A read-write reliability testing method for non-volatile memory

Abstract

The present invention discloses a read-write reliability test method for a non-volatile memory, and relates to the technical field of memory testing. The method comprises: obtaining the operating environment parameters and operating intensity parameters of the target memory to obtain an environment information item and an intensity information item; dividing the environment information item and the intensity information item into stages, dividing them into at least two environment stage items and at least two intensity stage items, to obtain an environment stage set and an intensity stage set. The present invention comprehensively considers the operating environment parameters of the target memory, such as temperature and voltage fluctuations, and operating intensity parameters, such as read-write frequency and network supply, obtains the environment information item and the intensity information item and divides them into stages, and obtains a test environment set by combination, performs read-write performance tests under different test environments, and obtains a first test information set, which can comprehensively and accurately reflect the performance of the memory under various actual working conditions.

Description

Technical Field

[0001] The present invention relates to the technical field of memory testing, and in particular to a method for testing the read and write reliability of a non-volatile memory. Background Art

[0002] Memory, also often referred to as internal memory, is a device or area in a computer system used to temporarily store data and programs. Its function is to allow the computer to quickly access the data and instructions required by the running program to ensure the normal operation and efficient processing of the system. Non-volatile memory is a type of storage device or material that can still store data after power is off. Its characteristic is that after the power is turned off, the data stored in it is still retained and will not be lost. Common non-volatile memories include hard disk drives and solid-state drives, which are used to store large amounts of data for a long time.

[0003] Patent publication number CN119541611A discloses a read / write test method, device, and storage medium for a memory storage device. By configuring multiple test threads for a memory storage device, each test thread can test the row area of ​​at least one row. Thus, when multiple test threads are synchronously called to test the same memory storage device, the feedback of the test results of a single memory storage device at different storage locations can be accelerated, thereby increasing the probability of discovering the memory storage device failure point in advance, thereby improving the test efficiency. At this time, since the test efficiency of a single memory storage device is improved, the overall test efficiency will be improved when multiple memory storage devices are tested. Compared with the method of providing a test environment for multiple memory storage devices, the test cost is lower. Therefore, the test efficiency of the embodiment of the present application is higher and the test cost is lower.

[0004] When the above-mentioned and similar technical solutions are used to test the read and write performance of the memory, fixed data is used for testing, while the working environment of the memory is not fixed but is in a constantly fluctuating state. At this time, the test results obtained cannot reflect the true performance of the memory. At the same time, due to the capacitive coupling effect of the memory cell, even if the test is performed by changing the test environment and changing the test intensity, the read and write performance test of the memory will still be inaccurate due to the interference between the data states of adjacent cells in the memory. Summary of the Invention

[0005] The object of the present invention is to provide a read-write reliability testing method for a non-volatile memory to solve the problems raised in the above background technology.

[0006] To achieve the above-mentioned object, the present invention provides the following technical solution: a method for testing the read and write reliability of a non-volatile memory, comprising:

[0007] Obtaining the operating environment parameters and operating intensity parameters of the target memory to obtain the environment information item and the intensity information item;

[0008] Dividing the environmental information item and the intensity information item into stages, into at least two environmental stage items and at least two intensity stage items, to obtain an environmental stage set and an intensity stage set;

[0009] Based on the combination result of the environment stage set and the strength stage set, a test environment set of the target memory is obtained, where the test environment set includes at least four test environment items formed by combining two environment stage items and two strength stage items.

[0010] Setting test information, including a test data volume, and testing the read and write performance of the target memory based on the test environment items to obtain a first test information set, the first test information set including at least first test information items corresponding to the four test environment items, to obtain the actual performance of the target memory under different working environments;

[0011] A maximum cut value is set based on the test information, the maximum cut value is a fixed value, and the test data is cut into pieces based on the maximum cut value to obtain a cut test set, wherein the cut test set includes at least one cut test item composed of different cut pieces;

[0012] Based on the test environment item, the writing and reading speeds of the cutting test item are obtained by an acquisition method, and then the writing speed and reading speed corresponding to the cutting test item are obtained to obtain the cutting writing set and the cutting reading set;

[0013] Based on the cutting write item and the cutting read item, the interference data caused by the capacitive coupling effect of the storage unit is obtained by comparing with the first test information item under the corresponding test environment item through a comparison method, thereby realizing the judgment of the capacitive coupling effect interference of adjacent units in the memory.

