Transfer device for copper plating pretreatment of silicon wafer

Abstract

The invention provides a transfer device for silicon wafer copper plating pretreatment, which is used for solving the problems that in the transfer process of a silicon wafer copper plating pretreatment link in the prior art, three technical challenges of oxidation control, cleanliness maintenance and surface integrity are faced, the surface quality of a silicon wafer film is seriously influenced, and the advanced process requirement of an integrated circuit is difficult to meet. The invention provides a transfer device for silicon wafer copper plating pretreatment. The transfer device comprises a rack, a pre-cleaning cavity, a vacuum transition cavity, an inert gas buffer cavity, a sealed copper plating wire and a silicon wafer circulating conveying mechanism. Through a three-stage sealed cavity structure from the pre-cleaning cavity to the inert gas buffer cavity and then to the vacuum transition cavity, the exposure time of a silicon wafer in the air is greatly shortened in a physical isolation mode, the silicon wafer is prevented from being oxidized before copper plating, and the surface quality of a film formed by the silicon wafer is ensured; the silicon wafer carrier and the blanking guide carrier frame are crossed and are not in contact, blanking is performed in the sealed copper-plated wire, the silicon wafer is conveyed in a non-contact manner, and lattice damage is prevented.

Description

Technical Field

[0001] The present invention relates to the technical field of anti-oxidation transfer of silicon wafers, and particularly to a transfer device for pre-treatment of copper plating on silicon wafers. Background Art

[0002] With the rise of modern 3D integration technology, the nano-process of integrated circuits has now entered the node below 7 nm, and the requirements for the surface quality of silicon wafers in the copper interconnect process have also approached the physical limit. However, the existing technology still faces three major technical problems in the transfer process of the pre-treatment link of copper plating on silicon wafers, namely oxidation control, cleanliness maintenance, and surface integrity, which seriously affect the surface quality of the silicon wafer film formation and are difficult to meet the requirements of advanced processes of integrated circuits.

[0003] Copper will form an insulating oxide layer under standard electrode potential, resulting in a sharp increase in the interconnect resistance. When traditional transfer equipment is exposed to air, an oxide layer is formed on the surface of the silicon wafer, destroying the heteroepitaxy of the copper thin film. The Chinese utility model patent "An anti-oxidation transfer device for the production of integrated circuit boards" with the publication number CN213078928U shows that by using the spray heads on the inner side walls of the first U-shaped plates to spray anti-oxidant on the two end faces of the integrated circuit board, the integrated circuit board can be protected against oxidation. However, due to the open structure design of its transfer device, the silicon wafer is exposed to air before the anti-oxidant is sprayed on the end face, and the oxygen permeability is difficult to control, so the interface oxidation cannot be completely solved. Moreover, the device uses mechanical transmission, and the space of the transmission drive mechanism is not isolated from the space of the silicon wafer. The friction particles generated by mechanical transmission will cause dust pollution on the surface of the silicon wafer, resulting in an increase in the defect density. Finally, the device clamps the integrated circuit board by controlling the distance between the movable block and the fixed block, squeezing and contacting the silicon wafer like a traditional fixture, which is easy to cause scratches and lattice damage, and increases the processing rate of the silicon wafer. Summary of the Invention

[0004] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a transfer device for pre-treatment of copper plating on silicon wafers, which is used to solve the problems that the existing technology faces three major technical challenges of oxidation control, cleanliness maintenance, and surface integrity in the transfer process of the pre-treatment link of copper plating on silicon wafers, seriously affecting the surface quality of the silicon wafer film formation and being difficult to meet the requirements of advanced processes of integrated circuits.

[0005] To achieve the above object and other related objects, the present invention provides a transfer device for pre-treatment of copper plating on silicon wafers, including: a frame, a pre-cleaning chamber and a vacuum transition chamber are installed on the left part of the frame, an inert gas buffer chamber is arranged between the pre-cleaning chamber and the vacuum transition chamber, a sealed copper plating line is installed on the upper part of the frame, and the pre-cleaning chamber, the inert gas buffer chamber, the vacuum transition chamber and the sealed copper plating line are fixedly communicated. A silicon wafer circulating transfer mechanism is installed between the pre-cleaning chamber, the inert gas buffer chamber and the vacuum transition chamber; Among them, the pre-cleaning chamber is used to remove particulate impurities on the surface of the silicon wafer with chemical liquid medicine; Among them, the inert gas buffer chamber is used to control the oxygen concentration in the space where the silicon wafer is located after the silicon wafer comes out of the pre-cleaning chamber, reducing the exposure time and exposure degree of a single silicon wafer; Among them, the vacuum transition chamber is used to provide a vacuum space for the transfer of the silicon wafer; Among them, the sealed copper plating wire is used to perform copper plating treatment on the silicon wafer; Among them, the silicon wafer circulating transfer mechanism is used to load the silicon wafer and drive the silicon wafer to flow between the pre-cleaning chamber, the inert gas buffer chamber and the vacuum transition chamber, and then transfer the silicon wafer into the sealed copper plating wire.

