Electronic device and semiconductor chip thereof

Abstract

The invention provides an electronic device and a semiconductor chip thereof. The electronic device comprises a substrate, a circuit layer and a semiconductor chip. The circuit layer is disposed on the substrate. The semiconductor chip is disposed on the substrate and electrically connected to the circuit layer. The semiconductor chip comprises a semiconductor crystal grain, a filling layer, a first electrode, a second electrode and a reflecting layer. The semiconductor crystal grain comprises a first type semiconductor layer, an active layer and a second type semiconductor layer which are stacked in sequence. The fill layer surrounds the semiconductor die and includes a light conversion material. The first electrode is disposed on the first side of the semiconductor die and electrically connected to the first type semiconductor layer. The second electrode is disposed on the second side of the semiconductor die and electrically connected to the second type semiconductor layer. The second electrode includes a transparent conductive material. The electronic device and the semiconductor chip thereof can improve light conversion efficiency or can improve color purity.

Description

Technical Field

[0001] The present disclosure relates to an electronic device and a semiconductor chip thereof, and particularly to an electronic device and a semiconductor chip thereof that can improve light conversion efficiency or color purity. Background Art

[0002] Electronic devices or spliced electronic devices have been widely used in different fields such as communication, display, automotive, or aviation. With the booming development of electronic devices, electronic devices are developed towards being thinner and lighter, so the requirements for the reliability or quality of electronic devices are higher. Summary of the Invention

[0003] The present disclosure provides an electronic device and a semiconductor chip thereof, which can improve light conversion efficiency or color purity.

[0004] According to an embodiment of the present disclosure, the semiconductor chip includes a semiconductor die, a filling layer, a first electrode, a second electrode, and a reflective layer. The semiconductor die includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence. The filling layer surrounds the semiconductor die and includes a light conversion material. The first electrode is disposed on a first side of the semiconductor die and electrically connected to the first-type semiconductor layer. The second electrode is disposed on a second side of the semiconductor die and electrically connected to the second-type semiconductor layer. The second electrode includes a transparent conductive material.

[0005] According to an embodiment of the present disclosure, the electronic device includes a substrate, a circuit layer, and a semiconductor chip. The circuit layer is disposed on the substrate. The semiconductor chip is disposed on the substrate and electrically connected to the circuit layer. The semiconductor chip includes a semiconductor die, a filling layer, a first electrode, a second electrode, and a reflective layer. The semiconductor die includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence. The filling layer surrounds the semiconductor die and includes a light conversion material. The first electrode is disposed on a first side of the semiconductor die and electrically connected to the first-type semiconductor layer. The second electrode is disposed on a second side of the semiconductor die and electrically connected to the second-type semiconductor layer. The second electrode includes a transparent conductive material. Brief Description of the Drawings

[0006] The drawings are included to further understand the present disclosure, and the drawings are incorporated into this specification and form a part of this specification. The drawings illustrate embodiments of the present disclosure and are used together with the description to explain the principles of the present disclosure.

[0007] Figure 1 A cross-sectional schematic diagram of the semiconductor chip according to the first embodiment of the present disclosure;

[0008] Figure 2 A cross-sectional schematic diagram of the semiconductor chip according to the second embodiment of the present disclosure;

[0009] Figure 3Schematic cross-sectional view of a semiconductor chip according to the third embodiment of the present disclosure;

[0010] Figure 4 Schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure;

[0011] Figure 5 Schematic cross-sectional view of an electronic device according to another embodiment of the present disclosure;

[0012] Figure 6 Application of an electronic device according to another embodiment of the present disclosure.

[0013] Description of reference numerals in the drawings

[0014] 10, 10a, 10b: Electronic devices;

[0015] 100, 100a, 100b: Semiconductor chips;

[0016] 101, 101a: First semiconductor chips;

[0017] 102, 102a: Second semiconductor chips;

[0018] 103: Third semiconductor chip;

[0019] 110: Semiconductor die;

[0020] 110a: First side;

[0021] 110b: Second side;

[0022] 110c, 123: Side surfaces;

[0023] 111: First-type semiconductor layer;

[0024] 112: Active layer;

[0025] 113: Second-type semiconductor layer;

[0026] 120, 120’: Filling layers;

