Doping gas regulation device and regulation method for wafer production

Abstract

The application provides a wafer production doping gas regulation device and regulation method, and belongs to the technical field of wafer production. The wafer production doping gas regulation device comprises a reaction bin, a tray and a plurality of wafers arranged on the tray, and further comprises a partition plate, a detection module, a heating module, an air inlet module and a control unit. Through the arrangement of the heating assembly, when the third temperature sensor detects that the temperature reaches the reaction temperature and the fourth temperature sensor detects that the temperature reaches the reaction temperature, the central processing unit can control the bidirectional electric screw rod module to reverse; when the third temperature sensor detects that the temperature does not reach the reaction temperature and the fourth temperature sensor detects that the temperature reaches the reaction temperature, the central processing unit can control the bidirectional electric screw rod module to positively rotate; the bidirectional electric screw rod module can be positively or reversely rotated through the temperature distribution of the wafer, the heating position of the corresponding heating rod can be adjusted, and the uniformity of the wafer surface temperature is improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of wafer production, and particularly relates to a doping gas regulation device and method for wafer production. BACKGROUND

[0002] Wafer manufacturing is a high-precision and high-tech manufacturing process, which is one of the most critical links in the semiconductor chip industry. Epitaxial growth refers to growing a single crystal layer with certain requirements on a single crystal substrate (wafer), which has the same crystal orientation as the substrate. There are various methods for growing epitaxial layers, but the most commonly used method is chemical vapor deposition (CVD) process. Through hydrogen carrying silicon tetrachloride or trichlorosilane, silane or dichlorosilane, process gas is formed and enters the reaction chamber containing the silicon substrate. High-temperature chemical reaction is carried out in the reaction chamber to reduce or thermally decompose the silicon-containing reaction gas. The generated silicon atoms are deposited on the substrate silicon surface to form an epitaxial layer.

[0003] A Chinese patent with application number CN202410924237.2 discloses a vapor deposition device and a wafer temperature regulation method thereof, which relates to the technical field of semiconductor equipment. The vapor deposition device includes a tray, a chamber top cover, and a flow guide plate. The flow guide plate is arranged between the tray and the chamber top cover and opposite to the tray. The flow guide plate and the tray form a reaction area, and the flow guide plate and the chamber top cover form a temperature regulation area. A control unit adjusts the thermal conductivity of the heat transfer gas injected into the temperature regulation area based on the radial temperature distribution of the wafer. The wafer includes a central region and an edge region surrounding the central region. The flow guide plate includes an annular intermediate region corresponding to the position of the central region. The temperature variation amplitude of the annular intermediate region is greater than that of other regions of the flow guide plate before and after adjusting the thermal conductivity of the heat transfer gas. The invention can effectively improve the uniformity of the wafer surface temperature, ensure that the physical and chemical properties of the film grown on the wafer surface meet the process requirements, and greatly improve the yield of wafer processing.

[0004] However, when the wafer is heated, the edge of the wafer is directly exposed to the environment of the reaction chamber. The heat loss of the wafer edge through radiation and convection is faster than that of the central region of the wafer, resulting in uneven heating of the wafer and uneven deposition of the wafer surface film. In the process of doping gas, if the process gas is directly injected into the reaction chamber, the lower temperature process gas will break the temperature environment inside the reaction chamber, affecting the reaction efficiency. The process gas can be heated to a certain temperature by a preheater before being injected into the reaction chamber, but the temperature of the preheated process gas will be lost during transportation, resulting in the gas entering the reaction chamber not reaching the required preheating temperature, which will also affect the efficiency.

[0005] Therefore, in order to solve the above problems, a doping gas regulation device and method for wafer production are needed. SUMMARY

[0006] The present application aims to provide a wafer production doping gas regulation device and regulation method, aiming to solve the problem that in the prior art, when the wafer is heated, the edge of the wafer is directly exposed to the environment of the reaction chamber, the heat loss speed through radiation and convection is faster than that of the center area of the wafer, resulting in uneven heating of the wafer itself and uneven deposition thickness of the wafer surface film, and in the process of doping gas, if the process gas is directly injected into the reaction chamber, the lower temperature process gas will break the temperature environment inside the reaction chamber, affecting the reaction efficiency, the doping process gas can be heated to a certain temperature by the preheater before being injected into the reaction chamber, but the preheated process gas will lose temperature during transportation, resulting in that the gas entering the reaction chamber cannot reach the required preheating temperature, also affecting the work efficiency.

[0007] To achieve the above object, the present application provides the following technical scheme:

[0008] A wafer production doping gas regulation device, comprising a reaction bin, a tray and a plurality of wafers arranged on the tray, further comprising:

[0009] A partition plate fixedly connected to the inner wall of the reaction bin, capable of separating the interior of the reaction bin into a heating cavity and a reaction cavity, and a flow guide cavity is formed in the interior of the partition plate;

[0010] A detection module, comprising a first detection unit and a second detection unit, the first detection unit is used for detecting the temperature of the process gas in the heating cavity and the reaction cavity, and the second detection unit is used for detecting the radial temperature distribution of the wafer;

[0011] A heating module for heating the wafer on the tray;

[0012] An air inlet module, comprising a first air inlet unit and a second air inlet unit, the first air inlet unit can preheat the process gas and inject it into the heating cavity, and the second air inlet unit can inject the heat-conducting gas into the flow guide cavity;

[0013] A control unit, capable of adjusting the temperature of the heat-conducting gas injected into the flow guide cavity by the second air inlet unit based on the gas temperature result detected by the first detection unit, and capable of adjusting the heating position of the wafer by the heating module based on the temperature result of the wafer detected by the second detection unit.

