Electronic device assembly, protective assembly, and electronic device

Abstract

This application provides an electronic device assembly, a protective assembly, and an electronic device. The electronic device assembly includes an electronic device and a protective assembly. The protective assembly is detachably mounted on the electronic device and has a high-resistance structure. The high-resistance structure is spaced apart from the electronic device and together with the electronic device forms an electrostatic discharge path. The electrostatic discharge path is configured to conduct the charge generated by the electrostatic source to the conductor when the electronic device assembly comes into contact with an electrostatic source and a conductor. Therefore, the electronic device assembly, protective assembly, and electronic device provided by this application can reduce the adverse effects of electrostatic current on electrostatic bodies.

Description

Technical Field

[0001] This application relates to the field of static electricity elimination, and more specifically, to an electronic device component, a protective component, and an electronic device. Background Technology

[0002] When an electrostatic source carries static electricity, its high voltage can cause a large electrostatic current to be generated between it and a conductor with low resistance if the source comes into contact with the conductor. This could potentially damage the source. For example, if the source is a human body, the large electrostatic current can cause a stinging sensation or even endanger human safety. Summary of the Invention

[0003] In view of the above problems, this application provides an electronic device component, a protection component, and an electronic device.

[0004] Firstly, this application provides an electronic device assembly, including an electronic device and a protective component. The protective component is detachably mounted on the electronic device. The protective component has a high-resistance structure, which is spaced apart from the electronic device and together with the electronic device forms an electrostatic discharge path. This electrostatic discharge path is configured to conduct the charge generated by the electrostatic source to the conductor when the electronic device assembly comes into contact with an electrostatic source and a conductor. This application, by having the protective component and the electronic device jointly form an electrostatic discharge path between the electrostatic source and the conductor, can quickly discharge the static charge carried by the electrostatic source to the conductor, reducing the harmful effects of static electricity on the electrostatic source. Furthermore, the high-resistance structure on the protective component is equivalent to setting a high-resistance resistor in the electrostatic discharge path, which can effectively reduce the electrostatic current formed during static charge discharge, thereby reducing the adverse effects of the electrostatic current on the electrostatic conductor.

[0005] In one possible implementation, the protection component also includes a conductive structure, spaced apart from the electronic device, with a high-resistance structure disposed on the conductive structure. The high-resistance structure, the conductive structure, and the electronic device together form an electrostatic discharge path. By providing a conductive structure on the protection component, this application makes it easier to form a discharge gap between the protection component and the electronic device, thereby facilitating the transfer of static charge to the electronic device, allowing the protection component and the electronic device to work together to form an electrostatic discharge path.

[0006] In one possible implementation, a parasitic antenna is also provided on the protection component. The parasitic antenna is connected to a conductive structure and is spaced apart from the antenna structure of the electronic device. A high-impedance structure is disposed on the parasitic antenna. The high-impedance structure, parasitic antenna, conductive structure, and electronic device together form an electrostatic discharge path. By providing a parasitic antenna, this application can enhance the antenna performance of the electronic device's antenna structure and also connect it to the conductive structure to form an electrostatic discharge path.

[0007] In one possible implementation, the protection component further includes an extension structure connected to the conductive structure. The parasitic antenna and the feed portion of the antenna structure of the electronic device are spaced apart, and a high-impedance structure is disposed on the extension structure. The high-impedance structure, extension structure, conductive structure, and electronic device together form an electrostatic discharge path. By incorporating the extension structure, this application facilitates the formation of a discharge gap between the protection component and the electronic device, thereby making it easier for static charges to transfer to the electronic device, allowing the protection component and electronic device to cooperate in forming an electrostatic discharge path.

[0008] In one possible implementation, the resistance of the high-resistance structure is 1 to 100 MΩ.

[0009] In one possible implementation, the material of the high-resistivity structure is at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic.

[0010] Secondly, this application provides an electronic device including a high-resistance structure. The high-resistance structure is disposed on the outer surface of the electronic device. The high-resistance structure and the body of the electronic device together form an electrostatic discharge path. The electrostatic discharge path is configured to conduct the charge generated by the electrostatic power source to the conductor when the electronic device comes into contact with an electrostatic power source and a conductor. This application forms an electrostatic discharge path between the electrostatic power source and the conductor through the outer surface of the electronic device and the high-resistance structure, thereby quickly discharging the electrostatic charge carried by the electrostatic power source to the conductor and reducing the harm of static electricity to the electrostatic power source. In addition, the high-resistance structure on the outer surface is equivalent to setting a high-resistance resistor in the electrostatic discharge path, which can effectively reduce the electrostatic current formed during the discharge of electrostatic charge, thereby reducing the adverse effects of electrostatic current on the electrostatic conductor.

[0011] In one possible implementation, the electronic device includes a mid-frame and a back cover. A high-resistivity structure is disposed on the outer surface of at least one of the mid-frame and the back cover.

[0012] In one possible implementation, the electronic device is a foldable electronic device, which includes a first housing, a second housing, and a hinge assembly, with the first housing and the second housing rotatably connected via the hinge assembly. A high-resistance structure is disposed on the outer surface of at least one of the first housing, the second housing, and the hinge assembly.

[0013] In one possible implementation, the electronic device is a wearable device, which includes a watch body and a watch band assembly connected to the watch body. A high-resistance structure is disposed on the outer surface of at least one of the watch body and the watch band assembly.

[0014] In one possible implementation, the resistance of the high-resistance structure is 1 to 100 MΩ.

