Light-emitting diode and light-emitting diode preparation method

Abstract

The invention provides a light emitting diode and a light emitting diode preparation method. The light emitting diode comprises an epitaxial structure, a current blocking layer, a transparent conductive layer, a passivation layer, a first electrode and a second electrode, the epitaxial structure is provided with a first strip-shaped groove and a second strip-shaped groove, one end of the first strip-shaped groove is connected with one end of the second strip-shaped groove, the current blocking layer and the transparent conductive layer are sequentially stacked in an area, without grooves, of the epitaxial structure, and the passivation layer covers the transparent conductive layer, the first strip-shaped groove and the second strip-shaped groove; the first electrode and the second electrode are located on the surface of the passivation layer; the first electrode comprises a first sub-electrode, a second sub-electrode and a third sub-electrode of which one ends are connected, the current blocking layer comprises a first blocking structure, a second blocking structure and a third blocking structure, and the second electrode comprises a fourth sub-electrode and a fifth sub-electrode of which one ends are connected.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting devices, and particularly to a light-emitting diode and a method for manufacturing the same. Background Art

[0002] A light-emitting diode (LED) is a semiconductor device that can emit light. It is widely used in various fields such as lighting, display technology, medical equipment, and plant growth lights.

[0003] Related technologies provide a light-emitting diode. The structure of the light-emitting diode includes an epitaxial structure, a current blocking layer, a transparent conductive layer, a passivation layer, a first electrode, and a second electrode. The current blocking layer and the transparent conductive layer are sequentially stacked on the epitaxial structure, and the passivation layer covers the transparent conductive layer and the epitaxial structure; the first electrode and the second electrode are located on the surface of the passivation layer.

[0004] In related technologies, the current distribution of the light-emitting diode is uneven, the current loss is large, there is a certain amount of energy waste, and it is necessary to further improve the light-emitting efficiency. Summary of the Invention

[0005] Embodiments of the present disclosure provide a light-emitting diode and a method for manufacturing the same, which are beneficial to the current distribution of the light-emitting diode, reduce energy waste, and improve the light-emitting efficiency. The technical solutions are as follows:

[0006] On the one hand, embodiments of the present disclosure provide a light-emitting diode, which includes:

[0007] An epitaxial structure, a current blocking layer, a transparent conductive layer, a passivation layer, a first electrode, and a second electrode;

[0008] The epitaxial structure has a first strip-shaped groove and a second strip-shaped groove connected at one end. The current blocking layer and the transparent conductive layer are sequentially stacked on the area of the epitaxial structure without grooves. The passivation layer covers the transparent conductive layer, the first strip-shaped groove, and the second strip-shaped groove; the first electrode and the second electrode are located on the surface of the passivation layer;

[0009] The first electrode includes a first sub-electrode, a second sub-electrode, and a third sub-electrode connected at one end. The current blocking layer includes a first blocking structure, a second blocking structure, and a third blocking structure. The second electrode includes a fourth sub-electrode and a fifth sub-electrode connected at one end;

[0010] The first blocking structure, the second blocking structure, and the third blocking structure are respectively located between the first sub-electrode, the second sub-electrode, the third sub-electrode, and the epitaxial structure; the fourth sub-electrode and the fifth sub-electrode are respectively located in the first strip-shaped groove and the second strip-shaped groove;

[0011] The first sub - electrode, the second sub - electrode, and the third sub - electrode are respectively electrically connected to the transparent conductive layer through a set of through - holes on the passivation layer. The fourth sub - electrode and the fifth sub - electrode are respectively electrically connected to the epitaxial structure through the set of through - holes on the passivation layer. The set of through - holes includes a plurality of through - holes arranged at intervals;

[0012] The first sub - electrode, the second sub - electrode, the third sub - electrode, the fourth sub - electrode, and the fifth sub - electrode are all strip - shaped structures that gradually taper from the end to the middle.

[0013] Optionally, the edges of the patterns of the first strip - shaped groove, the second strip - shaped groove, the first blocking structure, the second blocking structure, the third blocking structure, the first sub - electrode, the second sub - electrode, the third sub - electrode, the fourth sub - electrode, and the fifth sub - electrode on the plane where the epitaxial structure is located all include a plurality of connected line segments. The plurality of line segments include straight lines and curves;

[0014] Among them, the function of the curved line segment is:

[0015] x = x0+Rcosα;

[0016] y = y0+Rsinα;

[0017] The function of the straight line segment is:

[0018] y = y1;

[0019] Among them, x represents the abscissa of the curved line segment, y represents the ordinate of the curved line segment or the straight line segment, x0 represents the abscissa of the center of the curved line segment, y0 represents the ordinate of the center of the curved line segment, y1 is a constant, R represents the radius of the curved line segment, with the unit of μm; α is the independent variable, with the unit of degree.

[0020] Optionally, the first strip - shaped groove of the epitaxial structure includes line segments 1 to 14 connected to each other; the second strip - shaped groove is an axisymmetric figure with the first strip - shaped groove;

[0021] Among them, line segments 1, 2, 3, 4, 6, 7, 8, 10, 11, 12, and 14 are curves; line segments 5, 9, and 13 are straight lines;

[0022] The x0 values of the line segments 1 to 4, the line segments 6 to 8, and the line segments 10 to 14 are respectively: 50, 4, -167, -142, -904, -916, -902, -146, -138, 39, and 50;

[0023] The y0 values of the line segments 1 to 4, the line segments 6 to 8, and the line segments 10 to 14 are respectively: 0, 37, -171, -156, 48, 107, 166, -174, -152, 60, and 0;

[0024] The R values of the line segments 1 to 4, the line segments 6 to 8, and the line segments 10 to 14 are respectively: 50, 10, 275, 253, 50, 11, 50, 290, 267, 10, and 50;

[0025] The starting values of α of the line segments 1 to 4, the line segments 6 to 8, and the line segments 10 to 14 are respectively: -180, -34, 51, 51, 90, -78, 275, -272, 75, 230, and -90;

[0026] The ending values of α of the line segments 1 to 4, the line segments 6 to 8, and the line segments 10 to 14 are respectively: -219, 60, 70, 70, 102, -282, 270, -285, 50, 270, and 0;

[0027] The y1 values of the line segments 5, the line segment 9, and the line segment 13 are respectively: 98, 116, and 51;

[0028] For each of the above line segments, x0, y0, y1, and R are within ±5 of the said values, and the starting value and the ending value of the value range of α are within ±2 of the said values.

[0029] Optionally, the first blocking structure of the current blocking layer includes the line segments 1 to 10 connected to each other; the second blocking structure includes the line segments 11 to 20 connected to each other; the third blocking structure is an axisymmetric figure with the first blocking structure;

[0030] Among them, the line segments 1, 2, 3, 5, 6, 7, 8, 9, 11, 13, 15, 17, 18, and 19 are curves; the line segments 4, 10, 12, 14, 16, and 20 are straight lines;

[0031] The x0 values of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: 7, -231, 6, 720, 1044, 1017, 973, 718, -30, -70, -30, 865, 876, and 865;

[0032] The y0 values of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: -253, -142, -253, -504, -37, -87, -123, -507, 9, -489, 64, 9, and -46;

[0033] The R values of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: 253, 10, 273, 523, 46, 11, 46, 507, 508, 11, 508, 46, 11, and 46;

[0034] The starting values of α of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: 92, -30, -205, -269, 235, -299, 40, 56, -87, -103, -270, 270, -258, and 78;

[0035] The ending values of α of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: 155, -210, -269, -305, 241, -140, 56, 91, -90, -257, -273, 282, -102, and 90;

[0036] The y1 values of the line segments 4, 10, 12, 14, 16, and 20 are respectively: 18, 0, -1, 19, 18, and 0;

[0037] For each of the above line segments, x0, y0, y1, and R are within the range of ±5 of the said values, and the starting value and the ending value of the range of the α value are within the range of ±2 of the said values.

[0038] Optionally, the first sub - electrode and the second sub - electrode of the first electrode include the line segments 1 to 14 which are connected to each other; the second sub - electrode includes the line segments 15 to 19 which are connected to each other; the third sub - electrode and the first sub - electrode are axisymmetric figures;

[0039] Among them, the line segments 1, 2, 3, 5, 6, 7, 8, 9, 11, 12, 13, 14, 16, 18, and 19 are curves; the line segments 4, 10, 15, and 17 are straight lines;

[0040] The x0 values of the line segments 1 to 3, 5 to 9, 11 to 14, 16, 18 to 19 are respectively: 40, 3, 270, 983, 1282, 1280, 1272, 981, 270, 55, 40, 96, 141, 1043, and 1047;

[0041] The y0 values of the line segments 1 to 3, 5 to 9, 11, 13, 15, 17 to 19 are respectively: 0, 47, -52, -301, 123, 116, 115, -304, -51, 58, 0, 22, -498, 6, and 0;

[0042] The R values of the line segments 1 to 3, 5 to 9, 11, 13, 15, 17 to 19 are respectively: 40, 20, 264, 514, 5, 2, 5, 515, 262, 20, 40, 20, 500, 5, and 2;

[0043] The starting values of α of the line segments 1 to 3, 5 to 9, 11, 13, 15, 17 to 19 are respectively: -180, 308, -200, -269, 239, -287, 12, 55, 92, 153, -284, 201, -270, 270, and -237;

[0044] The ending values of α of the line segments 1 to 3, 5 to 9, 11, 13, 15, 17 to 19 are respectively: -232, 340, -269, -305, 181, -168, 55, 91, 153, 256, -339, 270, -273, 303, and -360;

[0045] The y1 values of the line segments 4, 10, 12, 15, and 17 are respectively: 213, 211, 2, and 1;

[0046] For each of the above line segments, x0, y0, y1, and R are within ±5 of the specified values, and the starting and ending values of the range of values of α are within ±2 of the specified values.

