Apparatus and method for implementing silicon carbide (SiC) surface mount device

Abstract

In some aspects, a device includes a substrate, a first metallization disposed on the substrate, a second metallization disposed on the substrate, a circuit disposed on the substrate and electrically connected to the first metallization and the second metallization. The first metallization and the second metallization are configured, constructed and arranged to be solder connected to the device, wherein the substrate may include silicon carbide (SiC).

Description

[0001] Citation of Related Applications

[0002] This application claims the benefit of U.S. Application No. 17 / 951,523, filed on September 23, 2022, the entire disclosure of which is incorporated herein by reference for all purposes as if fully set forth herein. Technical Field

[0003] The present disclosure relates to silicon carbide (SiC) surface mount devices. The present disclosure also relates to methods for implementing silicon carbide (SiC) surface mount devices. The present disclosure relates to apparatuses for implementing silicon carbide (SiC) surface mount devices. The present invention further relates to methods for implementing apparatuses for implementing silicon carbide (SiC) surface mount devices. Background Art

[0004] Typically, SiC-based components are attached to metal surfaces using epoxy materials, silver (Ag) materials, gold-tin (AuSn) materials, other dispensed attachment materials, etc. For example, epoxy materials, Ag sintering materials, pre-attached AuSn material backside materials, other dispensed attachment materials, etc. are typically used to attach SiC-based components to the metal flanges of devices. These materials generally require large dispensing nozzles in order to dispense the materials at desired locations. However, large dispensing nozzles require a larger dispensing area and thus require larger components.

[0005] Accordingly, for smaller form factor SiC-based components, it is not easy to implement the use of dispensed materials such as epoxy materials, which increases the cost of the device. In addition, the use of dispensed materials such as epoxy materials requires a curing temperature that can be as high as 400°C. This relatively high curing temperature reduces device reliability, device ruggedness, increases device cost, etc.

[0006] In addition, the use of dispensed materials such as epoxy materials requires more precise placement of SiC-based components. In this regard, the SiC-based components must be placed in precise positions prior to curing, which increases the cost of the device and the manufacturing time.

[0007] Accordingly, what is needed are SiC-based components configured to achieve improved attachment and improved attachment methods that reduce cost, manufacturing time, etc. Summary of the Invention

[0008] In one general aspect, a silicon carbide surface mount device includes: a substrate; a first metallization disposed on the substrate; a second metallization disposed on the substrate; a circuit disposed on the substrate and electrically connected to the first metallization and the second metallization; and the first metallization and the second metallization are configured, constructed, and arranged to make a solder connection to a device. Additionally, the silicon carbide surface mount device includes the case where the substrate may include silicon carbide (SiC).

[0009] In one general aspect, a method includes: providing a substrate; disposing a first metallization on the substrate; disposing a second metallization on the substrate; disposing a circuit electrically connected to the first metallization and the second metallization; and reflowing solder to connect the first metallization and the second metallization to a device. Additionally, the method includes the case where the substrate may include silicon carbide (SiC).

[0010] Additional features, advantages, and aspects of the present disclosure may be elaborated or made clear by considering the following detailed description, the drawings, and the claims. Additionally, it should be understood that the foregoing summary and the following detailed description of the present disclosure are exemplary and are intended to provide further explanation without limiting the scope of the present disclosure as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the present disclosure and show many aspects of the present disclosure and, together with the detailed description, are used to explain the principles of the present disclosure. No attempt is made to show the structural details of the present disclosure in more detail than is necessary for a fundamental understanding and for practicing the various ways of the present disclosure. In the drawings:

[0012] Figure 1 A cross-sectional side view of a SiC SMD component according to the present disclosure is shown.

[0013] Figure 2 A top view of a SiC SMD according to Figure 1 is shown.

[0014] Figure 3 A cross-sectional side view of a device implementing a SiC SMD component according to the present disclosure is shown.

[0015] Figure 4 A top view of a device implementing a SiC SMD according to Figure 3 is shown.

[0016] Figure 5 A top view of a device implementing a SiC SMD according to Figure 3 is shown in more detail.

[0017] Figure 6A photograph of a top view of at least one SiC SMD component according to aspects of the present disclosure.

[0018] Figure 7 is according to Figure 6 A photograph of a bottom view of at least one SiC SMD component.

[0019] Figure 8 A photograph of a top view of at least one SiC SMD component and a device before solder reflow according to aspects of the present disclosure.

[0020] Figure 9 is according to Figure 8 A photograph of a three-dimensional top view of at least one SiC SMD component and a device before solder reflow.

[0021] Figure 10 A photograph of a top view of at least one SiC SMD component and a device after solder reflow according to aspects of the present disclosure.

[0022] Figure 11 is according to Figure 10 A photograph of a three-dimensional top view of at least one SiC SMD component and a device after solder reflow.

[0023] Figure 12 Shows a cross-sectional side view of a SiC SMD component according to the present disclosure.

[0024] Figure 13 Shows the implementation according to Figure 12 A cross-sectional side view of a device for a SiC SMD component.

[0025] Figure 14 Shows a method for implementing at least one SiC SMD component according to the present disclosure.

[0026] Figure 15 Shows the formation of a device according to the present disclosure. Detailed Description

[0027] With reference to the non-limiting aspects and embodiments described and / or shown in the accompanying drawings and detailed in the following description, many aspects of the present disclosure and their various features and advantageous details are more fully explained. It should be noted that the features shown in the drawings are not necessarily drawn to scale, and as will be recognized by those skilled in the art, the features of one aspect may be used with other aspects even if not explicitly stated herein. Descriptions of well-known components and processing techniques may be omitted so as not to unnecessarily obscure many aspects of the present disclosure. The embodiments used herein are only intended to facilitate an understanding of the ways in which the present disclosure may be practiced and further enable those skilled in the art to practice many aspects of the present disclosure. Therefore, the embodiments and aspects herein should not be construed as limiting the scope of the present disclosure which is defined only by the appended claims and applicable law. Additionally, it should be noted that throughout the various views of the drawings and in the different embodiments disclosed, like reference numerals represent like components.

[0028] It should be understood that although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of the present disclosure, a first element may be termed a second element, and similarly, a second element may be termed a first element. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0029] It should be understood that when an element such as a layer, region, or substrate is referred to as being "on" or extending "onto" another element, the element can be directly on or directly extend onto the other element, or there can also be intervening elements. In contrast, when an element is referred to as being "directly on" or "directly extending onto" another element, there are no intervening elements. Similarly, it should be understood that when an element such as a layer, region, or substrate is referred to as being "above" or extending "above" another element, the element can be directly above or directly extend above the other element, or there can also be intervening elements. In contrast, when an element is referred to as being "directly above" or "directly extending above" another element, there are no intervening elements. It should also be understood that when an element is referred to as being "connected" or "coupled" to another element, the element can be directly connected or coupled to the other element, or there can be intervening elements. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements.

[0030] In this document, relative terms such as "below" or "above" or "upper" or "lower" or "horizontal" or "vertical" may be used to describe the relationship of one element, layer or region to another element, layer or region, as shown in the figures. It should be understood that these terms and those discussed above are intended to cover different orientations of the device other than the orientations depicted in the figures.

[0031] The terms used in this document are for the purpose of describing particular aspects only and are not intended to limit the disclosure. As used herein, unless the context clearly dictates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms as well. It should be further understood that when used in this document, the terms "comprises", "comprising", "includes" and / or "including" specify the presence of the stated features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0032] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It should be further understood that the terms used herein should be interpreted as having a meaning consistent with their meaning in the context of this specification and the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0033] Many aspects of the present disclosure relate to SiC components and / or devices on SiC substrates. The SiC components and / or devices on SiC substrates can be implemented as capacitors, spiral inductors, transmission lines, etc. The SiC components and / or devices on SiC substrates can include a patterned bottom-side metallization that can be attached to a support such as a PCB (printed circuit board) using standard solder reflow methods and equipment. As opposed to epoxy attachment methods or other dispensed attachment materials that require large dispensing nozzles, larger dispensing areas, and larger components.

[0034] Many aspects of the disclosed SiC components and / or devices on an SiC substrate can utilize a solder reflow method to attach these smaller components with greater accuracy. Many aspects of the disclosed SiC components and / or devices on an SiC substrate can utilize the self-aligning nature of the solder reflow method. Additionally, many aspects of the disclosed SiC components and / or devices on an SiC substrate can utilize the self-aligning nature of the solder reflow method, which can be combined with a properly designed solder mask (on a support such as a PCB), which can allow for more accurate attachment placement of the disclosed SiC components and / or devices on an SiC substrate, smaller placement tolerances for the disclosed SiC components and / or devices on an SiC substrate, etc.

[0035] Furthermore, the lower temperature profile of solder reflow (which can be about 260 °C) is less demanding on the SiC components and / or devices on an SiC substrate. Thus, compared to epoxy attachment that may require a curing temperature of up to 400 °C, embodiments of the disclosed SiC components and / or devices on an SiC substrate improve attachment device reliability, device robustness, device assembly cost, etc.

[0036] Currently, SiC-based components are attached to the metal flange of a packaged RF device using epoxy materials, Ag sintering materials, pre-attached AuSn backside materials, etc. On the other hand, the present disclosure relates to SiC components that can be attached to a support (such as a PCB), which can have routed transmission lines, vias, solder masks, etc. Solder can be applied to a large PCB panel or other support using a screen printing method, a stencil method, etc., and multiple SiC components can be placed and reflowed simultaneously. Thus, compared to having to sequentially dispense epoxy for each component attachment, multiple components are attached, for example, in a batch manner. This reduces assembly time and cost.

