Vacuum chamber resistance determination method, vacuum chamber structure optimization method and computer equipment

Abstract

The invention provides a vacuum chamber resistance determination method, a vacuum chamber structure optimization method and computer equipment, and the method comprises the steps: obtaining a first coil parameter when a first excitation is applied to a coil in a vacuum chamber-free state; in the presence state of the vacuum chamber, acquiring a second coil parameter and a vacuum chamber eddy current when second excitation is applied to the coil; and calculating the resistance of the vacuum chamber by using the first coil parameter, the second coil parameter and the eddy current of the vacuum chamber based on a pre-constructed mutual inductance circuit equivalent model of the coil and the vacuum chamber. A vacuum chamber does not need to be equivalent to an annular current wire, a designed real three-dimensional vacuum chamber structure model is used, the vacuum chamber resistance is determined by obtaining the relation between the vacuum chamber resistance and a computable known quantity through a mutual inductance circuit equivalent model of a coil and the vacuum chamber, and the vacuum chamber structure does not need to be simplified. The three-dimensional current path possibly existing in the real three-dimensional vacuum chamber structure model is prevented from being ignored, and the more real vacuum chamber resistance can be obtained.

Description

Technical Field

[0001] This application relates to the field of controllable nuclear fusion technology, and particularly to a method for determining the resistance of a vacuum chamber, a method for optimizing the structure of a vacuum chamber, and a computer device. Background Art

[0002] Fusion energy, as a reliable clean energy source, has great application potential. Tokamak is an important device for realizing controllable nuclear fusion, and currently, there are various Tokamak devices with different sizes and characteristics operating globally. During the operation of a Tokamak device, the change in the current in the magnet coils induces eddy currents on the vacuum chamber wall, and these eddy currents will have a certain impact on the behavior of the plasma inside the device, especially may change the shape and stability of the plasma. Therefore, to ensure the efficient operation of the Tokamak device, it is crucial to reduce the influence of eddy currents, and smaller eddy currents will be beneficial to the stable operation of the device.

[0003] Increasing the toroidal resistance of the vacuum chamber can effectively reduce eddy currents. However, the increase in toroidal resistance often leads to a reduction in the thickness of the vacuum chamber wall, which poses a great challenge to the structural design. Therefore, accurately calculating the toroidal resistance of the vacuum chamber becomes a key step in balancing the magnitude of eddy currents during the operation of the device and the thickness of the vacuum chamber wall. At present, most of the methods for measuring the toroidal resistance of the vacuum chamber adopt the mutual inductance model equivalent to current filaments. This model decomposes the vacuum chamber into multiple two-dimensional toroidal current filaments, and obtains the parameters of each toroidal current filament by numerically solving differential equations, and then synthesizes to obtain the equivalent eddy currents and toroidal resistance of the vacuum chamber. This equivalent method simplifies the complex structure of the vacuum chamber in the Tokamak device (such as windows, additional conductors, etc.), ignores the possible three-dimensional current paths in the real model, and the mutual inductance calculation process is complex, resulting in inaccurate calculation of the vacuum chamber resistance.

[0004] Therefore, how to more accurately calculate the resistance of the vacuum chamber in a controllable nuclear fusion device has become a technical problem to be solved urgently. Summary of the Invention

[0005] Embodiments of this application provide a method for determining the resistance of a vacuum chamber, a method for optimizing the structure of a vacuum chamber, and a computer device, which solve the existing technical problem of how to more accurately calculate the resistance of the vacuum chamber in a controllable nuclear fusion device.

[0006] To overcome the above technical problems, according to an embodiment of the present application, a method for determining the resistance of a vacuum chamber is provided, which is used to determine the equivalent resistance of the vacuum chamber in a controllable nuclear fusion device. The method for determining the resistance of the vacuum chamber includes: obtaining first coil parameters when a first excitation is applied to the coils in the controllable nuclear fusion device in the absence of the vacuum chamber; obtaining second coil parameters and vacuum chamber eddy currents when a second excitation is applied to the coils in the presence of the vacuum chamber; and calculating the resistance of the vacuum chamber by using the first coil parameters, the second coil parameters, and the vacuum chamber eddy currents based on a pre-constructed mutual inductance circuit equivalent model of the coils and the vacuum chamber.

[0007] In one embodiment, obtaining the second coil parameters and the vacuum chamber eddy currents when the second excitation is applied to the coils in the presence of the vacuum chamber includes: obtaining the vacuum chamber material properties and the vacuum chamber cross-sectional area; determining the vacuum chamber current density based on the second excitation and the vacuum chamber material properties when the second excitation is applied to the coils; determining the vacuum chamber eddy currents based on the vacuum chamber cross-sectional area and the vacuum chamber current density; and calculating the coil impedance under the mutual inductance between the coil and the vacuum chamber based on the vacuum chamber eddy currents and the second excitation.

