Single crystal material processing device and processing method for suspension device

Abstract

The invention discloses a single crystal material processing device and processing method for a suspension device, and the processing device comprises a grinding main body fixed on a support, the grinding main body is internally provided with a grinding chamber, and the grinding chamber penetrates through the bottom of the grinding main body; the rotor seals the lower end of the grinding chamber, and the rotor is used for driving a single crystal material to be processed to do centrifugal motion in the grinding chamber; a gas channel is formed in the grinding main body and is used for allowing inert gas to enter and exit from the grinding cavity or vacuumizing; the driving part is fixed on the bracket and drives the rotor to rotate; the grinding materials are grinding layers arranged on the inner side of the grinding cavity and the side, facing the grinding cavity, of the rotor, and / or grinding particles located in the grinding cavity; through the combination of centrifugal collision grinding and inert gas cooling and protection, the appearance of the sample can be processed into a high-precision small-size sphere on the premise of not damaging the crystal structure in the sample.

Description

Technical Field

[0001] The present invention relates to the technical fields of single crystal material processing, precision manufacturing, and experimental physics instruments, and particularly to a single crystal material processing device and a processing method for a suspension device. Background Art

[0002] An electrostatic levitator is a device that levitates an object using an electric field force. Electrostatic levitators are commonly used in high-temperature physics experiments, especially in the study of liquid metals. Because at high temperatures, traditional containers will react chemically with the liquid or be contaminated, and using electrostatic levitation can avoid these problems and provide a "containerless" experimental environment.

[0003] In an electrostatic levitator experiment, only spherical samples can maintain a stable levitation state in an electrostatic field. Any deviation in shape, such as sharp edges or an asymmetric surface, may cause the sample to become unstable in the levitation state, thereby affecting the accuracy of experimental data. In an electrostatic levitation experiment, the charge of the sample needs to be evenly distributed to achieve stable levitation. For samples with irregular shapes, the distribution of the electric field at different parts will generate uneven charges, resulting in the sample being unable to levitate evenly.

[0004] Therefore, the material must be processed into a spherical shape before conducting an electrostatic levitation experiment. The spherical samples used in electrostatic levitation experiments are generally obtained by arc furnace melting. Since the sample contacts the container during the melting process, a small flat surface is likely to appear on the surface of the sample, and the larger the sample size, the more obvious the flat surface. This flat surface structure will seriously affect the stability of the sample in the electrostatic levitation experiment, increasing the complexity and uncertainty of the experiment.

[0005] Traditional methods for processing materials into spherical shapes include:

[0006] Free forging: By placing a high-temperature spherical blank into a shaping die, pressing, releasing pressure, and cooling at high temperature, the blank gradually forms a spherical shape. Forged parts may have various defects during the processing, such as: heating cracks: rapid heating causes too large a temperature difference between the inside and outside, generating thermal stress cracks; uneven grains: the blank deforms unevenly everywhere, and the deformation degree in a local area falls into the critical deformation zone; surface cracks: the forging temperature is too high or the hammering speed is too fast, resulting in surface cracks; surface oxidation: during the heating process of the forging material, the metal surface will react chemically with oxidizing gases in the air (such as O2, CO2, H2O, SO2, etc.) to form an oxide layer.

[0007] Casting method: The metal is melted and poured into a special spherical mold, and it is formed by cooling and solidification. Various defects may occur during casting processing, such as: Porosity: Round or irregular holes appear inside or on the surface of the casting, with a smooth surface, which may be caused by reasons such as damp furnace charge, poor gas discharge in the cavity, and unreasonable gating system design; Shrinkage cavity: Irregular holes appear inside or on the surface of the casting, usually located in the thick-walled area, which is caused by the volume shrinkage during metal solidification; Cold shut: An area where the metal is not fully fused appears on the surface of the casting, usually due to insufficient metal liquid temperature or too fast pouring speed; Lack of fusion: Defects where the metal is not fully fused appear inside or on the surface of the casting, usually due to low pouring temperature or unreasonable gating system design; Rough surface: The surface of the casting is not smooth, which may be due to poor surface quality of the mold or insufficient lubrication; Hot crack: Cracks appear on the surface or inside of the casting, usually due to too rapid temperature change during metal solidification or unreasonable mold design.

[0008] Spinning method: The spherical blank is placed in a special spinning machine, and the blank is gradually formed into a sphere by rolling. This method is suitable for processing large spherical shell parts. Various defects may occur during spinning processing, such as: Peeling: During the rolling process, due to uneven hardness of the blank or unreasonable process parameters, separation occurs on the surface of the processed metal, showing a fish-scale-like phenomenon; Waviness: Insufficient rigidity of the mechanical equipment, vibration, or too high mold rotation speed leads to wavy defects on the surface of the processed part; Crack: Uneven hardness and wall thickness of the blank, and too large machining feed rate lead to cracks on the surface of the processed part.

[0009] Turning machining: Special fixtures or lathe accessories are used to fix the workpiece, and the spherical surface is machined through the feeding movement of the turning tool. For single-crystal materials, their manufacturing process is relatively special, and the size is usually only a few millimeters. It is difficult for ordinary lathes to effectively clamp them. During turning, the local temperature of the workpiece may be as high as several hundred degrees Celsius, which is likely to cause lattice phase transformation, and then the single-crystal material is transformed into polycrystal. The use of coolant may also introduce impurities, which has an adverse impact on the experimental effect and material quality.

[0010] Although forging and spinning processes can efficiently plastically deform and shape materials, these processes can fragment the lattice structure within the materials, leading to the transformation of single-crystal materials into polycrystalline materials and thus losing their single-crystal characteristics. In addition, in the casting process, the metal material is first heated to a molten state and then poured into a specially designed spherical mold for shaping. Although this process is suitable for most materials, for single-crystal materials, the internal crystal structure and texture will undergo irreversible changes after heating and melting, resulting in the loss of the integrity of the single crystal. Therefore, traditional forging, spinning, and casting methods are not applicable to the processing and shaping of single-crystal materials. The core of electric arc furnace melting is to use the high temperature generated by arc discharge to melt the metal. Although this process is widely used in the melting of ordinary metals and alloys, for single-crystal materials, the heating and melting process will also damage the crystal structure. Therefore, special processes and technologies are required for the processing and shaping of single-crystal materials to ensure the integrity of their crystal structure and the stability of their properties.