[0006] Optionally, the pre-cleaning chamber includes a front cleaning chamber, a rear cleaning transfer chamber, a first transfer guide rail groove, a first sealed installation groove, a liquid leakage prevention self-opening and closing component and a nitrogen curtain. The upper wall at the left end of the machine frame is provided with the front cleaning chamber and the rear cleaning transfer chamber, and the front cleaning chamber and the rear cleaning transfer chamber are fixedly connected front and back. A first transfer guide rail groove is opened on the connecting wall of the front cleaning chamber and the rear cleaning transfer chamber. A first sealed installation groove is opened at the lower right part of the right wall of the front cleaning chamber and the rear cleaning transfer chamber. The first sealed installation groove is internally provided with the liquid leakage prevention self-opening and closing component. A nitrogen curtain is arranged at the upper outlet of the front cleaning chamber.

[0007] Optionally, the inert gas buffer chamber includes a front gas buffer chamber, a rear buffer transfer chamber, a second transfer guide rail groove, a vacuum curtain and a plasma activator installation hole. The front gas buffer chamber and the rear buffer transfer chamber are respectively fixedly installed on the upper parts of the front cleaning chamber and the rear cleaning transfer chamber, and the front gas buffer chamber and the rear buffer transfer chamber are fixedly connected front and back. A second transfer guide rail groove is opened on the connecting wall of the front gas buffer chamber and the rear buffer transfer chamber. A vacuum curtain is installed at the right wall outlet of the front gas buffer chamber. A plasma activator installation hole is opened at the upper left corner of the rear wall of the rear buffer transfer chamber, and a plasma activator is installed in the plasma activator installation hole.

[0008] Optionally, the vacuum transition chamber includes a front transition chamber, a rear transition transfer chamber, a third transfer guide rail groove, a second sealed installation groove, a gas leakage prevention self-opening and closing component and a molecular pump installation hole. The right walls of the front gas buffer chamber and the rear buffer transfer chamber are fixedly communicated with the front transition chamber and the rear transition transfer chamber, and the right parts of the front transition chamber and the rear transition transfer chamber are fixedly arranged on the machine frame. A third transfer guide rail groove is opened on the connecting wall of the front transition chamber and the rear transition transfer chamber. A second sealed installation groove is opened at the lower left part of the front transition chamber and the rear transition transfer chamber. The second sealed installation groove is internally provided with the gas leakage prevention self-opening and closing component. A molecular pump installation hole is opened at the upper right corner of the rear wall of the rear transition transfer chamber, and a molecular pump is installed in the molecular pump installation hole.

[0009] Optionally, both the anti-leakage self-opening and closing component and the anti-air-leakage self-opening and closing component include a return spring, a pressing plate, and an elastic sealing block. A plurality of pairs of return springs are equidistantly installed on the upper and lower walls of the first sealing installation groove and the second sealing installation groove. A pressing plate is fixed between the outer ends of several of the return springs on the same side. The four pressing plates are divided into two groups of two and are respectively slidably installed in the first sealing installation groove and the second sealing installation groove. Elastic sealing blocks are fixed on the outer sides of the four pressing plates. The two elastic sealing blocks on the same vertical line are intermittently closed. The elastic sealing block is trapezoidal in a vertically inverted shape when viewed from the front. When the two elastic sealing blocks are closed, they are sealed with the front cleaning chamber and the front transition chamber. When the two elastic sealing blocks are closed, they form a triangular opening to the right.

[0010] Optionally, the first transfer guide rail groove, the second transfer guide rail groove, and the third transfer guide rail groove are connected and communicate with each other, and the first transfer guide rail groove, the second transfer guide rail groove, and the third transfer guide rail groove form a rectangular frame groove. Chamfers are provided at the four corners of the inner frame of the rectangular frame groove.

[0011] Optionally, the silicon wafer circulating transfer mechanism includes a positioning substrate, a loading stage, an auxiliary conveyor belt, a driving sprocket, a driven chain, a directional slider, a silicon wafer carrier, a pin, and a blanking guiding carrier. A positioning substrate is fixed between the lower part of the right wall of the front cleaning chamber and the lower part of the left wall of the front transition chamber. A loading stage is fixed on the upper part of the positioning substrate. An auxiliary conveyor belt is installed in the loading stage in a driving manner. A driving sprocket is respectively rotatably installed at the lower left corner of the rear cleaning transfer chamber, the upper left corner of the rear buffer transfer chamber, the upper right corner of the rear transition transfer chamber, and the lower part. A driven chain is sleeved between the four driving sprockets through chain drive. Fifteen directional sliders are equidistantly installed on the driven chain by fifteen pins. The fifteen directional sliders are all slidably installed in the first transfer guide rail groove, the second transfer guide rail groove, and the third transfer guide rail groove. A silicon wafer carrier is installed on the front wall of the fifteen directional sliders. When the silicon wafer carrier passes above the auxiliary conveyor belt, the silicon wafer is loaded by a manipulator. A blanking guiding carrier is fixed between the inner side of the front wall of the front transition chamber and the inner side of the front wall of the loading end of the sealed copper wire. The movement routes of the fifteen silicon wafer carriers intersect with the left end of the blanking guiding carrier. The blanking guiding carrier intermittently intersects with the silicon wafer carrier but does not contact it.

[0012] Optionally, the silicon wafer carrier includes a front-opening carrier frame, an extrusion guiding strip, and equidistant transfer carrier strips. The rear wall of the front-opening carrier frame is fixedly connected to the front wall of the directional slider. The front-opening carrier frame is a three-sided frame with an opening at the front. An extrusion guiding strip is provided at the left end of the front-opening carrier frame. The extrusion guiding strip is triangular when viewed from the front. The two sides on the left of the triangle are parallel to the sides of the triangular opening of the elastic sealing block. Eight equidistant transfer carrier strips are fixed in the front-opening carrier frame. The silicon wafers are intermittently placed on the eight equidistant transfer carrier strips in the front-opening carrier frame.

