A method for detecting the adhesion of thin films deposited on PECVD chamber walls

Abstract

The present invention belongs to the field of semiconductor material manufacturing technology and provides a method for detecting the adhesion of thin films deposited on PECVD chamber walls. The method comprises the following steps: providing a PECVD chamber with a thin film deposited on the chamber wall; performing a first vacuuming process on the PECVD chamber, pumping the PECVD chamber to a first pressure, then transferring a particle sheet into the PECVD chamber, introducing a stabilizing gas to a second pressure, and bombarding the thin film with radio frequency; performing a second vacuuming process on the PECVD chamber, pumping the PECVD chamber to a third pressure, then transferring the particle sheet out of the PECVD chamber, and detecting the particle post-value on the particle sheet to determine the film adhesion. The method can rapidly assess the macroscopic adhesion stability of the PECVD chamber wall film and is particularly suitable for preventive maintenance in mass production environments, thereby avoiding problems of low film quality caused by poor film adhesion.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor material manufacturing and relates to a method for detecting the adhesion of a thin film deposited on a PECVD cavity wall. Background Art

[0002] As the size of key components in semiconductor integrated circuit chips continues to shrink, the requirements for particle size during the process are becoming increasingly stringent. Plasma chemical vapor deposition (PCVD) is primarily used to deposit interlayer dielectrics and passivation layers in semiconductor circuits. The amount of particles present in these layers can severely impact the quality of the resulting film, leading to circuit breaks or shorts, and consequently, impacting chip yield.

[0003] In order to ensure the stability of film formation, a thin film is generally deposited in the cavity (cavity wall / liner / SHD) in advance. This thin film may peel off, resulting in the problem of excessive large particles.

[0004] CN118756119A discloses a PECVD thin film deposition apparatus and method. By optimizing the structure of the deposition apparatus, the method achieves more uniform thin film deposition. However, the adhesion between the thin film and the substrate plays a crucial role in the performance and service life of the thin film. The properties of the thin film cannot be determined. If the film adhesion is poor, the film may fall off or delaminate during subsequent processing or actual use, resulting in excessive large particles, which seriously affects product quality and performance.

[0005] CN1711467A discloses a method for measuring adhesion strength. In this method, a laser pulse is applied directly to one of two layers of material, generating a shock wave at the interface; a sensor then detects ruptures at the interface. The adhesion strength at the interface between the two layers is determined based on the energy and wavelength of the laser pulse required to cause the rupture. This method requires the use of laser pulses, and the detection intensity is relatively high, making it difficult to apply to thin film adhesion testing in PECVD chambers.

[0006] In the detection method described in the above scheme, the cavity wall and the wafer surface are inconsistent, the adhesion cannot be fully characterized, and after the wafer fragments are removed and exposed to the atmosphere, the properties of the film may change, making it difficult to apply to the PECVD device. Therefore, there is an urgent need to develop a method for detecting the viscosity of the film deposited on the cavity wall of the PECVD device. Summary of the Invention

[0007] The purpose of the present invention is to provide a method for detecting the adhesion of thin films deposited on PECVD cavity walls. The present invention uses plasma bombardment to cause cavity wall films with poor adhesion to fall off. The number of particles generated by film peeling is monitored to infer the adhesion of the film. The macroscopic adhesion stability of PECVD cavity wall films can be quickly evaluated. The method is particularly suitable for preventive maintenance in mass production environments to avoid the problem of low film quality caused by poor film adhesion.

[0008] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0009] The present invention provides a method for detecting the adhesion of a thin film deposited on a PECVD chamber wall, the method comprising the following steps:

[0010] Providing a PECVD chamber with a thin film deposited on the chamber wall;

[0011] The particle sheet is introduced into the PECVD chamber, the PECVD chamber is subjected to a first vacuum treatment, the PECVD chamber is evacuated to a first pressure, the particle sheet is taken out of the PECVD chamber, a particle value of the particle sheet is measured, and the particle sheet is introduced into the PECVD chamber again;

[0012] The PECVD chamber is subjected to a second vacuum treatment. After the PECVD chamber is evacuated to a third pressure, the particle sheet is transferred out of the PECVD chamber, and the particle post-value on the particle sheet is detected to determine the film adhesion.

