Selective deposition method of precursor material and related apparatus

Abstract

The present disclosure provides methods of selective deposition of precursor materials and related apparatuses. The method includes obtaining a structure. The structure includes a non-dielectric material and a dielectric material. The method includes contacting the structure with a molybdenum precursor under several conditions to obtain a molybdenum material on at least a portion of the non-dielectric material. The molybdenum material is not deposited on the dielectric material under the conditions.

Description

Technical Field

[0001] The present disclosure relates to a method for selectively depositing a precursor material and related apparatus. Background Art

[0002] The fabrication of semiconductor components involves material deposition. For surfaces that are not easily accessible via conventional deposition processes, material deposition fails or is non-uniform. Summary of the Invention

[0003] Some embodiments relate to a method. In some embodiments, the method includes obtaining a structure. In some embodiments, the structure includes a non-dielectric material. In some embodiments, the structure includes a dielectric material. In some embodiments, the method includes contacting the structure with a molybdenum precursor under certain conditions to obtain molybdenum material on at least a portion of the structure. In some embodiments, the molybdenum material is not deposited on the dielectric material under the conditions.

[0004] Some embodiments relate to a method. In some embodiments, the method includes obtaining a structure. In some embodiments, the structure includes polysilicon. In some embodiments, the structure includes a dielectric material. In some embodiments, the method includes contacting the structure with a molybdenum precursor under a first condition to obtain molybdenum silicide on the polysilicon. In some embodiments, the structure is contacted with the molybdenum precursor under a second condition to obtain molybdenum metal on the molybdenum silicide.

[0005] Some embodiments relate to a method. In some embodiments, the method includes obtaining a structure. In some embodiments, the structure includes a conductive material. In some embodiments, the structure includes a dielectric material. In some embodiments, the method includes contacting the structure with a molybdenum precursor under a first condition. In some embodiments, the molybdenum precursor removes molybdenum oxide from at least a portion of the conductive material under the first condition. In some embodiments, the method includes contacting the structure with the molybdenum precursor under a second condition. In some embodiments, the molybdenum precursor deposits molybdenum metal on at least a portion of the conductive material under the second condition. Brief Description of the Drawings

[0006] Some embodiments of the present disclosure are described herein with reference to the drawings and by way of example only. Referring now specifically to the figures in detail, it should be emphasized that the illustrated embodiments are by way of example and for purposes of illustrative discussion of the embodiments of the present disclosure. In this regard, the description made in conjunction with the figures enables those skilled in the art to understand how to practice the embodiments of the present disclosure.

[0007] Figure 1 is a flowchart of a method according to some embodiments.

[0008] Figure 2 is a schematic diagram of a device according to some embodiments.

[0009] Figure 3 is a graphical view of the relationship between molybdenum thickness measured by X-ray fluorescence (XRF) and deposition time according to some embodiments.

[0010] Figure 4 is a graphical view of the relationship between molybdenum thickness measured by X-ray fluorescence (XRF) and deposition time according to some embodiments.

[0011] Figure 5 is a cross-sectional SEM micrograph of a polysilicon sample coated with MoSix according to some embodiments.

[0012] Figure 6 is according to some embodiments graphical view of the SIMS depth profile of a thick coating.

[0013] Figure 7 is a graphical view of the relationship between molybdenum thin film thickness measured by X-ray fluorescence (XRF) and deposition time according to some embodiments.

[0014] Figure 8 is a graphical view of the relationship between molybdenum thickness measured by XRF and deposition time according to some embodiments.

[0015] Figure 9 is a cross-sectional SEM micrograph of a polysilicon sample coated with Mo / MoSix according to some embodiments.

[0016] Figure 10 is a graphical view of the SIMS depth profile of a polysilicon sample coated with Mo / MoSix according to some embodiments.

[0017] Figure 11 is a drawing of a substrate having an undeposited region to a deposited region. Detailed Description

[0018] Among the benefits and improvements already disclosed, other objects and advantages of the present disclosure will become apparent from the following description taken in conjunction with the accompanying drawings. Specific embodiments of the present disclosure are disclosed herein; however, it is to be understood that the disclosed embodiments merely illustrate the present disclosure which can be embodied in various forms. Additionally, each of the examples given with respect to the various embodiments of the present disclosure is intended to be illustrative and not restrictive.

[0019] Any prior patents and publications referenced herein are incorporated by reference in their entirety.

[0020] Throughout this specification and the claims, unless the context clearly dictates otherwise, the following terms have the meanings explicitly associated herein. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment(s), although they may. Additionally, as used herein, the phrases "in another embodiment" and "in some other embodiments" do not necessarily refer to different embodiments, although they may. All embodiments of the present disclosure are contemplated to be combinable without departing from the scope or spirit of the present disclosure.

[0021] As used herein, unless the context clearly dictates otherwise, the term "based on" is not exclusive and allows for additional factors not described. Additionally, throughout this specification, the meanings of "a," "an," and "the" include plural references. The meaning of "in" includes "in" and "on."

[0022] Figure 1 is a flowchart of method 100 according to some embodiments. As Figure 1 shown, in some embodiments, method 100 may include one or more of the following steps in any order: step 102 of obtaining a structure; step 104 of contacting the structure with a first precursor under a first condition; step 106 of contacting the structure with a second precursor under a second condition; step 108 of contacting the structure with a third precursor under a third condition; and step 110 of contacting the structure with a co-reactant precursor. In some embodiments, method 100 includes contacting the structure with a treatment liquid to remove surface oxides. In some embodiments, the treatment liquid includes diluted hydrofluoric acid.

[0023] At step 102, in some embodiments, method 100 includes obtaining a structure. The structure may include a non-dielectric material. In some embodiments, the non-dielectric material includes a semiconductor material. In some embodiments, the non-dielectric material includes a semiconductor layer. In some embodiments, the semiconductor layer is a single layer, a crystalline layer, or any combination thereof. In some embodiments, the non-dielectric material includes at least one of the following: silicon (Si), germanium (Ge), silicon germanium (SiGe), gallium arsenide (GaAs), indium antimonide (InSb), gallium phosphide (GaP), gallium antimonide (GaSb), indium aluminum arsenide (InAlAs), indium gallium arsenide (InGaAs), gallium antimonide phosphide (GaSbP), gallium arsenide antimonide (GaAsSb), indium phosphide (InP), or any combination thereof. In some embodiments, the non-dielectric material includes silicon. In some embodiments, the non-dielectric material includes polysilicon.

[0024] The structure may include a non - dielectric material. In some embodiments, the non - dielectric material is adjacent to the dielectric material. In some embodiments, the non - dielectric material is a non - dielectric layer. In some embodiments, the non - dielectric material is a non - dielectric feature. In some embodiments, the non - dielectric material is a non - dielectric structure. In some embodiments, the non - dielectric material is a non - dielectric spacer. In some embodiments, the non - dielectric material includes a semiconductor material. In some embodiments, the non - dielectric material includes a conductive material. In some embodiments, the non - dielectric material is polycrystalline. In some embodiments, the non - dielectric material is amorphous. In some embodiments, the non - dielectric material is an epitaxial semiconductor material. In some embodiments, the non - dielectric material includes molybdenum silicide. In some embodiments, the non - dielectric material includes a metal. In some embodiments, the non - dielectric material includes a metal nitride.

[0025] The structure may include a dielectric material. In some embodiments, the dielectric material is a dielectric layer. In some embodiments, the dielectric material is a dielectric feature. In some embodiments, the dielectric material is a dielectric structure. In some embodiments, the dielectric material is a dielectric spacer. In some embodiments, the dielectric material includes at least one of the following: HfO2, ZrO2, HfAlO x , HfSiO x , Al2O3, SiCN, SiOC, SiOCN or any combination thereof. In some embodiments, a chemical vapor deposition process, a plasma - enhanced chemical vapor deposition process, a physical vapor deposition process, an atomic layer deposition process, or any combination thereof is employed to obtain the dielectric material of the structure.