[0013] Optionally, the blanking guiding carrier includes a rear-opening carrier frame and equidistant blanking carrier bars. The front wall of the rear-opening carrier frame is fixedly connected to the inner side of the front wall of the front transition cavity and the feeding end of the sealed copper-plated wire. The rear-opening carrier frame is a three-sided frame with an opening at the rear. Fifty equidistant conveying carrier bars are fixed inside the blanking guiding carrier, and the equidistant conveying carrier bars of the blanking guiding carrier are arranged in a crosswise manner when intersecting with the equidistant conveying carrier bars of the front-opening carrier frame.

[0014] As described above, the transfer device for pre-treatment of silicon wafers before copper plating of the present invention has at least the following beneficial effects: 1. Through the three-stage sealed cavity structure from the pre-cleaning cavity to the inert gas buffer cavity and then to the vacuum transition cavity, in a physical isolation manner, the exposure time of the silicon wafers in the air is greatly shortened, preventing the silicon wafers from being oxidized before copper plating and ensuring the surface quality of the silicon wafers for film formation. 2. By dividing the pre-cleaning cavity, the inert gas buffer cavity and the vacuum transition cavity into front and rear cavities, and installing the drive and the active conveying components of the silicon wafer circulating conveying mechanism in the rear cavity, it is prevented that the friction particles generated by the mechanical movement of the drive and the active conveying components cause dust pollution on the surface of the silicon wafers, resulting in a high cleanliness retention during the pre-treatment of the silicon wafers. 3. Through the setting of the anti-leakage self-opening and closing component and the anti-air leakage self-opening and closing component, the cavity sealing of the pre-cleaning cavity and the vacuum transition cavity is realized, ensuring the continuous transmission of the silicon wafers in a closed environment. 4. By using a silicon wafer carrier with eight equidistant conveying carrier bars to support the silicon wafers, the direction of the silicon wafer carrier during the conveying process is fixed, so that it always remains horizontal. The silicon wafers inside do not need to be clamped and their positions can also be kept stable. And the silicon wafer carrier and the blanking guiding carrier cross without contact, feeding the silicon wafers into the sealed copper-plated wire, conveying the silicon wafers, and non-contact conveying of the silicon wafers prevents lattice damage of the silicon wafers. Description of the Drawings

[0015] Figure 1 Shown is the front view of the overall structure of the present invention.

[0016] Figure 2 Shown is the front perspective view of the overall structure of the present invention.

[0017] Figure 3 Shown is the southeast perspective three-dimensional view of the overall structure of the present invention in the state without the sealed copper-plated wire.

[0018] Figure 4 Shown is the front perspective view of the silicon wafer circulating conveying mechanism of the present invention.

[0019] Figure 5 Shown is the southeast perspective three-dimensional view of the mating structure of the directional slider and the silicon wafer carrier of the present invention.

[0020] Figure 6Shown is a perspective sectional view from the southeast of the mating structure of the front cavity and the rear cavity of the present invention.

[0021] Figure 7 Shown is a perspective view from the southeast of the mating structure of the rear cavity of the present invention and the silicon wafer circulating transfer mechanism.

[0022] Figure 8 Shown is a front perspective view of the transmission structure of the silicon wafer circulating transfer mechanism between the front cavity and the rear cavity of the present invention.

[0023] Figure 9 Shown is a perspective sectional view from the southeast of the overall structure of the present invention in the state of unsealed copper plating wire.

[0024] Figure 10 Shown is a perspective view from the southeast of the leak-proof self-opening and closing component structure of the present invention.

[0025] Description of Component Labels Frame; 2. Pre-cleaning cavity; 201. Front cleaning cavity; 202. Rear cleaning transfer cavity; 203. First transfer guide groove; 204. First sealing installation groove; 205. Leak-proof self-opening and closing component; 2051. Return spring; 2052. Pressure plate; 2053. Elastic sealing block; 206. Nitrogen curtain; 3. Inert gas buffer cavity; 301. Front gas buffer cavity; 302. Rear buffer transfer cavity; 303. Second transfer guide groove; 304. Vacuum curtain; 305. Plasma activator installation hole; 4. Vacuum transition cavity; 401. Front transition cavity; 402. Rear transition transfer cavity; 403. Third transfer guide groove; 404. Second sealing installation groove; 405. Air leakage-proof self-opening and closing component; 406. Molecular pump installation hole; 5. Sealed copper plating wire; 6. Silicon wafer circulating transfer mechanism; 601. Positioning substrate; 602. Loading stage; 603. Auxiliary conveyor belt; 604. Driving sprocket; 605. Driven chain; 606. Directional slider; 607. Silicon wafer carrier; 6071. Front opening carrier frame; 6072. Extrusion guide bar; 6073. Equally spaced transfer carrier bar; 608. Pin; 609. Unloading guide carrier; 6091. Rear opening carrier frame; 6092. Equally spaced unloading carrier bar. Detailed Embodiment

