Substrate notch level determination method, device, electronic device and storage medium

Abstract

The present invention relates to the field of substrate classification technology, and more particularly to a method, device, electronic device, and storage medium for determining substrate notch grades. The method first obtains the surface width of the substrate notch; then, based on the surface width, the surface grade is determined as P or F; when the surface grade is P, the substrate is subjected to surface symmetry and edge collapse determinations, and the substrate grade is determined based on the results of the surface symmetry and edge collapse determinations; finally, when the surface grade is F, the substrate is subjected to edge collapse determination. When the edge collapse determination result is below the edge collapse grade threshold, the substrate is determined as a downgraded substrate; otherwise, the substrate is reworked. The method can more accurately classify the processing grade of the notch, adapting to the needs of subsequent different processing, and improving the yield rate and processing efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of substrate classification, and in particular to a method, device, electronic device and storage medium for determining a substrate notch level. Background Art

[0002] As a third-generation semiconductor, silicon carbide (SiC) enjoys widespread applications and robust market demand. With rising market demand, technological advancement and cost reduction are key areas of future innovation. Increasing substrate size is a key factor in technological advancement and cost reduction. Wafers of 8 inches and larger are currently the primary focus of development. To conserve effective manufacturing area, the industry has introduced notches (notches) on 8-inch and larger substrates as identifiers to identify substrate type, doping, and crystal orientation during manufacturing and processing. In large wafer sizes, notches effectively conserve manufacturing space and are more compatible with modern automated equipment. The quality of the notch ensures the yield, accuracy, and efficiency of the wafer processing process.

[0003] As customers' demands for substrate quality continue to rise, the processing effect at the notch position is now included in the classification of substrates. Currently, the human eye is the most commonly used method for determining the level of processing quality, using a halogen spotlight to determine the level of processing quality. Due to the variability of human visual recognition, it can only broadly define the range and estimate the completion of the grading, but cannot fully distinguish substrate grades. This can easily lead to misjudgment or misclassification of substrate grades, causing accuracy, yield, and efficiency issues in downstream processing, leading to increased complaints. Furthermore, the inability to accurately grasp the processing results is not conducive to technological advancement and quality control. Therefore, it is crucial to find a method for comprehensive judgment.

[0004] Based on this, it is necessary to develop and design a method for determining the substrate notch level. Summary of the Invention

[0005] The embodiments of the present invention provide a method, device, electronic device and storage medium for determining the notch grade of a substrate, which are used to solve the problem that the notch classification method in the prior art cannot accurately reflect the processing accuracy of the notch.

[0006] In a first aspect, an embodiment of the present invention provides a method for determining a substrate notch level, comprising:

[0007] Get the width of the substrate notch;

[0008] The surface width is determined as P or F according to the surface width;

[0009] When the surface width grade is P grade, the substrate is subjected to surface width symmetry determination and edge collapse determination, and the grade of the substrate is determined according to the results of the surface width symmetry determination and the edge collapse determination;

[0010] When the surface grade is F, the substrate is judged for edge chipping. When the edge chipping judgment result is lower than the edge chipping grade threshold, the substrate is determined to be a downgraded substrate; otherwise, the substrate is reworked.

[0011] In one possible implementation, determining the surface symmetry of the substrate includes:

[0012] Obtaining a first surface width, a second surface width, a third surface width, and a fourth surface width of the substrate, wherein the first surface width is determined based on the left half of the first surface of the substrate notch, the second surface width is determined based on the right half of the first surface of the substrate notch, the third surface width is determined based on the left half of the second surface of the substrate notch, and the fourth surface width is determined based on the right half of the second surface of the substrate notch;

[0013] determining a first symmetry difference based on the first width and the second width;

[0014] determining a symmetry difference of the second surface according to the third surface width and the fourth surface width;

[0015] Determining a total symmetry difference based on the first width, the second width, the third width, and the fourth width;

[0016] The plane symmetry level is determined according to the first plane symmetry difference, the second plane symmetry difference, and the overall symmetry difference.

[0017] In one possible implementation, the first-plane symmetry difference and the second-plane symmetry difference are respectively determined according to a first formula, wherein the first formula is:

[0018]

[0019] Where, To account for symmetry differences, To take the absolute value function, To obtain the maximum value function, is the average width of the left half of the substrate surface, is the average width of the right half of the substrate surface;

[0020] Determining the total symmetry difference according to the first width, the second width, the third width, and the fourth width includes:

[0021] Selecting the largest width from among the first width, the second width, the third width, and the fourth width as the third width;

[0022] The opposite surface of the surface where the third width is located is used as the target surface;

[0023] Taking the minimum value among the multiple widths corresponding to the target surface as the fourth width;

[0024] The total symmetry difference is determined according to the third width, the fourth width, and a second formula, wherein the second formula is:

[0025]

[0026] Where, is the total symmetry difference, is the third width, The fourth width.

[0027] In one possible implementation, determining the plane symmetry level according to the first plane symmetry difference, the second plane symmetry difference, and the total symmetry difference includes:

[0028] Determining a first plane width symmetry grade, a second plane width symmetry grade, and a total symmetry grade according to distribution intervals of the first plane symmetry difference, the second plane symmetry difference, and the total symmetry difference;

[0029] If the first surface width symmetry level, the second surface width symmetry level, and the total symmetry level are different, a level other than the highest level and the lowest level is used as a target level, and a level next to the target level is used as the surface width symmetry level;

[0030] Otherwise, the first surface width symmetry level, the second surface width symmetry level, and the overall symmetry level are used as the surface width symmetry level.