[0047] Optionally, the fourth sub - electrode of the second electrode includes line segments 1 to 14 connected to each other; the fifth sub - electrode and the fourth sub - electrode are axisymmetric figures;

[0048] Among them, line segments 1, 2, 3, 4, 6, 7, 8, 10, 11, 12, and 14 are curves; line segments 5, 9, and 13 are straight lines;

[0049] The x0 values of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: 40, - 8, - 162, - 158, - 920, - 925, - 920, - 150, - 148, 33, and 40;

[0050] The y0 values of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: 0, 36, - 176, - 183, 100, 106, 113, - 147, - 153, 60, and 0;

[0051] The R values of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: 40, 20, 283, 288, 5, 3, 5, 254, 259, 20, and 40;

[0052] The starting values of α of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: - 180, 323, 54, 74, 90, - 55, 235, - 270, - 285, 230, and - 270;

[0053] The ending values of α of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: - 217, 54, 73, 88, 125, - 305, 270, - 286, - 310, 270, and - 360;

[0054] The y1 values of line segments 5, 9, and 13 are respectively: 105, 108, and 40;

[0055] For each of the above line segments, x0, y0, y1, and R are within ±5 of the specified values, and the starting and ending values of the range of values of α are within ±2 of the specified values.

[0056] On the other hand, an embodiment of the present disclosure provides a method for manufacturing a light-emitting diode, the method comprising:

[0057] Fabricating an epitaxial structure having a first strip-shaped groove and a second strip-shaped groove connected at one end;

[0058] Fabricating a current blocking layer in a region of the epitaxial structure where no groove is formed, the current blocking layer including a first blocking structure, a second blocking structure, and a third blocking structure;

[0059] Fabricating a transparent conductive layer laminated on a region of the epitaxial structure where no groove is formed;

[0060] Fabricating a passivation layer covering the transparent conductive layer, the first strip-shaped groove, and the second strip-shaped groove;

[0061] Fabricating a first electrode and a second electrode on the surface of the passivation layer; the first electrode includes a first sub-electrode, a second sub-electrode, and a third sub-electrode connected at one end, and the second electrode includes a fourth sub-electrode and a fifth sub-electrode connected at one end; the first blocking structure, the second blocking structure, and the third blocking structure are respectively located between the first sub-electrode, the second sub-electrode, the third sub-electrode, and the epitaxial structure; the fourth sub-electrode and the fifth sub-electrode are respectively located in the first strip-shaped groove and the second strip-shaped groove; the first sub-electrode, the second sub-electrode, and the third sub-electrode are respectively electrically connected to the transparent conductive layer through a set of through holes in the passivation layer, and the fourth sub-electrode and the fifth sub-electrode are respectively electrically connected to the epitaxial structure through a set of through holes in the passivation layer, the set of through holes including a plurality of through holes arranged at intervals; the first sub-electrode, the second sub-electrode, the third sub-electrode, the fourth sub-electrode, and the fifth sub-electrode are all strip-shaped structures that gradually taper from the end to the middle.

[0062] Optionally, edges of patterns of the first strip-shaped groove, the second strip-shaped groove, the first blocking structure, the second blocking structure, the third blocking structure, the first sub-electrode, the second sub-electrode, the third sub-electrode, the fourth sub-electrode, and the fifth sub-electrode on a plane where the surface of the epitaxial structure is located all include a plurality of connected line segments, and the plurality of line segments include straight lines and curves;

[0063] Wherein, the function of the curved line segment is:

[0064] x = x0 + Rcosα;

[0065] y = y0 + Rsinα;

[0066] The function of the straight line segment is as follows:

[0067] y = y1;

[0068] Wherein, x represents the abscissa of the curve segment, y represents the ordinate of the curve segment or the straight line segment, x0 represents the abscissa of the center of the curve segment, y0 represents the ordinate of the center of the curve segment, y1 is a constant, R represents the radius of the curve segment, with the unit of μm; α is the independent variable, with the unit of degree.

[0069] Optionally, the first strip-shaped groove pattern of the epitaxial structure includes line segments 1 to 14 connected to each other; the second strip-shaped groove is an axisymmetric figure with the first strip-shaped groove;

[0070] Wherein, line segments 1, 2, 3, 4, 6, 7, 8, 10, 11, 12, and 14 are curves; line segments 5, 9, and 13 are straight lines;

[0071] The values of x0 for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: 50, 4, -167, -142, -904, -916, -902, -146, -138, 39, and 50;

[0072] The values of y0 for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: 0, 37, -171, -156, 48, 107, 166, -174, -152, 60, and 0;

[0073] The values of R for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: 50, 10, 275, 253, 50, 11, 50, 290, 267, 10, and 50;

[0074] The starting values of α for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: -180, -34, 51, 51, 90, -78, 275, -272, 75, 230, and -90;

[0075] The ending values of α for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: -219, 60, 70, 70, 102, -282, 270, -285, 50, 270, and 0;

[0076] The values of y1 for line segments 5, 9, and 13 are respectively: 98, 116, and 51;

[0077] For each of the above line segments, x0, y0, y1, and R are within ±5 of the above values, and the starting value and the ending value of the range of the value of α are within ±2 of the above values.

[0078] Optionally, the first blocking structure of the current blocking layer includes line segments 1 to 10 connected to each other; the second blocking structure includes line segments 11 to 20 connected to each other; the third blocking structure and the first blocking structure are axisymmetric figures;

[0079] Among them, line segments 1, 2, 3, 5, 6, 7, 8, 9, 11, 13, 15, 17, 18, and 19 are curves; line segments 4, 10, 12, 14, 16, and 20 are straight lines;

[0080] The values of x0 of line segments 1 to 3, line segments 5 to 9, line segments 11, 13, 15, 17 to 19 are respectively: 7, -231, 6, 720, 1044, 1017, 973, 718, -30, -70, -30, 865, 876, and 865;

[0081] The values of y0 of line segments 1 to 3, line segments 5 to 9, line segments 11, 13, 15, 17 to 19 are respectively: -253, -142, -253, -504, -37, -87, -123, -507, 9, -489, 64, 9, and -46;

[0082] The values of R of line segments 1 to 3, line segments 5 to 9, line segments 11, 13, 15, 17 to 19 are respectively: 253, 10, 273, 523, 46, 11, 46, 507, 508, 11, 508, 46, 11, and 46;

[0083] The starting values of α of line segments 1 to 3, line segments 5 to 9, line segments 11, 13, 15, 17 to 19 are respectively: 92, -30, -205, -269, 235, -299, 40, 56, -87, -103, -270, 270, -258, and 78;

[0084] The end values of α for the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: 155, -210, -269, -305, 241, -140, 56, 91, -90, -257, -273, 282, -102, and 90;

[0085] The y1 values of the line segments 4, the line segment 10, the line segment 12, the line segment 14, the line segment 16, and the line segment 20 are respectively: 18, 0, -1, 19, 18, and 0;

[0086] For each of the above line segments, x0, y0, y1, and R are within the range of ±5 of the said values, and the starting value and the end value of the range of the α value are within the range of ±2 of the said values.

[0087] The beneficial effects brought by the technical solution provided by the embodiments of the present disclosure are:

[0088] In the embodiments of the present disclosure, the epitaxial structure has a first strip-shaped groove and a second strip-shaped groove connected at one end. The current blocking layer and the transparent conductive layer are sequentially stacked in the area of the epitaxial structure where no groove is opened. The passivation layer covers the transparent conductive layer, the first strip-shaped groove, and the second strip-shaped groove. The current blocking layer includes a first blocking structure, a second blocking structure, and a third blocking structure. The multiple blocking structures can change the current flow direction and avoid current aggregation. By adopting this structure, the current distribution can be further improved. The first electrode and the second electrode are located on the surface of the passivation layer. The first electrode includes a first sub-electrode, a second sub-electrode, and a third sub-electrode connected at one end. The second electrode includes a fourth sub-electrode and a fifth sub-electrode connected at one end. And each sub-electrode is a strip-shaped structure that gradually tapers from the end to the middle, and each sub-electrode is connected to the epitaxy through a group of through holes. By adopting the above groove, blocking layer, and electrode structures, the uniformity of the current distribution can be improved, and the light efficiency of the light-emitting diode can be increased. Through experimental comparison and verification, the light intensity and the light power efficiency of the light-emitting diode provided by the embodiments of the present disclosure are increased by about 2% compared with the light-emitting diode chip provided by the related technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0089] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present disclosure. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0090] Figure 1 is a schematic structural diagram of a light-emitting diode provided by the embodiments of the present disclosure;

[0091] Figure 2It is a top view of a light-emitting diode provided by an embodiment of the present disclosure;

[0092] Figure 3 It is a top view of a stepped structure of a light-emitting diode provided by an embodiment of the present disclosure;

[0093] Figure 4 It is a top view of a current blocking layer of a light-emitting diode provided by an embodiment of the present disclosure;

[0094] Figure 5 It is a top view of an electrode of a light-emitting diode provided by an embodiment of the present disclosure;

[0095] Figure 6 It is a top view of a passivation layer of a light-emitting diode provided by an embodiment of the present disclosure;

[0096] Figure 7 It is a schematic structural diagram of a light-emitting diode provided by an embodiment of the present disclosure;

[0097] Figure 8 It is a flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure;

[0098] Figure 9 It is a flowchart of another method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure;

[0099] Figure 10 It is a light intensity comparison diagram between a light-emitting diode chip provided by an embodiment of the present disclosure and a light-emitting diode chip provided by the related art;

[0100] Figure 11 It is a light power efficiency comparison diagram between a light-emitting diode chip provided by an embodiment of the present disclosure and a light-emitting diode chip provided by the related art.