[0026] It will be appreciated that, without departing from the scope of the present disclosure, the structure may include one or more additional elements. Among other things, the structure may include all or a part of a semiconductor device or a semiconductor structure. Thus, among other things, the structure may comprise (by way of example and not limitation) at least one of the following: metal contacts, conductive nitrides (at least one of TiN, WN, TaN, NbN, MoN, or any combination thereof), or any combination thereof.

[0027] At step 104, in some embodiments, method 100 includes contacting the structure with a first precursor under a first condition. The step of contacting the structure with the first precursor under the first condition may be sufficient to obtain a first molybdenum material on at least a portion of the non-dielectric material. In some embodiments, the step of contacting the structure with the first precursor under the first condition may be sufficient to deposit the first molybdenum material on at least a portion of the non-dielectric material. In some embodiments, the step of contacting the structure with the first precursor under the first condition may be sufficient to form the first molybdenum material on at least a portion of the non-dielectric material. In some embodiments, at least a portion of the non-dielectric material is at least a portion of the surface of the non-dielectric material. In some embodiments, the first molybdenum material includes molybdenum metal. In some embodiments, the first molybdenum material includes elemental molybdenum or molybdenum in any oxidation state. In some embodiments, the first molybdenum material includes molybdenum silicide. In some embodiments, molybdenum silicide is represented by the chemical formula MoSix, where x is from 0.3 to 2. In some embodiments, x is 0.33. In some embodiments, x is 0.6. In some embodiments, x is 2. In some embodiments, molybdenum silicide is amorphous. In some embodiments, the amorphous form of molybdenum silicide includes any ratio of Mo / Si.

[0028] The step of contacting the structure with the first precursor under the first condition may exhibit selectivity for the non-dielectric material relative to the dielectric material. For example, in some embodiments, the first molybdenum material is not obtained on the dielectric material under the first condition. In some embodiments, the first molybdenum material is not deposited on the dielectric material under the first condition. In some embodiments, the first molybdenum material includes molybdenum metal. In some embodiments, the first molybdenum material includes elemental molybdenum or molybdenum in any oxidation state. In some embodiments, the first molybdenum material includes molybdenum silicide. In some embodiments, molybdenum silicide is represented by the chemical formula MoSix, where x is from 0.3 to 2. In some embodiments, x is 0.33. In some embodiments, x is 0.6. In some embodiments, x is 2. In some embodiments, molybdenum silicide is amorphous. In some embodiments, the amorphous form of molybdenum silicide includes any ratio of Mo / Si.

[0029] The first molybdenum material may be a reaction product of the first molybdenum precursor and another component. For example, in some embodiments, the first molybdenum material is a reaction product of the first molybdenum precursor and at least one co-reactant. In some embodiments, the co-reactant includes hydrogen (H2). In some embodiments, the co-reactant includes at least one of argon (Ar), helium (He), nitrogen (N2), or any combination thereof. In some embodiments, the molybdenum material is a reaction product of the first molybdenum precursor and the non-dielectric material. For example, in some embodiments, the molybdenum material includes molybdenum silicide. In some embodiments, molybdenum silicide is a reaction product of the first molybdenum precursor and the polysilicon of the non-dielectric material. In some embodiments, the first molybdenum material is not a reaction product.

[0030] The first molybdenum material may include molybdenum metal with high purity. In some embodiments, the molybdenum metal has a purity of at least 90%, at least 91%, at least 92%, at least 93%, at least 94%, at least 95%, at least 96%, at least 97%, at least 98%, at least 99%, at least 99.9%, at least 99.99%, at least 99.999% or at least 99.9999%. In some embodiments, the molybdenum metal has a purity of 90% to 100%.

[0031] The first condition may include at least one of a first temperature, a first pressure, a first flow rate, or any combination thereof. The first temperature may be a temperature in the range of 100°C to 600°C or any range or sub-range therebetween. In some embodiments, the first temperature is 100°C to 580°C, 100°C to 560°C, 100°C to 540°C, 100°C to 520°C, 100°C to 500°C, 100°C to 480°C, 100°C to 460°C, 100°C to 440°C, 100°C to 420°C, 100°C to 400°C, 100°C to 380°C, 100°C to 360°C, 100°C to 340°C, 100°C to 320°C, 100°C to 300°C, 100°C to 280°C, 100°C to 260°C, 100°C to 240°C, 100°C to 220°C, 100°C to 200°C, 100°C to 180°C, 100°C to 160°C, 100°C to 140°C or 100°C to 120°C. In some embodiments, the first temperature is a temperature in the range of 120°C to 600°C, 140°C to 600°C, 160°C to 600°C, 180°C to 600°C, 200°C to 600°C, 220°C to 600°C, 240°C to 600°C, 260°C to 600°C, 280°C to 600°C, 300°C to 600°C, 320°C to 600°C, 340°C to 600°C, 360°C to 600°C, 380°C to 600°C, 400°C to 600°C, 420°C to 600°C, 440°C to 600°C, 460°C to 600°C, 480°C to 600°C, 500°C to 600°C, 520°C to 600°C, 540°C to 600°C, 560°C to 600°C or 580°C to 600°C.

[0032] In some embodiments, the first temperature is 400 °C or a temperature less than 400 °C. In some embodiments, the first temperature is a temperature from 100 °C to 400 °C, from 100 °C to 380 °C, from 100 °C to 360 °C, from 100 °C to 340 °C, from 100 °C to 320 °C, from 100 °C to 300 °C, from 100 °C to 280 °C, from 100 °C to 260 °C, from 100 °C to 240 °C, from 100 °C to 220 °C, from 100 °C to 200 °C, from 100 °C to 180 °C, from 100 °C to 160 °C, from 100 °C to 140 °C, or from 100 °C to 120 °C. In some embodiments, the first temperature is a temperature from 120 °C to 400 °C, from 140 °C to 400 °C, from 160 °C to 400 °C, from 180 °C to 400 °C, from 200 °C to 400 °C, from 220 °C to 400 °C, from 240 °C to 400 °C, from 260 °C to 400 °C, from 280 °C to 400 °C, from 300 °C to 400 °C, from 320 °C to 400 °C, from 340 °C to 400 °C, from 360 °C to 400 °C, or from 380 °C to 400 °C.

[0033] In some embodiments, the first temperature is a temperature greater than 400 °C. In some embodiments, the first temperature is a temperature from 400 °C to 600 °C, from 400 °C to 580 °C, from 400 °C to 560 °C, from 400 °C to 540 °C, from 400 °C to 520 °C, from 400 °C to 500 °C, from 400 °C to 480 °C, from 400 °C to 460 °C, from 400 °C to 440 °C, or from 400 °C to 420 °C. In some embodiments, the first temperature is a temperature from 420 °C to 600 °C, from 440 °C to 600 °C, from 460 °C to 600 °C, from 480 °C to 600 °C, from 500 °C to 600 °C, from 520 °C to 600 °C, from 540 °C to 600 °C, from 560 °C to 600 °C, or from 580 °C to 600 °C.

[0034] The first pressure may include a pressure from 1 Torr to 100 Torr or any range or sub-range therebetween. In some embodiments, the first pressure is a pressure from 1 Torr to 90 Torr, from 1 Torr to 80 Torr, from 1 Torr to 70 Torr, from 1 Torr to 60 Torr, from 1 Torr to 50 Torr, from 1 Torr to 40 Torr, from 1 Torr to 30 Torr, from 1 Torr to 20 Torr, from 1 Torr to 10 Torr, or from 1 Torr to 5 Torr. In some embodiments, the first pressure is a pressure from 5 Torr to 100 Torr, from 10 Torr to 100 Torr, from 20 Torr to 100 Torr, from 30 Torr to 100 Torr, from 40 Torr to 100 Torr, from 50 Torr to 100 Torr, from 60 Torr to 100 Torr, from 70 Torr to 100 Torr, from 80 Torr to 100 Torr, or from 90 Torr to 100 Torr.

