Online switching method, device and equipment for producing silicon single crystal rods with different sizes

Abstract

The invention provides an on-line switching method, device and equipment for producing silicon single crystal rods with different sizes, and effectively solves the negative influence caused by size switching of the produced silicon single crystal rods by blowing out a single crystal furnace and replacing corresponding thermal field components. The method comprises the following steps: acquiring various size parameters and corresponding first parameter values; determining a plurality of size parameters and corresponding second parameter values when the single crystal furnace produces a silicon single crystal rod with a second size in a second time period in the future, and comparing the first parameter values with the second parameter values to obtain a comparison result; based on the comparison result, obtaining adjustment values under a plurality of dimension dimensions to generate a corresponding adjustment instruction; and respectively sending the adjustment instruction to the heating mechanism, the water cooling mechanism and the crystal pulling mechanism so as to control the heating mechanism, the water cooling mechanism and the crystal pulling mechanism to respectively respond to the adjustment instruction so as to carry out online switching of production dimension parameters.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal rod production. Specifically, it relates to a method, device and equipment for online switching of single crystal rods of different sizes during production. Background Art

[0002] During the production of single crystal rods, the Czochralski method is usually used to grow single crystal rods in a single crystal furnace. In the prior art, when producing single crystal rods of different sizes (such as 12 inches, 11 inches, 10 inches), it is necessary to stop the furnace and replace corresponding thermal field components (such as water-cooled screens, heaters, etc.) to meet the production requirements of single crystal rods of different sizes. This production method has the following problems:

[0003] Long furnace shutdown time: Each time the production size is switched, it is necessary to stop the furnace, replace components and readjust the furnace environment, resulting in low production efficiency;

[0004] High cost: Frequent replacement of components such as water-cooled screens increases the mechanical wear of the equipment and also increases the maintenance cost for the single crystal furnace;

[0005] High energy consumption: Stopping and restarting the single crystal furnace requires a large amount of energy;

[0006] Poor flexibility: It is unable to quickly respond to market demands and cannot quickly switch to producing single crystal rods of different sizes. Summary of the Invention

[0007] In view of this, the purpose of the present application is to provide a method, device and equipment for online switching of single crystal rods of different sizes. This method, device and equipment for online switching of single crystal rods of different sizes effectively solve the negative impacts brought about by stopping the single crystal furnace and replacing corresponding thermal field components to achieve the size switching of the produced single crystal rods.

[0008] In a first aspect, an embodiment of the present application provides a method for online switching of single crystal rods of different sizes, which is applied to a single crystal furnace. The single crystal furnace includes a heating mechanism, a water cooling mechanism, and a crystal pulling mechanism. The method includes:

[0009] Obtain various size parameters and corresponding first parameter values when the single crystal furnace produces single crystal rods of a first size in a first time period; the first time period is adjacent to a second time period;

[0010] Determine various size parameters and corresponding second parameter values when the single crystal furnace produces single crystal rods of a second size in a future second time period, and compare the first parameter values with the second parameter values to obtain a comparison result;

[0011] Calculate the numerical value of the first parameter and the numerical value of the second parameter based on the comparison result to obtain adjustment values under multiple dimensional sizes, so as to generate corresponding adjustment instructions based on the adjustment values of the multiple dimensional sizes;

[0012] Send the adjustment instructions to the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism respectively, so as to control the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respond to the adjustment instructions respectively to perform online switching of production size parameters.

[0013] Combined with the first aspect, the embodiment of the present application provides a first possible implementation manner of the first aspect, wherein the calculating the numerical value of the first parameter and the numerical value of the second parameter based on the comparison result to obtain adjustment values under multiple dimensional sizes includes:

[0014] Determine the numerical value of the second parameter of the second size under multiple dimensional sizes based on the production process and production quality;

[0015] Calculate the numerical value of the first parameter and the numerical value of the second parameter respectively according to the multiple dimensional sizes to obtain corresponding adjustment values.

[0016] Combined with the first aspect, the embodiment of the present application provides a second possible implementation manner of the first aspect, wherein the dimensional size at least includes a heating dimension;

[0017] The calculating the numerical value of the first parameter and the numerical value of the second parameter respectively according to the multiple dimensional sizes to obtain corresponding adjustment values includes:

[0018] Determine multiple heating parameters of the single crystal furnace in the heating dimension, and call the parameter values corresponding to the multiple heating parameters in the first size and the second size;

[0019] Calculate the parameter values corresponding to each heating parameter to obtain a calculation result, and fuse the calculation results to obtain a heating adjustment value.

[0020] Combined with the first aspect, the embodiment of the present application provides a third possible implementation manner of the first aspect, wherein the dimensional size at least includes a crystal pulling dimension;

[0021] The calculating the numerical value of the first parameter and the numerical value of the second parameter respectively according to the multiple dimensional sizes to obtain corresponding adjustment values includes:

[0022] Determine multiple crystal pulling parameters of the single crystal furnace in the crystal pulling dimension based on the structure of the crystal pulling mechanism;

[0023] Calculate the parameter values corresponding to each crystal pulling parameter to obtain a calculation result, and fuse the calculation results to obtain a crystal pulling adjustment value.