[0027] 121: First surface;

[0028] 122: Second surface;

[0029] 124: Light conversion material;

[0030] 125: Scattering particles;

[0031] 130: First electrode;

[0032] 140: Second electrode;

[0033] 150: Reflective layer;

[0034] 151: The first part;

[0035] 152: The second part;

[0036] 160: The light-shielding electrode;

[0037] 170: The Bragg reflection layer;

[0038] 210, 270: The substrate;

[0039] 220: The circuit layer;

[0040] 221: The insulating layer;

[0041] 222: The conductive layer;

[0042] 2221, 2222: The pads;

[0043] 230: The cell definition layer;

[0044] 231: The partition;

[0045] 240: The underfill layer;

[0046] 250: The adhesive layer;

[0047] 260: The color filter layer;

[0048] 261: The color filter cell;

[0049] 2611: The first color filter cell;

[0050] 2612: The second color filter cell;

[0051] 2613: The third color filter cell;

[0052] 262: The black matrix layer;

[0053] 300: The windshield;

[0054] 400: The driver;

[0055] L: The normal;

[0056] O1: The opening;

[0057] W1, W2, W3: The width;

[0058] X, Z: The direction;

[0059] θ1: The included angle;

[0060] θ2: The incident angle. Detailed implementation manners

[0061] The present disclosure can be understood by referring to the following detailed description and in conjunction with the accompanying drawings. It should be noted that, for the convenience of the reader's understanding and for the simplicity of the drawings, only a part of the electronic device is shown in the multiple drawings of the present disclosure, and the specific elements in the drawings are not drawn to actual scale. In addition, the number and size of each element in the drawings are only for illustration and are not used to limit the scope of the present disclosure.

[0062] In the following specification and claims, words such as "comprising" and "including" are open-ended terms and should therefore be interpreted as meaning "including but not limited to...".

[0063] It should be understood that when an element or a film layer is referred to as being "on" or "connected to" another element or film layer, it can be directly on this other element or film layer or directly connected to this other element or layer, or there are intervening elements or film layers between the two (non-direct case). Conversely, when an element is referred to as being "directly" "on" another element or film layer or "directly connected to" another element or film layer, there are no intervening elements or film layers between the two.

[0064] Although terms such as "first", "second", "third",... can be used to describe various components, the components are not limited to these terms. These terms are only used to distinguish a single component in the specification from other components. The same terms may not be used in the claims, and the first, second, third,... may be replaced according to the order of the element declarations in the claims. Therefore, in the following specification, the first component may be the second component in the claims.

[0065] In the text, terms such as "about", "approximately", "substantially", "substantially" generally mean within 10%, or 5%, or 3%, or 2%, or 1%, or 0.5% of a given value or range. The given quantity is an approximate quantity, that is, the meaning of "about", "approximately", "substantially", "substantially" can still be implied without specifically stating "about", "approximately", "substantially", "substantially".

[0066] In some embodiments of the present disclosure, terms related to joining and connection, such as "connect" and "interconnect", unless otherwise defined, may mean that two structures are in direct contact, or may also mean that two structures are not in direct contact, and other structures are provided between the two. And these terms related to joining and connection may also include the cases where both structures can move or both structures are fixed. In addition, the term "coupled" includes any means of direct and indirect electrical connection.

[0067] In some embodiments of the present disclosure, the area, width, thickness or height of each component, or the distance or pitch between components, can be measured using optical microscopy (OM), scanning electron microscope (SEM), α-step, ellipsometer, or other suitable means. Specifically, according to some embodiments, a scanning electron microscope can be used to obtain a cross-sectional structure image of the component to be measured, and the area, width, thickness or height of each component, or the distance or pitch between components, can be measured.

