LED transfer method and LED transfer equipment

Abstract

The invention discloses an LED transfer method and LED transfer equipment, and mainly relates to the technical field of LED transfer, the LED transfer method comprises the following steps: a growth substrate comprises a growth substrate, an LED and a first magnetic structure; the transient substrate comprises a transient substrate, a second magnetic structure and a first adhesive layer; the polarities of the sides, close to each other, of the first magnetic structure on the growth substrate and the second magnetic structure on the transient substrate are the same; a first preset pressure which is close to each other is applied to the growth substrate or the transient substrate, so that the electrode column of the LED is inserted into the first adhesive layer of the transient substrate until the LED does not move under the repulsive force action of the first magnetic structure and the second magnetic structure; the first preset pressure enables the electrode column of the LED not to abut against the transient substrate and the second magnetic structure; the growth substrate and the LED are separated to transfer the LED onto the transient substrate. Through the above design, the electrode column of the LED can be prevented from being damaged during transfer, and the transfer success rate of the LED is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and particularly to a method for transferring LEDs and an LED transfer device. Background Art

[0002] Compared with traditional liquid crystal display panels, micro light-emitting diode (Micro LED) display panels have the advantages of higher resolution, better contrast, faster response time, and lower energy consumption, and are thus regarded as the next-generation display technology. After Micro LEDs are fabricated, tens of thousands to hundreds of thousands of Micro LEDs need to be transferred onto a driving circuit board to form an LED array, and this process is called "mass transfer".

[0003] In the current Micro LED mass transfer technology, there is a situation where the electrode posts of the LEDs are damaged during transfer, resulting in a reduction in the transfer success rate of the LEDs. Summary of the Invention

[0004] The purpose of the present application is to provide a method for transferring LEDs and an LED transfer device, which can avoid damage to the electrode posts of the LEDs during transfer and improve the transfer success rate of the LEDs.

[0005] The present application discloses a method for transferring LEDs, which is used to transfer the LEDs on a growth substrate to a transient substrate. The method for transferring the LEDs includes the steps of: Providing a growth substrate and a transient substrate, where the growth substrate includes a growth substrate, an LED, and a first magnetic structure, and both the first magnetic structure and the LED are disposed on the growth substrate; the transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer, and both the second magnetic structure and the first adhesive layer are disposed on the transient substrate; Placing the side of the growth substrate with the LEDs opposite to the side of the transient substrate with the first adhesive layer, and the electrode posts of the LEDs facing the first adhesive layer, and the sides of the first magnetic structure on the growth substrate and the second magnetic structure on the transient substrate that are close to each other having the same polarity; Applying a first preset pressure to the growth substrate or the transient substrate to cause them to approach each other, and the distance between the growth substrate and the transient substrate gradually decreases, so that the electrode posts of the LEDs are inserted into the first adhesive layer of the transient substrate until the LEDs stop moving under the repulsive force of the first magnetic structure and the second magnetic structure, and the first preset pressure ensures that the electrode posts of the LEDs do not contact the transient substrate and the second magnetic structure; Separating the growth substrate from the LEDs to transfer the LEDs to the transient substrate.

[0006] Optionally, the first magnetic structure is disposed on a side of the electrode post of the LED away from the substrate; the growth substrate further includes a sacrificial layer disposed between the electrode post of the LED and the first magnetic structure; After the step of separating the growth substrate and the LED to transfer the LED to the transient substrate, the method further includes: Providing a transfer substrate, the transfer substrate including a transfer substrate and a second adhesive layer, the second adhesive layer being disposed on the transfer substrate; Placing a side of the transfer substrate provided with the second adhesive layer opposite to a side of the transient substrate provided with the first adhesive layer, and the chip of the LED facing the second adhesive layer; Applying a second preset pressure to the transfer substrate or the transient substrate to approach each other, and the distance between the transfer substrate and the transient substrate gradually decreases, so that the chip of the LED adheres to the second adhesive layer of the transfer substrate; Debonding the first adhesive layer; Applying a third preset pressure to the transfer substrate or the transient substrate to move away from each other, so as to transfer the LED to the second adhesive layer on the transfer substrate; Removing the sacrificial layer, so that the first magnetic structure is separated from the electrode post of the LED.

[0007] Optionally, in the step of providing a growth substrate and a transient substrate, the growth substrate includes a growth substrate, an LED, and a first magnetic structure, the first magnetic structure and the LED are both disposed on the growth substrate; the transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer, the second magnetic structure and the first adhesive layer are both disposed on the transient substrate: The first magnetic structure is disposed on the growth substrate, and the first magnetic structure is located between two adjacent LEDs; After the step of separating the growth substrate and the LED to transfer the LED to the transient substrate, the method further includes: Providing a transfer substrate, the transfer substrate including a transfer substrate and a second adhesive layer, the second adhesive layer being disposed on the transfer substrate; Placing a side of the transfer substrate provided with the second adhesive layer opposite to a side of the transient substrate provided with the first adhesive layer, and the chip of the LED facing the second adhesive layer; Applying a second preset pressure to the transfer substrate or the transient substrate to approach each other, and the distance between the transfer substrate and the transient substrate gradually decreases, so that the chip of the LED adheres to the second adhesive layer of the transfer substrate; Debonding the first adhesive layer; Apply a third preset pressure that causes the transfer substrate or the transient substrate to move away from each other, so as to transfer the LED onto the second adhesive layer on the transfer substrate.