[0015] In one possible implementation, the material of the high-resistivity structure is at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic.

[0016] Thirdly, this application provides a protection component, comprising a body and a high-resistance structure. The body is detachably mounted on an electronic device to protect it. The high-resistance structure is disposed on the component body and configured to conduct the charge generated by the static power source to the conductor when the protection component comes into contact with a static power source and a conductor. The resistance of the high-resistance structure is 0.5–1 MΩ. By providing a high-resistance structure on the body of the protection component, this application enables the protection component to act as an electrostatic discharge path between the static power source and the conductor, thereby rapidly discharging the static charge carried by the static power source to the conductor and reducing the harm of static electricity to the static power source. Simultaneously, the high-resistance structure has a relatively high resistance but is less than the resistance of an insulator, thereby improving the conduction efficiency of static charge and effectively reducing the electrostatic current formed during static charge discharge, thus reducing the adverse effects of electrostatic current on the electrostatic conductor.

[0017] In one possible implementation, the material of the high-resistivity structure is at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic.

[0018] Fourthly, this application provides a protection component, which includes a component body, a contact structure, a discharge structure, and a high-resistance structure. The component body is detachably mounted on an electronic device to protect the electronic device. The contact structure is disposed on the component body. The discharge structure is disposed on the component body. The high-resistance structure is connected between the contact structure and the discharge structure, and the high-resistance structure is configured to conduct the charge generated by the static power source to the discharge structure when the contact structure comes into contact with the static power source.

[0019] In one possible implementation, the resistance of the high-resistance structure is 1 to 100 MΩ.

[0020] Therefore, the electronic device components, protection components, and electronic devices provided in this application can achieve electrostatic discharge by forming an electrostatic discharge path between the electrostatic source and the conductor, thereby allowing the static charge carried by the electrostatic source to discharge and transfer to the conductor through the electrostatic discharge path. Furthermore, by incorporating a high-resistance structure in the electrostatic discharge path, the electrostatic current can be reduced, thereby mitigating the adverse effects of the electrostatic current on the conductor. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of an electrostatic discharge path provided in an embodiment of this application.

[0022] Figure 2 This is a schematic diagram illustrating an application scenario of an electronic device component provided in an embodiment of this application.

[0023] Figure 3 This is a schematic diagram illustrating an application scenario of an electronic device provided in an embodiment of this application.

[0024] Figure 4 This is a schematic diagram illustrating an application scenario of the protection component provided in one embodiment of this application.

[0025] Figure 5 This is a schematic diagram of a protection component provided in an embodiment of this application.

[0026] Figure 6 This is a schematic diagram of a foldable electronic device provided in an embodiment of this application.

[0027] Figure 7 This is a schematic diagram of a wearable device provided in an embodiment of this application.

[0028] Figure 8 This is a schematic diagram of an electronic device provided in an embodiment of this application.

[0029] Figure 9 for Figure 8 A schematic diagram of the return loss of the antenna structure of an electronic device.

[0030] Figure 10 This is a schematic diagram of an electronic device component provided in an embodiment of this application.

[0031] Figure 11 This is a schematic diagram of an electronic device component provided in an embodiment of this application.

[0032] Figure 12 This is a schematic diagram of an electronic device component provided in an embodiment of this application.

[0033] Figure 13 for Figure 12 A schematic diagram of the return loss of the antenna structure of an electronic device.

[0034] Figure 14 This is a schematic diagram of an electronic device component provided in an embodiment of this application.

[0035] Figure 15 for Figure 14 A schematic diagram of the return loss of the antenna structure of an electronic device. Detailed Implementation

[0036] The technical solutions in the embodiments of this application will be clearly described below with reference to the accompanying drawings.

[0037] It is understood that the connection relationships described in this application refer to direct or indirect connections. For example, the connection between A and B can be a direct connection between A and B, or an indirect connection between A and B through one or more other electrical components. For example, A can be directly connected to C, and C can be directly connected to B, thus achieving a connection between A and B through C. It is also understood that the "A connects to B" described in this application can be a direct connection between A and B, or an indirect connection between A and B through one or more other electrical components.

[0038] In the description of this application, unless otherwise stated, " / " means "or". For example, A / B can mean A or B. The "and / or" in this document is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A exists alone, A and B exist simultaneously, and B exists alone.

[0039] In the description of this application, the words "first," "second," etc., are used only to distinguish different objects and do not limit the quantity or order of execution, nor do they imply that they must be different. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0040] Please see Figure 1 , Figure 1 This is a schematic diagram of an electrostatic discharge path 11 provided in an embodiment of this application.

[0041] in, Figure 1 Figure (a) is a schematic diagram of the electrostatic discharge path 11 from the static power source 10 to the conductor 12.

[0042] The static charge source 10 is an object or human body that generates and accumulates static charge. For example, when the environment is relatively dry, the resistivity of the human skin is high and the rate of charge dissipation is slow. Therefore, when the human body rubs against or separates from other substances with high resistivity and slow charge dissipation, such as when a person takes off a sweater or stands up from a seat, a large amount of static charge will be generated. Furthermore, because the environment is relatively dry, the air resistivity is high, making it difficult for the static charge on the human body to be conducted and transferred through the dry air, thus causing a large amount of static charge to accumulate on the human body. Here, this application uses the human body as an example to illustrate the static charge source 10, but this application does not limit the type of static charge source 10.

