Electronic device and airflow generating package

Abstract

The invention discloses an electronic device and an airflow generating packaging body. The electronic device comprises an operation element, a heat conduction element and the airflow generating packaging body. The operating element generates heat during operation. The heat conducting element is used for conducting heat generated by the operating element, and the operating element is arranged on the heat conducting element. The airflow generating packaging body is arranged beside the edge of the electronic device. The airflow generating package includes a membrane structure including a pair of flaps, the pair of flaps including a first flap and a second flap, the pair of flaps operating at an ultrasonic frequency to generate an airflow. The heat conducting element extends towards the airflow generating packaging body, so that airflow generated by the airflow generating packaging body flows through the heat conducting element, and heat generated by the operating element is dissipated through the heat conducting element.

Description

Technical Field

[0001] The present invention relates to an electronic device and an airflow generating package, and more particularly to an electronic device and an airflow generating package with improved heat dissipation performance. Background Art

[0002] In today's society, the thermal management of a device significantly affects the performance of components in the device, making the performance of the device highly related to its thermal management. For example, in an electronic device (such as a smart phone, a tablet computer, etc.), which is actually a kind of device, with the miniaturization of the electronic device and the increasing complexity of its operations, the electronic device consumes more battery power. Moreover, artificial intelligence (AI) operations require even more complex computations. Therefore, thermal management is crucial for the efficiency of operations (such as AI operations). Accordingly, thermal management becomes increasingly important for the future viability of electronic devices (such as palm-sized electronic devices or servers in data centers).

[0003] Therefore, it is necessary to improve the thermal management (such as heat dissipation performance) of the device to enhance the performance of the device. Summary of the Invention

[0004] Therefore, the main objective of the present invention is to provide an electronic device, in which the heat dissipation performance of the electronic device is improved based on the presence of components for generating a plurality of air pulses. In addition, the present invention also provides a related airflow generating package. In addition, the present invention also provides a semiconductor device, which is an above-mentioned electronic device.

[0005] An embodiment of the present invention discloses an electronic device, which includes an operating element, a heat conducting element, and an airflow generating package. The operating element generates heat during operation. The heat conducting element is used to conduct the heat generated by the operating element, and the operating element is disposed on the heat conducting element. The airflow generating package is disposed beside the edge of the electronic device. The airflow generating package includes a membrane structure, and the membrane structure includes a pair of flaps, and the pair of flaps includes a first flap and a second flap. The pair of flaps operates at an ultrasonic frequency to generate an air flow. The heat conducting element extends towards the airflow generating package, so that the air flow generated by the airflow generating package flows through the heat conducting element to dissipate the heat generated by the operating element through the heat conducting element.

[0006] An embodiment of the present invention discloses an airflow generating package, which includes a substrate and a membrane structure. The membrane structure is disposed on the substrate and operates at an ultrasonic frequency to cause the airflow generating package to generate an air flow. An air channel is formed in the substrate, so that the air flow flows through the air channel. The flow direction of the air flow in the air channel is perpendicular to the normal direction of the membrane structure.

[0007] One embodiment of the present invention discloses an airflow generating package, which includes a membrane structure and a covering structure. The membrane structure operates at an ultrasonic frequency such that the airflow generating package generates an airflow. A plurality of protrusions are provided on the covering structure to enhance heat dissipation when the airflow generated by the membrane structure passes through.

[0008] One embodiment of the present invention discloses an airflow generating package, which includes a housing, a membrane structure, and a cavity. The membrane structure is disposed within the housing and operates at an ultrasonic frequency such that the airflow generating package generates an airflow. The cavity is formed on one side of the membrane structure. An air opening is formed on the sidewall of the housing.

[0009] After reading the detailed description of the embodiments with various drawings shown hereinafter, those skilled in the art should clearly understand the object of the present invention. Description of the Drawings

[0010] Figure 1 The cross-sectional schematic view of an airflow generating wafer according to an embodiment of the present invention is shown.

[0011] Figure 2 The cross-sectional schematic view of the common mode movement and differential mode movement of an airflow generating wafer according to an embodiment of the present invention is shown.

[0012] Figure 3 The cross-sectional schematic view of a semiconductor element having an airflow generating wafer according to an embodiment of the present invention is shown.

[0013] Figure 4 The cross-sectional schematic view of a semiconductor element having an airflow generating wafer according to another embodiment of the present invention is shown.

[0014] Figure 5 The cross-sectional schematic views of four designs of an airflow generating package having an airflow generating wafer according to some embodiments of the present invention are shown.

[0015] Figure 6 The cross-sectional schematic view of an example of the fourth design of an airflow generating package having an airflow generating wafer according to the present invention is shown.

[0016] Figure 7 The cross-sectional schematic view of another example of the fourth design of an airflow generating package having an airflow generating wafer according to the present invention is shown.

[0017] Figure 8 The cross-sectional schematic views of multiple examples of the second design of an airflow generating package having an airflow generating wafer according to the present invention are shown.

[0018] Figure 9The figure shows a cross-sectional schematic diagram of another example of the second design of the airflow generating package with an airflow generating wafer in the present invention.

[0019] Figure 10 The figure shows a cross-sectional schematic diagram of another example of the second design of the airflow generating package with an airflow generating wafer in the present invention.

[0020] Figure 11 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the first embodiment of the present invention.

[0021] Figure 12 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the second embodiment of the present invention.

[0022] Figure 13 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the third embodiment of the present invention.

[0023] Figure 14 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the fourth embodiment of the present invention.

[0024] Figure 15 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the fifth embodiment of the present invention.

[0025] Figure 16 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the sixth embodiment of the present invention.

[0026] Figure 17 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the seventh embodiment of the present invention.

[0027] Figure 18 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the eighth embodiment of the present invention.

[0028] Figure 19 The figure shows a cross-sectional schematic diagram of an example of a device with a heat source and an airflow generating wafer in the eighth embodiment of the present invention.

[0029] Figure 20 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the ninth embodiment of the present invention.

[0030] Figure 21 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the tenth embodiment of the present invention.

[0031] Figure 22 The figure shows a cross-sectional schematic diagram of a device with a heat source and an airflow generating wafer in the eleventh embodiment of the present invention.

[0032] Figure 23 The following is a schematic cross-sectional view of a device with a heat source and an air flow generating wafer in the twelfth embodiment of the present invention.

[0033] Figure 24 The following is a schematic view of a device according to an embodiment of the present invention.

[0034] Figure 25 The following is a schematic view of a device according to an embodiment of the present invention.

[0035] Figure 26 The following is a schematic view of a device according to an embodiment of the present invention.

[0036] Figure 27 The following is a schematic view of a device according to an embodiment of the present invention.

[0037] Figure 28 The following is a schematic view of the design of a covering structure according to some embodiments of the present invention.

[0038] Among them, the reference numerals are explained as follows:

[0039] 100, 200, 300, 400, 500, 600, 700, 800, 800’, 900, 1000, 1100, 1110, 1200, 1300, DV: Device

[0040] 110: Heat source

[0041] 120: Heat conducting element

[0042] 120’: Fin type heat conducting element

[0043] 121: Heat sink

[0044] 122: Space

[0045] 130: Housing

[0046] 132: First housing opening

[0047] 134: Second housing opening

[0048] 140: Spacer

[0049] 710: Plate body

[0050] 802: First device opening

[0051] 804: Second device opening

[0052] 806, 806’, AL: Air channel

[0053] 1400, 1500: Semiconductor device

[0054] 1600, CSV, CSV1, CSV2: Overlay Structure

[0055] AFC, AFC1, AFC2, AFC3, AFC4: Airflow Generating Wafer

[0056] AR: Anchoring Structure

[0057] AT: Actuator

[0058] AT1: First Actuating Portion

[0059] AT2: Second Actuating Portion

[0060] BSP, BSP1, BSP2, BSS: Substrate

[0061] BSPw, CSVw: Side Wall

[0062] CB: Conductive Ball

[0063] CHB: Cavity

[0064] CM: Connection Structure

[0065] CP, CP1, CP2, CP3, CP4: Wafer

[0066] CSVt: Top

[0067] CV: Conductive Structure

[0068] CY1, CY1_1, CY1_2, CY1_3, CY1_4: First Cavity

[0069] CY2, CY2_1, CY2_2: Second Cavity

[0070] DS1: First Design

[0071] DS2: Second Design

[0072] DS3: Third Design

[0073] DS4: Fourth Design

[0074] DSN1, DSN2: Design

[0075] EP: Empty Structure

[0076] FL: Flap

[0077] FL1: First Flap

[0078] FL2: Second Flap

[0079] FP: Flap Pair

[0080] FS: Membrane Structure

[0081] GP: Gap

[0082] ITP: Intermediary layer

[0083] OPP, OPP1, OPP2: Air opening

[0084] OPS1: First air opening

[0085] OPS2: Second air opening

[0086] OPV: Ventilation opening

[0087] PG, PG1, PG2, PG3, PG3’, PG4, PG5: Airflow generation package

[0088] PH: Package housing

[0089] PU1, PU2: Package unit

[0090] S1: Intermediate state

[0091] S2: Common mode motion

[0092] S3: Differential mode motion

[0093] SC, SC1, SC2: Semiconductor component

[0094] SF: Surface

[0095] SL: Slit

[0096] TP: Heat dissipation structure

[0097] TPP: Protrusion

[0098] X, Y, Z: Directions Detailed implementation manners

[0099] To enable those skilled in the art to further understand the present invention, the following will detail the preferred embodiments of the present invention, the typical materials or parameter ranges of key components, and illustrate the composition and technical effects to be achieved of the present invention in conjunction with the marked drawings. It should be noted that the drawings are all simplified schematic diagrams, and based on the current technology, the material and parameter ranges of key components are illustrated. Therefore, only the components and combination relationships related to the present invention are shown to provide a clearer description of the basic architecture, implementation method, or operation of the present invention. The actual components and layouts may be more complex, and the material or parameter ranges used may change with the development of future technologies. Additionally, for ease of illustration, the components shown in the various drawings of the present invention may not be drawn in actual numbers, shapes, and sizes in proportion, and the detailed situation can be adjusted according to the design requirements.

[0100] In the following description and claims, words such as "comprising", "containing", "having", etc. are open-ended terms, and thus should be construed to mean "including but not limited to...". Therefore, when the terms "comprising", "containing", and / or "having" are used in the description of the present invention, they specify the existence of the corresponding features, regions, steps, operations, and / or components, but do not exclude the existence of one or more corresponding features, regions, steps, operations, and / or components.

[0101] In the following description and claims, when a component or a film layer is referred to as "connected to" another component or film layer, it may be directly connected to this other component or film layer, or there may be an intervening component or film layer therebetween. When a component is referred to as "directly connected to" another component or film layer, there is no intervening component or film layer therebetween.

[0102] In the following description and claims, when "component A1 is formed by B1", B1 is present in the formation of component A1 or B1 is used in the formation of component A1, and the existence and use of one or more other features, regions, steps, operations, and / or components are not excluded in the formation of component A1.

[0103] In the following description and claims, the term "cavity" refers to an object having an empty space inside it. In the following description and claims, the term "hollow cavity" refers to the empty space within an object. For example, the hollow cavity of a cavity is the empty space existing within the cavity, and the cavity is the outer shell of this hollow cavity.

[0104] In the following description and claims, the term "substantially" means that there may or may not be a minor deviation. For example, the terms "substantially parallel", "substantially along" mean that the angle between two components may be less than or equal to a specific angle threshold, such as 10 degrees, 5 degrees, 3 degrees, or 1 degree. For example, the term "substantially aligned" means that the deviation between two components may be less than or equal to a specific difference threshold, such as 2 μm (micrometers) or 1 μm. For example, the term "substantially the same" means that the deviation is within a given value or a given range, such as within 10%, 5%, 3%, 2%, 1%, or 0.5%.