[0031] In one possible implementation, the step of determining whether the substrate has edge collapse includes:

[0032] Get the number of chipping edges, maximum chipping edge depth and maximum chipping edge length;

[0033] If the edge chipping number exceeds an edge chipping threshold or the maximum edge chipping depth exceeds a depth threshold, the substrate is determined to be a degraded substrate;

[0034] Otherwise, perform the following steps:

[0035] Determine the size grade according to the size range of the maximum chipping length;

[0036] Determining a depth level according to a depth range where the maximum edge chipping depth is located;

[0037] If the depth level is lower than the size level, the next level below the size level is used as the chipping level;

[0038] Otherwise, the limit of chipping quantity is determined according to the size grade;

[0039] If the chipping amount exceeds the chipping amount limit, the next level of the size level is used as the chipping level;

[0040] Otherwise, the size grade is regarded as the chipping grade.

[0041] In a possible implementation, determining the grade of the substrate according to the results of the surface width symmetry determination and the results of the edge chipping determination includes:

[0042] The lowest level among the results of the surface symmetry determination and the results of the edge chipping determination is used as the grade of the substrate.

[0043] In a possible implementation, the surface width symmetry determination result and the edge chipping determination result each include at least three levels;

[0044] For substrates with a surface area grade of P, after determining the grade of the substrate, the following are also included:

[0045] If the grade of the substrate is the lowest grade, the substrate is determined to be a degraded substrate;

[0046] If the grade of the substrate is the next lowest grade, the substrate is reworked.

[0047] In a second aspect, an embodiment of the present invention provides a substrate notch level determination device, configured to implement the substrate notch level determination method described in the first aspect or any possible implementation of the first aspect, the substrate notch level determination device comprising:

[0048] A surface width acquisition module is used to obtain the surface width of the substrate notch;

[0049] A width grading module, configured to grade the width into P or F according to the width of the width;

[0050] The first grading module is used to perform surface width symmetry determination and edge collapse determination on the substrate when the surface width grade is P grade, and determine the grade of the substrate according to the results of the surface width symmetry determination and the results of the edge collapse determination;

[0051] as well as,

[0052] The second grading module is used to determine the edge collapse of the substrate when the surface grade is F. When the edge collapse determination result is lower than the edge collapse grade threshold, the substrate is determined to be a degraded substrate; otherwise, the substrate is reworked.

[0053] In a third aspect, an embodiment of the present invention provides an electronic device comprising a memory and a processor, wherein the memory stores a computer program that can be run on the processor, and when the processor executes the computer program, it implements the steps of the method described in the first aspect or any possible implementation of the first aspect.

[0054] In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, it implements the steps of the method described in the first aspect or any possible implementation of the first aspect.

[0055] Compared with the prior art, the embodiments of the present invention have the following beneficial effects:

[0056] The present invention discloses a method for determining the grade of a substrate notch. The method first obtains the width of the substrate notch; then, based on the width, the notch grade is determined as either P or F; if the notch grade is P, the substrate is subjected to a surface symmetry assessment and an edge collapse assessment, and the substrate grade is determined based on the results of the surface symmetry and edge collapse assessments; finally, if the notch grade is F, the substrate is subjected to an edge collapse assessment. If the edge collapse assessment result is below the edge collapse grade threshold, the substrate is determined to be downgraded; otherwise, the substrate is reworked. The method can accurately classify the processing grade of the notch, adapting to the needs of different subsequent processing, and improving the yield rate and processing efficiency.

[0057] The grade determination method of the present invention can reduce subsequent process matching failures caused by notch defects, such as lithography alignment deviation and uneven film substrate. It can also reduce the risk of edge collapse defects expanding in subsequent processes through precise screening, identify high-risk substrates in advance, and optimize rework strategies through grade processing to avoid material loss caused by excessive rework.

[0058] The method of the present invention can achieve quality traceability optimization: through quantitative grading, a digital quality file is established to facilitate defect tracing analysis; the adaptability of substrate equipment graded by the method of the present invention is enhanced: the grading results can automatically match processing equipment with different precision requirements; the multi-parameter judgment framework of surface width + symmetry + edge collapse is compatible with AI algorithm upgrades; and through graded pre-judgment, online detection time is reduced and work efficiency is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0060] Figure 1 is a flow chart of a method for determining a substrate notch level provided in an embodiment of the present invention;

[0061] Figure 2 This is a functional block diagram of a substrate notch level determination device provided in an embodiment of the present invention;

[0062] Figure 3 This is a functional block diagram of an electronic device provided by an embodiment of the present invention;

[0063] Figure 4 is a notch level determination flow chart provided by an embodiment of the present invention;

[0064] Figure 5 This is a currently used flow chart for determining notch levels;

[0065] Figure 6 Schematic diagram of a substrate and a notch provided in an embodiment of the present invention;

[0066] Figure 7 It is a schematic diagram of the width of the surface provided by the embodiment of the present invention. DETAILED DESCRIPTION

[0067] In the following description, specific details such as particular system structures and techniques are provided for purposes of illustration, not limitation, to facilitate a thorough understanding of the embodiments of the present invention. However, it will be apparent to those skilled in the art that the present invention may be practiced in alternative embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.

[0068] In order to make the objectives, technical solutions and advantages of the present invention more clear, the following will be described through specific implementation methods in conjunction with the accompanying drawings.