[0011] It should be emphasized that although processing methods such as forging and spinning can quickly plastically deform and shape metal materials, for single-crystal materials, they will damage the integrity of their internal lattice - severe deformation will introduce dislocations and form grain boundaries, transforming single-crystal materials into polycrystalline materials and losing their original single-crystal characteristics. The casting method requires heating the material to a molten state, which will also cause irreversible changes in the original crystal structure of single-crystal materials. In addition, even for the commonly used electric arc furnace melting method, for single-crystal materials, the process of remelting and solidifying after heating and melting will damage their single-crystal structure. Therefore, traditional forging, spinning, and casting methods are not applicable to the small-size shaping processing of single-crystal materials. The spherical processing of single-crystal materials requires special processes and technologies to ensure the integrity of their crystal structure and the stability of their properties during the processing. Summary of the Invention

[0012] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a single-crystal material processing device and processing method for a suspension device, aiming to solve the technical problems such as the easy fragmentation of the internal structure of single-crystal materials during processing, and the transformation from single-crystal to polycrystal, resulting in the loss of the integrity and property stability of single-crystal materials.

[0013] To achieve the above purpose, the present invention provides a single-crystal material processing device that can be used for a suspension device, including:

[0014] A grinding main body fixed on a bracket, a grinding chamber is provided inside the grinding main body, and the grinding chamber penetrates through the bottom of the grinding main body;

[0015] a rotor, the rotor sealing the lower end of the grinding chamber, the rotor being used to drive the single crystal material to be processed to perform centrifugal motion in the grinding chamber; a gas channel being provided on the grinding body, the gas channel being used for inert gas to enter and exit the grinding chamber or for vacuuming;

[0016] A driving component fixed to the bracket, wherein the driving component drives the rotor to rotate;

[0017] The grinding material is a grinding layer provided inside the grinding chamber and on the side of the rotor facing the grinding chamber, and / or grinding particles located in the grinding chamber.

[0018] Optionally, the grinding layer is made of the same material as the single crystal material to be processed, or its hardness is greater than that of the single crystal material to be processed.

[0019] Optionally, the grinding layer is a diamond particle coating, a ceramic abrasive coating or sandpaper.

[0020] Optionally, the abrasive particles are made of the same material as the single crystal material to be processed or a material with a harder hardness than the single crystal material to be processed.

[0021] Optionally, a connecting pillar is provided at the lower end of the grinding body, and the grinding body is connected to the bracket via the connecting pillar.

[0022] Optionally, a side of the rotor facing the grinding chamber is a planar structure, and radial centrifugal blades are provided on this side.

[0023] Optionally, the rotor includes a rotating shaft and a rotating disk, the rotating shaft is connected to the rotating shaft on the side of the rotating disk facing away from the grinding chamber, the rotating shaft is connected to the driving component, and the middle part of the side of the rotating disk facing the grinding chamber is recessed toward the side facing away from the grinding chamber, and the recess depth is 1 to 3 mm.

[0024] Optionally, the grinding body, the rotor, and the driving component are each provided in plurality and correspond one to one. The grinding chambers of the plurality of grinding bodies can be connected, and the plurality of grinding chambers are each provided with a switch component for blocking the connection; the plurality of grinding chambers respectively perform stage-by-stage grinding on the single crystal material. After completing a certain stage of grinding, the switch component is opened, and the single crystal material enters another grinding chamber for grinding processing.

[0025] The present invention also provides a single crystal material processing method for a suspension device, comprising:

[0026] Using the single crystal material processing device for the suspension device as described above, placing the single crystal material into the grinding chamber, and inputting the single crystal material parameters into the single crystal material processing system, the single crystal material parameters including the type, initial shape and size of the single crystal material;

[0027] The system matches the preset rotor speed, processing time, gas flow rate of the inert gas or the vacuum degree of evacuation according to the single-crystal material parameters. The gas flow rate of the inert gas is 2-3 liters per minute, and the vacuum degree is 10 -1 ~10 -2 Pa; if an inert gas is used, the preset rotor speed is matched to be 3000-4000 revolutions per minute. If evacuation is used, the preset rotor speed is preset to be 2000-3000 revolutions per minute, and the rotor acceleration is 20-38 revolutions per minute squared; the processing time is 5-10 minutes;

[0028] An inert gas is introduced into the grinding chamber or evacuation is carried out, and the driving component is started;

[0029] If it is selected to introduce an inert gas into the grinding chamber: when the temperature in the grinding chamber is greater than 50°C, the gas flow rate of the inert gas is increased, and at the same time, the rotor speed is reduced to half of the initial speed; when the temperature in the grinding chamber drops below 50°C, the gas flow rate of the inert gas is adjusted to the initial gas flow rate, and at the same time, the rotor speed is adjusted to the initial speed; when the cleanliness in the grinding chamber is greater than ISO Class 6, the gas flow rate of the inert gas is increased, and when the cleanliness in the grinding chamber is restored, the gas flow rate of the inert gas is adjusted to the initial gas flow rate;

[0030] If it is selected to evacuate the grinding chamber: when the temperature in the grinding chamber is greater than 50°C, the refrigeration function of the chiller is automatically started; when the temperature in the grinding chamber drops below 50°C, the refrigeration of the chiller is automatically turned off; when the cleanliness in the grinding chamber is greater than ISO 6, the pumping rate of the vacuum pump is increased to extract the pollutants in the grinding chamber, and when the cleanliness in the grinding chamber is restored, the pumping rate of the vacuum pump is adjusted back to the normal level;

[0031] When the temperature is abnormal or the preset processing time ends, stop working;

[0032] Repeat the above steps until a spherical single-crystal material is obtained.

[0033] In the present invention, the rotor drives the single-crystal material to perform centrifugal motion, and the single-crystal material collides and rubs with the grinding material, so that single-crystal materials of any shape can be ground, gradually grinding off the edges and corners on the surface of the single-crystal material, making its surface shape tend to be smooth, minimizing the impact load on the material, and avoiding severe stress concentration or instantaneous temperature abrupt change to prevent the destruction of the lattice due to plastic deformation.

[0034] The present invention prevents the temperature of the single-crystal material from exceeding its lattice stability threshold by restricting the heat generated during processing. The present invention mainly continuously introduces an inert gas (forming a protective atmosphere) into the grinding chamber through the gas channel, and the rapidly flowing inert gas continuously takes away the heat generated by friction, reducing the temperature inside the grinding chamber and the surface of the single-crystal material, keeping the temperature rise on the surface of the single-crystal material at an extremely low level, effectively controlling the surface temperature of the single-crystal material, and avoiding phase transformation or thermal stress microcrack defects of the single-crystal material due to local overheating. At the same time, the introduced inert gas or vacuum pumping can prevent the surface of the single-crystal material from being oxidized. In addition, by controlling the flow rate of the introduced inert gas or the degree of vacuum pumping, the cleanliness of the grinding chamber can also be adjusted. Specifically, during the processing, the tiny debris and sandpaper abrasives generated are discharged from the grinding chamber through the gap between the rotor and the grinding chamber under the action of the air flow, avoiding the cyclic flying of the debris in the grinding chamber from affecting the grinding effect or adhering to the surface of the single-crystal material. The formation of an oxide layer or the adsorption of impurities on the surface of the single-crystal material is avoided, preventing the induction of crystal structure defects and inducing or accelerating its polycrystallization trend, so that the single-crystal material still maintains its single-crystal characteristics after processing, ensuring the high purity of the spherical single-crystal material sample.