[0043] The conductor 12 is an object with low resistivity that readily conducts charge or current. For example, the conductor 12 can be a metal, graphite, electrolyte solution, conductive polymer material, carbon fiber, etc. Here, this application uses a metal as an example of conductor 12, but this application does not limit the type of conductor 12.

[0044] The electrostatic discharge path 11 is the path for the flow, transfer, and conduction of static charge between the static power source 10 and the conductor 1. That is, the electrostatic discharge path 11 is configured to conduct the charge generated by the static power source 10 to the conductor 12. Specifically, when the static power source 10 comes into contact with the conductor 12 through the electrostatic discharge path 11, the static charge accumulated in the static power source 10 flows, transfers, and is conducted to the conductor 12 through the electrostatic discharge path 11, thereby reducing the static charge accumulated in the static power source 10 and lowering the electrostatic voltage on the static power source 10. Here, this application uses an electronic device component or protection component forming the electrostatic discharge path 11 as an example for explanation, but this application does not limit the specific implementation or formation method of the electrostatic discharge path 11.

[0045] For example, such as Figure 1 As shown in Figure (b), when the static power source 10 is a human body and the conductor 12 is a metal, if the human body comes into contact with the metal through an electronic device, for example, when the human body holds the electronic device and touches the metal, the electronic device can form an electrostatic discharge path 11. That is, the electrostatic discharge path 11 is configured to conduct the charge generated by the static power source 10 to the conductor 12 when the electronic device comes into contact with the static power source 10 and the conductor 12.

[0046] To reduce the electrostatic current in the electrostatic discharge path 11, thereby reducing the stinging sensation and harm caused by electrostatic current to the human body, the electronic device is equipped with a high-resistance structure. This high-resistance structure has a relatively large impedance and is also part of the electrostatic discharge path 11. Thus, the electrostatic current will flow through the high-resistance structure, thereby reducing the electrostatic current. At this point, the human body can be considered equivalent to a capacitor C1, the air gap between the human body and the electronic device can be considered equivalent to a discharge gap, the structure with lower impedance on the electronic device can be considered equivalent to a low-resistance resistor R1, the high-resistance structure can be considered equivalent to a high-resistance resistor Rh, and the conductor 12 can be considered equivalent to grounding. Therefore, the discharge gap, the low-resistance resistor R1, and the high-resistance resistor Rh work together to form the electrostatic discharge path 11.

[0047] Please see Figure 2 , Figure 2 This is a schematic diagram illustrating an application scenario of an electronic device component 11a provided in an embodiment of this application.

[0048] Here, the static power source 10 is the human body, the conductor 12 is the metal door, and the electronic device assembly 11a forms the electrostatic discharge path 11. That is, the electrostatic discharge path 11 is configured to conduct the charge generated by the static power source 10 to the conductor 12 when the electronic device assembly 11a comes into contact with the static power source 10 and the conductor 12.

[0049] Specifically, when a human body holds the electronic device component 11a and the electronic device component 11a touches the metal door, the static charge carried by the human body will be discharged, released, and transferred to the metal door through the electronic device component 11a.

[0050] The electronic device assembly 11a includes an electronic device and a protective assembly. The protective assembly is detachably mounted on the electronic device. The protective assembly and / or the electronic device are provided with a high-resistance structure. The high-resistance structure has a high impedance and is also part of the electrostatic discharge path 11. Thus, the electrostatic current will flow through the high-resistance structure, thereby reducing the electrostatic current, decreasing the stinging sensation caused by the electrostatic current to the human body, and reducing the safety risks posed by the electrostatic current to the human body.

[0051] Please see Figure 3 , Figure 3 This is a schematic diagram illustrating an application scenario of the electronic device 11b provided in an embodiment of this application.

[0052] Here, the static power source 10 is the human body, the conductor 12 is the metal door, and the electronic device 11b forms the electrostatic discharge path 11. That is, the electrostatic discharge path 11 is configured to conduct the charge generated by the static power source 10 to the conductor 12 when the electronic device 11b comes into contact with the static power source 10 and the conductor 12.

[0053] Specifically, when a human body holds an electronic device 11b and the electronic device 11b touches a metal door, the static charge carried by the human body will be discharged, released, and transferred to the metal door through the electronic device 11b.

[0054] The outer surface of the electronic device 11b is provided with a high-resistance structure. The high-resistance structure has a large impedance and is also part of the electrostatic discharge path 11. That is, the high-resistance structure and the body of the electronic device together form the electrostatic discharge path 11. In this way, the electrostatic current will flow through the high-resistance structure, thereby reducing the electrostatic current, reducing the stinging sensation caused by the electrostatic current to the human body, and reducing the safety risks of the electrostatic current to the human body.

[0055] Please see Figure 4 and Figure 5 , Figure 4 This is a schematic diagram illustrating an application scenario of the protection component 11c provided in one embodiment of this application. Figure 5 This is a schematic diagram of a protection component 11c provided in an embodiment of this application.

[0056] The protection component 11c includes a component body. The component body is designed for detachable mounting on an electronic device to protect the electronic device. The component body is provided with a touch structure 11c_1, a discharge structure 11c_2, and a high-resistance structure 11c_3.

[0057] A high-resistance structure 11c_3 is connected between the touch structure 11c_1 and the discharge structure 11c_2. The touch structure 11c_1 is configured to contact the static power source 10. Here, the static power source 10 is the human body. The discharge structure 11c_2 is a conductor 12. The high-resistance structure 11c_3 forms an electrostatic discharge path 11. That is, the high-resistance structure 11c_3 is configured to conduct the charge generated by the static power source 10 to the discharge structure 11c_2 when the touch structure 11c_1 contacts the static power source 10.

