Preparation method of flexible DLC film

Abstract

The invention discloses a preparation method of a flexible DLC film. The preparation method comprises the following steps: depositing a dielectric material layer on the surface of a substrate; forming a nano hole structure on the surface of the dielectric material layer; and depositing a DLC film in the nanometer hole structure to obtain the flexible DLC film. According to the technical scheme, the flexible DLC film can be prepared.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film preparation, and particularly to a method for preparing a flexible DLC thin film. Background Art

[0002] DLC (Diamondlike Carbon) film is a kind of loose and disordered amorphous carbonaceous thin film, which has diamond-like hardness and biocompatibility, and can be used to construct biomedical materials. Among them, flexible DLC film is a new type of biomedical material, which can be used in fields such as tissue repair and surface coating of medical devices. The existing production methods mainly prepare hard DLC films by methods such as Physical Vapor Deposition (PVD, also known as Physical Vapor Deposition) or Chemical Vapor Deposition (CVD). However, these methods cannot prepare flexible DLC films. Summary of the Invention

[0003] The purpose of the embodiments of the present invention is to provide a method for preparing a flexible DLC thin film, which can prepare a flexible DLC thin film.

[0004] To achieve the above purpose, the embodiments of the present invention provide a method for preparing a flexible DLC thin film, including:

[0005] Depositing a dielectric material layer on the surface of a substrate;

[0006] Forming a nano-hole structure on the surface of the dielectric material layer;

[0007] Depositing a DLC film in the nano-hole structure to obtain a flexible DLC thin film.

[0008] Further, the depositing a dielectric material layer on the surface of a substrate specifically includes:

[0009] Depositing and forming a dielectric material layer on the surface of a substrate by using an ion beam deposition method; wherein, the deposition conditions include: a DC voltage of 200V, a radio frequency power of 200W, a deposition rate of 0.1 - 0.3 nm / s, and a deposition time of 25 - 30 min.

[0010] Further, the thickness of the dielectric material layer is 50 - 100 nm.

[0011] Further, the dielectric material layer is a SiO2 layer.

[0012] Further, the forming a nano-hole structure on the surface of the dielectric material layer specifically includes:

[0013] Etch on the surface of the dielectric material layer by using an ion beam etching method to form a nano-hole structure on the surface of the dielectric material layer; wherein, the etching conditions include: an ion beam energy of 200 eV, an etching time of 30 to 50 min, and an etching depth of 20 to 30 nm.

[0014] Further, depositing a DLC film in the nano-hole structure to obtain a flexible DLC thin film, specifically including:

[0015] Deposit a DLC film in the nano-hole structure by using a chemical vapor deposition method to obtain a flexible DLC thin film.

[0016] Compared with the prior art, the embodiment of the present invention provides a method for preparing a flexible DLC thin film. First, deposit a dielectric material layer on the surface of a substrate; then, form a nano-hole structure on the surface of the dielectric material layer; finally, deposit a DLC film in the nano-hole structure to obtain a flexible DLC thin film. The embodiment of the present invention can prepare a flexible DLC thin film, and the prepared flexible DLC thin film has the characteristics of being closely structured and flexible. Description of the Drawings

[0017] Figure 1 is a flowchart of a preferred embodiment of a method for preparing a flexible DLC thin film provided by the present invention. Detailed Embodiments

[0018] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art in the technical field of the present invention without making creative efforts belong to the protection scope of the present invention.

[0019] The embodiment of the present invention provides a method for preparing a flexible DLC thin film. Refer to Figure 1 As shown, it is a flowchart of a preferred embodiment of a method for preparing a flexible DLC thin film provided by the present invention. The method includes steps S11 to S13:

[0020] Step S11, deposit a dielectric material layer on the surface of a substrate;

[0021] Step S12, form a nano-hole structure on the surface of the dielectric material layer;

[0022] Step S13, deposit a DLC film in the nano-hole structure to obtain a flexible DLC thin film.

[0023] In specific implementation, first, a layer of dielectric material is coated on the surface of the substrate. For example, a layer of dielectric material layer can be deposited and formed on the surface of the substrate. Then, the surface of the dielectric material layer is processed to form a nano-porous structure. Finally, a DLC film is deposited in the nano-porous structure, and a flexible DLC thin film is correspondingly prepared and obtained.

[0024] In one alternative embodiment, the depositing the dielectric material layer on the surface of the substrate specifically includes:

[0025] A dielectric material layer is deposited and formed on the surface of the substrate by using an ion beam deposition method. Among them, the deposition conditions include: the DC voltage is 200V, the RF power is 200W, the deposition rate is 0.1 - 0.3nm / s, and the deposition time is 25 - 30min.

