Electronic equipment assembly, protection assembly and electronic equipment

Abstract

The invention provides an electronic equipment assembly, a protection assembly and electronic equipment. The electronic device assembly comprises an electronic device and a protection assembly. The protection assembly is detachably installed on the electronic equipment, a high-resistance structure is arranged on the protection assembly, the high-resistance structure and the electronic equipment are arranged in a spaced mode, the high-resistance structure and the electronic equipment jointly form an electrostatic discharge path, and the electrostatic discharge path is configured to discharge static electricity when the electronic equipment assembly makes contact with a static power source and an electric conductor. And charges generated by the static power supply are conducted to the conductor. Therefore, according to the electronic equipment assembly, the protection assembly and the electronic equipment provided by the invention, the adverse effect of the electrostatic current on the electrostatic body can be reduced.

Description

Technical Field

[0001] The present application relates to the field of static elimination, and more particularly, to an electronic device component, a protection component, and an electronic device. Background Art

[0002] When a static electricity source carries static electricity, due to the relatively high static electricity voltage, if the static electricity source comes into contact with a conductor having a relatively small resistance, a relatively large static electricity current will be generated between the static electricity source and the conductor, which may damage the static electricity source. For example, when the static electricity source is a human body, a relatively large static electricity current will cause a tingling sensation to the human body and even endanger human safety. Summary of the Invention

[0003] In view of the above problems, the present application provides an electronic device component, a protection component, and an electronic device.

[0004] In a first aspect, the present application provides an electronic device component, including an electronic device and a protection component. The protection component is detachably mounted on the electronic device. A high-resistance structure is provided on the protection component. The high-resistance structure is spaced apart from the electronic device and together with the electronic device forms a static electricity discharge path, which is configured to conduct the charge generated by the static electricity source to the conductor when the electronic device component comes into contact with the static electricity source and the conductor. By jointly forming a static electricity discharge path between the static electricity source and the conductor through the protection component and the electronic device, the static electricity carried by the static electricity source can be quickly discharged to the conductor, reducing the harm of static electricity to the static electricity source. In addition, by providing a high-resistance structure on the protection component, it is equivalent to providing a high-resistance resistor in the static electricity discharge path, which can effectively reduce the static electricity current formed when the static charge is discharged, thereby reducing the adverse impact of the static electricity current on the static electricity body.

[0005] In a possible implementation, a conductive structure is further provided on the protection component. The conductive structure is spaced apart from the electronic device, and the high-resistance structure is provided on the conductive structure. The high-resistance structure, the conductive structure, and the electronic device jointly form a static electricity discharge path. By providing a conductive structure on the protection component in the present application, it is easier to form a discharge gap between the protection component and the electronic device, so that the static charge is more easily transferred to the electronic device, so that the protection component and the electronic device jointly cooperate to form a static electricity discharge path.

[0006] In a possible implementation, a parasitic antenna is further provided on the protection component. The parasitic antenna is connected to the conductive structure and is spaced apart from the antenna structure of the electronic device. The high-resistance structure is provided on the parasitic antenna. The high-resistance structure, the parasitic antenna, the conductive structure, and the electronic device jointly form a static electricity discharge path. By providing a parasitic antenna in the present application, the antenna performance of the antenna structure of the electronic device can be enhanced, and at the same time, it can be connected to the conductive structure to form a static electricity discharge path.

[0007] In a possible implementation, an extension structure is further provided on the protection component. The extension structure is connected to the conductive structure. The parasitic antenna is spaced apart from the feeding portion of the antenna structure of the electronic device. The high-resistance structure is disposed on the extension structure. The high-resistance structure, the extension structure, the conductive structure, and the electronic device together form an electrostatic discharge path. By providing the extension structure in this application, a discharge gap can be more easily formed between the protection component and the electronic device, so that static charges can be more easily transferred to the electronic device, so that the protection component and the electronic device cooperate with each other to form an electrostatic discharge path.

[0008] In a possible implementation, the resistance value of the high-resistance structure is 1 to 100 MΩ.

[0009] In a possible implementation, the material of the high-resistance structure is at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic.

[0010] In a second aspect, this application provides an electronic device including a high-resistance structure. The high-resistance structure is disposed on the outer surface of the electronic device. The high-resistance structure and the body of the electronic device together form an electrostatic discharge path, and the electrostatic discharge path is configured to conduct the charges generated by the static power source to the conductor when the electronic device is in contact with the static power source and the conductor. In this application, an electrostatic discharge path between the static power source and the conductor is formed by the outer surface of the electronic device and the high-resistance structure together, so that the static charges carried by the static power source can be quickly discharged to the conductor, reducing the harm of static electricity to the static power source. In addition, setting the high-resistance structure on the outer surface is equivalent to setting a high-resistance resistor in the electrostatic discharge path, which can effectively reduce the electrostatic current formed when the static charges are discharged, thereby reducing the adverse impact of the electrostatic current on the static body.

[0011] In a possible implementation, the electronic device includes a middle frame and a rear cover. The high-resistance structure is disposed on the outer surface of at least one of the middle frame and the rear cover.

[0012] In a possible implementation, the electronic device is a foldable electronic device. The foldable electronic device includes a first housing, a second housing, and a rotating shaft assembly. The first housing and the second housing are rotatably connected through the rotating shaft assembly. The high-resistance structure is disposed on the outer surface of at least one of the first housing, the second housing, and the rotating shaft assembly.