[0013] The present invention pre-measures the particle size of the particle sheet. After evacuating the PECVD chamber where the thin film is deposited, the particle sheet is introduced into the PECVD chamber. Nitrogen is then introduced to prevent residual gases in the chamber from interfering with subsequent plasma bombardment. The chamber pressure is then maintained within an appropriate range. Radio frequency (RF) is then activated to generate a plasma of a stable gas to bombard the thin film on the chamber wall. The present invention uses a stable gas as the plasma source for bombardment. The stable gas's chemical properties are stable, preventing interference from chemical reactions. The mechanical adhesion of the film is tested solely through physical bombardment, avoiding interference from the particle sheet caused by chemical reactions during the main deposition process. The stable gas plasma generates high-energy ions and free radicals that bombard the film on the chamber wall, creating stresses similar to those encountered in actual processes. Films with poor adhesion can be flaked off by the bombardment, and particles are carried by the airflow to the surface of the particle sheet (such as a silicon or quartz wafer) for deposition. After that, vacuum treatment can be performed to remove residual stable gases and suspended particles in the cavity, ensuring that there is no additional contamination when the particle sheet is transmitted. The particle post-value of the particle sheet is tested, and the adhesion of the film on the cavity wall is judged based on the particle pre-value and particle post-value. The more particles there are / the larger the size, the worse the film adhesion.

[0014] The particle sheet of the present invention does not form a film. Therefore, if the post-particle value is low after use, it can be reused. Before reuse, its pre-particle value is re-determined. This approach can greatly reduce the detection cost and eliminate the influence of process-generated particles, making the detection results more accurate.

[0015] Preferably, the film is prepared by the following method:

[0016] A gaseous deposition source is introduced into the PECVD chamber to a target pressure, and radio frequency is turned on for deposition processing to deposit a thin film on the PECVD chamber wall.

[0017] The film described in the present invention is of the same type as the film to be deposited after detection, and the present invention uses a conventional silicon-containing film.

[0018] Preferably, the film is a silicon nitride film, and the gaseous deposition source includes nitrogen, ammonia and silane. The flow rate of the nitrogen is 3500sccm~4500sccm, for example: 3500sccm, 3800sccm, 4000sccm, 4200sccm or 4500sccm, etc., not limited to the listed values, and other values ​​not listed within the numerical range are also applicable. The flow rate of the ammonia is 80sccm~140sccm, for example: 80sccm, 90sccm, 100sccm, 120sccm or 140sccm, etc., not limited to the listed values, and other values ​​not listed within the numerical range are also applicable. The flow rate of the silane is 250sccm~350sccm, for example: 250sccm, 280sccm, 300sccm, 320sccm or 350sccm, etc., not limited to the listed values, and other values ​​not listed within the numerical range are also applicable. Applicable, the high-frequency power is 600W~1000W, for example: 600W, 700W, 800W, 900W or 1000W, etc., not limited to the listed values, other values ​​not listed within the numerical range are also applicable, the electrode spacing is 350mil~450mil, for example: 350mil, 380mil, 400mil, 420mil or 450mil, etc., not limited to the listed values, other values ​​not listed within the numerical range are also applicable, the deposition temperature is 200℃~400℃, for example: 200℃, 250℃, 300℃, 350℃ or 400℃, etc., not limited to the listed values, other values ​​not listed within the numerical range are also applicable, the target pressure is 4torr~5torr, for example: 4torr, 4.2torr, 4.5torr, 4.8torr or 5torr, etc., not limited to the listed values, other values ​​not listed within the numerical range are also applicable.

[0019] Preferably, the film is a silicon oxide film, the gaseous deposition source includes nitrous oxide and silane, the flow rate of the nitrous oxide is 2000 sccm~2500 sccm, for example: 2000 sccm, 2200 sccm, 2300 sccm, 2400 sccm or 2500 sccm, etc., not limited to the listed values, other values ​​not listed within the numerical range are also applicable, the flow rate of the silane is 70 sccm~130 sccm, for example: 70 sccm, 80 sccm, 90 sccm, 100 sccm or 130 sccm, etc., not limited to the listed values, other values ​​not listed within the numerical range are also applicable, the high frequency power is 200 W~300 W, for example: 200 W, 220 W, 250 W, 280 W or 300 W, etc., not limited to the listed values. The values ​​are limited to the listed values, and other values ​​not listed within the numerical range are also applicable. The electrode spacing is 350mil~450mil, for example: 350mil, 380mil, 400mil, 420mil or 450mil, etc., not limited to the listed values, and other values ​​not listed within the numerical range are also applicable. The deposition temperature is 200℃~400℃, for example: 200℃, 250℃, 300℃, 350℃ or 400℃, etc., not limited to the listed values, and other values ​​not listed within the numerical range are also applicable. The target pressure is 2torr~3torr, for example: 2torr, 2.2torr, 2.5torr, 2.8torr or 3torr, etc., not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0020] By controlling the target pressure, the present invention can produce a film suitable for subsequent measurements. If the target pressure is too low, the film becomes denser (enhanced ion bombardment), but may introduce high internal stress (compression or tension), leading to an increased risk of subsequent spalling. This may increase the number of particles detected by the particle sheet. Because the spalled particles are likely to be smaller, subsequent particle post-value detection of the particle sheet becomes more difficult and less accurate. Excessive target pressure results in a loose film with poor adhesion, but lower stress, making the spalling of large particles easier to detect.

