Preparation method of LED high-voltage chip and LED high-voltage chip

Abstract

The invention provides a preparation method of an LED high-voltage chip, and the method comprises the steps: providing a transparent substrate, a first substrate, a plurality of LED chips, and a first chip transfer structure; wherein the plurality of LED chips are arranged on the first substrate, and the light emitting surfaces of the plurality of LED chips are in contact with the first substrate; the first chip transfer structure comprises a second substrate and a plurality of viscous bumps arranged on the second substrate; wherein the arrangement mode of the plurality of sticky bumps is adaptive to the arrangement mode of a first preset number of LED chips in the LED high-voltage chips; the first preset number is matched with the required first voltage value of each LED high-voltage chip; transferring the first preset number of LED chips onto the transparent substrate by using a first chip transfer structure, and separating the plurality of bonding bumps from the corresponding LED chips to form the first preset number of LED chips on the transparent substrate; and forming a first insulating layer, an electrode connecting layer, a P electrode interconnection metal layer 110, an N electrode interconnection metal layer 109, a heat dissipation metal plate and a second insulating layer.

Description

Technical Field

[0001] The present invention relates to the field of LED chip manufacturing, and particularly to a method for preparing an LED high-voltage chip and an LED high-voltage chip. Background Art

[0002] Currently, from the perspective of the chip market, large LED chip companies have advantages such as a wide product range, high output, and strong supply capacity in the market competition. Therefore, they have sufficient strength to cope with market risks. For small-scale enterprises, the product variety is small, the output is low, and the price has no advantage, so the overall sales volume will decline, and ultimately they may be squeezed out of the market by competitors. Facing the situation of rapidly declining product prices, to reduce the production cost of products, it is necessary to quickly expand the production scale to improve the mass production capacity. Expansion of production can not only reduce the product cost, but also use the scale advantage to occupy the market share of competitors.

[0003] Both LED high-voltage chips and low-voltage chips have their own market demands. LED high-voltage chips may be a market trend in the future, but currently the technology of LED high-voltage chips is still constantly evolving. The LED high-voltage chip products on the market are basically in the stage of small-scale mass production. Compared with low-voltage chips, LED high-voltage chips have two obvious competitive advantages: First, LED high-voltage chips are connected in series at the chip end, and the reliability is better guaranteed. For packaging, some die bonding and wire bonding processes are saved, and the gold wire cost is saved. At the same time, the way of resistor-capacitor step-down can be adopted, and the power supply scheme can be optimized, and the power supply cost is reduced. For the entire lighting fixture, the materials are systematically saved and the cost is reduced. Second, LED high-voltage chips can greatly reduce the loss of AC-DC conversion efficiency. Taking a 10W output power as an example, if a 1W LED high-voltage chip with a forward voltage drop of 50V is used, a configuration of 2 parallel and 4 series can be adopted at the output end. The forward voltage drop of 4 series-connected LEDs is 200V, that is, only 20V needs to be stepped down from the 220V AC mains power supply by using a bridge rectifier. However, if a 1W low-voltage LED with a forward voltage drop of 3V is used, even if 10 are connected in series, the forward voltage drop is only 30V, that is, it is necessary to step down the 220V AC mains power supply to 30V DC. As we know, the lower the input and output voltage difference, the higher the AC-DC conversion efficiency. It can be seen that if high-voltage LEDs are used, the efficiency of the transformer can be greatly improved, thereby greatly reducing the power loss during AC-DC conversion. This reduction in heat dissipation can further reduce the cost of the heat dissipation housing.

[0004] It can be seen that LED high-voltage chips can effectively reduce the cost and weight of LED lighting fixtures. More importantly, it greatly reduces the design requirements for the heat dissipation system, thus effectively clearing the biggest technical obstacle for LED lighting fixtures to enter the indoor lighting market. LED high-voltage chips have become a low-cost and high-light-efficiency solution for lighting fixtures.

[0005] Since the industry began to invest in the research and development of Mini LED backlight technology around 2017, terminal manufacturers represented by Apple, Samsung, Huawei, TCL, etc. have successively tried to apply this technology to products such as monitors, iPads, and TVs. During this process, the industry has actively discussed and effectively attempted a number of key issues.