[0013] In a possible implementation, the electronic device is a wearable device. The wearable device includes a watch body and a strap assembly. The strap assembly is connected to the watch body. The high-resistance structure is disposed on the outer surface of at least one of the watch body and the strap assembly.

[0014] In a possible implementation, the resistance value of the high-resistance structure is 1 to 100 MΩ.

[0015] In a possible implementation, the material of the high-resistance structure is at least one of barium titanate-bismuth scandium oxide ceramics, hafnium dioxide ceramics, and titanium dioxide ceramics.

[0016] In a third aspect, the present application provides a protection component, which includes a body and a high-resistance structure. The body is used to be detachably mounted on an electronic device to protect the electronic device. The high-resistance structure is disposed on the component body and is configured to conduct the charges generated by the static power source to the conductor when the protection component comes into contact with the static power source and the conductor. The resistance value of the high-resistance structure is 0.5 to 1 MΩ. By providing a high-resistance structure on the body of the protection component, the protection component serves as an electrostatic discharge path between the static power source and the conductor, so that the static charges carried by the static power source can be quickly discharged to the conductor, reducing the harm of static electricity to the static power source. At the same time, the resistance of the high-resistance structure is relatively large but smaller than that of the insulator, thereby improving the conduction efficiency of the static charges and effectively reducing the static current formed during the static charge discharge, thus reducing the adverse effects of the static current on the static body.

[0017] In a possible implementation, the material of the high-resistance structure is at least one of barium titanate-bismuth scandium oxide ceramics, hafnium dioxide ceramics, and titanium dioxide ceramics.

[0018] In a fourth aspect, the present application provides a protection component, which includes a component body, a touch structure, a discharge structure, and a high-resistance structure. The component body is used to be detachably mounted on an electronic device to protect the electronic device. The touch structure is disposed on the component body. The discharge structure is disposed on the component body. The high-resistance structure is connected between the touch structure and the discharge structure and is configured to conduct the charges generated by the static power source to the discharge structure when the touch structure comes into contact with the static power source.

[0019] In a possible implementation, the resistance value of the high-resistance structure is 1 to 100 MΩ.

[0020] Thus, the electronic device component, protection component, and electronic device provided by the present application can form an electrostatic discharge path between the static power source and the conductor, so that the static charges carried by the static power source can be discharged and transferred to the conductor through the electrostatic discharge path, thereby achieving electrostatic discharge. In addition, by providing a high-resistance structure in the electrostatic discharge path, the static current can be reduced, thereby reducing the adverse effects of the static current on the static body. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of an electrostatic discharge path provided by an embodiment of the present application.

[0022] Figure 2 It is a schematic diagram of an application scenario of an electronic device component provided by an embodiment of the present application.

[0023] Figure 3 Schematic diagram of the application scenario of the electronic device provided by an embodiment of the present application.

[0024] Figure 4 Schematic diagram of the application scenario of the protection component provided by an embodiment of the present application.

[0025] Figure 5 Schematic diagram of the protection component provided by an embodiment of the present application.

[0026] Figure 6 Schematic diagram of a foldable electronic device provided by an embodiment of the present application.

[0027] Figure 7 Schematic diagram of the wearable device provided by an embodiment of the present application.

[0028] Figure 8 Schematic diagram of the electronic device provided by an embodiment of the present application.

[0029] Figure 9 is Figure 8 Schematic diagram of the return loss of the antenna structure of the electronic device in

[0030] Figure 10 Schematic diagram of an electronic device component provided by an embodiment of the present application.

[0031] Figure 11 Schematic diagram of an electronic device component provided by an embodiment of the present application.

[0032] Figure 12 Schematic diagram of an electronic device component provided by an embodiment of the present application.

[0033] Figure 13 is Figure 12 Schematic diagram of the return loss of the antenna structure of the electronic device in

[0034] Figure 14 Schematic diagram of an electronic device component provided by an embodiment of the present application.

[0035] Figure 15 is Figure 14 Schematic diagram of the return loss of the antenna structure of the electronic device in Detailed implementation manners

[0036] Next, the technical solutions in the embodiments of the present application will be clearly described in conjunction with the accompanying drawings in the embodiments of the present application.

[0037] It is understandable that the connection relationships described in this application refer to direct or indirect connections. For example, when A is connected to B, it can be either a direct connection between A and B or an indirect connection between A and B through one or more other electrical components. For example, it can be a direct connection between A and C and a direct connection between C and B, thus enabling a connection between A and B through C. It is also understandable that "A is connected to B" described in this application can be a direct connection between A and B or an indirect connection between A and B through one or more other electrical components.

[0038] In the description of this application, unless otherwise specified, " / " means "or". For example, A / B can represent A or B. "And / or" in this article is merely a description of the association relationship of associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone, these three situations.

[0039] In the description of this application, words such as "first" and "second" are only used to distinguish different objects, and do not limit the quantity and execution order. Moreover, words such as "first" and "second" do not necessarily mean different. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion.

[0040] Please refer to Figure 1 , Figure 1 which is a schematic diagram of the electrostatic discharge path 11 provided by an embodiment of this application.