[0035] The first flow rate may include a flow rate in the range of 0.01 sccm to 10 sccm or any range or sub-range therebetween. In some embodiments, the first flow rate is a flow rate of 0.1 sccm to 10 sccm, 0.2 sccm to 10 sccm, 0.3 sccm to 10 sccm, 0.4 sccm to 10 sccm, 0.5 sccm to 10 sccm, 0.6 sccm to 10 sccm, 0.7 sccm to 10 sccm, 0.8 sccm to 10 sccm, 0.9 sccm to 10 sccm, 1 sccm to 10 sccm, 2 sccm to 10 sccm, 3 sccm to 10 sccm, 4 sccm to 10 sccm, 5 sccm to 10 sccm, 6 sccm to 10 sccm, 7 sccm to 10 sccm, 8 sccm to 10 sccm, or 9 sccm to 10 sccm. In some embodiments, the first flow rate is a flow rate of 0.01 sccm to 9 sccm, 0.01 sccm to 8 sccm, 0.01 sccm to 7 sccm, 0.01 sccm to 6 sccm, 0.01 sccm to 5 sccm, 0.01 sccm to 4 sccm, 0.01 sccm to 3 sccm, 0.01 sccm to 2 sccm, 0.01 sccm to 1 sccm, 0.01 sccm to 0.9 sccm, 0.01 sccm to 0.8 sccm, 0.01 sccm to 0.7 sccm, 0.01 sccm to 0.6 sccm, 0.01 sccm to 0.5 sccm, 0.01 sccm to 0.4 sccm, 0.01 sccm to 0.3 sccm, 0.01 sccm to 0.2 sccm, or 0.01 sccm to 0.1 sccm.

[0036] At step 106, in some embodiments, method 100 includes contacting the structure with a second precursor under a second condition. The step of contacting the structure with the second precursor under the second condition may be sufficient to obtain a second molybdenum material on at least a portion of the non-dielectric material. In some embodiments, the step of contacting the structure with the second precursor under the second condition may be sufficient to deposit the second molybdenum material on at least a portion of the non-dielectric material. In some embodiments, the step of contacting the structure with the second precursor under the second condition may be sufficient to form the second molybdenum material on at least a portion of the non-dielectric material. In some embodiments, the second molybdenum material includes molybdenum metal. In some embodiments, the second molybdenum material includes elemental molybdenum or molybdenum in any oxidation state. In some embodiments, the second molybdenum material includes molybdenum silicide. In some embodiments, the molybdenum silicide is represented by the chemical formula MoSix, where x is from 0.3 to 2. In some embodiments, x is 0.33. In some embodiments, x is 0.6. In some embodiments, x is 2. In some embodiments, the molybdenum silicide is amorphous. In some embodiments, the amorphous form of the molybdenum silicide includes any ratio of Mo / Si.

[0037] The step of contacting the structure with the second precursor under the second condition may be sufficient to obtain a second molybdenum material on at least a portion of the first molybdenum material. In some embodiments, the step of contacting the structure with the second precursor under the second condition may be sufficient to deposit the second molybdenum material on at least a portion of the first molybdenum material. In some embodiments, the step of contacting the structure with the second precursor under the second condition may be sufficient to form the second molybdenum material on at least a portion of the first molybdenum material. In some embodiments, at least a portion of the first molybdenum material is at least a portion of the surface of the first molybdenum material. In some embodiments, the second molybdenum material includes molybdenum metal. In some embodiments, the second molybdenum material includes elemental molybdenum or molybdenum in any oxidation state. In some embodiments, the second molybdenum material includes molybdenum silicide. In some embodiments, the molybdenum silicide is represented by the chemical formula MoSix, where x is from 0.3 to 2. In some embodiments, x is 0.33. In some embodiments, x is 0.6. In some embodiments, x is 2. In some embodiments, the molybdenum silicide is amorphous. In some embodiments, the amorphous form of the molybdenum silicide includes any ratio of Mo / Si.

[0038] The step of contacting the structure with a second precursor under a second condition can exhibit selectivity for a non-dielectric material relative to a dielectric material. The step of contacting the structure with a second precursor under a second condition can exhibit selectivity for a first molybdenum material relative to a dielectric material. For example, in some embodiments, no second molybdenum material is obtained on the dielectric material under the second condition. In some embodiments, the second molybdenum material is not deposited on the dielectric material under the second condition. In some embodiments, the second molybdenum material comprises molybdenum metal. In some embodiments, the second molybdenum material comprises elemental molybdenum or molybdenum in any oxidation state. In some embodiments, the second molybdenum material comprises molybdenum silicide. In some embodiments, the molybdenum silicide is represented by the chemical formula MoSix, where x is from 0.3 to 2. In some embodiments, x is 0.33. In some embodiments, x is 0.6. In some embodiments, x is 2. In some embodiments, the molybdenum silicide is amorphous. In some embodiments, the amorphous form of the molybdenum silicide includes any ratio of Mo / Si.

[0039] The second molybdenum material can be a reaction product of a second molybdenum precursor and another component. For example, in some embodiments, the molybdenum material is a reaction product of a second molybdenum precursor and at least one co-reactant. In some embodiments, the co-reactant includes hydrogen (H2). In some embodiments, the co-reactant includes at least one of argon (Ar), helium (He), nitrogen (N2), or any combination thereof. In some embodiments, the molybdenum material is a reaction product of a second molybdenum precursor and a non-dielectric material. For example, in some embodiments, the molybdenum material comprises molybdenum silicide. In some embodiments, the molybdenum silicide is a reaction product of a second molybdenum precursor and polysilicon of a non-dielectric material. In some embodiments, the second molybdenum material is not a reaction product.

[0040] The second molybdenum material can include molybdenum metal with high purity. In some embodiments, the molybdenum metal has a purity of at least 90%, at least 91%, at least 92%, at least 93%, at least 94%, at least 95%, at least 96%, at least 97%, at least 98%, at least 99%, at least 99.9%, at least 99.99%, at least 99.999%, or at least 99.9999%. In some embodiments, the molybdenum metal has a purity of 90% to 100%.

[0041] The second condition may include at least one of a second temperature, a second pressure, a second flow rate, or any combination thereof. The second temperature may be a temperature in the range of 100°C to 600°C or any range or sub-range therebetween. In some embodiments, the second temperature is a temperature in the range of 100°C to 580°C, 100°C to 560°C, 100°C to 540°C, 100°C to 520°C, 100°C to 500°C, 100°C to 480°C, 100°C to 460°C, 100°C to 440°C, 100°C to 420°C, 100°C to 400°C, 100°C to 380°C, 100°C to 360°C, 100°C to 340°C, 100°C to 320°C, 100°C to 300°C, 100°C to 280°C, 100°C to 260°C, 100°C to 240°C, 100°C to 220°C, 100°C to 200°C, 100°C to 180°C, 100°C to 160°C, 100°C to 140°C, or 100°C to 120°C. In some embodiments, the second temperature is a temperature in the range of 120°C to 600°C, 140°C to 600°C, 160°C to 600°C, 180°C to 600°C, 200°C to 600°C, 220°C to 600°C, 240°C to 600°C, 260°C to 600°C, 280°C to 600°C, 300°C to 600°C, 320°C to 600°C, 340°C to 600°C, 360°C to 600°C, 380°C to 600°C, 400°C to 600°C, 420°C to 600°C, 440°C to 600°C, 460°C to 600°C, 480°C to 600°C, 500°C to 600°C, 520°C to 600°C, 540°C to 600°C, 560°C to 600°C, or 580°C to 600°C.