[0035] The method of the present invention has perfect temperature monitoring and control measures. The temperature of the processed single-crystal material and the inside of the grinding chamber is monitored in real time through a temperature sensor. Once the temperature approaches the dangerous threshold of the single-crystal material, the system automatically adjusts the inert gas flow rate or the rotation speed, and starts an additional cooling device if necessary to prevent the temperature from rising further. This measure ensures that the single-crystal material will not have problems such as recrystallization or microcracks due to overheating, realizes the precise control of the material temperature during the processing, and ensures that the processing process is carried out within a safe temperature range. Description of the Drawings

[0036] Figure 1 Schematic structural diagram of Embodiment 1;

[0037] Figure 2 Schematic structural diagram of another angle of Embodiment 1, where the grinding main body is an explosion schematic diagram;

[0038] Figure 3 Schematic structural diagram of the grinding main body;

[0039] Figure 4 For Figure 3 Cross-sectional view taken along A-A in

[0040] Figure 5 Schematic structural diagram of one perspective of the rotor in Embodiment 2;

[0041] Figure 6 Schematic structural diagram of another perspective of the rotor in Embodiment 2;

[0042] Figure 7 Schematic diagram of the three-dimensional structure of the rotor described in Embodiment 2;

[0043] Figure 8 Schematic diagram of the principle of spherical processing of single-crystal materials when an inert gas is introduced into the grinding body;

[0044] Figure 9 Physical pictures of single-crystal copper at different stages in Embodiment 4. Figure (a) is the physical picture before grinding, Figure (b) is the physical picture after grinding 3 times, and Figure (c) is the physical picture after grinding 4 times;

[0045] Explanation of reference numerals:

[0046] 1. Grinding body, 2. Bracket, 3. Rotor, 4. Driving component, 5. Sandpaper, 6. First gas channel, 7. Second gas channel, 8. Gas nozzle quick connector, 9. Connecting pillar, 10. Centrifugal blade, 11. Single-crystal material. Detailed implementation manners

[0047] The following specific examples illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0048] Embodiment 1

[0049] In order to meet the strict requirements for the shape of single-crystal material samples in electrostatic levitator experiments and to avoid the transformation of single-crystal materials into polycrystalline materials during the processing, the present invention proposes a single-crystal material processing device for a suspension device, which is specifically used to process small-sized cylindrical, cubic or arbitrarily shaped single-crystal blanks into small-sized spherical samples with a diameter of 2 - 6 mm. The design of this device fully considers the problem of avoiding phase transformation of single-crystal materials due to plastic deformation or high temperature during the processing. Its core concept is to continuously collide and rub the single-crystal small blank to be processed with the abrasive in a relatively closed cavity by the centrifugal force generated by rotation, gradually rounding it during the collision and rubbing, and at the same time protecting the material properties by means of special atmosphere or vacuum environment control. In addition, this device can grind 1 - 5 single-crystal materials at a time.

[0050] As shown in Figures 1-4 , 8, a single-crystal material processing device for a suspension device includes:

[0051] The grinding main body 1 fixed on the bracket 2 is provided with a grinding chamber inside, and the grinding chamber penetrates through the bottom of the grinding main body 1; specifically, the grinding main body 1 is of a cylindrical structure, and the grinding chamber is also of a cylindrical structure;

[0052] A rotor 3, the rotor 3 closes the lower end of the grinding chamber, and the rotor 3 is used to drive the single crystal material 11 to be processed to perform a centrifugal motion in the grinding chamber; a gas channel is provided on the grinding main body 1, and the gas channel is used for inert gas to enter and exit the grinding chamber or for vacuum pumping;

[0053] A driving component 4 fixed on the bracket 2, and the driving component 4 drives the rotor 3 to rotate;

[0054] A grinding material, the grinding material is a grinding layer provided on the inner side of the grinding chamber and on the side of the rotor 3 facing the grinding chamber, and / or grinding particles located in the grinding chamber. In other words, the grinding material is a grinding layer provided on the inner side of the grinding chamber and on the side of the rotor 3 facing the grinding chamber; or the grinding material is grinding particles located in the grinding chamber; or the grinding material is a grinding layer provided on the inner side of the grinding chamber and on the side of the rotor 3 facing the grinding chamber, and grinding particles located in the grinding chamber. The grinding particles are made of the same material as the single crystal material 11 to be processed or a material with a hardness greater than that of the single crystal material 11 to be processed, such as hard particles like tiny alumina balls and silicon carbide particles. The number of the grinding particles is 2000 - 3000, and the size range of the grinding particles is 1 mm - 2 mm. When the rotor 3 rotates to drive the single crystal material 11, these free grinding particles will also move in the grinding chamber along with the airflow and impact the surface of the single crystal material 11, achieving a grinding effect similar to that of the grinding layer. In this embodiment, a grinding layer is provided on the inner side of the grinding chamber and on the side of the rotor 3 facing the grinding chamber.

[0055] Since excessive plastic deformation during the machining process can cause single crystal lattice dislocation and the formation of new grain boundaries, ultra-precision micro-force machining means need to be adopted. In the present invention, the rotor 3 drives the single crystal material 11 to perform centrifugal motion, and the single crystal material 11 collides and rubs against the abrasive, enabling the grinding of single crystal materials 11 of any shape. The sharp corners on the surface of the single crystal material 11 are gradually ground off, making its surface shape tend to be smooth, minimizing the impact load on the material, and avoiding severe stress concentration or instantaneous temperature change, so as to prevent the plastic deformation from damaging the crystal lattice. Specifically, the small-sized single crystal material 11 is placed on the horizontally installed rotor 3. When the driving component 4 drives the rotor 3 to rotate at a high speed, the single crystal material 11 obtains an initial rotational motion under the drive of the frictional force of the grinding layer on the surface of the rotor 3. Under the combined action of the frictional force and the centrifugal force, the single crystal material 11 is thrown towards the inner wall of the grinding chamber, and performs circular motion and rebounds and collides in the grinding chamber. Each time the single crystal material 11 impacts the inner wall of the grinding chamber, it will have a violent collision and friction with the grinding layer, making the single crystal material 11 come into frequent contact with the grinding layer, greatly increasing the number of collision grinding times and the processing efficiency.

[0056] Since the processing only occurs on the surface layer of the single crystal material 11 and does not disturb the internal lattice structure of the single crystal material 11, it is ensured that the processed single crystal material 11 still maintains the single crystal characteristics and does not exhibit polycrystallization phenomenon caused by mechanical stress.