[0058] Specifically, when a human body touches the touch structure 11c_1 on the protective component 11c, the static charge carried by the human body will be discharged, dissipated, and transferred to the discharge structure 11c_2 through the touch structure 11c_1 and the high-resistance structure 11c_3. Since the high-resistance structure 11c_3 has a large impedance and is also part of the electrostatic discharge path 11, the electrostatic current will flow through the high-resistance structure 11c_3, thereby reducing the electrostatic current, reducing the stinging sensation caused by the electrostatic current to the human body, and reducing the safety risks of the electrostatic current to the human body.

[0059] In some embodiments, the touch structure 11c_1, the discharge structure 11c_2, and the high-resistance structure 11c_3 may all be disposed on one side of the component body, or the touch structure 11c_1, the discharge structure 11c_2, and the high-resistance structure 11c_3 may be disposed on different surfaces of the component body. This application does not limit the placement of the touch structure 11c_1, the discharge structure 11c_2, and the high-resistance structure 11c_3.

[0060] Please see Figure 6 , Figure 6 This is a schematic diagram of a foldable electronic device 111b provided in an embodiment of this application.

[0061] Here, the electronic device 11b is a foldable electronic device 111b. The foldable electronic device 111b includes a first housing 111b_1, a second housing 111b_2, and a hinge assembly 111b_3. The first housing 111b_1 and the second housing 111b_2 are rotatably connected via the hinge assembly 111b_3. In different usage states, the user can rotate the first housing 111b_1 and the second housing 111b_2 relative to each other around the hinge assembly 111b_3 to achieve different usage states of the foldable electronic device 111b: an unfolded state and a folded state.

[0062] In some embodiments, the outer surfaces of the pivot assembly 111b_3, the first housing 111b_1, and the second housing 111b_2 may be made of a high-resistivity material, such that the outer surface resistance of at least one of the pivot assembly 111b_3, the first housing 111b_1, and the second housing 111b_2 is 1 to 100 MΩ, thereby forming a high-resistivity structure.

[0063] In other embodiments, a high-resistance structure may be provided on the outer surface of at least one of the pivot assembly 111b_3, the first housing 111b_1, and the second housing 111b_2. The resistance value of the high-resistance structure is 1~100MΩ.

[0064] Thus, when a person holds the foldable electronic device 111b and touches the aforementioned high-resistance structure, since the foldable electronic device 111b also touches the conductor 12, the static charge carried by the person will be discharged, released, and transferred to the conductor 12 through the high-resistance structure on the foldable electronic device 111b. Furthermore, because the high-resistance structure has a high impedance and is also part of the electrostatic discharge path 11, the electrostatic current will flow through the high-resistance structure, thereby reducing the electrostatic current, decreasing the stinging sensation caused by the electrostatic current to the human body, and reducing the safety risks posed by the electrostatic current to the human body.

[0065] Please see Figure 7 , Figure 7 This is a schematic diagram of a wearable device 112b provided in an embodiment of this application.

[0066] Here, electronic device 11b is wearable device 112b. Wearable device 112b can be a smartwatch, smart bracelet, etc. Wearable device 112b includes a watch body 112b_1 and a watch band assembly 112b_2. The watch body 112b_1 and the watch band assembly 112b_2 are connected. Wearable device 112b can be worn on the user's wrist via watch band assembly 112b_2.

[0067] In some embodiments, the outer surface and other areas of at least one of the strap assembly 112b_2 and the watch body 112b_1 may be made of a high-resistivity material, such that the outer surface resistance of at least one of the strap assembly 112b_2 and the watch body 112b_1 is 1~100MΩ, so as to form a high-resistivity structure.

[0068] In other embodiments, a high-resistance structure may be provided on the outer surface of at least one of the strap assembly 112b_2 and the watch body 112b_1. The resistance value of the high-resistance structure is 1~100MΩ.

[0069] Thus, when a person wears the wearable device 112b and touches the conductor 12, the static charge carried by the person will be discharged, released, and transferred to the conductor 12 through the high-resistance structure on the wearable device 112b. Furthermore, because the high-resistance structure has a high impedance and is also part of the electrostatic discharge path 11, the electrostatic current will flow through the high-resistance structure, thereby reducing the electrostatic current, decreasing the stinging sensation caused by the electrostatic current, and reducing the safety risks posed by the electrostatic current to the human body.

[0070] Please see Figure 8 , Figure 8 A schematic diagram of an electronic device 113b is provided for one embodiment of this application.

[0071] Here, electronic device 113b refers to mobile phones, tablets, personal digital assistants (PDAs), laptops, in-vehicle devices, Internet of Things (IoT) devices, etc.

[0072] Electronic device 113b includes antenna structure 113b_1. Antenna structure 113b_1 includes a metal frame 113b_2, a feed section 113b_3, and an antenna body 113b_4. At least one slot is formed in the metal frame 113b_2, dividing it into at least two radiating sections. Each radiating section is connected to the antenna body 113b_4 via at least one feed section 113b_3. The antenna body 113b_4 feeds current to the corresponding radiating section through the feed section 113b_3, thereby exciting a corresponding wireless mode, such as GPS mode, WiFi 2.4GHz mode, WiFi 5GHz mode, etc.

