Surface-emitting lasers, optical emitting components and optical modules

Abstract

This application relates to a surface-emitting laser, an optical emitting component, and an optical module. The surface-emitting laser includes: a substrate; a bottom reflector structure, an active layer, and a top reflector structure disposed on the substrate; wherein, the top reflector structure has a plurality of oxide confinement layers, and the thickness of some of the oxide confinement layers is different from the thickness of the remaining oxide confinement layers. Applying the solution of this application can reduce series resistance and parasitic capacitance, thereby improving product performance.

Description

Technical Field

[0001] This application relates to the field of semiconductor laser technology, and in particular to a surface-emitting laser, an optical emitting component, and an optical module. Background Technology

[0002] The modulation bandwidth of surface-emitting lasers, such as vertical-cavity surface-emitting lasers (VCSELs), is related not only to intrinsic factors such as relaxation oscillation frequency and damping, but also to the extrinsic electrical parasitic cutoff frequency. When the laser's relaxation oscillation frequency is high, its dynamic characteristics are mainly limited by the electrical parasitic cutoff frequency. Therefore, device design should minimize electrical parasitic effects and increase the electrical parasitic cutoff frequency as much as possible. The electrical parasitic cutoff frequency is mainly determined by factors such as the series resistance caused by hole transport in the upper DBR, the parasitic capacitance introduced by the oxide layer, and the large pad capacitance.

[0003] Therefore, improving the dynamic characteristics of VCSEL is a pressing problem that needs to be solved. Summary of the Invention

[0004] Therefore, it is necessary to provide a surface-emitting laser, an optical emitting component, and an optical module to address the aforementioned technical problems.

[0005] In a first aspect, this application provides a surface-emitting laser, comprising:

[0006] Substrate;

[0007] A bottom mirror structure, an active layer, and a top mirror structure disposed on the substrate;

[0008] The top reflector structure has several oxide confinement layers, and the thickness of some of the oxide confinement layers is different from the thickness of the rest of the oxide confinement layers.

[0009] It is understood that the surface-emitting laser provided in this application reduces the overall parasitic capacitance by forming several oxide confinement layers in the top reflector structure, and making the thickness of some of the oxide confinement layers different from the thickness of the rest of the oxide confinement layers, thereby reducing the overall parasitic capacitance in the form of multiple oxide confinement layer capacitors connected in series.

[0010] In one possible embodiment, each of the oxidation restriction layers is divided into multiple groups along the direction away from the active layer, and the oxidation depth of the oxidation restriction layer in each group is substantially the same, while the oxidation depth of the oxidation restriction layer in different groups is different.

[0011] In one possible embodiment, the oxidation depth of the oxidation restriction layers in different groups gradually decreases along the direction away from the active layer.

[0012] In one possible embodiment, the group of oxide confinement layers closest to the active layer is used to define the emission aperture of the surface-emitting laser; and the thickness of the oxide confinement layers farthest from and closest to the active layer in this group of oxide confinement layers is different from the thickness of the remaining oxide confinement layers in the group.

[0013] In one possible embodiment, among the group of oxidation confinement layers closest to the active layer, the thickness of the oxidation confinement layer furthest from and closest to the active layer is less than the thickness of the remaining oxidation confinement layers in that group.

[0014] In one possible embodiment, among the group of oxide confinement layers closest to the active layer, the thicker oxide confinement layer is used to define the emission aperture of the surface-emitting laser.

[0015] In one possible embodiment, among the group of oxide confinement layers closest to the active layer, the oxide confinement layers farthest from and closest to the active layer have equal thicknesses of 5-15 nm; the remaining oxide confinement layers in this group have equal thicknesses of 20-35 nm.

[0016] In one possible embodiment, the oxidation confinement layers in the group closest to the active layer are arranged in a thin / thick / thin / thick manner.

[0017] In one possible embodiment, the top reflector structure includes multiple pairs of Al x GaAs / Al 1-x GaAs periodic stacked structure, where 0.12 ≤ x < 1.