[0006] In terms of technology, the industry has different opinions on technical routes such as using PCB / glass substrates for Mini LED backlight modules and PM direct drive / PM scanning / AM drive modes. BOE was the first to try glass substrates, and currently most have converged to the lower-cost single-layer PCB aluminum substrate solution. The drive method is closely related to the number of partitions, substrate selection, display effects, etc. In recent years, the AM solution has been increasingly recognized and widely used in the industry. Mini LED backlight control requires the cooperation of a backlight control chip (DCON) and a backlight driver chip (Dimmer). Generally, one DCON is required for each screen, and its function is similar to a "total control switch" for controlling the backlight source. Dimmers can be divided into types such as single-channel, 4-channel, 8-channel, 16-channel, etc. One channel corresponds to one partition, and one partition can cover multiple LED lamp beads. Generally speaking, the higher the number of partitions, the finer the image quality, and the better the display effects such as contrast. At the same time, as the number of LED chips and partitions increases, the costs of LED chips and driver chips in the Mini LED backlight module will also increase accordingly.

[0007] With the continuous improvement of consumers' requirements for the image quality of LCD TVs, Local Dimming (local backlight adjustment), as the main technology for improving contrast, has been favored by major TV manufacturers. As is well known, the more partitions a TV has, the better the Local Dimming effect, the higher the dynamic contrast, and the better the image quality. When introducing the Local Dimming technology to a TV, the TV backlight is usually partitioned, with several lamps in one area or one lamp in one area. The main board analyzes the brightness of each area in real time according to the brightness algorithm of the image signal, and transmits the result to each area of the backlight in the form of a current value via SPI, so as to achieve the purpose of real-time brightness adjustment of the backlight, manifested as brighter areas being brighter and darker areas being darker, thereby improving the dynamic contrast.

[0008] Currently, high-end Local Dimming TV products have achieved one LED per zone or several LEDs per zone. The driving voltage of mainstream LEDs (light-emitting diodes) is 3.3V. The supporting power supply board uses 12V output to supply power to the constant current board. The constant current board steps down 12V to 3.3V through a BUCK circuit to supply power to the LEDs, and then performs constant current processing through a constant current chip. Because TVs using this driving method have many partitions and high module brightness indicators, in terms of user viewing, the TV display is clear and eye-catching, with bright colors and excellent picture quality, and is deeply loved by consumers.

[0009] However, in this driving method, since the LEDs are driven with large currents, the path from the negative electrode of each zone of LEDs to the constant current board is relatively long, so the line loss is very large. The constant current board has a relatively high temperature due to the heat generated by the negative electrode wire, and has relatively high requirements for the current-carrying capacity of components such as voltage-regulating diodes, which brings many inconveniences in component selection. In terms of temperature, it is necessary to add a heat sink to meet the requirements. Generally speaking, this system has low power efficiency, large line loss, low reliability, and relatively high costs.

[0010] Here, we introduce the concept of high-voltage LEDs, that is, change the electrical characteristics of the LEDs, change the electrical specifications of the LEDs from 3.3V to high-voltage specifications, while keeping their optical characteristics unchanged (including the luminous brightness of the LEDs, the luminous curve, and the matching light pattern with the optical LENS). The purpose of doing this is as follows: Using high-voltage-specification LEDs, the constant current board does not need to perform step-down processing, but directly supplies power to the LEDs through the output of the power supply board and performs constant current driving on the LEDs through a constant current IC, that is, the constant current board can omit the 12V-to-3.3V BUCK circuit. The current-carrying value specifications of all LED-related components can be reduced, with more choices and correspondingly lower prices. At the same time, the loop line loss of the entire system's LEDs is only 13.3% of that before, and the line loss is greatly reduced. The temperature rise of the components of the constant current board has also been greatly improved compared with before, and the reliability is better. Since the constant current board omits the BUCK unit circuit, the space of the PCB is more sufficient, and the layout and wiring are more convenient. The PCB board can be changed from a four-layer board to a two-layer board, with lower costs.

[0011] However, in high-voltage LED chips, limited by the existing transfer technology, it is difficult to reduce the distance between several LED chips that make up the high-voltage LED chip. Therefore, fabricating more high-voltage LED chips on a PCB board of limited size is a technical problem that those skilled in the art need to overcome. Therefore, researching a new chip transfer technology has become a technical problem that those skilled in the art urgently need to solve. Summary of the Invention

[0012] The present invention provides a method for fabricating a high-voltage LED chip and a high-voltage LED chip to solve the problem of the difficulty in reducing the distance between several LED chips in a high-voltage LED chip.

