Bonding method for electronic components and method for mass transfer of electronic components

Abstract

The invention discloses a bonding method of electronic components and a method for transferring a large amount of electronic components, and the bonding method comprises the steps: providing a first substrate which is provided with a first upper surface and a first lower surface which are opposite to each other, the first upper surface of the first substrate is provided with a plurality of electronic components which are mutually spaced and are arranged in a column or a row; a second substrate is provided and arranged below the first substrate, the second substrate is provided with a second upper surface and a second lower surface which are opposite to each other, and the first upper surface faces the second upper surface; and providing a laser device, emitting a planar laser on the first substrate, irradiating the electronic components which are positioned on the first upper surface of the first substrate and are arranged in a row or a row, and stripping the electronic components from the first upper surface of the first substrate and bonding the electronic components to the second upper surface of the second substrate.

Description

Technical Field

[0001] The present invention relates to a method for bonding electronic components and a method for transferring a large number of electronic components. Background Art

[0002] Light-emitting diodes have the advantages of active light emission, high brightness, energy saving, etc., and thus have been widely used in technical fields such as lighting, displays, projectors, etc. Moreover, micro light-emitting diode displays (Micro LED displays) have gradually become a new generation of display technology. However, a high-density (FHD: Full High Density) display has about 2 million pixels with 1920 rows multiplied by 1080 columns, and each pixel needs to be further divided into three sub-pixels of red, green, and blue. Therefore, a high-density light-emitting diode display (FHD LED Display) has a total of about 6 million LED dies. The key technology for cutting and pasting 6 million dies onto the substrate of the display panel lies in how to accurately transfer a large number of micro light-emitting diodes to the substrate of the display panel and fix and bond them.

[0003] The conventional method for bonding electronic components mainly uses the reflow soldering method, in which the electronic components are soldered to a target substrate after the solder paste is heated and reflowed. However, the disadvantages of the reflow soldering method are that during the reflow process, there will be problems such as the drift of electronic components due to uneven heating, short circuits of electronic components due to excessive solder paste, open soldering due to insufficient solder paste, or cold soldering due to too low reflow temperature.

[0004] In addition, the conventional methods for transferring a large number of electronic components mainly include electrostatic transfer, magnetic transfer, microtransfer printing, and fluid assembly. However, for these several methods of transferring a large number of electronic components, their transfer rates and yields still need to be further improved.

[0005] In view of this, a novel method for bonding electronic components and a method for transferring a large number of electronic components are eagerly anticipated in the industry. Summary of the Invention

[0006] The present invention discloses a method for bonding electronic components, which is characterized by including the following steps: providing a first substrate, the first substrate having opposite first upper and first lower surfaces, wherein the first upper surface of the first substrate has a plurality of electronic components, and the plurality of electronic components are spaced apart from each other and arranged in a row or a column; Provide a second substrate and dispose the second substrate below the first substrate. The second substrate has an opposite second upper surface and a second lower surface, and the first upper surface faces the second upper surface; and provide a laser device that can emit a shaped laser on the first substrate, and cause the shaped laser to irradiate the plurality of electronic components arranged in a row or a column on the first upper surface of the first substrate, and cause the plurality of electronic components to be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

[0007] The foregoing method for bonding electronic components, wherein the plurality of electronic components are selected from a group consisting of one or more of a light-emitting diode, a laser diode, and a semiconductor component.

[0008] The foregoing method for bonding electronic components, wherein the semiconductor component is selected from a group consisting of a processor, a memory IC, a micro-component IC, a logic IC, and an analog IC.

[0009] The foregoing method for bonding electronic components, wherein the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0010] The foregoing method for bonding electronic components, wherein the laser device has a first laser divergence angle θ1 and a second laser divergence angle θ2, and the length of the shaped laser can be controlled by adjusting the angle of the first laser divergence angle θ1, and the width of the shaped laser can be controlled by adjusting the angle of the second laser divergence angle θ2.

[0011] The foregoing method for bonding electronic components, wherein the angle of the first laser divergence angle θ1 is greater than or equal to one degree, and the angle of the second laser divergence angle θ2 is greater than or equal to one degree.