[0018] In one possible embodiment, the aluminum composition in the AlGaAs material forming the oxide confinement layer is graded and the AlGaAs material is subjected to modulated doping.

[0019] In a second aspect, this application also provides a light emitting component, including a surface-emitting laser as described in any of the first aspects.

[0020] Thirdly, this application also provides an optical module, including an optical emitting module and an optical receiving module, wherein the optical emitting module is the optical emitting component described in the second aspect.

[0021] The aforementioned surface-emitting laser, optical emitting component, and optical module include a substrate; a bottom reflector structure, an active layer, and a top reflector structure disposed on the substrate; wherein, the top reflector structure has a plurality of oxide confinement layers, and the thickness of some of the oxide confinement layers is different from the thickness of the remaining oxide confinement layers. The surface-emitting laser of this application can reduce the overall parasitic capacitance by forming a plurality of oxide confinement layers in the top reflector structure, and making the thickness of some of the oxide confinement layers different from the thickness of the remaining oxide confinement layers, thereby achieving a series connection of multiple oxide confinement layer capacitors. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of a surface-emitting laser in one embodiment of this application;

[0023] Figure 2 for Figure 1 A schematic diagram of a first implementation of a set of oxide confinement layers in a surface-emitting laser is shown.

[0024] Figure 3 for Figure 1 A schematic diagram of a second implementation of a set of oxide confinement layers in a surface-emitting laser is shown.

[0025] Figure 4 for Figure 1 A schematic diagram of a third implementation of a set of oxide confinement layers in a surface-emitting laser is shown.

[0026] Figure 5 for Figure 1 The diagram shows a fourth implementation of a set of oxide confinement layers in a surface-emitting laser.

[0027] The objectives, features, and advantages of this invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0029] It is understood that the terms "first," "second," etc., used in this application may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of this application, a first client may be referred to as a second client, and similarly, a second client may be referred to as a first client.

[0030] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. "Multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. "Several" means at least one, such as one, two, etc., unless otherwise explicitly specified.

[0031] Based on this, this application creatively proposes a surface-emitting laser to solve the aforementioned technical problems.

[0032] Firstly, such as Figure 1 As shown, this application provides a surface-emitting laser, including a substrate 10; a bottom mirror structure 110, an active layer 120 and a top mirror structure 130 disposed on the substrate 10.

[0033] The top reflector structure 130 has a plurality of oxide confinement layers 131 formed therein, and the thickness of some of the oxide confinement layers 131 is different from the thickness of the remaining oxide confinement layers 131. The surface-emitting laser of this application may be, for example, a vertical-cavity surface-emitting laser (VCSEL). For ease of description, a VCSEL will be used as an example in the following description.

[0034] In this specific embodiment, the bottom reflector structure 110 and the top reflector structure 130 define the resonant cavity structure of the vertical cavity surface-emitting laser of this application; that is, the region between the bottom reflector structure 110 and the top reflector structure 130 is the resonant cavity. The resonant cavity is used to generate standing waves, which are waves formed by two coherent waves propagating in opposite directions along the same straight line and superimposing on each other. Specifically, when the two waves are in phase, their amplitudes are added together to form antinodes (i.e., wave crests). When the two waves are out of phase, their amplitudes are subtracted to form nodes (i.e., wave troughs). Therefore, the positions of the wave crests and troughs of the standing wave are fixed.

[0035] In one embodiment, the bottom reflector structure 110 may include a periodically stacked DBR structure, that is, a plurality of reflectors with an optical thickness of one-quarter of the lasing wavelength, the plurality of reflectors being arranged alternately according to high and low refractive indices.

[0036] It is understood that the composition, stacking cycle number, etc., of the DBR structure of the bottom reflector structure 110 and the DBR structure of the top reflector structure 130 may be the same or different, and this embodiment does not impose any limitations. The materials of the top reflector structure 130 and the bottom reflector structure 110 can be electrically insulating dielectric materials, such as silicon nitride, silicon oxide, aluminum oxide, or titanium oxide. The materials of the top reflector structure 130 and the bottom reflector structure 110 can also be semiconductor materials, such as GaAs and AlGaAs.