[0041] Among them, Figure 1 Figure (a) in

[0042] is a schematic diagram of the electrostatic discharge path 11 from the static electricity source 10 to the conductor 12. The static electricity source 10 is an object or a human body that generates and accumulates static charges. For example, when the environment is relatively dry, the resistivity of the human body surface skin is relatively high and the charge dissipation speed is relatively slow. Therefore, when the human body makes actions such as friction and contact separation with other substances with relatively high resistivity and slow charge dissipation speed, such as when a person takes off a sweater or stands up from a seat, the human body will generate a large amount of static charges. And because the environment is relatively dry, the resistivity of the air is relatively high, and the static charges on the human body are also difficult to conduct and transfer through the dry air. As a result, the human body will accumulate a large amount of static charges. Here, this application takes the static electricity source 10 as an example of the human body for illustration, but this application does not make any limitation on the type of the static electricity source 10.

[0043] The conductor 12 is an object with relatively low resistivity and is easy to conduct charges or current. For example, the conductor 12 can be metal, graphite, electrolyte solution, conductive polymer material, carbon fiber, etc. Here, this application takes the conductor 12 as an example of metal for illustration, but this application does not make any limitation on the type of the conductor 12.

[0044] The static electricity discharge path 11 is a path for the flow, transfer, and conduction of static charges formed between the static electricity source 10 and the conductor 1. That is, the static electricity discharge path 11 is configured to conduct the charges generated by the static electricity source 10 to the conductor 12. Specifically, when the static electricity source 10 contacts the conductor 12 through the static electricity discharge path 11, the static charges accumulated on the static electricity source 10 flow, transfer, and conduct onto the conductor 12 through the static electricity discharge path 11, so that the static charges accumulated on the static electricity source 10 are reduced and the static electricity voltage on the static electricity source 10 is lowered. Here, this application takes the electronic device component or the protection component forming the static electricity discharge path 11 as an example for illustration, but this application does not make any limitation on the specific implementation manner and formation manner of the static electricity discharge path 11.

[0045] For example, as Figure 1 shown in FIG. (b), when the static electricity source 10 is a human body and the conductor 12 is metal, if the human body contacts the metal through the electronic device, for example, the human body holds the electronic device and contacts the metal, then the electronic device can form the static electricity discharge path 11. That is, the static electricity discharge path 11 is configured to conduct the charges generated by the static electricity source 10 to the conductor 12 when the electronic device contacts the static electricity source 10 and the conductor 12.

[0046] In order to reduce the static electricity current in the static electricity discharge path 11 and thus reduce the tingling sensation and harm caused by the static electricity current to the human body, a high-resistance structure is provided on the electronic device. The impedance of the high-resistance structure is relatively large, and the high-resistance structure is also a part of the static electricity discharge path 11. In this way, the static electricity current will flow through the high-resistance structure, so that the static electricity current is reduced. At this time, the human body can be equivalent to a capacitor C1, the holding air gap between the human body and the electronic device can be equivalent to a discharge gap, the structure with a relatively small impedance on the electronic device can be equivalent to a low-resistance resistor Rl, the high-resistance structure can be equivalent to a high-resistance resistor Rh, and the conductor 12 can be equivalent to grounding. Thus, the discharge gap, the low-resistance resistor Rl, and the high-resistance resistor Rh cooperate together to form the static electricity discharge path 11.

[0047] Please refer to Figure 2 , Figure 2 which is a schematic diagram of the application scenario of the electronic device component 11a provided by an embodiment of this application.

[0048] Here, the static electricity source 10 is a human body, the conductor 12 is a metal door, and the electronic device component 11a forms the static electricity discharge path 11. That is, the static electricity discharge path 11 is configured to conduct the charges generated by the static electricity source 10 to the conductor 12 when the electronic device component 11a contacts the static electricity source 10 and the conductor 12.

[0049] Specifically, a human body holds the electronic device component 11a, and the electronic device component 11a touches a metal door, so that the static electricity carried by the human body will be discharged, released, and transferred to the metal door through the electronic device component 11a.

[0050] Among them, the electronic device component 11a includes an electronic device and a protection component. The protection component is detachably mounted on the electronic device. A high-resistance structure is provided on the protection component and / or the electronic device. The impedance of the high-resistance structure is relatively large, and the high-resistance structure is also part of the static electricity discharge path 11. In this way, the static electricity current will flow through the high-resistance structure, so that the static electricity current is reduced, the tingling sensation caused by the static electricity current to the human body is reduced, and the safety risk of the static electricity current to the human body is reduced.

[0051] Please refer to Figure 3 , Figure 3 which is a schematic diagram of the application scenario of the electronic device 11b provided in an embodiment of the present application.

[0052] Here, the static electricity source 10 is the human body, the conductor 12 is the metal door, and the electronic device 11b forms the static electricity discharge path 11. That is, the static electricity discharge path 11 is configured to conduct the charge generated by the static electricity source 10 to the conductor 12 when the electronic device 11b is in contact with the static electricity source 10 and the conductor 12.

[0053] Specifically, a human body holds the electronic device 11b, and the electronic device 11b touches a metal door, so that the static electricity carried by the human body will be discharged, released, and transferred to the metal door through the electronic device 11b.

[0054] Among them, a high-resistance structure is provided on the outer surface of the electronic device 11b. The impedance of the high-resistance structure is relatively large, and the high-resistance structure is also part of the static electricity discharge path 11. That is, the high-resistance structure and the body of the electronic device jointly form the static electricity discharge path 11. In this way, the static electricity current will flow through the high-resistance structure, so that the static electricity current is reduced, the tingling sensation caused by the static electricity current to the human body is reduced, and the safety risk of the static electricity current to the human body is reduced.