[0105] In the following description and claims, the term "horizontal direction" refers to the direction parallel to the horizontal plane, the term "horizontal plane" refers to the plane parallel to directions X and Y in the drawings (i.e., directions X and Y of the present invention can be regarded as the horizontal direction), the terms "vertical direction" and "top view direction" refer to the directions parallel to direction Z and perpendicular to the horizontal direction in the drawings, where directions X, Y, and Z are perpendicular to each other. In the following description and claims, the term "top view" refers to the viewing result along the vertical direction. In the following description and claims, the term "side view" refers to the viewing result along the horizontal direction. In the following description and claims, the term "section" refers to the viewing result of the structure cut along the vertical direction and viewed from the horizontal direction.

[0106] Ordinal numbers used in the description and claims, such as "first", "second", etc., are used to modify elements. They do not imply or represent any previous ordinal numbers for the (or these) elements, nor do they represent the order of one element and another element, or the order in the manufacturing method. The use of these ordinal numbers is only to clearly distinguish an element with a certain name from another element with the same name. The claims and the description may not use the same terms. Accordingly, the first component in the description may be the second component in the claims.

[0107] It should be noted that, without departing from the concept of the present invention, the features in several different embodiments can be replaced, recombined, and mixed to complete other embodiments. As long as the features between the embodiments do not violate the inventive concept or conflict with each other, they can be arbitrarily mixed and used.

[0108] In the present invention, the airflow generating element is used to generate airflow, and heat dissipation can be achieved and / or improved through the airflow caused by the airflow generating element. In the present invention, the airflow generating element can be designed according to requirements, and the airflow generating element can be formed by any suitable method. In the following, some embodiments of the airflow generating element will be described.

[0109] For example, the airflow generating element can be an airflow generating wafer, and the airflow generating wafer can be formed by a semiconductor process. For example, the airflow generating wafer can be a micro electro mechanical system (MEMS) wafer and include MEMS structures, but it is not limited thereto.

[0110] Please refer to Figure 1 and Figure 2 , Figure 1 which shows a sectional view of an airflow generating wafer according to an embodiment of the present invention. Figure 2 which shows a sectional view of the common-mode motion and differential-mode motion of an airflow generating wafer according to an embodiment of the present invention, where Figure 1The illustrated air flow generating wafer AFC is in an intermediate state S1. As Figure 1 and Figure 2 shown, the air flow generating wafer AFC is used to generate an air flow. In some embodiments, the air flow generating wafer AFC can be used to generate a plurality of air pulses, and the air flow can be composed of the air pulses, wherein the air flow generating wafer AFC can generate air pulses at any suitable pulse rate. For example, the air flow generating wafer AFC can generate air pulses at an ultrasonic frequency (ultrasonic pulse rate) higher than the maximum audible frequency of humans (e.g., 16 kilohertz (kHz), 20 kHz, or 22 kHz), such that the user cannot hear the operation of the air flow generating wafer AFC for generating the air flow and / or air pulses, but not limited thereto.

[0111] As Figure 1 shown, the air flow generating wafer AFC can include at least one anchoring structure AR and at least one membrane structure FS, and the membrane structure FS is anchored on the anchoring structure AR, wherein the anchoring structure AR can be disposed outside the membrane structure FS. The membrane structure FS and the anchoring structure AR can include any suitable materials. In some embodiments, the membrane structure FS and the anchoring structure AR can each include silicon (e.g., single crystal silicon or polycrystalline silicon), silicon compounds (e.g., silicon carbide, silicon oxide), germanium, germanium compounds, gallium, gallium compounds (e.g., gallium nitride, gallium arsenide), other suitable materials, or combinations thereof, but not limited thereto. In some embodiments, the membrane structure FS and the anchoring structure AR can have the same material.

[0112] During the operation of the air flow generating wafer AFC, the membrane structure FS can be actuated to move, and the anchoring structure AR can be stationary. In other words, during the operation of the air flow generating wafer AFC, the anchoring structure AR can be a fixed end (or fixed edge) relative to the membrane structure FS. In some embodiments, the membrane structure FS can be actuated to move upward and downward, but not limited thereto. In the present invention, the terms "move upward" and "move downward" mean that the membrane structure FS substantially moves along the direction Z. Additionally, "upward" can refer to the direction Z (i.e., the +Z direction), and "downward" can refer to the direction opposite to the direction Z (i.e., the -Z direction). In other words, the actuation direction of the membrane structure FS is parallel to the direction Z.

[0113] As Figure 1 shown, the membrane structure FS of the air flow generating wafer AFC includes at least one slit SL, and the membrane structure FS can be divided into a plurality of flaps FL through the slit SL (i.e., the flaps FL can be separated from each other through the slit SL, and the slit SL can be the boundary of the flaps FL), wherein the number of the flaps FL can be designed according to requirements. For example, as Figure 1As shown, the membrane structure FS can be separated into a first flap FL1 and a second flap FL2 through a slit SL. The first flap FL1 and the second flap FL2 can be arranged opposite to each other, and at least one slit SL can be between the first flap FL1 and the second flap FL2. It should be noted that the first flap FL1 and the second flap FL2 opposite to each other can form a flap pair FP in the membrane structure FS.

[0114] In Figure 1 , the flap FL of the membrane structure FS has at least one anchoring edge (or anchoring end) and at least one free edge (free end). The anchoring edge is anchored on the anchoring structure AR, and the free edge is not permanently anchored on any element in the air flow generating wafer AFC. The anchoring edge and the free edge of each flap FL can be designed according to requirements. For example (as Figure 1 shown), the slit SL can define a free edge of the first flap FL1 and a free edge of the second flap FL2. This free edge of the first flap FL1 can be relative to the anchoring edge of the first flap FL1, and this free edge of the second flap FL2 can be relative to the anchoring edge of the second flap FL2, but not limited thereto.

[0115] In the present invention, the number of slits SL included in the membrane structure FS can be adjusted according to requirements, and the slit SL can be arranged at any suitable position in the membrane structure FS and have any suitable top view pattern. For example, the slit SL can be a straight slit, a curved slit, a combination of straight slits, a combination of curved slits, or a combination of straight slits and curved slits.

[0116] The air flow generating wafer AFC can include an actuator AT for actuating the membrane structure FS to generate an air flow and / or an air pulse. The actuator AT can be arranged at any suitable position, and the position of the actuator AT can be related to the actuation mode of the actuator AT. For example, in Figure 1 , the actuator AT can overlap the membrane structure FS in the Z direction, but not limited thereto. For example, in Figure 1 , the actuator AT can be arranged on the membrane structure FS, but not limited thereto. For example, in Figure 1 , the actuator AT can contact the membrane structure FS, but not limited thereto.

[0117] As Figure 1 shown, the actuator AT can include a plurality of actuating parts arranged on a plurality of flaps FL of the membrane structure FS. For example (as Figure 1 shown), the actuator AT includes a first actuating part AT1 arranged on the first flap FL1 and a second actuating part AT2 arranged on the second flap FL2.

[0118] The actuator AT has a monotonic electromechanical conversion function for the movement of the membrane structure FS in the direction Z. In some embodiments, the actuator AT may include a piezoelectric actuator, an electrostatic actuator, a nanoscopic - electrostatic - drive (NED) actuator, an electromagnetic actuator, or any other suitable actuator, but not limited thereto. For example, in one embodiment, the actuator AT may include a piezoelectric actuator. The piezoelectric actuator may include, for example, two electrodes and a piezoelectric material layer disposed between the two electrodes (e.g., lead zirconate titanate (PZT)), where the piezoelectric material layer may actuate the membrane structure FS according to the drive signal received by the electrodes (e.g., drive voltage and / or the drive voltage difference between the two electrodes), but not limited thereto. For example, in another embodiment, the actuator AT may include an electromagnetic actuator (e.g., a planar coil), where the electromagnetic actuator may actuate the membrane structure FS according to the drive signal received (e.g., drive current) and the magnetic field (i.e., the membrane structure FS may be actuated by electromagnetic force), but not limited thereto. For example, in another embodiment, the actuator AT may include an electrostatic actuator (e.g., a conductive plate) or an NED actuator, where the electrostatic actuator or the NED actuator may actuate the membrane structure FS according to the drive signal received (e.g., drive voltage) and the electric field (i.e., the membrane structure FS may be actuated by electrostatic force), but not limited thereto. Hereinafter, the actuator AT may be, for example, a piezoelectric actuator.

[0119] For example, if the air - flow - generating wafer AFC is a MEMS wafer, the membrane structure FS, the anchoring structure AR, and the actuator AT may be MEMS structures in the MEMS wafer, but not limited thereto. Additionally, since the air - flow - generating wafer AFC can generate an air flow and / or an air pulse by actuating the membrane structure FS with the actuator AT, the air - flow - generating wafer AFC may be a bladeless fan, but not limited thereto.

[0120] In the present invention, the membrane structure FS (flap FL) can be actuated / controlled by an actuator AT to move upward or downward, such that an air vent opening OPV related to the slit SL is formed / opened or closed (i.e., the membrane structure FS is used to form / open or close the air vent opening OPV), wherein the air vent opening OPV is formed between two opposite sidewalls of the slit SL (i.e., the air vent opening OPV is formed between the first flap FL1 and the second flap FL2). In other words, the air vent opening OPV is formed due to the slit SL. In the case of "the air vent opening OPV is closed / sealed", it is difficult for air to pass through the space between the two opposite sidewalls of the slit SL, which means that the flow resistance of the air vent opening OPV is relatively large or greater than a threshold value. In the case of "the air vent opening OPV is formed / opened", air can easily pass through the space between the two opposite sidewalls of the slit SL, which means that the flow resistance of the air vent opening OPV is relatively small or less than another threshold value.

[0121] In the present invention, the air flow generating wafer AFC can generate an air flow and / or an air pulse by any suitable air flow generating means. For example, Figure 1 associated with Figure 2 the air flow generating means will be described below, and this air flow generating means can generate an air flow and / or an air pulse by changing the state of the air vent opening OPV and the air pressure on two opposite sides of the membrane structure FS.

[0122] As Figure 1 shown, in the intermediate state S1 of the air flow generating wafer AFC, the membrane structure FS (flap pair FP) can be actuated and maintained at a first position that is substantially horizontal (in cross-section) to temporarily close (or even temporarily seal) the air vent opening OPV, such that it is difficult for air to pass through the space between the two opposite sidewalls of the slit SL. In Figure 1 this case, two opposite sidewalls of the slit SL (i.e., the free edges of the first flap FL1 and the free edges of the second flap FL2) partially overlap or completely overlap with each other in the horizontal direction (such as the gap GP of the slit SL shown in Figure 1 ) to close the air vent opening OPV and have a relatively large flow resistance.

[0123] In Figure 1In this case, since the size of the gap GP of the slit SL (or the width of the slit SL) should be small enough, due to the viscous forces / resistance along the wall of the air flow path (which can be called the in-field boundary layer effect of fluid mechanics), the air flow through the gap GP (i.e., the narrow channel) can be highly damped. Therefore, in the intermediate state S1, the air flow through the gap GP is small enough and can be ignored. In other words, when the air flow generates the wafer AFC in the intermediate state S1, the ventilation opening OPV is closed and even sealed. The size of the gap GP of the slit SL (or the width of the slit SL) can be designed according to requirements. For example, the size of the gap GP of the slit SL (or the width of the slit SL) can be less than or equal to 5 micrometers (μm), less than or equal to 3 micrometers, less than or equal to 2 micrometers, or 1 to 2 micrometers, but not limited thereto. It should be noted that the size of the ventilation opening OPV in the intermediate state S1 can be the same as the size of the gap GP.