[0101] The reference numerals are as follows:

[0102] 100: Substrate; 101: Epitaxial structure; 102: Current blocking layer; 103: Transparent conductive layer; 104: Passivation layer; 105: First electrode; 106: Second electrode; 107: DBR layer;

[0103] 201: First semiconductor layer; 202: Active layer; 203: Second semiconductor layer;

[0104] 301: Through hole;

[0105] 1011: First strip-shaped groove; 1012: Second strip-shaped groove;

[0106] 1021: First blocking structure; 1022: Second blocking structure; 1023: Third blocking structure;

[0107] 1051: The first sub - electrode; 1052: The second sub - electrode; 1053: The third sub - electrode;

[0108] 1061: The fourth sub - electrode; 1062: The fifth sub - electrode. Detailed implementation manners

[0109] To make the objectives, technical solutions and advantages of the present disclosure clearer, the following will further describe the embodiments of the present disclosure in detail with reference to the accompanying drawings.

[0110] Figure 1 It is a schematic structural diagram of a light - emitting diode provided by an embodiment of the present disclosure. Refer to Figure 1 , the light - emitting diode includes: an epitaxial structure 101, a current blocking layer 102, a transparent conductive layer 103, a passivation layer 104, a first electrode 105 and a second electrode 106.

[0111] Figure 2 It is a top - view of a light - emitting diode provided by an embodiment of the present disclosure, Figure 3 It is a top - view of a stepped structure of a light - emitting diode provided by an embodiment of the present disclosure. Refer to Figure 2 and Figure 3 , the epitaxial structure 101 has a first strip - shaped groove 1011 and a second strip - shaped groove 1012 connected at one end, the current blocking layer 102 and the transparent conductive layer 103 are sequentially stacked on the region 1013 of the epitaxial structure 101 without grooves, the passivation layer 104 covers the transparent conductive layer 103, the first strip - shaped groove 1011 and the second strip - shaped groove 1012; the first electrode 105 and the second electrode 106 are located on the surface of the passivation layer 104.

[0112] Figure 4 It is a top - view of the current blocking layer of a light - emitting diode provided by an embodiment of the present disclosure. Refer to Figure 4 , the current blocking layer 102 includes a first blocking structure 1021, a second blocking structure 1022 and a third blocking structure 1023.

[0113] Figure 5 It is a top - view of the electrode of a light - emitting diode provided by an embodiment of the present disclosure. Refer to Figure 5 , the first electrode 105 includes a first sub - electrode 1051, a second sub - electrode 1052 and a third sub - electrode 1053 connected at one end, and the second electrode 106 includes a fourth sub - electrode 1061 and a fifth sub - electrode 1062 connected at one end.

[0114] The first blocking structure 1021, the second blocking structure 1022, and the third blocking structure 1023 are respectively located between the first sub - electrode 1051, the second sub - electrode 1052, the third sub - electrode 1053 and the epitaxial structure 101; the fourth sub - electrode 1061 and the fifth sub - electrode 1062 are respectively located in the first strip - shaped groove 1011 and the second strip - shaped groove 1012.

[0115] Figure 6 is a top - view of a passivation layer of a light - emitting diode provided by an embodiment of the present disclosure. Refer to Figure 6 , and the passivation layer 104 is provided with multiple groups of through - holes 301.

[0116] As Figure 1 and 2 shown, the first sub - electrode 1051, the second sub - electrode 1052, and the third sub - electrode 1053 are respectively electrically connected to the transparent conductive layer 103 through a group of through - holes 301 on the passivation layer 104, and the fourth sub - electrode 1061 and the fifth sub - electrode 1062 are respectively electrically connected to the epitaxial structure 101 through a group of through - holes 301 on the passivation layer 104. A group of through - holes 301 includes multiple through - holes 301 arranged at intervals.

[0117] As Figure 5 shown, the first sub - electrode 1051, the second sub - electrode 1052, the third sub - electrode 1053, the fourth sub - electrode 1061, and the fifth sub - electrode 1062 are all strip - shaped structures that gradually taper from the end to the middle.

[0118] In the embodiment of the present disclosure, the epitaxial structure has a first strip - shaped groove and a second strip - shaped groove connected at one end. The current blocking layer and the transparent conductive layer are sequentially stacked in the area of the epitaxial structure without grooves. The passivation layer covers the transparent conductive layer, the first strip - shaped groove, and the second strip - shaped groove. The current blocking layer includes a first blocking structure, a second blocking structure, and a third blocking structure. Multiple blocking structures can change the current flow direction and avoid current aggregation. Adopting this structure can further improve the current distribution. The first electrode and the second electrode are located on the surface of the passivation layer. The first electrode includes a first sub - electrode, a second sub - electrode, and a third sub - electrode connected at one end. The second electrode includes a fourth sub - electrode and a fifth sub - electrode connected at one end. And each sub - electrode is a strip - shaped structure that gradually tapers from the end to the middle, and each sub - electrode is connected to the epitaxy through a group of through - holes. By adopting the above - mentioned groove, blocking layer, and electrode structures, the distribution uniformity of the current can be improved, and the light efficiency of the light - emitting diode can be increased. Through experimental comparison and verification, the light intensity and light power efficiency of the light - emitting diode provided by the embodiment of the present disclosure are increased by about 2% compared with the light - emitting diode chip provided by the related technology.

[0119] In the embodiments of the present disclosure, the edges of the patterns of the first strip-shaped groove 1011, the second strip-shaped groove 1012, the first blocking structure 1021, the second blocking structure 1022, the third blocking structure 1023, the first sub-electrode 1051, the second sub-electrode 1052, the third sub-electrode 1053, the fourth sub-electrode 1061, and the fifth sub-electrode 1062 on the plane where the epitaxial structure 101 is located all include multiple connected line segments, and the multiple line segments include straight lines and curves;

[0120] Among them, the function of the curved line segment is:

[0121] x = x0 + Rcosα;

[0122] y = y0 + Rsinα;

[0123] The function of the straight line segment is:

[0124] y = y1;

[0125] Among them, x represents the abscissa of the curved line segment, y represents the ordinate of the curved line segment or the straight line segment, x0 represents the abscissa of the center of the curved line segment, y0 represents the ordinate of the center of the curved line segment, y1 is a constant, R represents the radius of the curved line segment, and the units of x, y, x0, y0, y1, and R are μm; α is the independent variable, and the unit of α is degree.

[0126] As Figure 3 shown, the origin of the coordinate system is at a corner of the bottom surface of the epitaxial structure, for example, the lower left corner. Alternatively, the origin of the coordinate system is at a corner of the surface of the substrate where the epitaxial structure is located.

[0127] See Figure 3 , the first strip-shaped groove 1011 of the epitaxial structure 101 includes line segments 1 to 14 connected to each other; the second strip-shaped groove 1012 and the first strip-shaped groove 1011 are axisymmetric figures;

[0128] Among them, line segments 1, 2, 3, 4, 6, 7, 8, 10, 11, 12, and 14 are curves; line segments 5, 9, and 13 are straight lines;

[0129] The values of x0 for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are: 50, 4, -167, -142, -904, -916, -902, -146, -138, 39, and 50 respectively;

[0130] The values of y0 for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are: 0, 37, -171, -156, 48, 107, 166, -174, -152, 60, and 0 respectively;

[0131] The R values of Line Segment 1 to Line Segment 4, Line Segment 6 to Line Segment 8, and Line Segment 10 to Line Segment 14 are respectively: 50, 10, 275, 253, 50, 11, 50, 290, 267, 10, and 50;

[0132] The starting values of α for Line Segment 1 to Line Segment 4, Line Segment 6 to Line Segment 8, and Line Segment 10 to Line Segment 14 are respectively: -180, -34, 51, 51, 90, -78, 275, -272, 75, 230, and -90;

[0133] The ending values of α for Line Segment 1 to Line Segment 4, Line Segment 6 to Line Segment 8, and Line Segment 10 to Line Segment 14 are respectively: -219, 60, 70, 70, 102, -282, 270, -285, 50, 270, and 0;

[0134] The y1 values of Line Segment 5, Line Segment 9, and Line Segment 13 are respectively: 98, 116, and 51.

[0135] The x0 and y0 coordinates of the center of each curve segment trajectory function, the size of the radius R of the value, the starting value α1 and ending value α2 of the range of the independent variable α, and the rotation direction of the curve segment are shown in Table 1 below. At the same time, considering the process error, the x0 and y0 coordinates of the center of each curve segment and the value of the radius can be within the range of ±5 μm of the value in Table 1, and the starting value α1 and ending value α2 of the range of the independent variable α can be within the range of ±2° of the value in Table 1. For example, the value of the x0 coordinate of Line Segment 1 can be 45 - 55 μm.