[0042] In some embodiments, the second temperature is a temperature of 400°C or less. In some embodiments, the second temperature is a temperature in the range of 100°C to 400°C, 100°C to 380°C, 100°C to 360°C, 100°C to 340°C, 100°C to 320°C, 100°C to 300°C, 100°C to 280°C, 100°C to 260°C, 100°C to 240°C, 100°C to 220°C, 100°C to 200°C, 100°C to 180°C, 100°C to 160°C, 100°C to 140°C, or 100°C to 120°C. In some embodiments, the second temperature is a temperature in the range of 120°C to 400°C, 140°C to 400°C, 160°C to 400°C, 180°C to 400°C, 200°C to 400°C, 220°C to 400°C, 240°C to 400°C, 260°C to 400°C, 280°C to 400°C, 300°C to 400°C, 320°C to 400°C, 340°C to 400°C, 360°C to 400°C, or 380°C to 400°C.

[0043] In some embodiments, the second temperature is a temperature greater than 400 °C. In some embodiments, the second temperature is a temperature from 400 °C to 600 °C, from 400 °C to 580 °C, from 400 °C to 560 °C, from 400 °C to 540 °C, from 400 °C to 520 °C, from 400 °C to 500 °C, from 400 °C to 480 °C, from 400 °C to 460 °C, from 400 °C to 440 °C, or from 400 °C to 420 °C. In some embodiments, the second temperature is a temperature from 420 °C to 600 °C, from 440 °C to 600 °C, from 460 °C to 600 °C, from 480 °C to 600 °C, from 500 °C to 600 °C, from 520 °C to 600 °C, from 540 °C to 600 °C, from 560 °C to 600 °C, or from 580 °C to 600 °C.

[0044] In some embodiments, the second temperature is greater than the first temperature. In some embodiments, the second temperature is less than the first temperature.

[0045] The second pressure may include a pressure from 1 Torr to 100 Torr or any range or sub-range therebetween. In some embodiments, the second pressure is a pressure from 1 Torr to 90 Torr, from 1 Torr to 80 Torr, from 1 Torr to 70 Torr, from 1 Torr to 60 Torr, from 1 Torr to 50 Torr, from 1 Torr to 40 Torr, from 1 Torr to 30 Torr, from 1 Torr to 20 Torr, from 1 Torr to 10 Torr, or from 1 Torr to 5 Torr. In some embodiments, the second pressure is a pressure from 5 Torr to 100 Torr, from 10 Torr to 100 Torr, from 20 Torr to 100 Torr, from 30 Torr to 100 Torr, from 40 Torr to 100 Torr, from 50 Torr to 100 Torr, from 60 Torr to 100 Torr, from 70 Torr to 100 Torr, from 80 Torr to 100 Torr, or from 90 Torr to 100 Torr.

[0046] In some embodiments, the second pressure is greater than the first pressure. In some embodiments, the second pressure is less than the first pressure.

[0047] The second flow rate may include a flow rate in the range of 0.01 sccm to 10 sccm or any range or sub-range therebetween. In some embodiments, the second flow rate is a flow rate of 0.1 sccm to 10 sccm, 0.2 sccm to 10 sccm, 0.3 sccm to 10 sccm, 0.4 sccm to 10 sccm, 0.5 sccm to 10 sccm, 0.6 sccm to 10 sccm, 0.7 sccm to 10 sccm, 0.8 sccm to 10 sccm, 0.9 sccm to 10 sccm, 1 sccm to 10 sccm, 2 sccm to 10 sccm, 3 sccm to 10 sccm, 4 sccm to 10 sccm, 5 sccm to 10 sccm, 6 sccm to 10 sccm, 7 sccm to 10 sccm, 8 sccm to 10 sccm, or 9 sccm to 10 sccm. In some embodiments, the second flow rate is a flow rate of 0.01 sccm to 9 sccm, 0.01 sccm to 8 sccm, 0.01 sccm to 7 sccm, 0.01 sccm to 6 sccm, 0.01 sccm to 5 sccm, 0.01 sccm to 4 sccm, 0.01 sccm to 3 sccm, 0.01 sccm to 2 sccm, 0.01 sccm to 1 sccm, 0.01 sccm to 0.9 sccm, 0.01 sccm to 0.8 sccm, 0.01 sccm to 0.7 sccm, 0.01 sccm to 0.6 sccm, 0.01 sccm to 0.5 sccm, 0.01 sccm to 0.4 sccm, 0.01 sccm to 0.3 sccm, 0.01 sccm to 0.2 sccm, or 0.01 sccm to 0.1 sccm.

[0048] In some embodiments, the second flow rate is greater than the first flow rate. In some embodiments, the second flow rate is less than the first flow rate.

[0049] In some embodiments, the first condition is the same as the second condition, such that molybdenum silicide is obtained on polysilicon and molybdenum metal is obtained on the molybdenum silicide in a single step. In some embodiments, the first condition and the second condition have the same temperature. In some embodiments, the first condition and the second condition have the same pressure. In some embodiments, the first condition and the second condition have the same precursor flow rate. In some embodiments, the first condition and the second condition have the same co-reactant flow rate.

[0050] At step 108, in some embodiments, method 100 includes contacting the structure with a third precursor under a third condition. The step of contacting the structure with the third precursor under the third condition may be sufficient to remove at least a portion of the metal oxide on the non-dielectric material. In some embodiments, the step of contacting the structure with the third precursor under the third condition may be sufficient to etch at least a portion of the metal oxide on the non-dielectric material. In some embodiments, the step of contacting the structure with the third precursor under the third condition may be sufficient to degrade at least a portion of the metal oxide on the non-dielectric material. In some embodiments, the step of contacting the structure with the third precursor under the third condition may be sufficient to etch at least a portion of the metal oxide on the non-dielectric material.

[0051] The step of contacting the structure with the third precursor under the third condition may be sufficient to remove at least a portion of the metal oxide on the first molybdenum material. In some embodiments, the step of contacting the structure with the third precursor under the third condition may be sufficient to etch at least a portion of the metal oxide on the first molybdenum material. In some embodiments, the step of contacting the structure with the third precursor under the third condition may be sufficient to degrade at least a portion of the metal oxide on the first molybdenum material. In some embodiments, the step of contacting the structure with the third precursor under the third condition may be sufficient to etch at least a portion of the metal oxide on the first molybdenum material.

[0052] The step of contacting the structure with the third precursor under the third condition may be sufficient to remove at least a portion of the metal oxide on the second molybdenum material. In some embodiments, the step of contacting the structure with the third precursor under the third condition may be sufficient to etch at least a portion of the metal oxide on the second molybdenum material. In some embodiments, the step of contacting the structure with the third precursor under the third condition may be sufficient to degrade at least a portion of the metal oxide on the second molybdenum material. In some embodiments, the step of contacting the structure with the third precursor under the third condition may be sufficient to etch at least a portion of the metal oxide on the second molybdenum material.

[0053] The step of contacting the structure with a third precursor under a third condition may be sufficient to obtain a third molybdenum material on at least a portion of the non-dielectric material. In some embodiments, the step of contacting the structure with a third precursor under a third condition may be sufficient to deposit the third molybdenum material on at least a portion of the non-dielectric material. In some embodiments, the step of contacting the structure with a third precursor under a third condition may be sufficient to form a third molybdenum material on at least a portion of the non-dielectric material. In some embodiments, at least a portion of the non-dielectric material is at least a portion of the surface of the non-dielectric material. In some embodiments, the third molybdenum material includes molybdenum metal. In some embodiments, the third molybdenum material includes elemental molybdenum or molybdenum in any oxidation state. In some embodiments, the third molybdenum material includes molybdenum silicide. In some embodiments, the molybdenum silicide is represented by the chemical formula MoSix, where x is from 0.3 to 2. In some embodiments, x is 0.33. In some embodiments, x is 0.6. In some embodiments, x is 2. In some embodiments, the molybdenum silicide is amorphous. In some embodiments, the amorphous form of the molybdenum silicide includes any ratio of Mo / Si.

