Semiconductor single-tube device and chopper circuit

Abstract

The invention discloses a semiconductor single-tube device and a chopper circuit, the single-tube device comprises a device heat dissipation substrate, a first copper-clad ceramic substrate and a second copper-clad ceramic substrate are arranged on the device heat dissipation substrate, a plurality of IGBT chips connected in parallel are arranged on the device heat dissipation substrate, a part of the IGBT chips are arranged on the first copper-clad ceramic substrate, a part of the IGBT chips are arranged on the second copper-clad ceramic substrate, and a part of the IGBT chips are arranged on the second copper-clad ceramic substrate. The other part of IGBT chips are arranged on the second copper-clad ceramic substrate; all or part of the IGBT chips are selected according to needs, each IGBT chip in all or part of the IGBT chips is provided with a diode chip, and each IGBT chip is in anti-parallel connection with the corresponding diode chip. The power density can be continuously increased, and the chopping capability is further improved.

Description

Technical Field

[0001] The present invention belongs to the field of power semiconductor devices, and particularly relates to a semiconductor single-tube device and a chopper circuit. Background Art

[0002] Under the background of "carbon neutrality", the proportion of renewable energy power generation is increasing day by day. High Voltage Ride Through (HVRT) of a wind farm means that when the grid-connected point voltage rises due to a power system accident or disturbance, the wind farm can ensure continuous operation without tripping within a certain voltage rise range and time interval. The chopper IGBT device is the core device of the wind power high voltage ride through chopper device, and has been widely integrated into the wind power converter to ensure the stability of wind power generation under power system accidents or disturbances. With the gradual increase of the fan power and the large-scale access of new energy, higher requirements are put forward for the power level of the chopper device.

[0003] The Chinese patent application with the application number 2025100988175 discloses a semiconductor chopper device, which greatly improves the module utilization rate compared with the traditional chopper device, can realize one-for-two at the application end, and greatly reduces the cost. However, the existing technology has the following deficiencies:

[0004] (1) In terms of chopping ability, in the above scheme, the layout of the FRD chips in the upper bridge circuit is limited by the ceramic copper-clad substrate, the number of parallel FRD chips is limited, and its power density is difficult to continue to increase, so the chopping ability is limited;

[0005] (2) In terms of current-carrying ability, in the above chopping scheme, each of the positive terminal and the negative terminal is a piece of power terminal, and the current output ability of the device is limited, making it difficult to meet the long-term large-current current-carrying requirement;

[0006] (3) In terms of cost, in addition, in the above chopping device scheme, since multiple FRD chips are connected in parallel in the upper bridge circuit, the device cost is relatively high. Summary of the Invention

[0007] Object of the Invention: The object of the present invention is to provide a semiconductor single-tube device and a chopper circuit, whose power density can continue to increase and the chopping ability can be further improved.

[0008] Technical Solution: A semiconductor single-tube device of the present invention includes a device heat dissipation substrate, on which a first copper-clad ceramic substrate and a second copper-clad ceramic substrate are provided. It also includes a plurality of IGBT chips connected in parallel, with a part of the IGBT chips arranged on the first copper-clad ceramic substrate and another part of the IGBT chips arranged on the second copper-clad ceramic substrate; all or part of the IGBT chips are selected as needed, and a diode chip is configured for each IGBT chip in all or part of the IGBT chips, and each IGBT chip is anti-parallel connected with the corresponding diode chip.

[0009] Further, a first IGBT chip, a second IGBT chip, and a third IGBT chip are disposed on the first copper-clad ceramic substrate, and a fourth IGBT chip, a fifth IGBT chip, and a sixth IGBT chip are disposed on the second copper-clad ceramic substrate.

