Preparation method of temperature-resistant low-dielectric BT resin for copper-clad plate

Abstract

The invention relates to the technical field of BT resin, in particular to a preparation method of temperature-resistant low-dielectric BT resin for a copper-clad plate. By preparing the temperature-resistant low-dielectric BT resin for the copper-clad plate, the problem that the performance of the BT resin is reduced under the condition that the specific temperature is relatively high is solved. Flaky silicon carbide and ribbon fiber porous boron nitride of two different structures are introduced into inorganic filler in the prepared BT resin, and the flaky silicon carbide and the ribbon fiber porous boron nitride generate a synergistic effect, so that the interface bonding force is enhanced, and the heat resistance is improved. Meanwhile, through three times of modification in the scheme, the compatibility is better, and the interface and dispersity are better, so that the heat resistance and low dielectric property of the BT resin are improved. In addition, the chemical corrosion resistance and the insulating property of the BT resin are enhanced, and finally the temperature-resistant low-dielectric BT resin for the copper-clad plate is obtained.

Description

Technical Field

[0001] The present invention relates to the technical field of BT resins, and particularly to a preparation method of a temperature-resistant and low-dielectric BT resin for copper clad laminates. Background Art

[0002] With the popularization of electronic devices and the continuous improvement of their functions, people's lives are increasingly inseparable from electronic devices, and the demand is increasing day by day. As a core material of electronic devices, copper clad laminates have received extensive attention, and higher requirements are put forward for the performance of copper clad laminates in high-temperature and insulating environments.

[0003] As a high-performance thermosetting material, BT resin has thermal stability and insulation properties. However, traditional BT resins still face problems of performance degradation in some extreme high-temperature environments and during high-frequency and high-speed transmission processes. Materials with low dielectric constants can reduce energy loss during signal transmission and improve signal transmission speed and efficiency. BT resin can achieve the characteristic of low dielectric constant through modification to meet the application requirements of high-frequency circuit boards. In the prior art, inorganic fillers are usually introduced to improve low dielectricity; however, there are defects such as poor dispersibility and poor compatibility, which will affect the mechanical properties of the overall BT resin.

[0004] Therefore, it is extremely necessary to prepare a temperature-resistant and low-dielectric BT resin for copper clad laminates. Summary of the Invention

[0005] The purpose of the present invention is to provide a preparation method of a temperature-resistant and low-dielectric BT resin for copper clad laminates to solve the problems raised in the above background art.

[0006] To solve the above technical problems, the present invention provides the following technical solutions:

[0007] A temperature-resistant and low-dielectric BT resin for copper clad laminates, wherein the temperature-resistant and low-dielectric BT resin comprises the following raw materials in parts by weight: 20-40 parts of xylene methane bismaleimide, 10-30 parts of bisphenol A cyanate ester, 1-5 parts of tetrafluorobutanediamide, 10-20 parts of modified inorganic filler, 30-50 parts of DMF solvent;

[0008] The modified inorganic filler comprises the following raw materials in parts by weight: 2-3 parts of silicon carbide, 5-6 parts of porous boron nitride, 0.3-0.5 parts of epoxy group silane coupling agent, 1.1-1.3 parts of triazine group silane coupling agent, 0.6-0.8 parts of 6-maleimidocaproic acid, 5-6 parts of ethanol solution.

[0009] The silicon carbide is in a flaky structure, and the porous boron nitride is in a strip structure. Two inorganic filler raw materials with different structures are cited in the present invention, namely flaky silicon carbide and porous boron nitride, to enhance the physical properties of BT resin such as heat resistance, hardness and wear resistance, and at the same time reduce the dielectric constant of the material to reduce the loss and interference during signal transmission, and broaden the application range of BT resin for preparing copper clad laminates; a strip fiber structure porous boron nitride is generated through reaction to improve the heat resistance and thermal conductivity of BT resin, and at the same time improve the mechanical properties such as strength, toughness and dispersibility. The combination of the two forms a three-dimensional network intercalated structure, which promotes the interaction and dispersion between the two fillers. Due to the different structures of the two fillers, a dense three-dimensional network structure is generated after the curing of BT resin, improving the low temperature-resistant and low dielectric properties.