[0037] Many aspects of the SiC component can have a patterned bottom-side metallization. In many aspects, the patterned bottom-side metallization can mimic and / or form leads consistent with a typical ceramic surface-mount device (SMD). The disclosed SiC components can be designed, configured, implemented, etc., to replicate standard SMD component dimensions. For example, SMD package type 0603 (dimensions (mm) - 1.5 x 0.8), SMD package type 0402 (dimensions (mm) - 1.0 x 0.5), SMD package type 0201 (dimensions (mm) - 0.6 x 0.3), etc., including SMD package type 2920, SMD package type 2512, SMD package type 2010, SMD package type 1825, SMD package type 1812, SMD package type 1806, SMD package type 1210, SMD package type 1206, SMD package type 0805, SMD package type 01005, etc. Thus, the disclosed SiC components provide high-temperature capabilities, high-voltage capabilities, low-loss capabilities, high-Q capabilities, and / or similar alternatives for standard SMDs. Additionally, as needed, the disclosed SiC components can also be designed to any custom size, aspect ratio, footprint, etc.

[0038] Many aspects of the SiC component can be configured as surface-mount SiC devices, such as surface-mount SiC devices disposed on a SiC substrate, which can be attached to a substrate (such as a PCB) using a solder reflow method instead of epoxy resin, etc.

[0039] Many aspects of the SiC component can be configured with a patterned bottom side, which can be configured in the dimensions and / or form factor of a standard SMD cell, but the dimensions of the SiC component can also be customized for any size / aspect ratio or footprint.

[0040] Many aspects of the SiC component can be configured to use a solder reflow method for attachment instead of epoxy resin. In this regard, the SiC component overcomes some of the problems of attaching small-sized and / or high-aspect-ratio SMDs. The lower temperature budget of solder reflow (compared to epoxy resin curing) also has reliability and cost advantages.

[0041] Many aspects of the SiC component can be configured to self-align and center the SIC SMD during the attachment process using a solder mask profile.

[0042] Many aspects of the SiC component can be configured to provide improved alternatives. In this regard, many aspects of the SiC component can be configured for higher power handling, better reliability, better thermals, etc. And, many aspects of the SiC component can be configured as standard-profile SMDs, such as the SMD package types described herein.

[0043] Many aspects of the SiC component can be configured to attach SMD components on a PCB using existing tools and knowledge. However, the existing tools and knowledge are applicable to SiC components on a PCB.

[0044] Many aspects of the SiC component can be implemented using tools for placing typical SMD components on a PCB, which can be reconfigured to pick up SiC components from a wafer frame and attach them on the PCB.

[0045] Many aspects of the SiC component can be configured to be placed using the bottom pads contacting the PCB. Many aspects of the SiC component can be configured to be flip-chipped such that the top pads contact the PCB.

[0046] Many aspects of the SiC component can be configured to use a solder reflow method, which can be capable of handling smaller form factor SIC IPDs compared to existing epoxy attachment methods.

[0047] Many aspects of the SiC component can advantageously utilize a lower temperature profile of solder reflow that can be less than 260°C. This can be beneficial compared to an epoxy curing temperature that can be up to 400°C. Thus, the disclosed SiC component can be configured for better reliability, ruggedness, cost, etc. In this regard, embodiments using reflow solder are cleaner, simpler, lower cost, etc. And, embodiments using reflow solder may not be as thermally well-behaved. However, this is not required for passive devices. In this regard, the surface tension of the solder tends towards the lowest state of surface tension, thus aligning the components. On the other hand, embodiments of epoxy are disadvantageous as the application is inaccurate and too large for embodiments using small SMD-type devices.

[0048] Many aspects of the SiC component can be configured to be implemented in combination with a solder mask on the PCB, which can be used to self-align, center, etc. the SiC component and prevent solder from flowing over the bonding pads.

[0049] Many aspects of the SiC component can be configured to be implemented using other tools, equipment, knowledge, etc. known for SMD attachment on a PCB, which can be reapplied to attach SiC components to the PCB.

[0050] In many aspects, compared to typical multi-layer ceramic SMD components, SiC SMD components have better thermal handling, higher power handling, better reliability, lifespan, etc.

[0051] Many aspects of the SiC component can be configured to implement in any similar form factor, profile, etc. as the standardized SMD (such as the SMD package type described herein), which allows for the direct replacement of SiC SMD components on the PCB.

[0052] Figure 1 A cross-sectional side view of a SiC SMD component according to the present disclosure is shown.

[0053] Figure 2 Shown according to Figure 1 a top view of the SiC SMD.

[0054] Figure 1 and Figure 2 Many aspects of can include any one or more of the other features, components, arrangements, etc. described herein. Specifically, Figure 1 will Figure 1 At least one silicon carbide (SiC) surface mount device (SMD) component shown in is shown as at least one SiC SMD component 200. The at least one SiC SMD component 200 may include a substrate 204, a first top-side metallization 266, a second top-side metallization 268, a first bottom-side metallization 240, a second bottom-side metallization 242, etc. In addition, the at least one SiC SMD component 200 may include electrical connectors such as vias 228.

[0055] The first bottom-side metallization 240 and / or the second bottom-side metallization 242 of the at least one SiC SMD component 200 can be patterned on the at least one SiC SMD component 200 to replicate SMD-like leads. In this regard, the structure, arrangement, position, shape, etc. of the first bottom-side metallization 240 and / or the second bottom-side metallization 242 replicate SMD-like leads. Thus, the at least one SiC SMD component 200 can be configured to be implemented in place of a standard SMD type component.

[0056] Additionally, in many aspects, at least one SiC SMD component 200 may include a circuit 290. The circuit 290 may implement capacitors, inductors, spiral inductors, transmission lines, resistors, combinations thereof, etc. In this aspect, the circuit 290 may be connected and / or electrically connected to a first top-side metallization 266 of at least one SiC SMD component 200 and a second top-side metallization 268 of at least one SiC SMD component 200. In many aspects, the circuit 290 may include an arrangement of one or more metallizations, dielectric materials, etc. to implement capacitors, inductors, spiral inductors, transmission lines, resistors, combinations thereof, etc. The resistor of the circuit 290 may be defined by the width, length, and / or height of a metal portion implemented as part of the circuit 290. The resistor may additionally or alternatively be implemented as a thin-film resistor, thick-film resistor, printed thin-film resistor, printed thick-film resistor, etc. The inductor of the circuit 290 may be defined by the width, length, and / or height of a metal portion implemented as part of the circuit 290. The inductor may be implemented as a spiral. The spiral configuration of the inductor may be formed of metal. The capacitor of the circuit 290 may include a capacitor top plate, a capacitor bottom plate, and a dielectric layer may be disposed between the capacitor top plate and the capacitor bottom plate. An embodiment of the circuit 290 implemented as a capacitor is shown in Figure 12 and is described in further detail below.

[0057] In a specific aspect, the substrate 204 of at least one SiC SMD component 200 may include vias 228 extending through the substrate 204 along the y-axis. In many aspects, the y-axis may be a vertical axis. One or more vias 228 may be electrically connected to a first bottom-side metallization 240; and one or more vias 228 may be electrically connected to a second bottom-side metallization 242. Additionally, one or more vias 228 may be electrically connected to a first top-side metallization 266; and one or more vias 228 may be electrically connected to a second top-side metallization 268. However, any type of electrical connection is also contemplated.

[0058] The substrate 204 may include silicon carbide (SiC) and may be made of silicon carbide (SiC) or the like. In some aspects, the substrate 204 may be a semi-insulating SiC substrate, a p-type substrate, an n-type substrate, etc. In some aspects, the substrate 204 may be very lightly doped. In one aspect, the substrate 204 may be formed of SiC selected from the group consisting of 6H, 4H, 15R, 3C SiC, etc. In one aspect, the substrate 204 may be formed of SiC that may be semi-insulating and doped with vanadium or any other suitable dopant, or may be undoped, have high purity, and have defects that provide semi-insulating properties. In other aspects, the substrate 204 may include silicon, alumina, aluminum nitride (AlN), beryllium oxide (BeO), titanium oxide (TiO), metal oxide substrates, high-dielectric metal oxide substrates, high-dielectric substrates, thermally conductive high-dielectric materials / substrates, and / or other similar thermally conductive dielectric materials. The substrate 204 may include an upper surface 222. The upper surface 222 may support the first top-side metallization 266 and the second top-side metallization 268. In many aspects, the circuit 290 may be disposed on the upper surface 222 of at least one SiC SMD component 200.

[0059] The first top-side metallization 266 and the second top-side metallization 268 may be disposed on the upper surface 222 of the substrate 204. Specifically, one or more intermediate layers or structures (not shown) may exist between the upper surface 222 of the substrate 204 and the first top-side metallization 266; and one or more intermediate layers or structures (not shown) may exist between the upper surface 222 of the substrate 204 and the second top-side metallization 268. In other aspects, the first top-side metallization 266 may be disposed directly on the upper surface 222 of the substrate 204. In other aspects, the second top-side metallization 268 may be disposed directly on the upper surface 222 of the substrate 204. In one aspect, the first top-side metallization 266 and / or the second top-side metallization 268 may be continuous. In one aspect, the first top-side metallization 266 and / or the second top-side metallization 268 may be discontinuous or segmented. The first top-side metallization 266 and the second top-side metallization 268 may include metal materials such as copper, gold, nickel, palladium, silver, tin, gold-tin alloy, etc., and combinations thereof. In one aspect, the first bottom-side metallization 240 may have a thickness of 1 micron to 9 microns, 1 micron to 2 microns, 2 microns to 3 microns, 3 microns to 4 microns, 4 microns to 5 microns, 5 microns to 6 microns, 6 microns to 7 microns, 7 microns to 8 microns, or 8 microns to 9 microns along the y-axis.

[0060] The circuit 290 can be disposed on the upper surface 222 of the substrate 204. Specifically, one or more intermediate layers or structures (not shown) can exist between the upper surface 222 of the substrate 204 and the circuit 290. In other aspects, the circuit 290 can be directly disposed on the upper surface 222 of the substrate 204. The circuit 290 can partially include metallic materials such as copper, gold, nickel, palladium, silver, tin, gold-tin alloy, etc. and combinations thereof.