[0012] The foregoing method for bonding electronic components, wherein the shaped laser includes a preheating zone and a welding zone, and the shaped laser irradiates the plurality of electronic components arranged in a row or a column on the first upper surface of the first substrate in sequence with the preheating zone and the welding zone, and causes the plurality of electronic components to be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

[0013] The foregoing method for bonding electronic components, wherein the laser device includes a laser source and an optical component, and the laser emitted by the laser source is converted into a shaped laser by the optical component.

[0014] The foregoing method for bonding electronic components, wherein the optical component is a diffractive optical component, and / or a refractive optical component, and / or a reflective optical component.

[0015] The present invention further discloses another method for massive transfer of electronic components, which is characterized by including the following steps: providing a first substrate having opposite first upper and lower surfaces, wherein a plurality of electronic components are disposed on the first upper surface of the first substrate, and the plurality of electronic components are respectively arranged along a first axis direction and a second axis direction to form a first electronic component array formed by arranging M rows of electronic components multiplied by N columns of electronic components, wherein both M and N are natural numbers greater than 1; providing a second substrate and disposing the second substrate under the first substrate, the second substrate having opposite second upper and lower surfaces, and the first upper surface facing the second upper surface; and providing a laser device that can emit a planar laser on the first substrate and cause the planar laser to sequentially irradiate one row or adjacent rows in the first electronic component array along the first axis direction, or cause the planar laser to sequentially irradiate one column or adjacent columns in the first electronic component array along the second axis direction, and cause the plurality of electronic components irradiated by the planar laser to be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate. After all the plurality of electronic components in the first electronic component array are sequentially peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate, a second electronic component array formed by arranging M rows of electronic components multiplied by N columns of electronic components can be formed on the second upper surface of the second substrate.

[0016] The foregoing another method for massive transfer of electronic components, wherein the plurality of electronic components are selected from a group consisting of one or more of a light-emitting diode, a laser diode, and a semiconductor component.

[0017] The foregoing another method for massive transfer of electronic components, wherein the semiconductor component is selected from a group consisting of a processor, a memory IC, a micro-component IC, a logic IC, and an analog IC.

[0018] The foregoing another method for massive transfer of electronic components, wherein the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0019] The aforesaid another method for transferring a large number of electronic components, wherein the laser device has a first laser divergence angle θ1 and a second laser divergence angle θ2, and the length of the planar laser can be controlled by adjusting the angle of the first laser divergence angle θ1, and the width of the planar laser can be controlled by adjusting the angle of the second laser divergence angle θ2.

[0020] The aforesaid another method for transferring a large number of electronic components, wherein the angle of the first laser divergence angle θ1 is greater than or equal to one degree.

[0021] The aforesaid another method for transferring a large number of electronic components, wherein the angle of the second laser divergence angle θ2 is greater than or equal to one degree.

[0022] The aforesaid another method for transferring a large number of electronic components, wherein the planar laser includes a preheating area and a welding area, and the planar laser irradiates one row or adjacent rows in the first electronic component array in sequence with the preheating area and the welding area along the first axis direction, or the planar laser irradiates one column or adjacent columns in the first electronic component array in sequence with the preheating area and the welding area along the second axis direction, and makes the multiple electronic components irradiated by the planar laser be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

[0023] The aforesaid another method for transferring a large number of electronic components, wherein the laser device includes a laser source and an optical component, and the laser emitted by the laser source is converted into a planar laser by the optical component.

[0024] The aforesaid another method for transferring a large number of electronic components, wherein the optical component is a diffractive optical component, and / or a refractive optical component, and / or a reflective optical component. Description of the Drawings

[0025] Figures 1A to 1D is a method for bonding electronic components illustrated according to an embodiment of the present invention.

[0026] Figures 2A to 2E is a method for bonding electronic components illustrated according to another embodiment of the present invention.

[0027] Figures 3A to 3F is a method for transferring a large number of electronic components illustrated according to an embodiment of the present invention.

[0028] Figures 4A to 4F is a method for transferring a large number of electronic components illustrated according to another embodiment of the present invention.