[0068] In the present disclosure, the electronic device may include a display device, a light-emitting device, a backlight device, a virtual reality device, an augmented reality (AR) device, an antenna device, a sensing device, a splicing device, or any combination thereof, but not limited thereto. The display device can be a non-self-emitting display or a self-emitting display according to requirements, and can be a color display or a monochrome display according to requirements. The antenna device can be a liquid crystal type antenna device or a non-liquid crystal type antenna device, the sensing device can be a sensing device for sensing capacitance, light, heat, or ultrasonic waves, and the splicing device can be a display splicing device or an antenna splicing device, but not limited thereto. The electronic components in the electronic device may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may include a light emitting diode (LED) or a photodiode. The light emitting diode may include, for example, an organic light emitting diode (OLED), a mini LED, a micro LED, or a quantum dot LED, but not limited thereto. The transistor may include, for example, a top gate thin film transistor, a bottom gate thin film transistor, or a dual gate thin film transistor, but not limited thereto. The electronic device may also include, according to requirements, fluorescence materials, phosphor materials, quantum dot (QD) materials, or other suitable materials, but not limited thereto. The electronic device may have peripheral systems such as a driving system, a control system, a light source system, etc. to support the display device, the antenna device, the wearable device (such as including an augmented reality or virtual reality device), the vehicle-mounted device (such as including an automotive windshield), or the splicing device. It should be noted that the electronic device can be any permutation and combination of the foregoing, but not limited thereto. The following will illustrate the content of the present disclosure with an electronic device and its semiconductor chip, but the present disclosure is not limited thereto.

[0069] It should be noted that in the following examples, without departing from the spirit of the present disclosure, features in several different embodiments can be replaced, recombined, and mixed to complete other embodiments. As long as the features between the embodiments do not violate the spirit of the invention or conflict with each other, they can be arbitrarily mixed and used.

[0070] Now, reference will be made in detail to the exemplary embodiments of the present disclosure. Examples of the exemplary embodiments are illustrated in the accompanying drawings. Whenever possible, the same element symbols are used in the drawings and the description to represent the same or similar parts.

[0071] Figure 1 It is a cross-sectional schematic diagram of a semiconductor chip according to the first embodiment of the present disclosure. Please refer to Figure 1 , the semiconductor chip 100 of this embodiment includes a semiconductor die 110, a filling layer 120, a first electrode 130, a second electrode 140, and a reflective layer 150.

[0072] Specifically, the semiconductor die 110 has a first side 110a, a second side 110b, and a side surface 110c. The first side 110a is opposite to the second side 110b, and the first side 110a faces the first electrode 130. The second side 110b is closer to the second electrode 140 than the first side 110a. The side surface 110c connects the first side 110a and the second side 110b. In this embodiment, the semiconductor die 110 can be a vertical type chip. Among them, in the direction Z (for example, the normal direction of the semiconductor chip 100), the semiconductor die 110 includes a first-type semiconductor layer 111, an active layer 112, and a second-type semiconductor layer 113 stacked in sequence. The first-type semiconductor layer 111 is closer to the first electrode 130 than the second-type semiconductor layer 113, and the active layer 112 is disposed between the first-type semiconductor layer 111 and the second-type semiconductor layer 113.

[0073] In this embodiment, the semiconductor die 110 can be a light-emitting element (such as an organic light-emitting diode, a sub-millimeter light-emitting diode, a micro light-emitting diode, or a quantum dot light-emitting diode, but not limited thereto), and the active layer 112 can be a light-emitting layer, but not limited thereto. In this embodiment, the first-type semiconductor layer 111 can be a P-type semiconductor layer, and the second-type semiconductor layer 113 can be an N-type semiconductor layer, but not limited thereto. In some embodiments, the first-type semiconductor layer can also be an N-type semiconductor layer, and the second-type semiconductor layer can also be a P-type semiconductor layer.

[0074] The filling layer 120 surrounds the semiconductor die 110. The filling layer 120 can contact the side surface 110c of the semiconductor die 110. The filling layer 120 has a first surface 121, a second surface 122, and a side surface 123. The first surface 121 and the second surface 122 face each other, and the first surface 121 faces the first electrode 130. The second surface 122 is closer to the second electrode 140 than the first surface 121. The side surface 123 is located between the first surface 121 and the second surface 122, and the side surface 123 connects the first surface 121 and the second surface 122. In this embodiment, the included angle θ1 between the side surface 123 and the first surface 121 has an angle (taper angle), and the angle of the included angle θ1 can be between 90 degrees and 170 degrees, between 90 degrees and 150 degrees, between 100 degrees and 170 degrees, or between 110 degrees and 150 degrees, so that the filling layer 120 can be a bowl-like structure, and the filling layer 120 can be used in combination with the reflective layer 150 to concentrate the light emitted by the semiconductor die 110, reduce the light emission angle of the semiconductor die 110, or improve the light emission efficiency of the semiconductor die 110, but is not limited thereto. In this embodiment, the material of the filling layer 120 can include acrylic-based, alkylene oxide-based, siloxane, silica, other transparent filling materials, or a combination of the foregoing, but is not limited thereto.