[0024] In combination with the first aspect, an embodiment of the present application provides a fourth possible implementation manner of the first aspect, wherein the dimensionality at least includes a water-cooling dimension;

[0025] Calculating the corresponding adjustment values of the first parameter value and the second parameter value according to the multiple dimensionalities respectively includes:

[0026] Determining multiple water-cooling parameters of the single crystal furnace in the heating dimension based on the structure of the water-cooling mechanism;

[0027] Calculating the parameter values corresponding to each water-cooling parameter respectively to obtain a calculation result, and fusing the calculation results to obtain a water-cooling adjustment value.

[0028] In combination with the first aspect, an embodiment of the present application provides a fifth possible implementation manner of the first aspect, wherein generating a corresponding adjustment instruction based on the adjustment values of the multiple dimensionalities includes:

[0029] Extracting the heating adjustment value, the crystal pulling adjustment value, and the water-cooling adjustment value to obtain the corresponding dimensionality, so as to generate an identifier based on the corresponding dimensionality;

[0030] Generating the adjustment instruction based on the heating adjustment value, the crystal pulling adjustment value, the water-cooling adjustment value and the corresponding identifier.

[0031] In combination with the first aspect, an embodiment of the present application provides a sixth possible implementation manner of the first aspect, wherein controlling the heating mechanism, the water-cooling mechanism, and the crystal pulling mechanism to respectively respond to the adjustment instruction to perform online switching of production dimensional parameters includes:

[0032] Controlling the heating mechanism, the water-cooling mechanism, and the crystal pulling mechanism to respectively identify the adjustment instruction to obtain the corresponding adjustment value;

[0033] Reading and invoking the adjustment method for the target mechanism in the adjustment instruction to perform parameter adjustment on the target mechanism based on the adjustment value.

[0034] In a second aspect, an embodiment of the present application provides an online switching device for producing single crystal rods of different sizes, which is applied to a single crystal furnace. The single crystal furnace includes a heating mechanism, a water-cooling mechanism, and a crystal pulling mechanism. The device includes:

[0035] An acquisition module, configured to acquire various dimensional parameters and corresponding first parameter values of the single crystal furnace when producing single crystal rods of a first size in a first time period; the first time period is adjacent to a second time period;

[0036] A comparison module, configured to determine various dimensional parameters and corresponding second parameter values when the single crystal furnace produces single crystal rods of a second size in a future second time period, and compare the first parameter value with the second parameter value to obtain a comparison result;

[0037] A calculation module, configured to calculate the first parameter value and the second parameter value based on the comparison result to obtain adjustment values under multiple dimensionalities, so as to generate corresponding adjustment instructions based on the adjustment values under the multiple dimensionalities;

[0038] A switching module, configured to separately send the adjustment instructions to the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism, so as to control the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respectively respond to the adjustment instructions to perform online switching of production dimensional parameters.

[0039] In a third aspect, an embodiment of the present application provides an electronic device, including: a processor, a memory, and a bus. The memory stores machine-readable instructions executable by the processor. When the electronic device runs, the processor communicates with the memory through the bus. When the machine-readable instructions are executed by the processor, the steps of any one of the online switching methods for producing single crystal rods of different sizes are executed.

[0040] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, on which a computer program is stored. When the computer program is run by a processor, the steps of any one of the online switching methods for producing single crystal rods of different sizes are executed.

[0041] An online switching method for producing single crystal silicon rods of different sizes provided by an embodiment of the present application is applied to a single crystal furnace. The single crystal furnace includes a heating mechanism, a water cooling mechanism, and a crystal pulling mechanism. The method includes: obtaining various size parameters and corresponding first parameter values when the single crystal furnace produces single crystal silicon rods of a first size in a first time period; the first time period is adjacent to a second time period; determining various size parameters and corresponding second parameter values when the single crystal furnace produces single crystal silicon rods of a second size in a future second time period, and comparing the first parameter values with the second parameter values to obtain a comparison result; calculating the first parameter values and the second parameter values based on the comparison result to obtain adjustment values in multiple size dimensions, so as to generate corresponding adjustment instructions based on the adjustment values in the multiple size dimensions; respectively sending the adjustment instructions to the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to control the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respectively respond to the adjustment instructions to perform online switching of production size parameters, thereby providing an online switching of the production size of single crystal silicon rods that can be realized without stopping the single crystal furnace, avoiding the negative impacts brought by stopping the single crystal furnace and replacing corresponding hot field components to realize the size switching of the produced single crystal silicon rods, ensuring the flexibility of the single crystal furnace in producing single crystal silicon rods of different sizes, avoiding the problems of equipment loss and energy consumption generated by the single crystal furnace, and also avoiding the problem of increased production cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0043] Figure 1 FIG. shows a schematic flow chart of an online switching method for producing single crystal silicon rods of different sizes provided by an embodiment of the present application;