[0029] Among them, a brief description of the symbols in the drawings is as follows: 10, 100 First substrate 10A, 100A First upper surface 10B, 100B First lower surface 12, 120 Electronic components 20, 200 Second substrate 20A, 200A Second upper surface 20B, 200B Second lower surface 150 First electronic component matrix 250 Second electronic component matrix 30, 300 Laser device 31, 310 Laser source 32, 320 Optical components 35, 350 Surface-shaped laser 35A, 350A Preheating area 35B, 350B Welding area θ1 First laser divergence angle θ2 Second laser divergence angle Detailed implementation manners In order to make the description of the disclosure of the present invention more detailed and complete, the following provides an illustrative description of the implementation aspects and specific embodiments of the present invention; however, this is not the only form for implementing or applying the specific embodiments of the present invention. The following disclosed embodiments can be combined or replaced with each other under beneficial circumstances, or other embodiments can be added to one embodiment without further recording or explanation.

[0030] In the following description, many specific details will be described in detail to enable the reader to fully understand the following embodiments. However, the embodiments of the present invention can be practiced without such specific details. In other cases, well-known structures and devices are only schematically shown in the drawings for simplicity.

[0031] Embodiment Embodiment 1 First, please refer to Figure 1A . As Figure 1A shown, a first substrate 10 is provided. The aforementioned first substrate 10 has a relative first upper surface 10A and a first lower surface 10B. Among them, the first upper surface 10A of the aforementioned first substrate 10 has a plurality of electronic components 12, and the aforementioned plurality of electronic components 12 are spaced apart from each other and arranged in a column or a row. The aforementioned plurality of electronic components 12 are selected from, for example but not limited to, a group composed of one or more of light-emitting diodes, laser diodes, and semiconductor components, and the aforementioned semiconductor components are selected from, for example but not limited to, a group composed of one of a processor, a memory IC, a micro-component IC, a logic IC, and an analog IC.

[0032] Next, please refer to Figure 1B . As shown in Figure 1B , a second substrate 20 is provided and disposed under the first substrate 10. The second substrate 20 has opposite second upper surface 20A and second lower surface 20B, and the first upper surface 10A faces the second upper surface 20A. The second substrate 20 is, for example but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0033] Next, please refer to Figure 1C and Figure 1D . As shown in Figure 1C , a laser device 30 is provided. The laser device 30 can emit a planar laser 35 on the first substrate 10, and irradiate the planar laser 35 on the first upper surface 10A of the first substrate 10 where the plurality of electronic components 12 are arranged in a row or a column, and peel the plurality of electronic components 12 from the first upper surface 10A of the first substrate 10, and as shown in Figure 1D , bond them to the second upper surface 20A of the second substrate 20.

[0034] The laser device 30 according to this embodiment includes a laser source 31 and an optical component 32, and the laser emitted by the laser source 31 is converted into a planar laser 35 by the optical component 32. The optical component 32 is, for example but not limited to, a diffractive optical component, and / or a refractive optical component, and / or a reflective optical component. In addition, the laser device 30 has a first laser divergence angle θ1 and a second laser divergence angle θ2, and the length of the planar laser 35 can be controlled by adjusting the angle of the first laser divergence angle θ1, and the width of the planar laser 35 can be controlled by adjusting the angle of the second laser divergence angle θ2. Among them, the angle of the first laser divergence angle θ1 is greater than or equal to one degree; the angle of the second laser divergence angle θ2 is greater than or equal to one degree.

[0035] Embodiment 2 First, please refer to Figure 2A . As shown in Figure 2AAs shown, a first substrate 10 is provided. The first substrate 10 has opposite first upper surface 10A and first lower surface 10B. Among them, the first upper surface 10A of the first substrate 10 has a plurality of electronic components 12, and the plurality of electronic components 12 are spaced apart from each other and arranged in a column or a row. The plurality of electronic components 12 are selected from, for example but not limited to, a group composed of one or more of light-emitting diodes, laser diodes, and semiconductor components, and the semiconductor components are selected from, for example but not limited to, a group composed of one of a processor, a memory IC, a micro-component IC, a logic IC, and an analog IC.

[0036] Next, please refer to Figure 2B . As Figure 2B shown, a second substrate 20 is provided, and the second substrate 20 is disposed below the first substrate 10. The second substrate 20 has opposite second upper surface 20A and second lower surface 20B, and the first upper surface 10A faces the second upper surface 20A. The second substrate 20 is, for example but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0037] Then, please refer to Figures 2C to 2E . As Figures 2C to 2D shown, a laser device 30 is provided. The laser device 30 can emit a planar laser 35 on the first substrate 10, and the planar laser 35 includes a preheating area 35A and a welding area 35B. The planar laser 35 irradiates the plurality of electronic components 12 arranged in a column or a row on the first upper surface 10A of the first substrate 10 in the order of the preheating area 35A and the welding area 35B first, and separates the plurality of electronic components 12 from the first upper surface 10A of the first substrate 10, and as Figure 2E shown, joins them to the second upper surface 20A of the second substrate 20.