[0055] Please refer to Figure 4 and Figure 5 , Figure 4 which is a schematic diagram of the application scenario of the protection component 11c provided in an embodiment of the present application. Figure 5 which is a schematic diagram of the protection component 11c provided in an embodiment of the present application.

[0056] The protection component 11c includes a component body. The component body is used for detachably mounting on the electronic device to protect the electronic device. A touch structure 11c_1, a discharge structure 11c_2, and a high-resistance structure 11c_3 are provided on the component body.

[0057] The high - resistance structure 11c_3 is connected between the touch structure 11c_1 and the discharge structure 11c_2. Among them, the touch structure 11c_1 is configured to contact the static power source 10. Here, the static power source 10 is the human body. The discharge structure 11c_2 is the conductor 12. The high - resistance structure 11c_3 forms an electrostatic discharge path 11. That is, the high - resistance structure 11c_3 is configured to conduct the charges generated by the static power source 10 to the discharge structure 11c_2 when the touch structure 11c_1 contacts the static power source 10.

[0058] Specifically, when the human body touches the touch structure 11c_1 on the protection component 11c, the static charges carried by the human body will be discharged, released, and transferred to the discharge structure 11c_2 through the touch structure 11c_1 and the high - resistance structure 11c_3. Since the impedance of the high - resistance structure 11c_3 is relatively large, and the high - resistance structure 11c_3 is also a part of the electrostatic discharge path 11, the electrostatic current will flow through the high - resistance structure 11c_3, thereby reducing the electrostatic current, reducing the tingling sensation caused by the electrostatic current to the human body, and reducing the safety risk of the electrostatic current to the human body.

[0059] In some embodiments, the touch structure 11c_1, the discharge structure 11c_2, and the high - resistance structure 11c_3 can all be arranged on one surface of the component body, or the touch structure 11c_1, the discharge structure 11c_2, and the high - resistance structure 11c_3 can be arranged on different surfaces of the component body. The present application does not make any limitation on the arrangement positions of the touch structure 11c_1, the discharge structure 11c_2, and the high - resistance structure 11c_3.

[0060] Please refer to Figure 6 , Figure 6 which is a schematic diagram of a foldable electronic device 111b provided by an embodiment of the present application.

[0061] Here, the electronic device 11b is the foldable electronic device 111b. The foldable electronic device 111b includes a first housing 111b_1, a second housing 111b_2, and a rotating shaft assembly 111b_3. Among them, the first housing 111b_1 and the second housing 111b_2 are rotatably connected through the rotating shaft assembly 111b_3. In different usage states, the user can rotate the first housing 111b_1 and the second housing 111b_2 around the rotating shaft assembly 111b_3 to realize different usage states of the unfolded state and the folded state of the foldable electronic device 111b.

[0062] In some embodiments, regions such as the outer surfaces of the rotating shaft assembly 111b_3, the first housing 111b_1, and the second housing 111b_2 can be prepared using high-resistance materials, so that the surface resistance value of at least one of the rotating shaft assembly 111b_3, the first housing 111b_1, and the second housing 111b_2 is 1 to 100 MΩ to form a high-resistance structure.

[0063] In some other embodiments, a high-resistance structure can be provided on the outer surface of at least one of the rotating shaft assembly 111b_3, the first housing 111b_1, and the second housing 111b_2. The resistance value of the high-resistance structure is 1 to 100 MΩ.

[0064] In this way, after a human body holds the foldable electronic device 111b and touches the above-mentioned high-resistance structure, since the foldable electronic device 111b also touches the conductor 12, the static charge carried by the human body will be discharged, released, and transferred to the conductor 12 through the high-resistance structure on the foldable electronic device 111b. And, because the impedance of the high-resistance structure is large and the high-resistance structure is also a part of the static electricity discharge path 11, the static electricity current will flow through the high-resistance structure, thereby reducing the static electricity current, reducing the tingling sensation caused by the static electricity current to the human body, and reducing the safety risk of the static electricity current to the human body.

[0065] Please refer to Figure 7 , Figure 7 which is a schematic diagram of the wearable device 112b provided in an embodiment of the present application.

[0066] Here, the electronic device 11b is the wearable device 112b. Among them, the wearable device 112b can be a smart watch, a smart bracelet, etc. The wearable device 112b includes a watch body 112b_1 and a bracelet assembly 112b_2. The watch body 112b_1 and the bracelet assembly 112b_2 are connected. The wearable device 112b can be worn on the user's wrist through the bracelet assembly 112b_2.

[0067] In some embodiments, regions such as the outer surfaces of at least one of the bracelet assembly 112b_2 and the watch body 112b_1 can be prepared using high-resistance materials, so that the surface resistance value of at least one of the bracelet assembly 112b_2 and the watch body 112b_1 is 1 to 100 MΩ to form a high-resistance structure.

[0068] In some other embodiments, a high-resistance structure can be provided on the outer surface of at least one of the bracelet assembly 112b_2 and the watch body 112b_1. The resistance value of the high-resistance structure is 1 to 100 MΩ.