[0014] Furthermore, the operating environment parameters include temperature and voltage fluctuations, and the operating intensity parameters include read / write frequency and network supply. The method for obtaining the environmental information items and the intensity information items includes:

[0015] Setting an acquisition period, which is a fixed period, and obtaining the target memory's operating limit temperature information based on the acquisition period to obtain an extremely high temperature item and an extremely low temperature item, while also obtaining voltage limit information to obtain an extremely high voltage value and an extremely low voltage value, thereby obtaining an environmental information item;

[0016] Based on the acquisition deadline, read / write gap information of the target memory and network supply information matching the read / write gap information are obtained to obtain a read / write gap set and a network matching set. The read / write gap set includes at least two read / write gap items, and the network matching set includes at least two network matching items corresponding to the read / write gap items, thereby obtaining a strength information item.

[0017] Furthermore, the method for obtaining the environmental stage set includes:

[0018] Obtain the difference between the extremely high temperature item and the extremely low temperature item and the difference between the extremely high voltage value and the extremely low voltage value, obtain a temperature difference item and a voltage difference item, obtain intermediate value information of the temperature difference item and the voltage difference item, and obtain a temperature median item and a voltage median item;

[0019] Based on the combination of the extreme high temperature item, the extreme low temperature item, and the temperature median item, a first temperature range and a second temperature range are obtained; based on the combination of the extreme high voltage value, the extreme low voltage value, and the voltage median item, a first voltage range and a second voltage range are obtained;

[0020] A combination result of the first temperature range, the second temperature range and the first voltage range, the second voltage range is obtained to obtain a first combination set, a first partitioning interval is set to divide the first combination set to obtain at least two environmental stage items, and then an environmental stage set is obtained.

[0021] Furthermore, the method for obtaining the intensity stage set includes:

[0022] Get the average data of the read-write gap set and the network matching set to obtain the gap average item and the network average item;

[0023] Based on the gap average item and the network average item, a first gap range, a second gap range, a first network range and a second network range are obtained respectively;

[0024] The combination result of the first gap range, the second gap range, the first network range and the second network range is obtained to obtain a second combination set, and a second partitioning interval is set to divide the second combination set to obtain at least two intensity stage items, thereby obtaining an intensity stage set.

[0025] Furthermore, the method for setting the test information includes:

[0026] Based on the acquisition deadline, acquiring storage data volume information of the target storage to obtain a storage information set;

[0027] Based on the storage information set, the data maximum value of the storage data volume information is obtained, and the data maximum value is used as the test data volume to obtain the test information.

[0028] Furthermore, the method for obtaining the first test information set includes:

[0029] Based on the test environment set, sort the test environment items in the test environment set to obtain a sorted test set;

[0030] Based on the test information, the read and write performance tests of the target memory are performed in sequence according to the sorted test set to obtain a write rate set and a read rate set. The write rate set and the read rate set include at least four write rate items and read rate items corresponding to the test environment items. The write rate set and the read rate set are combined to obtain the first test information set.

[0031] Furthermore, the method for obtaining the cut test set includes:

[0032] Based on the fixed value corresponding to the maximum cutting value, at least one cutting control item is obtained according to the increasing order of integers, and the cutting control item is a fixed value;

[0033] Based on the cutting control items, the test data is cut into equal parts to obtain at least one cutting test item, and the cutting test items are combined to obtain a cutting test set.

[0034] Furthermore, the acquisition method includes:

[0035] S1: writing the cut test information separately according to the number of cuts in the cut test item to obtain a write speed set, and obtaining the read speed after the test information is completely written to obtain a read speed item;

[0036] S2: Obtain an average rate of the write speed set to obtain a write speed item, and obtain a write speed and a read speed corresponding to the cut test item based on the write speed item and the read speed item;

[0037] Based on the cut test set, steps S1-S2 are repeated to sequentially obtain the write speed and read speed corresponding to the cut test items, thereby obtaining a cut write set and a cut read set.