[0054] The step of contacting the structure with a third precursor under a third condition may be sufficient to obtain a third molybdenum material on at least a portion of the first molybdenum material. In some embodiments, the step of contacting the structure with a third precursor under a third condition may be sufficient to deposit the third molybdenum material on at least a portion of the first molybdenum material. In some embodiments, the step of contacting the structure with a third precursor under a third condition may be sufficient to form a third molybdenum material on at least a portion of the first molybdenum material. In some embodiments, the third molybdenum material includes molybdenum metal. In some embodiments, the third molybdenum material includes elemental molybdenum or molybdenum in any oxidation state. In some embodiments, the third molybdenum material includes molybdenum silicide. In some embodiments, the molybdenum silicide is represented by the chemical formula MoSix, where x is from 0.3 to 2. In some embodiments, x is 0.33. In some embodiments, x is 0.6. In some embodiments, x is 2. In some embodiments, the molybdenum silicide is amorphous. In some embodiments, the amorphous form of the molybdenum silicide includes any ratio of Mo / Si.

[0055] The step of contacting the structure with a third precursor under a third condition can exhibit selectivity for a non-dielectric material relative to a dielectric material. The step of contacting the structure with a third precursor under a third condition can exhibit selectivity for a first molybdenum material relative to a dielectric material. For example, in some embodiments, no third molybdenum material is obtained on the dielectric material under the third condition. In some embodiments, the third molybdenum material is not deposited on the dielectric material under the third condition. In some embodiments, the third molybdenum material includes molybdenum metal. In some embodiments, the third molybdenum material includes elemental molybdenum or molybdenum in any oxidation state. In some embodiments, the third molybdenum material includes molybdenum silicide. In some embodiments, molybdenum silicide is represented by the chemical formula MoSix, where x is from 0.3 to 2. In some embodiments, x is 0.33. In some embodiments, x is 0.6. In some embodiments, x is 2. In some embodiments, molybdenum silicide is amorphous. In some embodiments, the amorphous form of molybdenum silicide includes any ratio of Mo / Si.

[0056] The third molybdenum material can be a reaction product of a third molybdenum precursor and another component. For example, in some embodiments, the molybdenum material is a reaction product of a third molybdenum precursor and at least one co-reactant. In some embodiments, the co-reactant includes hydrogen (H2). In some embodiments, the co-reactant includes at least one of argon (Ar), helium (He), nitrogen (N2), or any combination thereof. In some embodiments, the molybdenum material is a reaction product of a third molybdenum precursor and a non-dielectric material. For example, in some embodiments, the molybdenum material includes molybdenum silicide. In some embodiments, molybdenum silicide is a reaction product of a third molybdenum precursor and polysilicon of a non-dielectric material. In some embodiments, the third molybdenum material is not a reaction product.

[0057] The third molybdenum material can include molybdenum metal with high purity. In some embodiments, the molybdenum metal has a purity of at least 90%, at least 91%, at least 92%, at least 93%, at least 94%, at least 95%, at least 96%, at least 97%, at least 98%, at least 99%, at least 99.9%, at least 99.99%, at least 99.999%, or at least 99.9999%. In some embodiments, the molybdenum metal has a purity of 90% to 100%.

[0058] The third condition may include at least one of a third temperature, a third pressure, a third flow rate, or any combination thereof. The third temperature may be a temperature in the range of 100°C to 600°C or any range or sub-range therebetween. In some embodiments, the third temperature is a temperature in the range of 100°C to 580°C, 100°C to 560°C, 100°C to 540°C, 100°C to 520°C, 100°C to 500°C, 100°C to 480°C, 100°C to 460°C, 100°C to 440°C, 100°C to 420°C, 100°C to 400°C, 100°C to 380°C, 100°C to 360°C, 100°C to 340°C, 100°C to 320°C, 100°C to 300°C, 100°C to 280°C, 100°C to 260°C, 100°C to 240°C, 100°C to 220°C, 100°C to 200°C, 100°C to 180°C, 100°C to 160°C, 100°C to 140°C, or 100°C to 120°C. In some embodiments, the third temperature is a temperature in the range of 120°C to 600°C, 140°C to 600°C, 160°C to 600°C, 180°C to 600°C, 200°C to 600°C, 220°C to 600°C, 240°C to 600°C, 260°C to 600°C, 280°C to 600°C, 300°C to 600°C, 320°C to 600°C, 340°C to 600°C, 360°C to 600°C, 380°C to 600°C, 400°C to 600°C, 420°C to 600°C, 440°C to 600°C, 460°C to 600°C, 480°C to 600°C, 500°C to 600°C, 520°C to 600°C, 540°C to 600°C, 560°C to 600°C, or 580°C to 600°C.

[0059] In some embodiments, the third temperature is a temperature of 400°C or less. In some embodiments, the third temperature is a temperature in the range of 100°C to 400°C, 100°C to 380°C, 100°C to 360°C, 100°C to 340°C, 100°C to 320°C, 100°C to 300°C, 100°C to 280°C, 100°C to 260°C, 100°C to 240°C, 100°C to 220°C, 100°C to 200°C, 100°C to 180°C, 100°C to 160°C, 100°C to 140°C, or 100°C to 120°C. In some embodiments, the third temperature is a temperature in the range of 120°C to 400°C, 140°C to 400°C, 160°C to 400°C, 180°C to 400°C, 200°C to 400°C, 220°C to 400°C, 240°C to 400°C, 260°C to 400°C, 280°C to 400°C, 300°C to 400°C, 320°C to 400°C, 340°C to 400°C, 360°C to 400°C, or 380°C to 400°C.

[0060] In some embodiments, the third temperature is a temperature greater than 400 °C. In some embodiments, the third temperature is a temperature from 400 °C to 600 °C, from 400 °C to 580 °C, from 400 °C to 560 °C, from 400 °C to 540 °C, from 400 °C to 520 °C, from 400 °C to 500 °C, from 400 °C to 480 °C, from 400 °C to 460 °C, from 400 °C to 440 °C, or from 400 °C to 420 °C. In some embodiments, the third temperature is a temperature from 420 °C to 600 °C, from 440 °C to 600 °C, from 460 °C to 600 °C, from 480 °C to 600 °C, from 500 °C to 600 °C, from 520 °C to 600 °C, from 540 °C to 600 °C, from 560 °C to 600 °C, or from 580 °C to 600 °C.

[0061] In some embodiments, the third temperature is greater than the first temperature. In some embodiments, the third temperature is greater than the second temperature. In some embodiments, the third temperature is less than the first temperature. In some embodiments, the third temperature is less than the second temperature.

[0062] The third pressure may include a pressure from 1 Torr to 100 Torr or any range or sub-range therebetween. In some embodiments, the third pressure is a pressure from 1 Torr to 90 Torr, from 1 Torr to 80 Torr, from 1 Torr to 70 Torr, from 1 Torr to 60 Torr, from 1 Torr to 50 Torr, from 1 Torr to 40 Torr, from 1 Torr to 30 Torr, from 1 Torr to 20 Torr, from 1 Torr to 10 Torr, or from 1 Torr to 5 Torr. In some embodiments, the third pressure is a pressure from 5 Torr to 100 Torr, from 10 Torr to 100 Torr, from 20 Torr to 100 Torr, from 30 Torr to 100 Torr, from 40 Torr to 100 Torr, from 50 Torr to 100 Torr, from 60 Torr to 100 Torr, from 70 Torr to 100 Torr, from 80 Torr to 100 Torr, or from 90 Torr to 100 Torr.

