Passive wireless temperature sensor with bistable structure

Abstract

The invention discloses a passive wireless temperature sensor with a bistable structure. The temperature sensor comprises a flexible porous dielectric layer, a metal electrode, a bistable structure beam, a beam end anchoring part, a bistable structure beam anchoring area, a metal wire, a planar inductor and a substrate. The bistable structural beam is bent upwards in an initial state and forms a plate capacitor with the metal electrode. And when the temperature reaches the lower limit temperature of the temperature interval, the bistable structural beam is changed into a downward bending shape from an upward bending shape. The sharp reduction of the distance between the bistable structural beam and the metal electrode causes the sharp increase of the capacitance value of the plate capacitor, so that the resonant frequency of an LC resonant circuit formed by the plate capacitor and the planar inductor suddenly changes, and the judgment of a temperature interval is realized. And in each temperature interval, the corresponding bistable structure beam continuously bends downwards and extrudes the flexible porous dielectric layer along with the rise of the temperature, so that the capacitance is changed, and the wide-range, temperature-zone-divided and high-precision continuous temperature measurement is realized.

Description

Technical Field

[0001] The present invention belongs to the technical field of sensors, and in particular relates to a passive wireless temperature sensor with a bistable structure. Background Art

[0002] Temperature sensors are widely used in many fields such as modern industry, agricultural production, Internet of Things, wearable devices, aerospace, etc. In recent years, the development of temperature sensors has tended towards the multi-functional integration of distributed sensor nodes, and the active wired principle will greatly limit the application scenarios of temperature sensors. Most traditional temperature sensors require external power supply, and there are problems such as high maintenance cost, complex circuit, and large volume. These obstacles limit the long-term stable operation and wide application in multiple scenarios of temperature sensors. Passive wireless temperature sensors have the advantages of simple structure, small size, no need for external power supply, and distributed measurement. Due to the limitations of measurement range and principle accuracy, most existing passive wireless temperature sensors are difficult to achieve wide-range and high-precision temperature measurement. Therefore, at present when temperature sensors are widely used, it is of great application value to develop a passive wireless temperature sensor with a simple structure, wide range, and high precision. Summary of the Invention

[0003] In view of this, in order to solve the problems existing in the prior art, the present invention provides a passive wireless temperature sensor with a bistable structure to solve the problems such as low range, poor accuracy, and complex structure faced by current temperature sensors. The bistable structure beam is bent upward in the initial state and forms a parallel plate capacitor with the metal electrode. When the temperature reaches the lower limit temperature of the temperature range, the bistable structure beam changes from the upward-bent state to the downward-bent state. The rapid decrease in the distance between the bistable structure beam and the metal electrode leads to a rapid increase in the capacitance value of the parallel plate capacitor, causing a sudden change in the resonance frequency of the LC resonance circuit composed of the parallel plate capacitor and the planar inductor, realizing the determination of the temperature range. Within each temperature range, as the temperature rises, the corresponding bistable structure beam continuously bends downward and presses the flexible porous dielectric layer, resulting in capacitance changes, realizing wide-range, temperature-zone division, and high-precision continuous temperature measurement. The bistable structure temperature sensor of the present invention adopts the principle of temperature-bistable structure beam mutation segmented range and temperature-bistable structure beam-capacitance continuous change after mutation, and has the advantages of high precision, wide range, and simple structure.

[0004] In order to achieve the above object, the technical solution of the present invention is as follows. A passive wireless temperature sensor with a bistable structure includes: a flexible porous dielectric layer, a metal electrode, a bistable structure beam, a beam end anchor, a bistable structure beam anchor area, a metal wire, a planar inductor, and a substrate.

[0005] The passive wireless temperature sensor with a bistable structure is placed on the substrate as a whole. This solution uses a bistable beam structure to achieve continuous temperature measurement over a wide range in different temperature zones, enabling temperature zone determination and highly sensitive temperature measurement within each temperature range.