[0038] Furthermore, the comparison method includes:

[0039] Based on the first test information item, the test environment item is distinguished, and the write rate and the read rate corresponding to the test environment item in the first test information item are respectively obtained to obtain a first comparison item;

[0040] Based on the cut write set and the cut read set, respectively obtaining the write rate and the read rate corresponding to the test environment item in the cut write set and the cut read set to obtain a second comparison item;

[0041] Compare the write rate difference and the read rate difference between the first comparison item and the second comparison item, set a fluctuation threshold, and determine whether the write rate difference and the read rate difference exceed the fluctuation threshold, thereby obtaining the changes in write speed and read speed after the data is cut into different numbers under a fixed test environment, and obtaining the interference data caused by the capacitive coupling effect of the storage unit, thereby realizing the judgment of the capacitive coupling effect interference of adjacent units in the memory.

[0042] Compared with the prior art, the present invention has the following beneficial effects:

[0043] This read and write reliability testing method for non-volatile memory comprehensively considers the target memory's operating environment parameters, such as temperature and voltage fluctuations, and operating intensity parameters, such as read and write frequency and network supply. It obtains environmental information items and intensity information items and divides them into stages to combine and obtain a test environment set. Read and write performance tests are performed under different test environments to obtain a first test information set. This method can comprehensively and accurately reflect the performance of the memory under various actual working conditions, providing richer and more realistic data for memory performance evaluation and helping to more accurately understand the memory's working capabilities and potential problems.

[0044] At the same time, based on the test information, the maximum cutting value is set to cut the test data into several parts to obtain a cut test set, and the writing and reading speeds of the cut test items are obtained under different test environments. The data maximum value is used as the test data volume for testing, which can detect the performance of the target memory under the maximum transmission data. Through the read and write tests of the cut data, the performance changes of the memory under different data processing scales are further explored, and the performance limits of the memory are more deeply explored, providing strong support for optimizing memory performance and coping with big data processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 It is a schematic diagram of the overall process of the present invention;

[0046] Figure 2 Schematic diagram of the relationship between the environmental information item and the intensity information item of the present invention;

[0047] Figure 3 Obtaining a flow structure diagram for the environmental stage set of the present invention;

[0048] Figure 4 Schematic diagram of the relationship between the temperature median term and the voltage median term of the present invention;

[0049] Figure 5 A schematic diagram is obtained for the first combination set of the present invention. DETAILED DESCRIPTION

[0050] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0051] When testing the read and write performance of memory, traditional testing methods, especially those that rely on fixed data and static test environments, often fail to capture the true performance of the memory in real-world applications. Dynamic fluctuations in the memory operating environment are also a key consideration in real-world applications. The memory operating environment is not constant but fluctuates over time and with changes in application load. These environmental factors can significantly impact the read and write performance of the memory. For example, rising temperature can reduce the charge retention of memory cells, affecting read and write speeds and data reliability. Voltage fluctuations can cause the threshold voltage of memory cells to shift, affecting the accuracy of read and write operations. If the test environment is static and cannot simulate these dynamic fluctuations, the test results will not truly reflect the memory's performance under various operating conditions. Further complicating matters, capacitive coupling exists between memory cells, further complicating read and write performance testing. Due to the close physical proximity of memory cells, the data states of adjacent cells can interfere with each other. When a cell is written, its voltage change can affect the voltage state of adjacent cells through capacitive coupling, leading to read and write errors or performance degradation. Even if the test environment and test intensity are changed, this capacitive coupling effect still exists and may affect the test results. The present application provides a read and write reliability test method for non-volatile memory. By comprehensively considering the operating environment parameters of the target memory, such as temperature and voltage fluctuations and operating intensity parameters, such as read and write frequency and network supply, the environmental information items and intensity information items are obtained and divided into stages to obtain a test environment set. Read and write performance tests are performed under different test environments to obtain a first test information set. This method can comprehensively and accurately reflect the performance of the memory under various actual working conditions, provide richer and more realistic data for memory performance evaluation, and help to more accurately understand the working capabilities and potential problems of the memory, such as Figure 1 As shown, steps S100-S700 are included.