[0038] According to the foregoing laser device 30 of this embodiment, it includes a laser source 31 and an optical component 32, and the laser emitted by the laser source 31 is converted into a planar laser 35 by the optical component 32. The optical component 32 is, for example but not limited to, a diffractive optical component, and / or a refractive optical component, and / or a reflective optical component. In addition, the foregoing laser device 30 has a first laser divergence angle θ1 and a second laser divergence angle θ2, and the length of the planar laser 35 can be controlled by adjusting the angle size of the first laser divergence angle θ1, and the width of the planar laser 35 can be controlled by adjusting the angle size of the second laser divergence angle θ2. Among them, the angle of the first laser divergence angle θ1 is greater than or equal to one degree; the angle of the second laser divergence angle θ2 is greater than or equal to one degree.

[0039] Embodiment Three First, please refer to Figure 3A . As Figure 3A shown, a first substrate 100 is provided. The aforementioned first substrate 100 has opposite first upper surface 100A and first lower surface 100B. The first upper surface 100A has a plurality of electronic components 120, and the aforementioned plurality of electronic components 120 are arranged along a first direction and a second direction respectively, forming a first electronic component array 150 formed by arranging M rows of electronic components multiplied by N columns of electronic components, where both M and N are natural numbers greater than 1. The aforementioned plurality of electronic components 120 are selected from a group consisting of, for example but not limited to, one or more of light-emitting diodes, laser diodes, and semiconductor components, and the aforementioned semiconductor components are selected from a group consisting of, for example but not limited to, one of a processor, a memory IC, a micro-component IC, a logic IC, and an analog IC.

[0040] As Figure 3A shown, the first electronic component array 150 of this Embodiment Three is formed by arranging 8 rows of a plurality of electronic components 120 arranged along the X-axis direction and 5 columns of a plurality of electronic components 120 arranged along the Y-axis direction, that is, M = 8, N = 5, the first direction is the X-axis direction, and the second direction is the Y-axis direction. However, according to other embodiments of the present invention, M and N can also be other natural numbers greater than 1 respectively, and the first and second directions can also be changed to other set directions as needed.

[0041] Secondly, please refer to Figure 3B . As Figure 3B shown, a second substrate 200 is provided, and the aforementioned second substrate 200 is disposed below the aforementioned first substrate 100. The second substrate 200 has opposite second upper surface 200A and second lower surface 200B, and the first upper surface 100A faces the second upper surface 200A. The aforementioned second substrate 200 is, for example but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0042] Next, please refer to Figures 3C to 3F . As Figures 3C to 3EAs shown, a laser device 300 is provided. The aforementioned laser device 300 can emit a planar laser 350 on the aforementioned first substrate 100, and cause the aforementioned planar laser 350 to sequentially irradiate one row or adjacent rows in the aforementioned first electronic component array 150 along the aforementioned first axis direction, or cause the aforementioned planar laser 350 to sequentially irradiate one column or adjacent columns in the aforementioned first electronic component array 150 along the aforementioned second axis direction, and cause the aforementioned multiple electronic components 120 irradiated by the aforementioned planar laser 350 to be sequentially peeled off from the first upper surface 100A of the aforementioned first substrate 100 and bonded to the second upper surface 200A of the aforementioned second substrate 200. After all the aforementioned multiple electronic components 120 in the aforementioned first electronic component array 150 are sequentially peeled off from the first upper surface 100A of the aforementioned first substrate 100 and bonded to the second upper surface 200A of the aforementioned second substrate 200, it can be as Figure 3F shown to form a second electronic component array 250 formed by arranging M rows of electronic components multiplied by N columns of electronic components on the second upper surface 200A of the aforementioned second substrate 200.