[0010] Preferably, the preparation method of the modified inorganic filler is as follows:

[0011] S1: Wash the silicon carbide with hydrochloric acid solution to obtain silicon carbide A; modify the silicon carbide A with an epoxy group silane coupling agent to obtain modified silicon carbide;

[0012] S2: Mix the modified silicon carbide, porous boron nitride, 6-maleimidocaproic acid and ethanol solution, ball mill, dry and grind to obtain a pretreated inorganic filler;

[0013] S3: Modify the pretreated inorganic filler with a triazine group silane coupling agent to obtain a modified inorganic filler.

[0014] The present invention also employs three times of organic modification for the inorganic filler: The first modification is to modify the flaky silicon carbide in the inorganic filler with the epoxy group silane coupling agent KH-560. The epoxy group silane coupling agent KH-560 contains two different chemical functional groups. One end of it can react with the silanol groups on the surface of inorganic materials such as silicon carbide to form covalent bonds, and the other end can bond with organic materials such as resins. This dual bonding ability enables KH-560 to act as a "bridge" to firmly bond inorganic materials (such as silicon carbide) and organic materials (such as resins), thereby improving the interfacial bonding force of the composite material. The second modification is to introduce 6-maleimidocaproic acid during the preparation of the pretreated inorganic filler, which not only promotes the intercalation between flaky silicon carbide and porous boron nitride, but also increases the surface groups. Due to the presence of the "maleimide" group, the similar compatibility can be improved, and the carboxyl group contained can increase the interfacial property; thus increasing the fluidity and dispersibility of the inorganic filler in the BT resin. And the modification of this step is conducive to the third modification. The third modification is to introduce a triazine group silane coupling agent. The functional groups (such as amino group, epoxy group, etc.) on the triazine ring can form chemical bonds with the resin, enhance the interfacial bonding force, supplement the triazine groups in the BT resin raw material, and promote the affinity with subsequent xylene methane bismaleimide and bisphenol A cyanate ester. In this way, compared with the single direct grafting coupling agent modification, it has better dispersibility and resin interfacial property.

[0015] Preferably, the preparation method of the porous boron nitride is as follows:

[0016] Boric acid and melamine are sequentially added to deionized water, mixed evenly, heated to 90-95°C and stirred for 10-12 hours; cooled, filtered, and dried to obtain a white powder; it is calcined at 1000-1050°C for 4-5 hours in an ammonia atmosphere and cooled with the furnace to obtain porous boron nitride.

[0017] Preferably, the mass ratio of boric acid to melamine in the raw materials of the porous boron nitride is 1:(1-1.2).

[0018] Preferably, the preparation method of the triazine group silane coupling agent is as follows:

[0019] The epoxy group silane coupling agent and 3-amino-5,6-dimethyl-1,2,4-triazine are sequentially added to toluene, heated to 55-65°C and stirred for 6-8 hours, and toluene is removed by vacuum distillation to obtain the triazine group silane coupling agent.

[0020] Preferably, the mass ratio of the epoxy group silane coupling agent to 3-amino-5,6-dimethyl-1,2,4-triazine in the triazine group silane coupling agent is 2:(1-1.5).

[0021] Preferably, during the ball milling process, intermittent ball milling is carried out using ceramic grinding balls as the grinding medium. It grinds for 3 - 5 minutes and then pauses for 3 - 5 minutes, with a total grinding time of 1 - 2 hours.

[0022] Preferably, silicon carbide is washed with 3 - 4 mol / L hydrochloric acid, then washed with deionized water and dried to obtain silicon carbide A. Silicon carbide A is placed in an ethanol - aqueous solution, an epoxy - group silane coupling agent is added, acetic acid is used to adjust the pH to 4.0 - 4.5, and the temperature is raised to 50 - 60 °C for heating and stirring for 30 - 60 min. After cooling, centrifuging, washing, and drying, modified silicon carbide is obtained.

