Composition for removing edge bead from metal-containing resist, developer composition, and method of forming pattern

Abstract

Provided are a composition for removing edge beads from a metal-containing resist or a composition for a metal-containing resist developer composition, and a method of forming a pattern using the same. The composition includes: a C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups; a monocarboxylic acid compound; and an organic solvent.

Description

[0001] Cross - reference to related applications

[0002] This application claims the benefit and priority of Korean Patent Application No. 10 - 2024 - 0003041, filed with the Korean Intellectual Property Office on January 8, 2024, the entire contents of which are incorporated herein by reference. Technical field

[0003] The present disclosure relates to a composition for removing edge beads from a metal - containing resist or a developer composition for a metal - containing resist, and a method of forming a pattern using the same. Background art

[0004] In recent years, the semiconductor industry has seen a substantial and continuous reduction in critical dimensions (CDs), which requires new types of high - performance photoresist materials and patterning methods that meet the needs or expectations for processing and patterning increasingly smaller features.

[0005] In addition, with the recent rapid development of the semiconductor industry, semiconductor devices are expected or required to have fast operation speeds and large storage capacities. In line with this requirement, process technologies for improving the integration, reliability, and response speed of semiconductor devices are being developed or pursued. For example, it is important or desirable to accurately control / implant impurities in the working areas of a silicon substrate and interconnect these areas to form devices and / or ultra - high - density integrated circuits, which can be achieved through a lithography process. For example, it is quite important or highly desirable to integrate a lithography process including the following operations: coating a photoresist on a substrate, selectively exposing it to ultraviolet (UV) (including extreme ultraviolet (EUV)) light, electron beam, X - ray, and / or the like, and then developing the photoresist.

[0006] For example, in the process of forming a photoresist layer, while rotating a silicon substrate, the resist is mainly coated on the substrate (e.g., the top surface of the substrate), but the resist may also be coated on the edges and back surface of the substrate, which may generate particles and / or cause pattern defects in subsequent semiconductor processes such as etching and / or ion implantation processes. Therefore, a process of using a diluent composition to strip and remove the photoresist coated on the edges and back surface of the silicon substrate, i.e., the edge bead removal (EBR) process, is performed. The EBR process requires or desires a composition that exhibits excellent or appropriate solubility in the photoresist, and the composition can effectively remove the beads and the photoresist remaining on the substrate (e.g., on the edges and back surface of the substrate), and does not produce or substantially does not produce resist residues (i.e., does not leave any resist residues or substantially does not leave resist residues).

[0007] There is a need or desire to develop a photoresist that can ensure excellent or appropriate etching resistance and resolution in a lithography process while also improving sensitivity and critical dimension (CD) uniformity and enhancing (i.e., improving) line edge roughness (LER) characteristics, as well as a developer composition that can achieve these required or desired characteristics. Summary of the Invention

[0008] Aspects according to one or more embodiments relate to a composition for removing edge beads from a metal-containing resist and / or a developer composition for a metal-containing resist.

[0009] One aspect according to one or more embodiments relates to a method of forming a pattern using the composition.

[0010] Other aspects will be partly set forth in the following description, and partly will be obvious from the description, or may be learned by practicing the presented embodiments of the present disclosure.

[0011] According to one or more embodiments, a solvent-based composition includes a C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups; a monocarboxylic acid compound; and an organic solvent, wherein the solvent-based composition is used for removing edge beads from a metal-containing resist or is a developer composition for a metal-containing resist.

[0012] A method of forming a pattern according to one or more embodiments includes: coating a metal-containing photoresist composition on a substrate; coating an edge bead removal composition for removing edge beads from the metal-containing resist along the edge of the substrate to remove the edge beads of the metal-containing resist; drying and heating to form a metal-containing photoresist layer on the substrate; exposing the metal-containing photoresist layer; and developing the metal-containing photoresist layer using a developer composition for the metal-containing resist.

[0013] At least one of an edge bead removal composition for removing edge beads from a metal-containing resist or a developer composition for a metal-containing resist includes the above solvent-based composition.

[0014] According to one or more embodiments, a composition for removing edge beads from a metal-containing resist (e.g., an edge bead removal composition) reduces metal-based contaminants inherent in the metal-containing resist and removes the resist coated on the edges and back of the substrate, thereby meeting the requirements for processing and patterning smaller features.

[0015] According to one or more embodiments, a developer composition for a metal-containing resist has improved cleaning ability and long-term stability, helps to remove the altered (e.g., reacted) photoresist regions after the exposure process, and maintains the removal performance for a long time. Therefore, excellent or appropriate exposure characteristics (sensitivity, CD margin, line width roughness / line edge roughness (LWR / LER), etc.) can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other aspects, features, and improvements of certain embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0017] Figure 1 is a schematic diagram of a photoresist coating apparatus.

[0018] Figures 2 to 4 is a cross-sectional view sequentially showing the process sequence of a method for forming a pattern according to one or more embodiments of the present disclosure.

[0019] REFERENCE NUMERAL DESCRIPTION

[0020] 1: Substrate support part;

[0021] 2: Nozzle;

[0022] 10: Photoresist solution;

[0023] 12: Edge bead;

[0024] 100: Substrate;

[0025] 110: Feature layer;

[0026] 110P: Feature pattern;

[0027] 130P: Photoresist pattern;

[0028] OP: Opening;

[0029] W: Substrate. DETAILED DESCRIPTION

[0030] Hereinafter, embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. In the following description of the present disclosure, known functions or structures will not be described in order to clarify the present disclosure.