[0010] Further, if diode chips are configured for all IGBT chips, a first diode chip, a second diode chip, and a third diode chip are disposed on the first copper-clad ceramic substrate, and a fourth diode chip, a fifth diode chip, and a sixth diode chip are disposed on the second copper-clad ceramic substrate; at this time, the collectors of the first IGBT chip, the second IGBT chip, and the third IGBT chip are welded to the cathodes of the first diode chip, the second diode chip, and the third diode chip on the first copper-clad ceramic substrate;

[0011] The collectors of the fourth IGBT chip, the fifth IGBT chip, and the sixth IGBT chip are welded to the cathodes of the fourth diode chip, the fifth diode chip, and the sixth diode chip on the second copper-clad ceramic substrate.

[0012] Further, the emitters of the first IGBT chip, the second IGBT chip, and the third IGBT chip are connected to the anodes of the first diode chip, the second diode chip, and the third diode chip through a second bonding wire cluster, a third bonding wire cluster, and a fourth bonding wire cluster for front-side connection;

[0013] The emitters of the fourth IGBT chip, the fifth IGBT chip, and the sixth IGBT chip are connected to the anodes of the fourth diode chip, the fifth diode chip, and the sixth diode chip through a fifth bonding wire cluster, a sixth bonding wire cluster, and a seventh bonding wire cluster for front-side connection.

[0014] Further, if diode chips are configured for the second IGBT chip and the third IGBT chip, a first diode chip and a second diode chip are disposed on the first copper-clad ceramic substrate;

[0015] At this time, the collectors of the second IGBT chip and the third IGBT chip are welded to the cathodes of the first diode chip and the second diode chip on the first copper-clad ceramic substrate.

[0016] Further, the emitters of the second IGBT chip and the third IGBT chip are connected to the anodes of the first diode chip and the second diode chip through a second bonding wire cluster and a third bonding wire cluster for front-side connection.

[0017] Further, two sets of positive terminals are provided at one end of the device heat dissipation substrate, and a first bonding wire cluster is connected between the first copper-clad ceramic substrate and the second copper-clad ceramic substrate;

[0018] After the collectors of the first IGBT chip, the second IGBT chip, and the third IGBT chip are connected in parallel with the collectors of the fourth IGBT chip, the fifth IGBT chip, and the sixth IGBT chip through the first bonding wire cluster, they are electrically connected to two sets of positive terminals.

[0019] Further, two sets of negative terminals are provided at the other end of the device heat dissipation substrate, and an eighth bonding wire cluster is connected between the first copper-clad ceramic substrate and the second copper-clad ceramic substrate.

[0020] Further, after the emitters of the first IGBT chip, the second IGBT chip, and the third IGBT chip are connected in parallel with the emitters of the fourth IGBT chip, the fifth IGBT chip, and the sixth IGBT chip through the eighth bonding wire cluster, they are electrically connected to two sets of negative terminals.

[0021] Based on the same inventive concept, a chopper circuit of the present invention includes a rectifier diode and the above-mentioned semiconductor single-tube device;

[0022] The anode of the rectifier diode is electrically connected to the collector of the semiconductor single-tube device through the positive terminal; the chopping ability of the chopper circuit is improved by adjusting the capacitance of the rectifier diode.

[0023] Beneficial effects: Compared with the prior art, the remarkable technical effects of the present invention are as follows:

[0024] From the perspective of power density, in the semiconductor single-tube device of the present invention, the upper bridge circuit is cancelled, and through the circuit design of the copper-clad ceramic substrate and the connection of the bonding wire cluster, all IGBT chips on multiple ceramic copper-clad substrates in the semiconductor module are connected in parallel, and all diode chips are anti-parallel to the IGBT chips, realizing the single-tube topology of the semiconductor device, greatly improving the module utilization rate and increasing the module power density;

[0025] From the perspective of device current output, in the semiconductor single-tube device of the present invention, both the positive terminal and the negative terminal are two power terminals connected in parallel, which can greatly improve the module current output ability and the reliability under large current;