[0037] The substrate 10 is made of materials including, but not limited to, GaAs, InP, and Si. The bottom mirror structure 110 and the top mirror structure 130 may include films with periodically varying refractive indices to achieve efficient reflection or transmission of light within a specific wavelength range. These films can be made of semiconductor materials, dielectric materials, or metal-dielectric hybrid materials. For example, the bottom mirror structure 110 may be an N-type semiconductor layer, and the top mirror structure 130 may be a P-type semiconductor layer. Alternatively, the bottom mirror structure 110 may be a P-type semiconductor layer, and the top mirror structure 130 may be an N-type semiconductor layer. Optionally, the materials of the N-type and P-type semiconductor layers may be, but are not limited to, GaAs, AlGaAs, etc. This is not a limitation; as long as the resonant cavity can be defined, it falls within the scope of this embodiment.

[0038] The active layer 120 may include one, two, three, or four active regions. Each active region may contain one or more multi-quantum-well structures. The multi-quantum-well structures are used to generate photons through stimulated emission, and the emitted photons are continuously reflected in the resonant cavity defined by the bottom mirror structure 110 and the top mirror structure 130, and are continuously amplified during the reflection process, thereby ultimately emitting laser light at a specific wavelength with sufficient energy.

[0039] The multiple quantum well structure is where laser gain amplification occurs. The center of the multiple quantum well structure can be aligned with the location of the strongest light field to achieve a greater amplification effect. Furthermore, when multiple multiple quantum well structures are included, their confinement factors within the same light field segment are within the same preset range; that is, the confinement factors of each multiple quantum well structure are maintained at the same level, ensuring that each multiple quantum well structure contributes similarly to the light emission. Understandably, similar light emission contributions mean more uniform current injection into each multiple quantum well structure, which helps reduce the device's threshold current, thereby reducing power consumption and extending its lifespan. Moreover, when each multiple quantum well structure contributes similarly to the light emission, the distribution of charge carriers within each multiple quantum well structure will be more uniform, which helps reduce carrier recombination losses, thereby improving the overall luminous efficiency of the device.

[0040] In one embodiment, along the direction away from the active layer 120, each oxidation restriction layer in the top reflective structure 130 is divided into multiple groups, and the oxidation depth of each group of oxidation restriction layers is basically the same, while the oxidation depth of the oxidation restriction layers in different groups is different.

[0041] It is understandable that by using wet oxygen oxidation to achieve multiple sets of oxide layer structures with different light-emitting aperture sizes, it is possible to reduce the overall parasitic capacitance by connecting multiple oxide confinement layer capacitors in series.

[0042] In one embodiment, the oxidation depth of the oxidation restriction layers 131 in different groups gradually decreases along the direction away from the active layer 120.

[0043] It is understandable that by gradually reducing the oxidation depth of different groups of oxide confinement layers 131 along the direction away from the active layer 120, the light emission aperture size of different groups of oxide confinement layers 131 is different, which facilitates the reduction of the overall parasitic capacitance by connecting multiple oxide confinement layer capacitors in series.

[0044] In one embodiment, the set of oxide confinement layers 131 closest to the active layer 120 is used to define the emission aperture of the surface-emitting laser; and the thickness of the oxide confinement layer farthest from and closest to the active layer 120 in the set of oxide confinement layers 131 is different from the thickness of the other oxide confinement layers in the set.

[0045] In one embodiment, among the group of oxidation confinement layers closest to the active layer 120, the thickness of the oxidation confinement layer farthest from and closest to the active layer 120 is less than the thickness of the remaining oxidation confinement layers in the group.

[0046] Optionally, the number of the remaining oxidized confinement layers in this group can be 1 layer, 2 layers, or multiple layers.