[0031] To clearly illustrate the present disclosure, descriptions and relationships that should be understood by those of ordinary skill in the art are not provided, and throughout the disclosure, the same or similar configured components are designated by the same reference numerals. In addition, since the dimensions and thicknesses of each configuration shown in the drawings are arbitrarily shown for better understanding and convenience of description, the present disclosure is not necessarily limited thereto.

[0032] In the drawings, the thicknesses of layers, films, panels, regions, and / or the like may be exaggerated for clarity. In the drawings, the thicknesses of some layers, regions, and / or the like may be exaggerated for clarity. It should be understood that if (for example, when) a component such as a layer, film, region, or substrate is referred to as being "on" another component, it may be directly on the other component, or intervening components may also be present.

[0033] In the present disclosure, the term "substituted" means that a hydrogen atom is replaced by deuterium, a halogen, a hydroxyl group, a mercapto group, a cyano group, a carbonyl group, a carboxyl group, an amino group, an amide group, an ester group, a substituted or unsubstituted C1 to C30 amino group, a nitro group, a substituted or unsubstituted C1 to C40 silyl group, a C1 to C30 alkyl group, a C1 to C10 haloalkyl group, a C1 to C10 alkylsilyl group, a C3 to C30 cycloalkyl group, a C6 to C30 aryl group, a C1 to C20 alkoxy group, or a C1 to C20 sulfide group. As used herein, the term "unsubstituted" means that a hydrogen atom remains as a hydrogen atom without being replaced by another substituent.

[0034] In the present disclosure, unless otherwise defined, the term "alkyl" refers to a straight-chain or branched aliphatic hydrocarbon group. The alkyl group can be a "saturated alkyl" that does not contain any double or triple bonds.

[0035] The alkyl group can be a C1 to C20 alkyl group. For example, the alkyl group can be a C1 to C10 alkyl group or a C1 to C6 alkyl group. For example, a C1 to C5 alkyl group means that the alkyl chain contains 1 to 5 carbon atoms and can be selected from methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl, and tert-butyl.

[0036] Specific non-limiting examples of the alkyl group include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, pentyl, hexyl, and / or the like.

[0037] In the chemical formulas described herein, "t-Bu" refers to a tert-butyl group.

[0038] In the present disclosure, if (for example, when) no other definition is provided, the term "cycloalkyl" refers to a monovalent cyclic aliphatic hydrocarbon group.

[0039] The cycloalkyl group can be a C3-C10 cycloalkyl group, for example, a C3-C8 cycloalkyl group, a C3-C7 cycloalkyl group or a C3-C6 cycloalkyl group. For example, the cycloalkyl group can be cyclopropyl, cyclobutyl, cyclopentyl or cyclohexyl, but the present disclosure is not limited thereto.

[0040] In the present disclosure, if (for example, when) no other definition is provided, the term "heterocycloalkyl" refers to a cycloalkyl group containing at least one heteroatom selected from N, O, S, P and Si.

[0041] In the present disclosure, if (for example, when) no other definition is provided, the term "alkenyl" refers to a straight-chain or branched aliphatic hydrocarbon group and can refer to an aliphatic unsaturated alkenyl group containing one or more double bonds.

[0042] In the present disclosure, if (for example, when) no other definition is provided, the term "alkynyl" refers to a straight-chain or branched aliphatic hydrocarbon group and can refer to an unsaturated alkynyl group containing one or more triple bonds.

[0043] In the present disclosure, the term "aryl" refers to a substituent in which all elements of the cyclic substituent have p orbitals and these p orbitals form a conjugated substituent, and can include a monocyclic functional group, a polycyclic functional group or a fused-ring (i.e., a ring sharing adjacent carbon atom pairs) functional group.

[0044] For example, the term "heteroaryl" can refer to an aryl group containing at least one heteroatom selected from N, O, S, P and Si. Two or more heteroaryl groups can be directly connected by a σ bond, or if (for example, when) the heteroaryl group contains two or more rings, two or more rings can be fused. If (for example, when) the heteroaryl group is a fused ring, each ring can contain one to three heteroatoms.

[0045] For example, the substituted or unsubstituted C6-C30 aryl group can be a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted phenanthryl group, a substituted or unsubstituted naphthacenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted p-terphenyl group, a substituted or unsubstituted m-terphenyl group, a substituted or unsubstituted o-terphenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted benzo[a]pyrenyl group, a substituted or unsubstituted triphenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted indenyl group, and / or (for example, any suitable) their combination, but the present disclosure is not limited thereto.

[0046] For example, the substituted or unsubstituted C2-C30 heterocyclic group may be a substituted or unsubstituted furyl group, a substituted or unsubstituted thienyl group, a substituted or unsubstituted pyrrolyl group, a substituted or unsubstituted pyrazolyl group, a substituted or unsubstituted imidazolyl group, a substituted or unsubstituted triazolyl group, a substituted or unsubstituted oxazolyl group, a substituted or unsubstituted thiazolyl group, a substituted or unsubstituted oxadiazolyl group, a substituted or unsubstituted thiadiazolyl group, a substituted or unsubstituted pyridyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted triazinyl group, a substituted or unsubstituted benzofuryl group, a substituted or unsubstituted benzothienyl group, a substituted or unsubstituted benzimidazolyl group, a substituted or unsubstituted indolyl group, a substituted or unsubstituted quinolinyl group, a substituted or unsubstituted isoquinolinyl group, a substituted or unsubstituted quinazolinyl group, a substituted or unsubstituted quinoxalinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted benzoxazinyl group, a substituted or unsubstituted benzothiazinyl group, a substituted or unsubstituted acridinyl group, a substituted or unsubstituted phenazinyl group, a substituted or unsubstituted phenothiazinyl group, a substituted or unsubstituted phenoxazinyl group, a substituted or unsubstituted carbazolyl group, a substituted or unsubstituted dibenzofuryl group, or a substituted or unsubstituted dibenzothienyl group, a substituted or unsubstituted benzonaphthofuryl group, a substituted or unsubstituted benzonaphthothienyl group, a substituted or unsubstituted benzofuranylfluorene group, a substituted or unsubstituted benzothienylfluorene group, and / or (for example, any suitable) their combinations, but the present disclosure is not limited thereto.