[0073] A high-resistance structure 113b_5 is provided on the metal frame 113b_2. Here, the high-resistance structure 113b_5 is a high-resistance structure on the electronic device 113b. The high-resistance structure has a large impedance and is also part of the electrostatic discharge path 11. Therefore, when both the electrostatic power source 10 and the conductor 12 are in contact with the high-resistance structure 113b_5 of the electronic device 113b, the electrostatic discharge path 11 includes the high-resistance structure 113b_5 and the antenna structure 113b_1.

[0074] Specifically, as shown in path P1, when the static charge 10 is human body A and the conductor 12 is metal door B, human body A touches the high-resistivity structure 113b_5, and the static charge carried by human body A will be transferred to the high-resistivity structure 113b_5. Since the high-resistivity structure 113b_5 is located on the metal frame 113b_2, the static charge will be transferred from the high-resistivity structure 113b_5 to one end of the metal frame 113b_2. Since the metal frame 113b_2 is connected to the antenna body 113b_4 through the feed section 113b_3, the static charge will be transferred from the metal frame 113b_2 to the antenna body 113b_4. Similarly, the static charge will continue to be transferred from the antenna body 113b_4 to the other end of the metal frame 113b_2, and from the other end of the metal frame 113b_2 to the high-resistivity structure 113b_5, and then from the high-resistivity structure 113b_5 to the metal door B, thus completing the electrostatic discharge.

[0075] In some embodiments, the high-resistivity structure 113b_5 can also be disposed on other outer surfaces of the electronic device 113b, requiring only that the static power supply 10 contacts the high-resistivity structure 113b_5. For example, the high-resistivity structure 113b_5 can also be disposed on the middle frame, back cover, or other structures of the electronic device 113b. This application does not limit the specific placement location of the high-resistivity structure 113b_5.

[0076] In some embodiments, the high-resistivity structure 113b_5 can be made of at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic. The thickness of the high-resistivity structure 113b_5 can be 0.1 mm. The resistivity of the high-resistivity structure 113b_5 is 100 MΩ·m to 10000 MΩ·m. The total impedance of the high-resistivity structure 113b_5 is 1 MΩ to 100 MΩ.

[0077] Please see Figure 9 , Figure 9 for Figure 8 A schematic diagram of the return loss of the antenna structure of the electronic device 113b.

[0078] in, Figure 9 Figure (a) is a schematic diagram of the return loss of antenna structure 113b_1 when the high-impedance structure 113b_5 is not set on the metal frame 113b_2. Figure 9Figure (b) shows the return loss of antenna structure 113b_1 when a high-impedance structure 113b_5 is provided on the metal frame 113b_2. As shown in the figure, when the high-impedance structure 113b_5 is not provided on the metal frame 113b_2, the resonant frequency of antenna structure 113b_1 is approximately 2.2 GHz. When the high-impedance structure 113b_5 is provided on the metal frame 113b_2, the resonant frequency of antenna structure 113b_1 is approximately 2.19 GHz. That is, the setting of the high-impedance structure 113b_5 has a negligible impact on the resonant frequency of antenna structure 113b_1. Setting the high-impedance structure 113b_5 on the metal frame 113b_2 has virtually no impact on the radiation performance of antenna structure 113b_1.

[0079] Please see Figure 10 , Figure 10 This is a schematic diagram of an electronic device component 111a provided in an embodiment of this application.

[0080] in, Figure 10 Figure (a) is a front view of electronic device component 111a. Figure 10 Figure (b) is a rear view of electronic device component 111a. (As shown in the image) Figure 10 Figure (a) in the middle and Figure 10 As shown in Figure (b), the electronic device assembly 111a includes an electronic device 111a_1 and a protective assembly 111a_2. The protective assembly 111a_2 is detachably mounted on the electronic device 111a_1. The protective assembly 111a_2 is provided with a conductive structure 111a_3, a high-resistivity structure 111a_5, and a parasitic antenna 111a_4. At least a portion of the conductive structure 111a_3 is provided with the high-resistivity structure 111a_5. The conductive structure 111a_3 is generally disposed on the side of the protective assembly 111a_2 facing away from the electronic device 111a_1. This side facing away from the electronic device 111a_1 is the outer surface of the protective assembly 111a_2. A discharge gap is formed between the conductive structure 111a_3 and the electronic device 111a_1. Here, the discharge gap is the air between the conductive structure 111a_3 and the electronic device 111a_1.

[0081] In some embodiments, the conductive structure 111a_3 further extends to the side of the protective component 111a_2 and the side adjacent to the electronic device 111a_1. The side adjacent to the electronic device 111a_1 is the inner surface of the protective component 111a_2. The side of the protective component 111a_2 is a side surface connecting the outer surface and the inner surface. Thus, the spacing between the conductive structure 111a_3 and the electronic device 111a_1 is smaller, making it easier to form a discharge gap between them.

[0082] In some embodiments, the conductive structure 111a_3 can also be disposed at other locations on the protective component 111a_2, as long as a discharge gap is formed between the conductive structure 111a_3 and the electronic device 111a_1. This application does not limit the location of the conductive structure 111a_3. The parasitic antenna 111a_4 is disposed on the outer surface of the protective component 111a_2 and connected to the conductive structure 111a_3. The parasitic antenna 111a_4 includes one or more metal stubs. The parasitic antenna 111a_4 is disposed at intervals corresponding to the antenna structure of the electronic device 111a_1. Thus, the parasitic antenna 111a_4 can couple with the antenna structure of the electronic device 111a_1, thereby enhancing the radiation performance of the antenna structure of the electronic device 111a_1.