[0124] In Figure 2 this case, the membrane structure FS (flap pair FP) can be actuated to perform a common-mode motion S2, such that the first flap FL1 and the second flap FL2 are simultaneously actuated in the same direction. For example, the first flap FL1 and the second flap FL2 can be simultaneously actuated to move upward or downward along the direction Z. For example, at the end of the common-mode motion S2, the distance between the first flap FL1 and the first position is the same as the distance between the second flap FL2 and the first position.

[0125] As Figure 2 shown, when the membrane structure FS (flap pair FP) is actuated to perform a common-mode motion S2, the ventilation opening OPV can be temporarily closed (or even temporarily sealed), making it difficult for air to pass through the space between the two opposite side walls of the slit SL. In Figure 2 this case, the two opposite side walls of the slit SL (i.e., the free edges of the first flap FL1 and the second flap FL2) partially overlap or completely overlap with each other in the horizontal direction, so that the ventilation opening OPV is closed and has a large flow resistance.

[0126] When the membrane structure FS (flap pair FP) is actuated to perform a common-mode motion S2, since the ventilation opening OPV is temporarily closed and has a large flow resistance, the air pressures on the two opposite sides of the membrane structure FS will be different, resulting in a pressure difference. In other words, the membrane structure FS (flap pair FP) performs a common-mode motion S2 to form a pressure change.

[0127] In Figure 2In this case, the membrane structure FS (flap pair FP) can be actuated to perform a differential-mode motion S3 such that the first flap FL1 and the second flap FL2 are simultaneously actuated in opposite directions. For example, the first flap FL1 can be actuated to move downward and the second flap FL2 can be actuated to move upward (as Figure 2 shown), or the first flap FL1 can be actuated to move upward and the second flap FL2 can be actuated to move downward. For example, at the end of the differential-mode motion S3, the distance between the first flap FL1 and the first position is the same as the distance between the second flap FL2 and the first position.

[0128] As Figure 2 shown, when the membrane structure FS (flap pair FP) is actuated to perform a differential-mode motion S3, the ventilation opening OPV can be temporarily opened so that air can easily pass through the space between the two opposite sidewalls of the slit SL. In Figure 2 this case, the two opposite sidewalls of the slit SL (i.e., the free edges of the first flap FL1 and the second flap FL2) do not overlap each other in the horizontal direction so that the ventilation opening OPV is opened with a small flow resistance.

[0129] When the membrane structure FS (flap pair FP) is actuated to perform a differential-mode motion S3, if there is a pressure difference between the two opposite sides of the membrane structure FS, air will naturally flow through the ventilation opening OPV based on this pressure difference and the small flow resistance of the ventilation opening OPV, so that an air flow and / or an air pulse can be generated.

[0130] Accordingly, the air flow generation method of this embodiment can generate an air flow and / or an air pulse by actuating the membrane structure FS (flap pair FP) to perform a common-mode motion S2 and a differential-mode motion S3. For example, a time period of the air flow generation method of this embodiment can include four steps, but is not limited thereto. The first step of the air flow generation method can actuate the membrane structure FS (flap pair FP) to perform a common-mode motion S2 so that a pressure difference exists between the two opposite sides of the membrane structure FS. The second step of the air flow generation method can actuate the membrane structure FS (flap pair FP) to return to the intermediate state S1. The third step of the air flow generation method can actuate the membrane structure FS (flap pair FP) to perform a differential-mode motion S3 so that air naturally flows through the ventilation opening OPV based on this pressure difference and the small flow resistance of the ventilation opening OPV, thereby generating an air flow and / or an air pulse. The fourth step of the air flow generation method can actuate the membrane structure FS (flap pair FP) to return to the intermediate state S1. By repeating the time period of the air flow generation method of this embodiment, air pulses can continuously form an air flow.

[0131] The frequency of the above time period can be designed according to the pulse rate of the air pulse, and the frequency of the time period can be synchronized with the pulse rate of the air pulse. In the present invention, for one frequency / ratio to be synchronized with another frequency / ratio means that this frequency / ratio is the other frequency / ratio multiplied by a rational number (i.e., N / M, where N and M represent integers). In some embodiments, the frequency of this time period can be the same as the pulse rate of the air pulse. In some embodiments, the membrane structure FS (flap pair FP) performs a common-mode motion S2 to form an air pressure change at a pressure change frequency synchronized with the frequency of this time period, and the membrane structure FS (flap pair FP) performs a differential-mode motion S3 to form a ventilation opening OPV at an opening frequency synchronized with the frequency of this time period and the pressure change frequency. For example, the frequency of this time period, the pulse rate of the air pulse, the pressure change frequency, and the opening frequency can be the same as each other. For example, if the air flow generating wafer AFC generates air pulses at an ultrasonic frequency, the pressure change frequency and the opening frequency are synchronized with this ultrasonic frequency.

[0132] The flow direction of the air flow and the flow direction of the air pulse can be determined by the direction of the common-mode motion S2 performed by the membrane structure FS (flap pair FP). When the membrane structure FS (flap pair FP) is actuated to move upward (or downward) to perform only one type of common-mode motion S2 in the first step of multiple time periods, the types of air pressure differences in the first step of these time periods are the same as each other, thereby making the flow directions of the air pulses generated in these time periods (the third step) the same. Therefore, the air flow generating wafer AFC can generate single-ended (SE) air pulses or quasi-single-ended air pulses. And the air pulses are asymmetric.

[0133] In the present invention, the waveform of the single-ended air pulse or the waveform of the quasi-single-ended air pulse can mean that the waveform is (substantially) unipolar with respect to a certain level. For example, the single-ended air pulse or the quasi-single-ended air pulse can mean that the waveform is (substantially) unipolar with respect to the ambient pressure (such as 1 ATM). In other words, the single-ended air pulse or the quasi-single-ended air pulse constitutes a net air movement or a net air flow in a single direction.

[0134] The air flow generation method of the present invention is not limited to the above content. In a time period of the air flow generation method, the number of steps and the order of the actuation motions of the membrane structure FS (flap pair FP) can be designed according to requirements.

[0135] In another view, for any common-mode motion S2 of the flap pair FP, a pair of acoustic pressure waves is generated, one in the space on one side of the membrane structure FS and the other in the space on the opposite side of the membrane structure FS, and these two acoustic pressure waves have the same amplitude magnitude but opposite polarities. Therefore, when the ventilation opening OPV is opened, the air pressure differences between two air masses near the ventilation opening OPV will neutralize each other. Accordingly, when the timing at which the differential-mode motion S3 reaches its peak (i.e., the timing at which the ventilation opening OPV reaches its maximum opening) aligns with the timing at which the acceleration of the common-mode motion S2 reaches its peak, it is expected that the acoustic pressure generated by the common-mode motion S2 should be suppressed or eliminated due to the opening of the ventilation opening OPV, resulting in an automatic neutralization between the two acoustic pressures on the two opposite sides of the membrane structure FS, where these two acoustic pressures have the same magnitude but opposite polarities. This means that when the ventilation opening OPV is opened, the air-flow generating wafer AFC will generate (near) net-zero air pressure. Therefore, when the opening period of the ventilation opening OPV overlaps with the period of one of the (two) polarities of the acceleration of the common-mode motion S2 of the flap pair FP, the air-flow generating wafer AFC will generate a single-ended air pulse or a quasi-single-ended air pulse.

[0136] Additionally, by aligning the opening timing of the ventilation opening OPV with the timing of the acceleration of the common-mode motion S2 of the flap pair FP, the air-flow generating wafer AFC can generate an asymmetric air pulse.

[0137] In some embodiments, the membrane structure FS (flap pair FP) can be actuated to perform the common-mode motion S2 and the differential-mode motion S3 simultaneously, but not limited thereto. In some embodiments, the membrane structure FS can include other parts to enable the common-mode motion S2 and the differential-mode motion S3 to be performed by the membrane structure FS simultaneously, but not limited thereto.

[0138] In the present invention, the actuator AT can receive any suitable signal to actuate the membrane structure FS. In some embodiments, the membrane structure FS is actuated by modulating a driving signal (modulation-driving signal) SM to perform the common-mode motion S2 to form a pressure change, and the membrane structure FS is actuated by demodulating a driving signal (demodulation-driving signal) SV to perform the differential-mode motion S3 to form the ventilation opening OPV, where both the modulation driving signal SM and the demodulation driving signal SV are related to the output amplitude of the air pulse.

[0139] Additionally, the modulation frequency of the modulation drive signal SM and the demodulation frequency of the demodulation drive signal SV may be related to the pulse rate of the air pulse. For example, the modulation frequency and the demodulation frequency may be synchronized with the pulse rate of the air pulse, such that the modulation frequency and the demodulation frequency may be synchronized with the pressure change frequency of the air pressure change, the opening frequency of the ventilation opening OPV, and the frequency of the aforementioned time period, but not limited thereto.

[0140] In some embodiments, the actuator AT may receive the modulation drive signal SM and the demodulation drive signal SV at different times, but not limited thereto. In some embodiments, the actuator AT may include a plurality of sub-parts in a top view, one sub-part may receive the modulation drive signal SM, and another sub-part may receive the demodulation drive signal SV, but not limited thereto. In some embodiments, the actuator AT may include a first electrode and a second electrode, the first electrode may receive the modulation drive signal SM, and the second electrode may receive the demodulation drive signal SV, but not limited thereto.

[0141] Additionally, by controlling the modulation drive signal SM and / or the demodulation drive signal SV, the flow direction of the airflow (air pulse) generated by the airflow generating wafer AFC may be reversible. For detailed content, reference may be made to U.S. Patent Application No. 18 / 624,105 filed by the same applicant. For the sake of brevity, it will not be described herein.

[0142] Details of the airflow generating MEMS device (i.e., the airflow generating wafer AFC) manufactured by semiconductor processes (such as structure, drive signal, and movement) and its design / operation principle may be referred to U.S. Patent No. 11,943,585, U.S. Patent Application No. 18 / 321,757, and U.S. Patent Application No. 18 / 624,105 filed by the same applicant. Therefore, these U.S. patents and U.S. patent applications are incorporated herein by reference.

[0143] In some embodiments of the present invention, the airflow generating element may be the aforementioned airflow generating wafer AFC, or the airflow generating element may be an element including the aforementioned airflow generating wafer AFC. For example, the airflow generating element may be a semiconductor element having the aforementioned airflow generating wafer AFC, an airflow generating package having the aforementioned airflow generating wafer AFC, or other elements having the aforementioned airflow generating wafer AFC, but not limited thereto. Some embodiments of the semiconductor element SC having the aforementioned airflow generating wafer AFC are illustrated in Figure 3 and Figure 4 Some embodiments of the airflow generating package PG having the aforementioned airflow generating wafer AFC are illustrated in Figures 5 to 10 , but the semiconductor element and the airflow generating package are not limited to the following embodiments.

[0144] In other words, the air flow generating wafer AFC can be applied to the present application or various embodiments described below (e.g., air flow generating packages, semiconductor devices, electronic devices), and the features and characteristics of the air flow generating wafer AFC are included in the embodiments of the present application. It should be noted that a semiconductor device is a type of electronic device, and the semiconductor device can be or include a semiconductor element having the above-mentioned air flow generating wafer AFC, or the semiconductor device can be or include an air flow generating package having the above-mentioned air flow generating wafer AFC.