[0026] The following specific embodiments illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0027] As described in the background art, since copper will form an insulating oxide layer under standard electrode potential, resulting in a sharp increase in the interconnect resistance, when the traditional transfer equipment is exposed to air, an oxide layer is formed on the surface of the silicon wafer, destroying the heteroepitaxy of the copper thin film. The Chinese utility model patent "An anti-oxidation transfer device for integrated circuit board production" with the publication number CN213078928U shows that by using the spray heads on the inner side walls of the first U-shaped plates to spray anti-oxidant on both ends of the integrated circuit board, the integrated circuit board can be protected against oxidation. However, due to the open structure design of its transfer device, the silicon wafer is exposed to air before the anti-oxidant is sprayed on its ends, and it is difficult to control the oxygen permeability, so the interface oxidation cannot be completely solved. Moreover, this device uses mechanical transmission, and the space of the transmission mechanism is not isolated from the space of the silicon wafer. The friction particles generated by mechanical transmission will cause dust pollution on the surface of the silicon wafer, resulting in an increase in the defect density. Finally, this device clamps the integrated circuit board by controlling the distance between the movable block and the fixed block, squeezing and contacting the silicon wafer like a traditional fixture, which is likely to cause scratches and lattice damage, increasing the processing rate of the silicon wafer. Embodiment 1

[0028] As Figure 1 - Figure 2 As shown, to solve the above problems, through a three-stage sealed cavity structure from the pre-cleaning chamber 2 to the inert gas buffer chamber 3 and then to the vacuum transition chamber 4, in a physical isolation manner, the exposure time of the silicon wafer in air is greatly shortened, preventing the silicon wafer from being oxidized before copper plating and ensuring the surface quality of the silicon wafer for film formation. Therefore, a transfer device for pre-treatment of silicon wafers before copper plating is invented, including: a frame 1, a pre-cleaning chamber 2 and a vacuum transition chamber 4 are installed on the left part of the frame 1, an inert gas buffer chamber 3 is arranged between the pre-cleaning chamber 2 and the vacuum transition chamber 4, a sealed copper plating line 5 is installed on the upper part of the frame 1, and the pre-cleaning chamber 2, the inert gas buffer chamber 3, the vacuum transition chamber 4 and the sealed copper plating line 5 are fixedly connected. A silicon wafer circulating transfer mechanism 6 is installed between the pre-cleaning chamber 2, the inert gas buffer chamber 3 and the vacuum transition chamber 4; During use, after the silicon wafer circulating transfer mechanism 6 loads the silicon wafer, it first takes the silicon wafer into the pre-cleaning chamber 2, passes through the chemical solution to remove surface particle impurities, and then enters the inert gas buffer chamber 3. This chamber is filled with nitrogen and has a low oxygen content, preventing the exposure of the silicon wafer and at the same time can activate the surface of the silicon wafer to improve the adhesion of the copper film on the surface of the silicon wafer. Finally, the silicon wafer completes the lossless transfer to the sealed copper plating line 5 in the vacuum transition chamber 4. After the silicon wafer enters the sealed copper plating line 5, copper plating treatment is carried out. By adopting this method, the exposure time of the silicon wafer throughout the process is reduced, the thickness of the oxide layer of the silicon wafer is strictly controlled, preventing it from affecting the copper plating quality, making the surface film formation quality of the silicon wafer good, meeting the requirements of advanced processes of subsequent integrated circuits, and solving the problem that the oxygen permeability of the traditional open transfer scheme is difficult to control and the interface oxidation cannot be completely solved. Embodiment 2

[0029] AsFigure 1 - Figure 3 and Figure 6 - Figure 10 As shown, to solve the above problems, by dividing the pre-cleaning chamber 2, the inert gas buffer chamber 3 and the vacuum transition chamber 4 into front and rear chambers, and installing the drive and the active transfer components of the silicon wafer circulating transfer mechanism 6 in the rear chamber, it is possible to prevent dust contamination on the surface of the silicon wafer caused by friction particles generated by the mechanical movement of the drive and the active transfer components, so that the cleaning retention rate of the silicon wafer pre-treatment is high. Therefore, a transfer device for pre-treatment before copper plating of silicon wafers is invented, which further includes: a pre-cleaning chamber 2, an inert gas buffer chamber 3 and a vacuum transition chamber 4. The pre-cleaning chamber 2 includes a front cleaning chamber 201, a rear cleaning transfer chamber 202, a first transfer guide groove 203, a first seal mounting groove 204, a leak-proof liquid self-opening and closing component 205 and a nitrogen curtain 206. The upper wall at the left end of the frame 1 is provided with the front cleaning chamber 201 and the rear cleaning transfer chamber 202, and the front cleaning chamber 201 and the rear cleaning transfer chamber 202 are fixedly connected front and rear. A first transfer guide groove 203 is opened on the connecting wall between the front cleaning chamber 201 and the rear cleaning transfer chamber 202. A first seal mounting groove 204 is opened at the lower part of the right wall of the front cleaning chamber 201 and the rear cleaning transfer chamber 202. A leak-proof liquid self-opening and closing component 205 is installed in the first seal mounting groove 204. A nitrogen curtain 206 is provided at the upper outlet of the front cleaning chamber 201, and the nitrogen curtain 206 is arranged in a double-layer cross pattern.