[0006] As an improvement of the present invention, the bistable structure beam includes a first bistable structure beam, a second bistable structure beam, a third bistable structure beam, a fourth bistable structure beam, and a fifth bistable structure beam. Among them, the first bistable structure beam includes a first passive layer and a first active layer; the second bistable structure beam includes a second passive layer and a second active layer; the third bistable structure beam includes a third passive layer and a third active layer; the fourth bistable structure beam includes a fourth passive layer and a fourth active layer; the fifth bistable structure beam includes a fifth passive layer and a fifth active layer; the bistable structure beam is composed of a thermal bimetal sheet formed by an active layer and a passive layer. The present invention uses multiple bistable beam structures to achieve temperature discrimination and wide-range temperature measurement in multiple temperature zones, and uses a flexible porous dielectric layer to achieve highly sensitive continuous temperature measurement within each temperature zone.

[0007] As an improvement of the present invention, the beam end anchor includes a first beam end anchor, a second beam end anchor, a third beam end anchor, a fourth beam end anchor, a fifth beam end anchor, a sixth beam end anchor, a seventh beam end anchor, an eighth beam end anchor, a ninth beam end anchor, and a tenth beam end anchor.

[0008] As an improvement of the present invention, the bistable structure beam anchor area includes a first bistable structure beam anchor area and a second bistable structure beam anchor area. Both the first bistable structure beam anchor area and the second bistable structure beam anchor area are fixed on the substrate.

[0009] As an improvement of the present invention, the metal wire includes a first metal wire, a second metal wire, and a third metal wire. The first metal wire, the second metal wire, and the third metal wire are all fixed on the substrate.

[0010] As an improvement of the present invention, the flexible porous dielectric layer is fixed on the metal electrode. The first beam end anchor, the second beam end anchor, the third beam end anchor, the fourth beam end anchor, and the fifth beam end anchor are all fixed on the first bistable structure beam anchor area. The sixth beam end anchor, the seventh beam end anchor, the eighth beam end anchor, the ninth beam end anchor, and the tenth beam end anchor are all fixed on the second bistable structure beam anchor area. The first passive layer, the second passive layer, the third passive layer, the fourth passive layer, and the fifth passive layer are adhesively bonded to the first active layer, the second active layer, the third active layer, the fourth active layer, and the fifth active layer respectively, up and down. One end of the first bistable structure beam is connected to the first beam end anchor, and the other end of the first bistable structure beam is connected to the sixth beam end anchor. One end of the second bistable structure beam is connected to the second beam end anchor, and the other end of the second bistable structure beam is connected to the seventh beam end anchor. One end of the third bistable structure beam is connected to the third beam end anchor, and the other end of the third bistable structure beam is connected to the eighth beam end anchor. One end of the fourth bistable structure beam is connected to the fourth beam end anchor, and the other end of the fourth bistable structure beam is connected to the ninth beam end anchor. One end of the fifth bistable structure beam is connected to the fifth beam end anchor, and the other end of the fifth bistable structure beam is connected to the tenth beam end anchor. One end of the first metal wire is connected to the first bistable structure beam anchor area, and the other end of the first metal wire is connected to the second bistable structure beam anchor area. One end of the second metal wire is connected to the metal electrode, and the other end of the second metal wire is connected to one end of the planar inductor. One end of the third metal wire is connected to the first metal wire, and the other end of the third metal wire is connected to the other end of the planar inductor.

[0011] As an improvement of the present invention, the method of using the sensor includes the following steps:

[0012] Step S1: The bistable structure beam is composed of a bimetallic strip formed by an active layer and a passive layer, where the active layer has a large coefficient of thermal expansion and the passive layer has a small coefficient of thermal expansion. The bistable structure beam is bent upward in the initial state to form an initial prestress and constitutes a planar capacitor with the metal electrode. When the temperature reaches the lower limit temperature of the first temperature range, the deformation of the first active layer is greater than that of the first passive layer, causing the first bistable structure beam to change from an upward-bent state to a downward-bent state. The distance between the first bistable structure beam and the metal electrode decreases sharply, resulting in a sharp increase in the capacitance value of the planar capacitor between them, causing the resonance frequency of the LC resonance circuit composed of the planar capacitor and the planar inductor to mutate, thereby realizing the determination of the first temperature range.

[0013] Step S2: Within the first temperature range, during the process of the temperature continuously rising to the upper limit temperature of the first temperature range, the first bistable structure beam continuously bends downward and squeezes the flexible porous dielectric layer, resulting in a change in capacitance and realizing high-precision continuous temperature measurement within the first temperature range.