[0145] Please refer to Figure 3 , Figure 3 which shows a cross-sectional schematic view of a semiconductor element having an air flow generating wafer in an embodiment of the present invention. As Figure 3 shown, the semiconductor element SC1 including the above-mentioned air flow generating wafer AFC can be formed by semiconductor processes. For example, the semiconductor element SC1 can be a 2.5-dimensional (2.5D) integrated circuit or a three-dimensional (3D) integrated circuit (e.g., Figure 3 the semiconductor element SC1 shown is a 2.5D integrated circuit), but not limited thereto. For example, the semiconductor device including the semiconductor element SC1 can be a 2.5D semiconductor package, a 3D semiconductor package, or a chip-on-wafer-on-substrate (CoWoS) package, or the semiconductor device including the semiconductor element SC1 can be disposed in a 2.5D semiconductor package, a 3D semiconductor package, or a CoWoS package.

[0146] In Figure 3 the semiconductor element SC1 shown, the air flow generating wafer AFC can be disposed on the substrate BSS of the semiconductor element SC1, where the substrate BSS of the semiconductor element SC1 can be a wafer or an interposer (e.g., a wafer layer). For example, the substrate BSS can include silicon, germanium, any other suitable semiconductor material, or a combination thereof. In Figure 3 , the substrate BSS can be an interposer (e.g., a silicon interposer), and conductive structures CV (e.g., through silicon vias (TSVs)) are disposed in the substrate BSS, and the conductive structures CV are used to electrically connect between two electronic components respectively disposed on two opposite sides of the substrate BSS, but not limited thereto.

[0147] In Figure 3 , the substrate BSS can have an upper surface parallel to directions X and Y (i.e., the upper surface of the substrate BSS can be a horizontal plane), and the normal direction of the upper surface of the substrate BSS can be parallel to direction Z.

[0148] The semiconductor component SC1 may further include at least one wafer CP, disposed on the substrate BSS and adjacent to the airflow generating wafer AFC. In Figure 3 , the semiconductor component SC1 may include four wafers CP1, CP2, CP3, and CP4. The wafers CP1 and CP3 may be disposed on the substrate BSS. The wafer CP2 may be disposed (stacked) on the wafer CP1 and electrically connected to the wafer CP1 through at least one connection structure CM (such as solder or conductive balls). The wafer CP4 may be disposed (stacked) on the wafer CP3 and electrically connected to the wafer CP3 through at least one connection structure CM (such as solder or conductive balls), but not limited thereto. It should be noted that the airflow generating wafer AFC can be used to dissipate the heat generated by the wafer CP. It should be noted that this connection structure CM (such as solder or conductive balls) can help dissipate heat and improve the heat dissipation effect of the semiconductor component SC1 because it has a heat conduction effect (i.e., the conductive balls can also be called heat conduction balls).

[0149] In the present invention, the semiconductor component SC1 may include at least one first air opening OPS1 and at least one second air opening OPS2. The airflow generated by the airflow generating wafer AFC can flow through the first air opening OPS1 and the second air opening OPS2. Among them, the airflow can flow into the semiconductor component SC1 through the first air opening OPS1 or the second air opening OPS2 (i.e., one of the first air opening OPS1 and the second air opening OPS2 can be the airflow inlet), and the airflow can flow out of the semiconductor component SC1 through the first air opening OPS1 or the second air opening OPS2 (i.e., the other of the first air opening OPS1 and the second air opening OPS2 can be the airflow outlet). In some embodiments, since the flow direction of the airflow (air pulse) generated by the airflow generating wafer AFC is reversible, when the airflow (air pulse) reverses, the airflow inlet and the airflow outlet will be interchanged.

[0150] The first air opening OPS1 and the second air opening OPS2 can be designed according to requirements. The number of the first air opening OPS1 and the number of the second air opening OPS2 can be designed according to requirements. For example, in Figure 3 , the semiconductor component SC1 may include one first air opening OPS1 and one second air opening OPS2. The substrate BSS may have the first air opening OPS1 overlapping the airflow generating wafer AFC (i.e., the first air opening OPS1 is formed at the bottom of the airflow generating wafer AFC). The ventilation opening OPV (i.e., the slit SL) of the airflow generating wafer AFC can be the second air opening OPS2 (i.e., the second air opening OPS2 is formed at the top of the airflow generating wafer AFC), but not limited thereto.

[0151] Moreover, the designs of the first air opening OPS1 and the second air opening OPS2 can be related to the path of the air flow in the semiconductor element SC1. For example, the direction of the air flow passing through the first air opening OPS1 can be parallel or perpendicular to the direction of the air flow passing through the second air opening OPS2 (e.g., in Figure 3 the direction of the air flow passing through the first air opening OPS1 can be parallel to the direction of the air flow passing through the second air opening OPS2), but not limited thereto.

[0152] Please refer to Figure 4 , Figure 4 which shows a cross-sectional schematic view of a semiconductor element with an air flow generating wafer in another embodiment of the present invention. As Figure 4 shown, the difference between this embodiment and the semiconductor element SC1 shown in Figure 3 lies in the type of the semiconductor element SC2 of this embodiment. For example, in Figure 4 the semiconductor element SC2 can be a 3D integrated circuit, such that the substrate BSS on which the air flow generating wafer AFC is disposed (stacked) can be the wafer CP and / or the interposer ITP, and the air flow generating wafer AFC can be electrically connected to the wafer CP through at least one connection structure CM (e.g., solder or conductive balls), but not limited thereto. In Figure 4 the connection structure CM can be disposed between the air flow generating wafer AFC and the wafer CP.

[0153] In addition, the designs of the first air opening OPS1 and the second air opening OPS2 of this embodiment are different from those of the semiconductor element SC1 shown in Figure 3 . For example, in Figure 4 the first air opening OPS1 can be the space formed between the wafer CP (substrate BSS) and the air flow generating wafer AFC and caused by the connection structure CM (e.g., the first air opening OPS1 is located behind the connection structure CM in Figure 4 ), the vent opening OPV (i.e., the slit SL) of the air flow generating wafer AFC can be the second air opening OPS2, and the direction of the air flow passing through the first air opening OPS1 can be perpendicular to the direction of the air flow passing through the second air opening OPS2, but not limited thereto. Similarly, the first air opening OPS1 is formed at the bottom of the air flow generating wafer AFC, and the second air opening OPS2 is formed at the top of the air flow generating wafer AFC.

[0154] Please refer to Figure 5 , Figure 5 which shows cross-sectional schematic views of four designs of an air flow generating package with an air flow generating wafer in some embodiments of the present invention. It should be noted that the air flow generating wafer AFC can be directly packaged in the air flow generating package PG (e.g., in Figure 5as shown), or the airflow generating wafer AFC may be a wafer of a semiconductor component SC (such as, Figure 3 the 2.5D integrated circuit shown in Figure 4 or the 3D integrated circuit shown in

[0155] ), encapsulated in an airflow generating package PG, where the airflow generating package PG may be a semiconductor device. In the present invention, the airflow generating package PG may be any suitable package or applied to any suitable package to encapsulate the airflow generating wafer AFC or the semiconductor component SC having the airflow generating wafer AFC in any suitable manner. For example, the airflow generating package PG may be or applied in a chip scale package (CSP), a 2.5D semiconductor package, a 3D semiconductor package, a CoWoS package, a ball grid array (BGA) package or other suitable packages, and the structure of the airflow generating package PG and the components included in the airflow generating package PG may correspond to the type of the airflow generating package PG. For example (not shown in the figure), the airflow generating wafer AFC may be arranged in a flip-chip manner, but not limited thereto.

[0156] In Figure 5 the airflow generating package PG shown in

[0157] As Figure 5As shown, the package housing PH of the airflow generating package PG may include a substrate BSP, where the airflow generating wafer AFC may be disposed on the substrate BSP, and a first cavity CY1 may exist between the substrate BSP and the membrane structure FS of the airflow generating wafer AFC. The substrate BSP may be a rigid substrate or a flexible substrate, where the substrate BSP may include glass, plastic, quartz, sapphire, metal, polymer (e.g., polyimide (PI), polyethylene terephthalate (PET)), any suitable material, or a combination thereof. In one example, the substrate BSP may be a circuit board including a laminate (e.g., copper clad laminate (CCL)), a land grid array board (LGA board), or any other suitable board including a conductive material, but not limited thereto.

[0158] In Figure 5 , the substrate BSP may have an upper surface parallel to the directions X and Y (i.e., the upper surface of the substrate BSP may be a horizontal plane), and the normal direction of the upper surface of the substrate BSP may be parallel to the direction Z.

[0159] In the present invention, the airflow generating wafer AFC or the semiconductor component SC having the airflow generating wafer AFC may be electrically connected to the conductive member in the substrate BSP through a connection structure having a conductive material. For example, the connection structure may be solder, conductive balls (such as the conductive balls used in BGA packages), or other structures, but not limited thereto. It should be noted that this connection structure (such as solder or conductive balls) can help dissipate heat due to its heat conduction effect, thereby improving the heat dissipation effect of the airflow generating package PG.

[0160] As Figure 5 shown, the package housing PH of the airflow generating package PG may include a covering structure CSV for covering and protecting the airflow generating wafer AFC or the semiconductor component SC having the airflow generating wafer AFC, where a second cavity CY2 may exist between the covering structure CSV and the membrane structure FS of the airflow generating wafer AFC. In Figure 5 , the covering structure CSV may be disposed on the substrate BSP, and the airflow generating wafer AFC may be disposed between the substrate BSP and the covering structure CSV. For example, the covering structure CSV may include glass, plastic, quartz, sapphire, metal, polymer, any suitable material, or a combination thereof (e.g., Figure 5 as shown, the covering structure CSV may include metal), or the covering structure CSV may be a metal cover.

[0161] In Figure 5In it, the covering structure CSV may include a top CSVt and at least one side wall CSVw, where the side wall CSVw is between the substrate BSP and the top CSVt. For example (as Figure 5 shown), the covering structure CSV including the top CSVt and the side wall CSVw may be a one-piece structure (such as a lid), but not limited thereto. For example (as Figure 5 shown), the substrate BSP and the top CSVt may be substantially parallel to each other, and the side wall CSVw may surround the air flow generating wafer AFC, but not limited thereto.

[0162] In the present invention, the encapsulation housing PH of the air flow generating package PG may have a plurality of air openings OPP, and the air flow generated by the air flow generating wafer AFC may flow through the air openings OPP. In some embodiments, the encapsulation housing PH may have at least one air opening OPP1 connected to the first cavity CY1 and at least one air opening OPP2 connected to the second cavity CY2, where the air flow may flow into the air flow generating package PG through the air opening OPP1 or the air opening OPP2 (i.e., one of the air openings OPP1 and OPP2 may be an air flow inlet), and the air flow may flow out of the air flow generating package PG through the air opening OPP1 or the air opening OPP2 (i.e., the other of the air openings OPP1 and OPP2 may be an air flow outlet). In some embodiments, since the flow direction of the air flow (air pulse) generated by the air flow generating wafer AFC is reversible, when the air flow (air pulse) reverses, the air flow inlet and the air flow outlet will be interchanged.

[0163] In some embodiments, the substrate BSP and the covering structure CSV may be formed of the same material. That is to say, the substrate BSP may be regarded as a part of the covering structure CSV, and vice versa. The substrate BSP and the covering structure CSV may both be regarded as parts of the encapsulation housing PH.