[0044] Figure 2 FIG. shows a schematic flow chart of a single crystal furnace pulling a single crystal silicon rod provided by an embodiment of the present application;

[0045] Figure 3 FIG. shows a partial structural schematic diagram of a single crystal furnace for producing 10-inch and 11-inch single crystal silicon rods provided by an embodiment of the present application;

[0046] Figure 4 FIG. shows a partial structural schematic diagram of a single crystal furnace for producing 12-inch single crystal silicon rods provided by an embodiment of the present application;

[0047] Figure 5 FIG. shows a schematic diagram of an online detection single crystal furnace provided by an embodiment of the present application;

[0048] Figure 6 shows a structural block diagram of an on - line switching device for producing single - crystal rods of different sizes provided by an embodiment of the present application;

[0049] Figure 7 shows a structural block diagram of an electronic device provided by an embodiment of the present application. Detailed implementation manners

[0050] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It should be understood that the accompanying drawings in the present application are only for the purposes of illustration and description, and are not used to limit the protection scope of the present application. Additionally, it should be understood that the schematic drawings are not drawn to scale. The flowcharts used in the present application show operations implemented according to some embodiments of the present application. It should be understood that the operations in the flowcharts may not be implemented in sequence, and steps without logical context relationships may be reversed or implemented simultaneously. In addition, those skilled in the art can add one or more other operations to the flowchart or remove one or more operations from the flowchart under the guidance of the content of the present application.

[0051] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application usually described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application to be protected, but only represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0052] It should be noted that the term "including" will be used in the embodiments of the present application to indicate the existence of the features stated hereinafter, but does not exclude the addition of other features.

[0053] Currently, the single - crystal furnace is shut down and corresponding thermal - field components (such as water - cooled screens, heaters, etc.) are replaced to meet the production requirements of single - crystal rods of different sizes. This production method has the following problems: long furnace - shutdown time: Each time the production size is switched, the furnace needs to be shut down, components need to be replaced, and the furnace internal environment needs to be readjusted, resulting in low production efficiency; high cost: Frequent replacement of components such as water - cooled screens increases the mechanical wear of the equipment and also increases the maintenance cost for the single - crystal furnace; high energy consumption: Shutting down and restarting the single - crystal furnace consume a large amount of energy; poor flexibility: It cannot quickly respond to market demands and cannot quickly switch to producing single - crystal rods of different sizes.

[0054] Based on this, the embodiments of the present application provide an online switching method, device and equipment for producing single crystal silicon rods of different sizes, which will be described below through embodiments.

[0055] Embodiment 1

[0056] For the convenience of understanding this embodiment, first, a detailed introduction will be given to an online switching method for producing single crystal silicon rods of different sizes disclosed in the embodiments of the present application. As Figure 1 shown in the flowchart of an online switching method for producing single crystal silicon rods of different sizes, an online switching method for producing single crystal silicon rods of different sizes provided by the present application is applied to a single crystal furnace, and the single crystal furnace includes a heating mechanism, a water cooling mechanism, and a crystal pulling mechanism. The method includes:

[0057] S101. Obtain various size parameters and corresponding first parameter values when the single crystal furnace produces single crystal silicon rods of a first size in a first time period; the first time period is adjacent to a second time period;

[0058] S102. Determine various size parameters and corresponding second parameter values when the single crystal furnace produces single crystal silicon rods of a second size in a future second time period, and compare the first parameter values with the second parameter values to obtain a comparison result;

[0059] S103. Calculate the first parameter values and the second parameter values based on the comparison result to obtain adjustment values in multiple size dimensions, so as to generate corresponding adjustment instructions based on the adjustment values in the multiple size dimensions;

[0060] S104. Send the adjustment instructions to the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism respectively, so as to control the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respond to the adjustment instructions respectively to perform online switching of production size parameters.

[0061] In step S101, the single crystal furnace is equipped with a heating mechanism, a water cooling mechanism, and a crystal pulling mechanism. The heating mechanism is a heater and a guide cylinder. The water cooling mechanism is a water-cooled thermal shield and a variable diameter ring in the single crystal furnace. The crystal pulling mechanism includes a seed chuck, a lifting motor, etc. Among them, the heating mechanism is responsible for providing a high-temperature environment for melting silicon materials and maintaining growth; the water cooling mechanism is responsible for controlling the temperature in the furnace, preventing the equipment from overheating, and ensuring temperature stability; the crystal pulling mechanism realizes the growth of single crystal silicon rods by precisely controlling the rotation and lifting speed of the seed crystal. As Figure 2 shown in the flowchart of the single crystal furnace pulling a single crystal silicon rod, obtain various size parameters and corresponding first parameter values when the single crystal furnace produces single crystal silicon rods of a first size in a first time period. The first size can be 12 inches, 11 inches, and 10 inches. As Figure 3The following is a schematic diagram of the partial structure of the single crystal furnace for producing 10-inch and 11-inch single crystals. Figure 4 The diagram shows a partial structural diagram of a 12-inch single crystal furnace. The multiple first size parameters are also for the heating mechanism, water cooling mechanism, and crystal pulling mechanism, specifically including heating power parameters, thermal field distribution parameters, and radial temperature gradient parameters of the heating mechanism, water cooling screen angle parameters, cooling water flow parameters, and water cooling hot screen height parameters of the water cooling mechanism, and crystal pulling speed parameters and crystal pulling angle parameters of the crystal pulling mechanism, and obtaining parameter values of the above multiple first size parameters at the first size. The specific acquisition method can be sensor detection or acquisition from log data, and the first time period is adjacent to the second time period; the first time period is the time from the start of the single crystal furnace to the end of the production of single crystal silicon rods of the first size to the end of the production of single crystal silicon rods of the first size, and the second time period is the time from the start of the single crystal furnace to the end of the production of single crystal silicon rods of the second size, and the second time period is in the future, that is, it has not occurred, and the first time period and the second time period are adjacent to each other, which means that the single crystal furnace is adjacent in operating time, and can also refer to being adjacent in a practical sense.