[0014] Step S3: When the temperature reaches the lower limit temperatures of the second, third, fourth, and fifth temperature ranges in sequence, the second bistable structure beam, the third bistable structure beam, the fourth bistable structure beam, and the fifth bistable structure beam are sequentially transformed from an upward-bending state to a downward-bending state, respectively realizing the determination of the second, third, fourth, and fifth temperature ranges. During the process of the temperature rising to the upper limit temperature of each temperature range, the second bistable structure beam, the third bistable structure beam, the fourth bistable structure beam, and the fifth bistable structure beam continuously bend downward and squeeze the flexible porous dielectric layer, resulting in a change in capacitance, and realizing wide-range, temperature-zone-separated, and high-precision continuous temperature measurement.

[0015] Beneficial effects:

[0016] Compared with the prior art, the passive wireless temperature sensor with a bistable structure provided by the technical solution of the present invention has the advantages of sensitive response, high precision, and wide range. The bistable structure beam is in an upward-bending state in the initial state and forms a parallel-plate capacitor with the metal electrode. When the temperature reaches the lower limit temperature of the temperature range, the bistable structure beam is transformed from an upward-bending state to a downward-bending state. The sharp decrease in the distance between the bistable structure beam and the metal electrode leads to a sharp increase in the capacitance value of the parallel-plate capacitor, causing a sudden change in the resonance frequency of the LC resonance circuit composed of the parallel-plate capacitor and the planar inductor, and realizing the determination of the temperature range. Within each temperature range, as the temperature rises, the corresponding bistable structure beam continuously bends downward and squeezes the flexible porous dielectric layer, resulting in a change in capacitance, and realizing wide-range, temperature-zone-separated, and high-precision continuous temperature measurement. The bistable structure temperature sensor of the present invention adopts the principle of temperature-bistable structure beam mutation segmented range and temperature-bistable structure beam-capacitance continuous change after mutation, and has the advantages of high precision, wide range, simple structure, and process compatibility. Description of the drawings

[0017] Figure 1 It is a schematic structural diagram of a passive wireless temperature sensor with a bistable structure provided in the present invention.

[0018] Figure 2 It is a sectional view taken along line A-A' of a passive wireless temperature sensor with a bistable structure provided in the present invention.

[0019] Figure 3 It is a sectional view taken along line B-B' of a passive wireless temperature sensor with a bistable structure provided in the present invention

[0020] Figure 4 It is a sectional view taken along line A-A' after deformation of a passive wireless temperature sensor with a bistable structure provided in the present invention.

[0021] Figure 5A-A' sectional view of a bistable passive wireless temperature sensor provided in the present invention after deformation and extrusion of a flexible porous dielectric layer.

[0022] The description in the figure is as follows:

[0023] 1. Flexible porous dielectric layer; 2. Metal electrode; 311. First passive layer; 312. First active layer; 321. Second passive layer; 322. Second active layer; 331. Third passive layer; 332. Third active layer; 341. Fourth passive layer; 342. Fourth active layer; 351. Fifth passive layer; 352. Fifth active layer; 41. First beam end anchor; 42. Second beam end anchor; 43. Third beam end anchor; 44. Fourth beam end anchor; 45. Fifth beam end anchor; 46. Sixth beam end anchor; 47. Seventh beam end anchor; 48. Eighth beam end anchor; 49. Ninth beam end anchor; 410. Tenth beam end anchor; 51. First bistable structure beam anchor area; 52. Second bistable structure beam anchor area; 61. First metal wire; 62. Second metal wire; 63. Third metal wire; 7. Planar inductor; 8. Substrate. Detailed implementation mode

[0024] To deepen the understanding of the present invention, the following will make a detailed description of this embodiment in conjunction with the accompanying drawings:

[0025] Embodiment 1: Refer to Figure 1 , Figure 2 , Figure 5 , this embodiment provides a bistable passive wireless temperature sensor, and this bistable structure temperature sensor includes:

[0026] Flexible porous dielectric layer 1, metal electrode 2, bistable structure beam, beam end anchor, bistable structure beam anchor area, metal wire, planar inductor 7, substrate 8.

[0027] The bistable structure beam includes a first bistable structure beam, a second bistable structure beam, a third bistable structure beam, a fourth bistable structure beam, and a fifth bistable structure beam. Among them, the first bistable structure beam includes a first passive layer 311 and a first active layer 312; the second bistable structure beam includes a second passive layer 321 and a second active layer 322; the third bistable structure beam includes a third passive layer 331 and a third active layer 332; the fourth bistable structure beam includes a fourth passive layer 341 and a fourth active layer 342; the fifth bistable structure beam includes a fifth passive layer 351 and a fifth active layer  352.