[0008] In one embodiment, the second excitation has multiple frequencies. Obtaining the second coil parameters and the vacuum chamber eddy currents when the second excitation is applied to the coils includes: calculating the corresponding vacuum chamber current densities at different frequencies respectively in a discrete scanning manner to obtain a current density matrix; determining a vacuum chamber eddy current matrix based on the current density matrix and the vacuum chamber cross-sectional area; and calculating a coil impedance matrix under the mutual inductance between the coil and the vacuum chamber based on the vacuum chamber eddy current matrix and the second excitation.

[0009] In one embodiment, the method for constructing the mutual inductance circuit equivalent model of the coils and the vacuum chamber includes: establishing a functional relationship between the vacuum chamber impedance and the first coil parameters, the second coil parameters, and the vacuum chamber eddy currents with the mutual inductance coefficient between the coils and the vacuum chamber as an intermediate quantity as the mutual inductance circuit equivalent model.

[0010] In one embodiment, establishing the functional relationship between the impedance of the vacuum chamber and the first coil parameter and the second coil parameter with the mutual inductance coefficient between the coil and the vacuum chamber as an intermediate quantity as the mutual inductance circuit equivalent model includes: establishing a first equivalent circuit relationship of the coil based on the mutual inductance coefficient, the first coil parameter, the second coil parameter, and the vacuum chamber eddy current, and establishing a second equivalent circuit relationship of the vacuum chamber based on the mutual inductance coefficient, the vacuum chamber eddy current, and the vacuum chamber resistance; determining a first mapping relationship between the equivalent mutual inductance coefficient and the first coil parameter, the second coil parameter, and the vacuum chamber eddy current based on the first equivalent circuit relationship; establishing a second mapping relationship between the equivalent mutual inductance coefficient and the vacuum chamber eddy current and the vacuum chamber resistance based on the second equivalent circuit relationship; and establishing the functional relationship between the impedance of the vacuum chamber and the first coil parameter and the second coil parameter by using the first mapping relationship and the second mapping relationship.

[0011] In one embodiment, based on the pre-constructed mutual inductance circuit equivalent model of the coil and the vacuum chamber, calculating the vacuum chamber resistance by using the first coil parameter, the second coil parameter, and the vacuum chamber eddy current includes: substituting the first coil parameter, the second coil parameter, and the vacuum chamber eddy current as known quantities into the functional relationship to solve for the vacuum chamber resistance.

[0012] According to a second aspect, an embodiment of the present application provides a method for optimizing the structure of a vacuum chamber, including: obtaining the balance condition of the vacuum chamber eddy current and the vacuum chamber structure parameters; determining the vacuum chamber resistance function by using the vacuum chamber resistance determination method according to any one of the above first aspects; and optimizing the vacuum chamber structure parameters based on the balance condition and the vacuum chamber resistance function.

[0013] According to a third aspect, an embodiment of the present application provides a device for determining the vacuum chamber resistance, which is used to determine the equivalent resistance of the vacuum chamber in a controllable nuclear fusion device. The device for determining the vacuum chamber resistance includes: a first acquisition module, configured to acquire the first coil parameter when a first excitation is applied to the coil in the controllable nuclear fusion device in the absence of the vacuum chamber state; a second acquisition module, configured to acquire the second coil parameter and the vacuum chamber eddy current when a second excitation is applied to the coil in the presence of the vacuum chamber state; and a calculation module, configured to calculate the vacuum chamber resistance based on the pre-constructed mutual inductance circuit equivalent model of the coil and the vacuum chamber by using the first coil parameter, the second coil parameter, and the vacuum chamber eddy current.

[0014] According to a fourth aspect, an embodiment of the present application provides a computer device, including: a memory and a processor, which are communicatively connected to each other. The memory stores computer instructions, and the processor executes the computer instructions to execute the vacuum chamber resistance determination method according to any one of the above first aspects and / or the vacuum chamber structure optimization method according to the above second aspect.

[0015] According to a fifth aspect, an embodiment of the present application provides a computer-readable storage medium, on which computer instructions are stored. The computer instructions are used to cause a computer to execute the vacuum chamber resistance determination method according to any one of the above first aspects and / or the vacuum chamber structure optimization method according to the above second aspect.