[0075] In this embodiment, the filling layer 120 can include a light conversion material 124 for converting short-wavelength light (e.g., blue light) emitted by the semiconductor die 110 into long-wavelength light (e.g., red light or green light). In this embodiment, the light conversion material 124 can include quantum dots, phosphors, fluorescent materials, other suitable light conversion materials, or a combination of the foregoing, but is not limited thereto.

[0076] The first electrode 130 is disposed on the first side 110a of the semiconductor die 110. The first electrode 130 can contact and electrically connect to the first-type semiconductor layer 111 of the semiconductor die 110. In some embodiments, there is an ohmic contact layer (not shown) between the first electrode 130 and the first-type semiconductor layer 111, and the ohmic contact layer can include a transparent conductive oxide. In this embodiment, the material of the first electrode 130 can include a conductive material having high reflection characteristics (such as nickel, aluminum, silver, platinum, or a combination of the foregoing, but is not limited thereto), so that the first electrode 130 can be used to reflect the light emitted by the semiconductor die 110, improve the light emission efficiency of the semiconductor die 110, or enable the light emitted by the semiconductor die 110 to fully react with the light conversion material 124 to improve the light conversion efficiency.

[0077] The second electrode 140 is disposed on the second side 110b of the semiconductor die 110 and the second surface 122 of the filling layer 120. The second electrode 140 can be connected to the reflective layer 150. The second electrode 140 can contact and electrically connect to the second-type semiconductor layer 113 of the semiconductor die 110. In this embodiment, the material of the second electrode 140 can include a transparent conductive material, and the transparent conductive material can include transparent conductive oxides (TCOs), graphene, or metals. Among them, the transparent conductive oxides can include indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), or a combination of the foregoing, but not limited thereto. The metal can include a thin metal or a metal grid. For example, a thin metal layer (such as a magnesium layer or a silver layer) can be formed, or a metal grid layer with light-transmitting openings can be formed by screen printing or other patterning processes.

[0078] The reflective layer 150 is disposed on the filling layer 120, and the reflective layer 150 and the first electrode 130 are separated from each other. The reflective layer 150 includes a first portion 151 and a second portion 152. The first portion 151 is disposed on the side surface 123 of the filling layer 120, and the second portion 152 is disposed on the first surface 121 of the filling layer 120. One side of the first portion 151 can be connected to the second electrode 140, and the other side of the first portion 151 can be connected to the second portion 152; thereby, the second portion 152 can be electrically connected to the second-type semiconductor layer 113 of the semiconductor die 110 through the first portion 151 and the second electrode 140. In this embodiment, the material of the reflective layer 150 can include a conductive material with high reflection characteristics, so that the reflective layer 150 can be used to concentrate the light emitted by the semiconductor die 110, reduce the light-emitting angle of the semiconductor die 110, improve the light-emitting efficiency of the semiconductor die 110, or enable the light emitted by the semiconductor die 110 to fully react with the light conversion material 124 to improve the light conversion efficiency. In this embodiment, the material of the reflective layer 150 can be the same as that of the first electrode 130, but not limited thereto. The material of the reflective layer 150 can include silver, aluminum, tin, indium, copper, gold, or a combination of the above, but not limited thereto.

[0079] In this embodiment, since the first-type semiconductor layer 111 and the second-type semiconductor layer 113 of the vertical semiconductor die 110 can be electrically connected to the first electrode 130 and the second part 152 of the reflective layer 150 respectively, and the first electrode 130 and the second part 152 can be disposed on the same side (or on the same horizontal plane) of the semiconductor chip 100, the semiconductor chip 100 can be a vertical embedded flip-chip (VEFC), and the semiconductor chip 100 can be easily detected and subjected to mass transfer.

[0080] Other embodiments will be listed below for illustration. It must be noted here that the following embodiments follow the component numbers and some contents of the foregoing embodiments, where the same numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference can be made to the foregoing embodiments, and the following embodiments will not be repeated.