[0047] Optionally, in the group of oxidation confinement layers closest to the active layer 120, the thicknesses of the oxidation confinement layers furthest from the active layer 120 and the thicknesses of the oxidation confinement layers closest to the active layer 120 are not equal; the thickness of the thin oxidation confinement layer 131 furthest from the active layer 120 in this group of oxidation confinement layers 13 is less than the thickness of the thick oxidation confinement layer 132 closest to the active layer 120; or as... Figure 2 As shown, the thickness of the thickest oxide confinement layer 133, which is furthest from the active layer 120, in this group of oxide confinement layers 13 is less than the thickness of the thinnest oxide confinement layer 131, which is closest to the active layer 120.

[0048] In one embodiment, among the group of oxide confinement layers closest to the active layer 120, the thicker oxide confinement layer is used to define the emission aperture of the surface-emitting laser.

[0049] like Figure 3 As shown, in one embodiment, among the group of oxide confinement layers 13 closest to the active layer 120, the thin oxide confinement layers 131 farthest from and closest to the active layer 120 have equal thicknesses of 5-15 nm; the remaining oxide confinement layers 132 in this group have equal thicknesses of 20-35 nm.

[0050] Optionally, among the group of oxide confinement layers closest to the active layer 120, the thickness of the thin oxide confinement layer 131, which is farthest from and closest to the active layer 120, can be 5 nm, 10 nm, or 15 nm. Considering that an oxide confinement layer that is too thin will actually oxidize very slowly or hardly at all, it is crucial to select an appropriate thickness for the thin oxide confinement layer. In this specific embodiment, it is recommended that the thickness of the thin oxide confinement layer 131 be between 10 nm and 15 nm. Alternatively, the overall thickness of the so-called thin oxide confinement layer 131 before oxidation can be the same as the thickness of the thicker oxide confinement layer 132, but by controlling the water-oxygen ratio or concentration during oxidation or by further grading the high-aluminum component in the layer, a relatively thin oxide confinement layer 131 can be obtained.

[0051] In addition, setting thinner oxide confinement layers on both sides of the thick oxide confinement layer that forms the oxide pore can further improve the current injection path, allowing more current to flow towards the center of the oxide pore. Higher current injection at the center means that lower-order modes will be excited more.

[0052] Optionally, in a group of oxidation confinement layers closest to the active layer 120, the thickness of the remaining oxidation confinement layers, except for the oxidation confinement layers furthest from and closest to the active layer 120, can be 20 nm, 25 nm, 30 nm, or 35 nm.

[0053] It is understandable that by setting thin oxide confinement layers at both ends and a thick oxide confinement layer in the group of oxide confinement layers closest to the active layer 120, the capacitance can be reduced and the stress can be distributed. This makes the stress near the oxide hole basically evenly distributed, thereby reducing the impact of the large stress generated by the thicker oxide confinement layer during the oxidation process on the crystal quality and improving product performance.

[0054] like Figure 4 As shown, in one possible embodiment, in the group of oxidation restriction layers closest to the active layer 120, the oxidation restriction layers within the group of oxidation restriction layers are arranged in a thin / thick / thin / thick manner.

[0055] Optionally, the thinner oxide confinement layers in this group of oxide confinement layers have equal thicknesses, and the thicker oxide confinement layers have equal thicknesses. For example, the first oxide confinement layer (i.e., the thin oxide confinement layer 131) has a thickness of 5 nm, the second oxide confinement layer (i.e., the thick oxide confinement layer 132) has a thickness of 20 nm, the third oxide confinement layer (i.e., the thin oxide confinement layer 131) has a thickness of 5 nm, and the fourth oxide confinement layer (i.e., the thick oxide confinement layer 132) has a thickness of 20 nm.