[0030] Among them, as Figure 1 - Figure 3 and Figure 6 - Figure 9 shown, the inert gas buffer chamber 3 includes a front gas buffer chamber 301, a rear buffer transfer chamber 302, a second transfer guide groove 303, a vacuum curtain 304 and a plasma activator mounting hole 305. The front gas buffer chamber 301 and the rear buffer transfer chamber 302 are respectively fixedly installed on the upper parts of the front cleaning chamber 201 and the rear cleaning transfer chamber 202, and the front gas buffer chamber 301 and the rear buffer transfer chamber 302 are fixedly connected front and rear. A second transfer guide groove 303 is opened on the connecting wall between the front gas buffer chamber 301 and the rear buffer transfer chamber 302. A vacuum curtain 304 is installed at the right wall outlet of the front gas buffer chamber 301. A plasma activator mounting hole 305 is opened at the upper left corner of the rear wall of the rear buffer transfer chamber 302, and a plasma activator is installed in the plasma activator mounting hole 305.

[0031] Among them, as Figure 1 - Figure 3 and Figure 6 - Figure 9As shown in the figure, the vacuum transition chamber 4 includes a front transition chamber 401, a rear transition transfer chamber 402, a third transfer guide rail groove 403, a second seal mounting groove 404, an air leakage prevention self-opening and closing assembly 405, and a molecular pump mounting hole 406. The right walls of the front gas buffer chamber 301 and the rear buffer transfer chamber 302 are fixedly connected to the front transition chamber 401 and the rear transition transfer chamber 402, and the right parts of the front transition chamber 401 and the rear transition transfer chamber 402 are fixedly arranged on the frame 1. A third transfer guide rail groove 403 is formed on the connecting wall between the front transition chamber 401 and the rear transition transfer chamber 402. A second seal mounting groove 404 is formed on the lower left wall of the front transition chamber 401 and the rear transition transfer chamber 402. An air leakage prevention self-opening and closing assembly 405 is installed in the second seal mounting groove 404. A molecular pump mounting hole 406 is formed in the upper right corner of the rear wall of the rear transition transfer chamber 402, and a molecular pump is installed in the molecular pump mounting hole 406.

[0032] Specifically, the front cleaning chamber 201, the front gas buffer chamber 301, and the front transition chamber 401 are responsible for wafer processing. After the wafer is chemically cleaned in the front cleaning chamber 201, it enters the front gas buffer chamber 301 through the nitrogen curtain 206. The nitrogen curtain 206 at the outlet of the pre-cleaning chamber 2 forms a gas barrier between the pre-cleaning chamber 2 and the inert gas buffer chamber 3, which can reduce the infiltration of oxygen when the wafer passes through. At the same time, a plasma activator installed in the rear buffer transfer chamber 302 through the plasma activator mounting hole 305 applies a high-frequency electric field to ionize the gas on the surface of the wafer, activate the surface of the wafer, and enhance the adhesion of copper plating. Then the wafer passes through the vacuum curtain 304 and enters the front transition chamber 401, and finally is transported to the sealed copper plating line 5 at the right end of the front transition chamber 401. The molecular pump controls the formation of a high-vacuum environment in the vacuum transition chamber 4 to inhibit the formation of an oxide layer during the wafer transfer process. Then the rear cleaning transfer chamber 202, the rear buffer transfer chamber 302, and the rear transition transfer chamber 402 accommodate the driving components of the wafer circulation transfer mechanism 6. The friction particles generated by the operation of the driving components in the rear chamber are restricted in the rear chamber and cannot enter the front chamber to contact the wafer, eliminating mechanical particle contamination from the source. In this way, the problems of particle contamination and oxidation during the wafer transfer process are effectively solved.

[0033] Among them, as Figure 3 、 Figure 6 and Figure 8 - Figure 10As shown, the liquid leakage prevention self-opening and closing component 205 and the air leakage prevention self-opening and closing component 405 both include a return spring 2051, a pressure plate 2052, and an elastic sealing block 2053. A plurality of pairs of return springs 2051 are equidistantly installed on the upper and lower walls of the first sealing installation groove 204 and the second sealing installation groove 404. A pressure plate 2052 is fixed between the outer ends of a plurality of return springs 2051 on the same side. And the four pressure plates 2052 are respectively slidably installed in the first sealing installation groove 204 and the second sealing installation groove 404 in two groups of two. Elastic sealing blocks 2053 are fixed on the outer sides of the four pressure plates 2052. The two elastic sealing blocks 2053 on the same vertical line are intermittently closed. The elastic sealing block 2053 is trapezoidal in an inverted shape when viewed from the front. When the two elastic sealing blocks 2053 are closed, they are sealed with the front cleaning cavity 201 and the front transition cavity 401. When the two elastic sealing blocks 2053 are closed, they form a triangular opening to the right.

[0034] Specifically, when the wafer carrier 607 passes through the liquid leakage prevention self-opening and closing component 205 located on the right wall of the pre-cleaning cavity 2 or the air leakage prevention self-opening and closing component 405 located on the left wall of the vacuum transition cavity 4, the wafer carrier 607 pushes open the triangular opening formed by the elastic sealing block 2053. The pressure plate 2052 is pressed and slides and contracts into the first sealing installation groove 204 or the second sealing installation groove 404, squeezing the return spring 2051, so that the wafer carrier 607 drives the wafer to pass through without resistance. After passing through, the return spring 2051 rebounds, driving the pressure plate 2052 to control the elastic sealing block 2053 to close, realizing the cavity sealing of the pre-cleaning cavity 2 and the vacuum transition cavity 4, and ensuring the continuous transmission of the wafer in a closed environment. Embodiment 3

