Atomic deposition spray chamber and atomic deposition equipment

Abstract

The present invention relates to the technical field of atomic layer deposition technology, and in particular to an atomic deposition spray chamber and atomic deposition equipment, comprising an upper chamber cover, a spray head, an air equalization component, a substrate and a lower chamber; the upper chamber cover and the lower chamber can be surrounded by each other to form a spray chamber, the substrate is arranged on the lower chamber for carrying the substrate, and the spray head is arranged on the upper chamber cover; the air equalization component is arranged between the spray head and the substrate, and the air equalization component has an air diffusion plate, a buffer layer and a uniform plate; the air diffusion plate is evenly provided with a plurality of air diffusion holes, and a plurality of spoiler protrusion structures are evenly spaced; a three-level flow field control system is formed by stacking the air diffusion plate, the buffer layer and the uniform plate from top to bottom, thereby significantly improving the uniformity and stability of the air flow, solving the technical problems in the prior art that the air equalization effect of the single-layer air equalization plate in the spray chamber is limited, the spraying is often uneven, and a dense film cannot be formed, thereby ensuring the uniform thickness of the film preparation and improving the film quality.

Description

Technical Field

[0001] The present invention relates to the technical field of atomic layer deposition, and in particular to an atomic deposition spray chamber and atomic deposition equipment. Background Art

[0002] Atomic layer deposition (ALD) is a thin film deposition technique based on chemical vapor deposition (CVD). Each precursor adsorbs saturatedly onto the surface, forming a dense film. This process typically involves a four-step process: pulsing the first precursor, purging with an inert carrier gas, pulsing the second precursor, and then purging with an inert carrier gas again.

[0003] Existing atomic layer deposition equipment typically features a sealed deposition chamber, within which a spray chamber and deposition platform are installed. The substrate to be deposited is placed on the deposition platform, and process gas is sprayed through the spray component and directed toward the substrate. Therefore, the uniformity of the gas output from the spray chamber has a crucial impact on deposition quality. Therefore, the spray chamber is typically equipped with a uniform mesh gas distribution plate to ensure uniformity.

[0004] However, the gas distribution effect of a single-layer gas distribution plate is limited, which often leads to uneven spraying and inability to form a dense film when a thicker film needs to be prepared in the spray chamber. Summary of the Invention

[0005] The purpose of the present invention is to provide an atomic deposition spray chamber and an atomic deposition device to solve the technical problem that the single-layer gas equalization plate in the spray chamber in the prior art has a limited gas equalization effect, which often leads to uneven spraying and inability to form a dense film when the spray chamber needs to prepare a thicker film.

[0006] In a first aspect, the present invention provides an atomic deposition spray chamber comprising an upper chamber cover, a spray head, a gas uniformity component, a substrate, and a lower chamber;

[0007] The upper cavity cover and the lower cavity body are detachably connected to enclose a closed spray cavity. The substrate is disposed on the lower cavity body and is used to support a substrate. The spray head is disposed on the upper cavity cover and is disposed toward the lower cavity.

[0008] The gas uniformity component is arranged between the shower head and the substrate, and comprises a gas diffusion plate, a buffer layer and a uniform plate. The gas diffusion plate, the buffer layer and the uniform plate are stacked from top to bottom. The gas diffusion plate, the buffer layer and the uniform plate cooperate to form a three-level flow field control system, so that the sprayed airflow can achieve a flow state transition from laminar flow to turbulent flow, and from turbulent flow to quasi-laminar flow;

[0009] The air diffusion plate is evenly provided with a plurality of air diffusion holes, and the air diffusion holes penetrate the air diffusion plate. The air diffusion plate is evenly spaced and provided with a plurality of flow spoiler protrusion structures.

[0010] Furthermore, a plurality of the spoiler protrusion structures are arranged in a matrix on the air diffuser plate. The height of the spoiler protrusion structure is 0.2 to 0.5 times the distance between the shower head and the air diffuser plate.

[0011] Furthermore, a gradually diverging flow channel is provided at the bottom end of the air diffusion hole, and the cross-sectional area of ​​the gradually diverging flow channel increases gradually along the gas flow direction.

[0012] Furthermore, the buffer layer includes a plurality of buffer plates arranged in parallel, and the buffer layer can absorb and dissolve unstable energy in the airflow.

[0013] Furthermore, the uniform plate has a plurality of flow-guiding microchannels, and the plurality of flow-guiding microchannels are connected to form a microchannel network.