[0069] The following is a detailed description of an embodiment of the present invention. This example is implemented based on the technical solution of the present invention, and provides a detailed implementation method and specific operation process, but the protection scope of the present invention is not limited to the following embodiment.

[0070] Figure 1 Flowchart of a method for determining a substrate notch level provided in an embodiment of the present invention.

[0071] like Figure 1 As shown, it shows a flowchart of the implementation method of the substrate notch level determination method provided by an embodiment of the present invention, which is detailed as follows:

[0072] In step 101, the width of the substrate notch is obtained.

[0073] In step 102, the width of the surface is determined to be P or F according to the width of the surface.

[0074] For example, Figure 6 A substrate is shown, in which a notch 402 is provided on the substrate 401 body.

[0075] As mentioned above, customers are increasingly demanding higher quality for substrates and higher quality for notch processing. Traditional visual assessment of surface area and edge chipping using a halogen spotlight is prone to misjudgment or inaccurate judgment. Therefore, it is crucial to develop a comprehensive method for determining grade.

[0076] The embodiment of the present invention provides a method for comprehensively determining the notch grade of a silicon carbide substrate. The method first determines the grade by the surface width, and then performs a comprehensive determination by surface width difference and edge collapse. The final result is the silicon carbide notch grade.

[0077] The grading of surface width difference includes the symmetry judgment of surface width difference on the same surface and the symmetry judgment of surface width difference on different surfaces. The grading of chipping edge includes the notch cutting and grinding state grade judgment based on the maximum size and number of chipping edges.

[0078] This grading method avoids the errors of human eye judgment and the incompleteness of rough grading, and can accurately judge the processing quality of substrate notch. Clear grading helps improve processing quality and reduce the complaint rate due to notch processing quality. At the same time, the notch processing process can be optimized according to parameters to improve substrate processing technology.

[0079] like Figure 4 As shown, the figure shows a flowchart of substrate notch level determination provided by an embodiment of the present invention.

[0080] As can be seen in the figure, the present invention first determines the grade based on the width of the substrate, dividing it into two levels: P and F. The P-grade notch is then further assessed for symmetry and edge chipping to determine its grade. The F-grade notch only requires edge chipping assessment. When the edge chipping grade reaches the lowest level, the substrate is downgraded, and notches of other grades undergo rework.

[0081] As an example, the following table 1 shows a criterion for determining the width grade:

[0082]

[0083] Table 1

[0084] As can be seen from the above table, in terms of surface width level determination, the surface width of 150-300μm is P grade, and less than 150μm or greater than 300μm is F grade.

[0085] P-grade substrates can be used to determine the surface symmetry and edge collapse level;

[0086] For grade F substrates, according to the edge chipping grade determination method, when the edge chipping grade is NG, it is directly downgraded to NG; when the edge chipping grade is P+, A, B, or C, it is reworked.

[0087] Regarding symmetry level determination, the embodiments of the present invention are discussed in detail from the following steps.

[0088] In step 103, when the surface width grade is P grade, the surface width symmetry and edge chipping are determined for the substrate, and the grade of the substrate is determined based on the results of the surface width symmetry and edge chipping determinations.

[0089] In some embodiments, determining the surface symmetry of the substrate includes:

[0090] Obtaining a first surface width, a second surface width, a third surface width, and a fourth surface width of the substrate, wherein the first surface width is determined based on the left half of the first surface of the substrate notch, the second surface width is determined based on the right half of the first surface of the substrate notch, the third surface width is determined based on the left half of the second surface of the substrate notch, and the fourth surface width is determined based on the right half of the second surface of the substrate notch;

[0091] determining a first-plane symmetry difference based on the first-plane width and the second-plane width;

[0092] determining a symmetry difference of the second surface according to the third surface width and the fourth surface width;

[0093] Determining a total symmetry difference based on the first width, the second width, the third width, and the fourth width;

[0094] The plane symmetry level is determined according to the first plane symmetry difference, the second plane symmetry difference, and the overall symmetry difference.

[0095] In some embodiments, the first face symmetry difference and the second face symmetry difference are determined according to a first formula, wherein the first formula is:

[0096]

[0097] Where, To account for symmetry differences, To take the absolute value function, To obtain the maximum value function, is the average width of the left half of the substrate surface, is the average width of the right half of the substrate surface;

[0098] Determining the total symmetry difference according to the first width, the second width, the third width, and the fourth width includes:

[0099] Selecting the largest width from among the first width, the second width, the third width, and the fourth width as the third width;

[0100] The opposite surface of the surface where the third width is located is used as the target surface;

[0101] Taking the minimum value among the multiple widths corresponding to the target surface as the fourth width;

[0102] The total symmetry difference is determined according to the third width, the fourth width, and a second formula, wherein the second formula is:

[0103]

[0104] Where, is the total symmetry difference, is the third width, The fourth width.

[0105] In some embodiments, determining the plane symmetry level according to the first plane symmetry difference, the second plane symmetry difference, and the total symmetry difference includes:

[0106] Determining a first plane width symmetry grade, a second plane width symmetry grade, and a total symmetry grade according to distribution intervals of the first plane symmetry difference, the second plane symmetry difference, and the total symmetry difference;

[0107] If the first surface width symmetry level, the second surface width symmetry level, and the total symmetry level are different, a level other than the highest level and the lowest level is used as a target level, and a level next to the target level is used as the surface width symmetry level;

[0108] Otherwise, the first surface width symmetry level, the second surface width symmetry level, and the overall symmetry level are used as the surface width symmetry level.