[0023] Preferably, the specific preparation method of the modified inorganic filler is as follows: The pretreated inorganic filler is placed in an ethanol - aqueous solution, a triazine - group silane coupling agent is added, acetic acid is used to adjust the pH to 4.0 - 4.5, and the temperature is raised to 50 - 60 °C for heating and stirring for 5 - 6 hours. After cooling, centrifuging, washing, and drying, the modified inorganic filler is obtained.

[0024] Preferably, a preparation method of a heat - resistant and low - dielectric BT resin for a copper - clad laminate includes the following steps:

[0025] Xylylene bis - maleimide, bisphenol A cyanate ester, and tetrafluorobutanediamide are successively added to a DMF solvent and stirred evenly. The temperature is raised to 110 - 120 °C for reaction for 4 - 6 hours; the temperature is lowered to 40 - 50 °C, and the modified inorganic filler is added; the temperature is raised to 80 - 90 °C and stirred for 2 - 3 hours, and then cooled to obtain the heat - resistant and low - dielectric BT resin.

[0026] Compared with the prior art, the beneficial effects achieved by the present invention are as follows: When the temperature is relatively high, the BT resin will undergo a thermal decomposition reaction in a high - temperature environment, generating volatile substances and gases. These decomposition products may cause bubbles, voids, or cracks inside the copper - clad laminate, resulting in a decrease in the insulation performance of the BT resin, thereby affecting its overall structure and performance and the application performance of the copper - clad laminate in high - frequency circuits. Therefore, in the solution, two different morphological structures of modified silicon carbide and porous boron nitride are introduced into the BT resin, and through the modification with a variety of coupling agents and organic compounds, the inorganic filler has better fluidity, dispersibility, and resin interfacial properties, further improving the mechanical strength, heat resistance, and low - dielectric properties of the composite material. Finally, the purpose of improving heat - resistance and low - dielectric is achieved. Specific Embodiments

[0027] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0028] It should be noted that the following parts are by mass, and there are no special restrictions on the purchasing manufacturers of all raw materials involved in the present invention. Exemplarily, it includes: in the following embodiments, silicon carbide has a flake structure, model 13081007431, purchased from Shanghai Kelaman Co., Ltd.; KH-560 has a purity of 99%, CAS number 2530-83-8, purchased from Hubei Fangde New Materials Co., Ltd.; boric acid has a purity of 99%, CAS number 10043-35-3, purchased from Shandong Zhengxing New Materials Co., Ltd.; melamine has a purity of 99.8%, CAS number 108-78-1, purchased from Shandong Jinshengrun Chemical Co., Ltd.; ammonia has a purity of 99.8%, CAS number 7664-41-7, purchased from Shanghai Rongtang Polymer Materials Co., Ltd.; 3-amino-5,6-dimethyl-1,2,4-triazine has a purity of 98%, CAS number 17584-12-2, purchased from Shanghai Yuanye Biotechnology Co., Ltd.; 6-maleimidocaproic acid has a purity of 98%, CAS number 55750-53-3, purchased from Liaoyang Hengye Chemical Co., Ltd.

[0029] The porous boron nitride has a ribbon structure, and its preparation method is as follows: Boric acid and melamine with a mass ratio of 1:1.1 are sequentially added to deionized water, mixed evenly, heated to 90 °C and stirred for 12 hours; cooled, filtered, and dried to obtain a white powder; it is calcined at 1000 °C for 4 hours in an ammonia atmosphere and cooled with the furnace to obtain porous boron nitride.

[0030] The preparation method of the triazine-based silane coupling agent is as follows: Epoxy-based silane coupling agent and 3-amino-5,6-dimethyl-1,2,4-triazine with a mass ratio of 2:1.2 are sequentially added to 35 parts of toluene, heated to 60 °C and stirred for 7 hours, and toluene is removed by vacuum distillation to obtain the triazine-based silane coupling agent.

