Monocrystalline silicon resistivity measurement method

By oxidation heat treatment and removal of thermal oxide film of high-resistivity single crystal silicon cultured by the MCZ method, the problem of inaccurate resistivity measurement caused by nitrogen donor residue was solved, and accurate resistivity measurement of high-resistivity single crystal silicon was achieved.

CN120388903APending Publication Date: 2025-07-29SHIN ETSU HANDOTAI CO LTD
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Patent Information

Application Number
CN202510063837.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-01-29
Filing Date
2025-01-15
Publication Date
2025-07-29

AI Technical Summary

Technical Problem

In the prior art, when measuring the resistivity of high-resistance single crystal silicon cultured by adding nitrogen by the MCZ method, there is a problem that nitrogen donor residue causes inaccurate resistivity changes, especially under high resistivity conditions, it is impossible to accurately measure the resistivity from the dopant.

Method used

By oxidation heat treatment of the single crystal silicon substrate at 1100~1250°C for 90~240 minutes, a thermal oxide film is formed and removed to eliminate the influence of nitrogen donor, thereby accurately measuring the resistivity.

Benefits of technology

Accurate resistivity measurement of high-resistivity single crystal silicon is achieved, eliminating the influence of thermal oxide film on resistivity, ensuring the accuracy and accuracy of measurement.

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Abstract

The present invention is a method for measuring the resistivity of a single crystal silicon having a resistivity of 100 [Omega] cm or more grown by adding nitrogen by the MCZ method, characterized in that: a substrate cut from the single crystal silicon is subjected to an oxidation heat treatment at a temperature of 1100-1250 DEG C for 90-240 minutes to form a thermal oxide film on the surface of the substrate; after the thermal oxide film is removed from the surface of the substrate, the resistivity of the substrate is measured. As a result, provided is a method for measuring the resistivity of a single crystal silicon with which it is possible to measure the accurate resistivity derived from a dopant on a single crystal silicon having a resistivity of 100 [Omega] cm or more grown by adding nitrogen by the MCZ method.
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