[0083] A high-impedance structure 111a_5 is provided on the parasitic antenna 111a_4. The high-impedance structure 111a_5 has a relatively high impedance and is also part of the electrostatic discharge path 11. Therefore, when both the electrostatic power source 10 and the conductor 12 are in contact with the high-impedance structure 111a_5 of the electronic device assembly 111a, the electrostatic discharge path 11 includes the high-impedance structure 111a_5, the parasitic antenna 111a_4, and the antenna structure of the electronic device 111a_1. That is, the high-impedance structure 111a_5, the conductive structure 111a_3, and the electronic device 111a_1 together form the electrostatic discharge path 11.

[0084] Specifically, such as Figure 10 As shown by path P2 in diagram (c), when the static power source 10 is human body A and the conductor 12 is metal door B, the static charge carried by human body A will be transferred to the high-resistivity structure 111a_5. Since the high-resistivity structure 111a_5 is located on the parasitic antenna 111a_4, the static charge will be transferred from the high-resistivity structure 111a_5 to the parasitic antenna 111a_4 on the protection component 111a_2. Since the parasitic antenna 111a_4 is connected to the conductive structure 111a_3, the static charge will be transferred from the parasitic antenna 111a_4 to the conductive structure 111a_3. Because a discharge gap is formed between conductive structure 111a_3 and electronic device 111a_1, when conductive structures 111a_3 and 112a_3 carry static charge, the voltage of conductive structure 111a_3 is extremely high. This causes the air between conductive structure 111a_3 and electronic device 111a_1 to break down, allowing the static charge on conductive structure 111a_3 to be conducted to electronic device 111a_1. Similarly, the static charge continues to transfer from electronic device 111a_1 to conductive structure 111a_3, then from conductive structure 111a_3 to parasitic antenna 111a_4, then from parasitic antenna 111a_4 to high-resistivity structure 111a_5, and finally to metal gate B, thus completing the electrostatic discharge.

[0085] In some embodiments, the conductive structure 111a_3 and the parasitic antenna 111a_4 can be metals. The high-resistivity structure 111a_5 can be made of at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic. The resistivity of the high-resistivity structure 111a_5 is 100 MΩ·m to 10000 MΩ·m, and is greater than the resistivity of the conductive structure 111a_3. The total impedance of the high-resistivity structure 111a_5 is 1 MΩ to 100 MΩ.

[0086] Please see Figure 11 , Figure 11 This is a schematic diagram of an electronic device component 112a provided in an embodiment of this application.

[0087] in, Figure 11 Figure (a) is a front view of electronic device component 112a. Figure 11 Figure (b) is a rear view of electronic device component 112a.

[0088] Figure 11 Electronic device component 112a and Figure 10 The difference between the electronic device component 111a and the other component is that... Figure 11 The electronic device component 112a includes a conductive structure 112a_3, a high-resistivity structure 112a_5, and an extension structure 112a_4. The extension structure 112a_4 is disposed on the outer surface of the protective component 112a_2 and connected to the conductive structure 112a_3. The extension structure 112a_4 is spaced apart from the antenna structure of the electronic device 112a_1. Specifically, the extension structure 112a_4 is spaced apart from the feed portion of the antenna structure. For example, the extension structure 112a_4 may correspond to... Figure 8 The feed inlet 113b_3 is positioned at intervals. In this way, the extension structure 112a_4 is positioned close to the antenna structure 113b_1 and the metal frame 113b_2, which makes it easier to form a discharge gap between the conductive structure 112a_3 and the electronic device 112a_1, thereby improving the efficiency of static charge transfer.

[0089] A high-resistance structure 112a_5 is disposed on the extension structure 112a_4. The high-resistance structure 112a_5 has a relatively high impedance and is also part of the electrostatic discharge path 11. Therefore, when both the electrostatic power source 10 and the conductor 12 are in contact with the high-resistance structure 112a_5 of the electronic device assembly 112a, the electrostatic discharge path 11 includes the high-resistance structure 112a_5, the extension structure 112a_4, and the antenna structure of the electronic device 112a_1. That is, the high-resistance structure 112a_5, the extension structure 112a_4, and the electronic device 112a_1 together form the electrostatic discharge path 11.

[0090] Specifically, such as Figure 11As shown in path P3 of diagram (c), when the static power source 10 is human body A and the conductor 12 is metal door B, human body A touches the high-resistivity structure 112a_5, and the static charge carried by human body A will be transferred to the high-resistivity structure 112a_5. Since the high-resistivity structure 112a_5 is located on the extension structure 112a_4, the static charge will be transferred from the high-resistivity structure 112a_5 to the extension structure 112a_4 on the protection component 112a_2. Since the extension structure 112a_4 and the antenna structure of the electronic device 112a_1 are correspondingly spaced, a discharge gap is formed between the extension structure 112a_4 and the antenna structure of the electronic device 112a_1. Here, the discharge gap is the air between the extension structure 112a_4 and the electronic device 112a_1. When the extension structure 112a_4 carries static charge, its voltage is extremely high. This causes the air between the extension structure 112a_4 and the electronic device 112a_1 to break down, allowing the static charge on the extension structure 112a_4 to be conducted to the electronic device 112a_1. Similarly, the static charge continues to transfer from the electronic device 112a_1 to the extension structure 112a_4, then from the extension structure 112a_4 to the high-resistivity structure 112a_5, and finally to the metal gate B, thus completing the electrostatic discharge.