[0021] Controlling the deposition treatment conditions of the present invention within the above range can improve the film-substrate interface bonding strength and avoid the shedding of excessively large areas or fine particles during subsequent bombardment, which affects the detection accuracy.

[0022] Preferably, the first pressure is <20 mtorr.

[0023] Preferably, the particle sheet is placed on a heating plate and the front side of the particle sheet is separated from the film.

[0024] The front side of the particle sheet of the present invention is separated from the film, that is, the front side of the particle sheet does not contact the film to avoid the risk of fragments or hardware damage. The bombardment conditions are consistent and the positions where the particles fall are basically consistent. The particle sheet is set at the position where the particles are to fall, and it is ensured as much as possible that all the falling particles fall on the particle sheet.

[0025] The particle sheet used in the present invention is a silicon sheet and / or a quartz sheet with a smooth surface. The smooth surface of the particle sheet is conducive to the adsorption and counting of particles. The particle sheet can be reused, but its particle count value needs to be measured and recorded before use.

[0026] Preferably, the second pressure is 2 torr to 5 torr, for example, 2 torr, 2.5 torr, 3 torr, 4 torr or 5 torr, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0027] The second pressure of the present invention (i.e., the pressure of the stabilizing gas introduced) will affect the detection accuracy. If the pressure of the stabilizing gas introduced is too low, the ion mean free path is long, the ion energy is high, and the bombardment intensity is large. Excessive bombardment may cause unexpected damage to the film, resulting in a decrease in detection accuracy. If the pressure of the stabilizing gas introduced is too high, the generated plasma energy is low, the plasma density is high, the bombardment effect is poor, the sensitivity is reduced, and the film adhesion cannot be accurately judged.

[0028] Preferably, the high frequency power of the bombardment treatment is 600W~1000W, for example: 350mil, 380mil, 400mil, 420mil or 450mil, etc., not limited to the listed values, other values ​​not listed in this numerical range are also applicable, the flow rate of the stability gas is 3500sccm~4500sccm, for example: 3500sccm, 3800sccm, 4000sccm, 4200sccm or 4500sccm, etc., not limited to the listed values, this numerical range Other unlisted values ​​are also applicable. The electrode spacing is 350mil~450mil, for example: 350mil, 380mil, 400mil, 420mil or 450mil, etc., not limited to the listed values, other unlisted values ​​within this numerical range are also applicable. The deposition temperature is 200℃~400℃, for example: 200℃, 250℃, 300℃, 350℃ or 400℃, etc., not limited to the listed values, other unlisted values ​​within this numerical range are also applicable. The stabilizing gas includes nitrogen.

[0029] The power of the bombardment treatment described in the present invention will affect the accuracy of detection. If the power of the bombardment treatment is too low, the ion density is low, and the bombardment energy is weak, resulting in reduced detection accuracy. If the power of the bombardment treatment is too high, the ion density is high, and the energy is strong, sputtering and secondary deposition may be caused. Sputtering of thin films or substrate materials may contaminate the cavity and interfere with subsequent detection and analysis.

[0030] The stabilizing gas described in the present invention can also be helium and / or argon. However, argon is heavier than nitrogen. At the same RF power, argon plasma has a stronger ability to etch thin films and produces more particles. Helium is lighter than nitrogen. At the same RF power, argon plasma has a weaker ability to etch thin films and produces fewer particles. Nitrogen synergizes with RF power to ensure accurate detection results. Alternatively, argon and helium can be combined with appropriate RF power to achieve the same detection results.

[0031] Preferably, the third pressure is less than 20 mtorr.