[0013] According to a first aspect of the present invention, there is provided a method for manufacturing an LED high-voltage chip, which is applied to a backlight driving lamp board structure. The method includes:

[0014] Providing a transparent substrate, a first substrate, a plurality of LED chips, and a first chip transfer structure; wherein, the plurality of LED chips are placed on the first substrate, and the light-emitting surfaces of the plurality of LED chips are in contact with the first substrate; the first chip transfer structure includes a second substrate and a plurality of adhesive bumps arranged on the second substrate; wherein, the arrangement mode of the first preset number of the plurality of adhesive bumps is adapted to the arrangement mode of the first preset number of LED chips in the LED high-voltage chip; the first preset number is adapted to the first voltage value required for each of the LED high-voltage chips;

[0015] Using the first chip transfer structure, transferring the first preset number of LED chips to the transparent substrate, and separating the plurality of bonding bumps from the corresponding LED chips to form the first preset number of LED chips on the transparent substrate; wherein, after the transfer, the first preset number of LED chips are bonded together with the transparent substrate; wherein, the acting force between the plurality of LED chips and the first substrate is less than the bonding force between the LED chips and the plurality of bonding bumps; the bonding force between the LED chips and the transparent substrate is greater than the bonding force between the LED chips and the plurality of bonding bumps;

[0016] Forming a first insulating layer, an electrode connection layer, a P-electrode interconnecting metal layer, an N-electrode interconnecting metal layer, a heat dissipation metal plate, and a second insulating layer; wherein, the electrode connection layer sequentially connects the P electrodes and N electrodes of different LED chips; the second insulating layer is formed on the tops of the first preset number of LED chips; the P-electrode interconnecting metal layer and the N-electrode interconnecting metal layer are respectively formed on the tops of the P electrodes and N electrodes not connected by the electrode connection layer, and both penetrate through the second insulating layer and cover the surfaces of part of the second insulating layer; the first insulating layer is formed between the electrode connection layer and the LED chips and the transparent substrate, and covers the exposed surfaces of the LED chips and the transparent substrate.

[0017] Optionally, using the first chip transfer structure, transferring the first preset number of LED chips to the transparent substrate, and separating the plurality of bonding bumps from the corresponding LED chips to form the first preset number of LED chips on the transparent substrate; specifically including:

[0018] Bond the first preset number of LED chips on the first substrate to the corresponding bonding bumps, and separate the first preset number of LED chips from the first substrate;

[0019] Using the first chip transfer structure, transfer the first preset number of LED chips to the transparent substrate, and at the same time, the first preset number of LED chips are all bonded to the transparent substrate;

[0020] Separate the several bonding bumps from the corresponding LED chips to form the first preset number of LED chips on the transparent substrate.

[0021] Optionally, the first preset number is two or greater than two.

[0022] Optionally, the first preset number of LED chips are bonded to the transparent substrate through glue.

[0023] Optionally, the material of the several adhesive bumps is: temporary bonding glue or wax.

[0024] According to the second aspect of the present invention, there is provided an LED high-voltage chip, which is prepared by using the preparation method of the LED high-voltage chip according to any one of the first aspects of the present invention; the LED high-voltage chip includes:

[0025] The transparent substrate and the first preset number of LED chips formed on the transparent substrate; the first preset number is adapted to the first voltage value of each of the required LED high-voltage chips;

[0026] The first insulating layer, the electrode connection layer, the P-electrode interconnecting metal layer, the N-electrode interconnecting metal layer, the heat dissipation metal plate and the second insulating layer; wherein, the electrode connection layer sequentially connects the P electrodes and N electrodes of different LED chips; the second insulating layer is formed on the top of the first preset number of LED chips; the P-electrode interconnecting metal layer and the N-electrode interconnecting metal layer are respectively formed on the tops of the P electrodes and N electrodes not connected by the electrode connection layer, and both penetrate through the second insulating layer and cover the surface of part of the second insulating layer; the first insulating layer is formed between the electrode connection layer and the LED chips and the transparent substrate, and covers the exposed surfaces of the LED chips and the transparent substrate.

[0027] Optionally, the first preset distance between the first preset number of LED chips is an integer multiple of the size of a single LED chip.

[0028] According to a third aspect of the present invention, there is provided a method for preparing an AM backlight driving lamp board structure, including the method for preparing an LED high-voltage chip according to any one of the first aspects of the present invention.

[0029] According to a fourth aspect of the present invention, there is provided an AM backlight driving lamp board structure, including a plurality of LED high-voltage chips according to the second aspect of the present invention.