[0081] Figure 2 It is a cross-sectional schematic diagram of the semiconductor chip according to the second embodiment of the present disclosure. Please refer to Figure 2 and Figure 1 , the semiconductor chip 100a of this embodiment is similar to the semiconductor chip 100 of Figure 1 , but the difference between the two is that: the semiconductor chip 100a of this embodiment further includes a light-shielding electrode 160.

[0082] Specifically, please refer to Figure 2 , the light-shielding electrode 160 is disposed on the second side 110b of the semiconductor die 110, and the light-shielding electrode 160 is disposed between the second-type semiconductor layer 113 and the second electrode 140. In the direction Z (for example, the normal direction of the semiconductor chip 100a), the light-shielding electrode 160 can overlap at least a part of the semiconductor die 110 and the second surface 122 of the filling layer 120. The light-shielding electrode 160 can contact and be electrically connected to the second-type semiconductor layer 113 and the second electrode 140. In some embodiments, there is an ohmic contact layer (not shown) between the light-shielding electrode 160 and the second-type semiconductor layer 113.

[0083] In this embodiment, the material of the light-shielding electrode 160 may include a metal, such as gold, but is not limited thereto. In this embodiment, with respect to the visible light band, the transmittance of the light-shielding electrode 160 can be less than the transmittance of the second electrode 140; thus, the probability that the short-wavelength light (for example: blue light) emitted by the semiconductor die 110 is directly emitted outside the semiconductor chip 100a without going through the light conversion step can be reduced, and further, the light conversion efficiency of the semiconductor chip 100a can be improved or the color purity of the semiconductor chip 100a can be improved.

[0084] In this embodiment, the semiconductor die 110 has a width W1, the second surface 122 of the filling layer 120 has a width W2, and the light-shielding electrode 160 has a width W3. Among them, the width W1 can be the maximum width of the semiconductor die 110 measured along the direction X, the width W2 can be the maximum width of the second surface 122 of the filling layer 120 measured along the direction X, and the width W3 can be the maximum width of the light-shielding electrode 160 measured along the direction X. The direction X and the direction Z are different directions, and the direction X can be substantially perpendicular to the direction Z, but is not limited thereto. In this embodiment, the width W3 of the light-shielding electrode 160 can be greater than or equal to 30% of the width W1 of the semiconductor die 110, and the width W3 of the light-shielding electrode 160 can be less than or equal to 50% of the width W2 of the second surface 122 of the filling layer 120 (i.e., 30%×W1≤W3≤50%×W2), so as to reduce the probability that the short-wavelength light (e.g., blue light) emitted by the semiconductor die 110 is directly emitted outside the semiconductor chip 100a, but is not limited thereto.

[0085] In this embodiment, in the top view (not shown) of the semiconductor chip 100a, the semiconductor die 110 has an area A1, the second surface 122 of the filling layer 120 has an area A2, and the light-shielding electrode 160 has an area A3. In this embodiment, the area A3 of the light-shielding electrode 160 can be greater than or equal to 10% of the area A1 of the semiconductor die 110, and the area A3 of the light-shielding electrode 160 can be less than or equal to 50% of the area A2 of the second surface 122 of the filling layer 120 (i.e., 10%×A1≤A3≤50%×A2), so as to reduce the probability that the short-wavelength light (e.g., blue light) emitted by the semiconductor die 110 is directly emitted outside the semiconductor chip 100a, but is not limited thereto.

[0086] Figure 3 It is a schematic cross-sectional view of a semiconductor chip according to the third embodiment of the present disclosure. Please also refer to Figure 3 and Figure 1 The semiconductor chip 100b of this embodiment is similar to the semiconductor chip 100 of Figure 1 , but the difference between the two is that: the semiconductor chip 100b of this embodiment further includes a distributed Bragg reflector (DBR) 170.