[0035] Please refer to Figure 1 - Figure 9, to solve the above problems, a wafer carrier 607 that supports the wafer with eight equally spaced transfer carriers 6073 is adopted to fix the direction of the wafer carrier 607 during the transfer process, so that it always remains horizontal. The wafer inside does not need to be clamped and its position can also be kept stable. The wafer carrier 607 and the blanking guide carrier 609 cross without contact, and the wafer is fed into the sealed copper plating wire 5 to convey the wafer, and the wafer is conveyed in a non-contact manner to prevent lattice damage of the wafer. Therefore, a transfer device for pre-treatment of wafer copper plating is invented, which further includes: a wafer circulating transfer mechanism 6. The wafer circulating transfer mechanism 6 includes a positioning substrate 601, a loading stage 602, an auxiliary conveyor belt 603, a driving sprocket 604, a driven chain 605, a directional slider 606, a wafer carrier 607, a retaining pin 608 and a blanking guide carrier 609. A positioning substrate 601 is fixed between the lower right wall of the front cleaning chamber 201 and the lower left wall of the front transition chamber 401. The upper part of the positioning substrate 601 is fixed with a loading stage 602. An auxiliary conveyor belt 603 is installed in the loading stage 602 in a driving manner. A driving sprocket 604 is respectively rotatably installed at the lower left corner of the rear cleaning transfer chamber 202, the upper left corner of the rear buffer transfer chamber 302, the upper right corner and the lower part of the rear transition transfer chamber 402. A driven chain 605 is sleeved between the four driving sprockets 604 by chain drive. Fifteen directional sliders 606 are equidistantly installed on the driven chain 605 through fifteen retaining pins 608. The first transfer guide groove 203, the second transfer guide groove 303 and the third transfer guide groove 403 are connected and communicate with each other, and the first transfer guide groove 203, the second transfer guide groove 303 and the third transfer guide groove 403 form a rectangular frame groove. Chamfers are provided at the four corners of the inner frame of the rectangular frame groove. The fifteen directional sliders 606 are all slidably installed in the first transfer guide groove 203, the second transfer guide groove 303 and the third transfer guide groove 403. A wafer carrier 607 is installed on the front wall of the fifteen directional sliders 606, and the wafer carrier 607 is loaded with wafers by a manipulator when passing over the upper part of the auxiliary conveyor belt 603. A blanking guide carrier 609 is fixed between the inner front wall of the front transition chamber 401 and the inner front wall of the loading end of the sealed copper plating wire 5, and the movement routes of the fifteen wafer carriers 607 intersect with the left end of the blanking guide carrier 609. The blanking guide carrier 609 intermittently crosses the wafer carrier 607 but does not contact it.

[0036] Among them, as Figure 5 and Figure 9As shown, the silicon wafer carrier 607 includes a front-opening carrier frame 6071, an extrusion guiding strip 6072, and equally spaced conveying carrier strips 6073. The rear wall of the front-opening carrier frame 6071 is fixedly connected to the front wall of the directional slider 606. The front-opening carrier frame 6071 is a three-sided frame with an opening at the front. An extrusion guiding strip 6072 is provided at the left end of the front-opening carrier frame 6071. The extrusion guiding strip 6072 is triangular in front view, and the two sides on the left of the triangle are parallel to the triangular opening sides of the elastic sealing block 2053. Eight equally spaced conveying carrier strips 6073 are fixed in the front-opening carrier frame 6071, and the silicon wafers are intermittently placed on the eight equally spaced conveying carrier strips 6073 in the front-opening carrier frame 6071.

[0037] Among them, as Figure 4 and Figure 9 shown, the blanking guiding carrier frame 609 includes a rear-opening carrier frame 6091 and equally spaced blanking carrier strips 6092. The front wall of the rear-opening carrier frame 6091 is fixedly connected to the inner side of the front wall of the front transition cavity 401 and the feeding end of the sealed copper-plated wire 5. The rear-opening carrier frame 6091 is a three-sided frame with an opening at the rear. Fifty equally spaced conveying carrier strips 6073 are fixed in the blanking guiding carrier frame 609, and the equally spaced conveying carrier strips 6073 of the blanking guiding carrier frame 609 are arranged in a cross pattern when intersecting with the equally spaced conveying carrier strips 6073 of the front-opening carrier frame 6071.

[0038] Specifically, the first transfer guide rail groove 203, the second transfer guide rail groove 303, and the third transfer guide rail groove 403 are connected to form a rectangular parallelepiped frame groove. The four driving sprockets 604 can drive the driven chain 605 to run in a closed loop along the guide rail in the clockwise direction, driving the directional slider 606 to slide within the rectangular parallelepiped frame groove, so that the fifteen groups of wafer carriers 607 are circulated and driven in the clockwise direction among the pre-cleaning chamber 2, the inert gas buffer chamber 3, and the vacuum transition chamber 4. First, when the wafer carrier 607 passes above the auxiliary conveyor belt 603, the loading manipulator loads the wafers into the wafer carrier 607, and then enters each chamber for pre-treatment and anti-oxidation transfer. During the cyclic transmission process, the chamfers at the four corners of the inner frame of the rectangular parallelepiped frame groove can reduce the frictional resistance of the directional slider 606 passing through the bending part of the rectangular parallelepiped frame groove, and the rectangular parallelepiped frame groove can limit the direction of the directional slider 606 during the sliding process, ensuring that the wafer carrier 607 remains oriented during the movement process, making the horizontal stability of the carrier strong, preventing the wafers from falling out during the transfer process, and the triangular extrusion guide strip 6072 of the wafer carrier 607 matches the triangular opening of the elastic sealing block 2053. When passing through between the elastic sealing blocks 2053, the shape of the front-opening carrier frame 6071 cooperates with the eight equally spaced transfer carrier bars 6073, enabling the wafers to be embedded, realizing the non-extrusive crossing of the sealed cavity. Finally, when the wafer carrier 607 passes through the unloading guide carrier 609, the wafers are transferred to the unloading guide carrier 609 by the cross transmission of the wafer carrier 607 and the unloading guide carrier 609. The inclination angle set by the unloading guide carrier 609 uses the height difference to make the wafers slide into the sealed copper plating line 5. There is no mechanical extrusion contact throughout the process, enabling the wafers to slide into the sealed copper plating line 5, while maintaining the position accuracy of the wafers and completely avoiding the clamping damage of the traditional transfer positioning tool.