[0052] Step S100: Acquire the operating environment parameters and operating intensity parameters of the target memory to obtain an environment information item and an intensity information item.

[0053] It should be noted that if Figure 2As shown, the operating environment parameters include temperature and voltage fluctuations, the operating intensity parameters include read / write frequency and network supply, and the method for obtaining the environmental information items and the intensity information items includes: setting an acquisition period, the acquisition period is a fixed period, and the set acquisition period is 10 days. Based on the acquisition period, the operating limit temperature information of the target memory is obtained. During the acquisition period, the operating temperature of the target memory will have an extremely high value and an extremely low value, thereby obtaining an extremely high temperature item and an extremely low temperature item. At the same time, the voltage limit information is obtained. During the acquisition period, the voltage suffered by the target memory will have an extremely high value and an extremely low value during the fluctuation process, thereby obtaining an extremely high voltage value and an extremely low voltage value, thereby obtaining the environmental information item; based on the acquisition period, the read / write gap information of the target memory and the network supply information matching the read / write gap information are obtained to obtain a read / write gap set and a network matching set. The read / write gap set includes at least two read / write gap items, and the network matching set includes at least two network matching items corresponding to the read / write gap item, thereby obtaining the intensity information item.

[0054] In the specific implementation process, it is now necessary to obtain the operating environment parameters and operating intensity parameters of a certain memory A. According to the set acquisition period, the operating time, operating temperature, voltage fluctuation, read / write gap, and network supply information of the memory A are obtained as shown in Table 1:

[0055] Table 1

[0056] date Working hours / h Working temperature / ℃ Voltage fluctuation / V Read / write gap / min Network supply / Mbps Day 1 18.5 32.1 218.7 45 872 the next day 22.0 35.6 225.3 38 756 Day 3 15.2 28.3 213.9 62 932 Day 4 19.8 38.2 201.5 55 689 Day 5 23.5 33.7 235.8 41 1045 Day 6 16.7 31.5 219.2 89 598 Day 7 20.3 36.9 227.6 34 913 Day 8 12.0 27.4 208.3 73 764 Day 9 21.6 34.8 222.1 48 831 Day 10 17.9 29.6 216.7 67 967

[0057] According to Table 1, the extremely high temperature item and the extremely low temperature item of memory A are 38.2°C and 27.4°C, respectively. The extremely high voltage value and the extremely low voltage value of memory A are 235.8V and 201.5V, respectively. Thus, the environmental information item is obtained. At the same time, the read and write gap set of memory A is obtained as 45, 38, 62, 55, 41, 89, 34, 73, 48, and 67. The network matching set is 872, 756, 932, 689, 1045, 598, 913, 764, 831, and 967. Thus, the strength information item is obtained.

[0058] Step S200: Divide the environmental information items and the intensity information items into stages.

[0059] It should be noted that the environment information items and the intensity information items are divided into at least two environment stage items and at least two intensity stage items to obtain an environment stage set and an intensity stage set.

[0060] It should be noted that if Figure 3As shown, the method for obtaining the environmental stage set includes: obtaining the difference between the extremely high temperature item and the extremely low temperature item and the difference between the extremely high voltage value and the extremely low voltage value to obtain the temperature difference item and the voltage difference item, obtaining the intermediate value information of the temperature difference item and the voltage difference item to obtain the temperature median item and the voltage median item; based on the combination result of the extremely high temperature item, the extremely low temperature item and the temperature median item, obtaining the first temperature range and the second temperature range, based on the combination result of the extremely high voltage value, the extremely low voltage value and the voltage median item, obtaining the first voltage range and the second voltage range; obtaining the combination result of the first temperature range, the second temperature range and the first voltage range, the second voltage range to obtain a first combination set, setting a first division interval to divide the first combination set to obtain at least two environmental stage items, and then obtaining the environmental stage set.

