second DC- terminal (12b); Both of the two bridge arms include an upper half bridge and a lower half bridge. The upper half bridges of the two bridge arms are fixed to the seventh conductive sheet (22g) of the first substrate (2a), and the lower half bridge of one of them is fixed to the eighth conductive sheet (22h) of the first substrate (2a), and the lower half bridge of the other is fixed to the ninth conductive sheet (22i) of the first substrate (2a); The second DC+ terminal (12a) is fixed to the seventh conductive sheet (22g), and the second DC- terminal is fixed to the tenth conductive sheet (22j) of the first substrate (2a) and is used to connect the DC bus to the lower half bridges of the two bridge arms.

6. The switch integration module according to claim 1, wherein The charging switch circuit (12) includes two bridge arms connected in parallel; The upper half bridge of one of the two bridge arms includes at least two first switch components connected in parallel, and the lower half bridge includes at least two second switch components connected in parallel. The first switch component includes a second IGBT (12c) and a fourth diode (12d) connected in anti-parallel, and the second switch component includes a third IGBT (12e) and a fifth diode (12f) connected in anti-parallel; The upper half-bridge of the other bridge arm in the two bridge arms includes at least two third switch components connected in parallel, and the lower half-bridge includes at least two fourth switch components connected in parallel. The third switch component includes an anti-parallel fourth IGBT (12g) and a sixth diode (12h), and the fourth switch component includes an anti-parallel fifth IGBT (12i) and a seventh diode (12j).

7. The switch integration module according to claim 5, wherein The eighth conductive sheet (22h) has a first part and a second part connected to each other. The first part and the second part are arranged along the second direction and form an avoidance notch. The seventh conductive sheet (22g) is located on one side of the first part away from the second part. The ninth conductive sheet (22i) and the tenth conductive sheet (22j) are located in the avoidance notch. The ninth conductive sheet (22i), the tenth conductive sheet (22j) and the second part are arranged at intervals along the first direction. The first direction is the length direction of the plurality of substrates (2), and the second direction is the width direction of the plurality of substrates (2).

8. The switch integration module according to claim 1, wherein The grid-connected switch circuit (13) is located on the second substrate (2b) among the plurality of substrates (2), and includes an inverter switch circuit (131) and an active filter switch circuit (132) connected in parallel with each other. The inverter switch circuit (131) includes two bridge arms, and both of the two bridge arms include an upper half-bridge and a lower half-bridge. The upper half-bridges of the two bridge arms are both fixed on the eleventh conductive sheet (22k) on the second substrate (2b), and the lower half-bridge of one of them is fixed on the twelfth conductive sheet (22l) on the second substrate (2b), and the lower half-bridge of the other one is fixed on the thirteenth conductive sheet (22m) on the second substrate (2b).

9. The switch integration module according to claim 8, wherein The grid-connected switch circuit (13) includes a third DC+ terminal (13a) and a third DC- terminal (13b). The third DC+ terminal (13a) is fixed on the eleventh conductive sheet (22k) and is used for connecting to the DC bus. The third DC- terminal is fixed on the fourteenth conductive sheet (22n) and is used for connecting to the lower half-bridges of the two bridge arms of the inverter switch circuit (131).

10. The switch integration module according to claim 9, wherein The active filter switch circuit (132) includes an upper half-bridge and a lower half-bridge. The upper half-bridge is fixed on the eleventh conductive sheet (22k), and the lower half-bridge is fixed on the fifteenth conductive sheet (22o) on the second substrate (2b).

11. The switch integration module according to claim 10, wherein The eleventh conductive sheet (22k) has a connected third part and a fourth part. The third part and the fourth part are arranged along a second direction. The upper half-bridges of the two bridge arms are both located in the third part, and one upper half-bridge is located in the fourth part. The fourth part and the fifteenth conductive sheet (22o) are arranged at intervals along a first direction. The eleventh conductive sheet (22k), the twelfth conductive sheet (22l), the thirteenth conductive sheet (22m), and the fourteenth conductive sheet (22n) are arranged at intervals along the second direction. The first direction is the length direction of the plurality of substrates (2), and the second direction is the width direction of the plurality of substrates (2).

12. A energy storage converter, characterized in that the energy storage converter includes the switch integration module according to any one of claims 1-11.

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