[0014] Furthermore, the atomic deposition spray chamber further includes an electric field emission component;

[0015] The electric field emission component is arranged in the lower cavity and is arranged toward the substrate to construct an electrostatic field environment on the surface of the substrate.

[0016] Furthermore, the atomic deposition spray chamber further includes an exhaust passage;

[0017] The exhaust passage is arranged in the lower cavity, one end of the exhaust passage is connected to a plurality of exhaust ports respectively, and the plurality of exhaust ports are evenly arranged on the circumference of the substrate. The other end of the exhaust passage is arranged at the bottom of the lower cavity and connected to an external exhaust component.

[0018] Furthermore, the shower head has a main pipeline and several branch nozzles, the several branch nozzles are respectively connected to one end of the main pipeline, and the other end of the main pipeline is used to connect to an external process gas source. The several branch nozzles are evenly arranged on the upper cavity cover, and the branch nozzles are set toward the diffuser plate.

[0019] Furthermore, the spacing between adjacent spoiler protrusion structures is set in proportion to the distribution density of the branch nozzles.

[0020] In a second aspect, the present invention further provides an atomic deposition device, comprising the above-mentioned atomic deposition spray chamber.

[0021] Compared with the prior art, the present invention provides an atomic deposition spray chamber, comprising an upper chamber cover, a spray head, an air uniformity component, a substrate and a lower chamber; the upper chamber cover and the lower chamber can be detachably connected to enclose a closed spray chamber, the substrate is arranged on the lower chamber, the substrate is used to carry the substrate, the spray head is arranged on the upper chamber cover, and is arranged toward the lower chamber; the air uniformity component is arranged between the spray head and the substrate, the air uniformity component has an air diffusion plate, a buffer layer and a uniform plate, the air diffusion plate, the buffer layer and the uniform plate are stacked from top to bottom, the air diffusion plate, the buffer layer and the uniform plate cooperate to form a three-level flow field control system, so that the spray air flow can achieve a flow state transition from laminar flow to turbulent flow and from turbulent flow to quasi-laminar flow; the air diffusion plate is evenly provided with a plurality of air diffusion holes, the air diffusion holes penetrate the air diffusion plate, and a plurality of air turbulence holes are evenly spaced on the air diffusion plate Flow bulge structure; by arranging an air uniforming component consisting of an air diffuser plate, a buffer layer and a uniform plate between the spray head and the substrate, the air diffuser plate is evenly spaced with flow turbulence structures, which can redirect the airflow and slow down, form a separation zone and decompose the concentrated airflow into small branches, thereby realizing preliminary fine dispersion of the airflow, and the air diffuser plate, buffer layer and uniform plate are stacked from top to bottom to form a three-level flow field control system, thereby converting the sprayed airflow into laminar flow, turbulent flow and quasi-laminar flow in turn, thereby significantly improving the airflow uniformity and stability, and solving the problem that the air uniformity effect of the single-layer air uniforming plate in the spray cavity in the prior art is limited, which often leads to uneven spraying and inability to form a dense film when the spray cavity needs to prepare a thicker film, thereby ensuring the uniform thickness of the film preparation and improving the film quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0023] Figure 1 A schematic diagram of the overall structure of the atomic deposition spray chamber provided by an embodiment of the present invention;

[0024] Figure 2 An exploded diagram of the structure of the gas homogenization component in the atomic deposition spray chamber provided by an embodiment of the present invention;

[0025] Figure 3 A schematic structural diagram of an air diffuser plate in an atomic deposition spray chamber provided by an embodiment of the present invention;

[0026] Figure 4 A schematic diagram of the structure of the air diffusion holes in the air diffusion plate in the atomic deposition spray chamber provided by an embodiment of the present invention;

[0027] Figure 5 This is a schematic structural diagram of a buffer layer in an atomic deposition spray chamber provided by an embodiment of the present invention.

[0028] Reference numerals:

[0029] 100, upper cavity cover;

[0030] 200, sprinkler head; 210, main pipeline; 220, branch sprinkler head;

[0031] 300, gas equalization component;

[0032] 310, air diffuser plate; 311, air diffuser hole; 3111, gradually expanding channel; 312, spoiler protrusion structure;

[0033] 320, buffer layer; 321, buffer plate; 3211, buffer hole; 330, uniform plate; 331, flow guide microchannel; 340, spacer;

[0034] 400, substrate;

[0035] 500, lower cavity;

[0036] 600. Exhaust passage. DETAILED DESCRIPTION

[0037] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0038] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0039] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0040] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the product of the application is typically placed when in use. These terms are intended solely to facilitate the description of the present invention and to simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0041] Furthermore, terms such as "horizontal," "vertical," and "overhanging" do not necessarily imply that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0042] In the description of the present invention, it should also be noted that, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to mechanical connections or electrical connections; they may refer to direct connections or indirect connections through an intermediate medium; and they may refer to internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0043] The following embodiments of the present invention are described in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.