[0062] In step S102, when the single crystal furnace produces single crystal silicon rods of a first size, it determines based on preset production tasks and production requirements that single crystal silicon rods of a second size need to be produced in a second time period adjacent to the first time period, and then predetermines multiple second parameter values of single crystal silicon rods of the second size to be produced by the single crystal furnace in the future second time period, and compares the first parameter value with the second parameter value to obtain a comparison result. If the comparison result is that the first parameter value and the second parameter value corresponding to the first size and the second size are the same, then it is determined that the first size and the second size are the same size. At this time, there is no need to adjust the first parameter value of the single crystal furnace, and there is no need to switch to produce. If the comparison result is that the first parameter value and the second parameter value corresponding to the first size and the second size are different, then it is determined that the first size and the second size are not the same size. At this time, the first parameter value of the single crystal furnace needs to be adjusted, and the size of the single crystal furnace needs to be switched before the production of single crystal silicon rods of the second size can be carried out.

[0063] In step S103, after obtaining the comparison result, determine the relationship between the first parameter value and the second parameter value based on the comparison result. If the values of the first parameter value and the second parameter value are different, calculate the first parameter value and the second parameter value based on multiple size dimensions to obtain adjustment values under multiple size dimensions. The size dimensions correspond to the heating mechanism, water cooling mechanism, and crystal pulling mechanism included in the single crystal furnace, namely, the heating dimension, the water cooling dimension, and the crystal pulling dimension. Then obtain the adjustment values corresponding to the above three dimensions, and generate corresponding adjustment instructions based on the adjustment values of the multiple size dimensions, so as to achieve targeted adjustment for the heating mechanism, water cooling mechanism, and crystal pulling mechanism, thereby ensuring the accuracy of the size when producing single crystal rods. The range of parameter adjustment under different sizes is shown in Table 1.

[0064] Table 1 Range of numerical adjustment of some parameters under different sizes

[0065]

[0066] In a specific implementation process of step S103, there is an embodiment: the calculating the first parameter value and the second parameter value based on the comparison result to obtain adjustment values under multiple size dimensions includes:

[0067] S1031. Determine the second parameter value of the second size under multiple size dimensions based on the production process and production quality;

[0068] S1032. Calculate the first parameter value and the second parameter value respectively according to the multiple size dimensions to obtain corresponding adjustment values.

[0069] In steps S1031 - S1032, the production process can be a unique process for producing the single crystal rod, and the production quality can be for the production requirements of the single crystal rod. The production process and production quality can also be obtained by calling an online search tool to search for relevant information on the production process and production quality of the single crystal rod, and clarify the key factors affecting the size parameters of the single crystal rod during the production process. Then determine multiple size dimensions based on the key factors. The multiple size dimensions are respectively the heating dimension, the water cooling dimension, and the crystal pulling dimension. Call the online search tool again to search or determine the second parameter value of the second size parameter under multiple size dimensions based on historical production experience. Then calculate the first parameter value and the second parameter value respectively according to the multiple size dimensions and according to a preset calculation method to obtain corresponding adjustment values for targeted adjustment.

[0070] In a specific implementation process of step S1032, there is an embodiment: the size dimension includes at least the heating dimension;

[0071] Calculating the first parameter value and the second parameter value respectively according to the multiple dimensional sizes to obtain corresponding adjustment values includes:

[0072] S103211. Determine multiple heating parameters of the single crystal furnace in the heating dimension, and call the parameter values corresponding to the multiple heating parameters in the first dimension and the second dimension respectively;

[0073] S103212. Calculate the parameter values corresponding to each heating parameter to obtain calculation results, and fuse the calculation results to obtain a heating adjustment value.