[0028] Beam end anchorages, including the first beam end anchorage 41, the second beam end anchorage 42, the third beam end anchorage 43, the fourth beam end anchorage 44, the fifth beam end anchorage 45, the sixth beam end anchorage 46, the seventh beam end anchorage 47, the eighth beam end anchorage 48, the ninth beam end anchorage 49, and the tenth beam end anchorage 410.

[0029] Bistable structure beam anchorage areas, including the first bistable structure beam anchorage area 51 and the second bistable structure beam anchorage area 52.

[0030] Metal wires, including the first metal wire 61, the second metal wire 62, and the third metal wire 63.

[0031] The flexible porous dielectric layer 1 is fixed on the metal electrode 2. The first beam end anchorage 41, the second beam end anchorage 42, the third beam end anchorage 43, the fourth beam end anchorage 44, and the fifth beam end anchorage 45 are all fixed on the first bistable structure beam anchorage area 51. The sixth beam end anchorage 46, the seventh beam end anchorage 47, the eighth beam end anchorage 48, the ninth beam end anchorage 49, and the tenth beam end anchorage 410 are all fixed on the second bistable structure beam anchorage area 52. The first passive layer 311, the second passive layer 321, the third passive layer 331, the fourth passive layer 341, and the fifth passive layer 351 are adhesively bonded to the first active layer 312, the second active layer 322, the third active layer 332, the fourth active layer 342, and the fifth active layer 352 respectively, up and down. One end of the first bistable structure beam is connected to the first beam end anchorage 41, and the other end of the first bistable structure beam is connected to the sixth beam end anchorage 46. One end of the second bistable structure beam is connected to the second beam end anchorage 42, and the other end of the second bistable structure beam is connected to the seventh beam end anchorage 47. One end of the third bistable structure beam is connected to the third beam end anchorage 43, and the other end of the third bistable structure beam is connected to the eighth beam end anchorage 48. One end of the fourth bistable structure beam is connected to the fourth beam end anchorage 44, and the other end of the fourth bistable structure beam is connected to the ninth beam end anchorage 49. One end of the fifth bistable structure beam is connected to the fifth beam end anchorage 45, and the other end of the fifth bistable structure beam is connected to the tenth beam end anchorage 410. One end of the first metal wire 61 is connected to the first bistable structure beam anchorage area 51, and the other end of the first metal wire 61 is connected to the second bistable structure beam anchorage area 52. One end of the second metal wire 62 is connected to the metal electrode 2, and the other end of the second metal wire 62 is connected to one end of the planar inductor 7. One end of the third metal wire 63 is connected to the first metal wire 61, and the other end of the third metal wire 63 is connected to the other end of the planar inductor 7.

[0032] The usage method of a passive wireless temperature sensor with a bistable structure according to this embodiment includes the following steps:

[0033] Step S1, refer toFigures 1 - 3 The bistable structure beam is composed of a thermal bimetal sheet consisting of an active layer and a passive layer, where the active layer has a large coefficient of thermal expansion and the passive layer has a small coefficient of thermal expansion. The bistable structure beam is bent upward in the initial state to form an initial prestress and constitutes a parallel-plate capacitor with the metal electrode 2. When the temperature reaches the lower limit temperature of the first temperature range, the deformation of the first active layer 312 is greater than that of the first passive layer 311, causing the first bistable structure beam to change from an upward-bent shape to a downward-bent shape. The distance between the first bistable structure beam and the metal electrode 2 decreases sharply, resulting in a sharp increase in the capacitance value of the parallel-plate capacitor between them, causing a sudden change in the resonance frequency of the LC resonance circuit composed of the parallel-plate capacitor and the planar inductor 7, thereby realizing the determination of the first temperature range.

[0034] Step S2, refer to Figure 4 In the first temperature range, during the process of continuously increasing the temperature to the upper limit temperature of the first temperature range, the first bistable structure beam continuously bends downward and presses the flexible porous dielectric layer 1, resulting in a change in capacitance, realizing high-precision continuous temperature measurement within the first temperature range.