[0061] The substrate 204 can include a lower surface 224. At least one SiC SMD component 200 can include a first bottom-side metallization 240 and a second bottom-side metallization 242 located on the lower surface 224 of the substrate 204 opposite to and / or on the lower surface 224. The first bottom-side metallization 240 and the second bottom-side metallization 242 can be located in a plane generally parallel to the x-axis or a plane generally parallel to the upper surface 222. In many aspects, the x-axis can be a horizontal axis. In one aspect, the first bottom-side metallization 240 and / or the second bottom-side metallization 242 can be continuous. In one aspect, the first bottom-side metallization 240 and / or the second bottom-side metallization 242 can be discontinuous or segmented. The first bottom-side metallization 240 and the second bottom-side metallization 242 can include metallic materials such as copper, gold, nickel, palladium, silver, tin, gold-tin alloy, etc., and combinations thereof. In one aspect, the first bottom-side metallization 240 can have a thickness of 1 micron to 9 microns, 1 micron to 2 microns, 2 microns to 3 microns, 3 microns to 4 microns, 4 microns to 5 microns, 5 microns to 6 microns, 6 microns to 7 microns, 7 microns to 8 microns, or 8 microns to 9 microns along the y-axis.

[0062] The vias 228 can be metal-plated holes or metal-filled holes, which can serve as electrical channels through the substrate 204. The vias 228 can contain metallic materials such as copper, gold, nickel, palladium, silver, tin, gold-tin alloy, etc., and combinations thereof. The vias 228 can have an axis that can be located in a plane generally perpendicular to the x-axis, a plane generally parallel to the y-axis, and / or a plane generally perpendicular to the upper surface 222.

[0063] Figure 3 A cross-sectional side view of an apparatus implementing a SiC SMD component according to the present disclosure is shown.

[0064] Figure 4 A top view of an apparatus implementing a SiC SMD according to Figure 3 is shown.

[0065] Figure 5 A more detailed top view of an apparatus implementing a SiC SMD according to Figure 3 is shown.

[0066] Figure 3 , Figure 4 , and Figure 5 Many aspects of can include any one or more other features, components, arrangements, etc. described herein. Specifically, Figure 3 FIG. shows an apparatus 300 for implementing at least one SiC SMD component 200. The apparatus 300 may include a substrate 304, a first top metal 366, a second top metal 368, a metallization layer 340, etc. In addition, the apparatus 300 may include a first solder part 390, a second solder part 392, a first solder mask 394, and a second solder mask 396.

[0067] As Figure 3 shown, the first solder mask 394 can be disposed on the apparatus 300. Specifically, the first solder mask 394 can be disposed on the upper surface 322 of the apparatus 300. In many aspects, the first solder mask 394 can be disposed on the first top metal 366 of the apparatus 300. In addition, the first solder mask 394 can be disposed adjacent to at least one SiC SMD component 200 along the x-axis. In many aspects, the first solder mask 394 can be disposed adjacent to the first bottom-side metallization 240 of at least one SiC SMD component 200 along the x-axis; and the first solder mask 394 can be disposed adjacent to the first top-side metallization 266 of at least one SiC SMD component 200 along the x-axis.

[0068] As Figure 3 further shown in, the second solder mask 396 can be disposed on the apparatus 300. Specifically, the second solder mask 396 can be disposed on the upper surface 322 of the apparatus 300. In many aspects, the second solder mask 396 can be disposed on the second top metal 368 of the apparatus 300. Further, the second solder mask 396 can be disposed adjacent to at least one SiC SMD component 200 along the x-axis. In many aspects, the second solder mask 396 can be disposed adjacent to the second bottom-side metallization 242 of at least one SiC SMD component 200 along the x-axis; and the first solder mask 394 can be disposed adjacent to the second top-side metallization 268 of at least one SiC SMD component 200 along the x-axis.

[0069] The substrate 304 may include an upper surface 322. The upper surface 322 may support a first top metal 366 and a second top metal 368. The substrate 304 may be implemented as a printed circuit board (PCB), printed wiring board (PWB), printed circuit board assembly (PCBA), a medium for connecting electronic components to each other in a controlled manner, and the like. In many aspects, the substrate 304 may be implemented as a laminated sandwich structure of one or more conductive layers and insulating layers. In many aspects, the substrate 304 may include one or more conductive layers, traces, planes, and the like. In many aspects, the substrate 304 may be etched from one or more copper sheet layers on and / or between sheets laminated to a non-conductive substrate. In many aspects, the substrate 304 may be configured such that at least one SiC SMD component 200 and / or other electrical components may be fixed to the first top metal 366, the second top metal 368, and / or other conductive pads on the outer layer of the substrate 304. In many aspects, the substrate 304 may include plated-through holes that allow for interlayer interconnection.

[0070] At least one SiC SMD component 200 may be attached to the substrate 304 using a first solder portion 390 and / or a second solder portion 392. The solder of the first solder portion 390 and / or the second solder portion 392 may be "walled" or "fenced" by a first solder mask 394 and / or a second solder mask 396.

[0071] The metallization of the first bottom-side metallization 240 and / or the second bottom-side metallization 242 of at least one SiC SMD component 200 may be patterned on at least one SiC SMD component 200 to replicate SMD-like leads. In addition, the metallization of the first top metal 366 and / or the second top metal 368 of the device 300 may be connected to the metallization of the first bottom-side metallization 240 and / or the second bottom-side metallization 242 of at least one SiC SMD component 200 using the first solder portion 390 and the second solder portion 392.

[0072] In many aspects, the metallization of the first top metal 366 of the device 300 may be connected to the metallization of the first bottom-side metallization 240 using the first solder portion 390. In many aspects, the metallization of the second top metal 368 of the device 300 may be connected to the metallization of the second bottom-side metallization 242 of at least one SiC SMD component 200 using the second solder portion 392.

[0073] Additionally, via 228 can be utilized to connect the metallization of the first top-side metallization 266 and / or the second top-side metallization 268 of at least one SiC SMD component 200 to the metallization of the first bottom-side metallization 240 and / or the second bottom-side metallization 242 of at least one SiC SMD component 200.

[0074] Figure 4 A top view of an embodiment showing a combined number of at least one SiC SMD component 200 on substrate 304 of device 300 is shown. And, Figure 4 It is shown how a solder mask and associated solder mask openings can be used to direct the placement of solder including a first solder portion 390 and a second solder portion 392, and to contain the reflowed solder such that at least one SiC SMD component 200 can self-align to a more precise intended placement location on substrate 304 of device 300.

[0075] See Figure 3 , the first top metal 366 and the second top metal 368 can be arranged on the upper surface 322 of substrate 304. Specifically, one or more intermediate layers or structures (not shown) can exist between the upper surface 322 of substrate 304 and the first top metal 366; and one or more intermediate layers or structures (not shown) can exist between the upper surface 322 of substrate 304 and the second top metal 368. In other aspects, the first top metal 366 can be directly arranged on the upper surface 322 of substrate 304. In other aspects, the second top metal 368 can be directly arranged on the upper surface 322 of substrate 304. In one aspect, the first top metal 366 and / or the second top metal 368 can be continuous. In one aspect, the first top metal 366 and / or the second top metal 368 can be discontinuous or segmented.

[0076] Substrate 304 can include a lower surface 324. Device 300 can include a metallization layer 340 on the lower surface 324 and / or the lower surface 324 of substrate 304 that is opposite to the upper surface 322. The metallization layer 340 can be in a plane generally parallel to the x-axis or a plane generally parallel to the upper surface 322. In one aspect, the metallization layer 340 can be continuous. In one aspect, the metallization layer 340 can be discontinuous or segmented. The metallization layer 340 can include a metallic material such as copper, gold, nickel, palladium, silver, tin, gold-tin alloy, etc. and combinations thereof. In one aspect, the metallization layer 340 can have a thickness of 1 micron to 9 microns, 1 micron to 2 microns, 2 microns to 3 microns, 3 microns to 4 microns, 4 microns to 5 microns, 5 microns to 6 microns, 6 microns to 7 microns, 7 microns to 8 microns, or 8 microns to 9 microns along the y-axis.

[0077] In many respects, the substrate 304 can be implemented as a PCB with a single-sided configuration having one copper layer. In many respects, the substrate 304 can be implemented as a PCB with a double-sided configuration having two copper layers on both sides of a substrate layer. In many respects, the substrate 304 can be implemented as a PCB with a multi-layer configuration having outer and inner layers of copper alternating with the layers of the substrate. In many respects, the substrate 304 can be implemented with a surface having a coating that protects the copper from corrosion and reduces the chance of solder short circuits between traces or unwanted electrical contact with stray bare wires. In many respects, the substrate 304 can be implemented with FR-4 glass epoxy, cotton paper impregnated with phenolic resin, etc. In many respects, the substrate 304 can be implemented with FR-2 (phenolic cotton paper), FR-3 (cotton paper and epoxy resin), FR-4 (woven glass and epoxy resin), FR-5 (woven glass and epoxy resin), FR-6 (mat glass and polyester), G-10 (woven glass and epoxy resin), CEM-1 (cotton paper and epoxy resin), CEM-2 (cotton paper and epoxy resin), CEM-3 (non-woven glass and epoxy resin), CEM-4 (woven glass and epoxy resin), CEM-5 (woven glass and polyester).

[0078] As Figure 5 shown, a first solder mask 394 can be disposed along the x-axis and the z-axis on a first top metal 366 of the device 300 adjacent to at least one SiC SMD component 200. In many respects, the first solder mask 394 can be disposed along the x-axis and the z-axis adjacent to a first top-side metallization 266 of at least one SiC SMD component 200. In a specific aspect, the first solder mask 394 can be disposed in a first portion along the x-axis adjacent to the first top-side metallization 266 of at least one SiC SMD component 200, the first solder mask 394 can be disposed in a second portion along the z-axis adjacent to the first top-side metallization 266 of at least one SiC SMD component 200, and the first solder mask 394 can be disposed in a third portion along the x-axis adjacent to the first top-side metallization 266 of at least one SiC SMD component 200.