[0008] This application also discloses a transfer device for an LED. The LED includes a chip and an electrode post, and the electrode post is connected to the chip. The transfer device for the LED includes: A first machine platform, which includes an LED generation device, a first magnetic structure generation device, and a growth substrate. The growth substrate includes a growth substrate, an LED, and a first magnetic structure. The first magnetic structure and the LED are disposed on the growth substrate. The LED generation device is used to form the LED on the growth substrate. The first magnetic structure is used to form the first magnetic structure on the growth substrate. A second machine platform, which includes a transient substrate, a growth substrate peeling device, and a pressing device. The transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer. The second magnetic structure and the first adhesive layer are disposed on the transient substrate. The pressing device is used to apply a first preset pressure that causes the growth substrate or the transient substrate to move closer to each other. The distance between the growth substrate and the transient substrate gradually decreases, so that the electrode post of the LED is inserted into the first adhesive layer of the transient substrate until the LED stops moving under the repulsive force of the first magnetic structure and the second magnetic structure. The first preset pressure ensures that the electrode post of the LED does not contact the transient substrate and the second magnetic structure. The growth substrate peeling device is used to separate the growth substrate and the LED.

[0009] Optionally, the second machine platform further includes a glue dissolving device and a transfer substrate. The transfer substrate includes a transfer substrate and a second adhesive layer. The second adhesive layer is disposed on the transfer substrate. The second adhesive layer on the transfer substrate is used to bond the chip of the LED. The glue dissolving device is used to dissolve the first adhesive layer.

[0010] Optionally, the first magnetic structure is disposed on the side of the electrode post of the LED away from the growth substrate.

[0011] Optionally, the growth substrate further includes a sacrificial layer, and the sacrificial layer is disposed between the electrode post of the LED and the first magnetic structure.

[0012] Optionally, the first magnetic structure is disposed on the growth substrate, and the first magnetic structure is located between two adjacent LEDs.

[0013] Optionally, the second magnetic structure is disposed on a side of the transient substrate close to the first adhesive layer. The transient substrate further includes a spacer block disposed between the second magnetic structure and the transient substrate, and a sum of a thickness of the spacer block and a thickness of the second magnetic structure is less than a thickness of the first adhesive layer.

[0014] Optionally, the growth substrate further includes a third magnetic structure disposed on a side of an electrode post of the LED away from the growth substrate. The transient substrate further includes a fourth magnetic structure disposed on the transient substrate, and the fourth magnetic structure and the second magnetic structure are spaced apart. The third magnetic structure and the fourth magnetic structure are configured to apply a first preset pressure to move the growth substrate and the transient substrate closer to each other, and a distance between the growth substrate and the transient substrate gradually decreases, so that an attractive force is generated when the electrode post of the LED is inserted into the first adhesive layer of the transient substrate.

[0015] Compared with the existing LED transfer method, the LED transfer method of the present application applies a first preset pressure to move the growth substrate and the transient substrate closer to each other. The first preset pressure cooperates with the repulsive force of the first magnetic structure and the second magnetic structure to prevent the LED from moving, and the first preset pressure prevents the electrode post of the LED from contacting the transient substrate and the second magnetic structure, so as to avoid the electrode post of the LED from contacting the transient substrate and the second magnetic structure during transfer, thereby preventing the electrode post of the LED from being damaged during transfer and improving the transfer success rate of the LED. Description of the Drawings

[0016] The accompanying drawings included herein are used to provide a further understanding of the embodiments of the present application, and constitute a part of the specification, and are used to illustrate the embodiments of the present application and to explain the principles of the present application together with the text description. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts. In the drawings: Figure 1 is a schematic flowchart of a first LED transfer method according to an embodiment of the present application; Figure 2a is a schematic diagram of a first-stage process of a first LED transfer method according to an embodiment of the present application; Figure 2b is a schematic diagram of a second-stage process of a first LED transfer method according to an embodiment of the present application; Figure 2cIt is a schematic diagram of the third-stage process of the first LED transfer method according to an embodiment of the present application; Figure 3 It is a schematic flowchart of the second LED transfer method according to an embodiment of the present application; Figure 4 It is a schematic diagram of the first LED transfer device according to an embodiment of the present application; Figure 5 It is a schematic diagram of the growth substrate in the first LED transfer device according to an embodiment of the present application; Figure 6 It is a schematic diagram of the transient substrate in the first LED transfer device according to an embodiment of the present application; Figure 7 It is a schematic diagram in which the electrode posts of the LEDs in the growth substrate of the first LED transfer device according to an embodiment of the present application are inserted on the first adhesive layer of the transient substrate; Figure 8 It is a schematic diagram of the transfer substrate in the first LED transfer device according to an embodiment of the present application; Figure 9 It is a schematic diagram of the first magnetic structure in the first LED transfer device according to an embodiment of the present application; Figure 10 It is a schematic diagram of the second LED transfer device according to an embodiment of the present application; Figure 11 It is a schematic diagram of the growth substrate of the second LED transfer device according to an embodiment of the present application; Figure 12 It is a schematic diagram of the transient substrate of the second LED transfer device according to an embodiment of the present application; Figure 13 It is a schematic diagram in which the electrode posts of the LEDs in the growth substrate of the second LED transfer device according to an embodiment of the present application are inserted on the first adhesive layer of the transient substrate; Figure 14 It is a schematic diagram of the growth substrate of the third LED transfer device according to an embodiment of the present application; Figure 15 It is a schematic diagram of the transient substrate of the third LED transfer device according to an embodiment of the present application; Figure 16 It is a schematic diagram in which the electrode posts of the LEDs in the growth substrate of the third LED transfer device according to an embodiment of the present application are inserted on the first adhesive layer of the transient substrate.