[0074] In steps S103211 - S103212, if there are multiple parameters in the heating dimension, the parameters are screened, and the parameters with a large influence on the single crystal rod are selected as heating parameters, so as to determine multiple heating parameters of the single crystal furnace in the heating dimension. The heating parameters include heating power parameters, thermal field distribution parameters, and radial temperature gradient parameters. As shown in Table 2, the heating power values of the heating power parameters at different crystal lengths under different sizes are given. Then, in this heating dimension, call the parameter values corresponding to the multiple heating parameters in the first dimension and the second dimension respectively, and calculate the parameter values corresponding to each heating parameter to obtain calculation results. For example, when the first dimension is 10 inches, the heating power is 38 kw, and when the first dimension is 10 inches, the heating power is 42.5 kw. Then, the calculation result under the heating power parameter is 42.5 kw - 38 kw = 4.5 kw. In a similar manner, obtain the calculation results under the thermal field distribution parameter and the radial temperature gradient parameter, and fuse the calculation results corresponding to the above three heating parameters to obtain a heating adjustment value. For example, using the linear weighting method, set the influence weights of the calculation results corresponding to the above three heating parameters based on the influence degrees of the above three heating parameters on the single crystal. Then, calculate based on the above three calculation results and the corresponding influence weights to obtain the final heating adjustment value. It is also possible to conduct a simulation test based on the heating adjustment value to ensure the accuracy of the heating adjustment value.

[0075] Table 2 Heating power values of the heating power parameter at different crystal lengths under different sizes

[0076]

[0077] In the specific implementation process of step S1032, there is another embodiment: the dimensional size at least includes the crystal pulling dimension;

[0078] Calculating the first parameter value and the second parameter value respectively according to the multiple dimensional sizes to obtain corresponding adjustment values includes:

[0079] S103221. Determine multiple crystal pulling parameters of the single crystal furnace in the heating dimension based on the structure of the crystal pulling mechanism;

[0080] S103222. Calculate the parameter values corresponding to each crystal pulling parameter to obtain a calculation result, and fuse the calculation results to obtain a crystal pulling adjustment value.

[0081] In steps S103221 - S103222, in the crystal pulling dimension, calculate the influence degrees of multiple parameters in the crystal pulling dimension, and screen the parameters according to the obtained influence degree of each parameter, so as to obtain the parameters that have a greater influence on the crystal pulling effect of the crystal pulling mechanism as the crystal pulling parameters. The crystal pulling parameters include the crystal pulling speed parameter and the crystal pulling angle parameter. Then, calculate based on the parameter value of the crystal pulling speed parameter in the first dimension and the parameter value in the second dimension to obtain the calculation result corresponding to the crystal pulling speed parameter. The calculation method of the calculation result of the crystal pulling angle parameter is the same as that of the crystal pulling speed parameter. After obtaining the calculation result of the crystal pulling angle parameter and the calculation result of the crystal pulling speed parameter, fuse the calculation result of the crystal pulling angle parameter and the calculation result of the crystal pulling speed parameter based on the interaction between the crystal pulling angle parameter, the crystal pulling speed parameter, and process constraints. The specific fusion method can be the weighted average method, so as to obtain the crystal pulling adjustment value, thereby controlling the crystal pulling structure to be adjusted based on the crystal pulling adjustment value, and also can perform simulation tests based on the crystal pulling adjustment value to ensure the accuracy of the crystal pulling adjustment value.

[0082] In the specific implementation process of step S1032, there is also an embodiment: the dimension at least includes the water cooling dimension;

[0083] Calculating the first parameter value and the second parameter value according to the multiple dimensions respectively to obtain the corresponding adjustment value includes:

[0084] S103231. Determine multiple water cooling parameters of the single crystal furnace in the heating dimension based on the structure of the water cooling mechanism;

[0085] S103232. Calculate the parameter values corresponding to each water cooling parameter to obtain a calculation result, and fuse the calculation results to obtain a water cooling adjustment value.

[0086] In steps S103231 - S103232, under the water cooling dimension, multiple parameters affecting the water cooling mechanism are obtained, and the influence degree of the water cooling effect is calculated based on the multiple parameters. Then, the parameters are screened according to the influence degree obtained for each parameter, so that the parameters that have a greater impact on the crystal pulling effect of the water cooling mechanism are the water cooling parameters. The water cooling parameters include the water cooling screen angle parameter, the cooling water flow rate parameter, and the water cooling hot screen height parameter. Then, the calculation result corresponding to the water cooling screen angle parameter is calculated based on the parameter value of the water cooling screen angle parameter under the first dimension and the parameter value under the second dimension. The calculation methods of the calculation results of the cooling water flow rate parameter and the water cooling hot screen height parameter are the same as that of the calculation result of the water cooling screen angle parameter. After obtaining the calculation results corresponding to the water cooling screen angle parameter, the cooling water flow rate parameter, and the water cooling hot screen height parameter respectively, the calculation results corresponding to the water cooling screen angle parameter, the cooling water flow rate parameter, and the water cooling hot screen height parameter are fused based on the interaction and process constraints among the water cooling screen angle parameter, the cooling water flow rate parameter, and the water cooling hot screen height parameter. The specific fusion method can be the weighted average method, so as to obtain the crystal pulling adjustment value, and then control the crystal pulling structure to be adjusted based on the crystal pulling adjustment value. The water cooling adjustment value can also be used for simulation testing to ensure the accuracy of the water cooling adjustment value.