[0079] In many aspects, a first portion of the first solder mask 394 can be connected to a second portion of the first solder mask 394; and the second portion of the first solder mask 394 can be connected to a third portion of the first solder mask 394. In many aspects, the first portion, the second portion, and the third portion of the first solder mask 394 can form a U shape on a first top metal 366 of a first top metallization 266 that partially surrounds at least one SiC SMD component 200. In many aspects, the first portion, the second portion, and the third portion of the first solder mask 394 can form a U shape on the first top metal 366 that partially surrounds three sides of at least one SiC SMD component 200.

[0080] As further shown in Figure 5 a first solder portion 390 can be disposed on a first top metal 366 of the device 300 adjacent to at least one SiC SMD component 200 along the x-axis and the z-axis. In many aspects, the first solder portion 390 can be disposed adjacent to a first top metallization 266 of at least one SiC SMD component 200 along the x-axis and the z-axis. In a specific aspect, the first solder portion 390 can be disposed in a first portion along the x-axis adjacent to the first top metallization 266 of at least one SiC SMD component 200, the first solder portion 390 can be disposed in a second portion along the z-axis adjacent to the first top metallization 266 of at least one SiC SMD component 200, and the first solder portion 390 can be disposed in a third portion along the x-axis adjacent to the first top metallization 266 of at least one SiC SMD component 200.

[0081] In many aspects, a first portion of the first solder portion 390 can be connected to a second portion of the first solder portion 390; and the second portion of the first solder portion 390 can be connected to a third portion of the first solder portion 390. In many aspects, the first portion, the second portion, and the third portion of the first solder portion 390 can form a U shape on a first top metal 366 of a first top metallization 266 that partially surrounds at least one SiC SMD component 200. In many aspects, the first portion, the second portion, and the third portion of the first solder portion 390 can form a U shape on the first top metal 366 that partially surrounds three sides of at least one SiC SMD component 200.

[0082] As Figure 5As further shown in, a second solder mask 396 can be disposed on a second top metal 368 of the device 300 adjacent to at least one SiC SMD component 200 along the x-axis and the z-axis. In many aspects, the second solder mask 396 can be disposed adjacent to a second top-side metallization 268 of at least one SiC SMD component 200 along the x-axis and the z-axis. In a specific aspect, the second solder mask 396 can be disposed in a first portion adjacent to the second top-side metallization 268 of at least one SiC SMD component 200 along the x-axis, the second solder mask 396 can be disposed in a second portion adjacent to the second top-side metallization 268 of at least one SiC SMD component 200 along the z-axis, and the second solder mask 396 can be disposed in a third portion adjacent to the second top-side metallization 268 of at least one SiC SMD component 200 along the x-axis.

[0083] In many aspects, the first portion of the second solder mask 396 can be connected to the second portion of the second solder mask 396; and the second portion of the second solder mask 396 can be connected to the third portion of the second solder mask 396. In many aspects, the first portion of the second solder mask 396, the second portion of the second solder mask 396, and the third portion of the second solder mask 396 can form a U-shape on the second top metal 368 that partially surrounds the second top-side metallization 268 of at least one SiC SMD component 200. In many aspects, the first portion of the second solder mask 396, the second portion of the second solder mask 396, and the third portion of the second solder mask 396 can form a U-shape on the second top metal 368 that partially surrounds three sides of at least one SiC SMD component 200.

[0084] As Figure 5 As further shown in, a second solder portion 392 can be disposed on a first top metal 366 of the device 300 adjacent to at least one SiC SMD component 200 along the x-axis and the z-axis. In many aspects, the second solder portion 392 can be disposed adjacent to a second top-side metallization 268 of at least one SiC SMD component 200 along the x-axis and the z-axis. In a specific aspect, the second solder portion 392 can be disposed in a first portion adjacent to the second top-side metallization 268 of at least one SiC SMD component 200 along the x-axis, the second solder portion 392 can be disposed in a second portion adjacent to the second top-side metallization 268 of at least one SiC SMD component 200 along the z-axis, and the second solder portion 392 can be disposed in a third portion adjacent to the second top-side metallization 268 of at least one SiC SMD component 200 along the x-axis.

[0085] In many aspects, a first portion of the second solder portion 392 can be connected to a second portion of the second solder portion 392; and the second portion of the second solder portion 392 can be connected to a third portion of the second solder portion 392. In many aspects, the first portion of the second solder portion 392, the second portion of the second solder portion 392, and the third portion of the second solder portion 392 can form a U-shape on a first top metal 366 of a second top-side metallization 268 that partially surrounds at least one SiC SMD component 200. In many aspects, the first portion of the second solder portion 392, the second portion of the second solder portion 392, and the third portion of the second solder portion 392 can form a U-shape on the first top metal 366 that partially surrounds three sides of at least one SiC SMD component 200.

[0086] The first solder mask 394, the second solder mask 396, the first solder portion 390, and the second solder portion 392 can be configured and / or arranged on the device 300 such that after solder reflow of the first solder portion 390 and the second solder portion 392, at least one SiC SMD component 200 aligns and centers itself on the device 300. The solder of the first solder portion 390 and the second solder portion 392 can also be arranged and configured such that the solder also flows away from any metal openings and gaps of the device 300. Specifically, the solder of the first solder portion 390 and the second solder portion 392 can also be arranged and configured such that the solder also flows away from any metal openings and gaps between the first top metal 366 and the second top metal 368 of the device 300.

[0087] Figure 6 is a photograph of a top view of at least one SiC SMD component according to many aspects of the present disclosure.

[0088] Figure 7 is according to Figure 6 a bottom view photograph of at least one SiC SMD component.

[0089] Figure 6 and Figure 7 Aspects of can include any one or more of the other features, components, arrangements, etc. described herein. Specifically, Figure 6 is a photograph of a top view of at least one SiC SMD component 200; and Figure 7 is a photograph of a bottom view of at least one SiC SMD component 200. As Figure 6 shown, at least one SiC SMD component 200 is shown as having a first top-side metallization 266 and a second top-side metallization 268 of at least one SiC SMD component 200; as Figure 7Shown are bottom SMD-like leads implemented via a first bottom-side metallization 240 and a second bottom-side metallization 242 of at least one SiC SMD component 200.

[0090] Figure 8 Is a photograph of a top view of at least one SiC SMD component and device before solder reflow in accordance with many aspects of the present disclosure.

[0091] Figure 9 Is in accordance with Figure 8 Is a photograph of a perspective top view of at least one SiC SMD component and device before solder reflow.

[0092] Figure 8 And Figure 9 Many aspects of and may include any one or more of the other features, components, arrangements, etc. described herein. Specifically, Figure 8 Is a photograph of a top view of at least one SiC SMD component 200 and device 300 before solder reflow; and Figure 9 Is a photograph of a perspective top view of at least one SiC SMD component 200 and device 300 before solder reflow. More specifically, Figure 8 And Figure 9 Illustrate at least one SiC SMD component 200 after placement of the component on device 300 before solder reflow.

[0093] Figure 10 Is a photograph of a top view of at least one SiC SMD component and device after solder reflow in accordance with many aspects of the present disclosure.

[0094] Figure 11 Is in accordance with Figure 10 Is a photograph of a perspective top view of at least one SiC SMD component and device after solder reflow.

[0095] Figure 10 And Figure 11 May include any one or more of the other features, components, arrangements, etc. described herein. Specifically, Figure 10 Is a photograph of a top view of at least one SiC SMD component 200 and device 300 after solder reflow; and Figure 11 Is a photograph of a perspective top view of at least one SiC SMD component 200 and device 300 after solder reflow. More specifically, Figure 10 And Figure 11 Illustrate at least one SiC SMD component 200 after placement of the component on device 300 after solder reflow. As Figure 10 And Figure 11As shown, after solder reflow, at least one SiC SMD component 200 aligns and centers itself on the device 300. Solder also flows away from any metal openings and gaps in the device 300.

[0096] Figure 12 A cross-sectional side view of a SiC SMD component according to the present disclosure is shown.

[0097] Figure 13 A cross-sectional side view of a device implementing a SiC SMD component according to Figure 12 is shown.

[0098] Figure 12 and Figure 13 Aspects may include any one or more of the other features, components, arrangements, etc. described herein. Specifically, Figure 12 Another embodiment of at least one SiC SMD component 200 is shown. In an Figure 12 aspect of at least one SiC SMD component 200, at least one SiC SMD component 200 can be implemented without a backside metallization or via. More specifically, in an Figure 12 aspect of at least one SiC SMD component 200, at least one SiC SMD component 200 is implemented without a first bottom-side metallization 240, a second bottom-side metallization 242, and a via 228. And, an aspect of at least one SiC SMD component 200 shown in Figure 12 before being flipped is shown. In this aspect, patterned top SMD-like leads can be implemented via a first top-side metallization 266 and a second top-side metallization 268. Thereafter, the Figure 12 aspect of at least one SiC SMD component 200 shown can be flipped and attached to the Figure 13 device 300 shown.

[0099] Further referring to Figure 12 , at least one SiC SMD component 200 can be implemented using a structure configured to implement a circuit 290. The Figure 12 aspect of at least one SiC SMD component 200 can be inverted and flipped as Figure 13 shown such that top pads including a first top-side metallization 266 and a second top-side metallization 268 form leads for contacting PCB solder pads (such as a first top metal 366 and a second top metal 368 of the device 300). In many aspects, due to the removal of backside metallizations (such as the Figure 1 first bottom-side metallization 240 and second bottom-side metallization 242 shown in Figure 1The via processing associated with via 228 shown, of at least one SiC SMD component 200 Figure 12 Aspects can have lower complexity, lower cost, etc. At least one first top-side metallization 266 and / or second top-side metallization 268 of at least one SiC SMD component 200 can be patterned on at least one SiC SMD component 200 to replicate SMD-like leads. In this aspect, the structure, arrangement, position, shape, etc. of the first top-side metallization 266 and / or second top-side metallization 268 replicate SMD-like leads. Thus, at least one SiC SMD component 200 can be configured to be implemented in place of a standard SMD type component.