[0032] Preferably, the determining of the film adhesion comprises:

[0033] The particle increment is obtained according to the difference between the post-particle value and the pre-particle value, wherein the particle increment=0, and the pull-off strength of the film is ≥30 MPa.

[0034] The particle increment = 1-5, 20MPa≤the pull-off strength of the film <30MPa.

[0035] The particle increment = 6~20, 15MPa≤the pull-off strength of the film <20MPa.

[0036] The particle increment = 21~50, 12MPa≤the pull-off strength of the film <15MPa.

[0037] The particle increment = 51~100, 10MPa≤the pull-off strength of the film <12MPa.

[0038] The particle increment is greater than 100, and the pull-off strength of the film is less than 10 MPa.

[0039] Compared with the prior art, the present invention has the following beneficial effects:

[0040] (1) The present invention uses plasma bombardment to cause the cavity wall film with poor adhesion to fall off. The adhesion of the film can be inferred by monitoring the number of particles generated by the film peeling. The macroscopic adhesion stability of the PECVD cavity wall film can be quickly evaluated and the areas with high incidence of peeling can be located. It is particularly suitable for preventive maintenance in mass production environments to avoid the problem of low film quality caused by poor film adhesion.

[0041] (2) The present invention simulates the deposition process to measure the particle changes of the particle sheet before and after deposition. First, the pre-particle value of the particle sheet is measured before the particle sheet is introduced into the chamber. The particle sheet is placed on a heating plate. Then, the film on the chamber is bombarded with a stable gas plasma. Here, only plasma bombardment is applied without the main deposition process. Then, after vacuuming, the post-particle value of the particle sheet is measured. By comparing the pre-particle value and the post-particle value, the adhesion of the film is judged. Conventional main deposition may produce additional particles. The present invention does not perform main deposition and uses stable gas for plasma bombardment, avoiding the interference of particles added by the reaction, making the results more accurate.

[0042] (2) The method of the present invention can accurately and quickly determine the adhesion and pull-off strength of the thin film deposited on the PECVD cavity wall based on the particle increment, without destroying the film. The adhesion of the film can be inferred by monitoring the number of particles generated by film peeling. The macroscopic adhesion stability of the PECVD cavity wall film can be quickly evaluated. It is particularly suitable for preventive maintenance in a mass production environment to avoid the problem of low film quality caused by poor film adhesion. DETAILED DESCRIPTION

[0043] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0044] The PECVD chamber described in the embodiments of the present invention deposits silicon nitride films by the following method:

[0045] In the PECVD chamber, a gaseous deposition source was introduced at a nitrogen flow rate of 4000 sccm, an ammonia flow rate of 120 sccm, and a silane flow rate of 300 sccm until the pressure in the PECVD chamber reached 4.5 Torr;

[0046] The radio frequency was turned on, and a thin film was deposited under the conditions of a high frequency power of 800 W, an electrode spacing of 400 mil, and a deposition temperature of 300° C. to obtain a silicon nitride thin film.

[0047] The PECVD chamber described in the embodiments of the present invention deposits silicon oxide films by the following method:

[0048] In the PECVD chamber, a gaseous deposition source was introduced at a flow rate of 2200 sccm of nitrous oxide and a flow rate of 120 sccm of silane until the pressure in the PECVD chamber reached 2.5 torr;

[0049] The radio frequency was turned on, and a thin film was deposited under the conditions of a high frequency power of 250 W, an electrode spacing of 400 mil, and a deposition temperature of 300° C. to obtain a silicon oxide thin film.

[0050] Example 1

[0051] This embodiment provides a method for detecting the adhesion of a thin film deposited on a PECVD chamber wall, the method comprising the following steps:

[0052] Measure the particle front value of the particle sheet and determine the position and number of particles on the particle sheet;

[0053] The PECVD chamber where the silicon nitride film was deposited was evacuated to a pressure of <20 mtorr. The pellets were then introduced into the PECVD chamber, and nitrogen was introduced into the chamber to a pressure of 4 torr. The film was bombarded at 800 W of RF power, a nitrogen flow rate of 4000 sccm, an electrode spacing of 400 mil, and a deposition temperature of 300°C.

[0054] The PECVD chamber is vacuumed again until the pressure is <20 mtorr, and then the particle sheet is transferred out of the PECVD chamber. The particle post-value on the particle sheet is detected to determine the adhesion of the film.