[0031] Example 1: A preparation method of a heat-resistant and low-dielectric BT resin for copper clad laminates, comprising the following steps:

[0032] Step 1: S1: Prepare a 3 mol / L HCl solution; add 2.5 parts of silicon carbide to the HCl solution, stir at room temperature for 10 minutes, filter, wash until neutral, and dry at 110 °C for 8 hours to obtain silicon carbide A; place silicon carbide A in a 90 vol% ethanol aqueous solution, add 0.4 part of epoxy-based silane coupling agent KH560, adjust the pH = 4.1 with acetic acid, heat to 60 °C and heat for 60 min, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain modified silicon carbide;

[0033] S2: Mix the modified silicon carbide, 5.5 parts of porous boron nitride, 0.7 part of 6-maleimidocaproic acid, and 5.5 parts of 20 wt% ethanol solution, and ball mill: During the process, perform intermittent ball milling with ceramic grinding balls as the grinding medium, stop for 4 minutes every 5 minutes of grinding, and grind for a total of 2 hours; dry, grind through an 800-mesh sieve; obtain the pretreated inorganic filler;

[0034] S3: Place the pretreated inorganic filler in an ethanol aqueous solution of 90 vol%, add 1.2 parts of triazine-based silane coupling agent, adjust the pH = 4.1 using acetic acid, heat to 60 °C and stir for 6 hours, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain the modified inorganic filler;

[0035] Step 2: Add 30 parts of dimethylbenzene methane bismaleimide, 20 parts of bisphenol A cyanate ester, and 3 parts of tetrafluorobutanediamide to 40 parts of DMF solvent in sequence and stir evenly, heat to 115 °C and react for 4 - 6 hours; cool to 45 °C, add 15 parts of the modified inorganic filler; heat to 85 °C and stir for 2.5 hours, then cool to obtain the heat-resistant low-dielectric BT resin.

[0036] Example 2: A preparation method of a heat-resistant low-dielectric BT resin for a copper clad laminate, comprising the following steps:

[0037] Step 1: S1: Prepare a 3 mol / L HCl solution; add 2 parts of silicon carbide to the HCl solution, stir at room temperature for 10 minutes, filter, wash until neutral, and dry at 110 °C for 8 hours to obtain silicon carbide A; place silicon carbide A in an ethanol aqueous solution of 90 vol%, add 0.3 part of epoxy-based silane coupling agent KH560, adjust the pH = 4.2 using acetic acid, heat to 60 °C and stir for 30 min, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain the modified silicon carbide;

[0038] S2: Mix the modified silicon carbide, 5 parts of porous boron nitride, 0.6 part of 6-maleimidocaproic acid, and 5 parts of 20 wt% ethanol solution, and ball mill: During the process, perform intermittent ball milling with ceramic grinding balls as the grinding medium, stop for 3 minutes every 5 minutes of grinding, and grind for a total of 1 hour; dry, grind through an 800-mesh sieve; obtain the pretreated inorganic filler;

[0039] S3: Place the pretreated inorganic filler in an ethanol aqueous solution of 90 vol%, add 1.1 part of triazine-based silane coupling agent, adjust the pH = 4.1 using acetic acid, heat to 60 °C and stir for 5 hours, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain the modified inorganic filler;

[0040] Step 2: Add 20 parts of xylene methane bismaleimide, 10 parts of bisphenol A cyanate ester, and 1 part of tetrafluorobutane diamide into 30 parts of DMF solvent in sequence, stir evenly, heat up to 110 °C and react for 4 hours; cool down to 40 °C, add 10 parts of modified inorganic filler; heat up to 80 °C and stir for 2 hours, then cool down to obtain the temperature-resistant and low-dielectric BT resin.

[0041] Example 3: A preparation method of a temperature-resistant and low-dielectric BT resin for copper clad laminates, comprising the following steps:

[0042] Step 1: S1: Prepare 3 mol / L HCl solution; add 3 parts of silicon carbide into the HCl solution, stir at room temperature for 10 minutes, filter, wash until neutral, and dry at 110 °C for 8 hours to obtain silicon carbide A; place silicon carbide A in a 90 vol% ethanol aqueous solution, add 0.5 part of epoxy group silane coupling agent KH560, adjust the pH = 4.2 with acetic acid, heat up to 60 °C and stir for 60 min, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain modified silicon carbide;