[0026] Specifically, in combination with the above embodiment, when depositing the dielectric material layer on the surface of the substrate, an ion beam deposition method can be adopted under the following deposition conditions: the DC voltage is 200V, the RF power is 200W, the deposition rate is 0.1nm / s - 0.3nm / s, and the deposition time is 25 minutes - 30 minutes, to deposit and form a layer of dielectric material layer on the surface of the substrate.

[0027] Exemplarily, the value of the deposition rate can be 0.1nm / s, 0.2nm / s or 0.3nm / s, and can also be set according to actual requirements. The embodiments of the present invention do not make specific limitations.

[0028] Exemplarily, the value of the deposition time can be 25 minutes, 26 minutes, 27 minutes, 28 minutes, 29 minutes or 30 minutes, and can also be set according to actual requirements. The embodiments of the present invention do not make specific limitations.

[0029] In one alternative embodiment, the thickness of the dielectric material layer is 50 - 100nm.

[0030] Specifically, in combination with the above embodiment, by adopting the above ion beam deposition method and deposition conditions, the thickness of the dielectric material layer deposited and formed on the surface of the substrate is in the range of 50 nanometers - 100 nanometers.

[0031] Exemplarily, the value of the thickness of the dielectric material layer can be 50 nanometers, 55 nanometers, 60 nanometers, 65 nanometers, 70 nanometers, 75 nanometers, 80 nanometers, 85 nanometers, 90 nanometers, 95 nanometers or 100 nanometers, and can also be set according to actual requirements. The embodiments of the present invention do not make specific limitations.

[0032] In one alternative embodiment, the dielectric material layer is a SiO2 layer.

[0033] Specifically, in combination with the above embodiments, the dielectric material used in the embodiments of the present invention may be SiO2. Correspondingly, the dielectric material layer deposited on the surface of the substrate is the SiO2 layer.

[0034] In one optional embodiment, forming a nano-hole structure on the surface of the dielectric material layer specifically includes:

[0035] Using an ion beam etching method to etch on the surface of the dielectric material layer to form a nano-hole structure on the surface of the dielectric material layer; wherein, the etching conditions include: the ion beam energy is 200 eV, the etching time is 30 - 50 min, and the etching depth is 20 - 30 nm.

[0036] Specifically, in combination with the above embodiments, when forming a nano-hole structure on the surface of the dielectric material layer, an ion etcher can be used. By adopting the ion beam etching method, under the following etching conditions: the ion beam energy is 200 eV, the etching time is 30 minutes to 50 minutes, and the etching depth is 20 nanometers to 30 nanometers, an etching treatment is performed on the surface of the dielectric material layer to form a nano-hole structure on the surface of the dielectric material layer.

[0037] Exemplarily, the value of the etching time can be 30 minutes, 31 minutes, 32 minutes, 33 minutes, 34 minutes, 35 minutes, 36 minutes, 37 minutes, 38 minutes, 39 minutes, 40 minutes, 41 minutes, 42 minutes, 43 minutes, 44 minutes, 45 minutes, 46 minutes, 47 minutes, 48 minutes, 49 minutes or 50 minutes, and can also be set according to actual needs. The embodiments of the present invention do not make specific limitations.

[0038] Exemplarily, the value of the etching depth can be 20 nanometers, 21 nanometers, 22 nanometers, 23 nanometers, 24 nanometers, 25 nanometers, 26 nanometers, 27 nanometers, 28 nanometers, 29 nanometers or 30 nanometers, and can also be set according to actual needs. The embodiments of the present invention do not make specific limitations.

[0039] In one optional embodiment, depositing a DLC film in the nano-hole structure to obtain a flexible DLC thin film specifically includes:

[0040] Using chemical vapor deposition to deposit a DLC film in the nano-hole structure to obtain a flexible DLC thin film.

[0041] Specifically, in combination with the above embodiments, when depositing a DLC film in the nano-hole structure, in a DLC deposition chamber, by adopting chemical vapor deposition, a DLC film can be deposited in the nano-hole structure, and a flexible DLC thin film is correspondingly prepared.