[0044] Example 1

[0045] like Figures 1 to 3As shown, an embodiment of the present invention provides an atomic deposition spray chamber, comprising an upper chamber cover 100, a shower head 200, a gas equalization component 300, a substrate 400 and a lower chamber 500; the upper chamber cover 100 and the lower chamber 500 can be detachably connected to form a closed spray chamber, the substrate 400 is arranged on the lower chamber 500, the substrate 400 is used to carry the substrate, the shower head 200 is arranged on the upper chamber cover 100, and is arranged toward the lower chamber 500; the gas equalization component 300 is arranged between the shower head 200 and the substrate 400, and the gas equalization component 300 is arranged between the shower head 200 and the substrate 400. Component 300 comprises a diffuser plate 310, a buffer layer 320, and a uniform plate 330. These plates are stacked from top to bottom, forming a three-stage flow field control system. These three layers enable the spraying airflow to transition from laminar to turbulent, and then from turbulent to quasi-laminar. The diffuser plate 310 is evenly distributed with a number of diffuser holes 311 that penetrate the plate. Multiple flow-disrupting protrusions 312 are evenly spaced on the plate.

[0046] That is, an atomic deposition spray chamber provided by an embodiment of the present invention has an air distribution component 300 composed of an air distribution plate 310, a buffer layer 320 and a uniform plate 330 arranged between the spray head 200 and the substrate 400. The air distribution plate 310 is evenly spaced with spoiler protrusion structures 312, which can redirect and slow down the airflow, form a separation zone and decompose the concentrated airflow into small branches, thereby realizing preliminary fine dispersion of the airflow. The air distribution plate 310, the buffer layer 320 and the uniform plate 330 are stacked from top to bottom to form a three-level flow field control system, thereby converting the sprayed airflow into laminar flow, turbulent flow and quasi-laminar flow in turn, thereby significantly improving the uniformity and stability of the airflow, solving the technical problem that the air distribution effect of the single-layer air distribution plate in the spray chamber in the prior art is limited, which often leads to uneven spraying and inability to form a dense film when the spray chamber needs to prepare a thicker film, thereby ensuring the uniform thickness of the film preparation and improving the film quality.

[0047] Specifically, in this embodiment, the upper cavity cover 100 is in the shape of a rectangular parallelepiped as a whole, with a hollow interior and an open bottom. The lower cavity 500 is the same shape as the upper cavity cover 100 and is symmetrically arranged. The two can be connected by bolts to form a closed spray cavity. A sealing gasket can be provided at the joint between the upper cavity cover 100 and the lower cavity 500 to ensure the sealing effect of the spray cavity. A horizontal support platform is provided in the cavity of the lower cavity 500, and the substrate 400 is fixed on the support platform. In this embodiment, the substrate 400 is provided as flat glass, so that it is convenient to present on the substrate. A spray head 200 is provided on the top of the upper cavity cover 100, and the through hole on the upper cavity cover 100 of the spray head 200 extends into the cavity in the upper cavity cover 100, spraying gas downward. The gas equalizing component 300 is provided in the cavity in the upper cavity cover 100, and the sprayed gas passes through the gas equalizing component 300 from top to bottom, thereby evenly spraying on the substrate on the substrate 400.

[0048] The air equalization assembly 300 is stacked with a diffuser plate 310, a buffer layer 320, and a uniform plate 330. The diffuser plate 310 converts the sprayed airflow into a laminar flow state, the buffer layer 320 converts the airflow into a turbulent flow state, and finally the uniform plate 330 converts the airflow into a quasi-laminar flow state. In the three-layer structure of the air equalization assembly 300, the diffuser plate 310 is generally flat and is provided with a plurality of flow-disrupting protrusions 312. The flow-disrupting protrusions 312 are approximately conical and evenly distributed on the diffuser plate 310. The diffuser holes 311 are arranged in a matrix and vertically extend through the diffuser plate 310. In other embodiments of the present application, the diffuser holes 311 can extend through the diffuser plate 310 at an angle. When the sprayed gas impacts the diffuser plate 310, the conical structure uses fluid mechanics phenomena such as boundary layer separation and vortex generation to redirect and slow down the airflow, forming a separation zone and vortex, decomposing the concentrated airflow into tiny branches, achieving preliminary fine dispersion of the airflow, and significantly improving the uniformity and stability of the airflow. Through three-level flow field control, the gas Reynolds number can be reduced from 2000-5000 to 50-200, and the gas flow velocity unevenness in the simulation data is less than 5%.