[0047] Figure 1 is a schematic diagram showing a photoresist coating apparatus.

[0048] Refer to Figure 1 , which is equipped with a substrate support portion 1 (e.g., within a photoresist coating apparatus) on which a substrate W is placed, and the substrate support portion 1 includes a rotating chuck or a spin coater.

[0049] The substrate support portion 1 rotates in a first direction at a set or predetermined rotational speed to provide a centrifugal force to the substrate W. The nozzle 2 may be positioned above (or on) the substrate support portion 1, but outside the upper portion of the substrate W in the atmospheric region (e.g., the nozzle 2 may be spaced and / or separated from the upper surface of the substrate W (e.g., spaced apart)), such that the nozzle can move toward the upper portion of the substrate W and spray the photoresist solution 10 during a spraying step (e.g., an action or task). Thus, the photoresist solution 10 is coated on the surface of the substrate W by the centrifugal force. Here, when the photoresist solution 10 supplied to the center of the substrate W is diffused and coated toward the edge of the substrate W by the centrifugal force, a part of the photoresist solution 10 moves to the side surface of the substrate W and the lower surface of the substrate edge.

[0050] For example, in a coating process, the photoresist solution 10 is mainly coated by a spin coating method, in which a set or predetermined amount of the photoresist solution 10 having a (e.g., appropriate) viscosity is supplied to the central portion of the substrate W and gradually diffuses toward the edge of the substrate W by centrifugal force.

[0051] Accordingly, a photoresist layer is uniformly formed by the rotational movement (e.g., speed) of the substrate support portion.

[0052] This rotation also causes the solvent to evaporate from the solution (e.g., the photoresist solution 10), thereby gradually increasing its viscosity, resulting in a portion (e.g., a relatively large amount) of the photoresist accumulating at the edge of the substrate by the action of surface tension, and even accumulating on the lower surface of the substrate edge, which is referred to as the edge bead 12. That is, the edge bead 12 refers to the photoresist accumulated at the edge portion of the substrate, including those on the top surface, side surface, and bottom surface of the substrate.

[0053] Hereinafter, a composition (e.g., an edge bead removing composition) for removing edge beads from a metal-containing resist and / or a developer composition for a metal-containing resist according to one or more embodiments will be described.

[0054] According to one or more embodiments, a composition for removing edge beads from a metal-containing resist and / or a developer composition for a metal-containing resist includes: a C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups; a monocarboxylic acid compound; and an organic solvent.

[0055] The C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups and the monocarboxylic acid compound may be included in a weight ratio (C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups: monocarboxylic acid compound) of about 1:0.01 to 1:2.

[0056] As an example, the C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups and the monocarboxylic acid compound may be included in a weight ratio (C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups: monocarboxylic acid compound) of about 1:0.1 to 1:2, about 1:0.1 to 1:1.5, about 1:0.2 to 1:1.5, about 1:0.3 to 1:1.5, or about 1:0.4 to 1:1.5.

[0057] By using a mixture of a C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups and a monocarboxylic acid compound, the temporal stability of the composition is improved and the cleaning ability is enhanced, thereby minimizing or reducing various contaminant particles generated at the edge or backside of the substrate by the metal-containing photoresist, facilitating the removal of the photoresist regions that have changed (e.g., reacted) after the exposure process, and maintaining the removal performance over a long period. Accordingly, excellent or appropriate exposure characteristics (sensitivity, CD margin, LWR / LER, etc.) can be achieved.

[0058] In the present specification, the number of carbon atoms of the C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups does not include the carbon contained in the carboxyl group.

[0059] For example, for a C3 aliphatic hydrocarbon compound substituted with at least two carboxyl groups, it refers to a structure in which an aliphatic hydrocarbon having 3 carbon atoms is substituted with at least two carboxyl groups.

[0060] In one or more embodiments, the C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups may be acyclic.

[0061] For example, the C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups may be represented by Chemical Formula 1.

[0062] Chemical Formula 1

[0063]

[0064] In Chemical Formula 1,

[0065] L 1 may be a substituted or unsubstituted C3 to C20 alkylene group, a substituted or unsubstituted C3 to C20 alkenylene group, a substituted or unsubstituted C3 to C20 alkynylene group, a C2 to C20 alkylene group substituted with at least one C1 to C10 aliphatic hydrocarbon group or a C6 to C12 aromatic hydrocarbon group, a C2 to C20 alkenylene group substituted with at least one C1 to C10 aliphatic hydrocarbon group or a C6 to C12 aromatic hydrocarbon group, a C3 to C20 alkynylene group substituted with at least one C1 to C10 aliphatic hydrocarbon group or a C6 to C12 aromatic hydrocarbon group, and / or a combination thereof (e.g., any suitable combination),

[0066] R 1 may be an amino group, an amide group, a halogen, a hydroxyl group, or a carboxyl group, and

[0067] m1 may be an integer of 0 or greater.

[0068] The upper limit of m1 may be the maximum value that can be connected to L 1 but m1 may be less than the maximum value, for example, from 1 to 10, 1 to 8, 1 to 6, or 1 to 3.