[0055] Example 2

[0056] This embodiment provides a method for detecting the adhesion of a thin film deposited on a PECVD chamber wall, the method comprising the following steps:

[0057] Measure the particle front value of the particle sheet and determine the position and number of particles on the particle sheet;

[0058] The PECVD chamber where the silicon nitride film is deposited is evacuated to a pressure of <20 mtorr. Then, the pellets are introduced into the PECVD chamber, nitrogen is introduced into the chamber to a pressure of 5 torr, and the film is bombarded at a high frequency power of 1000 W, a nitrogen flow rate of 4500 sccm, an electrode spacing of 450 mil, and a deposition temperature of 400°C.

[0059] The PECVD chamber is vacuumed again until the pressure is <20 mtorr, and then the particle sheet is transferred out of the PECVD chamber. The particle post-value on the particle sheet is detected to determine the adhesion of the film.

[0060] Example 3

[0061] This embodiment provides a method for detecting the adhesion of a thin film deposited on a PECVD chamber wall, the method comprising the following steps:

[0062] Measure the particle front value of the particle sheet and determine the position and number of particles on the particle sheet;

[0063] The PECVD chamber where the silicon nitride film was deposited was evacuated to a pressure of <20 mtorr. The pellets were then introduced into the PECVD chamber, and nitrogen was introduced into the chamber to a pressure of 2 torr. The film was bombarded at 600 W RF power, 3500 sccm nitrogen flow rate, 350 mil electrode spacing, and 200°C deposition temperature.

[0064] The PECVD chamber is vacuumed again until the pressure is <20 mtorr, and then the particle sheet is transferred out of the PECVD chamber. The particle post-value on the particle sheet is detected to determine the adhesion of the film.

[0065] Example 4

[0066] The only difference between this embodiment and embodiment 1 is that the pressure of the nitrogen gas introduced is 1 torr, and the other conditions and parameters are exactly the same as those in embodiment 1.

[0067] Example 5

[0068] The only difference between this embodiment and embodiment 1 is that the pressure of the nitrogen gas introduced is 6 torr, and the other conditions and parameters are exactly the same as those in embodiment 1.

[0069] Example 6

[0070] The only difference between this embodiment and embodiment 1 is that the high-frequency power of the bombardment treatment is 1200 W, and the other conditions and parameters are exactly the same as those in embodiment 1.

[0071] Example 7

[0072] The only difference between this embodiment and embodiment 1 is that the high-frequency power of the bombardment treatment is 500 W, and the other conditions and parameters are exactly the same as those in embodiment 1.

[0073] Comparative Example 1

[0074] This comparative example uses a new clean wafer to measure the grain size of the film.

[0075] Comparative Example 2

[0076] The only difference between this comparative example and Example 1 is that nitrogen is replaced by silane in the bombardment treatment of the film. Other conditions and parameters are exactly the same as those in Example 1.

[0077] Performance testing:

[0078] The particle increments obtained in the examples and comparative examples were calculated, and the actual pull-off strength of the film was tested using a pull-off tester. The test results are shown in Table 1:

[0079] Table 1

[0080]

[0081] As can be seen from Table 1 and Examples 1-7, the method of the present invention can accurately and quickly determine the adhesion and pull-off strength of different types of thin films deposited on the PECVD chamber wall based on the particle increment, without destroying the film. The adhesion of the film can be inferred by monitoring the number of particles generated by film peeling, and the macroscopic adhesion stability of the PECVD chamber wall film can be quickly evaluated. The method is particularly suitable for preventive maintenance in a mass production environment to avoid the problem of low film quality due to poor film adhesion.

[0082] By comparing Example 1 with Examples 4-5, it can be seen that in the method for detecting the adhesion of the PECVD chamber wall deposited film described in the present invention, the pressure of the nitrogen gas introduced will affect the detection accuracy. When the pressure of the nitrogen gas introduced is controlled at 2 torr to 5 torr, the detection accuracy is higher. If the pressure of the nitrogen gas introduced is too low, the ion mean free path is long, the ion energy is high, and the bombardment intensity is large, excessive bombardment may cause unexpected damage to the film, resulting in a decrease in detection accuracy. If the pressure of the nitrogen gas introduced is too high, the generated plasma energy is low, the plasma density is high, the bombardment effect is poor, the sensitivity is reduced, and the film adhesion cannot be accurately judged.