[0049] Preferably, a plurality of spoiler protrusion structures 312 are arranged in a matrix on the air diffuser plate 310 .

[0050] Specifically, in this embodiment, the spoiler protrusion structures 312 are arranged in a matrix on the air dispersion plate 310, thereby making the spacing between the spoiler protrusion structures 312 uniform and fixed, and can be optimized through a CFD model to adjust the spacing of the spoiler protrusion structures 312, thereby further optimizing the airflow dispersion effect.

[0051] Furthermore, the height (h) of the flow-disrupting protrusion structure 312 is 0.2 to 0.5 times the distance (d) between the shower head 200 and the air diffusion plate 310 .

[0052] Specifically, according to the Idelchik formula, the relationship between the local drag coefficient ζ of the convex structure and the geometric parameters is:

[0053]

[0054] Among them, K = 0.8~1.2 (empirical coefficient). To achieve a balance between energy consumption and performance, ζ = 0.2~0.8, which is calculated as 0.2≤h / d≤0.5.

[0055] While maintaining the same chamber structure and size, as well as the type and number of sources, the height of the spoiler protrusion 312 was varied to correspond to the ratio of the distance between the showerhead 200 and the diffuser plate 310. Atom deposition experiments were conducted, and data were collected at nine points located at the same position on the substrate 400. The experimental results are shown in Table 1. The deposition rate refers to the thickness of each deposition (unit: Å), representing the speed of deposition. The non-uniformity was calculated using the formula (Max-Min) / (2*Ave)*100%, where Max, Min, and Ave represent the maximum and minimum values ​​of the deposition thickness on the substrate 400, as well as the average thickness of a single deposition on the substrate 400. A smaller non-uniformity value indicates a more uniform deposition effect.

[0056] Table 1 Sedimentation conditions corresponding to different ratios

[0057]

[0058] The data show that in the range of h / d=0.2~0.5, the process stability is enhanced and the overall performance reaches the optimal balance point.

[0059] Specifically, in this embodiment, the distance between the shower head 200 and the diffuser plate 310 is the vertical distance from the bottom of the shower head 200 to the horizontal surface of the diffuser plate 310. The height of the spoiler protrusion 312 is 0.3 times the distance between the shower head 200 and the diffuser plate 310.

[0060] Preferably, the spacing (s) between adjacent flow-disturbing protrusion structures 312 is set in proportion to the distribution density (d) of the branch nozzles 220 .

[0061] Specifically, in this embodiment, the ratio of the spacing (s) between adjacent spoiler protrusion structures 312 and the distribution density (d) of the branch nozzles 220 is set to s / d=0.3~0.6. When the cavity structure and size remain unchanged, the ratio of the spacing between adjacent spoiler protrusion structures 312 and the distribution density of the branch nozzles 220 is changed, and the flow field simulation is performed using software. The flow velocity of fifty positioning points is selected on the surface of the substrate 400, and the flow velocity non-uniformity is calculated using the formula (Max-Min) / (Max+Min)*100%. Max and Min represent the maximum and minimum values ​​of the flow velocity at the fifty points. The smaller the non-uniformity number, the more uniform the flow field. The simulation calculation results are shown in Table 2.

[0062] Table 2 Flow fields corresponding to different ratios

[0063]

[0064] Specifically, in this embodiment, the distance between adjacent spoiler protrusion structures 312 is set to be 0.4 in proportion to the distribution density of the branch nozzles 220 .

[0065] like Figure 4 As shown, further, a gradually diverging flow channel is provided at the bottom end of the air diffusion hole 311, and the cross-sectional area of ​​the gradually diverging flow channel increases along the gas flow direction.

[0066] Specifically, the lower end of the air diffusion hole 311 is in a conical cylindrical shape, and its diameter gradually increases from top to bottom, thereby forming a gradually expanding flow channel with a gradually increasing cross-sectional area, thereby further dispersing the airflow through the gradually expanding flow channel.