[0069] In one or more embodiments, L 1 can be a substituted or unsubstituted propylene group, a substituted or unsubstituted butylene group, a substituted or unsubstituted pentylene group, a substituted or unsubstituted hexylene group, a substituted or unsubstituted propenylene group, a substituted or unsubstituted butenylene group, a substituted or unsubstituted pentenylene group, a substituted or unsubstituted hexenylene group, an ethylene group substituted with a C1 to C10 alkyl group, and / or a combination thereof (e.g., any suitable combination).

[0070] For example, a C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups can be any one of the compounds listed in Group 1 (e.g., selected from the following).

[0071] Group 1

[0072]

[0073] For example, a monocarboxylic acid compound can be any one of the compounds listed in Group 2 (e.g., selected from the following).

[0074] Group 2

[0075]

[0076] The C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups and the monocarboxylic acid compound (e.g., together) can be included in an amount of about 0.1 wt% to about 30 wt% based on the total weight of the composition.

[0077] For example, the C3 to C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups and the monocarboxylic acid compound can be included in an amount of about 0.1 wt% to about 25 wt% based on the total weight of the composition.

[0078] The composition for removing edge beads from a metal-containing resist according to the present disclosure can effectively (e.g., particularly effectively) remove the metal-containing resist, e.g., undesired metal residues (such as tin-based metal residues).

[0079] In addition, the developer composition for a metal-containing resist according to the present disclosure minimizes or reduces defects present in the metal-containing photoresist layer after the exposure process and allows for easy development, thereby achieving excellent or appropriate pattern characteristics.

[0080] In addition, excellent or appropriate sensitivity and reduced line edge roughness (LER) can be achieved.

[0081] In some embodiments, one or more other additives (to be described in more detail later) can be included, and the organic solvent can be included in a balanced amount in addition to the other included components.

[0082] One or more other additives may be selected from surfactants, dispersants, moisture absorbers, and coupling agents.

[0083] According to some example embodiments, a method of forming a pattern includes a step (e.g., an action or task) of using the aforementioned composition for removing edge beads from a metal-containing resist (e.g., an edge bead removal composition) to remove edge beads. For example, the fabricated pattern may be a photoresist pattern. For example, the fabricated pattern may be a negative or negative-type photoresist pattern.

[0084] A method of forming a pattern according to one or more embodiments includes coating a metal-containing resist (e.g., a photoresist) composition on a substrate, coating the aforementioned composition for removing edge beads from the metal-containing resist (e.g., an edge bead removal composition) along an edge of the substrate, drying and heating to form a metal-containing photoresist layer on the substrate, exposing the metal-containing photoresist layer, and developing the metal-containing photoresist layer.

[0085] For example, forming a pattern using a metal-containing resist composition may include coating a metal-containing resist composition on a substrate (on which a thin film is formed) by spin coating, slot coating, inkjet printing, and / or similar methods, and drying the coated metal-containing resist composition to form a photoresist layer. The metal-containing resist composition may include a tin-based compound. For example, the tin-based compound may include at least one organic oxy or organic carbonyl oxy group.

[0086] For example, the metal-containing resist composition may include a metal compound represented by Chemical Formula 2.

[0087] Chemical Formula 2

[0088]

[0089] In Chemical Formula 2,

[0090] R 2 may be selected from substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C3-C20 cycloalkyl, substituted or unsubstituted C2-C20 alkenyl, substituted or unsubstituted C2-C20 alkynyl, substituted or unsubstituted C6-C30 aryl, and substituted or unsubstituted C6-C30 aralkyl.

[0091] R 3 to R 5may each independently be a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C6-C30 aralkyl group, an alkoxy group or an aryloxy group (-OR a , where R a may be a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination)), a carboxyl group (-O(CO)R b , where R b may be hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination)), an alkylamido group or a dialkylamido group (-NR c R d , where R c and R d may each independently be hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination)), an amido group (-NR e (COR f ), where R e and R f may each independently be hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination)), an amidino group (-NR g C(NR h )R i , where R g , R h and R imay each independently be hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination), an alkylthio group or an arylthio group (-SR j , where R j may be a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination), or a thiocarboxy group (-S(CO)R k , where R k may be hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination), and

[0092] at least one selected from R 3 to R 5 is an alkoxy group or an aryloxy group (-OR a , where R a may be a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination), a carboxy group (-O(CO)R b , where R b may be hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination), an alkylamide group or a dialkylamide group (-NR c R d , where R c and R dmay each independently be hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination), an amide group (-NR e (COR f ), where R e and R f may each independently be hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination), an amidino group (-NR g C(NR h )R i , where R g , R h and R i may each independently be hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination), an alkylthio or arylthio group (-SR j , where R j may be a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination), or a thiocarboxyl group (-S(CO)R k , where R k may be hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, and / or a combination thereof (e.g., any suitable combination)), and is selected from.

[0093] That is, at least one selected from R 3 to R 5 is selected from an alkoxy or aryloxy group represented by -OR a , a carboxyl group represented by -O(CO)R b , an amino group represented by -NR c R dAn alkylamido or dialkylamido group represented by, an amido group represented by -NR e (COR f ), an amidino group represented by -NR g C(NR h )R i , an alkylthio or arylthio group represented by -SR j , and a thiocarboxy group represented by -S(CO)R k .

[0094] The metal compound contained in the metal-containing resist composition can be represented by Chemical Formula 3 or Chemical Formula 4.