[0016] The technical solutions provided by the embodiments of the present application may include the following beneficial effects:

[0017] In the present application, in a state without a vacuum chamber, a first coil parameter when a first excitation is applied to the coil is obtained; in a state where the vacuum chamber exists, a second coil parameter and a vacuum chamber eddy current when a second excitation is applied to the coil are obtained. Based on a pre-constructed mutual inductance circuit equivalent model of the coil and the vacuum chamber, the vacuum chamber resistance is calculated using the first coil parameter, the second coil parameter, and the vacuum chamber eddy current. Therefore, there is no need to equivalently represent the vacuum chamber as a circular current filament. Using a designed real three-dimensional vacuum chamber structure model, by utilizing the inherent parameters of the coil obtained by applying an excitation in a state without a vacuum chamber and the parameters of the coil and the vacuum chamber in a mutual inductance state obtained by applying an excitation in a state where the vacuum chamber exists and the coil are in a mutual inductance state, the relationship between the vacuum chamber resistance and the computable known quantities is obtained through the mutual inductance circuit equivalent model of the coil and the vacuum chamber to determine the vacuum chamber resistance. There is no need to simplify the vacuum chamber structure, avoiding ignoring the possible three-dimensional current paths in the real three-dimensional vacuum chamber structure model, and a more realistic vacuum chamber resistance can be obtained.

[0018] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present application. Description of the Drawings

[0019] The drawings here are incorporated into the specification and constitute a part of this specification, showing embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application.

[0020] Figure 1 is a schematic flowchart of a method for determining the resistance of a vacuum chamber shown according to an exemplary embodiment;

[0021] Figure 2 is a schematic diagram of an equivalent mutual inductance circuit of a coil and a vacuum chamber shown according to an exemplary embodiment;

[0022] Figure 3 It is a schematic diagram of a vacuum chamber resistance determination device shown according to an exemplary embodiment;

[0023] Figure 4 It is a schematic diagram of a computer device shown according to an exemplary embodiment. Detailed implementation manners

[0024] Among them, the drawings are only for illustrative purposes, showing only schematic diagrams, not physical diagrams, and should not be construed as limitations on this patent; in order to better illustrate the embodiments of the present application, some components in the drawings will be omitted, enlarged or reduced, which do not represent the dimensions of the actual product; for those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.

[0025] In the drawings of the embodiments of the present application, the same or similar reference numerals correspond to the same or similar components; in the description of the present application, it should be understood that if terms such as "upper", "lower", "left", "right", "inner", "outer", etc. are used to indicate the orientation or positional relationship, it is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the positional relationship in the drawings are only for illustrative purposes and should not be construed as limitations on this patent. For those of ordinary skill in the art, the specific meanings of the above terms can be understood according to specific circumstances.

[0026] In the description of the present application, unless otherwise clearly specified and limited, if terms such as "connection" are used to indicate the connection relationship between components, this term should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0027] The present application provides a method for determining the resistance of a vacuum chamber, which is used to determine the resistance of the vacuum chamber in a controllable nuclear fusion device, and specifically used to determine the resistance function of the vacuum chamber of the three-dimensional real design structure model of the vacuum chamber. This method can execute the corresponding computer instructions of this method in an execution subject such as a computer device, or can also use the software installed in the computer device to execute the above method. Exemplarily, the above method can be executed through corresponding electromagnetic analysis software, and can also be jointly executed by combining the computer instructions in the computer device and the installed software, such as Figure 1 As shown, the method for determining the resistance of the vacuum chamber includes:

[0028] S10. Obtain the first coil parameters when a first excitation is applied to the coil in a state without a vacuum chamber. In this embodiment, the coil can adopt a pre-designed coil model. The coil model can include coil models such as the Central Solenoid (CS) coil and the Correction Coil (CC) coil in a controlled nuclear fusion device. Similarly, the coil model can also be loaded into the corresponding electromagnetic analysis software, and all coils can be equivalent to one coil. Apply the first excitation to the coil. When applying the first excitation, calculate the first coil parameters in the state without a vacuum chamber through the analysis software. Among them, the first excitation can be a fixed excitation current or an excitation voltage. The first coil parameters can be inherent coil parameters such as coil resistance and coil inductance.

[0029] S20. Obtain the second coil parameters and the vacuum chamber eddy current when a second excitation is applied to the coil in a state where the vacuum chamber exists. The vacuum chamber can adopt a designed three-dimensional vacuum chamber structure model. After obtaining the first coil parameters, load the three-dimensional vacuum chamber structure model into the corresponding electromagnetic analysis software. In this state, apply the second excitation to the coil. When applying the second excitation, mutual inductance is generated between the coil and the vacuum chamber, and the vacuum chamber generates induced eddy current, and the coil impedance changes due to the induction of the vacuum chamber. The second coil parameters can be the coil impedance. Calculating the second coil parameters and the vacuum chamber eddy current when applying the second excitation in the state where the vacuum chamber exists can simulate the mutual inductance relationship between the coil and the entire vacuum chamber under the actual excitation of the coil. The second coil parameters can be the coil parameters in the mutual inductance state between the coil and the vacuum chamber. For example, parameters such as the coil resistance, coil inductance, and coil impedance in the mutual inductance state.