[0083] By comparing Example 1 with Examples 6-7, it can be seen that in the method for detecting the adhesion of the thin film deposited on the PECVD chamber wall described in the present invention, the power of the bombardment treatment will affect the detection accuracy. When the power of the bombardment treatment is controlled within 600W~1000W, the detection accuracy is higher. If the power of the bombardment treatment is too low, the ion density is low, and the bombardment energy is weak, resulting in reduced detection accuracy. If the power of the bombardment treatment is too high, the ion density is high, and the energy is strong, sputtering and secondary deposition may be triggered. The sputtering of the film or substrate material may contaminate the chamber and interfere with subsequent detection and analysis.

[0084] By comparing Example 1 and Comparative Example 1, it can be seen that in the present invention, while controlling the amount of added particles within an appropriate range, the added particles are on the surface of the wafer instead of being wrapped under a thin film, and their morphology can be easily seen. The detection accuracy is also high, and the detection accuracy is comparable to that of a film grown on a wafer. However, the wafer can be recycled, which greatly reduces costs.

[0085] By comparing Example 1 and Comparative Example 2, it can be seen that the present invention uses nitrogen plasma to bombard the film, only bombarding or nitriding the surface of the film, without introducing new deposits, and the peeling particles only come from the film itself. No pretreatment is required before bombardment, the detection speed is fast and will not cause damage to the equipment, and the detection accuracy is also high. Using other gaseous sources for bombardment may result in the problem of excessive or insufficient bombardment intensity, making accurate detection difficult.

[0086] The above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for detecting the adhesion of a thin film deposited on a PECVD chamber wall, characterized in that: The method comprises the following steps: Providing a PECVD chamber with a thin film deposited on the chamber wall; Measure the pre-granular value of the granular sheet; The PECVD chamber is subjected to a first vacuum treatment. After the PECVD chamber is evacuated to a first pressure, the particle sheet is introduced into the PECVD chamber, a stabilizing gas is introduced to a second pressure, and radio frequency is turned on to bombard the film. The PECVD chamber is subjected to a second vacuum treatment, and after the PECVD chamber is evacuated to a third pressure, the particle sheet is transferred out of the PECVD chamber, and the post-particle value of the particle sheet is detected, and the film adhesion is judged according to the post-particle value and the pre-particle value.

2. The method according to claim 1, wherein The film is prepared by the following method: A gaseous deposition source is introduced into the PECVD chamber to a target pressure, and radio frequency is turned on for deposition processing to deposit a thin film on the PECVD chamber wall.

3. The method according to claim 2, wherein The film is a silicon nitride film, and the gaseous deposition source includes nitrogen, ammonia and silane. The flow rate of the nitrogen is 3500sccm~4500sccm, the flow rate of the ammonia is 80sccm~140sccm, the flow rate of the silane is 250sccm~350sccm, the high-frequency power is 600W~1000W, the electrode spacing is 350mil~450mil, the deposition temperature is 200℃~400℃, and the target pressure is 4torr~5torr.

4. The method according to claim 2, wherein The film is a silicon oxide film, the gaseous deposition source includes nitrous oxide and silane, the flow rate of the nitrous oxide is 2000sccm~2500sccm, the flow rate of the silane is 70sccm~130sccm, the high-frequency power is 200W~300W, the electrode spacing is 350mil~450mil, the deposition temperature is 200℃~400℃, and the target pressure is 2torr~3torr.

5. The method according to claim 1, wherein The first pressure is <20 mtorr.

6. The method according to claim 1, wherein The particle sheet is placed on a heating plate and the front side of the particle sheet is separated from the film.

7. The method according to claim 1, wherein The second pressure is 2 torr to 5 torr.

8. The method according to claim 1, wherein The high-frequency power of the bombardment treatment is 600W~1000W, the flow rate of the stabilization gas is 3500sccm~4500sccm, the electrode spacing is 350mil~450mil, the deposition temperature is 200℃~400℃, and the stabilization gas includes nitrogen.

9. The method according to claim 1, wherein The third pressure is less than 20 mtorr.

10. The method according to claim 1, wherein The determination of film adhesion comprises: The particle increment is obtained according to the difference between the post-particle value and the pre-particle value, wherein the particle increment = 0, and the pull-off strength of the film is ≥ 30 MPa; The particle increment = 1-5, 20MPa≤film pull-off strength < 30MPa; The particle increment = 6 to 20, 15 MPa ≤ the pull-off strength of the film < 20 MPa; The particle increment = 21~50, 12MPa≤film pull-off strength <15MPa; The particle increment = 51~100, 10MPa≤film pull-off strength <12MPa; The particle increment is greater than 100, and the pull-off strength of the film is less than 10 MPa.

Images