[0067] like Figure 5 As shown, further, the buffer layer 320 includes a plurality of buffer plates 321 arranged in parallel, and the buffer layer 320 is configured to absorb and dissipate unstable energy in the airflow.

[0068] Specifically, the buffer layer 320 is made of multiple layers of buffer plates 321, and all buffer plates 321 are arranged horizontally and stacked from top to bottom. The buffer plates 321 are made of materials with strong corrosion resistance, high temperature resistance and high strength. They are tightly attached to each other and maintain a stable connection. Buffer holes 3211 are provided through the buffer plates 321, and the buffer holes 3211 on each buffer plate 321 are connected from top to bottom. When the airflow passes through the buffer layer 320, it flows through the buffer holes 3211, and through the momentum exchange principle of viscous fluid and Bernoulli's principle, it absorbs and resolves the unstable energy in the airflow, further smoothes the fluctuations of the airflow, and makes it more stable.

[0069] Preferably, the gas equalizing component 300 further includes pads 340 , and a plurality of pads 340 are disposed between the buffer plate 321 and the equalizing plate 330 , with the tops of the pads 340 abutting against the buffer plate 321 , and the bottoms of the pads 340 abutting against the equalizing plate 330 .

[0070] Specifically, the pads 340 are fixed around the buffer layer 320 and disposed between the buffer plate 321 and the uniform plate 330, thereby providing support for the buffer layer 320. In this embodiment, the pads 340 are made of a high-strength, low-friction ceramic material. This not only provides stable support for the buffer layer 320, preventing displacement or deformation under the impact of airflow, but also reduces friction and vibration between the buffer layer 320 and other components of the cavity, further ensuring smooth airflow transmission within the cavity.

[0071] Furthermore, the uniform plate 330 has a plurality of flow guiding microchannels 331 , and the plurality of flow guiding microchannels 331 are connected to form a microchannel network.

[0072] Specifically, the uniform plate 330 is configured as a porous metal material with a uniform pore distribution. Since the internal pore structure of the porous metal material is relatively uniform, a network of linear flow-guiding microchannels 331 is formed. This shape of passage has a lower flow resistance in the microchannel, and the fluid can flow therein at a relatively stable speed. Under the action of the pressure difference, the airflow flows according to the law described by Darcy's law. After the airflow flows out of the buffer layer 320 and enters the uniform plate 330, it will undergo final fine adjustments under the guidance of these pores and channels, so that the airflow can reach a highly dispersed and stable laminar state when it leaves the uniform plate 330 and enters the cavity.

[0073] Furthermore, the atomic deposition shower chamber further includes an electric field emission component; the electric field emission component is disposed in the lower chamber 500 and is disposed toward the substrate 400 to construct an electrostatic field environment on the surface of the substrate 400 .

[0074] Specifically, the electric field emission assembly includes an electric field emission source and a power supply. The electric field emission source is used to emit an electric field and is fixed in the cavity within the lower chamber 500. The electric field emission assembly is positioned toward the substrate 400, thereby creating an electrostatic field environment on the surface of the substrate 400. Under the action of the electrostatic field, the source material is affected by electrostatic induction, and its charge distribution changes. Driven by the electric field force, it migrates toward the glass substrate 400 and is ultimately deposited on the surface of the glass substrate 400 through electrostatic adsorption, effectively ensuring the deposition effect of the source.

[0075] Furthermore, the atomic deposition spray chamber also includes an exhaust passage 600; the exhaust passage 600 is arranged in the lower cavity 500, one end of the exhaust passage 600 is connected to a number of exhaust ports, and the several exhaust ports are evenly arranged on the surrounding side of the substrate 400, and the other end of the exhaust passage 600 is arranged at the bottom of the lower cavity 500 and connected to an external exhaust component.

[0076] Specifically, a number of exhaust ports are evenly distributed around the periphery of the substrate 400, each connected to an exhaust passage 600. Multiple exhaust passages 600 converge to form a master exhaust passage 600, which extends to the bottom of the lower chamber 500 and connects to an external exhaust component. During the exhaust operation, the gas follows a pre-set path, cleverly bypassing the substrate 400 and being steadily extracted from the lower chamber 500. This effectively prevents direct impact and interference of the airflow on the surface of the substrate 400, thereby creating a stable and uniform physical environment for the deposition process of the source on the substrate 400 surface.