[0136] Table 1

[0137]

[0138]

[0139] Among them, the value of the constant y1, the range of the independent variable x with the starting value x0 and ending value x1 are shown in Table 2 below. At the same time, considering the process error, the values of y1, the starting value x0, and the ending value x1 of each straight line segment can be within the range of ±5 μm of the value in Table 2.

[0140] Table 2

[0141]

[0142] After experimental verification, taking the above values for the first strip-shaped groove and the second strip-shaped groove can improve the current distribution of the epitaxial structure, enhance the current utilization rate of the epitaxial structure, and thus improve the luminous efficiency of the light-emitting diode.

[0143] See Figure 4, the first blocking structure 1021 of the current blocking layer 102 includes line segments 1 to 10 connected to each other; the second blocking structure 1022 includes line segments 11 to 20 connected to each other; the third blocking structure 1023 and the first blocking structure 1021 are axisymmetric figures;

[0144] Among them, line segments 1, 2, 3, 5, 6, 7, 8, 9, 11, 13, 15, 17, 18, and 19 are curves; line segments 4, 10, 12, 14, 16, and 20 are straight lines;

[0145] The x0 values of line segments 1 to 3, 5 to 9, 11, 13, 15, 17 to 19 are respectively: 7, -231, 6, 720, 1044, 1017, 973, 718, -30, -70, -30, 865, 876, and 865;

[0146] The y0 values of line segments 1 to 3, 5 to 9, 11, 13, 15, 17 to 19 are respectively: -253, -142, -253, -504, -37, -87, -123, -507, 9, -489, 64, 9, and -46;

[0147] The R values of line segments 1 to 3, 5 to 9, 11, 13, 15, 17 to 19 are respectively: 253, 10, 273, 523, 46, 11, 46, 507, 508, 11, 508, 46, 11, and 46;

[0148] The starting values of α of line segments 1 to 3, 5 to 9, 11, 13, 15, 17 to 19 are respectively: 92, -30, -205, -269, 235, -299, 40, 56, -87, -103, -270, 270, -258, and 78;

[0149] The ending values of α of line segments 1 to 3, 5 to 9, 11, 13, 15, 17 to 19 are respectively: 155, -210, -269, -305, 241, -140, 56, 91, -90, -257, -273, 282, -102, and 90;

[0150] The y1 values of line segments 4, 10, 12, 14, 16, and 20 are respectively: 18, 0, -1, 19, 18, and 0.

[0151] The values of the center coordinates x0 and y0, the value of the radius R, the starting value α1 and the ending value α2 of the range of the independent variable α, and the rotation direction of each curve segment trajectory function are shown in Table 3 below. At the same time, considering the process error, the values of the center coordinates and the radius of each of the above curve segments can be within the range of ±5 μm of the values in Table 3, and the starting value α1 and the ending value α2 of the range of the independent variable α can be within the range of ±2° of the values in Table 3.

[0152] Table 3

[0153]

[0154]

[0155] The value of the constant y1 of each straight line segment trajectory function, the starting value x0 and the ending value x1 of the range of the independent variable x are shown in Table 4 below. At the same time, considering the process error, the values of the constant y1, the starting value x0, and the ending value x1 of each of the above straight line segment trajectory functions can be within the range of ±5 μm of the values in Table 4.

[0156] Through experimental verification, using the above parameter values for the current blocking layer can change the current diffusion range, make the current distribution more uniform, reduce power loss, improve efficiency, and increase the brightness of the light-emitting diode.

[0157] Table 4

[0158]

[0159] See Figure 5 As shown in, the first sub-electrode 1051 and the second sub-electrode 1052 of the first electrode 105 include line segments 1 to 14 that are interconnected; the second sub-electrode 1052 includes line segments 15 to 19 that are interconnected; the third sub-electrode 1053 and the first sub-electrode 1051 are axisymmetric figures;

[0160] Among them, line segments 1, 2, 3, 5, 6, 7, 8, �, 11, 12, 13, 14, 16, 18, and 19 are curves; line segments 4, 10, 15, and 17 are straight lines;

[0161] The values of x0 of the line segments 1 to 3, the line segments 5 to 9, the line segments 11 to 14, the line segment 16, and the line segments 18 to 19 are respectively: 40, 3, 270, 983, 1282, 1280, 1272, 981, 270, 55, 40, 96, 141, 1043, and 1047;

[0162] The y0 values of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: 0, 47, -52, -301, 123, 116, 115, -304, -51, 58, 0, 22, -498, 6, and 0;

[0163] The R values of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: 40, 20, 264, 514, 5, 2, 5, 515, 262, 20, 40, 20, 500, 5, and 2;

[0164] The starting values of α of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: -180, 308, -200, -269, 239, -287, 12, 55, 92, 153, -284, 201, -270, 270, and -237;

[0165] The ending values of α of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: -232, 340, -269, -305, 181, -168, 55, 91, 153, 256, -339, 270, -273, 303, and -360;

[0166] The y0 values of the line segments 4, 10, 12, 15, and 17 are respectively: 213, 211, 2, and 1.

[0167] The x0 and y0 values of the center coordinates of the trajectory function of each curve segment, the size of the radius R, the starting value α1 and the ending value α2 of the value range of the independent variable α, and the rotation direction of the curve segment are shown in Table 7 below. At the same time, considering the process error, the center coordinates and radius values of each of the above curve segments can be within the range of ±5 μm of the values in Table 5, and the starting value α1 and the ending value α2 of the value range of the independent variable α can be within the range of ±2° of the values in Table 5.

[0168] Table 5

[0169]

[0170] For each linear segment trajectory function, the value of the constant y0 and the range of the independent variable x are the starting value x1 and the ending value x2, as shown in Table 6 below. At the same time, considering process errors, the values of the constant y1, the starting value x1, and the ending value x2 of each of the above linear segment trajectory functions can be within ±5μm of the values in Table 6.

[0171] Table 6

[0172]

[0173] See Figure 5 , the fourth sub-electrode 1061 and the fifth sub-electrode 1062 of the second electrode 106 include line segments 1 to 14 that are interconnected; the fifth sub-electrode 1062 and the fourth sub-electrode 1061 are axisymmetric figures;

[0174] Among them, line segments 1, 2, 3, 4, 6, 7, 8, 10, 11, 12, and 14 are curves; line segments 5, 9, and 13 are straight lines;

[0175] The x0 values of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: 40, -8, -162, -158, -920, -925, -920, -150, -148, 33, and 40;

[0176] The y0 values of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: 0, 36, -176, -183, 100, 106, 113, -147, -153, 60, 0;

[0177] The R values of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: 40, 20, 283, 288, 5, 3, 5, 254, 259, 20, and 40;

[0178] The starting values of α for line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: -180, 323, 54, 74, 90, -55, 235, -270, -285, 230, and -270;

[0179] The ending values of α for line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: -217, 54, 73, 88, 125, -305, 270, -286, -310, 270, and -360;

[0180] The y0 values of line segments 5, 9, and 13 are respectively: 105, 108, and 40.

[0181] The values of the center coordinates x0 and y0, the size of the radius R, the starting value α1 and the ending value α2 of the range of the independent variable α, and the rotation direction of each curve segment trajectory function are shown in Table 7 below. At the same time, considering the process error, the values of the center coordinates and the radius of each of the above curve segments can be within the range of ±5 μm of the values in Table 7, and the starting value α1 and the ending value α2 of the range of the independent variable α are within the range of ±2° of the values in Table 7.

[0182] Table 7

[0183]

[0184] The value of the constant y0 of each straight line segment trajectory function and the range of the independent variable x with the starting value x1 and the ending value x2 are shown in Table 8 below. At the same time, considering the process error, the values of the constant y1, the starting value x1, and the ending value x2 of each of the above straight line segment trajectory functions can be within the range of ±5 μm of the values in Table 8.

[0185] Through experimental verification, using the above parameters for the first electrode and the second electrode can avoid current concentration in the electrode area causing leakage, improve the efficiency of the light-emitting diode, and enhance the brightness of the light-emitting diode.

[0186] Table 8

[0187] Line Segment Number y1 (μm) x1 (μm) x2 (μm) 5 105 -149 -920 9 108 -920 -149 13 40 33 40

[0188] See Figure 6 . The passivation layer 104 includes 5 groups of through holes 301. Among them, the 5 groups of through holes form 7 opening structures as shown in the figure (respectively 1 to 7 in the figure, called the first to seventh opening structures). The first opening structure is the structure surrounded by line segment 3 to line segment 11 of the first strip-shaped groove 1011 of the epitaxial structure 101; the second opening structure is the axisymmetric figure of the first opening structure; the third opening structure is the structure surrounded by line segment 1 to 2 and line segment 12 to 14; the fifth opening structure is the structure surrounded by line segment 1 to line segment 10 of the current blocking layer 102; the fourth opening structure is the axisymmetric figure of the fifth opening structure; the sixth opening structure is the graphic structure surrounded by line segment 11 to line segment 20 of the current blocking layer 102; the seventh opening structure is the area structure of the first electrode 105.

[0189] Through experimental verification, using the above area for the passivation layer can make the current diffusion more uniform, improve the optoelectronic efficiency, and enhance the brightness of the light-emitting diode.

[0190] The openings in the first, second, fourth, fifth, and sixth opening structures are diamond-shaped; the distance between openings in the first, second, fourth, fifth, and sixth opening structures is 15 μm. The openings in the third and seventh opening structures are single circular.

[0191] In the embodiment of the present disclosure, the epitaxial structure 101 includes a first semiconductor layer 201 , an active layer 202 and a second semiconductor layer 203 .