[0061] In the specific implementation process, Figure 4-Figure 5As shown, the operating environment parameters and operating intensity parameters of a certain memory B are now obtained, where the extremely high temperature item and the extremely low temperature item are 38.2℃ and 27.4℃ respectively, and the extremely high voltage value and the extremely low voltage value are 235.8V and 201.5V respectively. At this time, the difference between the extremely high temperature item and the extremely low temperature item and the difference between the extremely high voltage value and the extremely low voltage value are obtained, which are 10.8℃ and 34.3V respectively. The temperature difference item and the voltage difference item are obtained, and the intermediate value information of the temperature difference item and the voltage difference item is obtained to obtain the temperature median item and the voltage median item. , respectively 5.4 ℃ and 17.15V, based on the combination of the temperature extreme high item, the temperature extreme low item and the temperature median item, the first temperature range and the second temperature range are obtained. At this time, the first temperature range and the second temperature range are 27.4 ℃-32.8 ℃ and 32.8 ℃-38.2 ℃ respectively. Based on the combination of the voltage extreme high value, the voltage extreme low value and the voltage median item, the first voltage range and the second voltage range are obtained. The first voltage range and the second voltage range are 201.5V-218.65V and 218.65V-235 respectively. .8V; obtain the combination results of the first temperature range, the second temperature range and the first voltage range, and obtain the first combination set. At this time, the first combination set is: (27.4℃-32.8℃, 201.5V-218.65V), (27.4℃-32.8℃, 218.65V-235.8V), (32.8℃-38.2℃, 201.5V-218.65V), (32.8℃-38.2℃, 218.65V-235.8V), set the first division interval to divide the first combination set The first division interval is set to 3:1. The division results are: (27.4℃-32.8℃, 201.5V-218.65V), (27.4℃-32.8℃, 218.65V-235.8V), (32.8℃-38.2℃, 201.5V-218.65V) as the first division result, and (32.8℃-38.2℃, 218.65V-235.8V) as the second division result. Then, two environmental stage items are obtained, which are set as low-level environment and high-level environment respectively, and the environmental stage set is obtained.

[0062] It should be noted that the method for obtaining the intensity stage set includes: obtaining the average value data of the read-write gap set and the network matching set to obtain the gap average item and the network average item; dividing based on the gap average item and the network average item respectively to obtain the first gap range, the second gap range and the first network range and the second network range; obtaining the combination result of the first gap range, the second gap range and the first network range, the second network range to obtain the second combination set, setting the second division interval to divide the second combination set to obtain at least two intensity stage items, and then obtaining the intensity stage set.

[0063] During the specific implementation process, the operating intensity parameters of a certain memory B are obtained, wherein the read and write gap sets of the memory B are 45, 38, 62, 55, 41, 89, 34, 73, 48, and 67. At this time, the gap average item is 55.2 min, and the network matching set obtained is 872, 756, 932, 689, 1045, 598, 913, 764, 831, and 967. At this time, the network average item is 836.7 Mbps, and then the network average item is obtained. Based on the gap average item, the first gap range and the second gap range are obtained. At this time, the first gap range is <55.2 min, and the second gap range is >55.2 min. Based on the network average item, the first network range and the second network range are obtained. At this time, the first network range is <836.7 Mbps, and the second network range is >836.7 Mbps. The first gap range, The combination result of the second gap range with the first network range and the second network range is to obtain the second combination set, which is (<55.2min, <836.7Mbps), (<55.2min, >836.7Mbps), (>55.2min, <836.7Mbps), (>55.2min, >836.7Mbps). The second partition interval is set to divide the second combination set. The second partition interval is 3:1. At this time, the partition results are: (<55.2min, <836.7Mbps), (<55.2min, >836.7Mbps), (>55.2min, <836.7Mbps) is the third partition result, and (>55.2min, >836.7Mbps) is the fourth partition result. Then, two intensity stage items are obtained, which are set as low intensity and high intensity respectively, to obtain the intensity stage set.

[0064] Step S300: Based on the combination result of the environment stage set and the strength stage set, a test environment set of the target memory is obtained.

[0065] It should be noted that the test environment set includes at least four test environment items composed of two environment stage items and two strength stage items. When there are two environment stage items and two strength stage items, there are four test environment items.

[0066] Step S400: setting test information, including the test data volume, and performing a read and write performance test on the target memory based on the test environment items.