[0095] Chemical Formula 3

[0096] R 6 z SnO (2-(z / 2)-(x / 2)) (OH) x

[0097] In Chemical Formula 3,

[0098] R 6 can be a C1-C31 hydrocarbon group, 0 < z ≤ 2, and 0 < (z + x) ≤ 4;

[0099] Chemical Formula 4

[0100] R 7 n Sn m X l Y k

[0101] Wherein, in Chemical Formula 4,

[0102] R 7 can be a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 aliphatic unsaturated organic group containing one or more double bonds or triple bonds, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C4-C30 heteroaryl group, a carbonyl group, an epoxyethyl group, an epoxypropyl group, and / or a combination thereof (e.g., any suitable combination),

[0103] X can be sulfur (S), selenium (Se), or tellurium (Te),

[0104] Y can be -OR m or -OC(=O)R n ,

[0105] where R mmay be a substituted or unsubstituted C1 - C20 alkyl group, a substituted or unsubstituted C3 - C20 cycloalkyl group, a substituted or unsubstituted C2 - C20 alkenyl group, a substituted or unsubstituted C2 - C20 alkynyl group, a substituted or unsubstituted C6 - C30 aryl group, and / or a combination thereof (e.g., any suitable combination).

[0106] R n may be hydrogen, a substituted or unsubstituted C1 - C20 alkyl group, a substituted or unsubstituted C3 - C20 cycloalkyl group, a substituted or unsubstituted C2 - C20 alkenyl group, a substituted or unsubstituted C2 - C20 alkynyl group, a substituted or unsubstituted C6 - C30 aryl group, and / or a combination thereof, and

[0107] n, m, l, and k may each independently be an integer from 1 to 20.

[0108] In one or more embodiments, a composition for removing edge beads from a metal - containing resist (e.g., an edge bead removal composition) may be coated along the edge of the substrate while the substrate is rotated at an appropriate or suitable speed (e.g., 500 revolutions per minute or higher).

[0109] Subsequently, a first heat treatment process of heating the substrate having a photoresist layer formed thereon is performed. The first heat treatment process may be performed at a temperature of about 80 °C to about 120 °C, during which the solvent evaporates and the photoresist layer may adhere more firmly to the substrate (i.e., during this process, the solvent evaporates, enabling the photoresist layer to adhere more firmly to the substrate).

[0110] Then, the photoresist layer is selectively exposed.

[0111] For example, examples of light that may be used in the exposure process may include not only light with a short wavelength (such as i - line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), or ArF excimer laser (wavelength 193 nm)), but also light with a high - energy wavelength (such as extreme ultraviolet light ((EUV), wavelength 13.5 nm), electron beam (E - beam), and / or similar light).

[0112] In some embodiments, the light for exposure may be light having a wavelength range of about 5 nm to about 150 nm, as well as light with a high - energy wavelength (such as EUV (extreme ultraviolet light, wavelength 13.5 nm), electron beam (E - Beam), and / or similar light).

[0113] In the step of forming a photoresist pattern (e.g., an action or task), a negative or negative - type pattern may be formed.

[0114] The exposed area of the photoresist layer has a different solubility from the unexposed area of the photoresist layer because polymers are formed through crosslinking reactions such as condensation between organometallic compounds.

[0115] Then, a second heat treatment process is performed on the substrate. The second heat treatment process can be performed at a temperature of about 90 °C to about 200 °C. By performing the second heat treatment process, the exposed area of the photoresist layer becomes difficult to dissolve in the developer.

[0116] For example, a photoresist pattern corresponding to a negative image can be completed by dissolving and removing the photoresist layer corresponding to the unexposed area using an organic solvent such as 2-heptanone.

[0117] Examples of the organic solvents contained in the developer composition used in the method of forming a pattern according to one or more embodiments can be, for example, one or more ketones such as methyl ethyl ketone, acetone, cyclohexanone, and / or 2-heptanone, alcohols such as 4-methyl-2-pentanol, 1-butanol, isopropyl alcohol, 1-propanol, and / or methanol, esters such as propylene glycol methyl ether acetate, ethyl acetate, ethyl lactate, n-butyl acetate, butyrolactone, aromatic compounds such as benzene, xylene, and / or toluene, and / or a combination thereof (e.g., any suitable combination).

[0118] The photoresist pattern (formed not only by exposure to light with a short wavelength such as i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), or ArF excimer laser (wavelength 193 nm), but also by exposure to light with high energy such as EUV (extreme ultraviolet, wavelength 13.5 nm), and / or exposure to an electron beam (E-beam)) can have a thickness (e.g., thickness width) of about 5 nm to about 100 nm. That is, the photoresist pattern formed by exposure to light with a short wavelength (such as i-line (365 nm), KrF excimer laser (248 nm), ArF excimer laser (193 nm)) or high energy light (such as EUV (extreme ultraviolet, 13.5 nm), or even an electron beam (E-beam)) can have a thickness of about 5 nm to about 100 nm. For example, the photoresist pattern can be formed to have a thickness (e.g., thickness width) of about 5 nm to about 90 nm, about 5 nm to about 80 nm, about 5 nm to about 70 nm, about 5 nm to about 60 nm, about 5 nm to about 50 nm, about 5 nm to about 40 nm, about 5 nm to about 30 nm, or about 5 nm to about 20 nm.

[0119] In addition, the photoresist pattern may have a pitch (the distance between two identical points in adjacent patterns) with a half-pitch (half of the distance between two identical patterns) less than or equal to about 50 nanometers, for example, less than or equal to 40 nanometers, less than or equal to 30 nanometers, less than or equal to 20 nanometers, or less than or equal to 15 nanometers; and a line width roughness less than or equal to about 10 nanometers, for example, less than or equal to about 5 nanometers, less than or equal to about 3 nanometers, or less than or equal to about 2 nanometers.

[0120] A method of forming a pattern according to one or more embodiments includes coating a metal-containing photoresist composition on a substrate, removing edge beads of the metal-containing photoresist, drying and heating to form a metal-containing photoresist layer on the substrate, exposing the metal-containing photoresist layer, and developing using the developer composition of the above-described metal-containing resist.