[0192] In the embodiment of the present disclosure, the first semiconductor layer 201 may be an N-type semiconductor layer, and the second semiconductor layer 203 may be a P-type semiconductor layer.

[0193] In the embodiment of the present disclosure, the active layer 202 may be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well layer.

[0194] For example, the first semiconductor layer 201 may be an N-type GaN layer, and the second semiconductor layer 203 may be a P-type GaN layer.

[0195] In other embodiments, the first semiconductor layer 201 may be a P-type semiconductor layer, and the second semiconductor layer 203 may be an N-type semiconductor layer.

[0196] In the embodiment of the present disclosure, the current blocking layer 102 may be an AlGaN layer or a SiO 2 layer.

[0197] Exemplarily, the current blocking layer 102 is a SiO 2 layer.

[0198] In the embodiment of the present disclosure, the thickness of the current blocking layer 102 may be 0.1-1 μm.

[0199] Exemplarily, the thickness of the current blocking layer 102 is 0.5 μm.

[0200] In the embodiment of the present disclosure, the transparent conductive layer 103 may be an indium tin oxide (ITO) layer. ITO has excellent transparency and conductivity, and can conduct current while allowing light to pass through to form an electrical connection.

[0201] In the embodiment of the present disclosure, the thickness of the transparent conductive layer 103 may be 0.01-0.5 μm.

[0202] Exemplarily, the thickness of the transparent conductive layer 103 is 0.3 μm.

[0203] In the embodiment of the present disclosure, the passivation layer 104 may be a SiOx layer.

[0204] For example, x may be 2.

[0205] In an embodiment of the present disclosure, the thickness of the passivation layer 104 may be 0.1 to 1 μm.

[0206] Exemplarily, the thickness of the passivation layer 104 is 0.5 μm.

[0207] In an embodiment of the present disclosure, the first electrode 105 and the second electrode 106 may be Cr / Al / Ti / Ni / Pt / Au electrodes.

[0208] In an embodiment of the present disclosure, the thickness of the first electrode 105 and the second electrode 106 may be 2 to 4 μm.

[0209] Exemplarily, the thickness of the first electrode 105 and the second electrode 106 is 3 μm.

[0210] Referring again to Figure 1 , the light-emitting diode may further include a substrate 100 and a Distributed Bragg Reflector (DBR) layer 107, and the DBR layer 107 is on a side of the substrate 100 away from the epitaxial structure 101.

[0211] In an embodiment of the present disclosure, the substrate 100 may be a sapphire substrate or an Al2O3 substrate, and the present disclosure does not limit the material of the substrate 100.

[0212] Exemplarily, the substrate 100 is an Al2O3 substrate.

[0213] In an embodiment of the present disclosure, the thickness of the substrate 100 may be 50 to 1000 μm.

[0214] Exemplarily, the thickness of the substrate 100 is 500 μm.

[0215] In an embodiment of the present disclosure, the DBR layer 107 is a stack formed by SiO2 and Ti3O5.

[0216] Figure 7 is a schematic structural diagram of a light-emitting diode provided by an embodiment of the present disclosure, Figure 7 and Figure 1 The difference is that Figure 1 is Figure 2 a cross-sectional view taken along A-A' in Figure 7 is Figure 2 a cross-sectional view taken along B-B' in

[0217] It should be noted that in an embodiment of the present disclosure, structures may be selectively added or reduced based on the structure of the above light-emitting diode, and the present disclosure does not limit this.

[0218] Figure 8It is a flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 8 , the method steps include:

[0219] S11. Fabricate an epitaxial structure, the epitaxial structure having a first strip-shaped groove and a second strip-shaped groove connected at one end.

[0220] S12. Fabricate a current blocking layer, the current blocking layer in the area of the epitaxial structure where no groove is opened, the current blocking layer including a first blocking structure, a second blocking structure, and a third blocking structure.

[0221] S13. Fabricate a transparent conductive layer, the transparent conductive layer being laminated in the area of the epitaxial structure where no groove is opened.

[0222] S14. Fabricate a passivation layer, the passivation layer covering the transparent conductive layer, the first strip-shaped groove, and the second strip-shaped groove.

[0223] S15. Fabricate a first electrode and a second electrode, the first electrode and the second electrode being located on the surface of the passivation layer; the first electrode includes a first sub-electrode, a second sub-electrode, and a third sub-electrode connected at one end, the second electrode including a fourth sub-electrode and a fifth sub-electrode connected at one end; the first blocking structure, the second blocking structure, and the third blocking structure are respectively located between the first sub-electrode, the second sub-electrode, the third sub-electrode, and the epitaxial structure; the fourth sub-electrode and the fifth sub-electrode are respectively located in the first strip-shaped groove and the second strip-shaped groove; the first sub-electrode, the second sub-electrode, and the third sub-electrode are respectively electrically connected to the transparent conductive layer through a set of through holes in the passivation layer, the fourth sub-electrode and the fifth sub-electrode are respectively electrically connected to the epitaxial structure through a set of through holes in the passivation layer, the set of through holes including a plurality of through holes arranged at intervals; the first sub-electrode, the second sub-electrode, the third sub-electrode, the fourth sub-electrode, and the fifth sub-electrode are all strip-shaped structures that gradually taper from the end to the middle.

[0224] In an embodiment of the present disclosure, the epitaxial structure has a first strip-shaped groove and a second strip-shaped groove connected at one end. The current blocking layer and the transparent conductive layer are sequentially stacked on the area of the epitaxial structure where no groove is opened. The passivation layer covers the transparent conductive layer, the first strip-shaped groove, and the second strip-shaped groove. The current blocking layer includes a first blocking structure, a second blocking structure, and a third blocking structure. The multiple blocking structures can change the current flow direction and avoid current aggregation. Using this structure can further improve the current distribution. The first electrode and the second electrode are located on the surface of the passivation layer. The first electrode includes a first sub-electrode, a second sub-electrode, and a third sub-electrode connected at one end. The second electrode includes a fourth sub-electrode and a fifth sub-electrode connected at one end. Each sub-electrode is a strip-shaped structure that gradually tapers from the end to the middle, and each sub-electrode is connected to the epitaxy through a group of through holes. By using the above groove, blocking layer, and electrode structures, the current distribution uniformity can be improved, and the light efficiency of the light-emitting diode can be increased. Through experimental comparison and verification, the light intensity and light power efficiency of the light-emitting diode provided by the embodiment of the present disclosure are increased by about 2% compared with the light-emitting diode chip provided by the related technology.

[0225] Figure 9 is a flowchart of another method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 9 The method steps include:

[0226] S21. Form a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute an epitaxial structure.

[0227] In an embodiment of the present disclosure, the substrate can be a sapphire substrate, and the present disclosure does not limit the material of the substrate.

[0228] In an embodiment of the present disclosure, the thickness of the substrate can be 50 - 1000 μm.

[0229] Exemplarily, the thickness of the substrate is 500 μm.

[0230] In an embodiment of the present disclosure, the first semiconductor layer can be an N-type semiconductor layer, and the second semiconductor layer can be a P-type semiconductor layer.

[0231] In an embodiment of the present disclosure, the active layer can be a multi-quantum well layer.

[0232] For example, the first semiconductor layer can be an N-type GaN layer, and the second semiconductor layer can be a P-type GaN layer.

[0233] In other embodiments, the first semiconductor layer can be a P-type semiconductor layer, and the second semiconductor layer can be an N-type semiconductor layer.

[0234] S22. Pattern the epitaxial structure to form a first strip-shaped groove and a second strip-shaped groove connected at one end.

[0235] In one example, step S22 includes:

[0236] In the embodiments of the present disclosure, an inductively coupled plasma (ICP) etching technique is used to pattern a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence to form a first strip-shaped groove and a second strip-shaped groove connected at one end.

[0237] In the embodiments of the present disclosure, the first strip-shaped groove of the epitaxial structure includes line segments 1 to 14 connected to each other; the second strip-shaped groove and the first strip-shaped groove are axisymmetric figures;

[0238] Among them, line segments 1, 2, 3, 4, 6, 7, 8, 10, 11, 12, and 14 are curves; line segments 5, 9, and 13 are straight lines;

[0239] The x0 values of line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: 50, 4, -167, -142, -904, -916, -9,02, -146, -138, 39, and 50;

[0240] The y0 values of line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: 0, 37, -171, -156, 48, 107, 166, -174, -152, 60, and 0;

[0241] The R values of line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: 50, 10, 275, 253, 50, 11, 50, 290, ^{-}267, 10, and 50;

[0242] The starting values of α of line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: -180, -34, 51, 51, 90, -78, 275, -272, 75, 230, and -90;

[0243] The ending values of α of line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: -219, 60, 70, 70, 102, -282, 270, -285, 50, 270, and 0;

[0244] The y1 values of line segments 5, 9, and 13 are respectively: 98, 116, and 51.

[0245] For each of the above line segments, x0, y0, y1, and R are within ±5 of the above values, and the starting value and the ending value of the value range of α are within ±2 of the above values.

[0246] By taking values for the first strip-shaped groove and the second strip-shaped groove in the above manner, the current distribution of the epitaxial structure can be improved, the current utilization rate of the epitaxial structure can be enhanced, and thus the light-emitting efficiency of the light-emitting diode can be increased.

[0247] S23. Fabricate a current blocking layer, where the current blocking layer is in the area of the epitaxial structure without grooves, and the current blocking layer includes a first blocking structure, a second blocking structure, and a third blocking structure.