[0057] Single crystal material 11 is easily transformed into polycrystalline material through the recrystallization process at high temperature. Therefore, the processing temperature should be strictly controlled below the temperature at which the single crystal material 11 recrystallizes. The present invention prevents the temperature of the single crystal material 11 from exceeding its lattice stability threshold by limiting the heat generated during processing. The present invention mainly continuously introduces an inert gas into the grinding chamber through the gas channel (forming a protective atmosphere). The fast-flowing inert gas continuously takes away the heat generated by friction, thereby reducing the temperature inside the grinding chamber and on the surface of the single crystal material 11, keeping the temperature rise on the surface of the single crystal material 11 at an extremely low level, effectively controlling the surface temperature of the single crystal material 11, and avoiding phase change or thermal stress microcrack defects in the single crystal material 11 due to local overheating. At the same time, the introduction of inert gas or vacuum can prevent the surface of the single crystal material 11 from being oxidized. In addition, by controlling the flow rate of the inert gas or the degree of vacuum, the cleanliness of the grinding chamber can also be adjusted. When the inert gas is introduced, the tiny debris and sandpaper 5 grinding debris generated during the processing are discharged from the grinding chamber through the gap between the rotor 3 and the grinding chamber under the action of the airflow; when the vacuum is applied, the small debris in the grinding chamber is also removed, preventing the debris from circulating in the grinding chamber and affecting the grinding effect or adhering to the surface of the single crystal material 11. This prevents the formation of an oxide layer or the adsorption of impurities on the surface of the single crystal material 11, prevents the induction of crystal structure defects and the induction or acceleration of its polycrystallization trend, and ensures that the single crystal material 11 retains its single crystal characteristics after processing, ensuring the high purity of the spherical single crystal material 11 sample.

[0058] The inert gas can be nitrogen, argon or other inert gases, which provide an oxygen-free and temperature-controllable processing environment for the processing of the single crystal material 11 .

[0059] In general, by combining centrifugal collision grinding with inert gas cooling and protection, the present invention can process the sample's shape into a high-precision, small-sized sphere without destroying the sample's internal crystal structure. It can quickly process millimeter-level single crystal billets that were difficult to process in the past into spherical samples that meet experimental requirements, solving the technical problem in the prior art that single crystal materials 11 are difficult to be formed into small-sized spheres without loss. It can also significantly improve the rounding efficiency while always controlling the processing of the single crystal material 11 in a safe environment. Compared with traditional methods, the processing device of the present invention effectively avoids internal cracks and grain breakage that may occur during forging, high-temperature phase changes during machining, and structural defects in casting, greatly improving the quality reliability of the finished single crystal material 11 samples after processing.

[0060] The processing device of the present invention not only meets the requirements of the electrostatic levitation experiment for the shape of the sample, but also ensures that the single-crystal material 11 after processing still maintains the single-crystal characteristics and no contamination or structural damage is introduced due to processing. It is worth mentioning that this device is not only applicable to the field of electrostatic levitation experiments, but also applicable to other fields that require high-quality spherical single-crystal materials 11, such as the manufacture of precision optical components, space materials science experiments, the preparation of high-end medical materials, etc. It provides a new solution, that is, its principle is also applicable to the spheroidization or precision polishing of other small-size single-crystal materials 11 (including single-crystal metals, semiconductor crystals, and even single-crystal ceramics, etc.), and only the corresponding parameter settings need to be adjusted according to the characteristics of different materials. Thus, the present invention not only fills the technical gap in the spheroidization processing of single-crystal materials 11, but also provides a new solution for related scientific research and industrial applications.

[0061] Furthermore, the material of the grinding layer is the same as that of the single-crystal material 11 to be processed, or its hardness is greater than that of the single-crystal material 11 to be processed. The grinding layer can be understood as a layer of rough wear-resistant material coated on the inner side of the grinding chamber and on the side of the rotor 3 facing the grinding chamber to form the grinding layer. Specifically, the grinding layer is a diamond particle coating or a ceramic abrasive coating, making the inner wall itself a grinding surface. In addition, the grinding layer can also be sandpaper 5. In this embodiment, the grinding layer is sandpaper 5, and the sandpaper 5 is attached to the inside of the grinding chamber and the side of the rotor 3 facing the grinding chamber. The sandpaper 5 can be selected with different grits (coarseness) according to the initial shape and processing requirements of the single-crystal material 11 to balance the processing efficiency and surface quality. Coarse-grit sandpaper 5 is suitable for quickly removing sharp corners, while fine-grit sandpaper 5 is used for later polishing and finishing. In this example, the sandpaper 5 is 800-10,000 mesh. Under the continuous collision and friction between the single-crystal material 11 and the sandpaper 5, the protruding sharp corner parts of the single-crystal material 11 are gradually ground off, and the surface becomes more and more smooth and spherical. In addition, the grinding layer can also be understood as the inner wall of the grinding main body 1. In this case, the material of the grinding main body 1 is the same as that of the single-crystal material 11 to be processed, or its hardness is greater than that of the single-crystal material 11 to be processed.

[0062] In order to improve the processing efficiency, in some other embodiments, the present invention also introduces the design concept of multi-stage grinding. The sandpaper 5 on the inner wall of the grinding chamber adopts a modular replaceable structure, such as a reel. Different grit sandpaper 5 strips are pre-loaded on the inner wall of the reel. The particle size of the sandpaper 5 strips gradually decreases from bottom to top or from top to bottom. The degree of grinding is controlled by controlling the rise or fall of the rotor 3. At the beginning of processing, the coarser grit sandpaper 5 is first used to perform rapid prototyping grinding on the single crystal material 11. After the main edges and corners are removed, then the rotor 3 is raised or lowered to perform fine polishing on the single crystal material 11. This multi-stage progressive grinding method enables the surface of the single crystal material 11 to be gradually optimized, and the continuous realization from preliminary forming to final high surface finish is achieved within the same device.

[0063] In this example, the gas channels on the grinding main body 1 include a first gas channel 6 and a second gas channel 7. The first gas channel 6 is used to introduce inert gas or evacuate the vacuum. The second gas channel 7 is used to discharge the inert gas. The caliber of the second gas channel 7 is smaller than that of the first gas channel 6. Introducing inert gas and evacuating the vacuum into the grinding chamber are alternatives. Specifically, when choosing to introduce inert gas, the first gas channel 6 serves as the inlet of the inert gas, and the second gas channel 7 serves as the outlet of the inert gas; when choosing to evacuate the vacuum, the first gas channel 6 is the gas outlet, and the second gas channel 7 can be blocked. Evacuating the grinding chamber can fundamentally eliminate the oxidation problem on the surface of the single crystal material 11. Under vacuum conditions, since there is no air flow cooling, other cooling means can be added outside the grinding main body 1, such as covering with a circulating water cooling jacket or a heat pipe heat dissipation device (which can also be applied to the case of introducing inert gas), and the processing heat is conducted out through the wall of the grinding main body 1. In the vacuum scheme, the single crystal material 11 will not be oxidized, but attention should be paid to controlling the rotation speed of the rotor 3 and the processing time to avoid excessive accumulation of the sample temperature.