[0030] According to a fifth aspect of the present invention, there is provided a method for preparing a liquid crystal display screen, including the method for preparing an AM backlight driving lamp board structure according to the third aspect of the present invention.

[0031] According to a sixth aspect of the present invention, there is provided a liquid crystal display screen, including the AM backlight driving lamp board structure according to the fourth aspect of the present invention.

[0032] The present invention provides a method for preparing an LED high-voltage chip. By designing appropriate interfacial forces and using a first chip transfer structure to transfer the LED chips on the first substrate to the transparent substrate, and simultaneously performing metal interconnection during the chip manufacturing stage, the required LED high-voltage chip is prepared; since the spacing between several LED chips in the LED high-voltage chip is related to the spacing between several bonding bumps, thus, as long as the spacing between several LED chips disposed on the first substrate is small enough, and in cooperation with bonding bumps having an appropriate spacing, a high-voltage chip with the required LED chip arrangement density can be prepared, and the spacing between several LED chips on the first substrate and the spacing between the bonding bumps are easily adjustable; therefore, the technical solution provided by the present application overcomes the problem of difficulty in reducing the distance between several LED chips. At the same time, since after the chips are transferred at one time, the metal series connection process and the interconnection process can be carried out before chip packaging. The metal interconnection is realized during the chip manufacturing stage, changing the original process flow of metal interconnection in the packaging stage, and can meet different preparation requirements.

[0033] Furthermore, in the method for preparing the AM backlight driving lamp board structure provided by the present invention, since the arrangement spacing between LED chips can be reduced, the technical purpose of preparing more high-voltage LED chips on a PCB board with a limited size can be achieved, increasing the arrangement quantity and density of the high-voltage chips. In addition, in large-scale mass production, the one-time transfer process saves process time, improves process efficiency, and increases industry competitiveness. Description of the Drawings

[0034] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0035] Figure 1 It is a schematic flowchart of a method for preparing an LED high-voltage chip provided by the present invention;

[0036] Figure 2 It is a schematic diagram of devices at different stages prepared according to the method for preparing an LED high-voltage chip provided by an embodiment of the present invention Figure 1 ;

[0037] Figure 3 It is a schematic diagram of devices at different stages prepared according to the method for preparing an LED high-voltage chip provided by an embodiment of the present invention Figure 2 ;

[0038] Figure 4 It is a schematic diagram of devices at different stages prepared according to the method for preparing an LED high-voltage chip provided by an embodiment of the present invention Figure 3 ;

[0039] Figure 5 It is a schematic diagram of devices at different stages prepared according to the method for preparing an LED high-voltage chip provided by an embodiment of the present invention Figure 4 ;

[0040] Figure 6 It is a schematic diagram of devices at different stages prepared according to the method for preparing an LED high-voltage chip provided by an embodiment of the present invention Figure 5 ;

[0041] Figure 7 It is a schematic diagram of devices at different stages prepared according to the method for preparing an LED high-voltage chip provided by an embodiment of the present invention Figure 6 ;

[0042] Figure 8 It is a schematic diagram of devices at different stages prepared according to the method for preparing an LED high-voltage chip provided by an embodiment of the present invention Figure 7 ;

[0043] Explanation of reference numerals:

[0044] 101 - First substrate;

[0045] 102 - LED chip;

[0046] 1021 - N-GaN layer;

[0047] 1022 - Quantum well layer;

[0048] 1023 - P-GaN layer;

[0049] 1024 - Reflector layer;

[0050] 1025 - LED chip insulating layer;

[0051] 1026 - P-PAD layer;

[0052] 1027 - N-PAD layer;

[0053] 103 - First chip transfer structure;

[0054] 1031 - Second substrate;

[0055] 1032 - Bonding bump;

[0056] 104 - Transparent substrate;

[0057] 105 - Glue;

[0058] 106 - First insulating layer;

[0059] 107 - Electrode connection layer;

[0060] 108 - Second insulating layer;

[0061] 109 - N-electrode interconnection metal layer;

[0062] 110 - P-electrode interconnection metal layer;

[0063] 111 - Heat dissipation metal plate. Detailed implementation manners

[0064] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0065] In the description and claims of the present invention and the above-mentioned drawings, the terms "first", "second", "third", "fourth", etc. (if any) are used to distinguish similar objects and do not necessarily describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that comprises a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products, or devices.