[0121] Coating the metal-containing resist composition on the substrate is the same as described above.

[0122] Removing edge beads of the metal-containing resist can be performed by coating an appropriate or suitable amount of an appropriate (e.g., commonly known) organic solvent or composition along the edge of the substrate while the substrate is rotating at an appropriate or suitable speed (e.g., 500 revolutions per minute or higher).

[0123] Drying and heating on the substrate to form a metal-containing photoresist layer is the same as described above.

[0124] Exposing the metal-containing photoresist layer is the same as described above.

[0125] A photoresist pattern corresponding to a negative image can be completed by dissolving the photoresist layer corresponding to the unexposed area using the developer composition of the above-described metal-containing resist, and then removing the photoresist layer.

[0126] Specific non-limiting examples of the metal compound included in the metal-containing resist composition are as described above.

[0127] Hereinafter, a method of forming a pattern by development will be described in more detail with reference to the drawings.

[0128] Figures 2 to 4 is a cross-sectional view illustrating the process sequence of the method of forming a pattern.

[0129] Referring to Figure 2 , the exposed photoresist layer (e.g., coated on substrate 100) is developed to form a photoresist pattern 130P.

[0130] In one or more embodiments, the exposed photoresist layer may be developed to remove the unexposed regions of the photoresist layer, and a photoresist pattern 130P including the exposed regions of the photoresist layer may be formed. The photoresist pattern 130P may include a plurality of openings OP.

[0131] In one or more embodiments, the development of the photoresist layer may be performed by a negative-tone development (NTD) process. Here, a developer composition according to one or more embodiments (e.g., a metal-containing photoresist developer composition) may be used as the developer composition.

[0132] Referring to Figure 3 , the photoresist pattern 130P is used to process the feature layer (e.g., the target layer) 110 from the Figure 2 results shown.

[0133] For example, the feature layer 110 is processed by one or more suitable processes, which include: etching the exposed feature layer 110 through the openings OP of the photoresist pattern 130P, implanting impurity ions into the feature layer 110, forming an additional thin film on the feature layer 110 through the openings OP, deforming (e.g., removing) a portion of the feature layer 110 through the openings OP, and / or similar processes. Figure 3 An example process of processing the feature pattern 110P by etching the feature layer 110 exposed through the openings OP is shown.

[0134] Referring to Figure 4 , removing Figure 3 the photoresist pattern 130P remaining on the feature pattern 110P in the results shown. To remove the photoresist pattern 130P, ashing and stripping processes may be used.

[0135] A method of forming a pattern according to one or more embodiments includes: coating a metal-containing resist composition on a substrate, coating the above-described composition for removing edge beads from the metal-containing resist (e.g., an edge bead removal composition) along the edge of the substrate, drying and heating to form a metal-containing photoresist layer on the substrate, exposing the metal-containing photoresist layer, and developing the metal-containing photoresist layer using the above-described developer composition for the metal-containing resist.

[0136] Each step (e.g., action or task) of the method is substantially the same as above, but in the step of removing edge beads (e.g., action or task) and the development step (e.g., action or task), according to embodiments of the present disclosure, a composition for removing edge beads from a metal-containing resist (e.g., edge bead removal composition) and a developer composition for the metal-containing resist are used simultaneously (e.g., synchronously) to effectively improve the effect of removing edge beads and the solubility of the unexposed area, so as to meet the requirements or expectations for processing and patterning smaller features, and ultimately achieve excellent or appropriate contrast characteristics, excellent or appropriate sensitivity, and reduced line edge roughness (LER).

[0137] After that, the present disclosure will be described in more detail by examples related to the preparation of the above-mentioned composition for removing edge beads from a metal-containing resist and the developer composition for the metal-containing resist. However, the technical features of the present disclosure are not limited by the following examples.

[0138] Preparation of composition / developer composition for removing edge beads from metal-containing resist

[0139] Example 1

[0140] According to the combinations shown in Table 1, glutaric acid and propionic acid were mixed with propylene glycol methyl ether acetate (PGMEA) as a solvent, and then completely dissolved therein by shaking at room temperature (25 °C). Subsequently, the obtained solution was filtered through a UPE filter material with a pore size of 0.01 μm to obtain the final composition.

[0141] Examples 2 to 7 and Comparative Examples 1 to 5

[0142] Except that the composition was changed to each corresponding composition shown in Table 1, each composition was prepared in substantially the same manner as in Example 1.

[0143] Table 1

[0144]

[0145] Preparation of metal-containing photoresist composition

[0146] A metal-containing compound having a structural unit of Chemical Formula C was dissolved in propylene glycol methyl ether acetate (PGMEA) at a concentration of 3 wt%, and then filtered through a 0.01 μm UPE filter to prepare a photoresist composition.

[0147] Chemical Formula C

[0148]

[0149] Evaluation 1: Evaluate the Sn residue amount

[0150] Place 1.0 mL of the photoresist composition according to the preparation example on an 8-inch silicon wafer, let it stand for 20 seconds, and then spin-coat it at a speed of 1,500 rpm for 30 seconds to prepare a wafer with a photoresist layer formed thereon. Subsequently, add 6.5 mL of each developer composition shown in Table 1 to each wafer with the photoresist layer formed thereon, let it stand for 20 seconds, and then spin-dry (e.g., spin-coat and / or dry) it at a speed of 2,000 rpm for 30 seconds. Repeat the process of adding the developer composition, standing, and spin-drying 3 times. Bake the obtained wafer at 150 °C for 60 seconds, and then perform vapor-phase decomposition inductively coupled plasma-mass spectrometry (VPD ICP-MS) analysis to confirm the Sn content (e.g., amount).