[0030] S30. Calculate the vacuum chamber resistance based on the pre-constructed mutual inductance circuit equivalent model of the coil and the vacuum chamber, using the first coil parameters, the second coil parameters, and the vacuum chamber eddy current.

[0031] In this embodiment, the pre-constructed mutual inductance circuit equivalent model of the coil and the vacuum chamber can describe the mapping relationship among the first coil parameter, the second coil parameter, the vacuum chamber eddy current, and the vacuum chamber resistance when the coil and the vacuum chamber are in the mutual inductance state. Among them, the coil is equivalent to an equivalent circuit in series with a coil resistance, a coil inductance, and an excitation source, and the vacuum chamber can be equivalent to an equivalent circuit in series with a vacuum chamber resistance and a vacuum chamber inductance. When the coil is in the excitation state, there is an excitation current in the coil equivalent circuit, there is a vacuum chamber eddy current in the vacuum chamber equivalent circuit, the coil and the vacuum chamber have mutual inductance, and the coil and the vacuum chamber have the same mutual inductance coefficient. Therefore, using the mutual inductance coefficient as an intermediate quantity, a functional relationship among the coil resistance, the coil inductance, the coil impedance, the vacuum chamber eddy current, the vacuum chamber inductance, and the vacuum chamber resistance can be established, and then the mutual inductance circuit equivalent model of the coil and the vacuum chamber can be obtained. Taking the calculated first coil parameter, second coil parameter, and vacuum chamber eddy current as known quantities and the vacuum chamber resistance as an unknown quantity, the mapping relationship between the vacuum chamber resistance and the known quantities can be calculated, and then the vacuum chamber resistance can be obtained after determining the coil parameter and the excitation source parameter.

[0032] In this application, it is not necessary to equivalent the vacuum chamber to a circular current filament. By using the designed real three-dimensional vacuum chamber structure model, based on the coil inherent parameters obtained by applying excitation in the state without the vacuum chamber and the parameters of the coil and the vacuum chamber in the mutual inductance state obtained by applying excitation when the vacuum chamber and the coil are in the mutual inductance state, the relationship between the vacuum chamber resistance and the calculable known quantities is obtained through the mutual inductance circuit equivalent model of the coil and the vacuum chamber to determine the vacuum chamber resistance. There is no need to simplify the vacuum chamber structure, avoiding ignoring the possible three-dimensional current paths in the real three-dimensional vacuum chamber structure model, and a more realistic vacuum chamber resistance can be obtained.

[0033] In one embodiment, when a second excitation is applied to the coil in the presence of the vacuum chamber, mutual inductance is generated between the vacuum chamber and the coil, and eddy current can be induced in the vacuum chamber. The eddy current density of the eddy current can be calculated based on Maxwell's equations using the material properties of the vacuum chamber and the magnetic field generated by the coil. After obtaining the eddy current density, integrating the eddy current density over the cross-sectional area of the vacuum chamber, the vacuum chamber circumferential eddy current Ivv = ∫JzdS can be obtained, where S is the circumferential cross-sectional area of the vacuum chamber and Jz is the circumferential current density of the vacuum chamber.

[0034] In the presence of the vacuum chamber, the eddy current induced in the vacuum chamber will form a mutual inductance with the coil. Therefore, the impedance of the coil in the presence of the vacuum chamber is different from its own impedance (the impedance determined based on the resistance and inductance of the coil itself). In the case of mutual inductance between the coil and the vacuum chamber, the impedance of the coil in the mutual inductance state between the coil and the vacuum chamber is determined by considering the second excitation of the coil and the eddy current in the vacuum chamber. Exemplarily, after obtaining the eddy current in the vacuum chamber, the impedance of the coil in the mutual inductance state between the vacuum chamber and the coil can be calculated by Maxwell's equations. Among them, the impedance of the coil in the mutual inductance state between the coil and the vacuum chamber: Zc = V / Ic, where V is the loop voltage of the coil, including the voltage corresponding to the coil resistance, the self-inductance voltage corresponding to the coil self-inductance, and the mutual inductance voltage of the vacuum chamber on the coil. Specifically, V = IcRc + ULc + ULvv, where Ic is the excitation power supply of the coil, Rc is the coil resistance, ULc is the coil self-inductance voltage, ULvv is the mutual inductance voltage of the vacuum chamber on the coil, and ULvv can be determined by the induced eddy current in the vacuum chamber and the mutual inductance coefficient of the vacuum chamber.