[0067] It should be noted that after the test, a first test information set is obtained, and the first test information set includes at least first test information items corresponding to four test environment items, so as to obtain the actual performance of the target memory under different working environments. The test information setting method includes: based on the acquisition period, the acquisition period is 10 days, and the storage data volume information of the target memory is obtained to obtain a storage information set; based on the storage information set, the data maximum value of the storage data volume information is obtained, and the data maximum value is used as the test data volume, and then the test information is obtained. When the data maximum value is used as the test data volume, the test result of the target memory under the maximum transmission data can be detected, and the performance of the target memory can be better detected.

[0068] It should be noted that the method for obtaining the first test information set includes: based on the test environment set, sorting the test environment items in the test environment set to obtain a sorted test set; based on the test information, performing read and write performance tests on the target memory in sequence according to the sorted test set to obtain a write rate set and a read rate set, the write rate set and the read rate set include at least four write rate items and read rate items corresponding to the test environment items, and the write rate set and the read rate set are combined to obtain the first test information set.

[0069] In a specific implementation process, it is now necessary to perform a read and write performance test on a certain storage C, and the obtained test environment set is: (low environment, low intensity), (low environment, high intensity), (high environment, low intensity), (high environment, high intensity), and (high environment, high intensity). At this time, these test environment items are sorted respectively, and the sorting results are sequence numbers 1, 2, 3, and 4 respectively. The read and write performance tests are then performed on the target storage in sequence. The test information is 500MB. According to the set test environment set, the test environment is shown in Table 2:

[0070] Table 2

[0071] Test environment temperature Voltage Read-write gap Network supply Write rate Read rate No. 1 28℃ 205V 40min 800Mbps 245MB / s 320MB / s No. 2 28℃ 205V 60min 850Mbps 248MB / s 325MB / s No. 3 35℃ 220V 40min 800Mbps 240MB / s 315MB / s No. 4 35℃ 220V 60min 850Mbps 242MB / s 318MB / s

[0072] Then, a first test information set is obtained.

[0073] Step S500: setting a maximum cutting value based on test information, and cutting the test data into a number of copies based on the maximum cutting value.

[0074] It should be noted that the maximum cutting value is a fixed value, and a cutting test set is obtained after cutting. The cutting test set includes at least one cutting test item composed of different cutting numbers. The method for obtaining the cutting test set includes: based on the fixed value corresponding to the maximum cutting value, according to the increasing order of integers, obtaining at least one cutting control item, and the cutting control item is a fixed value; based on the cutting control item, the test data is cut into equal parts to obtain at least one cutting test item, and the cutting test items are combined to obtain the cutting test set.

[0075] Specifically, when the fixed value corresponding to the maximum cutting value is 3, three cutting control items will be obtained according to the ascending order of integers, namely 1, 2, and 3. When the fixed value corresponding to the maximum cutting value is 2, two cutting control items will be obtained according to the ascending order of integers, namely 1 and 2. At this time, according to the cutting control items, the test data is divided into equal parts to obtain at least one cutting test item, and the cutting test items are combined to obtain a cutting test set.

[0076] Step S600: Based on the test environment item, the writing and reading speeds of the cutting test item are obtained by an obtaining method.

[0077] It should be noted that the write speed and read speed corresponding to the cutting test item are obtained, and the cutting write set and the cutting read set are obtained. The acquisition method includes: S1: writing the cut test information separately according to the number of cuts in the cutting test item to obtain the write speed set, and obtaining the read speed after the test information is completely written to obtain the read speed item; S2: obtaining the average rate of the write speed set to obtain the write speed item, and based on the write speed item and the read speed item, obtain the write speed and read speed corresponding to the cutting test item; based on the cutting test set, repeat steps S1-S2 to obtain the write speed and read speed corresponding to the cutting test item in turn to obtain the cutting write set and the cutting read set.