[0151] Evaluation 2: Evaluate room-temperature storage

[0152] Store each developer composition described in Table 1 at room temperature for 3 months, and then perform VPD ICP-MS analysis to analyze the residual Sn content (e.g., amount). In addition, check the total amount of carboxylic acid compounds (e.g., the total content of polycarboxylic acid and monocarboxylic acid) before and after storage by gas chromatography (GC) analysis, and check the water content (e.g., amount) before and after storage by Karl-Fisher measurement.

[0153] Use the ratio of the content (e.g., amount) after storage to the content (e.g., amount) before storage to evaluate the room-temperature storage stability.

[0154] Table 2

[0155]

[0156] Referring to Table 2, each metal-containing photoresist developer composition according to an example exhibits stable and excellent or appropriate development performance, with no (or little) change in room temperature storage in terms of residual Sn content (e.g., amount), total amount of carboxylic acid compound, and moisture content (e.g., amount), and maintains development performance for a long time. That is, compared with the metal-containing photoresist developer compositions from comparative examples, each metal-containing photoresist developer composition from examples exhibits stable and excellent development performance during room temperature storage, with minimal or little change in residual Sn content, total amount of carboxylic acid compound, and moisture content. These compositions maintain their development performance over an extended period. The characteristics of these compositions, when applied to the process, reduce metal-like contaminants inherent in the metal-containing photoresist, thereby enabling finer pattern formation and excellent or appropriate exposure characteristics (sensitivity, CD margin, LWR / LER, etc.). That is, when applied to the process, these characteristics reduce metal-like contaminants inherent in the metal-containing photoresist, enabling finer pattern formation and excellent exposure characteristics such as sensitivity, CD margin, and / or LWR / LER.

[0157] The use of "may" when describing embodiments of the inventive concept refers to "one or more embodiments of the inventive concept". It will be further understood that when used in this specification, the terms "comprises", "comprising", "includes" and / or "including" specify the presence of the stated features, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components and / or groups thereof. As used herein, the term "a combination thereof" refers to a mixture, laminate, composite, copolymer, alloy, blend, reaction product, and / or the like of the components.

[0158] As used herein, the terms "use", "in use", and "being used" may be considered synonymous with the terms "utilize", "in utilization", and "being utilized", respectively. As used herein, when appearing before a list of elements, expressions such as "at least one", "one", and "selected from" modify the entire list of elements, rather than individual elements in the list. For example, "at least one selected from a, b, and c", "at least one of a, b, or c", and "at least one of a, b, and / or c" may represent only a, only b, only c, (e.g., simultaneously) both a and b, (e.g., simultaneously) both a and c, (e.g., simultaneously) both b and c, all of a, b, and c, or variants thereof.

[0159] As used herein, the term "about" and similar terms are used as approximate terms and not as terms of degree, and are intended to account for the deviations inherent in the measured or calculated values that would be recognized by a person of ordinary skill in the art. "About" as used herein includes the recited value and means within an acceptable deviation of the particular value as determined by a person of ordinary skill in the art, taking into account the measurements discussed and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations, or within ±30%, 20%, 10%, 5% of the recited value.

[0160] In addition, any numerical range recited herein is intended to include all sub-ranges of the same numerical precision that are included within the recited range. For example, a range of "1.0 to 10.0" is intended to include all sub-ranges (and including) between the recited minimum value of 1.0 and the recited maximum value of 10.0, i.e., having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limitation recited herein is intended to include all lower numerical limitations therein, and any minimum numerical limitation recited in this specification is intended to include all higher numerical limitations therein. Accordingly, the applicant reserves the right to amend this specification (including the claims) to expressly recite any sub-ranges that are included within the ranges expressly recited herein.

[0161] Prior to this, certain embodiments of the present disclosure have been described and illustrated. However, it will be apparent to a person of ordinary skill in the art that the present disclosure is not limited to the one or more embodiments described, and various modifications and transformations can be made without departing from the spirit and scope of the present disclosure. Accordingly, such modified or transformed embodiments may not be understood separately from the technical ideas and aspects of the present disclosure, and the modified embodiments are within the scope of the claims of the present disclosure and their equivalents.

Claims

1. A solvent composition, comprising: A C3 - C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups; A monocarboxylic acid compound; And An organic solvent, Wherein the solvent composition is a composition for removing edge beads from a metal - containing resist or a developer composition for a metal - containing resist.

2. The solvent composition according to claim 1, wherein The weight ratio between the C3 - C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups and the monocarboxylic acid compound is from 1:0.01 to 1:

2.

3. The solvent composition according to claim 1, wherein The C3 - C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups is acyclic.

4. The solvent composition according to claim 1, wherein The C3 - C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups is represented by Chemical Formula 1: [Chemical Formula 1] Among them, In Chemical Formula 1, L 1 is a substituted or unsubstituted C3-C20 alkylene group, a substituted or unsubstituted C3-C20 alkenylene group, a substituted or unsubstituted C3-C20 alkynylene group, a C2-C20 alkylene group substituted by at least one C1-C10 aliphatic hydrocarbon group or C6-C12 aromatic hydrocarbon group, a C2-C20 alkenylene group substituted by at least one C1-C10 aliphatic hydrocarbon group or C6-C12 aromatic hydrocarbon group, a C3-C20 alkynylene group substituted by at least one C1-C10 aliphatic hydrocarbon group or C6-C12 aromatic hydrocarbon group, or a combination thereof, R 1 is an amino group, an amide group, a halogen group, a hydroxyl group or a carboxyl group, and m1 is an integer of 0 or greater.