[0091] Please see Figure 12 , Figure 12 This is a schematic diagram of an electronic device component 113a provided in an embodiment of this application. Wherein, Figure 12 Figure (a) is a rear view of electronic device component 113a.

[0092] Figure 12 Electronic device component 113a and Figure 10 The difference in electronic device component 112a is that, Figure 12 The electronic device component 113a includes a high-resistivity structure 113a_5 with a resistivity of 100 Ω·m. The total impedance of the high-resistivity structure 113a_5 is 0.5 MΩ to 1 MΩ. The high-resistivity structure 113a_5 is disposed on the outer surface of the protective component 113a_2. Thus, since the resistance of the high-resistivity structure 113a_5 is smaller than that of the insulator, the conduction efficiency of static charge can be improved. Since the high-resistivity structure 113a_5 is also part of the electrostatic discharge path 11, when both the static power source 10 and the conductor 12 are in contact with the high-resistivity structure 113a_5 of the electronic device component 113a, the electrostatic discharge path 11 includes the high-resistivity structure 113a_5 and the antenna structure of the electronic device 113a_1. That is, the high-resistivity structure 113a_5 and the electronic device 113a_1 together form the electrostatic discharge path 11.

[0093] Specifically, such as Figure 12As shown in path P4 of diagram (b), when the static power source 10 is human body A and the conductor 12 is metal door B, human body A touches the high-resistance structure 113a_5, and the static charge carried by human body A will be transferred to the high-resistance structure 113a_5. Since a discharge gap is formed between the high-resistance structure 113a_5 and the electronic device 113a_1, when the high-resistance structure 113a_5 carries static charge, the voltage of the high-resistance structure 113a_5 is extremely high, so the air between the high-resistance structure 113a_5 and the electronic device 113a_1 will be broken down, and the static charge on the high-resistance structure 113a_5 will be conducted to the electronic device 113a_1. Similarly, the static charge will continue to be transferred from the electronic device 113a_1 to the high-resistance structure 113a_5, and then from the high-resistance structure 113a_5 to the metal door B, thus completing the electrostatic discharge.

[0094] In some embodiments, a discharge gap may not be formed between the high-resistivity structure 113a_5 and the electronic device 113a_1. Therefore, when the static power source 10 is a human body A and the conductor 12 is a metal door B, when human body A touches the high-resistivity structure 113a_5, the static charge carried by human body A will be transferred to the high-resistivity structure 113a_5. The static charge will then continue to be transferred from the high-resistivity structure 113a_5 to the metal door B, thus completing the electrostatic discharge. That is, the static charge will not be transferred from the high-resistivity structure 113a_5 to the electronic device 113a_1, but will be directly conducted to the metal door B.

[0095] Please see Figure 13 , Figure 13 for Figure 12 A schematic diagram of the return loss of the antenna structure of the electronic device 113a_1.

[0096] Figure 13 Figure (a) is a schematic diagram of the return loss of the antenna structure when the high-impedance structure 113a_5 is not set on the protection component 113a_2. Figure 13 Figure (b) shows a schematic diagram of the return loss of the antenna structure when the high-impedance structure 113a_5 is provided on the protection component 113a_2. As shown in the figure, when the high-impedance structure 113a_5 is not provided on the protection component 113a_2, the resonant frequency of the antenna structure is approximately 2.2 GHz; when the high-impedance structure 113a_5 is provided on the protection component 113a_2, the resonant frequency of the antenna structure is approximately 2.19 GHz. That is, the setting of the high-impedance structure 113a_5 has a very small impact on the resonant frequency of the antenna structure, and setting the high-impedance structure 113a_5 on the protection component 113a_2 will have virtually no impact on the radiation performance of the antenna structure.

[0097] Please see Figure 14 , Figure 14 This is a schematic diagram of an electronic device component 114a provided in an embodiment of this application.

[0098] in, Figure 14 Figure (a) is a rear view of electronic device component 114a.

[0099] Figure 14 Electronic device component 114a and Figure 12 The difference between the electronic device component 113a and the protection component 114a_2 is that the entire protection component 114a_2 is made of a high-resistivity material, that is, the entire protection component 114a_2 constitutes a high-resistivity structure. The resistivity of this high-resistivity structure 1 is 100MΩ·m~10000MΩ·m, and the total impedance of the high-resistivity structure is 1MΩ~100MΩ.

[0100] In some embodiments, the thickness of the protective component 114a_2 is 0.5 mm. That is, the thickness of the high-resistivity structure is 0.5 mm.

[0101] Thus, since the entire protective component 114a_2 is a high-resistivity structure, its placement close to and spaced from the electronic device 114a_1 facilitates the formation of a discharge gap, improving the efficiency of static charge transfer. Because the high-resistivity structure is also part of the electrostatic discharge path 11, when both the static power source 10 and the conductor 12 are in contact with the electronic device component 114a, the electrostatic discharge path 11 includes both the high-resistivity structure and the antenna structure of the electronic device 114a_1. In other words, the protective component 114a_2 and the electronic device 114a_1 together form the electrostatic discharge path 11.