[0087] In the specific implementation process of step S1032, there is another embodiment: The generating the corresponding adjustment instruction based on the adjustment value of the multiple dimension includes:

[0088] S103241. Extract the heating adjustment value, the crystal pulling adjustment value, and the water cooling adjustment value to obtain the corresponding dimension, so as to generate an identifier based on the corresponding dimension;

[0089] S103242. Generate the adjustment instruction based on the heating adjustment value, the crystal pulling adjustment value, the water cooling adjustment value, and the corresponding identifier.

[0090] In steps S103241 - S103242, after calculating the heating adjustment value, the crystal pulling adjustment value, and the water cooling adjustment value, extract the heating adjustment value, the crystal pulling adjustment value, and the water cooling adjustment value to obtain corresponding dimensional sizes, that is, extract the heating dimension, the crystal pulling dimension, and the water cooling dimension corresponding to the heating adjustment value, the crystal pulling adjustment value, and the water cooling adjustment value respectively, to generate an identifier based on the corresponding dimensional sizes, that is, let the heating dimension, the crystal pulling dimension, and the water cooling dimension be the identifiers corresponding to the heating adjustment value, the crystal pulling adjustment value, and the water cooling adjustment value respectively, and generate the adjustment instruction through the identifier and the corresponding heating adjustment value, crystal pulling adjustment value, and water cooling adjustment value based on a pre - set instruction generation model. The identifier is used for the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to identify, so as to realize the sequential identification or simultaneous identification and sequential adjustment or simultaneous adjustment of the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism. If it is sequential identification or sequential adjustment, the sequential order of the three mechanisms is set based on the quality of the single - crystal silicon rod, the production process, and the stability of the single - crystal furnace.

[0091] In step S104, after obtaining the adjustment instruction, send the adjustment instruction to the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism respectively. The heating mechanism, the water cooling mechanism, and the crystal pulling mechanism identify the instruction based on the preset identification order, read and analyze the corresponding adjustment value based on the identifier on the adjustment value, and control the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respond to the adjustment instruction respectively to perform the online switching of the production size parameters of the single - crystal furnace, thus avoiding the negative impact on the single - crystal furnace caused by the furnace - stopping operation of the single - crystal furnace, ensuring energy, and accelerating the production progress. If the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism cannot receive the adjustment instruction, two methods of resending the instruction at intervals or timing out and switching to the local control mode are adopted to receive the adjustment instruction in time.

[0092] This application also sets up a real - time monitoring and dynamic adjustment technology for the production process of single - crystal silicon rods of different sizes in the computer scheduling workshop where the single - crystal furnace is located, such as Figure 5 shown. By real - time monitoring the growth of the single - crystal silicon rod and dynamically adjusting various parameters, the smoothness of the switching process and the quality of the single - crystal silicon rod are ensured.

[0093] In a specific implementation process of step S104, there is an embodiment: The control that the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism respond to the adjustment instruction respectively to perform the online switching of the production size parameters includes:

[0094] S1041. Control the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respectively identify the adjustment instruction to obtain the corresponding adjustment value;

[0095] S1042. Read and call the adjustment method for the target mechanism in the adjustment instruction to perform parameter adjustment on the target mechanism based on the adjustment value.

[0096] In steps S1041 - S1042, after receiving the adjustment instruction, the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism identify their corresponding adjustment values based on the identifier carried by the adjustment value in the adjustment instruction, and extract the corresponding adjustment values, that is, the heating mechanism extracts the heating adjustment value, the crystal pulling mechanism extracts the crystal pulling adjustment value, and the water cooling mechanism extracts the water cooling adjustment value. And based on the adjustment methods set for the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism in the adjustment instruction, when the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism obtain the adjustment values, the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism perform parameter adjustment by executing the corresponding adjustment methods based on the corresponding adjustment values. For example, the heating mechanism performs parameter adjustment by executing the corresponding adjustment method based on the heating adjustment value. Specifically, the heating mechanism includes a PID controller and adjusts the heating power according to the heating adjustment value; the water cooling mechanism uses a flow control valve and adjusts the valve opening according to the water cooling adjustment value; the crystal pulling mechanism adjusts the speed or position of the servo motor to control the crystal diameter of the single crystal rod, and records the adjustment process in the log data for subsequent analysis and fault troubleshooting.