[0043] According to this embodiment, the aforementioned laser device 300 includes a laser source 310 and an optical component 320, and the laser emitted by the aforementioned laser source 310 is converted into a planar laser 350 by the aforementioned optical component 320. The aforementioned optical component 320 is, for example but not limited to, a diffractive optical component, and / or a refractive optical component, and / or a reflective optical component. In addition, the aforementioned laser device 300 has a first laser divergence angle θ1 and a second laser divergence angle θ2, and the length of the aforementioned planar laser 35 can be controlled by adjusting the angle size of the aforementioned first laser divergence angle θ1, and the width of the aforementioned planar laser 350 can be controlled by adjusting the angle size of the aforementioned second laser divergence angle θ2. Among them, the angle of the aforementioned first laser divergence angle θ1 is greater than or equal to one degree; the angle of the aforementioned second laser divergence angle θ2 is greater than or equal to one degree.

[0044] As Figures 3C to 3EAs shown, in the third embodiment, an example is given where the surface-shaped laser 350 sequentially irradiates the multiple electronic components 120 in the 1st row, 2nd row, …, 8th row of the first electronic component array 150 along the X-axis direction. This is not intended to limit the scope of the patent. The multiple electronic components 120 in the 1st row, 2nd row, …, 8th row are sequentially peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200, that is, P = 1, 2, …, 8. However, according to other embodiments of the present invention, the surface-shaped laser 350 may also be selected to sequentially irradiate the multiple electronic components 120 in the 1st column, 2nd column, …, 5th column of the first electronic component array 150 along the Y-axis direction, and the multiple electronic components 120 in the 1st column, 2nd column, …, 5th column are sequentially peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200, that is, Q = 1, 2, …, 5.

[0045] Finally, please refer to Figure 3F . As Figure 3F shown, after all the multiple electronic components 120 in the first electronic component array 150 are sequentially peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200, a second electronic component array 250 formed by arranging 8 rows of electronic components multiplied by 5 columns of electronic components can be formed on the second upper surface 200A of the second substrate 200 as shown in Figure 3F .

[0046] Embodiment Four First, please refer to Figure 4A . As Figure 4A shown, a first substrate 100 is provided. The first substrate 100 has opposite first upper surface 100A and first lower surface 100B. The first upper surface 100A has multiple electronic components 120, and the multiple electronic components 120 are respectively arranged along a first direction and a second direction to form a first electronic component array 150 formed by arranging M rows of electronic components multiplied by N columns of electronic components, where M and N are both natural numbers greater than 1. The multiple electronic components 120 are selected from a group consisting of, for example but not limited to, one or more of light-emitting diodes, laser diodes, and semiconductor components, and the semiconductor components are selected from a group consisting of, for example but not limited to, one of a processor, memory IC, micro-component IC, logic IC, and analog IC.

[0047] As Figure 4AAs shown, the first electronic component array 150 of the third embodiment is formed by arranging multiple electronic components 120 in 8 rows along the X-axis direction and multiple electronic components 120 in 5 columns along the Y-axis direction, that is, M = 8, N = 5, the first direction is the X-axis direction, and the second direction is the Y-axis direction. However, according to other embodiments of the present invention, M and N can also be other natural numbers greater than 1 respectively, and the first and second directions can also be changed to other set directions as needed.

[0048] Secondly, please refer to Figure 4B . As Figure 4B shown, a second substrate 200 is provided, and the second substrate 200 is disposed below the first substrate 100. The second substrate 200 has opposite second upper surface 200A and second lower surface 200B, and the first upper surface 100A faces the second upper surface 200A. The second substrate 200 is, for example but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0049] Next, please refer to Figures 4C to 4F . As Figures 4C to 4E shown, a laser device 300 is provided. The laser device 300 can emit a planar laser 350 on the first substrate 100. The planar laser 350 includes a preheating area 350A and a welding area 350B. The planar laser 350 irradiates one row or adjacent rows in the first electronic component array 150 with the preheating area 350A and the welding area 350B in sequence along the first axis direction, or the planar laser 350 irradiates one column or adjacent columns in the first electronic component array 150 with the preheating area 350A and the welding area 350B in sequence along the second axis direction, and all of the multiple electronic components 120 irradiated by the planar laser 350 are sequentially peeled off from the first upper surface 100A of the first substrate 100 and are joined to the second upper surface 200A of the second substrate 200 as Figure 4F shown.