[0100] In a specific aspect, at least one SiC SMD component 200 can be configured to implement a circuit 290 to form a metal-insulator-metal (MIM) capacitor having a first metal 264 and a second metal 274 with a dielectric layer 262 therebetween. The first metal 264 can be continuous or segmented, the dielectric layer 262 can be continuous or segmented, and the second metal 274 can be continuous or segmented. The metal-insulator-metal (MIM) capacitor can be defined by the area of the first metal 264 and / or second metal 274 and the thickness and dielectric constant of the dielectric layer 262.

[0101] The first metal 264 can be arranged parallel to the x-axis as shown, the first metal 264 can be continuous and arranged parallel to the first top-side metallization 266 and second top-side metallization 268. Further, the first metal 264 can be arranged vertically above the second metal 274 along the y-axis as shown before being flipped. Further, the first metal 264 can be arranged vertically below the second metal 274 along the y-axis after being flipped.

[0102] The second metal 274 can be formed as a metal surface on the upper surface 222 of the substrate 204 and can include metal materials such as copper, gold, nickel, palladium, silver, tin, gold-tin alloy, etc., and combinations thereof. In one aspect, the first metal 264 and second metal 274 can have a thickness of 0.1 micrometer to 0.6 micrometer, 0.1 micrometer to 0.2 micrometer, 0.2 micrometer to 0.3 micrometer, 0.3 micrometer to 0.4 micrometer, 0.4 micrometer to 0.5 micrometer, or 0.5 micrometer to 0.6 micrometer along the y-axis.

[0103] The dielectric layer 262 can be disposed on the second metal 274. Specifically, one or more intermediate layers or structures (not shown) can be present between the dielectric layer 262 and the second metal 274. In other aspects, the dielectric layer 262 can be disposed directly on the second metal 274. In one aspect, the dielectric layer 262 can be continuous. The dielectric layer 262 can include SiN, AlO, SiO, SiO2, AlN, etc. or combinations thereof, along with other intermediate layers. The dielectric layer 262 can have any thickness along the y-axis to provide a desired capacitance density, capacitance, cut-off voltage, etc. In some aspects, the dielectric layer 262 can have a thickness of to to to to to to to to to to to or to along the y-axis. In some aspects, the dielectric layer 262 can have a thickness greater than along the y-axis.

[0104] The first metal 264 can be disposed on the dielectric layer 262. Specifically, one or more intermediate layers or structures (not shown) can be present between the first metal 264 and the dielectric layer 262. In other aspects, the first metal 264 can be disposed directly on the dielectric layer 262. The first metal 264 can be formed as a metal surface on the upper surface of the dielectric layer 262 and can include metal materials such as copper, gold, nickel, palladium, silver, tin, gold-tin alloy, etc., and combinations thereof. In some aspects, the first metal 264 can include a stacked layer. In one aspect, the first metal 264 can have a thickness of 0.1 micrometer to 7 micrometers, 0.1 micrometer to 0.2 micrometer, 0.2 micrometer to 0.3 micrometer, 0.3 micrometer to 0.4 micrometer, 0.4 micrometer to 0.5 micrometer, 0.5 micrometer to 0.6 micrometer, 0.6 micrometer to 0.7 micrometer, 0.7 micrometer to 1 micrometer, 1 micrometer to 2 micrometers, 2 micrometers to 3 micrometers, 3 micrometers to 4 micrometers, 4 micrometers to 5 micrometers, 5 micrometers to 6 micrometers, or 6 micrometers to 7 micrometers along the y-axis.

[0105] Figure 14 A method of implementing at least one SiC SMD component according to the present disclosure is shown.

[0106] Figure 14 It can include any one or more of the other features, components, arrangements, etc. described herein. Specifically, Figure 14Method 600 for implementing at least one SiC SMD component is shown. It should be noted that the aspects of method 600 for implementing at least one SiC SMD component can be carried out in different orders consistent with the aspects described herein. In addition, method 600 for implementing at least one SiC SMD component can be modified to have more or fewer processes consistent with the various aspects disclosed herein.

[0107] Method 600 for implementing at least one SiC SMD component may include a substrate formation process 602. More specifically, substrate formation process 602 may include forming substrate 204. Substrate 204 may be constructed, configured, and / or arranged as described herein. In addition, substrate formation process 602 may include forming electrical connections in substrate 204, such as vias 228.

[0108] Moreover, method 600 for implementing at least one SiC SMD component may include forming a metallization layer 604. More specifically, forming metallization layer 604 may include forming a first bottom-side metallization 240, a second bottom-side metallization 242, a first top-side metallization 266, a second top-side metallization 268, a first metal 264, a second metal 274, etc. In many aspects, the first bottom-side metallization 240, the second bottom-side metallization 242, the first top-side metallization 266, the second top-side metallization 268, the first metal 264, the second metal 274, etc. may be constructed, configured, and / or arranged as described herein.

[0109] The process of forming metallization layer 604 may include using one or more manufacturing techniques, including print screening, screen printing process, lithography process, printing onto a transparent film process, photomask process combined with an etching process, photosensitized plate process, laser resist ablation process, grinding process, laser etching process, direct metal printing process, etc. The process of forming metallization layer 604 may include using one or more MMIC manufacturing processes and / or techniques, including sputtering, electroplating with lithography for pattern definition, etc.

[0110] In one or more aspects, a first bottom-side metallization 240, a second bottom-side metallization 242, a first top-side metallization 266, a second top-side metallization 268, a first metal 264, a second metal 274, etc. may be formed in a selected region on a substrate 204. In other aspects, the first bottom-side metallization 240, the second bottom-side metallization 242, the first top-side metallization 266, the second top-side metallization 268, the first metal 264, the second metal 274, etc. may be disposed on the entire surface of the substrate 204 and selectively etched and / or otherwise removed from selected locations on the substrate 204.

[0111] In addition, a method 600 of implementing at least one SiC SMD component may include forming a dielectric 606. In one or more aspects, forming the dielectric 606 may include forming a dielectric layer 262. In many aspects, the dielectric layer 262 may be formed in a selected region on the upper surface of the substrate 204. In other aspects, the dielectric layer 262 may be disposed on the entire surface of the substrate 204 and selectively etched and / or otherwise removed from selected locations on the upper surface of the substrate 204. In many aspects, the process of forming the metallization layer 604 and forming the dielectric 606 may be repeated to provide a desired configuration of the dielectric layer 262, the first bottom-side metallization 240, the second bottom-side metallization 242, the first top-side metallization 266, the second top-side metallization 268, the first metal 264, the second metal 274, etc.

[0112] In some aspects, a method 600 of implementing at least one SiC SMD component may include fabricating to form at least one SiC SMD component 200 in a wafer, panel, etc. The method 600 of implementing at least one SiC SMD component may include using a cutting device such as a wafer, circuit board, or package sawing device to cut the wafer to singulate at least one SiC SMD component 200 therefrom, which may have the advantage that at least one SiC SMD component 200 may be disposed on a cutting tape on an annular frame and may be directly loaded into a chip attachment device for subsequent assembly onto a device 300. The size of at least one SiC SMD component 200 may be optimized to a size that can be handled by subsequent assembly equipment such as SMT, cutting, and chip attachment equipment.

[0113] Figure 15 An apparatus according to the present disclosure is shown.

[0114] Figure 15 It may include any one or more other features, components, arrangements, etc. described herein. Specifically, Figure 15Method 700 of forming a forming apparatus is shown that relates to forming the apparatus 300 described herein. It should be noted that aspects of method 700 of forming a forming apparatus may be performed in a different order consistent with the aspects described herein. Additionally, it should be noted that portions of method 700 of forming a forming apparatus may be performed in a different order consistent with the aspects described herein. Further, method 700 of forming a forming apparatus may be modified to have more or fewer processes consistent with the various aspects disclosed herein.

[0115] Method 700 of forming a forming apparatus may include method 600 of implementing at least one SiC SMD component. More specifically, method 600 of implementing at least one SiC SMD component may include forming at least one SiC SMD component 200, and may construct, configure, and / or arrange at least one SiC SMD component 200 as described herein with respect to Figure 14 its related description.

[0116] Method 700 of forming a forming apparatus may include forming a substrate 702. More specifically, forming substrate 702 may include forming substrate 304. Substrate 304 may be constructed, configured, and / or arranged as described herein.

[0117] Method 700 of forming a forming apparatus may include forming a metallization layer 704. In a specific aspect, forming metallization layer 704 may include forming a metallization layer 340 on the lower surface 324 of substrate 304. More specifically, metallization layer 340 may be constructed, configured, and / or arranged as described herein. In a specific aspect, forming metallization layer 704 may include forming a first top metal 366 on the upper surface 322 of substrate 304. More specifically, first top metal 366 may be constructed, configured, and / or arranged as described herein.

[0118] Method 700 of forming a forming apparatus may include forming a solder mask 706. In a specific aspect, forming solder mask 706 may include forming a first solder mask 394. More specifically, first solder mask 394 may be constructed, configured, and / or arranged as described herein. In a specific aspect, forming solder mask 706 may include forming a second solder portion 392. More specifically, second solder portion 392 may be constructed, configured, and / or arranged as described herein. In a specific aspect, forming solder mask 706 may include forming the first solder mask 394 and / or the second solder portion 392 on the apparatus 300, the first top metal 366, the upper surface 322, etc. using a screen printing method, a stencil method, etc.

[0119] A method 700 of forming a device may include forming solder 708. In a specific aspect, forming solder 708 may include forming a first solder portion 390. More specifically, the first solder portion 390 may be constructed, configured, and / or arranged as described herein. In many aspects, the first solder portion 390 may be arranged on a first top metal 366 of the device 300. In a specific aspect, forming solder 708 may include forming the first solder portion 390 on the device 300, the first top metal 366, the upper surface 322, etc. using a screen printing method, a stencil method, or the like.