[0097] Embodiment 2

[0098] This application also provides a first crystal seeding calibration device for a single crystal furnace, as Figure 6 shown in the block diagram of a first crystal seeding calibration device for a single crystal furnace. The functions implemented by this first crystal seeding calibration device correspond to the steps of performing a first crystal seeding calibration method for a single crystal furnace on a terminal device. This device can be understood as a component of a server including a processor. The on - line switching device for producing single crystal rods of different sizes described in this application is applied to a single crystal furnace, and the single crystal furnace includes a heating mechanism, a water cooling mechanism, and a crystal pulling mechanism. The device includes:

[0099] An acquisition module 601, configured to acquire various size parameters and corresponding first parameter values of the single crystal furnace when producing single crystal rods of a first size in a first time period; the first time period is adjacent to a second time period;

[0100] A comparison module 602, configured to determine multiple dimensional parameters and corresponding second parameter values when the single crystal furnace produces single crystal rods of a second size in a future second time period, and compare the first parameter value with the second parameter value to obtain a comparison result;

[0101] A calculation module 603, configured to calculate the first parameter value and the second parameter value based on the comparison result to obtain adjustment values in multiple dimensionalities, so as to generate corresponding adjustment instructions based on the adjustment values in the multiple dimensionalities;

[0102] A switching module 604, configured to send the adjustment instructions to the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism respectively, so as to control the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respond to the adjustment instructions respectively to perform online switching of production dimensional parameters.

[0103] In a feasible implementation manner, the calculation module includes:

[0104] A first determination module, configured to determine the second parameter values of the second size in multiple dimensionalities based on the production process and production quality;

[0105] A first calculation module, configured to calculate the first parameter value and the second parameter value respectively according to the multiple dimensionalities to obtain corresponding adjustment values.

[0106] In a feasible implementation manner, the calculation module further includes:

[0107] A second determination module, configured to determine multiple heating parameters of the single crystal furnace in the heating dimension, and call the parameter values respectively corresponding to the multiple heating parameters in the first size and the second size;

[0108] A second calculation module, configured to calculate the parameter values respectively corresponding to each heating parameter to obtain a calculation result, and fuse the calculation results to obtain a heating adjustment value.

[0109] In a feasible implementation manner, the calculation module also includes:

[0110] A third determination module, configured to determine multiple crystal pulling parameters of the single crystal furnace in the heating dimension based on the structure of the crystal pulling mechanism;

[0111] A third calculation module, configured to calculate the parameter values respectively corresponding to each crystal pulling parameter to obtain a calculation result, and fuse the calculation results to obtain a crystal pulling adjustment value.

[0112] In a feasible implementation manner, the calculation module further includes:

[0113] A fourth determination module, configured to determine a plurality of water-cooling parameters of the single crystal furnace in the heating dimension based on the structure of the water-cooling mechanism;

[0114] A fourth calculation module, configured to calculate the parameter values corresponding to each water-cooling parameter to obtain a calculation result, and fuse the calculation results to obtain a water-cooling adjustment value.

[0115] In a feasible implementation manner, the calculation module further includes:

[0116] An extraction module, configured to extract the heating adjustment value, the crystal pulling adjustment value, and the water-cooling adjustment value to obtain corresponding dimensional dimensions, so as to generate an identifier based on the corresponding dimensional dimensions;

[0117] A generation module, configured to generate the adjustment instruction based on the heating adjustment value, the crystal pulling adjustment value, the water-cooling adjustment value, and the corresponding identifier.

[0118] In a feasible implementation manner, the switching module includes:

[0119] A control module, configured to control the heating mechanism, the water-cooling mechanism, and the crystal pulling mechanism to respectively identify the adjustment instruction to obtain the corresponding adjustment value;

[0120] A reading module, configured to read and call the adjustment method for the target mechanism in the adjustment instruction, so as to perform parameter adjustment on the target mechanism based on the adjustment value.

[0121] Embodiment 3

[0122] The present application further provides an electronic device, as Figure 7 shown, including: a processor 701, a memory 702, and a bus 703. The memory 702 stores machine-readable instructions executable by the processor 701. When the electronic device runs, communication is performed between the processor 701 and the memory 702 through the bus 703. When the machine-readable instructions are executed by the processor 701, the steps of any one of the methods for online switching of producing single crystal rods of different sizes are executed.

[0123] Embodiment 4

[0124] The present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is run by a processor, the steps of any one of the methods for online switching of producing single crystal rods of different sizes are executed.

[0125] Those skilled in the art can clearly understand that for the convenience and conciseness of description, the specific working processes of the systems and devices described above can refer to the corresponding processes in the method embodiments and will not be elaborated herein. In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of the modules is only a logical function division, and there can be other division methods in actual implementation. For another example, multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections between each other can be through some communication interfaces. The indirect couplings or communication connections of the devices or modules can be in electrical, mechanical, or other forms.

[0126] The modules described as separate components may or may not be physically separated. The components displayed as modules may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0127] In addition, in each embodiment of the present application, the functional units can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit.

[0128] If the functions are implemented in the form of software function units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium executable by a processor. Based on such an understanding, the essence of the technical solution of the present application, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a platform server, or a network device, etc.) to execute all or part of the steps of the methods described in each embodiment of the present application. The aforementioned storage medium includes: various media such as USB flash drives, mobile hard disks, ROM, RAM, magnetic disks, or optical discs that can store program codes.