5. The solvent composition according to claim 4, wherein L 1 is a substituted or unsubstituted propylene group, a substituted or unsubstituted butylene group, a substituted or unsubstituted pentylene group, a substituted or unsubstituted hexylene group, a substituted or unsubstituted propenylene group, a substituted or unsubstituted butenylene group, a substituted or unsubstituted pentenylene group, a substituted or unsubstituted hexenylene group, an ethylene group substituted with a C1-C10 alkyl group, or a combination thereof.

6. The solvent composition according to claim 1, wherein The C3 - C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups is any one selected from the compounds in Group 1: [Group 1] 7. The solvent composition according to claim 1, wherein The monocarboxylic acid compound is any one selected from the compounds in Group 2: [Group 2] 8. The solvent composition according to claim 1, wherein Based on the total weight of the composition, the amounts of the C3 - C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups and the monocarboxylic acid compound are from 0.1 wt% to 30 wt%.

9. The solvent composition according to claim 1, wherein Based on the total weight of the composition, the amounts of the C3 - C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups and the monocarboxylic acid compound are from 0.1 wt% to 25 wt%.

10. A method of forming a pattern, the method comprising: Coating a metal - containing photoresist composition on a substrate; Coating an edge bead removal composition for removing edge beads from the metal - containing resist along the edge of the substrate to remove edge beads; Drying and heating to form a metal - containing photoresist layer on the substrate; Exposing the metal - containing photoresist layer; And Developing the metal - containing photoresist layer using a developer composition for a metal - containing resist, Wherein at least one of the edge bead removal composition or the developer composition is the solvent composition according to claim 1.

11. The method according to claim 10, wherein The metal - containing photoresist composition comprises a metal compound, and The metal compound comprises at least one of an organic oxy group or an organic carbonyl oxy group.

12. The method according to claim 10, wherein The metal - containing photoresist composition comprises a metal compound represented by Chemical Formula 2: [Chemical Formula 2] Among them, In Chemical Formula 2, R 2 selected from substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C3-C20 cycloalkyl, substituted or unsubstituted C2-C20 alkenyl, substituted or unsubstituted C2-C20 alkynyl, substituted or unsubstituted C6-C30 aryl, and substituted or unsubstituted C6-C30 aralkyl R 3 to R 5 Each independently is: A substituted or unsubstituted C1 - C20 alkyl group; A substituted or unsubstituted C3 - C20 cycloalkyl group; A substituted or unsubstituted C2 - C20 alkenyl group; Substituted or unsubstituted C2-C20 alkynyl; Substituted or unsubstituted C6-C30 aryl; Substituted or unsubstituted C6-C30 aralkyl; -OR a represents an alkoxy or aryloxy group, where R a is a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof; -O(CO)R b represents a carboxyl group, where R b is hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof; -NR c R d represents an alkylamido or dialkylamido group, wherein R c and R d are each independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof; -NR e (COR f ) represents an amide group, where R e and R f are each independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof; -NR g C(NR h )R i represents an amidino group, where R g , R h and R i are each independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof; -SR j represents an alkylthio or arylthio group, where R j is a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof; or -S(CO)R k represents a thiocarboxyl group, wherein R k is hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof, and Selected from R 3 to R 5 At least one selected from the group consisting of -OR a Represents an alkoxy or aryloxy group, -O(CO)R b Represents a carboxyl group, -NR c R d Represents an alkylamide or dialkylamide group, -NR e (COR f ) Represents an amide group, -NR g C(NR h )R i Represents an amidino group, -SR j Represents an alkylthio or arylthio group, and -S(CO)R k Represents a thiocarboxyl group.

13. The method according to claim 10, wherein the metal-containing photoresist composition comprises a metal compound represented by Chemical Formula 3 or Chemical Formula 4: [Chemical Formula 3] R 6 z SnO (2-(z / 2)-(x / 2)) (OH) x Among them, In Chemical Formula 3, R 6 is a C1 to C31 hydrocarbon group, 0 < z ≤ 2, and 0 < (z + x) ≤ 4, [Chemical Formula 4] R 7 n Sn m X l Y k wherein, in Chemical Formula 4, R 7 is a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 aliphatic unsaturated organic group containing one or more double bonds or triple bonds, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C4-C30 heteroaryl group, a carbonyl group, an oxiranyl group, an oxetanyl group, or a combination thereof, X is sulfur (S), selenium (Se) or tellurium (Te), Y is -OR m or -OC(=O)R n , wherein R m is a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof, and R n is hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof, and n, m, l and k are each independently an integer from 1 to 20.

14. The method according to claim 10, wherein the edge bead removal composition is the solvent-based composition.

15. The method according to claim 10, wherein the developer composition is the solvent-based composition.

16. The method according to claim 10, wherein both the edge bead removal composition and the developer composition are the solvent-based composition.

17. A composition for removing edge beads from a metal-containing resist, which is the solvent-based composition as claimed in claim 1.

18. A developer composition for a metal-containing resist, which is the solvent-based composition as claimed in claim 1.

19. A solvent-based composition comprising: a C3-C20 aliphatic hydrocarbon compound substituted with at least two carboxyl groups; a monocarboxylic acid compound; and an organic solvent.

20. A method of forming a pattern, the method comprising: coating a metal-containing photoresist composition on a substrate; coating an edge bead removal composition for removing edge beads from the metal-containing resist along an edge of the substrate to remove edge beads; drying and heating to form a metal-containing photoresist layer on the substrate; exposing the metal-containing photoresist layer; and developing the metal-containing photoresist layer using a developer composition for a metal-containing resist, wherein at least one of the edge bead removal composition or the developer composition is the solvent-based composition as claimed in claim 19.

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