[0017] Among them, 10 is a transfer device for LEDs; 200 is a first machine platform; 210 is an LED generation device; 220 is a first magnetic structure generation device; 300 is a growth substrate; 310 is a growth substrate; 320 is an LED; 321 is a chip; 322 is an electrode post; 340 is a sacrificial layer; 341 is a groove; 350 is a first magnetic structure; 360 is a third magnetic structure; 400 is a second machine platform; 410 is a growth substrate peeling device; 420 is a pressing device; 500 is a transient substrate; 510 is a transient substrate; 520 is a second magnetic structure; 530 is a fourth magnetic structure; 540 is a first adhesive layer; 550 is a glue removing device; 560 is a spacer block; 570 is a first magnetic structure removing device; 600 is a transfer substrate; 610 is a transfer substrate; 620 is a second adhesive layer; 700 is a driving backplane. Detailed implementation manners

[0018] It should be understood that the terms, the specific structures and functional details disclosed herein are only for the purpose of describing specific embodiments, which are representative, but the present application can be specifically implemented in many alternative forms and should not be construed as being limited only to the embodiments set forth herein.

[0019] In the description of the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating relative importance or implicitly indicating the quantity of the indicated technical features. Thus, unless otherwise specified, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features; the meaning of "plural" is two or more. The term "comprising" and any deformation thereof means non-exclusive inclusion, and there may be or may be added one or more other features, integers, steps, operations, units, components and / or combinations thereof.

[0020] In addition, the terms indicating the orientation or positional relationship such as "center", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are described based on the orientation or relative positional relationship shown in the drawings, and are only for the convenience of describing the present application in a simplified manner, rather than indicating that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation to the present application.

[0021] In addition, unless otherwise clearly specified and limited, the terms "mounted", "connected" and "connected" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, or the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.

[0022] The present application will be described in detail below with reference to the accompanying drawings and optional embodiments.

[0023] Figure 1 is a schematic flow chart of the first LED transfer method according to an embodiment of the present application, Figure 2a is a schematic diagram of the first-stage manufacturing process of the first LED transfer method according to an embodiment of the present application, Figure 2b is a schematic diagram of the second-stage manufacturing process of the first LED transfer method according to an embodiment of the present application, Figure 2c is a schematic diagram of the third-stage manufacturing process of the first LED transfer method according to an embodiment of the present application. As Figures 1 - 2c shown, the present application discloses an LED transfer method, and the LED transfer method is used to transfer the LED 320 on the growth substrate 300 to the transient substrate 500. The LED transfer method includes the steps of: S1: Provide a growth substrate and a transient substrate. The growth substrate includes a growth substrate, an LED, and a first magnetic structure, and both the first magnetic structure and the LED are disposed on the growth substrate; the transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer, and both the second magnetic structure and the first adhesive layer are disposed on the transient substrate 510.

[0024] Among them, the material of the first adhesive layer 540 may be an acrylic resin (PMMA) type or a polyimide resin (PI) type; the first magnetic structure 350 may be made of a permanent magnetic material or an electromagnetic material; the second magnetic structure 520 may be made of a permanent magnetic material or an electromagnetic material. Moreover, the thickness of the first adhesive layer 540 is greater than the height of the electrode post 322 of the LED 320.

[0025] S2: Oppose the side of the growth substrate provided with the LED to the side of the transient substrate provided with the first adhesive layer, and the electrode post of the LED faces the first adhesive layer. The sides of the first magnetic structure on the growth substrate and the second magnetic structure on the transient substrate that are close to each other have the same polarity.

[0026] Exemplarily, the growth substrate 300 can be moved above the transient substrate 500, and the side of the growth substrate 300 provided with the LED 320 is opposed to the side of the transient substrate 500 provided with the first adhesive layer 540, so that the electrode post 322 of the LED 320 can face the first adhesive layer 540, and the sides of the first magnetic structure 350 on the growth substrate 300 and the second magnetic structure 520 on the transient substrate 500 that are close to each other have the same polarity, generating a repulsive force.

[0027] S3: Apply a first preset pressure that makes the growth substrate and the transient substrate approach each other. The distance between the growth substrate and the transient substrate gradually decreases, causing the electrode posts of the LED to insert into the first adhesive layer of the transient substrate until the LED stops moving under the repulsive force of the first magnetic structure and the second magnetic structure. The first preset pressure ensures that the electrode posts of the LED do not contact the transient substrate and the second magnetic structure.

[0028] Wherein, as the distance between the growth substrate 300 and the transient substrate 500 gradually decreases, the repulsive force between the first magnetic structure 350 and the second magnetic structure 520 gradually increases. By calculating the repulsive force between the first magnetic structure 350 and the second magnetic structure 520 when the electrode posts 322 of the LED 320 are inserted into the first adhesive layer 540 and the electrode posts 322 of the LED 320 do not contact the transient substrate 510 and the second magnetic structure 520, it is defined as the maximum repulsive force. The first preset pressure is less than the maximum repulsive force.