[0014] Preferably, the partition plate is internally provided with a gas inlet pipe connecting the heating cavity and the reaction cavity, the first detection unit comprises a first temperature sensor arranged in the heating cavity and a second temperature sensor arranged in the reaction cavity, the first temperature sensor is used for detecting the temperature of the process gas entering the reaction cavity from the heating cavity, and the second temperature sensor is used for detecting the temperature of the process gas in the reaction cavity, the second detection unit comprises a third temperature sensor and a fourth temperature sensor arranged at the bottom of the partition plate, and the wafer comprises a center region and an edge region, and the third temperature sensor and the fourth temperature sensor can detect the temperatures of the center region and the edge region of the wafer respectively.

[0015] Preferably, the heating module comprises a plurality of heating assemblies arranged at the bottom of the tray, the plurality of heating assemblies correspond to the positions of the plurality of wafers one by one, each of the plurality of heating assemblies comprises at least four heating rods, two of the heating rods close to each other are used for heating the center region of the wafer, and two of the heating rods far away from each other are used for heating the edge region of the wafer, and the bottom of each of the plurality of heating assemblies is provided with a bidirectional electric screw rod module, and the bidirectional electric screw rod module is started to drive two of the heating rods close to each other in the corresponding heating assembly to move in the direction of moving away from or moving close to each other.

[0016] Preferably, the first gas inlet unit comprises a preheating device and a gas inlet device, the process gas is heated to a preheating value by the preheating device, and then is injected into the interior of the heating cavity through the gas inlet device, the second gas inlet unit comprises an adjusting device and a circulating device, the heat-conducting gas is composed of a first mixed gas and a second mixed gas, the first mixed gas and the second mixed gas are mixed to form the heat-conducting gas by the adjusting device, and the heat-conducting gas enters the interior of the circulating device through the flow guide cavity and is reused, the temperature of the first mixed gas is higher than that of the second mixed gas, the mixing ratio of the first mixed gas and the second mixed gas can be adjusted by the adjusting device, and the temperature of the heat-conducting gas can be adjusted.

[0017] Preferably, the control unit comprises a central processing unit, the central processing unit can control the preheating temperature of the preheating device, the central processing unit can control the adjusting device to adjust the mixing ratio of the first mixed gas and the second mixed gas, the central processing unit can receive and process the detection values of the first temperature sensor, the second temperature sensor, the third temperature sensor and the fourth temperature sensor, and the central processing unit can control the working state of each of the bidirectional electric screw rod modules.

[0018] A kind of wafer production regulation method: by the central processing unit set process gas reaction temperature, when third temperature sensor detects the temperature corresponding to wafer center area reaches reaction temperature, and fourth temperature sensor detects the temperature corresponding to wafer edge area does not reach reaction temperature, the central processing unit can control corresponding bidirectional electric screw rod module reverse, can make corresponding two heating rods in the heating assembly that are close to each other move towards the direction that is far away from each other, can be contacted with two heating rods that are far away from each other respectively.

[0019] Preferably, when two heating rods in the heating assembly that are close to each other are contacted with two heating rods that are far away from each other, if third temperature sensor detects the temperature corresponding to wafer center area does not reach reaction temperature, and fourth temperature sensor detects the temperature corresponding to wafer edge area reaches reaction temperature, the central processing unit can control corresponding bidirectional electric screw rod module positive rotation, can make two heating rods in the heating assembly that are close to each other and are contacted with two heating rods that are far away from each other move towards the direction that is close to each other, reheat the center area of wafer.

[0020] Preferably, when first temperature sensor detects that the temperature of process gas entering the inside of reaction cavity is lower than preheating temperature, the central processing unit can control adjusting device to increase the proportion of first mixed gas, reduce the proportion of second mixed gas, can improve the temperature of heat-conducting gas.

[0021] Preferably, when first temperature sensor detects that the temperature of process gas entering the inside of reaction cavity is higher than preheating temperature, the central processing unit can control adjusting device to reduce the proportion of first mixed gas, increase the proportion of second mixed gas, can reduce the temperature of heat-conducting gas.

[0022] Preferably, by the central processing unit sets temperature threshold, when second temperature sensor detects that the temperature of process gas in the inside of reaction cavity is higher than temperature threshold, the central processing unit can control preheating device to reduce preheating temperature, the central processing unit can control adjusting device to adjust the mixing proportion of first mixed gas and second mixed gas, can reduce the temperature of heat-conducting gas, can cool down the process gas in the inside of heating.

[0023] Compared with prior art, the beneficial effects of the present application are:

[0024] 1、The present application through the heating assembly setting, when the third temperature sensor detects the corresponding wafer center area temperature reaches the set reaction temperature, and the fourth temperature sensor detects the corresponding wafer edge area temperature does not reach the set reaction temperature, the central processing unit can control the bidirectional electric screw rod module to reverse, can make the corresponding heating rod in the corresponding heating assembly change the heating position, can move from the center area to the edge area, can improve the efficiency of the edge area heating, when detecting the wafer again, when the third temperature sensor detects the corresponding wafer center area temperature does not reach the set reaction temperature, and the fourth temperature sensor detects the corresponding wafer edge area temperature reaches the set reaction temperature, the central processing unit can control the bidirectional electric screw rod module to positive rotation, can make the corresponding heating rod in the corresponding heating assembly move in the direction of mutual separation, reheat the center area of the wafer, so that the temperature distribution of the wafer can be controlled by the bidirectional electric screw rod module to reverse, the heating position of the corresponding heating rod can be adjusted, the uniformity of the wafer surface temperature can be improved, and the quality of the epitaxial layer growth can be improved.