[0078] In a specific implementation process, the maximum cutting value is set to 1. At this time, there is only one cutting control item, and the cutting test item is obtained, which is 1. At this time, a read and write performance test needs to be performed on a certain storage D. The test information is 500MB. According to the set test environment set, the test environment items are sorted, and the sorting results are sequence numbers 1, 2, 3, and 4. According to the set cutting test item, the test information is cut into the first and second parts, both of which are 250MB. The first and second parts are written separately to obtain a write speed set, and the read speed after the test information is completely written is obtained to obtain a read speed item, as shown in Table 3:

[0079] Table 3

[0080] Test environment temperature Voltage Read-write gap Network supply Part 1 Write Rate Part 2 Write Rate Read rate No. 1 28℃ 205V 40min 800Mbps 245MB / s 250MB / s 325MB / s No. 2 28℃ 205V 60min 850Mbps 248MB / s 256MB / s 332MB / s No. 3 35℃ 220V 40min 800Mbps 240MB / s 246MB / s 321MB / s No. 4 35℃ 220V 60min 850Mbps 242MB / s 240MB / s 320MB / s

[0081] As shown in Table 3, the average rates of the write speed set are 247.5MB / s, 252MB / s, 243MB / s, and 241MB / s, respectively, and the write speed item is obtained.

[0082] Step S700: Compare with the first test information item under the corresponding test environment item through a comparison method.

[0083] It should be noted that the interference data caused by the capacitive coupling effect of the storage unit is obtained, and the capacitive coupling effect interference of adjacent units in the memory is judged. The comparison method includes: based on the first test information item, the test environment item is distinguished, and the write rate and read rate corresponding to the test environment item in the first test information item are respectively obtained to obtain a first comparison item; based on the cut write set and the cut read set, the write rate and read rate corresponding to the test environment item in the cut write set and the cut read set are respectively obtained to obtain a second comparison item; the write rate difference and the read rate difference between the first comparison item and the second comparison item are compared, and a fluctuation threshold is set, the fluctuation threshold is ±5%, and it is judged whether the write rate difference and the read rate difference exceed the fluctuation threshold, and then the changes in the write speed and read speed after the data is cut into different numbers under a fixed test environment are obtained, and the interference data caused by the capacitive coupling effect of the storage unit is obtained, and then the capacitive coupling effect interference of adjacent units in the memory is judged.

[0084] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is limited by the accompanying embodiments and their equivalents.

Claims

1. A method for testing the read and write reliability of a non-volatile memory, comprising: Obtaining the operating environment parameters and operating intensity parameters of the target memory to obtain the environment information item and the intensity information item; Its characteristics are: Dividing the environmental information item and the intensity information item into stages, into at least two environmental stage items and at least two intensity stage items, to obtain an environmental stage set and an intensity stage set; Based on the combination result of the environment stage set and the strength stage set, a test environment set of the target memory is obtained, where the test environment set includes at least four test environment items formed by combining two environment stage items and two strength stage items. Setting test information, including a test data volume, and testing the read and write performance of the target memory based on the test environment items to obtain a first test information set, the first test information set including at least first test information items corresponding to the four test environment items, to obtain the actual performance of the target memory under different working environments; A maximum cut value is set based on the test information, the maximum cut value is a fixed value, and the test data is cut into pieces based on the maximum cut value to obtain a cut test set, wherein the cut test set includes at least one cut test item composed of different cut pieces; Based on the test environment item, the writing and reading speeds of the cutting test item are obtained by an acquisition method, and then the writing speed and reading speed corresponding to the cutting test item are obtained to obtain the cutting writing set and the cutting reading set; Based on the cutting write item and the cutting read item, the interference data caused by the capacitive coupling effect of the storage unit is obtained by comparing with the first test information item under the corresponding test environment item through a comparison method, thereby realizing the judgment of the capacitive coupling effect interference of adjacent units in the memory.

2. The method for testing read and write reliability of a non-volatile memory according to claim 1, wherein: The operating environment parameters include temperature and voltage fluctuations, and the operating intensity parameters include read / write frequency and network supply. The method for obtaining the environmental information item and the intensity information item includes: Setting an acquisition period, which is a fixed period, and obtaining the target memory's operating limit temperature information based on the acquisition period to obtain an extremely high temperature item and an extremely low temperature item, while also obtaining voltage limit information to obtain an extremely high voltage value and an extremely low voltage value, thereby obtaining an environmental information item; Based on the acquisition deadline, read / write gap information of the target memory and network supply information matching the read / write gap information are obtained to obtain a read / write gap set and a network matching set. The read / write gap set includes at least two read / write gap items, and the network matching set includes at least two network matching items corresponding to the read / write gap items, thereby obtaining a strength information item.