[0164] The air openings OPP may be formed on the top, bottom or side wall of the encapsulation housing PH. In this embodiment, the air openings OPP1 and OPP2 may be designed according to requirements, the number of the air openings OPP1 and the number of the air openings OPP2 may be designed according to requirements, where the design of the air openings OPP1 and OPP2 may be related to the path of the air flow in the air flow generating package PG. For example, the direction of the air flow flowing through the air opening OPP1 may be parallel or perpendicular to the direction of the air flow flowing through the air opening OPP2, but not limited thereto. Four designs of the air flow generating package PG shown in Figure 5 will be described below.

[0165] In Figure 5In a first design DS1 of the airflow generating package PG shown, the substrate BSP may have an air opening OPP1 overlapping the airflow generating wafer AFC, and the top CSVt of the covering structure CSV may have an air opening OPP2 such that the direction of the airflow passing through the air opening OPP1 may be parallel to the direction of the airflow passing through the air opening OPP2, but not limited thereto.

[0166] In Figure 5 In a second design DS2 of the airflow generating package PG shown, the substrate BSP may have an air opening OPP1 overlapping the airflow generating wafer AFC, and the side wall CSVw of the covering structure CSV may have an air opening OPP2 such that the direction of the airflow passing through the air opening OPP1 may be perpendicular to the direction of the airflow passing through the air opening OPP2, but not limited thereto.

[0167] In Figure 5 In a third design DS3 of the airflow generating package PG shown, the side wall CSVw of the covering structure CSV may have an air opening OPP1, and the airflow generating wafer AFC (e.g., the anchoring structure AR of the airflow generating wafer AFC) may have an air passage AL connecting the air opening OPP1 and the first cavity CY1, and the top CSVt of the covering structure CSV may have an air opening OPP2 such that the direction of the airflow passing through the air opening OPP1 may be perpendicular to the direction of the airflow passing through the air opening OPP2, but not limited thereto. It should be noted that the airflow passes through the air passage AL during the operation of the airflow generating package PG, and the direction of the airflow in the air passage AL is perpendicular to the direction Z (e.g., the normal direction of the substrate BSP or the normal direction of the film structure FS).

[0168] In Figure 5 In a fourth design DS4 of the airflow generating package PG shown, the side surface of the substrate BSP may have an air opening OPP1, and the substrate BSP may have an empty structure EP connecting the air opening OPP1 and the first cavity CY1, and the top CSVt of the covering structure CSV may have an air opening OPP2 such that the direction of the airflow passing through the air opening OPP1 may be perpendicular to the direction of the airflow passing through the air opening OPP2, but not limited thereto. For example, the empty structure EP may be an air passage (e.g., Figure 6 the structure shown), a cavity (e.g., Figure 7the structure shown) or other suitable structures, but not limited thereto. It should be noted that the air flow passes through the air channel (i.e., an empty structure EP) during the operation of generating the air flow generating package PG, and the flow direction of the air flow in the air channel is perpendicular to the direction Z (e.g., the normal direction of the substrate BSP or the normal direction of the film structure FS). It should be noted that the air flow may or may not pass through the cavity (i.e., an empty structure EP) during the operation of generating the air flow generating package PG.

[0169] In the present invention, the air flow generating package PG is not limited to Figure 5 the four designs shown. Figures 6 to 10 Some variation examples of the above four designs are illustrated.

[0170] In Figure 6 the shown air flow generating package PG1 (which is a variation example of the fourth design DS4), the empty structure EP of the substrate BSP can serve as the air channel AL and is connected between the air opening OPP1 and the first cavity CY1. Additionally, the top CSVt of the covering structure CSV may have a plurality of air openings OPP2, but not limited thereto. Furthermore, in Figure 6 the air flow generating wafer AFC may include a plurality of film structures FS, and each film structure FS may include a plurality of flap pairs FP (in Figure 6 one of the shown film structures FS, three flaps FL respectively belong to three different flap pairs FP) to enhance the air flow generated by the air flow generating wafer AFC, but not limited thereto.

[0171] In Figure 6 the air flow generating package PG1 can be disposed on the surface SF of a heat source or a heat sink and / or in direct contact with the surface SF of the heat source or the heat sink to assist in the dissipation of heat of the heat source / heat sink.

[0172] In Figure 7 the shown air flow generating package PG2 (which is another variation example of the fourth design DS4), the empty structure EP of the substrate BSP can serve as the cavity CHB and is connected between the air opening OPP1 and the first cavity CY1 to enhance the air flow generated by the air flow generating wafer AFC. For example, the substrate BSP can be an integral structure or can be formed by a plurality of sub-structures (such as, a plurality of substrates). In Figure 7 the empty structure EP (i.e., the cavity) is formed on one side of the film structure FS, and the air opening OPP1 is formed on the side wall BSPw of the substrate BSP.

[0173] In other words, due to the existence of the cavity CHB, the air flow generating package PG2 can have a relatively large back volume. By appropriately designing the size of the cavity CHB, Helmholtz resonance (HHR) can be formed within the cavity CHB (or the back volume of the air flow generating package PG2), and the air flow generating package PG2 can obtain ultrasonic acoustic characteristics therein, thus having more advantages in generating air flow.

[0174] In Figure 8 the air flow generating package PG3 (which is a variation example of the second design DS2) shown, the air flow generating package PG3 can have a plurality of air flow generating wafers AFC1 and AFC2, wherein the air flow generating wafer AFC1 can be connected to the substrate BSP, and the air flow generating wafer AFC2 can be connected to the covering structure CSV. For example, the air flow generating wafers AFC1 and AFC2 can overlap in the Z direction (e.g., the air flow generating wafers AFC1 and AFC2 can be stacked on top of each other), but this is not limiting. In Figure 8 it, a first cavity CY1_1 can exist between the substrate BSP and the air flow generating wafer AFC1, a first cavity CY1_2 can exist between the covering structure CSV and the air flow generating wafer AFC2, and a second cavity CY2 can exist between the two air flow generating wafers AFC1 and AFC2.

[0175] As Figure 8 shown, the encapsulation housing PH can have a plurality of air openings OPP1 and at least one air opening OPP2. The air opening OPP1 is connected to the first cavity CY1_1 and / or the first cavity CY1_2, and the air opening OPP2 is connected to the second cavity CY2. For example, in the air flow generating package PG3, the substrate BSP can have an air opening OPP1 that overlaps the air flow generating wafer AFC1 and is connected to the first cavity CY1_1. The top CSVt of the covering structure CSV can have another air opening OPP1 that overlaps the air flow generating wafer AFC2 and is connected to the first cavity CY1_2. The two side walls CSVw of the covering structure CSV can have two air openings OPP2 that are opposite to each other and are connected to the second cavity CY2, such that the direction of the air flow passing through the air opening OPP1 can be perpendicular to the direction of the air flow passing through the air opening OPP2, but this is not limiting.

[0176] In Figure 8 the air flow generating package PG3’ (which is another variation example of the second design DS2) shown, compared with the air flow generating package PG3, the side wall CSVw of the covering structure CSV of the air flow generating package PG3’ can have an air opening OPP2, but this is not limiting.

[0177] In the air flow generating package PG3 and the air flow generating package PG3', the side wall CSVw of the covering structure CSV can be the side wall of the package housing PH, and the top CSVt and the base BSP of the covering structure CSV can be the top and the bottom of the package housing PH, respectively.

[0178] In the air flow generating package PG3, the air flow generating package PG3', or a variant thereof, the air flow generating wafer AFC1 and / or the air flow generating wafer AFC2 can be arranged in a flip-chip manner. For example, one of the air flow generating wafers AFC1 and AFC2 is arranged in a flip-chip manner, but not limited thereto.

[0179] In Figure 8 stacking two or more air flow generating wafers helps to increase the total amount of air flow generated by the air flow generating package, and this design is also within the scope of the present invention.

[0180] In Figure 9 the air flow generating package PG4 shown (which is a variant example of the second design DS2), the air flow generating package PG4 can have a plurality of package units PU1 and PU2 connected to each other, where the package unit PU1 can include at least one air flow generating wafer AFC (e.g., Figure 9 two air flow generating wafers AFC1 and AFC2 in Figure 9 ), a base BSP1, and a covering structure CSV1, and the package unit PU2 can include at least one air flow generating wafer AFC (e.g., Figure 9 two air flow generating wafers AFC3 and AFC4 in

[0181] such as Figure 9As shown, the encapsulation housing PH may have a plurality of air openings OPP1 and a plurality of air openings OPP2. The air opening OPP1 is connected to one or more of the first cavities CY1_1, CY1_2, CY1_3, CY1_4, and the air opening OPP2 is connected to one of the second cavities CY2_1, CY2_2. For example, one air opening OPP1 may exist between two substrates BSP1, BSP2 and is connected to the first cavities CY1_1, CY1_3 (this air opening OPP1 is formed by thinning the two substrates BSP1, BSP2). The covering structure CSV1 may have another air opening OPP1 that overlaps the airflow generating wafer AFC2 and is connected to the first cavity CY1_2. The covering structure CSV2 may have yet another air opening OPP1 that overlaps the airflow generating wafer AFC4 and is connected to the first cavity CY1_4. The covering structure CSV1 may have an air opening OPP2 connected to the second cavity CY2_1, and the covering structure CSV2 may have another air opening OPP2 connected to the second cavity CY2_2, such that the direction of the airflow passing through one of the air openings OPP1 may be parallel or perpendicular to the direction of the airflow passing through the air opening OPP2, but not limited thereto. Accordingly, in Figure 9 due to the increase in the number of airflow generating wafers AFC, the airflow generated by the airflow generating wafers AFC is enhanced.

[0182] In Figure 10 the airflow generating package PG5 shown (which is another variation example of the second design DS2), the airflow generating package PG5 may further include a heat dissipation structure TP, connected to the covering structure CSV, to enhance the heat dissipation effect caused by the airflow generating package PG5. In some embodiments, the heat dissipation structure TP may be disposed on the outer side or the inner side of the covering structure CSV (e.g., Figure 10 the heat dissipation structure TP shown may be disposed on the outer side of the covering structure CSV). For example, in Figure 10 the heat dissipation structure TP may have a plurality of heat dissipation units, distributed on the covering structure CSV, but not limited thereto. In some embodiments, the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be notches or protrusions (or projections) of the covering structure CSV (e.g., Figure 28 the integrated structure shown includes the heat dissipation structure TP and the covering structure CSV), or the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be adhered to the covering structure CSV (e.g., the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be heat sinks, heat spreaders, etc.).

[0183] In the present invention, an airflow generating element (e.g., an airflow generating wafer AFC, a semiconductor element SC having the airflow generating wafer AFC, or an airflow generating package PG having the airflow generating wafer AFC) can be used in a device DV such that the airflow generated by the airflow generating element (i.e., the airflow generating wafer AFC) can dissipate the heat generated by the elements in this device DV. Therefore, the heat dissipation performance of the device DV can be improved by the airflow created by the airflow generating element. For example, the device DV can be an electronic device (such as a smart phone, a tablet computer, or other suitable electronic devices). Some embodiments of the device DV having the airflow generating element are illustrated in Figures 11 to 17 wherein Figures 11 to 17 the illustrated airflow generating element is an airflow generating package PG having the airflow generating wafer AFC, but the device DV is not limited to the following embodiments.

[0184] Please refer to Figure 11 , Figure 11 which shows a cross-sectional schematic view of a device having a heat source and an airflow generating wafer in the first embodiment of the present invention. In Figure 11 wherein Figure 11 the illustrated airflow generating package PG can be a variant embodiment belonging to the first design DS1 shown in Figure 5 wherein the substrate BSP can have an air opening OPP1, and the top CSVt of the covering structure CSV can have a plurality of air openings OPP2 such that the direction of the airflow passing through the air opening OPP1 can be parallel to the direction of the airflow passing through the air opening OPP2, but is not limited thereto.