[0064] Furthermore, a gas nozzle quick connector 8 is installed at one end of the first channel away from the grinding main body 1, which can be connected to an inert gas source, such as a high-pressure argon gas cylinder.

[0065] A connecting support 9 is provided at the lower end of the grinding main body 1. The grinding main body 1 is connected to the bracket 2 through the connecting support 9. Specifically, the connecting support 9 includes a vertical support and a horizontal support. The upper end of the vertical support is connected to the lower end of the grinding main body 1, and the lower end is perpendicularly connected to the horizontal support. The horizontal support is detachably connected to the bracket 2. In this embodiment, three connecting supports 9 are provided, and the three connecting supports 9 are evenly distributed at the lower end thereof. The connecting support 9 supports the grinding main body 1, leaving a space between the grinding main body 1 and the bracket 2. When the rotor 3 exits the grinding chamber, it is convenient for the operator to place and take the single crystal material 11 from the rotor 3.

[0066] In this example, the bracket 2 includes an upper plate and a lower plate, which are vertically connected by four support bars. A through hole A is provided in the middle of the upper plate, and a through hole B is provided in the middle of the lower plate. The driving component 4 is located between the upper plate and the lower plate, and the driving component 4 is detachably connected to the upper plate. The working portion of the driving component 4 passes through the through hole A and is connected to the rotor 3. The top surface of the upper plate is connected to the connecting pillar 9, and a gap is left between the grinding body 1 and the upper plate. The lower plate is provided with a connecting strip for detachable connection with the processing platform. The connecting strip is provided with a bar interface. Bolts are passed through the bar interface to fix the connecting strip to the processing platform, thereby fixing the bracket 2.

[0067] Furthermore, the side of the rotor 3 facing the grinding chamber is a planar structure. Specifically, the rotor 3 includes a rotating shaft and a rotating disk. The side of the rotating disk facing away from the grinding chamber is connected to the rotating shaft, which is connected to the drive component 4. The rotating disk is a flat plate. Preferably, the rotor 3 is made of a high-strength and lightweight material and undergoes precise dynamic balancing to ensure stability and durability when operating at higher speeds.

[0068] Specifically, precise dynamic balancing calibration involves rigorous dynamic balancing calibration after machining of the rotor 3. By removing a small amount of material from the periphery of the rotor 3, the center of gravity of the rotor 3 is aligned with the axis of rotation during high-speed rotation, thereby eliminating unbalanced torque, ensuring the stability of the rotor 3 during high-speed rotation, and avoiding vibration and eccentricity. The present invention systematically optimizes the dynamic balancing of the rotor 3, including the following specific aspects:

[0069] Mass symmetric design: The rotor 3 adopts an axisymmetric structure during the mechanical design stage to ensure that its geometric center and mass center coincide as much as possible, and its thickness distribution remains symmetrical in the radial direction to avoid eccentric rotation caused by uneven mass distribution.

[0070] Symmetrical drilling or counterweight correction: If slight density differences or inconsistent machining tolerances exist in the rotor 3 materials due to process reasons, resulting in excessive dynamic balance deviation in the original prototype, fine-tuning counterweight slots are designed on the edge of the rotor 3. By slightly removing or adding counterweight materials (such as tungsten balls or copper plugs), mass compensation is achieved, bringing the dynamic balance accuracy to within ±0.01g·cm.

[0071] High-speed dynamic balance test: Use a laser vibrometer in conjunction with a high-speed dynamic balancer to perform dynamic detection on the rotor 3 after assembly. Under conditions close to the operating speed (such as 3000–6000 rpm), by measuring the radial vibration amplitude and phase difference, judge the eccentricity distribution of the rotor 3, and perform fine adjustment on the test platform to ensure that the maximum eccentricity displacement does not exceed 0.01 mm at the operating speed.

[0072] Bearing fit optimization: A high-precision fit is adopted between the rotating shaft of the rotor 3 and the motor shaft. In some embodiments, low-friction and high-rigidity ceramic ball bearings or magnetic levitation bearings are selected to reduce radial runout and axial end play, and improve the overall rotational stability and service life of the rotor 3.

[0073] Finite element simulation-assisted design: Introduce finite element simulation software (such as ANSYS or COMSOL) in the structural design stage to analyze the stress distribution, modal response, and vibration mode of the rotor 3 under high-speed rotation, and ensure that there are no risks such as resonance and structural instability at the upper limit of the rotational speed (for example, 7000 rpm).

[0074] In addition, in some other embodiments, the middle part of the side of the turntable facing the grinding chamber is recessed toward the side facing away from the grinding chamber, and the recess depth is 1–3 mm. Specifically, the turntable gradually concaves inward from its periphery to its middle to play a certain role in wrapping and guiding the single crystal material 11 during rotation, which helps to improve the device performance. The recess design helps the abrasive to apply a uniform force to the single crystal material during the grinding process, thereby improving the grinding efficiency and the surface grinding quality of the single crystal material. In addition, the recess design can increase the contact area between the abrasive and the single crystal material, such as increasing the contact area between the sandpaper on the rotor and the single crystal material, thereby improving the grinding efficiency.

[0075] The driving component 4 of the present invention uses a DC motor, but this is not limited to a DC motor. The driving component 4 can be replaced with other types of motors, such as a variable-frequency speed-regulating motor, a brushless motor, or not limited to motor drive, such as using magnetic coupling drive (the rotor 3 rotates through the transmission of magnetic torque, and there is a distance between the motor body and the rotor 3). Different driving implementation methods as long as they can provide the required high-speed rotation power for the rotor 3 and meet the installation space requirements belong to the equivalent deformation of the concept of the present invention.

[0076] In this example, sensors for detecting the motion state and temperature of the single crystal material 11 are provided inside the grinding main body 1. The motion state includes the impact frequency and vibration condition. Specifically, temperature sensors are installed at multiple positions inside the grinding chamber, such as positions close to the single crystal material 11, on the wall of the grinding chamber, etc., and the temperature sensors continuously monitor the temperature changes of the single crystal material 11 and the environment during the processing.

[0077] This device is equipped with an intelligent control module to achieve precise control and stable operation during the processing of single-crystal material 11. Once the temperature is detected to be approaching the set safety upper limit, the intelligent control module will automatically take measures to adjust the processing parameters, such as temporarily reducing the speed of the rotor 3 and increasing the flow rate of the inert gas, to reduce heat generation at the source. At the same time, for long-term continuous operation or higher cooling requirements, an additional cooling device can be integrated on the outer wall of the grinding main body 1 to keep the processing environment temperature stable within a safe range, that is, always lower than the recrystallization temperature of the single-crystal material 11. Through the above temperature control design, the single-crystal material 11 remains in a low-temperature and safe state throughout the processing process, greatly reducing the risk of phase change or performance degradation of the single-crystal material 11 caused by overheating.