[0063] In some embodiments, the third pressure is greater than the first pressure. In some embodiments, the third pressure is less than the first pressure. In some embodiments, the third pressure is greater than the second pressure. In some embodiments, the third pressure is less than the second pressure.

[0064] The third flow rate may include a flow rate in the range of 0.01 sccm to 10 sccm or any range or sub-range therebetween. In some embodiments, the third flow rate is a flow rate of 0.1 sccm to 1 sccm, 0.1 sccm to 10 sccm, 0.2 sccm to 10 sccm, 0.3 sccm to 10 sccm, 0.4 sccm to 10 sccm, 0.5 sccm to 10 sccm, 0.6 sccm to 10 sccm, 0.7 sccm to 10 sccm, 0.8 sccm to 10 sccm, 0.9 sccm to 10 sccm, 1 sccm to 10 sccm, 2 sccm to 10 sccm, sccm to 10 sccm, 3 sccm to 10 sccm, 4 sccm to 10 sccm, 5 sccm to 10 sccm, 6 sccm to 10 sccm, 7 sccm to 10 sccm, 8 sccm to 10 sccm, or 9 sccm to 10 sccm. In some embodiments, the third flow rate is a flow rate of 0.01 sccm to 9 sccm, 0.01 sccm to 8 sccm, 0.01 sccm to 7 sccm, 0.01 sccm to 6 sccm, 0.01 sccm to 5 sccm, 0.01 sccm to 4 sccm, 0.01 sccm to 3 sccm, 0.01 sccm to 2 sccm, 0.01 sccm to 1 sccm, 0.01 sccm to 0.9 sccm, 0.01 sccm to 0.8 sccm, 0.01 sccm to 0.7 sccm, 0.01 sccm to 0.6 sccm, 0.01 sccm to 0.5 sccm, 0.01 sccm to 0.4 sccm, 0.01 sccm to 0.3 sccm, 0.01 sccm to 0.2 sccm, or 0.01 sccm to 0.1 sccm.

[0065] In some embodiments, the third flow rate is greater than the first flow rate. In some embodiments, the third flow rate is less than the first flow rate. In some embodiments, the third flow rate is greater than the second flow rate. In some embodiments, the third flow rate is less than the second flow rate.

[0066] At step 110, in some embodiments, method 100 includes contacting a structure with a co-reactant precursor. In some embodiments, the co-reactant precursor is contacted with the structure under a first condition. In some embodiments, the co-reactant precursor is contacted with a non-dielectric material in a co-flow manner with a first molybdenum precursor. In some embodiments, the co-reactant precursor is contacted with the structure under a second condition. In some embodiments, the co-reactant precursor is contacted with a non-dielectric material in a co-flow manner with a second molybdenum precursor. In some embodiments, the co-reactant precursor is contacted with the structure under a third condition. In some embodiments, the co-reactant precursor is contacted with a non-dielectric material in a co-flow manner with a third molybdenum precursor. In some embodiments, the co-reactant includes hydrogen (H2). In some embodiments, the co-reactant includes at least one of argon (Ar), helium (He), nitrogen (N2), or any combination thereof.

[0067] The flow rate of the co-reactant precursor can include a flow rate in the range of 50 sccm to 1000 sccm or any range or sub-range therebetween. In some embodiments, the flow rate of the co-reactant precursor includes a flow rate of 50 sccm to 950 sccm, 50 sccm to 900 sccm, 50 sccm to 850 sccm, 50 sccm to 800 sccm, 50 sccm to 750 sccm, 50 sccm to 700 sccm, 50 sccm to 650 sccm, 50 sccm to 600 sccm, 50 sccm to 550 sccm, 50 sccm to 500 sccm, 50 sccm to 450 sccm, 50 sccm to 400 sccm, 50 sccm to 350 sccm, 50 sccm to 300 sccm, 50 sccm to 250 sccm, 50 sccm to 200 sccm, 50 sccm to 150 sccm, or 50 sccm to 100 sccm. In some embodiments, the flow rate of the co-reactant precursor includes a flow rate of 100 sccm to 1000 sccm, 150 sccm to 1000 sccm, 200 sccm to 1000 sccm, 250 sccm to 1000 sccm, 300 sccm to 1000 sccm, 350 sccm to 1000 sccm, 400 sccm to 1000 sccm, 450 sccm to 1000 sccm, 500 sccm to 1000 sccm, 550 sccm to 1000 sccm, 600 sccm to 1000 sccm, 650 sccm to 1000 sccm, 700 sccm to 1000 sccm, 750 sccm to 1000 sccm, 800 sccm to 1000 sccm, 850 sccm to 1000 sccm, 900 sccm to 1000 sccm, or 950 sccm to 1000 sccm.

[0068] Figure 2 is a schematic diagram of an apparatus 200 according to some embodiments. As Figure 2 shown, the apparatus 200 includes transistors configured in a nanosheet configuration. In some embodiments, the apparatus 200 includes a source 202 and a drain 204. In some embodiments, the apparatus 200 includes a gate 206. In some embodiments, the source 202 includes a non-dielectric material, the non-dielectric material including polysilicon. In some embodiments, the source 202 includes a non-dielectric material, the non-dielectric material including silicon. In some embodiments, the drain 204 includes a non-dielectric material, the non-dielectric material including polysilicon. In some embodiments, the drain 204 includes a non-dielectric material, the non-dielectric material including silicon. In some embodiments, the gate 206 includes a dielectric material. In some embodiments, any one or more of the methods disclosed herein can be employed to obtain a molybdenum material on at least one of the source 202, the drain 204, or any combination thereof. It will be appreciated that, without departing from the scope of the present disclosure, the methods disclosed herein can be applied to other devices including other transistors (such as, and not limited to, planar transistors, field effect transistors, nanowire transistors, etc.).

[0069] Figure 11 is a drawing of a substrate after selective deposition of a molybdenum precursor when applying the deposition methods described herein. After depositing the substrate using the molybdenum precursor and the methods described herein, the ratio between the deposited regions and the non-deposited regions can be described based on the regions deposited on the substrate. For example (and not limited to), each deposited region or pre-cleaned region deposited using the molybdenum precursor is greater than 1.3x 10 16 at / cm 2 , while on the substrate it is less than 6x 10 14 at / cm 2 on the non-deposited regions or the regions received as-received. In other embodiments, the deposited region can be 1.3x10 17 at / cm 2 , while on the substrate it is less than 6x 10 14 at / cm 2 on the non-deposited regions. In other embodiments, the deposited region can be 1.3x 10 17 at / cm 2 , while on the substrate it is less than 6x 10 13 at / cm 2 . In other embodiments, the deposited region can be 1.3x 10 16 at / cm 2 , while on the substrate it is less than 6x 10 13 at / cm2 The ratio from the deposited area to the non-deposited area may vary based on the substrate and other factors considered herein.

[0070] Example 1

[0071] Selective deposition of molybdenum on silicon

[0072] MoCl5 is used to selectively deposit molybdenum on polysilicon. Before depositing molybdenum on polysilicon, DHF is used to pre-etch the polysilicon. Figure 3 is a graphical view of the relationship between the molybdenum thickness measured by X-ray fluorescence (XRF) and the deposition time according to some embodiments. The deposition is carried out at 350 °C and 30 Torr pressure with a flow rate of 500 sccm of H2 co-reactant and a flow rate of 0.02 sccm of MoCl5. The deposition rate of molybdenum on the DHF pre-etched polysilicon substrate is about No deposition of molybdenum is detected on as-received (with native oxide) polysilicon and a Mo thickness of 160 Å is on the pre-etched polysilicon region.