[0102] Specifically, such as Figure 14 As shown in path P5 of diagram (b), when the static power source 10 is human body A and the conductor 12 is the metal door, when human body A touches the protective component 114a_2, since the protective component 114a_2 is made entirely of a high-resistivity structure, the static charge carried by human body A will be transferred to the high-resistivity structure. Because a discharge gap is formed between the high-resistivity structure and the electronic device 114a_1, when the high-resistivity structure carries static charge, its voltage is extremely high. This causes the air between the high-resistivity structure and the electronic device 114a_1 to be broken down, thus the static charge on the high-resistivity structure will be conducted to the electronic device 114a_1. Similarly, the static charge will continue to be transferred from the electronic device 114a_1 to the high-resistivity structure, and then from the high-resistivity structure to the metal door B, thus completing the electrostatic discharge.

[0103] Please see Figure 15 , Figure 15 for Figure 14 A schematic diagram of the return loss of the antenna structure of the electronic device 114a_1.

[0104] Figure 15 Figure (a) is a schematic diagram of the return loss of the antenna structure when no high-impedance structure is set on the protection component 114a_2. Figure 15Figure (b) shows a schematic diagram of the return loss of the antenna structure when the entire protective component 114a_2 is made of high-resistivity material. As shown in the figure, when the high-resistivity structure is not provided on the protective component 114a_2, the resonant frequency of the antenna structure is approximately 2.2 GHz. When the entire protective component 114a_2 is made of high-resistivity material, the resonant frequency of the antenna structure is approximately 2.19 GHz. That is, the setting of the high-resistivity structure has a very small impact on the resonant frequency of the antenna structure. If the entire protective component 114a_2 is made of high-resistivity material, it will have virtually no impact on the radiation performance of the antenna structure.

[0105] Therefore, the electronic device components, protection components, and electronic devices provided in this application can achieve electrostatic discharge by forming an electrostatic discharge path between the electrostatic source and the conductor, thereby allowing the static charge carried by the electrostatic source to discharge and transfer to the conductor through the electrostatic discharge path. Furthermore, by incorporating a high-resistance structure in the electrostatic discharge path, the electrostatic current can be reduced, thereby mitigating the adverse effects of the electrostatic current on the conductor.

[0106] Those skilled in the art should recognize that the above embodiments are only used to illustrate this application and are not intended to limit this application. Any appropriate changes and variations made to the above embodiments within the essential spirit and scope of this application fall within the scope of protection claimed in this application.

Claims

1. An electronic device component, characterized in that, include: Electronic devices; A protection component is detachably mounted on the electronic device. The protection component has a first high-resistance structure, which is spaced apart from the electronic device and together with the electronic device forms an electrostatic discharge path. The electrostatic discharge path is configured to conduct the charge generated by the electrostatic power source to the conductor when the electronic device component comes into contact with the electrostatic power source and the conductor.

2. The electronic device assembly as claimed in claim 1, characterized in that, The protective component is also provided with a conductive structure, which is spaced apart from the electronic device, and the first high-resistivity structure is disposed on the conductive structure. The first high-resistivity structure, the conductive structure, and the electronic device together form the electrostatic discharge path.

3. The electronic device assembly as claimed in claim 2, characterized in that, The protection component is also provided with a parasitic antenna, which is connected to the conductive structure. The parasitic antenna is spaced apart from the antenna structure of the electronic device, and the first high-impedance structure is disposed on the parasitic antenna. The first high-resistivity structure, the parasitic antenna, the conductive structure, and the electronic device together form the electrostatic discharge path.

4. The electronic device component as claimed in claim 2, characterized in that, The protection component is further provided with an extension structure, which is connected to the conductive structure. The extension structure is spaced apart from the feed portion of the antenna structure of the electronic device, and the first high-impedance structure is disposed on the extension structure. The first high-resistivity structure, the extended structure, the conductive structure, and the electronic device together form the electrostatic discharge path.

5. The electronic device component as claimed in any one of claims 1 to 4, characterized in that, The resistance of the first high-resistance structure is 1 to 100 MΩ.

6. The electronic device component as claimed in any one of claims 1 to 4, characterized in that, The material of the first high-resistivity structure is at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic.

7. The electronic device component as claimed in any one of claims 1 to 4, characterized in that, The electronic device includes: A second high-resistance structure is disposed on the outer surface of the electronic device; The second high-resistance structure and the body of the electronic device together form an electrostatic discharge path, which is configured to conduct the charge generated by the electrostatic power source to the conductor when the electronic device comes into contact with the electrostatic power source and the conductor.

8. The electronic device assembly as claimed in claim 7, characterized in that, The electronic device includes a mid-frame and a back cover; The second high-resistance structure is disposed on the outer surface of at least one of the middle frame and the back cover.

9. The electronic device assembly as claimed in claim 7, characterized in that, The electronic device is a foldable electronic device, which includes a first housing, a second housing, and a pivot assembly. The first housing and the second housing are rotatably connected through the pivot assembly. The second high-resistance structure is disposed on the outer surface of at least one of the first housing, the second housing, and the rotating shaft assembly.

10. The electronic device assembly as claimed in claim 7, characterized in that, The electronic device is a wearable device, which includes a watch body and a watch strap assembly, the watch strap assembly being connected to the watch body; The second high-resistance structure is disposed on the outer surface of at least one of the watch body and the watch band assembly.

11. The electronic device assembly as claimed in claim 7, characterized in that, The resistance of the second high-resistance structure is 1 to 100 MΩ.

12. The electronic device assembly as claimed in claim 7, characterized in that, The material of the second high-resistivity structure is at least one of barium titanate-bismuth scandium oxide ceramic, hafnium dioxide ceramic, and titanium dioxide ceramic.

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