[0056] In another embodiment, among the group of oxide confinement layers closest to the active layer 120, the thicknesses of the thin oxide confinement layers within this group are unequal. For example, the thickness of the oxide confinement layer closest to the active layer 120 in this group is less than the thickness of the oxide confinement layer farther from the active layer 120. That is, according to the above arrangement, the thickness of the first oxide confinement layer closest to the active layer 120 is less than or greater than the thickness of the third oxide confinement layer, while the thicknesses of the second and fourth oxide confinement layers can be equal or unequal, but their thicknesses are all greater than the thicknesses of the first and third oxide confinement layers. For example, the thickness of the first oxide confinement layer is 5 nm, the thickness of the second oxide confinement layer is 20 nm, the thickness of the third oxide confinement layer is 10 nm, and the thickness of the fourth oxide confinement layer is 20 nm. Another example: the thickness of the first oxide confinement layer is 10 nm, the thickness of the second oxide confinement layer is 20 nm, the thickness of the third oxide confinement layer is 5 nm, and the thickness of the fourth oxide confinement layer is 20 nm.

[0057] In another embodiment, the thickness of the second oxide confinement layer is less than the thickness of the fourth oxide confinement layer; or the thickness of the second oxide confinement layer is greater than the thickness of the fourth oxide confinement layer; or the thickness of the second oxide confinement layer is equal to the thickness of the fourth oxide confinement layer. For example, the thickness of the second oxide confinement layer is 20 nm and the thickness of the fourth oxide confinement layer is 25 nm. Yet another example: the thickness of the second oxide confinement layer is 25 nm and the thickness of the fourth oxide confinement layer is 20 nm.

[0058] In one embodiment, the top reflector structure 130 includes multiple pairs of Al x GaAs / Al 1-x GaAs periodic stacked structure, where 0.12 ≤ x < 1.

[0059] Optionally, x can be 0.12.

[0060] In one embodiment, the aluminum composition in the AlGaAs material forming the oxide confinement layer 131 is gradually varied and the AlGaAs material is subjected to modulation doping.

[0061] It is understandable that, through the Al of the top reflector structure 130 x GaAs / Al 1-x GaAs DBR inserts materials with gradually varying Al composition into the material and uses modulation doping (δ doping) to reduce the potential barrier between the two materials in the top mirror structure 130, thereby increasing the thermal excitation current and tunneling current of charge carriers at the heterogeneous interface of the top mirror structure 130, and thus significantly reducing the series resistance.

[0062] In one embodiment, to achieve the desired high reflectivity, an additional reflectivity supplement structure (not shown) can be designed to increase the reflectivity on one side of the vertical-cavity surface-emitting laser (VCSEL) including the bottom mirror structure 110 (e.g., the top side of the VCSEL). Without the reflectivity supplement structure, the efficiency of integrating optical elements (such as gratings) in a top-mounted VCSEL with an all-semiconductor DBR mirror is lower (e.g., compared to a top-mounted VCSEL) due to the required high reflectivity and reduced interaction between the cavity mode and optical elements. Reducing the number of mirror pairs in the top mirror structure 130 increases the coupling between the cavity mode and such optical elements. However, reducing the number of mirror pairs in the top mirror structure 130 reduces the reflectivity on the side of the VCSEL including the top mirror structure. In a VCSEL, the reflectivity supplement structure is used to increase the reflectivity on the side of the VCSEL including the bottom mirror structure 110. Therefore, the number of mirror pairs in the bottom mirror structure 110 can be reduced, and the reflectivity supplementation structure can be designed to mitigate the decrease in reflectivity caused by the reduction in the number of mirror pairs in the bottom mirror structure 110. In some embodiments, the reflectivity supplementation structure may include multiple DBR pairs or another type of mirror structure. In some embodiments, the reflectivity supplementation structure is formed of a dielectric material. Therefore, in some embodiments, the reflectivity supplementation structure includes multiple dielectric DBR pairs. For example, the reflectivity supplementation structure may include multiple SiO2 / SiNx mirror pairs, multiple SiO2 / titanium dioxide (TiO2) mirror pairs, or multiple Al2O3 / TiO2 mirror pairs, and other examples. In some embodiments, the thickness of the reflectivity supplementation structure may be in the range of about 2.0 μm to about 4.0 μm, such as 2.5 μm. In some embodiments, the number of mirror pairs in the reflectivity supplementation structure ranges from three to eight mirror pairs.