[0042] Combining all the above embodiments, the implementation process of this solution is described below through the first specific embodiment, including: (1) By using the ion beam deposition method, under the following deposition conditions: direct current voltage is 200V, radio frequency power is 200W, deposition rate is 0.1nm / s, and deposition time is 25min, a dielectric material layer with a thickness of 50nm is deposited on the surface of the substrate; (2) Using an ion etcher, by using the ion beam etching method, under the following etching conditions: ion beam energy is 200eV, etching time is 30min, and etching depth is 20nm, an etching process is carried out on the surface of the dielectric material layer to form a nano-hole structure on the surface of the dielectric material layer; (3) In the DLC deposition chamber, by using the chemical vapor deposition method, a DLC film is deposited in the nano-hole structure, and a flexible DLC thin film is correspondingly prepared.

[0043] Combining all the above embodiments, the implementation process of this solution is described below through the second specific embodiment, including: (1) By using the ion beam deposition method, under the following deposition conditions: direct current voltage is 200V, radio frequency power is 200W, deposition rate is 0.2nm / s, and deposition time is 28min, a dielectric material layer with a thickness of 75nm is deposited on the surface of the substrate; (2) Using an ion etcher, by using the ion beam etching method, under the following etching conditions: ion beam energy is 200eV, etching time is 40min, and etching depth is 25nm, an etching process is carried out on the surface of the dielectric material layer to form a nano-hole structure on the surface of the dielectric material layer; (3) In the DLC deposition chamber, by using the chemical vapor deposition method, a DLC film is deposited in the nano-hole structure, and a flexible DLC thin film is correspondingly prepared.

[0044] Combining all the above embodiments, the implementation process of this solution is described below through the third specific embodiment, including: (1) By using the ion beam deposition method, under the following deposition conditions: direct current voltage is 200V, radio frequency power is 200W, deposition rate is 0.3nm / s, and deposition time is 30min, a dielectric material layer with a thickness of 100nm is deposited on the surface of the substrate; (2) Using an ion etcher, by using the ion beam etching method, under the following etching conditions: ion beam energy is 200eV, etching time is 50min, and etching depth is 30nm, an etching process is carried out on the surface of the dielectric material layer to form a nano-hole structure on the surface of the dielectric material layer; (3) In the DLC deposition chamber, by using the chemical vapor deposition method, a DLC film is deposited in the nano-hole structure, and a flexible DLC thin film is correspondingly prepared.

[0045] In summary, for the preparation method of a flexible DLC film provided by an embodiment of the present invention, first, a dielectric material layer is deposited on the surface of a substrate; then, a nano-hole structure is formed on the surface of the dielectric material layer; and finally, a DLC film is deposited in the nano-hole structure to obtain a flexible DLC film. The embodiment of the present invention can prepare a flexible DLC film, and the prepared flexible DLC film has the characteristics of being tightly structured and flexible, and its surface can be decorated as required; at the same time, the preparation process of the embodiment of the present invention is simple and the cost is low, which is convenient for mass production.

[0046] The above are only the preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the technical principle of the present invention, several improvements and deformations can be made, and these improvements and deformations should also be regarded as the protection scope of the present invention.

Claims

1. A preparation method of a flexible DLC film, characterized in that, Comprising: Depositing a dielectric material layer on the surface of a substrate; Forming a nano-porous structure on the surface of the dielectric material layer; Depositing a DLC film in the nano-porous structure to obtain a flexible DLC thin film.

2. The preparation method of the flexible DLC film according to claim 1, wherein, The depositing of the dielectric material layer on the surface of the substrate specifically includes: Depositing and forming a dielectric material layer on the surface of the substrate by using an ion beam deposition method; wherein, the deposition conditions include: a DC voltage of 200V, a radio frequency power of 200W, a deposition rate of 0.1 - 0.3 nm / s, and a deposition time of 25 - 30 min.

3. The preparation method of the flexible DLC film according to claim 2, characterized in that, The thickness of the dielectric material layer is 50 - 100 nm.

4. The preparation method of the flexible DLC film according to any one of claims 1 to 3, characterized in that, The dielectric material layer is a SiO2 layer.

5. The preparation method of the flexible DLC film according to claim 1, wherein The forming of the nano-porous structure on the surface of the dielectric material layer specifically includes: Etching on the surface of the dielectric material layer by using an ion beam etching method to form a nano-porous structure on the surface of the dielectric material layer; wherein, the etching conditions include: an ion beam energy of 200 eV, an etching time of 30 - 50 min, and an etching depth of 20 - 30 nm.

6. The preparation method of the flexible DLC film according to claim 1, characterized in that, The depositing of the DLC film in the nano-porous structure to obtain a flexible DLC thin film specifically includes: Depositing a DLC film in the nano-porous structure by using a chemical vapor deposition method to obtain a flexible DLC thin film.

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