[0120] In a specific aspect, forming solder 708 may include forming a second solder portion 392. More specifically, the second solder portion 392 may be constructed, configured, and / or arranged as described herein. In many aspects, the second solder portion 392 may be arranged on a second top metal 368 of the device 300. In a specific aspect, forming solder 708 may include forming the second solder portion 392 on the device 300, the first top metal 366, the upper surface 322, etc. using a screen printing method, a stencil method, or the like.

[0121] A method of forming a device 700 may include arranging at least one SiC SMD component on the device 710. In a specific aspect, arranging at least one SiC SMD component on the device 710 may include arranging at least one SiC SMD component 200 on the device 300 as described herein.

[0122] In a specific aspect, arranging at least one SiC SMD component on the device 710 may include arranging at least one SiC SMD component 200 such that a first bottom-side metallization 240 of the at least one SiC SMD component 200 can be arranged on the first solder portion 390. In a specific aspect, arranging at least one SiC SMD component on the device 710 may include arranging at least one SiC SMD component 200 such that a second bottom-side metallization 242 of the at least one SiC SMD component 200 can be arranged on the second solder portion 392.

[0123] In a specific aspect, arranging at least one SiC SMD component on the device 710 may include flipping and arranging at least one SiC SMD component 200 such that a first top-side metallization 266 of the at least one SiC SMD component 200 can be arranged on the first solder portion 390 and a second top-side metallization 268 of the at least one SiC SMD component 200 can be arranged on the second solder portion 392. In this aspect, before being flipped Figure 12Aspects of at least one SiC SMD component 200 shown therein. And, patterned top SMD-like leads can be implemented by a first top-side metallization 266 and a second top-side metallization 268. Thereafter, Figure 12 Aspects of at least one SiC SMD component 200 shown can be attached to a device 300 as shown in Figure 13 Figure 300.

[0124] In one aspect, disposing at least one SiC SMD component on a device 710 can include processing using a surface mount technology (SMT) line. The surface mount technology (SMT) line can utilize a number of processes including solder printing, component placement, solder reflow, etc. Additional processes can include a flux cleaning step to remove all flux residues, wire bonding, cutting, mounting to a dicing tape, dicing, mechanical sawing or laser cutting, or a combination of both, and component testing. Additionally, at least one SiC SMD component 200 can be disposed on a dicing tape, and then the dicing tape can be used as an input to a chip attachment device to place at least one SiC SMD component 200 on a device 300.

[0125] A method 700 of forming a device can include reflowing solder 712. In many aspects, reflowing solder 712 can include reflowing a first solder portion 390 and / or a second solder portion 392. In many aspects, reflowing solder 712 can include reflowing the solder such that the solder flows away from any metal openings and gaps of the device 300. Specifically, the solder of the first solder portion 390 and the second solder portion 392 can also be arranged and configured such that the solder also flows away from any metal openings and gaps between a first top metal 366 and a second top metal 368 of the device 300. Reflowing solder 712 can utilize the self-aligning nature of solder reflow. Reflowing solder 712 can allow for a more precise attachment placement of at least one SiC SMD component 200 on a device 300. In this aspect, the surface tension of the solder tends towards the lowest state of surface tension, thus aligning at least one SiC SMD component 200 on a device 300.

[0126] Accordingly, at least one SiC SMD component 200 can be implemented with a circuit 290 as a capacitor, a spiral inductor, a transmission line, etc. At least one SiC SMD component 200 can include a patterned bottom-side metallization that can be attached to a device 300 such as a PCB (printed circuit board) by a first bottom-side metallization 240 and a second bottom-side metallization 242 using standard solder reflow methods and equipment.

[0127] Many aspects of the present disclosure can utilize a solder reflow method to attach at least one SiC SMD component 200 with higher accuracy. Aspects of at least one SiC SMD component 200 can utilize the self-aligning nature of the solder reflow method as described in method 700 for forming a device. Additionally, many aspects of at least one SiC SMD component 200 can utilize the self-aligning nature of the solder reflow method as described in method 700 for forming a device, which can be combined with a properly designed solder mask implemented by a first solder mask 394 and a second solder mask 396 on a device 300 (such as a PCB), which can allow for more precise attachment placement of at least one SiC SMD component 200, smaller placement tolerances for at least one SiC SMD component 200, etc.

[0128] In addition, the lower temperature profile of the solder reflow (which can be about 260°C) is less demanding on at least one SiC SMD component 200 and / or device 300. Thus, at least one SiC SMD component 200 and / or device 300 can have improved device reliability of attachment, device robustness, device assembly cost, etc. compared to epoxy attachment that may require a curing temperature of up to 400°C.

[0129] At least one SiC SMD component 200 can be attached to a device 300 (such as a PCB) that can have routed transmission lines, vias, solder masks, etc. Solder can be applied to a large PCB panel or other support using a screen printing method, stencil method, etc., and multiple at least one SiC SMD component 200 can be placed and reflowed simultaneously. Thus, multiple embodiments of attaching at least one SiC SMD component 200 reduce assembly time and cost.

[0130] Many aspects of at least one SiC SMD component 200 can have patterned bottom-side metallization, such as a first bottom-side metallization 240 and a second bottom-side metallization 242. In many aspects, the patterned bottom-side metallization can mimic and / or form leads consistent with a typical ceramic surface mount device (SMD). At least one SiC SMD component 200 can be designed, configured, implemented, etc. to replicate standard SMD component dimensions. Thus, the disclosed SiC component provides the high-temperature capabilities, high-voltage capabilities, low-loss capabilities, high-Q capabilities, and / or similar replacements of a standard SMD. Additionally, as needed, the disclosed SiC component can also be designed in any custom size, aspect ratio, coverage area, etc.

[0131] At least one SiC SMD component 200 can be configured as a surface-mounted SiC device, such as a surface-mounted SiC device disposed on a SiC substrate, and can be attached to a device 300 (such as a PCB) using a solder reflow method instead of epoxy resin, etc.

[0132] Many aspects of at least one SiC SMD component 200 can be configured with a patterned bottom-side implementation of a first bottom-side metallization 240 and a second bottom-side metallization 242 that can be configured in the size and / or form factor of a standard SMD cell, but the size of the SiC component can also be customized to any size / aspect ratio or footprint.

[0133] At least one SiC SMD component 200 can be configured to use a solder mask profile implemented by a first solder mask 394 and a second solder mask 396 to self-align and center at least one SiC SMD component 200 on the device 300 during the attachment process. Many aspects of at least one SiC SMD component 200 can be configured to provide improved alternatives. In this regard, at least one SiC SMD component 200 can be configured for higher power handling, better reliability, better thermal performance, etc. Also, at least one SiC SMD component 200 can be configured as a standard-profile SMD, such as the SMD package types described herein.

[0134] At least one SiC SMD component 200 and / or the device 300 can be configured to use existing tools and knowledge to attach at least one SiC SMD component 200 to the device 300. However, the existing tools and knowledge are applicable to the disclosed embodiments of at least one SiC SMD component 200 and the device 300. At least one SiC SMD component 200 can be configured to be implemented using a tool for placing a typical SMD component on a PCB, and the tool can be reconfigured to pick up at least one SiC SMD component 200 from a wafer frame and attach at least one SiC SMD component 200 to the device 300.

[0135] At least one SiC SMD component 200 can be configured to be placed with bottom pads implemented by a first bottom-side metallization 240 and a second bottom-side metallization 242 configured to contact the device 300. Many aspects of at least one SiC SMD component 200 can be configured to be flip-chip such that the top pads of at least one SiC SMD component 200 contact the device 300. At least one SiC SMD component 200 can be configured to use a solder reflow method that can handle smaller form factor SIC IPDs compared to current epoxy attachment methods.

[0136] Many aspects of at least one SiC SMD component 200 can advantageously utilize a lower temperature profile of solder reflow that can be less than 260°C. This can be beneficial compared to epoxy curing temperatures that can be as high as 400°C. Thus, 200 and / or device 300 can be configured for better reliability, ruggedness, cost, etc. In this regard, embodiments using reflow solder are cleaner, simpler, less costly, etc. Also, embodiments using reflow solder may not be thermally well-behaved. However, this is not required for passive devices. In this regard, the surface tension of the solder tends towards the lowest state of surface tension and thus aligns at least one SiC SMD component 200 on device 300.

[0137] At least one SiC SMD component 200 can be configured to be implemented in conjunction with a solder mask on device 300, which can be used to self-align, center, etc. at least one SiC SMD component 200 and prevent solder flow from spilling onto the bonding pads of device 300. Many aspects of at least one SiC SMD component 200 can be configured to be implemented using other tools, equipment, knowledge, etc. that are commonly known for SMD attachment on a PCB and can be reapplied to attach at least one SiC SMD component 200 to device 300.

[0138] In many aspects, at least one SiC SMD component 200 can have better thermal handling, higher power handling, better reliability, lifespan, etc. compared to typical multi-layer ceramic SMD components. Many aspects of at least one SiC SMD component 200 can be configured to be implemented in any similar form factor, profile, etc. to a standardized SMD (such as the SMD package types described herein), which allows for direct replacement of at least one SiC SMD component 200 on device 300.

[0139] Accordingly, the present disclosure provides SiC-based components configured to achieve improved attachment and improved attachment methods to reduce cost, manufacturing time, etc.