[0025] 2、The present application through the setting of the adjusting device, when the first temperature sensor detects that the temperature of the process gas entering the inside of the reaction cavity is higher than the preheating temperature, the central processing unit controls the adjusting device to reduce the proportion of the first mixed gas and increase the proportion of the second mixed gas, so that the whole heat conducting gas is cooled, and the process gas in the heating cavity can be cooled, when the first temperature sensor detects that the temperature of the process gas entering the inside of the reaction cavity is lower than the preheating temperature, the central processing unit controls the adjusting device to increase the proportion of the first mixed gas and reduce the proportion of the second mixed gas, so that the whole heat conducting gas is heated, and the process gas in the heating cavity can be heated, so that the proportion of the first mixed gas and the second mixed gas in the adjusting device is adjusted, the temperature of the heat conducting gas is adjusted, the temperature loss in the process gas transportation is compensated, the process gas injected from the inside of the heating cavity into the inside of the reaction cavity reaches the preheating temperature, the heating time is shortened, and the reaction efficiency is improved.

[0026] 3、The present application through the setting of the second temperature sensor, when the second temperature sensor detects that the temperature of the process gas in the inside of the reaction cavity is higher than the temperature threshold value, the central processing unit can control the preheating device to reduce the preheating temperature, and at the same time control the proportion of the first mixed gas and the second mixed gas in the adjusting device, so that the temperature of the heat conducting gas is the same as the preheating temperature, the process gas entering the inside of the heating cavity can be cooled, and the cooled process gas enters the inside of the reaction cavity, can be neutralized with the gas in the inside of the reaction cavity, avoid the temperature of the process gas in the inside of the reaction cavity being higher than the temperature threshold value, and prevent the process gas from reacting and depositing at other positions in the inside of the reaction cavity. BRIEF DESCRIPTION OF DRAWINGS

[0027] The accompanying drawings are included to provide a further understanding of the application, and are incorporated in and constitute a part of the specification, illustrate embodiments of the application, and are used to explain the present application, but are not intended to limit the present application. In the drawings:

[0028] Figure 1 a flow chart of the present application;

[0029] Figure 2 a schematic diagram of the control device of the present application;

[0030] Figure 3 a structure distribution diagram of the center region and the edge region of the wafer of the present application;

[0031] Figure 4 a distribution schematic diagram of the third temperature sensor and the fourth temperature sensor of the present application.

[0032] In the drawings: 1, reaction chamber; 2, tray; 3, wafer; 31, center region; 32, edge region; 4, partition plate; 41, heating cavity; 42, reaction cavity; 43, flow guide cavity; 44, gas inlet pipe; 51, first temperature sensor; 52, second temperature sensor; 53, third temperature sensor; 54, fourth temperature sensor; 61, heating assembly; 62, heating rod; 63, bidirectional electric screw rod module; 71, preheating device; 72, gas inlet device; 73, adjusting device; 74, circulating device; 8, central processing unit. DETAILED DESCRIPTION

[0033] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0034] Embodiment one

[0035] There are various methods for wafer growth epitaxial layer, but the most commonly used method is chemical vapor deposition epitaxial process, that is, process gas enters the reaction chamber provided with a silicon substrate, high-temperature chemical reaction is carried out in the reaction chamber, the reaction gas is reduced or thermally decomposed, and the atoms generated are deposited on the surface of the substrate silicon to form an epitaxial layer. However, in this process, when the wafer is heated, the edge of the wafer is directly exposed to the environment of the reaction chamber, and the heat of the edge of the wafer is lost faster through radiation and convection than the center region of the wafer, resulting in uneven heating of the wafer, uneven deposition thickness of the wafer surface film, and affecting the quality of epitaxial layer growth.

[0036] Please refer to Figures 1 to 4As shown, the present application provides the following technical solutions: a wafer production doping gas regulation device, comprising a reaction bin 1, a tray 2 and a plurality of wafers 3 arranged on the tray 2, further comprising:

[0037] A partition plate 4 is fixedly connected to the inner wall of the reaction bin 1, which can separate the inside of the reaction bin 1 into a heating cavity 41 and a reaction cavity 42, and a flow guide cavity 43 is formed in the partition plate 4;

[0038] A detection module, the detection module comprises a first detection unit and a second detection unit, the first detection unit is used for detecting the temperature of the process gas inside the heating cavity 41 and the reaction cavity 42, and the second detection unit is used for detecting the radial temperature distribution of the wafer 3;

[0039] A heating module for heating the wafers 3 on the tray 2;

[0040] An air inlet module, the air inlet module comprises a first air inlet unit and a second air inlet unit, the first air inlet unit can preheat the process gas and inject it into the heating cavity 41, and the second air inlet unit can inject the heat-conducting gas into the flow guide cavity 43;

[0041] A control unit, the control unit can adjust the temperature of the heat-conducting gas injected into the flow guide cavity 43 by the second air inlet unit based on the gas temperature result detected by the first detection unit, and the control unit can adjust the heating position of the wafer 3 by the heating module based on the temperature result of the wafer 3 detected by the second detection unit.

[0042] The process gas is mixed by hydrogen carrying silicon tetrachloride or trichlorosilane, silane or dichlorosilane, etc.;

[0043] The tray 2 is usually sintered from graphite and has good thermal conductivity, and the bottom of the tray 2 is provided with a driving device (not shown in the figure), and the driving device can drive the tray 2 to rotate around the center of the tray 2, and a driving gas channel (not shown in the figure) is also arranged in the tray 2, and a certain pressure gas is introduced between the wafer 3 and the tray 2 through the driving gas channel, so that the wafer 3 can be lifted off the surface of the tray 2 and suspended at a certain height to rotate around the center, and the existing technology will not be repeated.