[0035] Step S3, when the temperature reaches the lower limit temperatures of the second, third, fourth, and fifth temperature ranges in sequence, the second bistable structure beam, the third bistable structure beam, the fourth bistable structure beam, and the fifth bistable structure beam change from an upward-bent shape to a downward-bent shape in sequence, respectively realizing the determination of the second, third, fourth, and fifth temperature ranges. During the process of increasing the temperature to the upper limit temperature of each temperature range with the increase of temperature, the second bistable structure beam, the third bistable structure beam, the fourth bistable structure beam, and the fifth bistable structure beam respectively continuously bend downward and press the flexible porous dielectric layer 1, resulting in a change in capacitance, realizing wide-range, temperature-zone-separated, and high-precision continuous temperature measurement.

[0036] In summary, a passive wireless temperature sensor with a bistable structure in the present invention is different from other temperature sensors. The bistable structure temperature sensor has the following main characteristics: First, the shape of the bistable structure beam changes suddenly at the threshold temperature to realize the determination of the temperature range; Second, the bistable structure beam presses the flexible porous dielectric layer within the temperature range to realize high-precision continuous temperature measurement; Third, multi-temperature range measurement is realized through five bistable structure beams, having the advantage of a wide range; Fourth, the bistable structure temperature sensor can be compatible with traditional MEMS processes, is simple to manufacture, has a reliable structure, and can meet the application requirements of miniaturization and integration.

[0037] The criteria for distinguishing whether it is this structure are as follows:

[0038] (a) The shape changes suddenly at the threshold temperature by using a bistable structure beam;

[0039] (b) Achieving high-precision continuous temperature measurement through the extrusion deformation of a flexible porous dielectric layer;

[0040] (c) Achieving temperature measurement with a wide range and divided temperature zones through five bistable structure beams.

[0041] A structure that meets the above three conditions should be regarded as the bistable structure temperature sensor of this structure.

[0042] Where the present invention is not described in detail are all well-known technologies to those skilled in the art.

[0043] The preferred specific embodiments of the present invention have been described in detail above. It should be understood that those of ordinary skill in the art can make many modifications and variations based on the concept of the present invention without creative labor. Therefore, all technical solutions that can be obtained by those skilled in the art in the technical field of the present invention through logical analysis, reasoning, or limited experiments based on the concept of the present invention on the basis of the prior art should be within the protection scope determined by the claims.

Claims

1. A passive wireless temperature sensor with a bistable structure, characterized in that The bistable structure temperature sensor includes a flexible porous dielectric layer (1), metal electrodes (2), a bistable structure beam, beam end anchors, a bistable structure beam anchor area, metal wires, a planar inductor (7), and a substrate (8). The flexible porous dielectric layer (1) is fixed on the metal electrodes (2), and the metal electrodes, the bistable structure beam anchor area, the metal wires, and the planar inductor are all fixed on the substrate.

2. The passive wireless temperature sensor with a bistable structure according to claim 1, characterized in that The bistable structure beam includes a first bistable structure beam, a second bistable structure beam, a third bistable structure beam, a fourth bistable structure beam, and a fifth bistable structure beam. Among them, the first bistable structure beam includes a first passive layer (311) and a first active layer (312); the second bistable structure beam includes a second passive layer (321) and a second active layer (322); the third bistable structure beam includes a third passive layer (331) and a third active layer (332); the fourth bistable structure beam includes a fourth passive layer (341) and a fourth active layer (342); the fifth bistable structure beam includes a fifth passive layer (351) and a fifth active layer (352); the bistable structure beam is composed of a thermal bimetal sheet formed by an active layer and a passive layer.

3. The passive wireless temperature sensor with a bistable structure according to claim 2, characterized in that, The beam end anchors include a first beam end anchor (41), a second beam end anchor (42), a third beam end anchor (43), a fourth beam end anchor (44), a fifth beam end anchor (45), a sixth beam end anchor (46), a seventh beam end anchor (47), an eighth beam end anchor (48), a ninth beam end anchor (49), and a tenth beam end anchor (410).

4. The passive wireless temperature sensor with a bistable structure according to claim 3, characterized in that, The bistable structure beam anchor area includes a first bistable structure beam anchor area (51) and a second bistable structure beam anchor area (52). The first bistable structure beam anchor area (51) and the second bistable structure beam anchor area (52) are both fixed on the substrate (8).