[0109] In some embodiments, determining the grade of the substrate according to the results of the surface symmetry determination and the edge chipping determination includes:

[0110] The lowest level among the results of the surface symmetry determination and the results of the edge chipping determination is used as the grade of the substrate.

[0111] In some embodiments, the surface width symmetry determination result and the edge chipping determination result each include at least three levels;

[0112] For substrates with a surface area grade of P, after determining the grade of the substrate, the following are also included:

[0113] If the grade of the substrate is the lowest grade, the substrate is determined to be a degraded substrate;

[0114] If the grade of the substrate is the next lowest grade, the substrate is reworked.

[0115] For example, in terms of surface width symmetry judgment, as mentioned above, the surface width level needs to be judged as P level. In terms of surface width symmetry judgment, the present invention respectively integrates the surface width symmetry differences of the same surface and the surface width symmetry differences of different surfaces. The two surfaces of the substrate are divided into C surface and SI surface according to the directionality of the wafer raw material. The surface width detection is performed on the C surface of the substrate, and the average value of the left surface width measured at the notch position is recorded as C1, and the average value of the right surface width measured at the notch position is recorded as C2; the test is performed on the SI surface of the substrate, and the average value of the left surface width measured at the notch position is recorded as SI1, and the average value of the right surface width measured at the notch position is recorded as SI2.

[0116] Figure 7 A scene diagram for determining the surface width is shown. In the diagram, the notch is divided into two parts, and the surface width 501 of the left part and the surface width 502 of the right part are marked and recorded respectively. For example, the diagram shows the C surface, the surface width 501 of the left part is C1, and the surface width 502 of the right part is C2.

[0117] (1) Calculation method of the symmetry difference of the same surface width:

[0118] The difference percentage of symmetry of the same width on the C surface

[0119] In the above formula, is the percentage difference in symmetry between the C-surface and the same-surface width, The width of the left side of the C surface. The width of the right side of the C surface. To take the absolute value function, is the maximum value function.

[0120] Similarly, the percentage difference in symmetry between SI planes

[0121] In the above formula, is the percentage difference in symmetry between SI planes. The width of the left side of the SI surface. It is the width of the right side of the SI surface.

[0122] (2) Calculation method of symmetry difference of different surfaces:

[0123] Percentage difference in symmetry between different face widths:

[0124]

[0125] In the above formula, is the percentage difference in symmetry of different face widths, is the maximum value among C1, C2, SI1, and SI2, is the minimum value found from the remaining non-maximum groups.

[0126] (3) Finally, determine the symmetry level of the surface according to Table 2

[0127]

[0128] Table 2

[0129] As can be seen from the above table, in terms of the grading of the width symmetry, the embodiments of the present invention are divided into five grades, among which the lowest grade is downgraded, and the second lowest grade requires rework.

[0130] As mentioned above, for P-grade face width, edge chipping is also required, and the final notch grade is determined by combining the edge chipping grade. Generally speaking, the notch grade is based on the lowest grade between the edge chipping grade and the face width symmetry grade.

[0131] In terms of edge chipping grade determination, the present invention discusses the following steps in detail.

[0132] In step 104, when the surface width grade is F, the substrate is judged for edge chipping. When the edge chipping judgment result is lower than the edge chipping grade threshold, the substrate is determined to be a degraded substrate; otherwise, the substrate is reworked.

[0133] In some embodiments, determining edge collapse of the substrate includes:

[0134] Get the number of chipping edges, maximum chipping edge depth and maximum chipping edge length;

[0135] If the edge chipping number exceeds an edge chipping threshold or the maximum edge chipping depth exceeds a depth threshold, the substrate is determined to be a degraded substrate;

[0136] Otherwise, perform the following steps:

[0137] Determine the size grade according to the size range of the maximum chipping length;

[0138] Determining a depth level according to a depth range where the maximum edge chipping depth is located;

[0139] If the depth level is lower than the size level, the next level below the size level is used as the chipping level;

[0140] Otherwise, the limit of chipping quantity is determined according to the size grade;

[0141] If the chipping amount exceeds the chipping amount limit, the next level of the size level is used as the chipping level;

[0142] Otherwise, the size grade is regarded as the chipping grade.

[0143] For example, for a substrate with an F-grade width, if the edge chipping level is the lowest, the substrate will be considered a downgraded substrate; otherwise, the substrate will undergo rework. For a substrate with a P-grade width, the substrate with the lowest edge chipping level will be considered a downgraded substrate, and the substrate with the next lowest edge chipping level will undergo rework.

[0144] In terms of edge chipping grade determination, the three dimensions of maximum edge chipping length, maximum edge chipping depth and number of edge chips are integrated. The maximum edge chipping length refers to the maximum value of the edge chipping length.

[0145] The determination of edge collapse grade is mainly based on Table 3:

[0146]

[0147] Table 3

[0148] In terms of applying Table 3, the embodiment of the present invention first determines the level of the maximum chipping length according to the above table, and then determines the size level of the maximum chipping depth. If the size level of the maximum chipping depth is lower than the level of the maximum chipping length, the next level of the maximum chipping length level is used as the notch level.

[0149] Next, find the limit of the number of chipping edges from the second column of the above table based on the level of the maximum chipping edge length. If the number of chipping edges exceeds the limit, the next level of the maximum chipping edge length level will be used as the notch level.

[0150] Otherwise, the notch grade is determined based on the grade of the maximum chipping length.