[0050] According to this embodiment, the aforementioned laser device 300 includes a laser source 310 and an optical component 320, and the laser emitted by the aforementioned laser source 310 is converted into a shaped laser 350 by the aforementioned optical component 320. The aforementioned optical component 320 is, for example but not limited to, a diffractive optical component, and / or a refractive optical component, and / or a reflective optical component. In addition, the aforementioned laser device 300 has a first laser divergence angle θ1 and a second laser divergence angle θ2, and the length of the aforementioned shaped laser 350 can be controlled by adjusting the angle of the aforementioned first laser divergence angle θ1, and the width of the aforementioned shaped laser 350 can be controlled by adjusting the angle of the aforementioned second laser divergence angle θ2. Among them, the angle of the aforementioned first laser divergence angle θ1 is greater than or equal to one degree; the angle of the aforementioned second laser divergence angle θ2 is greater than or equal to one degree.

[0051] As Figures 4C to 4E shown, in the fourth embodiment, the aforementioned shaped laser 350 irradiates the aforementioned multiple electronic components 120 in the first row, the second row,... the eighth row of the aforementioned first electronic component array 150 in sequence along the aforementioned first axis direction with the aforementioned preheating area 350A and the aforementioned welding area 350B as an example for illustration, and is not intended to limit the scope of its patent. And the aforementioned multiple electronic components 120 in the aforementioned first row, the second row,... the eighth row are sequentially peeled off from the first upper surface 100A of the aforementioned first substrate 100 and bonded to the second upper surface 200A of the aforementioned second substrate 200, that is, P = 1, 2,..., 8. However, according to other embodiments of the present invention, the aforementioned shaped laser 350 irradiates the aforementioned multiple electronic components 120 in the first column, the second column,... the fifth column of the aforementioned first electronic component array 150 in sequence along the aforementioned second axis direction with the aforementioned preheating area 350A and the aforementioned welding area 350B, and the aforementioned multiple electronic components 120 in the aforementioned first column, the second column,... the fifth column are sequentially peeled off from the first upper surface 100A of the aforementioned first substrate 100 and bonded to the second upper surface 200A of the aforementioned second substrate 200, that is, Q = 1, 2,..., 5.

[0052] According to other embodiments of the present invention, the aforementioned shaped laser 350 can also be selected to irradiate adjacent rows in the aforementioned first electronic component array 150 in sequence along the aforementioned first axis direction with the aforementioned preheating area 350A and the aforementioned welding area 350B, or the aforementioned shaped laser 350 is selected to irradiate adjacent columns in the aforementioned first electronic component array 150 in sequence along the aforementioned second axis direction with the aforementioned preheating area 350A and the aforementioned welding area 350B, and the aforementioned multiple electronic components 120 irradiated by the aforementioned shaped laser 350 are sequentially peeled off from the first upper surface 100A of the aforementioned first substrate 100, and as Figure 4F shown, they are bonded to the second upper surface 200A of the aforementioned second substrate 200.

[0053] Finally, please refer to Figure 4F . As Figure 4F shown, after all of the plurality of electronic components 120 in the first electronic component array 150 are sequentially peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200, a second electronic component array 250 formed by arranging 8 rows of electronic components multiplied by 5 columns of electronic components can be formed on the second upper surface 200A of the second substrate 200 as Figure 4F shown.

[0054] Although the present invention has been disclosed as above by way of embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to that defined by the appended claims.

Claims

1. A bonding method for electronic components, characterized in that Comprising the following steps: Providing a first substrate having opposite first upper and first lower surfaces, wherein a plurality of electronic components are provided on the first upper surface of the first substrate, and the plurality of electronic components are spaced apart from each other and arranged in a row or a column; Providing a second substrate and disposing the second substrate below the first substrate, the second substrate having opposite second upper and second lower surfaces, and the first upper surface facing the second upper surface; and Providing a laser device that can emit a planar laser on the first substrate, and causing the planar laser to irradiate the plurality of electronic components arranged in a row or a column on the first upper surface of the first substrate, and causing the plurality of electronic components to be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

2. The method for bonding electronic components according to claim 1, wherein the plurality of electronic components are selected from a group consisting of one or more of a light-emitting diode, a laser diode, and a semiconductor component.

3. The method for bonding electronic components according to claim 2, wherein the semiconductor component is selected from a group consisting of a processor, a memory IC, a micro-component IC, a logic IC, and an analog IC.