[0063] like Figure 5 As shown, in one possible embodiment, the surface-emitting laser may have an N-electrode 140 formed on the side of the substrate 10 away from the bottom mirror structure 110, and a P-electrode 150 formed on the top mirror structure 130.

[0064] In one embodiment, this application also provides a light emitting component, which includes at least one surface-emitting laser.

[0065] It is understood that in this embodiment, the light-emitting component, by varying the thickness and aperture of the oxide confinement layer in the top reflector structure of the surface-emitting laser, facilitates the reduction of the overall parasitic capacitance through multiple oxide confinement layer capacitors connected in series. Furthermore, by varying the Al of the top reflector structure... x GaAs / Al 1-x GaAs DBR inserts materials with gradually varying Al composition into the material and uses modulated doping (δ doping) to reduce the potential barrier between the two materials in the top mirror structure, thereby increasing the thermal excitation current and tunneling current of charge carriers at the heterogeneous interface of the top mirror structure, and thus significantly reducing the series resistance.

[0066] In one embodiment, this application also provides an optical module including at least one optical emitting component as described above.

[0067] It is understandable that in this embodiment, the optical module, by varying the thickness and aperture of the oxide confinement layer in the top reflector structure of the surface-emitting laser, facilitates the reduction of the overall parasitic capacitance through multiple oxide confinement layer capacitors connected in series. Furthermore, by adjusting the Al of the top reflector structure... x GaAs / Al 1-x GaAsDBR inserts materials with gradually varying Al composition into the material and employs modulation doping (δ doping) to reduce the potential barrier between the two materials at the interface of the top mirror structure. This increases the thermal excitation current and tunneling current of charge carriers at the heterogeneous interface of the top mirror structure, thereby significantly reducing the series resistance.

[0068] The foregoing disclosure provides illustrations and descriptions, but is not intended to be exhaustive or to limit the embodiments to the precise forms disclosed. Modifications and variations may be made in light of the foregoing disclosure or may be derived from practice of the embodiments. Furthermore, any embodiments described herein may be combined unless the foregoing disclosure expressly provides for reasons why one or more embodiments may not be combined.

[0069] Even though specific combinations of features are listed in the claims and / or disclosed in the specification, these combinations are not intended to limit the disclosure of the various embodiments. In fact, many of these features can be combined in ways not specifically listed in the claims and / or disclosed in the specification. Although each dependent claim listed below may directly depend on only one claim, the disclosure of the various embodiments includes each dependent claim combined with each other claim in the claim set. As used herein, the phrase “at least one of” in the list of items refers to any combination of these items, including a single member. As an example, “at least one of: a, b, or c” is intended to cover a, b, c, ab, ac, bc, and abc, as well as any combination having multiple identical items.

[0070] When a component or one or more components (e.g., a laser emitter or one or more laser emitters) is described or required (within a single claim or across multiple claims) to perform or be configured to perform multiple operations, this language is intended to broadly cover a wide range of architectures and environments. For example, unless explicitly required otherwise (e.g., by using “first component” and “second component” or other language distinguishing components in the claims), this language is intended to cover a single component performing or configured to perform all operations, a group of components jointly performing or configured to perform all operations, a first component performing or configured to perform a first operation and a second component performing or configured to perform a second operation, or any combination of components performing or configured to perform operations. For example, when a claim takes the form “one or more components are configured to: perform X; perform Y; and perform Z,” the claim should be interpreted as meaning “one or more components are configured to perform X; one or more (possibly different) components are configured to perform Y; and one or more (possibly different) components are configured to perform Z.”