[0044] The regulation device further comprises an air extraction device for discharging the process gas and reaction by-products in the reaction cavity 42 which do not react, and the existing technology will not be repeated.

[0045] The inside of the partition plate 4 is provided with a gas inlet pipe 44 communicating with the heating cavity 41 and the reaction cavity 42, the second detection unit comprises a third temperature sensor 53 and a fourth temperature sensor 54 arranged at the bottom of the partition plate 4, and the wafer 3 comprises a central region 31 and an edge region 32, and the third temperature sensor 53 and the fourth temperature sensor 54 can detect the temperatures of the central region 31 and the edge region 32 of the wafer 3 respectively.

[0046] The heating module comprises a plurality of heating assemblies 61 arranged at the bottom of the tray 2, the plurality of heating assemblies 61 correspond to the positions of the plurality of wafers 3 one by one, each heating assembly 61 is composed of at least four heating rods 62, among which two heating rods 62 close to each other can heat the central region 31 of the wafer 3, and two heating rods 62 far away from each other can heat the edge region 32 of the wafer 3, and the bottom of each heating assembly 61 is provided with a bidirectional electric screw rod module 63, and the bidirectional electric screw rod module 63 is started to move the two heating rods 62 close to each other in the corresponding heating assembly 61 towards the direction of moving away from or close to each other.

[0047] The bidirectional electric screw rod module 63 is composed of a motor, a double-thread screw rod and two moving sliders, the two moving sliders are fixedly connected with the two heating rods 62 close to each other in the corresponding heating assembly 61, and the bidirectional electric screw rod module 63 is started to reverse, so that the two moving sliders on the double-thread screw rod are moved away from or close to each other, that is, the directions of the two moving sliders are opposite, and the heating rod 62 and the bidirectional electric screw rod module 63 are prior art, which will not be described here.

[0048] In the normal state, that is, when the equipment is not working, the two moving sliders in the bidirectional electric screw rod module 63 are in contact with each other, the two heating rods 62 close to each other in the heating assembly 61 can heat the central region 31 of the wafer, and the two heating rods 62 far away from each other can heat the edge region 32 of the wafer.

[0049] The control unit comprises a central processing unit 8, the central processing unit 8 can control the preheating temperature of the preheating device 71, the central processing unit 8 can control the adjusting device 73 to adjust the mixing ratio of the first mixed gas and the second mixed gas, the central processing unit 8 can receive and process the detection values of the first temperature sensor 51, the second temperature sensor 52, the third temperature sensor 53 and the fourth temperature sensor 54, and the central processing unit 8 can control the working state of each bidirectional electric screw rod module 63.

[0050] The central processing unit 8 is electrically connected with the preheating device 71, the bidirectional electric screw rod module 63, the adjusting device 73, the first temperature sensor 51, the second temperature sensor 52, the third temperature sensor 53 and the fourth temperature sensor 54, and the prior art will not be described here.

[0051] Before the process of wafer growth epitaxial layer, first through the central processing unit 8 set process gas reaction temperature, when the third temperature sensor 53 detects corresponding wafer 3 center area 31 temperature reaches the reaction temperature, and the fourth temperature sensor 54 detects corresponding wafer 3 edge area 32 temperature does not reach the reaction temperature, the central processing unit 8 can control corresponding bidirectional electric screw rod module 63 reverse, can make corresponding heating assembly 61 in two mutually close heating rod 62 to the direction of moving away from each other, can be respectively with two mutually away from the heating rod 62 contact.

[0052] When the heating assembly 61 in two mutually close heating rod 62 and two mutually away from the heating rod 62 contact, if the third temperature sensor 53 detects corresponding wafer 3 center area 31 temperature does not reach the reaction temperature, and the fourth temperature sensor 54 detects corresponding wafer 3 edge area 32 temperature reaches the reaction temperature, the central processing unit 8 can control corresponding bidirectional electric screw rod module 63 positive rotation, can make corresponding heating assembly 61 in two mutually close heating rod 62 to the direction of moving closer, reheat the center area 31 of wafer 3.

[0053] When the third temperature sensor 53 and the fourth temperature sensor 54 detection value reaches the reaction temperature of process gas, then corresponding heating assembly 61 in the heating rod 62 keeps the current heating position, no longer change;

[0054] When the wafer 3 surface reaches the reaction temperature, the process gas enters the inside of the reaction chamber 42, can contact with the wafer 3 surface, reaction, deposition to form epitaxial layer.

[0055] Because the edge of wafer 3 is directly exposed to the environment of the reaction chamber 42, the heat of the edge of wafer 3 is lost faster than the center area of wafer through radiation and convection, for this reason, first detect the temperature of the center area 31 of wafer 3, and because the two mutually close heating rod 62 in the heating assembly 61 to the direction of moving away from each other, can be respectively with two mutually away from the heating rod 62 contact, can change the heating position of corresponding heating assembly 61 in two mutually close heating rod 62, can move from the center area 31 to the edge area 32, can improve the heating efficiency of the edge area 32, lead to the temperature rise of the edge area 32, for this reason, detect the temperature of the edge area 32 of wafer 3.

[0056] As Figure 4As shown, the third temperature sensor 53 and the fourth temperature sensor 54 can always correspond to the center area 31 and the edge area 32 of the wafer 3, and when the tray 2 revolves and the wafer 3 rotates, the third temperature sensor 53 and the fourth temperature sensor 54 can detect the temperature of the center area 31 and the edge area 32 of different wafers 3 respectively, and by detecting the temperature distribution of the center area 31 and the edge area 32 of different wafers 3, the heating position of the two heating rods 62 close to each other in the corresponding heating assembly 61 on the wafer 3 can be adjusted to realize individual control and improve the uniformity of the temperature of each wafer 3.