[0185] As Figure 11 shown, the device 100 includes a heat source (or operating element) 110, wherein the heat source (operating element) 110 generates heat during operation, and the airflow generating package PG in the device 100 is used to generate an airflow to dissipate the heat generated by the heat source 110. In the present invention, the heat source 110 can be any suitable element that can generate heat during operation. For example, the heat source 110 can be an operating element formed by a semiconductor process (i.e., the operating element can also be referred to as a heat generating wafer), wherein the operating element can be a wafer, a 2.5D integrated circuit, a 3D integrated circuit, but is not limited thereto. For example, the operating element can be or include an application processor (AP), a central processing unit (CPU), a graphic processing unit (GPU), a tensor processing unit (TPU), an XPU, or a memory, but is not limited thereto. For example, the normal direction of the upper surface of the heat source 110 can be parallel to the direction Z, but is not limited thereto.

[0186] In the present invention, the reference numeral "110" may be used to represent a heat source, a heat generating wafer, and an operating element. The terms "heat source", "heat generating wafer", and "operating element" may be used interchangeably.

[0187] As Figure 11 shown, the device 100 may include a heat conducting element 120, which is disposed adjacent to the heat source 110 and is used to conduct the heat generated by the heat source 110. For example, the heat source 110 may be connected to the heat conducting element 120 to improve the heat dissipation effect (e.g., heat dissipation efficiency). The heat conducting element 120 may be any suitable element capable of conducting heat. For example, the heat conducting element 120 may include a heat sink, a radiator, a thermal interface material, an interposer, a heat pipe, a vapor chamber, other suitable elements, or a combination thereof (e.g., Figure 11 as shown, the heat conducting element 120 may be a radiator), but is not limited thereto.

[0188] As Figure 11 shown, an air flow generating package PG (i.e., an air flow generating element) may be disposed adjacent to the heat conducting element 120, such that the heat generated by the heat source 110 can be dissipated through the heat conducting element 120 and the air flow generated by the air flow generating package PG. In some embodiments, the air flow generating package PG may be disposed on the heat source 110 and / or the heat conducting element 120, such that the membrane structure FS of the air flow generating package PG can generate an air flow to dissipate the heat of the heat source 110 and / or the heat conducting element 120. For example, in Figure 11 , the air flow generating package PG may be disposed on the heat conducting element 120 and overlap the heat conducting element 120, but is not limited thereto. For example, in Figure 11 , the membrane structure FS of the air flow generating package PG may face the heat conducting element 120. For example, in Figure 11 , the covering structure CSV of the air flow generating package PG may be disposed between the heat conducting element 120 and the membrane structure FS, but is not limited thereto. For example, in Figure 11 , the heat source 110 and the air flow generating package PG may be disposed on the same side of the heat conducting element 120.

[0189] In this embodiment, the heat generated by the heat source 110 may first be conducted and dissipated through the heat conducting element 120, and then, the air flow generated by the air flow generating package PG may cause cold air to flow into the device 100 and hot air to flow out of the device 100 to dissipate the heat of the heat conducting element 120. In Figure 11 , the air flow generating package PG may be used to dissipate the heat of the portion of the heat conducting element 120 that overlaps the air flow generating package PG, but is not limited thereto.

[0190] AsFigure 11 As shown, the device 100 may include a housing 130. A heat source 110, a heat conducting element 120, and an air flow generating package PG (i.e., an air flow generating element) are disposed in the housing 130 such that the heat conducting element 120 and the air flow generating package PG can be protected by the housing 130. In Figure 11 this case, the housing 130 may be the outermost structure of the device 100.

[0191] In this embodiment, the heat conducting element 120 may be disposed in the housing 130 over a large range to improve the heat dissipation effect of the heat conducting element 120. Additionally, based on the presence of the heat conducting element 120, the positions of the heat source 110 and the air flow generating package PG can be designed elastically. For example, in Figure 11 this case, the heat source 110 and the air flow generating package PG may be disposed in different regions in the housing 130 and do not overlap in the Z direction (e.g., in Figure 11 this case, the heat source 110 and the air flow generating package PG may be separated from each other by a spacer 140), and the heat generated by the heat source 110 can still dissipate through the air flow generating package PG due to the presence of the heat conducting element 120, but this is not limiting. It should be noted that the spacer 140 used to separate the air flow generating package PG and the heat source 110 can prevent the air flow (or the air flow direction) from being too diverse, which helps to improve the heat dissipation efficiency and technical effect. For example, in Figure 11 this case, the air flow generating package PG may be disposed beside the edge of the device 100 (or the air flow generating package PG is disposed adjacent to the edge of the device 100), and the heat conducting element 120 may extend from the heat source 110 towards the air flow generating package PG such that the air flow generated by the air flow generating package PG can flow through the heat conducting element 120.

[0192] In Figure 11 this case, the housing 130 may include at least one first housing opening 132 related to the air opening OPP1 and at least one second housing opening 134 related to the air opening OPP2. The air flow generated by the air flow generating wafer AFC in the air flow generating package PG can flow through the first housing opening 132 and the second housing opening 134, where the air flow can flow into the device 100 through the first housing opening 132 or the second housing opening 134 (i.e., one of the first housing opening 132 and the second housing opening 134 can be the device air inlet), the air flow can flow out of the device 100 through the first housing opening 132 or the second housing opening 134 (i.e., the other of the first housing opening 132 and the second housing opening 134 can be the device air outlet), and the first housing opening 132 and the second housing opening 134 can be disposed beside the same edge or different edges of the device 100. Since the flow direction of the air flow generated by the air flow generating wafer AFC in the air flow generating package PG is reversible, when the air flow reverses, the device air inlet and the device air outlet will be interchanged.

[0193] In the first flow direction of the air flow of the device 100, the air flow sequentially passes through the first housing opening 132, the air opening OPP1, the membrane structure FS of the air flow generating wafer AFC, the air opening OPP2, and the second housing opening 134. In the second flow direction of the air flow of the device 100, the air flow sequentially passes through the second housing opening 134, the air opening OPP2, the membrane structure FS of the air flow generating wafer AFC, the air opening OPP1, and the first housing opening 132.

[0194] The first housing opening 132 and the second housing opening 134 can be designed according to requirements, and the number of the first housing opening 132 and the number of the second housing opening 134 can be designed according to requirements, wherein the design of the first housing opening 132 and the second housing opening 134 can be related to the path of the air flow in the device 100. For example, the direction of the air flow passing through the first housing opening 132 can be parallel or perpendicular to the direction of the air flow passing through the second housing opening 134 (in Figure 11 the direction of the air flow passing through the first housing opening 132 can be parallel to the direction of the air flow passing through the second housing opening 134), but not limited thereto.

[0195] The direction of the air flow passing through the air opening OPP1, the direction of the air flow passing through the air opening OPP2, the direction of the air flow passing through the first housing opening 132, and the direction of the air flow passing through the second housing opening 134 can be designed according to requirements. For example, the direction of the air flow passing through the air opening OPP1 and the direction of the air flow passing through the air opening OPP2 can be perpendicular to the direction of the air flow passing through the first housing opening 132 and the direction of the air flow passing through the second housing opening 134, but not limited thereto.

[0196] Please refer to Figure 12 , Figure 12 which shows a cross-sectional schematic view of the device with a heat source and an air flow generating wafer in the second embodiment of the present invention, wherein Figure 12 the shown air flow generating package PG can be a variant embodiment belonging to Figure 5 the first design DS1 shown. As Figure 12 shown, the difference between this embodiment and the embodiment shown in Figure 11 is the type of the heat conducting element 120 of the device 200. In Figure 12 the heat conducting element 120 can be a heat conducting tube or a vapor chamber, wherein there is a space 122 filled with liquid and / or gas inside the heat conducting element 120.

[0197] As Figure 12 shown, the difference between this embodiment and Figure 11Another difference of the illustrated embodiment lies in the position of the first housing opening 132. Thus, the directions of the airflows passing through the air openings OPP1 and OPP2 and the airflow passing through the first housing opening 132 may be perpendicular to the direction of the airflow passing through the second housing opening 134, but not limited thereto.

[0198] Please refer to Figure 13 , Figure 13 FIG. shows a cross-sectional schematic view of a device with a heat source and an airflow generating wafer in the third embodiment of the present invention, where Figure 13 the illustrated airflow generating package PG may be a variant embodiment belonging to Figure 5 the second design DS2 shown. As Figure 13 shown, the difference between this embodiment and Figure 11 the illustrated embodiment lies in the position of the heat source 110 of the device 300. In Figure 13 , the heat source 110, the heat conducting element 120, and the airflow generating package PG (i.e., the airflow generating element) may overlap in the Z direction, and the heat conducting element 120 may be disposed between the heat source 110 and the airflow generating package PG in the Z direction. Additionally, in Figure 13 , the substrate BSP of the airflow generating package PG may be disposed between the heat conducting element 120 and the membrane structure FS, but not limited thereto.

[0199] Please refer to Figure 14 , Figure 14 FIG. shows a cross-sectional schematic view of a device with a heat source and an airflow generating wafer in the fourth embodiment of the present invention, where Figure 14 the illustrated airflow generating package PG may be a variant embodiment belonging to Figure 5 the second design DS2 shown. As Figure 14 shown, the difference between this embodiment and Figure 11 the illustrated embodiment lies in that the heat conducting element 120 of the device 400 is connected to the covering structure CSV of the airflow generating package PG, such that the heat energy of the heat conducting element 120 is directly conducted to the airflow generating package PG. For example (not shown in Figure 14 ), the heat conducting element 120 may be adhered to the covering structure CSV of the airflow generating package PG through a material with a high thermal conductivity (such as a thermal interface material), but not limited thereto. The thermal interface material may be or include thermal grease, thermal gel, thermal pad, phase change material (PCM), phase change metal alloy (PCMA), thermal conductive adhesive, but not limited thereto.

[0200] Please refer to Figure 15 , Figure 15 which is a schematic cross-sectional view of the device with a heat source and an airflow generating wafer in the fifth embodiment of the present invention, wherein Figure 15 the shown airflow generating package PG can be a variant embodiment belonging to Figure 5 the second design DS2 shown. As Figure 15 shown, the difference between this embodiment and Figure 14 the embodiment shown lies in the position of the heat source 110 of the device 500. In Figure 15 , the heat source 110, the heat conducting element 120 and the airflow generating package PG (i.e., the airflow generating element) can overlap in the Z direction, and the heat conducting element 120 can be arranged between the heat source 110 and the airflow generating package PG in the Z direction.

[0201] As Figure 15 shown, another difference between this embodiment and Figure 14 the embodiment shown lies in the position of the first housing opening 132 of the device 500. Therefore, the direction of the airflow passing through the air opening OPP1, the direction of the airflow passing through the air opening OPP2, and the direction of the airflow passing through the first housing opening 132 can be perpendicular to the direction of the airflow passing through the second housing opening 134, but not limited thereto.

[0202] Please refer to Figure 16 , Figure 16 which is a schematic cross-sectional view of the device with a heat source and an airflow generating wafer in the sixth embodiment of the present invention, wherein Figure 16 the shown airflow generating package PG can be a variant embodiment belonging to Figure 5 the second design DS2 shown. As Figure 16 shown, the difference between this embodiment and Figure 15 the embodiment shown lies in that the airflow generating package PG of the device 600 includes a heat dissipation structure TP connected to the covering structure CSV, wherein the heat dissipation structure TP is arranged within the covering structure CSV to enhance the heat dissipation effect caused by the airflow generating package PG. For example, in Figure 16 , the heat dissipation structure TP can have a plurality of heat dissipation units distributed on the covering structure CSV, but not limited thereto.