[0151] In addition, in some scenarios, the number of chipping edges is greater than 5, or the maximum chipping edge depth is greater than the substrate thickness. In this case, the notch level is directly positioned as downgraded (NG).

[0152] Examples and Comparative Examples:

[0153] Use a profilometer to inspect the substrate for notch, and test C1, C2, SI1, and SI2. Use a microscope to inspect the substrate for notch edge collapse.

[0154] Example 1:

[0155] The results of substrate A are C1=220.04μm, C2=231.01μm, SI1=187.20μm, SI2=189.24μm, the substrate thickness is 350μm, and the maximum chipping length is 0μm. ， The maximum chipping depth is 0μm ， The number of chipped edges is 0.

[0156] (1) Width determination: P level

[0157] (2) Determination of symmetry differences in the surface area

[0158] ① Calculation method of the symmetry difference of the same surface width:

[0159] The difference percentage of symmetry of the same width on the C surface ×100%=4.75%;

[0160] The SI plane symmetry difference percentage Y= ×100%=1.08%;

[0161] ② Calculation method of the difference in symmetry of different surfaces:

[0162] The difference percentage of symmetry between different faces Z= ×100%=18.96%.

[0163] ③ Comprehensive grading of surface symmetry

[0164] The percentage difference in surface width symmetry of the same surface: the percentage difference in symmetry of the C surface is 4.75% < 20%, the percentage difference in symmetry of the SI surface is 1.08% < 20% and the percentage difference in symmetry of the different surfaces is 18.96% < 20%. The surface width symmetry is judged to be P+.

[0165] (3) Determination of edge collapse level

[0166] The maximum edge chipping length was measured to be 0 μm, the maximum edge chipping depth was 0 μm, the number of edge chips was 0, and the edge chipping grade was judged to be P+.

[0167] (4) Comprehensive grade determination

[0168] The surface symmetry difference grade is judged to be P+, ​​the edge collapse grade is judged to be P+, ​​and the comprehensive grade is judged to be P+.

[0169] Example 2:

[0170] The measurement results of substrate B are C1=215.36μm, C2=235.78μm, SI1=185.23μm, SI2=188.67μm, the substrate thickness is 350μm, the maximum chipping length is 40μm, the maximum chipping depth is 175μm, and the number of chippings is 3.

[0171] (1) Width determination: P level

[0172] (2) Determination of symmetry differences in the surface area

[0173] ① Calculation method of the symmetry difference of the same surface width:

[0174] The difference percentage of symmetry of the same width on the C surface ×100%=8.66%;

[0175] The SI plane symmetry difference percentage Y= ×100%=1.82%;

[0176] ② Calculation method of the difference in symmetry of different surfaces:

[0177] The difference percentage of symmetry between different faces Z= ×100%=21.44%.

[0178] ③ Comprehensive grading of surface symmetry

[0179] The percentage difference of symmetry of the same surface: the percentage difference of symmetry of the C surface is 8.66% < 20%, the percentage difference of symmetry of the SI surface is 1.82% < 20%, the percentage difference of symmetry of different surfaces is 20% < 21.44% < 40%, and the surface symmetry is judged to be A.

[0180] (3) Determination of edge collapse level

[0181] The maximum chipping length was measured to be 40 μm, the maximum chipping depth was 175 μm, the number of chippings was 3, and the chipping grade was judged to be C.

[0182] (4) Comprehensive grade determination

[0183] The surface symmetry difference grade was judged as A, the edge collapse grade was judged as C, and the comprehensive grade was judged as C.

[0184] Example 3:

[0185] The results of substrate C measurement are C1=186.23μm, C2=119.31μm, SI1=299.42μm, SI2=115.02μm, the substrate thickness is 350μm, the maximum chipping length is 200μm, the maximum chipping depth is 350μm, and the number of chippings is 1.

[0186] (1) Width determination: C2, SI2 < 150 μm, determined as Class F.

[0187] (2) Determination of edge collapse level

[0188] The number of chippings measured was 1, the maximum chipping length was 200 μm, the maximum chipping depth was 350 μm, and the chipping level was judged to be NG.

[0189] (3) Comprehensive grade determination

[0190] The surface width was judged to be F, the edge collapse level was judged to be NG, and the comprehensive level was judged to be NG.

[0191] Example 4:

[0192] The results of substrate D measurement are C1 = 212.13μm, C2 = 300.32μm, SI1 = 178.69μm, the substrate thickness is 500μm, SI2 = 149.28μm. The number of chipped edges is 0.

[0193] (1) Width determination: C2>300μm, SI2<150μm, determined as Class F.

[0194] (2) Determination of edge collapse level

[0195] The number of edge chips measured was 0, the longest edge chip length was 0 μm, and the edge chip grade was judged to be P+.

[0196] (3) Comprehensive grade determination

[0197] The surface width is judged to be F, the edge collapse level is judged to be P+, ​​and the comprehensive level is judged to be F, so rework is allowed.

[0198] Stability verification

[0199] The substrate notch position is tested for width and edge chipping. The width test is performed using a profilometer, and the edge chipping is detected using a microscope.

[0200] The test conditions of the profilometer are: resolution 3088*2076PPI, test time 60s, and exposure time 2.697ms.

[0201] The test conditions of the microscope are: resolution 3088*2076PPI, exposure time 2.697ms, 50X reflection.

[0202] Conventional testing method: judge according to the standard, and the judgment method is human eyes with the help of halogen spotlight.

[0203] The substrate thickness is 500 μm.