[0035] In the state without the vacuum chamber, fixed parameters of the coil are obtained, such as the first coil parameters such as the coil resistance and coil inductance, etc.; in the state with the vacuum chamber, the coil impedance and the eddy current induced in the vacuum chamber are obtained. Through the mutual inductance relationship between the coil and the vacuum chamber, the impedance of the vacuum chamber can be obtained, and then by taking the real part of the impedance of the vacuum chamber, the resistance of the vacuum chamber can be obtained.

[0036] In one embodiment, when the coil is in the excited state, there is an excitation current in the equivalent circuit of the coil, there is an eddy current in the equivalent circuit of the vacuum chamber, the coil and the vacuum chamber have mutual inductance, and the coil and the vacuum chamber have the same mutual inductance coefficient. Therefore, a functional relationship between the impedance of the vacuum chamber, the first coil parameters, the second coil parameters, and the eddy current in the vacuum chamber is established with the mutual inductance coefficient between the coil and the vacuum chamber as an intermediate quantity as the equivalent model.

[0037] See Figure 2 As shown, the coil is equivalent to a coil equivalent circuit in which a coil resistance, a coil inductance, and an excitation source are connected in series. The vacuum chamber can be equivalent to a vacuum chamber equivalent circuit in which a vacuum chamber resistance and a vacuum chamber inductance are connected in series. There is mutual inductance between the coil equivalent circuit and the vacuum chamber equivalent circuit, and they have the same mutual inductance coefficient.

[0038] On the equivalent circuit of the coil, a first equivalent circuit relationship of the coil is established based on the mutual inductance coefficient, the first coil parameters, the second coil parameters, and the eddy current in the vacuum chamber. Specifically, the first equivalent circuit relationship can be expressed by the following formula:

[0039]

[0040] Wherein, Ic is the coil excitation current; Rc is the coil resistance, Lc is the coil inductance. Both the coil resistance Rc and the coil inductance Lc are fixed parameters of the coil and can be obtained by Maxwell calculation in this embodiment. Zc is the coil impedance when there is a vacuum chamber; Ivv is the vacuum chamber eddy current, which can be obtained by a pre-established vacuum chamber induced eddy current calculation method or by Maxwell calculation; M is the mutual inductance coefficient between the coil and the vacuum chamber, and Uc is the coil loop voltage; is the mutual inductance voltage of the vacuum chamber on the coil.

[0041] On the equivalent circuit of the vacuum chamber, establish the second equivalent circuit relationship of the vacuum chamber based on the mutual inductance coefficient, the vacuum chamber eddy current, and the vacuum chamber resistance; specifically, the second equivalent circuit relationship can be expressed by the following formula:

[0042]

[0043] Ivv is the vacuum chamber eddy current, Rvv is the vacuum chamber resistance, Lvv is the vacuum chamber inductance, and M is the mutual inductance coefficient between the coil and the vacuum chamber, is the mutual inductance voltage of the coil on the vacuum chamber.

[0044] Based on the first equivalent circuit relationship, determine the first mapping relationship between the equivalent mutual inductance coefficient and the first coil parameter, the second coil parameter, and the vacuum chamber eddy current. Specifically,

[0045] Since Ic = I c0 cos(ωt) = I c0 e jωt , an eddy current with the same frequency is induced in the vacuum chamber equivalent circuit for the eigenmode ω = 2πf.

[0046] Then Equation (1) can be expressed as:

[0047] IcRc + jωLcIc + jωMIvv = Uc = ZcIc (3)

[0048] Use Equation (3) to solve for the mutual inductance coefficient M, and obtain the following first mapping relationship:

[0049]

[0050] Based on the second equivalent circuit relationship, establish the second mapping relationship between the equivalent mutual inductance coefficient and the vacuum chamber eddy current and the vacuum chamber resistance;

[0051] Equation (2) can be expressed as:

[0052] IvvRvv + jωLvvIvv + jωMIc = 0 (5)

[0053] Since \(Z_{vv}=R_{vv}+j\omega L_{vv}\), the following second mapping relationship can be obtained from Equation (5):

[0054]

[0055] A functional relationship between the impedance of the vacuum chamber and the parameters of the first coil and the second coil is established by using the first mapping relationship and the second mapping relationship. Substituting the first mapping relationship of the mutual inductance coefficient \(M\) into the second mapping relationship, we can get:

[0056]

[0057] Substitute the parameters of the first coil, the parameters of the second coil, and the eddy current in the vacuum chamber into the above Equation (7), and solve for the impedance of the vacuum chamber. The vacuum chamber resistance \(R_{vv}\) is the real part of the vacuum chamber impedance \(Z_{vv}\), and the vacuum chamber inductance \(L_{vv}\) is the imaginary part of the vacuum chamber impedance \(Z_{vv}\). After calculating the vacuum chamber impedance matrix and taking its real part, the vacuum chamber resistance \(R_{vv}\) can be obtained.