[0029] Exemplarily, a first preset pressure can be applied to the growth substrate 300, and the first preset pressure is less than the maximum repulsive force between the first magnetic structure 350 and the second magnetic structure 520, so that the electrode posts 322 of the LED 320 can stop moving downward before contacting the transient substrate 510 and the second magnetic structure 520.

[0030] S4: Separate the growth substrate and the LED to transfer the LED to the transient substrate.

[0031] LLO (Laser Lift-off, a technology that uses laser energy to decompose materials) can be used to separate the growth substrate 310 and the LED 320 to complete the transfer of the LED 320 to the transient substrate 500.

[0032] Compared with the existing LED transfer method, the LED transfer method of the present application applies a first preset pressure that makes the growth substrate 300 and the transient substrate 500 approach each other. The first preset pressure, combined with the repulsive force of the first magnetic structure 350 and the second magnetic structure 520, makes the LED 320 stop moving, and the first preset pressure ensures that the electrode posts 322 of the LED 320 do not contact the transient substrate 510 and the second magnetic structure 520, thus avoiding the contact between the electrode posts 322 of the LED 320 and the transient substrate 510 and the second magnetic structure 520, and avoiding damage to the electrode posts 322 of the LED 320 during transfer, thereby improving the transfer success rate of the LED 320.

[0033] SeeFigures 2a - 2c In the first LED transfer method, the first magnetic structure 350 is disposed on the side of the electrode post 322 of the LED 320 away from the substrate; the growth substrate 300 further includes a sacrificial layer 340, and the sacrificial layer 340 is disposed between the electrode post 322 of the LED 320 and the first magnetic structure 350; simply speaking, the sacrificial layer 340 is first disposed on the electrode post 322 of the LED 320, and then the first magnetic structure 350 is disposed on the sacrificial layer 340.

[0034] After the step S4: separating the growth substrate and the LED to transfer the LED to the transient substrate, the following steps are further included: S51: providing a transfer substrate, the transfer substrate including a transfer substrate and a second adhesive layer, and the second adhesive layer is disposed on the transfer substrate.

[0035] Wherein, the material of the second adhesive layer 620 includes PDMS (polydimethylsiloxane).

[0036] S52: making the side of the transfer substrate provided with the second adhesive layer face the side of the transient substrate provided with the first adhesive layer, and the chip of the LED faces the second adhesive layer.

[0037] Exemplarily, the transfer substrate 600 can be moved above the transient substrate 500. At this time, the side of the transfer substrate 600 provided with the second adhesive layer 620 faces the side of the transient substrate 500 provided with the first adhesive layer 540, so that the second adhesive layer 620 faces the chip 321 of the LED 320.

[0038] S53: applying a second preset pressure for the transfer substrate and the transient substrate to approach each other, and the distance between the transfer substrate and the transient substrate gradually decreases, so that the chip of the LED adheres to the second adhesive layer of the transfer substrate; Exemplarily, a second preset pressure for the transfer substrate 600 to approach the transient substrate 500 can be applied, and the second preset pressure can be equal to the first preset pressure, so that the chip 321 of the LED 320 adheres to the second adhesive layer 620 of the transfer substrate 600.

[0039] S54: demolding the first adhesive layer; Exemplarily, methods such as thermal decomposition, photodebonding, and laser decomposition can be used to demold the first adhesive layer 540.

[0040] S55: applying a third preset pressure for the transfer substrate and the transient substrate to move away from each other to transfer the LED to the second adhesive layer on the transfer substrate; Simply put, it is to move the transfer substrate 600 or the transient substrate 500. Exemplarily, the transfer substrate 600 can be moved.

[0041] S56: Remove the sacrificial layer so that the first magnetic structure is separated from the electrode post of the LED.

[0042] Since the first magnetic structure 350 is provided on the electrode post 322 of the LED 320, the first magnetic structure 350 needs to be removed before the LED 320 is bonded to the driving circuit board. And in the first LED transfer method, a sacrificial layer 340 is provided on the electrode post 322 of the LED 320. In this way, when removing the first magnetic structure 350, the first magnetic structure 350 can be separated from the electrode post 322 of the LED 320 by removing the sacrificial layer 340, and the electrode post 322 of the LED 320 will not be damaged.

[0043] Exemplarily, the material of the sacrificial layer 340 can be a photoresist, and then the sacrificial layer 340 is removed by a photoresist stripper to remove the first magnetic structure 350 on the electrode post 322 of the LED 320, which is more convenient and fast.

[0044] S6: Transfer the LEDs on the transfer substrate to the driving backplane.

[0045] Exemplarily, the removed transfer substrate 600 is moved above the driving backplane 700, and then the second adhesive layer 620 is debonded, and finally the LED 320 is bonded to the driving backplane 700, thus completing the transfer of the LED 320.

[0046] In the first LED transfer method, since the first magnetic structure 350 is provided on the electrode post 322 of the LED 320, it can be made of a permanent magnetic material, and the second magnetic structure 520 is provided on the growth substrate 310, so it is made of an electromagnetic material. And S54: Debonding the first adhesive layer 540 further includes: S541: Increase the current output to the second magnetic structure; By increasing the current output to the second magnetic structure, the magnetic force of the second magnetic structure is increased, so that the repulsive force between the first magnetic structure and the second magnetic structure is increased.