[0066] As the number of partitions required for the AM driving chip light board in the liquid crystal display screen increases, and the number of components that can be accommodated on the area of the PCB is limited, further improving the display effect is restricted.

[0067] In view of this, the inventors of the present application creatively proposed a method for preparing a high-voltage chip that uses a chip transfer structure to transfer LED chips on the original substrate to a glass substrate and performs metal interconnection during the chip manufacturing stage; wherein, the chip transfer structure includes a transfer substrate and a number of bonding bumps formed thereon, and the bonding bumps are used to bond LED chips during the transfer process. On the one hand, in the technical solution provided by the present application, since the spacing between several LED chips in the high-voltage chip is related to the spacing between several bonding bumps, as long as the distance between several LED chips disposed on the original substrate is small enough, and the bonding bumps with a small enough spacing are used, a high-voltage chip with the required LED chip spacing can be prepared, and the former is very easy to achieve; therefore, the technical solution provided by the present application overcomes the difficulty of reducing the distance between several LED chips, and further more high-voltage LED chips can be prepared on a PCB board of a limited size. In addition, the one-time transfer process saves process time and improves process efficiency.

[0068] On the other hand, since the traditional transfer technology transfers several LED chips to the PCB board separately through a single-chip transfer technology and forms a high-voltage chip after several transfers; therefore, the subsequent metal series connection process and interconnection process between chips need to be completed during packaging. In the method for preparing a high-voltage chip provided by the present application, after the chips are transferred at one time, the metal series connection process and interconnection process can be carried out before chip packaging. Metal interconnection during the chip manufacturing stage is realized, and the original process flow of performing metal interconnection during the packaging stage is changed, which can meet different preparation requirements.

[0069] The technical solution of the present invention will be described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0070] Please refer to Figures 1 - 8 , according to an embodiment of the present invention, a method for preparing an LED high-voltage chip is provided. As Figure 1 shown, the LED high-voltage chip is applied to an AM backlight driving lamp board structure, and the method includes: S11 - S13:

[0071] S11: Provide a transparent substrate 104, a first substrate 101, and a plurality of LED chips 102, as Figure 2 shown, and a first chip transfer structure 103, as Figure 3 shown; wherein, the plurality of LED chips 102 are placed on the first substrate 101, and the light-emitting surfaces of the plurality of LED chips 102 contact the first substrate 101; in a specific example, as Figure 4 shown; the LED chip 102 includes but is not limited to: an N-GaN layer 1021, a quantum well layer 1022, a P-GaN layer 1023, a mirror layer 1024, an LED chip 102 insulating layer 1025, a P-PAD layer 1026, an N-PAD layer 1027, an N-GaN layer 1021, a quantum well layer 1022, a P-GaN layer 1023, a mirror layer 1024, an LED chip 102 insulating layer 1025, a P-PAD layer 1026, and an N-PAD layer 1027. Among them, the N-GaN layer 1021 contacts the first substrate 101; the quantum well layer 1022, the P-GaN layer 1023, the mirror layer 1024, and the LED chip 102 insulating layer 1025 are sequentially formed on the N-GaN layer 1021 in a direction away from the first substrate 101; the LED chip 102 insulating layer 1025 covers a part of the surface of the mirror layer, and the P-PAD layer 1026 and the N-PAD layer 1027 penetrate the foregoing stacked layers until the P-GaN layer 1023 and the N-GaN layer 1021 respectively; in a specific example, the transparent substrate is transparent optical glass.

[0072] In one embodiment, phosphor or quantum dots may also be provided on the side of the transparent substrate 104 close to the glue, so that the LED high-voltage chip emits white light.

[0073] In another embodiment, the phosphor or quantum dots may also be sintered in the transparent substrate 104.

[0074] Among them, in one implementation, rare earth fluorescent powder can be selected as the color conversion material, and a monochromatic short-wavelength LED chip is used to excite the fluorescent powder to synthesize white light. In a specific example, it can be: blue LED + yellow-green fluorescent powder, near-ultraviolet LED + trichromatic fluorescent powder, etc.

[0075] In another preferred implementation, quantum dots can be red and green quantum dots, and this implementation is applicable to QD-LED. Among them, since the wavelength of QD-LED is adjustable, a high color gamut under standards such as NTSC, DCI-P3, and BT2020 can be achieved according to requirements. Among them, the NTSC color gamut can reach 115%, and the DCI-P3 color gamut can reach 100%.