[0058] In this embodiment, the second excitation can include multiple frequencies. When different frequencies of the second excitation are applied, the corresponding \(\omega\) is different. Therefore, the impedance of the corresponding vacuum chamber is different. In this embodiment, multiple frequencies of the second excitation can be applied to the coil to obtain the vacuum chamber resistance corresponding to all excitations that can cover the operating frequency band of the coil. Exemplarily, the frequency of the second excitation can be selected from 0.1 Hz to 100 kHz to cover the low-frequency to high-frequency band. According to the above method, the eddy current in the vacuum chamber and the coil impedance at different frequency points are calculated in a discrete scanning manner to obtain the eddy current matrix in the vacuum and the coil impedance matrix; then, based on the functional relationship corresponding to the mutual inductance circuit equivalent model of the coil and the vacuum chamber constructed in the above embodiment, where the functional relationship can refer to Equation (7) described in the above embodiment, and \(R_c\) and \(L_c\) are fixed parameters of the coil, and \(R_c\) and \(L_c\) remain unchanged under excitations of different frequencies. Then, the vacuum chamber resistance matrix corresponding to different frequencies can be obtained. The present application also provides a method for determining the structure of a vacuum chamber, which includes:

[0059] Obtain the balance condition of the eddy current in the vacuum chamber and the structure parameters of the vacuum chamber. In this embodiment, the balance condition can be to achieve the minimum eddy current in the vacuum chamber on the basis of ensuring strength verification. Using this balance condition as a constraint condition, the vacuum chamber resistance determination method in the above embodiment is used to determine the vacuum chamber resistance as the threshold (or expected value) of the equivalent resistance of the vacuum chamber, so as to provide a simulation basis for the optimization of the vacuum chamber model (such as wall thickness, stiffeners, etc.), so that it can not only achieve the toroidal resistance required for plasma operation but also meet the strength requirements of the vacuum chamber.

[0060] This embodiment provides a device for determining the resistance of a vacuum chamber in a controllable nuclear fusion device, as Figure 3 shown, including:

[0061] A first acquisition module 301, configured to acquire first coil parameters when a first excitation is applied to the coils in the controllable nuclear fusion device in a state without a vacuum chamber;

[0062] A second acquisition module 302, configured to acquire second coil parameters and vacuum chamber eddy currents when a second excitation is applied to the coils in a state where the vacuum chamber exists;

[0063] A calculation module 303, configured to calculate the vacuum chamber resistance based on a pre - constructed mutual inductance circuit equivalent model of the coils and the vacuum chamber, using the first coil parameters, the second coil parameters, and the vacuum chamber eddy currents. It should be noted here that the examples and application scenarios implemented by the above - mentioned modules and corresponding steps are the same, but are not limited to the content disclosed in the above - mentioned embodiments.

[0064] It should be noted that the above - mentioned modules, as part of the device, can be implemented by software or by hardware. Among them, the hardware environment includes a network environment.

[0065] An embodiment of the present application further provides a computer device, including a processor, a communication interface, a memory, and a communication bus. Among them, the processor, the communication interface, and the memory complete mutual communication through the communication bus. The memory is used to store a computer program; the processor is used to execute the method in any of the above - mentioned embodiments by running the computer program stored on the memory.

[0066] Figure 4 is a structural block diagram of an optional computer device according to an embodiment of the present application, as Figure 4 shown, including a processor 10, a communication interface 20, a memory 30, and a communication bus 40. Among them, the processor 10, the communication interface 20, and the memory 30 complete mutual communication through the communication bus 40. Among them,

[0067] The memory 30 is used to store a computer program;

[0068] The processor 10 is configured to implement the method in any of the above - mentioned embodiments when executing the computer program stored on the memory 30.

[0069] Optionally, in this embodiment, the above - mentioned communication bus may be a PCI (Peripheral Component Interconnect) bus, or an EISA (Extended Industry Standard Architecture) bus, etc. This communication bus can be divided into an address bus, a data bus, a control bus, etc. For the sake of easy representation, Figure 4It is represented only by a thick line, but it does not mean that there is only one bus or one type of bus.

[0070] The communication interface is used for communication between the above computer device and other devices.

[0071] The memory may include RAM, or may also include non-volatile memory, for example, at least one disk memory. Optionally, the memory may also be at least one storage device located far from the aforementioned processor.