[0039] Although the present invention has been described in detail above with general descriptions and specific embodiments, based on the present invention, some modifications or improvements can be made, which are obvious to those skilled in the art. Therefore, these modifications or improvements made without departing from the spirit of the present invention all fall within the scope of protection required by the present invention.

Claims

1. A transfer device for the pretreatment of silicon wafers before copper plating, characterized in that, Including: A frame (1), a pre-cleaning chamber (2) and a vacuum transition chamber (4) are installed on the left part of the frame (1), an inert gas buffer chamber (3) is arranged between the pre-cleaning chamber (2) and the vacuum transition chamber (4), a sealed copper plating wire (5) is installed on the upper part of the frame (1), and the pre-cleaning chamber (2), the inert gas buffer chamber (3), the vacuum transition chamber (4) and the sealed copper plating wire (5) are fixedly communicated. A silicon wafer circulating transfer mechanism (6) is installed between the pre-cleaning chamber (2), the inert gas buffer chamber (3) and the vacuum transition chamber (4); Wherein, the pre-cleaning chamber (2) is used to remove particulate impurities on the surface of the silicon wafer with chemical liquid; Wherein, the inert gas buffer chamber (3) is used to control the oxygen concentration in the space where the silicon wafer is located after the silicon wafer comes out of the pre-cleaning chamber (2), and reduce the exposure time and exposure degree of the single silicon wafer; Wherein, the vacuum transition chamber (4) is used to provide a vacuum space for the transfer of the silicon wafer; Wherein, the sealed copper plating wire (5) is used to perform copper plating treatment on the silicon wafer; Wherein, the silicon wafer circulating transfer mechanism (6) is used to load the silicon wafer, drive the silicon wafer to flow between the pre-cleaning chamber (2), the inert gas buffer chamber (3) and the vacuum transition chamber (4), and then transfer the silicon wafer into the sealed copper plating wire (5); 2. The transfer device for pre-treatment of copper plating on silicon wafers according to claim 1, characterized in that: The pre-cleaning chamber (2) includes a front cleaning chamber (201), a rear cleaning transfer chamber (202), a first transfer guide rail groove (203), a first sealed installation groove (204), a liquid leakage prevention self-opening and closing component (205) and a nitrogen curtain (206). The front cleaning chamber (201) and the rear cleaning transfer chamber (202) are installed on the upper wall at the left end of the frame (1), and the front cleaning chamber (201) and the rear cleaning transfer chamber (202) are fixedly connected front and back. A first transfer guide rail groove (203) is opened on the connecting wall between the front cleaning chamber (201) and the rear cleaning transfer chamber (202). A first sealed installation groove (204) is opened at the lower part of the right wall of the front cleaning chamber (201) and the rear cleaning transfer chamber (202). A liquid leakage prevention self-opening and closing component (205) is installed in the first sealed installation groove (204). A nitrogen curtain (206) is arranged at the upper outlet of the front cleaning chamber (201).

3. The transfer device for pre-treatment of copper plating on silicon wafers according to claim 2, characterized in that: The inert gas buffer chamber (3) includes a front gas buffer chamber (301), a rear buffer transfer chamber (302), a second transfer guide rail groove (303), a vacuum air curtain (304), and a plasma activator mounting hole (305). The upper parts of the front cleaning chamber (201) and the rear cleaning transfer chamber (202) are respectively fixedly installed with the front gas buffer chamber (301) and the rear buffer transfer chamber (302), and the front gas buffer chamber (301) and the rear buffer transfer chamber (302) are fixedly connected front and rear. A second transfer guide rail groove (303) is provided on the connecting wall of the front gas buffer chamber (301) and the rear buffer transfer chamber (302). A vacuum air curtain (304) is installed at the right wall outlet of the front gas buffer chamber (301). A plasma activator mounting hole (305) is provided at the upper left corner of the rear wall of the rear buffer transfer chamber (302), and a plasma activator is installed in the plasma activator mounting hole (305).

4. The transfer device for the pretreatment before copper plating on the silicon wafer according to claim 3, characterized in that: The vacuum transition chamber (4) includes a front transition chamber (401), a rear transition transfer chamber (402), a third transfer guide rail groove (403), a second seal mounting groove (404), an air leakage prevention self-opening and closing component (405), and a molecular pump mounting hole (406). The right walls of the front gas buffer chamber (301) and the rear buffer transfer chamber (302) are fixedly communicated with the front transition chamber (401) and the rear transition transfer chamber (402), and the right parts of the front transition chamber (401) and the rear transition transfer chamber (402) are fixedly arranged on the frame (1). A third transfer guide rail groove (403) is provided on the connecting wall of the front transition chamber (401) and the rear transition transfer chamber (402). A second seal mounting groove (404) is provided on the lower left wall of the front transition chamber (401) and the rear transition transfer chamber (402). An air leakage prevention self-opening and closing component (405) is installed in the second seal mounting groove (404). A molecular pump mounting hole (406) is provided at the upper right corner of the rear wall of the rear transition transfer chamber (402), and a molecular pump is installed in the molecular pump mounting hole (406).