[0069] Thus, when a human body wears the wearable device 112b and touches the conductive body 12 with the wearable device 112b, the static charge carried by the human body will be discharged, released, and transferred to the conductive body 12 through the high-resistance structure on the wearable device 112b. Moreover, since the impedance of the high-resistance structure is relatively large and the high-resistance structure is also a part of the static electricity discharge path 11, the static electricity current will flow through the high-resistance structure, thereby reducing the static electricity current, reducing the tingling sensation caused by the static electricity current to the human body, and reducing the safety risk of the static electricity current to the human body.

[0070] Please refer to Figure 8 , Figure 8 which is a schematic diagram of an electronic device 113b provided by an embodiment of the present application.

[0071] Here, the electronic device 113b is a mobile phone, a tablet computer, a personal digital assistant (PDA), a laptop computer, a vehicle-mounted device, an Internet of Things device, etc.

[0072] The electronic device 113b includes an antenna structure 113b_1. The antenna structure 113b_1 includes a metal frame 113b_2, a feeding part 113b_3, and an antenna body 113b_4. At least one slit is formed in the metal frame 113b_2, thereby dividing the metal frame 113b_2 into at least two radiation parts. Each radiation part is connected to the antenna body 113b_4 through at least one feeding part 113b_3. The antenna body 113b_4 feeds current to the corresponding radiation part through the feeding part 113b_3, thereby exciting the corresponding wireless mode, for example, GPS mode, WiFi 2.4GHz mode, WiFi 5GHz mode, etc.

[0073] A high-resistance structure 113b_5 is provided on the metal frame 113b_2. Here, the high-resistance structure 113b_5 is the high-resistance structure on the electronic device 113b. The impedance of the high-resistance structure is relatively large, and the high-resistance structure is also a part of the static electricity discharge path 11. Therefore, when both the static electricity source 10 and the conductive body 12 are in contact with the high-resistance structure 113b_5 of the electronic device 113b, the static electricity discharge path 11 includes the high-resistance structure 113b_5 and the antenna structure 113b_1.

[0074] Specifically, as shown by path P1, when the static power source 10 is the human body A and the conductor 12 is the metal door B, the human body A touches the high-resistance structure 113b_5, and thus the static charges carried by the human body A will be transferred to the high-resistance structure 113b_5. Since the high-resistance structure 113b_5 is provided on the metal frame 113b_2, the static charges will be transferred from the high-resistance structure 113b_5 to one end of the metal frame 113b_2. Since the metal frame 113b_2 is connected to the antenna body 113b_4 through the feeding part 113b_3, the static charges will be transferred from the metal frame 113b_2 to the antenna body 113b_4. Similarly, the static charges will continue to be transferred from the antenna body 113b_4 to the other ends of the metal frame 113b_2, then from the other ends of the metal frame 113b_2 to the high-resistance structure 113b_5, and then from the high-resistance structure 113b_5 to the metal door B, thus completing the static electricity discharge.

[0075] In some embodiments, the high-resistance structure 113b_5 may also be provided on other outer surfaces of the electronic device 113b, as long as the static power source 10 touches the high-resistance structure 113b_5. For example, the high-resistance structure 113b_5 may also be provided on structures such as the middle frame and the back cover of the electronic device 113b. The present application does not make any limitation on the specific setting position of the high-resistance structure 113b_5.

[0076] In some embodiments, the material of the high-resistance structure 113b_5 may be at least one of barium titanate-bismuth scandium oxide ceramics, hafnium dioxide ceramics, and titanium dioxide ceramics. The thickness of the high-resistance structure 113b_5 may be 0.1 mm. The resistivity of the high-resistance structure 113b_5 is 100 MΩ·m to 10000 MΩ·m. The total impedance of the high-resistance structure 113b_5 is 1 MΩ to 100 MΩ.

[0077] Please refer to Figure 9 , Figure 9 is Figure 8 the echo loss schematic diagram of the antenna structure of the electronic device 113b in

[0078] Among them, Figure 9 Figure (a) of Figure 9Figure (b) shows the echo loss schematic diagram of the antenna structure 113b_1 when the high-resistance structure 113b_5 is provided on the metal frame 113b_2. As can be seen from the figure, when the high-resistance structure 113b_5 is not provided on the metal frame 113b_2, the resonant frequency of the antenna structure 113b_1 is about 2.2 GHz. When the high-resistance structure 113b_5 is provided on the metal frame 113b_2, the resonant frequency of the antenna structure 113b_1 is about 2.19 GHz. That is to say, the setting of the high-resistance structure 113b_5 has very little influence on the resonant frequency of the antenna structure 113b_1. Setting the high-resistance structure 113b_5 on the metal frame 113b_2 basically does not affect the radiation performance of the antenna structure 113b_1.

[0079] Please refer to Figure 10 , Figure 10 which is a schematic diagram of an electronic device component 111a provided by an embodiment of the present application.

[0080] Among them, Figure 10 Figure (a) in Figure 10 is the front view of the electronic device component 111a. Figure 10 Figure (b) in Figure 10 is the rear view of the electronic device component 111a. As shown in Figure (a) in Figure 10 and Figure (b) in Figure 10 , the electronic device component 111a includes an electronic device 111a_1 and a protection component 111a_2. The protection component 111a_2 is detachably mounted on the electronic device 111a_1. The protection component 111a_2 is provided with a conductive structure 111a_3, a high-resistance structure 111a_5 and a parasitic antenna 111a_4. The high-resistance structure 111a_5 is provided on at least a part of the conductive structure 111a_3. The conductive structure 111a_3 is generally arranged on the side of the protection component 111a_2 facing away from the electronic device 111a_1. Among them, the side facing away from the electronic device 111a_1 is the outer surface of the protection component 111a_2. A discharge gap is formed between the conductive structure 111a_3 and the electronic device 111a_1. Here, the discharge gap is the air between the conductive structure 111a_3 and the electronic device 111a_1.