[0072] The aforementioned processor may be a general-purpose processor, which may include but is not limited to: CPU (Central Processing Unit, central processing unit), NP (Network Processor, network processor), etc.; it may also be a DSP (Digital Signal Processing, digital signal processor), ASIC (Application Specific Integrated Circuit, application-specific integrated circuit), FPGA (Field-Programmable Gate Array, field-programmable gate array) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0073] Optionally, the specific examples in this embodiment may refer to the examples described in the above embodiments, and will not be elaborated here.

[0074] Those of ordinary skill in the art can understand that Figure 4 The structure shown is only schematic. The device for implementing the method of any one of the above embodiments may be a terminal device, and the terminal device may be a smart phone (such as an Android phone, an IOS phone, etc.), a tablet computer, a palm computer, and a mobile Internet device (Mobile Internet Devices, MID), a PAD and other terminal devices. Figure 4 It does not limit the structure of the above electronic device. For example, the terminal device may further include more or fewer components (such as a network interface, a display device, etc.) than those shown in Figure 4 or have a different configuration from that shown in Figure 4 shown.

[0075] Those of ordinary skill in the art can understand that all or part of the steps in the various methods of the above embodiments can be completed by instructing the relevant hardware of the terminal device through a program, and the program can be stored in a computer-readable storage medium. The storage medium may include: a flash drive, a ROM, a RAM, a magnetic disk or an optical disc, etc.

[0076] As an exemplary embodiment, the present application also provides a computer-readable storage medium storing a computer program, wherein the computer program is configured to execute the method steps of any one of the embodiments when running.

[0077] Optionally, in the present embodiment, the above storage medium may be used for the program code for executing the method steps of the embodiments of the present application.

[0078] Optionally, in the present embodiment, the above storage medium may be located on at least one of multiple network devices in the network shown in the above embodiment.

[0079] Optionally, in the present embodiment, the storage medium is configured to store for executing the method in the above embodiment.

[0080] Optionally, specific examples in the present embodiment may refer to the examples described in the above embodiment, and details are not described herein again.

[0081] Optionally, in the present embodiment, the above storage medium may include but is not limited to: various media such as USB flash drives, ROMs, RAMs, mobile hard disks, magnetic disks or optical discs that can store program code.

[0082] The serial numbers of the embodiments of the present application above are only for description and do not represent the advantages or disadvantages of the embodiments.

[0083] If the integrated unit in the above embodiment is implemented in the form of a software functional unit and sold or used as an independent product, it may be stored in the above computer-readable storage medium. Based on such an understanding, the technical solution of the present application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, may be embodied in the form of a software product. The computer software product is stored in the storage medium and includes several instructions for causing one or more computer devices (which may be personal computers, servers or network devices, etc.) to execute all or part of the steps of the method in the above embodiment.

[0084] In several embodiments provided by the present application, it should be understood that the disclosed client can be implemented in other ways. Among them, the device embodiments described above are only illustrative. For example, the division of units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed mutual coupling or direct coupling or communication connection may be through some interfaces, and the indirect coupling or communication connection of units or modules may be in an electrical or other form.

[0085] The unit described as a separation component may or may not be physically separated. The component shown as a unit may or may not be a physical unit, that is, it may be located in one place or distributed across multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution provided in this embodiment.

[0086] In addition, in each embodiment of this application, each functional unit can be integrated in a processing unit, or each unit can exist physically alone, or two or more units can be integrated in one unit. The above integrated unit can be implemented in the form of hardware or in the form of a software functional unit.

[0087] In the above embodiments of this application, the descriptions of each embodiment have their own emphases. For the parts not detailed in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0088] The above is only the preferred embodiment of this application. It should be noted that for those of ordinary skill in the art of this technology, without departing from the principle of this application, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of this application.

Claims

1. A method for determining the resistance of a vacuum chamber, characterized in that, For determining the equivalent resistance of a vacuum chamber in a controllable nuclear fusion device, the method for determining the vacuum chamber resistance includes: In the state without the vacuum chamber, obtaining first coil parameters when a first excitation is applied to a coil in the controllable nuclear fusion device; In the state where the vacuum chamber exists, obtaining second coil parameters and vacuum chamber eddy currents when a second excitation is applied to the coil; Based on a pre-constructed mutual inductance circuit equivalent model of the coil and the vacuum chamber, calculating the vacuum chamber resistance by using the first coil parameters, the second coil parameters, and the vacuum chamber eddy currents.

2. The method for determining the resistance of the vacuum chamber according to claim 1, characterized in that, In the state where the vacuum chamber exists, obtaining second coil parameters and vacuum chamber eddy currents when a second excitation is applied to the coil includes: Obtaining the material properties of the vacuum chamber and the cross-sectional area of the vacuum chamber; When applying the second excitation to the coil, determining the vacuum chamber current density based on the second excitation and the material properties of the vacuum chamber; Determining the vacuum chamber eddy currents based on the cross-sectional area of the vacuum chamber and the vacuum chamber current density; Calculating the coil impedance under the mutual inductance between the coil and the vacuum chamber based on the vacuum chamber eddy currents and the second excitation.