[0026] From the perspective of chopping ability, in the chopper circuit of the present invention, by setting a rectifier diode (equivalent to the upper bridge circuit) outside the semiconductor single-tube device, the electrical connection between the anode of the external rectifier diode and the collector of the IGBT semiconductor single-tube device realizes the chopper circuit topology. By adjusting the capacitance of the external rectifier diode, the chopping ability of the module can be greatly improved;

[0027] From the perspective of system cost, in the chopper circuit of the present invention, due to the high cost advantage of the rectifier diode, compared with the traditional chopper IGBT power device, the device cost of the present invention is greatly reduced. Description of the Drawings

[0028] Figure 1 This is the chip layout diagram of a semiconductor single-device disclosed in Embodiment 1 of the present invention;

[0029] Figure 2 This is the circuit single-device topology diagram of a single IGBT chip disclosed in Embodiment 1 of the present invention;

[0030] Figure 3 This is the chip layout diagram of a semiconductor single-device disclosed in Embodiment 2 of the present invention;

[0031] Figure 4 This is the topology diagram of a chopper circuit disclosed in Embodiment 3 of the present invention. Specific embodiments

[0032] The technical solutions of the present invention will be introduced in detail below in conjunction with specific embodiments and the accompanying drawings of the specification.

[0033] Embodiment 1

[0034] As Figure 1 shown, the semiconductor single-device of the present invention involves the following components: positive terminal 1, negative terminal 2, gate signal terminal 4, return line terminal 5, first copper-clad ceramic substrate 61, second copper-clad ceramic substrate 62, device heat dissipation substrate 7, first IGBT chip 81, second IGBT chip 82, third IGBT chip 83, fourth IGBT chip 84, fifth IGBT chip 85, sixth IGBT chip 86, first bonding wire cluster 10, second bonding wire cluster 111, third bonding wire cluster 112, fourth bonding wire cluster 113, fifth bonding wire cluster 114, sixth bonding wire cluster 115, seventh bonding wire cluster 116, eighth bonding wire cluster 12, first diode chip 161, second diode chip 162, third diode chip 163, fourth diode chip 164, fifth diode chip 165, sixth diode chip 166. The specific connection method is as follows:

[0035] The positive terminal 1 and the negative terminal 2 are respectively connected to an external circuit; the gate-level signal terminal 3 and the return line terminal 4 are respectively connected to an external drive control circuit. The first copper-clad ceramic substrate 61 and the second copper-clad ceramic substrate 62 are welded or sintered on the device heat dissipation substrate 7. The number of IGBT chips is multiple and they are connected in parallel. Among them, a part of the IGBT chips is arranged on the first copper-clad ceramic substrate 61, and another part of the IGBT chips is arranged on the second copper-clad ceramic substrate 62. All or part of the IGBT chips are selected as needed, and diode chips are configured for each of all or part of the IGBT chips. Each IGBT chip is anti-parallel connected with the corresponding diode chip. The single-tube circuit topology is composed of a group of IGBT chips and the diode chips anti-parallel connected therewith. In this embodiment, the number of IGBT chips is set to 6, namely the first IGBT chip 81, the second IGBT chip 82, the third IGBT chip 83, the fourth IGBT chip 84, the fifth IGBT chip 85, and the sixth IGBT chip 86. Among them, the first IGBT chip 81, the second IGBT chip 82, and the third IGBT chip 83 are welded or sintered on the first copper-clad ceramic substrate 61, and the fourth IGBT chip 84, the fifth IGBT chip 85, and the sixth IGBT chip 86 are welded or sintered on the second copper-clad ceramic substrate 62.

[0036] As Figure 1 shown, if diode chips are configured for all the IGBT chips, then the first diode chip 161, the second diode chip 162, and the third diode chip 163 are arranged on the first copper-clad ceramic substrate 61, and the fourth diode chip 164, the fifth diode chip 165, and the sixth diode chip 166 are arranged on the second copper-clad ceramic substrate 62.