[0081] In some embodiments, the conductive structure 111a_3 also extends to the side of the protection component 111a_2 and the side close to the electronic device 111a_1. Among them, the side close to the electronic device 111a_1 is the inner surface of the protection component 111a_2. The side of the protection component 111a_2 is the side surface connecting the outer surface and the inner surface. In this way, the spacing distance between the conductive structure 111a_3 and the electronic device 111a_1 is smaller, so that it is easier to form a discharge gap between the conductive structure 111a_3 and the electronic device 111a_1.

[0082] In some embodiments, the conductive structure 111a_3 can also be disposed at other positions of the protection component 111a_2, as long as a discharge gap is formed between the conductive structure 111a_3 and the electronic device 111a_1. The present application does not impose any limitation on the setting position of the conductive structure 111a_3. The parasitic antenna 111a_4 is disposed on the outer surface of the protection component 111a_2 and connected to the conductive structure 111a_3. The parasitic antenna 111a_4 includes one or more metal branches. The parasitic antenna 111a_4 is disposed at an interval corresponding to the antenna structure of the electronic device 111a_1. Thus, the parasitic antenna 111a_4 can form a coupling with the antenna structure of the electronic device 111a_1, thereby enhancing the radiation performance of the antenna structure of the electronic device 111a_1.

[0083] A high-impedance structure 111a_5 is disposed on the parasitic antenna 111a_4. The impedance of the high-impedance structure 111a_5 is relatively large, and the high-impedance structure 111a_5 is also a part of the electrostatic discharge path 11. Therefore, when both the static power source 10 and the conductor 12 are in contact with the high-impedance structure 111a_5 of the electronic device assembly 111a, the electrostatic discharge path 11 includes the high-impedance structure 111a_5, the parasitic antenna 111a_4, and the antenna structure of the electronic device 111a_1. That is, the high-impedance structure 111a_5, the conductive structure 111a_3, and the electronic device 111a_1 together form the electrostatic discharge path 11.

[0084] Specifically, as shown by the path P2 in figure (c) of Figure 10 , when the static power source 10 is the human body A and the conductor 12 is the metal door B, the static charges carried by the human body A will be transferred to the high-impedance structure 111a_5. Since the high-impedance structure 111a_5 is disposed on the parasitic antenna 111a_4, the static charges will be transferred from the high-impedance structure 111a_5 to the parasitic antenna 111a_4 on the protection component 111a_2. Since the parasitic antenna 111a_4 is connected to the conductive structure 111a_3, the static charges will be transferred from the parasitic antenna 111a_4 to the conductive structure 111a_3. Since a discharge gap is formed between the conductive structure 111a_3 and the electronic device 111a_1, when the conductive structure 111a_3 and 112a_3 carry static charges, the voltage of the conductive structure 111a_3 is extremely high, so that the air between the conductive structure 111a_3 and the electronic device 111a_1 will be broken down, and the static charges on the conductive structure 111a_3 will be conducted to the electronic device 111a_1. Similarly, the static charges will continue to be transferred from the electronic device 111a_1 to the conductive structure 111a_3, then from the conductive structure 111a_3 to the parasitic antenna 111a_4, then from the parasitic antenna 111a_4 to the high-impedance structure 111a_5, and transferred to the metal door B, thus completing the electrostatic discharge.

[0085] In some embodiments, the conductive structure 111a_3 and the parasitic antenna 111a_4 can be metals. The material of the high-resistance structure 111a_5 can be at least one of barium titanate-bismuth scandium oxide ceramics, hafnium dioxide ceramics, and titanium dioxide ceramics. The resistivity of the high-resistance structure 111a_5 is 100 MΩ·m to 10,000 MΩ·m, and is greater than the resistivity of the conductive structure 111a_3. The total impedance of the high-resistance structure 111a_5 is 1 MΩ to 100 MΩ.

[0086] Please refer to Figure 11 , Figure 11 , which is a schematic diagram of an electronic device component 112a provided by an embodiment of the present application.

[0087] Among them, Figure 11 Figure (a) in is the front view of the electronic device component 112a. Figure 11 Figure (b) in is the rear view of the electronic device component 112a.

[0088] Figure 11 The difference between the electronic device component 112a in and Figure 10 the electronic device component 111a in is that Figure 11 the electronic device component 112a in includes a conductive structure 112a_3, a high-resistance structure 112a_5, and an extension structure 112a_4. The extension structure 112a_4 is disposed on the outer surface of the protection component 112a_2 and is connected to the conductive structure 112a_3. The extension structure 112a_4 is disposed at an interval corresponding to the antenna structure of the electronic device 112a_1. Specifically, the extension structure 112a_4 is disposed at an interval corresponding to the position of the feeding portion of the antenna structure. For example, the extension structure 112a_4 can correspond to Figure 8 the position of the feeding portion 113b_3 in and is disposed at an interval. In this way, the extension structure 112a_4 is disposed close to the antenna structure 113b_1 and the metal frame 113b_2, which is more likely to form a discharge gap between the conductive structure 112a_3 and the electronic device 112a_1, and improve the transfer efficiency of static charges.