[0078] The intelligent control module adjusts the speed and acceleration of the motor in real time according to the sensor feedback to meet the needs of the processing process. This adaptive speed control design ensures that the centrifugal force and collision intensity applied to the single-crystal material 11 are always within the optimal range: sufficient to grind the surface of the single-crystal material 11, yet not causing excessive impact damage to the single-crystal material 11 or generating excessive temperature. At the same time, the mechanical structure of the rotor 3 has been optimized for dynamic balance, maintaining extremely high stability during high-speed rotation, minimizing the impact of eccentric vibration on processing uniformity, and reducing mechanical wear and noise. This design combining intelligent control and high stability makes the processing process more controllable and reliable, further ensuring the quality and safety of the processing of the single-crystal material 11.

[0079] In addition, the wear degree of the sandpaper 5 is also monitored by a sensor. When it is detected that the sandpaper 5 is severely worn or has too much debris attached, affecting the grinding effect, the intelligent control module will remind the operator to replace the sandpaper 5 module, so as to always maintain good grinding performance.

[0080] Embodiment 2

[0081] This embodiment provides a single-crystal material processing device for a suspension device. Most of the content is the same as that in Embodiment 1. For details, refer to Embodiment 1. The difference is that, as Figures 5-7 shown, the side of the rotor 3 facing the grinding chamber is a planar structure, and radial centrifugal blades 10 are provided on this side. That is, radial centrifugal blades 10 are provided on the side of the rotor 3 facing the grinding chamber. The rotor 3 includes a rotating shaft and a turntable. The side of the turntable facing away from the grinding chamber is connected to the rotating shaft, and the rotating shaft is connected to a driving component. The turntable is a flat plate structure. The turntable is a circular plate structure, and the centrifugal blades 10 are arranged along the radius of the turntable, that is, one end of the centrifugal blade 10 is close to the center of the turntable, and the other end is close to the circumference of the turntable. The centrifugal blades 10 can enhance the throwing and disturbing effects on the single-crystal material, promoting the single-crystal material to impact the inner wall of the grinding chamber more evenly.

[0082] The centrifugal blade 10 is an arc-shaped sheet structure. There are multiple centrifugal blades 10, and the multiple centrifugal blades 10 are evenly arranged. In this example, there are six centrifugal blades 10.

[0083] Embodiment III

[0084] This embodiment provides a single crystal material processing device for a suspension device. Most of the content is the same as that in Embodiment I. For details, refer to Embodiment I. The difference is that there are multiple grinding bodies, rotors, and driving components, and they correspond to each other one by one. The grinding chambers of the multiple grinding body parts can be communicated, and switch components for blocking the communication are provided on the multiple grinding chambers; the multiple grinding chambers respectively perform staged grinding on the single crystal material. When a certain stage of grinding is completed, the switch component is opened, and the single crystal material enters another grinding chamber for grinding processing.

[0085] In this example, taking the case where there are two grinding bodies, rotors, and driving components as an example, the two grinding chambers are respectively a first grinding chamber and a second grinding chamber. The first grinding chamber uses coarser abrasives for rapid prototyping, and the second grinding chamber uses fine abrasives for fine polishing. By processing in stages and in separate chambers, the efficiency can be guaranteed while improving the surface quality.

[0086] The communication method of the multiple grinding chambers can adopt existing technical means. For example, the multiple grinding chambers are communicated through an inclined pipeline. When it is necessary to enter the grinding chamber for the next stage, the switch component is opened, and the rotor transfers the single crystal material into the inclined pipeline and enters another grinding chamber through the pipeline.

[0087] Embodiment IV

[0088] This embodiment provides a method for processing single crystal materials for a suspension device, which is used to realize real-time regulation, dynamic optimization, and high-quality output during the centrifugal grinding process of single crystal materials. The device in Embodiment I uses this method for processing. Taking the grinding of single crystal copper as an example, the single crystal copper is ground into a spherical shape with a diameter of 2.5 mm. This method includes:

[0089] Using the single crystal material processing device for a suspension device as described in Embodiment I, put the single crystal material into the grinding chamber. The abrasive paper used is 800 - 10000 mesh. In this example, abrasive paper with 2000 mesh is used. Input the single crystal material parameters into the single crystal material processing system. The single crystal material parameters include the type, initial shape, and size of the single crystal material. Specifically, the type of the single crystal material is single crystal copper, the initial shape is cylindrical, and the initial size is: diameter 3 mm, height 3 mm.

[0090] The system matches the preset rotor speed, processing time, gas flow rate of inert gas or vacuum degree of vacuum pumping according to the single crystal material parameters; in this example, inert gas is introduced, the rotor speed is 3000 - 4000 revolutions per minute, the rotor acceleration is 20 - 38 revolutions per minute squared, the processing time is 5 - 10 minutes, and the gas flow rate of inert gas is 2 - 3 liters per minute. In addition, the matched parameters can be adjusted and optimized according to user requirements. Among them, the processing time is related to the material hardness. Materials with high hardness are likely to cause sandpaper wear, and the processing time is generally set to 5 minutes. Materials with low hardness generally have a processing time of 10 minutes. After the processing is completed, observe the processed situation of the single crystal material, and change the sandpaper for reprocessing as appropriate; in this example, the preset rotor speed is 3000 revolutions per minute, the rotor acceleration is 38 revolutions per minute squared, the processing time is 6 minutes, and the gas flow rate of inert gas is 2 liters per minute.

[0091] Among them, the calculation formula for the preset rotor speed is:

[0092] n = n0k S k D k H

[0093] In the formula, n represents the rotor speed, with the unit of revolutions per minute; n0 represents the preset rotor speed, with the unit of revolutions per minute; k S represents the initial shape coefficient of the single crystal material. If the single crystal material to be processed is approximately spherical, then k S = 1. If it is approximately cylindrical, then k S = 1.5. If it is approximately cubic or any other shape, then k S = 1.25; k D represents the initial size coefficient of the processed single crystal material. When the maximum circumscribed length of the single crystal material to be processed is greater than 4 mm and less than 8 mm, k D = 0.75. When it is less than 4 mm, k D = 1; k H represents the hardness coefficient of the single crystal material to be processed. When the Vickers hardness of the material is greater than 100, k H = 0.75. When it is less than 100, k H = 1; in practical applications, k D and k H can be adjusted according to specific situations to achieve the best adjustment effect.

[0094] Before processing, various sensors (temperature, vibration, position detection) in the grinding chamber can be calibrated and enter the standby state.