[0204] A commonly used grading method is Figure 5 As shown, the level determination method is:

[0205] (1) Width uniformity: The human eye uses a halogen spotlight to judge the width of the same surface: observe the uniformity of the width;

[0206] (2) Determination of chipping grade: If the maximum chipping length is less than 200 μm and the number is less than 3, it is P grade; if the maximum chipping length is ≥200 μm and the number is ≥3, it is NG grade.

[0207] (3) Comprehensive judgment: If any one of the items is not met, the product will be downgraded.

[0208] The test results are as follows:

[0209] (1) Comparison with currently used methods is shown in Table 4 below

[0210]

[0211] Table 4

[0212] Judging from the judgment results of the two methods, the consistency of the two methods is (25-4) / 25*100%=84%.

[0213] Analysis of inconsistent substrates:

[0214] (1) Substrate 3

[0215] The test results showed C1 = 231.05 μm, C2 = 145.23 μm, SI1 = 254.02 μm, and SI2 = 207.17 μm. The maximum chipping length was 80.00 μm, the maximum chipping depth was 100.02 μm, and there were 2 chippings.

[0216] According to the method of this patent:

[0217] Width determination: 145.23<150, determined as F grade;

[0218] Edge chipping judgment: the maximum edge chipping length is 80.00μm, the maximum edge chipping depth is 100.02μm, the number of edge chips is 2, and it is judged as B.

[0219] Comprehensive judgment is made to conduct rework to reduce the symmetry of the width difference and enhance product quality.

[0220] Rating according to conventional methods: the surface width is uniform, the edge collapse meets the standards, and it is judged to be P grade.

[0221] Possible problems: If the grading is done according to conventional methods, complaints may be filed due to poor uniformity of the surface.

[0222] (2) Substrate 17

[0223] The test results showed C1 = 239.38 μm, C2 = 240.45 μm, SI1 = 185.26 μm, and SI2 = 179.23 μm. The maximum chipping length was 132.28 μm, the maximum chipping depth was 20.59 μm, and there were two chippings.

[0224] According to the method of this patent:

[0225] Width determination: P level;

[0226] Determination of symmetry difference of surface width:

[0227] Calculation method of the symmetry difference of the same surface:

[0228] The difference percentage of symmetry of the same width on the C surface ×100%=0.44%;

[0229] The SI plane symmetry difference percentage Y= ×100%=3.17%;

[0230] Calculation method for the difference in symmetry of different facets:

[0231] The difference percentage of symmetry between different faces Z= ×100%=25.40%.

[0232] Comprehensive grading of surface symmetry:

[0233] The percentage difference in symmetry of the same surface width: the percentage difference in symmetry of the C surface is 0.44% < 20%, the percentage difference in symmetry of the SI surface is 3.17% < 20% and the percentage difference in symmetry of different surfaces is 20% < 25.40% < 40%. The surface width symmetry is judged to be A.

[0234] Determination of chipping grade: The maximum chipping length is 132.28μm, the maximum chipping depth is 20.59μm, and the number of chippings is 2, which is judged as NG.

[0235] According to the conventional method, the uniformity of the surface width is acceptable, the size, depth and number of chipped edges are judged as P, and the comprehensive judgment is P.

[0236] Possible problems: Complaints may arise due to large chipping size.

[0237] (3) Substrate 19

[0238] The test results showed that C1 = 72.05 μm, C2 = 166.01 μm, SI1 = 398.00 μm, and SI2 = 323.23 μm. There were no chipping edges.

[0239] According to the method of this patent:

[0240] Width determination: Grade F;

[0241] Edge chipping judgment: Maximum edge chipping length is 0μm ， The number of chipped edges is 0, and it is judged as P+.

[0242] The comprehensive judgment is F grade and rework is carried out to reduce the symmetry of the surface width and enhance the product quality.

[0243] Rating according to conventional methods: no chipping, directly downgraded to NG due to uneven width, wasting materials.

[0244] (4) Substrate 24

[0245] The test results showed C1 = 216.16μm, C2 = 213.13μm, SI1 = 242.21μm, and SI2 = 178.18μm. The maximum chipping length was 12.25μm, the maximum chipping depth was 5.62μm, and there were three chippings.

[0246] According to the method of this patent:

[0247] Width determination: P level;

[0248] Determination of symmetry difference of surface width:

[0249] Calculation method of the symmetry difference of the same surface:

[0250] The difference percentage of symmetry of the same width on the C surface ×100%=1.40%;

[0251] The SI plane symmetry difference percentage Y= ×100%=26.44%;

[0252] Calculation method for the difference in symmetry of different facets:

[0253] The difference percentage of symmetry between different faces Z= ×100%=12.01%.

[0254] Comprehensive grading of surface symmetry

[0255] The percentage difference in symmetry of the same surface width: the percentage difference in symmetry of the C surface is 0.44% < 20%, the percentage difference in symmetry of the SI surface is 3.17% < 20% and the percentage difference in symmetry of different surfaces is 20% < 25.40% < 40%. The surface width symmetry is judged to be A.

[0256] Determination of chipping grade: the maximum chipping length is 12.25μm, the maximum chipping depth is 5.62μm, the number of chippings is 3, and it is judged as B.

[0257] The overall grade is B.

[0258] According to the conventional method, the uniformity of the surface width is acceptable, the size and number of chipped edges are judged to be NG, and the overall judgment is NG.

[0259] Possible problems: Due to the small size of the chipping, it is directly judged as NG, resulting in material waste.