[0047] S542: Debond the first adhesive layer; By increasing the repulsive force between the first magnetic structure 350 and the second magnetic structure 520 and then debonding the first adhesive layer 540, the interaction force between the second adhesive layer 620 and the chip 321 of the LED 320 can be increased, so that the chip 321 of the LED 320 can be more firmly adhered to the second adhesive layer 620 of the transfer substrate 610. In this way, it is not necessary to apply a large second preset pressure on the transfer substrate 610, and the LED 320 can be firmly adhered to the transfer substrate 610 while avoiding the situation that the LED 320 moves downward and the electrode post 322 of the LED 320 is damaged, thus better completing the transfer step.

[0048] Figure 3 It is a schematic flowchart of the second LED transfer method according to an embodiment of the present application. As Figure 3 shown, different from the first LED transfer method, in the second LED transfer method, the first magnetic structure 350 in the growth substrate 300 is disposed on the growth substrate 310. Specifically: In the step S1: providing a growth substrate and a transient substrate, the growth substrate includes a growth substrate, an LED, and a first magnetic structure, and both the first magnetic structure and the LED are disposed on the growth substrate; the transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer, and both the second magnetic structure and the first adhesive layer are disposed on the transient substrate: The first magnetic structure 350 is disposed on the growth substrate 310, and the first magnetic structure 350 is located between two adjacent LEDs 320.

[0049] Then, after the step S4: separating the growth substrate and the LED to transfer the LED to the transient substrate, the following steps are further included: S51: providing a transfer substrate, the transfer substrate includes a transfer substrate and a second adhesive layer, and the second adhesive layer is disposed on the transfer substrate.

[0050] S52: making the side of the transfer substrate provided with the second adhesive layer face the side of the transient substrate provided with the first adhesive layer, and the chip of the LED faces the second adhesive layer.

[0051] S53: applying a second preset pressure for the transfer substrate and the transient substrate to approach each other, and the distance between the transfer substrate and the transient substrate gradually decreases, so that the chip of the LED is bonded to the second adhesive layer of the transfer substrate.

[0052] S54: debonding the first adhesive layer.

[0053] S55: Apply a third preset pressure to the transfer substrate or the transient substrate to move the LEDs away from each other and transfer the LEDs onto the second adhesive layer on the transfer substrate.

[0054] Since the sacrificial layer 340 and the first magnetic structure 350 are not provided on the electrode posts 322 of the LED 320 in the second LED transfer method, the steps of removing the sacrificial layer 340 and the first magnetic structure 350 are not required in the second LED transfer method. Compared with the first LED transfer method, in the second LED transfer method, by providing the first magnetic structure 350 on the growth substrate 310, there is no need to remove the first magnetic structure 350, reducing the transfer steps and improving the transfer efficiency.

[0055] Figure 4 FIG. 7 is a schematic diagram of a first LED transfer device according to an embodiment of the present application. Figure 5 FIG. 9 is a schematic diagram of a growth substrate in the first LED transfer device according to an embodiment of the present application. Figure 6 FIG. 11 is a schematic diagram of a transient substrate in the first LED transfer device according to an embodiment of the present application. Figure 7 FIG. 13 is a schematic diagram of the electrode posts of the LEDs in the growth substrate of the first LED transfer device according to an embodiment of the present application inserted on the first adhesive layer of the transient substrate. Figures 4 - 7 As shown in FIGS. 15-22, the present application discloses an LED transfer device 10. The LED 320 includes a chip 321 and electrode posts 322, and the electrode posts 322 are connected to the chip 321. The LED transfer device 10 includes: A first machine platform 200, which includes an LED generating device 210, a first magnetic structure generating device 220, and a growth substrate 300. The growth substrate 300 includes a growth substrate 310, LEDs 320, and a first magnetic structure 350. The first magnetic structure 350 and the LEDs 320 are provided on the growth substrate 310. The LED generating device 210 is used to form the LEDs 320 on the growth substrate 310. The first magnetic structure 350 is used to form the first magnetic structure 350 on the growth substrate 310.

[0056] A second machine platform 400, which includes a transient substrate 500, a growth substrate peeling device 410, and a pressing device 420. The transient substrate 500 includes a transient substrate 510, a second magnetic structure 520, and a first adhesive layer 540. The second magnetic structure 520 and the first adhesive layer 540 are provided on the transient substrate 510.

[0057] The pressing device 420 is used to apply a first preset pressure that makes the growth substrate 300 and the transient substrate 500 approach each other. The distance between the growth substrate 300 and the transient substrate 500 gradually decreases, so that the electrode posts 322 of the LED 320 are inserted into the first adhesive layer 540 of the transient substrate 500 until the LED 320 stops moving under the repulsive force of the first magnetic structure 350 and the second magnetic structure 520. The first preset pressure ensures that the electrode posts 322 of the LED 320 do not contact the transient substrate 510 and the second magnetic structure 520. The growth substrate peeling device 410 is used to separate the growth substrate 310 and the LED 320.

[0058] Compared with the existing LED transfer device 10, the LED transfer device 10 of the present application is provided with an LED generation device 210, a first magnetic structure generation device 220 and a growth substrate 300 on the first machine platform 200. The LED generation device 210 can form the LED 320 on the growth substrate 310, and the first magnetic structure 350 can form the first magnetic structure 350 on the growth substrate 310.