[0071] The elements, actions, or instructions used herein should not be construed as critical or necessary unless explicitly stated otherwise. Furthermore, as used herein, the articles “a” and “one” are intended to include one or more items and may be used interchangeably with “one or more.” Further, as used herein, the article “the” is intended to include one or more items referenced in combination with the article “the” and may be used interchangeably with “the one or more.” Additionally, as used herein, the term “set” is intended to include one or more items (e.g., related items, unrelated items, or a combination of related and unrelated items) and may be used interchangeably with “one or more.” Where only one item is intended, the phrase “only one” or similar language is used. Furthermore, as used herein, the terms “having,” “containing,” “with,” etc., are intended to be open-ended terms. Further, unless explicitly stated otherwise, the phrase “based on” is intended to mean “at least partially based on.” Furthermore, as used herein, unless otherwise expressly stated (e.g., when used in combination with “any one” or “only one of”), the term “or” is intended to be inclusive when used in series and can be used interchangeably with “and / or”. Further, for ease of description, spatially relative terms such as “below,” “lower,” “above,” “upper,” etc., may be used herein to describe the relationship of an element or feature to another element(s) or feature(s) illustrated in the accompanying drawings. In addition to the orientations depicted in the accompanying drawings, spatially relative terms are intended to cover different orientations of devices, apparatuses, and / or elements in use or operation. The device may be oriented in other ways (rotated 90 degrees or otherwise), and the spatially relative descriptors used herein shall be interpreted accordingly.

Claims

1. A surface-emitting laser, characterized in that, include: Substrate; A bottom mirror structure, an active layer, and a top mirror structure disposed on the substrate; The top reflector structure has several oxide confinement layers, and the thickness of some of the oxide confinement layers is different from the thickness of the rest of the oxide confinement layers.

2. The surface-emitting laser according to claim 1, characterized in that, Along the direction away from the active layer, each of the oxidation restriction layers is divided into multiple groups, and the oxidation depth of the oxidation restriction layer in each group is basically the same, while the oxidation depth of the oxidation restriction layer in different groups is different.

3. The surface-emitting laser according to claim 2, characterized in that, Along the direction away from the active layer, the oxidation depth of the oxidation restriction layer in different groups gradually decreases.

4. The surface-emitting laser according to claim 2, characterized in that, The group of oxide confinement layers closest to the active layer is used to define the emission aperture of the surface-emitting laser; and the thickness of the oxide confinement layers farthest from and closest to the active layer in this group of oxide confinement layers is different from the thickness of the other oxide confinement layers in the group.

5. The surface-emitting laser according to claim 4, characterized in that, In the group of oxidation confinement layers closest to the active layer, the thickness of the oxidation confinement layer farthest from and closest to the active layer is less than the thickness of the other oxidation confinement layers in the group.

6. The surface-emitting laser according to claim 5, characterized in that, Among the group of oxide confinement layers closest to the active layer, the thickest oxide confinement layer with the deepest oxidation depth is used to define the emission aperture of the surface-emitting laser.

7. The surface-emitting laser according to claim 5, characterized in that, In the group of oxidation confinement layers closest to the active layer, the thickness of the oxidation confinement layers farthest from and closest to the active layer is equal, with a thickness of 5-15 nm; the thickness of the remaining oxidation confinement layers in this group is equal, with a thickness of 20-35 nm.

8. The surface-emitting laser according to claim 4, characterized in that, In the group of oxidation confinement layers closest to the active layer, the oxidation confinement layers within this group are arranged in a thin / thick / thin / thick manner.

9. The surface-emitting laser according to any one of claims 1-8, characterized in that, The top reflector structure comprises multiple pairs of periodically stacked AlxGaAs / Al1-xGaAs structures, where 0.12 ≤ x < 1.

10. The surface-emitting laser according to claim 9, characterized in that, The aluminum composition in the AlGaAs material forming the oxide confinement layer is gradually varied, and the AlGaAs material is subjected to modulated doping.

11. A light-emitting component, characterized in that, Includes the surface-emitting laser as described in any one of claims 1-10.

12. An optical module, characterized in that, It includes an optical emitting module and an optical receiving module, wherein the optical emitting module is the optical emitting component as described in claim 11.

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