[0248] In one example, step S23 includes:

[0249] First step, deposit a current blocking thin film.

[0250] In the embodiments of the present disclosure, the current blocking thin film is fabricated by plasma enhanced chemical vapor deposition (PECVD) under the condition that the temperature is 100 - 500°C.

[0251] Exemplarily, the current blocking thin film is fabricated by PECVD under the condition that the temperature is 300°C.

[0252] In the embodiments of the present disclosure, the current blocking thin film can be an AlGaN or SiO2 layer.

[0253] Exemplarily, the current blocking thin film is a SiO2 current blocking layer.

[0254] Second step, etch the current blocking thin film.

[0255] In the embodiments of the present disclosure, the ICP etching technique is used to etch the current blocking thin film to form a first blocking structure, a second blocking structure, and a third blocking structure. The third blocking structure and the first blocking structure are axisymmetric figures;

[0256] In the embodiments of the present disclosure, the first blocking structure and the second blocking structure of the current blocking layer include line segments 1 to 20 connected to each other;

[0257] Among them, line segments 1, 2, 3, 5, 6, 7, 8, 9, 11, 13, 15, 17, 18, and 19 are curves; line segments 4, 10, 12, 14, 16, and 20 are straight lines;

[0258] The x0 values of Line Segment 1 to Line Segment 3, Line Segment 5 to Line Segment 9, Line Segment 11, Line Segment 13, Line Segment 15, and Line Segment 17 to Line Segment 19 are respectively: 7, -231, 6, 720, 1044, 1017, 973, 718, -30, -70, -30, 865, 876, and 865;

[0259] The y0 values of Line Segment 1 to Line Segment 3, Line Segment 5 to Line Segment 9, Line Segment 11, Line Segment 13, Line Segment 15, and Line Segment 17 to Line Segment 19 are respectively: -253, -142, -253, -504, -37, -87, -123, -507, 9, -489, 64, 9, and -46;

[0260] The R values of Line Segment 1 to Line Segment 3, Line Segment 5 to Line Segment 9, Line Segment 11, Line Segment 13, Line Segment 15, and Line Segment 17 to Line Segment 19 are respectively: 253, 10, 273, 523, 46, 11, 46, 507, 508, 11, 508, 46, 11, and 46;

[0261] The starting values of α of Line Segment 1 to Line Segment 3, Line Segment 5 to Line Segment 9, Line Segment 11, Line Segment 13, Line Segment 15, and Line Segment 17 to Line Segment 19 are respectively: 92, -30, -205, -269, 235, -299, 40, 56, -87, -103, -270, 270, -258, and 78;

[0262] The ending values of α of Line Segment 1 to Line Segment 3, Line Segment 5 to Line Segment 9, Line Segment 11, Line Segment 13, Line Segment 15, and Line Segment 17 to Line Segment 19 are respectively: 155, -210, -269, -305, 241, -140, 56, 91, -90, -257, -273, 282, -102, and 90;

[0263] The y1 values of Line Segment 4, Line Segment 10, Line Segment 12, Line Segment 14, Line Segment 16, and Line Segment 20 are respectively: 18, 0, -1, 19, 18, and 0.

[0264] For each of the above line segments, x0, y0, y1, and R are within ±5 of the said values, and the starting value and the ending value of the range of the α value are within ±2 of the said values.

[0265] Through experimental verification, using the above parameter values for the current blocking layer can change the current diffusion range, make the current distribution more uniform, reduce power loss, improve efficiency, and increase the brightness of the light-emitting diode.

[0266] S24. Fabricate a transparent conductive layer, which is laminated on the area of the epitaxial structure where no groove is opened.

[0267] Step S24 may include:

[0268] In the first step, a layer of ITO thin film is sputtered.

[0269] In the embodiment of the present disclosure, an ITO thin film with a growth time of 1 to 3 h and a thickness of 0.01 to 0.5 μm can be grown by reactive plasma deposition (RPD).

[0270] Exemplarily, an ITO thin film with a growth time of 2 h and a thickness of 0.3 μm is used.

[0271] In the second step, a mask pattern is formed on the ITO thin film.

[0272] In the third step, under the shielding of the mask pattern, the ITO thin film is patterned to obtain a transparent conductive layer.

[0273] S25. A passivation layer is fabricated, and the passivation layer covers the transparent conductive layer, the first strip-shaped groove, and the second strip-shaped groove.

[0274] In the embodiment of the present disclosure, the passivation layer can be a SiOx layer.

[0275] Exemplarily, x can be 2.

[0276] In the embodiment of the present disclosure, the thickness of the passivation layer can be 0.1 to 1 μm.

[0277] Exemplarily, the thickness of the passivation layer is 0.5 μm.

[0278] In the embodiment of the present disclosure, the passivation layer includes 5 groups of through holes. Among them, the 5 groups of through holes form 7 opening structures as shown in Figure 6 (respectively 1 to 7 in the figure, referred to as the first to seventh opening structures). The first opening structure is the structure enclosed by line segment 3 to line segment 11 of the first strip-shaped groove of the epitaxial structure; the second opening structure is the axisymmetric figure of the first opening structure; the third opening structure is the structure enclosed by line segment 1 to 2 and line segment 12 to 14; the fifth opening structure is the structure enclosed by line segment 1 to line segment 10 of the current blocking layer; the fourth opening structure is the axisymmetric figure of the fifth opening structure; the sixth opening structure is the graphic structure enclosed by line segment 11 to line segment 20 of the current blocking layer; the seventh opening structure is the first electrode region structure.

[0279] Through experimental verification, using the above regions for the passivation layer can make the current diffusion more uniform, improve the optoelectronic efficiency, and enhance the brightness of the light-emitting diode.

[0280] The openings in the first, second, fourth, fifth, and sixth opening structures are diamond-shaped; the distance between openings in the first, second, fourth, fifth, and sixth opening structures is 15 μm. The openings in the third and seventh opening structures are single circular.

[0281] S26, manufacturing a first electrode and a second electrode.

[0282] In the embodiment of the present disclosure, the first electrode and the second electrode may be Cr / Al / Ti / Ni / Pt / Au electrodes.

[0283] In the embodiment of the present disclosure, the thickness of the first electrode and the second electrode may be 2-4 μm.

[0284] Exemplarily, the thickness of the first electrode and the second electrode is 3 μm.

[0285] In the embodiment of the present disclosure, the first electrode includes a first sub-electrode, a second sub-electrode, and a third sub-electrode connected at one end, the current blocking layer includes a first blocking structure, a second blocking structure, and a third blocking structure, and the second electrode includes a fourth sub-electrode and a fifth sub-electrode connected at one end;

[0286] The first blocking structure, the second blocking structure, and the third blocking structure are respectively located between the first sub-electrode, the second sub-electrode, the third sub-electrode, and the epitaxial structure; the fourth sub-electrode and the fifth sub-electrode are respectively located in the first strip-shaped groove and the second strip-shaped groove;

[0287] The first sub-electrode, the second sub-electrode, and the third sub-electrode are electrically connected to the transparent conductive layer through a group of through holes on the passivation layer, and the fourth sub-electrode and the fifth sub-electrode are electrically connected to the epitaxial structure through a group of through holes on the passivation layer, wherein the group of through holes includes a plurality of through holes arranged at intervals;

[0288] The first sub-electrode, the second sub-electrode, the third sub-electrode, the fourth sub-electrode and the fifth sub-electrode are all strip-shaped structures that gradually become thinner from the end to the middle.

[0289] In the embodiment of the present disclosure, the first sub-electrode of the first electrode includes interconnected line segments 1 to 14; the second sub-electrode includes interconnected line segments 15 to 19; the third sub-electrode and the first sub-electrode are axially symmetrical.

[0290] Among them, line segment 1, line segment 2, line segment 3, line segment 5, line segment 6, line segment 7, line segment 8, line segment 9, line segment 11, line segment 12, line segment 13, line segment 14, line segment 16, line segment 18 and line segment 19 are curves; line segment 4, line segment 10, line segment 15 and line segment 17 are straight lines;

[0291] The x0 values of Line Segments 1 to 3, Line Segments 5 to 9, Line Segments 11 to 14, Line Segment 16, and Line Segments 18 to 19 are respectively: 40, 3, 270, 983, 1282, 1280, 1272, 981, 270, 55, 40, 96, 141, 1043, and 1047;

[0292] The y0 values of Line Segments 1 to 3, Line Segments 5 to 9, Line Segment 11, Line Segment 13, Line Segment 15, and Line Segments 17 to 19 are respectively: 0, 47, -52, -301, 123, 116, 115, -304, -51, 58, 0, 22, -498, 6, and 0;

[0293] The R values of Line Segments 1 to 3, Line Segments 5 to 9, Line Segment 11, Line Segment 13, Line Segment 15, and Line Segments 17 to 19 are respectively: 40, 20, 264, 514, 5, 2, 5, 515, 262, 20, 40, 20, 500, 5, and 2;

[0294] The starting values of α of Line Segments 1 to 3, Line Segments 5 to 9, Line Segment 11, Line Segment 13, Line Segment 15, and Line Segments 17 to 19 are respectively: -180, 308, -200, -269, 239, -287, 12, 55, 92, 153, -284, 201, -270, 270, and -237;

[0295] The ending values of α of Line Segments 1 to 3, Line Segments 5 to 9, Line Segment 11, Line Segment 13, Line Segment 15, and Line Segments 17 to 19 are respectively: -232, 340, -269, -305, 181, -168, 55, 91, 153, 256, -339, 270, -273, 303, and -360;

[0296] The y1 values of Line Segments 4, 10, 12, 15, and 17 are respectively: 213, 211, 2, and 1.