[0095] An inert gas is introduced into the grinding chamber or the chamber is evacuated. In this example, an inert gas is introduced. Then, the driving component is started. Specifically, the driving motor is accelerated to a set rotational speed to generate a centrifugal force on the rotor for dynamic grinding of single-crystal copper. The single-crystal copper continuously impacts the sandpaper attached to the inner wall of the grinding chamber under the centrifugal force, realizing tool-free spheroidization processing.

[0096] During the processing, the intelligent controller adjusts the flow rate and pressure of the inert gas flow, dynamically regulating the temperature and cleanliness inside the grinding chamber. The temperature sensor monitors the ambient temperature of the single-crystal copper and inside the grinding chamber. If it exceeds the safety threshold, the system automatically reduces the rotational speed and increases the gas flow rate for cooling. Specifically, when the temperature inside the grinding chamber is greater than 50 °C, the gas flow rate of the inert gas is increased, and at the same time, the rotational speed of the rotor is reduced to half of the initial rotational speed. In this example, it is reduced to 1500 revolutions per minute. When the temperature inside the grinding chamber drops below 50 °C, the gas flow rate of the inert gas is adjusted to the initial gas flow rate, and at the same time, the rotational speed of the rotor is adjusted to the initial rotational speed. When the cleanliness inside the grinding chamber is greater than ISO6 (Standard No.: ISO 14644-1), the gas flow rate of the inert gas is increased. When the cleanliness inside the grinding chamber is restored, the gas flow rate of the inert gas is adjusted to the initial gas flow rate.

[0097] Among them, the flow rate of the inert gas is increased through the following expression:

[0098] Q = Q0 + max(0, k T (T - 50)) + max(0, k C (C - 6))

[0099] In the formula, Q represents the flow rate of the inert gas, with the unit of liters per minute; Q0 represents the initial flow rate of the inert gas, with the unit of liters per minute; T represents the temperature inside the grinding chamber, with the unit of degrees Celsius; C represents the cleanliness inside the grinding chamber, and the cleanliness is in ISO grade; k T represents the temperature coefficient, k C represents the cleanliness coefficient, k T and k C are both dimensionless variables characterizing the ratio, k T = k C = 0.1; in practical applications, the values of k T and k C can be adjusted according to specific circumstances to achieve the best adjustment effect.

[0100] In addition, during the processing, the vibration and impact frequencies of single-crystal copper are monitored simultaneously. An acceleration sensor or an optical displacement sensor is used to monitor the impact frequency and path distribution of single-crystal copper, and the processing uniformity is analyzed. By monitoring the impact frequency and path distribution, the force condition of single-crystal copper during the processing can be analyzed, thereby evaluating the processing uniformity. The real-time monitoring data can be used to dynamically adjust the processing parameters, such as rotation speed, acceleration, the dosage of inert gas, etc., to ensure that the processing process is always in the best state. Based on the results of data analysis, the processing process parameters can be continuously optimized to achieve continuous improvement.

[0101] When the temperature is abnormal or the preset processing time ends, the driving component is triggered to stop working, the inert gas supply is stopped, and the grinding effect of the sample is checked to determine whether it is necessary to replace the sandpaper and repeat the grinding. It should be noted that the abnormal temperature means that the temperature in the grinding chamber exceeds the preset temperature safety threshold. In this example, the preset temperature safety threshold is 80 °C.

[0102] After stopping work, the operator is prompted by a buzzer or the interface to take out the single-crystal copper, and then the processing device is cleaned, specifically by discharging the residual dust and sandpaper debris to prepare for the next processing cycle, that is, repeating the above method.

[0103] For the case of multi-stage grinding, after each processing cycle is completed, the sandpaper is replaced and the next stage of grinding is entered. The situation of replacing the sandpaper can be determined according to the grinding situation, and the particle size of the sandpaper used is adjusted to achieve rough grinding → medium grinding → fine polishing. In this example, there are 4 grinding stages, that is, the above method is repeated until the single-crystal copper is ground into a 2.5-mm sphere. The shape changes of the single-crystal material before, during, and after grinding in this example are as Figure 9 shown.

[0104] By monitoring the motion state and temperature during the processing of the single-crystal material, the control system can adaptively adjust the rotation speed, acceleration, etc. of the rotor, so that the grinding process is always in the best working condition. This not only improves the processing efficiency but also prevents damage to the material caused by excessive impact or overheating.

[0105] During the processing, the sharp edges on the surface of single-crystal materials with any shape can be gradually ground off, making the surface shape smoother. By adjusting the rotational speed of the rotor, it is ensured that the impact load on the material during processing is within the safe range, and severe stress concentration is avoided. The method of the present invention has perfect temperature monitoring and control measures. The temperature inside the processed single-crystal material and the grinding chamber is monitored in real time through temperature sensors. Once the temperature approaches the dangerous threshold of the single-crystal material, the system automatically adjusts the flow rate of the inert gas or the rotational speed to control the temperature within the safe threshold, avoiding instantaneous temperature changes to prevent the destruction of the lattice of the single-crystal material due to plastic deformation or the generation of cracks. When necessary, an additional cooling device is started to prevent the temperature from rising further. This measure ensures that the single-crystal material will not have problems such as recrystallization or microcracks due to overheating, realizing precise control of the material temperature during processing and ensuring that the processing is carried out within the safe temperature range.

[0106] Example 5

[0107] This example provides a method for processing single-crystal materials for a suspension device. Taking the grinding of single-crystal copper as an example, the single-crystal copper is ground into a spherical shape with a diameter of 3.5 mm. The device of Example 1 is used for processing, and the device is evacuated. Other cooling means are added outside the device. In this example, a jacketed circulating water cooling jacket is added. The cooling water in the cooling jacket is circulated by connecting to a chiller to achieve an effective cooling effect. The device uses 5000-mesh sandpaper. The specific method is as follows:

[0108] Put the single-crystal copper into the grinding chamber described in Example 1, and input the parameters of the single-crystal material, including the type of single-crystal material being single-crystal copper, the initial shape being a cube, and the initial size being 4 mm × 4 mm.

[0109] In a vacuum environment, the heat generated during processing can only be dissipated through thermal radiation. Therefore, the rotational speed of the rotor cannot be too high. The system matches a preset rotational speed of the rotor according to the parameters of the single-crystal material, which is preset to 2000 - 3000 revolutions per minute, and the vacuum degree is 10 -1 ~10 -2 Pa. In this example, the matched preset rotational speed of the rotor is 2500 revolutions per minute, the processing time is 10 minutes, and the vacuum degree is 10 -2 Pa.

[0110] Evacuate the grinding chamber to 10 -2 Pa, and then start the driving component.