[0203] Please refer to Figure 17 , Figure 17 which is a schematic cross-sectional view of the device with a heat source and an airflow generating wafer in the seventh embodiment of the present invention, wherein Figure 17 the shown airflow generating package PG can be a variant embodiment belonging to Figure 5 the second design DS2 shown. As Figure 17 shown, the difference between this embodiment and Figure 15The difference between the illustrated embodiments lies in the design of the heat conducting element 120 of the device 700. In Figure 17 , the heat conducting element 120 can completely overlap the airflow generating package PG in the Z direction, and the heat source 110 can be connected to the covering structure CSV of the airflow generating package PG through the heat conducting element 120. For example, the heat conducting element 120 can include a heat sink, a radiator, a thermal interface material, an interposer, or a combination thereof, but is not limited thereto. Additionally, in Figure 17 , the heat source 110 can be disposed on the board 710 (such as, a circuit board) such that the heat source 110 can be disposed between the board 710 and the heat conducting element 120, but is not limited thereto.

[0204] A miniaturized device DV will be provided below. For example, the device DV below can be a semiconductor device, which is an electronic device, where the semiconductor device can be formed by a semiconductor process (the semiconductor process includes a packaging process), and the size of the semiconductor device can be similar to or the same as the size of the semiconductor packaging structure. Some embodiments of the device DV as a semiconductor device are illustrated in Figures 18 to 23 , but the device DV is not limited to the following embodiments.

[0205] Please refer to Figure 18 , Figure 18 The cross-sectional schematic diagram of the device with a heat source and an airflow generating wafer in the eighth embodiment of the present invention is shown, where the airflow generating element can be an airflow generating package PG having an airflow generating wafer AFC (the detailed content of the airflow generating package PG can be referred to above). In Figure 18 In the illustrated device 800, the airflow generating package PG having the airflow generating wafer AFC can be disposed on and overlap the heat source 110 in the Z direction. It should be noted that the device 800 can be regarded as a semiconductor device, where the airflow generating wafer AFC and the operating element (heat source 110) can be manufactured by a semiconductor process. The operating element (heat source 110) can be or include an application processor (suitable for mobile devices such as smartphones and tablets), a central processing unit, a graphics processing unit, a tensor processing unit, or a memory, where the operating element generates heat during operation. The operating element can be regarded as a heat source 110.

[0206] Optionally, the device 800 may include a heat conducting element 120 disposed between the airflow generating package PG and the heat source 110 to enhance the heat dissipation effect. For example, the heat conducting element 120 may include a heat sink, a radiator, a thermal interface material, an interposer, or a combination thereof, but is not limited thereto. In some embodiments, the heat source 110 may be connected to the airflow generating package PG through the heat conducting element 120 (e.g., the heat source 110, the heat conducting element 120, and the airflow generating package PG (or the airflow generating wafer AFC) may overlap in the direction Z). For example, the heat source 110 may be adhered to the airflow generating package PG through the heat conducting element 120, but is not limited thereto.

[0207] In Figure 18 it, the device 800 may have at least one first device opening 802 and at least one second device opening 804. In addition, an air channel 806 is formed between the operating element (heat source 110) and the airflow generating wafer AFC of the airflow generating package PG, and the airflow generated by the airflow generating wafer AFC of the airflow generating package PG can flow through the air channel 806, the first device opening 802, and the second device opening 804, wherein the airflow can flow into the device 800 through the first device opening 802 or the second device opening 804 (i.e., one of the first device opening 802 and the second device opening 804 can be the device airflow inlet), and the airflow can flow out of the device 800 through the first device opening 802 or the second device opening 804 (i.e., the other of the first device opening 802 and the second device opening 804 can be the device airflow outlet) to dissipate the heat generated by the heat source 110 (operating element). Since the flow direction of the airflow generated by the airflow generating wafer AFC of the airflow generating package PG is reversible, when the airflow reverses, the device airflow inlet and the device airflow outlet will be interchanged.

[0208] For example, the first device opening 802 may be the air opening OPP1 of the package housing PH of the airflow generating package PG, and the second device opening 804 may be the air opening OPP2 of the package housing PH of the airflow generating package PG, but is not limited thereto. For example, the first device opening 802 or the second device opening 804 may be located between the airflow generating package PG and the heat source 110 and does not belong to the airflow generating package PG, but is not limited thereto.

[0209] Belong to Figure 18 A example of the device 800' belonging to the design shown in Figure 19 is shown in Figure 19 wherein Figure 5 the airflow generating package PG shown belongs to the Figure 19 variant embodiment of the second design DS2 shown. As Figure 19 shown, the airflow generating wafer AFC may include a plurality of film structures FS. For the sake of clarity and simplicity of the drawings, the anchoring structure AR of the airflow generating wafer AFC is in Figure 19is omitted. Additionally, the base BSP may have a plurality of air openings OPP1 that overlap the membrane structure FS of the air flow generating wafer AFC, and the side wall CSVw of the covering structure CSV may have an air opening OPP2 such that the direction of the air flow passing through the air opening OPP1 may be perpendicular to the direction of the air flow passing through the air opening OPP2. In Figure 19 the first device opening 802 may be the air opening OPP1 of the air flow generating package PG, and the second device opening 804 may be the air opening OPP2 of the air flow generating package PG.

[0210] In Figure 19 the covering structure CSV of the air flow generating package PG may be between the heat source 110 and the base BSP of the air flow generating package PG, and the heat source 110 may be connected to the covering structure CSV of the air flow generating package PG through a heat conducting element 120 (e.g., the heat conducting element 120 may be in direct contact with the heat source 110 and the covering structure CSV).

[0211] Furthermore, the cavity surrounded by the covering structure CSV may form an air channel 806'. That is to say, the air channel 806' is formed between the operating element (heat source 110) and the air flow generating wafer AFC. Similarly, the air flow generated by the air flow generating wafer AFC may flow through the air channel 806' and the air openings OPP1, OPP2, and can dissipate the heat generated by the operating element (heat source 110).

[0212] Please refer to Figure 20 , Figure 20 which shows a cross-sectional schematic view of a device with a heat source and an air flow generating wafer in the ninth embodiment of the present invention, where the device 900 is an air flow generating package or a semiconductor device serving as a package, and the air flow generating element is the air flow generating wafer AFC. In Figure 20 the device 900 serving as an air flow generating package is similar to Figure 5 the second design DS2 of the air flow generating package PG shown (it should be noted that the device 900 may be similar to any of the above designs and / or examples of the air flow generating package PG), such that the base BSP has an air opening OPP1 that overlaps the membrane structure FS of the air flow generating wafer AFC, and the side wall CSVw of the covering structure CSV has an air opening OPP2.

[0213] The positions of the air flow generating wafer AFC and the heat source 110 may be designed according to requirements, where the air flow generating wafer AFC may be disposed adjacent to the heat source 110 (i.e., the air flow generating wafer AFC may be disposed above, below, or beside the heat source 110). For example, in Figure 20In this case, the airflow generating wafer AFC and the heat source 110 can be respectively disposed on two opposite sides of the substrate BSP. The airflow generating wafer AFC can be between the substrate BSP and the covering structure CSV, but is not limited thereto. For example, the airflow generating wafer AFC can overlap the heat source 110 in the Z direction, but is not limited thereto.

[0214] Optionally, the device 900 (i.e., the package) can include a fin-type heat conducting element 120' (a kind of heat conducting element 120), which is disposed at any suitable position to enhance the heat dissipation effect. For example, the fin-type heat conducting element 120' can include a heat sink, but is not limited thereto. In some embodiments, the fin-type heat conducting element 120' can be disposed on the heat source 110 (e.g., the fin-type heat conducting element 120' can be connected to or in contact with the heat source 110) to obtain the heat generated by the heat source 110. The fin-type heat conducting element 120' can pass through the substrate BSP so that the heat of the fin-type heat conducting element 120' can be dissipated through the airflow generated by the airflow generating wafer AFC (e.g., the airflow flows through the fin-type heat conducting element 120' and is used to dissipate the heat of the heat source 110).

[0215] It should be noted that the concept of "fin-type" is to increase the surface area to enhance the heat dissipation effect. The heat sink or heat conducting element with "fin-type" is only for illustrative purposes and is not limited thereto. The fin-type heat conducting element 120' includes various heat sinks or heat conducting components with non-planar surfaces (e.g., heat sinks or heat conducting elements with protrusions in regular or irregular forms).

[0216] Please refer to Figure 21 , Figure 21 FIG. shows a cross-sectional schematic view of a device with a heat source and an airflow generating wafer in the tenth embodiment of the present invention. The device 1000 is an airflow generating package or a semiconductor device serving as a package, and the airflow generating element is the airflow generating wafer AFC. In Figure 21 In the device 1000 (i.e., the package) shown, the device 1000 is similar to Figure 5 the fourth design DS4 of the airflow generating package PG shown, such that the side surface of the substrate BSP has a plurality of air openings OPP1, and the top CSVt of the covering structure CSV has an air opening OPP2.

[0217] Similar to Figure 20 the embodiment shown, the airflow generating wafer AFC and the heat source 110 can be respectively disposed on two opposite sides of the substrate BSP. The airflow generating wafer AFC can be disposed between the substrate BSP and the covering structure CSV. The fin-type heat conducting element 120' can be disposed on the heat source 110 and pass through the substrate BSP.

[0218] In Figure 21In this case, the air flow generating wafer AFC, the fin heat conducting element 120', and the heat source 110 can overlap in the Z direction, and the fin heat conducting element 120' can be disposed between the air flow generating wafer AFC and the heat source 110. For example (as Figure 21 shown), the fin heat conducting element 120' can be the wall of the hollow structure EP, but is not limited thereto.

[0219] Please refer to Figure 22 , Figure 22 shown is a schematic cross-sectional view of a device with a heat source and an air flow generating wafer according to the eleventh embodiment of the present invention, where the device 1100 is an air flow generating package or a semiconductor device serving as a package, and the air flow generating element is the air flow generating wafer AFC. In Figure 22 the shown device 1100 (i.e., the package), the device 1100 can include a plurality of air flow generating wafers AFC1, AFC2 disposed on the substrate BSP, where the air flow generating wafer AFC1 can be disposed beside the air flow generating wafer AFC2. In Figure 22 this case, the substrate BSP can have an air opening OPP1 overlapping the air flow generating wafer AFC1 and an air opening OPP2 overlapping the air flow generating wafer AFC2, such that the direction of the air flow passing through the air opening OPP1 can be parallel to the direction of the air flow passing through the air opening OPP2. It should be noted that the flow direction of the air flow generated by the air flow generating wafer AFC1 is opposite to the flow direction of the air flow generated by the air flow generating wafer AFC2.

[0220] Similar to Figure 20 the shown embodiment, the air flow generating wafer AFC and the heat source 110 can be respectively disposed on two opposite sides of the substrate BSP, the air flow generating wafer AFC can be disposed between the substrate BSP and the covering structure CSV, and the fin heat conducting element 120' can be disposed on the heat source 110 and pass through the substrate BSP. For example, the air flow generating wafer AFC may not overlap the heat source 110 in the Z direction, but is not limited thereto.