[0059] And a growth substrate peeling device 410 and a pressing device 420 are provided on the second machine platform 400. The pressing device 420 can apply a first preset pressure that makes the growth substrate 300 and the transient substrate 500 approach each other. The distance between the growth substrate 300 and the transient substrate 500 gradually decreases, so that the electrode posts 322 of the LED 320 are inserted into the first adhesive layer 540 of the transient substrate 500 until the LED 320 stops moving under the repulsive force of the first magnetic structure 350 and the second magnetic structure 520. The first preset pressure ensures that the electrode posts 322 of the LED 320 do not contact the transient substrate 510 and the second magnetic structure 520. The growth substrate peeling device 410 can separate the growth substrate 310 and the LED 320.

[0060] When transferring the LED 320 on the growth substrate 300 to the transient substrate 500, the LED 320 stops moving under the repulsive force of the first magnetic structure 350 and the second magnetic structure 520, and the first preset pressure ensures that the electrode posts 322 of the LED 320 do not contact the transient substrate 510 and the second magnetic structure 520, thus avoiding the contact between the electrode posts 322 of the LED 320 and the transient substrate 510 and the second magnetic structure 520, and further avoiding the damage of the electrode posts 322 of the LED 320 during transfer, and improving the transfer success rate of the LED 320.

[0061] In the transfer device 10 of the first type of LED, the first magnetic structure 350 is disposed on a side of the electrode post 322 of the LED 320 away from the growth substrate 310. The distance between the first magnetic structure 350 and the second magnetic structure 520 can be reduced, and the repulsive force generated between the first magnetic structure 350 and the second magnetic structure 520 can be increased, thereby preventing the electrode post 322 of the LED 320 from coming into contact with the second magnetic structure 520 and the transient substrate 510, and preventing damage to the electrode post 322 of the LED 320.

[0062] Moreover, the growth substrate 300 further includes a sacrificial layer 340, and the sacrificial layer 340 is disposed between the electrode post 322 of the LED 320 and the first magnetic structure 350. By providing the sacrificial layer 340, the situation of damaging the electrode post 322 of the LED 320 will not occur when the first magnetic structure 350 is removed. The second machine 400 further includes a first magnetic structure removing device 570, and the first magnetic structure removing device 570 is used to remove the first magnetic structure 350 on the electrode post 322 of the LED 320.

[0063] Figure 8 It is a schematic diagram of a transfer substrate in the transfer device of the first type of LED according to an embodiment of the present application. As shown in Figure 8 the figure, the second machine 400 further includes a glue removing device 550 and a transfer substrate 600. The transfer substrate 600 includes a transfer substrate 610 and a second adhesive layer 620, and the second adhesive layer 620 is disposed on the transfer substrate 610; the second adhesive layer 620 on the transfer substrate 600 is used to bond the chip 321 of the LED 320; the glue removing device 550 is used to demagnetize the first adhesive layer 540. By providing the glue removing device 550 and the transfer substrate 600, the LED 320 can be transferred from the transient substrate 500 to the transfer substrate 600.

[0064] Figure 9 It is a schematic diagram of the first magnetic structure in the transfer device of the first type of LED according to an embodiment of the present application. As shown in Figure 9 the figure, the shape of the first magnetic structure 350 is spherical, and a groove 341 is provided on a side of the sacrificial layer 340 facing away from the electrode post 322 of the LED 320, and the first magnetic structure 350 is disposed in the groove 341.

[0065] Applying a first preset pressure that makes the growth substrate 300 and the transient substrate 500 approach each other, the distance between the growth substrate 300 and the transient substrate 500 gradually decreases, so that the electrode post 322 of the LED 320 is inserted into the first adhesive layer 540 of the transient substrate 500 until the LED 320 stops moving under the repulsive force of the first magnetic structure 350 and the second magnetic structure 520.

[0066] Since the second magnetic structure 520 exerts a deflecting force on the first magnetic structure 350, by providing a groove 341 on the side of the sacrificial layer 340 facing away from the electrode post 322 of the LED 320 and then disposing the first magnetic structure 350 in the groove 341, relative rotation can occur between the first magnetic structure 350 and the sacrificial layer 340 when the first magnetic structure 350 deflects, without applying the deflecting force to the electrode post 322 of the LED 320, thus avoiding the damage of the electrode post 322 of the LED 320 when the first magnetic structure 350 and the second magnetic structure 520 approach each other.

[0067] Figure 10 It is a schematic diagram of the second LED transfer device according to an embodiment of the present application. Figure 11 It is a schematic diagram of the growth substrate of the second LED transfer device according to an embodiment of the present application. Figure 12 It is a schematic diagram of the transient substrate of the second LED transfer device according to an embodiment of the present application. Figure 13 It is a schematic diagram of the electrode post of the LED in the growth substrate of the second LED transfer device according to an embodiment of the present application inserted on the first adhesive layer of the transient substrate, as Figures 10 - 13 shown. The difference between the second LED transfer device 10 and the first LED transfer device 10 is that the first magnetic structure 350 is disposed on the growth substrate 310 and the first magnetic structure 350 is located between two adjacent LEDs 320.

[0068] Compared with the first LED transfer device 10, since the sacrificial layer 340 and the first magnetic structure 350 are not provided on the electrode post 322 of the LED 320 on the growth substrate 300 of the second LED transfer device 10, the first magnetic structure removing device 570 does not need to be provided in the second LED transfer device 10, thereby reducing the transfer steps, improving the transfer efficiency, and reducing the equipment cost.