[0111] During the grinding process, the chiller keeps the cooling water circulation on. When the temperature in the grinding chamber is greater than 50°C, the refrigeration function of the chiller is automatically started; when the temperature in the grinding chamber drops below 50°C, the refrigeration of the chiller is automatically turned off; when the cleanliness in the grinding chamber is greater than ISO6, the pumping rate of the vacuum pump is increased to extract the pollutants in the grinding chamber. When the cleanliness in the grinding chamber is restored, the pumping rate of the vacuum pump is adjusted back to the normal level;

[0112] When the preset processing time ends, the driving component is triggered to stop working. Check the grinding effect of the sample and determine whether it is necessary to replace the sandpaper and repeat the grinding. If continuous grinding is required, repeat the above method.

[0113] The above embodiments are only illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A single crystal material processing device for a suspension device, characterized in that, include: A grinding body fixed on the bracket, wherein a grinding chamber is provided in the grinding body and the grinding chamber passes through the bottom of the grinding body; a rotor, the rotor sealing the lower end of the grinding chamber, the rotor being used to drive the single crystal material to be processed to perform centrifugal motion in the grinding chamber; a gas channel being provided on the grinding body, the gas channel being used for inert gas to enter and exit the grinding chamber or for vacuuming; A driving component fixed to the bracket, wherein the driving component drives the rotor to rotate; The grinding material is a grinding layer provided inside the grinding chamber and on the side of the rotor facing the grinding chamber, and / or grinding particles located in the grinding chamber.

2. The single crystal material processing device for a suspension device according to claim 1, characterized in that, The grinding layer is made of the same material as the single crystal material to be processed, or its hardness is greater than that of the single crystal material to be processed.

3. A single crystal material processing device for a suspension device according to claim 1, characterized in that, The grinding layer is a diamond particle coating, a ceramic abrasive coating or sandpaper.

4. A single crystal material processing device for a suspension device according to claim 1, characterized in that, The abrasive particles are made of the same material as the single crystal material to be processed or a material with a harder hardness than the single crystal material to be processed.

5. A single crystal material processing apparatus for a suspension device according to claim 1, characterized in that, A connecting pillar is provided at the lower end of the grinding body, and the grinding body is connected to the bracket through the connecting pillar.

6. The single crystal material processing device for a suspension device according to claim 1, characterized in that, The side of the rotor facing the grinding chamber is a planar structure, and radial centrifugal blades are provided on this side.

7. A single crystal material processing apparatus for a suspension device according to claim 1, characterized in that, The rotor includes a rotating shaft and a rotating disk. The side of the rotating disk facing away from the grinding chamber is connected to the rotating shaft. The rotating shaft is connected to the driving component. The middle part of the side of the rotating disk facing the grinding chamber is recessed toward the side facing away from the grinding chamber, and the recessed depth is 1 to 3 mm.

8. A single crystal material processing apparatus for a suspension device according to claim 1, characterized in that, The grinding bodies, the rotors, and the driving components are each provided in plurality and correspond to each other one by one. The grinding chambers of the plurality of grinding bodies can be connected, and the plurality of grinding chambers are each provided with a switch component for blocking the connection. The plurality of grinding chambers respectively grind the single crystal material in stages. When a certain stage of grinding is completed, the switch component is opened, and the single crystal material enters another grinding chamber for grinding.

9. A single crystal material processing method for a suspension device, characterized in that, include: Using the single crystal material processing device for a suspension device according to any one of claims 1 to 8, placing a single crystal material into the grinding chamber, and inputting single crystal material parameters into the single crystal material processing system, the single crystal material parameters including the type, initial shape, and size of the single crystal material; The system matches the preset rotor speed, processing time, gas flow rate of inert gas or vacuum degree of vacuum pumping according to the single crystal material parameters. The gas flow rate of inert gas is 2 to 3 liters per minute, and the vacuum degree is 10 -1 ~10 -2 Pa; if inert gas is used, the preset rotor speed is matched to be 3000 to 4000 revolutions per minute. If vacuum pumping is used, the preset rotor speed is preset to be 2000 to 3000 revolutions per minute, and the rotor acceleration is 20 to 38 revolutions per minute squared; the processing time is 5 to 10 minutes; Introduce inert gas or vacuum into the grinding chamber and start the driving component; If inert gas is introduced into the grinding chamber: when the temperature in the grinding chamber is greater than 50°C, increase the inert gas flow rate and reduce the rotor speed to half of the initial speed; when the temperature in the grinding chamber drops below 50°C, adjust the inert gas flow rate to the initial flow rate and adjust the rotor speed to the initial speed; when the cleanliness level in the grinding chamber is greater than ISO 6, increase the inert gas flow rate; when the cleanliness level in the grinding chamber is restored, adjust the inert gas flow rate to the initial flow rate; If the grinding chamber is selected to be evacuated: When the temperature in the grinding chamber is greater than 50°C, the refrigeration function of the chiller is automatically started; when the temperature in the grinding chamber drops below 50°C, the refrigeration of the chiller is automatically turned off; when the cleanliness in the grinding chamber is greater than ISO6, the pumping rate of the vacuum pump is increased to extract the pollutants in the grinding chamber, and when the cleanliness in the grinding chamber is restored, the pumping rate of the vacuum pump is adjusted back to the normal level; When the temperature is abnormal or the preset processing time ends, stop working; Repeat the above steps until spherical single crystal materials are obtained.

10. A single crystal material processing method for a suspension device according to claim 9, characterized in that, Before processing, the calculation formula for matching the preset rotor speed is: n = n0k S k D k H Wherein, n represents the rotor speed, with the unit of revolutions per minute; n0 represents the preset rotor speed, with the unit of revolutions per minute; k S represents the initial shape coefficient of the single crystal material. If the single crystal material to be processed is approximately spherical, then k S = 1. If it is approximately cylindrical, then k S = 1.

5. If it is approximately cubic or any other shape, then k S = 1.25; k D represents the initial size coefficient of the single crystal material to be processed. When the maximum circumscribed length of the single crystal material to be processed is greater than 4 mm and less than 8 mm, k D = 0.

75. When it is less than 4 mm, k D = 1; k H represents the hardness coefficient of the single crystal material to be processed. When the Vickers hardness of the material is greater than 100, k H = 0.

75. When it is less than 100, k H = 1; During the processing, the formula for increasing the gas flow rate of the inert gas is as follows: Q = Q0 + max(0, k T (T - 50)) + max(0, k C (C - 6)) Wherein, Q represents the flow rate of the inert gas, in liters per minute; Q0 represents the initial flow rate of the inert gas, in liters per minute; T represents the temperature in the grinding chamber, in degrees Celsius; C represents the cleanliness in the grinding chamber; k T represents the temperature coefficient, k C represents the cleanliness coefficient, k T and k C are both dimensionless variables characterizing the ratio, k T = k C = 0.1.

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