[0073] Example 2

[0074] Selective deposition of molybdenum silicide on silicon

[0075] MoCl5 is used to selectively deposit molybdenum silicide (MoSix) on DHF pre-etched polysilicon. Figure 4 is a graphical view of the relationship between the molybdenum thickness measured by X-ray fluorescence (XRF) and the deposition time according to some embodiments. The deposition is carried out at 350 °C and 30 Torr pressure with a flow rate of 500 sccm of H2 co-reactant and a flow rate of 0.9 sccm of MoCl5. The MoSix thickness on the DHF pre-cleaned polysilicon substrate is limited to about No deposition of molybdenum is detected on as-received (with native oxide) polysilicon until a deposition time of about 800 seconds.

[0076] Example 3

[0077] Deposition of molybdenum silicide on silicon (without molybdenum metal deposition)

[0078] Figure 5 is a cross-sectional SEM micrograph of a polysilicon sample coated with MoSix according to some embodiments. The depicted polysilicon sample coated with MoSix is continuously deposited for 800 seconds at 350 °C and 30 Torr pressure with a flow rate of 500 sccm of H2 co-reactant and a flow rate of 0.9 sccm of MoCl5, as Figure 4 shown. The coating thickness is about and the polysilicon substrate thickness decreases from to about Due to XRF at Only about was detected on the thick deposited film Therefore, the coating is presumably MoSix produced by the reaction between molybdenum and the polysilicon substrate. Figure 6 is according to some embodiments Graphical view of the SIMS depth profile of the thick coating. The interdiffusion of molybdenum and silicon confirms the formation of MoSix.

[0079] Example 4

[0080] Deposit molybdenum metal and etch metal oxide

[0081] Figure 7 is a graphical view of the relationship between the molybdenum film thickness measured by X-ray fluorescence (XRF) and the deposition time according to some embodiments. Deposition is performed on a PVD molybdenum substrate at different temperatures (i.e., 350 °C, 450 °C, and 500 °C) and a pressure of 10 Torr with a flow rate of 500 sccm H2 co-reactant and a flow rate of 0.02 sccm MoCl5. At 450 °C, within the first 10 minutes before depositing molybdenum, the MoCl5 / H2 CVD process etches the molybdenum oxide on the surface. For about Etching of molybdenum occurs at 350 °C and a pressure of 10 Torr and lasts for 20 minutes. Figure 8 is a graphical view of the relationship between the molybdenum thickness measured by XRF and the deposition time according to some embodiments. Deposition is performed at a flow rate of 500 sccm H2 co-reactant and a flow rate of 0.02 sccm MoCl5 at 350 °C and a pressure of 30 Torr. Increasing the deposition pressure to 30 Torr allows molybdenum to be deposited at 350 °C within 10 minutes.

[0082] Example 5

[0083] Deposit MoSix on silicon and then Mo

[0084] Figure 9 is a cross-sectional SEM micrograph of a polysilicon sample coated with Mo / MoSix according to some embodiments. The Mo / MoSix-coated polysilicon sample is continuously deposited for 800 seconds at a flow rate of 500 sccm H2 co-reactant and a flow rate of 0.32 sccm MoCl5 at 350 °C and a pressure of 8 Torr. On the polysilicon substrate, about 52 nm of Mo is deposited on top of 15 nm MoSix in a single deposition step. Figure 10 is a graphical view of the SIMS depth profile of the polysilicon sample coated with Mo / MoSix according to some embodiments. The interdiffusion of Mo and Si confirms the formation of MoSix between Mo and the polysilicon substrate. Table 1 lists the conditions (MoCl5 flow rate and chamber pressure) that allow the formation of Mo / MoSix on polysilicon.

[0085] Table 1: Conditions

[0086]

[0087] Aspect

[0088] Various aspects are described below. It should be understood that any one or more of the features stated in the following aspects can be combined with any one or more other aspects.

[0089] Aspect 1. A method, comprising:

[0090] obtaining a structure,

[0091] wherein the structure comprises:

[0092] a non-dielectric material; and

[0093] a dielectric material;

[0094] contacting the structure with a molybdenum precursor under certain conditions to obtain a molybdenum material on at least a portion of the structure,

[0095] wherein the molybdenum material is not deposited on the dielectric material under the conditions.

[0096] Aspect 2. The method according to Aspect 1, wherein the non-dielectric material comprises a semiconductor material.

[0097] Aspect 3. The method according to any one of Aspects 1 to 2, wherein the non-dielectric material comprises a conductive material.

[0098] Aspect 4. The method according to any one of Aspects 1 to 3, wherein the molybdenum precursor comprises MoCl5.

[0099] Aspect 5. The method according to any one of Aspects 1 to 4, wherein:

[0100] the non-dielectric material comprises silicon;

[0101] the molybdenum material comprises molybdenum metal.

[0102] Aspect 6. The method according to any one of Aspects 1 to 5, wherein:

[0103] the non-dielectric material comprises silicon; and

[0104] the molybdenum material comprises molybdenum silicide.

[0105] Aspect 7. The method according to any one of Aspects 1 to 6, wherein:

[0106] the non-dielectric material comprises polysilicon; and

[0107] The molybdenum material includes molybdenum silicide.

[0108] Aspect 8. The method according to any one of aspects 1 to 7, wherein the conditions include a first temperature of 400 °C or less than 400 °C.

[0109] Aspect 9. The method according to any one of aspects 1 to 8, wherein the conditions include a first flow rate of 0.01 sccm to 10 sccm of the molybdenum precursor.

[0110] Aspect 10. The method according to any one of aspects 1 to 9, wherein the conditions include a first pressure of 1 Torr to 100 Torr.

[0111] Aspect 11. The method according to any one of aspects 1 to 10, further comprising:

[0112] Contacting the structure with a first co-reactant precursor under the conditions.

[0113] Aspect 12. The method according to any one of aspects 1 to 11, further comprising:

[0114] Contacting the structure with the molybdenum precursor under a second condition to obtain a second molybdenum material on at least a portion of the molybdenum material.

[0115] Aspect 13. The method according to aspect 12, wherein contacting the structure with the molybdenum precursor under the second condition removes a metal oxide from the molybdenum material and deposits the second molybdenum material on at least a portion of the non-dielectric material.

[0116] Aspect 14. The method according to any one of aspects 12 to 13, wherein:

[0117] The non-dielectric material includes silicon;

[0118] The molybdenum material includes molybdenum silicide; and

[0119] The second molybdenum material includes molybdenum metal.

[0120] Aspect 15. The method according to any one of aspects 12 to 14, wherein:

[0121] The non-dielectric material includes polysilicon;

[0122] The molybdenum material includes molybdenum silicide; and

[0123] The second molybdenum material includes molybdenum metal.

[0124] Aspect 16. The method according to any one of aspects 12 to 15, wherein the second molybdenum material is not deposited on the dielectric material under the second condition.

[0125] Aspect 17. The method according to any one of aspects 12 to 16, wherein the second condition includes a second temperature of 400 °C or less than 400 °C.

[0126] Aspect 18. The method according to any one of aspects 12 to 17, wherein the second condition includes a second flow rate of 0.01 sccm to 10 sccm of the molybdenum precursor.

[0127] Aspect 19. The method according to any one of aspects 12 to 18, wherein the second condition includes a second pressure of 1 Torr to 100 Torr.

[0128] Aspect 20. The method according to any one of aspects 12 to 19, further comprising contacting the structure with a second co-reactant precursor under the second condition.

[0129] Aspect 21. A method, comprising:

[0130] obtaining a structure,

[0131] wherein the structure includes:

[0132] polycrystalline silicon; and

[0133] a dielectric material;

[0134] contacting the structure with a molybdenum precursor under a first condition to obtain molybdenum silicide on the polycrystalline silicon, and contacting the structure with the molybdenum precursor under a second condition to obtain molybdenum metal on the molybdenum silicide.

[0135] Aspect 22. The method according to any one of aspect 21, wherein no molybdenum silicide is obtained on the dielectric material under the first condition.