[0076] The first chip transfer structure 103 includes a second substrate 1031 and a first preset number of a plurality of adhesive bumps arranged on the second substrate 1031; among them, the arrangement of the first preset number of a plurality of adhesive bumps is adapted to the arrangement of the first preset number of LED chips 102 in the LED high-voltage chip;

[0077] Among them, in a specific example, when a plurality of adhesive bumps or a plurality of LED chips 102 are arranged in sequence in one direction, the adaptation of the arrangement of a plurality of adhesive bumps or the arrangement of LED chips 102 means that the spacing between two adjacent adhesive bumps or two LED chips 102 is adapted, so that: after the LED chips 102 are transferred by the first chip transfer structure 103, the spacing between a plurality of LED chips 102 in the high-voltage chip meets the first preset spacing. In another specific example, when a plurality of adhesive bumps or a plurality of LED chips 102 are all arranged in an array, the arrangement of a plurality of adhesive bumps or the arrangement of LED chips 102 means that the row spacing and column spacing between the array-distributed adhesive bumps or the array-distributed LED chips 102 are adapted, so that: after the LED chips 102 are transferred by the first chip transfer structure 103, the row spacing and column spacing between the array-arranged LED chips 102 in the high-voltage chip meet the first preset spacing. Among them, since in the technical solution provided by the present invention, the first preset spacing can be adjusted and realized according to the spacing between a plurality of adhesive bumps, therefore, the spacing between the LED chips 102 in the high-voltage chip can reach a small spacing that cannot be achieved in the prior art; in one embodiment, the first preset spacing is: an integer multiple of the size of a single LED chip. In one embodiment, the first preset number is two or greater than two. The first preset number is adapted to the first voltage value required for each of the LED high-voltage chips; in a specific example, if the first voltage value is about 6V, then the first preset number is 3; in other specific examples, if the first voltage value is 12V, then the value of the first preset number is 4.

[0078] Among them, the acting force between the several LED chips 102 and the first substrate 101 is less than the bonding force between the LED chips 102 and the several bonding bumps 1032. In a specific example, the first substrate 101 serves as the carrier of the LED chips 102. The LED chips 102 have been separated from the growth substrate but still remain on the growth substrate, so that the acting force between the LED chips 102 and the first substrate 101 is small enough. When the bonding bumps 1032 bond to the LED chips 102, the LED chips 102 are easily separated from the first substrate 101.

[0079] S12: Use the first chip transfer structure 103 to transfer the first preset number of LED chips 102 onto the transparent substrate 104, and separate the several bonding bumps 1032 from the corresponding LED chips 102, so as to form the first preset number of LED chips 102 on the transparent substrate 104. Among them, after the transfer, the first preset number of LED chips 102 are bonded together with the transparent substrate 104. Among them, the bonding force between the LED chips 102 and the transparent substrate 104 is greater than the bonding force between the LED chips 102 and the several bonding bumps 1032. In an embodiment, the surface of the transparent substrate 104 is also coated with glue 105, and the first preset number of LED chips 102 and the transparent substrate 104 are bonded through the glue 105. In an embodiment, the material of the several sticky bumps is: temporary bonding glue or wax 105.

[0080] In an embodiment, in step S12, use the first chip transfer structure 103 to transfer the first preset number of LED chips 102 onto the transparent substrate 104, and separate the several bonding bumps 1032 from the corresponding LED chips 102, so as to form the first preset number of LED chips 102 on the transparent substrate 104. Specifically, it includes steps S121 - S123:

[0081] S121: Bond the first preset number of LED chips 102 on the first substrate 101 to the corresponding bonding bumps 1032, and separate the first preset number of LED chips 102 from the first substrate 101; as Figure 5 shown;

[0082] S122: Use the first chip transfer structure 103 to transfer the first preset number of LED chips 102 onto the transparent substrate 104, and at the same time, the first preset number of LED chips 102 are all bonded to the transparent substrate 104; as Figure 6 shown;

[0083] S123: Separate the plurality of bonding bumps 1032 from the corresponding LED chips 102 to form a first preset number of LED chips 102 on the transparent substrate 104, as Figure 7 shown.