[0057] For example, there are six wafers 3 on the tray 2, and then the third temperature sensor 53 and the fourth temperature sensor 54 can detect six groups of data when the tray 2 rotates one circle, and the third temperature sensor 53 and the fourth temperature sensor 54 can detect six groups of data again when the tray 2 rotates one circle again. Thus, through the rotation of the tray 2, intermittent detection of different wafers 3 can be realized, and each time the detection is performed, the central processing unit 8 can adjust the heating position of the heating rod 62 in the corresponding heating assembly 61 according to the detection results of the third temperature sensor 53 and the fourth temperature sensor 54 to improve the uniformity of the temperature of each wafer 3.

[0058] Before the process of wafer 3 epitaxial layer growth, the reaction temperature of process gas is set by the central processing unit 8. During the process, the third temperature sensor 53 and the fourth temperature sensor 54 respectively transmit the temperature values detected by the center area 31 and the edge area 32 of the wafer 3 to the central processing unit 8. When the third temperature sensor 53 detects that the temperature of the center area 31 of the wafer 3 reaches the set reaction temperature, while the fourth temperature sensor 54 detects that the temperature of the edge area 32 of the wafer 3 does not reach the set reaction temperature, the central processing unit 8 can control the bidirectional electric screw rod module 63 to reverse, so that the two heating rods 62 close to each other in the corresponding heating assembly 61 move away from each other and contact with the two heating rods 62 far away from each other, so that the heating rods 62 close to each other in the corresponding heating assembly 61 change the heating position, i.e. move from the center area 31 to the edge area 32, and improve the heating efficiency of the edge area 32. When the wafer 3 is detected again, the temperature of the edge area 32 of the wafer 3 will rise and the temperature of the center area 31 of the wafer 3 will decrease due to the contact between the two heating rods 62 close to each other in the corresponding heating assembly 61 and the two heating rods 62 far away from each other. When the third temperature sensor 53 detects that the temperature of the center area 31 of the wafer 3 does not reach the set reaction temperature, while the fourth temperature sensor 54 detects that the temperature of the edge area 32 of the wafer 3 reaches the set reaction temperature, the central processing unit 8 can control the bidirectional electric screw rod module 63 to rotate forward, so that the two heating rods 62 close to each other in the corresponding heating assembly 61 move away from each other, and reheat the center area 31 of the wafer. Thus, by controlling the bidirectional electric screw rod module 63 to rotate forward and reverse, the heating position of the two heating rods 62 is adjusted, the uniformity of the surface temperature of the wafer 3 is improved, and the quality of the epitaxial layer growth is improved.

[0059] In summary, the application, by the setting of the heating assembly 61, when the third temperature sensor 53 detects that the temperature of the center area 31 of the corresponding wafer 3 reaches the set reaction temperature, and the fourth temperature sensor 54 detects that the temperature of the edge area 32 of the corresponding wafer 3 does not reach the set reaction temperature, the central processing unit 8 can control the bidirectional electric screw rod module 63 to reverse, so that the corresponding heating rod 62 in the corresponding heating assembly 61 changes the heating position, and moves from the center area 31 to the edge area 32, so as to improve the heating efficiency of the edge area 32, when the wafer 3 is detected again, when the third temperature sensor 53 detects that the temperature of the center area 31 of the corresponding wafer 3 does not reach the set reaction temperature, and the fourth temperature sensor 54 detects that the temperature of the edge area 32 of the corresponding wafer 3 reaches the set reaction temperature, the central processing unit 8 can control the bidirectional electric screw rod module 63 to rotate in the positive direction, so that the corresponding heating rod 62 in the corresponding heating assembly 61 moves in the direction of moving away from each other, and re-heats the center area 31 of the wafer. Thus, the bidirectional electric screw rod module 63 can be controlled by the temperature distribution of the wafer 3 to reverse, the heating position of the corresponding heating rod 62 can be adjusted, the uniformity of the surface temperature of the wafer 3 can be improved, and the quality of the epitaxial layer growth can be improved.

[0060] Embodiment two

[0061] On the basis of the above-mentioned embodiment, in the process of doping the process gas, if the process gas is directly injected into the reaction chamber, the lower temperature process gas will break the temperature environment inside the reaction chamber, affecting the reaction efficiency. Therefore, the doped process gas can be heated to a certain temperature by a preheater before being injected into the reaction chamber, but the preheated process gas will lose temperature during transportation, resulting in that the gas entering the reaction chamber cannot reach the required preheating temperature, which will also affect the efficiency.

[0062] Please refer to Figures 1 to 4 As shown in the figure, the first detection unit includes a first temperature sensor 51 arranged inside the heating chamber 41 and a second temperature sensor 52 arranged inside the reaction chamber 42. The first temperature sensor 51 is used to detect the temperature of the process gas entering the reaction chamber 42, and the second temperature sensor 52 is used to detect the temperature of the process gas inside the reaction chamber 42.

[0063] As Figure 1 shown, the first temperature sensor 51 is arranged corresponding to the position of the gas inlet pipe 44, so as to improve the accuracy of detecting the temperature of the process gas entering the reaction chamber 42. Since the flow rate of the gas inlet and outlet of the reaction chamber 42 is fast, the temperature of the center of the reaction chamber 42 is lower than that of the center, so the second temperature sensor 52 is arranged at the bottom center of the partition plate 4, so as to improve the accuracy of detecting the temperature of the process gas inside the reaction chamber 42.