[0136] Aspect 23. The method according to any one of aspects 21 to 22, wherein no molybdenum metal is obtained on the dielectric material under the first condition.

[0137] Aspect 24. The method according to any one of aspects 21 to 23, wherein the first condition includes a first temperature of 400 °C or less than 400 °C.

[0138] Aspect 25. The method according to any one of aspects 21 to 24, wherein the first condition includes a first flow rate of 0.01 sccm to 10 sccm of the molybdenum precursor.

[0139] Aspect 26. The method according to any one of aspects 21 to 25, wherein the first condition includes a first pressure of 1 Torr to 100 Torr.

[0140] Aspect 27. The method according to any one of aspects 21 to 26, further comprising contacting the structure with a first co-reactant precursor under the first condition.

[0141] Aspect 28. The method according to any one of aspects 21 to 27, wherein no molybdenum silicide is obtained on the dielectric material under the second condition.

[0142] Aspect 29. The method according to any one of aspects 21 to 28, wherein no molybdenum metal is obtained on the dielectric material under the second condition.

[0143] Aspect 30. The method according to any one of aspects 21 to 29, wherein the second condition includes a second temperature of 400 °C or less than 400 °C.

[0144] Aspect 31. The method according to any one of aspects 21 to 30, wherein the second condition includes a second flow rate of the molybdenum precursor from 0.01 sccm to 10 sccm.

[0145] Aspect 32. The method according to any one of aspects 21 to 31, wherein the second condition includes a second pressure from 1 Torr to 100 Torr.

[0146] Aspect 33. The method according to any one of aspects 21 to 32, further comprising contacting the structure with a second co-reactant precursor under the second condition.

[0147] Aspect 34. The method according to any one of aspects 21 to 33, further comprising contacting the structure with the molybdenum precursor under a third condition to remove metal oxides on the molybdenum silicide, the molybdenum metal or the polysilicon.

[0148] Aspect 35. The method according to aspect 34, wherein no molybdenum silicide is obtained on the dielectric material under the third condition.

[0149] Aspect 36. The method according to any one of aspects 34 to 35, wherein no molybdenum metal is obtained on the dielectric material under the third condition.

[0150] Aspect 37. The method according to any one of aspects 34 to 36, wherein the third condition includes a third temperature of 400 °C or less than 400 °C.

[0151] Aspect 38. The method according to any one of aspects 34 to 37, wherein the third condition includes a third flow rate of the molybdenum precursor from 0.01 sccm to 10 sccm.

[0152] Aspect 39. The method according to any one of aspects 34 to 38, wherein the third condition includes a third pressure of 1 torr to 100 torr.

[0153] Aspect 40. The method according to any one of aspects 21 to 39, wherein the first condition is the same as the second condition, such that in a single step, molybdenum silicide is obtained on the polysilicon and molybdenum metal is obtained on the molybdenum silicide.

[0154] Aspect 41. A method, comprising:

[0155] Obtaining a structure,

[0156] wherein the structure includes:

[0157] A conductive material; and

[0158] A dielectric material;

[0159] Contacting the structure with a molybdenum precursor under a first condition,

[0160] wherein under the first condition, the molybdenum precursor removes molybdenum oxide from at least a portion of the conductive material,

[0161] Contacting the structure with the molybdenum precursor under a second condition,

[0162] wherein under the second condition, the molybdenum precursor deposits molybdenum metal on at least a portion of the conductive material.

[0163] Aspect 42. The method according to aspect 41, wherein no molybdenum metal is obtained on the dielectric material under the conditions.

[0164] Aspect 43. The method according to any one of aspects 41 to 42, wherein the first condition includes a temperature of 400 °C or less than 400 °C; wherein the second condition includes a temperature of 400 °C or less than 400 °C.

[0165] Aspect 44. The method according to any one of aspects 41 to 43, wherein the first condition includes a flow rate of 0.01 sccm to 1 sccm of the molybdenum precursor; wherein the second condition includes a flow rate of 0.1 sccm to 1 sccm of the molybdenum precursor.

[0166] Aspect 45. The method according to any one of aspects 41 to 44, wherein the first condition includes a first pressure, wherein the second condition includes a second pressure; wherein the second pressure is greater than the first pressure.

[0167] Aspect 46. The method according to aspect 45, wherein the first pressure is a pressure of 1 torr to 100 torr.

[0168] Aspect 47. The method according to aspect 46, wherein the second pressure is a pressure of 1 Torr to 100 Torr.

[0169] Aspect 48. The method according to any one of aspects 41 to 47, wherein the conductive material comprises molybdenum silicide.

[0170] Aspect 49. The method according to any one of aspects 41 to 48, wherein the conductive material comprises a metal.

[0171] Aspect 50. The method according to any one of aspects 41 to 49, wherein the conductive material comprises a metal nitride.

[0172] It should be understood that, without departing from the scope of the present disclosure, detailed changes may be made especially in the construction materials employed and in the shape, size, and arrangement of the components. The description of this specification and the examples are examples, and the actual scope and spirit of the present disclosure are indicated by the appended claims.

Claims

1. A method, comprising: obtaining a structure, wherein the structure comprises: a non - dielectric material; and a dielectric material; contacting the structure with a molybdenum precursor under certain conditions to obtain molybdenum material on at least a portion of the structure, wherein under the conditions, the molybdenum material is not deposited on the dielectric material.

2. The method according to claim 1, wherein the molybdenum precursor comprises MoCl5.

3. The method according to claim 1, wherein: the non - dielectric material comprises silicon; the molybdenum material comprises molybdenum metal.

4. The method according to claim 1, wherein: the non - dielectric material comprises silicon; and the molybdenum material comprises molybdenum silicide.

5. The method according to claim 1, wherein: the non - dielectric material comprises polysilicon; and the molybdenum material comprises molybdenum silicide.

6. The method according to claim 1, wherein the conditions comprise a first temperature of 400 °C or less than 400 °C.

7. The method according to claim 1, wherein the conditions comprise a first flow rate of the molybdenum precursor from 0.01 sccm to 10 sccm.

8. The method according to claim 1, wherein the conditions comprise a first pressure from 1 torr to 100 torr.

9. The method according to claim 1, further comprising contacting the structure with a first co - reactant precursor under the conditions.

10. The method according to claim 1, further comprising: contacting the structure with the molybdenum precursor under a second condition to obtain a second molybdenum material on at least a portion of the molybdenum material.

11. The method according to claim 12, wherein contacting the structure with the molybdenum precursor under the second condition removes a metal oxide from the molybdenum material and deposits the second molybdenum material on at least a portion of the non - dielectric material.

12. A method, comprising: obtaining a structure, wherein the structure comprises: polysilicon; and a dielectric material; contacting the structure with a molybdenum precursor under a first condition to obtain molybdenum silicide on the polysilicon, contacting the structure with the molybdenum precursor under a second condition to obtain molybdenum metal on the molybdenum silicide.

13. The method according to claim 14, wherein the molybdenum silicide is not obtained on the dielectric material under the first condition.

14. The method according to claim 14, wherein the molybdenum metal is not obtained on the dielectric material under the first condition.

15. The method according to claim 14, wherein the first condition comprises a first temperature of 400 °C or less than 400 °C.

16. The method according to claim 14, wherein the first condition comprises a first flow rate of the molybdenum precursor from 0.01 sccm to 10 sccm.

17. The method according to claim 14, wherein the first condition comprises a first pressure from 1 torr to 100 torr.

18. A substrate, comprising, wherein the structure comprises: a non - dielectric material; and a dielectric material; contacting the structure with a molybdenum precursor under certain conditions to obtain molybdenum material on at least a portion of the structure; wherein the molybdenum precursor is selectively deposited on the substrate such that there is a deposited portion having a coverage greater than 1.3×10 16 at / cm 2 and an undeposited portion having a coverage less than 6×10 14 at / cm 2 .

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