[0140] In various exemplary aspects, the present disclosure can relate to a silicon carbide (SiC) surface mount device (SMD) that includes: a substrate 204; a first metallization (a first top-side metallization 266, a first bottom-side metallization 240); a second metallization (a second top-side metallization 268, a second bottom-side metallization 242); a circuit 290 that is electrically connected to the first metallization (the first top-side metallization 266, the first bottom-side metallization 240) and the second metallization (the second top-side metallization 268, the second bottom-side metallization 242); and the first metallization (the first top-side metallization 266, the first bottom-side metallization 240) and the second metallization (the second top-side metallization 268, the second bottom-side metallization 242) are configured, constructed, and arranged to make a solder connection with a device 300, where the substrate 204 includes silicon carbide (SiC). Wherein the first metallization includes the first top-side metallization 266; wherein the second metallization includes the second top-side metallization 268; and wherein the first top-side metallization 266 and the second top-side metallization 268 are configured as SMD leads that are configured, constructed, and arranged to make a solder connection with the device 300. Wherein the circuit 290 is configured to implement a capacitor, an inductor, a spiral inductor, a transmission line, a resistor, and / or a combination thereof. Wherein the circuit 290 is configured to be electrically connected to the first top-side metallization 266 and the second top-side metallization 268. Wherein the circuit 290 is configured to be arranged on the upper surface 222 of the substrate 204. Wherein the device includes a substrate 304; wherein the substrate 304 includes a printed circuit board (PCB), a printed wiring board (PWB), and / or a printed circuit board assembly (PCBA); and wherein the first metallization (the first top-side metallization 266, the first bottom-side metallization 240) and the second metallization (the second top-side metallization 268, the second bottom-side metallization 242) are configured, constructed, and arranged to make a solder connection with the substrate 304. Wherein the substrate 204 is configured to include an upper surface 222 that is configured to support the first top-side metallization 266 and the second top-side metallization 268; and wherein the first top-side metallization 266 and the second top-side metallization 268 are configured to be arranged on the upper surface 222 of the substrate 204. Wherein the circuit 290 is configured to be arranged on the upper surface 222 of the substrate 204. Wherein the substrate 204 is configured to include a lower surface 224 and the first bottom-side metallization 240 and the second bottom-side metallization 242 located on the lower surface 224 of the substrate 204. Wherein the first metallization includes the first bottom-side metallization 240; wherein the second metallization includes the second bottom-side metallization 242; and wherein the silicon carbide (SiC) surface mount device (SMD) is configured as a flip-chip device.Wherein the first bottom-side metallization 240 and the second bottom-side metallization 242 are configured as SMD leads that are configured, constructed, and arranged to make solder connections with the device 300.

[0141] In various exemplary aspects, the present disclosure may relate to an apparatus 300 for implementing at least one SiC SMD component 200. The apparatus 300 includes a substrate 304, a first top metal 366, a second top metal 368, a metallization layer 340, a first solder portion 390 disposed on the first top metal 366, and a second solder portion 392 disposed on the second top metal 368. The apparatus 300 further includes: a first solder mask 394; a second solder mask 396, wherein the first solder mask 394 is disposed on the first top metal 366 of the apparatus 300. The second solder mask 396 is disposed on the second top metal 368 of the apparatus 300. At least one SiC SMD component 200 is configured to be attached to the substrate 304 using the first solder portion 390 and / or the second solder portion 392. The substrate 304 includes a printed circuit board (PCB), a printed wiring board (PWB), and / or a printed circuit board assembly (PCBA). The first solder portion 390 and the second solder portion 392 are configured to include reflow solder such that at least one SiC SMD component 200 self-aligns to a more precise expected placement position on the substrate 304 of the apparatus 300. The first solder mask 394 includes a first portion, a second portion, and a third portion; the first portion of the first solder mask 394 is configured to be connected to the second portion of the first solder mask 394; and the second portion of the first solder mask 394 is configured to be connected to the third portion of the first solder mask 394. The first portion of the first solder mask 394, the second portion of the first solder mask 394, and the third portion of the first solder mask 394 are configured to form a U shape on the first top metal 366; and the first solder portion 390 is configured to be disposed on the first top metal 366 of the apparatus 300. The first solder portion 390 includes a first portion, a second portion, and a third portion. The first portion of the first solder portion 390 is configured to be connected to the second portion of the first solder portion 390; and the second portion of the first solder portion 390 is configured to be connected to the third portion of the first solder portion 390. The first portion of the first solder portion 390, the second portion of the first solder portion 390, and the third portion of the first solder portion 390 are configured to form a U shape on the first top metal 366; the second solder mask 396 is configured to be disposed on the second top metal 368 of the apparatus 300; and the second solder mask 396 is configured to be disposed adjacent to the second top side metallization 268 of at least one SiC SMD component 200 in a first portion, a second portion, and a third portion. The first portion of the second solder mask 396 is configured to be connected to the second portion of the second solder mask 396; and the second portion of the second solder mask 396 is configured to be connected to the third portion of the second solder mask 396.Wherein a first portion of the second solder portion 392 is configured to connect to a second portion of the second solder portion 392, and wherein a second portion of the second solder portion 392 is configured to connect to a third portion of the second solder portion 392. Wherein the first portion of the second solder portion 392, the second portion of the second solder portion 392, and the third portion of the second solder portion 392 are configured to form a U shape on the first top metal 366. Wherein the first solder mask 394, the second solder mask 396, the first solder portion 390, and the second solder portion 392 are configured and / or arranged on the device 300 such that after solder reflow of the first solder portion 390 and the second solder portion 392, at least one SiC SMD component 200 aligns and centers itself on the device 300. Wherein the first solder portion 390 and the second solder portion 392 are configured to also be arranged and configured such that solder also flows away from any metal openings and gaps of the device 300. Wherein at least one SiC SMD component 200 is configured to be flipped. Wherein the first top-side metallization 266 and the second top-side metallization 268 form leads for making contact with the device 300. Wherein at least one SiC SMD component 200 is configured to implement a circuit 290 to form a metal-insulator-metal (MIM) capacitor having a first metal 264 and a second metal 274 with a dielectric layer 262 therebetween.

[0142] The following are various non-limiting embodiments of many aspects of the present disclosure.

[0143] One embodiment includes: A silicon carbide surface mount device includes a substrate. The silicon carbide surface mount device additionally includes a first metallization disposed on the substrate. Additionally, the silicon carbide surface mount device includes a second metallization disposed on the substrate. The silicon carbide surface mount device further includes a circuit disposed on the substrate and electrically connected to the first metallization and the second metallization. The silicon carbide surface mount device further includes the first metallization and the second metallization configured, constructed, and arranged to make a solder connection with a device. The silicon carbide surface mount device additionally includes the case where the substrate may include silicon carbide (SiC).

[0144] The above embodiments may further include any one or more combinations of the following embodiments: The silicon carbide surface mount device of the above embodiments, wherein the first metallization member may include a first top-side metallization member; and wherein the second metallization member may include a second top-side metallization member. The silicon carbide surface mount device of the above embodiments, wherein the circuit is configured to be electrically connected to the first top-side metallization member and the second top-side metallization member. The silicon carbide surface mount device of the above embodiments, wherein the silicon carbide (SiC) surface mount device (SMD) is configured as a flip-chip device; and wherein the first top-side metallization member and the second top-side metallization member are configured as SMD leads, and the SMD leads are configured, constructed, and arranged to make solder connections with the device. The silicon carbide surface mount device of the above embodiments, wherein the first bottom-side metallization member and the second bottom-side metallization member are configured as SMD leads, and the SMD leads are configured, constructed, and arranged to make solder connections with the device. The silicon carbide surface mount device of the above embodiments, wherein the device may include a substrate; wherein the substrate may include a printed circuit board (PCB), a printed wiring board (PWB), and / or a printed circuit board assembly (PCBA); and wherein the first metallization member and the second metallization member are configured, constructed, and arranged to make solder connections with the substrate. The silicon carbide surface mount device of the above embodiments, wherein the circuit is configured to implement a capacitor, an inductor, a spiral inductor, a transmission line, a resistor, and / or a combination thereof. The silicon carbide surface mount device of the above embodiments, wherein the silicon carbide (SiC) surface mount device (SMD) is configured to implement a circuit to form a metal-insulator-metal (MIM) capacitor, which capacitor has a first metal and a second metal, and has a dielectric layer between the first metal and the second metal. The device of the above embodiments, the device having: a substrate; a first top metal on the substrate; a second top metal on the substrate; a first solder portion disposed on the first top metal; and a second solder portion disposed on the second top metal, wherein the substrate may include a printed circuit board (PCB), a printed wiring board (PWB), and / or a printed circuit board assembly (PCBA). The device of the above embodiments may include: a first solder mask; and a second solder mask, wherein the first solder mask is disposed on the first top metal of the device; and wherein the second solder mask is disposed on the second top metal of the device. The device of the above embodiments, wherein the first solder mask and the second solder mask are configured to contain reflow solder such that the silicon carbide (SiC) surface mount device (SMD) self-aligns to a more precise intended placement position on the substrate of the device. The device of the above embodiments, wherein the first solder mask may include a first portion, a second portion, and a third portion, wherein the first portion of the first solder mask is configured to be connected to the second portion of the first solder mask; and wherein the second portion of the first solder mask is configured to be connected to the third portion of the first solder mask.The device of the above embodiment, wherein the first part of the first solder mask, the second part of the first solder mask, and the third part of the first solder mask are configured to form a U shape on the first top metal. The device of the above embodiment, wherein the silicon carbide (SiC) surface mount device (SMD) is configured to be attached to the substrate using the first solder portion and / or the second solder portion.

[0145] One embodiment includes: The method includes providing a substrate. The method further includes disposing a first metallization on the substrate. Additionally, the method includes a second metallization on the substrate. The method also includes disposing a circuit electrically connected to the first metallization and the second metallization. The method further includes reflowing solder to connect the first metallization and the second metallization to the device. Additionally, the method includes the case where the substrate may include silicon carbide (SiC).