[0077] Preferably, the shower head 200 has a main pipeline 210 and several branch nozzles 220, the several branch nozzles 220 are respectively connected to one end of the main pipeline 210, and the other end of the main pipeline 210 is used to connect to an external process gas source. The several branch nozzles 220 are evenly arranged on the upper chamber cover 100, and the branch nozzles 220 are set toward the diffuser plate 310.

[0078] Specifically, one end of the main pipeline 210 is used to connect to the external process gas source, and the other end is connected to the branch nozzles 220 through various branch pipelines. Multiple branch nozzles 220 are evenly arranged in a matrix on the upper chamber cover 100, so as to evenly spray air flow to the diffuser plate 310.

[0079] The present invention also provides an atomic deposition device, which includes the entire structure of the above-mentioned atomic deposition spray chamber, and can naturally achieve all the effects of the above-mentioned atomic deposition spray chamber, which will not be repeated here.

[0080] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An atomic deposition spray chamber, characterized in that: It comprises an upper cavity cover (100), a shower head (200), an air distribution component (300), a substrate (400) and a lower cavity (500); The upper cavity cover (100) and the lower cavity body (500) are detachably connected to form a closed spray cavity. The substrate (400) is arranged on the lower cavity body (500). The substrate (400) is used to carry a substrate. The spray head (200) is arranged on the upper cavity cover (100) and is arranged toward the lower cavity body (500). The gas uniformity component (300) is arranged between the shower head (200) and the substrate (400), and the gas uniformity component (300) comprises a gas diffusion plate (310), a buffer layer (320), and a uniformity plate (330). The gas diffusion plate (310), the buffer layer (320), and the uniformity plate (330) are stacked from top to bottom, and the gas diffusion plate (310), the buffer layer (320), and the uniformity plate (330) cooperate to form a three-level flow field control system; The air diffusion plate (310) is evenly provided with a plurality of air diffusion holes (311), the air diffusion holes (311) penetrate the air diffusion plate (310), and the air diffusion plate (310) is evenly spaced and provided with a plurality of flow-disturbing protrusion structures (312); A plurality of the flow-disrupting protrusion structures (312) are arranged in a matrix on the air dispersion plate (310), and a height of the flow-disrupting protrusion structures (312) is 0.2 to 0.5 times the distance between the shower head (200) and the air dispersion plate (310); The shower head (200) comprises a main pipeline (210) and a plurality of branch nozzles (220), wherein the plurality of branch nozzles (220) are respectively connected to one end of the main pipeline (210), and the other end of the main pipeline (210) is used to be connected to an external process gas source, and the plurality of branch nozzles (220) are evenly arranged on the upper chamber cover (100), and the branch nozzles (220) are arranged toward the gas diffusion plate (310); The spacing between adjacent flow-disturbing protrusion structures (312) is set in proportion to the distribution density of the branch nozzles (220).

2. The atomic deposition shower chamber according to claim 1, characterized in that: A gradually expanding flow channel is provided at the bottom end of the gas diffusion hole (311), and the cross-sectional area of ​​the gradually expanding flow channel increases gradually along the gas flow direction.

3. The atomic deposition shower chamber according to claim 1, characterized in that: The buffer layer (320) comprises a plurality of buffer plates (321) arranged in parallel, and the buffer layer (320) is configured to absorb and dissolve unstable energy in the airflow.

4. The atomic deposition shower chamber according to claim 1, characterized in that: The uniform plate (330) has a plurality of flow-guiding microchannels (331), and the plurality of flow-guiding microchannels (331) are connected to form a microchannel network.

5. The atomic deposition shower chamber according to any one of claims 1 to 4, characterized in that: The atomic deposition spray chamber also includes an electric field emission component; The electric field emission component is arranged in the lower cavity (500), and the electric field emission component is arranged toward the substrate (400) to construct an electrostatic field environment on the surface of the substrate (400).

6. The atomic deposition shower chamber according to any one of claims 1 to 4, characterized in that: The atomic deposition spray chamber further includes an exhaust passage (600); The exhaust passage (600) is arranged in the lower cavity (500), one end of the exhaust passage (600) is connected to a plurality of exhaust ports, and the plurality of exhaust ports are evenly arranged around the substrate (400), and the other end of the exhaust passage (600) is arranged at the bottom of the lower cavity (500) and connected to an external exhaust component.

7. An atomic deposition device, characterized in that The atomic deposition spray chamber comprises the atomic deposition spray chamber according to any one of claims 1 to 6.

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