[0037] At this time, the collectors of the first IGBT chip 81, the second IGBT chip 82, and the third IGBT chip 83 and the cathodes of the first diode chip 161, the second diode chip 162, and the third diode chip 163 are welded on the first copper-clad ceramic substrate 61. The collectors of the fourth IGBT chip 84, the fifth IGBT chip 85, and the sixth IGBT chip 86 and the cathodes of the fourth diode chip 164, the fifth diode chip 165, and the sixth diode chip 166 are welded on the second copper-clad ceramic substrate 62.

[0038] The emitters of the first IGBT chip 81, the second IGBT chip 82, and the third IGBT chip 83 and the anodes of the first diode chip 161, the second diode chip 162, and the third diode chip 163 are front-connected through the second bonding wire cluster 111, the third bonding wire cluster 112, and the fourth bonding wire cluster 113. The emitters of the fourth IGBT chip 84, the fifth IGBT chip 85, and the sixth IGBT chip 86 and the anodes of the fourth diode chip 164, the fifth diode chip 165, and the sixth diode chip 166 are front-connected through the fifth bonding wire cluster 114, the sixth bonding wire cluster 115, and the seventh bonding wire cluster 116.

[0039] One end of the device heat dissipation substrate 7 is provided with two sets of positive terminals 1, and a first bonding wire cluster 10 is connected between the first copper-clad ceramic substrate 61 and the second copper-clad ceramic substrate 62. After the collectors of the first IGBT chip 81, the second IGBT chip 82, and the third IGBT chip 83 and the collectors of the fourth IGBT chip 84, the fifth IGBT chip 85, and the sixth IGBT chip 86 are connected in parallel through the first bonding wire cluster 10, they are electrically connected to the two sets of positive terminals 1.

[0040] The other end of the device heat dissipation substrate 7 is provided with two sets of negative terminals 2, and an eighth bonding wire cluster 12 is connected between the first copper-clad ceramic substrate 61 and the second copper-clad ceramic substrate 62. After the emitters of the first IGBT chip 81, the second IGBT chip 82, and the third IGBT chip 83 and the emitters of the fourth IGBT chip 84, the fifth IGBT chip 85, and the sixth IGBT chip 86 are connected in parallel through the eighth bonding wire cluster 12, they are electrically connected to the two sets of negative terminals 2.

[0041] Through the above method, the first IGBT chip 81, the second IGBT chip 82, and the third IGBT chip 83 on the first copper-clad ceramic substrate 61 and the fourth IGBT chip 84, the fifth IGBT chip 85, and the sixth IGBT chip 86 on the second copper-clad ceramic substrate 62 are connected in parallel, and each diode chip is anti-parallel connected to the corresponding IGBT chip. The gates of the first IGBT chip 81, the second IGBT chip 82, the third IGBT chip 83, the fourth IGBT chip 84, the fifth IGBT chip 85, and the sixth IGBT chip 86 after parallel connection are connected to the external drive control circuit through the gate signal terminal 4. The emitters of the first IGBT chip 81, the second IGBT chip 82, the third IGBT chip 83, the fourth IGBT chip 84, the fifth IGBT chip 85, and the sixth IGBT chip 86 are connected to the external drive control circuit through the return wire terminal 5.

[0042] The above method realizes the circuit topology of the semiconductor single-tube device as Figure 2As shown, where 1 is the positive terminal, 2 is the negative terminal, 3 is the gate-level signal terminal, and 4 is the return line terminal.

[0043] The semiconductor single-tube device fabricated in the above manner has a higher power density, further improved current rating, and further enhanced current-carrying capacity of the power terminals.

[0044] Through the circuit design of the copper-clad ceramic substrate and the connection of the bonding wire clusters, all IGBT chips on multiple copper-clad ceramic substrates within the semiconductor module are connected in parallel, and all diode chips are anti-parallel to the IGBT chips, realizing the single-tube topology of the semiconductor device, greatly improving the module utilization rate and increasing the module power density; compared with the traditional chopper IGBT power device, the power density of the device of the present invention can be further improved, the chopping ability is greatly enhanced, and at the same time, the system cost is effectively reduced.