[0064] The first gas inlet unit comprises a preheating device 71 and a gas inlet device 72, the process gas is heated to a preheating value by the preheating device 71, and then is injected into the inside of the heating cavity 41 through the gas inlet device 72; the second gas inlet unit comprises an adjusting device 73 and a circulating device 74, the heat-conducting gas is composed of the first mixed gas and the second mixed gas, the first mixed gas and the second mixed gas can be mixed to form the heat-conducting gas by the adjusting device 73, and then the heat-conducting gas can pass through the flow guide cavity 43 and enter the inside of the circulating device 74 for reuse; the temperature of the first mixed gas is higher than that of the second mixed gas, and the mixing ratio of the first mixed gas and the second mixed gas can be adjusted by the adjusting device 73, so that the temperature of the heat-conducting gas can be adjusted.

[0065] The preheating temperature of the preheating device 71 can be controlled by the central processing unit 8.

[0066] The heat-conducting gas injected into the inside of the flow guide cavity 43 can conduct heat through the partition plate 4, heat the process gas entering the inside of the heating cavity 41, compensate the temperature, and make the process gas injected from the inside of the heating cavity 41 into the inside of the reaction cavity 42 reach the preheating temperature.

[0067] The adjusting device 73 can be a proportional valve, which adjusts the mixing ratio of the first mixed gas and the second mixed gas; the circulating device 74 can be a circulating gas separator, which separates the heat-conducting gas into the first mixed gas and the second mixed gas for reuse; the gas inlet device 72, the adjusting device 73 and the circulating device 74 are all prior art, and will not be described here.

[0068] The preheating device 71 can adopt a gas heater, the temperature of the process gas heated by the preheating device 71 should be lower than the temperature of the process gas when the reaction occurs, and a floating space of the temperature should be reserved, for example, the temperature of the process gas when the reaction occurs is 800℃, and then the temperature of the process gas heated by the preheating device 71 can be 750℃, and the floating space of the temperature is 50℃, which avoids that the preheating temperature is close to the reaction temperature, and prevents the process gas from reacting and depositing when preheating.

[0069] When the first temperature sensor 51 detects that the temperature of the process gas entering the inside of the reaction cavity 42 is lower than the preheating temperature, the central processing unit 8 can control the adjusting device 73 to increase the proportion of the first mixed gas and decrease the proportion of the second mixed gas, so as to increase the temperature of the heat-conducting gas.

[0070] When the first temperature sensor 51 detects that the temperature of the process gas entering the inside of the reaction cavity 42 is higher than the preheating temperature, the central processing unit 8 can control the adjusting device 73 to decrease the proportion of the first mixed gas and increase the proportion of the second mixed gas, so as to decrease the temperature of the heat-conducting gas.

[0071] It should be noted that before the wafer epitaxial layer growth process, the preheating temperature of the preheating device 71 needs to be set according to the reaction temperature of the process gas, and the proportion of the first mixed gas and the second mixed gas is adjusted by the adjusting device 73 to make the temperature of the heat conduction gas consistent with the preheating temperature. In use, although the preheating device 71 can heat the process gas to the required preheating temperature, when the process gas enters the inside of the heating cavity 41 from the gas inlet device 72, the temperature will be lost, resulting in that the process gas injected from the inside of the heating cavity 41 into the inside of the reaction cavity 42 cannot reach the preheating temperature, affecting the reaction efficiency. Therefore, the first detection unit is set, the temperature value detected by the first temperature sensor 51 is transmitted to the central processing unit 8, when the first temperature sensor 51 detects that the temperature of the process gas entering the inside of the reaction cavity 42 does not reach the preheating temperature, the central processing unit 8 can control the adjusting device 73 to adjust the proportion of the first mixed gas and the second mixed gas, when the first temperature sensor 51 detects that the temperature of the process gas entering the inside of the reaction cavity 42 is higher than the preheating temperature, the central processing unit 8 controls the adjusting device 73 to reduce the proportion of the first mixed gas and increase the proportion of the second mixed gas, so that the whole heat conduction gas is cooled down, which can cool down the process gas in the inside of the heating cavity 41, when the first temperature sensor 51 detects that the temperature of the process gas entering the inside of the reaction cavity 42 is lower than the preheating temperature, the central processing unit 8 controls the adjusting device 73 to increase the proportion of the first mixed gas and reduce the proportion of the second mixed gas, so that the whole heat conduction gas is heated up, which can heat up the process gas in the inside of the heating cavity 41. Thus, by detecting the temperature of the process gas entering the inside of the reaction cavity 42 through the first temperature sensor 51, the proportion of the first mixed gas and the second mixed gas entering the adjusting device 73 is adjusted, the temperature of the heat conduction gas is adjusted, the temperature loss in the transportation of the process gas is compensated, and it is ensured that the process gas injected from the inside of the heating cavity 41 into the inside of the reaction cavity 42 reaches the preheating temperature, the heating time is shortened, and the reaction efficiency is improved.

[0072] In summary, by adjusting the setting of the adjusting device 73, when the first temperature sensor 51 detects that the temperature of the process gas entering the inside of the reaction cavity 42 is higher than the preheating temperature, the central processing unit 8 controls the adjusting device 73 to reduce the proportion of the first mixed gas and increase the proportion of the second mixed gas, so that the whole heat-conducting gas is cooled, and the process gas in the heating cavity 41 is cooled. When the first temperature sensor 51 detects that the temperature of the process gas entering the inside of the reaction cavity 42 is lower than the preheating temperature, the central processing unit 8 controls the adjusting device 73 to increase the proportion of the first mixed gas and reduce the proportion of the second mixed gas, so that the whole heat-conducting gas is heated, and the process gas in the heating cavity 41 is heated. Thus, by detecting the temperature of the process gas entering the inside of the reaction cavity 42 through the first temperature sensor 51, the proportion of the first mixed gas and the second mixed gas entering the adjusting device 73 is adjusted, the temperature of the heat-conducting gas is adjusted, the temperature loss in the transportation of the process gas is compensated, the process gas injected from the inside of the heating cavity 41 into the inside of the reaction cavity 42 reaches the preheating temperature, the heating time is shortened, and the reaction efficiency is improved.