[0146] The above embodiments may further include any one or more combinations of the following embodiments: The method of the above embodiments, wherein the first metallization member may include a first top-side metallization member; and wherein the second metallization member may include a second top-side metallization member. The method of the above embodiments, wherein the silicon carbide (SiC) surface mount device (SMD) is configured as a flip chip device; and wherein the first top-side metallization member and the second top-side metallization member are configured as SMD leads, and the SMD leads are configured, constructed, and arranged to make solder connections with the device. The method of the above embodiments may include electrically connecting a circuit to the first top-side metallization member and the second top-side metallization member. The method of the above embodiments, wherein the device may include a substrate; wherein the substrate may include a printed circuit board (PCB), a printed wiring board (PWB), and / or a printed circuit board assembly (PCBA); and wherein the first metallization member and the second metallization member are configured, constructed, and arranged to make solder connections with the substrate. The method of the above embodiments, wherein the first metallization member may include a first bottom-side metallization member; wherein the second metallization member may include a second bottom-side metallization member; and wherein the first bottom-side metallization member and the second bottom-side metallization member are configured as SMD leads, and the SMD leads are configured, constructed, and arranged to make solder connections with the device. The method of the above embodiments, wherein the circuit is configured to implement a capacitor, an inductor, a spiral inductor, a transmission line, a resistor, and / or a combination thereof. The method of the above embodiments, wherein the silicon carbide (SiC) surface mount device (SMD) is configured to implement a circuit to form a metal-insulator-metal (MIM) capacitor, and the capacitor has a first metal and a second metal, and there is a dielectric layer between the first metal and the second metal. The method of the above embodiments, the device has: providing a substrate; disposing a first top metal on the substrate; disposing a second top metal on the substrate; disposing a first solder portion disposed on the first top metal; and disposing a second solder portion disposed on the second top metal, wherein the substrate may include a printed circuit board (PCB), a printed wiring board (PWB), and / or a printed circuit board assembly (PCBA). The method of the above embodiments may include: disposing a first solder mask on the first top metal of the device; and disposing a second solder mask on the second top metal of the device. The method of the above embodiments, wherein the first solder mask and the second solder mask are configured to contain reflow solder, so that the silicon carbide (SiC) surface mount device (SMD) self-aligns to a more precise expected placement position on the substrate of the device. The method of the above embodiments, wherein the first solder mask may include a first portion, a second portion, and a third portion, wherein the first portion of the first solder mask is configured to be connected to the second portion of the first solder mask; and wherein the second portion of the first solder mask is configured to be connected to the third portion of the first solder mask.The method of the above embodiment, wherein the first part of the first solder mask, the second part of the first solder mask, and the third part of the first solder mask are configured to form a U shape on the first top metal. The method of the above embodiment, wherein the silicon carbide (SiC) surface mount device (SMD) is configured to be attached to the substrate using the first solder part and / or the second solder part.

[0147] Although the present disclosure has been described in exemplary aspects, those skilled in the art should recognize that modifications can be made within the spirit and scope of the appended claims to practice the present disclosure. These embodiments given above are merely illustrative and do not purport to be an exhaustive list of all possible designs, aspects, applications, or modifications of the present disclosure.

Claims

1. A silicon carbide (SiC) surface mount device (SMD), comprising: A substrate; A first metallization disposed on the substrate; A second metallization disposed on the substrate; A circuit disposed on the substrate and electrically connected to the first metallization and the second metallization; And The first metallization and the second metallization are configured, constructed, and arranged to make a solder connection with a device, Wherein the substrate comprises silicon carbide (SiC).

2. The silicon carbide (SiC) surface mount device (SMD) according to claim 1, Among them, The first metallization comprises a first top-side metallization; And Wherein the second metallization comprises a second top-side metallization.

3. The silicon carbide (SiC) surface mount device (SMD) according to claim 1, Among them, The first metallization comprises a first bottom-side metallization; Wherein the second metallization comprises a second bottom-side metallization; and Wherein the first bottom-side metallization and the second bottom-side metallization are configured as SMD leads, and the SMD leads are configured, constructed, and arranged to make a solder connection with the device.

4. The silicon carbide (SiC) surface mount device (SMD) according to claim 2, wherein, The circuit is configured to be electrically connected to the first top-side metallization and the second top-side metallization.

5. The silicon carbide (SiC) surface mount device (SMD) according to claim 2, Among them, The silicon carbide (SiC) surface mount device (SMD) is configured as a flip-chip device; and Wherein the first top-side metallization and the second top-side metallization are configured as SMD leads, and the SMD leads are configured, constructed, and arranged to make a solder connection with the device.

6. The silicon carbide (SiC) surface mount device (SMD) according to claim 1, Among them, The device comprises a substrate; Wherein the substrate comprises a printed circuit board (PCB), a printed wiring board (PWB), and / or a printed circuit board assembly (PCBA); and Wherein the first metallization and the second metallization are configured, constructed, and arranged to make a solder connection with the substrate.

7. The silicon carbide (SiC) surface mount device (SMD) according to claim 1, wherein, The circuit is configured to implement a capacitor, an inductor, a spiral inductor, a transmission line, a resistor, and / or a combination thereof.

8. The silicon carbide (SiC) surface mount device (SMD) according to claim 1, wherein, The silicon carbide (SiC) surface mount device (SMD) is configured to implement the circuit to form a metal-insulator-metal (MIM) capacitor, and the metal-insulator-metal (MIM) capacitor has a first metal and a second metal, and there is a dielectric layer between the first metal and the second metal.

9. A device for implementing the silicon carbide (SiC) surface mount device (SMD) according to claim 1, the device comprising: A substrate; A first top metal on the substrate; A second top metal on the substrate; A first solder portion disposed on the first top metal; And A second solder portion disposed on the second top metal, Wherein the substrate comprises a printed circuit board (PCB), a printed wiring board (PWB), and / or a printed circuit board assembly (PCBA).

10. The apparatus for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 9, further comprising: A first solder mask; And A second solder mask, wherein the first solder mask is disposed on the first top metal of the apparatus; and wherein the second solder mask is disposed on the second top metal of the apparatus.

11. The apparatus for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 9, wherein, The silicon carbide (SiC) surface mount device (SMD) is configured to be attached to the substrate using the first solder portion and / or the second solder portion.

12. The apparatus for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 10, wherein, The first solder mask and the second solder mask are configured to contain reflow solder such that the silicon carbide (SiC) surface mount device (SMD) self-aligns to a more precise intended placement position on the substrate of the apparatus.

13. The apparatus for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 10, Among them, The first solder mask includes a first portion, a second portion, and a third portion; wherein the first portion of the first solder mask is configured to be connected to the second portion of the first solder mask; and wherein the second portion of the first solder mask is configured to be connected to the third portion of the first solder mask.

14. The apparatus for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 13, wherein, The first portion of the first solder mask, the second portion of the first solder mask, and the third portion of the first solder mask are configured to form a U shape on the first top metal.

15. A method for implementing a silicon carbide (SiC) surface mount device (SMD), comprising: Providing a substrate; Disposing a first metallization on the substrate; Disposing a second metallization on the substrate; Disposing a circuit electrically connected to the first metallization and the second metallization; And Reflowing solder to connect the first metallization and the second metallization to the device, wherein the substrate includes silicon carbide (SiC).

16. The method for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 15, Among them, The first metallization includes a first top-side metallization; And wherein the second metallization includes a second top-side metallization.

17. The method for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 16, Among them, The silicon carbide (SiC) surface mount device (SMD) is configured as a flip-chip device; and wherein the first top-side metallization and the second top-side metallization are configured as SMD leads, and the SMD leads are configured, constructed, and arranged to make solder connections with the device.

18. The method for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 16, further comprising electrically connecting the circuit to the first top-side metallization and the second top-side metallization.

19. The method for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 15, Among them, The device includes a substrate; wherein the substrate includes a printed circuit board (PCB), a printed wiring board (PWB), and / or a printed circuit board assembly (PCBA); and Wherein, the first metallization part and the second metallization part are configured, constructed and arranged to perform a solder connection with the substrate.

20. The method for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 15, Among them, The first metallization part includes a first bottom-side metallization part; Wherein, the second metallization part includes a second bottom-side metallization part; and Wherein, the first bottom-side metallization part and the second bottom-side metallization part are configured as SMD leads, and the SMD leads are configured, constructed and arranged to perform a solder connection with the device.

21. The method for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 15, wherein, The circuit is configured to implement a capacitor, an inductor, a spiral inductor, a transmission line, a resistor, and / or a combination thereof.

22. The method for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 15, wherein, The silicon carbide (SiC) surface mount device (SMD) is configured to implement the circuit to form a metal-insulator-metal (MIM) capacitor, and the metal-insulator-metal (MIM) capacitor has a first metal and a second metal, and there is a dielectric layer between the first metal and the second metal.

23. A method for implementing a device for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 15, the device comprising: Providing a substrate; Arranging a first top metal on the substrate; Arranging a second top metal on the substrate; Arranging a first solder portion arranged on the first top metal; And Arranging a second solder portion arranged on the second top metal, Wherein, the substrate includes a printed circuit board (PCB), a printed wiring board (PWB), and / or a printed circuit board assembly (PCBA).

24. The method for implementing a device for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 23, further comprising: Arranging a first solder mask on the first top metal of the device; And Arranging a second solder mask on the second top metal of the device.

25. A method for implementing an apparatus for implementing a surface mount device (SMD) of silicon carbide (SiC), wherein, The silicon carbide (SiC) surface mount device (SMD) is configured to be attached to the substrate using the first solder portion and / or the second solder portion.

26. The method for implementing an apparatus for implementing a surface mount device (SMD) of silicon carbide (SiC) according to claim 24, wherein, The first solder mask and the second solder mask are configured to contain reflow solder, so that the silicon carbide (SiC) surface mount device (SMD) is self-aligned to a more precise expected placement position on the substrate of the device.

27. The method for implementing a device for implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 24, Among them, The first solder mask includes a first part, a second part, and a third part; Wherein, the first part of the first solder mask is configured to be connected to the second part of the first solder mask; and Wherein, the second part of the first solder mask is configured to be connected to the third part of the first solder mask.

28. A method for implementing a device for implementing a surface mount device (SMD) of silicon carbide (SiC), wherein, The first part of the first solder mask, the second part of the first solder mask, and the third part of the first solder mask are configured to form a U shape on the first top metal.

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