[0043] S2: Mix the modified silicon carbide, 6 parts of porous boron nitride, 0.8 part of 6-maleimidocaproic acid, and 6 parts of 20 wt% ethanol solution, and ball mill: During the process, use ceramic grinding balls as the grinding medium for intermittent ball milling, stop for 5 minutes every 5 minutes of grinding, and grind for a total of 2 hours; dry and grind through an 800-mesh sieve; obtain the pretreated inorganic filler;

[0044] S3: Place the pretreated inorganic filler in a 90 vol% ethanol aqueous solution, add 1.3 parts of triazine-based silane coupling agent, adjust the pH = 4.1 with acetic acid, heat up to 60 °C and stir for 6 hours, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain the modified inorganic filler;

[0045] Step 2: Add 40 parts of xylene methane bismaleimide, 30 parts of bisphenol A cyanate ester, and 5 parts of tetrafluorobutane diamide into 50 parts of DMF solvent in sequence, stir evenly, heat up to 120 °C and react for 6 hours; cool down to 50 °C, add 20 parts of modified inorganic filler; heat up to 90 °C and stir for 3 hours, then cool down to obtain the temperature-resistant and low-dielectric BT resin.

[0046] Comparative Example 1: Taking Example 1 as a control, Comparative Example 1 was adjusted to: without using triazine-based silane coupling agent for treatment, and the rest of the processes remained unchanged. Specifically:

[0047] Step 1: S1: Prepare 3 mol / L HCl solution; add 2.5 parts of silicon carbide into the HCl solution, stir at room temperature for 10 minutes, filter, wash until neutral, dry at 110 °C for 8 hours to obtain silicon carbide A; place silicon carbide A in 90 vol% ethanol aqueous solution, add 0.4 part of epoxy group silane coupling agent KH560, adjust the pH = 4.1 with acetic acid, heat to 60 °C and heat for 60 min, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain modified silicon carbide; S2: Mix the modified silicon carbide, 5.5 parts of porous boron nitride, 0.7 part of 6-maleimidocaproic acid, and 5.5 parts of 20 wt% ethanol solution, ball milling: during the process, use ceramic grinding balls as the grinding medium for intermittent ball milling, stop for 4 minutes every 5 minutes of grinding, and grind for a total of 2 hours; dry and grind through an 800-mesh sieve to obtain pretreated inorganic filler; S3: Place the pretreated inorganic filler in 90 vol% ethanol aqueous solution, adjust the pH = 4.1 with acetic acid, heat to 60 °C and stir for 6 hours, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain modified inorganic filler;

[0048] Comparative Example 2: Taking Example 1 as a control, Comparative Example 1 was adjusted to: without using 6-maleimidocaproic acid for ball milling treatment, and the rest of the processes remained unchanged. Specifically:

[0049] Step 1: S1: Prepare 3 mol / L HCl solution; add 2.5 parts of silicon carbide into the HCl solution, stir at room temperature for 10 minutes, filter, wash until neutral, dry at 110 °C for 8 hours to obtain silicon carbide A; place silicon carbide A in 90 vol% ethanol aqueous solution, add 0.4 part of epoxy group silane coupling agent KH560, adjust the pH = 4.1 with acetic acid, heat to 60 °C and heat for 60 min, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain modified silicon carbide; S2: Mix the modified silicon carbide, 5.5 parts of porous boron nitride, and 5.5 parts of 20 wt% ethanol solution, ball milling: during the process, use ceramic grinding balls as the grinding medium for intermittent ball milling, stop for 4 minutes every 5 minutes of grinding, and grind for a total of 2 hours; dry and grind through an 800-mesh sieve to obtain pretreated inorganic filler; S3: Place the pretreated inorganic filler in 90 vol% ethanol aqueous solution, add 1.2 parts of triazine group silane coupling agent, adjust the pH = 4.1 with acetic acid, heat to 60 °C and stir for 6 hours, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain modified inorganic filler;

[0050] Comparative Example 3: Only add modified silicon carbide, and the rest of the processes remain unchanged. Specifically:

[0051] Step 1: S1: Prepare 3 mol / L HCl solution; add 2.5 parts of silicon carbide into the HCl solution, stir at room temperature for 10 minutes, filter, wash until neutral, dry at 110 °C for 8 hours to obtain silicon carbide A; place silicon carbide A in 90 vol% ethanol aqueous solution, add 0.4 part of epoxy group silane coupling agent KH560, adjust the pH = 4.1 with acetic acid, heat to 60 °C and heat for 60 min, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain modified silicon carbide; S2: Place the modified silicon carbide in 90 vol% ethanol aqueous solution, add 1.2 parts of triazine group silane coupling agent, adjust the pH = 4.1 with acetic acid, heat to 60 °C and heat with stirring for 6 hours, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain modified inorganic filler;

[0052] Comparative Example 4: Change the ratio of modified silicon carbide to porous boron nitride, and keep the rest of the process unchanged. Specifically:

[0053] Step 1: S1: Prepare 3 mol / L HCl solution; add 5.5 parts of silicon carbide into the HCl solution, stir at room temperature for 10 minutes, filter, wash until neutral, dry at 110 °C for 8 hours to obtain silicon carbide A; place silicon carbide A in 90 vol% ethanol aqueous solution, add 0.4 part of epoxy group silane coupling agent KH560, adjust the pH = 4.1 with acetic acid, heat to 60 °C and heat for 60 min, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain modified silicon carbide; S2: Mix the modified silicon carbide, 2.5 parts of porous boron nitride, 0.7 part of 6-maleimidocaproic acid, and 5.5 parts of 20 wt% ethanol solution, and ball mill: during the process, use ceramic grinding balls as the grinding medium for intermittent ball milling, stop for 4 minutes every 5 minutes of grinding, and grind for a total of 2 hours; dry and grind through an 800-mesh sieve; obtain pretreated inorganic filler; S3: Place the pretreated inorganic filler in 90 vol% ethanol aqueous solution, add 1.2 parts of triazine group silane coupling agent, adjust the pH = 4.1 with acetic acid, heat to 60 °C and heat with stirring for 6 hours, cool, centrifuge, wash, and dry at 120 °C for 8 hours to obtain modified inorganic filler;

[0054] Detection experiment: Cure the copper clad laminates prepared in Examples 1 to 3 and Comparative Examples 1 to 4 with heat-resistant low-dielectric BT resin at 220 °C to form materials, and detect their properties: (1) Conduct thermogravimetric analysis, use a thermogravimetric analyzer, and detect the temperature from room temperature to 800 °C; (2) Conduct a three-point bending experiment to detect the bending strength; (3) Use a broadband dielectric impedance relaxation spectrometer to conduct dielectric property tests, and the test frequency range is 103 - 106 Hz.

[0055] Table 1

[0056]

[0057] Result analysis: According to the data analysis in Table 1 above, it can be seen that through the modification of BT resin, the present invention effectively improves the high insulation performance and corrosion resistance of BT resin; under specific high temperature conditions, the BT resin can still maintain stable performance and low dielectric loss, that is, the present invention prepares a temperature-resistant low-dielectric BT resin for copper clad laminates.

[0058] Finally, it should be noted that the above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions recorded in the foregoing embodiments or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A preparation method of a heat-resistant and low-dielectric BT resin for copper clad laminates, characterized in that: The temperature-resistant low-dielectric BT resin comprises the following raw materials in parts by weight: 20-40 parts of xylene methane bismaleimide, 10-30 parts of bisphenol A cyanate ester, 1-5 parts of tetrafluorobutanediamide, 10-20 parts of modified inorganic filler, and 30-50 parts of DMF solvent; The modified inorganic filler comprises the following raw materials in parts by weight: 2-3 parts of silicon carbide, 5-6 parts of porous boron nitride, 0.3-0.5 part of epoxy group silane coupling agent, 1.1-1.3 parts of triazine group silane coupling agent, 0.6-0.8 part of 6-maleimidocaproic acid, and 5-6 parts of ethanol solution.