5. The passive wireless temperature sensor with a bistable structure according to claim 4, characterized in that, The metal wires include a first metal wire (61), a second metal wire (62), and a third metal wire (63). The first metal wire (61), the second metal wire (62), and the third metal wire (63) are all fixed on the substrate (8).

6. The passive wireless temperature sensor with a bistable structure according to claim 5, characterized in that, The flexible porous dielectric layer (1) is fixed on the metal electrode (2). The first beam end anchor (41), the second beam end anchor (42), the third beam end anchor (43), the fourth beam end anchor (44), and the fifth beam end anchor (45) are all fixed on the first bistable structure beam anchor area (51). The sixth beam end anchor (46), the seventh beam end anchor (47), the eighth beam end anchor (48), the ninth beam end anchor (49), and the tenth beam end anchor (410) are all fixed on the second bistable structure beam anchor area (52). The first passive layer (311), the second passive layer (321), the third passive layer (331), the fourth passive layer (341), and the fifth passive layer (351) are adhesively bonded to the first active layer (312), the second active layer (322), the third active layer (332), the fourth active layer (342), and the fifth active layer (352) respectively, up and down. One end of the first bistable structure beam is connected to the first beam end anchor (41), and the other end of the first bistable structure beam is connected to the sixth beam end anchor (46). One end of the second bistable structure beam is connected to the second beam end anchor (42), and the other end of the second bistable structure beam is connected to the seventh beam end anchor (47). One end of the third bistable structure beam is connected to the third beam end anchor (43), and the other end of the third bistable structure beam is connected to the eighth beam end anchor (48). One end of the fourth bistable structure beam is connected to the fourth beam end anchor (44), and the other end of the fourth bistable structure beam is connected to the ninth beam end anchor (49). One end of the fifth bistable structure beam is connected to the fifth beam end anchor (45), and the other end of the fifth bistable structure beam is connected to the tenth beam end anchor (410). One end of the first metal wire (61) is connected to the first bistable structure beam anchor area (51), and the other end of the first metal wire (61) is connected to the second bistable structure beam anchor area (52). One end of the second metal wire (62) is connected to the metal electrode (2), and the other end of the second metal wire (62) is connected to one end of the planar inductor (7). One end of the third metal wire (63) is connected to the first metal wire (61), and the other end of the third metal wire (63) is connected to the other end of the planar inductor (7).

7. A passive wireless temperature sensor with a bistable structure according to claim 1, characterized in that, The method of using the sensor includes the following steps: Step S1: The bistable structural beam is composed of a thermal bimetal sheet consisting of an active layer and a passive layer. Among them, the active layer has a large coefficient of thermal expansion, and the passive layer has a small coefficient of thermal expansion. The bistable structural beam is bent upward in the initial state to form an initial prestress and constitutes a planar capacitor with the metal electrode (2). When the temperature reaches the lower limit temperature of the first temperature range, the deformation of the first active layer (312) is greater than that of the first passive layer (311), causing the first bistable structural beam to change from an upward-bending state to a downward-bending state. The distance between the first bistable structural beam and the metal electrode (2) decreases sharply, resulting in a sharp increase in the capacitance value of the planar capacitor between the two, causing the resonance frequency of the LC resonance circuit composed of the planar capacitor and the planar inductor (7) to mutate, thereby realizing the determination of the first temperature range. Step S2: Within the first temperature range, during the process of the temperature continuously rising to the upper limit temperature of the first temperature range, the first bistable structural beam continuously bends downward and presses the flexible porous dielectric layer (1), resulting in a change in capacitance, realizing high-precision continuous temperature measurement within the first temperature range. Step S3: When the temperature reaches the lower limit temperatures of the second, third, fourth, and fifth temperature ranges in sequence, the second bistable structural beam, the third bistable structural beam, the fourth bistable structural beam, and the fifth bistable structural beam change from an upward-bending state to a downward-bending state in sequence, respectively realizing the determination of the second, third, fourth, and fifth temperature ranges. During the process of the temperature rising to the upper limit temperature of each temperature range within each temperature range, the second bistable structural beam, the third bistable structural beam, the fourth bistable structural beam, and the fifth bistable structural beam continuously bend downward and press the flexible porous dielectric layer (1), respectively, resulting in a change in capacitance, realizing wide-range, temperature-zone-separated, and high-precision continuous temperature measurement.

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