[0089] The high-resistance structure 112a_5 is disposed on the extension structure 112a_4. The impedance of the high-resistance structure 112a_5 is relatively large, and the high-resistance structure 112a_5 is also a part of the static electricity discharge path 11. Therefore, when both the static power source 10 and the conductor 12 are in contact with the high-resistance structure 112a_5 of the electronic device component 112a, the static electricity discharge path 11 includes the high-resistance structure 112a_5, the extension structure 112a_4, and the antenna structure of the electronic device 112a_1. That is, the high-resistance structure 112a_5, the extension structure 112a_4, and the electronic device 112a_1 together form the static electricity discharge path 11.

[0090] Specifically, as in Figure 11As shown by path P3 in Figure (c), when the static power source 10 is the human body A and the conductor 12 is the metal door B, the human body A touches the high-resistance structure 112a_5, so that the static charges carried by the human body A will be transferred to the high-resistance structure 112a_5. Since the high-resistance structure 112a_5 is provided on the extension structure 112a_4, the static charges will be transferred from the high-resistance structure 112a_5 to the extension structure 112a_4 on the protection component 112a_2. Since the extension structure 112a_4 is correspondingly and spaced apart from the antenna structure of the electronic device 112a_1, a discharge gap is formed between the extension structure 112a_4 and the antenna structure of the electronic device 112a_1. Here, the discharge gap is the air between the extension structure 112a_4 and the electronic device 112a_1. When the extension structure 112a_4 carries static charges, the voltage of the extension structure 112a_4 is extremely high, so that the air between the extension structure 112a_4 and the electronic device 112a_1 will be broken down, and the static charges on the extension structure 112a_4 will be conducted to the electronic device 112a_1. Similarly, the static charges will continue to be transferred from the electronic device 112a_1 to the extension structure 112a_4, then from the extension structure 112a_4 to the high-resistance structure 112a_5, and transferred to the metal door B, thus completing the static electricity discharge.

[0091] Please refer to Figure 12 , Figure 12 which is a schematic diagram of the electronic device component 113a provided by an embodiment of the present application. Among them, Figure 12 Figure (a) in

[0092] Figure 12 The difference between the electronic device component 113a in Figure 10 and the electronic device component 112a in Figure 12 is that the electronic device component 113a in

[0093] Specifically, as shown in Figure 12As shown by path P4 in Figure (b), when the static power source 10 is the human body A and the conductor 12 is the metal door B, the human body A touches the high-resistance structure 113a_5, so that the static charge carried by the human body A will be transferred to the high-resistance structure 113a_5. Since a discharge gap is formed between the high-resistance structure 113a_5 and the electronic device 113a_1, when the high-resistance structure 113a_5 carries static charge, the voltage of the high-resistance structure 113a_5 is extremely high, so that the air between the high-resistance structure 113a_5 and the electronic device 113a_1 will be broken down, and thus the static charge on the high-resistance structure 113a_5 will be conducted to the electronic device 113a_1. Similarly, the static charge will continue to be transferred from the electronic device 113a_1 to the high-resistance structure 113a_5, and then from the high-resistance structure 113a_5 to the metal door B, thus completing the static electricity discharge.

[0094] In some other embodiments, a discharge gap may not be formed between the high-resistance structure 113a_5 and the electronic device 113a_1. Thus, when the static power source 10 is the human body A and the conductor 12 is the metal door B, the human body A touches the high-resistance structure 113a_5, so that the static charge carried by the human body A will be transferred to the high-resistance structure 113a_5. The static charge will continue to be transferred from the high-resistance structure 113a_5 to the metal door B, thus completing the static electricity discharge. That is, the static charge will not be transferred from the high-resistance structure 113a_5 to the electronic device 113a_1, but will be directly conducted to the metal door B.

[0095] Please refer to Figure 13 , Figure 13 is Figure 12 the echo loss schematic diagram of the antenna structure of the electronic device 113a_1 in

[0096] Figure 13 Figure (a) of Figure 13 Figure (b) of

[0097] Please refer to Figure 14 , Figure 14 is the schematic diagram of the electronic device component 114a provided by an embodiment of the present application.

[0098] Among them, Figure 14 Figure (a) in

[0099] Figure 14 For the electronic device component 114a in Figure 12 The difference between the electronic device component 114a and the electronic device component 113a in

[0100] is that the entire protection component 114a_2 is made of a high-resistance material, that is, the entire protection component 114a_2 forms a high-resistance structure. The resistivity of this high-resistance structure 1 is 100 MΩ·m to 10,000 MΩ·m, and the total impedance of the high-resistance structure is 1 MΩ to 100 MΩ.

[0101] Thus, since the entire protection component 114a_2 is a high-resistance structure, the high-resistance structure is spaced apart from the electronic device 114a_1, and it is easy to form a discharge gap with 114a_1, improving the transfer efficiency of static charges. Since the high-resistance structure is also a part of the static discharge path 11. Therefore, when both the static power source 10 and the conductor 12 are in contact with the electronic device component 114a, the static discharge path 11 includes the high-resistance structure and the antenna structure of the electronic device 114a_1. That is, the protection component 114a_2 and the electronic device 114a_1 jointly form the static discharge path 11.