[0073] Embodiment Three

[0074] On the basis of the above-mentioned embodiments, since the temperature of the heating assembly is higher than the reaction temperature, the temperature of the wafer on the tray reaches the reaction temperature, and the process gas entering the inside of the reaction cavity is heated when it approaches the heating assembly. If the air extraction device is damaged at this time, the balance between the air intake and air exhaust in the inside of the reaction cavity is broken, and long-time use will make the temperature of the process gas in the inside of the reaction cavity higher, so that the process gas reacts and deposits at other positions in the inside of the reaction cavity, and the use of the equipment is affected.

[0075] Please refer to Figures 1 to 4 As shown in the figure, by setting a temperature threshold value through the central processing unit 8, when the second temperature sensor 52 detects that the temperature of the process gas in the inside of the reaction cavity 42 is higher than the temperature threshold value, the central processing unit 8 can control the preheating device 71 to reduce the preheating temperature, and the central processing unit 8 can control the adjusting device 73 to adjust the mixing proportion of the first mixed gas and the second mixed gas, so that the temperature of the heat-conducting gas is reduced, and the process gas in the heating cavity 41 is cooled.

[0076] By setting a temperature threshold value through the central processing unit 8, the temperature threshold value should be lower than the reaction temperature and higher than the preheating temperature, so as to ensure that the temperature of the process gas in the inside of the reaction cavity 42 is lower than the reaction temperature, and a temperature floating space is reserved. For example, when the reaction temperature is 800℃, the temperature threshold value can be set to 780℃, and a floating space of 20℃ is reserved, so as to always ensure that the temperature of the process gas in the inside of the reaction cavity 42 is lower than the reaction temperature.

[0077] It should be noted that, since the temperature of the heating assembly 61 is higher than the reaction temperature of the process gas, the surface temperature of the wafer 3 on the tray 2 is heated to the reaction temperature, causing the process gas entering the inside of the reaction chamber 42 to be heated when it approaches the heating assembly 61. If the exhaust equipment is damaged at this time, the balance between the intake and exhaust of the process gas in the inside of the reaction chamber 42 will be broken, causing the process gas in the inside of the reaction chamber 42 to be unable to be discharged. Long-term use will cause the temperature of the process gas in the inside of the reaction chamber 42 to be high, causing the process gas to react and deposit at other positions in the inside of the reaction chamber 42, affecting the use of the equipment. Therefore, a temperature threshold is set by the central processing unit 8. When the second temperature sensor 52 detects that the temperature of the process gas in the inside of the reaction chamber 42 is higher than the temperature threshold, the central processing unit 8 can control the preheating device 71 to reduce the preheating temperature, and at the same time control the proportion of the first mixed gas and the second mixed gas in the adjusting device 73, so that the temperature of the heat-conducting gas is the same as the preheating temperature, which can cool the process gas entering the inside of the heating chamber 41. The cooled process gas enters the inside of the reaction chamber 42, can neutralize and cool the gas in the inside of the reaction chamber 42, avoid the temperature of the process gas in the inside of the reaction chamber 42 being higher than the temperature threshold, and prevent the process gas from reacting and depositing at other positions in the inside of the reaction chamber 42.

[0078] In summary, by the setting of the second temperature sensor 52, when the second temperature sensor 52 detects that the temperature of the process gas in the inside of the reaction chamber 42 is higher than the temperature threshold, the central processing unit 8 can control the preheating device 71 to reduce the preheating temperature, and at the same time control the proportion of the first mixed gas and the second mixed gas in the adjusting device 73, so that the temperature of the heat-conducting gas is the same as the preheating temperature, which can cool the process gas entering the inside of the heating chamber 41. The cooled process gas enters the inside of the reaction chamber 42, can neutralize and cool the gas in the inside of the reaction chamber 42, avoid the temperature of the process gas in the inside of the reaction chamber 42 being higher than the temperature threshold, and prevent the process gas from reacting and depositing at other positions in the inside of the reaction chamber 42.

[0079] Finally, it should be noted that the above only describes the preferred embodiments of the present application and is not intended to limit the present application. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent replacements to some technical features. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A doping gas regulating device for wafer production, comprising a reaction chamber (1), a tray (2) and a plurality of wafers (3) arranged on the tray (2), characterized in that, Also include: The partition plate (4) is fixedly connected to the inner wall of the reaction bin (1), and can divide the inside of the reaction bin (1) into heating cavity (41) and reaction cavity (42) from top to bottom, and the inside of the partition plate (4) is provided with flow guide cavity (43); The detection module includes a first detection unit and a second detection unit, the first detection unit is used for detecting the temperature of the process gas in the heating cavity (41) and the reaction cavity (42), and the second detection unit is used for detecting the radial temperature distribution of the wafer (3); The heating module is used for heating the wafer (3) on the tray (2), and the wafer (3) is located in the reaction cavity (42); The gas inlet module includes a first gas inlet unit and a second gas inlet unit, the first gas inlet unit can preheat the process gas and inject it into the heating cavity (41), and the second gas inlet unit can inject the heat conducting gas into the flow guide cavity (43); The control unit can adjust the temperature of the heat conducting gas injected into the flow guide cavity (43) by the second gas inlet unit based on the gas temperature result detected by the first detection unit, and can adjust the heating position of the wafer (3) by the heating module based on the temperature result of the wafer (3) detected by the second detection unit; The inside of the partition plate (4) is provided with an air inlet pipe (44) communicating with the heating cavity (41) and the reaction cavity (42); The first gas inlet unit includes a preheating device (71) and a gas inlet device (72), the process gas is heated to a preheating value by the preheating device (71), and then injected into the inside of the heating cavity (41) through the gas inlet device (72), the second gas inlet unit includes an adjusting device (73) and a circulating device (74), the heat conducting gas is composed of a first mixed gas and a second mixed gas, the first mixed gas and the second mixed gas can be mixed into heat conducting gas by the adjusting device (73), can pass through the flow guide cavity (43) into the inside of the circulating device (74) and be reused, the temperature of the first mixed gas is higher than that of the second mixed gas, the mixing ratio of the first mixed gas and the second mixed gas can be adjusted by the adjusting device (73), so as to adjust the temperature of the heat conducting gas.