[0069] Since the distance between the first magnetic structure 350 and the second magnetic structure 520 becomes larger due to the first magnetic structure 350 being disposed on the growth substrate 310, a spacer block 560 can be provided to reduce the distance between the first magnetic structure 350 and the second magnetic structure 520, as follows: The second magnetic structure 520 is disposed on a side of the transient substrate 510 close to the first adhesive layer 540. The transient substrate 500 further includes a spacer block 560 disposed between the second magnetic structure 520 and the transient substrate 510, and the sum of the thickness of the spacer block 560 and the thickness of the second magnetic structure 520 is less than the thickness of the first adhesive layer 540. By means of the spacer block 560, the distance between the first magnetic structure 350 and the second magnetic structure 520 is reduced, which can prevent the electrode post 322 of the LED 320 from touching the transient substrate 510, thereby avoiding damage to the electrode post 322 of the LED 320.

[0070] Certainly, the spacer block 560 may not be provided, and a greater current is applied to the second magnetic structure 520 to increase the magnetic force of the second magnetic structure 520 to increase the repulsive force between the first magnetic structure 350 and the second magnetic structure 520.

[0071] Figure 14 It is a schematic diagram of a growth substrate of a third LED transfer device according to an embodiment of the present application. Figure 15 It is a schematic diagram of a transient substrate of a third LED transfer device according to an embodiment of the present application. Figure 16 It is a schematic diagram showing that the electrode post of the LED in the growth substrate of the third LED transfer device according to an embodiment of the present application is inserted on the first adhesive layer of the transient substrate. Figures 14 - 16 As shown, different from the second LED transfer device 10, a third magnetic structure 360 is newly added to the growth substrate 300 of the third LED transfer device 10, and a fourth magnetic structure 530 is newly added to the transient substrate 500, which are specifically as follows: The growth substrate 300 further includes a third magnetic structure 360 disposed on a side of the electrode post 322 of the LED 320 away from the growth substrate 310; the transient substrate 500 further includes a fourth magnetic structure 530 disposed on the transient substrate 510, and the fourth magnetic structure 530 and the second magnetic structure 520 are spaced apart; the third magnetic structure 360 and the fourth magnetic structure 530 are used to apply a first preset pressure of approaching each other to the growth substrate 300 or the transient substrate 500, and the distance between the growth substrate 300 and the transient substrate 500 is gradually reduced, so that an attractive force is generated when the electrode post 322 of the LED 320 is inserted into the first adhesive layer 540 of the transient substrate 500.

[0072] With respect to the transfer device 10 for the second type of LED, for the transfer device 10 for the third type of LED, the growth substrate 300 is provided with a third magnetic structure 360, and the transient substrate 500 is provided with a fourth magnetic structure 530. In this way, a first preset pressure for approaching each other is applied to the growth substrate 300 or the transient substrate 500, and the distance between the growth substrate 300 and the transient substrate 500 gradually decreases. When the electrode post 322 of the LED 320 is inserted into the first adhesive layer 540 of the transient substrate 500, an attractive force is generated, so that when the LED 320 on the growth substrate 300 is transferred to the transient substrate 500, it can be transferred to a specific position on the transient substrate 500. It should be noted that the attractive force between the third magnetic structure 360 and the fourth magnetic structure 530 is less than the repulsive force between the first magnetic structure 350 and the second magnetic structure 520.

[0073] It should be noted that the limitations on the steps involved in this solution do not, on the premise of not affecting the implementation of the specific solution, be regarded as defining the order of the steps. The steps written in the front can be executed first, or can be executed later, or even can be executed simultaneously. As long as this solution can be implemented, it should be regarded as falling within the protection scope of this application.

[0074] It should be noted that the inventive concept of this application can form a very large number of embodiments. However, due to the limited space of the application documents, it is impossible to list them one by one. Therefore, on the premise of not conflicting with each other, the above-described embodiments or technical features can be arbitrarily combined to form new embodiments. After the combination of each embodiment or technical feature, the original technical effect will be enhanced.

[0075] The above content is a further detailed description of this application in combination with specific optional implementation manners. It cannot be determined that the specific implementation of this application is only limited to these descriptions. For those of ordinary skill in the technical field to which this application belongs, without departing from the concept of this application, several simple deductions or substitutions can be made, and all should be regarded as falling within the protection scope of this application.

Claims

1. A transfer method for LEDs, which is used to transfer the LEDs on a growth substrate to a transient substrate, characterized in that, The transfer method of the LED includes the steps of: Providing a growth substrate and a transient substrate, where the growth substrate includes a growth substrate, an LED, and a first magnetic structure, and both the first magnetic structure and the LED are disposed on the growth substrate; the transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer, and both the second magnetic structure and the first adhesive layer are disposed on the transient substrate; Placing the side of the growth substrate with the LED facing the side of the transient substrate with the first adhesive layer, and the electrode post of the LED facing the first adhesive layer, and the sides of the first magnetic structure on the growth substrate and the second magnetic structure on the transient substrate that are close to each other have the same polarity; Applying a first preset pressure for the growth substrate and the transient substrate to approach each other, the distance between the growth substrate and the transient substrate gradually decreases, so that the electrode post of the LED is inserted into the first adhesive layer of the transient substrate until the LED no longer moves under the repulsive force of the first magnetic structure and the second magnetic structure, and the first preset pressure ensures that the electrode post of the LED does not contact the transient substrate and the second magnetic structure; Separating the growth substrate and the LED to transfer the LED to the transient substrate.