[0087] Specifically, please refer to Figure 3, a Bragg reflection layer 170 is disposed on the second electrode 140, and the second electrode 140 is disposed between the Bragg reflection layer 170 and the semiconductor die 110. In this embodiment, the Bragg reflection layer 170 can be used to reflect light of short wavelengths (e.g., blue light) and allow light of long wavelengths (e.g., red light or green light) to pass through, so as to reduce the probability that the short-wavelength light emitted by the semiconductor die 110 is directly emitted outside the semiconductor chip 100b without going through the light conversion step. Furthermore, the light conversion efficiency of the semiconductor chip 100b can be improved or the color purity of the semiconductor chip 100b can be improved.

[0088] For example, when the semiconductor die 110 emits blue light, a part of the blue light directed towards the filling layer 120 containing a red light conversion material will first go through the light conversion step to be converted into red light and then be emitted outside the semiconductor chip 100b through the Bragg reflection layer 170; another part of the blue light directed towards the Bragg reflection layer 170 cannot directly pass through the Bragg reflection layer 170 and can be reflected by the Bragg reflection layer 170 until the reflected blue light goes through the light conversion step to be converted into red light, and then it can pass through the Bragg reflection layer 170 and be emitted outside the semiconductor chip 100b; with this design, the light emitted by the semiconductor chip 100b can be substantially red light and the probability of blue light doping can be reduced.

[0089] Figure 4 It is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure. Please refer to Figure 4 , the electronic device 10 of this embodiment includes a substrate 210, a circuit layer 220, a unit definition layer 230, a semiconductor chip 100, an underfill layer 240, an adhesive layer 250, a color filter layer 260, and a substrate 270.

[0090] Specifically, the substrate 210 may include a rigid substrate, a flexible substrate, or a combination of the foregoing. For example, the material of the substrate 210 may include glass, quartz, sapphire, ceramics, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), other suitable substrate materials, or a combination of the foregoing, but is not limited thereto.

[0091] The circuit layer 220 is disposed on the substrate 210. The circuit layer 220 can be an active driving circuit or a passive driving circuit for driving the semiconductor chip 100. The circuit layer 220 may include an insulating layer 221, a conductive layer 222, and metal traces (not shown), etc. The conductive layer 222 is disposed on the insulating layer 221, and the conductive layer 222 may include pads 2221 and pads 2222 that are separated from each other. The metal traces are disposed in the insulating layer 221. In this embodiment, the material of the conductive layer 222 may include gold, tin, copper, other suitable conductive materials, or a combination of the foregoing, but is not limited thereto. The insulating layer 221 can be a single-layer structure or a multi-layer structure, and the material of the insulating layer 221 may include organic materials, inorganic materials, or a combination of the foregoing, but is not limited thereto.

[0092] The cell definition layer 230 is disposed on the circuit layer 220. The cell definition layer 230 may include partitions 231 and an opening O1 for accommodating the semiconductor chip 100. The opening O1 can expose a part of the insulating layer 221 and the pads 2221 and pads 2222 of the conductive layer 222 in the circuit layer 220. In this embodiment, the material of the cell definition layer 230 may include an organic photoresist, and the color of the cell definition layer 230 can be transparent, black, gray, or white, but is not limited thereto.

[0093] The semiconductor chip 100 of this embodiment can be Figure 1 the semiconductor chip shown, so it will not be repeated here. The semiconductor chip 100 is disposed on the substrate 210 and in the opening O1 of the cell definition layer 230. The semiconductor chip 100 can be bonded and electrically connected to the circuit layer 220 through the conductive layer 222. Among them, the first electrode 130 of the semiconductor chip 100 can contact and be electrically connected to the pad 2221 of the conductive layer 222, and the second part 152 of the reflective layer 150 can contact and be electrically connected to the pad 2222 of the conductive layer 222. In this embodiment, the semiconductor chip 100 may include a first semiconductor chip 101, a second semiconductor chip 102, and a third semiconductor chip 103 to emit light of different colors respectively. For example, the first semiconductor chip 101 can emit red light, the second semiconductor chip 102 can emit green light, and the third semiconductor chip 103 can emit blue light, but is not limited thereto. Among them, the filling layer 120 of the first semiconductor chip 101 and the second semiconductor chip 102 may include a light conversion material 124, and the filling layer 120' of the third semiconductor chip 103 may include scattering particles 125 (such as titanium dioxide, but not limited thereto) and does not include a light conversion material.