2. The apparatus for controlling a dopant gas for wafer production according to claim 1, wherein: The first detection unit includes a first temperature sensor (51) arranged in the heating cavity (41) and a second temperature sensor (52) arranged in the reaction cavity (42), the first temperature sensor is used for detecting the temperature of the process gas in the heating cavity (41) and the reaction cavity (42), the second temperature sensor (52) is used for detecting the temperature of the process gas in the reaction cavity (42), the second detection unit includes a third temperature sensor (53) and a fourth temperature sensor (54) arranged at the bottom of the partition plate (4), the wafer (3) includes a center area (31) and an edge area (32), the third temperature sensor (53) and the fourth temperature sensor (54) can detect the temperature of the center area (31) and the edge area (32) of the wafer (3) respectively.

3. The apparatus for controlling a dopant gas for wafer production according to claim 2, wherein: The heating module comprises a plurality of heating assemblies (61) arranged at the bottom of the tray (2), each of the plurality of heating assemblies (61) corresponds to a position of a wafer (3), each of the heating assemblies (61) comprises at least four heating rods (62), the middle two heating rods (62) are arranged close to each other and can heat the center area (31) of the wafer (3), and the outer two heating rods (62) are arranged away from each other and can heat the edge area (32) of the wafer (3), and the bottom of each of the heating assemblies (61) is provided with a bidirectional electric screw rod module (63), and the bidirectional electric screw rod module (63) is started to drive the middle two heating rods (62) of the corresponding heating assembly (61) to move away from or close to each other.

4. The apparatus for controlling a dopant gas for wafer production according to claim 3, wherein: The control unit comprises a central processing unit (8), the central processing unit (8) can control the preheating temperature of the preheating device (71), the central processing unit (8) can control the adjusting device (73) to adjust the mixing ratio of the first mixed gas and the second mixed gas, the central processing unit (8) can receive and process the detection values of the first temperature sensor (51), the second temperature sensor (52), the third temperature sensor (53) and the fourth temperature sensor (54), and the central processing unit (8) can control the working state of each bidirectional electric screw rod module (63) respectively.

5. A method for controlling a doping gas for wafer production, using the apparatus for controlling a doping gas for wafer production according to claim 4, characterized by: When the third temperature sensor (53) detects that the temperature of the center area (31) of the corresponding wafer (3) reaches the reaction temperature, and the fourth temperature sensor (54) detects that the temperature of the edge area (32) of the corresponding wafer (3) does not reach the reaction temperature, the central processing unit (8) can control the corresponding bidirectional electric screw rod module (63) to reverse, drive the middle two heating rods (62) of the corresponding heating assembly (61) to move away from each other, and respectively contact the outer two heating rods (62).

6. The method of claim 5, wherein: When the middle two heating rods (62) of the heating assembly (61) contact the two outer heating rods (62), if the third temperature sensor (53) detects that the temperature of the center area (31) of the corresponding wafer (3) does not reach the reaction temperature, and the fourth temperature sensor (54) detects that the temperature of the edge area (32) of the corresponding wafer (3) reaches the reaction temperature, the central processing unit (8) can control the corresponding bidirectional electric screw rod module (63) to rotate in the positive direction, drive the middle two heating rods (62) of the corresponding heating assembly (61) to move close to each other, and reheat the center area (31) of the wafer (3).

7. The method of claim 6, wherein: When the first temperature sensor (51) detects that the temperature of the process gas entering the inside of the heating cavity (41) is lower than the preheating temperature, the central processing unit (8) can control the adjusting device (73) to increase the proportion of the first mixed gas and reduce the proportion of the second mixed gas, so as to increase the temperature of the heat-conducting gas.

8. The method of claim 7, wherein: When the first temperature sensor (51) detects that the temperature of the process gas entering the inside of the heating cavity (41) is higher than the preheating temperature, the central processing unit (8) can control the adjusting device (73) to reduce the proportion of the first mixed gas and increase the proportion of the second mixed gas, so as to reduce the temperature of the heat-conducting gas.

9. The method of claim 8, wherein: The central processing unit (8) sets a temperature threshold value, when the second temperature sensor (52) detects that the temperature of the process gas in the inside of the reaction cavity (42) is higher than the temperature threshold value, the central processing unit (8) can control the preheating device (71) to reduce the preheating temperature, the central processing unit (8) can control the adjusting device (73) to adjust the mixing proportion of the first mixed gas and the second mixed gas, so as to reduce the temperature of the heat-conducting gas and cool the process gas in the inside of the heating cavity (41).

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