3. The method for testing read and write reliability of a non-volatile memory according to claim 2, wherein: The method for obtaining the environment stage set includes: Obtain the difference between the extremely high temperature item and the extremely low temperature item and the difference between the extremely high voltage value and the extremely low voltage value, obtain a temperature difference item and a voltage difference item, obtain intermediate value information of the temperature difference item and the voltage difference item, and obtain a temperature median item and a voltage median item; Based on the combination of the extreme high temperature item, the extreme low temperature item, and the temperature median item, a first temperature range and a second temperature range are obtained; based on the combination of the extreme high voltage value, the extreme low voltage value, and the voltage median item, a first voltage range and a second voltage range are obtained; A combination result of the first temperature range, the second temperature range and the first voltage range, the second voltage range is obtained to obtain a first combination set, a first partitioning interval is set to divide the first combination set to obtain at least two environmental stage items, and then an environmental stage set is obtained.

4. The method for testing read and write reliability of a non-volatile memory according to claim 2, wherein: The method for obtaining the intensity stage set includes: Get the average data of the read-write gap set and the network matching set to obtain the gap average item and the network average item; Based on the gap average item and the network average item, a first gap range, a second gap range, a first network range and a second network range are obtained respectively; The combination result of the first gap range, the second gap range, the first network range and the second network range is obtained to obtain a second combination set, and a second partitioning interval is set to divide the second combination set to obtain at least two intensity stage items, thereby obtaining an intensity stage set.

5. The method for testing read and write reliability of a non-volatile memory according to claim 2, wherein: The test information setting method includes: Based on the acquisition deadline, acquiring storage data volume information of the target storage to obtain a storage information set; Based on the storage information set, the data maximum value of the storage data volume information is obtained, and the data maximum value is used as the test data volume to obtain the test information.

6. The method for testing read and write reliability of a non-volatile memory according to claim 1, wherein: The method for obtaining the first test information set includes: Based on the test environment set, sort the test environment items in the test environment set to obtain a sorted test set; Based on the test information, the read and write performance tests of the target memory are performed in sequence according to the sorted test set to obtain a write rate set and a read rate set. The write rate set and the read rate set include at least four write rate items and read rate items corresponding to the test environment items. The write rate set and the read rate set are combined to obtain the first test information set.

7. The method for testing read and write reliability of a non-volatile memory according to claim 1, wherein: The method for obtaining the cutting test set includes: Based on the fixed value corresponding to the maximum cutting value, at least one cutting control item is obtained according to the increasing order of integers, and the cutting control item is a fixed value; Based on the cutting control items, the test data is cut into equal parts to obtain at least one cutting test item, and the cutting test items are combined to obtain a cutting test set.

8. The method for testing read and write reliability of a non-volatile memory according to claim 1, wherein: The acquisition method includes: S1: writing the cut test information separately according to the number of cuts in the cut test item to obtain a write speed set, and obtaining the read speed after the test information is completely written to obtain a read speed item; S2: Obtain an average rate of the write speed set to obtain a write speed item, and obtain a write speed and a read speed corresponding to the cut test item based on the write speed item and the read speed item; Based on the cut test set, steps S1-S2 are repeated to sequentially obtain the write speed and read speed corresponding to the cut test items, thereby obtaining a cut write set and a cut read set.

9. The method for testing read and write reliability of a non-volatile memory according to claim 1, wherein: The comparison method includes: Based on the first test information item, the test environment item is distinguished, and the write rate and the read rate corresponding to the test environment item in the first test information item are respectively obtained to obtain a first comparison item; Based on the cut write set and the cut read set, respectively obtaining the write rate and the read rate corresponding to the test environment item in the cut write set and the cut read set to obtain a second comparison item; Compare the write rate difference and the read rate difference between the first comparison item and the second comparison item, set a fluctuation threshold, and determine whether the write rate difference and the read rate difference exceed the fluctuation threshold, thereby obtaining the changes in write speed and read speed after the data is cut into different numbers under a fixed test environment, and obtaining the interference data caused by the capacitive coupling effect of the storage unit, thereby realizing the judgment of the capacitive coupling effect interference of adjacent units in the memory.

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