2. The preparation method of a heat-resistant and low-dielectric BT resin for copper clad laminates according to claim 1, characterized in that: The silicon carbide has a flaky structure, and the porous boron nitride has a banded structure.

3. The preparation method of a temperature-resistant and low-dielectric BT resin for a copper clad laminate according to claim 1, wherein: The preparation method of the modified inorganic filler is as follows: S1: Wash the silicon carbide with hydrochloric acid solution to obtain silicon carbide A; modify the silicon carbide A with an epoxy group silane coupling agent to obtain modified silicon carbide; S2: Mix the modified silicon carbide, porous boron nitride, 6-maleimidocaproic acid, and ethanol solution, ball mill, dry, and grind to obtain a pretreated inorganic filler; S3: Modify the pretreated inorganic filler with a triazine group silane coupling agent to obtain a modified inorganic filler.

4. The preparation method of a heat-resistant and low-dielectric BT resin for copper clad laminates according to claim 1, characterized in that: The preparation method of the porous boron nitride is as follows: Add boric acid and melamine to deionized water in sequence, mix evenly, heat up to 90-95 °C and stir for 10-12 hours; cool, filter, and dry to obtain a white powder; calcine it in an ammonia atmosphere at 1000-1050 °C for 4-5 hours, and cool with the furnace to obtain porous boron nitride.

5. The preparation method of a temperature-resistant and low-dielectric BT resin for a copper clad laminate according to claim 4, characterized in that: In the raw materials of the porous boron nitride, the mass ratio of boric acid to melamine is 1:(1-1.2).

6. The preparation method of a temperature-resistant and low-dielectric BT resin for copper clad laminates according to claim 1, wherein: The preparation method of the triazine group silane coupling agent is as follows: Add an epoxy group silane coupling agent and 3-amino-5,6-dimethyl-1,2,4-triazine to toluene in sequence, heat up to 55-65 °C and stir and react for 6-8 hours, and remove toluene by reduced pressure distillation to obtain a triazine group silane coupling agent.

7. The preparation method of a heat-resistant and low-dielectric BT resin for copper clad laminates according to claim 6, characterized in that: In the triazine group silane coupling agent, the mass ratio of the epoxy group silane coupling agent to 3-amino-5,6-dimethyl-1,2,4-triazine is 2:(1-1.5).

8. The preparation method of a temperature-resistant and low-dielectric BT resin for copper clad laminates according to claim 3, characterized in that: During the ball milling process, intermittent ball milling is carried out with ceramic grinding balls as the grinding medium, stopping for 3-5 minutes every 3-5 minutes of grinding, and grinding for a total of 1-2 hours.

9. The preparation method of a temperature-resistant and low-dielectric BT resin for copper clad laminates according to claim 3, characterized in that: The specific preparation method of the modified silicon carbide is as follows: Wash the silicon carbide with 3-4 mol / L hydrochloric acid, wash with deionized water, and dry to obtain silicon carbide A; place the silicon carbide A in an ethanol aqueous solution, add an epoxy group silane coupling agent, adjust the pH = 4.0-4.5 with acetic acid, heat up to 50-60 °C and heat and stir for 30-60 min, cool, centrifuge, wash, and dry to obtain modified silicon carbide; The specific preparation method of the modified inorganic filler is as follows: Place the pretreated inorganic filler in an ethanol aqueous solution, add a triazine group silane coupling agent, adjust the pH = 4.0-4.5 with acetic acid, heat up to 50-60 °C and heat and stir for 5-6 hours, cool, centrifuge, wash, and dry to obtain a modified inorganic filler.

10. The preparation method of a temperature-resistant and low-dielectric BT resin for copper clad laminates according to claim 1, characterized in that: It includes the following steps: Add xylene methane bismaleimide, bisphenol A cyanate ester, and tetrafluorobutanediamide into DMF solvent in sequence and stir evenly. Heat up to 110 - 120 °C and react for 4 - 6 hours; cool down to 40 - 50 °C, and add modified inorganic filler; heat up to 80 - 90 °C and stir for 2 - 3 hours, then cool down to obtain heat-resistant low-dielectric BT resin.

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