[0221] In Figure 22 this case, the heat source 110 and the fin heat conducting element 120' can be disposed between the two air flow generating wafers AFC1, AFC2 in the horizontal direction (e.g., the X direction), but is not limited thereto. For example, the air flow generating wafer AFC1 can be disposed on the first side of the fin heat conducting element 120' to form an inflowing (inward) air flow, and the air flow generating wafer AFC2 can be disposed on the second side of the fin heat conducting element 120' to form an outflowing (outward) air flow, but is not limited thereto.

[0222] Please refer to Figure 23 , Figure 23The following is a cross-sectional schematic view of a device with a heat source and an airflow generating wafer in the twelfth embodiment of the present invention, where the device 1200 is an airflow generating package or a semiconductor device serving as a package, and the airflow generating element is an airflow generating wafer AFC. In Figure 23 In the shown device 1200 (i.e., the package), the device 1200 may include a plurality of airflow generating wafers AFC and a plurality of heat sources 110, where the airflow generating wafers AFC and the heat sources 110 may be disposed between a substrate BSP and a covering structure CSV. For example, in Figure 23 , the heat sources 110 may overlap each other in the Z direction (e.g., one heat source 110 may be stacked on another heat source 110 to form a 3D integrated circuit), and the airflow generating wafers AFC may overlap each other in the Z direction (e.g., the airflow generating wafer AFC1 may be stacked on the airflow generating wafer AFC3, and the airflow generating wafer AFC2 may be stacked on the airflow generating wafer AFC4). In Figure 23 , the airflow generating wafers AFC may overlap the heat sources 110 in the Z direction, but not limited thereto.

[0223] In Figure 23 , the heat sources 110 and the fin-type heat conducting element 120' may be disposed in the horizontal direction (e.g., the X direction) between two adjacent airflow generating wafers AFC, but not limited thereto. For example, the stacked airflow generating wafers AFC1 and AFC3 may be disposed on the first side of the fin-type heat conducting element 120', and the stacked airflow generating wafers AFC2 and AFC4 may be disposed on the second side of the fin-type heat conducting element 120', but not limited thereto. In Figure 23 , the fin-type heat conducting element 120' may be disposed on the heat source 110, but not limited thereto. In some embodiments, since the conductive structure CV (e.g., TSV) connected to the heat source 110 may have a heat conducting effect, the presence of the conductive structure CV can improve the heat dissipation effect.

[0224] In some embodiments, the semiconductor device may be a semiconductor element SC including at least one airflow generating wafer AFC and at least one heat source 110. For example, Figure 4 the semiconductor element SC2 may also be referred to as a semiconductor device, Figure 4 and the wafer CP in

[0225] Figure 24 Figure 24In the schematic diagram of the device 1300 (semiconductor device) according to an embodiment of the present invention as shown, compared with the above embodiment, the device 1300 (semiconductor device) includes a plurality of thermally conductive balls CB (e.g., solder balls), and may selectively include a thermally conductive element 120. The conductive balls CB are disposed between the airflow generating wafer AFC and the operating element (heat source 110). It should be noted that the conductive balls CB have thermal conductivity in addition to electrical conductivity. The thermally conductive balls CB increase the contact surface area between the element and the air, and can be used to conduct the heat generated by the operating element (heat source 110). With the help of the airflow generated by the airflow generating wafer AFC, the heat generated by the operating element (heat source 110) can be effectively dissipated.

[0226] Figure 25 The schematic diagram of another embodiment of the semiconductor device 1400 of the present invention is shown. In the semiconductor device 1400, the airflow generating wafer AFC and / or the airflow generating package PG may be disposed beside the operating element (heat source 110). The heat generated by the operating element (heat source 110) (or the heat generated by the operating elements in the semiconductor device 1400) can be conducted through the thermally conductive element 120 and / or the thermally conductive balls CB, and dissipated through the airflow generated by the airflow generating wafer AFC and / or the airflow generating package PG. It should be noted that Figure 25 The shown airflow generating package PG is a top-firing package (an opening is formed at the top of the covering structure), but it is not limited thereto. A side-firing airflow generating package (an opening is formed at the side wall of the covering structure) is also within the scope of the present invention.

[0227] Figure 26 The schematic diagram of another embodiment of the semiconductor device 1500 of the present invention is shown. The semiconductor device 1500 includes a plurality of airflow generating wafers AFC and a plurality of operating elements (heat sources 110), wherein the plurality of airflow generating wafers AFC and the plurality of operating elements (heat sources 110) are stacked on top of each other, which means that the plurality of airflow generating wafers AFC and the plurality of operating elements (heat sources 110) overlap (completely or partially) in the normal direction of the substrate BSP (or substrate). In addition, semiconductor devices such as the semiconductor device 1500 having stacked airflow generating wafers AFC and operating elements (heat sources 110) can be applied in advanced packaging processes, such as 2.5D semiconductor packages, 3D semiconductor packages, or CoWoS packages.

[0228] In one embodiment, Figure 26 The shown airflow generating wafer AFC can also be encapsulated in an airflow generating package (e.g., the airflow generating package PG), wherein the airflow generating package can be stacked with the operating element (heat source 110), and this design is also within the scope of the present invention.

[0229] Figure 27The figure shows a schematic diagram of the device 1110 according to another embodiment of the present invention. The device 1110 includes an air flow generating wafer AFC and / or an air flow generating package PG, which is disposed adjacent to the heat sink 121. In Figure 27 In the illustrated embodiment, the air flow generating wafer AFC and / or the air flow generating package PG is disposed beside the heat sink 121 and generates an air flow to dissipate the heat carried by the heat sink 121. In one embodiment, the heat sink 121 may be a finned heat sink and may be a kind of finned heat conducting element. Different from the device 1100, the finned heat conducting element is disposed outside the air flow generating package PG, and this design is also within the scope of the present invention.

[0230] Figure 28 The figure shows schematic diagrams of the design DSN1 and DSN2 of the covering structure 1600 according to some embodiments of the present invention. In one embodiment, the covering structure 1600 may be a metal cover of the present invention for the air flow generating package. As Figure 28 shown, the covering structure 1600 includes a plurality of protrusions TPP disposed thereon. The protrusions TPP may be located on the outer side (e.g., design DSN1) or the inner side (e.g., design DSN2) of the covering structure 1600. The function of the protrusions TPP of the covering structure 1600 is similar to the aforementioned heat dissipation structure TP (for increasing the surface area and enhancing the heat dissipation effect). The covering structure 1600 can be used to implement the (various) covering structures CSV for the air flow generating package in the present invention.

[0231] In one embodiment, the protrusions TPP may be disposed on the outer side or the inner side of the covering structure, and this design is also within the scope of the present invention.

[0232] In summary, through the design of the heat conducting element of the present invention, the heat dissipation effect of the device is improved.

[0233] The above are only the preferred embodiments of the present invention. All equivalent changes and modifications made according to the claims of the present invention shall fall within the scope of the present invention.

Claims

1. An electronic device, comprising: An operating element, wherein the operating element generates heat during operation; A heat conducting element for conducting the heat generated by the operating element, wherein the operating element is disposed on the heat conducting element; And An air flow generating package disposed beside an edge of the electronic device; Wherein the air flow generating package includes a film structure, the film structure includes a pair of flaps, and the pair of flaps includes a first flap and a second flap; Wherein the pair of flaps operates at an ultrasonic frequency to generate an air flow; Wherein the heat conducting element extends towards the air flow generating package such that the air flow generated by the air flow generating package flows through the heat conducting element to dissipate the heat generated by the operating element through the heat conducting element.

2. The electronic device according to claim 1, wherein the operating element and the air flow generating package are disposed on the same side of the heat conducting element.

3. The electronic device according to claim 1, wherein the operating element, the heat conducting element and the air flow generating package overlap in a driving direction of the film structure.

4. The electronic device according to claim 1, wherein the air flow generating package includes a base and a covering structure, the film structure is disposed between the base and the covering structure, and the covering structure is disposed between the heat conducting element and the film structure.

5. The electronic device according to claim 4, wherein the heat conducting element adheres to the covering structure of the air flow generating package.

6. The electronic device according to claim 1, wherein the air flow generating package includes a covering structure and a heat dissipating structure, and the heat dissipating structure is distributed on the covering structure.

7. The electronic device according to claim 1, further comprising a housing; Wherein the operating element, the heat conducting element and the air flow generating package are disposed within the housing; Wherein the housing includes a first housing opening and a second housing opening, and the air flow generated by the air flow generating package passes through the first housing opening and the second housing opening.

8. The electronic device according to claim 7, wherein the air flow generating package generates the air flow passing through the first housing opening and the second housing opening.

9. The electronic device according to claim 1, wherein the heat conducting element includes a heat sink or a radiator.

10. The electronic device according to claim 1, wherein the heat conducting element includes a thermal interface material.

11. The electronic device according to claim 1, wherein the heat conducting element includes an interlayer.

12. The electronic device according to claim 1, wherein the heat conducting element includes a heat pipe or a vapor chamber.

13. The electronic device according to claim 1, wherein a flow direction of the air flow generated by the air flow generating package is reversible.

14. The electronic device according to claim 1, wherein the air flow generating package and the operating element are separated from each other by a spacer.

15. The electronic device according to claim 1, wherein the airflow generating package includes a semiconductor wafer, the semiconductor wafer is manufactured by a semiconductor process, and the semiconductor wafer is a microelectromechanical system wafer.

16. The electronic device according to claim 1, wherein the operating element includes an application processor, a central processing unit, a graphics processing unit, a tensor processing unit, or a memory.

17. An airflow generating package, comprising: a substrate; and a membrane structure disposed on the substrate and operating at an ultrasonic frequency to cause the airflow generating package to generate an airflow; wherein an air channel is formed in the substrate such that the airflow flows through the air channel; wherein a flow direction of the airflow in the air channel is perpendicular to a normal direction of the membrane structure.

18. The airflow generating package according to claim 17, wherein the airflow generating package is disposed on a heat source or a heat conducting element, and the airflow generated by the membrane structure is used to dissipate the heat of the heat source or the heat conducting element.

19. The airflow generating package according to claim 17, wherein the membrane structure includes a pair of flaps, and the pair of flaps includes a first flap and a second flap.

20. An airflow generating package, comprising: a membrane structure operating at an ultrasonic frequency to cause the airflow generating package to generate an airflow; and a covering structure, wherein a plurality of protrusions are disposed on the covering structure to enhance heat dissipation when the airflow generated by the membrane structure flows through.

21. The airflow generating package according to claim 20, wherein an air opening is formed on a sidewall of the covering structure.

22. The airflow generating package according to claim 20, wherein the membrane structure includes a pair of flaps, and the pair of flaps includes a first flap and a second flap.

23. An airflow generating package, comprising: a housing; a membrane structure disposed in the housing and operating at an ultrasonic frequency to cause the airflow generating package to generate an airflow; and a cavity formed on one side of the membrane structure; wherein an air opening is formed on a sidewall of the housing.

24. The airflow generating package according to claim 23, wherein the housing includes a substrate, and the substrate includes the cavity; wherein the air opening is formed on a sidewall of the substrate.

25. The airflow generating package according to claim 24, wherein a Helmholtz resonance is formed in the cavity.

26. The airflow generating package according to claim 23, further comprising: a first airflow generating wafer and a second airflow generating wafer; wherein the first airflow generating wafer and the second airflow generating wafer are stacked on each other.

27. The airflow generating package according to claim 26, wherein one of the first airflow generating wafer and the second airflow generating wafer is disposed in a flip chip manner.

28. The airflow generating package according to claim 23, wherein a first air opening is formed on a first sidewall of the housing.

29. The airflow generating package according to claim 28, wherein a second air opening is formed on a second sidewall of the housing.

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