[0102] Specifically, as shown in Figure 14 Path P5 in Figure (b) in

[0103] Please refer to Figure 15 , Figure 15 which is Figure 14 the echo loss schematic diagram of the antenna structure of the electronic device 114a_1 in

[0104] Figure 15 Figure (a) of Figure 15Figure (b) shows the echo loss diagram of the antenna structure when the entire protection component 114a_2 is made of a high-resistance material. As can be seen from the figure, when no high-resistance structure is provided on the protection component 114a_2, the resonant frequency of the antenna structure is approximately 2.2 GHz. When the entire protection component 114a_2 is made of a high-resistance material, the resonant frequency of the antenna structure is approximately 2.19 GHz. That is to say, the setting of the high-resistance structure has a minimal impact on the resonant frequency of the antenna structure. If the entire protection component 114a_2 is made of a high-resistance material, it will basically not affect the radiation performance of the antenna structure.

[0105] Therefore, the electronic device component, protection component, and electronic device provided in this application can form an electrostatic discharge path between the static power source and the conductor, so that the static charges carried by the static power source can be discharged and transferred to the conductor through the electrostatic discharge path, thereby achieving electrostatic discharge. In addition, by setting a high-resistance structure in the electrostatic discharge path, the static current can be reduced, thereby reducing the adverse effects of the static current on the static body.

[0106] Those of ordinary skill in the art of this technology should recognize that the above embodiments are only used to illustrate this application, rather than to limit this application. As long as it is within the scope of the substantial spirit of this application, appropriate changes and variations made to the above embodiments fall within the scope of protection required by this application.

Claims

1. An electronic device component, characterized in that, Comprising: An electronic device; A protection component detachably mounted on the electronic device, a high-resistance structure being provided on the protection component, the high-resistance structure being spaced apart from the electronic device and jointly forming an electrostatic discharge path with the electronic device, the electrostatic discharge path being configured to conduct the charge generated by the static power source to the conductor when the electronic device component contacts the static power source and the conductor.

2. The electronic device component according to claim 1, wherein A conductive structure is further provided on the protection component, the conductive structure being spaced apart from the electronic device, and the high-resistance structure being provided on the conductive structure; The high-resistance structure, the conductive structure, and the electronic device jointly form the electrostatic discharge path.

3. The electronic device component according to claim 2, wherein, A parasitic antenna is further provided on the protection component, the parasitic antenna being connected to the conductive structure, the parasitic antenna being spaced apart from the antenna structure of the electronic device, and the high-resistance structure being provided on the parasitic antenna; The high-resistance structure, the parasitic antenna, the conductive structure, and the electronic device jointly form the electrostatic discharge path.

4. The electronic device component according to claim 2, characterized in that An extension structure is further provided on the protection component, the extension structure being connected to the conductive structure, the extension structure being spaced apart from the feeding portion of the antenna structure of the electronic device, and the high-resistance structure being provided on the extension structure; The high-resistance structure, the extension structure, the conductive structure, and the electronic device jointly form the electrostatic discharge path.

5. The electronic device component according to any one of claims 1 to 4, characterized in that The resistance value of the high-resistance structure is 1 to 100 MΩ.

6. The electronic device assembly according to any one of claims 1 to 4, characterized in that The material of the high-resistance structure is at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic.

7. An electronic device, characterized in that, Comprising: A high-resistance structure provided on the outer surface of the electronic device; The high-resistance structure and the body of the electronic device jointly form an electrostatic discharge path, the electrostatic discharge path being configured to conduct the charge generated by the static power source to the conductor when the electronic device contacts the static power source and the conductor.

8. The electronic device according to claim 7, wherein The electronic device includes a middle frame and a rear cover; The high-resistance structure is provided on the outer surface of at least one of the middle frame and the rear cover.

9. The electronic device according to claim 7, wherein The electronic device is a foldable electronic device, the foldable electronic device including a first housing, a second housing, and a rotating shaft assembly, the first housing and the second housing being rotatably connected through the rotating shaft assembly; The high-resistance structure is provided on the outer surface of at least one of the first housing, the second housing, and the rotating shaft assembly.

10. The electronic device according to claim 7, wherein The electronic device is a wearable device, the wearable device including a watch body and a watch band assembly, the watch band assembly being connected to the watch body; The high-resistance structure is provided on the outer surface of at least one of the watch body and the watch band assembly.

11. The electronic device according to any one of claims 7 to 10, characterized in that, The resistance value of the high-resistance structure is 1 to 100 MΩ.

12. The electronic device according to any one of claims 7 to 10, characterized in that, The material of the high-resistance structure is at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic.

13. A protection component, characterized in that, The protection component includes: A component body for detachably mounting on an electronic device to protect the electronic device; A high-resistance structure, the high-resistance structure is disposed on the component body, and the high-resistance structure is configured to conduct the charge generated by the static power source to the conductor when the protection component contacts the static power source and the conductor; The resistance value of the high-resistance structure is 0.5 to 1 MΩ.

14. The protection component according to claim 13, characterized in that, The material of the high-resistance structure is at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic.

15. A protection component, characterized in that, The protection component includes: A component body for detachably mounting on an electronic device to protect the electronic device; A touch structure disposed on the component body; A discharge structure disposed on the component body; A high-resistance structure connected between the touch structure and the discharge structure, and the high-resistance structure is configured to conduct the charge generated by the static power source to the discharge structure when the touch structure contacts the static power source.

16. The protection component according to claim 15, wherein The resistance value of the high-resistance structure is 1 to 100 MΩ.

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