2. The transfer method of the LED according to claim 1, wherein, The first magnetic structure is disposed on the side of the electrode post of the LED away from the substrate; the growth substrate further includes a sacrificial layer, and the sacrificial layer is disposed between the electrode post of the LED and the first magnetic structure; After the step of separating the growth substrate and the LED to transfer the LED to the transient substrate, the method further includes: Providing a transfer substrate, where the transfer substrate includes a transfer substrate and a second adhesive layer, and the second adhesive layer is disposed on the transfer substrate; Placing the side of the transfer substrate with the second adhesive layer facing the side of the transient substrate with the first adhesive layer, and the chip of the LED facing the second adhesive layer; Applying a second preset pressure for the transfer substrate and the transient substrate to approach each other, the distance between the transfer substrate and the transient substrate gradually decreases, so that the chip of the LED is bonded to the second adhesive layer of the transfer substrate; Debonding the first adhesive layer; Applying a third preset pressure for the transfer substrate and the transient substrate to move away from each other to transfer the LED to the second adhesive layer on the transfer substrate; Removing the sacrificial layer so that the first magnetic structure is separated from the electrode post of the LED.

3. The transfer method of the LED according to claim 1, wherein In the step of providing a growth substrate and a transient substrate, where the growth substrate includes a growth substrate, an LED, and a first magnetic structure, and both the first magnetic structure and the LED are disposed on the growth substrate; the transient substrate includes a transient substrate, a second magnetic structure, and a first adhesive layer, and both the second magnetic structure and the first adhesive layer are disposed on the transient substrate: The first magnetic structure is disposed on the growth substrate, and the first magnetic structure is located between two adjacent LEDs; After the step of separating the growth substrate and the LED to transfer the LED to the transient substrate, the method further includes: A transfer substrate is provided, which includes a transfer substrate and a second adhesive layer, and the second adhesive layer is disposed on the transfer substrate; The side of the transfer substrate with the second adhesive layer is opposed to the side of the transient substrate with the first adhesive layer, and the chip of the LED faces the second adhesive layer; Apply a second preset pressure for the transfer substrate and the transient substrate to approach each other, and the distance between the transfer substrate and the transient substrate gradually decreases, so that the chip of the LED is bonded to the second adhesive layer of the transfer substrate; Debond the first adhesive layer; Apply a third preset pressure for the transfer substrate and the transient substrate to move away from each other to transfer the LED onto the second adhesive layer on the transfer substrate.

4. A transfer device for LEDs, wherein the LEDs include chips and electrode posts, and the electrode posts are connected to the chips; characterized in that, The transfer device for the LED includes: A first machine platform, the first machine platform includes an LED generating device, a first magnetic structure generating device and a growth substrate, the growth substrate includes a growth substrate, an LED and a first magnetic structure, and the first magnetic structure and the LED are disposed on the growth substrate; the LED generating device is used to form the LED on the growth substrate; the first magnetic structure is used to form the first magnetic structure on the growth substrate; A second machine platform, the second machine platform includes a transient substrate, a growth substrate peeling device and a pressing device, the transient substrate includes a transient substrate, a second magnetic structure and a first adhesive layer, and the second magnetic structure and the first adhesive layer are disposed on the transient substrate; The pressing device is used to apply a first preset pressure for the growth substrate and the transient substrate to approach each other, and the distance between the growth substrate and the transient substrate gradually decreases, so that the electrode column of the LED is inserted into the first adhesive layer of the transient substrate until the LED stops moving under the repulsive force of the first magnetic structure and the second magnetic structure, and the first preset pressure ensures that the electrode column of the LED does not contact the transient substrate and the second magnetic structure; The growth substrate peeling device is used to separate the growth substrate and the LED.

5. The transfer device for an LED according to claim 4, wherein The second machine platform further includes a debonding device and a transfer substrate, the transfer substrate includes a transfer substrate and a second adhesive layer, and the second adhesive layer is disposed on the transfer substrate; The second adhesive layer on the transfer substrate is used to bond the chip of the LED; The debonding device is used to debond the first adhesive layer.

6. The transfer device for an LED according to claim 4, wherein The first magnetic structure is disposed on the side of the electrode column of the LED away from the growth substrate.

7. The transfer device for an LED according to claim 6, wherein The growth substrate further includes a sacrificial layer, and the sacrificial layer is disposed between the electrode column of the LED and the first magnetic structure.

8. The transfer device for LEDs according to claim 4, characterized in that, The first magnetic structure is disposed on the growth substrate, and the first magnetic structure is located between two adjacent LEDs.

9. The transferring device for LEDs according to Claim 8, characterized in that, The second magnetic structure is disposed on a side of the transient substrate close to the first adhesive layer. The transient substrate further includes a spacer block, the spacer block is disposed between the second magnetic structure and the transient substrate, and the sum of the thickness of the spacer block and the thickness of the second magnetic structure is less than the thickness of the first adhesive layer.

10. The transfer device for LEDs according to claim 8, characterized in that, The growth substrate further includes a third magnetic structure, and the third magnetic structure is disposed on a side of the electrode post of the LED away from the growth substrate. The transient substrate further includes a fourth magnetic structure, the fourth magnetic structure is disposed on the transient substrate, and the fourth magnetic structure and the second magnetic structure are spaced apart. The third magnetic structure and the fourth magnetic structure are configured to apply a first preset pressure to the growth substrate or the transient substrate to approach each other, and the distance between the growth substrate and the transient substrate gradually decreases, so that an attractive force is generated when the electrode post of the LED is inserted into the first adhesive layer of the transient substrate.

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