[0045] At the same time, both the positive terminal and the negative terminal are two power terminals connected in parallel, so the above single-tube device has a higher current-carrying capacity and effectively improves the power density.

[0046] Embodiment 2

[0047] As Figure 3 shown, if it is selected to configure diode chips for the second IGBT chip 82 and the third IGBT chip 83, the first diode chip 161 and the second diode chip 162 are arranged on the first copper-clad ceramic substrate 61. At this time, the collectors of the second IGBT chip 82 and the third IGBT chip 83 are welded to the cathodes of the first diode chip 161 and the second diode chip 162 on the first copper-clad ceramic substrate 61. The emitters of the second IGBT chip 82 and the third IGBT chip 83 are positively connected to the anodes of the first diode chip 161 and the second diode chip 162 through the second bonding wire cluster 112 and the third bonding wire cluster 113. Except for the above, the other connection methods in this embodiment are the same as those in Embodiment 1 and will not be elaborated here.

[0048] The diode chips can be configured on the first copper-clad ceramic substrate or the second copper-clad ceramic substrate according to needs. Compared with Embodiment 1, the thermal coupling between the chips can be further reduced, and the system cost is further reduced.

[0049] Embodiment 3

[0050] As Figure 4As shown in the figure, the present invention further includes a chopper circuit, which includes a rectifier diode and the semiconductor single-tube device described in Embodiment 1 or 2. By connecting a rectifier diode in series outside the semiconductor single-tube device described in Embodiment 1 or 2, a chopper device is obtained. At this time, the rectifier diode is equivalent to the upper bridge circuit. The anode of the rectifier diode is electrically connected to the collector of the IGBT semiconductor single-tube device through the positive terminal 1 to realize the chopper circuit topology. By flexibly adjusting the capacity of the external rectifier diode, the chopping ability of the chopper circuit can be greatly improved, and at the same time, the system cost can be effectively reduced.

[0051] Compared with the FRD chip, from the perspective of the package shape, the rectifier diode has a variety of package forms and can be flexibly configured according to the requirements of the chopping ability; from the performance perspective, it has a lower on-resistance, a smaller forward voltage drop, a stronger current handling ability when conducting, and has high stability and reliability, which can ensure the stable operation of the device under high load conditions; from the perspective of the system cost, compared with the FRD chip, the rectifier diode has a mature manufacturing process and low production cost, and has a higher cost advantage. Generally speaking, the above solution greatly improves the current-carrying capacity of the power terminal of the single-tube device, the chopping ability of the chopper circuit topology is stronger, and it has a greater cost advantage.

Claims

1. A semiconductor single-tube device, comprising a device heat dissipation substrate (7), on which a first copper-clad ceramic substrate (61) and a second copper-clad ceramic substrate (62) are arranged, and characterized in that: It also includes a plurality of IGBT chips connected in parallel. A part of the IGBT chips are arranged on the first copper-clad ceramic substrate (61), and another part of the IGBT chips are arranged on the second copper-clad ceramic substrate (62); all or part of the IGBT chips are selected as needed, and a diode chip is configured for each IGBT chip in all or part of the IGBT chips, and each IGBT chip is anti-parallel connected with the corresponding diode chip.

2. The semiconductor single transistor device according to claim 1, wherein: A first IGBT chip (81), a second IGBT chip (82), and a third IGBT chip (83) are arranged on the first copper-clad ceramic substrate (61), and a fourth IGBT chip (84), a fifth IGBT chip (85), and a sixth IGBT chip (86) are arranged on the second copper-clad ceramic substrate (62).