4. The method for bonding electronic components according to claim 1, wherein the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

5. The method for bonding electronic components according to claim 1, wherein the laser device has a first laser divergence angle θ1 and a second laser divergence angle θ2, and the length of the planar laser can be controlled by adjusting the angle of the first laser divergence angle θ1, and the width of the planar laser can be controlled by adjusting the angle of the second laser divergence angle θ2.

6. The bonding method of electronic components according to claim 5, wherein, The angle of the first laser divergence angle θ1 is greater than or equal to one degree, and the angle of the second laser divergence angle θ2 is greater than or equal to one degree.

7. The method for bonding electronic components according to claim 1, wherein the planar laser includes a preheating zone and a welding zone, and the planar laser irradiates the plurality of electronic components arranged in a row or a column on the first upper surface of the first substrate in sequence with the preheating zone and the welding zone, and causes the plurality of electronic components to be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

8. The method for bonding electronic components according to any one of claims 1 to 7, wherein the laser device includes a laser source and an optical component, and the laser emitted by the laser source is converted into a planar laser by the optical component.

9. The method for bonding electronic components according to claim 8, wherein the optical component is a diffractive optical component, and / or a refractive optical component, and / or a reflective optical component.

10. A method for transferring a large number of electronic components, characterized in that Comprising the following steps: Provide a first substrate having opposite first upper and lower surfaces, wherein the first upper surface of the first substrate has a plurality of electronic components, and the plurality of electronic components are arranged along a first axis direction and a second axis direction respectively to form a first electronic component array formed by arranging M rows of electronic components multiplied by N columns of electronic components, where M and N are natural numbers greater than 1; Provide a second substrate and dispose the second substrate below the first substrate. The second substrate has opposite second upper and lower surfaces, and the first upper surface faces the second upper surface; and Provide a laser device that can emit a planar laser on the first substrate and cause the planar laser to sequentially irradiate one row or adjacent rows in the first electronic component array along the first axis direction, or cause the planar laser to sequentially irradiate one column or adjacent columns in the first electronic component array along the second axis direction, and cause the plurality of electronic components irradiated by the planar laser to be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate. After all the plurality of electronic components in the first electronic component array are sequentially peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate, a second electronic component array formed by arranging M rows of electronic components multiplied by N columns of electronic components can be formed on the second upper surface of the second substrate.

11. The method for massively transferring electronic components according to claim 10, wherein the plurality of electronic components are selected from a group consisting of one or more of light-emitting diodes, laser diodes, and semiconductor components.

12. The method for massively transferring electronic components according to claim 11, wherein the semiconductor component is selected from a group consisting of a processor, a memory IC, a micro-component IC, a logic IC, and an analog IC.

13. The method for massively transferring electronic components according to claim 10, wherein the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

14. The method for massively transferring electronic components according to claim 1, wherein the laser device has a first laser divergence angle θ1 and a second laser divergence angle θ2, and the length of the planar laser can be controlled by adjusting the angle of the first laser divergence angle θ1, and the width of the planar laser can be controlled by adjusting the angle of the second laser divergence angle θ2.

15. The method for transferring a large number of electronic components as claimed in claim 14, wherein, The angle of the first laser divergence angle θ1 is greater than or equal to one degree.

16. The method for a large-scale transfer of electronic components according to claim 14, wherein, The angle of the second laser divergence angle θ2 is greater than or equal to one degree.

17. The method for transferring a large number of electronic components as claimed in claim 10, wherein the surface-shaped laser includes a preheating zone and a welding zone, and the surface-shaped laser irradiates one row or adjacent rows in the first electronic component array with the preheating zone and the welding zone in sequence along the first axis direction, or the surface-shaped laser irradiates one column or adjacent columns in the first electronic component array with the preheating zone and the welding zone in sequence along the second axis direction, and the plurality of electronic components irradiated by the surface-shaped laser are peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

18. The method for transferring a large number of electronic components as claimed in any one of claims 10 to 17, wherein the laser device includes a laser source and an optical component, and the laser emitted by the laser source is converted into a surface-shaped laser by the optical component.

19. The method for transferring a large number of electronic components as claimed in claim 18, wherein the optical component is a diffractive optical component, and / or a refractive optical component, and / or a reflective optical component.

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