[0260] The above substrate was tested 5 times in a row to determine the repeatability, see Table 5:

[0261]

[0262] After 5 consecutive tests, the results of the 5th test on the 16th piece were inconsistent with the previous 4 tests. The repeatability accuracy is 24 / 25*100*=more than 96%.

[0263] The present invention provides a method for determining substrate notch grade. The method first obtains the surface width of the substrate notch; then, based on the surface width, the surface grade is determined as either P or F; if the surface grade is P, the substrate is subjected to surface symmetry and edge collapse determinations, and the substrate grade is determined based on the results of the surface symmetry and edge collapse determinations; finally, if the surface grade is F, the substrate is subjected to edge collapse determination. If the edge collapse determination result is below the edge collapse grade threshold, the substrate is determined as a downgraded substrate; otherwise, the substrate is reworked. The method can accurately classify the processing grade of the notch, adapting to the needs of different subsequent processing, and improving the yield rate and processing efficiency.

[0264] The grade determination method of the present invention can reduce subsequent process matching failures caused by notch defects, such as lithography alignment deviation and uneven film substrate. It can also reduce the risk of edge collapse defects expanding in subsequent processes through precise screening, identify high-risk substrates in advance, and optimize rework strategies through grade processing to avoid material loss caused by excessive rework.

[0265] The method of the present invention can achieve quality traceability optimization: through quantitative grading, a digital quality file is established to facilitate defect tracing analysis; the adaptability of substrate equipment graded by the method of the present invention is enhanced: the grading results can automatically match processing equipment with different precision requirements; the multi-parameter judgment framework of surface width + symmetry + edge collapse is compatible with AI algorithm upgrades; and through graded pre-judgment, online detection time is reduced and work efficiency is improved.

[0266] It should be understood that the size of the serial numbers of each step in the above embodiment does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present invention.

[0267] The following is an embodiment of the device of the present invention. For details not described in detail, please refer to the corresponding method embodiment described above.

[0268] Figure 2 This is a functional block diagram of a substrate notch level determination device provided by an embodiment of the present invention, referring to Figure 2 The substrate notch grade determination device includes: a surface width acquisition module 201, a surface width grading module 202, a first grading module 203 and a second grading module 204, wherein:

[0269] A surface width acquisition module 201 is used to acquire the surface width of the substrate notch;

[0270] A width grading module 202 is configured to grade the width of the surface into P or F according to the width of the surface;

[0271] The first grading module 203 is configured to perform a surface width symmetry determination and an edge chipping determination on the substrate when the surface width grade is P grade, and determine the grade of the substrate according to the results of the surface width symmetry determination and the edge chipping determination;

[0272] The second grading module 204 is used to determine the edge chipping of the substrate when the surface width grade is F. When the edge chipping determination result is lower than the edge chipping grade threshold, the substrate is determined to be a degraded substrate; otherwise, the substrate is reworked.

[0273] Figure 3 : is a functional block diagram of an electronic device provided by an embodiment of the present invention. Figure 3 As shown, the electronic device 3 of this embodiment includes: a processor 300 and a memory 301, wherein the memory 301 stores a computer program 302 that can be run on the processor 300. When the processor 300 executes the computer program 302, the steps in the above-mentioned substrate notch level determination method and embodiment are implemented, such as Figure 1 Steps 101 to 104 are shown.

[0274] Illustratively, the computer program 302 may be divided into one or more modules / units, and the one or more modules / units are stored in the memory 301 and executed by the processor 300 to implement the present invention.

[0275] The electronic device 3 may be a computing device such as a desktop computer, a notebook, a PDA, or a cloud server. The electronic device 3 may include, but is not limited to, a processor 300 and a memory 301. Those skilled in the art will understand that Figure 3 It is only an example of the electronic device 3 and does not constitute a limitation of the electronic device 3. It may include more or fewer components than shown in the figure, or a combination of certain components, or different components. For example, the electronic device 3 may also include input and output devices, network access devices, buses, etc.

[0276] The processor 300 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor.

[0277] The memory 301 may be an internal storage unit of the electronic device 3, such as a hard drive or memory of the electronic device 3. The memory 301 may also be an external storage device of the electronic device 3, such as a plug-in hard drive, a Smart Media Card (SMC), a Secure Digital (SD) card, a flash memory card, etc. equipped on the electronic device 3. Furthermore, the memory 301 may include both an internal storage unit of the electronic device 3 and an external storage device. The memory 301 is used to store the computer program 302 and other programs and data required by the electronic device 3. The memory 301 may also be used to temporarily store data that has been output or is about to be output.

[0278] Those skilled in the art can clearly understand that, for the convenience and brevity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In actual applications, the above-mentioned functions can be distributed and completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the implementation method can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of software functional units. In addition, the specific names of the functional units and modules are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application. The specific working process of the units and modules in the above-mentioned system can refer to the corresponding process in the aforementioned method implementation method, and will not be repeated here.

[0279] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0280] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the present invention.

[0281] In the embodiments provided by the present invention, it should be understood that the disclosed devices / electronic devices and methods can be implemented in other ways. For example, the device / electronic device embodiments described above are merely illustrative. For example, the division of the modules or units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0282] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of this embodiment.

[0283] In addition, the functional units in various embodiments of the present invention may be integrated into a single processing unit, each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0284] If the integrated module / unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the present invention can also implement all or part of the processes in the above-mentioned method embodiments by instructing the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium. When executed by a processor, the computer program can implement the steps of the above-mentioned method and device embodiments. The computer program includes computer program code, which can be in source code form, object code form, executable file, or some intermediate form. The computer-readable medium can include: any entity or device capable of carrying the computer program code, recording medium, USB flash drive, mobile hard drive, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signal, telecommunication signal, and software distribution medium.