[0297] In the embodiment of the present disclosure, the fourth sub - electrode and the fifth sub - electrode of the second electrode include Line Segments 1 to 14 which are connected to each other; the fifth sub - electrode and the fourth sub - electrode are axisymmetric figures;

[0298] Among them, Line Segments 1, 2, 3, 4, 6, 7, 8, 10, 11, 12, and 14 are curves; Line Segments 5, 9, and 13 are straight lines;

[0299] The x0 values of Line Segments 1 to 4, Line Segments 6 to 8, Line Segments 10 to 12, and Line Segment 14 are respectively: 40, -8, -162, -158, -920, -925, -920, -150, -148, 33, and 40;

[0300] The y0 values of Line Segment 1 to Line Segment 4, Line Segment 6 to Line Segment 8, Line Segment 10 to Line Segment 12, and Line Segment 14 are respectively: 0, 36, -176, -183, 100, 106, 113, -147, -153, 60, 0;

[0301] The R values of Line Segment 1 to Line Segment 4, Line Segment 6 to Line Segment 8, Line Segment 10 to Line Segment 12, and Line Segment 14 are respectively: 40, 20, 283, 288, 5, 3, 5, 254, 259, 20, and 40;

[0302] The starting values of α of Line Segment 1 to Line Segment 4, Line Segment 6 to Line Segment 8, Line Segment 10 to Line Segment 12, and Line Segment 14 are respectively: -180, 323, 54, 74, 90, -55, 235, -270, -285, 230, and -270;

[0303] The ending values of α of Line Segment 1 to Line Segment 4, Line Segment 6 to Line Segment 8, Line Segment 10 to Line Segment 12, and Line Segment 14 are respectively: -217, 54, 73, 88, 125, -305, 270, -286, -310, 270, and -360;

[0304] The y1 values of Line Segment 5, Line Segment 9, and Line Segment 13 are respectively: 105, 108, and 40.

[0305] For each of the above line segments, x0, y0, y1, and R are within ±5 of the said values, and the starting value and the ending value of the range of the α value are within ±2 of the said values.

[0306] Through experimental verification, using the above parameters for the first electrode and the second electrode can avoid current concentration in the electrode area causing leakage, improve the efficiency of the light-emitting diode, and enhance the brightness of the light-emitting diode.

[0307] Figure 10 It is a contrast diagram of the light intensity of a light-emitting diode chip provided by an embodiment of the present disclosure and a light-emitting diode chip provided by the related art. Figure 11 It is a contrast diagram of the light power efficiency of a light-emitting diode chip provided by an embodiment of the present disclosure and a light-emitting diode chip provided by the related art. Refer to Figure 10 and Figure 11 , the light intensity and the light power efficiency of the light-emitting diode provided by the embodiment of the present disclosure are both increased by 2% compared with the light-emitting diode chip provided by the related art.

[0308] The above are only optional embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included within the protection scope of the present disclosure.

Claims

1. A light emitting diode, characterized in that, The light-emitting diode includes: an epitaxial structure (101), a current blocking layer (102), a transparent conductive layer (103), a passivation layer (104), a first electrode (105), and a second electrode (106); The epitaxial structure (101) has a first strip-shaped groove (1011) and a second strip-shaped groove (1012) connected at one end. The current blocking layer (102) and the transparent conductive layer (103) are sequentially stacked on the region (1013) of the epitaxial structure (101) where no groove is opened. The passivation layer (104) covers the transparent conductive layer (103), the first strip-shaped groove (1011), and the second strip-shaped groove (1012). The first electrode (105) and the second electrode (106) are located on the surface of the passivation layer (104); The first electrode (105) includes a first sub-electrode (1051), a second sub-electrode (1052), and a third sub-electrode (1053) connected at one end. The current blocking layer (102) includes a first blocking structure (1021), a second blocking structure (1022), and a third blocking structure (1023). The second electrode (106) includes a fourth sub-electrode (1061) and a fifth sub-electrode (1062) connected at one end; The first blocking structure (1021), the second blocking structure (1022), and the third blocking structure (1023) are respectively located between the first sub-electrode (1051), the second sub-electrode (1052), the third sub-electrode (1053), and the epitaxial structure (101). The fourth sub-electrode (1061) and the fifth sub-electrode (1062) are respectively located in the first strip-shaped groove (1011) and the second strip-shaped groove (1012); The first sub-electrode (1051), the second sub-electrode (1052), and the third sub-electrode (1053) are respectively electrically connected to the transparent conductive layer (103) through a group of through holes (301) in the passivation layer (104). The fourth sub-electrode (1061) and the fifth sub-electrode (1062) are respectively electrically connected to the epitaxial structure (101) through the group of through holes (301) in the passivation layer (104). The group of through holes (301) includes a plurality of through holes (301) arranged at intervals; The first sub-electrode (1051), the second sub-electrode (1052), the third sub-electrode (1053), the fourth sub-electrode (1061), and the fifth sub-electrode (1062) are all strip-shaped structures that gradually taper from the end to the middle.

2. The light-emitting diode according to claim 1, wherein The edges of the patterns of the first strip-shaped groove (1011), the second strip-shaped groove (1012), the first blocking structure (1021), the second blocking structure (1022), the third blocking structure (1023), the first sub-electrode (1051), the second sub-electrode (1052), the third sub-electrode (1053), the fourth sub-electrode (1061), and the fifth sub-electrode (1062) on the plane of the surface of the epitaxial structure (101) all include multiple connected line segments, and the multiple line segments include straight lines and curves; Among them, the function of the curved line segment is: x = x0 + Rcosα; y = y0 + Rsinα; The function of the straight line segment is: y = y1; Among them, x represents the abscissa of the curved line segment, y represents the ordinate of the curved line segment or the straight line segment, x0 represents the abscissa of the center of the curved line segment, y0 represents the ordinate of the center of the curved line segment, y1 is a constant, R represents the radius of the curved line segment, with the unit of μm; α is the independent variable, with the unit of degree.

3. The light-emitting diode according to claim 2, characterized in that, The first strip-shaped groove (1011) of the epitaxial structure (101) includes line segments 1 to 14 connected to each other; the second strip-shaped groove (1012) and the first strip-shaped groove (1011) are axisymmetric figures; Among them, line segments 1, 2, 3, 4, 6, 7, 8, 10, 11, 12, and 14 are curves; line segments 5, 9, and 13 are straight lines; The values of x0 for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: 50, 4, -167, -142, -904, -916, -902, -146, -138, 39, and 50; The values of y0 for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: 0, 37, -171, -156, 48, 107, 166, -174, -152, 60, and 0; The values of R for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: 50, 10, 275, 253, 50, 11, 50, 290, 267, 10, and 50; The starting values of α for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: -180, -34, 51, 51, 90, -78, 275, -272, 75, 230, and -90; The ending values of α for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: -219, 60, 70, 70, 102, -282, 270, -285, 50, 270, and 0; The values of y1 for line segments 5, 9, and 13 are respectively: 98, 116, and 51; For each of the above line segments, x0, y0, y1, and R are within ±5 of the above values, and the starting value and the ending value of the range of values of α are within ±2 of the above values.

4. The light emitting diode according to claim 2, wherein The first blocking structure (1021) of the current blocking layer (102) includes line segments 1 to 10 connected to each other; the second blocking structure (1022) includes line segments 11 to 20 connected to each other; the third blocking structure (1023) and the first blocking structure (1021) are axisymmetric figures; Among them, line segments 1, 2, 3, 5, 6, 7, 8, 9, 11, 13, 15, 17, 18, and 19 are curves; line segments 4, 10, 12, 14, 16, and 20 are straight lines; The values of x0 of line segments 1 to 3, line segments 5 to 9, line segment 11, line segment 13, line segment 15, line segments 17 to 19 are respectively: 7, -231, 6, 720, 1044, 1017, 973, 718, -30, -70, -30, 865, 876, and 865; The values of y0 of line segments 1 to 3, line segments 5 to 9, line segment 11, line segment 13, line segment 15, line segments 17 to 19 are respectively: -253, -142, -253, -504, -37, -87, -123, -507, 9, -489, 64, 9, and -46; The values of R of line segments 1 to 3, line segments 5 to 9, line segment 11, line segment 13, line segment 15, line segments 17 to 19 are respectively: 253, 10, 273, 523, 46, 11, 46, 507, 508, 11, 508, 46, 11, and 46; The starting values of α of line segments 1 to 3, line segments 5 to 9, line segment 11, line segment 13, line segment 15, line segments 17 to 19 are respectively: 92, -30, -205, -269, 235, -299, 40, 56, -87, -103, -270, 270, -258, and 78; The ending values of α of line segments 1 to 3, line segments 5 to 9, line segment 11, line segment 13, line segment 15, line segments 17 to 19 are respectively: 155, -210, -269, -305, 241, -140, 56, 91, -90, -257, -273, 282, -102, and 90; The values of y1 of line segments 4, 10, 12, 14, 16, and 20 are respectively: 18, 0, -1, 19, 18, and 0; For each of the above line segments, x0, y0, y1, and R are within ±5 of the specified values, and the starting and ending values of the range of α are within ±2 of the specified values.