[0094] The underfill layer 240 is disposed in the opening O1, and the underfill layer 240 can surround the semiconductor chip 100 to fix the semiconductor chip 100 within the opening O1. In this embodiment, the material of the underfill layer 240 may include acrylic-based, alkylene oxide-based, silicone, silica, other suitable adhesives, or a combination of the foregoing, but is not limited thereto.

[0095] The adhesive layer 250 is disposed on the cell definition layer 230. In this embodiment, the material of the adhesive layer 250 may include optically clear adhesive (OCA), optical clear resin (OCR), other suitable transparent materials, or a combination of the above, but is not limited thereto.

[0096] The color filter layer 260 is disposed on the semiconductor chip 100 and the adhesive layer 250. The color filter layer 260 includes color filter units 261 and a black matrix layer 262. In the direction Z (for example, the normal direction of the substrate 210 or the normal direction of the electronic device 10), the color filter units 261 of the color filter layer 260 may overlap and correspond to the semiconductor chip 100, and the black matrix layer 262 may overlap and correspond to the partition 231 of the cell definition layer 230. In this embodiment, the color filter units 261 may include a first color filter unit 2611, a second color filter unit 2612, and a third color filter unit 2613 for passing light of different wavelengths respectively; thereby, the arrangement of the color filter units 261 can be further used to improve the color purity of the semiconductor chip 100 or improve the ambient contrast ratio. For example, the first color filter unit 2611 can pass red light, the second color filter unit 2612 can pass green light, and the third color filter unit 2613 can pass blue light, but is not limited thereto.

[0097] The substrate 270 is disposed on the color filter layer 260 and is disposed relative to the substrate 210. The substrate 270 may include a rigid substrate, a flexible substrate, or a combination of the foregoing. For example, the material of the substrate 270 may include glass, quartz, sapphire, ceramic, polycarbonate, polyimide, polyethylene terephthalate, other suitable substrate materials, or a combination of the foregoing, but is not limited thereto.

[0098] Figure 5 A cross-sectional schematic diagram of an electronic device according to another embodiment of the present disclosure. Please refer to Figure 5 and Figure 4 simultaneously. The electronic device 10a of this embodiment and Figure 4Similar to the electronic device 10, the difference between the two is that in the electronic device 10a of this embodiment, the first semiconductor chip 101a and the second semiconductor chip 102a in the semiconductor chip 100 further include a Bragg reflection layer 170, and the third semiconductor chip 103 in the semiconductor chip 100 does not need to be provided with the Bragg reflection layer 170.

[0099] Specifically, please refer to Figure 5 , the Bragg reflection layer 170 is disposed on the opening O1 of the cell definition layer 230, and the Bragg reflection layer 170 is disposed on the second electrodes 140 of the first semiconductor chip 101a and the second semiconductor chip 102a. In the direction Z (for example, the normal direction of the substrate 210 or the normal direction of the electronic device 10), the Bragg reflection layer 170 can overlap and correspond to the first semiconductor chip 101a and the second semiconductor chip 102a in the semiconductor chip 100. In this embodiment, the Bragg reflection layer 170 can be used to reflect short-wavelength light (for example: blue light) and allow long-wavelength light (for example: red light or green light) to pass through, so as to reduce the probability that the short-wavelength light emitted by the first semiconductor chip 101a and the second semiconductor chip 102a is directly emitted without going through the light conversion step, thereby improving the color purity of the semiconductor chip.

[0100] Although Figure 5 schematically shows that the Bragg reflection layer 170 is a single layer, the present disclosure does not limit the number of layers of the Bragg reflection layer 170. In some embodiments, a stack of multiple Bragg reflection layers can be set according to design or usage requirements to selectively allow light of different colors to pass through.

[0101] The color filter layer 260 is disposed on the Bragg reflection layer 170, and the Bragg reflection layer 170 is disposed between the color filter layer 260 and the semiconductor chip 100.

[0102] Figure 6 This is an application of the electronic device according to another embodiment of the present disclosure. Please refer to Figure 6 , the electronic device 10b of the present disclosure can be a vehicle head-up display (HUD) or a panoramic head-up display (PHUD), but is not limited thereto.