[0129] The above is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present application, and all of them should be covered by the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An on-line switching method for producing single-crystal silicon rods of different sizes, characterized in that, Applied to a single crystal furnace, the single crystal furnace includes a heating mechanism, a water cooling mechanism, and a crystal pulling mechanism, and the method includes: Obtain various size parameters and corresponding first parameter values when the single crystal furnace produces single crystal rods of a first size in a first time period; the first time period is adjacent to a second time period; Determine various size parameters and corresponding second parameter values when the single crystal furnace produces single crystal rods of a second size in a future second time period, and compare the first parameter values with the second parameter values to obtain a comparison result; Calculate the first parameter values and the second parameter values based on the comparison result to obtain adjustment values in multiple size dimensions, so as to generate corresponding adjustment instructions based on the adjustment values in the multiple size dimensions; Send the adjustment instructions to the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism respectively, so as to control the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respond to the adjustment instructions respectively to perform online switching of production size parameters.

2. The method according to claim 1, wherein The calculating the first parameter values and the second parameter values based on the comparison result to obtain adjustment values in multiple size dimensions includes: Determine the second parameter values of the second size in multiple size dimensions based on the production process and production quality; Calculate the first parameter values and the second parameter values respectively according to the multiple size dimensions to obtain corresponding adjustment values.

3. The method according to claim 2, wherein The size dimensions at least include a heating dimension; The calculating the first parameter values and the second parameter values respectively according to the multiple size dimensions to obtain corresponding adjustment values includes: Determine multiple heating parameters of the single crystal furnace in the heating dimension, and call the parameter values corresponding to the multiple heating parameters in the first size and the second size; Calculate the parameter values corresponding to each heating parameter to obtain a calculation result, and fuse the calculation results to obtain a heating adjustment value.

4. The method according to claim 2, wherein The size dimensions at least include a crystal pulling dimension; The calculating the first parameter values and the second parameter values respectively according to the multiple size dimensions to obtain corresponding adjustment values includes: Determine multiple crystal pulling parameters of the single crystal furnace in the heating dimension based on the structure of the crystal pulling mechanism; Calculate the parameter values corresponding to each crystal pulling parameter to obtain a calculation result, and fuse the calculation results to obtain a crystal pulling adjustment value.

5. The method according to claim 4, wherein The size dimensions at least include a water cooling dimension; The calculating the first parameter values and the second parameter values respectively according to the multiple size dimensions to obtain corresponding adjustment values includes: Determine multiple water cooling parameters of the single crystal furnace in the heating dimension based on the structure of the water cooling mechanism; Calculate the parameter values corresponding to each water cooling parameter to obtain a calculation result, and fuse the calculation results to obtain a water cooling adjustment value.

6. The method according to any one of claims 3-5, characterized in that, The generating corresponding adjustment instructions based on the adjustment values in the multiple size dimensions includes: Extract the heating adjustment value, the crystal pulling adjustment value, and the water cooling adjustment value to obtain corresponding size dimensions, so as to generate an identifier based on the corresponding size dimensions; Generate the adjustment instruction based on the heating adjustment value, the crystal pulling adjustment value, the water cooling adjustment value, and the corresponding identifier.

7. The method according to claim 1, wherein The controlling the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respectively respond to the adjustment instruction to perform online switching of production dimension parameters includes: Controlling the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respectively identify the adjustment instruction to obtain the corresponding adjustment value; Reading and invoking the adjustment method for the target mechanism in the adjustment instruction to perform parameter adjustment on the target mechanism based on the adjustment value.

8. An on-line switching device for producing single crystal silicon rods of different sizes, characterized in that, Applied to a single crystal furnace, the single crystal furnace includes a heating mechanism, a water cooling mechanism, and a crystal pulling mechanism, and the device includes: An acquisition module, configured to acquire various dimension parameters and corresponding first parameter values when the single crystal furnace produces a single crystal rod of a first dimension in a first time period; the first time period is adjacent to a second time period; A comparison module, configured to determine various dimension parameters and corresponding second parameter values when the single crystal furnace produces a single crystal rod of a second dimension in a future second time period, and compare the first parameter value with the second parameter value to obtain a comparison result; A calculation module, configured to calculate the first parameter value and the second parameter value based on the comparison result to obtain adjustment values in multiple dimension dimensions, and generate corresponding adjustment instructions based on the adjustment values in the multiple dimension dimensions; A switching module, configured to respectively send the adjustment instruction to the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism, so as to control the heating mechanism, the water cooling mechanism, and the crystal pulling mechanism to respectively respond to the adjustment instruction to perform online switching of production dimension parameters.

9. An electronic device, characterized in that, Including: A processor, a memory, and a bus, the memory stores machine-readable instructions executable by the processor. When the electronic device runs, the processor communicates with the memory through the bus. When the machine-readable instructions are executed by the processor, the steps of a method for online switching of producing single crystal rods of different dimensions according to any one of claims 1 to 7 are executed.

10. A computer-readable storage medium, characterized in that, A computer program is stored on the computer-readable storage medium. When the computer program is run by a processor, the steps of a method for online switching of producing single crystal rods of different dimensions according to any one of claims 1 to 7 are executed.

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