[0084] S13: Form a first insulating layer 106, an electrode connection layer 107, a P - electrode interconnecting metal layer 110, an N - electrode interconnecting metal layer 109, a heat - dissipating metal plate 111, and a second insulating layer 108; wherein, the electrode connection layer 107 connects the P - electrodes and N - electrodes of different LED chips 102 in sequence; the second insulating layer 108 is formed on the tops of the first preset number of LED chips 102; the P - electrode interconnecting metal layer 110 and the N - electrode interconnecting metal layer 109 are respectively formed on the tops of the P - electrodes and N - electrodes not connected by the electrode connection layer 107, both penetrate through the second insulating layer 108, and cover the surfaces of part of the second insulating layer 108; the first insulating layer 106 is formed between the electrode connection layer 107, the LED chips 102, and the transparent substrate 104, and covers the exposed surfaces of the LED chips 102 and the transparent substrate 104, as Figure 8 shown. The material of the second insulating layer is a high - insulating material or a material with a high - reflection effect.

[0085] It can be seen that in the technical solution provided by the present invention, when the first preset number is two or greater than two, the LED high - voltage chips fabricated on the transparent substrate 104 can achieve the series connection of three or more LED chips 102, thereby realizing the fabrication of high - voltage chips above 6V.

[0086] According to an embodiment of the present invention, there is also provided an LED high - voltage chip, which is fabricated by using the preparation method of the LED high - voltage chip according to any one of the foregoing embodiments of the present invention; the LED high - voltage chip includes:

[0087] the transparent substrate 104, and a first preset number of LED chips 102 formed on the transparent substrate 104; the first preset number is adapted to the first voltage value of each of the required LED high - voltage chips;

[0088] The first insulating layer 106, the electrode connection layer 107, the P-electrode interconnection metal layer 110, the N-electrode interconnection metal layer 109, the heat dissipation metal plate 111, and the second insulating layer 108; wherein, the electrode connection layer 107 sequentially connects the P-electrodes and N-electrodes of different LED chips 102; the second insulating layer 108 is formed on the tops of the first preset number of LED chips 102; the P-electrode interconnection metal layer 110 and the N-electrode interconnection metal layer 109 are respectively formed on the tops of the P-electrodes and N-electrodes not connected by the electrode connection layer 107, both penetrate the second insulating layer 108, and cover the surfaces of part of the second insulating layer 108; the first insulating layer 106 is formed between the electrode connection layer 107, the LED chips 102, and the transparent substrate 104, and covers the surfaces of the exposed LED chips 102 and the transparent substrate 104. In summary, the preparation method of the LED high-voltage chip and the LED high-voltage chip provided by the present invention use the first chip transfer structure 103 to transfer the LED chips 102 to prepare the LED high-voltage chip, overcoming the problem of difficulty in reducing the distance between several LED chips 102, and thus more LED high-voltage chips can be prepared on a PCB board of limited size. In addition, the one-time transfer process saves process time and improves process efficiency. In addition, in the preparation method of the high-voltage chip provided by the present application, after the chips are transferred at one time, the metal series connection process and the interconnection process can be carried out before chip packaging. Metal interconnection is realized in the chip manufacturing stage, changing the original process flow of metal interconnection in the packaging stage, and can meet different preparation requirements.

[0089] Secondly, according to an embodiment of the present invention, a preparation method of an AM backlight driving lamp board structure is provided, including the preparation method of the LED high-voltage chip according to any one of the foregoing embodiments of the present invention.

[0090] According to an embodiment of the present invention, an AM backlight driving lamp board structure is further provided, including several LED high-voltage chips according to the foregoing embodiments of the present invention.

[0091] As a typical embodiment of the AM backlight driving lamp board structure, in other embodiments, the manufacturing method of the LED high-voltage chip provided by the present invention can also be applied to other lamp board structures, which will not be elaborated herein.

[0092] In addition, according to an embodiment of the present invention, a preparation method of a liquid crystal display screen is provided, including the preparation method of the AM backlight driving lamp board structure according to the foregoing embodiments of the present invention.

[0093] According to an embodiment of the present invention, a liquid crystal display screen is provided, including the AM backlight driving lamp board structure according to the foregoing embodiments of the present invention.

[0094] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the various embodiments of the present invention.