3. The semiconductor single-tube device according to claim 2, characterized in that: If diode chips are configured for all the IGBT chips, a first diode chip (161), a second diode chip (162), and a third diode chip (163) are arranged on the first copper-clad ceramic substrate (61), and a fourth diode chip (164), a fifth diode chip (165), and a sixth diode chip (166) are arranged on the second copper-clad ceramic substrate (62); At this time, the collectors of the first IGBT chip (81), the second IGBT chip (82), and the third IGBT chip (83) and the cathodes of the first diode chip (161), the second diode chip (162), and the third diode chip (163) are welded on the first copper-clad ceramic substrate (61); The collectors of the fourth IGBT chip (84), the fifth IGBT chip (85), and the sixth IGBT chip (86) and the cathodes of the fourth diode chip (164), the fifth diode chip (165), and the sixth diode chip (166) are welded on the second copper-clad ceramic substrate (62).

4. The semiconductor single transistor device according to claim 3, characterized in that: The emitters of the first IGBT chip (81), the second IGBT chip (82), and the third IGBT chip (83) and the anodes of the first diode chip (161), the second diode chip (162), and the third diode chip (163) are connected face to face through the second bonding wire cluster (111), the third bonding wire cluster (112), and the fourth bonding wire cluster (113); The emitters of the fourth IGBT chip (84), the fifth IGBT chip (85), and the sixth IGBT chip (86) and the anodes of the fourth diode chip (164), the fifth diode chip (165), and the sixth diode chip (166) are connected face to face through the fifth bonding wire cluster (114), the sixth bonding wire cluster (115), and the seventh bonding wire cluster (116).

5. The semiconductor single transistor device according to claim 2, characterized in that: If it is selected to configure diode chips for the second IGBT chip (82) and the third IGBT chip (83), a first diode chip (161) and a second diode chip (162) are arranged on the first copper-clad ceramic substrate (61); At this time, the collectors of the second IGBT chip (82) and the third IGBT chip (83) and the cathodes of the first diode chip (161) and the second diode chip (162) are soldered on the first copper-clad ceramic substrate (61).

6. The semiconductor single-tube device according to claim 5, wherein: The emitters of the second IGBT chip (82) and the third IGBT chip (83) and the anodes of the first diode chip (161) and the second diode chip (162) are connected face-to-face through the second bonding wire cluster (112) and the third bonding wire cluster (113).

7. The semiconductor single transistor device according to claim 2, characterized in that: Two sets of positive terminals (1) are provided at one end of the device heat dissipation substrate (7), and a first bonding wire cluster (10) is connected between the first copper-clad ceramic substrate (61) and the second copper-clad ceramic substrate (62); After the collectors of the first IGBT chip (81), the second IGBT chip (82), and the third IGBT chip (83) are connected in parallel with the collectors of the fourth IGBT chip (84), the fifth IGBT chip (85), and the sixth IGBT chip (86) through the first bonding wire cluster (10), they are electrically connected to the two sets of positive terminals (1).

8. The IGBT semiconductor single-tube device according to claim 2, wherein: Two sets of negative terminals (2) are provided at the other end of the device heat dissipation substrate (7), and an eighth bonding wire cluster (12) is connected between the first copper-clad ceramic substrate (61) and the second copper-clad ceramic substrate (62).

9. The semiconductor single-tube device according to claim 8, wherein: After the emitters of the first IGBT chip (81), the second IGBT chip (82), and the third IGBT chip (83) are connected in parallel with the emitters of the fourth IGBT chip (84), the fifth IGBT chip (85), and the sixth IGBT chip (86) through the eighth bonding wire cluster (12), they are electrically connected to the two sets of negative terminals (2).

10. A chopper circuit, characterized in that: It includes a rectifier diode and the semiconductor single-tube device described in claim 1; The anode of the rectifier diode is electrically connected to the collector of the semiconductor single-tube device through the positive terminal (1); the chopping ability of the chopping circuit is improved by adjusting the capacitance of the rectifier diode.

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