5. The light-emitting diode according to claim 2, wherein The first sub-electrode (1051) of the first electrode (105) includes line segments 1 to 14 connected to each other; the second sub-electrode (1052) includes line segments 15 to 19 connected to each other; the third sub-electrode (1053) and the first sub-electrode (1051) are axisymmetric figures; Among them, line segments 1, 2, 3, 5, 6, 7, 8, 9, 11, 12, 13, 14, 16, 18, and 19 are curves; line segments 4, 10, 15, and 17 are straight lines; The values of x0 for line segments 1 to 3, line segments 5 to 9, line segments 11 to 14, line segment 16, and line segments 18 to 19 are respectively: 40, 3, 270, 983, 1282, 1280, 1272, 981, 270, 55, 40, 96, 141, 1043, and 1047; The values of y0 for line segments 1 to 3, line segments 5 to 9, line segment 11, line segment 13, line segment 15, and line segments 17 to 19 are respectively: 0, 47, -52, -301, 123, 116, 115, -304, -51, 58, 0, 22, -498, 6, and 0; The values of R for line segments 1 to 3, line segments 5 to 9, line segment 11, line segment 13, line segment 15, and line segments 17 to 19 are respectively: 40, 20, 264, 514, 5, 2, 5, 515, 262, 20, 40, 20, 500, 5, and 2; The starting values of α for line segments 1 to 3, line segments 5 to 9, line segment 11, line segment 13, line segment 15, and line segments 17 to 19 are respectively: -180, 308, -200, -269, 239, -287, 12, 55, 92, 153, -284, 201, -270, 270, and -237; The ending values of α for line segments 1 to 3, line segments 5 to 9, line segment 11, line segment 13, line segment 15, and line segments 17 to 19 are respectively: -232, 340, -269, -305, 181, -168, 55, 91, 153, 256, -339, 270, -273, 303, and -360; The values of y1 for line segments 4, 10, 12, 15, and 17 are respectively: 213, 211, 2, and 1; For each of the above line segments, x0, y0, y1, and R are within ±5 of the specified values, and the starting and ending values of the range of α are within ±2 of the specified values.

6. The light-emitting diode according to claim 2, wherein The fourth sub - electrode (1061) of the second electrode (106) includes line segments 1 to 14 connected to each other; the fifth sub - electrode (1062) and the fourth sub - electrode (1061) are axisymmetric figures; Among them, line segments 1, 2, 3, 4, 6, 7, 8, 10, 11, 12, and 14 are curves; line segments 5, 9, and 13 are straight lines; The x0 values of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: 40, - 8, - 162, - 158, - 920, - 925, - 920, - 150, - 148, 33, and 40; The y0 values of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: 0, 36, - 176, - 183, 100, 106, 113, - 147, - 153, 60, and 0; The R values of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: 40, 20, 283, 288, 5, 3, 5, 254, 259, 20, and 40; The starting values of α of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: - 180, 323, 54, 74, 90, - 55, 235, - 270, - 285, 230, and - 270; The ending values of α of line segments 1 to 4, line segments 6 to 8, line segments 10 to 12, and line segment 14 are respectively: - 217, 54, 73, 88, 125, - 305, 270, - 286, - 310, 270, and - 360; The y1 values of line segments 5, 9, and 13 are respectively: 105, 108, and 40; For each of the above - mentioned line segments, x0, y0, y1, and R are within ±5 of the values, and the starting value and the ending value of the value range of α are within ±2 of the values.

7. A method for preparing a light-emitting diode, characterized in that, The method includes: Fabricating an epitaxial structure, the epitaxial structure having a first strip - shaped groove and a second strip - shaped groove connected at one end; Fabricating a current blocking layer, the current blocking layer in the area of the epitaxial structure where no groove is opened, the current blocking layer including a first blocking structure, a second blocking structure, and a third blocking structure; Fabricating a transparent conductive layer, the transparent conductive layer laminated in the area of the epitaxial structure where no groove is opened; Fabricating a passivation layer, the passivation layer covering the transparent conductive layer, the first strip - shaped groove, and the second strip - shaped groove; Fabricate a first electrode and a second electrode, where the first electrode and the second electrode are located on the surface of the passivation layer; the first electrode includes a first sub - electrode, a second sub - electrode, and a third sub - electrode connected at one end, and the second electrode includes a fourth sub - electrode and a fifth sub - electrode connected at one end; the first blocking structure, the second blocking structure, and the third blocking structure are respectively located between the first sub - electrode, the second sub - electrode, the third sub - electrode and the epitaxial structure; the fourth sub - electrode and the fifth sub - electrode are respectively located in the first strip - shaped groove and the second strip - shaped groove; the first sub - electrode, the second sub - electrode, and the third sub - electrode are respectively electrically connected to the transparent conductive layer through a group of through - holes on the passivation layer, and the fourth sub - electrode and the fifth sub - electrode are respectively electrically connected to the epitaxial structure through a group of through - holes on the passivation layer, and the group of through - holes includes multiple through - holes arranged at intervals; the first sub - electrode, the second sub - electrode, the third sub - electrode, the fourth sub - electrode, and the fifth sub - electrode are all strip - shaped structures that gradually taper from the end to the middle.

8. The method for manufacturing a light - emitting diode according to claim 7, wherein the edges of the patterns of the first strip - shaped groove, the second strip - shaped groove, the first blocking structure, the second blocking structure, the third blocking structure, the first sub - electrode, the second sub - electrode, the third sub - electrode, the fourth sub - electrode, and the fifth sub - electrode on the plane where the surface of the epitaxial structure is located all include multiple connected line segments, and the multiple line segments include straight lines and curves; wherein, the function of the curved line segment is: x = x0 + Rcosα; y = y0 + Rsinα; the function of the straight line segment is: y = y1; wherein, x represents the abscissa of the curved line segment, y represents the ordinate of the curved line segment or the straight line segment, x0 represents the abscissa of the center of the curved line segment, y0 represents the ordinate of the center of the curved line segment, y1 is a constant, R represents the radius of the curved line segment, with the unit of μm; α is the independent variable, with the unit of degree.

9. The method for manufacturing a light - emitting diode according to claim 8, wherein the first strip - shaped groove pattern of the epitaxial structure includes line segments 1 to 14 connected to each other; the second strip - shaped groove is an axisymmetric figure with the first strip - shaped groove; wherein, line segments 1, 2, 3, 4, 6, 7, 8, 10, 11, 12, and 14 are curves; line segments 5, 9, and 13 are straight lines; the values of x0 for line segments 1 to 4, line segments 6 to 8, and line segments 10 to 14 are respectively: 50, 4, - 167, - 142, - 904, - 916, - 902, - 146, - 138, 39, and 50; The y0 values of the line segments 1 to 4, the line segments 6 to 8, and the line segments 10 to 14 are respectively: 0, 37, -171, -156, 48, 107, 166, -174, -152, 60, and 0; The R values of the line segments 1 to 4, the line segments 6 to 8, and the line segments 10 to 14 are respectively: 50, 10, 275, 253, 50, 11, 50, 290, 267, 10, and 50; The starting values of α of the line segments 1 to 4, the line segments 6 to 8, and the line segments 10 to 14 are respectively: -180, -34, 51, 51, 90, -78, 275, -272, 75, 230, and -90; The ending values of α of the line segments 1 to 4, the line segments 6 to 8, and the line segments 10 to 14 are respectively: -219, 60, 70, 70, 102, -282, 270, -285, 50, 270, and 0; The y0 values of the line segments 5, 9, and 13 are respectively: 98, 116, and 51; For each of the above line segments, x0, y0, y1, and R are within ±5 of the said values, and the starting value and the ending value of the value range of α are within ±2 of the said values.

10. The method for manufacturing a light-emitting diode according to claim 9, wherein The first blocking structure of the current blocking layer includes line segments 1 to 10 connected to each other; the second blocking structure includes line segments 11 to 20 connected to each other; the third blocking structure and the first blocking structure are axisymmetric figures; Among them, the line segments 1, 2, 3, 5, 6, 7, 8, 9, 11, 13, 15, 17, 18, and 19 are curves; the line segments 4, 10, 12, 14, 16, and 20 are straight lines; The x0 values of the line segments 1 to 3, the line segments 5 to 9, the line segments 11, 13, 15, 17 to 19 are respectively: 7, -231, 6, 720, 1044, 1017, 973, 718, -30, -70, -30, 865, 876, and 865; The y0 values of the line segments 1 to 3, the line segments 5 to 9, the line segments 11, 13, 15, 17 to 19 are respectively: -253, -142, -253, -504, -37, -87, -123, -507, 9, -489, 64, 9, and -46; The R values of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: 253, 10, 273, 523, 46, 11, 46, 507, 508, 11, 508, 46, 11, and 46; The starting values of α of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: 92, -30, -205, -269, 235, -299, 40, 56, -87, -103, -270, 270, -258, and 78; The ending values of α of the line segments 1 to 3, the line segments 5 to 9, the line segment 11, the line segment 13, the line segment 15, and the line segments 17 to 19 are respectively: 155, -210, -269, -305, 241, -140, 56, 91, -90, -257, -273, 282, -102, and 90; The y1 values of the line segments 4, 10, 12, 14, 16, and 20 are respectively: 18, 0, -1, 19, 18, and 0; For each of the above line segments, x0, y0, y1, and R are within the range of ±5 of the said values, and the starting value and the ending value of the value range of α are within the range of ±2 of the said values.

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