Claims

1. A method for preparing an LED high-voltage chip, the LED high-voltage chip being applied to a backlight driving lamp board structure, characterized in that, The method includes: providing a transparent substrate, a first substrate, a plurality of LED chips, and a first chip transfer structure; wherein, the plurality of LED chips are disposed on the first substrate, and the light-emitting surfaces of the plurality of LED chips contact the first substrate; the first chip transfer structure includes a second substrate and a plurality of adhesive bumps arranged on the second substrate; wherein, the arrangement of the first preset number of the plurality of adhesive bumps is adapted to the arrangement of the first preset number of LED chips in the LED high-voltage chips; the first preset number is adapted to the first voltage value of each of the required LED high-voltage chips; using the first chip transfer structure to transfer the first preset number of LED chips to the transparent substrate, and separating the plurality of bonding bumps from the corresponding LED chips to form the first preset number of LED chips on the transparent substrate; wherein, after the transfer, the first preset number of LED chips are bonded together with the transparent substrate; wherein, the acting force between the plurality of LED chips and the first substrate is less than the bonding force between the LED chips and the plurality of bonding bumps; the bonding force between the LED chips and the transparent substrate is greater than the bonding force between the LED chips and the plurality of bonding bumps; forming a first insulating layer, an electrode connection layer, a P-electrode interconnecting metal layer, an N-electrode interconnecting metal layer, a heat dissipation metal plate, and a second insulating layer; wherein, the electrode connection layer sequentially connects the P-electrodes and N-electrodes of different LED chips; the second insulating layer is formed on the tops of the first preset number of LED chips; the P-electrode interconnecting metal layer and the N-electrode interconnecting metal layer are respectively formed on the tops of the P-electrodes and N-electrodes not connected by the electrode connection layer, and both penetrate through the second insulating layer and cover the surfaces of part of the second insulating layer; the first insulating layer is formed between the electrode connection layer, the LED chips, and the transparent substrate, and covers the exposed surfaces of the LED chips and the transparent substrate.

2. The manufacturing method of the LED high-voltage chip according to claim 1, characterized in that, using the first chip transfer structure to transfer the first preset number of LED chips to the transparent substrate, and separating the plurality of bonding bumps from the corresponding LED chips to form the first preset number of LED chips on the transparent substrate; specifically including: bonding the first preset number of LED chips on the first substrate to the corresponding bonding bumps, and separating the first preset number of LED chips from the first substrate; using the first chip transfer structure to transfer the first preset number of LED chips to the transparent substrate, and at the same time, the first preset number of LED chips are bonded to the transparent substrate; separating the plurality of bonding bumps from the corresponding LED chips to form the first preset number of LED chips on the transparent substrate.

3. The manufacturing method of the LED high-voltage chip according to claim 1, wherein, The first preset number is two or greater than two.

4. The manufacturing method of the LED high-voltage chip according to claim 2, characterized in that, The first preset number of LED chips and the transparent substrate are bonded together by glue.

5. The manufacturing method of the LED high-voltage chip according to claim 4, characterized in that, The material on the plurality of adhesive bumps is: temporary bonding glue or wax.

6. An LED high-voltage chip, characterized in that, Prepared by using the preparation method of the LED high-voltage chip according to any one of claims 1-7; the LED high-voltage chip includes: The transparent substrate, and a first preset number of LED chips formed on the transparent substrate; the first preset number is adapted to the first voltage value of each of the required LED high-voltage chips; The first insulating layer, the electrode connection layer, the P-electrode interconnection metal layer, the N-electrode interconnection metal layer, the heat dissipation metal plate, and the second insulating layer; wherein, the electrode connection layer sequentially connects the P-electrodes and N-electrodes of different LED chips; the second insulating layer is formed on the top of the first preset number of LED chips; the P-electrode interconnection metal layer and the N-electrode interconnection metal layer are respectively formed on the tops of the P-electrodes and N-electrodes not connected by the electrode connection layer, and both penetrate the second insulating layer and cover the surface of a part of the second insulating layer; the first insulating layer is formed between the electrode connection layer and the LED chips and the transparent substrate, and covers the exposed LED chips and the surface of the transparent substrate.

7. The LED high-voltage chip according to claim 6, characterized in that, The first preset distance between the first preset number of LED chips is an integer multiple of the size of a single LED chip.

8. A preparation method of an AM backlight driving lamp board structure, characterized in that, It includes the preparation method of the LED high-voltage chip according to any one of claims 1-5.

9. A structure of an AM backlight driving lamp board, characterized in that, It includes a number of LED high-voltage chips according to claim 6.

10. A method for preparing a liquid crystal display screen, characterized in that, It includes the preparation method of the AM backlight driving lamp board structure according to claim 8.

11. A liquid crystal display screen, characterized in that, It includes the AM backlight driving lamp board structure according to claim 9.

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