3. The method for determining the resistance of the vacuum chamber according to claim 2, characterized in that, The second excitation has multiple frequencies. Obtaining second coil parameters and vacuum chamber eddy currents when a second excitation is applied to the coil includes: Calculating the corresponding vacuum chamber current densities at different frequencies respectively in a discrete scanning manner to obtain a current density matrix; Determining a vacuum chamber eddy current matrix based on the current density matrix and the cross-sectional area of the vacuum chamber; Calculating a coil impedance matrix under the mutual inductance between the coil and the vacuum chamber based on the vacuum chamber eddy current matrix and the second excitation.

4. The method for determining the resistance of a vacuum chamber according to any one of claims 1 to 3, characterized in that, The method for constructing the mutual inductance circuit equivalent model of the coil and the vacuum chamber includes: Taking the mutual inductance coefficient between the coil and the vacuum chamber as an intermediate quantity to establish a functional relationship between the vacuum chamber impedance, the first coil parameters, the second coil parameters, and the vacuum chamber eddy currents as the mutual inductance circuit equivalent model.

5. The method for determining the resistance of the vacuum chamber according to claim 4, wherein, Taking the mutual inductance coefficient between the coil and the vacuum chamber as an intermediate quantity to establish a functional relationship between the vacuum chamber impedance, the first coil parameters, and the second coil parameters as the mutual inductance circuit equivalent model includes: Based on the mutual inductance coefficient, the first coil parameters, the second coil parameters, and the vacuum chamber eddy currents, establishing a first equivalent circuit relationship of the coil, and based on the mutual inductance coefficient, the vacuum chamber eddy currents, and the vacuum chamber resistance, establishing a second equivalent circuit relationship of the vacuum chamber; Determining a first mapping relationship between the equivalent mutual inductance coefficient, the first coil parameters, the second coil parameters, and the vacuum chamber eddy currents based on the first equivalent circuit relationship; Establishing a second mapping relationship between the equivalent mutual inductance coefficient, the vacuum chamber eddy currents, and the vacuum chamber resistance based on the second equivalent circuit relationship; Using the first mapping relationship and the second mapping relationship to establish a functional relationship between the vacuum chamber impedance, the first coil parameters, and the second coil parameters.

6. The method for determining the resistance of the vacuum chamber according to claim 4, characterized in that, Based on the pre-constructed mutual inductance circuit equivalent model of the coil and the vacuum chamber, calculating the vacuum chamber resistance by using the first coil parameters, the second coil parameters, and the vacuum chamber eddy currents includes: Substitute the first coil parameter, the second coil parameter, and the vacuum chamber eddy current as known quantities into the functional relationship to solve for the vacuum chamber resistance.

7. An optimization method for a vacuum chamber structure, characterized in that, Comprising: Obtain the balance condition of the vacuum chamber eddy current and the vacuum chamber structure parameters; Determine the vacuum chamber resistance function by using the vacuum chamber resistance determination method according to any one of claims 1-6; Optimize the vacuum chamber structure parameters based on the balance condition and the vacuum chamber resistance function.

8. A vacuum chamber resistance determination device, characterized in that, For determining the equivalent resistance of the vacuum chamber in a controllable nuclear fusion device, the vacuum chamber resistance determination device comprises: A first acquisition module, configured to acquire the first coil parameter when a first excitation is applied to the coil in the controllable nuclear fusion device without the vacuum chamber state; A second acquisition module, configured to acquire the second coil parameter and the vacuum chamber eddy current when a second excitation is applied to the coil in the presence of the vacuum chamber; A calculation module, configured to calculate the vacuum chamber resistance based on the mutual inductance circuit equivalent model of the coil and the vacuum chamber constructed in advance, by using the first coil parameter, the second coil parameter, and the vacuum chamber eddy current.

9. A computer device, characterized in that, Comprising: A memory and a processor, which are communicatively connected to each other. The memory stores computer instructions, and the processor executes the computer instructions to execute the vacuum chamber resistance determination method according to any one of claims 1 to 6 and / or the vacuum chamber structure optimization method according to claim 7.

10. A computer-readable storage medium, characterized in that, Computer instructions are stored on the computer-readable storage medium, and the computer instructions are used to cause a computer to execute the vacuum chamber resistance determination method according to any one of claims 1 to 6 and / or the vacuum chamber structure optimization method according to claim 7.

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