5. The transfer device for pre-treatment of copper plating on silicon wafers according to claim 4, wherein: The liquid leakage prevention self-opening and closing assembly (205) and the air leakage prevention self-opening and closing assembly (405) both include a return spring (2051), a pressing plate (2052), and an elastic sealing block (2053). A plurality of pairs of return springs (2051) are equidistantly installed on the upper and lower walls of the first sealing installation groove (204) and the second sealing installation groove (404). A pressing plate (2052) is fixed between the outer ends of several of the return springs (2051) on the same side. And the four pressing plates (2052) are respectively slidably installed in the first sealing installation groove (204) and the second sealing installation groove (404) in two groups of two. Elastic sealing blocks (2053) are fixed on the outer sides of the four pressing plates (2052). The two elastic sealing blocks (2053) on the same vertical line are intermittently closed. The elastic sealing block (2053) is trapezoidal in a vertically inverted shape when viewed from the front. When the two elastic sealing blocks (2053) are closed, they are sealed with the front cleaning cavity (201) and the front transition cavity (401). When the two elastic sealing blocks (2053) are closed, they form a triangular opening to the right.

6. The transfer device for pre-treatment of copper plating on silicon wafers according to claim 4, characterized in that: The first transfer guide rail groove (203), the second transfer guide rail groove (303), and the third transfer guide rail groove (403) are connected and communicate with each other. And the first transfer guide rail groove (203), the second transfer guide rail groove (303), and the third transfer guide rail groove (403) form a rectangular frame groove. Chamfers are provided at the four corners of the inner frame of the rectangular frame groove.

7. The transfer device for pre - treatment of copper plating on silicon wafers according to claim 6, wherein: The silicon wafer circulating transfer mechanism (6) includes a positioning substrate (601), a loading stage (602), an auxiliary conveyor belt (603), a driving sprocket (604), a driven chain (605), a directional slider (606), a silicon wafer carrier (607), a retaining pin (608), and a blanking guiding carrier (609). A positioning substrate (601) is fixed between the lower right wall of the front cleaning chamber (201) and the lower left wall of the front transition chamber (401). The upper part of the positioning substrate (601) is fixed with a loading stage (602). An auxiliary conveyor belt (603) is installed in the loading stage (602) in a driving manner. A driving sprocket (604) is respectively rotatably installed at the lower left corner of the rear cleaning transfer chamber (202), the upper left corner of the rear buffer transfer chamber (302), the upper right corner and the lower part of the rear transition transfer chamber (402). A driven chain (605) is sleeved between the four driving sprockets (604) through chain drive. Fifteen directional sliders (606) are equidistantly installed on the driven chain (605) through fifteen retaining pins (608). The fifteen directional sliders (606) are all slidably installed in the first transfer guide groove (203), the second transfer guide groove (303), and the third transfer guide groove (403). A silicon wafer carrier (607) is installed on the front wall of the fifteen directional sliders (606). When the silicon wafer carrier (607) passes above the auxiliary conveyor belt (603), the silicon wafer is loaded by a manipulator. A blanking guiding carrier (609) is fixed between the inner front wall of the front transition chamber (401) and the inner front wall of the loading end of the sealing copper wire (5). The movement routes of the fifteen silicon wafer carriers (607) intersect with the left end of the blanking guiding carrier (609). The blanking guiding carrier (609) intermittently crosses the silicon wafer carrier (607) but does not contact it.

8. The transfer device for pre-treatment of copper plating on silicon wafers according to claim 7, characterized in that: The silicon wafer carrier (607) includes a front-opening carrier frame (6071), an extrusion guiding strip (6072), and equidistant transfer carrier strips (6073). The rear wall of the front-opening carrier frame (6071) is fixedly connected to the front wall of the directional slider (606). The front-opening carrier frame (6071) is a three-sided frame with an opening at the front. An extrusion guiding strip (6072) is arranged at the left end of the front-opening carrier frame (6071). The extrusion guiding strip (6072) is triangular when viewed from the front. The two sides on the left of the triangle are parallel to the triangular opening sides of the elastic sealing block (2053). Eight equidistant transfer carrier strips (6073) are fixed in the front-opening carrier frame (6071). The silicon wafers are intermittently placed on the eight equidistant transfer carrier strips (6073) in the front-opening carrier frame (6071).

9. The transfer device for pre-treatment of copper plating on silicon wafers according to claim 8, characterized in that: The blanking guiding carrier (609) includes a rear-opening carrier frame (6091) and equidistant blanking carrier bars (6092). The front wall of the rear-opening carrier frame (6091) is fixedly connected to the inner side of the front wall of the front transition cavity (401) and the feeding end of the sealed copper-plated wire (5). The rear-opening carrier frame (6091) is a three-sided frame with an opening at the rear. Fifty equidistant conveying carrier bars (6073) are fixed in the blanking guiding carrier (609), and when the equidistant conveying carrier bars (6073) of the blanking guiding carrier (609) intersect with those of the front-opening carrier frame (6071), they are arranged in a cross pattern.

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