[0285] The above-described embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention, and should all be included in the scope of protection of the present invention.

Claims

1. A method for determining substrate notch level, characterized in that: include: Get the width of the substrate notch; The surface width is determined as P or F according to the surface width; When the surface width grade is P grade, the substrate is subjected to surface width symmetry determination and edge collapse determination, and the grade of the substrate is determined according to the results of the surface width symmetry determination and the edge collapse determination; When the surface grade is F, the substrate is judged for edge chipping. When the edge chipping judgment result is lower than the edge chipping grade threshold, the substrate is determined to be a downgraded substrate; otherwise, the substrate is reworked.

2. The method for determining substrate notch level according to claim 1, wherein: Determining the symmetry of the substrate includes: Obtaining a first surface width, a second surface width, a third surface width, and a fourth surface width of the substrate, wherein the first surface width is determined based on the left half of the first surface of the substrate notch, the second surface width is determined based on the right half of the first surface of the substrate notch, the third surface width is determined based on the left half of the second surface of the substrate notch, and the fourth surface width is determined based on the right half of the second surface of the substrate notch; determining a first-plane symmetry difference based on the first-plane width and the second-plane width; determining a symmetry difference of the second surface according to the third surface width and the fourth surface width; Determining a total symmetry difference based on the first width, the second width, the third width, and the fourth width; The plane symmetry level is determined according to the first plane symmetry difference, the second plane symmetry difference, and the overall symmetry difference.

3. The method for determining substrate notch level according to claim 2, wherein: The first-plane symmetry difference and the second-plane symmetry difference are respectively determined according to a first formula, wherein the first formula is: Where, To account for symmetry differences, To take the absolute value function, To obtain the maximum value function, is the average width of the left half of the substrate surface, is the average width of the right half of the substrate surface; Determining the total symmetry difference according to the first width, the second width, the third width, and the fourth width includes: Selecting the largest width from among the first width, the second width, the third width, and the fourth width as the third width; The opposite surface of the surface where the third width is located is used as the target surface; Taking the minimum value among the multiple widths corresponding to the target surface as the fourth width; The total symmetry difference is determined according to the third width, the fourth width, and a second formula, wherein the second formula is: Where, is the total symmetry difference, is the third width, The fourth width.

4. The method for determining substrate notch level according to claim 2, wherein: The determining of the plane symmetry level according to the first plane symmetry difference, the second plane symmetry difference, and the total symmetry difference includes: Determining a first plane width symmetry grade, a second plane width symmetry grade, and a total symmetry grade according to distribution intervals of the first plane symmetry difference, the second plane symmetry difference, and the total symmetry difference; If the first surface width symmetry level, the second surface width symmetry level, and the total symmetry level are different, a level other than the highest level and the lowest level is used as a target level, and a level next to the target level is used as the surface width symmetry level; Otherwise, the first surface width symmetry level, the second surface width symmetry level, and the overall symmetry level are used as the surface width symmetry level.

5. The method for determining substrate notch level according to claim 1, wherein: The determining of substrate edge collapse includes: Get the number of chipping edges, maximum chipping edge depth and maximum chipping edge length; If the edge chipping number exceeds an edge chipping threshold or the maximum edge chipping depth exceeds a depth threshold, the substrate is determined to be a degraded substrate; Otherwise, perform the following steps: Determine the size grade according to the size range of the maximum chipping length; Determining a depth level according to a depth range where the maximum edge chipping depth is located; If the depth level is lower than the size level, the next level below the size level is used as the chipping level; Otherwise, the limit of chipping quantity is determined according to the size grade; If the chipping amount exceeds the chipping amount limit, the next level of the size level is used as the chipping level; Otherwise, the size grade is regarded as the chipping grade.

6. The method for determining substrate notch level according to claim 1, wherein: The step of determining the grade of the substrate according to the results of the surface symmetry determination and the edge chipping determination includes: The lowest level among the results of the surface symmetry determination and the results of the edge chipping determination is used as the grade of the substrate.

7. The method for determining substrate notch level according to any one of claims 1 to 6, characterized in that: The results of the surface symmetry determination and the edge chipping determination each include at least three levels; For substrates with a surface area grade of P, after determining the grade of the substrate, the following are also included: If the grade of the substrate is the lowest grade, the substrate is determined to be a degraded substrate; If the grade of the substrate is the next lowest grade, the substrate is reworked.

8. A substrate notch level determination device, characterized in that: For implementing the substrate notch level determination method according to any one of claims 1 to 7, the substrate notch level determination device comprises: A surface width acquisition module is used to obtain the surface width of the substrate notch; A width grading module, configured to grade the width into P or F according to the width of the width; The first grading module is used to perform surface width symmetry determination and edge collapse determination on the substrate when the surface width grade is P grade, and determine the grade of the substrate according to the results of the surface width symmetry determination and the results of the edge collapse determination; as well as, The second grading module is used to determine the edge collapse of the substrate when the surface grade is F. When the edge collapse determination result is lower than the edge collapse grade threshold, the substrate is determined to be a degraded substrate; otherwise, the substrate is reworked.

9. An electronic device comprising a memory and a processor, wherein the memory stores a computer program that can be run on the processor, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 7 are implemented.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 7 are implemented.

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