[0103] The electronic device 10b of the present disclosure may include a semiconductor chip 100 as shown in Figure 1 , a semiconductor chip 100a as shown in Figure 2 , a semiconductor chip 100b as shown in Figure 3 , an electronic device 10 as shown in Figure 4 , or as shown in Figure 5The illustrated electronic device 10a can thus provide highly concentrated light or can provide high-brightness light, thereby reducing the influence of external ambient light.

[0104] In this embodiment, with respect to the normal line L of the windshield 300, the screen of the electronic device 10b can be projected onto the windshield 300 at an incident angle θ2 of, for example, 30 degrees to 70 degrees, so that the driver 400 can see the screen of the electronic device 10b from the windshield 300.

[0105] In summary, in the electronic device and its semiconductor chip of the present disclosure embodiment, since the filling layer includes a light conversion material and the reflective layer is disposed on the filling layer, the light emitted by the semiconductor die can fully react with the light conversion material to improve the light conversion efficiency. In addition, by disposing the light-shielding electrode between the second-type semiconductor layer and the second electrode, disposing the Bragg reflection layer on the second electrode, or disposing the color filter layer on the semiconductor chip, the color purity of the semiconductor chip can be improved.

[0106] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure and are not intended to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A semiconductor chip, characterized in that, Comprising: A semiconductor grain, comprising a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence; A filling layer, surrounding the semiconductor grain and comprising a light conversion material; A first electrode, disposed on a first side of the semiconductor grain and electrically connected to the first-type semiconductor layer; A second electrode, disposed on a second side of the semiconductor grain and electrically connected to the second-type semiconductor layer, wherein the second electrode comprises a transparent conductive material; And A reflective layer, disposed on the filling layer.

2. The semiconductor chip according to claim 1, wherein The second electrode is connected to the reflective layer.

3. The semiconductor chip according to claim 1, characterized in that, The filling layer comprises a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, and the reflective layer comprises a first portion disposed on the side surface.

4. The semiconductor chip according to claim 3, characterized in that, The reflective layer further comprises a second portion disposed on the first surface, the second electrode is connected to the first portion, and the first portion is connected to the second portion.

5. The semiconductor chip according to claim 3, characterized in that, The reflective layer and the first electrode comprise the same material.

6. The semiconductor chip according to claim 3, wherein The side surface has an angle relative to the first surface, and the angle is between 90 degrees and 150 degrees.

7. The semiconductor chip according to claim 6, characterized in that, The angle is between 110 degrees and 150 degrees.

8. The semiconductor chip according to claim 3, characterized in that, Further comprising: A light-shielding electrode, disposed between the second-type semiconductor layer and the second electrode and electrically connected to the second-type semiconductor layer and the second electrode.

9. The semiconductor chip according to claim 8, wherein, Relative to the visible light band, the transmittance of the light-shielding electrode is less than the transmittance of the second electrode.

10. The semiconductor chip according to claim 8, characterized in that, The light-shielding electrode overlaps at least a part of the second surface.

11. The semiconductor chip according to claim 1, characterized in that, Further comprising: A Bragg reflective layer, disposed on the second electrode.

12. An electronic device, characterized in that, Comprising: A substrate; A circuit layer, disposed on the substrate; And A semiconductor chip, disposed on the substrate and electrically connected to the circuit layer, wherein the semiconductor chip comprises: A semiconductor grain, comprising a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence; A filling layer, surrounding the semiconductor grain and comprising a light conversion material; A first electrode, disposed on a first side of the semiconductor grain and electrically connected to the first-type semiconductor layer; A second electrode, disposed on a second side of the semiconductor grain and electrically connected to the second-type semiconductor layer, wherein the second electrode comprises a transparent conductive material; and A reflective layer, disposed on the filling layer.

13. The electronic device according to claim 12, wherein Further comprising: A unit definition layer, disposed on the circuit layer and comprising an opening for accommodating the semiconductor chip.

14. The electronic device according to claim 13, wherein Further comprising: A bottom filling layer, disposed in the opening and surrounding the semiconductor chip.

15. The electronic device according to claim 13, wherein The semiconductor chip further comprises: A Bragg reflective layer, disposed on the opening of the unit definition layer and overlapping the semiconductor chip.

16. The electronic device according to claim 15, wherein Further comprising: A color filter layer, disposed on the Bragg reflective layer and overlapping the semiconductor chip.

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